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TWI845840B - Substrate processing device and method for installing an ejector - Google Patents

Substrate processing device and method for installing an ejector Download PDF

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Publication number
TWI845840B
TWI845840B TW110117647A TW110117647A TWI845840B TW I845840 B TWI845840 B TW I845840B TW 110117647 A TW110117647 A TW 110117647A TW 110117647 A TW110117647 A TW 110117647A TW I845840 B TWI845840 B TW I845840B
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Prior art keywords
ejector
processing container
hook
injector
wall
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TW110117647A
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Chinese (zh)
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TW202201481A (en
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竹內千明
島田光一
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日商東京威力科創股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45568Porous nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45574Nozzles for more than one gas
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45578Elongated nozzles, tubes with holes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

提供一種能抑制噴射器傾斜的技術。 本揭露一樣態之基板處理裝置,係具備:處理容器,係具有大致圓筒形狀;噴射器,係沿著該處理容器的內壁內側而往鉛垂方向延伸;以及保持部,係將該噴射器按壓在該內壁內側來加以保持。A technique for suppressing the tilting of an ejector is provided. The present invention discloses a substrate processing device in one aspect, which comprises: a processing container having a substantially cylindrical shape; an ejector extending in a vertical direction along the inner side of an inner wall of the processing container; and a holding portion for holding the ejector by pressing it against the inner side of the inner wall.

Description

基板處理裝置及噴射器之安裝方法Substrate processing device and method for installing an ejector

本揭露係關於一種基板處理裝置及噴射器之安裝方法。The present disclosure relates to a substrate processing device and an installation method of an injector.

已知有一種基板處理裝置,係具備會收納搭載有基板之晶舟的處理容器、及會在該處理容器附近沿著該處理容器的內壁而往鉛垂方向延伸且在長邊方向上具有多個氣體孔的噴射器(例如,參照專利文獻1)。該基板處理裝置中,氣體孔係配置成會朝向處理容器附近的內壁。A substrate processing device is known, which includes a processing container for accommodating a wafer boat carrying a substrate, and an injector extending in a vertical direction along an inner wall of the processing container near the processing container and having a plurality of gas holes in a longitudinal direction (for example, see Patent Document 1). In the substrate processing device, the gas holes are arranged to face the inner wall near the processing container.

專利文獻1:日本特開2019-186335號公報Patent document 1: Japanese Patent Application Publication No. 2019-186335

本揭露係提供一種能抑制噴射器傾斜的技術。The present disclosure provides a technology for suppressing ejector tilt.

本揭露一樣態之基板處理裝置,係具備:處理容器,係具有大致圓筒形狀;噴射器,係沿著該處理容器的內壁內側而往鉛垂方向延伸;以及保持部,係將該噴射器按壓在該內壁內側來加以保持。The substrate processing device of one aspect of the present disclosure comprises: a processing container having a substantially cylindrical shape; an ejector extending in a vertical direction along the inner side of an inner wall of the processing container; and a holding portion for holding the ejector by pressing it against the inner side of the inner wall.

根據本發明,便能抑制噴射器傾斜。According to the present invention, the ejector can be restrained from tilting.

以下,一邊參照圖式一邊說明本揭露之非限定範例的實施形態。所有圖式中會針對相同或對應的構件或零件賦予相同或對應的參照符號,以省略重複說明。The following non-limiting exemplary embodiments of the present disclosure are described with reference to the drawings. The same or corresponding reference symbols are given to the same or corresponding components or parts in all drawings to omit repeated descriptions.

[基板處理裝置] 參照圖1~圖6來說明實施形態之基板處理裝置的一例。圖1係顯示實施形態之基板處理裝置的一例之概略圖。圖2係將圖1之基板處理裝置的上部一部分放大來顯示的立體圖。圖3係將圖1之基板處理裝置的上部一部分放大來顯示的剖面圖,顯示出較配置有噴射器之高度要上方而在通過內管的水平面上剖斷的剖面。圖4係將圖1之基板處理裝置的上部一部分放大來顯示的剖面圖,顯示出在通過噴射器的水平面上剖斷的剖面。圖5係將圖1之基板處理裝置的下部一部分放大來顯示的立體圖。圖6係將圖5之區域A放大的圖。[Substrate processing device] An example of a substrate processing device in an implementation form is described with reference to FIGS. 1 to 6. FIG. 1 is a schematic diagram showing an example of a substrate processing device in an implementation form. FIG. 2 is a perspective view showing an enlarged portion of the upper portion of the substrate processing device in FIG. 1. FIG. 3 is a cross-sectional view showing an enlarged portion of the upper portion of the substrate processing device in FIG. 1, showing a cross-section cut on a horizontal plane passing through an inner tube at a height above the ejector. FIG. 4 is a cross-sectional view showing an enlarged portion of the upper portion of the substrate processing device in FIG. 1, showing a cross-section cut on a horizontal plane passing through the ejector. FIG. 5 is a perspective view showing an enlarged portion of the lower portion of the substrate processing device in FIG. 1. FIG. 6 is an enlarged view of area A in FIG. 5.

基板處理裝置1係具備處理容器10、氣體供給部20、排氣部30、加熱部40、保持部100、及控制部90。The substrate processing apparatus 1 includes a processing container 10 , a gas supply unit 20 , an exhaust unit 30 , a heating unit 40 , a holding unit 100 , and a control unit 90 .

處理容器10會收納晶舟(未圖示)。晶舟會將多片基板以在高度方向上具有既定間隔之方式來加以保持。基板可以為例如半導體晶圓。處理容器10係具有內管11及外管12。內管11也稱為內筒(inner tube),係形成為下端開放而有頂的大致圓筒形狀。內管11的頂部係例如形成為平坦。外管12也稱為外筒(outer tube),係形成為下端開放且覆蓋內管11外側而有頂的大致圓筒形狀。亦即,外管12的上部係封閉。內管11及外管12係同軸狀配置而為雙重管構造。內管11及外管12係藉由例如石英等耐熱材料來加以形成。The processing container 10 will accommodate a wafer boat (not shown). The wafer boat will hold multiple substrates in a predetermined interval in the height direction. The substrate can be, for example, a semiconductor wafer. The processing container 10 has an inner tube 11 and an outer tube 12. The inner tube 11 is also called an inner tube, and is formed into a roughly cylindrical shape with an open lower end and a top. The top of the inner tube 11 is, for example, formed to be flat. The outer tube 12 is also called an outer tube, and is formed into a roughly cylindrical shape with an open lower end and a top that covers the outer side of the inner tube 11. That is, the upper part of the outer tube 12 is closed. The inner tube 11 and the outer tube 12 are coaxially arranged to form a double tube structure. The inner tube 11 and the outer tube 12 are formed by heat-resistant materials such as quartz.

內管11一側係形成有會沿著其長邊方向(鉛垂方向)來收納噴射器的噴射器收納部13。例如圖2所示,噴射器收納部13係使內管11的側壁一部分朝向外側突出而形成凸部14,且使凸部14內形成為噴射器收納部13。與噴射器收納部13對向而在內管11相反側的側壁上係沿著其長邊方向(鉛垂方向)而形成有矩形狀開口部(未圖示)。開口部係形成為可排出內管11內的氣體之氣體排出口。開口部的鉛垂方向長度係與晶舟的鉛垂方向長度相同,或者是以相較於晶舟長度而分別會往鉛垂方向更長地延伸的方式來加以形成。An ejector housing portion 13 for housing the ejector along its long side direction (in the lead vertical direction) is formed on one side of the inner tube 11. For example, as shown in FIG. 2 , the ejector housing portion 13 is formed by making a portion of the side wall of the inner tube 11 protrude outward to form a convex portion 14, and the ejector housing portion 13 is formed inside the convex portion 14. A rectangular opening portion (not shown) is formed along its long side direction (in the lead vertical direction) on the side wall opposite to the ejector housing portion 13. The opening portion is formed as a gas exhaust port for exhausting the gas in the inner tube 11. The lead vertical length of the opening portion is the same as the lead vertical length of the wafer boat, or is formed in a manner that extends longer in the lead vertical direction than the length of the wafer boat.

外管12的側壁係形成有氣體出口15。外管12下端的開口部16係透過O形環等密封構件而安裝有蓋體(未圖示)。蓋體係可開閉開口部16而將開口部16氣密地塞住來加以密閉。The side wall of the outer tube 12 is formed with a gas outlet 15. The opening 16 at the lower end of the outer tube 12 is installed with a cover (not shown) through a sealing member such as an O-ring. The cover can open and close the opening 16 and seal the opening 16 by plugging it airtightly.

氣體供給部20係具有多個氣體供給源(未圖示)及多個(例如7根)噴射器21~27。The gas supply unit 20 includes a plurality of gas supply sources (not shown) and a plurality of (eg, seven) injectors 21 to 27 .

多個氣體供給源會將各種處理氣體供給至多個噴射器21~27。各種處理氣體係包含例如用於形成膜的成膜氣體、用於蝕刻膜而加以去除的蝕刻氣體、用於清潔處理容器10內的清潔氣體、及用於吹淨處理容器10內的吹淨氣體。The plurality of gas supply sources supply various process gases to the plurality of injectors 21 to 27. The various process gases include, for example, a film forming gas for forming a film, an etching gas for etching and removing the film, a cleaning gas for cleaning the processing container 10, and a purge gas for purging the processing container 10.

噴射器21~27係在內管11之內壁內側的噴射器收納部13中以會沿著周向排成一列之方式而彼此相隔間隔來加以配置。各噴射器21~27係藉由剖面圓形之石英管所形成,會將多個氣體供給源所供給之各種處理氣體往內管11內噴出。各噴射器21~27係在內管11之內壁內側沿著內管11的長邊方向(鉛垂方向)來加以配置。各噴射器21~27在下部係彎曲成L字狀而貫通外管12側壁並往所對應之氣體供給源延伸。各噴射器21~27在上部係折返成U字狀後再往下方延伸。亦即,各噴射器21~27係構成為折返型噴射器。以下,各噴射器21~27中,係將沿著內管11的長邊方向來加以配置之部分稱為導入部21a~27a,將折返後往下方延伸之部分則稱為噴出部21b~27b。另外,將連接導入部21a~27a與噴出部21b~27b之部分稱為彎曲部21c~27c,將配置於水平方向而貫通外管12之部分則稱為水平部21d~27d。The injectors 21 to 27 are arranged in an injector housing 13 on the inner side of the inner wall of the inner tube 11 in a row and spaced apart from each other along the circumferential direction. Each injector 21 to 27 is formed by a quartz tube with a circular cross section, and injects various processing gases supplied by multiple gas supply sources into the inner tube 11. Each injector 21 to 27 is arranged on the inner side of the inner wall of the inner tube 11 along the long side direction (vertical direction) of the inner tube 11. Each injector 21 to 27 is bent into an L shape at the lower part, penetrates the side wall of the outer tube 12, and extends toward the corresponding gas supply source. Each injector 21 to 27 is folded back into a U shape at the upper part and then extends downward. That is, each of the ejectors 21 to 27 is configured as a folding ejector. Hereinafter, in each of the ejectors 21 to 27, the portion arranged along the long side direction of the inner tube 11 is referred to as the introduction portion 21a to 27a, and the portion extending downward after being folded back is referred to as the ejection portion 21b to 27b. In addition, the portion connecting the introduction portion 21a to 27a and the ejection portion 21b to 27b is referred to as the bending portion 21c to 27c, and the portion arranged in the horizontal direction and passing through the outer tube 12 is referred to as the horizontal portion 21d to 27d.

噴射器21~27係包含鉛垂方向長度不同的噴射器。The ejectors 21-27 include ejectors having different lengths in the vertical direction.

噴射器21~23,27之導入部21a~23a,27a的鉛垂方向長度係相同。另外,噴射器21~23,27之噴出部21b~23b,27b的鉛垂方向長度也係相同。噴出部21b~23b,27b的鉛垂方向長度係與晶舟的鉛垂方向長度相同,或者是以相較於晶舟長度而分別會往鉛垂方向更長地延伸的方式來加以形成。噴出部21b~23b,27b係沿著長邊方向而以既定間隔開設有多個氣體孔,構成為會將各種處理氣體供給至晶舟鉛垂方向上的所有區域。The lead-in parts 21a~23a, 27a of the injectors 21~23, 27 have the same length in the lead direction. In addition, the lead-out parts 21b~23b, 27b of the injectors 21~23, 27 also have the same length in the lead direction. The lead-out length of the injectors 21b~23b, 27b is the same as the lead-out length of the wafer boat, or is formed in a manner that extends longer in the lead direction than the length of the wafer boat. The injectors 21b~23b, 27b are provided with a plurality of gas holes at predetermined intervals along the long side direction, so as to supply various processing gases to all areas in the lead-out direction of the wafer boat.

噴射器24~26中,導入部24a~26a的鉛垂方向長度會依序變長,且分別會在處理容器10下部、中央部及上部配置有噴出部24b~26b。噴出部24b~26b係沿著長邊方向而以既定間隔開設有多個氣體孔,構成為會將各種處理氣體分別供給至處理容器10下部、中央部及上部。此外,各噴射器21~27的鉛垂方向長度並未限定於此。In the injectors 24-26, the vertical length of the introduction parts 24a-26a is gradually increased, and the ejection parts 24b-26b are respectively arranged at the lower part, the middle part and the upper part of the processing container 10. The ejection parts 24b-26b are provided with a plurality of gas holes at predetermined intervals along the longitudinal direction, and are configured to supply various processing gases to the lower part, the middle part and the upper part of the processing container 10. In addition, the vertical length of each injector 21-27 is not limited thereto.

多個氣體孔係配置成會朝向內管11附近的內壁側。各噴出部21b~27b分別會透過氣體孔來將各種處理氣體朝向內管11附近的內壁側而往水平方向噴出。所噴出的各種處理氣體在內管11附近的內壁反射後,會朝向內管11中心側(基板側)往水平方向一邊擴散一邊被供給。The plurality of gas holes are arranged to face the inner wall side near the inner tube 11. Each of the ejection parts 21b to 27b ejects various processing gases horizontally through the gas holes toward the inner wall side near the inner tube 11. After being reflected by the inner wall near the inner tube 11, the ejected processing gases are supplied while diffusing horizontally toward the center side (substrate side) of the inner tube 11.

此處,參照圖4來說明在噴射器22的噴出部22b所開設之氣體孔22h的配向角度。如圖4所示,氣體孔22h係以俯視基板處理裝置1時會相對於通過內管11中心與噴射器22的噴出部22b之中心C的徑向線L4而往導入部22a側附加角度θ之方式來加以配置。藉此,透過氣體孔22h而往水平方向噴出的各種處理氣體在內管11的內壁反射後,便會朝向內管11中心側往水平方向一邊擴散一邊被供給。另外,透過氣體孔22h而往水平方向噴出的各種處理氣體在內管11的內壁反射後,會進一步由噴射器22本身或相鄰的噴射器21,23等所反射而朝向內管11中心側往水平方向一邊擴散一邊被供給。角度θ可為例如0度~60度的範圍。另外,氣體孔22h也能以俯視基板處理裝置1時會相對於徑向線L4而往導入部22a之相反側附加角度之方式來加以配置。此情形之角度可為例如0度~60度的範圍。此外,關於在噴射器21,23~26的噴出部21b,23b~26b所開設之氣體孔,可為與氣體孔22h相同的配向角度。Here, the orientation angle of the gas hole 22h opened in the ejection part 22b of the ejector 22 is explained with reference to FIG4. As shown in FIG4, the gas hole 22h is arranged in a manner that an angle θ is added to the side of the introduction part 22a relative to the radial line L4 passing through the center of the inner tube 11 and the center C of the ejection part 22b of the ejector 22 when the substrate processing apparatus 1 is viewed from above. Thereby, various processing gases ejected in the horizontal direction through the gas hole 22h are reflected by the inner wall of the inner tube 11, and then are supplied while diffusing in the horizontal direction toward the center side of the inner tube 11. In addition, the various processing gases ejected in the horizontal direction through the gas hole 22h are further reflected by the injector 22 itself or the adjacent injectors 21, 23, etc. after being reflected by the inner wall of the inner tube 11, and are supplied while diffusing in the horizontal direction toward the center side of the inner tube 11. The angle θ may be, for example, in the range of 0 to 60 degrees. In addition, the gas hole 22h may also be configured in a manner such that an angle is added to the opposite side of the introduction portion 22a relative to the radial line L4 when the substrate processing device 1 is viewed from above. The angle in this case may be, for example, in the range of 0 to 60 degrees. In addition, the gas holes opened in the ejection portions 21b, 23b to 26b of the injectors 21, 23 to 26 may have the same orientation angle as the gas hole 22h.

排氣部30係具有排氣通道31、壓力調整閥32、及真空泵33。排氣通道31係連接於氣體出口15。壓力調整閥32及真空泵33係設在排氣通道31,會透過內管11與外管12之間的空間來將開口部所排出之內管11內的氣體加以排出。The exhaust part 30 has an exhaust passage 31, a pressure regulating valve 32, and a vacuum pump 33. The exhaust passage 31 is connected to the gas outlet 15. The pressure regulating valve 32 and the vacuum pump 33 are arranged in the exhaust passage 31, and the gas in the inner tube 11 discharged from the opening is discharged through the space between the inner tube 11 and the outer tube 12.

加熱部40會加熱處理容器10內所收納的基板。加熱部40係例如在外管12外周側形成為大致圓筒形狀以覆蓋外管12。加熱部40從能夠在鉛垂方向上獨立地控制溫度的觀點來看,較佳地係包含在鉛垂方向上被分割的多個加熱器。然而,加熱部40也可由未被分割之1個加熱器所構成。The heating unit 40 heats the substrate accommodated in the processing container 10. The heating unit 40 is formed in a substantially cylindrical shape, for example, on the outer circumference of the outer tube 12 to cover the outer tube 12. From the viewpoint of being able to independently control the temperature in the vertical direction, the heating unit 40 preferably includes a plurality of heaters divided in the vertical direction. However, the heating unit 40 may also be composed of a single heater that is not divided.

保持部100係對應於各噴射器21~27而設置,會藉由保持各噴射器21~27來抑制各噴射器21~27傾斜。關於保持部100的詳細內容將於之後說明。The holding portion 100 is provided corresponding to each of the injectors 21 to 27, and suppresses the inclination of each of the injectors 21 to 27 by holding each of the injectors 21 to 27. The details of the holding portion 100 will be described later.

控制部90會控制基板處理裝置1的整體動作。控制部90係具有CPU(Central Processing Unit)、ROM(Read Only Memory)、及RAM(Random Access Memory)。CPU會依據RAM等之記憶區域所儲存的程式庫來執行所欲的熱處理。程式庫係設定有裝置相對於程序條件的控制資訊。控制資訊可為例如氣體流量、壓力、溫度、程序時間。此外,程式庫及控制部90所使用的程式也可以記憶在例如硬碟、半導體記憶體。另外,程式庫等也可以是儲存在CD-ROM、DVD等可攜式而電腦可讀取的記憶媒體之狀態下被安裝在既定位置而加以讀取。此外,控制部90也可以有別於基板處理裝置1而設在其他裝置。The control unit 90 controls the overall operation of the substrate processing device 1. The control unit 90 has a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). The CPU executes the desired heat treatment according to the program library stored in the memory area such as the RAM. The program library is set with control information of the device relative to the program conditions. The control information may be, for example, gas flow, pressure, temperature, and program time. In addition, the program library and the program used by the control unit 90 may also be stored in, for example, a hard disk or a semiconductor memory. In addition, the program library, etc. may also be stored in a portable and computer-readable storage medium such as a CD-ROM or DVD and installed at a predetermined location for reading. In addition, the control unit 90 may also be set in other devices other than the substrate processing device 1.

[保持部] 參照圖2~圖6來說明設在基板處理裝置1而保持各噴射器21~27的保持部之一例。[Holding unit] An example of a holding unit provided in the substrate processing apparatus 1 for holding each of the injectors 21 to 27 will be described with reference to FIGS. 2 to 6 .

保持部100係分別設在多個噴射器21~27。保持部100會將各噴射器21~27按壓至內管11附近的內壁側來加以保持。保持部100係包含限制部110、突出部120、及按壓部130。The holding part 100 is provided at each of the plurality of injectors 21 to 27. The holding part 100 presses each of the injectors 21 to 27 to the inner wall side near the inner tube 11 to hold the injectors. The holding part 100 includes a restricting part 110, a protruding part 120, and a pressing part 130.

限制部110係設在第1高度位置,會限制噴射器21~27相對於處理容器10的移動。例如圖2所示,第1高度位置可為處理容器10的上部。限制部110係包含第1鉤件111及卡合部112。The limiting portion 110 is disposed at a first height position, and limits the movement of the injectors 21-27 relative to the processing container 10. For example, as shown in FIG. 2 , the first height position may be the upper portion of the processing container 10. The limiting portion 110 includes a first hook 111 and a locking portion 112.

第1鉤件111在第1高度位置係具有從內管11附近的內壁往內管11的中心方向延伸而會在中心側朝向噴射器21~27(噴出部21b~27b)彎曲的L字形狀。第1鉤件111係由與內管11相同材料,例如石英所形成,且熔接固定在內管11附近的內壁。The first hook 111 has an L-shape extending from the inner wall near the inner tube 11 toward the center of the inner tube 11 at the first height and bending toward the ejectors 21 to 27 (ejection parts 21b to 27b) at the center side. The first hook 111 is made of the same material as the inner tube 11, such as quartz, and is welded to the inner wall near the inner tube 11.

卡合部112在第1高度位置係設成會從噴射器21~27往第1鉤件111側延伸而能與第1鉤件111卡合。如圖3及圖4所示,卡合部112具有錐面112a,係以會隨著接近第1鉤件111側而進入第1鉤件111的L字內側之方式來加以傾斜。藉此,噴射器21~27被按壓至第1鉤件111側時,卡合部112便會與第1鉤件111卡合,使噴射器21~27被按壓至內管11附近的內壁側而使後述突出部120接觸於內管11附近的內壁。如此般,由於內管11與噴射器21~27會在第1鉤件111與卡合部112的接觸部P1及內管11附近的內壁與突出部120的接觸部P2之2處接觸,因此可限制噴射器21~27的移動。其結果,便可抑制噴射器21~27之噴出部21b~27b上所開設的氣體孔在噴出氣體時所產生的反作用力、噴射器21~27本身重量所致之旋轉等所造成的噴射器21~27傾斜。The engaging portion 112 is arranged to extend from the ejector 21 to 27 to the first hook 111 side at the first height position and can engage with the first hook 111. As shown in FIG. 3 and FIG. 4, the engaging portion 112 has a tapered surface 112a, which is tilted in a manner that it enters the L-shaped inner side of the first hook 111 as it approaches the first hook 111 side. Thereby, when the ejector 21 to 27 is pressed to the first hook 111 side, the engaging portion 112 is engaged with the first hook 111, so that the ejector 21 to 27 is pressed to the inner wall side near the inner tube 11 and the protrusion 120 described later contacts the inner wall near the inner tube 11. In this way, since the inner tube 11 and the ejector 21-27 are in contact at two locations, namely, the contact portion P1 between the first hook 111 and the engaging portion 112 and the contact portion P2 between the inner wall near the inner tube 11 and the protruding portion 120, the movement of the ejector 21-27 can be restricted. As a result, the ejector 21-27 can be restrained from tilting due to the reaction force generated when the gas holes opened on the ejection portions 21b-27b of the ejector 21-27 eject gas, the rotation due to the weight of the ejector 21-27 itself, and the like.

突出部120係設在較第1高度位置要高的位置,例如噴射器21~27的彎曲部21c~27c上之內管11附近的內壁側。然而,突出部120亦可設在例如第1高度位置,也可設在較第1高度位置要低的位置。此情形,突出部120可設在導入部21a~27a,亦可設在噴出部21b~27b,也可設在導入部21a~27a與噴出部21b~27b兩者。突出部120係具有會從噴射器21~27表面突出的半球狀,會接觸於內管11附近的內壁。突出部120在卡合部112卡合於第1鉤件111而將噴射器21~27按壓至內管11附近的內壁側時會與內管11附近的內壁接觸。例如,噴射器21~27下端的彎曲成L字狀部分(導入部21a~27a與水平部21d~27d的連接部分)之彎曲角度係形成為較90度稍微要小的角度(銳角)。此外,藉由在使突出部120抵接於內管11附近的內壁之狀態下由螺帽等來固定水平部21d~27d,便可將噴射器21~27安裝在內管11。如此般噴射器21~27會在2點被固定,因此可抑制噴射器21~27傾斜。另外,藉由設置突出部120,噴射器21~27與內管11便會形成點接觸,因此可防止成膜所致之噴射器21~27與內管11間的貼附。另一方面,未設置突出部120的情形,噴射器21~27與內管11會形成線或面接觸,會有噴射器21~27因成膜而貼附於內管11的情形。The protrusion 120 is provided at a position higher than the first height position, for example, on the inner wall side near the inner tube 11 on the curved portions 21c~27c of the ejectors 21~27. However, the protrusion 120 may be provided at, for example, the first height position, or may be provided at a position lower than the first height position. In this case, the protrusion 120 may be provided at the introduction portion 21a~27a, or at the ejection portion 21b~27b, or at both the introduction portion 21a~27a and the ejection portion 21b~27b. The protrusion 120 has a hemispherical shape that protrudes from the surface of the ejectors 21~27, and contacts the inner wall near the inner tube 11. When the engaging portion 112 is engaged with the first hook 111 and the ejector 21 to 27 is pressed to the inner wall side near the inner tube 11, the protrusion 120 contacts the inner wall near the inner tube 11. For example, the bending angle of the L-shaped portion (the connecting portion between the introduction portion 21a to 27a and the horizontal portion 21d to 27d) at the lower end of the ejector 21 to 27 is formed to be slightly smaller than 90 degrees (sharp angle). In addition, by fixing the horizontal portion 21d to 27d with a nut or the like while the protrusion 120 is in contact with the inner wall near the inner tube 11, the ejector 21 to 27 can be installed in the inner tube 11. In this way, the ejector 21 to 27 is fixed at two points, so that the ejector 21 to 27 can be suppressed from tilting. In addition, by providing the protrusion 120, the ejectors 21 to 27 and the inner tube 11 form point contact, thereby preventing the ejectors 21 to 27 and the inner tube 11 from being attached to each other due to film formation. On the other hand, if the protrusion 120 is not provided, the ejectors 21 to 27 and the inner tube 11 form line or surface contact, and the ejectors 21 to 27 may be attached to the inner tube 11 due to film formation.

按壓部130係設在較第1高度位置要下方的第2高度位置,會將噴射器21~27往限制部110會限制噴射器21~27相對於處理容器10移動的方向按壓。按壓部130係包含第2鉤件131及制動件132。The pressing part 130 is disposed at a second height position lower than the first height position, and presses the ejectors 21-27 in a direction in which the restricting part 110 restricts the ejectors 21-27 from moving relative to the processing container 10. The pressing part 130 includes a second hook 131 and a stopper 132.

第2鉤件131在第2高度位置係具有從內管11附近的內壁往內管11的中心方向延伸而會在中心側朝向噴射器21~27(導入部21a~27a)彎曲的L字形狀。第2鉤件131係由與內管11相同材料,例如石英所形成,且熔接固定在內管11附近的內壁。第2鉤件131在內管11周向係夾著噴射器21~27而設在第1鉤件111相反側,第2鉤件131的彎曲方向與第1鉤件111的彎曲方向係相反方向。The second hook 131 has an L-shape extending from the inner wall near the inner tube 11 toward the center of the inner tube 11 at the second height position and bending toward the ejectors 21 to 27 (introduction parts 21a to 27a) at the center side. The second hook 131 is made of the same material as the inner tube 11, such as quartz, and is welded and fixed to the inner wall near the inner tube 11. The second hook 131 is arranged on the opposite side of the first hook 111 in the circumferential direction of the inner tube 11, sandwiching the ejectors 21 to 27, and the bending direction of the second hook 131 is opposite to the bending direction of the first hook 111.

制動件132係插入於噴射器21~27(導入部21a~27a)與第2鉤件131之間而會將噴射器21~27往離開第2鉤件131的方向按壓。如圖6所示,制動件132係包含寬幅部132a、窄幅部132b、及錐部132c。The brake member 132 is inserted between the ejectors 21-27 (introduction parts 21a-27a) and the second hook 131 to press the ejectors 21-27 in a direction away from the second hook 131. As shown in FIG6 , the brake member 132 includes a wide portion 132a, a narrow portion 132b, and a tapered portion 132c.

寬幅部132a係形成為固定寬度W61。寬幅部132a的寬度W61會較噴射器21~27安裝在處理容器10狀態下之噴射器21~27與第2鉤件131的L字內側之間的長度L6要長。The width portion 132a is formed to have a fixed width W61. The width W61 of the width portion 132a is longer than the length L6 between the injectors 21-27 and the inner side of the L-shape of the second hook 131 when the injectors 21-27 are installed in the processing container 10.

窄幅部132b係形成為固定寬度W62。窄幅部132b的寬度W62會較噴射器21~27安裝在處理容器10狀態下之噴射器21~27與第2鉤件131的L字內側之間的長度L6要短。 The narrow portion 132b is formed to have a fixed width W62. The width W62 of the narrow portion 132b is shorter than the length L6 between the injectors 21-27 and the inner side of the L-shape of the second hook 131 when the injectors 21-27 are installed in the processing container 10.

錐部132c係形成在寬幅部132a與窄幅部132b之間。錐部132c係形成為寬度會從寬幅部132a的寬度W61連續地縮小成窄幅部132b的寬度W62。換句話說,錐部132c係形成為前端會從上方朝向下方變細。 The tapered portion 132c is formed between the wide portion 132a and the narrow portion 132b. The tapered portion 132c is formed so that the width is continuously reduced from the width W61 of the wide portion 132a to the width W62 of the narrow portion 132b. In other words, the tapered portion 132c is formed so that the front end is tapered from the top to the bottom.

相關制動件132在從較第2高度位置要上方朝向下方插入於噴射器21~27與第2鉤件131之間時,會對噴射器21~27施加離開第2鉤件131的方向之力。藉此,卡合部112便會在第1高度位置卡合於第1鉤件111。此外,圖5及圖6中係顯示噴射器21~23,26,27與第2鉤件131之間插入有制動件132,噴射器24,25與第2鉤件131之間則未插入有制動件132的狀態。 When the relevant brake 132 is inserted between the ejectors 21-27 and the second hook 131 from the upper side to the lower side at the second height position, a force in the direction of leaving the second hook 131 is applied to the ejectors 21-27. As a result, the engaging portion 112 is engaged with the first hook 111 at the first height position. In addition, FIG. 5 and FIG. 6 show the state where the brake 132 is inserted between the ejectors 21-23, 26, 27 and the second hook 131, and the brake 132 is not inserted between the ejectors 24, 25 and the second hook 131.

如以上所說明,根據實施形態的基板處理裝置1,係具備會包含限制部110及按壓部130的保持部100。此外,限制部110係設在第1高度位置,會限制噴射器21~27相對於處理容器10的移動。按壓部130係設在較第1高度位置要下方的第2高度位置,會將噴射器21~27往限制部110會限制噴射器21~27相對於處理容器10移動的方向按壓。藉此,藉由按壓部130來將噴射器21~27往限制部110會限制噴射器21~27相對於處理容器10移動的方向按壓,便能藉由限制部110來限制噴射器21~27相對於處理容器10的移動。其結果,便可抑制噴射器21~27之噴出部21b~27b上所開設的氣體孔在噴出氣體時所產生的反作用力、噴射器21~27本身重量所致之旋轉等所造成的噴射器21~27傾斜。 As described above, the substrate processing apparatus 1 according to the embodiment includes the holding portion 100 including the limiting portion 110 and the pressing portion 130. The limiting portion 110 is disposed at a first height position to limit the movement of the injectors 21 to 27 relative to the processing container 10. The pressing portion 130 is disposed at a second height position lower than the first height position to press the injectors 21 to 27 in the direction in which the limiting portion 110 limits the movement of the injectors 21 to 27 relative to the processing container 10. Thus, by pressing the ejector 21-27 in the direction in which the restricting portion 110 restricts the movement of the ejector 21-27 relative to the processing container 10, the restricting portion 110 can restrict the movement of the ejector 21-27 relative to the processing container 10. As a result, the ejector 21-27 can be restrained from tilting due to the reaction force generated by the gas holes opened on the ejection portions 21b-27b of the ejector 21-27 when ejecting gas, the rotation caused by the weight of the ejector 21-27 itself, etc.

參照圖7及圖8來說明按壓部的變形例。圖7係顯示按壓部之變形例的圖。圖8係顯示圖7之按壓部的動作之一例的圖。 Referring to FIG. 7 and FIG. 8 , a variation of the pressing portion is described. FIG. 7 is a diagram showing a variation of the pressing portion. FIG. 8 is a diagram showing an example of the action of the pressing portion of FIG. 7 .

按壓部230係設在較第1高度位置要下方的第2高度位置,會將噴射器21~27往限制部110會限制噴射器21~27相對於處理容器10移動的方向按壓。按壓部230係包含第2鉤件231及制動件232。 The pressing part 230 is disposed at a second height position lower than the first height position, and presses the ejectors 21 to 27 in a direction in which the limiting part 110 limits the movement of the ejectors 21 to 27 relative to the processing container 10. The pressing part 230 includes a second hook 231 and a brake 232.

第2鉤件231在第2高度位置係具有從內管11附近的內壁往內管11的中心方向延伸而會在中心側朝向噴射器21~27(導入部21a~27a)彎曲的L字形狀。第2鉤件231係由與內管11相同材料,例如石英所形成,且熔接固定在內管11附近的內壁。第2鉤件231係在內管11周向夾著噴射器21~27而設在第1鉤件111相反側,第2鉤件231的彎曲方向與第1鉤件111的彎曲方向係相反方向。 The second hook 231 has an L-shape extending from the inner wall near the inner tube 11 toward the center of the inner tube 11 at the second height position and bending toward the ejectors 21 to 27 (introduction parts 21a to 27a) at the center side. The second hook 231 is made of the same material as the inner tube 11, such as quartz, and is welded and fixed to the inner wall near the inner tube 11. The second hook 231 is arranged on the opposite side of the first hook 111, sandwiching the ejectors 21 to 27 in the circumferential direction of the inner tube 11, and the bending direction of the second hook 231 is opposite to the bending direction of the first hook 111.

制動件232係插入於噴射器21~27(導入部21a~27a)與第2鉤件231之間而會將噴射器21~27往離開第2鉤件231的方向按壓。制動件232係包含錐部232a、窄幅部232b、缺口部232c、及落下防止部232d。如圖8(a)所示,制動件232係在插入於噴射器21~27與第2鉤件231之間的狀態下,重心G會位於較第2鉤件231下端要下方,例如窄幅部232b。 The brake 232 is inserted between the ejector 21~27 (introduction part 21a~27a) and the second hook 231 and presses the ejector 21~27 in the direction away from the second hook 231. The brake 232 includes a conical part 232a, a narrow part 232b, a notch part 232c, and a fall prevention part 232d. As shown in FIG8(a), when the brake 232 is inserted between the ejector 21~27 and the second hook 231, the center of gravity G is located below the lower end of the second hook 231, such as the narrow part 232b.

錐部232a係形成為寬度會從第1寬度W81連續地縮小成第2寬度W82。換句話說,錐部232a係形成為前端會從上方朝向下方變細。第1寬度W81會較噴射器21~27安裝在處理容器10狀態下之噴射器21~27與第2鉤件231的L字內側之間的長度之第1長度L81要長。第2寬度W82則會較第1長度L81要短。 The tapered portion 232a is formed so that the width continuously decreases from the first width W81 to the second width W82. In other words, the tapered portion 232a is formed so that the front end becomes thinner from the top to the bottom. The first width W81 is longer than the first length L81, which is the length between the injectors 21 to 27 and the inner side of the L shape of the second hook 231 when the injectors 21 to 27 are installed in the processing container 10. The second width W82 is shorter than the first length L81.

窄幅部232b會與錐部232a連續地形成在錐部232a下方。窄幅部232b係形成為固定寬度W82。 The narrow width portion 232b is formed continuously with the tapered portion 232a below the tapered portion 232a. The narrow width portion 232b is formed to have a fixed width W82.

缺口部232c會與窄幅部232b連續地形成在窄幅部232b下方。缺口部232c係形成為固定寬度W83。缺口部232c的寬度W83會較噴射器21~27安裝在處理容器10狀態下之噴射器21~27與第2鉤件231的L字內側之間的長度之第2長度L82要短。缺口部232c的高度H83則會較第2鉤件231的高度H81要高。藉此,如圖8(b)所示,藉由使缺口部232c上昇至與第2鉤件231重疊的高度位置,便能使第2鉤件231往前側(內管11中心側)移動,而可拆裝制動件232。The notch 232c is formed continuously with the narrow width portion 232b below the narrow width portion 232b. The notch 232c is formed to have a fixed width W83. The width W83 of the notch 232c is shorter than the second length L82 of the length between the injectors 21-27 and the inner side of the L-shape of the second hook 231 when the injectors 21-27 are installed in the processing container 10. The height H83 of the notch 232c is higher than the height H81 of the second hook 231. 8 (b), by raising the notch portion 232c to a height position overlapping the second hook 231, the second hook 231 can be moved forward (toward the center side of the inner tube 11), and the brake member 232 can be disassembled.

落下防止部232d會與缺口部232c連續地形成在缺口部232c下方。落下防止部232d係形成為固定寬度W84。落下防止部232d的寬度W84會較第1長度L81要短,且較第2長度L82要長。藉此,如圖8(c)所示,在制動件232上昇至上限位置的狀態下,從內管11中心側俯視時第2鉤件231與落下防止部232d會重疊而限制制動件232往內管11中心側移動。因此,在執行基板處理裝置1所致之處理時,即使制動件232因為氣體的流動等而上昇至上限位置的情形,仍可以防止制動件232往內管11中心側脫離而落下。The drop prevention portion 232d is formed continuously with the notch portion 232c below the notch portion 232c. The drop prevention portion 232d is formed to have a fixed width W84. The width W84 of the drop prevention portion 232d is shorter than the first length L81 and longer than the second length L82. As shown in FIG8(c), when the brake member 232 is raised to the upper limit position, the second hook 231 and the drop prevention portion 232d overlap when viewed from the center side of the inner tube 11, thereby restricting the brake member 232 from moving toward the center side of the inner tube 11. Therefore, when the substrate processing apparatus 1 is performing processing, even if the brake member 232 is lifted to the upper limit position due to the flow of gas, etc., the brake member 232 can be prevented from being separated from the center side of the inner tube 11 and falling.

相關制動件232在從較第2高度位置要上方朝向下方插入於噴射器21~27與第2鉤件231之間時,會對噴射器21~27施加離開第2鉤件231的方向之力。藉此,卡合部112便會在第1高度位置卡合於第1鉤件111。When the brake member 232 is inserted between the ejector 21-27 and the second hook 231 from above the second height position to below, a force in a direction away from the second hook 231 is applied to the ejector 21-27. Thus, the engaging portion 112 is engaged with the first hook 111 at the first height position.

應認為本說明書所揭露之實施形態在所有方面皆為例示而非用來加以限制。上述實施形態在不脫離申請專利範圍及其主旨的範疇內,也能以各種形態來加以省略、置換、變更。The embodiments disclosed in this specification are illustrative in all aspects and are not intended to be limiting. The embodiments described above may be omitted, replaced, or modified in various forms without departing from the scope of the patent application and its gist.

上述實施形態中,雖然是舉出各噴射器21~27係折返型噴射器之情形為範例來加以說明,但本揭露並不限定於此。例如,多個噴射器21~27的一部分或全部也可以是沒有在上部折返的非折返型噴射器。In the above-mentioned embodiment, although the case where each ejector 21-27 is a return ejector is cited as an example for explanation, the present disclosure is not limited thereto. For example, a part or all of the ejectors 21-27 may also be non-return ejectors that are not returned at the upper part.

上述實施形態中,雖然是舉出具備7根噴射器21~27的基板處理裝置1為範例來加以說明,但本揭露並不限定於此。例如,也可以是只具備1根噴射器的基板處理裝置。另外,也可以是具備2~6根、8根以上噴射器的基板處理裝置。In the above embodiment, although a substrate processing apparatus 1 having seven injectors 21 to 27 is used as an example for explanation, the present disclosure is not limited thereto. For example, a substrate processing apparatus having only one injector may be used. In addition, a substrate processing apparatus having 2 to 6 or more injectors may be used.

1:基板處理裝置 10:處理容器 21~27:噴射器 100:保持部 110:限制部 111:第1鉤件 112:卡合部 112a:錐面 130:按壓部 131:第2鉤件 132:制動件 132c:錐部 231:第2鉤件 232:制動件 232a:錐部 232d:落下防止部1: substrate processing device 10: processing container 21~27: injector 100: holding part 110: limiting part 111: first hook 112: engaging part 112a: conical surface 130: pressing part 131: second hook 132: brake part 132c: conical part 231: second hook 232: brake part 232a: conical part 232d: falling prevention part

圖1係顯示實施形態之基板處理裝置的一例之概略圖。 圖2係將圖1之基板處理裝置的上部一部分放大來顯示的立體圖。 圖3係將圖1之基板處理裝置的上部一部分放大來顯示的剖面圖(1)。 圖4係將圖1之基板處理裝置的上部一部分放大來顯示的剖面圖(2)。 圖5係將圖1之基板處理裝置的下部一部分放大來顯示的立體圖。 圖6係將圖5之區域A放大的圖。 圖7係顯示按壓部之變形例的圖。 圖8係顯示圖7之按壓部的動作之一例的圖。FIG. 1 is a schematic diagram showing an example of a substrate processing device of an implementation form. FIG. 2 is a perspective view showing a portion of the upper part of the substrate processing device of FIG. 1 in an enlarged manner. FIG. 3 is a cross-sectional view (1) showing a portion of the upper part of the substrate processing device of FIG. 1 in an enlarged manner. FIG. 4 is a cross-sectional view (2) showing a portion of the upper part of the substrate processing device of FIG. 1 in an enlarged manner. FIG. 5 is a perspective view showing a portion of the lower part of the substrate processing device of FIG. 1 in an enlarged manner. FIG. 6 is a view showing an enlarged view of area A of FIG. 5. FIG. 7 is a view showing a modified example of a pressing portion. FIG. 8 is a view showing an example of the action of the pressing portion of FIG. 7.

1:基板處理裝置 1: Substrate processing equipment

10:處理容器 10: Processing container

11:內管 11: Inner tube

12:外管 12: External pipe

13:噴射器收納部 13: Injector storage unit

14:凸部 14: convex part

15:氣體出口 15: Gas outlet

16:開口部 16: Opening

20:氣體供給部 20: Gas supply unit

21~27:噴射器 21~27: Injector

30:排氣部 30: Exhaust section

31:排氣通道 31: Exhaust channel

32:壓力調整閥 32: Pressure regulating valve

33:真空泵 33: Vacuum pump

40:加熱部 40: Heating section

90:控制部 90: Control Department

100:保持部 100:Maintenance Department

110:限制部 110: Restriction Department

130:按壓部 130: Pressing part

Claims (8)

一種基板處理裝置,係具備:處理容器,係具有大致圓筒形狀;噴射器,係沿著該處理容器的內壁內側而往鉛垂方向延伸;以及保持部,係將該噴射器按壓在該內壁內側來加以保持;該保持部係包含:限制部,係設在第1高度位置,會限制該噴射器相對於該處理容器的移動;以及按壓部,係設在較該第1高度位置要下方的第2高度位置,會將該噴射器往該噴射器相對於該處理容器的移動被該限制部所限制的方向按壓;該噴射器係往上方延伸而在上部折返後再往下方延伸的折返型噴射器;該限制部係設在該噴射器往下方延伸的部分;該按壓部係設在該噴射器往上方延伸的部分。 A substrate processing device comprises: a processing container having a substantially cylindrical shape; an ejector extending in a vertical direction along the inner side of an inner wall of the processing container; and a holding portion for holding the ejector by pressing the ejector against the inner side of the inner wall; the holding portion comprising: a limiting portion disposed at a first height position for limiting movement of the ejector relative to the processing container; and a pressing portion The second height position, which is set lower than the first height position, presses the ejector in the direction in which the movement of the ejector relative to the processing container is restricted by the restricting portion; the ejector is a return-type ejector that extends upward and then folds back at the upper portion and then extends downward; the restricting portion is set at the portion of the ejector extending downward; and the pressing portion is set at the portion of the ejector extending upward. 如申請專利範圍第1項之基板處理裝置,其中該限制部係包含:L字形狀的第1鉤件,係從該處理容器的內壁往該處理容器的中心方向延伸而會在中心側朝向該噴射器彎曲;以及卡合部,係從該噴射器往該第1鉤件側延伸而能與該第1鉤件卡合。 For example, in the substrate processing device of item 1 of the patent application, the limiting part includes: an L-shaped first hook extending from the inner wall of the processing container toward the center of the processing container and bending toward the ejector at the center side; and a locking part extending from the ejector toward the side of the first hook and capable of locking with the first hook. 如申請專利範圍第2項之基板處理裝置,其中該卡合部係具有會與該第1鉤件卡合的錐面。 For example, in the substrate processing device of item 2 of the patent application, the engaging portion has a conical surface that engages with the first hook. 如申請專利範圍第1至3項中任一項之基板處理裝置,其中該按壓部係包含: L字形狀的第2鉤件,係從該處理容器的內壁往該處理容器的中心方向延伸而會在中心側朝向該噴射器彎曲;以及制動件,係插入於該噴射器與該第2鉤件之間而會將該噴射器往離開該第2鉤件的方向按壓。 A substrate processing device according to any one of items 1 to 3 of the patent application, wherein the pressing portion comprises: An L-shaped second hook extending from the inner wall of the processing container toward the center of the processing container and bending toward the ejector at the center side; and a brake inserted between the ejector and the second hook to press the ejector in a direction away from the second hook. 如申請專利範圍第4項之基板處理裝置,其中該制動件係包含前端會從上方朝向下方變細的錐部;該錐部係插入於該噴射器與該第2鉤件之間。 For example, in the substrate processing device of item 4 of the patent application, the brake member includes a cone whose front end tapers from top to bottom; the cone is inserted between the ejector and the second hook. 如申請專利範圍第5項之基板處理裝置,其中該制動件係在較該錐部要下方包含會限制該制動件往該處理容器中心側移動的落下防止部。 For example, in the substrate processing device of item 5 of the patent application, the brake member includes a fall prevention portion below the conical portion that limits the movement of the brake member toward the center side of the processing container. 如申請專利範圍第1至3項中任一項之基板處理裝置,其中該噴射器係形成有會沿著長邊方向而開口的多個氣體孔;該多個氣體孔係配置成會朝向該處理容器附近的內壁側。 A substrate processing device as claimed in any one of items 1 to 3 of the patent application, wherein the injector is formed with a plurality of gas holes opening along the long side direction; the plurality of gas holes are arranged to face the inner wall side near the processing container. 一種噴射器之安裝方法,係將噴射器安裝在具有大致圓筒形狀的處理容器,其包含:以會沿著該處理容器的內壁內側而往鉛垂方向延伸之方式來配置噴射器的工序;以及將該噴射器按壓在該內壁內側來加以保持的工序;該將該噴射器按壓在該內壁內側來加以保持的工序係包含:限制工序,係在第1高度位置上限制該噴射器相對於該處理容器的移動;以及按壓工序,係在較該第1高度位置要下方的第2高度位置上將該噴射器往該噴射器相對於該處理容器的移動被該限制工序所限制的方向按壓; 該噴射器係往上方延伸而在上部折返後再往下方延伸的折返型噴射器;該第1高度位置係位於該噴射器往下方延伸的部分;該第2高度位置係位於該噴射器往上方延伸的部分。 A method for installing an injector is to install the injector in a processing container having a substantially cylindrical shape, comprising: a step of arranging the injector so as to extend in a vertical direction along an inner side of an inner wall of the processing container; and a step of pressing the injector against the inner side of the inner wall to hold the injector; the step of pressing the injector against the inner side of the inner wall to hold the injector comprises: a limiting step of limiting the injector at a first height position relative to the processing container; The container is moved; and a pressing process is to press the ejector at a second height position lower than the first height position in a direction in which the movement of the ejector relative to the processing container is restricted by the restricting process; the ejector is a return type ejector that extends upward and then folds back at the upper part and then extends downward; the first height position is located at the portion of the ejector extending downward; the second height position is located at the portion of the ejector extending upward.
TW110117647A 2020-05-26 2021-05-17 Substrate processing device and method for installing an ejector TWI845840B (en)

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