US2787745A - Counter electrode for dry disk type rectifiers - Google Patents
Counter electrode for dry disk type rectifiers Download PDFInfo
- Publication number
- US2787745A US2787745A US325212A US32521252A US2787745A US 2787745 A US2787745 A US 2787745A US 325212 A US325212 A US 325212A US 32521252 A US32521252 A US 32521252A US 2787745 A US2787745 A US 2787745A
- Authority
- US
- United States
- Prior art keywords
- counter electrode
- selenium
- disk type
- metal
- dry disk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 21
- 229910052711 selenium Inorganic materials 0.000 claims description 21
- 239000011669 selenium Substances 0.000 claims description 21
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 5
- 229910052716 thallium Inorganic materials 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 229910052797 bismuth Inorganic materials 0.000 description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- 229910000925 Cd alloy Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910000634 wood's metal Inorganic materials 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001007 Tl alloy Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/047—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
Definitions
- This invention relates to new and useful improvements in the manufacture of selenium rectifiers, and particularly to the composition and application of counter electrodes.
- selenium rectifiers are built up of layers; a metal base plate, followed by one or more layers including a layer of selenium and a counter electrode.
- the counter electrode may be an alloy of various metals, e. g. cadmium, tin, lead, and bismuth, and it may be sprayed or evaporated on the selenium layer, a thin intermediate layer being preferably interposed between the two.
- the intermediate layer may effect an increase of 25 in the current flow and is customarily selected from the metals belonging to the secondary group of the fourth and fifth groups of the periodic system of elements, e. g. bismuth.
- the intermediate layer retards and may even make impossiblethe customary electric forming process.
- some metal such as thallium, gallium, indium or silver is added to the intermediate layer to aid in the formation of the blocking layer. If 50% of the intermediate layer consists of such additive then forming will proceed satisfactorily, the transfer resistance will be decreased and the current flow increased.
- the alloy or mixture of intermediate layer metal and additive metal may be applied to the selenium by evaporation in a vacuum, insuring the formation of a uniform, thin deposit.
- a mixture or alloy of bismuth and thallium has proved to be very efiective. Since these metals have almost the same melting point they may be deposited in the desired ratio without fractionation.
- the intermediate layer is so chosen that 500 micrograms per square centimeter of metal, but preferably less than 100 micrograms per square centimeter is deposited on the selenium surface.
- a separate evaporator is used for each metal.
- the two evaporators can be close together so that the two steam jets will mix near the evaporators.
- the evaporators or the selenium plates may be moved repeat edly at short intervals and thus vaporize the selenium with both metals.
- the ratio of the two components may be varied by varying the distance of the selenium surface from the two evaporators, by varying the vaporization period, by varying the speed of vaporization or the movement of the selenium surface, etc.
- an additional layer may be applied, e. g. by spraying on it a spray-metal, i. e. an alloy having a low melting point.
- a spray-metal i. e. an alloy having a low melting point.
- bismuth, lead, tin or cadmium, or an alloy of some or all said metals may also be used for this purpose.
- an alloy of tin and cadmium, having a melting point of about 178 C., or Woods metal can also be used to form the counter electrode by spraying it on top of the intermediate layer of bismuth and thallium.
- Such rectifiers could readily be formed and the current flow through them would be 25% higher than through rectifiers equipped with the customary counter electrode.
- a selenium rectifier having a counter electrode, a thin layer intermediate the selenium and the counter electrode consisting of a metal of the secondary group of the fourth and fifth groups of the periodic system of elements, and an additive selected from the group consisting of thallium, indium, and gallium.
- a selenium rectifier having a counter electrode, and a thin layer intermediate the selenium and the counter electrode consisting of bismuth and thallium.
Landscapes
- Electrolytic Production Of Metals (AREA)
- Physical Vapour Deposition (AREA)
- Cell Electrode Carriers And Collectors (AREA)
Description
United States Patent COUNTER ELECTRODE FOR DRY DISK TYPE RECTIFIERS Hermann K. Strosche and Otto J. Klein, Nurnberg, Germany, assignors to International Standard Electric Corporation, New York, N. Y., a corporation of Delaware No Drawing. Application December 10, 1952,
Serial No. 325,212
Claims priority, application Germany December 20, 1951 7 Claims. (Cl. 317-241) This invention relates to new and useful improvements in the manufacture of selenium rectifiers, and particularly to the composition and application of counter electrodes.
As is well known, selenium rectifiers are built up of layers; a metal base plate, followed by one or more layers including a layer of selenium and a counter electrode. The counter electrode may be an alloy of various metals, e. g. cadmium, tin, lead, and bismuth, and it may be sprayed or evaporated on the selenium layer, a thin intermediate layer being preferably interposed between the two. The intermediate layer may effect an increase of 25 in the current flow and is customarily selected from the metals belonging to the secondary group of the fourth and fifth groups of the periodic system of elements, e. g. bismuth. However, the intermediate layer retards and may even make impossiblethe customary electric forming process.
According to the present invention, some metal such as thallium, gallium, indium or silver is added to the intermediate layer to aid in the formation of the blocking layer. If 50% of the intermediate layer consists of such additive then forming will proceed satisfactorily, the transfer resistance will be decreased and the current flow increased.
The alloy or mixture of intermediate layer metal and additive metal may be applied to the selenium by evaporation in a vacuum, insuring the formation of a uniform, thin deposit. A mixture or alloy of bismuth and thallium has proved to be very efiective. Since these metals have almost the same melting point they may be deposited in the desired ratio without fractionation. The intermediate layer is so chosen that 500 micrograms per square centimeter of metal, but preferably less than 100 micrograms per square centimeter is deposited on the selenium surface.
Preferably a separate evaporator is used for each metal. The two evaporators can be close together so that the two steam jets will mix near the evaporators. However, the evaporators or the selenium plates may be moved repeat edly at short intervals and thus vaporize the selenium with both metals. The ratio of the two components may be varied by varying the distance of the selenium surface from the two evaporators, by varying the vaporization period, by varying the speed of vaporization or the movement of the selenium surface, etc.
If the deposited layer is as thin as desired but lacks the required transverse conductivity, an additional layer may be applied, e. g. by spraying on it a spray-metal, i. e. an alloy having a low melting point. However, bismuth, lead, tin or cadmium, or an alloy of some or all said metals may also be used for this purpose.
According to the present invention, an alloy of tin and cadmium, having a melting point of about 178 C., or Woods metal can also be used to form the counter electrode by spraying it on top of the intermediate layer of bismuth and thallium. Such rectifiers could readily be formed and the current flow through them would be 25% higher than through rectifiers equipped with the customary counter electrode.
We claim:
1. A selenium rectifier having a counter electrode, a thin layer intermediate the selenium and the counter electrode consisting of a metal of the secondary group of the fourth and fifth groups of the periodic system of elements, and an additive selected from the group consisting of thallium, indium, and gallium.
2. The selenium rectifier according to claim 1, and in which the intermediate layer is -500 micrograms per square centimeter.
3. The selenium rectifier according to claim 1, and in which the additive constitutes up to 50% of the weight of the intermediate layer.
4. The selenium rectifier according to claim 1, and in which the counter electrode consists of tin and cadmium.
5. A selenium rectifier having a counter electrode, and a thin layer intermediate the selenium and the counter electrode consisting of bismuth and thallium.
6. The selenium rectifier according to claim 5, and in which the counter electrode is an alloy of tin and cadmium having a melting point of about 178 C.
7. The selenium rectifier according to claim 1, and in which the counter electrode consists of Woods metal.
References Cited in the file of this patent UNITED STATES PATENTS 2,279,746 Thompson et al. Apr. 14, 1942 2,496,432 Blackburn Feb. 7, 1950 2,510,322 Shearer June 6, 1950 2,602,763 Scaff et al. July 8, 1952 2,603,693 Kircher July 15, 1952 2,718,688 Waldkotter Sept. 27, 1955 FOREIGN PATENTS I 551,698 Great Britain Mar. 5, 1943 576,671 Great Britain Apr. 15, 1946
Claims (1)
1. A SELENIUM RECTIFIER HAVING A COUNTER ELECTRODE, A THIN LAYER INTERMEDIATE THE SELENIUM AND THE COUNTER ELECTRODE CONSISTING OF A METAL OF THE SECONDARY GROUP OF THE FOURTH AND FIFTH GROUPS OF THE PERIODIC SYSTEM OF ELEMENTS, AND AN ADDITIVE SELECTED FROM THE GROUP CONSISTING OF THALLIUM, INDIUM, AND GALLIUM.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES26432A DE975845C (en) | 1951-12-20 | 1951-12-20 | Process for the production of selenium rectifier plates with a multilayer cover electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US2787745A true US2787745A (en) | 1957-04-02 |
Family
ID=7478734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US325212A Expired - Lifetime US2787745A (en) | 1951-12-20 | 1952-12-10 | Counter electrode for dry disk type rectifiers |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US2787745A (en) |
| BE (1) | BE516364A (en) |
| CH (1) | CH314470A (en) |
| DE (1) | DE975845C (en) |
| GB (1) | GB718354A (en) |
| NL (1) | NL174375B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1176282B (en) * | 1962-07-23 | 1964-08-20 | Ckd Modrany Narodni Podnik | Selenium rectifier |
| US3243293A (en) * | 1965-03-26 | 1966-03-29 | Xerox Corp | Plate for electrostatic electro-photography |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2279746A (en) * | 1939-10-13 | 1942-04-14 | Union Switch & Signal Co | Alternating electric current rectifier of the selenium type |
| GB551698A (en) * | 1941-09-02 | 1943-03-05 | Westinghouse Brake & Signal | Improvements relating to alternating electric current rectifiers of the selenium type |
| GB576671A (en) * | 1944-03-02 | 1946-04-15 | Westinghouse Brake & Signal | Improvements relating to dry alternating current rectifiers of the dry surface contact type |
| US2496432A (en) * | 1946-05-21 | 1950-02-07 | Westinghouse Electric Corp | Selenium rectifier |
| US2510322A (en) * | 1945-09-22 | 1950-06-06 | Union Switch & Signal Co | Selenium rectifier |
| US2602763A (en) * | 1948-12-29 | 1952-07-08 | Bell Telephone Labor Inc | Preparation of semiconductive materials for translating devices |
| US2603693A (en) * | 1950-10-10 | 1952-07-15 | Bell Telephone Labor Inc | Semiconductor signal translating device |
| US2718688A (en) * | 1949-07-30 | 1955-09-27 | Siemens Ag | Method of manufacturing dry rectifiers |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE623488C (en) * | ||||
| DE519161C (en) * | 1927-12-06 | 1931-02-25 | Ernst Presser | AC rectifier with rectifier material arranged between two electrodes |
| US2193610A (en) * | 1938-02-17 | 1940-03-12 | Westinghouse Electric & Mfg Co | Selenium contact electrode |
| IT379083A (en) * | 1938-06-14 | |||
| DE966967C (en) * | 1939-03-02 | 1957-09-19 | Aeg | Electrically asymmetrically conductive system, especially dry rectifier |
| GB556152A (en) * | 1942-03-17 | 1943-09-22 | Westinghouse Brake & Signal | Improvements relating to alternating electric current rectifiers of the selenium type |
| GB584554A (en) * | 1944-10-25 | 1947-01-17 | Westinghouse Brake & Signal | Improvements relating to alternating electric current rectifiers of the selenium type |
| NL97133C (en) * | 1959-08-01 | 1900-01-01 |
-
0
- NL NLAANVRAGE7212358,A patent/NL174375B/en unknown
- BE BE516364D patent/BE516364A/xx unknown
-
1951
- 1951-12-20 DE DES26432A patent/DE975845C/en not_active Expired
-
1952
- 1952-11-13 CH CH314470D patent/CH314470A/en unknown
- 1952-12-10 US US325212A patent/US2787745A/en not_active Expired - Lifetime
- 1952-12-12 GB GB31559/52A patent/GB718354A/en not_active Expired
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2279746A (en) * | 1939-10-13 | 1942-04-14 | Union Switch & Signal Co | Alternating electric current rectifier of the selenium type |
| GB551698A (en) * | 1941-09-02 | 1943-03-05 | Westinghouse Brake & Signal | Improvements relating to alternating electric current rectifiers of the selenium type |
| GB576671A (en) * | 1944-03-02 | 1946-04-15 | Westinghouse Brake & Signal | Improvements relating to dry alternating current rectifiers of the dry surface contact type |
| US2510322A (en) * | 1945-09-22 | 1950-06-06 | Union Switch & Signal Co | Selenium rectifier |
| US2496432A (en) * | 1946-05-21 | 1950-02-07 | Westinghouse Electric Corp | Selenium rectifier |
| US2602763A (en) * | 1948-12-29 | 1952-07-08 | Bell Telephone Labor Inc | Preparation of semiconductive materials for translating devices |
| US2718688A (en) * | 1949-07-30 | 1955-09-27 | Siemens Ag | Method of manufacturing dry rectifiers |
| US2603693A (en) * | 1950-10-10 | 1952-07-15 | Bell Telephone Labor Inc | Semiconductor signal translating device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1176282B (en) * | 1962-07-23 | 1964-08-20 | Ckd Modrany Narodni Podnik | Selenium rectifier |
| US3243293A (en) * | 1965-03-26 | 1966-03-29 | Xerox Corp | Plate for electrostatic electro-photography |
Also Published As
| Publication number | Publication date |
|---|---|
| NL174375B (en) | |
| CH314470A (en) | 1956-06-15 |
| BE516364A (en) | |
| GB718354A (en) | 1954-11-10 |
| DE975845C (en) | 1962-10-25 |
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