M424525 五、新型說明： 【新型所屬之技術領域】 本創作係關於-種半導體之散熱結構，特別是指一種 結構簡單且可大幅節省空間之轉體散熱結構。 【先前技術】 按般S用之半導體散熱結構，如我國新型專利申M424525 V. New Description: [New Technology Field] This creation is about the heat dissipation structure of a semiconductor, especially a rotating heat dissipation structure that is simple in structure and can save space. [Prior Art] Semiconductor heat dissipation structure used in general S, such as China's new patent application
裝置」，其揭露有.包 含-第-散熱片一第二散熱片與至少—套接塊；第一散 熱片之側邊設有至少-扣合部；第二散熱片之側邊至少設 有-扣合部且相對應於第—散熱片之扣合部；每— 套設於第-散熱片之扣合部與第二散熱片之扣合部，且兩 ==重疊於套接塊之内。於使用時，第-散熱 片，、第一政熱片將記憶體失固於兩者之間第—散敎片之 每-扣合部與第二散熱片之每—扣合部則分別與相_之 β己隐體的侧面相難，而每—套接塊即可套設於相對應 之該等扣〇邛並將該等扣合部兩兩包覆重疊於套接塊之 内。當記’隨需維修時’使用者只需手動將每—套接塊自 相對應之兩散熱片之扣合部取下，便可輕易拆卸第一散熱 片、第二散熱片而不造成記憶體之損壞。 然而’該習用半導體散熱結構雖可輕易地拆卸第一散 熱片、第二散熱片而不造成記憶體之損壞，但是其係利用 第一政熱片之扣合部及第二散熱片之扣合部’使第一散熱 片與第二散熱片將記憶體夾固於兩者之間，夾固之方式容 易於扣合部扣合以外之其他部分產生間隙’令非扣合之其 3 M424525 他部分無法緊貼於記憶體上’導致導熱及散熱效果減少， 而且該第一散熱片、第二散熱片為鋁材質之鋁片，鋁片之 導熱係數（237 W/mK )較低於銅片之導熱係數（ W/mK)，亦造成導熱及散熱效果較差。 另一種習用之半導體散熱結構，如我國新型專利申請 第097208194號「記憶體散熱改良裝置」，其揭露有：包括 二散熱體，係對稱設置，並皆由複數散熱鰭片扣合形成， 且於該散熱體内侧面形成一平面部，並於外侧面各相鄰散 熱鰭片間形成有複數個導流散熱風道，以增强散熱功效. 二導熱體，係貼附於該對散熱體之平面部上，且該對散熱 體内側面藉由該導熱體貼附於記憶體之兩側上，俾用以幫 助記憶體進行散熱。 然而’該另-習用半導體散熱結構，其具散熱鰭片之 散熱體係雜導熱介質（散齡或散熱貼布）貼附於 記憶體之兩側，散熱方式是透過黏性導熱介質(散熱膏或散 熱貼布)及金脉散_片來做熱交換，但是金屬銘散熱縛 片之導熱係數為237 W/mK，遠大於黏性導熱介質(散熱膏或 政熱貼布）之導熱係數〇. 5W/mj(〜1· 5W/mK，導致半導體之熱 量傳導經·性導熱介質時，導熱速度踩了煞車再傳導到 金屬叙鰭#上散熱，造成散熱效率差，更職金屬紹鰭片 沒有緊貼記紐表面’散熱效果更差，*且該另—習用半 導體散熱賴，結構複轉肖目不當安裝，造成半導體受 損。 由此可見，上述習用物品仍有諸多缺失，實非一良善 4 之設計者’而亟待加以改良。 【新型内容】 鑑於上述習用半導體散熱結構所衍生的各項缺點，本 案創作人乃亟思加以改良創新，並經多年苦心孤詣潛心研 究後，終於成功研發完成本件一種半導體之散熱結構。 本創作之一目的，在於提供一種半導體之散熱結構， 係結構簡單且可大幅節省空間。 本創作之另一目的，在於提供一種半導體之散熱結 構’係半導體可完全緊貼於電路板之銅箔層上，而利用導 熱係數高之銅箔層（導熱係數I 401 w/mK),使半導體之 熱里谷易平均且快速地傳導至空氣中。 可達成上述新型目的之半導體之散熱結構，包括有： 至少-個半導體及—電路板；其巾，該料導麟接於該 電路板至少一面之銅箔層的電路上，使該等半導體緊貼於 銅箔層上；該電路板之電路接地端設於電路板内層之銅箔 層上，該電路板上設有至少一貫穿孔，該等貫穿孔貫穿該 電路板二面之鋼箔層的電路，且該等貫穿孔内壁分別設有 中二銅柱，令鋼柱與該電路板二面之銅箔層的電路相 接，又，該電路板至少一面未銲接部份之銅箔層表面係除 去防銲漆，使該未銲接部份之銅箔層直接裸露接觸外界之 工氣，使用時，该等半導體產生之熱量，可經由其内部銅 金線路或自體粘著之錫球、電路板之銅箔層傳導至接觸空 氣之鋼糾上’或者經由其㈣銅金線路或自魏著之錫 球、電路板之鋼騎、貫穿孔之触傳導至接觸空氣之銅 M424525 ^上’再由大面積接觸空氣之銅騎與冷空氣接觸產生 熱交換而逹到散熱效果。 明參閱以下有關本創作一較佳實施例之詳細說明及其 附圖’將可進-步瞭解本創作之技術内容及其目的功效：“ 【實施方式】 本創作所提供之一種「半導體之散熱結構」，請參閱 圖第卜2圖所示，主要包括有：至少—個半導體1〇及一電 路板20。 其中，該等半導體10藉其錫球銲接於該電路板2〇至少 -面之銅騎21的電路上，使該等半導_緊貼於銅荡層 21上。 該電路板20設有複數層之銅落層21電路，該電路板2〇 之電路接地端設於電路板2〇内層之銅箔層21上， 該電路板20上設有至少一貫穿孔22，該等貫穿孔以貫 穿该電路板20二面之銅箔層21的電路，且該等貫穿孔“内 壁分別設有-中空銅柱23，令銅柱23與該電路板2〇二面之 銅fl層21的電路相接’又’該電路板2〇至少一面未鲜接部 份之銅结層24表面係除去防銲漆，使該未銲接部份之銅箱 層24直接裸露接觸外界之空氣。 請參閱圖第3圖所示，使用時’該等半導體1〇產生之熱 里，可經由其内部銅金線路或自體粘著之錫球'電路板之 銅镇層21傳導至接觸空氣之銅箱層24上，或者經由其内部 銅金線路或自魏著之錫球、電路板之銅羯層21、貫穿孔 22之銅柱23傳導至接觸空氣之銅落屢24上，再由大面積接 6 觸空氣之銅治層24與冷空氣接觸產生熱交換而逹到散熱目 的及效能。 另，該半導體可為一dram記憶體。 該銅柱23中空部份可灌滿銲錫（圖中未示）。 該接觸空氣之銅箔層24表面可鍍設一層防止氧化之金 屬層（如：銀層）’藉以避免接觸空氣之銅箔層24直接接 觸空氣而氧化。 本創作所提供之半導體之散熱結構，與前述引證案及 其他習用技術相互比較時，更具有下列之優點： 1、 結構簡單、可大幅節省空間。 2、 半導體可完全緊貼於電路板之銅箔層上，而利用 導熱係數高之銅箔層（導熱係數：401 W/mK)， 使半導體之熱量容易平均且快速地傳導至空氣 (導熱係數：0.025 W/mK)中。 3'本創作係採用導熱係數高之銅箔層（導熱係數： 401 W/mK)，無一般習用技術採用金屬鋁鰭片 (導熱係數：237 W/mK)及黏性導熱介質（散熱 膏或散熱貼布）（導熱係數：約從〇. 5W/mK〜 1. 5W/mK)兩種導熱係數相差很大，熱量傳導經過 Ιέ性導熱介質時，導熱速度踩了煞車再傳導到金 屬紹鰭片上散熱，造成散熱效率差之缺失。 4、本創作之散熱結構，是加工製程中的原生散熱結 構’無需借助任何介質來導熱，是透過原PCBA的加 工製程及改良的結構，來做到簡省工序、加速散熱 M424525 的散熱結構，及不 體在外加散熱結構 的原理來發歸簡省及最有效率的散 需額外的卫序及絲來避免半導體在 的不當損害。 上列詳細說明係針對本創作之一可行實施例之罝體說 明，惟該實施例並非肋限制本創作之專利範園， 【圖式簡單說明】 第1圖為本創作之外觀示意圖。 第2圖為本創作之剖面示意圖。 第3圖為本創作之使用示意圖。 【主要元件符號說明】 離本創作技藝精神所為之等效實施或變更，例如·♦等變化 之等效性實施例’均應包含於本案之專利範圍十。 1〇半導體 21銅箔層 23鋼柱 20電路板 22貫穿孔 24未銲接部份之銅箔層 8The device includes: a first heat sink and a second heat sink and at least a socket; the side of the first heat sink is provided with at least a fastening portion; and the side of the second heat sink is provided with at least a side - a fastening portion corresponding to the fastening portion of the first heat sink; each sleeve is disposed on the fastening portion of the first heat sink and the second heat sink, and two == overlapped with the socket Inside. In use, the first heat sink, the first political heat sheet detaches the memory between the two, and each of the fastening portions of the first and second heat sinks and the fastening portion respectively The side of the phase has a difficult side, and each of the sleeves can be sleeved on the corresponding buckles and the two portions of the fastening portions are overlapped within the socket block. When the 'on-demand repair' user only needs to manually remove each of the sockets from the corresponding two heat sink fastening parts, the first heat sink and the second heat sink can be easily disassembled without causing memory. Body damage. However, the conventional semiconductor heat dissipation structure can easily disassemble the first heat sink and the second heat sink without causing damage to the memory, but the fastening of the first heat film and the second heat sink are utilized. The part 'make the first heat sink and the second heat sink to clamp the memory between the two, and the way of clamping is easy to produce a gap other than the fastening part of the buckle portion' to make it non-buckling its 3 M424525 Some parts cannot be attached to the memory', resulting in less heat conduction and heat dissipation. The first heat sink and the second heat sink are made of aluminum, and the thermal conductivity of the aluminum sheet (237 W/mK) is lower than that of the copper sheet. The thermal conductivity (W/mK) also causes poor heat conduction and heat dissipation. Another conventional semiconductor heat dissipating structure, such as the "new memory heat-dissipating device" of the Chinese Patent Application No. 097208194, discloses: comprising two heat dissipating bodies, which are symmetrically arranged, and are formed by a plurality of heat dissipating fins, and The side surface of the heat dissipating body forms a flat portion, and a plurality of guiding heat dissipating air passages are formed between the adjacent heat dissipating fins on the outer side surface to enhance the heat dissipating effect. The heat conducting body is attached to the plane of the pair of heat dissipating bodies And the pair of heat dissipating body sides are attached to the two sides of the memory by the heat conductor to help the memory to dissipate heat. However, the other-used semiconductor heat-dissipating structure, the heat-dissipating heat dissipation medium (scattering age or heat-dissipating patch) with heat-dissipating fins is attached to both sides of the memory, and the heat-dissipating method is through a viscous heat-conducting medium (thermal grease or Heat-dissipating patch) and Jinmaisan _ film for heat exchange, but the thermal conductivity of the metal-based heat-dissipating tab is 237 W/mK, which is much larger than the thermal conductivity of the viscous heat-conducting medium (thermal grease or political heat patch) 5W/mj (~1·5W/mK, when the heat of the semiconductor is transmitted through the thermal medium, the heat conduction speed is stepped on the brake and then transmitted to the metal fin fins to dissipate heat, resulting in poor heat dissipation efficiency, and the service metal fins There is no close contact with the surface of the new one, 'the heat dissipation effect is even worse, and the other-used semiconductor heat dissipation depends on the improper installation of the structure, which causes the semiconductor to be damaged. It can be seen that there are still many missing items in the above-mentioned household items. The designer of Liangshan 4 is urgently needed to be improved. [New content] In view of the shortcomings derived from the above-mentioned conventional semiconductor heat dissipation structure, the creator of this case is a reformer and innovation, and after many years of painstaking research. After that, the heat dissipation structure of a semiconductor has been successfully developed. One of the aims of the present invention is to provide a heat dissipation structure for a semiconductor, which has a simple structure and can save space. Another object of the present invention is to provide a heat dissipation structure for a semiconductor. The semiconductor can be completely adhered to the copper foil layer of the circuit board, and the copper foil layer (thermal conductivity I 401 w/mK) with high thermal conductivity is used to make the heat radiance of the semiconductor easy to conduct into the air evenly and quickly. The heat dissipation structure of the semiconductor capable of achieving the above-mentioned novel purpose includes: at least a semiconductor and a circuit board; and a substrate which is connected to a circuit of a copper foil layer on at least one side of the circuit board to make the semiconductor tight Attached to the copper foil layer; the circuit ground end of the circuit board is disposed on the copper foil layer on the inner layer of the circuit board, and the circuit board is provided with at least a uniform through hole, and the through holes penetrate through the steel foil layer on both sides of the circuit board a circuit, wherein the inner wall of the through holes is respectively provided with a middle two copper pillars, so that the steel pillars are connected with the circuit of the copper foil layer on both sides of the circuit board, and at least one side of the circuit board is not soldered Part of the surface of the copper foil layer is stripped of the solder resist paint, so that the copper foil layer of the unwelded portion is directly exposed to the outside of the work gas, and the heat generated by the semiconductors can be generated through the internal copper gold line or the self. The body-bonded solder ball, the copper foil layer of the circuit board is conducted to the steel contacting the air or 'via the (4) copper-gold wire or the solder ball from the Wei, the steel plate of the circuit board, the contact of the through hole to the contact The air copper M424525 ^上' is further contacted by the copper contact of the large area of contact with the cold air to generate heat exchange to achieve the heat dissipation effect. See the following detailed description of a preferred embodiment of the present invention and its drawing 'will be Step-by-step understanding of the technical content of this creation and its purpose: "Embodiment" This article provides a "semiconductor heat dissipation structure", please refer to Figure 2, which mainly includes: at least one semiconductor 1〇 and a circuit board 20. The semiconductors 10 are soldered to the circuit of the copper plate 21 of at least the surface of the circuit board 2 by solder balls, so that the semiconductors are adhered to the copper layer 21. The circuit board 20 is provided with a plurality of layers of copper falling layer 21 circuits. The grounding end of the circuit board 2 is disposed on the copper foil layer 21 of the inner layer of the circuit board 2, and the circuit board 20 is provided with at least a uniform through hole 22, The through holes are formed by a circuit that penetrates the copper foil layer 21 on both sides of the circuit board 20, and the inner walls of the through holes are respectively provided with a hollow copper pillar 23, and the copper pillars 23 and the copper of the circuit board 2 are formed on both sides. The circuit of the fl layer 21 is connected to the surface of the copper layer 24 of at least one of the unexposed portions of the circuit board 2 to remove the solder resist paint, so that the copper box layer 24 of the unwelded portion is directly exposed to the outside. Air. Please refer to Figure 3, when used, the heat generated by these semiconductors can be conducted to the contact via the copper-copper line of the internal copper-plated wire or the self-adhesive solder ball' circuit board. On the copper tank layer 24 of the air, or through its internal copper-gold wire or the solder ball of Wei, the copper layer 21 of the circuit board, and the copper pillar 23 of the through hole 22, the copper pillar 23 of the through hole 22 is transmitted to the copper contact 24 of the contact air, and then The copper layer 24, which is connected to the air with a large area, is in contact with the cold air to generate heat exchange for heat dissipation purposes and efficiency. The semiconductor can be a dram memory. The hollow portion of the copper pillar 23 can be filled with solder (not shown). The surface of the copper foil layer 24 contacting the air can be plated with a metal layer for preventing oxidation (such as silver). Layer) 'to avoid contact with air, the copper foil layer 24 is directly exposed to air and oxidize. The heat dissipation structure of the semiconductor provided by the present invention has the following advantages when compared with the above cited documents and other conventional techniques: 1. Simple structure It can save a lot of space. 2. The semiconductor can be completely adhered to the copper foil layer of the circuit board, and the copper foil layer with high thermal conductivity (thermal conductivity: 401 W/mK) can make the heat of the semiconductor easy to average and fast. Conducted to air (thermal conductivity: 0.025 W/mK). 3' This creation uses a copper foil layer with high thermal conductivity (thermal conductivity: 401 W/mK). No general use of metal aluminum fins (thermal conductivity: 237 W/mK) and viscous heat transfer medium (heat-dissipating paste or heat-dissipating patch) (thermal conductivity: about 〇. 5W/mK~ 1. 5W/mK). The two thermal conductivity coefficients vary greatly, and the heat conduction passes through the conductive heat conduction. Heat transfer rate After stepping on the brakes and then conducting heat to the metal fins, the heat dissipation efficiency is lacking. 4. The heat dissipation structure of the creation is the original heat dissipation structure in the processing process. 'The heat is not required by any medium, and the processing is through the original PCBA. Process and improved structure, to simplify the process, accelerate the heat dissipation structure of the M424525, and the principle of the external heat dissipation structure, to save the simple and most efficient need for additional guardian and wire to avoid semiconductor Inappropriate damage. The above detailed description is for the description of the possible embodiment of this creation, but this embodiment is not a limitation of the patent garden of this creation. [Simplified illustration] Figure 1 is the creation of this Schematic diagram of the appearance. Figure 2 is a schematic cross-sectional view of the creation. Figure 3 is a schematic diagram of the use of the creation. [Explanation of the main component symbols] Equivalent implementations or changes from the spirit of the creative art, such as the equivalent embodiment of the changes, etc., shall be included in the scope of patent of the present invention. 1〇Semiconductor 21 Copper foil layer 23 Steel column 20 Circuit board 22 Through hole 24 Unbonded copper foil layer 8