TWM641554U - Field-effect transistor element with high heat dissipation - Google Patents

Abstract

A field-effect transistor element with high heat dissipation performance includes a semiconductor substrate including a heat dissipation through hole, a field-effect transistor formed on the semiconductor substrate and including a semiconductor unit and an electrode unit, and an insulating layer covering the field-effect transistor. The electrode unit has a source electrode, a drain electrode and a gate electrode which can pass through the insulating layer and are electrically connected to the outside respectively. Wherein, the diameter of the heat dissipation through hole ranges from 5 μm to 15 μm and the position corresponds to the projected position of the source electrode on the semiconductor substrate. By forming the heat dissipation through hole with a specific aperture size on the semiconductor substrate corresponding to the position of the source electrode, the thermal energy generated by the source electrode can be maintained while maintaining the original size of the high heat dissipation field effect transistor element. Rapid discharge through the heat dissipation through hole has a good heat dissipation effect.

Description

High heat dissipation field effect transistor element

The present invention relates to a transistor element, in particular to a field-effect transistor element with high heat dissipation.

Referring to Fig. 1, a kind of existing field effect transistor element, and comprises a semiconductor substrate 91, a plurality of field effect transistors 92 formed on this semiconductor substrate 91, a metal heat conducting layer 93 covering these field effect transistors 92, and an insulating layer 94 covering the metal heat conducting layer 93 . Wherein, the semiconductor substrate 91 includes two heat dissipation holes 910 located at opposite ends for heat dissipation, and each field effect transistor 92 includes a source 921 (code-named S) and a gate electrode 922 (code-named G). and a drain 923 (code-named D), the metal heat conduction layer 93 is connected to the sources 921 and is used for transferring heat generated by the sources 921 to the heat dissipation through holes 910 . However, since the distance between each source 921 and the heat dissipation through holes 910 is different, the source 921 that is farther away from the heat dissipation through holes 910 has the problem of poor heat dissipation due to the longer distance required for heat transfer. .

However, although additional through holes can be formed in the semiconductor substrate corresponding to the positions of the source electrodes 921 to help heat dissipation and improve the above-mentioned problems, the diameter of the through holes formed on the semiconductor substrate is currently more than 20 μm, so in order To allow each source 921 to have a corresponding through hole to help heat dissipation and maintain the original function of the field effect transistor, it is necessary to enlarge the overall size of the field effect transistor in order not to damage the field. The original effect of the field effect transistor element, which limits the application of the field effect transistor element in miniaturization.

Based on the above, how to improve the heat dissipation effect of the field effect transistor element without changing the size of the existing field effect transistor element is a problem faced by the industry at present.

Therefore, the first purpose of the present invention is to provide a high heat dissipation field effect transistor element that does not need to be enlarged in size and has a good heat dissipation effect.

Therefore, the novel high heat dissipation field effect transistor element includes a semiconductor substrate, a field effect transistor and an insulating layer.

The semiconductor substrate includes a first surface and a second surface opposite to the first surface.

The field effect transistor is formed on the semiconductor substrate. The field effect transistor includes a semiconductor unit formed on the first surface of the semiconductor substrate and an electrode unit formed on the semiconductor unit. The electrode unit has a source electrode, a drain electrode and a gate electrode connected to the semiconductor unit.

The insulating layer covers the field-effect transistor and is used for electrically connecting the source electrode, the drain electrode and the gate electrode to the outside respectively.

Wherein, the semiconductor substrate further includes a heat dissipation through hole extending from the first surface to the second surface, the position of the heat dissipation through hole corresponds to the projected position of the source electrode of the field effect transistor on the semiconductor substrate, In addition, the diameter of the heat dissipation through hole ranges from 5 μm to 15 μm.

Moreover, the second purpose of the present invention is to provide a high heat dissipation field effect transistor element that does not need to be enlarged in size and has good heat dissipation effect.

Therefore, the novel high heat dissipation field effect transistor element includes a semiconductor substrate, a plurality of field effect transistors and an insulating layer.

The semiconductor substrate includes a first surface and a second surface opposite to the first surface.

A plurality of field effect transistors are formed on the semiconductor substrate. Each field effect transistor includes a semiconductor unit formed on the first surface of the semiconductor substrate and an electrode unit formed on the semiconductor unit. The electrode unit has a source electrode, a drain electrode and a gate electrode connected to the semiconductor unit.

The insulating layer covers the field effect transistors and is used for electrically connecting the source electrodes, the drain electrodes and the gate electrodes to the outside respectively.

Wherein, the semiconductor substrate further includes a plurality of heat dissipation through holes extending from the first surface to the second surface, and the positions of the heat dissipation through holes correspond to the positions of the source electrodes of the field effect transistors on the semiconductor substrate. The projection position, and the diameter of each heat dissipation through hole ranges from 5 μm to 15 μm.

The effect of the present invention is that by forming the heat dissipation through hole corresponding to the position of the source electrode of the field effect transistor in the semiconductor substrate, the heat energy generated at the source can be quickly discharged through the heat dissipation through hole , thereby effectively improving the heat dissipation effect of the high heat dissipation field effect transistor element, especially, with the design of the aperture size of the heat dissipation through hole, the high heat dissipation field effect transistor element can also maintain the original size At the same time, it has good heat dissipation effect.

Referring to FIGS. 2 to 4 , a first embodiment of the novel high heat dissipation field effect transistor device includes a semiconductor substrate 1 , a plurality of field effect transistors 2 , an insulating layer 3 and a conductive layer 4 .

2, the semiconductor substrate 1 includes a first surface 11, a second surface 12 opposite to the first surface 11, and a plurality of heat dissipation through holes extending from the first surface 11 to the second surface 12. 13. In the first embodiment, the diameters of the heat dissipation through holes 13 from the end adjacent to the first surface 11 to the end adjacent to the second surface 12 are all equal in size, and the diameter of each heat dissipation through hole 13 ranges from 5 μm to 15 μm. It should be noted that the actual form of the heat dissipation through holes 13 is not limited to the above. Referring to FIG. The first surface 11 gradually increases toward the second surface 12 , and the diameter of each heat dissipation through hole 13 adjacent to the first surface 11 ranges from 5 μm to 15 μm. The semiconductor substrate 1 is selected from semiconductor materials such as gallium arsenide (GaAs), gallium nitride (GaN), silicon carbide (SiC), silicon (Si) or sapphire (Sapphire). In the first embodiment, the semiconductor substrate 1 is illustrated by taking gallium arsenide as an example.

The field effect transistors 2 are formed on the semiconductor substrate 1, and each field effect transistor 2 includes a semiconductor unit 21 formed on the first surface 11 of the semiconductor substrate 1 and an electrode formed on the semiconductor unit 21 Unit 22.

The field effect transistors 2 are, for example, high electron mobility transistors (HEMT for short). The semiconductor unit 21 of each field effect transistor 2 can be selected from III-V semiconductor materials. The Group III-V semiconductor materials are, for example, gallium arsenide (GaAs), gallium nitride (GaN) or aluminum gallium nitride (AlGaN). In the first embodiment, the semiconductor unit 21 is illustrated by taking a HEMT structure and a GaAs-based semiconductor material as an example. It should be noted that, in the field effect transistors 2, the semiconductor units 21 can be integrally connected or arranged at intervals. In the first embodiment, the semiconductor units 21 are described as an integral connection as an example. .

In more detail, in the first embodiment, the semiconductor unit 21 is illustrated as including a GaAs buffer layer 211 and an AlGaAs barrier layer 212 formed upwardly from the semiconductor substrate 1 as an example, but in actual implementation It is not limited to this. A heterojunction is formed between the GaAs buffer layer 211 and the AlGaAs barrier layer 212 , and a two-dimensional electron gas is formed on a side of the GaAs buffer layer 211 close to the heterojunction. Since the detailed structure of the HEMT and the combination of related materials are well known in the art and are not the focus of the present invention, no further description is given here.

In each field effect transistor 2, the electrode unit 22 is formed on the surface of the semiconductor unit 21, and has a source electrode 221, a drain electrode 222 and a gate electrode 223 disposed on the semiconductor unit 21. .

Referring to FIG. 4, in the electrode unit 22, the source electrode 221 is set corresponding to one of the heat dissipation through holes 13 and located above the heat dissipation through hole 13, and the source electrode 221 and the heat dissipation through hole 13 are arranged. The drain electrodes 222 are arranged at intervals, and the gate electrode 223 is located between the source electrode 221 and the drain electrode 222 , thereby forming a source (S), a gate (G) and a drain (D) respectively. The source electrode 221 has an ohmic contact pad 2211 disposed on the semiconductor unit 21, a source electrode layer 2212 formed on the ohmic contact pad 2211, and a source electrode formed on the source electrode layer 2212. The conductive connection layer 2213 . The drain electrode 222 has an ohmic contact pad 2221 disposed on the semiconductor unit 21, a drain electrode layer 2222 formed on the ohmic contact pad 2221, and a drain electrode formed on the drain electrode layer 2222. The conductive connection layer 2223 . The gate electrode 223 is connected to a gate conductive connection layer (not shown) disposed outside the source electrode 221 , the drain electrode 222 and the gate electrode 223 .

The ohmic contact pad 2211 of the source electrode 221, the source electrode layer 2212, the source conductive connection layer 2213, the ohmic contact pad 2221 of the drain electrode 222, the drain electrode layer 2222, the drain conductive The connection layer 2223 and the gate electrode 223 can be selected from metals or alloy metals with good conductivity. The ohmic contact pad 2211 of the source electrode 221 and the ohmic contact pad 2221 of the drain electrode 222 have a single-layer metal layer structure. The source electrode layer 2212 , the source conductive connection layer 2213 , the drain electrode layer 2222 , the drain conductive connection layer 2223 and the gate electrode 223 can be a single-layer metal layer structure or a multi-layer metal layer structure. In the first embodiment, the ohmic contact pad 2211 of the source electrode 221 and the ohmic contact pad 2221 of the drain electrode 222 are single-layer metal layer structures respectively made of gold, germanium or nickel. The source electrode layer 2212 and the drain electrode layer 2222 are multilayer metal layer structures made of titanium, platinum and gold respectively, and the gate electrode 223 is a multilayer metal layer structure made of titanium, platinum and gold. For the layer structure, the source conductive connection layer 2213 and the drain conductive connection layer 2223 are respectively described as a multi-layer metal layer structure composed of titanium, platinum and gold as an example, but the actual implementation is not limited thereto. Since the relevant structures, materials and manufacturing processes of the aforementioned field effect transistors 2 are known in the technical field, no more details are given here. It should be noted that the number of these field effect transistors 2 is not limited to a plurality, and the number can be adjusted according to usage requirements. For example, the high heat dissipation field effect transistor element can also only include one field effect transistor. 2.

Referring to FIG. 2 and FIG. 4 , the insulating layer 3 covers the field effect transistors 2 and electrically isolates the source electrodes 221 , the drain electrodes 222 and the gate electrodes 223 from each other. The source electrodes 221 and the drain electrodes 222 can be respectively electrically connected to the outside by passing through the insulating layer 3 through the source conductive connection layers 2213 and the drain conductive connection layers 2223 , and the The gate electrodes 223 can be electrically connected to the outside through a plurality of gate conductive connection layers (not shown) connected to the gate electrodes 223 and passing through the insulating layer 3 . The insulating layer 3 can be selected from inorganic insulating materials such as silicon dioxide, silicon oxide, silicon nitride, etc., and polyimide, polyparaphenylene benzobisoxazole (polyparaphenylene benzobisoxazole, PBO for short), benzocyclidine, etc. Benzene (benzocyclobutadiene) and other organic insulating materials. In the first embodiment, the insulating layer 3 is illustrated using poly-p-phenylenebenzobisoxazole as an example.

Referring to FIG. 2 , the conductive layer 4 covers the second surface 12 of the semiconductor substrate 1 and extends to the heat dissipation vias 13 , and is in contact with the source electrodes 221 . More specifically, the heat dissipation through holes 13 are respectively defined by a plurality of surrounding walls in the semiconductor substrate 1, and the phrase "the conductive layer 4 extends to the heat dissipation through holes 13" means that the conductive layer 4 covers on the surface of the surrounding walls. The conductive layer 4 can be made of conductive materials such as gold or copper.

In the first embodiment, the heat dissipation vias 13 are formed in the semiconductor substrate 1 corresponding to the positions of the source electrodes 221 of the field effect transistors 2, so that the field effect transistors 2. When the external voltage is applied, the heat energy generated at the sources (S) can be quickly discharged through the heat dissipation through holes 13, thereby effectively improving the heat dissipation effect of the high heat dissipation field effect transistor element. In addition, since the heat dissipation through holes 13 are formed corresponding to the positions of the source electrodes 221 of the field effect transistors 2, the heat conduction distances of the source electrodes 221 of the field effect transistors 2 are almost the same. There will be no problem of poor heat dissipation caused by different heat conduction distances.

On the other hand, by controlling the diameter range of the heat dissipation through holes 13 to 5 μm to 15 μm, the present invention can form the heat dissipation through holes 13 without changing the size of the high heat dissipation field effect transistor element, thereby The small size of the high heat dissipation field effect transistor element can be maintained in response to the miniaturization requirements of various electronic products today, and at the same time, it has the advantages of good heat dissipation effect.

Referring to FIG. 5 , a second embodiment of the novel high heat dissipation field effect transistor element. The difference between the second embodiment and the first embodiment is that: the high heat dissipation field effect transistor 2 element also includes a source connection layer 5 and a heat conduction layer 6 sequentially arranged on the insulating layer 3, also That is to say, the source connection layer 5 is interposed between the insulating layer 3 and the heat conducting layer 6 .

The source connection layer 5 is disposed on the surface of the insulating layer 3 and connected to the source conductive connection layers 2213 passing through the insulating layer 3 . The source connection layer 5 can be selected from metals or metal alloys with good conductivity, and can be a single-layer metal layer structure or a multi-layer metal layer structure. In the second embodiment, the source connecting layer 5 is illustrated by taking a multilayer metal layer structure made of titanium, platinum or gold as an example.

The heat conduction layer 6 directly covers the surface of the source connection layer 5 , and the thickness of the heat conduction layer 6 is not less than 3 μm, and the side opposite to the source connection layer 5 is exposed to the outside. The heat conduction layer 6 can be selected from conductive materials with good heat dissipation such as gold or copper, and the heat conduction layer 6 and the source connection layer 5 can be made of the same or different materials. In the second embodiment, the heat conducting layer 6 is illustrated by taking copper as an example.

In the second embodiment, by directly covering the surface of the source connection layer 5 with a thermally conductive layer 6 with a thickness T of not less than 3 μm, the thickness T of the thermally conductive layer 6 is controlled to be not less than 3 μm to improve the thermal conductivity of the thermally conductive layer 6. Heat dissipation, so that when the field effect transistors 2 are subjected to an external voltage, the heat energy generated at the sources (S) can be transferred to the heat conduction layer 6 through the source connection layer 5, so the heat dissipation The existence of the through hole 13 can quickly discharge the heat energy generated by the field effect transistors 2 , and further improve the heat dissipation effect of the high heat dissipation field effect transistor element more effectively.

Referring to Fig. 5 again, in other embodiments of the novel high heat dissipation field effect transistor element, it is also possible to further form through holes for heat dissipation at the opposite ends of the semiconductor substrate 1 through the same as the existing field effect transistor element. 14 to discharge the heat energy generated by the source electrodes 221.

Referring to FIG. 6 , a third embodiment of the novel high heat dissipation field effect transistor element. The difference between the third embodiment and the second embodiment is that the high heat dissipation field effect transistor 2 element can also not be provided with the source connection layer 5, but directly forms a thickness T on the insulating layer 3. The heat conduction layer 6 is less than 3 μm and directly connected to the source conductive connection layers 2213 , and the side of the heat conduction layer 6 opposite to the source electrodes 221 is exposed to the outside.

In the third embodiment, by directly covering the heat conduction layer 6 with a thickness T of not less than 3 μm on the insulating layer 3, the heat dissipation of the heat conduction layer 6 is improved by controlling the thickness T of the heat conduction layer 6 to be not less than 3 μm , so that when the field effect transistors 2 are subjected to an external voltage, the heat energy generated at the sources (S) can be directly conducted by the heat conduction layer 6, so that the presence of the heat dissipation through holes 13 can be more The heat energy generated by the field effect transistors 2 can be discharged quickly, and the heat dissipation effect of the high heat dissipation field effect transistor elements can be improved more effectively.

In summary, the novel high heat dissipation field effect transistor device forms the heat dissipation through holes 13 corresponding to the positions of the source electrodes 221 of the field effect transistors 2 in the semiconductor substrate 1, thereby The heat energy generated at the sources (S) can be quickly discharged through the heat dissipation through holes 13, thereby effectively improving the heat dissipation effect of the high heat dissipation field effect transistor element, and at the same time, the heat dissipation through holes 13 can also To avoid the problem of uneven heat dissipation caused by the long heat conduction distance, in addition, with the design of the aperture size of the heat dissipation through holes 13, the high heat dissipation field effect transistor element can also maintain the original size at the same time. It has a good heat dissipation effect, therefore, it can indeed achieve the purpose of the present invention.

But the above-mentioned ones are only embodiments of the present invention, and should not limit the scope of implementation of the present invention with this. All simple equivalent changes and modifications made according to the patent scope of the present application and the content of the patent specification are still within the scope of the present invention. Within the scope covered by this patent.

1: Semiconductor substrate 11: First surface 12: Second surface 13: Heat dissipation through hole 14: perforation 2: field effect transistor 21: Semiconductor unit 211: GaAs buffer layer 212: AlGaAs barrier layer 22: Electrode unit 221: source electrode 2211: Ohmic Contact Pad 2212: source electrode layer 2213: Source conductive connection layer 222: drain electrode 2221: Ohmic Contact Pad 2222: drain electrode layer 2223: drain conductive connection layer 223: gate electrode 3: Insulation layer 4: Conductive layer 5: Source connection layer 6: Thermal conduction layer 91: Semiconductor substrate 910: thermal perforation 92:Field Effect Transistor 921: source 922: gate 923: drain 93: metal heat conduction layer 94: insulation layer

Other features and functions of the present invention will be clearly presented in the implementation manner with reference to the drawings, wherein: Fig. 1 is a schematic diagram of a side view, illustrating an existing field-effect transistor element; Fig. 2 is a schematic side view illustrating the first embodiment of the novel high heat dissipation field effect transistor element; FIG. 3 is a schematic side view illustrating variations of the plurality of heat dissipation through holes in the first embodiment; Fig. 4 is a partially enlarged schematic diagram of a side view, illustrating the first embodiment; Fig. 5 is a schematic side view illustrating a second embodiment of the novel high heat dissipation field effect transistor element; and FIG. 6 is a schematic side view illustrating a third embodiment of the novel high heat dissipation field effect transistor device.

1: Semiconductor substrate

11: First surface

12: Second surface

13: Heat dissipation through hole

2: field effect transistor

21: Semiconductor unit

22: Electrode unit

221: source electrode

222: drain electrode

223: gate electrode

3: Insulation layer

4: Conductive layer

Claims (13)

A field effect transistor element with high heat dissipation, comprising: A semiconductor substrate including a first surface and a second surface opposite to the first surface; A field effect transistor is formed on the semiconductor substrate, the field effect transistor includes a semiconductor unit formed on the first surface of the semiconductor substrate and an electrode unit formed on the semiconductor unit, the electrode unit has a a source electrode, a drain electrode and a gate electrode; and an insulating layer covering the field-effect transistor and used for electrically connecting the source electrode, the drain electrode and the gate electrode to the outside; Wherein, the semiconductor substrate further includes a heat dissipation through hole extending from the first surface to the second surface, the position of the heat dissipation through hole corresponds to the projected position of the source electrode of the field effect transistor on the semiconductor substrate, In addition, the diameter of the heat dissipation through hole ranges from 5 μm to 15 μm. The high heat dissipation field effect transistor device as claimed in Claim 1 further comprises a heat conduction layer connected to the source electrode, the thickness of the heat conduction layer is not less than 3 μm and the side opposite to the source electrode is exposed to the outside. The high heat dissipation field effect transistor element as described in Claim 2 further comprises a source connection layer between the insulating layer and the heat conduction layer, the source connection layer is directly connected to the source electrode, and the The heat conduction layer directly covers the surface of the source connection layer. The high heat dissipation field effect transistor device as claimed in claim 2, wherein the heat conduction layer is directly connected to the source electrode. The high heat dissipation field effect transistor element according to claim 1, wherein the diameter of the heat dissipation through hole gradually increases from the first surface to the second surface, and the heat dissipation through hole is adjacent to the first surface The pore size at one end ranges from 5 μm to 15 μm. The high heat dissipation field effect transistor device as claimed in claim 1 further comprises a conductive layer covering the second surface of the semiconductor substrate and extending to the heat dissipation through hole. A field effect transistor element with high heat dissipation, comprising: A semiconductor substrate including a first surface and a second surface opposite to the first surface; A plurality of field effect transistors are formed on the semiconductor substrate, and each field effect transistor includes a semiconductor unit formed on the first surface of the semiconductor substrate and an electrode unit formed on the semiconductor unit, and the electrode unit has a connection a source electrode, a drain electrode and a gate electrode of the semiconductor unit; and an insulating layer covering the field-effect transistors and used for electrically connecting the source electrodes, the drain electrodes and the gate electrodes to the outside respectively; Wherein, the semiconductor substrate further includes a plurality of heat dissipation through holes extending from the first surface to the second surface, and the positions of the heat dissipation through holes correspond to the positions of the source electrodes of the field effect transistors on the semiconductor substrate. The projection position, and the diameter of each heat dissipation through hole ranges from 5 μm to 15 μm. The high heat dissipation field effect transistor element as described in Claim 7, further comprising a heat conduction layer connected to the source electrodes, the thickness of the heat conduction layer is not less than 3 μm and the side opposite to the source electrodes is exposed to the outside exposed. The high heat dissipation field effect transistor device as claimed in claim 8, further comprising a source connection layer between the insulating layer and the heat conduction layer, the source connection layer is directly connected to the source electrodes, and The heat conduction layer directly covers the surface of the source connection layer. The high heat dissipation field effect transistor device as claimed in claim 8, wherein the heat conduction layer is directly connected to the source electrodes. The high heat dissipation field effect transistor device as claimed in item 7, wherein the diameter of the heat dissipation through holes gradually increases from the first surface to the second surface, and each heat dissipation through hole is adjacent to the first The pore size ranges from 5 μm to 15 μm at one end of the surface. The high heat dissipation field effect transistor device as claimed in claim 7 further comprises a conductive layer covering the second surface of the semiconductor substrate and extending to the heat dissipation through holes. The high heat dissipation field effect transistor device as claimed in claim 7, wherein the semiconductor units of the field effect transistors are integrally connected.

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