[go: up one dir, main page]

SE8901670L - Elektromagnetiska vadgor - Google Patents

Elektromagnetiska vadgor

Info

Publication number
SE8901670L
SE8901670L SE8901670A SE8901670A SE8901670L SE 8901670 L SE8901670 L SE 8901670L SE 8901670 A SE8901670 A SE 8901670A SE 8901670 A SE8901670 A SE 8901670A SE 8901670 L SE8901670 L SE 8901670L
Authority
SE
Sweden
Prior art keywords
wells
wades
electromagnetic
wave
pump
Prior art date
Application number
SE8901670A
Other languages
English (en)
Swedish (sv)
Other versions
SE8901670D0 (sv
Inventor
N Vodjdani
Original Assignee
Thomson Csf
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Csf filed Critical Thomson Csf
Publication of SE8901670D0 publication Critical patent/SE8901670D0/xx
Publication of SE8901670L publication Critical patent/SE8901670L/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01716—Optically controlled superlattice or quantum well devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)
SE8901670A 1988-05-11 1989-05-10 Elektromagnetiska vadgor SE8901670L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8806346A FR2637092B1 (fr) 1988-05-11 1988-05-11 Modulateur d'onde electromagnetique a puits quantiques couples, et application a un detecteur d'onde electromagnetique

Publications (2)

Publication Number Publication Date
SE8901670D0 SE8901670D0 (sv) 1989-05-10
SE8901670L true SE8901670L (sv) 1990-05-21

Family

ID=9366215

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8901670A SE8901670L (sv) 1988-05-11 1989-05-10 Elektromagnetiska vadgor

Country Status (8)

Country Link
US (1) US5311221A (xx)
CA (1) CA1314615C (xx)
DE (1) DE3915429A1 (xx)
FR (1) FR2637092B1 (xx)
GB (1) GB2227571B (xx)
IT (1) IT1235751B (xx)
NL (1) NL8901141A (xx)
SE (1) SE8901670L (xx)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2662855A1 (fr) * 1990-06-05 1991-12-06 Thomson Csf Detecteur d'onde electromagnetique.
GB2248117A (en) * 1990-09-24 1992-03-25 Philips Electronic Associated An optical device
DE69115205T2 (de) * 1990-09-24 1996-06-27 Philips Electronics Nv Optisch schaltbare Vorrichtung.
JPH04163967A (ja) * 1990-10-27 1992-06-09 Canon Inc 光デバイス
FR2675949B1 (fr) * 1991-04-25 1993-07-09 Thomson Csf Modulateur d'ondes et detecteur optique a puits quantiques.
EP0532204A1 (en) * 1991-09-05 1993-03-17 AT&T Corp. Article comprising an electro-optic quantum well device
FR2682477B1 (fr) * 1991-10-11 1994-04-15 Thomson Csf Spectrometre.
GB2307304B (en) * 1995-11-16 2000-04-05 Toshiba Cambridge Res Center Optical device
JPH10144950A (ja) * 1996-11-15 1998-05-29 Furukawa Electric Co Ltd:The 半導体受光デバイス
FR2757684B1 (fr) * 1996-12-20 1999-03-26 Thomson Csf Detecteur infrarouge a structure quantique, non refroidie
FR2758669B1 (fr) * 1997-01-23 1999-02-19 Alsthom Cge Alcatel Procede de modulation et modulateur optique a semi conducteur
FR2761537B1 (fr) 1997-04-01 1999-06-11 Thomson Csf Laser comprenant un empilement de diodes laser epitaxiees compris entre deux miroirs de bragg
US6374003B1 (en) * 1997-12-19 2002-04-16 Intel Corporation Method and apparatus for optically modulating light through the back side of an integrated circuit die using a plurality of optical beams
FR2784185B1 (fr) 1998-10-06 2001-02-02 Thomson Csf Dispositif pour l'harmonisation entre une voie d'emission laser et une voie passive d'observation
JP2014085501A (ja) * 2012-10-23 2014-05-12 Mitsubishi Electric Corp 半導体光変調器
JP6776888B2 (ja) * 2016-12-26 2020-10-28 住友電気工業株式会社 光スイッチ及び光スイッチ装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525687A (en) * 1983-02-28 1985-06-25 At&T Bell Laboratories High speed light modulator using multiple quantum well structures
JP2583480B2 (ja) * 1983-12-23 1997-02-19 株式会社日立製作所 光スイッチ及び光スイッチアレイ
JPS62502218A (ja) * 1985-03-18 1987-08-27 アメリカン テレフオン アンド テレグラフ カムパニ− 非線形・双安定光学装置
US4727341A (en) * 1985-06-28 1988-02-23 Nec Corporation Optical modulator
US4705361A (en) * 1985-11-27 1987-11-10 Texas Instruments Incorporated Spatial light modulator
US4861130A (en) * 1986-10-29 1989-08-29 Hitachi, Ltd. Optical modulating device utilizing polariton substance
GB8711304D0 (en) * 1987-05-13 1987-06-17 Secr Defence Electro-optic device
FR2619936B1 (fr) * 1987-09-01 1989-12-01 Thomson Csf Modulateur pour onde electromagnetique, a puits quantiques, et utilisation de ce modulateur comme polariseur
US5047822A (en) * 1988-03-24 1991-09-10 Martin Marietta Corporation Electro-optic quantum well device

Also Published As

Publication number Publication date
FR2637092A1 (fr) 1990-03-30
SE8901670D0 (sv) 1989-05-10
FR2637092B1 (fr) 1991-04-12
IT1235751B (it) 1992-09-24
US5311221A (en) 1994-05-10
GB2227571A (en) 1990-08-01
NL8901141A (nl) 1990-04-02
CA1314615C (fr) 1993-03-16
GB2227571B (en) 1992-11-18
GB8910492D0 (en) 1990-04-25
IT8967322A0 (it) 1989-05-04
DE3915429A1 (de) 1990-07-05

Similar Documents

Publication Publication Date Title
SE8901670L (sv) Elektromagnetiska vadgor
EP0252756A3 (en) Semiconductor device comprising an organic material
DE68923894D1 (de) Halbleitersubstrat mit dielektrischer Isolierung.
DE3585364D1 (de) Halbleitervorrichtungen mit hoher durchbruchspannung.
FR2607200B1 (fr) Dispositif actionneur hydraulique rotatif a palette, destine notamment a l'entrainement d'une gouverne d'aeronef
ES8700801A1 (es) Un aparato para derivar electricamente,de forma condiciona- da,un segmento generador de potencia de una disposicion fo- tovoltaica
DE3765371D1 (de) Phasenkonjugierter laser mit hohem wirkungsgrad.
NO985581L (no) Transformator/reaktor
DE3585309D1 (de) "chip-on-chip" halbleitergeraet.
ES514202A0 (es) "una instalacion generadora de potencia electrica".
HUT49754A (en) Complementary, in layer insulated gating rectifier
NO20002731L (no) Elektrisk strømforsyningssystem
DE3781474D1 (de) Magnetfelderzeuger.
DE3788768D1 (de) Halbleiterlaser mit Dotierung von seltenen Erden.
DE3581045D1 (de) "latch-up"-freie komplementaere halbleiteranordnung mit hoher schaltgeschwindigkeit.
DE3882801D1 (de) Halbleiterfeldeffekttransistor mit einer gitterisolierungsschicht aus monokristallinem siliziumcarbid.
DE3785699D1 (de) Halbleiteranordnung mit zwei durch eine isolationsschicht getrennten elektroden.
EP0385524A3 (en) Monolithic integrated structure for a two-stage driving system with level translator circuit component of the driving signal for power transistors
DE3787797D1 (de) Halbleiter phasengesteuerte gruppenantenne mit kleinen nebenkeulen.
DE3668716D1 (de) Halbleitersubstratvorspannungsgenerator.
DE3785488D1 (de) Abschaltbares leistungshalbleiterbauelement.
DE3750743D1 (de) Halbleiter-Schaltanordnung mit einer Anodenkurzschlussstruktur.
IT8021905A0 (it) Comando elettromagnetico particolarmente adatto per la manovra a distanza di interruttori elettrici di tipo scatalato, aperto e simili.
DE3582207D1 (de) Leistungssteuerschaltung.
DE59813600D1 (de) Vertikal igbt mit einer soi-struktur

Legal Events

Date Code Title Description
NAV Patent application has lapsed

Ref document number: 8901670-3

Effective date: 19941201

Format of ref document f/p: F