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TWI821285B - 處理基板的方法及保護處理腔室的方法 - Google Patents

處理基板的方法及保護處理腔室的方法 Download PDF

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TWI821285B
TWI821285B TW108115160A TW108115160A TWI821285B TW I821285 B TWI821285 B TW I821285B TW 108115160 A TW108115160 A TW 108115160A TW 108115160 A TW108115160 A TW 108115160A TW I821285 B TWI821285 B TW I821285B
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protective film
chamber
processing chamber
substrate
processing
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TW202003903A (zh
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蘇坦 馬立克
史林尼法斯Ｄ 奈馬尼
奇偉 梁
艾德柏 坎
麥克斯米利安 克雷蒙斯
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美商應用材料股份有限公司
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Abstract

本文的系統與方法的實施例關於經由ALD或CVD在處理腔室的複數個內部部件上原位形成保護膜。塗佈具有保護膜的內部部件包括腔室側壁、腔室底部、基板支撐台座、噴頭、及腔室頂部。保護膜可為包括非晶Si、碳矽烷、多晶矽、SiC、SiN、SiO2、Al2O3、AlON、HfO2、或Ni3Al的各種組成物，且在厚度上可從約80nm至約250nm變化。

Description

處理基板的方法及保護處理腔室的方法
本揭示的實施例大體上關於處理一或多個基板的設備、系統與方法，且更明確地關於用於處理腔室製備的設備、系統與方法。
基板處理腔室可經受超過200℃的高溫與超過1巴的高壓，其創造會導致處理腔室的內部部件劣化的惡劣腐蝕環境。內部部件暴露於這些高溫與高壓環境，尤其是結合在基板處理期間導入處理腔室的處理氣體。可利用各種塗佈與膜以降低此腐蝕，然而，這些塗佈與膜會不夠強健以承受處理條件而在處理腔室的使用期間會腐蝕或劣化。此腐蝕會負面地影響經處理的基板，例如藉由腐蝕表面剝落或脫落或者分離，並落下在基板之上與汙染基板。
因此，本領域中需要用於處理腔室的內部部件之改善保護。
在此論述在包括處理腔室的內部表面之表面上形成保護膜的各種方法。在一個實例中，方法包括在處理腔室中經由ALD或CVD在複數個內部部件上形成保護膜，內部部件包含腔室側壁、腔室底部、基板支撐台座、噴頭、及腔室頂部；及在形成保護膜之後，在基板支撐台座上定位基板。基板接觸不包含保護膜的基板支撐台座的一部分。
在另一實例中，保護處理腔室的方法包括：導入至少一種氣體至處理腔室；從處理腔室的複數個內部部件移除第一保護膜，以回應在處理腔室中至少一種氣體的定位。方法進一步包括：在處理腔室中經由ALD或CVD在複數個內部部件上形成第二保護膜，其中第二保護膜包含非晶Si、碳矽烷、多晶矽、SiC、SiN、SiO2 、Al2 O3 、AlON、HfO2 、或Ni3 Al。此外在此實例中，方法包括在形成第二保護膜之後，在基板支撐台座上定位基板。
在另一實例中，處理基板的方法包括：導入至少一種氣體至處理腔室；從處理腔室的複數個內部部件移除第一保護膜，以回應在處理腔室中至少一種氣體的定位。方法進一步包括：在處理腔室中經由ALD或CVD在複數個內部部件上形成第二保護膜，其中第二保護膜包含非晶Si、碳矽烷、多晶矽、SiC、SiN、SiO2 、Al2 O3 、AlON、HfO2 、或Ni3 Al。方法進一步包括：在形成第二保護膜之後，在基板支撐台座上定位基板。
本文論述的系統與方法關於基板處理腔室的製備，使得處理腔室能夠承受持續超過400ºC的處理溫度而沒有處理腔室的內部部件之腐蝕或其他劣化。處理腔室的內部部件可由下列材料所形成：鋁、不鏽鋼、鎳基超合金、或其他材料，這些材料會被高溫、高壓及/或處理腔室中的蝕刻氣體所劣化。內部部件的劣化會造成來自一或多個內部部件的金屬微粒物質汙染定位在處理腔室中的一或多個基板。此汙染負面地影響處理腔室中的即時處理及下游操作兩者。再者，內部處理腔室部件的劣化減少內部部件的壽命，這增加維護與停機成本。
本文論述的保護膜保護處理腔室的內部部件免於腐蝕與侵蝕，減少處理腔室與在處理腔室中製造的基板之汙染事件。保護膜用於保護處理腔室(包括操作在1巴或更大壓力下的高壓處理腔室)免於腐蝕。使用化學氣相沉積(CVD)或原子層沉積(ALD)將保護膜原位地形成在處理腔室的內部腔室主體之內。保護膜形成在內部腔室主體的一些或所有的暴露表面上，包括內部腔室主體壁、噴頭、及基板支撐台座的至少一部分上。在一個實例中，處理腔室的噴頭用於分配一或多個前驅物，保護膜由此一或多個前驅物所形成。在一些實施例中，保護覆蓋放置在處理腔室中的基板支撐台座的一些或所有的頂部表面上。保護覆蓋可定位在基板支撐台座上，使得等於或大於基板直徑之台座上的一區域在沉積期間不被保護膜所塗佈。保護覆蓋可用於保護基板的背側免於來自保護膜的汙染，此汙染會負面地影響下游操作。在一個實例中，當基板定位在處理腔室中於保護膜已經沉積之後的基板支撐台座上時，基板不接觸保護膜。在替代實施例中，不使用保護覆蓋。在此實例中，基板支撐台座的整個表面(包括一或多個基板被定位用於處理處)被保護膜所覆蓋。
保護膜可被原位地形成並在處理腔室中處理一或多個基板或基板批量之後被原位地移除。相對地，處理腔室的非原位塗佈會具有挑戰，諸如由於再塗佈的停機時間。在包括保護膜的處理腔室中或在保護膜的形成之後的其他腔室中的基板處理可包括一或多個層的沉積。不同的深寬比的複數個特徵之形成及/或在一些實施例中可包括以硬遮罩處理基板，包括圖案化硬遮罩。在一實施例中，可執行保護膜的移除，藉由使用一或多種氣體，包括氟(F)氣體或三氟化氮(NF3 )氣體。F或NF3 氣體可在遠端電漿源(RPS)中或原位地在處理腔室中離子化成電漿。在一個實例中，RPS用於形成NF3 電漿。在移除保護膜之後，與先前施加的保護膜相同或不同組成的新保護膜可施加至內部腔室主體。保護膜由下列材料所形成，包括：非晶矽(a-Si)、碳矽烷、多晶矽、碳化矽(SiC)、氮化矽(SiN)、二氧化矽(SiO2 )、氧化鋁(Al2 O3 )、氮氧化鋁(AlON)、氧化鉿(HfO2 )、鋁化鎳(Ni3 Al)、或前述物的組合。本文所論述之保護膜的使用因此增加處理腔室的內部部件的壽命並減少由於這些部件的腐蝕導致的碎片。
圖1是根據本揭示的某些實施例的示例處理腔室100的剖面視圖。處理腔室100具有根據本揭示的某些實施例而形成的保護膜120。處理腔室100包括形成圍繞內腔室主體104的外腔室主體102。在一實施例中，外腔室主體102包括鋁而內腔室主體104包括不鏽鋼。在替代實施例中，外腔室主體102包括鋁而內腔室主體104包括石英、鋁、或諸如Hastealloy®的鎳基超合金。可藉由腔室壁122、腔室底部124、及由腔室蓋108的底表面形成的腔室頂部108A來界定內腔室主體104。在一實施例中，真空形成在外腔室主體102與內腔室主體104之間的空間132中。在一實施例中，腔室壁122、腔室底部124、腔室頂部108A、及本文論述的額外部件可由一或多種材料形成，諸如不鏽鋼、石英、鎳基超合金、或鋁。內腔室主體104暴露於高溫、高壓，及在一些實例中，暴露於蝕刻氣體，蝕刻氣體會腐蝕並使內腔室主體104部件劣化。在一個實例中，處理腔室100耦接至遠端電漿源(RPS)112、氣體面板118、冷凝器114、及蒸汽產生器116。
在一實施例中，在處理腔室100的操作期間，處理腔室100可被加壓並具有以各種方式控制的溫度。在一個實例中，使用位於內腔室主體104與真空泵138之間的節流閥136控制處理空間134內的壓力。使用一或多個加熱元件128A控制腔室壁122的表面處的溫度。一或多個加熱元件128A可為位於腔室壁122中及/或內腔室主體104的腔室蓋108中的固體元件或含液體元件。在一些實例中，一或多個加熱元件128A安置在基板支撐台座106中。在一個實例中，腔室蓋108可被加熱從100ºC至300ºC。複數個加熱元件128A可安置在內腔室主體104的腔室壁122中並電氣地耦接至電源128。在圖1的實例中，加熱元件128A顯示成兩對的加熱元件128A安置在腔室壁122中或耦接至腔室壁122、一對的加熱元件128A安置在基板支撐台座106中或耦接至基板支撐台座106、及一對的加熱元件128A安置在腔室蓋108中或耦接至腔室蓋108。在替代實施例中，不同於圖1所示的更多或更少的加熱元件128A可以各種配置使用在腔室壁122中、腔室蓋108中，及在一些實施例中，在基板支撐台座106的之內或耦接至基板支撐台座106。在處理腔室100中的一個蝕刻實例中，從電漿釋放化學反應離子，此電漿可經由RPS 112而導入或經由如下文論述的其他方式在處理腔室100中形成。一旦從電漿釋放，化學反應離子撞擊定位在基板支撐台座106上的基板146。當化學反應離子撞擊基板時，來自基板146的表面之暴露材料被移除。
在處理腔室100的另一實例中，可使用RF電源140與RF偏壓功率142產生電漿。RF電源140與RF偏壓功率142的每一者耦接至處理腔室100並經配置以施加功率(及在一些實例中為功率脈衝)至腔室壁122及/或基板支撐台座106。在一些實例中也可施加負偏壓至基板支撐台座106。在一個實例中，藉由從RF電源140施加RF功率至複數個天線片段(未圖示)而將在處理空間134之內由耦接至氣體面板118的氣體源(未示出)形成的氣態混合物點燃成電漿。
進一步在處理腔室100中，噴頭110可移除地耦接至處理腔室100靠近腔室頂部108A。噴頭110用於將複數個氣體，例如，通過氣體面板118供給的氣體，分配在內腔室主體104中。在基板處理操作期間、及在本文論述的保護膜的沉積與移除期間、或在處理腔室100的內部執行的其他清洗操作中，噴頭110可用於分配氣體與氣體混合物。噴頭110可包括複數個島126及形成在各相鄰對的島126之間的複數個空間144。島126被連接(未在此示出)，使得氣體流動通過噴頭110並進入處理空間134，尤其，氣體流動通過噴頭110於空間144之間並進入處理空間134。因此，當如本文所論述而形成保護膜120時，由於噴頭110用於形成保護膜120，保護膜形成在暴露於用以形成保護膜120的氣態成分之噴頭110的表面上。保護膜120也形成在內腔室主體104的暴露表面上，包括腔室壁122。在可與本文的其他實例結合的一些實例中，腔室頂部108A、基板支撐台座106、及腔室底 部124的一或多者及任何其他暴露表面也可具有形成在上方的保護膜120。
在一實施例中，控制器130耦接至處理腔室100並經配置以執行複數個指令。在一個實例中，由控制器130執行的複數個指令係與基板處理相關聯。基板處理可包括操作，諸如層沉積及圖案化，以及腔室清洗。在另一實例中，控制器130執行的複數個指令與形成保護膜120於腔室壁122、底部124、頂部108A、基板支撐台座106或內腔室主體104的其他暴露表面的一或多者之上相關聯。在一實施例中，保護覆蓋(未示出)可定位在基板支撐台座106上，其覆蓋基板支撐台座106的一些或所有的直徑106A。因此，可選地，基板支撐台座106的一部分(在此實例中顯示為未塗佈區106B)未被保護膜120塗佈並保持暴露。保護膜120也可形成在噴頭110之上，且可被形成為從80nm至250nm或從90nm至120nm的平均厚度。在一些實例中，保護膜120的平均厚度為約100nm。在可與本文的其他實例結合的替代實例中，不使用保護覆蓋且由直徑106A所指示的區域被保護膜120所塗佈。
在處理腔室100的操作期間，在形成保護膜120之後，基板146放置在基板支撐台座106的未塗佈區106B中的基板支撐台座106之上。氣態成分從氣體面板118通過噴頭110的複數個島126而供給至處理腔室100，複數個島126作為氣體的入口埠。一或多個氣態成 分從氣體面板118被同時地供給，或以交替的及/或迭代的方式供給，以在處理空間134中形成氣態混合物。藉由在處理腔室100中形成F或NF3電漿(或經由RPS 112導入電漿)，經由噴頭110以移除保護膜120，而可移除保護膜120。保護膜120的移除可發生在處理腔室中的一或多個循環之後，例如，在一或多個膜(在此未示出)形成在基板146上之後，或在形成複數個膜之後、或在圖案化複數個膜之後、或前述情況的組合。
在一實施例中，在基板146處理期間，藉由穩定基板支撐台座106的溫度而控制定位在處理腔室100中的基板146的溫度。來自氣體面板118的氦或另一氣體流入界定在基板146與基板支撐台座106的支撐表面106C之間的氣室(未示出)。基板146座落在未塗佈區106B中。氦氣用於促進基板146與基板支撐台座106之間的熱傳遞。在可包括蝕刻處理之處理腔室100中的處理期間，藉由電漿逐漸地加熱基板146至200℃與600℃之間的穩態溫度。使用腔室頂部108A與基板支撐台座106兩者的溫度控制，及在一些情況中，腔室壁122的溫度控制，基板146在處理期間保持在預定溫度。當處理腔室100使用於高溫及/或高壓時，內腔室主體104暴露至惡劣環境。處理腔室100中蝕刻氣體的存在會進一步提供內腔室主體104所遭受的惡劣環境。保護膜120因此保護內腔室主體104，防止腔室頂部108A、腔室底部124、腔室壁122、噴頭110、或基板支撐台座106的一或多者的劣化。
圖2是在可類似於圖1中處理腔室100的處理腔室中諸如保護膜120的保護膜之原位形成的方法200。在方法200中，在操作202，製備處理腔室用於原位保護膜形成。在操作202之處理腔室的製備可包括加熱處理腔室至從約300ºC至約600ºC的溫度及使用例如N2 在外腔室主體與內腔室主體之間創立真空。在操作202的製備可進一步包括在內腔室主體中創立從約1托至約600托的壓力。當在內腔室主體與外腔室主體之間保持真空的同時，可執行在操作202的製備。
在操作204，在操作202的製備處理腔室之後，保護膜形成在處理腔室的複數個內部部件(其可被替代地稱為暴露表面)之上。使用後文論述的前驅物在操作204形成保護膜至目標厚度，其可從80 nm至250 nm。內部部件包括基板支撐台座、內部腔室主體壁、頂部、底部、及噴頭特徵上的至少一者，如圖1中所論述。在一個實例中，在操作204形成的保護膜係使用化學氣相沉積(CVD)形成。在另一實例中，在操作204形成的保護膜係使用原子層沉積(ALD)形成。在一實施例中，無論是在操作204使用CVD或ALD，處理腔室係在從2托至30托的壓力下。在可與本文的其他實例結合的另一實例中，在操作204的處理腔室的溫度從250ºC至750ºC。在可與本文的其他實例結合的又另一實例中，在操作204的處理腔室中存在有一或多種氣體，諸如Si2H6、SiH4、N2、N2O、NH3、Ar、或H2。在操作204使用ALD的實例中，ALD前驅物四(乙基甲基醯胺基)鉿(IV)(TEMAH)與三甲基鋁(TMA)及一或多個前驅物使用在ALD腔室中以形成具有Al2O3、AlON、HfO2、或Ni3Al組成的保護膜。在另一實施例中，在操作204的ALD形成保護膜為包括非晶Si、碳矽烷、多晶矽、SiC、SiN、或SiO2的一或多者的組成物。
在操作204形成的保護膜可形成為從80nm至250nm的平均厚度。在沒有基板定位在處理腔室中的情況下執行操作202與204。在操作206，一基板或基板批量(2個或更多個基板)定位在處理腔室中且隨後在操作208處理。定位在處理腔室中的基板可定位在基板支撐台座上。在一實施例中，在操作208處理基板包括形成基板中的複數個特徵。在操作208的處理期間，處理腔室的溫度可從約200℃至約600℃或更高，及處理腔室的壓力可從1巴至約250巴。
在操作208的處理之後，在操作210將基板從處理腔室移除。在一實施例中，在操作210的基板移除之後，在操作212移除在操作204形成的保護膜。使用含氟電漿或其他合適清洗劑，可在操作212執行膜的移除。處理腔室的噴頭可用於分配這些成分。在操作212的移除膜的期間，在使用清洗劑之後可以用惰性氣體淨化處理腔室。保護膜防範處理腔室的內部免於腐蝕，在諸如操作208的彼等的處理操作期間從效能觀點上，此腐蝕不能只使得處理腔室的部件的整體劣化。然而，保護膜也會造成在基板處理期間的汙染風險，例如，若膜的部分剝落或者落下至基板上。在操作204形成的膜可因此形成並在操作208的各基板或基板批量處理之後被移除。使用本文所論述的系統與方法，不同組成與厚度的保護膜可形成在相同腔室部件上。在一實施例中，在操作212移除膜之前，在操作208-210，多於一個基板或基板批量可被處理並移除。
由處理腔室內部塗佈諸如本文論述的處理腔室之裝置或設備的原位塗佈在本文用於提供均勻厚度的保護塗佈。在一些實例中，本文論述的保護塗佈可形成在用於1巴或更高的高壓應用之處理腔室的內部部件上。不同於非原位塗佈，非原位塗佈對於腐蝕高壓應用會剝落或者從塗佈部件脫落。此保護塗佈的劣化會導致頻繁再塗佈操作。
儘管前述關於本揭示的實施例，但在不背離本發明的基本範疇的情況下可構思出本揭示的其他與進一步實施例，及本揭示的範疇由之後的申請專利範圍所確定。
100:處理腔室
102:外腔室主體
104:內腔室主體
106A:直徑
106B:未塗佈區
106C:支撐表面
106:基板支撐台座
108A:腔室頂部
108:腔室蓋
110:噴頭
112:遠端電漿源
114:冷凝器
116:蒸汽產生器
118:氣體面板
120:保護膜
122:腔室壁
124:底部
126:島
128A:加熱元件
128:電源
130:控制器
132:空間
134:處理空間
136:節流閥
138:真空泵
140:RF電源
142:RF偏壓功率
144:空間
146:基板
200:方法
202、204、206、208、210、212:操作
圖1為根據本發明的某些實施例之示例基板處理腔室的剖面視圖。
圖2為根據本發明的某些實施例之在處理腔室中保護膜的原位形成的方法。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
100:處理腔室
102:外腔室主體
104:內腔室主體
106A:直徑
106B:未塗佈區
106C:支撐表面
106:基板支撐台座
108A:腔室頂部
108:腔室蓋
110:噴頭
112:遠端電漿源
114:冷凝器
116:蒸汽產生器
118:氣體面板
120:保護膜
122:腔室壁
124:底部
126:島
128A:加熱元件
128:電源
130:控制器
132:空間
134:處理空間
136:節流閥
138:真空泵
140:RF電源
142:RF偏壓功率
144:空間
146:基板

Claims (20)

  1. 一種處理一基板的方法，包含：導入至少一種氣體至一處理腔室；從該處理腔室的複數個內部部件移除一第一保護膜，以回應在該處理腔室中該至少一種氣體的該導入；在該處理腔室中經由ALD或CVD在該複數個內部部件上形成一第二保護膜，該複數個內部部件包含一腔室側壁、一腔室底部、一基板支撐台座、一噴頭、及一腔室頂部；及在形成該第二保護膜之後，將一基板定位在該基板支撐台座上，其中該基板接觸該基板支撐台座的一部分，該部分不包含該第二保護膜。
  2. 如請求項1所述之方法，進一步包含：在該第二保護膜的該形成之前，加熱該處理腔室至一預加熱溫度，該預加熱溫度為約300℃至約600℃，其中當該腔室在該預加熱溫度時，發生該第二保護膜的該形成。
  3. 如請求項1所述之方法，進一步包含：在該第二保護膜的該形成之前，加壓該腔室至一壓力，該壓力為約1托至約600托。
  4. 如請求項1所述之方法，進一步包含：在該基板支撐台座上定位該基板之前，設定該腔室的一處 理溫度，該處理溫度為約200℃至約600℃。
  5. 如請求項4所述之方法，進一步包含：在定位該基板之後，在該處理腔室中執行至少一個操作；隨後，從該處理腔室移除該基板；及清洗該腔室，其中清洗該腔室的步驟從該腔室的該複數個內部部件移除該第二保護膜。
  6. 如請求項5所述之方法，進一步包含：使用一含氟電漿從該處理腔室的該複數個內部部件移除該第二保護膜。
  7. 如請求項5所述之方法，其中該第二保護膜包含非晶Si、碳矽烷、多晶矽、SiC、SiN、SiO2、Al2O3、AlON、HfO2、或Ni3Al。
  8. 一種保護一處理腔室的方法，包含：導入至少一種氣體至一處理腔室；從該處理腔室的複數個內部部件移除一第一保護膜，以回應該處理腔室中該至少一種氣體的該導入；在該處理腔室中經由ALD或CVD在該複數個內部部件上形成一第二保護膜，其中該第二保護膜包含非晶Si、碳矽烷、多晶矽、SiC、SiN、SiO2、Al2O3、AlON、HfO2、或Ni3Al；及在形成該第二保護膜之後，將一基板定位在一基板 支撐台座上。
  9. 如請求項8所述之方法，進一步包含：形成該第二保護膜至一厚度，該厚度為80nm至250nm。
  10. 如請求項8所述之方法，其中該第一保護膜包含一第一材料而該第二保護膜包含一第二材料，其中該第一材料不同於該第二材料。
  11. 如請求項8所述之方法，其中該第一保護膜包含一第一材料而該第二保護膜包含一第二材料，其中該第一材料與該第二材料是相同的。
  12. 如請求項8所述之方法，其中該處理腔室的該複數個內部部件包含不鏽鋼。
  13. 如請求項8所述之方法，進一步包含：在形成該第二保護膜之前，在該基板支撐台座的至少一部分上定位一覆蓋，使得該第二保護膜不形成在該基板支撐台座上。
  14. 如請求項8所述之方法，其中該至少一種氣體包含氟。
  15. 如請求項8所述之方法，進一步包含：在形成該第二保護膜之前，加熱該處理腔室至一預加熱溫度，該預加熱溫度為約300℃至約600℃，其中當該腔室在該預加熱溫度時，發生形成該第二保護 膜。
  16. 一種處理一基板的方法，包含：導入至少一種氣體至一處理腔室；從該處理腔室的複數個內部部件移除一第一保護膜，以回應在該處理腔室中該至少一種氣體的該導入；在該處理腔室中經由ALD或CVD在該複數個內部部件上形成一第二保護膜，該複數個內部部件包含一腔室側壁、一腔室底部、一基板支撐台座、一噴頭、及一腔室頂部，其中該第二保護膜包含非晶Si、碳矽烷、多晶矽、SiC、SiN、SiO2、Al2O3、AlON、HfO2、或Ni3Al；及在形成該第二保護膜之後，將一基板定位在該基板支撐台座上，其中該第二保護膜不形成在該基板支撐台座的一部分上，且該基板接觸該基板支撐台座的該部分，該部分不包含該第二保護膜。
  17. 如請求項16所述之方法，進一步包含：在形成該第二保護膜之前，加熱該處理腔室至一預加熱溫度，該預加熱溫度為約300℃至約600℃，其中當該腔室在該預加熱溫度時，發生形成該第二保護膜。
  18. 如請求項16所述之方法，進一步包含：在形成該第二保護膜之前，將該腔室加壓為約1托至約 600托。
  19. 如請求項16所述之方法，進一步包含：在該基板支撐台座上定位該基板之前，設定該腔室的一處理溫度，該處理溫度為約200℃至約600℃。
  20. 如請求項16所述之方法，進一步包含：在該基板支撐台座上定位該基板之前，該腔室的一壓力可為1巴至約250巴。
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