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TWI851709B - 用於光學裝置的多深度膜 - Google Patents

用於光學裝置的多深度膜 Download PDF

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TWI851709B
TWI851709B TW109112135A TW109112135A TWI851709B TW I851709 B TWI851709 B TW I851709B TW 109112135 A TW109112135 A TW 109112135A TW 109112135 A TW109112135 A TW 109112135A TW I851709 B TWI851709 B TW I851709B
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mask
depth
substrate
carrier
base layer
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TW202104939A (zh
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卡爾Ｊ 阿姆斯壯
路迪維奇 高德
布萊恩亞歷山大 科漢
偉恩 麥克米蘭
詹姆斯Ｄ 施特拉斯納
班傑明 瑞爾登
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美商應用材料股份有限公司
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Abstract

本揭示案之實施例關於形成用於製造光學裝置的多深度膜。一個實施例包含在基板之表面上設置裝置材料之基底層。裝置材料之一或更多個心軸設置在基底層上。設置一或更多個心軸的步驟包含在基底層上方定位遮罩。在遮罩位於基底層上方的情況下沉積裝置材料以形成光學裝置，該光學裝置具有具基底層深度的基底層及具有第一心軸深度與第二心軸深度的一或更多個心軸。

Description

用於光學裝置的多深度膜
本揭示案之實施例大體而言關於光學裝置。更具體而言，本文描述的實施例提供用於製造光學裝置的多深度膜之形成。
光學裝置可用於藉由在基板上形成的光學裝置之結構之空間變化的結構參數（例如，形狀、尺寸、定向）來操縱光之傳播。光學裝置提供空間變化的光學響應，其根據需要塑形光學波前。光學裝置之這些結構藉由引起局部相位不連續（亦即，在小於光之波長的距離上的相位之突然改變）來改變光傳播。這些結構可由基板上不同類型的材料、形狀或配置構成，並且可基於不同的物理原理來操作。
製造光學裝置需要由設置在基板上的裝置材料層形成結構。然而，待製造的光學裝置之期望性質可能需要具有各種深度的結構。因此，在本領域中需要用於形成用於製造光學裝置的多深度膜的方法。
在一個實施例中，提供一種方法。該方法包含在基板之表面上設置裝置材料之基底層。基底層具有基底層深度。裝置材料之一或更多個心軸設置在基底層上。設置一或更多個心軸的步驟包含在基底層上方定位遮罩。遮罩具有具第一遮罩深度的槽之圖案之第一部分及具第二遮罩深度的槽之該圖案之第二部分。第一遮罩深度對應於具有第一心軸深度的心軸，第二遮罩深度對應於具有第二心軸深度的心軸。在遮罩位於基底層上方的情況下沉積裝置材料以形成光學裝置，該光學裝置具有具基底層深度的基底層及具有第一心軸深度與第二心軸深度的一或更多個心軸。
在另一個實施例中，提供一種方法。該方法包含在基板之表面上設置裝置材料之基底層。基底層具有基底層深度。裝置材料之一或更多個心軸設置在基底層上。設置一或更多個心軸的步驟包含在基底層上方定位第一遮罩，並且在第一遮罩上方定位第二遮罩。第一遮罩具有具第一遮罩深度的槽之第一圖案。第一遮罩深度對應於具有第一心軸深度的心軸。第二遮罩具有具第二遮罩深度的槽之第二圖案。第二遮罩深度對應於具有第二心軸深度的心軸。在第一遮罩與第二遮罩位於基底層上方的情況下沉積裝置材料以形成光學裝置，該光學裝置具有具基底層深度的基底層及具有第一心軸深度與第二心軸深度的一或更多個心軸。
在又另一個實施例中，提供一種方法。該方法包含在基板之表面上設置裝置材料之基底層。基底層具有基底層深度。第一圖案化光阻設置在基底層上方。第一圖案化光阻具有第一開口及對應於第一心軸深度的第一厚度。裝置材料沉積在第一圖案化光阻上方。移除第一圖案化光阻以形成具有第一心軸深度的一或更多個心軸。第二圖案化光阻設置在基底層及具有第一心軸深度的一或更多個心軸上方。第二圖案化光阻具有第二開口及對應於第二心軸深度的第二厚度。裝置材料沉積在第二圖案化光阻上方。移除第二圖案化光阻以形成具有第一心軸深度及第二心軸深度的一或更多個心軸。
在另一個實施例中，一種處理系統包括：工廠介面(factory interface)；設置在工廠介面內的第一致動器；設置在工廠介面內的第二致動器；設置在工廠介面內的對準器站；及與工廠介面耦接的翻轉裝置(flipper device)。
在另一個實施例中，一種組裝載具組件之方法包括以下步驟：將載具插入對準站中，該載具上具有遮罩；對準載具與遮罩；將遮罩與載具分離；從對準站移除載具；將基板插入對準站中；使基板與遮罩接觸；及使載具與基板及遮罩接觸以產生載具組件。
本揭示案之實施例關於形成用於製造光學裝置的多深度膜。第1圖為用於形成多深度膜200的方法100之流程圖。第2A圖及第2B圖為在用於形成多深度膜200的方法100期間的基板201之示意剖面圖。
於操作101，如第2A圖所示，裝置材料之基底層202設置在基板201之表面203上。基板201亦可經選擇以透射適當量的期望的波長或波長範圍的光，如紅外區域至UV區域（亦即，從約700奈米至約1500奈米）中的一或更多個波長。在不受限制下，在一些實施例中，基板201經配置為使得對光譜之UV區域基板201透射大於或等於約50%、60%、70%、80%、90%、95%、99%。基板201可由任何適合的材料形成，只要基板201可適當地透射期望的波長或波長範圍中的光並且可用作光學裝置的適當支撐件即可。在可與本文所述的其他實施例結合的一些實施例中，與裝置材料之折射率相比，基板201之材料具有相對較低的折射率。基板選擇可包含任何適合的材料之基板，包含但不限於非晶介電質、結晶介電質、氧化矽、聚合物及其組合。在可與本文所述的其他實施例結合的一些實施例中，基板201包含透明材料。在可與本文所述的其他實施例結合的一個實施例中，基板201為透明的且吸收係數小於0.001。適合的實例可包含氧化物、硫化物、磷化物、碲化物或其組合。
在可與本文所述的其他實施例結合的一個實施例中，在基板201之表面203上方設置裝置材料之基底層202的步驟包含但不限於以下中之一或更多者：液體材料澆鑄(liquid material pour casting)製程、旋轉塗佈(spin-on coating)製程、液體噴塗(liquid spray coating)製程、乾式粉末塗佈(dry powder coating)製程、絲網印刷(screen printing)製程、刮刀塗佈(doctor blading)製程、物理氣相沉積（PVD）製程、化學氣相沉積（CVD）製程、電漿增強（PECVD）製程、可流動CVD（FCVD）製程以及原子層沉積（ALD）製程。在可與本文所述的其他實施例結合的另一個實施例中，材料層包含但不限於含二氧化鈦（TiO2 ）、氧化鋅（ZnO）、二氧化錫（SnO2 ）、鋁摻雜的氧化鋅（AZO）、氟摻雜的氧化錫（FTO）、錫酸鎘（氧化錫）（CTO），及錫酸鋅（氧化錫）（SnZnO3 ）、氮化矽（Si3 N4 ），及非晶矽（a-Si）的材料。基底層202具有從基底層202至基板201之表面203的基底層厚度204。
於操作102，如第2B圖所示，裝置材料之一或多個心軸208設置在基底層202上以形成多深度膜200。在可與本文所述的其他實施例結合的一個實施例中，於操作102，如第3A圖所示，包含在基板201上方定位遮罩301（如陰影遮罩）並且沉積裝置材料。沉積裝置材料可包含但不限於以下中之一或更多者：PVD製程、CVD製程、PECVD製程、FCVD製程或ALD製程。可在能在真空壓力下操作的沉積腔室中執行裝置材料之沉積。
遮罩301包含穿過遮罩301設置的槽302之圖案。槽302之圖案之第一部分306具有第一遮罩深度308，槽302之圖案之第二部分304具有第二遮罩深度310。具有第一遮罩深度308的槽302之圖案之第一部分306形成具有第一心軸深度210的一或更多個心軸208。第一心軸深度210為從具有第一心軸深度210的心軸208之頂表面212至基底層202的距離。具有第二遮罩深度310的槽302之圖案之第二部分304形成具有第二心軸深度211的一或更多個心軸208。第二心軸深度211為從具有第二心軸深度211的心軸208之頂表面214至基底層202的距離。如第3A圖所示，遮罩301在第二部分304的表面高於遮罩301在第一部分306的表面。如第2B圖所示，多深度膜200包含基底層202及一或更多個心軸208，基底層202具有基底層厚度204，心軸208具有第一心軸深度210及第二心軸深度211。在可與本文所述的其他實施例結合的一個實施例中，多深度膜200包含形成在其上的對準標記(未圖示)以用於進一步處理，如用於將多深度膜200圖案化及/或蝕刻以在基板201上形成裝置材料之結構。
在可與本文所述的其他實施例結合的一個實施例中，如第3A圖及第3B圖所示，基板201被保持在基板支撐件303上。基板支撐件303包含夾環(clamp ring)305，夾環305能夠將基板201保持在基板支撐件303上而不接 觸基底層202及心軸208。在可與本文所述的其他實施例結合的一個實施例中，遮罩301組裝至夾環305中並且基於改變遮罩301中的窗口(例如，槽302)之尺寸的沉積的裝置材料累積之速率以一定間隔進行更換。
在可與本文所述的其他實施例結合的另一個實施例中，遮罩301由基板尺寸的盤形成，且黏合劑塗佈至盤之外周圍。該黏合劑允許基板201附著至夾環305之下側。在遮罩301已累積了最大可容忍的沉積的裝置材料之後，腔室中的加熱器將加熱至消除黏合劑之附著力的溫度，從而釋放基板201以在與腔室耦接的裝載閘(load lock)處被取回及更換。在可與本文所述的其他實施例結合的一個實施例中，遮罩301可裝載至快門盤區域中。機構可將遮罩301附著至夾環305。釋放機構可釋放附著至夾環305之下側的遮罩301。
基板支撐件303耦接至延伸穿過腔室主體309的桿307。桿307連接至舉升系統(未圖示)，該舉升系統使基板支撐件303在處理位置(如圖示)與傳送位置(未圖示)之間移動以促進基板201之傳送。遮罩301可包含開口(未圖示)用以使遮罩301與基板201及遮罩支撐件311對準，遮罩支撐件311耦接至腔室主體309之一或更多個致動器313。一或更多個致動器313控制遮罩支撐件311之移動，以使遮罩301(或第3B圖之第一遮罩315及第二遮罩317)與基板201對準。遮罩301亦可防止在操作102期間在基板201之邊緣205上沉積裝置材料。
在可與本文所述的其他實施例結合的一個實施例中，遮罩301為帶狀(tape)遮罩。帶狀遮罩可包含聚合物片，如聚醯亞胺(polyimide)。帶狀遮罩可纏繞在捲軸上。於操作102，經由使帶與基板201緊密接觸的進料機構進給帶狀遮罩。第一機構用於將帶狀遮罩附著至基板201，如靜電電荷或黏合劑。第二機構（如輥或圖框）用於以受控方式將帶狀遮罩放置在基板201上。在可與本文所述的其他實施例結合的一個實施例中，帶狀遮罩在纏繞至捲軸上之前已進行預圖案化。在可與本文所述的其他實施例結合的另一個實施例中，雷射劃線站用於產生各種遮罩圖案中之任一種。
在可與本文所述的其他實施例結合的一個實施例中，如第3B圖、第3C圖及第3D圖所示，操作102包含在基板201上方定位第一遮罩315及第二遮罩317以及沉積裝置材料。可在第一遮罩315及第二遮罩317皆位於基板201上方的情況下執行裝置材料的沉積。可在第一遮罩315位於基板201上方並且隨後第二遮罩317位於基板201上方的情況下執行裝置材料的沉積。利用第一遮罩315及第二遮罩317形成多深度膜200，多深度膜200包含具有基底層厚度204的基底層202以及具有第一心軸深度210與第二心軸深度211的一或更多個心軸208。
第一遮罩315包含穿過第一遮罩315設置的槽314之圖案。槽314之圖案具有第一遮罩深度316。具有第一遮罩深度316的槽314之圖案形成具有第一心軸深度210的一或更多個心軸208。第二遮罩317包含穿過第二遮罩317設置的槽318之圖案。槽318之圖案具有第二遮罩深度320。槽318之圖案與槽314之圖案之一部分對準。在可與本文所述的其他實施例結合的一個實施例中，槽318之圖案與槽314之圖案之部分重疊。槽318之圖案與槽314之圖案之部分對準，形成具有第二心軸深度211的一或更多個心軸208。第一遮罩315及第二遮罩317可包含開口319，以使第一遮罩315及第二遮罩317與基板201及遮罩支撐件311對準，遮罩支撐件311耦接至腔室主體309之一或更多個致動器313。
在可與本文所述的其他實施例結合的一個實施例中，支架系統用於從輸送帶上拾取至少一個基板201，並且將每個基板201放置在蛤殼式(clamshell)遮罩施加器之接收區域中。蛤殼式遮罩施加器可配備有對準能力，並且多個遮罩（例如，第一遮罩315及第二遮罩317）可在基板201上方對準。在可與本文所述的其他實施例結合的一個實施例中，底部遮罩（例如，第一遮罩315）可具有在其上圖案化的特徵，並且空白的斑塊(blank off patch)可固定至底部遮罩。可在方法100期間依序移除空白斑塊。
第4圖為用於形成多深度膜500的方法400之流程圖。第5A圖至第5C圖為在用於形成多深度膜500的方法400期間的基板201之示意剖面圖。
於操作401，第一圖案化光阻502設置在裝置材料之基底層202上方，該裝置材料之基底層202設置在基板201之表面203上。如方法100之操作101所述，裝置材料之基底層202設置在基板201之表面203上。第一圖案化光阻502為藉由在基底層202上方設置光阻材料並且執行微影製程來形成。第一圖案化光阻502包含第一開口504，第一開口504對應於待形成的具有第一心軸深度210的一或更多個心軸208。第一圖案化光阻502具有第一厚度506，第一厚度506對應於第一心軸深度210。
於操作402，在第一圖案化光阻502上方沉積裝置材料，並且移除第一圖案化光阻502以形成具有第一心軸深度210的一或更多個心軸208。移除第一圖案化光阻502的步驟可包含微影製程或蝕刻製程。於操作403，在基底層202及具有第一心軸深度210的一或更多個心軸208上方設置第二圖案化光阻508。第二圖案化光阻508為藉由在基底層202上方設置光阻材料並且執行微影製程來形成。第二圖案化光阻508包含第二開口512，第二開口512與具有第一心軸深度210的一或更多個心軸208之一部分對準。在操作403之後，第二開口512與具有第一心軸深度210的一或更多個心軸208之部分的對準將形成具有第二心軸深度211的一或更多個心軸208。第二圖案化光阻508具有第二厚度510，第二厚度510與第一心軸深度210結合對應於第二心軸深度211。
於操作404，在第二圖案化光阻508上方沉積裝置材料，並且移除第二圖案化光阻508以形成具有第二心軸深度211的一或更多個心軸208。移除第二圖案化光阻508的步驟可包含微影製程或蝕刻製程。移除第二圖案化光阻508的步驟形成多深度膜500，多深度膜500包含具有基底層厚度204的基底層202以及具有第一心軸深度210與第二心軸深度211的一或更多個心軸208。
第6圖為根據一個實施例的載具組件600之示意圖。載具組件600由載具601、基板201及夾環或遮罩301組成。載具組件600用於在處理期間支撐及運輸基板201。載具601將基板201支撐在基板之外邊緣上，以便不損壞基板201之背側。在一個實施例中，載具601為300 mm載具。在一個實施例中，基板201為200 mm基板，並且遮罩301為200 mm遮罩。在另一個實施例中，基板201為300 mm基板，並且遮罩為300 mm遮罩。
第7A圖為處理系統700之示意圖。處理系統700包含耦接至裝載閘702的傳送腔室701。應理解，儘管在第7A圖中圖示兩個裝載閘702，但預期可使用單一裝載閘702，或甚至可使用多於兩個裝載閘702。因此，本文論述的實施例不限於兩個裝載閘702。裝載閘702耦接至工廠介面704。裝載端口站705耦接至工廠介面704。在一個實施例中，如第7A圖所示，存在四個裝載端口站705。應理解，儘管在第7A圖中圖示四個裝載端口站705，但預期可使用任何數量的裝載端口站705。因此，本文論述的實施例不限於四個裝載端口站705。在一個實施例中，處理系統700可為蝕刻製程腔室。在另一個實施例中，處理系統700可為PVD製程腔室。裝載端口站705將含有一或更多個載具組件600。載具組件將在與裝載端口站705及工廠介面704分開的位置處組裝。
載具組件600將在離線建構站703中組裝。建構站703用於以自動化形式來建構及拆卸一或更多個載具組件600。自動地建構載具組件600更有效率，及時且合乎成本，並且防止潛在的顆粒損傷或破裂。與若為手動建構的載具組件600相比，自動地建構載具組件600亦可生產更高品質的產品。
第7B圖為離線建構站703之詳細示意圖。利用建構站703來組裝載具組件600。離線建構站703具有工廠介面704及裝載端口站705a至705d。前開式晶圓傳送盒（FOUP）801a及801b分別位於裝載端口站705a及705b。FOUP 802位於裝載端口站705d。翻轉裝置803位於裝載端口站705c。兩個致動器706及707設置在工廠介面704內。在一個實施例中，致動器706為應用材料公司的300 mm SCARA機器人，而致動器707為應用材料公司的200 mm SCARA機器人。致動器706及致動器707彼此獨立。致動器706、707具有致動器臂708及709。臂708、709使致動器706、707能夠接收及運輸載具組件600之部件。真空吸盤710及對準器711位於工廠介面704中的致動器706、707之間的對準器站900。
第8A圖及第8B圖為FOUP 801及FOUP 802之剖面圖。第8A圖代表FOUP 801。FOUP 801裝載有載具601及遮罩301。FOUP 801為300 mm FOUP。通用FOUP為具有25個槽的匣。FOUP 801為利用二十五個槽中之每個其他槽的跳過裝載(skip-loaded)。槽804a-l代表FOUP 801之已裝載槽。槽805代表空槽。每個FOUP 801裝載有十二個載具組件600。第8B圖代表FOUP 802。FOUP 802裝載有基板201。在一個實施例中，FOUP 802為300 mm FOUP。在另一個實施例中，FOUP 802為200 mm基板FOUP。FOUP 802裝載有二十四個基板201。
對準器711用於在XY方向上定向遮罩301、基板201及載具601。對準器711能夠旋轉360度。對準器711旋轉遮罩301、基板201或載具601以尋找遮罩301、基板201及載具601之中心712。對準器711能夠以約0.001吋的準確度定位遮罩301、基板201或載具601之中心712。對準器711能夠對準200 mm基板或300 mm基板。在一個實施例中，如第3C圖及第3D圖所描繪，遮罩301、基板201及載具601藉由開口319對準。如以下所論述，對準器711包含真空吸盤710。真空吸盤710具有內部區域901及外部區域902。內部區域901經配置為吸附基板201。外部區域902經配置為吸附遮罩301。
第9A圖至第9F圖為建構載具組件600的建構站703之示例性實施例之各個階段之示意剖面圖。第9A圖描繪過程開始。該過程從致動器706將致動器臂708延伸至FOUP 801a中開始。該致動器藉由在載具601下方延伸臂708來接收遮罩301及載具601。臂708將遮罩301及載具601運輸至對準器711。致動器706將遮罩301及載具601放置在對準器711上，然後致動器706縮回臂708。對準器711對準遮罩301及載具601。致動器706在現對準的遮罩301及載具601下方延伸臂708。如第9B圖所描繪，致動器臂708將遮罩301及載具601提升距離903至真空吸盤710。距離903為預先校準的距離。真空吸盤710與外部區域902接合，並且將遮罩301吸附至真空吸盤710。在遮罩301吸附至真空吸盤710的情況下，致動器臂708降低載具601，如第9C圖所描繪。一旦降低，致動器臂708即與載具601一起縮回。
致動器707將致動器臂709延伸至FOUP 802中。臂709接收基板201。臂709將基板201運輸至對準器711。致動器707縮回臂709，同時對準器711對準基板201。如第9D圖所描繪，臂709在現對準的基板201下方延伸。如第9E圖所描繪，臂709將基板201提升距離903至真空吸盤710。真空吸盤710接合內部區域901，並且將基板201吸附至真空吸盤710。致動器臂709現降低並且縮回。致動器臂708現延伸載具601。臂708將載具601提升距離903至真空吸盤710。真空吸盤710之內部區域902釋放基板201。真空吸盤710之外部區域901釋放遮罩301。如第9F圖所描繪，現完全組裝的載具組件600藉由臂708降低。致動器臂708縮回載具組件600，並且將完整的載具組件600返回至FOUP 801a。現在，致動器臂708能夠從FOUP 801a擷取另一個遮罩301及載具601組件。沿向下方向806移動，致動器臂擷取下一個遮罩301，並且從下一個槽接收載具601。重複以上揭示的建構過程直到FOUP 801a之全部組件皆完成為止。一旦FOUP 801a之全部組件600完成，即對FOUP 801b重複該過程。第9A圖至第9F圖中描繪的過程造成FOUP 801a及FOUP 801b中完全組裝的載具組件600。
以上揭示的過程亦可在沒有遮罩301的情況下完成。該過程於致動器706將致動器臂708延伸至FOUP 801a中開始。該致動器藉由在載具601下方延伸臂708來接收載具601。臂708將載具601運輸至對準器711。致動器706將載具601放置在對準器711上，然後致動器706收回臂708。對準器711對準載具601。一旦對準後，致動器臂708與載具601一起縮回。
致動器707將致動器臂709延伸至FOUP 802中。臂709接收基板201。臂709將基板201運輸至對準器711。致動器707縮回臂709，同時對準器711對準基板201。臂709在現對準的基板201下方延伸。臂709將基板201提升距離903至真空吸盤710。真空吸盤710接合內部區域901，並且將基板201吸附至真空吸盤710。致動器臂709現降低並且縮回。致動器臂708現延伸載具601。臂708將載具601提升距離903至真空吸盤710。真空吸盤710之內部區域902釋放基板201。基板201及載具601藉由臂708降低。致動器臂708使基板201及載具601縮回，並且將基板201及載具601組件返回至FOUP 801a。現在，致動器臂708能夠從FOUP 801a擷取另一個載具601。沿向下方向806移動，致動器臂從下一個槽擷取下一個載具601。重複以上揭示的建構過程直到FOUP 801a之全部組件皆完成為止。一旦FOUP 801a之全部組件完成，即對FOUP 801b重複該過程。以上揭示的過程造成FOUP 801a及FOUP 801b中完全組裝的基板201及載具601組件。應理解，儘管實施例描述對準載具601，對準基板201，然後組裝載具601與基板201作為組件，但對準基板201可在對準載具601之前發生，使得在載具601對準同時基板201耦接至真空吸盤710。
經常，基板201需要在前側與背側上進行處理。翻轉裝置803允許基板201自動翻轉，使得基板201可在後續的製程中在背側上進行處理。致動器706將臂708延伸至FOUP 801a中並且從槽804a接收載具組件600。致動器臂708將載具組件600放置在對準器711上。致動器706縮回臂708。對準器711定向組件600。臂708接收對準的組件600並且將組件600朝真空吸盤710提升預定的距離903。真空吸盤710接合內部區域901以吸附基板201及接合外部區域902以吸附遮罩301。留下基板201及遮罩301，臂708降低載具601。致動器706使臂708及載具601縮回。致動器707在真空吸盤710下方延伸臂709。臂708提升距離903以接收在真空吸盤710上的基板201。真空吸盤710關閉區域901，釋放基板201。臂709降低基板201。致動器707延伸臂709以將基板201放入翻轉裝置803中。致動器707收回臂709。翻轉裝置803將基板201翻轉180度至基板201之背側。臂709延伸至翻轉裝置803中並且接收基板201。致動器臂709將基板201運輸至對準器711。致動器707縮回臂709並且對準器711對準基板201。臂709接收對齊的基板201並且提升基板201距離903至真空吸盤710。真空吸盤710接合內部區域901以吸附基板201。致動器707降低並且縮回臂709。致動器706在真空吸盤710下方延伸臂708及載具601。臂708將載具601提升至真空吸盤710。真空吸盤710解除接合內部區域901及外部區域902，從而釋放基板201及遮罩301至載具601上。致動器臂708降低整個載具組件600。致動器臂708延伸進入FOUP 801a中並且將整個載具組件600放回至槽804a中。重複以上揭示的建構過程，直到FOUP 801a之全部組件皆完成為止。一旦FOUP 801a之全部組件600皆完成基板201翻轉，即對FOUP 801b重複該過程。以上揭示的過程造成在FOUP 801a及FOUP 801b中具有翻轉的基板201的完全組裝的載具組件600。然後，載具組件600準備好在背側上處理基板201。以上揭示的過程亦可在沒有遮罩301的情況下完成，從而造成具有載具601及翻轉的基板201的組件。
在另一個實施例中，利用建構站703來拆卸載具組件600。遮罩301及載具601能夠重複用於多個處理序列。拆卸過程於裝載有完整的載具組件600的FOUP 801a及FOUP 801b開始。在一個實施例中，基板201的前側已進行了處理。在另一個實施例中，基板201的前側及背側已進行了處理。致動器臂708延伸至FOUP 801a中，並且從槽808接收載具組件600。致動器臂708將載具組件600放置至對準器711上。致動器706縮回臂708，對準器711對準組件600。臂708延伸以接收組件600。臂708提升組件600距離903至真空吸盤710。真空吸盤710接合內部區域901以吸附基板201，並且接合外部區域902以吸附基板201。然後，致動器706將臂708與載具601一起降低及縮回。致動器707在真空吸盤710下方延伸臂709。臂709被提升距離903至真空吸盤710上的基板201。真空吸盤710解除接合內部區域901，從而釋放基板201至致動器臂709上。致動器臂709降低基板201並且延伸至FOUP 802中。將基板201放入FOUP 802之最低的槽808x中。然後臂708在真空吸盤710下方延伸載具601。臂708將載具601提升距離903至真空吸盤710以接收遮罩301。真空吸盤710解除接合外部區域902，從而釋放遮罩301至載具601上。致動器臂708降低遮罩301及載具601組件，並且將遮罩301及載具601放入槽804L中。
一旦FOUP 801a之組件600完全拆卸，即對FOUP 801b重複該過程。重複該過程直到FOUP 801a及FOUP 801b之全部載具組件600已拆卸。上述拆卸過程之結果為，FOUP 801a及FOUP 801b裝載了遮罩301及載具601以及FOUP 802裝載了已處理的基板201。在拆卸過程中，載具組件600從FOUP 801a及FOUP 801b沿方向807卸載，基板201沿方向807裝載至FOUP 802中。亦可在沒有遮罩301的情況下完成以上揭示的過程，從而造成裝載有載具601的載具FOUP 801a及載具FOUP 801b以及裝載有已處理的基板201的FOUP 802。
在一個實施例中，一種方法包括：在基板之表面上設置裝置材料之基底層，該基底層具有基底層深度；以及在基底層上設置裝置材料之一或更多個心軸，其中設置一或更多個心軸的步驟包括：在基底層上方定位遮罩，該遮罩具有：具有第一遮罩深度的槽之圖案之第一部分，第一遮罩深度對應於具有第一心軸深度的心軸；及具有第二遮罩深度的槽之圖案之第二部分，第二遮罩深度對應於具有第二心軸深度的心軸；及在遮罩位於基底層上方的情況下沉積裝置材料以形成光學裝置，該光學裝置具有具基底層深度的基底層及具有第一心軸深度與第二心軸深度的一或更多個心軸。裝置材料藉由PVD沉積。裝置材料藉由CVD沉積。裝置材料藉由ALD沉積。心軸包括含二氧化鈦(TiO2)、氧化鋅(ZnO)、二氧化錫(SnO2)、鋁摻雜的氧化鋅(AZO)、氟摻雜的氧化錫(FTO)、錫酸鎘(氧化錫)(CTO)，及錫酸鋅(氧化錫)(SnZnO3)、氮化矽(Si3N4)，及非晶矽(a-Si)的材料。第二心軸深度大於第一心軸深度。第二遮罩深度大於第一遮罩深度。
在另一個實施例中，處理系統包括：工廠介面；設置在工廠介面內的第一致動器；設置在工廠介面內的第二致動器；設置在工廠介面內的對準器站；及與工廠介面耦接的翻轉裝置。工廠介面包括四個裝載端口站。翻轉裝置在四個裝載端口站中之第一裝載端口站處耦接至工廠介面。對準器設置在第一致動器與第二致動器之間。對準器站包括真空吸盤。真空吸盤包括用於吸附基板的內部區域及用於分別吸附遮罩的外部區域。對準器站包括對準器。
在另一個實施例中，一種組裝載具組件之方法包括：將載具插入對準站中，該載具上具有遮罩；對準載具與遮罩；將遮罩與載具分離；從對準站移除載具；將基板插入對準站中；使基板與遮罩接觸；及使載具與基板及遮罩接觸以產生載具組件。將遮罩與載具分離的步驟包括移動遮罩至真空吸盤，並且使遮罩吸附至真空吸盤。使基板與遮罩接觸的步驟包括移動基板至真空吸盤，並且使基板吸附至真空吸盤。使載具與基板及遮罩接觸的步驟包括從真空吸盤解除吸附基板及遮罩。該方法進一步包括在使基板與遮罩接觸之後將載具插入至對準站中。遮罩及基板之至少一部分放置在載具內。
儘管前述內容為針對本揭示案之實施例，但在不脫離本揭示案之基本範疇的情況下，可設計本揭示案之其他及進一步實施例，並且本揭示案之範疇由以下申請專利範圍來決定。
100:方法 101:操作
102:操作
200:多深度膜
201:基板
202:基底層
203:表面
204:基底層厚度
205:邊緣
208:心軸
210:第一心軸深度
211:第二心軸深度
212:頂表面
214:頂表面
301:遮罩
302:槽
303:基板支撐件
304:第二部分
305:夾環
306:第一部分
307:桿
308:第一遮罩深度
309:腔室主體
310:第二遮罩深度
311:遮罩支撐件
313:致動器
314:槽 315:第一遮罩 316:第一遮罩深度 317:第二遮罩 318:槽 319:開口 320:第二遮罩深度 400:方法 401:操作 402:操作 403:操作 404:操作 500:多深度膜 502:第一圖案化光阻 504:第一開口 506:第一厚度 508:第二圖案化光阻 510:第二厚度 512:第二開口 600:載具組件 601:載具 700:處理系統 701:傳送腔室 702:裝載閘 703:建構站 704:工廠介面 705:裝載端口站 705a:裝載端口站 705b:裝載端口站 705c:裝載端口站 705d:裝載端口站 706:致動器 707:致動器 708:致動器臂 709:致動器臂 710:真空吸盤 711:對準器 712:中心 801:前開式晶圓傳送盒（FOUP） 801a:前開式晶圓傳送盒（FOUP） 801b:前開式晶圓傳送盒（FOUP） 802:前開式晶圓傳送盒（FOUP） 803:翻轉裝置 804a:槽 804L:槽 805:槽 806:向下方向 807:方向 808:槽 900:對準器站 901:內部區域 902:外部區域 903:距離
為了可詳細地理解本揭示案之上述特徵的方式，可藉由參照實施例對以上簡要總結的本揭示案進行更特定的描述，實施例中之一些實施例繪示於附圖中。然而，應注意，附圖僅繪示示例性實施例，因此不應視為限制其範圍，並且可允許其他等效實施例。
第1圖為根據實施例的用於形成多深度膜的方法之流程圖。
第2A圖及第2B圖為根據實施例的在用於形成多深度膜的方法期間的基板之示意剖面圖。
第3A圖及第3B圖為根據實施例的在用於形成多深度膜的方法期間位於腔室內的基板之示意剖面圖。
第3C圖為根據實施例的第一遮罩之示意俯視圖。
第3D圖為根據實施例的第二遮罩之示意俯視圖。
第4圖為根據實施例的用於形成多深度膜的方法之流程圖。
第5A圖至第5C圖為根據實施例的在用於形成多深度膜的方法期間的基板之示意剖面圖。
第6圖為根據實施例的載具組件之剖面圖。
第7A圖及第7B圖為根據實施例的處理系統及離線建構工具之示意俯視圖。
第8A圖及第8B圖為根據實施例的裝載的前開式晶圓傳送盒(front opening unified pod)之示意剖面圖。
第9A圖至第9F圖為第7B圖中的建構工具在各種操作階段的示意剖面圖。
為了促進理解，在可能的情況下使用了相同的元件符號來指稱圖式中共有的相同元件。預期一個實施例之元件及特徵可有益地併入其他實施例中，而無需進一步敘述。
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無
201:基板
202:基底層
203:表面
204:基底層厚度
205:邊緣
301:遮罩
302:槽
303:基板支撐件
304:第二部分
305:夾環
306:第一部分
307:桿
308:第一遮罩深度
309:腔室主體
310:第二遮罩深度
311:遮罩支撐件
313:致動器

Claims (5)

  1. 一種形成一光學裝置之方法，包括以下步驟：在一基板之一表面上設置一裝置材料之一基底層，該基底層具有一基底層深度；以及在該基底層上設置該裝置材料之心軸，其中設置該等心軸的步驟包括：藉由在該基底層上方定位一遮罩來共同形成該等心軸，該遮罩具有：槽之一圖案之一第一部分，具有一第一遮罩深度，該第一遮罩深度對應於具有一第一心軸深度的一或更多個心軸；及槽之該圖案之一第二部分，具有一第二遮罩深度，該第二遮罩深度對應於具有一第二心軸深度的一或更多個心軸，其中該第二遮罩深度大於該第一遮罩深度使得該第二心軸深度大於該第一心軸深度；以及在該遮罩位於該基底層上方的情況下沉積該裝置材料以形成該光學裝置，該光學裝置具有具該基底層深度的該基底層及具有該第一心軸深度的該一或更多個心軸與具有該第二心軸深度的該一或更多個心軸，其中該遮罩在該第二部分的一表面高於該遮罩在該第一部分的一表面。
  2. 如請求項1所述之方法，其中該裝置材料藉由物理氣相沉積(PVD)沉積。
  3. 如請求項1所述之方法，其中該裝置材料藉由化學氣相沉積(CVD)沉積。
  4. 如請求項1所述之方法，其中該裝置材料藉由原子層沉積(ALD)沉積。
  5. 如請求項1所述之方法，其中該心軸包括含二氧化鈦(TiO2)、氧化鋅(ZnO)、二氧化錫(SnO2)、鋁摻雜的氧化鋅(AZO)、氟摻雜的氧化錫(FTO)、錫酸鎘(氧化錫)(CTO)，及錫酸鋅(氧化錫)(SnZnO3)、氮化矽(Si3N4)，及非晶矽(a-Si)的材料。
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