[go: up one dir, main page]

US20010054712A1 - Light receiving array, method of manufacturing the array, and optical encoder using the array - Google Patents

Light receiving array, method of manufacturing the array, and optical encoder using the array Download PDF

Info

Publication number
US20010054712A1
US20010054712A1 US09/883,344 US88334401A US2001054712A1 US 20010054712 A1 US20010054712 A1 US 20010054712A1 US 88334401 A US88334401 A US 88334401A US 2001054712 A1 US2001054712 A1 US 2001054712A1
Authority
US
United States
Prior art keywords
substrate
photoreceptors
insulating layer
photoreceptor array
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US09/883,344
Other languages
English (en)
Inventor
Toshihiko Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitutoyo Corp
Original Assignee
Mitutoyo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitutoyo Corp filed Critical Mitutoyo Corp
Assigned to MITUTOYO CORPORATION reassignment MITUTOYO CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AOKI, TOSHIHIKO
Publication of US20010054712A1 publication Critical patent/US20010054712A1/en
Priority to US10/370,593 priority Critical patent/US6759725B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
    • G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
    • G01D5/36—Forming the light into pulses
    • G01D5/38—Forming the light into pulses by diffraction gratings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the present invention relates to a photoreceptor array applicable to an optical encoder and method of manufacturing the same.
  • a small optical encoder may include a sensor head that employs an array of photoreceptors also serving as index gratings.
  • This photoreceptor array can provide four-phase displacement signals if four photoreceptors are arrayed in a set with a pitch of (2n ⁇ 1) ⁇ /4 where ⁇ is a pitch in scale gratings and n is a positive integer.
  • Such the photoreceptor array can be produced from photodiodes that are fabricated in a single crystal silicon substrate. In this case, however, the smaller the pitch in the array of photoreceptors the larger the crosstalk between photoreceptors adjoining with each other via the substrate. In order to produce a photoreceptor array without such the crosstalk, it is desirable to form photodiodes using amorphous silicon on an insulating substrate such that each photodiode is isolated from others. An array of pin photodiodes can be obtained when amorphous silicon of p-, i- and n-types are layered on the insulating substrate and subsequently etched.
  • an interval between PDs is as fine as 4 ⁇ m or below
  • the method of manufacturing a PD (photodiode) array using the etching of amorphous silicon layers makes an aspect ratio larger, remains etching residues easily and causes short faults between adjacent PDs.
  • a dry etching such as a plasma etching may be employed for fine etching of amorphous silicon. This etching process often imparts damages on PDs and diffuses impurities from sidewalls into PDs. For these reasons, the conventional method can not achieve an excellent PD property and high yield.
  • the present invention has an object to provide a photoreceptor array with an excellent device property and no short fault between adjacent photoreceptors and to provide a method of manufacturing such the photoreceptor array with a high yield.
  • the present invention is provided with a photoreceptor array, which comprises a substrate; an insulating layer formed on the substrate, the insulating layer having a plurality of trenches formed therein for burying devices; a plurality of photoreceptors formed from semiconductor layers buried in each of the trenches in the insulating layer; and an output signal line formed on the plurality of photoreceptors via an interlayer insulator.
  • the present invention is also provided with a method of manufacturing a photoreceptor array, which comprises the steps of providing a substrate; forming an insulating layer on the substrate; forming a plurality of trenches in the insulating layer; forming a plurality of photoreceptors from semiconductor layers buried in each of the trenches in the insulating layer; and forming an output signal line on the plurality of photoreceptors via an interlayer insulator.
  • the photoreceptor array is formed from the semiconductor layers buried in the trenches in the insulating layer on the substrate. Therefore, adjacent photoreceptors in the array can be isolated from each other reliably with no problem to cause a short fault therebetween. Accordingly, a fine pitch array of photoreceptors can be obtained with an excellent device property and high yield.
  • the substrate may be composed of a transparent substrate.
  • the photoreceptor array may further comprise a transparent electrode that is formed between the transparent substrate and the insulating layer and is operative as a lower electrode common to the plurality of photoreceptors.
  • the back surface of the substrate is employed to receive a light.
  • the photoreceptors have upper electrodes, and each of which is composed of a transparent electrode, the upper electrodes may be employed to receive a light from above.
  • the substrate is not required transparent and the lower electrode may be a metallic electrode.
  • the plurality of photoreceptors may have upper electrodes, each of which may be self-aligned with and buried in the trench. This can prevent short faults between photoreceptors in contrast to the case where the upper electrodes are etched for pattern formation.
  • the photoreceptor may be a pin or pn photodiode (PD).
  • PD photodiode
  • p-type layers in the plurality of PDs may be formed as a single and common p-type layer continuously on the common lower electrode.
  • An i-type layer and an n-type layer are buried and formed in each trench.
  • the present invention is further provided with an optical encoder, which comprises a scale having optical gratings formed thereon along a measurement axis; and a sensor head including a photoreceptor array for detecting displacements of the scale to provide a plurality of displacement signals with different phases.
  • an optical encoder which comprises a scale having optical gratings formed thereon along a measurement axis; and a sensor head including a photoreceptor array for detecting displacements of the scale to provide a plurality of displacement signals with different phases.
  • the photoreceptor array includes a substrate; a lower electrode formed on the substrate; an insulating layer formed on the substrate, the insulating layer having a plurality of trenches formed therein for burying devices; a plurality of photoreceptors formed from semiconductor layers buried in each of the trenches in the insulating layer, the plurality of photoreceptors each having an upper electrode formed thereon; and an output signal line formed on the plurality of photoreceptors via an interlayer insulator.
  • FIG. 1 shows an arrangement of an optical encoder of reflection type that employs a photoreceptor array of the present invention
  • FIG. 2 shows an arrangement of an optical encoder of transmission type that employs a photoreceptor array of the present invention
  • FIG. 3A is a top view showing an arrangement of a photoreceptor array according to an embodiment of the present invention.
  • FIG. 3B is a cross-sectional view taken along an A-A′ line in FIG. 3A;
  • FIGS. 4 - 14 are cross-sectional views showing process steps of manufacturing the photoreceptor array.
  • FIG. 15 is a cross-sectional view of another photoreceptor array.
  • FIGS. 1 and 2 show arrangements of optical encoders that employ a photoreceptor array of the present invention.
  • FIG. 1 shows a reflective optical encoder and FIG. 2 a transmissible optical encoder.
  • the optical encoders both comprise a scale 1 having optical gratings 11 formed thereon with a certain pitch of ⁇ along a measurement axis x and a sensor head 2 relatively movable and opposite to the scale 1 for reading the optical gratings.
  • the sensor head 2 includes a light source such as an LED 21 , index gratings 22 for modulating a light output from the source to irradiate the scale 1 , and a photoreceptor array 3 for receiving a light from the scale 1 .
  • the photoreceptor array 3 includes pin (or pn) photodiodes (PD) formed from amorphous silicon and arrayed on a transparent substrate 31 .
  • the PDs are formed on a surface of the transparent substrate 31 opposite to the surface that faces to the scale 1 .
  • the photoreceptor array 3 detects a light that enters through the transparent substrate 31 .
  • FIGS. 3 A- 3 B are a top view showing an embodied arrangement of the photoreceptor array 3 and a cross-sectional view thereof taken along an A-A′ line.
  • the transparent substrate 31 is composed of a glass substrate, for example.
  • a transparent electrode 32 that is employed as a lower electrode (p-side electrode) common to the photoreceptor array 3 .
  • a p-type amorphous silicon layer (hereinafter simply referred to as a “p-type layer”) 33 that is employed as an anode layer common to the photoreceptor array 3 .
  • the transparent electrode 32 comprises a film of transparent conductor selected from ITO, SnO 2 , ZnO and the like.
  • An insulating layer 41 is formed on the p-type layer 33 above the substrate.
  • the insulating layer 41 has narrow long rectangular trenches 42 formed therein with a certain pitch of 3 ⁇ /4, for example, where ⁇ is a scale pitch.
  • Each trench 42 is employed to bury a PD.
  • a part of the PD actually buried in the trench 42 includes an i-type amorphous silicon layer (hereinafter simply referred to as an “i-type layer”) 34 .
  • the part also includes an n-type amorphous silicon layer (hereinafter simply referred to as an “In-type layer”) 35 as a cathode layer that is laminated on the i-type layer 34 , and an upper electrode (n-side electrode) 36 that contacts the n-type layer 35 .
  • In-type layer n-type amorphous silicon layer
  • n-side electrode upper electrode
  • An interlayer insulator 51 is formed on the insulating layer 41 that includes the PDs buried therein.
  • Output signal lines 52 are formed on the interlayer insulator 51 and are connected to the n-side electrode 36 in each PD.
  • Four signal lines 52 are provided to obtain four-phase outputs with A-, BB-, AB- and B-phases as shown in FIG. 3A. They respectively contact the n-side electrode 36 in the corresponding PD via contact holes 54 .
  • FIGS. 4 - 14 Process steps of manufacturing the photoreceptor array 3 will be described using cross sections of FIGS. 4 - 14 corresponding to the cross section of FIG. 3B.
  • the transparent electrode 32 is formed over the whole surface of the transparent substrate 31 and the p-type layer 33 is then formed over the transparent electrode 32 .
  • the insulating layer 41 is deposited thereon as shown in FIG. 5.
  • the insulating layer 41 has a specific laminated structure with a thick film of silicon oxide (SiO 2 ) 41 a formed by CVD and a thin film of silicon nitride (Si 3 N 4 ) 41 b formed by plasma CVD.
  • the trenches 42 are formed in the insulating layer 41 as shown in FIG. 6. Specifically, a resist pattern is formed by lithography, then the silicon nitride 41 b is etched by RIE, and the silicon oxide 41 a is etched by RIE using a different gas. In this case, if a conditioned large selective etching ratio to the silicon nitride is employed when the silicon oxide 41 a is etched, the silicon nitride 41 b serves as an etching mask. As a result, the thick silicon oxide 41 a can be etched to form the trench 42 with vertical sidewalls.
  • the i-type layer 34 is deposited thereon as shown in FIG. 7. Then, the i-type layer 34 is subjected to planarization by CMP (Chemical Mechanical Polishing) to be buried in the trench 42 as shown in FIG. 8. Further, the i-type layer 34 is subjected to a recess etching by a dry or wet etching to make a certain recessed step above the i-type layer 34 that is buried in the trench 42 as shown in FIG. 9.
  • CMP Chemical Mechanical Polishing
  • the n-type layer 35 is deposited thereon as shown in FIG. 10.
  • the n-type layer 35 is then subjected to CMP planarization and recess etching to obtain such the n-type layer 35 that is buried in the trench 42 up to a certain recessed step as shown in FIG. 11.
  • the n-side electrode (metallic electrode) 36 is buried in the trench 42 and formed to contact the adjacent n-type layers 35 .
  • the process of burying the n-side electrode 36 is also performed through deposition and planarization of a metallic film.
  • the interlayer insulator 51 is deposited by CVD as shown in FIG. 13.
  • the interlayer insulator 51 has a stacked structure consisting of layers of silicon oxide 51 a, silicon nitride 51 b and silicon oxide 51 c.
  • a groove 53 for burying a line and a contact hole 54 are formed.
  • a metal is buried in the groove 53 and contact hole 54 to form the output signal line 52 as shown in FIG. 3B.
  • the output signal line 52 may be covered with a passivating film, if required.
  • the photoreceptor array can be produced from amorphous silicon while each of photoreceptors is reliably isolated from others. Only the recess etching is employed to slightly remove the surface of the amorphous silicon after it is buried in the trench. A wet etching can be employed as the recess etching to reduce damages imparting on the amorphous silicon. Thus, a fine pitch array of photoreceptors can be produced with an excellent property that includes no crosstalk, for example.
  • Such the photoreceptor array can be employed to configure an optical encoder with a high performance. As shown in FIGS. 1 and 2, the photoreceptor array 3 in the sensor head 2 is not opposed directly to the scale 1 and accordingly has no problem to be damaged and contaminated from contacting the scale 1 .
  • the substrate is composed of a transparent substrate and the photoreceptor array is configured to receive a light through the substrate.
  • the photoreceptor array may also be configured to receive a light from above at photoreceptors that are buried in trenches formed in an insulating layer.
  • FIG. 15 shows a cross-sectional structure, corresponding to FIG. 3B, of a photoreceptor array 3 a according to such the embodiment.
  • the substrate 31 a may not be a transparent substrate in contrast to FIG. 3B.
  • a metallic electrode is employed as a lower electrode 32 a common to PDs.
  • a transparent electrode is employed as an upper electrode 36 a of each PD. Process steps are the same as those in the previous embodiment.
  • a signal line to be connected to each upper electrode 36 a is omitted in FIG. 15. Though, it can contact an edge of the upper electrode 36 a and be drawn therefrom without covering the surface of the PD as long as possible.
  • the photoreceptor array in this embodiment is similarly applicable to an optical encoder but the surface, on which PDs are formed, must face to the scale in contrast to FIGS. 1 and 2.
  • the present invention is not intended to limit to the above embodiments.
  • other photoelectrically convertible semiconductors such as ZnSe and CdSe may also be employed while the amorphous silicon is used for the semiconductor layers in the above embodiments.
  • a p-type layer may be independently buried in each trench.
  • the order of stacking p-, i-and n-layers on the substrate is employed in the above embodiments to form a PD, though it can be reversed. In this case, output signal lines are to be formed beneath the insulating layer 41 .
  • Planarization may be performed through the use of etching such as dry etching and wet etching while it is executed by CMP in the above embodiments.
  • etching such as dry etching and wet etching while it is executed by CMP in the above embodiments.
  • a light beam is introduced obliquely into the scale 1 , though a reflective encoder of vertical entry type can be configured if the PD substrate 31 also serves as the index gratings 22 .
  • each photoreceptor in an array of photoreceptors is produced by burying semiconductor layers in a trench that is formed in an insulating layer on a substrate. Therefore, adjacent photoreceptors in the array are reliably isolated from each other. Accordingly, an array of photoreceptors can be produced with no problem to cause a short fault, an excellent device property, a fine pitch and a high yield.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Transform (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
US09/883,344 2000-06-21 2001-06-19 Light receiving array, method of manufacturing the array, and optical encoder using the array Abandoned US20010054712A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/370,593 US6759725B2 (en) 2000-06-21 2003-02-24 Light receiving array, method of manufacturing the array, and optical encoder using the array

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-186800 2000-06-21
JP2000186800A JP2002009328A (ja) 2000-06-21 2000-06-21 受光素子アレイ及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/370,593 Division US6759725B2 (en) 2000-06-21 2003-02-24 Light receiving array, method of manufacturing the array, and optical encoder using the array

Publications (1)

Publication Number Publication Date
US20010054712A1 true US20010054712A1 (en) 2001-12-27

Family

ID=18686899

Family Applications (2)

Application Number Title Priority Date Filing Date
US09/883,344 Abandoned US20010054712A1 (en) 2000-06-21 2001-06-19 Light receiving array, method of manufacturing the array, and optical encoder using the array
US10/370,593 Expired - Fee Related US6759725B2 (en) 2000-06-21 2003-02-24 Light receiving array, method of manufacturing the array, and optical encoder using the array

Family Applications After (1)

Application Number Title Priority Date Filing Date
US10/370,593 Expired - Fee Related US6759725B2 (en) 2000-06-21 2003-02-24 Light receiving array, method of manufacturing the array, and optical encoder using the array

Country Status (4)

Country Link
US (2) US20010054712A1 (de)
JP (1) JP2002009328A (de)
DE (1) DE10129334A1 (de)
GB (1) GB2368724B (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070278486A1 (en) * 2003-12-10 2007-12-06 Peter Speckbacher Scanning Head for Optical Position-Measuring Systems
US20090179200A1 (en) * 2008-01-10 2009-07-16 Hitachi, Ltd. Semiconductor device
US20100193834A1 (en) * 2005-10-17 2010-08-05 Sang Youl Lee Nitride semiconductor light emitting device and method of manufacturing the same
KR101316330B1 (ko) * 2010-08-13 2013-10-08 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
US20150340277A1 (en) * 2014-05-21 2015-11-26 Infineon Technologies Ag Method for manufacturing a semiconductor device and semiconductor device
CN114300491A (zh) * 2020-10-08 2022-04-08 株式会社日本显示器 检测装置、检测设备及带检测功能的显示装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006038992A1 (de) * 2006-08-21 2008-03-13 Carl Zeiss Smt Ag Anordnung aus zwei miteinander verbundenen Körpern
WO2008133016A1 (ja) * 2007-04-13 2008-11-06 Sharp Kabushiki Kaisha 光センサ及び表示装置
JP5562076B2 (ja) * 2010-03-10 2014-07-30 キヤノン株式会社 光学式エンコーダおよび変位計測装置
DE102010002902A1 (de) * 2010-03-16 2011-09-22 Dr. Johannes Heidenhain Gmbh Abtasteinheit für eine optische Positionsmesseinrichtung
WO2012022001A2 (de) * 2010-08-19 2012-02-23 Elesta Relays Gmbh Positionsmessvorrichtung und verfahren zur ermittlung einer absoluten position
CH703647A1 (de) * 2010-08-19 2012-02-29 Elesta Relays Gmbh Positionsmessvorrichtung und Verfahren zu deren Herstellung.

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5696877A (en) * 1979-12-30 1981-08-05 Shunpei Yamazaki Photoelectric converter
DE3209043C2 (de) * 1981-03-12 1986-09-25 Mitutoyo Mfg. Co., Ltd., Tokio/Tokyo Fotoelektrische Bewegungs-Meßeinrichtung
US5030828A (en) * 1990-06-25 1991-07-09 Grumman Aerospace Corporation Recessed element photosensitive detector array with optical isolation
EP0515849A3 (en) 1991-04-27 1993-05-19 Kanegafuchi Chemical Industry Co., Ltd. Image sensor
JP3203078B2 (ja) * 1992-12-09 2001-08-27 三洋電機株式会社 光起電力素子
GB9702991D0 (en) 1997-02-13 1997-04-02 Philips Electronics Nv Array of photosensitive pixels
JP4350220B2 (ja) * 1999-08-06 2009-10-21 株式会社ミツトヨ 変位測定装置
JP2002090114A (ja) 2000-07-10 2002-03-27 Mitsutoyo Corp 光スポット位置センサ及び変位測定装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070278486A1 (en) * 2003-12-10 2007-12-06 Peter Speckbacher Scanning Head for Optical Position-Measuring Systems
US7719075B2 (en) 2003-12-10 2010-05-18 Dr. Johannes Heidenhain Gmbh Scanning head for optical position-measuring systems
US20100193834A1 (en) * 2005-10-17 2010-08-05 Sang Youl Lee Nitride semiconductor light emitting device and method of manufacturing the same
US8866164B2 (en) 2005-10-17 2014-10-21 Lg Innotek Co., Ltd. Nitride semiconductor light emitting device and method of manufacturing the same
US20090179200A1 (en) * 2008-01-10 2009-07-16 Hitachi, Ltd. Semiconductor device
US8089067B2 (en) * 2008-01-10 2012-01-03 Hitachi, Ltd. Semiconductor device
KR101316330B1 (ko) * 2010-08-13 2013-10-08 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
US20150340277A1 (en) * 2014-05-21 2015-11-26 Infineon Technologies Ag Method for manufacturing a semiconductor device and semiconductor device
US9984917B2 (en) * 2014-05-21 2018-05-29 Infineon Technologies Ag Semiconductor device with an interconnect and a method for manufacturing thereof
CN114300491A (zh) * 2020-10-08 2022-04-08 株式会社日本显示器 检测装置、检测设备及带检测功能的显示装置

Also Published As

Publication number Publication date
JP2002009328A (ja) 2002-01-11
GB2368724A (en) 2002-05-08
GB2368724B (en) 2004-12-29
US20030164531A1 (en) 2003-09-04
GB0114829D0 (en) 2001-08-08
US6759725B2 (en) 2004-07-06
DE10129334A1 (de) 2002-01-31

Similar Documents

Publication Publication Date Title
US7476598B2 (en) Photodiode and method of manufacturing the same
KR100615916B1 (ko) 실리콘 온 인슐레이터(ｓｏｉ) 트랜치 광다이오드 및 그제조 방법
KR100460404B1 (ko) 회로내장 감광 장치
EP0996164B1 (de) Aktiver Bildsensor mit einer erhöhten pin-Diode und einer besonderen Verbindungsstruktur
TWI299565B (en) An image sensing device and fabrication thereof
US8119439B2 (en) Methods of manufacturing an image sensor having an air gap
US9136295B2 (en) Semiconductor device and method for manufacturing the same
US20030025138A1 (en) Three-dimensional island pixel photo-sensor
US6759725B2 (en) Light receiving array, method of manufacturing the array, and optical encoder using the array
CN107403799A (zh) 半导体器件及其制造方法
KR100778870B1 (ko) 반사 방식의 씨모스 이미지 센서 및 그의 제조 방법
US6215164B1 (en) Elevated image sensor array which includes isolation between uniquely shaped image sensors
US20210126157A1 (en) Method for producing a photoemitting or photoreceiving diode
US6551904B2 (en) Method of manufacturing photodiodes
EP1122790B1 (de) Eine elektrischleitende maschenförmige Spannungsanschlussstelle für eine Matrix von erhörter aktiver Bildsensoren
CN1197547A (zh) 光电二极管及其制造方法
US6649993B2 (en) Simplified upper electrode contact structure for PIN diode active pixel sensor
JP4629328B2 (ja) 光電検出装置及びその製造方法
US20090159943A1 (en) Image Sensor and Method for Manufacturing the Same
US4868623A (en) Image sensing device
US20050263840A1 (en) Photo diode and method for manufacturing same
US6384460B1 (en) Self-aligned metal electrode structure for elevated sensors
US5440149A (en) Planar type image sensor having electrodes on a photoelectric conversion layer
CN116779630B (zh) 一种图像传感器及其制造方法
JP2001237447A (ja) 光電変換素子及びその製造方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: MITUTOYO CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AOKI, TOSHIHIKO;REEL/FRAME:011919/0347

Effective date: 20010614

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION