CN203218261U - 具高散热特性的全角度发光组件 - Google Patents
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 58
- 239000003292 glue Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims 3
- 230000001070 adhesive effect Effects 0.000 claims 3
- 229910000679 solder Inorganic materials 0.000 claims 1
- 238000004020 luminiscence type Methods 0.000 abstract description 58
- 230000005855 radiation Effects 0.000 abstract description 8
- 238000001816 cooling Methods 0.000 description 23
- 239000000843 powder Substances 0.000 description 19
- 230000000694 effects Effects 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Abstract
本实用新型揭露一种具高散热特性的全角度发光组件,其包含一透明基板、至少一发光芯片、至少一散热支架以及一导热胶。透明基板具有一固晶区域,且固晶区域面积为A。发光芯片设于固晶区域上。散热支架贴抵设于透明基板上,散热支架为片状体结构并具有一散热区段与一热源接触区段,散热支架的热源接触区段靠抵固晶区域邻接设置,其中热源接触区段的面积为B,且3%≦B/A≦26%。导热胶覆盖固晶区域与散热支架而使的封合。因此,由散热支架的散热区段与热源接触区段可有效地传导发光芯片所产生的热,并且取得360度全角度光源。
Description
技术领域
本实用新型为一种发光组件,特别是指一种可有效地发散发光芯片所产生的热,且可取得360度全角度光源的具高散热特性的全角度发光组件。
背景技术
随着发光二极管(Light-Emitting Diode,LED)的蓬勃发展,LED俨然成为现代照明领域最热门的发光组件,然而LED在发光过程中会产生大量的热,若没有适当地散热,温度升高时不仅会造成亮度下降,若超过摄氏100度时则会造成LED本体及封装材料的劣化,导致发光芯片毁损以及LED寿命降低。
众所皆知,热的传导可分为热传导、热对流及热辐射三种方式,固态介质适用于热传导,一般而言金属及陶瓷材料具有较佳的导热能力,若物体的传导接触面积较大的话也有助于热传导的效果,热对流是用于液体介质及气体介质中,可由高温处传递至低温处的现象,热辐射则通过电磁波形式传递热。因此,于LED照明领域中,增加散热面积、使用较佳热传导的材料、加设散热块及搭配风扇,都是目前解决LED散热问题常用的方法。然而,上述方式仍有其亟待加以改良之处,若以额外加装散热块的方式,因加装散热块和增设风扇会提高成本的支出,而散热块更需通过加工处理,才可将散热块与LED发光装置相互设置成一体,将增加制程所需耗费的时间;再者,增加散热面积对于整体尺寸设计上有较多限制,且材料的选择上因应成本考虑较为不易。
另外,传统式LED芯片以蓝宝石基板(sapphire)作为基板,其热传导系数仅约为20W/mK,不易将磊晶层所产生的热快速排出至外部,而传统LED封装所使用的为打线方式,但相对于金属基板,蓝宝石基板传导热的速度相当慢,所以热源会从金属线传导,但散热效果仍不佳。
因此,以需求来说,设计一个可将透明基板上的LED芯片所产生的热有效地排出,且不遮蔽LED芯片所发出的光线,而取得360度全角度光源的具高散热特性的全角度发光组件,已成市场应用上的一个刻不容缓的议题。
发明内容
有鉴于上述现有技艺的问题,本实用新型的目的就是在提供一种具有散热区段与热源接触区段的散热支架且可有效地传导发光芯片所产生的热,并且不阻挡住发光芯片所发出的光线,而取得360度全角度光源的具高散热特性的全角度发光组件,以解决现有技术的问题。
根据本实用新型的目的,提出一种具高散热特性的全角度发光组件,其包含一透明基板、至少一发光芯片、至少一散热支架及一导热胶。其中,该透明基板具有一固晶区域,且该固晶区域面积为A;该发光芯片设于该固晶区域上;该散热支架贴抵设于该透明基板上,该散热支架为片状体结构并具有一散热区段与一热源接触区段,该散热支架的该热源接触区段靠抵该固晶区域邻接设置,其中该热源接触区段的面积为B,且3%≦B/A≦26%;及该导热胶覆盖该固晶区域与该散热支架而使之封合。
另一实施例中,本实用新型的具高散热特性的全角度发光组件,更包含:一第一荧光粉层及一第二荧光粉层,其中该第一荧光粉层设于该透明基板下方,该第二荧光粉层设于该导热胶、该发光芯片与该散热支架上方,进而使该透明基板、该导热胶、该发光芯片与该散热支架夹合于该第一荧光粉层及该第二荧光粉层之间。
其中,该发光芯片为单晶双光源芯片,而该散热支架的材质为金属。
而在上述的具高散热特性的全角度发光组件中,该导热胶为锡膏材质。
本实用新型达到的有益技术效果在于,可有效地发散发光芯片所产生的热,且可取得360度全角度光源。
为让本实用新型的上述和其它目的、特征和优点能更明显易懂,下文特举较佳实施例,并配合所附图式,作详细说明如下。
附图说明
图1为本实用新型的具高散热特性的全角度发光组件的第一实施例的第一示意图。
图2为本实用新型的具高散热特性的全角度发光组件的第一实施例的第二示意图。
图3为本实用新型的具高散热特性的全角度发光组件的第一实施例的立体图。
图4为本实用新型的具高散热特性的全角度发光组件的第二实施例的剖面图。
图5为本实用新型的具高散热特性的全角度发光组件的第三实施例的立体图
附图标记说明
1、2-具高散热特性的全角度发光组件;11-透明基板;110-固晶区域;12-发光芯片;13-散热支架;131-热源接触区段;132-散热区段;14-导热胶;15-第一荧光粉层;16-第二荧光粉层;17-第三荧光粉层。
具体实施方式
以下将参照相关图式,以说明本实用新型的具高散热特性的全角度发光组件的实施例,为使便于理解,下述实施例中的相同组件以相同的符号标示来说明。
请参阅图1、图2及图3,其为本实用新型的具高散热特性的全角度发光组件的第一实施例的第一示意图、第二示意图及立体图。其中,图1为本实用新型的具高散热特性的全角度发光组件1的正面,而图2为本实用新型的具高散热特性的全角度发光组件1的背面,而本实用新型的具高散热特性的全角度发光组件1包含一透明基板11、至少一发光芯片12、至少一散热支架13以及一导热胶14。其中,该透明基板11具有一固晶区域110,且该固晶区域110面积为A,并于该固晶区域110上设置该发光芯片12,而该发光芯片12可为单晶结构,并由一侧或两侧发出单色光源。换句话说,由本实用新型的具高散热特性的全角度发光组件1的该透明基板11结合可发出双光源的发光芯片12及该散热支架13,则形成可发出全角度光源的具高散热特性的全角度发光组件1。
而该散热支架13呈片状体结构并贴抵于该透明基板11上,其具有一散热区域132与一热源接触区段131,该热源接触区段131靠抵该固晶区域110邻接设置,且该热源接触区段131的面积为B。并且,该固晶区域110的面积与该热源接触区段131的面积符合3%≦B/A≦26%的关系式,而该散热支架13的材质较佳可为金属或金属合金。附带一提的是,本实用新型的具高散热特性的全角度发光组件1的该散热区域132的长度或面积可依需求而有所调整,在此并不局限。
因此,如图所示,由该散热支架13直接贴设该透明基板11上,使该发光芯片12设置于该透明基板11的该固晶区域110上所产生的高温将会直接导引至该散热支架13的该热源接触区段131再传至该散热区段132进行散热。又,该散热支架13的该热源接触区段131具有如梳体的多个突出部,所述突出部贴设于所述芯片12周缘,并且该发光芯片12至散热区段132的间隔距离非常短,因此,其散热路径为最短、最直接的路径,以使得本实用新型的具高散热特性的全角度发光组件1具有最佳散热效果的功效。
同时,为加强本实用新型的具高散热特性的全角度发光组件1的导热效果,本实用新型的具高散热特性的全角度发光组件1更可于该固晶区域110与该散热支架13上覆盖该导热胶14而使的封合。并且,由于该导热胶14为透明状,故将不会影响该发光芯片12所发出的光线,使本实用新型的具高散热特性的全角度发光组件1具有较佳地发光效果。
另外,本实用新型的具高散热特性的全角度发光组件1的该散热支架13的材质可为金属材质,而使本实用新型的该散热支架13具有较佳的热传导效果。
请参阅图4,其为本实用新型的具高散热特性的全角度发光组件的第二实施例的剖面图,如图所示,与第一实施例不同之处在于本实用新型的具高散热特性的全角度发光组件2更包含一第一荧光粉层15及一第二荧光粉层16,以供发光。所述发光芯片12可由此混光以激发出不同波长的色光。
其中,该第一荧光粉层15设于该透明基板11的一侧,该第二荧光粉层16设于该导热胶14、该发光芯片12与该散热支架13的另一侧,进而使该透明基板11、该导热胶14、该发光芯片12与该散热支架13夹合于该第一荧光粉层15及该第二荧光粉层16之间。并且,该发光芯片12为单晶结构,且可为单晶双光源芯片,使其可由上下两侧分别发射出不同波长的光源至该第一荧光粉层15及该第二荧光粉层16,以激发出混光光源。其中,该导热胶可为锡膏材质,以促使本实用新型的具高散热特性的全角度发光组件2的散热效能提高。
其中,该透明基板11由二氧化硅SiO2、磷化镓GaP、碳化硅SiC、砷化铝镓AlGaAs或蓝宝石(Sapphire)的其中的一种材料所制成。
请参阅图5,其为本实用新型的具高散热特性的全角度发光组件的第三实施例的立体图,如图所示,与第二实施例不同之处在于本实用新型的具高散热特性的全角度发光组件3更包含一第三荧光粉层17,设置于该透明基板11、该导热胶14、该发光芯片12与该散热支架13的左右两侧,使些微光源由左右两侧射出时,经该第三荧光粉层17得以激发出混光光源。
以上对本实用新型的描述是说明性的,而非限制性的,本专业技术人员理解,在权利要求限定的精神与范围内可对其进行许多修改、变化或等效,但是它们都将落入本实用新型的保护范围内。
Claims (5)
1.一种具高散热特性的全角度发光组件,其特征在于,包含:
一透明基板,具有一固晶区域,且该固晶区域面积为A;
至少一发光芯片,设于该固晶区域上;
至少一散热支架,贴抵设于该透明基板上,该散热支架为片状体结构并具有一散热区段与一热源接触区段,该散热支架的该热源接触区段靠抵该固晶区域邻接设置,其中该热源接触区段的面积为B,且3%≦B/A≦26%;及
一导热胶,覆盖该固晶区域与该散热支架而使之封合。
2.如权利要求1所述的具高散热特性的全角度发光组件,其特征在于,更包含:
一第一荧光粉层及一第二荧光粉层,其中该第一荧光粉层设于该透明基板下方,该第二荧光粉层设于该导热胶、该发光芯片与该散热支架上方,进而使该透明基板、该导热胶、该发光芯片与该散热支架夹合于该第一荧光粉层及该第二荧光粉层之间。
3.如权利要求1所述的具高散热特性的全角度发光组件,其特征在于,该发光芯片为单晶双光源芯片。
4.如权利要求1所述的具高散热特性的全角度发光组件,其特征在于,该散热支架的材质为金属。
5.如权利要求1至4其中任一项所述的具高散热特性的全角度发光组件,其特征在于,该导热胶为锡膏材质。
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Cited By (3)
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CN105895788A (zh) * | 2014-05-08 | 2016-08-24 | 罗冠杰 | 片式白光发光二极管、制备片式白光发光二极管的方法及封装胶材 |
WO2017121154A1 (zh) * | 2016-01-11 | 2017-07-20 | 漳洲立达信光电子科技有限公司 | Led灯丝封装结构 |
CN108321278A (zh) * | 2018-01-23 | 2018-07-24 | 深圳市璨阳光电有限公司 | 一种led封装器件 |
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EP2942825B1 (en) * | 2014-05-08 | 2020-04-15 | Guan-Jie Luo | White light emitting diode, manufacturing method |
CN106653990A (zh) * | 2015-11-04 | 2017-05-10 | 涂波 | Led封装的新导热方法 |
KR102737501B1 (ko) | 2017-01-31 | 2024-12-04 | 삼성전자주식회사 | Led장치 및 이를 이용한 led램프 |
CN112066273A (zh) * | 2019-06-10 | 2020-12-11 | 宁波天炬光电科技有限公司 | Led光源模组及照明装置 |
US20230106003A1 (en) * | 2020-08-21 | 2023-04-06 | Yin-Hu Ko | Led light source device and manufacturing method thereof |
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JP2007165811A (ja) * | 2005-12-16 | 2007-06-28 | Nichia Chem Ind Ltd | 発光装置 |
TWI391609B (zh) * | 2009-09-28 | 2013-04-01 | Yu Nung Shen | Light emitting diode lighting device |
KR101101241B1 (ko) | 2010-07-13 | 2012-01-04 | 김점도 | Led조명용 pcb기판의 방열 구조 |
US8587185B2 (en) * | 2010-12-08 | 2013-11-19 | Cree, Inc. | Linear LED lamp |
EP2492978B1 (en) * | 2010-12-28 | 2015-07-01 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device, light-emitting module, and lamp |
KR20120112936A (ko) * | 2011-04-04 | 2012-10-12 | 주식회사 허니리츠 | 양면 발광 엘이디 모듈을 갖는 램프 패키지 |
JP2012253073A (ja) | 2011-05-31 | 2012-12-20 | Olympus Corp | 半導体装置 |
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- 2013-03-20 CN CN201320127619XU patent/CN203218261U/zh not_active Expired - Fee Related
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CN105895788A (zh) * | 2014-05-08 | 2016-08-24 | 罗冠杰 | 片式白光发光二极管、制备片式白光发光二极管的方法及封装胶材 |
WO2017121154A1 (zh) * | 2016-01-11 | 2017-07-20 | 漳洲立达信光电子科技有限公司 | Led灯丝封装结构 |
CN108321278A (zh) * | 2018-01-23 | 2018-07-24 | 深圳市璨阳光电有限公司 | 一种led封装器件 |
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JP3185958U (ja) | 2013-09-12 |
US8710723B1 (en) | 2014-04-29 |
KR200476144Y1 (ko) | 2015-02-02 |
TWM457299U (zh) | 2013-07-11 |
DE202013102680U1 (de) | 2013-07-01 |
KR20140005079U (ko) | 2014-09-24 |
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