TWI840150B - Sensor package structure and manufacturing method threrof - Google Patents
Sensor package structure and manufacturing method threrof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000003292 glue Substances 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 64
- 238000004806 packaging method and process Methods 0.000 claims description 37
- 239000012790 adhesive layer Substances 0.000 claims description 25
- 238000005520 cutting process Methods 0.000 claims description 17
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 238000005452 bending Methods 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 238000005304 joining Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
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- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/95—Circuit arrangements
- H10F77/953—Circuit arrangements for devices having potential barriers
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Abstract
Description
本發明涉及一種封裝結構,尤其涉及一種感測器封裝結構及其製造方法。The present invention relates to a packaging structure, and more particularly to a sensor packaging structure and a manufacturing method thereof.
基於現有感測器封裝結構的整體架構,所以現有感測器封裝結構的於製造時,會先將一感測晶片固定於一基板,而後再於所述感測晶片上安裝一透光片。然而,在所述透光片安裝於所述感測晶片之前,所述感測晶片的感測區域於生產製程中或封裝前容易受到汙染與損傷,進而降低其感測精準度與良率。Based on the overall structure of the existing sensor package structure, during the manufacturing of the existing sensor package structure, a sensing chip is first fixed to a substrate, and then a light-transmitting sheet is installed on the sensing chip. However, before the light-transmitting sheet is installed on the sensing chip, the sensing area of the sensing chip is easily contaminated and damaged during the production process or before packaging, thereby reducing its sensing accuracy and yield.
本發明實施例在於提供一種感測器封裝結構及其製造方法,其能有效地改善現有感測器封裝結構及其製造方法所產生的缺陷。The present invention provides a sensor package structure and a manufacturing method thereof, which can effectively improve the defects of the existing sensor package structure and the manufacturing method thereof.
本發明實施例公開一種感測器封裝結構的製造方法,其包括:一前置步驟:提供一晶圓及彼此分離的多個透光片,所述晶圓定義有彼此相連的多個感測晶片,並且每個所述感測晶片的尺寸大於任一個所述透光片的尺寸;一第一接合步驟:於每個所述感測晶片的頂面以一環形接著層貼附有一個所述透光片;其中,每個所述感測晶片與設置於其上的所述環形接著層與所述透光片共同定義為一感測模組且共同包圍形成一封閉空間,每個所述感測晶片的一感測區域位於所述封閉空間之內,而每個所述感測晶片的多個連接墊則位於所述環形接著層的外側;一切割步驟:固持所述晶圓並進行切割,以形成彼此分離的多個所述感測模組;以及一第二接合步驟:將其中一個所述感測模組固定於一基板的一上表面,並且以多條金屬線打線連接所述基板的多個接合墊、及該其中一個所述感測模組的多個所述連接墊。The present invention discloses a manufacturing method of a sensor package structure, which includes: a pre-step: providing a wafer and a plurality of light-transmitting sheets separated from each other, wherein the wafer defines a plurality of sensing chips connected to each other, and the size of each sensing chip is larger than the size of any light-transmitting sheet; a first bonding step: attaching a light-transmitting sheet to the top surface of each sensing chip with an annular bonding layer; wherein each sensing chip, the annular bonding layer disposed thereon, and the light-transmitting sheet together define a sensing module and are jointly connected to each other; A closed space is formed by enclosing the wafers, wherein a sensing area of each sensing chip is located within the closed space, and a plurality of connection pads of each sensing chip are located on the outer side of the annular bonding layer; a cutting step: holding the wafer and cutting it to form a plurality of sensing modules separated from each other; and a second bonding step: fixing one of the sensing modules on an upper surface of a substrate, and connecting the plurality of bonding pads of the substrate and the plurality of connection pads of one of the sensing modules by bonding with a plurality of metal wires.
本發明實施例也公開一種感測器封裝結構,其包括:一基板,其上表面具有一模組固定區及位於所述模組固定區外側的多個接合墊;一固定膠層,設置於所述基板的所述模組固定區;一感測模組,通過所述固定膠層而固定於所述基板,並且所述感測模組包含有:一感測晶片,其底面黏著於所述固定膠層,並且所述感測晶片於所述底面形成有埋置於所述固定膠層的多個柱形微結構;其中,所述感測晶片的一頂面包含有一感測區域及位於所述感測區域外側的多個連接墊;一環形接著層,設置於所述感測晶片的所述頂面,並且所述環形接著層圍繞於所述感測區域,而多個連接墊則位於所述環形接著層的外側;及一透光片,設置於所述環形接著層上,以使所述透光片、所述環形接著層、及所述感測晶片共同包圍形成一封閉空間;其中,所述透光片朝向所述頂面正投影所形成的一投影區域,其位在多個連接墊的內側且相隔有一距離;以及多條金屬線,分別連接所述基板的多個所述接合墊至所述感測晶片的多個所述連接墊,以使所述基板與所述感測晶片彼此電性耦接。The present invention also discloses a sensor packaging structure, which includes: a substrate, whose upper surface has a module fixing area and a plurality of bonding pads located outside the module fixing area; a fixing adhesive layer, which is arranged in the module fixing area of the substrate; a sensing module, which is fixed to the substrate through the fixing adhesive layer, and the sensing module includes: a sensing chip, whose bottom surface is adhered to the fixing adhesive layer, and the sensing chip has a plurality of columnar microstructures buried in the fixing adhesive layer formed on the bottom surface; wherein a top surface of the sensing chip contains a sensing area and a plurality of bonding pads located outside the sensing area; an annular bonding layer , arranged on the top surface of the sensing chip, and the annular bonding layer surrounds the sensing area, and a plurality of connection pads are located on the outer side of the annular bonding layer; and a light-transmitting sheet, arranged on the annular bonding layer, so that the light-transmitting sheet, the annular bonding layer, and the sensing chip together surround a closed space; wherein a projection area formed by the orthographic projection of the light-transmitting sheet toward the top surface is located on the inner side of the plurality of connection pads and separated by a distance; and a plurality of metal wires, respectively connecting the plurality of bonding pads of the substrate to the plurality of connection pads of the sensing chip, so that the substrate and the sensing chip are electrically coupled to each other.
本發明實施例另公開一種感測器封裝結構,其包括:一基板,其上表面具有一模組固定區及位於所述模組固定區外側的多個接合墊;一固定膠層,設置於所述基板的所述模組固定區;一感測模組,通過所述固定膠層而固定於所述基板,並且所述感測模組包含有:一感測晶片,其底面黏著於所述固定膠層;其中,所述感測晶片的一頂面包含有一感測區域及位於所述感測區域外側的多個連接墊;一環形接著層,設置於所述感測晶片的所述頂面,並且所述環形接著層圍繞於所述感測區域,而多個連接墊則位於所述環形接著層的外側;及一透光片,設置於所述環形接著層上,以使所述透光片、所述環形接著層、及所述感測晶片共同包圍形成一封閉空間;其中,所述透光片朝向所述頂面正投影所形成的一投影區域,其位在多個連接墊的內側且相隔有一距離;以及多條金屬線,分別連接所述基板的多個所述接合墊至所述感測晶片的多個所述連接墊,以使所述基板與所述感測晶片彼此電性耦接。The present invention also discloses a sensor packaging structure, which includes: a substrate, whose upper surface has a module fixing area and a plurality of bonding pads located outside the module fixing area; a fixing adhesive layer, which is arranged on the module fixing area of the substrate; a sensing module, which is fixed to the substrate through the fixing adhesive layer, and the sensing module includes: a sensing chip, whose bottom surface is adhered to the fixing adhesive layer; wherein a top surface of the sensing chip contains a sensing area and a plurality of bonding pads located outside the sensing area; an annular bonding layer, which is arranged on the top surface of the sensing chip, and The annular connecting layer surrounds the sensing area, and a plurality of connecting pads are located on the outer side of the annular connecting layer; and a light-transmitting sheet is disposed on the annular connecting layer so that the light-transmitting sheet, the annular connecting layer, and the sensing chip together surround a closed space; wherein a projection area formed by the orthographic projection of the light-transmitting sheet toward the top surface is located on the inner side of the plurality of connecting pads and separated by a distance; and a plurality of metal wires are respectively connected to the plurality of bonding pads of the substrate to the plurality of connecting pads of the sensing chip so that the substrate and the sensing chip are electrically coupled to each other.
綜上所述,本發明實施例所公開的感測器封裝結構及其製造方法,其通過以尺寸較小的所述透光片黏接在所述感測晶片而構成所述感測模組(如:採用所述透光片以及所述環形接著層來環繞所述晶片感測區),使得所述感測晶片的所述感測區域位於所述感測模組的所述封閉空間之內,而後再以所述感測模組固定於所述基板,進而有效地避免所述感測晶片的所述感測區域於所述感測器封裝結構的製造過程中受到汙染與損傷,進而提高良率。In summary, the sensor package structure and the manufacturing method thereof disclosed in the embodiment of the present invention form the sensing module by bonding the smaller light-transmitting sheet to the sensing chip (e.g., using the light-transmitting sheet and the annular bonding layer to surround the chip sensing area), so that the sensing area of the sensing chip is located within the closed space of the sensing module, and then the sensing module is fixed to the substrate, thereby effectively preventing the sensing area of the sensing chip from being contaminated and damaged during the manufacturing process of the sensor package structure, thereby improving the yield.
再者,本發明實施例所公開的感測器封裝結構及其製造方法,其在所述感測模組之中,通過所述封閉空間來收容具有較大熱膨脹係數(Coefficient of Thermal Expansion,CTE)的所述環形接著層的膨脹部分,進而降低所述透光片或所述感測區域因為承受所述環形接著層的膨脹而被擠壓損壞。Furthermore, the sensor packaging structure and the manufacturing method thereof disclosed in the embodiment of the present invention, in the sensing module, the expanded portion of the annular bonding layer having a larger coefficient of thermal expansion (CTE) is accommodated by the closed space, thereby reducing the risk of the light-transmitting sheet or the sensing area being squeezed and damaged due to the expansion of the annular bonding layer.
為能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,但是此等說明與附圖僅用來說明本發明,而非對本發明的保護範圍作任何的限制。To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, such description and drawings are only used to illustrate the present invention and do not limit the protection scope of the present invention.
以下是通過特定的具體實施例來說明本發明所公開有關“感測器封裝結構及其製造方法”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。The following is an explanation of the implementation of the "sensor packaging structure and its manufacturing method" disclosed in the present invention through specific concrete embodiments. Technical personnel in this field can understand the advantages and effects of the present invention from the contents disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways based on different viewpoints and applications without deviating from the concept of the present invention. In addition, the drawings of the present invention are only simple schematic illustrations and are not depicted according to actual sizes. Please note in advance. The following implementation will further explain the relevant technical contents of the present invention in detail, but the disclosed contents are not intended to limit the scope of protection of the present invention.
應當可以理解的是,雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者信號,但這些元件或者信號不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件,或者一信號與另一信號。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。It should be understood that, although the terms "first", "second", "third", etc. may be used in this document to describe various components or signals, these components or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another component, or one signal from another signal. In addition, the term "or" used in this document may include any one or more combinations of the related listed items depending on the actual situation.
[實施例一][Example 1]
請參閱圖1至圖7所示,其為本發明的實施例一。如圖1所示,本實施例公開一種感測器封裝結構的製造方法S100,其依序包含有(或實施)一前置步驟S110、一第一接合步驟S120、一切割步驟S130、一第二接合步驟S140、及一封裝步驟S150。Please refer to FIG. 1 to FIG. 7 , which are the first embodiment of the present invention. As shown in FIG. 1 , the present embodiment discloses a manufacturing method S100 of a sensor packaging structure, which sequentially includes (or implements) a pre-step S110, a first bonding step S120, a cutting step S130, a second bonding step S140, and a packaging step S150.
本實施例於下述依序介紹所述感測器封裝結構的製造方法S100的多個所述步驟S110~S150,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述感測器封裝結構的製造方法S100的上述多個步驟可依據設計需求而加以增減或調整(如:所述封裝步驟S150可依設計需求而省略)。This embodiment introduces the steps S110 to S150 of the manufacturing method S100 of the sensor package structure in order below, but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the steps of the manufacturing method S100 of the sensor package structure can be increased, decreased or adjusted according to design requirements (e.g., the packaging step S150 can be omitted according to design requirements).
所述前置步驟S110:如圖1至圖3所示,提供一晶圓31a及彼此分離的多個透光片33,所述晶圓31a定義有彼此相連的多個感測晶片31,並且每個所述感測晶片31的尺寸大於任一個所述透光片33的尺寸。其中,多個所述透光片33已限定是彼此獨立存在且未相連,並且每個所述透光片33於本實施例是以一平板玻璃來說明,但本發明不受限於此。也就是說,尺寸大於或等於所述感測晶片31的任何透光片,其皆不同於本實施例所指的所述透光片33。The pre-step S110: As shown in FIG. 1 to FIG. 3, a wafer 31a and a plurality of light-transmitting sheets 33 separated from each other are provided. The wafer 31a is defined with a plurality of sensing chips 31 connected to each other, and the size of each sensing chip 31 is larger than the size of any light-transmitting sheet 33. The plurality of light-transmitting sheets 33 are defined to exist independently and not connected to each other, and each light-transmitting sheet 33 is illustrated as a flat glass in this embodiment, but the present invention is not limited thereto. In other words, any light-transmitting sheet with a size larger than or equal to that of the sensing chip 31 is different from the light-transmitting sheet 33 referred to in this embodiment.
所述第一接合步驟S120:如圖1及圖3所示,於每個所述感測晶片31的頂面311以一環形接著層32貼附有一個所述透光片33。其中,每個所述感測晶片31與設置於其上的所述環形接著層32與所述透光片33共同定義為一感測模組3且共同包圍形成一封閉空間S。每個所述感測晶片31的一感測區域3111位於所述封閉空間S之內,而每個所述感測晶片31的多個連接墊3113則位於所述環形接著層32的外側。The first bonding step S120: As shown in FIG. 1 and FIG. 3 , a transparent sheet 33 is attached to the top surface 311 of each sensing chip 31 by means of an annular bonding layer 32. Each sensing chip 31, the annular bonding layer 32 and the transparent sheet 33 disposed thereon are collectively defined as a sensing module 3 and collectively surround a closed space S. A sensing area 3111 of each sensing chip 31 is located within the closed space S, and a plurality of connection pads 3113 of each sensing chip 31 are located on the outer side of the annular bonding layer 32.
需說明的是,於每個所述感測模組3之中,所述環形接著層32可以是先貼附於所述感測晶片31的所述頂面311,而後再將所述透光片33黏著至所述環形接著層32;或者,所述環形接著層32也可以是先貼附於所述透光片33,而後再將所述透光片33以所述環形接著層32黏著至所述感測晶片31的所述頂面311;又或者,先在一玻璃板進行點膠,其後再切割所述玻璃板,以形成多個所述透光片33則黏著於其上的所述環形接著層32(也就是,多個所述透光片33在進行所述第一接合步驟S120之前也可以是未被切割的所述玻璃板),而每個所述透光片33則可以通過相對應所述環形接著層32黏著至所述感測晶片31的所述頂面311,但本發明不以上述為限。It should be noted that, in each of the sensing modules 3, the annular bonding layer 32 may be first attached to the top surface 311 of the sensing chip 31, and then the light-transmitting sheet 33 may be adhered to the annular bonding layer 32; or, the annular bonding layer 32 may be first attached to the light-transmitting sheet 33, and then the light-transmitting sheet 33 may be adhered to the top surface 311 of the sensing chip 31 through the annular bonding layer 32; or, The glass plate is glued and then cut to form the annular bonding layer 32 on which the plurality of light-transmitting sheets 33 are adhered (that is, the plurality of light-transmitting sheets 33 may also be the uncut glass plate before the first bonding step S120 is performed), and each of the light-transmitting sheets 33 may be adhered to the top surface 311 of the sensing chip 31 through the corresponding annular bonding layer 32, but the present invention is not limited to the above.
更詳細地說,於每個所述感測模組3之中,所述透光片33朝向所述頂面311正投影所形成的一投影區域,其位在多個連接墊3113的內側、並與每個所述連接墊3113相隔有一距離G(如:圖7)。也就是說,不符合所述透光片33與所述感測晶片31的上述連接關係的任何構造,其皆不同於本實施例所指的所述感測模組3。More specifically, in each of the sensing modules 3, a projection area formed by the orthographic projection of the light-transmitting sheet 33 toward the top surface 311 is located inside the plurality of connection pads 3113 and is separated from each of the connection pads 3113 by a distance G (e.g., FIG. 7 ). In other words, any structure that does not conform to the above-mentioned connection relationship between the light-transmitting sheet 33 and the sensing chip 31 is different from the sensing module 3 referred to in this embodiment.
所述切割步驟S130:如圖1、及圖3和圖4所示,固持所述晶圓31a並進行切割,以形成彼此分離的多個所述感測模組3。於本實施例中,多個所述透光片33是由棋盤狀的通道所隔開,以使切割刀具或雷射(圖中未示出)穿過且沿著所述通道來進行所述晶圓31a的切割(也就是說,多個所述透光片33於所述切割步驟S130中不會觸及所述切割刀具)。The cutting step S130: As shown in FIG. 1, FIG. 3 and FIG. 4, the wafer 31a is held and cut to form a plurality of the sensing modules 3 separated from each other. In this embodiment, the plurality of light-transmitting sheets 33 are separated by chessboard-shaped channels, so that a cutting tool or laser (not shown in the figure) passes through and cuts the wafer 31a along the channels (that is, the plurality of light-transmitting sheets 33 will not touch the cutting tool in the cutting step S130).
需額外說明的是,所述切割步驟S130於本實施例中是限定在僅切割單個構件(也就是,所述晶圓31a),據以避免因為切割多個構件而影響彼此之間的相對位置關係。據此,需要切割多個構件的任何切割流程,其皆不同於本實施例所指的所述切割步驟S130。It should be noted that the cutting step S130 in this embodiment is limited to cutting a single component (i.e., the wafer 31a) to avoid affecting the relative position relationship between components due to cutting multiple components. Therefore, any cutting process that requires cutting multiple components is different from the cutting step S130 in this embodiment.
所述第二接合步驟S140:如圖1及圖5所示,將其中一個所述感測模組3固定於一基板1的一上表面11,並且以多條金屬線4打線連接所述基板1的多個接合墊112、及該其中一個所述感測模組3的多個所述連接墊3113。於本實施例中,該其中一個所述感測模組3是以一固定膠層2固定於所述基板1的所述上表面11。The second bonding step S140: As shown in FIG. 1 and FIG. 5 , one of the sensing modules 3 is fixed to an upper surface 11 of a substrate 1, and a plurality of bonding pads 112 of the substrate 1 and a plurality of connection pads 3113 of the one of the sensing modules 3 are connected by bonding with a plurality of metal wires 4. In this embodiment, the one of the sensing modules 3 is fixed to the upper surface 11 of the substrate 1 by a fixing glue layer 2.
進一步地說,於該其中一個所述感測模組3之中,所述感測晶片31的底面312未經過研磨且固定於所述基板1的所述上表面11,以使得所述感測晶片31的厚度T31的最大容許值為700微米(μm)。據此,由於所述感測晶片31無須經過研磨而削減所述厚度T31,所以使得所述感測晶片31能夠具備有較高的熱容量,進而使所述感測晶片31於運作時,溫度上升較慢,有效地提升所述感測晶片31的信噪比(signal-to-noise ratio,SNR)。Furthermore, in one of the sensing modules 3, the bottom surface 312 of the sensing chip 31 is not ground and is fixed to the upper surface 11 of the substrate 1, so that the maximum allowable value of the thickness T31 of the sensing chip 31 is 700 micrometers (μm). Accordingly, since the sensing chip 31 does not need to be ground to reduce the thickness T31, the sensing chip 31 can have a higher heat capacity, thereby making the temperature of the sensing chip 31 rise more slowly during operation, effectively improving the signal-to-noise ratio (SNR) of the sensing chip 31.
所述封裝步驟S150:如圖1、及圖6和圖7所示,於所述基板1的所述上表面11形成有一封裝體5,並且該其中一個所述感測模組3與多條所述金屬線4皆埋置於所述封裝體5內,而所述透光片33的至少局部外表面331裸露於所述封裝體5之外。進一步地說,在實施所述封裝步驟S150之後,取得一感測器封裝結構100,其於所述基板1的下表面12未設置有任何焊接球,據以降低所述感測器封裝結構100的整體厚度。The packaging step S150: As shown in FIG. 1, FIG. 6 and FIG. 7, a packaging body 5 is formed on the upper surface 11 of the substrate 1, and the one of the sensing modules 3 and the plurality of metal wires 4 are embedded in the packaging body 5, while at least a partial outer surface 331 of the light-transmitting sheet 33 is exposed outside the packaging body 5. In other words, after the packaging step S150 is performed, a sensor packaging structure 100 is obtained, in which no solder balls are disposed on the lower surface 12 of the substrate 1, thereby reducing the overall thickness of the sensor packaging structure 100.
綜上所述,本發明實施例所公開的感測器封裝結構的製造方法S100,其通過以尺寸較小的所述透光片33先黏接在所述感測晶片31而構成所述感測模組3,使得所述感測晶片31的所述感測區域3111位於所述感測模組3的所述封閉空間S之內,而後再以所述感測模組3固定於所述基板1,進而有效地避免所述感測晶片31的所述感測區域3111於所述感測器封裝結構100的製造過程中受到汙染與損傷。In summary, the manufacturing method S100 of the sensor package structure disclosed in the embodiment of the present invention forms the sensing module 3 by first bonding the smaller light-transmitting sheet 33 to the sensing chip 31, so that the sensing area 3111 of the sensing chip 31 is located within the closed space S of the sensing module 3, and then the sensing module 3 is fixed to the substrate 1, thereby effectively preventing the sensing area 3111 of the sensing chip 31 from being contaminated and damaged during the manufacturing process of the sensor package structure 100.
此外,本實施例以上述內容大致說明所述感測器封裝結構的製造方法S100,以下接著大致介紹所述感測器封裝結構100的具體構造。其中,所述感測器封裝結構100較佳是由上述感測器封裝結構的製造方法S100所製成,但本發明不以此為限。In addition, this embodiment generally describes the manufacturing method S100 of the sensor package structure with the above content, and then generally introduces the specific structure of the sensor package structure 100. Among them, the sensor package structure 100 is preferably manufactured by the manufacturing method S100 of the sensor package structure, but the present invention is not limited thereto.
於本實施例中,如圖6和圖7所示,所述感測器封裝結構100包含有一基板1、設置於所述基板1的一固定膠層2、通過所述固定膠層2而固定於所述基板1的一感測模組3、電性耦接所述基板1與所述感測模組3的多條金屬線4、及形成於所述基板1的一封裝體5,但本發明不以此為限。In this embodiment, as shown in FIG. 6 and FIG. 7 , the sensor packaging structure 100 includes a substrate 1, a fixing adhesive layer 2 disposed on the substrate 1, a sensing module 3 fixed to the substrate 1 through the fixing adhesive layer 2, a plurality of metal wires 4 electrically coupling the substrate 1 and the sensing module 3, and a packaging body 5 formed on the substrate 1, but the present invention is not limited thereto.
所述基板1於本實施例中為呈正方形或矩形,但本發明不受限於此。其中,所述基板1於其上表面11的大致中央處設有一模組固定區111,並且所述基板1於所述上表面11形成有位於所述模組固定區111外側的多個接合墊112。多個所述接合墊112於本實施例中是大致排列成環狀,但本發明不限於此。舉例來說,在本發明未繪示的其他實施例中,多個所述接合墊112也可以是在所述模組固定區111的相反兩側分別排成兩列。The substrate 1 is square or rectangular in this embodiment, but the present invention is not limited thereto. The substrate 1 is provided with a module fixing area 111 at approximately the center of its upper surface 11, and the substrate 1 is formed with a plurality of bonding pads 112 on the outer side of the module fixing area 111 on the upper surface 11. The plurality of bonding pads 112 are arranged roughly in a ring shape in this embodiment, but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the plurality of bonding pads 112 may also be arranged in two rows on opposite sides of the module fixing area 111.
需說明的是,所述基板1於其下表面12未設有任何焊接球;也就是說,所述感測器封裝結構100能通過所述基板1的所述下表面12而直接焊接固定於一電子構件(圖中未示出)上,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述基板1也可以依據設計需求而在所述下表面12設有多個焊接球。It should be noted that the substrate 1 does not have any solder balls on its lower surface 12; that is, the sensor package structure 100 can be directly soldered and fixed to an electronic component (not shown in the figure) through the lower surface 12 of the substrate 1, but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the substrate 1 can also have multiple solder balls on the lower surface 12 according to design requirements.
所述固定膠層2設置於所述基板1的所述模組固定區111;也就是說,所述固定膠層2是位於多個所述接合墊112的內側,以使所述感測模組3通過所述固定膠層2而沿一預設方向D固定於所述基板1的所述模組固定區111。需說明的是,所述感測模組3於本實施例中是以整體黏固於所述基板1,此不同於多個構件依序安裝在所述基板1的架構。The fixing adhesive layer 2 is disposed in the module fixing area 111 of the substrate 1; that is, the fixing adhesive layer 2 is located on the inner side of the plurality of bonding pads 112, so that the sensing module 3 is fixed to the module fixing area 111 of the substrate 1 along a preset direction D through the fixing adhesive layer 2. It should be noted that the sensing module 3 is integrally bonded to the substrate 1 in this embodiment, which is different from a structure in which a plurality of components are sequentially mounted on the substrate 1.
更詳細地說,所述感測模組3包含有一感測晶片31、設置於所述感測晶片31的一環形接著層32、及設置於所述環形接著層32的一透光片33。其中,所述感測晶片31的尺寸(如:外輪廓面積)大於所述環形接著層32的尺寸、但小於所述感測晶片31的尺寸,據以使所述環形接著層32的外側緣是與所述感測晶片31與所述透光片33包圍形成有一環形槽34。In more detail, the sensing module 3 includes a sensing chip 31, an annular bonding layer 32 disposed on the sensing chip 31, and a transparent sheet 33 disposed on the annular bonding layer 32. The size of the sensing chip 31 (e.g., outer contour area) is larger than the size of the annular bonding layer 32 but smaller than the size of the sensing chip 31, so that the outer edge of the annular bonding layer 32 is surrounded by the sensing chip 31 and the transparent sheet 33 to form an annular groove 34.
進一步地說,所述感測晶片31於本實施例中呈方形(如:長方形或正方形)且以一影像感測晶片來說明,並且所述感測晶片31的厚度T31的最大容許值為700微米,但不以此為限。其中,所述感測晶片31的底面312)黏著於所述固定膠層2;也就是說,所述感測晶片31是位於多個所述接合墊112的內側。再者,所述感測晶片31的一頂面311包含有一感測區域3111及圍繞於所述感測區域3111(且呈環形)的一承載區域3112。Furthermore, the sensing chip 31 is square (e.g., rectangular or square) in this embodiment and is described as an image sensing chip, and the maximum allowable value of the thickness T31 of the sensing chip 31 is 700 microns, but not limited thereto. The bottom surface 312 of the sensing chip 31 is adhered to the fixing adhesive layer 2; that is, the sensing chip 31 is located on the inner side of the plurality of bonding pads 112. Furthermore, a top surface 311 of the sensing chip 31 includes a sensing area 3111 and a supporting area 3112 surrounding the sensing area 3111 (and in a ring shape).
其中,所述感測晶片31包含有位於所述承載區域3112的多個連接墊3113(也就是,多個所述連接墊3113位於所述感測區域3111的外側)。其中,所述感測晶片31的多個所述連接墊3113的數量及位置於本實施例中是分別對應於所述基板1的多個所述接合墊112的數量及位置;也就是說,多個所述連接墊3113於本實施例中也是大致排列成環狀。The sensing chip 31 includes a plurality of connection pads 3113 located in the carrying area 3112 (that is, the plurality of connection pads 3113 are located outside the sensing area 3111). The number and position of the plurality of connection pads 3113 of the sensing chip 31 respectively correspond to the number and position of the plurality of bonding pads 112 of the substrate 1 in this embodiment; that is, the plurality of connection pads 3113 are also roughly arranged in a ring shape in this embodiment.
所述環形接著層32設置於所述感測晶片31的所述頂面311(如:所述承載區域3112),並且所述環形接著層32圍繞於所述感測區域3111,而多個連接墊3113則位於所述環形接著層32的外側。其中,所述環形接著層32是分別所述感測區域3111及任一個所述連接墊3113相隔有一間距。The annular bonding layer 32 is disposed on the top surface 311 (e.g., the supporting area 3112) of the sensing chip 31, and the annular bonding layer 32 surrounds the sensing area 3111, and a plurality of connection pads 3113 are located outside the annular bonding layer 32. The annular bonding layer 32 is spaced apart from the sensing area 3111 and any of the connection pads 3113 by a distance.
所述透光片33於本實施例中是以一平板玻璃來說明,但本發明不受限於此。其中,所述透光片33具有位於相反側的一外表面331與一內表面332,並且所述透光片33(以所述內表面332)設置於所述環形接著層32上,以使所述透光片33、所述環形接著層32、及所述感測晶片31共同包圍形成一封閉空間S。其中,所述感測晶片31的所述感測區域3111位於所述封閉空間S之內,並且所述透光片33(沿所述預設方向D)朝向所述頂面311正投影所形成的一投影區域,其位在多個連接墊3113的內側且相隔有一距離。The light-transmitting sheet 33 is illustrated as a flat glass in this embodiment, but the present invention is not limited thereto. The light-transmitting sheet 33 has an outer surface 331 and an inner surface 332 located on opposite sides, and the light-transmitting sheet 33 (with the inner surface 332) is disposed on the annular bonding layer 32, so that the light-transmitting sheet 33, the annular bonding layer 32, and the sensing chip 31 together surround a closed space S. The sensing area 3111 of the sensing chip 31 is located within the closed space S, and a projection area formed by the orthographic projection of the light-transmitting sheet 33 (along the preset direction D) toward the top surface 311 is located on the inner side of the plurality of connection pads 3113 and separated by a distance.
據此,所述感測器封裝結構100於所述透光片33及其所對應的所述環形接著層32和所述感測晶片31之中,能通過所述封閉空間S來收容具有較大熱膨脹係數(Coefficient of Thermal Expansion,CTE)的所述環形接著層32的膨脹部分,進而降低所述透光片33或所述感測區域3111因為承受所述環形接著層32的膨脹而被擠壓損壞。Accordingly, the sensor package structure 100 can accommodate the expanded portion of the annular bonding layer 32 having a larger coefficient of thermal expansion (CTE) through the closed space S among the light-transmitting sheet 33 and its corresponding annular bonding layer 32 and the sensing chip 31, thereby reducing the light-transmitting sheet 33 or the sensing area 3111 from being squeezed and damaged due to the expansion of the annular bonding layer 32.
多條所述金屬線4分別連接所述基板1的多個所述接合墊112至所述感測晶片31的多個所述連接墊3113(也就是,每條所述金屬線4的所述兩端分別連接於一個所述接合墊112及相對應的所述連接墊3113),以使所述基板1與所述感測晶片31彼此電性耦接。The plurality of metal wires 4 respectively connect the plurality of bonding pads 112 of the substrate 1 to the plurality of connecting pads 3113 of the sensing chip 31 (that is, the two ends of each of the metal wires 4 are respectively connected to one bonding pad 112 and the corresponding connecting pad 3113), so that the substrate 1 and the sensing chip 31 are electrically coupled to each other.
於本實施例中,任一個所述金屬線4的彎折點(或最高點)是與所述基板1的所述上表面11形成有一最高距離H4,其大於所述透光片33與所述基板1之間的一間隔距離H33。也就是說,所述感測模組3的構件配置並不會影響後續的所述金屬線4打線流程。In this embodiment, the bending point (or highest point) of any of the metal wires 4 forms a maximum distance H4 with the upper surface 11 of the substrate 1, which is greater than a spacing distance H33 between the light-transmitting sheet 33 and the substrate 1. In other words, the component configuration of the sensing module 3 does not affect the subsequent bonding process of the metal wires 4.
所述封裝體5於本實施例中為不透光狀,用以阻擋可見光穿過。所述封裝體5是以一液態封膠(Liquid encapsulation)來說明,並且所述封裝體5形成於所述基板1的所述上表面11且其邊緣切齊於所述基板1的邊緣。其中,所述感測模組3與多條所述金屬線4埋置於所述封裝體5內,而所述透光片33的至少局部所述外表面331裸露於所述封裝體5之外。再者,所述感測模組3於本實施例中還能通過其構件配置(如:所述環形槽34內充填所述封裝體5),以有效地提高所述感測模組3與所述封裝體5之間的結合性。The package body 5 is opaque in this embodiment to prevent visible light from passing through. The package body 5 is described as a liquid encapsulation, and the package body 5 is formed on the upper surface 11 of the substrate 1 and its edge is aligned with the edge of the substrate 1. The sensing module 3 and the plurality of metal wires 4 are buried in the package body 5, and at least a portion of the outer surface 331 of the light-transmitting sheet 33 is exposed outside the package body 5. Furthermore, the sensing module 3 in this embodiment can also effectively improve the bonding between the sensing module 3 and the package body 5 through its component configuration (e.g., the annular groove 34 is filled with the package body 5).
[實施例二][Example 2]
請參閱圖8至圖10所示,其為本發明的實施例二。由於本實施例類似於上述實施例一,所以兩個實施例的相同處不再加以贅述,而本實施例相較於上述實施例一的差異大致說明如下:Please refer to FIG. 8 to FIG. 10 , which are the second embodiment of the present invention. Since this embodiment is similar to the first embodiment, the similarities between the two embodiments will not be described in detail, and the differences between this embodiment and the first embodiment are roughly described as follows:
於本實施例中,所述感測晶片31於所述底面312形成有多個柱形微結構3121,並且於所述第二接合步驟之中,所述感測晶片31的多個所述柱形微結構3121埋置於所述固定膠層2,並且每個所述柱形微結構3121的構型可依據設計需求而加以調整變化;例如:每個所述柱形微結構3121可以是呈如圖8所示的三角柱狀、如圖9所示的圓柱狀或矩形柱狀、或是如圖10所示的類球狀。所述固定膠層2的厚度T2大於任一個所述柱形微結構3121的厚度T3121,以使每個所述柱形微結構3121完全埋置在所述固定膠層2且未觸及所述基板1。In this embodiment, the sensing chip 31 has a plurality of columnar microstructures 3121 formed on the bottom surface 312, and in the second bonding step, the plurality of columnar microstructures 3121 of the sensing chip 31 are buried in the fixing adhesive layer 2, and the configuration of each columnar microstructure 3121 can be adjusted and changed according to design requirements; for example, each columnar microstructure 3121 can be in the shape of a triangular prism as shown in FIG8 , a cylindrical or rectangular prism as shown in FIG9 , or a spherical shape as shown in FIG10 . The thickness T2 of the fixing adhesive layer 2 is greater than the thickness T3121 of any columnar microstructure 3121, so that each columnar microstructure 3121 is completely buried in the fixing adhesive layer 2 and does not touch the substrate 1.
依上所述,所述感測器封裝結構100於本實施例中能通過所述感測晶片31形成有埋置於所述固定膠層2的多個所述柱形微結構3121,據以進一步有效地提升所述感測模組3與所述基板1之間的結合性。As described above, in the present embodiment, the sensor package structure 100 can form a plurality of columnar microstructures 3121 embedded in the fixing adhesive layer 2 through the sensing chip 31, thereby further effectively improving the bonding between the sensing module 3 and the substrate 1.
[實施例三][Example 3]
請參閱圖11和圖12所示,其為本發明的實施例三。由於本實施例類似於上述實施例一和二,所以上述多個實施例的相同處不再加以贅述,而本實施例相較於上述實施例一和二的差異大致說明如下:Please refer to FIG. 11 and FIG. 12, which are the third embodiment of the present invention. Since this embodiment is similar to the first and second embodiments, the similarities of the above embodiments are not described in detail, and the differences between this embodiment and the first and second embodiments are roughly described as follows:
於本實施例中,所述感測器封裝結構的製造方法S100於本實施例中可依據設計需求而省略所述封裝步驟;也就是說,所述感測器封裝結構100可依據設計需求而省略所述封裝體5。此外,所述封裝體5也可依據設計需求而加以調整變化;例如:在本發明未繪示的其他實施例中,所述封裝體5可以是圍繞於所述透光片33的側邊,但所述封裝體5未包覆任何所述金屬線3或是僅包覆任一個所述金屬線3的局部。In this embodiment, the manufacturing method S100 of the sensor package structure can omit the packaging step according to design requirements; that is, the sensor package structure 100 can omit the package body 5 according to design requirements. In addition, the package body 5 can also be adjusted and changed according to design requirements; for example: in other embodiments not shown in the present invention, the package body 5 can surround the side of the light-transmitting sheet 33, but the package body 5 does not cover any of the metal wires 3 or only covers a part of any of the metal wires 3.
[本發明實施例的技術效果][Technical Effects of the Embodiments of the Invention]
綜上所述,本發明實施例所公開的感測器封裝結構及其製造方法,其通過以尺寸較小的所述透光片黏接在所述感測晶片而構成所述感測模組,使得所述感測晶片的所述感測區域位於所述感測模組的所述封閉空間之內,而後再以所述感測模組固定於所述基板,進而有效地避免所述感測晶片的所述感測區域於所述感測器封裝結構的製造過程中受到汙染與損傷。In summary, the sensor package structure and the manufacturing method thereof disclosed in the embodiments of the present invention form the sensing module by bonding the smaller light-transmitting sheet to the sensing chip, so that the sensing area of the sensing chip is located within the closed space of the sensing module, and then the sensing module is fixed to the substrate, thereby effectively preventing the sensing area of the sensing chip from being contaminated and damaged during the manufacturing process of the sensor package structure.
再者,本發明實施例所公開的感測器封裝結構及其製造方法,其在所述感測模組之中,通過所述封閉空間來收容具有較大熱膨脹係數的所述環形接著層的膨脹部分,進而降低所述透光片或所述感測區域因為承受所述環形接著層的膨脹而被擠壓損壞。Furthermore, the sensor packaging structure and manufacturing method disclosed in the embodiment of the present invention, in the sensing module, accommodates the expanded portion of the annular bonding layer having a larger thermal expansion coefficient through the closed space, thereby reducing the risk of the light-transmitting sheet or the sensing area being squeezed and damaged due to the expansion of the annular bonding layer.
以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的專利範圍內。The above disclosed contents are only preferred feasible embodiments of the present invention and are not intended to limit the patent scope of the present invention. Therefore, all equivalent technical changes made by using the contents of the specification and drawings of the present invention are included in the patent scope of the present invention.
100:感測器封裝結構 1:基板 11:上表面 111:模組固定區 112:接合墊 12:下表面 2:固定膠層 3:感測模組 31a:晶圓 31:感測晶片 311:頂面 3111:感測區域 3112:承載區域 3113:連接墊 312:底面 3121:柱形微結構 32:環形接著層 33:透光片 331:外表面 332:內表面 34:環形槽 4:金屬線 5:封裝體 S100:感測器封裝結構的製造方法 S110:前置步驟 S120:第一接合步驟 S130:切割步驟 S140:第二接合步驟 S150:封裝步驟 D:預設方向 T31:厚度 T3121:厚度 T2:厚度 S:封閉空間 H4:最高距離 H33:間隔距離 G:距離 100: sensor package structure 1: substrate 11: upper surface 111: module fixing area 112: bonding pad 12: lower surface 2: fixed adhesive layer 3: sensing module 31a: wafer 31: sensing chip 311: top surface 3111: sensing area 3112: carrying area 3113: connection pad 312: bottom surface 3121: columnar microstructure 32: annular bonding layer 33: light-transmitting sheet 331: outer surface 332: inner surface 34: annular groove 4: metal wire 5: package body S100: manufacturing method of sensor package structure S110: pre-step S120: First joining step S130: Cutting step S140: Second joining step S150: Packaging step D: Default direction T31: Thickness T3121: Thickness T2: Thickness S: Closed space H4: Maximum distance H33: Interval distance G: Distance
圖1為本發明實施例一的感測器封裝結構的製造方法的流程示意圖。FIG. 1 is a schematic diagram of a process for manufacturing a sensor package structure according to a first embodiment of the present invention.
圖2為對應於圖1中的前置步驟的立體示意圖。FIG. 2 is a three-dimensional schematic diagram corresponding to the preceding step in FIG. 1 .
圖3為對應於圖1中的第一接合步驟的立體示意圖。FIG. 3 is a three-dimensional schematic diagram corresponding to the first joining step in FIG. 1 .
圖4為對應於圖1中的切割步驟的立體示意圖。FIG. 4 is a three-dimensional schematic diagram corresponding to the cutting step in FIG. 1 .
圖5為對應於圖1中的第二接合步驟的立體示意圖。FIG. 5 is a three-dimensional schematic diagram corresponding to the second joining step in FIG. 1 .
圖6為對應於圖1中的封裝步驟的立體示意圖。FIG. 6 is a three-dimensional schematic diagram corresponding to the packaging step in FIG. 1 .
圖7為圖6沿剖線VII-VII的剖視示意圖。FIG. 7 is a schematic cross-sectional view along section line VII-VII of FIG. 6 .
圖8為本發明實施例二的感測器封裝結構的局部示意圖(一)。FIG8 is a partial schematic diagram of the sensor packaging structure of the second embodiment of the present invention (I).
圖9為本發明實施例二的感測器封裝結構的局部示意圖(二)。FIG9 is a partial schematic diagram (II) of the sensor packaging structure of the second embodiment of the present invention.
圖10為本發明實施例二的感測器封裝結構的局部示意圖(三)。FIG10 is a partial schematic diagram of the sensor packaging structure of the second embodiment of the present invention (III).
圖11為本發明實施例三的感測器封裝結構的製造方法的流程示意圖。FIG. 11 is a schematic diagram of the process of manufacturing the sensor package structure of the third embodiment of the present invention.
圖12為本發明實施例三的感測器封裝結構的剖視示意圖。FIG12 is a schematic cross-sectional view of the sensor packaging structure of the third embodiment of the present invention.
100:感測器封裝結構 100:Sensor packaging structure
1:基板 1: Substrate
11:上表面 11: Upper surface
111:模組固定區 111: Module fixing area
112:接合墊 112:Joint pad
12:下表面 12: Lower surface
2:固定膠層 2:Fix the glue layer
3:感測模組 3:Sensor module
31:感測晶片 31:Sensor chip
311:頂面 311: Top
3111:感測區域 3111: Sensing area
3112:承載區域 3112: Loading area
3113:連接墊 3113:Connection pad
312:底面 312: Bottom
32:環形接著層 32: Ring-shaped layer
33:透光片 33: Translucent film
331:外表面 331: External surface
332:內表面 332: Inner surface
34:環形槽 34: Annular groove
4:金屬線 4:Metal wire
D:預設方向 D: Default direction
T31:厚度 T31:Thickness
S:封閉空間 S: Closed space
H4:最高距離 H4: Highest distance
H33:間隔距離 H33: Spacing distance
G:距離 G:Distance
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TW200834938A (en) * | 2007-02-08 | 2008-08-16 | Advanced Chip Eng Tech Inc | Image sensor package with die receiving opening and method of the same |
TW200952133A (en) * | 2008-04-29 | 2009-12-16 | Omnivision Tech Inc | Apparatus and method for using spacer paste to package an image sensor |
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CN2891286Y (en) * | 2005-12-30 | 2007-04-18 | 华东科技股份有限公司 | Image sensor packaging structure |
US8125042B2 (en) * | 2008-11-13 | 2012-02-28 | Samsung Electronics Co., Ltd. | Semiconductor package and method of manufacturing the same |
TW201104747A (en) * | 2009-07-29 | 2011-02-01 | Kingpak Tech Inc | Image sensor package structure |
KR101640417B1 (en) * | 2010-01-22 | 2016-07-25 | 삼성전자 주식회사 | Semiconductor package and method for manufacturing of the same |
US9252179B2 (en) * | 2014-06-13 | 2016-02-02 | Visera Technologies Company Limited | Image sensor structures |
JP6433335B2 (en) * | 2015-02-26 | 2018-12-05 | 一般財団法人マイクロマシンセンター | Wireless sensor terminal |
EP3267485B1 (en) * | 2016-07-06 | 2020-11-18 | Kingpak Technology Inc. | Sensor package structure |
CN111048534B (en) * | 2018-10-11 | 2022-03-11 | 胜丽国际股份有限公司 | Sensor Package Structure |
JP2022145017A (en) * | 2021-03-19 | 2022-10-03 | セイコーホールディングス株式会社 | Package for far infrared sensor and manufacturing method thereof, and far infrared sensor and manufacturing method thereof |
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TW200834938A (en) * | 2007-02-08 | 2008-08-16 | Advanced Chip Eng Tech Inc | Image sensor package with die receiving opening and method of the same |
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