TWM457299U - 具高散熱特性之全角度發光元件 - Google Patents
具高散熱特性之全角度發光元件 Download PDFInfo
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- 230000017525 heat dissipation Effects 0.000 title claims description 59
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 25
- 239000007787 solid Substances 0.000 claims description 20
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V17/00—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
- F21V17/10—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening
- F21V17/101—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening permanently, e.g. welding, gluing or riveting
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
- F21V29/76—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
- F21V29/89—Metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
- H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8582—Means for heat extraction or cooling characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8585—Means for heat extraction or cooling being an interconnection
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
Description
本創作係為一種發光元件,特別是指一種可有效地發散發光晶片所產生之熱,且可取得360度全角度光源之具高散熱特性之全角度發光元件。
隨著發光二極體(Light-Emitting Diode,LED)的蓬勃發展,LED儼然成為現代照明領域最熱門之發光元件,然而LED在發光過程中會產生大量的熱,若沒有適當地散熱,溫度升高時不僅會造成亮度下降,若超過攝氏100度時則會造成LED本體及封裝材料的劣化,導致發光晶片毀損以及LED壽命降低。
眾所皆知,熱的傳導可分為熱傳導、熱對流及熱輻射三種方式,固態介質適用於熱傳導,一般而言金屬及陶瓷材料具有較佳的導熱能力,若物體的傳導接觸面積較大的話也有助於熱傳導之效果,熱對流是用於液體介質及氣體介質中,可由高溫處傳遞至低溫處之現象,熱輻射則係透過電磁波形式傳遞熱。因此,於LED照明領域中,增加散熱面積、使用較佳熱傳導的材料、加設散熱塊及搭配風扇,都是目前解決LED散熱問題常用的方法。然而,上述方式仍有其亟待加以改良之處,若以額外加裝散熱塊之方式,因加裝散熱塊和增設風扇係會提高成本的支出,而散熱塊更需透過加工處理,才可將散熱塊與LED發光裝置相互設置成一體,將增加製程所需耗費的時間;再者,增加散熱面積對於整體尺寸設計上有較多限制,且材料的選擇上因應成本考量較為不易。
另外,傳統式LED晶片係以藍寶石基板(sapphire)作為基板,其熱傳導係數僅約為20W/mK,不易將磊晶層所產生的熱快速排出至外部,而傳統LED封裝所使用的係為打線方式,但相對於金屬基板,藍寶石基板
傳導熱之速度相當慢,所以熱源會從金屬線傳導,但散熱效果仍係不佳。
因此,以需求來說,設計一個可將透明基板上之LED晶片所產生之熱有效地排出,且不遮蔽LED晶片所發出之光線,而取得360度全角度光源之具高散熱特性之全角度發光元件,已成市場應用上之一個刻不容緩的議題。
有鑑於上述習知技藝之問題,本創作之目的就是在提供一種具有散熱區段與熱源接觸區段之散熱支架且可有效地傳導發光晶片所產生之熱,並且不阻擋住發光晶片所發出之光線,而取得360度全角度光源之具高散熱特性之全角度發光元件,以解決習知技術之問題。
根據本創作之目的,提出一種具高散熱特性之全角度發光元件,其包含一透明基板、至少一發光晶片、至少一散熱支架及一導熱膠。其中,該透明基板具有一固晶區域,且該固晶區域面積為A;該發光晶片係設於該固晶區域上;該散熱支架係貼抵設於該透明基板上,該散熱支架為片狀體結構並具有一散熱區段與一熱源接觸區段,該散熱支架之該熱源接觸區段係靠抵該固晶區域鄰接設置,其中該熱源接觸區段之面積為B,且3%≦B/A≦26%;及該導熱膠係覆蓋該固晶區域與該散熱支架而使之封合。
另一實施例中,本創作之具高散熱特性之全角度發光元件,更包含:一第一螢光粉層及一第二螢光粉層,其中該第一螢光粉層係設於該透明基板下方,該第二螢光粉層係設於該導熱膠、該發光晶片與該散熱支架上方,進而使該透明基板、該導熱膠、該發光晶片與該散熱支架夾合於該第一螢光粉層及該第二螢光粉層之間。
其中,該發光晶片係為單晶雙光源晶片,而該散熱支架之材質為金屬。
而在上述之具高散熱特性之全角度發光元件中,該導熱膠係為錫膏材質。
為讓本創作之上述和其他目的、特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下。
1、2‧‧‧具高散熱特性之全角度發光元件
11‧‧‧透明基板
110‧‧‧固晶區域
12‧‧‧發光晶片
13‧‧‧散熱支架
131‧‧‧熱源接觸區段
132‧‧‧散熱區段
14‧‧‧導熱膠
15‧‧‧第一螢光粉層
16‧‧‧第二螢光粉層
17‧‧‧第三螢光粉層
第1圖,係為本創作之具高散熱特性之全角度發光元件之第一實施例之第一示意圖。
第2圖,係為本創作之具高散熱特性之全角度發光元件之第一實施例之第二示意圖。
第3圖,係為本創作之具高散熱特性之全角度發光元件之第一實施例之立體圖。
第4圖,係為本創作之具高散熱特性之全角度發光元件之第二實施例之剖面圖。
第5圖,係為本創作之具高散熱特性之全角度發光元件之第三實施例之立體圖。
以下將參照相關圖式,以說明本創作之具高散熱特性之全角度發光元件之實施例,為使便於理解,下述實施例中之相同元件係以相同之符號標示來說明。
請參閱第1圖、第2圖及第3圖,其係為本創作之具高散熱特性之全角度發光元件之第一實施例之第一示意圖、第二示意圖及立體圖。其中,第1圖為本創作之具高散熱特性之全角度發光元件1之正面,而第2圖係為本創作之具高散熱特性之全角度發光元件1之背面,而本創作之具高散熱特性之全角度發光元件1係包含一透明基板11、至少一發光晶片12、至少一散熱支架13以及一導熱膠14。其中,該透明基板11具有一固晶區域110,且該固晶區域110面積為A,並於該固晶區域110上設置該發光晶片12,而該發光晶片12係可為單晶結構,並由一側或兩側發出單色光源。換句話說,藉由本創作之具高散熱特性之全角度發光元件1之該透明基板11結合可發出雙光源之發光晶片12及該散熱支架13,則形成可發出全角度光源之具高散熱特性之全角度發光元件1。
而該散熱支架13係呈片狀體結構並貼抵於該透明基板11上,其具有一散熱區域132與一熱源接觸區段131,該熱源接觸區段131係靠抵該固晶區域110鄰接設置,且該熱源接觸區段131之面積為B。並且,
該固晶區域110之面積與該熱源接觸區段131之面積係符合3%≦B/A≦26%之關係式,而該散熱支架13之材質較佳可為金屬或金屬合金。附帶一提的是,本創作之具高散熱特性之全角度發光元件1之該散熱區域132之長度或面積可依需求而有所調整,在此並不侷限。
因此,如圖所示,藉由該散熱支架13直接貼設該透明基板11上,使該發光晶片12設置於該透明基板11之該固晶區域110上所產生之高溫將會直接導引至該散熱支架13之該熱源接觸區段131再傳至該散熱區段132進行散熱。又,該散熱支架13之該熱源接觸區段131具有如梳體之複數個突出部,該些突出部貼設於該些晶片12周緣,並且該發光晶片12至散熱區段132之間隔距離非常短,因此,其散熱路徑為最短、最直接之路徑,藉以使得本創作之具高散熱特性之全角度發光元件1具有最佳散熱效果之功效。
同時,為加強本創作之具高散熱特性之全角度發光元件1之導熱效果,本創作之具高散熱特性之全角度發光元件1更可於該固晶區域110與該散熱支架13上覆蓋該導熱膠14而使之封合。並且,由於該導熱膠14係為透明狀,故將不會影響該發光晶片12所發出之光線,使本創作之具高散熱特性之全角度發光元件1具有較佳地發光效果。
另外,本創作之具高散熱特性之全角度發光元件1之該散熱支架13之材質係可為金屬材質,而使本創作之該散熱支架13具有較佳之熱傳導效果。
請參閱第4圖,其係為本創作之具高散熱特性之全角度發光元件之第二實施例之剖面圖,如圖所示,與第一實施例不同之處在於本創作之具高散熱特性之全角度發光元件2更包含一第一螢光粉層15及一第二螢光粉層16,以供該發光該些發光晶片12可藉此混光以激發出不同波長之色光。
其中,該第一螢光粉層15係設於該透明基板11之一側,該第二螢光粉層16係設於該導熱膠14、該發光晶片12與該散熱支架13之另一側,進而使該透明基板11、該導熱膠14、該發光晶片12與該散熱支架13夾合於該第一螢光粉層15及該第二螢光粉層16之間。並且,該發光晶
片12係為單晶結構,且係可為單晶雙光源晶片,使其可由上下兩側分別發射出不同波長之光源至該第一螢光粉層15及該第二螢光粉層16,以激發出混光光源。其中,該導熱膠係可為錫膏材質,以促使本創作之具高散熱特性之全角度發光元件2之散熱效能提高。
其中,該透明基板11係由二氧化矽SiO2、磷化鎵GaP、碳化矽SiC、砷化鋁鎵AlGaAs或藍寶石(Sapphire)之其中之一種材料所製成。
請參閱第5圖,其係為本創作之具高散熱特性之全角度發光元件之第三實施例之立體圖,如圖所示,與第二實施例不同之處在於本創作之具高散熱特性之全角度發光元件3更包含一第三螢光粉層17,係設置於該透明基板11、該導熱膠14、該發光晶片12與該散熱支架13之左右兩側,使些微光源由左右兩側射出時,經該第三螢光粉層17得以激發出混光光源。
惟,以上所述者,僅為本創作之具高散熱特性之全角度發光元件之較佳實施例而已,並非用以限定本創作實施之範圍,此等熟習此技術所作出等效或輕易的變化者,在不脫離本創作之精神與範圍下所作之均等變化與修飾,皆應涵蓋於本創作之專利範圍內。
1‧‧‧具高散熱特性之全角度發光元件
11‧‧‧透明基板
110‧‧‧固晶區域
12‧‧‧發光晶片
13‧‧‧散熱支架
131‧‧‧熱源接觸區段
132‧‧‧散熱區段
14‧‧‧導熱膠
Claims (5)
- 一種具高散熱特性之全角度發光元件,其包含:一透明基板,具有一固晶區域,且該固晶區域面積為A;至少一發光晶片,係設於該固晶區域上;至少一散熱支架,係貼抵設於該透明基板上,該散熱支架為片狀體結構並具有一散熱區段與一熱源接觸區段,該散熱支架之該熱源接觸區段係靠抵該固晶區域鄰接設置,其中該熱源接觸區段之面積為B,且3%≦B/A≦26%;及一導熱膠,係覆蓋該固晶區域與該散熱支架而使之封合。
- 如申請專利範圍第1項所述之具高散熱特性之全角度發光元件,更包含:一第一螢光粉層及一第二螢光粉層,其中該第一螢光粉層係設於該透明基板下方,該第二螢光粉層係設於該導熱膠、該發光晶片與該散熱支架上方,進而使該透明基板、該導熱膠、該發光晶片與該散熱支架夾合於該第一螢光粉層及該第二螢光粉層之間。
- 如申請專利範圍第1項所述之具高散熱特性之全角度發光元件,其中該發光晶片係為單晶雙光源晶片。
- 如申請專利範圍第1項所述之具高散熱特性之全角度發光元件,其中該散熱支架之材質為金屬。
- 如申請專利範圍第1至4項其中任一項所述之具高散熱特性之全角度發光元件,其中該導熱膠係為錫膏材質。
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TW102204747U TWM457299U (zh) | 2013-03-15 | 2013-03-15 | 具高散熱特性之全角度發光元件 |
CN201320127619XU CN203218261U (zh) | 2013-03-15 | 2013-03-20 | 具高散热特性的全角度发光组件 |
US13/919,109 US8710723B1 (en) | 2013-03-15 | 2013-06-17 | All-angle light emitting element having high heat dissipating efficiency |
DE202013102680U DE202013102680U1 (de) | 2013-03-15 | 2013-06-20 | Vollwinkel-Leuchtkörper mit hoher Kühlwirkung |
JP2013003716U JP3185958U (ja) | 2013-03-15 | 2013-06-28 | 高い放熱特性を備える全光束発光素子 |
KR2020130006144U KR200476144Y1 (ko) | 2013-03-15 | 2013-07-24 | 높은 방열 특성을 갖는 전각도 발광 소자 |
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EP2942825B1 (en) * | 2014-05-08 | 2020-04-15 | Guan-Jie Luo | White light emitting diode, manufacturing method |
CN105895788A (zh) * | 2014-05-08 | 2016-08-24 | 罗冠杰 | 片式白光发光二极管、制备片式白光发光二极管的方法及封装胶材 |
CN106653990A (zh) * | 2015-11-04 | 2017-05-10 | 涂波 | Led封装的新导热方法 |
CN105674068B (zh) * | 2016-01-11 | 2020-08-25 | 漳州立达信光电子科技有限公司 | Led灯丝封装结构 |
KR102737501B1 (ko) | 2017-01-31 | 2024-12-04 | 삼성전자주식회사 | Led장치 및 이를 이용한 led램프 |
CN108321278A (zh) * | 2018-01-23 | 2018-07-24 | 深圳市璨阳光电有限公司 | 一种led封装器件 |
CN112066273A (zh) * | 2019-06-10 | 2020-12-11 | 宁波天炬光电科技有限公司 | Led光源模组及照明装置 |
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KR200476144Y1 (ko) | 2015-02-02 |
DE202013102680U1 (de) | 2013-07-01 |
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