US20030031928A1 - Electrochemical device - Google Patents
Electrochemical device Download PDFInfo
- Publication number
- US20030031928A1 US20030031928A1 US10/226,346 US22634602A US2003031928A1 US 20030031928 A1 US20030031928 A1 US 20030031928A1 US 22634602 A US22634602 A US 22634602A US 2003031928 A1 US2003031928 A1 US 2003031928A1
- Authority
- US
- United States
- Prior art keywords
- oxide
- alloyed
- nickel oxide
- layer
- target according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 47
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 30
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 27
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 65
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000002346 layers by function Substances 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 229910052770 Uranium Inorganic materials 0.000 claims description 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 4
- 150000001340 alkali metals Chemical class 0.000 claims description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 4
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- 229910052792 caesium Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 230000005294 ferromagnetic effect Effects 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- 229910052701 rubidium Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910005889 NiSix Inorganic materials 0.000 claims description 2
- 229910000946 Y alloy Inorganic materials 0.000 claims description 2
- 230000033001 locomotion Effects 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000005307 ferromagnetism Effects 0.000 abstract description 3
- 239000000654 additive Substances 0.000 description 20
- 230000000996 additive effect Effects 0.000 description 15
- 230000005540 biological transmission Effects 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 239000003792 electrolyte Substances 0.000 description 7
- 238000004042 decolorization Methods 0.000 description 6
- 229910005855 NiOx Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000002322 conducting polymer Substances 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000036571 hydration Effects 0.000 description 2
- 238000006703 hydration reaction Methods 0.000 description 2
- 230000033444 hydroxylation Effects 0.000 description 2
- 238000005805 hydroxylation reaction Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- NCXOIRPOXSUZHL-UHFFFAOYSA-N [Si].[Ca].[Na] Chemical compound [Si].[Ca].[Na] NCXOIRPOXSUZHL-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004737 colorimetric analysis Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000006713 insertion reaction Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- DCYOBGZUOMKFPA-UHFFFAOYSA-N iron(2+);iron(3+);octadecacyanide Chemical compound [Fe+2].[Fe+2].[Fe+2].[Fe+3].[Fe+3].[Fe+3].[Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] DCYOBGZUOMKFPA-UHFFFAOYSA-N 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000000803 paradoxical effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 239000012078 proton-conducting electrolyte Substances 0.000 description 1
- 230000005588 protonation Effects 0.000 description 1
- 229960003351 prussian blue Drugs 0.000 description 1
- 239000013225 prussian blue Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/085—Oxides of iron group metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
- G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
- G02F1/1524—Transition metal compounds
Definitions
- Preferred embodiments are NiSi x O y , NiAl x O y , NiSn x O y , NiW x O y , NiZn x O y , NiTa x O y and NiY x O y .
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Nonlinear Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
The invention relates to an essentially metallic target of a cathodic sputtering device, in particular a magnetic-field-assisted device, the said target mainly comprising nickel alloyed with at least one other minor element in order to reduce or eliminate its ferromagnetism. The invention also relates to the use of the target to manufacture an electrochromic material with anodic colourization as a thin layer based on alloyed nickel oxide.
Description
- The invention relates to electrochemical devices, and in particular electrically controllable systems with variable optical and/or energetic properties of the electrochromic glazing or mirror type.
- In a known manner, electrochromic systems comprise a layer of an electrochromic material capable of reversibly and simultaneously inserting ions and electrons and whose oxidation states corresponding to the inserted and de-inserted states are of distinct colourization, one of the states presenting greater light transmission than the other, the insertion or de-insertion reaction being controlled by a suitable electrical supply. The electrochromic material, usually based on tungsten oxide, must thus be placed in contact with a source of electrons such as a transparent electrically conductive layer and a source of ions (cations or anions) such as an ionic conductive electrolyte.
- Moreover, it is known that in order to ensure at least a hundred switching operations, the layer of electrochromic material must be combined with a counterelectrode also capable of reversibly inserting ions, symmetrically relative to the layer of electrochromic material, such that, macroscopically, the electrolyte appears as a simple medium of ions.
- The counterelectrode must consist of a colour-neutral layer, or a layer which is at least transparent or only slightly coloured when the electrochromic layer is in the coloured state. Since tungsten oxide is a cathodic electrochromic material, i.e. its coloured state corresponds to the most reduced state, an anodic electrochromic material based on nickel oxide or iridium oxide is generally used for the counterelectrode. It has also been proposed to use a material which is optically neutral in the oxidation states concerned, such as, for example, cerium oxide or organic materials such as electron-conducting polymers (polyaniline, etc.) or Prussian blue.
- A description of such systems will be found, for example, in European patents EP-A-0 338,876, EP-A-0 408 427, EP-A-0 575 207 and EP-A-0 628 849.
- These systems can currently be classified in two categories, depending on the type of electrolyte they use:
- either the electrolyte is in the form of a polymer or a gel, for example a proton-conducting polymer such as those disclosed in European patents EP-A-0 253 713 and EP-A-0 670 346, or a lithium-ion-conducting polymer such as those disclosed in patents EP-A-0 382 623, EP-A-0 518 754 or EP-A-0 532 408,
- or the electrolyte is a mineral layer, which conducts ions but is electronically insulating, such systems being referred to as “all-solid” electrochromic systems. For the description of an “all-solid” electrochromic system, reference may be made to European patent applications EP-A-0 867 752 and EP-A-0 831 360.
- The present invention is directed most particularly towards obtaining layers of anodic electrochromic material based on nickel oxide which are capable of forming a part of such electrochromic systems.
- As mentioned above, nickel oxide is known to have such a property, and is described as such in particular in patent EP-0 373 020 B1.
- However, this material has a drawback: certain difficulties arise in obtaining it in the form of a thin layer by a standard vacuum deposition process, magnetic-field-assisted reactive cathodic sputtering: since nickel is ferromagnetic, using a standard nickel target and a standard magnet, the magnetic field developed at the surface of the target is weak, resulting in a low deposition rate and mediocre exploitation of the target.
- This type of material was also studied in patent application WO 98/14824: in an application to electrochromic mirrors, studies were carried out on nickel oxides alloyed with another metal such as vanadium, chromium, manganese, iron or cobalt, this change of composition being said to improve the functionality of the mirror, and in particular to give it a more uniform colour.
- However, introducing other metals into the nickel oxide in this way appears to entail risks as regards the optical and electrochemical properties of the nickel oxide. Thus, it may be feared, for example, that the introduction of vanadium and chromium, the oxides of which absorb in the visible region, tends to make the nickel oxide more absorbent and, consequently, tends to reduce the light transmission value of the active system as a whole when it is in the decolourized state. Similarly, the introduction of manganese, iron and cobalt may tend to lower the durability of the layer and thus of the active system as a whole.
- The aim of the invention is thus to remedy these drawbacks, in particular by proposing a new method for producing nickel oxide with anodic electrochromic properties, this production method in particular being faster, more economically viable and simpler to carry out, without otherwise compromising the desired functionality in the nickel oxide. This “functionality” is directed in particular towards its stability, its durability of functioning in an electrochromic system, most particularly of H +-conducting type or Li+-conducting type and of “all-solid” type, and its transparency in the decolourized state, when it is in a thin layer.
- A subject of the invention is firstly an essentially metallic target of a cathodic sputtering device, preferably a magnetic-field-assisted device, in particular in a reactive atmosphere in the presence of oxygen to obtain the corresponding metal oxide as a thin layer, the said target mainly comprising nickel and being alloyed with at least one other minor element in order to reduce or even eliminate its ferromagnetic nature, while at the same time preserving as well as possible the optical and/or electrochemical properties of the alloyed nickel oxide layer obtained from this target.
- Specifically, the invention thus makes an advantageous compromise by making it possible to obtain, by reactive sputtering, layers based on nickel oxide in much higher rates and better economic viability of the target, without degrading their functionality, by adding carefully selected elements to the target. The maximum effect in terms of gain in production efficiency is reached by completely eliminating the ferromagnetic nature of the nickel, but it may be chosen simply to decrease it, by appropriately modifying the chemical nature of the element added and the amount of this element incorporated into the target.
- Generally, the proportion of this or these minor element(s) in the alloy remains not more than 20 atom % relative to the combined nickel+minor element(s), preferably especially not more than 18%, and for example between 3% and 15%.
- For the purposes of the invention, the term “nickel oxide” means nickel oxide which may be hydrated and/or hydroxylated and/or protonated (and optionally nitride-treated) to varying degrees. Similarly, the stoichiometry between the nickel and the oxygen may generally vary in an Ni/O ratio ranging between 1 and ½. However, it may be considered that the nickel is generally predominantly in oxidation state+2.
- Different variants are possible as regards the chemical nature of the target, these being alternative or cumulative variants.
- A first variant consists in this minor element (denoted hereinbelow by the term “additive” for simplicity) being a metal whose oxide is an electrochromic material with anodic colourization. It may in particular be at least one of the following metals: Ir, Ru, Rh. Ideally, this is moreover most particularly the case for iridium, the corresponding oxides have an operating voltage range which is identical or close to that of nickel oxide: far from disrupting the functionality of the nickel oxide, the additive makes it possible to keep it intact and possibly even to increase its reversible ion-inserting capacity. It may even, in this case, be envisaged to reduce the thickness of the layer while still keeping the same level of optical/energetic modification as that of a thicker layer of nickel oxide.
- A second variant consists in the additive being a metal whose oxide is an electrochromic material with cathodic colourization. It may be in particular at least one of the following metals: Mo, W, Re, Sn, In, Bi. It may appear paradoxical and liable to result in disruptions to introduce such a material into the nickel oxide in this way. In fact, it has been found that the abovementioned metal oxides have cathodic ion-inserting capacities in operating voltage ranges that are well beyond the potentials reached by the nickel oxide used as anodic electrochromic material. Consequently, these additives which are effectively found in oxidized form in the nickel oxide are inert and remain colourless when the nickel oxide undergoes colour variations by being placed under tension; these additives are neutralized when the active system is functioning and do not reduce its level of light transmission in the decolourized state. On the other hand, their presence tends to reduce the ion-inserting capacity of the layer as a whole, and it is then possible, if necessary, to increase its thickness slightly to compensate for this phenomenon, this measure also being conceivable for all the variants which follow.
- A third variant consists in the additive being made of a metal, an alkaline-earth metal or a semiconductor whose hydrated and/or hydroxylated oxide is a proton conductor. It may be in particular at least one of the following elements: Ta, Zn, Zr, Al, Si, Sb, U, Be, Mg, Ca, Y. These materials in oxidized form have no noteworthy electrochromic properties. On the other hand, they are known for their ability to serve as a material which is capable of serving as proton-conducting electrolyte in electrochromic systems: although they do not intrinsically promote the electrochromic property of nickel oxide, they at any rate have no negative impact on its functionality and tend rather to promote the stability of the hydroxylation/hydration which may be desired for the nickel oxide. Needless to say, it should be noted that this variant is essentially directed towards electrochromic systems which function by reversible insertion of protons, H +.
- A fourth variant consists in the additive being an element whose oxide is hygroscopic, this characteristic being advantageous here also when the electrochromic system concerned is one functioning by insertion/de-insertion of ions, and most particularly of cations such as protons. These additives are typically alkali metals, in particular Li, Na, K, Rb, Cs. When in oxidized form in the nickel oxide, it is found that these materials improve the stability of the nickel oxide when it acts as an anodic electrochromic material in an electrochromic system, most particularly when thin nickel oxide is hydrated/hydroxylated, quite probably by promoting the retention of the water contained in the layer.
- The preferred embodiments of the target of the invention are the alloys Ni/Si, Ni/Al, Ni/Sn, Ni/W, Ni/Zn, Ni/Ta and Ni/Y, the first three alloys being the cheapest to manufacture. The alloy targets are manufactured in a manner which is known in this field of vacuum deposition, for example by hot sintering of the metal powders to be alloyed. Indications regarding the atomic proportions of some of the additives relative to the whole alloy considered are given below, the proportions being adjusted such that the ferromagnetism of the target is completely eliminated:
- for an Ni/W alloy, it is necessary to provide about 7 atom % of tungsten, W,
- for an Ni/Zn alloy, it is necessary to provide about 18 atom % of zinc, Zn,
- for an Ni/Ta alloy, it is necessary to provide about 9 atom % of tantalum, Ta,
- for an Ni/Sn alloy, it is necessary to provide about 8 atom % of tin, Sn,
- for an Ni/Si alloy, it is necessary to provide about 10 atom % of silicon, Si,
- for an Ni/Y alloy it is necessary to provide about 3 atom % of yttrium, Y.
- However, as mentioned above, it may also be chosen to add to the nickel an amount of additive less than that which would be necessary to completely eliminate its ferromagnetism, for example in order to limit the manufacturing cost of the target and/or to limit any reduction in functionality of the alloyed nickel oxide layer obtained.
- A subject of the invention is also the process for manufacturing a thin layer based on alloyed nickel oxide, which is optionally hydrated and/or hydroxylated and/or protonated and/or nitride-treated, and which uses the technique of magnetic-field-assisted cathodic sputtering in an oxidizing reactive atmosphere, from the target described above.
- A subject of the invention is also the use of this process to manufacture an anodic electrochromic material as a thin layer based on the said oxide.
- A subject of the invention is also the electrochemical device comprising at least one carrier substrate fitted with a stack of functional layers including at least one electrochemically active layer, which is capable of reversibly and simultaneously inserting ions such as H +, Li+ and OH− and electrons, the said layer being based on the said oxide.
- This oxide may be obtained from targets whose composition has been defined in the four variants outlined above. It may be noted moreover that, as a general rule, the atomic proportion of the additive(s) relative to the nickel in the alloy of the target is generally in the region of the atomic proportion of the additive relative to the nickel in the layer of oxide obtained from the target under consideration.
- It has been found that the addition of an additive according to the invention to the nickel target has an impact on the structure of the oxide layer obtained from the target in question. It appears that the presence of the additive disfavours the crystallization of the nickel oxide: layers that are mainly amorphous are thus obtained, with small crystal “grains”, which has been verified most particularly for the additives of the type W, Si and Li. By approximating their shape to a sphere, these grains have diameters generally of less than 50 nm and in particular of at least 2 to 3 nm. It is advantageous to have a larger amorphous phase and/or smaller crystal grains than in the case of standard nickel oxides, since it is above all the amorphous part of the layer, rather than its crystalline part, which is active in an electrochemical device exploiting the electrochromic properties of nickel oxide. The layers according to the invention do not therefore in principle have a sheet structure with an intercalation compound of the Li type between the sheets, but rather an overall amorphous structure with a homogeneous distribution as grains.
- The layer may be based on nickel oxide which is optionally hydrated/hydroxylated and/or nitride-treated, alloyed with at least one additive whose oxide is an anodic electrochromic material, such as Ir, Ro or Rh, or alloyed with at least one metal whose oxide is a cathodic electrochromic material, such as Mo, W, Re, Sn, In or Bi, or alloyed with at least one alkaline-earth metal or semiconductor whose hydrated and/or hydroxylated oxide is a proton conductor, such as Ta, Zn, Zr, Al, Si, Sb, U, Mg, La or Y. Finally, it may be alloyed with an additive whose oxide is hygroscopic, for instance an alkali metal such as Li, Na, K, Rb or Cs.
- It should be noted here that the term “alloyed” has the following meaning: the additive in question is combined with the nickel oxide in oxide form. This oxide may be in the form of a matrix formed from microdomains of nickel oxide, within which are microdomains based on the oxide of the additive in question. The system may also be a true mixed oxide, in which nickel atoms are replaced with atoms of the additive in question.
- Preferred embodiments are NiSi xOy, NiAlxOy, NiSnxOy, NiWxOy, NiZnxOy, NiTaxOy and NiYxOy.
- It may also be noted that the layers obtained mall be hydrated and/or hydroxylated and/or protonated and/or nitride-treated, and that the control of the degree of hydration, protonation and/or hydroxylation and/or nitride treatment of the layer is achieved in particular by appropriately adjusting the cathodic sputtering deposition parameters, for example by adapting the composition of the reactive atmosphere during the deposition (as was envisaged in particular for the layers of electrolyte in patent EP-A-0 831 360). The reactive atmosphere may in particular contain a certain amount of molecules at least one of the atoms of which is nitrogen.
- Finally, a subject of the invention is also the use of these electrochemical devices in order for them to form a part of electrochromic glazing. This glazing may equip buildings as exterior glazing or internal partitions or in glazed doors. It may also equip any means of locomotion such as trains, boats, aeroplanes, cars or vans, as side windows, sunroofs, etc. It may also be used in display screen glazing, for instance computer or television screens or touch screens, in spectacles, objectives of photographic equipment, and solar panel protections. It can also be used as a mirror, for example to make anti-glare rear-view mirrors for vehicles (by sufficiently thickening one of the electrically conductive layers and/or by adding an opacifying coating). It can also be used to make energy storage devices such as cells and batteries.
- Other advantageous details and characteristics of the invention will emerge below from various non-limiting embodiments.
- The examples which follow are of so-called “all-solid” electrochromic glazing.
- The glazing has the following sequence:
- Glass (1)/SrO2:F(2)/NiOxHy (3)/WO3 (4)/Ta2O5 (5)/HxWO3 (6)/ITO(7)
- 4 mm/300 nm 200 nm 100 nm 100 nm 250 nm 150 nm
- The glass (1) is a standard clear silicon-sodium-calcium plane glass,
- The layer (2) made of fluorine-doped tin oxide is the first transparent electrically conductive layer obtained in a known manner bit CVD,
- The layer (3) made of NiO xHy is the counterelectrode, the anodic electrochromic material of the system, obtained by cathodic sputtering in the presence of an Ar/O2/H2 reactive atmosphere from a nickel target containing about 99.95 atom % of nickel;
- The layer (4) made of WO 3 and (5) made of Ta2O5 forming the electrolyte are deposited in a known manner by cathodic sputtering from the target made of W and of Ta, (in particular in accordance with the teaching of patent EP-A-O 867 752);
- The layer (6) made of H xWO3 is the layer of cathodic electrochromic material. It is deposited in a known manner by reactive sputtering from a tungsten target;
- The layer (7) made of tin-doped indium oxide is the second transparent electrically conductive layer, also deposited in a known manner by cathodic sputtering from an alloy target made of indium and tin.
- This glazing functions by proton transfer from one electrochromic layer to the other, by changing the potential difference generated across the glazing in an appropriate manner.
- The layer (3) made of NiO xHy is obtained with difficulty. Its deposition rate is only 4 nm.m/minute. The target is not worn uniformly (its degree of wear is less than 5%;).
- This consists in replacing the layer (3) made of NiO xHy with a layer 3a made of NiSizOxHy 250 nm thick, obtained by cathodic sputtering in an Ar/O2/H2 reactive atmosphere from an Ni/Si alloy target with an atomic proportion of about 10% Si relative to Ni+Si.
- This consists in replacing the layer (3) made of NiO xHy with a layer 3b made of NiWzOxHy 250 nm thick, obtained as above but from an Ni/W alloy target with an atomic proportion of W of about 7% relative to Ni+W.
- Table 1 below indicates the deposition rates v of the layers based on nickel oxide obtained in accordance with the three examples above, these rates being expressed in nm.m/minutes (for a deposition at 3.5 W/cm 2):
TABLE 1 V Comparative Example 1 4 Example 2 20 Example 3 25 - The glasses coated with the layers described above are provided with power supplies connected in a known manner to a voltage generator. They are then laminated with a second glass identical to the first via a sheet of polyurethane 1.25 mm thick.
- The three laminated glazing samples were then subjected to a colourization/decolourization cycle (colourization by applying a voltage of about −1.2 V across, and decolourization by applying a voltage of about 0.8 V across). The light transmission values T L in %, of a* and b* in the colorimetry system (L, a*, b*) in light transmission, and the energy transmission values TE in % (reference for the TL measurements: illuminant D65) were then measured, when the glazing samples are coloured (“colourization”) and then decolorized (“decolourization”). Table 2 below collates all these data for the three glazing samples:
TABLE 2 TL a* b* TE Example 1 colourization 13.6% −3.8 −2.9 10.2% decolourization 80.0% −2.4 7.2 67.2% Example 2 colourization 14.3% −3.5 −3.0 11.2% decolourization 79.2% −2.9 5.4 66.8% Example 3 colourization 12.2% −3.0 −3.5 9.8% decolourization 80.5% −2.3 5.6 67.9% - From these data it is possible to verify that the changes made to the electrochromic material based on nickel oxide do not affect its performance qualities: the light transmission ranges and energy transmission ranges achieved with Examples 2 and 3 according to the invention are virtually identical to those of Comparative Example 1, and the colorimetric appearance in transmission is not significantly modified either. On the other hand, the rates of deposition of the layers based on nickel oxide according to the invention are at least five times as high as the rate of deposition of a standard layer based on nickel oxide.
Claims (21)
1. Essentially metallic target of a cathodic sputtering device, in particular a magnetic-field-assisted device, the said target mainly comprising nickel, characterized in that the nickel is alloyed with at least one other minor element in order to reduce or eliminate its ferromagnetic nature.
2. Target according to claim 1 , characterized in that the proportion of the said element(s) in the alloy is not more than 20 atom %, in particular not more than 18%, preferably between 3% and 15%.
3. Target according to either of the preceding claims, characterized in that the minor element is a metal whose oxide is an electrochromic material with anodic colourization.
4. Target according to claim 3 , characterized in that the minor element is chosen from Ir, Ru and Rh.
5. Target according to one of the preceding claims, characterized in that the minor element is a metal whose oxide is an electrochromic material with cathodic colourization.
6. Target according to claim 5 , characterized in that the metal is chosen from Mo, W, Re, Sn, In and Bi.
7. Target according to one of the preceding claims, characterized in that the minor element is a metal or an alkaline-earth metal or a semiconductor whose hydrated or hydroxylated oxide is a proton conductor.
8. Target according to claim 7 , characterized in that the minor element is chosen from Ta, Zn, Zr, Al, Si, Sb, U, Be, Mg, Ca and Y.
9. Target according to one of the preceding claims, characterized in that the minor element is an element whose oxide is hygroscopic, of the alkali metal type.
10. Target according to claim 9 , characterized in that the element whose oxide is hygroscopic is chosen from Li, Na, K, Rb and Cs.
11. Target according to one of the preceding claims, characterized in that it is made of an Ni/Si, Ni/Al, Ni/Sn, Ni/W, Ni/Zn, Ni/Ta or Ni/Y alloy.
12. Process for manufacturing a thin layer based on alloyed nickel oxide, which is optionally hydrated/hydroxylated or protonated and/or nitride-treated, by magnetic-field-assisted cathodic sputtering in an oxidizing reactive atmosphere, characterized in that it uses the target according to one of the preceding claims.
13. Use of the process according to claim 12 to manufacture an electrochromic material with anodic colourization as a thin layer based on alloyed nickel oxide, which is optionally hydrated/hydroxylated and/or protonated and/or nitride-treated.
14. Electrochemical device comprising at least one carrier substrate fitted with a stack of functional layers including at least one electrochemically active layer, which are capable of reversibly and simultaneously inserting ions such as H+, Li+ and OH− and electrons, characterized in that the said electrochemically active layer is based on alloyed nickel oxide obtained by the process according to claim 12 and/or from the target according to one of claims 1 to 11 .
15. Electrochemical device according to claim 14 , characterized in that the alloyed nickel oxide is in mainly amorphous form, with crystal grains preferably having a diameter of not more than 50 nm.
16. Electrochemical device comprising at least one carrier substrate fitted with a stack of functional layers including at least one active electrochemical layer, which is capable of reversibly and simultaneously inserting ions such as H+, OH− and Li+ and electrons, characterized in that the said layer is based on nickel oxide, which is optionally hydrated and/or hydroxylated and/or protonated and/or nitride-treated, alloyed with at least one minor element in the form of a metal whose oxide is an anodic electrochromic material, chosen in particular from at least one of the following metals: Ir, Ru, Rh.
17. Electrochemical device comprising at least one carrier substrate fitted with a stack of functional layers including at least one electrochemically active layer, which is capable of reversibly and simultaneously inserting ions such as H+, OH− and Li+ and electrons, characterized in that the said layer is based on nickel oxide, which is optionally hydrated and/or hydroxylated and/or protonated and/or nitride-treated, alloyed with at least one minor element in the form of a metal whose oxide is a cathodic electrochromic material, chosen in particular from at least one of the following metals: Mo, W, Re, Sn, In, Bi.
18. Electrochemical device comprising at least one carrier substrate fitted with a stack of functional layers including at least one electrochemically active layer, which is capable of reversibly and simultaneously inserting ions such as H+, OH− and Li+ and electrons, characterized in that the said electrochemically active layer is based on nickel oxide, which is optionally hydrated and/or hydroxylated and/or protonated and/or nitride-treated, alloyed with at least one minor element in the form of a metal or an alkaline-earth metal or a semiconductor whose hydrated and/or hydroxylated oxide is a proton conductor, chosen in particular from at least one of the following elements: Ta, Zn, Zr, Al, Si, Sb, U, Be, Mg, Ca, Y.
19. Electrochemical device comprising at least one carrier substrate fitted with a stack of functional layers including at least one electrochemically active layer, which is capable of reversibly and simultaneously inserting ions such as H+, OH− and Li+ and electrons, characterized in that the said electrochemically active layer is based on nickel oxide, which is optionally hydrated and/or hydroxylated and/or nitride-treated, alloyed with at least one element whose oxide is hygroscopic, of the alkali metal type, chosen in particular from at least one of the following metals: Li, Na, K, Rb, Cs.
20. Electrochemical device according to either of claims 17 and 18, characterized in that the layer based on nickel oxide is in the form NiSixOy, NiAlxOy, NiSnxOy, NiWxOy, NiZnxOy, NiTaxOy or NiYxOy.
21. Use of the electrochemical device according to one of claims 14 to 20 to form a part of electrochromic glazing, in particular for buildings or means of locomotion such as trains, aeroplanes or cars, to form a part of display screens or to form a part of electrochromic mirrors such as rear-view mirrors of vehicles.
Priority Applications (2)
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| US10/226,346 US20030031928A1 (en) | 1999-05-20 | 2002-08-23 | Electrochemical device |
| US10/900,110 US7604717B2 (en) | 1999-05-20 | 2004-07-28 | Electrochemical device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9906408A FR2793888B1 (en) | 1999-05-20 | 1999-05-20 | ELECTROCHEMICAL DEVICE |
| FR99/06408 | 1999-05-20 | ||
| US74381201A | 2001-04-25 | 2001-04-25 | |
| US10/226,346 US20030031928A1 (en) | 1999-05-20 | 2002-08-23 | Electrochemical device |
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| PCT/FR2000/001388 Division WO2000071777A1 (en) | 1999-05-20 | 2000-05-19 | Electrochemical device |
| US09743812 Division | 2001-04-25 | ||
| US74381201A Division | 1999-05-20 | 2001-04-25 |
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| US10/900,110 Division US7604717B2 (en) | 1999-05-20 | 2004-07-28 | Electrochemical device |
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| US10/900,110 Expired - Fee Related US7604717B2 (en) | 1999-05-20 | 2004-07-28 | Electrochemical device |
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| Publication number | Publication date |
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| US7604717B2 (en) | 2009-10-20 |
| US20050008937A1 (en) | 2005-01-13 |
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