TWI811678B - PTC circuit protection device - Google Patents
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Abstract
一種PTC電路保護裝置包含一PTC聚合物層、一電連接於該PTC聚合物層的第一導電層、一電連接於該PTC聚合物層的第二導電層、一設置於該第一導電層及該第二導電層上的絕緣層單元、一形成在該絕緣層單元上且電連接於該第一導電層的第一電極、及一形成在該絕緣層單元上且電連接於該第二導電層的第二電極,其中該第一電極形成有一第一凹槽。本發明PTC電路保護裝置對於PCB的接合強度優異。A PTC circuit protection device includes a PTC polymer layer, a first conductive layer electrically connected to the PTC polymer layer, a second conductive layer electrically connected to the PTC polymer layer, and a first conductive layer disposed on the first conductive layer and an insulating layer unit on the second conductive layer, a first electrode formed on the insulating layer unit and electrically connected to the first conductive layer, and a first electrode formed on the insulating layer unit and electrically connected to the second conductive layer. The second electrode of the conductive layer, wherein the first electrode forms a first groove. The PTC circuit protection device of the present invention has excellent bonding strength to PCB.
Description
本發明是有關於一種正溫度係數(PTC)電路保護裝置,特別是指一種形成有凹槽的PTC電路保護裝置。The present invention relates to a positive temperature coefficient (PTC) circuit protection device, and in particular to a PTC circuit protection device formed with grooves.
正溫度係數(positive temperature coefficient, PTC)元件具有PTC效應,使其可用作為一電路保護裝置(例如可復式保險絲)。該PTC元件包括一PTC聚合物單元,及形成在該PTC聚合物單元兩相反表面上的一第一電極及一第二電極。該PTC聚合物單元包括一含有一晶體區域及一非晶體區域的聚合物基材,及一顆粒狀導電填料。該顆粒狀導電填料分散於該聚合物基材之非晶體區域,並形成一用於電連接該第一電極及該第二電極之間的連續導電路徑。該PTC效應指的是一種現象,該現象是當該晶體區域的聚合物基材溫度被升高至其熔點時,該晶體區域中的結晶開始熔化,從而產生一新的非晶體區域。當該新的非晶體區域增加至一合併至該原非晶體區域的程度時,該顆粒狀導電填料的導電路徑會轉變為非連續且該PTC聚合物單元的電阻會急劇增加,造成該第一電極及該第二電極之間電不導通。A positive temperature coefficient (PTC) element has the PTC effect, allowing it to be used as a circuit protection device (such as a resettable fuse). The PTC element includes a PTC polymer unit, and a first electrode and a second electrode formed on two opposite surfaces of the PTC polymer unit. The PTC polymer unit includes a polymer substrate containing a crystalline region and an amorphous region, and a granular conductive filler. The particulate conductive filler is dispersed in the amorphous region of the polymer substrate and forms a continuous conductive path for electrically connecting the first electrode and the second electrode. The PTC effect refers to a phenomenon in which when the temperature of the polymer substrate in the crystalline region is raised to its melting point, the crystals in the crystalline region begin to melt, thereby creating a new amorphous region. When the new amorphous region increases to the extent that it merges into the original amorphous region, the conductive path of the granular conductive filler will become discontinuous and the resistance of the PTC polymer unit will increase sharply, causing the first There is no electrical conduction between the electrode and the second electrode.
參閱圖1,一種現有的表面安裝(surface-mounted) PTC電路保護裝置1包含一PTC單元14、一第一絕緣層15、一第二絕緣層16、一第一電極17及一第二電極18。該PTC單元14包括一第一導電構件12、一第二導電構件13及一層疊在該第一導電構件12與該第二導電構件13之間的聚合物層11。該聚合物層11展現出PTC特性並包括一聚合物基材及一分散在該聚合物基材中的顆粒狀導電填料。該第一絕緣層15設置於該第一導電構件12上,而該第二絕緣層16設置於該第二導電構件13上。該第一電極17與該第一導電構件12電連接且設置於該第一絕緣層15上,並進一步朝該第二絕緣層16延伸。同樣地,該第二電極18與該第二導電構件13電連接且設置於該第二絕緣層16上,並進一步朝該第一絕緣層15延伸。Referring to Figure 1, an existing surface-mounted PTC
上述現有的表面安裝PTC電路保護裝置1通常藉由焊料安裝在一電子設備(例如印刷電路板(圖未示))。然而,表面安裝PTC電路保護裝置1與電子設備之間的可焊性(solderability)不盡理想。The above-mentioned existing surface-mounted PTC
因此,本發明之目的,即在提供一種PTC電路保護裝置,可以克服上述先前技術的至少一個缺點。Therefore, the object of the present invention is to provide a PTC circuit protection device that can overcome at least one of the above-mentioned shortcomings of the prior art.
於是,本發明PTC電路保護裝置包含一PTC聚合物層、一第一導電層、一第二導電層、一絕緣層單元、一第一電極及一第二電極。該第一導電層電連接地設置於該PTC聚合物層上。該第二導電層電連接地設置於該PTC聚合物層上且與該第一導電層間隔設置。該絕緣層單元設置於該第一導電層及該第二導電層上。該第一電極形成在該絕緣層單元上,電連接於該第一導電層且與該第二導電層間隔設置。該第二電極形成在該絕緣層單元上,電連接於該第二導電層且與該第一導電層及該第一電極間隔設置。其中,該第一電極形成有一第一凹槽,該第一凹槽從該第一電極的一表面朝該PTC聚合物層凹陷。Therefore, the PTC circuit protection device of the present invention includes a PTC polymer layer, a first conductive layer, a second conductive layer, an insulating layer unit, a first electrode and a second electrode. The first conductive layer is electrically connected to the PTC polymer layer. The second conductive layer is electrically connected to the PTC polymer layer and is spaced apart from the first conductive layer. The insulating layer unit is disposed on the first conductive layer and the second conductive layer. The first electrode is formed on the insulating layer unit, electrically connected to the first conductive layer and spaced apart from the second conductive layer. The second electrode is formed on the insulating layer unit, is electrically connected to the second conductive layer, and is spaced apart from the first conductive layer and the first electrode. Wherein, the first electrode is formed with a first groove, and the first groove is recessed from a surface of the first electrode toward the PTC polymer layer.
本發明之功效在於:該PTC電路保護裝置對於PCB的接合強度優異。The effect of the present invention is that the PTC circuit protection device has excellent bonding strength to PCB.
在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are designated with the same numbering.
此外,在本發明說明書及申請專利範圍中所使用的方向性用語(例如:上、下)單純是意圖幫助描述本發明元件之間的相對位置,而不是意圖限制本發明實際執行時每一元件的實際位置。In addition, the directional terms (such as: up, down) used in the specification and patent application scope of the present invention are simply intended to help describe the relative positions between the components of the present invention, and are not intended to limit each component in the actual implementation of the present invention. actual location.
參閱圖2,本發明PTC電路保護裝置2的第一實施例包含一PTC單元21、一絕緣層單元23、一第一電極24及一第二電極25。該PTC單元21包括一PTC聚合物層210、一第一導電層211及一第二導電層212。該第一導電層211電連接地設置於該PTC聚合物層210上。該第二導電層212電連接地設置於該PTC聚合物層210上且與該第一導電層211間隔設置。該絕緣層單元23設置於該第一導電層211及該第二導電層212上。該第一電極24形成在該絕緣層單元23上,電連接於該第一導電層211且與該第二導電層212間隔設置。該第二電極25形成在該絕緣層單元23上,電連接於該第二導電層212且與該第一導電層211及該第一電極24間隔設置。該第一電極24形成有一第一凹槽244,該第一凹槽244從該第一電極24的一表面朝該PTC聚合物層210凹陷。在本發明的部分具體實施例中,該第二電極25形成有一第二凹槽254,該第二凹槽254從該第二電極25的一表面朝該PTC聚合物層210凹陷。Referring to FIG. 2 , the first embodiment of the PTC
該第一電極24具有一定義出該第一凹槽244的第一凹槽定義壁245,該第二電極25具有一定義出該第二凹槽254的第二凹槽定義壁255。在本發明的部分具體實施例中,該第一凹槽定義壁245的表面積不小於該第一電極24的表面積的10%。在本發明的部分具體實施例中,該第二凹槽定義壁255的表面積不小於該第二電極25的表面積的10%。應注意的是,上述該第一電極24及該第二電極25的表面積是分別指該第一電極24及該第二電極25不接觸於該PTC單元21、該絕緣層單元23且不含分別延伸以與該第一導電層211及該第二導電層212電連接的部分的表面積。The
在本發明的部分具體實施例中,該第一凹槽定義壁245及該第二凹槽定義壁255的表面積分別為該第一電極24及該第二電極25的表面積的10%至80%。In some embodiments of the present invention, the surface areas of the first
在本發明的部分具體實施例中,該第一凹槽定義壁245及該第二凹槽定義壁255的表面積分別為該第一電極24及該第二電極25的表面積的25%至75%。In some embodiments of the present invention, the surface areas of the first
在本發明的部分具體實施例中,該PTC聚合物層210包括一上表面,一相反於該上表面的下表面,及一互連於該上表面與該下表面的圍繞面。在本實施例中,該第一導電層211設置於該上表面上,該第二導電層212設置於該下表面上。該絕緣層單元23包括一設置於該第一導電層211上的第一絕緣層231及一設置於該第二導電層212上的第二絕緣層232。該第一電極24包括一設置於該第一絕緣層231上的上第一電極部241,一設置於該第二絕緣層232上的下第一電極部242,及一形成在該PTC聚合物層210的圍繞面上的第一電極連接部243。該第一電極連接部243互連於該上第一電極部241與該下第一電極部242。該第二電極25包括一設置於該第一絕緣層231上的上第二電極部251,一設置於該第二絕緣層232上的下第二電極部252,及一形成在該PTC聚合物層210的圍繞面上的第二電極連接部253。該第二電極連接部253互連於該上第二電極部251與該下第二電極部252。In some embodiments of the present invention, the
在本發明的部分具體實施例中,該第一電極24的第一凹槽244形成在該上第一電極部241及該下第一電極部242中其中一者上。在本發明的部分具體實施例中,該第一電極24具有兩個第一凹槽244,該等第一凹槽244分別形成在該上第一電極部241及該下第一電極部242上。In some embodiments of the present invention, the
在本發明的部分具體實施例中,該第二電極25的第二凹槽254形成在該上第二電極部251及該下第二電極部252中其中一者上。在本發明的部分具體實施例中,該第二電極25具有兩個第二凹槽254,該等第二凹槽254分別形成在該上第二電極部251及該下第二電極部252上。In some embodiments of the present invention, the
參閱圖3及圖4,本發明PTC電路保護裝置2的第二實施例與該第一實施例類似,差異如下所述。Referring to Figures 3 and 4, the second embodiment of the PTC
參閱圖3及圖4,該PTC聚合物層210包括一上表面,一相反於該上表面的下表面,及一互連於該上表面與該下表面的圍繞面。在本實施例中,該第一導電層211包括一設置於該上表面上的上第一導電部2111及一設置於該下表面上的下第一導電部2112。該第二導電層212包括一設置於該上表面上的上第二導電部2121及一設置於該下表面上的下第二導電部2122。該絕緣層單元23包括一設置於該第一導電層211上的第一絕緣層231及一設置於該第二導電層212上的第二絕緣層232。該第一絕緣層231包括一設置於該上第一導電部2111上的上第一絕緣部2311及一設置於該下第一導電部2112上的下第一絕緣部2312。該第二絕緣層232包括一設置於該上第二導電部2121上的上第二絕緣部2321及一設置於該下第二導電部2122上的下第二絕緣部2322。該第一電極24包括一設置於該上第一絕緣部2311上的上第一電極部241,一設置於該下第一絕緣部2312上的下第一電極部242,及一形成在該PTC聚合物層210的圍繞面上的第一電極連接部243。該第一電極連接部243互連於該上第一電極部241與該下第一電極部242。該第二電極25包括一設置於該上第二絕緣部2321上的上第二電極部251,一設置於該下第二絕緣部2322上的下第二電極部252,及一形成在該PTC聚合物層210的圍繞面上的第二電極連接部253。該第二電極連接部253互連於該上第二電極部251與該下第二電極部252。Referring to FIGS. 3 and 4 , the
在本發明的部分具體實施例中,該第一電極24的第一凹槽244形成在該上第一電極部241及該下第一電極部242中其中一者上。在本發明的部分具體實施例中,該第一電極24形成有兩個第一凹槽244,該等第一凹槽244分別形成在該上第一電極部241及該下第一電極部242上。In some embodiments of the present invention, the
在本發明的部分具體實施例中,該第二電極25的第二凹槽254形成在該上第二電極部251及該下第二電極部252中其中一者上。在本發明的部分具體實施例中,該第一電極24形成有兩個第二凹槽254,該等第二凹槽254分別形成在該上第二電極部251及該下第二電極部252上。In some embodiments of the present invention, the
在本發明的部分具體實施例中,該上第一電極部241具有一定義出該第一凹槽244的第一凹槽定義壁245,該上第二電極部251具有一定義出該第二凹槽254的第二凹槽定義壁255,該第一凹槽定義壁245及該第二凹槽定義壁255的表面積不小於該上第一電極部241及該上第二電極部251的上表面積的10%。In some embodiments of the present invention, the upper
在本發明的部分具體實施例中,該第一凹槽定義壁245及該第二凹槽定義壁255的表面積為該上第一電極部241及該上第二電極部251的上表面積的10%至80%,或25%至75%。In some embodiments of the present invention, the surface area of the first
在本發明的部分具體實施例中,該第一凹槽定義壁245的表面積不小於該上第一電極部241的上表面積的10%,或為該上第一電極部241的上表面積的10%至80%,或25%至75%。在本發明的部分具體實施例中,該第二凹槽定義壁255的表面積不小於該上第二電極部251的上表面積的10%,或為該上第二電極部251的上表面積的10%至80%,或25%至75%。在本發明的部分具體實施例中,一絕緣間隙物28設置於該上第一導電部2111與該上第二導電部2121之間。該絕緣間隙物28也可設置於該下第一導電部2112與該下第二導電部2122之間。In some embodiments of the present invention, the surface area of the first
在本發明的部分具體實施例中,該PTC電路保護裝置2還包含一第三導電層26及一第四導電層27。該第三導電層26包括一設置於該上第一絕緣部2311與該上第一電極部241之間的上第三導電部261及一設置於該下第一絕緣部2312與該下第一電極部242之間的下第三導電部262。該第四導電層27包括一設置於該上第二絕緣部2321與該上第二電極部251之間的上第四導電部271及一設置於該下第二絕緣部2322與該下第二電極部252之間的下第四導電部272。In some embodiments of the present invention, the PTC
在本發明的某些具體實施例中,每一第一導電層211及每一第二導電層212可由一金屬材料所製成,例如金屬箔片、鍍金屬箔片(如鍍鎳銅箔)等。In some embodiments of the present invention, each first
在本發明的部分具體實施例中,該絕緣層單元23是由環氧樹脂所製成。In some embodiments of the present invention, the insulating
在本發明中,該PTC聚合物層210包括一聚合物基材及一分散在該聚合物基材中的顆粒狀導電填料。該聚合物基材可由一聚合物組成物所製得,該聚合物組成物含有一非接枝的烯烴系聚合物(例如高密度聚乙烯(HDPE))。在本發明的部分具體實施例中,該聚合物組成物還包括一經接枝的烯烴系聚合物。在本發明的部分具體實施例中,該經接枝的烯烴系聚合物包括一經羧酸酐接枝的烯烴系聚合物。該經羧酸酐接枝的烯烴系聚合物可為經羧酸酐接枝的高密度聚乙烯。在本實施例中,該經羧酸酐接枝的烯烴系聚合物為經馬來酸酐接枝的HDPE。In the present invention, the
在本發明中,該顆粒狀導電填料可由碳黑、金屬、導電陶瓷材料或其組合所製得。在本發明的部分具體實施例中,該顆粒狀導電填料是選自於碳黑粉末、金屬粉末、導電陶瓷粉末或其組合。In the present invention, the granular conductive filler can be made of carbon black, metal, conductive ceramic materials or combinations thereof. In some embodiments of the present invention, the granular conductive filler is selected from carbon black powder, metal powder, conductive ceramic powder or combinations thereof.
該顆粒狀導電填料的例子包括碳化鈦、碳化鋯、碳化釩、碳化鈮、碳化鉭、碳化鉻、碳化鉬、碳化鎢、氮化鈦、氮化鋯、氮化釩、氮化鈮、氮化鉭、氮化鉻、二矽化鈦、二矽化鋯、二矽化鈮、二矽化鎢、金、銀、銅、鋁、鎳、鎳金屬化玻璃珠、鎳金屬化石墨、Ti-Ta固溶體、W-Ti-Ta-Cr固溶體、W-Ta固溶體、W-Ti-Ta-Nb固溶體、W-Ti-Ta固溶體、W-Ti固溶體、Ta-Nb固溶體或其組合。Examples of the particulate conductive filler include titanium carbide, zirconium carbide, vanadium carbide, niobium carbide, tantalum carbide, chromium carbide, molybdenum carbide, tungsten carbide, titanium nitride, zirconium nitride, vanadium nitride, niobium nitride, nitride Tantalum, chromium nitride, titanium disilicide, zirconium disilicide, niobium disilicide, tungsten disilicide, gold, silver, copper, aluminum, nickel, nickel metallized glass beads, nickel metallized graphite, Ti-Ta solid solution, W-Ti-Ta-Cr solid solution, W-Ta solid solution, W-Ti-Ta-Nb solid solution, W-Ti-Ta solid solution, W-Ti solid solution, Ta-Nb solid solution entity or combination thereof.
在本發明的某些具體實施例中,該聚合物基材可占該PTC聚合物層210的5 wt%至50 wt%,該顆粒狀導電填料可占該PTC聚合物層210的50 wt%至95 wt%。In some embodiments of the present invention, the polymer substrate may account for 5 wt% to 50 wt% of the
製造該PTC電路保護裝置2的方法包含以下步驟:(a) 提供一PTC聚合物層210;(b) 在該PTC聚合物層210上電連接地形成一第一導電層211;(c) 在該PTC聚合物層210上電連接地形成一第二導電層212且與該第一導電層211間隔設置;(d) 在該第一導電層211及該第二導電層212上形成一絕緣層單元23;(e) 熱壓該PTC聚合物層210、該第一導電層211、該第二導電層212及該絕緣層單元23以形成一疊層;(f) 在該疊層上形成一電連接於該第一導電層211的第一電極24;(g) 在該疊層上形成一電連接於該第二導電層212且與該第一電極24間隔的第二電極25;(h) 在該第一電極24上形成一第一凹槽244,該第一凹槽244從該第一電極24的一表面朝該PTC聚合物層210凹陷。在本發明的某些具體實施例中,該方法還包含步驟(i) 在該第二電極25上形成一第二凹槽254,該第二凹槽254從該第二電極25的一表面朝該PTC聚合物層210凹陷。The method of manufacturing the PTC
本發明將就以下實施例來作進一步說明,但應瞭解的是,該等實施例僅為例示說明之用,而不應被解釋為本發明實施之限制。The present invention will be further described with reference to the following examples, but it should be understood that these examples are only for illustration and should not be construed as limitations on the implementation of the present invention.
實施例Example
<實施例1 (E1)<Example 1 (E1) >>
首先,10.5 g HDPE(購自台灣塑膠工業股份有限公司,產品型號:HDPE9002)作為非接枝的烯烴系聚合物,10.5 g經馬來酸酐接枝的HDPE (購自杜邦公司,產品型號:MB100D)作為經羧酸酐接枝的烯烴系聚合物,29 g碳黑粉末(購自Columbian Chemicals公司,產品型號:Raven 430UB)作為顆粒狀導電填料。First, 10.5 g HDPE (purchased from Taiwan Plastics Industry Co., Ltd., product model: HDPE9002) was used as a non-grafted olefin polymer, and 10.5 g of HDPE grafted with maleic anhydride (purchased from DuPont, product model: MB100D ) as an olefin polymer grafted with carboxylic anhydride, and 29 g of carbon black powder (purchased from Columbian Chemicals Company, product model: Raven 430UB) as a granular conductive filler.
將上述配料在一混煉機(廠牌:Brabender)中混合,以溫度為200℃、攪拌轉速為50 rpm的條件混合配料10 min,以得到一配料混合物。Mix the above ingredients in a mixer (brand: Brabender), mix the ingredients at a temperature of 200°C and a stirring speed of 50 rpm for 10 minutes to obtain an ingredient mixture.
將上述混煉得到的配料混合物置於模具中,以熱壓溫度為200℃及熱壓壓力為80 kg/cm 2的條件進行熱壓4 min,以形成多個PTC聚合物胚粒。將胚粒從模具中取出,並使其夾置在上下兩片鍍鎳銅箔中,並在200℃及80 kg/cm 2下進行熱壓4 min,隨後用Co-60 γ射線以總輻射劑量15 Mrad照射,再分別蝕刻上下兩片鍍鎳銅箔以形成互相間隔的上第一導電部、上第二導電部及互相間隔的下第一導電部、下第二導電部,以得到一厚度為0.32 mm的PTC單元。如圖3及圖4所示,該上第一導電部及該下第一導電部共同作為該第一導電層,該上第二導電部及該下第二導電部共同作為該第二導電層。 The above-mentioned ingredient mixture was placed in a mold and hot-pressed for 4 minutes at a hot-pressing temperature of 200°C and a hot-pressing pressure of 80 kg/cm 2 to form multiple PTC polymer embryos. The embryos were taken out of the mold, sandwiched between two upper and lower pieces of nickel-plated copper foil, and hot-pressed at 200°C and 80 kg/ cm for 4 min, and then irradiated with Co-60 γ-rays using total radiation. Irradiate with a dose of 15 Mrad, and then etch the upper and lower nickel-plated copper foils respectively to form an upper first conductive part and an upper second conductive part that are spaced apart from each other, and a lower first conductive part and a lower second conductive part that are spaced apart from each other to obtain a PTC unit with a thickness of 0.32 mm. As shown in FIGS. 3 and 4 , the upper first conductive part and the lower first conductive part jointly serve as the first conductive layer, and the upper second conductive part and the lower second conductive part jointly serve as the second conductive layer. .
接著,在該第一導電層、該第二導電層及該PTC聚合物層曝露的兩相反表面上設置環氧樹脂層,再進行熱壓以形成該第一絕緣層、該第二絕緣層及設置於該第一導電層與該第二導電層之間的絕緣間隙物(如圖3及圖4所示)。Next, an epoxy resin layer is provided on the two exposed opposite surfaces of the first conductive layer, the second conductive layer and the PTC polymer layer, and then hot pressed to form the first insulating layer, the second insulating layer and the PTC polymer layer. An insulating spacer is provided between the first conductive layer and the second conductive layer (as shown in Figures 3 and 4).
將第三導電層及第四導電層分別設置於該第一絕緣層及該第二絕緣層上以得到一層合體。該第三導電層及該第四導電層的形成方式與上述該第一導電層及該第二導電層的形成方式類似。在該第三導電層及該第四導電層上分別鍍上第一電極及該第二電極,且鍍在該層合體的側表面以分別延伸連接該第三導電層及該第四導電層的上下兩部分。該第一電極包括一上第一電極部、一下第一電極部及一第一電極連接部。該第二電極包括一上第二電極部、一下第二電極部及一第二電極連接部。以一數控雕刻機(購自上海易雕公司,型號:YD3040G)在該上第一電極部及該上第二電極部上分別形成一第一凹槽及一第二凹槽。該第一凹槽及該第二凹槽分別由第一凹槽定義壁及第二凹槽定義壁所定義。在實施例1中,該第一凹槽定義壁的表面積為該上第一電極部的上表面積的10%,該第二凹槽定義壁的表面積為該上第二電極部的上表面積的10%。最後得到E1的PTC電路保護裝置。A third conductive layer and a fourth conductive layer are respectively disposed on the first insulating layer and the second insulating layer to obtain a laminate. The formation method of the third conductive layer and the fourth conductive layer is similar to the formation method of the above-mentioned first conductive layer and the second conductive layer. A first electrode and a second electrode are respectively plated on the third conductive layer and the fourth conductive layer, and are plated on the side surface of the laminate to extend and connect the third conductive layer and the fourth conductive layer respectively. Upper and lower parts. The first electrode includes an upper first electrode part, a lower first electrode part and a first electrode connecting part. The second electrode includes an upper second electrode part, a lower second electrode part and a second electrode connecting part. A CNC engraving machine (purchased from Shanghai Yidiao Company, model: YD3040G) was used to form a first groove and a second groove respectively on the upper first electrode part and the upper second electrode part. The first groove and the second groove are respectively defined by a first groove defining wall and a second groove defining wall. In
<實施例2<Example 2 至7 (E2-E7)to 7 (E2-E7) >>
E2-E7的PTC電路保護裝置的製程條件與E1相似,差異之處在於該第一凹槽定義壁及該第二凹槽定義壁的表面積基於該上第一電極部及該上第二電極部的上表面積的占比(如表1所示)。The process conditions of the PTC circuit protection devices of E2-E7 are similar to those of E1. The difference is that the surface areas of the first groove defining wall and the second groove defining wall are based on the upper first electrode part and the upper second electrode part. The proportion of the upper surface area (as shown in Table 1).
<比較例1 (CE1)<Comparative Example 1 (CE1) >>
CE1的PTC電路保護裝置的製程條件與E1相似,差異之處在於沒有凹槽形成在該第一電極及該第二電極上(如表1所示)。
【表1】
性能測試Performance testing
[[ 可焊性測試Solderability test ]]
在E1-E7及CE1的PTC電路保護裝置的上第一電極部及上第二電極部的上表面分別塗上錫基焊料。隨後,藉由所述錫基焊料分別將E1-E7及CE1的PTC電路保護裝置貼附於一印刷電路板(PCB),以分別得到E1-E7及CE1的測試樣品。接著,將每個測試樣品置於一回焊爐(reflow oven)中以進行回焊(reflow soldering)。回焊爐的峰值溫度設定為285℃,以控制回流區間為在260℃的液相溫度以上持續20秒,整體回焊時間為4 min。接著,測試每個測試樣品的可焊性(以「覆蓋焊料的面積占該上第一電極部及該上第二電極部的上表面積的90%以上」作為焊接成功的標準),並計算焊接成功的測試樣品比率,結果如表2所示。
【表2】
表2結果顯示,相較於CE1的PTC電路保護裝置(不具有凹槽),E1-E7的PTC電路保護裝置(特別是E1-E5的凹槽定義壁的表面積的占比為10%至80%)對於PCB具有良好的可焊性。特別是,當測試樣品的PTC電路保護裝置的凹槽定義壁的表面積的占比為25%至75% (E2-E4),焊接成功的比率高達100%。The results in Table 2 show that compared to the PTC circuit protection device of CE1 (without grooves), the PTC circuit protection devices of E1-E7 (especially the grooves of E1-E5) account for 10% to 80% of the surface area of the defined wall. %) has good solderability for PCB. In particular, when the surface area of the test sample's groove-defined wall of the PTC circuit protection device accounted for 25% to 75% (E2-E4), the welding success rate was as high as 100%.
綜上所述,本發明PTC電路保護裝置2藉由在其電極上形成所述凹槽,甚至進一步控制所述凹槽定義壁的表面積的占比,PTC電路保護裝置2對於PCB的接合強度優異,故確實能達成本發明之目的。In summary, the PTC
惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the above are only examples of the present invention, and should not be used to limit the scope of the present invention. All simple equivalent changes and modifications made based on the patent scope of the present invention and the content of the patent specification are still within the scope of the present invention. Within the scope covered by the patent of this invention.
1:PTC電路保護裝置 11:聚合物層 12:第一導電構件 13:第二導電構件 14:PTC單元 15:第一絕緣層 16:第二絕緣層 17:第一電極 18:第二電極 2:PTC電路保護裝置 21:PTC單元 210:PTC聚合物層 211:第一導電層 2111:上第一導電部 2112:下第一導電部 2121:上第二導電部 2122:下第二導電部 212:第二導電層 23:絕緣層單元 231:第一絕緣層 2311:上第一絕緣部 2312:下第一絕緣部 232:第二絕緣層 2321:上第二絕緣部 2322:下第二絕緣部 24:第一電極 241:上第一電極部 242:下第一電極部 243:第一電極連接部 244:第一凹槽 245:第一凹槽定義壁 25:第二電極 251:上第二電極部 252:下第二電極部 253:第二電極連接部 254:第二凹槽 255:第二凹槽定義壁 26:第三導電層 261:上第三導電部 262:下第三導電部 27:第四導電層 271:上第四導電部 272:下第四導電部 28:絕緣間隙物 1:PTC circuit protection device 11:Polymer layer 12: First conductive member 13: Second conductive member 14:PTC unit 15: First insulation layer 16: Second insulation layer 17: First electrode 18:Second electrode 2:PTC circuit protection device 21:PTC unit 210:PTC polymer layer 211: First conductive layer 2111: Go to the first conductive department 2112: Lower first conductive part 2121: Upper second conductive part 2122: Lower second conductive part 212: Second conductive layer 23:Insulation layer unit 231: First insulation layer 2311: Go to the first insulation department 2312: Lower first insulation department 232: Second insulation layer 2321: Upper second insulation part 2322:Lower second insulation part 24: First electrode 241: Upper first electrode part 242: Lower first electrode part 243: First electrode connection part 244: first groove 245: The first groove defines the wall 25:Second electrode 251: Upper second electrode part 252: Lower second electrode part 253: Second electrode connection part 254: Second groove 255: The second groove defines the wall 26:Third conductive layer 261: Go to the third conductive part 262: Lower third conductive part 27:Fourth conductive layer 271: Upper fourth conductive part 272: Lower fourth conductive part 28: Insulation gap
本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: [圖1]是現有的PTC電路保護裝置的剖視示意圖; [圖2]是本發明PTC電路保護裝置的第一實施例的剖視示意圖; [圖3]是本發明PTC電路保護裝置的第二實施例的剖視示意圖;及 [圖4]是該第二實施例的立體示意圖。 Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: [Figure 1] is a schematic cross-sectional view of an existing PTC circuit protection device; [Figure 2] is a schematic cross-sectional view of the first embodiment of the PTC circuit protection device of the present invention; [Figure 3] is a schematic cross-sectional view of the second embodiment of the PTC circuit protection device of the present invention; and [Fig. 4] is a schematic perspective view of the second embodiment.
2:PTC電路保護裝置 2:PTC circuit protection device
21:PTC單元 21:PTC unit
210:PTC聚合物層 210:PTC polymer layer
211:第一導電層 211: First conductive layer
2111:上第一導電部 2111: Go to the first conductive department
2112:下第一導電部 2112: Lower first conductive part
2121:上第二導電部 2121: Upper second conductive part
2122:下第二導電部 2122: Lower second conductive part
212:第二導電層 212: Second conductive layer
23:絕緣層單元 23:Insulation layer unit
231:第一絕緣層 231: First insulation layer
2311:上第一絕緣部 2311: Go to the first insulation department
2312:下第一絕緣部 2312: Lower first insulation department
232:第二絕緣層 232: Second insulation layer
2321:上第二絕緣部 2321: Upper second insulation part
2322:下第二絕緣部 2322:Lower second insulation part
24:第一電極 24: First electrode
241:上第一電極部 241: Upper first electrode part
242:下第一電極部 242: Lower first electrode part
243:第一電極連接部 243: First electrode connection part
244:第一凹槽 244: first groove
245:第一凹槽定義壁 245: The first groove defines the wall
25:第二電極 25:Second electrode
251:上第二電極部 251: Upper second electrode part
252:下第二電極部 252: Lower second electrode part
253:第二電極連接部 253: Second electrode connection part
254:第二凹槽 254: Second groove
255:第二凹槽定義壁 255: The second groove defines the wall
26:第三導電層 26:Third conductive layer
261:上第三導電部 261: Go to the third conductive part
262:下第三導電部 262: Lower third conductive part
27:第四導電層 27:Fourth conductive layer
271:上第四導電部 271: Upper fourth conductive part
272:下第四導電部 272: Lower fourth conductive part
28:絕緣間隙物 28: Insulation gap
Claims (17)
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