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US3546459A - Single-crystal,drifted semi-conductor radiation detector having a bore therethrough - Google Patents

Single-crystal,drifted semi-conductor radiation detector having a bore therethrough Download PDF

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Publication number
US3546459A
US3546459A US624086A US3546459DA US3546459A US 3546459 A US3546459 A US 3546459A US 624086 A US624086 A US 624086A US 3546459D A US3546459D A US 3546459DA US 3546459 A US3546459 A US 3546459A
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US
United States
Prior art keywords
crystal
drifted
bore
semi
conductor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US624086A
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English (en)
Inventor
Michael J Higatsberger
Harald Hick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oesterreichische Studiengesellschaft fuer Atomenergie GmbH
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Oesterreichische Studiengesellschaft fuer Atomenergie GmbH
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Publication of US3546459A publication Critical patent/US3546459A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H10F30/2925—Li-compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • the present invention relates to a method of producing a semi-conductor detector, in general, and to drifted semiconductor detectors, in particular.
  • a trapezoidshaped single-crystal is produced from the germanium, for instance, with an end face of about 10 cm. and a length of 5 cm. This crystal is equipped with a bore. The shape and size of the bore depends upon different factors.
  • a gold plating or the like is applied and, thus, a first electrode is formed.
  • the face of the bore is covered, for instance, with a lithiumsalt-solution. This cover forms then the second electrode.
  • Non-drifted zones which may occur at the edge of the body, do not play a large role generally. They can be easily and simply polished off, however,
  • FIG. 1 is a perspective front view of a single-crystal, by example, constituting a first embodiment of the present invention
  • FIG. 2 is a perspective front view of a second embodiment of the present invention.
  • FIG. 3 is a top plan view of the crystal disclosed in FIG. 2.
  • the single-crystal 1 has a bore 2 which is completely bored through the single-crystal 1 passing through two substantially opposite end surface portions 1a of the crystal, and a gold plating is applied to the outer later peripheral surface 3 of the trapezoid, which surface 3 substantially surrounds the bore 2, and which gold plating constitutes a first electrode.
  • the inner face of the bore 2 has a cover 4 of for instance, a lithium-salt solution. This cover 4 constitutes then a second electrode.
  • Terminals 5 and 6 are arranged and connected by leads to the cover of the outer later peripheral surface 3 and to the cover 4 of the bore 2, respectively. By applying a voltage between the terminals 5 and 6, the crystal 1 is drifted.
  • the crystal 1' is of cylindrical configuration, and is equipped with a bore 2 passing completely through both end surfaces 1a, which bore has a metallic cover 7, for instance with gold (Au).
  • the outer surface 3' is covered with a layer 8' of lithium, which is preferably applied by vaporizing.
  • the direction of drifting is indicated by the arrow 9, though a drifting in opposite direction is possible.
  • Terminals 5' and 6 are connected by means of leads with the cover 7' of the body 2' and with the layer 8' of the outer surface 3.
  • Si-crystal can also be used instead of a germanium crystal.
  • the substance to be measured is inserted into the bore.
  • One covers thereby a range reaching nearly the entire space angle 411-.
  • a tube can be guided through the bore of the crystal, through which tube a radioactive powder formed, liquid or gaseous medium flows.
  • the present invention includes also the following measure:
  • a bore-drifted semi-conductor in accordance with the present invention is defined as a semi-conductor having a bore completely passing therethrough and through two substantially opposite end surface portions,
  • a method of producing a drifted semi-conductor detector of increased sensitive volume comprising the steps of producing a single-crystal
  • said single-crystal including an outer lateral peripheral surface substantially surrounding said inner bore face, forming said outer lateral peripheral surface as a first electrode
  • said step of boring through said single-crystal is performed by boring in a direction substantially parallel to said longitudinal dimension of said single-crystal.
  • a method measuring radio-activities by means of a semi-conductor detector having a bore increased sensitive volume comprising the steps of passing the material to be measured selectively in gase ous, liquid or powder form and in solid form, respectively, through a bore of a bore-drifted semiconductor detector, said bore-drifted semi-conductor having a bore completely passing through two opposite end surface portions of said semi-conductor and an outer lateral peripheral surface substantially surrounding said bore, said bore defining an inner surface, said semi-conductor being a semi-conductor drifted from one of said surfaces to the other, whereby an appreciable increase of sensitivity and the possibility of measuring weak radio-activities is provided, and
  • a drifted semi-conductor detector of increased sensi tive volume comprising a single-crystal having two substantially opposite end surface portions with a bore extending completely through said single-crystal through said two substantially opposite end surface portions, and
  • said single-crystal being drifted substantially radially relative to said bore.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
US624086A 1966-03-18 1967-03-17 Single-crystal,drifted semi-conductor radiation detector having a bore therethrough Expired - Lifetime US3546459A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT262566A AT261766B (de) 1966-03-18 1966-03-18 Verfahren zum Herstellen eines gedrifteten Halbleiterdetektors

Publications (1)

Publication Number Publication Date
US3546459A true US3546459A (en) 1970-12-08

Family

ID=3537590

Family Applications (1)

Application Number Title Priority Date Filing Date
US624086A Expired - Lifetime US3546459A (en) 1966-03-18 1967-03-17 Single-crystal,drifted semi-conductor radiation detector having a bore therethrough

Country Status (6)

Country Link
US (1) US3546459A (de)
AT (1) AT261766B (de)
CH (1) CH457630A (de)
DE (1) DE1614317A1 (de)
FR (1) FR1514734A (de)
GB (1) GB1115939A (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4056726A (en) * 1975-10-01 1977-11-01 Princeton Gamma-Tech, Inc. Coaxial gamma ray detector and method therefor
US4163240A (en) * 1977-03-21 1979-07-31 The Harshaw Chemical Company Sensitive silicon pin diode fast neutron dosimeter
US4214253A (en) * 1977-06-13 1980-07-22 General Electric Company Radiation detector
WO2014143072A1 (en) * 2013-03-15 2014-09-18 Canberra Industries, Inc. SMALL ANODE GERMANIUM (SAGe) WELL RADIATION DETECTOR SYSTEM AND METHOD
US10048389B1 (en) 2017-04-19 2018-08-14 Mirion Technologies (Canberra), Inc. Centroid contact radiation detector system and method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2118846A1 (en) * 1970-12-22 1972-08-04 Radiotechnique Compelec Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1863843A (en) * 1925-01-07 1932-06-21 Union Switch & Signal Co Process of preparing metal for use in unidirectional current carrying devices
US2945955A (en) * 1955-11-12 1960-07-19 Atomic Energy Authority Uk Apparatus for detecting radioactive particle emission
US3005100A (en) * 1956-06-12 1961-10-17 Theos J Thompson Nuclear scintillation monitor
US3225198A (en) * 1961-05-16 1965-12-21 Hughes Aircraft Co Method of measuring nuclear radiation utilizing a semiconductor crystal having a lithium compensated intrinsic region
US3378414A (en) * 1962-11-02 1968-04-16 Ass Elect Ind Method for producing p-i-n semiconductors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1863843A (en) * 1925-01-07 1932-06-21 Union Switch & Signal Co Process of preparing metal for use in unidirectional current carrying devices
US2945955A (en) * 1955-11-12 1960-07-19 Atomic Energy Authority Uk Apparatus for detecting radioactive particle emission
US3005100A (en) * 1956-06-12 1961-10-17 Theos J Thompson Nuclear scintillation monitor
US3225198A (en) * 1961-05-16 1965-12-21 Hughes Aircraft Co Method of measuring nuclear radiation utilizing a semiconductor crystal having a lithium compensated intrinsic region
US3378414A (en) * 1962-11-02 1968-04-16 Ass Elect Ind Method for producing p-i-n semiconductors

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4056726A (en) * 1975-10-01 1977-11-01 Princeton Gamma-Tech, Inc. Coaxial gamma ray detector and method therefor
US4163240A (en) * 1977-03-21 1979-07-31 The Harshaw Chemical Company Sensitive silicon pin diode fast neutron dosimeter
US4214253A (en) * 1977-06-13 1980-07-22 General Electric Company Radiation detector
WO2014143072A1 (en) * 2013-03-15 2014-09-18 Canberra Industries, Inc. SMALL ANODE GERMANIUM (SAGe) WELL RADIATION DETECTOR SYSTEM AND METHOD
US9269847B2 (en) 2013-03-15 2016-02-23 Canberra Industries, Inc. Small anode germanium (SAGe) well radiation detector system and method
US10048389B1 (en) 2017-04-19 2018-08-14 Mirion Technologies (Canberra), Inc. Centroid contact radiation detector system and method

Also Published As

Publication number Publication date
AT261766B (de) 1968-05-10
FR1514734A (fr) 1968-02-23
CH457630A (de) 1968-06-15
GB1115939A (en) 1968-06-06
DE1614317A1 (de) 1970-07-02

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