[go: up one dir, main page]

US10153412B2 - Package structure for ultraviolet light-emitting diode - Google Patents

Package structure for ultraviolet light-emitting diode Download PDF

Info

Publication number
US10153412B2
US10153412B2 US15/234,176 US201615234176A US10153412B2 US 10153412 B2 US10153412 B2 US 10153412B2 US 201615234176 A US201615234176 A US 201615234176A US 10153412 B2 US10153412 B2 US 10153412B2
Authority
US
United States
Prior art keywords
optical device
ultraviolet light
substrate
emitting diode
packaging structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US15/234,176
Other versions
US20180047881A1 (en
Inventor
Zun-Hao Shih
Kai-Hsiang Yang
Jia-Ruei Chang
Hwen-Fen Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Nuclear Energy Research
Original Assignee
Institute of Nuclear Energy Research
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Nuclear Energy Research filed Critical Institute of Nuclear Energy Research
Priority to US15/234,176 priority Critical patent/US10153412B2/en
Assigned to Institute of Nuclear Energy Research, Atomic Energy Council, Executive Yuan, R.O.C. reassignment Institute of Nuclear Energy Research, Atomic Energy Council, Executive Yuan, R.O.C. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHANG, JIA-RUEI, HONG, HWEN-FEN, SHIH, ZUN-HAO, YANG, KAI-HSIANG
Publication of US20180047881A1 publication Critical patent/US20180047881A1/en
Application granted granted Critical
Publication of US10153412B2 publication Critical patent/US10153412B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H01L33/60—
    • H01L33/486—
    • H01L33/62—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Definitions

  • the present invention relates generally to a package structure, and particularly to a package structure for ultraviolet light-emitting diode (LED).
  • LED ultraviolet light-emitting diode
  • LEDs are light-emitting devices using semiconductors as the light-emitting material.
  • the principle of emitting light is to apply an external voltage to enable electrons and holes in semiconductors to recombine and thus emitting photons. Since no filament is required, LEDs own the features of mercury free, saving power, low power consumption, small size, long lifetime, fast response, and high light-emitting efficiency and avoid the drawbacks of huge heat generation and burnout. Accordingly, LEDs are called the fourth-generation light source or the green light source.
  • the wavelength of the light emitted by an LED is determined by the energy level of the fabrication material and can cover the wavelength range from the ultraviolet light, visible light, to the infrared.
  • Infrared LEDs can be applied in night monitor and optical fiber communication.
  • Visible-light LEDs include multiple colors, and are applied extensively in general lighting, indicators, backlights, and plant lighting.
  • Ultraviolet LEDs can be further classified into three segments of wavelength: UVA, UVB, and UVC.
  • the wavelength of the UVA light is between 320 and 400 nm and the UVA light is also called near ultraviolet light. It can be applied in identification of counterfeit money, ultraviolet light therapy, and air purification.
  • the wavelength of the UVB light is between 280 and 320 nm and the UVB light is applied in biotech industries and medical health protection.
  • the ultraviolet light having wavelengths less than 280 nm is the UVC, also called the deep ultraviolet light.
  • the UVC has the strongest energy among the three types, capable of penetrating the cell membrane and the cell nucleus of microorganisms and destroying the molecular bonds of nucleic acid. It is mainly applied in water or air sterilization systems.
  • UVA and UVB have been mature.
  • the related industries and research institutions keep developing the applications of UVC and breaking through the limitations of current technologies.
  • the current packaging technologies for ultraviolet LED are mainly the transistor outline can (TO-can) architecture. It owns excellent airtightness, and hence reducing the influence of the external environment on ultraviolet LED dies.
  • the TO-can packaging technology is performed using inorganic materials. The aging problem caused by long-term illumination of ultraviolet light will not occur, leading to superior reliability. Nonetheless, owing to the existence of pins in TO-can metal packages, the heat dissipating capability is limited and the leads become the bottleneck for thermal conduction efficiency. Consequently, the TO-can technology is limited to low-power ultraviolet LEDs.
  • the TO-can is a nonplanar packaging architecture, which imposes more spatial limitations on process backend modules and system integration.
  • the surface-mount device (SMD) packaging technology is a packaging technology for visible LEDs according to the prior art. It owns the advantages of small size, large angles of dispersion, and uniform light emission.
  • the spatial limitation problem can be solved by replacing the TO-can packaging technology with the SMD packaging method. Nonetheless, the SMD technology adopts organic high-polymers, such as silica gels, acrylics, or epoxy resins, for packaging. Under the illumination of ultraviolet light, the chemical bonds of the high-polymers will be destroyed.
  • the ultraviolet packages adopting organic high-polymers as the sealing material according to the prior art all face the problems of insufficient reliability and material aging.
  • the present invention improves the SMD package structure according to the prior art. In addition to keeping the advantages of the SMD structure according to the prior art, aging of the packaging materials can be prevented. Besides, the limitation of planar packages according to the prior art can be conquered as well.
  • An objective of the present invention is to provide a package structure for ultraviolet LED.
  • the wavelength of the light emitted by an ultraviolet LED ranges between 200 and 400 nm.
  • An optical device of the package structure includes silicon dioxide.
  • the transmittivity of the optical device for ultraviolet light is greater than 80%.
  • the package structure according to the present invention has superior light-emitting efficiency and transmittivity.
  • Another objective of the present invention is to provide a package structure for ultraviolet LED.
  • a metal film is disposed at the bottom of an optical device of the package structure for blocking ultraviolet light form illuminating the sealing material and thus preventing material aging.
  • the metal film can increase light emission of the ultraviolet LED.
  • a further objective of the present invention is to provide a package structure for ultraviolet LED.
  • a reflective ring is disposed on a substrate of the package structure and between the ultraviolet LED and the optical device for blocking lateral illumination of ultraviolet light and thus preventing material aging.
  • the reflective ring can also be used as the alignment mark for assembling the optical device and the substrate.
  • the present invention discloses a package structure for ultraviolet LED, which comprises a substrate, an ultraviolet LED, and an optical device.
  • the ultraviolet LED is disposed on the substrate.
  • the optical device includes silicon dioxide and a recess. The recess faces and hoods the substrate.
  • a sealing material is then used for attaching the substrate and the bottom of the optical device, so that the ultraviolet LED is located between the substrate and the optical device.
  • a metal film is disposed at the bottom of the optical device.
  • a reflective ring is disposed on the substrate and between the ultraviolet LED and the optical device.
  • an accommodating space is included between the substrate and the optical device.
  • the silicon dioxide is amorphous.
  • the junction between the bottom and a side surface of the optical device is a non-perpendicular junction.
  • the height of the sealing material is less than the height of the reflective ring.
  • the sealing material includes a gel.
  • the metal film includes aluminum.
  • FIG. 1A shows a structural schematic diagram of the package structure according to the present invention
  • FIG. 1B shows a structural schematic diagram of the bottom of the optical device according to the present invention.
  • FIG. 2 shows the optical paths of the ultraviolet light of the package structure according to the present invention.
  • the present embodiment provides a package structure for ultraviolet LED, which comprises an optical device.
  • the optical device includes amorphous silicon dioxide.
  • the ultraviolet light with a wavelength between 200 and 400 nm is able to penetrate the optical device, ensuring superior transmittivity and a broader wavelength range for ultraviolet-light penetration.
  • a reflective ring and a metal film the aging problem on the sealing material caused by ultraviolet-light illumination can be solved and the light-emitting efficiency of the ultraviolet LED can be enhanced. Accordingly, the limitations on planar packaging ultraviolet LEDs can be overcome.
  • the package structure according to the present invention comprises a substrate 100 , an ultraviolet LED 200 , and an optical device 300 .
  • the ultraviolet LED 200 is disposed on the substrate 100 .
  • the optical device 300 includes a recess 310 , which faces and hoods the substrate 100 , forming an accommodating space 400 .
  • a gel 350 is used for connecting the bottom of the optical device 320 and the substrate 100 , so that the ultraviolet LED 200 is located between the substrate 100 and the optical device 300 .
  • the optical device 300 is high-purity amorphous silicon dioxide.
  • the ultraviolet light with a wavelength between 200 and 400 nm is able to penetrate the optical device 300 with transmittivity over 80%.
  • the optical device 300 overcomes the limitation on direct press-molding of quartz, and forming the structure of the recess 310 and the accommodating space 400 .
  • the optical device 300 can hood the substrate 100 directly for replacing fluorescent gel packaging and isolating the influence of the external environment on the ultraviolet LED 200 .
  • the recess 310 of the optical device 300 hoods the substrate 100 directly, which is distinct from the general SMD structure having a reflective hood. Thereby, the light-emitting angle of the ultraviolet LED 200 can be increased.
  • a reflective ring 110 is further disposed on the substrate 100 and between the ultraviolet LED 200 and the optical device 300 .
  • a guiding hole 120 and a metal circuit board 130 are disposed on the substrate 100 and between the reflective ring 110 and the ultraviolet LED 200 .
  • a gold wire 140 is used for connecting the ultraviolet LED 200 to the metal circuit board 130 .
  • a metal film 340 is disposed on the bottom of the optical device 320 . The junction between the bottom of the optical device 320 and a side surface is a non-perpendicular junction 330 .
  • Packaging an ultraviolet LED device includes three steps: die fixing, wire bonding, and packaging.
  • the ultraviolet LED 200 is placed on the substrate 100 and connected to the metal circuit board 130 using the gold wire 140 .
  • the optical device 300 is placed on the substrate 100 .
  • the reflective ring 110 disposed on the substrate 100 can be used as an alignment mark for placing the optical device 300 .
  • the optical device 300 is pressed and uses the gel 350 for gluing, so that the bottom of the optical device 320 is attached tightly to the substrate 100 . Because the junction between the bottom of the optical device 320 and a side surface is the non-perpendicular junction 330 , during the attachment process, the gel 350 will not spill into the accommodating space 400 but be squeezed outwards.
  • the reflective ring 110 disposed between the bottom of the optical device 320 and the ultraviolet LED 200 can prevent the gel 350 from spilling into the accommodating space 400 as well.
  • FIG. 2 shows the optical paths of the ultraviolet light of the package structure according to the present invention.
  • the present invention ensures the reliability of the gel 350 in the package structure through the following methods.
  • the metal film 340 includes aluminum, which is the only thin-film material capable of reflecting short wavelengths. It has high reflectivity for ultraviolet light; it also adheres tightly to optical devices.
  • the ultraviolet light B illuminates the optical device 300 and forms the reflection light B′.
  • the reflection light B′ then illuminates the metal film 340 and is reflected to form the reflection light C.
  • the gel 350 can be free from the illumination of ultraviolet light and thus avoiding aging. Meanwhile, the light emission of the ultraviolet LED can be increased as well.
  • the other method is to include the reflective ring 110 between the ultraviolet LED 200 and the optical device 300 . Because the height of the reflective ring 110 is greater than the height of the gel 350 , as the ultraviolet light A illuminates the reflective ring 110 , the reflection light A′ will be formed, and hence blocking the ultraviolet light from illuminating laterally to the gel 350 . Accordingly, prevention of material aging can be achieved.
  • the package structure for ultraviolet LED according to the present invention adopts the amorphous silicon dioxide as the optical device, which can be penetrated by the ultraviolet light having wavelength between 200 and 400 nm with transmittivity above 80%.
  • the light-emitting performance of ultraviolet LEDs can be improved.
  • the limitations on press-molding of quartz according to the prior art owing to the high melting point of quartz is overcome for disposing the recess structure, which increase the light-emitting angle of the ultraviolet LED as well as the light emission.
  • the package structure according to the present invention blocks ultraviolet light from illuminating the gel directly by using the metal film and the reflective ring. Hence, the purpose of protecting materials from aging can be achieved.
  • the present invention overcomes the limitations on packaging ultraviolet LED devices planarly while keeping the advantages of planar packages. Thereby, it can replace the high-cost TO-scan package structure. Consequently, the applications of backend processes for ultraviolet LEDs can be extended
  • the present invention conforms to the legal requirements owing to its novelty, nonobviousness, and utility.
  • the foregoing description is only embodiments of the present invention, not used to limit the scope and range of the present invention. Those equivalent changes or modifications made according to the shape, structure, feature, or spirit described in the claims of the present invention are included in the appended claims of the present invention.

Landscapes

  • Led Device Packages (AREA)

Abstract

The present embodiment discloses a package structure for ultraviolet LED, which comprises a substrate, an ultraviolet light-emitting diode (LED), and an optical device. The wavelength of the light emitted by the ultraviolet LED is between 200 and 400 nm. The optical device includes amorphous silicon dioxide, and thus enabling the transmittivity of ultraviolet light greater than 80%. In addition, by including a reflective ring and a metal film, the material aging problem of the sealing material can be prevented by blocking direct ultraviolet-light illumination. The package structure according to the present invention overcomes the limitation on planar packaging, so that the applications of backend processes can be extended.

Description

FIELD OF THE INVENTION
The present invention relates generally to a package structure, and particularly to a package structure for ultraviolet light-emitting diode (LED).
BACKGROUND OF THE INVENTION
LEDs are light-emitting devices using semiconductors as the light-emitting material. The principle of emitting light is to apply an external voltage to enable electrons and holes in semiconductors to recombine and thus emitting photons. Since no filament is required, LEDs own the features of mercury free, saving power, low power consumption, small size, long lifetime, fast response, and high light-emitting efficiency and avoid the drawbacks of huge heat generation and burnout. Accordingly, LEDs are called the fourth-generation light source or the green light source.
The wavelength of the light emitted by an LED is determined by the energy level of the fabrication material and can cover the wavelength range from the ultraviolet light, visible light, to the infrared. Infrared LEDs can be applied in night monitor and optical fiber communication. Visible-light LEDs include multiple colors, and are applied extensively in general lighting, indicators, backlights, and plant lighting. Ultraviolet LEDs can be further classified into three segments of wavelength: UVA, UVB, and UVC. The wavelength of the UVA light is between 320 and 400 nm and the UVA light is also called near ultraviolet light. It can be applied in identification of counterfeit money, ultraviolet light therapy, and air purification. The wavelength of the UVB light is between 280 and 320 nm and the UVB light is applied in biotech industries and medical health protection. The ultraviolet light having wavelengths less than 280 nm is the UVC, also called the deep ultraviolet light. The UVC has the strongest energy among the three types, capable of penetrating the cell membrane and the cell nucleus of microorganisms and destroying the molecular bonds of nucleic acid. It is mainly applied in water or air sterilization systems. Currently, the applications and technologies of UVA and UVB have been mature. The related industries and research institutions keep developing the applications of UVC and breaking through the limitations of current technologies.
The current packaging technologies for ultraviolet LED are mainly the transistor outline can (TO-can) architecture. It owns excellent airtightness, and hence reducing the influence of the external environment on ultraviolet LED dies. In addition, the TO-can packaging technology is performed using inorganic materials. The aging problem caused by long-term illumination of ultraviolet light will not occur, leading to superior reliability. Nonetheless, owing to the existence of pins in TO-can metal packages, the heat dissipating capability is limited and the leads become the bottleneck for thermal conduction efficiency. Consequently, the TO-can technology is limited to low-power ultraviolet LEDs. In addition, the TO-can is a nonplanar packaging architecture, which imposes more spatial limitations on process backend modules and system integration.
The surface-mount device (SMD) packaging technology is a packaging technology for visible LEDs according to the prior art. It owns the advantages of small size, large angles of dispersion, and uniform light emission. The spatial limitation problem can be solved by replacing the TO-can packaging technology with the SMD packaging method. Nonetheless, the SMD technology adopts organic high-polymers, such as silica gels, acrylics, or epoxy resins, for packaging. Under the illumination of ultraviolet light, the chemical bonds of the high-polymers will be destroyed. The ultraviolet packages adopting organic high-polymers as the sealing material according to the prior art all face the problems of insufficient reliability and material aging. In order to overcome the drawbacks in the technologies according to the prior art, the present invention improves the SMD package structure according to the prior art. In addition to keeping the advantages of the SMD structure according to the prior art, aging of the packaging materials can be prevented. Besides, the limitation of planar packages according to the prior art can be conquered as well.
SUMMARY
An objective of the present invention is to provide a package structure for ultraviolet LED. The wavelength of the light emitted by an ultraviolet LED ranges between 200 and 400 nm. An optical device of the package structure includes silicon dioxide. The transmittivity of the optical device for ultraviolet light is greater than 80%. Compared with the ultraviolet LED according to the prior art, the package structure according to the present invention has superior light-emitting efficiency and transmittivity.
Another objective of the present invention is to provide a package structure for ultraviolet LED. A metal film is disposed at the bottom of an optical device of the package structure for blocking ultraviolet light form illuminating the sealing material and thus preventing material aging. In addition, the metal film can increase light emission of the ultraviolet LED.
A further objective of the present invention is to provide a package structure for ultraviolet LED. A reflective ring is disposed on a substrate of the package structure and between the ultraviolet LED and the optical device for blocking lateral illumination of ultraviolet light and thus preventing material aging. The reflective ring can also be used as the alignment mark for assembling the optical device and the substrate.
In order to achieve the above objectives, the present invention discloses a package structure for ultraviolet LED, which comprises a substrate, an ultraviolet LED, and an optical device. The ultraviolet LED is disposed on the substrate. The optical device includes silicon dioxide and a recess. The recess faces and hoods the substrate. A sealing material is then used for attaching the substrate and the bottom of the optical device, so that the ultraviolet LED is located between the substrate and the optical device.
Furthermore, a metal film is disposed at the bottom of the optical device. A reflective ring is disposed on the substrate and between the ultraviolet LED and the optical device.
According to an embodiment of the present invention, an accommodating space is included between the substrate and the optical device.
According to an embodiment of the present invention, the silicon dioxide is amorphous.
According to an embodiment of the present invention, the junction between the bottom and a side surface of the optical device is a non-perpendicular junction.
According to an embodiment of the present invention, the height of the sealing material is less than the height of the reflective ring.
According to an embodiment of the present invention, the sealing material includes a gel.
According to an embodiment of the present invention, the metal film includes aluminum.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1A shows a structural schematic diagram of the package structure according to the present invention;
FIG. 1B shows a structural schematic diagram of the bottom of the optical device according to the present invention; and
FIG. 2 shows the optical paths of the ultraviolet light of the package structure according to the present invention.
 DETAILED DESCRIPTION
In order to make the structure and characteristics as well as the effectiveness of the present invention to be further understood and recognized, the detailed description of the present invention is provided as follows along with embodiments and accompanying figures.
The present embodiment provides a package structure for ultraviolet LED, which comprises an optical device. The optical device includes amorphous silicon dioxide. The ultraviolet light with a wavelength between 200 and 400 nm is able to penetrate the optical device, ensuring superior transmittivity and a broader wavelength range for ultraviolet-light penetration. In addition, by including a reflective ring and a metal film, the aging problem on the sealing material caused by ultraviolet-light illumination can be solved and the light-emitting efficiency of the ultraviolet LED can be enhanced. Accordingly, the limitations on planar packaging ultraviolet LEDs can be overcome.
Please refer to FIGS. 1A and 1B, which show structural schematic diagrams of the package structure and the bottom of the optical device according to the present invention. As shown in the figures, the package structure according to the present invention comprises a substrate 100, an ultraviolet LED 200, and an optical device 300. The ultraviolet LED 200 is disposed on the substrate 100. The optical device 300 includes a recess 310, which faces and hoods the substrate 100, forming an accommodating space 400. Furthermore, a gel 350 is used for connecting the bottom of the optical device 320 and the substrate 100, so that the ultraviolet LED 200 is located between the substrate 100 and the optical device 300.
According to the above embodiment, the optical device 300 is high-purity amorphous silicon dioxide. The ultraviolet light with a wavelength between 200 and 400 nm is able to penetrate the optical device 300 with transmittivity over 80%. In addition, the optical device 300 overcomes the limitation on direct press-molding of quartz, and forming the structure of the recess 310 and the accommodating space 400. The optical device 300 can hood the substrate 100 directly for replacing fluorescent gel packaging and isolating the influence of the external environment on the ultraviolet LED 200. Besides, the recess 310 of the optical device 300 hoods the substrate 100 directly, which is distinct from the general SMD structure having a reflective hood. Thereby, the light-emitting angle of the ultraviolet LED 200 can be increased.
According to the present embodiment, a reflective ring 110 is further disposed on the substrate 100 and between the ultraviolet LED 200 and the optical device 300. In addition, a guiding hole 120 and a metal circuit board 130 are disposed on the substrate 100 and between the reflective ring 110 and the ultraviolet LED 200. Moreover, a gold wire 140 is used for connecting the ultraviolet LED 200 to the metal circuit board 130. A metal film 340 is disposed on the bottom of the optical device 320. The junction between the bottom of the optical device 320 and a side surface is a non-perpendicular junction 330.
Please refer to FIGS. 1A and 1B. Packaging an ultraviolet LED device includes three steps: die fixing, wire bonding, and packaging. First, the ultraviolet LED 200 is placed on the substrate 100 and connected to the metal circuit board 130 using the gold wire 140. Next, the optical device 300 is placed on the substrate 100. The reflective ring 110 disposed on the substrate 100 can be used as an alignment mark for placing the optical device 300. Then, the optical device 300 is pressed and uses the gel 350 for gluing, so that the bottom of the optical device 320 is attached tightly to the substrate 100. Because the junction between the bottom of the optical device 320 and a side surface is the non-perpendicular junction 330, during the attachment process, the gel 350 will not spill into the accommodating space 400 but be squeezed outwards. Besides, the reflective ring 110 disposed between the bottom of the optical device 320 and the ultraviolet LED 200 can prevent the gel 350 from spilling into the accommodating space 400 as well.
Please refer to FIG. 2, which shows the optical paths of the ultraviolet light of the package structure according to the present invention. As shown in the figure, the present invention ensures the reliability of the gel 350 in the package structure through the following methods. First, include the metal film 340 on the bottom of the optical device 320. The metal film 340 includes aluminum, which is the only thin-film material capable of reflecting short wavelengths. It has high reflectivity for ultraviolet light; it also adheres tightly to optical devices. The ultraviolet light B illuminates the optical device 300 and forms the reflection light B′. The reflection light B′ then illuminates the metal film 340 and is reflected to form the reflection light C. Thereby, the gel 350 can be free from the illumination of ultraviolet light and thus avoiding aging. Meanwhile, the light emission of the ultraviolet LED can be increased as well. The other method is to include the reflective ring 110 between the ultraviolet LED 200 and the optical device 300. Because the height of the reflective ring 110 is greater than the height of the gel 350, as the ultraviolet light A illuminates the reflective ring 110, the reflection light A′ will be formed, and hence blocking the ultraviolet light from illuminating laterally to the gel 350. Accordingly, prevention of material aging can be achieved.
To sum up, the package structure for ultraviolet LED according to the present invention adopts the amorphous silicon dioxide as the optical device, which can be penetrated by the ultraviolet light having wavelength between 200 and 400 nm with transmittivity above 80%. Thereby, the light-emitting performance of ultraviolet LEDs can be improved. In addition, the limitations on press-molding of quartz according to the prior art owing to the high melting point of quartz is overcome for disposing the recess structure, which increase the light-emitting angle of the ultraviolet LED as well as the light emission. Moreover, the package structure according to the present invention blocks ultraviolet light from illuminating the gel directly by using the metal film and the reflective ring. Hence, the purpose of protecting materials from aging can be achieved. This solves the problem of insufficient reliability in the sealing materials used in packaging ultraviolet LED devices planarly according to the prior art. The present invention overcomes the limitations on packaging ultraviolet LED devices planarly while keeping the advantages of planar packages. Thereby, it can replace the high-cost TO-scan package structure. Consequently, the applications of backend processes for ultraviolet LEDs can be extended
Accordingly, the present invention conforms to the legal requirements owing to its novelty, nonobviousness, and utility. However, the foregoing description is only embodiments of the present invention, not used to limit the scope and range of the present invention. Those equivalent changes or modifications made according to the shape, structure, feature, or spirit described in the claims of the present invention are included in the appended claims of the present invention.

Claims (18)

What is claimed is:
1. A package structure for an ultraviolet light-emitting diode, comprising:
a substrate;
an ultraviolet light-emitting diode emitting light with a minimum wavelength of 200 nanometers and disposed on said substrate;
an optical device including a silicon dioxide material, the optical device formed with a recess covering said ultraviolet light-emitting diode and hooding said substrate, and the transmittivity of the ultraviolet light emitted by said ultraviolet light-emitting diode through said optical device being greater than 80%; and
a metal film is disposed on a bottom surface of said optical device, said bottom surface of said optical device forming an obtuse angle between said bottom surface of said optical device and a side surface of said optical device defining a wedge shaped contour for containing a sealing material;
wherein said ultraviolet light-emitting diode located between said substrate and said optical device.
2. The packaging structure of claim 1, and further comprising a reflective ring on said substrate and disposed between said ultraviolet light-emitting diode and said optical device.
3. The packaging structure of claim 1, and further comprising an accommodating space between said substrate and said optical device.
4. The packaging structure of claim 1, wherein said silicon dioxide is amorphous.
5. The packaging structure of claim 2, wherein said optical device is connected to said substrate using said sealing material.
6. The packaging structure of claim 5, wherein said sealing material includes a gel.
7. The packaging structure of claim 5, wherein a height of said sealing material is less than a height of said reflective ring.
8. The packaging structure of claim 1, wherein said metal film includes aluminum.
9. A package structure for an ultraviolet light-emitting diode, comprising:
a substrate;
an ultraviolet light-emitting diode disposed on said substrate; and
an optical device including a recess covering said ultraviolet light-emitting diode and hooding said substrate, and the transmittivity of the ultraviolet light emitted by said ultraviolet light-emitting diode through said optical device being greater than 80%, and a metal film on a bottom surface of said optical device connected to said substrate using a sealing material, said bottom surface of said optical device forming an obtuse angle between said bottom surface of said optical device and a side surface of said optical device defining a wedge shaped contour for containing a sealing material.
10. The packaging structure of claim 9, and further comprising a reflective ring on said substrate and disposed between said ultraviolet light-emitting diode and said optical device.
11. The packaging structure of claim 9, and further comprising an accommodating space between said substrate and said optical device.
12. The packaging structure of claim 9, wherein said optical device includes silicon dioxide.
13. The packaging structure of claim 12, wherein said silicon dioxide is amorphous.
14. The packaging structure of claim 9, wherein said ultraviolet light-emitting diode emits light with a wavelength ranging between 200 and 400 nanometers.
15. The packaging structure of claim 9, wherein the transmittivity of the ultraviolet light emitted by said ultraviolet light-emitting diode through said optical device is greater than 80%.
16. The packaging structure of claim 10, wherein a height of said sealing material is less than a height of said reflective ring.
17. The packaging structure of claim 9, wherein said sealing material includes a gel.
18. The packaging structure of claim 9, wherein said metal film includes aluminum.
US15/234,176 2016-08-11 2016-08-11 Package structure for ultraviolet light-emitting diode Active US10153412B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/234,176 US10153412B2 (en) 2016-08-11 2016-08-11 Package structure for ultraviolet light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/234,176 US10153412B2 (en) 2016-08-11 2016-08-11 Package structure for ultraviolet light-emitting diode

Publications (2)

Publication Number Publication Date
US20180047881A1 US20180047881A1 (en) 2018-02-15
US10153412B2 true US10153412B2 (en) 2018-12-11

Family

ID=61159399

Family Applications (1)

Application Number Title Priority Date Filing Date
US15/234,176 Active US10153412B2 (en) 2016-08-11 2016-08-11 Package structure for ultraviolet light-emitting diode

Country Status (1)

Country Link
US (1) US10153412B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110464856A (en) * 2019-09-16 2019-11-19 北京中科优唯科技有限公司 A kind of deep ultraviolet LED dodging device
CN111956828A (en) * 2020-09-15 2020-11-20 深圳市祐富光裕电子有限公司 Seamless concatenation sterilization ring

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090015138A1 (en) * 2007-07-12 2009-01-15 Koito Manufacturing Co., Ltd. Light emitting device
US20090267484A1 (en) * 2006-06-27 2009-10-29 Mitsubishi Chemical Corporation Illuminating device
US20100123156A1 (en) * 2008-11-18 2010-05-20 Seoul Semiconductor Co., Ltd. Light emitting device
US20130070441A1 (en) * 2011-09-20 2013-03-21 Yon Tae MOON Light emitting device package and lighting system including the same
US20140231850A1 (en) * 2013-02-19 2014-08-21 Michael A. Tischler Engineered-phosphor led packages and related methods
US20140367718A1 (en) * 2012-03-05 2014-12-18 Seoul Viosys Co., Ltd. Light-emitting device and method of manufacturing the same
US20160005931A1 (en) * 2013-02-28 2016-01-07 Seoul Semiconductor Co., Ltd. Light emitting module
US20160260877A1 (en) * 2015-03-04 2016-09-08 Lite-On Opto Technology (Changzhou) Co., Ltd. Led package structure and manufacturing method thereof
US20170084799A1 (en) * 2014-06-02 2017-03-23 3M Innovative Properties Company Led with remote phosphor and shell reflector

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090267484A1 (en) * 2006-06-27 2009-10-29 Mitsubishi Chemical Corporation Illuminating device
US20090015138A1 (en) * 2007-07-12 2009-01-15 Koito Manufacturing Co., Ltd. Light emitting device
US20100123156A1 (en) * 2008-11-18 2010-05-20 Seoul Semiconductor Co., Ltd. Light emitting device
US20130070441A1 (en) * 2011-09-20 2013-03-21 Yon Tae MOON Light emitting device package and lighting system including the same
US20140367718A1 (en) * 2012-03-05 2014-12-18 Seoul Viosys Co., Ltd. Light-emitting device and method of manufacturing the same
US20140231850A1 (en) * 2013-02-19 2014-08-21 Michael A. Tischler Engineered-phosphor led packages and related methods
US20160005931A1 (en) * 2013-02-28 2016-01-07 Seoul Semiconductor Co., Ltd. Light emitting module
US20170084799A1 (en) * 2014-06-02 2017-03-23 3M Innovative Properties Company Led with remote phosphor and shell reflector
US20160260877A1 (en) * 2015-03-04 2016-09-08 Lite-On Opto Technology (Changzhou) Co., Ltd. Led package structure and manufacturing method thereof

Also Published As

Publication number Publication date
US20180047881A1 (en) 2018-02-15

Similar Documents

Publication Publication Date Title
US9546762B2 (en) LED assembly
EP3553368B1 (en) Lighting device and lamp for automobile including same
TWM318795U (en) Package structure
CN104517947A (en) Light emitting diode assembly and manufacturing method thereof
JP2016103636A (en) Light emitting element package
CN102074642B (en) Light emitting device package, lighting module and illuminator
JP6539690B2 (en) Package structure of UV light emitting diode parts
CN105322077A (en) Light emitting diode packaging structure
US10153412B2 (en) Package structure for ultraviolet light-emitting diode
CN104167411A (en) LED array structure
TWI394298B (en) Semiconductor light emitting device package structure
WO2016026405A1 (en) Liquid-cooled lamp
KR20170043126A (en) High power led package and method of the same improved color coordinates and thermal conductivity
CN201820793U (en) LED (light emitting diode) encapsulating structure
TW201426966A (en) LED light bar
CN103165590A (en) Light emitting diode (LED) and down-straight type backlight source
CN202549840U (en) Multi-wafer integration type white-light light emitting diode (LED) packaging structure
CN108321278A (en) A kind of LED packagings
TW201407830A (en) Light emitting diode package structure
TW201316565A (en) Packaging method of light emitting diode with glue wall
CN102593308A (en) Light emitting diode package structure
KR102050057B1 (en) Light Emitting Device Package
KR102142718B1 (en) Light emitting device and light apparatus having thereof
KR20150145546A (en) Light emitting device package and lighting system
CN106471631B (en) Light emitting device package

Legal Events

Date Code Title Description
AS Assignment

Owner name: INSTITUTE OF NUCLEAR ENERGY RESEARCH, ATOMIC ENERG

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SHIH, ZUN-HAO;YANG, KAI-HSIANG;CHANG, JIA-RUEI;AND OTHERS;REEL/FRAME:039405/0715

Effective date: 20160720

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4