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CH457630A - Verfahren zum Herstellen eines Halbleiterdetektors - Google Patents

Verfahren zum Herstellen eines Halbleiterdetektors

Info

Publication number
CH457630A
CH457630A CH382567A CH382567A CH457630A CH 457630 A CH457630 A CH 457630A CH 382567 A CH382567 A CH 382567A CH 382567 A CH382567 A CH 382567A CH 457630 A CH457630 A CH 457630A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor detector
detector
semiconductor
Prior art date
Application number
CH382567A
Other languages
English (en)
Inventor
J Dr Higatsberger Michael
Harald Dipl Ing Hick
Original Assignee
Oesterr Studien Atomenergie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oesterr Studien Atomenergie filed Critical Oesterr Studien Atomenergie
Publication of CH457630A publication Critical patent/CH457630A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H10F30/2925Li-compensated PIN gamma-ray detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
CH382567A 1966-03-18 1967-03-15 Verfahren zum Herstellen eines Halbleiterdetektors CH457630A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT262566A AT261766B (de) 1966-03-18 1966-03-18 Verfahren zum Herstellen eines gedrifteten Halbleiterdetektors

Publications (1)

Publication Number Publication Date
CH457630A true CH457630A (de) 1968-06-15

Family

ID=3537590

Family Applications (1)

Application Number Title Priority Date Filing Date
CH382567A CH457630A (de) 1966-03-18 1967-03-15 Verfahren zum Herstellen eines Halbleiterdetektors

Country Status (6)

Country Link
US (1) US3546459A (de)
AT (1) AT261766B (de)
CH (1) CH457630A (de)
DE (1) DE1614317A1 (de)
FR (1) FR1514734A (de)
GB (1) GB1115939A (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2118846A1 (en) * 1970-12-22 1972-08-04 Radiotechnique Compelec Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material
US4056726A (en) * 1975-10-01 1977-11-01 Princeton Gamma-Tech, Inc. Coaxial gamma ray detector and method therefor
US4163240A (en) * 1977-03-21 1979-07-31 The Harshaw Chemical Company Sensitive silicon pin diode fast neutron dosimeter
US4214253A (en) * 1977-06-13 1980-07-22 General Electric Company Radiation detector
US9269847B2 (en) * 2013-03-15 2016-02-23 Canberra Industries, Inc. Small anode germanium (SAGe) well radiation detector system and method
US10048389B1 (en) 2017-04-19 2018-08-14 Mirion Technologies (Canberra), Inc. Centroid contact radiation detector system and method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1863843A (en) * 1925-01-07 1932-06-21 Union Switch & Signal Co Process of preparing metal for use in unidirectional current carrying devices
US2945955A (en) * 1955-11-12 1960-07-19 Atomic Energy Authority Uk Apparatus for detecting radioactive particle emission
US3005100A (en) * 1956-06-12 1961-10-17 Theos J Thompson Nuclear scintillation monitor
US3225198A (en) * 1961-05-16 1965-12-21 Hughes Aircraft Co Method of measuring nuclear radiation utilizing a semiconductor crystal having a lithium compensated intrinsic region
GB1058753A (en) * 1962-11-02 1967-02-15 Ass Elect Ind Improvements relating to solid state devices

Also Published As

Publication number Publication date
AT261766B (de) 1968-05-10
FR1514734A (fr) 1968-02-23
US3546459A (en) 1970-12-08
GB1115939A (en) 1968-06-06
DE1614317A1 (de) 1970-07-02

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