TWI845403B - Display device and method for manufacturing the same - Google Patents

Abstract

A display device which includes a pixel array substrate, a plurality of light-emitting components, a wavelength conversion layer and a light diverging structure is provided. The light-emitting components are disposed in an array and connected to the pixel array substrate, while the light-emitting components are located between the wavelength conversion layer and the pixel array substrate. The wavelength conversion layer includes a plurality of wavelength conversion materials and a plurality of light-transmitting materials which are spaced from each other. The wavelength conversion materials overlap some of the light-emitting components respectively while the light-transmitting materials overlap the others respectively. The light diverging structure is disposed on the pixel array substrate and overlaps the light-transmitting materials but the wavelength conversion materials. Furthermore, the transmittance of light having a wavelength range from 450nm to 495nm to the light-transmitting materials is greater than to the wavelength conversion materials.

Description

Display device and manufacturing method thereof

The present invention relates to a display device and a manufacturing method of the display device, and in particular to a display device with a light wavelength conversion layer.

At present, some display devices use color conversion technology as a way to present the colors of sub-pixels (such as RGB pixels). For example, quantum dot (QD) display technology can use blue light to excite quantum dot materials, causing the quantum dot materials to emit various colors of light with a narrow wavelength spectrum, thereby achieving a wide color gamut (gamut) effect. Because this technology has used blue light as the excitation light source, the light does not need to be converted by the quantum dot material to form a blue sub-pixel. However, since the light that forms the blue sub-pixel does not pass through the quantum dot material, its light directivity is higher than the scattered light emitted after the quantum dot color conversion. This difference causes the viewing angle of the blue sub-pixel to be smaller than that of the sub-pixels of other colors, which in turn affects the color accuracy of the display device.

An embodiment of the present invention provides a display device that can enhance the viewing angle of sub-pixels that have not undergone color conversion, thereby improving the color accuracy of the display device.

At least one embodiment of the present invention provides a display device, which includes a pixel array substrate; a plurality of light-emitting elements arranged in an array on the pixel array substrate and electrically connected to the pixel array substrate; a wavelength conversion array layer disposed on the pixel array substrate, wherein the light-emitting elements are located between the wavelength conversion array layer and the pixel array substrate. The wavelength conversion array layer includes a plurality of wavelength conversion materials and a plurality of light-transmitting materials separated from the wavelength conversion materials. The wavelength conversion materials overlap with some of the light-emitting elements, and the light-transmitting materials overlap with other light-emitting elements. The display device further includes a plurality of light scattering structures disposed on the wavelength conversion array layer, wherein the light scattering structures overlap with the light-transmitting material, but the light scattering structures do not overlap with the wavelength conversion material. The light having a wavelength range of 400nm to 495nm has a greater penetration rate through the light-transmitting material than the light having a wavelength range of 400nm to 495nm.

In at least one embodiment of the present invention, each of the light diverging structures includes a plurality of plano-convex lenses, and the plano-convex lenses protrude toward the wavelength conversion array layer. The width of each of the plano-convex lenses ranges from 1 μm to 10 μm.

In at least one embodiment of the present invention, the display device further includes a black matrix layer located between the light scattering structure and the wavelength conversion array layer; and a light-transmitting layer located between the black matrix layer and the light scattering structure and covering the convex surface of the plano-convex lens.

In at least one embodiment of the present invention, the refractive index of the light-transmitting layer is smaller than the refractive index of the plano-convex lens.

In at least one embodiment of the present invention, the display device further includes a black matrix layer located on the wavelength conversion array layer, the black matrix layer has a plurality of openings, and the light scattering structures are respectively located in the openings. The display device further includes a plurality of filter layers distributed in the openings of the black matrix layer and covering the convex surface of the plano-convex lens.

In at least one embodiment of the present invention, the wavelength conversion material includes a red quantum dot material.

In at least one embodiment of the present invention, part of the wavelength conversion material further includes green quantum dot material.

An embodiment of the present invention further provides a method for manufacturing a display device, comprising providing a pixel array substrate; disposing a plurality of light emitting elements on the pixel array substrate, and the light emitting elements are electrically connected to the pixel array substrate; forming a photoresist layer on an opposite substrate; patterning the photoresist layer using a semi-transparent mask as a mask to form a plurality of light scattering structures; forming a wavelength conversion array layer on the light scattering structure, and the wavelength conversion array layer includes a plurality of wavelength conversion materials and a plurality of light-transmitting materials separated from each other; and disposing the opposite substrate on the light emitting element after forming the wavelength conversion array layer, so that the light scattering structure and the wavelength conversion array layer are located between the opposite substrate and the light emitting element. The wavelength conversion material overlaps with some of the light emitting elements, and the light transmitting material overlaps with other light emitting elements. The light scattering structure overlaps with the light transmitting material, but the light scattering structure does not overlap with the wavelength conversion material.

In at least one embodiment of the present invention, the semi-transparent light mask is a half-tone light mask.

In at least one embodiment of the present invention, the manufacturing method of the display device further includes forming a light-transmitting layer on the opposite substrate after forming the light-scattering structure. The light-transmitting layer covers a surface of the light-scattering structure, and the refractive index of the light-transmitting layer is less than the refractive index of the photoresist layer.

In at least one embodiment of the present invention, the manufacturing method of the display device further includes forming a black matrix layer on the opposite substrate, and the black matrix layer covers the gap between the wavelength conversion material and the light-transmitting material.

In the above embodiment, the light scattering structure overlaps the light-transmitting material of the wavelength conversion array layer, but does not overlap the wavelength conversion material of the wavelength conversion array layer. The light scattering structure deflects the light after passing through the light-transmitting material, thereby increasing the viewing angle of the light. In this way, the difference in viewing angle between the light passing through the wavelength conversion material and the light passing through the light-transmitting material can be reduced, thereby improving the color difference of the viewing angle.

The present invention will be described in detail with the following embodiments. It should be noted that the following description of the embodiments of the present invention is only used for illustration and is not intended to disclose all embodiments in detail or to limit the specific embodiments of the present invention. For example, the description of "a first feature formed on a second feature" includes a variety of implementations, including the first feature and the second feature directly contacting each other, and also including additional features formed between the first feature and the second feature so that the two do not directly contact each other. In addition, the same component symbols used in the drawings and the specification will represent the same or similar components as much as possible.

Spatially relative terms such as "inferior," "lower than," "below," "above," and related terms are used herein to simply describe the relationship of an element or feature as shown in the figure to another element or feature. These spatially relative terms cover different orientations when the device is in use or operating in addition to the orientation depicted in the figure. In addition, when the element is rotatable (rotated 90 degrees or other angles), the spatially relative descriptors used herein can also be interpreted accordingly.

In the following text, in order to clearly present the technical features of the present invention, the dimensions (e.g., length, width, thickness, and depth) of the elements (e.g., layers, films, substrates, and regions, etc.) in the drawings will be enlarged in unequal proportions. Therefore, the description and explanation of the embodiments below are not limited to the dimensions and shapes presented by the elements in the drawings, but should cover the dimensions, shapes, and deviations therefrom caused by actual processes and/or tolerances. For example, the flat surface shown in the drawings may have rough and/or nonlinear features, and the sharp corners shown in the drawings may be rounded. Therefore, the elements presented in the drawings of the present invention are mainly used for illustration, and are not intended to accurately depict the actual shapes of the elements, nor are they intended to limit the scope of the patent application of the present invention.

Furthermore, the words "approximately", "approximately" or "substantially" used in the present case not only cover the numerical values and numerical ranges clearly recorded, but also cover the permissible deviation ranges that can be understood by a person of ordinary skill in the art to which the invention belongs, wherein the deviation range can be determined by the error generated during measurement, and the error is caused by, for example, the limitation of the measurement system or the process conditions. In addition, "approximately" can mean within one or more standard deviations of the above numerical values, such as ±30%, ±20%, ±10% or ±5%. The words "approximately", "approximately" or "substantially" used in this text may select an acceptable range of deviation or standard deviation according to the optical, etching, mechanical or other properties, and do not apply a single standard deviation to all the above optical, etching, mechanical and other properties.

FIG1 is a partial cross-sectional schematic diagram of a display device 10 according to an embodiment of the present invention. Referring to FIG1 , the display device 10 includes a pixel array substrate 100, light-emitting elements 120B and 120G, a wavelength conversion array layer 140, and a light scattering structure 160. The pixel array substrate 100 may be, for example, a thin film transistor (TFT) substrate or a similar electronic element driving substrate.

The light-emitting elements 120B and the light-emitting elements 120G are arranged in an array on the pixel array substrate 100 and are electrically connected to the pixel array substrate 100. The light-emitting elements 120B and the light-emitting elements 120G are electrically connected to the pixel array substrate 100, respectively. Specifically, each light-emitting element (the light-emitting element 120B and the light-emitting element 120G) is electrically connected to the pixel array substrate 100 through its corresponding electrode (not shown). In various embodiments of the present invention, the light-emitting elements 120B and the light-emitting elements 120G may include, for example, an organic light-emitting diode (OLED), a micro-light-emitting diode (Micro LED) or other similar solid-state light-emitting elements.

In this embodiment, the wavelength range of the light emitted by the light emitting element 120B falls between 400nm and 495nm, and the wavelength range of the light emitted by the light emitting element 120G falls between 495nm and 570nm. However, the configuration of the light emitting elements in the present invention is not limited thereto. For example, FIG. 2 is a partial cross-sectional schematic diagram of a display device 20 of another embodiment of the present invention. In this embodiment, the display device 20 may include only the light emitting element 120B.

In addition, the display device 10 may further include a pixel definition layer 102 (Pixel Define Layer; PDL). The pixel definition layer 102 is disposed on the pixel array substrate 100 and separates each light-emitting element 120B and the light-emitting element 120G. In particular, a sealing layer 104 is also disposed on the pixel array substrate 100. The sealing layer 104 covers the light-emitting element 120B and the light-emitting element 120G, and forms a surface 104s (marked in FIG. 1 ) above the light-emitting element 120B, the light-emitting element 120G and the pixel definition layer 102.

The wavelength conversion array layer 140 is disposed on the pixel array substrate 100, and the light emitting element 120B and the light emitting element 120G are both located between the wavelength conversion array layer 140 and the pixel array substrate 100. The wavelength conversion array layer 140 further includes a plurality of wavelength conversion materials 142 and a plurality of light-transmitting materials 144, and the light-transmitting materials 144 are separated from the wavelength conversion materials 142. The light emitting element 120B and the light emitting element 120G can emit light L1 toward the wavelength conversion array layer 140, and the light L1 enters the wavelength conversion material 142 and the light-transmitting material 144 of the wavelength conversion array layer 140.

The wavelength conversion array layer 140 further includes a spacer layer 146, which is distributed between each wavelength conversion material 142 and the light-transmitting material 144. In particular, as shown in FIG1 , the spacer layer 146 of the wavelength conversion array layer 140 is distributed according to the pixel definition layer 102 on the pixel array substrate 100, and the spacer layer 146 overlaps with the pixel definition layer 102. On the other hand, the wavelength conversion material 142 overlaps with some of the light-emitting elements 120B, and the light-transmitting material 144 overlaps with other light-emitting elements (such as the light-emitting element 120G and another light-emitting element 120B). In other words, the spacer layer 146 can also be regarded as a boundary for defining pixels.

In this embodiment, the wavelength conversion material 142 may include, for example, quantum dots, fluorescent pigments, or other similar materials. On the other hand, the light-transmitting material 144 may include, for example, epoxy resin, silicone resin, polymer photoresist, or similar materials. It is worth mentioning that the light L1 with a wavelength range of 400nm to 495nm has a greater penetration rate through the light-transmitting material 144 than the light L1 has through the wavelength conversion material 142.

For example, in this embodiment, when the wavelength of the light L1 falls within the wavelength range of blue light (i.e., 400nm to 495nm), most of the light L1 can pass through the light-transmitting material 144 but cannot pass through the wavelength conversion material 142. However, the present invention is not limited thereto, and in addition to the wavelength range of the above-mentioned blue light, when the wavelength range of the light L1 falls within the wavelength range of 495nm to 570nm (i.e., the wavelength range of green light), the transmittance of the light L1 through the light-transmitting material 144 may also be greater than the transmittance of the light L1 through the wavelength conversion material 142. For example, the transmittance of the light L1 through the light-transmitting material 144 may be between 50% and 100%, and the transmittance of the light L1 through the wavelength conversion material 142 may be between 0% and 20%.

Although the wavelength conversion material 142 in the embodiment of FIG. 1 includes a red (wavelength range of about 620nm to 750nm) quantum dot material 142R, the present invention is not limited thereto, and the wavelength conversion material 142 may also include a green quantum dot material 142G. Referring to FIG. 2 , in this embodiment, a portion of the wavelength conversion material 142 includes a red quantum dot material 142R, and another portion of the wavelength conversion material 142 includes a green quantum dot material 142G.

In addition, the wavelength conversion array layer 140 may further include two cover layers 145, wherein the wavelength conversion material 142 and the light-transmitting material 144 are sandwiched between the two cover layers 145. In other words, the cover layers 145 are located at two opposite sides of the wavelength conversion array layer 140. These cover layers 145 may include, for example, silicon oxide or similar transparent materials.

The light scattering structure 160 is disposed on the wavelength conversion array layer 140. As shown in FIG1 , the light scattering structure 160 overlaps with the light-transmitting material 144, but the light scattering structure 160 does not overlap with the wavelength conversion material 142. Specifically, a portion of the light scattering structure 160 covers the top of the light-transmitting material 144. Since the light L1 passes through the light-transmitting material 144 with almost no deflection, the light L1 that passes through the light-transmitting material 144 can enter the light scattering structure 160 covering the top of the light-transmitting material 144.

1 , each light diverging structure 160 includes a plurality of plano-convex lenses 162, and the plano-convex lenses 162 are protruding toward the wavelength conversion array layer 140. In other words, the convex surface of the plano-convex lens 162 faces the wavelength conversion array layer 140. In this embodiment, the width of each plano-convex lens 162 ranges from 1 μm to 10 μm, but the present invention is not limited thereto. In other embodiments of the present invention, the appropriate range of the width of the plano-convex lens 162 depends on the size of the display pixel.

The display device 10 further includes a black matrix layer 180, which is located on the wavelength conversion array layer 140 and between the light scattering structure 160 and the wavelength conversion array layer 140. In this embodiment, the black matrix layer 180 has a plurality of openings 185, and the openings 185 connect two opposite sides of the black matrix layer 180. In addition, the display device 10 further includes a plurality of filter layers 190, which are distributed in the openings 185 of the black matrix layer 180.

Please refer to FIG1 , the distribution position of the filter layer 190 corresponds to the distribution position of the light-emitting element 120B and the light-emitting element 120G. In detail, each filter layer 190 overlaps with one light-emitting element 120B or one light-emitting element 120G. And because the distribution positions of the wavelength conversion material 142 and the light-transmitting material 144 in the wavelength conversion array layer 140 also correspond to the light-emitting element 120B and the light-emitting element 120G, each filter layer 190 also overlaps with one wavelength conversion material 142 or one light-transmitting material 144.

The color of the filter layer 190 may include red, blue and green, but the present invention is not limited thereto. In other embodiments, the color of the filter layer 190 may also include any color other than these three colors, such as cyan, magenta and yellow. The material of the black matrix layer 180 may include, for example, resin, metal film (such as chromium oxide film) or similar photoresist material. The material of the filter layer 190 may include a polymer resin with dye or pigment or similar photoresist material.

In addition, the display device 10 further includes a light-transmitting layer 170, which is located between the black matrix layer 180 and the light-scattering structure 160 and covers the convex surface of each plano-convex lens 162. It is worth mentioning that the refractive index of the light-transmitting layer 170 is less than the refractive index of the plano-convex lens 162. For example, the light-transmitting layer 170 may include a low-refractive index material such as spherical silicon oxide or a polymer photoresist material, and the refractive index thereof is approximately between 1.3 and 1.6. The plano-convex lens 162 may be a high-refractive index material such as a polymer photoresist or a resin material to which zirconium dioxide or titanium dioxide particles are added, and the refractive index thereof is approximately between 1.6 and 2.0.

By adding the light diverging structure 160 to the display device 10, the light L1 can be deflected when passing through the plano-convex lens 162, and the light L1 originally traveling straight in the wavelength conversion array layer 140 can be changed in direction, so as to achieve the effect of light divergence. It is worth mentioning that in this embodiment, the focal length of the plano-convex lens 162 is less than the thickness of the opposite substrate 150. In this way, the focal point position of each plano-convex lens 162 will fall inside the opposite substrate 150, thereby making the light L1 diverge after leaving the opposite substrate 150.

Although the black matrix layer 180 of the above embodiment is located between the light scattering structure 160 and the wavelength conversion array layer 140, the present invention is not limited thereto. FIG. 3 is a partial cross-sectional schematic diagram of a display device 30 according to another embodiment of the present invention. The structure of the display device 30 is similar to that of the display device 10. The difference between the two is that each light scattering structure 160 of the display device 30 is located in the opening 185 of the black matrix layer 180, and the filter layer 190 located in the opening 185 covers the convex surface of the plano-convex lens 162 in the light scattering structure 160. In addition, another difference between the display device 30 and the display device 10 is that the display device 30 does not include the light-transmitting layer 170.

Returning to FIG. 1 , the display device 10 may further include an opposite substrate 150, on which the light scattering structure 160 is located, but between the opposite substrate 150 and the wavelength conversion array layer 140. In addition, the opposite substrate 150 may be a transparent substrate, such as a glass plate or a transparent plastic substrate, and the opposite substrate 150, the light scattering structure 160, the light-transmitting layer 170, the black matrix layer 180 and the light-filtering layer 190 may form a color light-filtering substrate. In this embodiment, the light scattering structure 160 and the light-transmitting layer 170 separate the opposite substrate 150 and the black matrix layer 180, but the present invention is not limited thereto. In other embodiments, the light diffusion structure 160 and the light-transmitting layer 170 may not exist between the opposite substrate 150 and the black matrix layer 180 .

It is worth mentioning that, although not shown in the figure, a bonding layer (not shown) is included between one of the covering layers 145 of the wavelength conversion array layer 140 and the surface 104s (marked in FIG. 1 ) of the sealing layer 104. These bonding layers may include, for example, optical clear adhesive (OCA) or similar bonding materials.

At least one embodiment of the present invention discloses a method for manufacturing a display device 10, which is described by a series of steps in FIG. 4A to FIG. 4B and FIG. 5A to FIG. 5D. Referring to FIG. 4A, first, a pixel array substrate 100 is provided, and a plurality of light-emitting elements (such as light-emitting element 120B and light-emitting element 120G) are disposed on the pixel array substrate 100, and the light-emitting element 120B and the light-emitting element 120G are electrically connected to the pixel array substrate 100. In addition, a pixel definition layer 102 is disposed on the pixel array substrate 100, and the pixel definition layer 102 separates each light-emitting element 120B and each light-emitting element 120G.

5A , the display device 10 further includes forming a photoresist layer 160′ on an opposing substrate 150. Next, as shown in FIG5B , a semi-transparent mask (not shown) is used as a mask, and the photoresist layer 160′ is patterned by, for example, lithography to form a plurality of light diffusion structures 160.

It is worth mentioning that the semi-transparent mask used in this embodiment is a halftone mask. By using a semi-transparent mask, different degrees of light shielding effects can be produced for different areas on the photoresist layer 160' during the lithography process, thereby causing different depths of removal of the photoresist layer 160' in different areas. In this way, a lens array on the light diverging structure 160 in this embodiment can be formed.

Please refer to FIG. 5C . After the light scattering structure 160 is formed, a light-transmitting layer 170 is formed on the opposite substrate 150. The light-transmitting layer 170 covers the surface 160s of the light scattering structure 160, and the refractive index of the light-transmitting layer 170 is smaller than the refractive index of the photoresist layer 160' (i.e., the refractive index of the light scattering structure 160). The light scattering structure 160 is formed by patterning the photoresist layer 160', and therefore, the material of the photoresist layer 160' is the same as the material of the light scattering structure 160.

In addition, in some embodiments of the present invention, a black matrix layer 180 is formed on the opposite substrate 150. Please refer to FIG. 4B and FIG. 5C together. The black matrix layer 180 covers the gap between the wavelength conversion material 142 and the light-transmitting material 144. In other words, the black matrix layer 180 covers the separation layer 146 of the wavelength conversion array layer 140.

It is particularly noted that in this embodiment, the light scattering structure 160 and the light-transmitting layer 170 are formed first, and then the black matrix layer 180 is formed on the light-transmitting layer 170, but the present invention is not limited thereto. In other embodiments that do not include the light-transmitting layer 170 (please refer to the display device 30 in FIG. 3 ), the light scattering structure 160 may be formed first and then the black matrix layer 180 may be formed. Alternatively, the black matrix layer 180 may be formed first, and then the light scattering structure 160 may be formed in the opening 185 of the black matrix layer 180.

Referring to FIG. 5D , a wavelength conversion array layer 140 is formed on the light scattering structure 160. The wavelength conversion array layer 140 includes a plurality of wavelength conversion materials 142 and a plurality of light-transmitting materials 144 separated from each other. The light scattering structure 160 overlaps with the light-transmitting material 144, but the light scattering structure 160 does not overlap with the wavelength conversion material 142.

Next, please return to FIG. 4B . After the wavelength conversion array layer 140 is formed, the counter substrate 150 is disposed on the light-emitting elements (including the light-emitting elements 120B and 120G), so that the light scattering structure 160 and the wavelength conversion array layer 140 are located between the counter substrate 150 and the light-emitting elements (including the light-emitting elements 120B and 120G), and the covering layer 145 of the wavelength conversion array layer 140 is bonded to the light-emitting elements (including the light-emitting elements 120B and 120G) and the pixel definition layer 102 via a bonding layer (not shown). The wavelength conversion material 142 overlaps with some of the light-emitting elements (the light-emitting element 120B), and the light-transmitting material 144 overlaps with other light-emitting elements (including the light-emitting element 120B and the light-emitting element 120G).

In summary, the light scattering structure in the present invention is superimposed on the light-transmitting material in the wavelength conversion array layer, so that the light emitted by the light-emitting element can enter the light scattering structure after passing through the light-transmitting material, and the light scattering structure deflects part of the straight light, and then it is in a divergent state when leaving the light scattering structure. In this way, the viewing angle presented by the light after passing through the light-transmitting material can be improved, and the difference between the viewing angle presented by the light after passing through the wavelength conversion material can be reduced, thereby improving the color difference of the visual angle.

Although the embodiments of the present invention have been disclosed above, they are not intended to limit the embodiments of the present invention. Any person with ordinary knowledge in the relevant technical field may make some changes and modifications without departing from the spirit and scope of the embodiments of the present invention. Therefore, the protection scope of the embodiments of the present invention shall be defined by the scope of the attached patent application.

10, 20, 30: display device 100: pixel array substrate 102: pixel definition layer 104: sealing layer 104s, 160s: surface 120B, 120G: light-emitting element 140: wavelength conversion array layer 142: wavelength conversion material 142R, 142G: quantum dot material 144: light-transmitting material 145: cover layer 146: partition layer 150: opposite substrate 160: light scattering structure 160’: photoresist layer 162: plano-convex lens 170: light-transmitting layer 180: black matrix layer 185: opening 190: filter layer L1: light

The present invention can be understood from the following detailed description and the accompanying drawings. It should be noted that various features are not drawn in proportion to industry practice standards. In fact, the sizes of various features can be increased or decreased arbitrarily for the sake of clarity of discussion. Figure 1 shows a partial cross-sectional schematic diagram of a display device of an embodiment of the present invention. Figure 2 shows a partial cross-sectional schematic diagram of a display device of another embodiment of the present invention. Figure 3 shows a partial cross-sectional schematic diagram of a display device of another embodiment of the present invention. Figures 4A to 4B show partial cross-sectional schematic diagrams of a display device manufacturing method of an embodiment of the present invention. Figures 5A to 5D show partial cross-sectional schematic diagrams of a display device manufacturing method of an embodiment of the present invention.

10: Display device

100: Pixel array substrate

102: Pixel definition layer

104: Sealing layer

104s: Surface

120B, 120G: Light-emitting element

140: Wavelength conversion array layer

142: Wavelength conversion material

142R: Quantum dot materials

144: Translucent material

145: Covering layer

146:Separation layer

150: Opposite substrate

160: Light diverging structure

162: Plano-convex lens

170: Translucent layer

180: Black matrix layer

185: Open mouth

190: Filter layer

L1: Light

Claims (11)

A display device comprises: a pixel array substrate; a plurality of light-emitting elements arranged in an array on the pixel array substrate and electrically connected to the pixel array substrate; a wavelength conversion array layer disposed on the pixel array substrate, wherein the light-emitting elements are located between the wavelength conversion array layer and the pixel array substrate, and the wavelength conversion array layer comprises: a plurality of wavelength conversion materials; and a plurality of light-transmitting materials separated from the wavelength conversion materials, wherein the wavelength conversion materials overlap with some of the light-emitting elements, and the light-transmitting materials overlap with other light-emitting elements; and A plurality of light scattering structures are disposed on the wavelength conversion array layer, wherein the light scattering structures overlap with the light-transmitting materials, but the light scattering structures do not overlap with the wavelength conversion materials; wherein the transmittance of a light ray with a wavelength range of 400nm to 495nm through the light-transmitting materials is greater than the transmittance of the light ray through the wavelength conversion materials. A display device as described in claim 1, wherein each of the light diverging structures comprises: A plurality of plano-convex lenses, and the plano-convex lenses protrude toward the wavelength conversion array layer, wherein the width of each of the plano-convex lenses ranges from 1µm to 10µm. The display device as described in claim 2 further comprises: a black matrix layer located between the light scattering structures and the wavelength conversion array layer; and a light-transmitting layer located between the black matrix layer and the light scattering structure and covering the convex surfaces of the plano-convex lenses. A display device as described in claim 3, wherein the refractive index of the light-transmitting layer is smaller than the refractive index of the plano-convex lenses. The display device as described in claim 2 further comprises: a black matrix layer located on the wavelength conversion array layer, wherein the black matrix layer has a plurality of openings, and the light diverging structures are respectively located in the openings; and a plurality of filter layers distributed in the openings of the black matrix layer and covering the convex surfaces of the plano-convex lenses. A display device as described in claim 1, wherein the wavelength conversion materials include red quantum dot materials. A display device as described in claim 6, wherein some of the wavelength conversion materials include green quantum dot materials. A method for manufacturing a display device, comprising: Providing a pixel array substrate; Disposing a plurality of light-emitting elements on the pixel array substrate, wherein the light-emitting elements are electrically connected to the pixel array substrate; Forming a photoresist layer on an opposing substrate; Using a semi-transparent mask as a mask, patterning the photoresist layer to form a plurality of light-scattering structures; Forming a wavelength conversion array layer on the light-scattering structures, wherein the wavelength conversion array layer comprises a plurality of wavelength conversion materials and a plurality of light-transmitting materials separated from each other; and After forming the wavelength conversion array layer, disposing the opposing substrate on the light-emitting elements, so that the light-scattering structures and the wavelength conversion array layer are located between the opposing substrate and the light-emitting elements; The wavelength conversion materials overlap with some of the light-emitting elements, and the light-transmitting materials overlap with other light-emitting elements; The light-scattering structures overlap with the light-transmitting materials, but the light-scattering structures do not overlap with the wavelength conversion materials. The method as described in claim 8, wherein the semi-transparent mask is a half-tone mask. The method as described in claim 8 further comprises: After forming the light scattering structures, forming a light-transmitting layer on the opposite substrate, wherein the light-transmitting layer covers a surface of the light scattering structure, and the refractive index of the light-transmitting layer is less than the refractive index of the photoresist layer. The method as described in claim 8 further comprises: Forming a black matrix layer on the opposite substrate, and the black matrix layer covers the gaps between the wavelength conversion materials and the light-transmitting materials.

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