TWI831155B - Method for improving electrostatic discharge capacity of driving device and corresponding driving device - Google Patents
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Description
本發明係關於提升驅動裝置靜電放電能力的方法及對應驅動裝置。The present invention relates to a method for improving the electrostatic discharge capability of a driving device and a corresponding driving device.
靜電保護能力對於提升產品的安全性及耐用度都是相當重要的指標之一。在例如顯示器的領域中,作為連接玻璃基板以及主電路板橋梁的驅動裝置上的驅動晶片非常容易受到靜電(例如,來自生產線環境、組裝過程或使用環境)的影響而損壞。因此,驅動晶片中通常會設置靜電保護電路來保護驅動晶片。然而,隨著驅動晶片的輸出/輸入數量的增加,所需要的靜電保護電路的面積也會隨之增加(例如,晶片內佈線的線寬增加導致面積增加),進而增加了驅動晶片成本。Static electricity protection capability is one of the most important indicators for improving product safety and durability. In fields such as displays, the driving chip on the driving device that serves as a bridge connecting the glass substrate and the main circuit board is very susceptible to damage by static electricity (for example, from the production line environment, assembly process or usage environment). Therefore, an electrostatic protection circuit is usually provided in the driver chip to protect the driver chip. However, as the number of outputs/inputs of the driver chip increases, the area of the required electrostatic protection circuit will also increase (for example, the area increases due to the increase in the line width of the wiring within the chip), thereby increasing the cost of the driver chip.
因此,如何在驅動晶片的輸入/輸出日益增加的情況中,控制花費在靜電保護上的成本將會是本領域所要發展的重大課題。Therefore, how to control the cost of electrostatic protection as the input/output of driver chips increases day by day will be a major issue to be developed in this field.
本發明的目的之一在於,在不增加驅動晶片本體的抗靜電/靜電放電能力的情況下(即,不增加驅動晶片的製造成本),提升驅動裝置整體的抗靜電/靜電放電能力。One of the objectives of the present invention is to improve the anti-static/electrostatic discharge capability of the entire driving device without increasing the anti-static/electrostatic discharge capability of the driving chip body (that is, without increasing the manufacturing cost of the driving chip).
本發明提供一種驅動裝置,包含電路基板以及驅動晶片。電路基板包括晶片設置區、連接至一電源端的一第一傳輸路徑以及連接至一地端的一第二傳輸路徑。驅動晶片包括複數連接墊以及分別耦接至該些連接墊的複數靜電放電電路。複數連接墊分別耦接至該晶片設置區上對應之複數設置墊。其中,一第一靜電放電路徑將該些靜電放電電路之正端連接至該電源端,並且一第二靜電放電路徑將該些靜電放電電路之負端連接至該地端。其中,該第一傳輸路徑與該第一靜電放電路徑並聯設置,並且該第二傳輸路徑與該第二靜電放電路徑並聯設置。The invention provides a driving device, which includes a circuit substrate and a driving chip. The circuit substrate includes a chip setting area, a first transmission path connected to a power terminal, and a second transmission path connected to a ground terminal. The driving chip includes a plurality of connection pads and a plurality of electrostatic discharge circuits respectively coupled to the connection pads. A plurality of connection pads are respectively coupled to a corresponding plurality of setting pads on the chip setting area. A first electrostatic discharge path connects the positive terminals of the electrostatic discharge circuits to the power terminal, and a second electrostatic discharge path connects the negative terminals of the electrostatic discharge circuits to the ground terminal. Wherein, the first transmission path and the first electrostatic discharge path are arranged in parallel, and the second transmission path and the second electrostatic discharge path are arranged in parallel.
本發明提供一種提升驅動裝置靜電放電能力的方法,包含:設置一驅動晶片至一電路基板的一晶片設置區上,其中該驅動晶片具有分別耦接至該晶片設置區上之複數設置墊的複數連接墊,以及分別耦接至該些連接墊複數靜電放電電路;電路基板上形成連接至一電源端的一第一傳輸路徑以及連接至一地端的一第二傳輸路徑;將該第一傳輸路徑與該驅動晶片中將該些靜電放電電路之正端連接至該電源端的一第一靜電放電路徑並聯設置;以及將該第二傳輸路徑與該驅動晶片中將該些靜電放電電路之負端連接至該地端的一第二靜電放電路徑並聯設置。The present invention provides a method for improving the electrostatic discharge capability of a driving device, which includes: arranging a driving chip on a chip setting area of a circuit substrate, wherein the driving chip has a plurality of setting pads respectively coupled to a plurality of setting pads on the chip setting area. Connection pads, and a plurality of electrostatic discharge circuits respectively coupled to the connection pads; a first transmission path connected to a power terminal and a second transmission path connected to a ground terminal are formed on the circuit substrate; the first transmission path and A first electrostatic discharge path in the driver chip that connects the positive terminals of the electrostatic discharge circuits to the power terminal is arranged in parallel; and the second transmission path is connected to the negative terminals of the electrostatic discharge circuits in the driver chip. A second electrostatic discharge path at the ground end is arranged in parallel.
基於將電路基板上的第一傳輸路徑與第二傳輸路徑與驅動晶片中的第一靜電放電路徑、第二靜電放電路徑並聯設置,來降低第一靜電放電路徑及/或第二靜電放電路徑的阻抗。藉此達到提升驅動裝置整體的抗靜電/靜電放電能力的目的。The first transmission path and the second transmission path on the circuit substrate are arranged in parallel with the first electrostatic discharge path and the second electrostatic discharge path in the driving chip to reduce the risk of the first electrostatic discharge path and/or the second electrostatic discharge path. impedance. This achieves the purpose of improving the overall anti-static/electrostatic discharge capability of the drive device.
對本文中使用諸如「第一」、「第二」等名稱的元件的任何引用通常不限制這些元件的數目或順序。相反,這些名稱在本文中用作區分兩個或更多個元件或元件實例的便利方式。因此,應當理解的是,請求項中的名稱「第一」、「第二」等不一定對應於書面描述中的相同名稱。此外,應當理解的是,對第一和第二元件的引用並不表示只能採用兩個元件或者第一元件必須在第二元件之前。關於本文中所使用之『包含』、『包括』、『具有』、『含有』等等,均為開放性的用語,即意指包含但不限於。Any reference herein to elements using designations such as "first," "second," etc. generally does not limit the number or order of these elements. Rather, these names are used herein as a convenient way to distinguish between two or more elements or instances of elements. Therefore, it should be understood that the names "first," "second," etc. in the claims do not necessarily correspond to the same names in the written description. Furthermore, it should be understood that reference to first and second elements does not imply that only two elements may be employed or that the first element must precede the second element. The words "includes", "includes", "has", "contains", etc. used in this article are all open terms, which mean including but not limited to.
術語「耦接」在本文中用於指代兩個結構之間的直接或間接電耦接。例如,在間接電耦接的一個示例中,一個結構可以經由電阻器、電容器或電感器等被動元件被耦接到另一結構。The term "coupled" is used herein to refer to a direct or indirect electrical coupling between two structures. For example, in one example of indirect electrical coupling, one structure may be coupled to another structure via passive components such as resistors, capacitors, or inductors.
在本發明中,詞語「示例性」、「例如」用於表示「用作示例、實例或說明」。本文中描述為「示例性」、「例如」的任何實現或方面不一定被解釋為比本發明的其他方面優選或有利。如本文中關於規定值或特性而使用的術語「大約」、「大致」旨在表示在規定值或特性的一定數值(例如,10%)以內。In the present invention, the words "exemplary" and "for example" are used to mean "serving as an example, instance or illustration". Any implementation or aspect described herein as "exemplary," "such as" or "such as" is not necessarily to be construed as preferred or advantageous over other aspects of the invention. The terms "approximately" and "approximately" as used herein with respect to a specified value or characteristic are intended to mean within a certain numerical value (e.g., 10%) of the specified value or characteristic.
請參照圖1,本發明的驅動裝置10可以例如用於顯示器中。具體來說,驅動裝置10可以有複數輸入端Pin及複數輸出端Pout,輸入端Pin及輸出端Pout分別透過訊號傳輸線TL耦接至驅動晶片101的對應連接墊/腳位Pad上。當驅動裝置10配置於顯示器中時,輸入端Pin及輸出端Pout分別連接顯示器的主電路板20以及顯示面板(玻璃基板)30。然而本發明的驅動裝置10,不應受限於其應用範圍,任何合適的應用領域皆應屬本發明之範疇。此外,圖1所示的輸入端Pin及輸出端Pout數量以及訊號傳輸線TL的布局方式僅是示例,並非要限制本發明。Please refer to FIG. 1 , the
請參照圖2,圖2說明本發明的驅動裝置10,包含電路基板102以及驅動晶片101。電路基板102包括晶片設置區1021、連接至一電源端PW的第一傳輸路徑L1以及連接至接地端GN的第二傳輸路徑L2。驅動晶片101包括複數連接墊Pad1, …, Padn以及分別耦接至該些連接墊的複數靜電放電電路ESD1, …, ESDn。複數連接墊Pad1, …, Padn分別耦接至晶片設置區1021上對應之複數設置墊(圖2中與複數連接墊Pad1, …, Padn疊合。然而,複數設置墊可以依情況大於或小於複數連接墊Pad1, …, Padn)。其中,第一靜電放電路徑L3將靜電放電電路ESD1, …, ESDn之正端ESDp1, …, ESDpn連接至電源端PW。其中,第一傳輸路徑L1與第一靜電放電路徑L3並聯設置。Please refer to FIG. 2 , which illustrates the
具體來說,電路基板102可以為硬式的(例如,玻璃纖維為基板的印刷電路板)或是具有可撓性的軟性電路板(例如,用於薄膜覆晶COF結構的軟性電路板)。驅動晶片101可以透過焊接或是腳位接合等方式設置於晶片設置區1021。須說明的是,本發明並不受限於驅動晶片101上連接墊的數量以及靜電放電電路的數量,圖1所繪製的示例僅是用來說明,驅動晶片101上連接墊的數量以及靜電放電電路的數量可以依照實際需求來選擇不同型號/規格。晶片設置區1021亦可以根據所選擇的驅動晶片101的封裝方式、輸出/輸入腳位定義、形狀來調整晶片設置區1021的大小、樣式或設置墊的安排方式等等。此外,電路基板102上的第一傳輸路徑L1與第二傳輸路徑L2可以例如透過在電路基板上產生跡線(trace)或是利用導線直接進行連接而形成。Specifically, the
電路基板102上的第一傳輸路徑L1與第二傳輸路徑L2以及驅動晶片101上的第一靜電放電路徑L3可以簡化為圖3所示。請參照圖3,連接墊Padn耦接至靜電放電電路ESDn。靜電放電電路ESDn可以為兩個二極體DPn、DNn,連接墊Padn耦接至二極體DPn的陽極(Anode)及二極體DNn的陰極(Cathode)。此外,於一實施例中,驅動裝置10的驅動晶片101還包含將靜電放電電路ESD1, …, ESDn之負端ESDn1, …, ESDnn連接至接地端GN的第二靜電放電路徑L4,並且第二傳輸路徑L2與第二靜電放電路徑L4並聯設置。然而,本發明的靜電放電電路ESDn不應受限於圖3所示,且本領域具通常知識者可以任意調整/增加主動元件或被動元件。且靜電放電電路元件亦可採用例如瞬態抑制二極體(TVS)或其他本領域習知的電路元件及/或架構。The first transmission path L1 and the second transmission path L2 on the
靜電放電電路ESD1的觸發電壓TV1與靜電放電電路ESDn的觸發電壓TVn如下式表示: 其中, 、 表示為二極體DP1、DPn的導通電壓, 為靜電放電電路的鉗位(clamp)電壓。DP1、DPn的導通電壓 、 及/或靜電放電電路的鉗位電壓 可以透過晶片製程參數或元件參數進行預設。根據上述公式可以得知,靜電放電電路ESD1-ESDn的觸發電壓TV1-TVn將會與靜電放電電路ESD1-ESDn的靜電電流疏導路徑的電阻相關。換句話說,當靜電EC發生於靜電放電電路ESD1-ESDn任一者或其對應的連接墊上時,靜電電流 經由該第一傳輸路徑與該第一靜電放電路徑L3的至少一部分自地端流出。舉例來說,如圖4A所示,當靜電EC發生於靜電放電電路ESD1時,靜電電流 流經第一傳輸路徑L1的一段L11及第一靜電放電路徑L3的一段L31,所以靜電電流 流經路徑的阻抗為第一傳輸路徑L1的一段L11的阻抗 並聯第一靜電放電路徑L3的一段L31的阻抗 。如圖4B所示,而當靜電EC發生於靜電放電電路ESDn時,靜電電流 流經第一傳輸路徑L1的全部及第一靜電放電路徑L3的一全部,此時靜電電流 流經路徑的阻抗為第一傳輸路徑L1的阻抗 並聯第一靜電放電路徑L3的阻抗 。須說明的是,上述舉例靜電疏導路徑僅是舉例,部分靜電情況(例如,靜電與接觸墊的相對電壓方向、靜電出現位置等等)亦可經由第二傳輸路徑L2與第二靜電放電路徑L4疏導。在此並不贅述。於一實施例中,靜電電流流入靜電保護電路(例如,功率鉗位(Power clamp)等電路)後,再經地端(相對於靜電保護電路的輸入端電位最低/較低者)流出。 The trigger voltage TV1 of the electrostatic discharge circuit ESD1 and the trigger voltage TVn of the electrostatic discharge circuit ESDn are expressed by the following formula: in, , Expressed as the conduction voltage of diodes DP1 and DPn, is the clamping voltage of the electrostatic discharge circuit. Turn-on voltage of DP1 and DPn , and/or the clamping voltage of the electrostatic discharge circuit It can be preset through chip process parameters or component parameters. According to the above formula, it can be known that the trigger voltages TV1-TVn of the electrostatic discharge circuits ESD1-ESDn will be related to the resistance of the electrostatic current conduction paths of the electrostatic discharge circuits ESD1-ESDn. In other words, when static electricity EC occurs on any one of the electrostatic discharge circuits ESD1-ESDn or its corresponding connection pad, the electrostatic current At least a part of the first transmission path and the first electrostatic discharge path L3 flows out from the ground end. For example, as shown in Figure 4A, when static electricity EC occurs in the electrostatic discharge circuit ESD1, the electrostatic current The electrostatic current flows through a section L11 of the first transmission path L1 and a section L31 of the first electrostatic discharge path L3. The impedance flowing through the path is the impedance of a section L11 of the first transmission path L1 The impedance of a section L31 of the first parallel electrostatic discharge path L3 . As shown in Figure 4B, when static electricity EC occurs in the electrostatic discharge circuit ESDn, the electrostatic current The electrostatic current flows through all of the first transmission path L1 and part of the first electrostatic discharge path L3. The impedance flowing through the path is the impedance of the first transmission path L1 Impedance of parallel first electrostatic discharge path L3 . It should be noted that the above examples of static electricity dissipation paths are only examples. Some static electricity conditions (for example, the relative voltage direction of static electricity and contact pads, the location where static electricity occurs, etc.) can also be transmitted through the second transmission path L2 and the second electrostatic discharge path L4 Guidance. I won’t go into details here. In one embodiment, the electrostatic current flows into the electrostatic protection circuit (for example, a circuit such as a power clamp) and then flows out through the ground terminal (the one with the lowest/lower potential relative to the input terminal of the electrostatic protection circuit).
承上所述,驅動晶片101內的第一靜電放電路徑L3與第二靜電放電路徑L4是在晶片製造/封裝時已形成,所以第一靜電放電路徑L3與第二靜電放電路徑L4的阻抗並沒有辦法根據需求有所調整,僅能透過更換元件等方式進行調整。因為第一靜電放電路徑L3與第二靜電放電路徑L4的阻抗值調整不易。並且如果將第一靜電放電路徑L3與第二靜電放電路徑L4的阻抗值調整至需求阻抗則可能例如需要較大的晶片面積或投入其他成本。所以可以透過調整電路基板102上的第一傳輸路徑L1與第二傳輸路徑L2的阻抗,並分別與第一靜電放電路徑L3與第二靜電放電路徑L4並聯,來減少靜電電流
流過路徑的阻抗值。於一實施例中,第一傳輸路徑L1的阻抗小於該第一靜電放電路徑L3的阻抗,並且該第二傳輸路徑L2的阻抗小於該第二靜電放電路徑L4的阻抗。於一實施例中,第一傳輸路徑L1與第二傳輸路徑L2的材料較佳為銅等導電率較佳的良導體。
As mentioned above, the first electrostatic discharge path L3 and the second electrostatic discharge path L4 in the
於一實施例中,如圖5所示,驅動晶片101還包括複數放電連接墊EPad1,…, EPadn。放電連接墊EPad1,…, EPadn分別連接靜電放電電路之正端ESDp1, …, ESDpn。放電連接墊EPad1,…, EPadn分別連接至第一傳輸路徑L1。此外,對於接地端,驅動晶片101也可以設置接地連接墊GPad1,…, GPadn並透過第二傳輸路徑L2串聯接地連接墊GPad1,…, GPadn。透過此設置,可以使驅動晶片101的內部線路與電路基板102上所布置好的跡線(例如,連接到電源端的第一傳輸路徑L1及/或連接到地端的第二傳輸路徑L2)連接。對於此實施例,電路基板102的晶片設置區1021還可以設置對應放電連接墊EPad1,…, EPadn以及接地連接墊GPad1,…, GPadn的設置墊(未示於圖中),並透過焊接等方式將布局好的跡線與放電連接墊EPad1,…, EPadn以及接地連接墊GPad1,…, GPadn連接。須說明的是,圖5所示出的放電連接墊EPad1,…, EPadn以及接地連接墊GPad1,…, GPadn的數量以及布局方式僅是示例並非要限制本發明。In one embodiment, as shown in FIG. 5 , the
於另一方面,請參照圖,圖6說明一種提升驅動裝置靜電放電能力的方法,包含:步驟S1設置驅動晶片至電路基板的晶片設置區上,其中該驅動晶片具有分別耦接至該晶片設置區上之複數設置墊的複數連接墊,以及分別耦接至該些連接墊複數靜電放電電路。須說明的是,本方法並不受限於驅動晶片設置於電路基板的晶片設置區上的方式(例如,焊接或以腳位插入等)。較佳而言,驅動晶片設置於電路基板的晶片設置區上後,將會使驅動晶片的輸入/輸出(連接墊)與電路基板上預設的線路進行連接,以正常使用此驅動晶片。On the other hand, please refer to the figures. FIG. 6 illustrates a method for improving the electrostatic discharge capability of a driving device, including: Step S1 of arranging a driving chip on a chip setting area of a circuit substrate, wherein the driving chip has a chip configuration that is respectively coupled to the chip setting. A plurality of connection pads are provided on the area, and a plurality of electrostatic discharge circuits are respectively coupled to the connection pads. It should be noted that this method is not limited to the method of disposing the driver chip on the chip setting area of the circuit substrate (for example, soldering or pin insertion, etc.). Preferably, after the driver chip is placed on the chip setting area of the circuit substrate, the input/output (connection pad) of the driver chip will be connected to the preset lines on the circuit substrate, so that the driver chip can be used normally.
步驟S2電路基板上形成連接至電源端的第一傳輸路徑以及連接至地端的一第二傳輸路徑;步驟S3將第一傳輸路徑與驅動晶片中將靜電放電電路之正端連接至電源端的第一靜電放電路徑並聯設置;以及步驟S4將第二傳輸路徑與驅動晶片中將靜電放電電路之負端連接至地端的第二靜電放電路徑並聯設置。須說明的是,本發明不應受限於方法步驟順序,任何本領域具通常知識者可以根據電路製程技術將本發明所述技術順序加以調整。舉例來說,第一傳輸路徑與第二傳輸路徑等也可以在驅動晶片設置於電路基板前,就已在電路基板上形成,待驅動晶片設置於電路基板後,第一傳輸路徑即與第一靜電放電路徑並聯設置,並且(同時地)第二傳輸路徑與第二靜電放電路徑並聯設置。因此,任何本領域通常知識者基於本文的內容對於本發明之方法的實施順序進行合適調整皆應屬於本發明之範疇。Step S2 forms a first transmission path connected to the power terminal and a second transmission path connected to the ground terminal on the circuit substrate; Step S3 connects the first transmission path and the first electrostatic terminal in the driver chip to connect the positive terminal of the electrostatic discharge circuit to the power terminal. The discharge paths are arranged in parallel; and step S4 is to set the second transmission path in parallel with the second electrostatic discharge path in the driver chip that connects the negative end of the electrostatic discharge circuit to the ground. It should be noted that the present invention should not be limited to the sequence of method steps. Anyone with ordinary knowledge in the art can adjust the technical sequence described in the present invention according to the circuit manufacturing technology. For example, the first transmission path and the second transmission path can also be formed on the circuit substrate before the driving chip is disposed on the circuit substrate. After the driving chip is disposed on the circuit substrate, the first transmission path is connected to the first transmission path. The electrostatic discharge path is provided in parallel, and (simultaneously) the second transmission path is provided in parallel with the second electrostatic discharge path. Therefore, any person with ordinary skill in the art who makes appropriate adjustments to the implementation sequence of the method of the present invention based on the content of this article should fall within the scope of the present invention.
提供對本發明的先前描述以使得本領域具通常知識者能夠製作或實施本發明。對於本領域具通常知識者來說,對本發明的各種修改將是很清楚的,並且在不脫離本發明的精神或範圍的情況下,本文中定義的一般原理可以應用於其他變化。因此,本發明不旨在限於本文中描述的示例,而是符合與本文中發明的原理和新穎特徵一致的最寬範圍。The previous description of the invention is provided to enable a person of ordinary skill in the art to make or practice the invention. Various modifications to the invention will be apparent to those skilled in the art, and the general principles defined herein may be applied to other changes without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the examples described herein but is to be accorded the widest scope consistent with the principles and novel features of the invention herein.
10:驅動裝置 20:主電路板 30:顯示面板 101:驅動晶片 102:電路基板 1021:晶片設置區 L1:第一傳輸路徑 L2:第二傳輸路徑 L3:第一靜電放電路徑 L4:第二靜電放電路徑 ESD1, …, ESDn:靜電放電電路 ESDp1, … ESDpn:正端 ESDn1, … ESDnn:負端 EC:靜電 EPad1, …, EPadn:放電連接墊 GPad1, …, GPadn:接地連接墊 Pad1, …, Padn:連接墊 Pin:輸入端 Pout:輸出端 PW:電源端 GN:接地端 TL:訊號傳輸線 S1, S2, S3, S4:步驟 10:Driving device 20:Main circuit board 30:Display panel 101: Driver chip 102:Circuit substrate 1021: Chip setting area L1: first transmission path L2: Second transmission path L3: First electrostatic discharge path L4: Second electrostatic discharge path ESD1, …, ESDn: electrostatic discharge circuit ESDp1, … ESDpn: positive end ESDn1, … ESDnn: negative terminal EC: static electricity EPad1, …, EPadn: discharge connection pad GPad1, …, GPadn: Ground connection pads Pad1, …, Padn: connection pad Pin: input terminal Pout: output terminal PW: power terminal GN: ground terminal TL: signal transmission line S1, S2, S3, S4: steps
圖1為本發明一實施例中,驅動裝置用於顯示器的示意圖。FIG. 1 is a schematic diagram of a driving device used in a display according to an embodiment of the present invention.
圖2為本發明一實施例中,電路基板以及驅動晶片於驅動裝置中設置的示意圖。FIG. 2 is a schematic diagram of a circuit substrate and a driving chip installed in a driving device in an embodiment of the present invention.
圖3為本發明一實施例中,靜電放電路徑的線路圖。FIG. 3 is a circuit diagram of an electrostatic discharge path in an embodiment of the present invention.
圖4A-B為本發明一實施例中,靜電放電路徑與靜電發生位置的關係線路圖。4A-B are circuit diagrams showing the relationship between electrostatic discharge paths and static electricity generation locations in an embodiment of the present invention.
圖5為本發明一實施例中,電路基板以及驅動晶片於驅動裝置中設置的示意圖。FIG. 5 is a schematic diagram of a circuit substrate and a driving chip installed in a driving device in an embodiment of the present invention.
圖6為本發明一實施例中,驅動方法的流程圖。Figure 6 is a flow chart of a driving method in an embodiment of the present invention.
呈現附圖以幫助描述本發明的各個方面,為簡化附圖及突顯附圖所要呈現之內容,附圖中習知的結構或元件將可能以簡單示意的方式繪出或是以省略的方式呈現。例如,元件的數量可以為單數亦可為複數。提供這些附圖僅僅是為了解說這些方面而非對其進行限制。The drawings are presented to help describe various aspects of the present invention. In order to simplify the drawings and highlight the content to be presented in the drawings, well-known structures or elements in the drawings may be drawn in a simple schematic manner or presented in an omitted manner. . For example, the number of elements may be singular or plural. The drawings are provided solely to illustrate these aspects and not to limit them.
10:驅動裝置 10:Driving device
101:驅動晶片 101: Driver chip
102:電路基板 102:Circuit substrate
1021:晶片設置區 1021: Chip setting area
L1:第一傳輸路徑 L1: first transmission path
L2:第二傳輸路徑 L2: Second transmission path
ESD1,...,ESDn:靜電放電電路 ESD1,...,ESDn: electrostatic discharge circuit
PW:電源端 PW: power terminal
GN:接地端 GN: ground terminal
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US20040027742A1 (en) * | 2002-08-09 | 2004-02-12 | Miller James W. | Electrostatic discharge protection circuitry and method of operation |
TW201320052A (en) * | 2011-11-10 | 2013-05-16 | Samsung Electronics Co Ltd | Display driving device and display system with improved protection against electrostatic discharge |
TW201742345A (en) * | 2016-03-18 | 2017-12-01 | 英特爾智財公司 | Area-saving and robust electrostatic discharge circuit |
US20210384723A1 (en) * | 2020-06-09 | 2021-12-09 | Western Digital Technologies, Inc. | Electrostatic Discharge Circuit Using Booster Cell |
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US20040027742A1 (en) * | 2002-08-09 | 2004-02-12 | Miller James W. | Electrostatic discharge protection circuitry and method of operation |
TW201320052A (en) * | 2011-11-10 | 2013-05-16 | Samsung Electronics Co Ltd | Display driving device and display system with improved protection against electrostatic discharge |
TW201742345A (en) * | 2016-03-18 | 2017-12-01 | 英特爾智財公司 | Area-saving and robust electrostatic discharge circuit |
US20210384723A1 (en) * | 2020-06-09 | 2021-12-09 | Western Digital Technologies, Inc. | Electrostatic Discharge Circuit Using Booster Cell |
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