TWI788210B - Substrate processing equipment - Google Patents
Substrate processing equipment Download PDFInfo
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- TWI788210B TWI788210B TW111103491A TW111103491A TWI788210B TW I788210 B TWI788210 B TW I788210B TW 111103491 A TW111103491 A TW 111103491A TW 111103491 A TW111103491 A TW 111103491A TW I788210 B TWI788210 B TW I788210B
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- substrate
- width direction
- processing apparatus
- rollers
- fluid supply
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- 239000000758 substrate Substances 0.000 title claims abstract description 217
- 238000012545 processing Methods 0.000 title claims abstract description 113
- 239000012530 fluid Substances 0.000 claims abstract description 49
- 239000007788 liquid Substances 0.000 claims description 69
- 238000003825 pressing Methods 0.000 claims description 35
- 238000012546 transfer Methods 0.000 claims description 9
- 230000032258 transport Effects 0.000 description 31
- 238000004140 cleaning Methods 0.000 description 20
- 239000007789 gas Substances 0.000 description 18
- 238000007664 blowing Methods 0.000 description 13
- 238000000926 separation method Methods 0.000 description 13
- 238000001035 drying Methods 0.000 description 10
- 230000007261 regionalization Effects 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
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- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
- B05C11/1002—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves
- B05C11/1015—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves responsive to a conditions of ambient medium or target, e.g. humidity, temperature ; responsive to position or movement of the coating head relative to the target
- B05C11/1018—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves responsive to a conditions of ambient medium or target, e.g. humidity, temperature ; responsive to position or movement of the coating head relative to the target responsive to distance of target
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
- B05C11/1044—Apparatus or installations for supplying liquid or other fluent material to several applying apparatus or several dispensing outlets, e.g. to several extrusion nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G13/00—Roller-ways
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G39/00—Rollers, e.g. drive rollers, or arrangements thereof incorporated in roller-ways or other types of mechanical conveyors
- B65G39/02—Adaptations of individual rollers and supports therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
- B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
- B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
- B65G49/061—Lifting, gripping, or carrying means, for one or more sheets forming independent means of transport, e.g. suction cups, transport frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G2201/00—Indexing codes relating to handling devices, e.g. conveyors, characterised by the type of product or load being conveyed or handled
- B65G2201/02—Articles
- B65G2201/0214—Articles of special size, shape or weigh
- B65G2201/022—Flat
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Paper (AREA)
Abstract
本發明提供一種可提高基板的品質的基板處理裝置。實施方式是一種基板處理裝置,對具有翹曲的基板進行處理,且所述基板處理裝置包括:多個搬送輥,將在與基板的搬送方向正交的寬度方向上隔開地設置的兩個作為一組,沿著搬送方向設置有多組,支撐凹面側並以軸為中心旋轉,由此搬送基板;第一軸,將在寬度方向上隔開地設置的兩根作為一組,沿著搬送方向設置有多組,安裝有搬送輥;以及流體供給部,向基板的凹面供給流體,流體供給部從在寬度方向上隔開的各組的搬送輥之間向基板的凹面供給流體。The present invention provides a substrate processing device capable of improving the quality of a substrate. An embodiment is a substrate processing apparatus for processing a substrate having warpage, and the substrate processing apparatus includes a plurality of conveyance rollers, two of which are spaced apart in a width direction perpendicular to a conveyance direction of the substrate. As a set, a plurality of sets are provided along the conveyance direction, and the concave side is supported and rotated about the axis to convey the substrate; the first axis is two sets spaced apart in the width direction as a set, along the A plurality of groups are provided in the conveying direction, and conveying rollers are installed; and a fluid supply part supplies fluid to the concave surface of the substrate, and the fluid supply part supplies fluid to the concave surface of the substrate from between the conveying rollers of each set separated in the width direction.
Description
本發明的實施方式是有關於一種基板處理裝置。Embodiments of the present invention relate to a substrate processing apparatus.
在液晶顯示裝置或半導體元件等的製造步驟中,使用的是對玻璃基板或半導體基板等基板進行處理的基板處理裝置。作為基板處理,例如有抗蝕劑塗布處理、抗蝕劑剝離處理、蝕刻處理、清洗處理、乾燥處理。基板處理裝置一邊通過多個搬送輥來搬送基板,一邊對於所述基板,通過供給工具來供給例如處理液或乾燥用的氣體之類的處理用的流體而對基板進行處理。 [現有技術文獻] [專利文獻] A substrate processing apparatus for processing substrates such as glass substrates and semiconductor substrates is used in manufacturing steps of liquid crystal display devices, semiconductor elements, and the like. As substrate processing, there are, for example, resist coating processing, resist stripping processing, etching processing, cleaning processing, and drying processing. A substrate processing apparatus processes a substrate by supplying a processing fluid such as a processing liquid or a drying gas from a supply tool to the substrate while conveying the substrate by a plurality of conveying rollers. [Prior art literature] [Patent Document]
[專利文獻1]日本專利特開平11-10096號公報[Patent Document 1] Japanese Patent Laid-Open No. 11-10096
[發明所要解決的問題] 作為搬送對象的基板通常為平板狀的基板,但其中也有具有翹曲的基板。例如,當使用厚度薄至1 mm左右的基板來作為處理對象基板,在所述基板的其中一個面進行成膜時,基板會因膜的應力而翹曲。因此,有時基板的其中一個面為凹面而另一面為凸面。若如上所述那樣具有翹曲的基板將凹面朝上地,由多個搬送輥以保持著翹曲的狀態予以搬送,則來自供給工具的處理用的流體會滯留於凹面的中央部,從而對基板的處理會變得不充分或者不均勻。因此,例如有時會發生塗布不均、剝離不均、蝕刻不均、清洗不均、乾燥不均等的處理不均,從而基板的品質將下降。 [Problem to be Solved by the Invention] The substrate to be conveyed is usually a flat substrate, but there are also substrates with warpage. For example, when a substrate as thin as about 1 mm is used as a substrate to be processed and a film is formed on one surface of the substrate, the substrate may warp due to the stress of the film. Therefore, one of the surfaces of the substrate may be concave and the other surface may be convex. When the warped substrate is transported with the concave surface facing upward by a plurality of transport rollers in a state where the warpage is maintained, the processing fluid from the supply tool will stagnate in the center of the concave surface, thereby affecting the substrate. Substrate processing can become inadequate or uneven. Therefore, for example, processing unevenness such as uneven coating, uneven peeling, uneven etching, uneven cleaning, and uneven drying may occur, thereby deteriorating the quality of the substrate.
本發明所要解決的問題在於,提供一種可提高基板的品質的基板處理裝置。 [解決問題的技術手段] The problem to be solved by the present invention is to provide a substrate processing apparatus capable of improving the quality of a substrate. [Technical means to solve the problem]
本發明的實施方式是一種基板處理裝置,處理具有翹曲的基板,且所述基板處理裝置包括:搬送輥,將在與所述基板的搬送方向正交的寬度方向上隔開地設置的兩個作為一組,沿著所述基板的搬送方向設置有多組,支撐所述基板的凹面側來搬送所述基板;第一軸,將在所述寬度方向上隔開地設置的兩根作為一組,沿著所述基板的搬送方向設置有多組,安裝有所述搬送輥;以及流體供給部,向所述基板的凹面供給流體,所述流體供給部從在所述寬度方向上隔開的所述搬送輥之間向所述基板的凹面供給流體。 [發明的效果] An embodiment of the present invention is a substrate processing apparatus for processing a substrate having a warp, and the substrate processing apparatus includes: a conveying roller that separates two rollers that are spaced apart in a width direction perpendicular to the conveying direction of the substrate. As a group, a plurality of groups are provided along the conveying direction of the substrate, and the concave surface side of the substrate is supported to convey the substrate; the first shaft is two arranged at intervals in the width direction as One set, a plurality of sets are provided along the conveying direction of the substrate, and the conveying rollers are installed; and a fluid supply part supplies fluid to the concave surface of the substrate, and the fluid supply part is spaced apart from the substrate in the width direction. A fluid is supplied between the open conveying rollers to the concave surface of the substrate. [Effect of the invention]
根據本發明的實施方式,可提高基板的品質。According to the embodiments of the present invention, the quality of the substrate can be improved.
參照圖1~圖4對實施方式的基板處理裝置10進行說明。此外,附圖的尺寸以及形狀並非反映實際的基板及裝置的準確的尺寸及形狀,為了容易理解,存在誇張地表達的部分。另外,在以下的說明中,將順從重力的方向設為「下方」,將抵抗重力的方向設為「上方」,但這些方向並不限定裝置的設置方向。A
[基板] 如圖1以及圖2所示,在本實施方式中,作為搬送對象、處理對象的基板W具有翹曲。作為基板W,例如使用玻璃基板等矩形形狀的薄型基板。在本實施方式中,基板W的厚度為0.5 mm~1.1 mm左右,基板W的翹曲量為7 mm~10 mm左右。在圖中,示出了基板W的短邊方向沿著U字形的形狀,但實際的矩形形狀的基板W的翹曲處於基板W的四周。因翹曲而基板W的其中一個面收縮,另一個面伸展。將因收縮而凹陷的面設為凹面S1,將因伸展而隆起的面設為凸面S2。本實施方式的基板W是將凹面S1作為處理面。例如,使用如多層基板那樣在處理面形成有電路的圖案P的基板W。此外,在基板W的處理面的外緣附近,存在未形成有圖案P的區域。將處理面的形成有圖案P的區域設為「圖案形成區域」,將位於圖案形成區域的外周的未形成有圖案P的區域設為「非圖案形成區域」。 [substrate] As shown in FIGS. 1 and 2 , in the present embodiment, the substrate W to be conveyed or processed has warpage. As the substrate W, for example, a rectangular thin substrate such as a glass substrate is used. In this embodiment, the thickness of the substrate W is about 0.5 mm to 1.1 mm, and the amount of warping of the substrate W is about 7 mm to 10 mm. In the figure, the short side direction of the board|substrate W is shown as a U-shape, but the warping of the board|substrate W of an actual rectangular shape exists in the periphery of the board|substrate W. Due to the warping, one surface of the substrate W shrinks and the other surface expands. Let the surface dented by contraction be the concave surface S1, and the surface raised by stretching be the convex surface S2. The substrate W of the present embodiment has the concave surface S1 as the processing surface. For example, a substrate W in which a circuit pattern P is formed on a processing surface such as a multilayer substrate is used. In addition, near the outer edge of the processed surface of the substrate W, there is a region where the pattern P is not formed. The area where the pattern P is formed on the treated surface is referred to as a "pattern formation area", and the area on the outer periphery of the pattern formation area where the pattern P is not formed is referred to as a "non-pattern formation area".
[基本結構]
本實施方式的基板處理裝置10是一邊支撐凹面S1側來搬送基板W,一邊對作為處理面的凹面S1進行處理的裝置。當如上所述那樣以凹面S1為下方、凸面S2為上方的方式進行搬送時,基本上,只要僅通過基板W的端部的支撐,便能夠穩定地搬送。而且,基板處理裝置10對下方的凹面S1進行處理。所述基板處理裝置10具有:處理室21、基板搬送裝置30、流體供給部40、控制部50。處理室21為在內部具有對基板W進行搬送的搬送路徑T的框體,且形成為基板W能夠沿著搬送路徑T而通過內部。處理室21作為用於對在搬送路徑T上移動的基板W進行處理的場所發揮功能。基板W的處理在本實施方式中為清洗與乾燥。在處理室21的底面,形成有排出處理液的排出口(未圖示)。
[basic structure]
The
基板搬送裝置30具有多個搬送輥31以及多個按壓輥32。基板搬送裝置30是遍及處理室21的整個內部而設置,利用各按壓輥32來按壓基板W的凸面S2,並且利用各搬送輥31來支撐凹面S1側而搬送基板W。The
[基板搬送裝置]
(搬送輥與按壓輥的配置)
基板搬送裝置30如上所述那樣將凹面S1設為下方來搬送基板W。各搬送輥31是沿著基板W的搬送方向Td而以規定間隔排列於搬送路徑T的下方。各按壓輥32以隔著搬送路徑T而隔開地與各搬送輥31的組分別相向的方式定位於搬送路徑T的上方,且以與各搬送輥31的規定間隔相同的規定間隔沿著搬送方向Td排列。這些搬送輥31及按壓輥32在處理室21內,以在圖1中的上下方向上相向的方式配置,分別設置成能夠旋轉,且構成為通過驅動機構(未圖示)而相互同步地旋轉。搬送輥31在圖1中順時針旋轉,按壓輥32逆時針旋轉。
[Board transfer device]
(Arrangement of conveying rollers and pressing rollers)
The
在處理室21內,將以隔著搬送路徑T而隔開地相向的方式配置的搬送輥31(在本實施方式中兩個為一組)與按壓輥32作為一組,設置有多組,處理室21內的每組的搬送輥31與按壓輥32之間的隔開距離H成為一定。在本實施方式中,隔開距離H是與搬送路徑垂直的方向、例如鉛直方向上的隔開距離。所謂隔開距離H成為一定,例如是指成為基板W的翹曲量以下的能夠搬送基板的規定距離。所謂翹曲量,是指載置有基板W的平面與載置在所述平面的基板W的上表面的最大鉛直隔開距離。In the
(搬送輥的具體結構)
如圖2所示,搬送輥31支撐基板W的凹面S1側,以在水平面內與基板W的搬送方向Td正交的軸心a為旋轉軸進行旋轉,由此搬送基板W。搬送輥31具有位於同一軸心a上的圓柱部31a與凸緣狀部31b。圓柱部31a與基板W的凹面S1側的端部相接來支撐基板W。圓柱部31a例如是將橡膠或樹脂作為原材料的輥。圓柱部31a的軸為與搬送方向Td正交的寬度方向X。包括所述圓柱部31a的搬送輥31將在寬度方向X上隔開地設置的兩個作為一組,沿著搬送方向Td配置有多組。各組的兩個圓柱部31a為相同直徑。
(Specific structure of the transfer roller)
As shown in FIG. 2 , the
此外,所述搬送輥31與按壓輥32的隔開距離H是與基板W相接的部分的距離,在本實施方式中,是圓柱部31a的外周面與按壓輥32的外周面的距離。即,搬送輥31與按壓輥32的隔開距離H包含為搬送輥31的一部分與按壓輥32的距離的情況。另外,本實施方式的搬送路徑T位於搬送輥31的圓柱部31a與按壓輥32之間。The separation distance H between the
凸緣狀部31b是在兩個搬送輥31中的圓柱部31a的相反的端部以直徑變大的方式設置的部分。凸緣狀部31b能夠抵接於基板W的沿著搬送方向Td的端部。The flange-
此外,如圖3所示,每組的搬送輥31彼此的隔開距離D(各組的圓柱部31a彼此的相向面間的距離)設為一定。若將具有翹曲的基板W的俯視下的寬度方向X上的長度設為L,則所述隔開距離D優選為設為D≦L。另外,若將各組的搬送輥31的凸緣狀部31b的隔開距離(相向面間的距離)設為d,則優選為設為d≧L。由此,能夠利用搬送輥31支撐基板W的端部。進而,如圖2所示,若將基板W的俯視下的圖案形成區域的寬度方向X上的長度設為Lp,則優選為設為D>Lp。由此,可抑制由後述的流體供給部40供給的流體向圖案P的供給被搬送輥31阻擋。此外,圓柱部31a的軸向上的長度ax為(d-D)/2。In addition, as shown in FIG. 3 , the separation distance D between the conveying
進而,在搬送輥31,與其同軸地設置有第一軸31c。第一軸31c將在寬度方向X上隔開地設置的兩根作為一組,沿著搬送方向Td設置有多組,安裝有搬送輥31。即,在各組的兩個搬送輥31,在寬度方向X上隔開且相互同軸地分別設置有兩根第一軸31c。第一軸31c的直徑比圓柱部31a細,且設置於各組的兩個圓柱部31a的相互相反的端面。多個第一軸31c例如通過未圖示的具有螺旋齒輪(斜齒輪)的驅動機構而能夠同步旋轉地設置。各組的兩個搬送輥31均以相同的圓周速度受到旋轉驅動。Furthermore, the
當第一軸31c旋轉時,安裝於所述第一軸31c的各圓柱部31a將第一軸31c作為旋轉的軸而旋轉。搬送輥31對凹面S1側的非圖案形成區域或者基板W的沿著搬送方向Td的端部進行支撐而沿搬送方向Td予以搬送。如圖2所示,在所搬送的基板W中的寬度方向X的圖案形成區域的下部,成為無第一軸31c的狀態。When the
(按壓輥的具體結構)
按壓輥32是將寬度方向X設為軸的圓形。如圖2所示,按壓輥32以在各搬送輥31的上方且抵接於基板W的凸面S2的中央的方式,在各搬送輥31的上方且與位於成組的兩個搬送輥31之間的空間中的寬度方向X的中央相向地設置。在按壓輥32,同軸地設置有第二軸32a。第二軸32a與第一軸31c平行地配置。第二軸32a的直徑比按壓輥32細,且遍及超過基板W的寬度方向X上的長度的長度,而在處理室21內,例如通過未圖示的具有直齒輪(正齒輪)的驅動機構能夠同步旋轉地設置。
(The specific structure of the pressing roller)
The
當第二軸32a旋轉時,安裝於所述第二軸32a的按壓輥32一邊與凸面S2相接,一邊將第二軸32a作為旋轉軸而旋轉。搬送輥31與按壓輥32均被控制成以相同的圓周速度受到旋轉驅動。When the
[流體供給部]
如圖1及圖2所示,在處理室21設置有流體供給部40。流體供給部40對於基板W,從在寬度方向X上隔開的各組的搬送輥31之間向基板W的凹面S1供給流體。流體供給部40具有液體噴射部41以及氣體吹出部42。
[Fluid Supply Unit]
As shown in FIGS. 1 and 2 , a
(液體噴射部)
液體噴射部41對在搬送路徑T上移動的基板W的處理面噴射並供給處理液。液體噴射部41設置成與所搬送的基板W隔著搬送路徑T而隔開地與基板W相向,以便不妨礙基板搬送裝置30對基板W的搬送。此外,在液體噴射部41與搬送路徑T之間不介隔存在有軸或輥等。當通過液體噴射部41向搬送路徑T噴射處理液時,處理液被供給至在搬送路徑T上移動的基板W的凹面S1。對於處理液,針對每個目標處理而適用清洗液、剝離液、顯影液、淋洗液(純水等)。
(Liquid Ejection Department)
The
更具體而言,作為液體噴射部41,例如可使用具有多個貫穿孔的噴淋管(shower pipe)或包括多個噴嘴的管。如圖1及圖2所示,本實施方式的液體噴射部41具有在沿著搬送方向Td的方向上延伸的多個管411,通過多個管411在寬度方向X上排列地配置來構成。在本實施方式中,如圖2所示,在靠近在寬度方向X上隔開地設置的兩個搬送輥31的位置上分別各配置一個管411A、管411C,在兩個搬送輥31之間的寬度方向X的中央配置一個管411B。以下,在不區別管411A、管411B、管411C的情況下,作為管411進行說明。在管411連接有包括未圖示的泵及罐的處理液的供給源。More specifically, as the
在管411,在寬度方向X上設置有多個噴出部412。在本實施方式中,噴出部412是從噴出口向所搬送的基板W的處理面呈噴淋狀供給處理液的噴嘴。即,噴出部412從基板W的下方對基板W的下表面噴出處理液。噴出部412也可為貫通孔。將設置於各管411A、管411B、管411C的噴出部412設為412A、412B、412C,在不對它們進行區別的情況下,作為噴出部412進行說明。In the
沿著寬度方向X配置的多個噴出部412設定為:與位於靠近各組的兩個搬送輥31的一側、即位於寬度方向X的兩端側的噴出部412相比,位於遠離各組的兩個搬送輥31的一側、即位於寬度方向X的中央側的噴出部412的處理液的每單位時間的噴出量(以下,有時簡稱為「噴出量」)更多。在本實施方式中,與噴出部412A、噴出部412C的噴出量相比,噴出部412B的噴出量更多。為了設為此種噴出量,沿著寬度方向X配置的多個噴出部412各別地可變地設置要噴出的處理液的每單位時間的流量。更具體而言,控制部50通過控制與管411連接的配管上所設置的閥(未圖示)來調整在各管411中流動的處理液的量。The plurality of
(氣體吹出部)
氣體吹出部42對在搬送路徑T上移動的基板W,例如吹出並供給空氣或氮氣之類的乾燥用的氣體。氣體吹出部42設置成與所搬送的基板W隔著搬送路徑T而隔開地與基板W相向,以便不妨礙基板搬送裝置30對基板W的搬送。此外,在氣體吹出部42與搬送路徑T之間,不介隔存在有軸或輥等。氣體吹出部42向通過搬送路徑T的基板W高壓地吹出氣體,將附著於基板W的清洗液等處理液吹走而使基板W的處理面乾燥。
(gas blowing part)
The
例如,如圖1及圖2所示,氣體吹出部42是具有比具有翹曲的基板W的寬度長的狹縫狀的吹出口42a的氣刀(air knife)。氣體吹出部42設置成從吹出口42a向搬送方向Td的上游側吹出氣體,將附著於基板W的液體吹走。For example, as shown in FIGS. 1 and 2 , the
[控制部]
如圖1所示,控制部50是對基板搬送裝置30、流體供給部40等基板處理裝置10的各部進行控制的電腦,具有存儲與基板搬送及基板處理相關的各種資訊及程序等的存儲部、以及執行各種程序的處理器。如上所述,本實施方式的控制部50通過對閥進行控制來調整在管411中流動的處理液的量,與靠近各組的兩個搬送輥31的端部側、即寬度方向X的兩端側相比,遠離各組的兩個搬送輥31的中央側、即寬度方向X的中央及其附近的噴出量更多。
[control department]
As shown in FIG. 1 , the
[動作]
接著,對基板處理裝置10的動作進行說明。此外,以下的動作是利用清洗液對基板W進行清洗並予以乾燥的動作的一例。如上所述,基板處理裝置10中,基板搬送裝置30的各搬送輥31及各按壓輥32同步地旋轉,基板W在凹面S1側的端部支撐於各搬送輥31上的狀態下,沿搬送方向Td受到搬送而沿著搬送路徑T移動,通過處理室21。
[action]
Next, the operation of the
在處理室21中,處於由各管411的噴出部412從搬送路徑T的下方預先供給清洗液的液體供給狀態。當具有翹曲的基板W受到搬送而通過所述處於液體供給狀態的區域時,基板W的凹面S1被供給清洗液而受到清洗。在基板W的凹面S1側,為無第一軸31c的狀態,供給至基板W的凹面S1的清洗液不會被第一軸31c阻擋,而碰觸圖案形成區域。供給至基板W的清洗液向基板W的端部流動而從端部落下,並流經處理室21的底面而從排出口排出。The
此外,凹面S1以從中央向兩端下降的方式傾斜。因此,從靠近基板W的端部的噴出部412A、噴出部412C供給的清洗液不會到達中央,而是從端部落下。另一方面,在本實施方式中,通過從噴出部412B向基板W的凹面S1的中央供給清洗液,形成從中央向端部沖走污染物的流動。由此,可將存在於基板W的處理面的污染物去除。In addition, the concave surface S1 is inclined so as to descend from the center to both ends. Therefore, the cleaning liquid supplied from the
但是,由於基板W具有翹曲,因此在凹面S1的中央相較於端部而距噴出部412的距離長時,在噴出部412的配置高度位置一定的情況下,若將中央的噴出部412B的流量設為與兩端的噴出部412A、噴出部412C的流量相同,則有時無法向凹面S1的中央供給充分的流量的清洗液。於是,清洗液在到達凹面S1的端部之前滯留或落下,從而會導致由污染物的滯留引起的再次附著。在本實施方式中,使中央的噴出部412B的流量比靠近端部的噴出部412A、噴出部412C多,因此向凹面S1的中央供給充分的流量的清洗液,而可形成從中央向端部的流動,從而可將污染物去除。However, since the substrate W has warpage, when the distance between the center of the concave surface S1 and the
在處理室21中,通過氣體吹出部42從搬送路徑T的下方預先供給乾燥用的氣體。當基板W通過所述處於氣體供給狀態的區域時,附著於基板W的凹面S1的清洗液通過氣體的吹附被吹走,基板W變得乾燥。從基板W吹走的清洗液流經處理室21的底面而從排出口排出。In the
[實施方式的效果]
(1)本實施方式是一種基板處理裝置10,對具有翹曲的基板W進行處理,且所述基板處理裝置10包括:多個搬送輥31,將在與基板W的搬送方向Td正交的寬度方向X上隔開地設置的兩個作為一組,沿著搬送方向Td設置有多組,支撐凹面S1側並以軸為中心旋轉,由此搬送基板W;第一軸31c,將在寬度方向X上隔開地設置的兩根作為一組,沿著搬送方向Td設置有多組,安裝有搬送輥31;以及流體供給部40,向基板W的凹面S1供給流體。
[Effect of Embodiment]
(1) The present embodiment is a
而且,流體供給部40從在寬度方向X上隔開的各組的搬送輥31之間向基板W的凹面S1供給流體。Further, the
假設在以下方為凸面S2的方式搬送基板W的情況下,會支撐凸面S2側的傾斜面,從而容易滑動而支撐不穩定,需要在下側追加支撐基板W的構件或機構等。另一方面,在本實施方式中,通過支撐凹面S1側,基本上僅支撐基板W的端部即可,因此可穩定地搬送。If the substrate W is transported with the convex surface S2 below, the inclined surface on the convex surface S2 side will be supported, and the support will be unstable due to easy sliding. Therefore, it is necessary to add a member or mechanism to support the substrate W on the lower side. On the other hand, in this embodiment, by supporting the concave surface S1 side, basically only the end portion of the substrate W needs to be supported, and thus stable conveyance is possible.
另外,假設遍及基板W的寬度方向X的整體而設置有軸,則從流體供給部40供給的流體會碰觸軸,或者產生到達不了基板W的部分,從而無法均勻地供給至基板W,妨礙基板W的有效率的處理。但是,本實施方式中,在凹面S1側,搬送輥31及第一軸31c在寬度方向X上隔開地設置,因此可防止從流體供給部40供給的流體被搬送輥31或第一軸31c阻擋。因此,可將流體均勻地噴到處理面,因此能夠實現均勻的處理,從而可抑制基板W的品質的下降。In addition, if the shaft is provided over the entire width direction X of the substrate W, the fluid supplied from the
進而,通過從各組的搬送輥31與第一軸31c之間向基板W的凹面S1供給流體,由於凹面S1的傾斜而形成從中央向端部的流動,因此可抑制凹面S1的處理變得不充分,從而可提高基板W的品質。Furthermore, by supplying the fluid to the concave surface S1 of the substrate W from between the conveying
(2)本實施方式包括按壓基板W的凸面S2的按壓輥32、以及與按壓輥32同軸地設置的第二軸32a。因此,即便從凹面S1側施加因處理液的供給而產生的壓力,也可通過按壓輥32防止浮起,因此基板W的位置穩定,從而可維持均勻的處理。(2) This embodiment includes the
(3)流體供給部40在寬度方向X上具有多個噴出部412,與配置於靠近各組的兩個搬送輥31的一側的噴出部412相比,配置於寬度方向X上的中央側的噴出部412的處理液的噴出量更多。因此,來自位於較凹面S1的端部側更靠中央側處的噴出部的處理液的噴出量更多,容易形成從中央向端部的流動,從而可使整體的處理均勻。例如,如圖2所示,在多個噴出部412設置於相同高度的情況下,中央的噴出部412B的噴出口由於與基板W的隔開距離比其他的噴出部412A、噴出部412C長,因此所噴出的處理液按噴出部412A、噴出部412B、噴出部412C分散,或處理液與基板W的凹面S1的中央碰撞的壓力變弱。在本實施方式中,通過使設置於凹面S1的中央的下方的噴出部412B的噴出量比其他噴出部412A、噴出部412C多,可確保中央的處理液的流量,而形成從中央向端部的流動。另外,也能夠使處理液與凹面S1碰撞的壓力均勻。(3) The
(4)流體供給部40在寬度方向X上具有多個噴出部412,多個噴出部412各別地可變地設置要噴出的處理液的流量。因此,根據由基板W的翹曲引起的凹面S1與各噴出部412的距離的差異,來調整各噴出部412的流量,由此能夠實現均勻的處理。(4) The
(5)流體供給部40具有在沿著搬送方向Td的方向上延伸的多個管411,多個管411在寬度方向X上排列地配置,噴出部412設置於管411。因此,通過調整各管411的處理液的流量,可調整來自沿著寬度方向X配置的多個噴出部412的處理液的噴出量。(5) The
[其他實施方式]
(1)在搬送輥31未必需要設置凸緣狀部31b。例如,如圖4所示,也可在沿基板W的搬送方向Td排列的多個第一軸31c之間設置引導基板W的移動的導輥33。在此情況下,若將一對相向的導輥33的隔開距離設為e,則優選為設為e≧L。
[Other implementations]
(1) It is not necessarily necessary to provide the flange-shaped
(2)在所述形態中,按壓輥32在與搬送方向Td正交的寬度方向X上設為一個,但並不限於此,也可設置有多個。例如,在與各搬送輥31相向的位置,可各設置一個按壓輥32。也可將帶繞掛於按壓輥32,設為如輥式輸送機那樣。通過採用此種結構,與僅使用按壓輥32的情況相比,相對於基板W的翹曲而接觸的面積增加,因此可更穩定地搬送基板W。另外,也可設為扁平型(flat type)的輥。(2) In the above-described form, one pressing
(3)也可設置測定基板W的翹曲量的測定部,根據由測定部測定的基板W的翹曲量,來調整來自噴出部412的噴出量。例如,在由測定部測定的基板W的翹曲量比規定值大的情況下,也可增多來自中央的噴出部412B的噴出量。(3) A measuring unit for measuring the amount of warpage of the substrate W may be provided, and the discharge amount from the
(4)也可設置測定基板W的翹曲量的測定部、使各按壓輥32升降的移動機構,根據由測定部測定的基板W的翹曲量,來調整各組的搬送輥31及按壓輥32的隔開距離。(4) A measuring unit for measuring the warpage of the substrate W and a moving mechanism for raising and lowering each
(5)在所述形態中,例示了在共同的室內進行清洗處理與乾燥處理,但並不限於此。也可在不同的室內進行清洗處理與乾燥處理。(5) In the above-mentioned form, it was exemplified that the cleaning treatment and the drying treatment were performed in a common chamber, but the present invention is not limited thereto. Washing and drying can also be performed in separate chambers.
(6)在所述形態中,多個噴出部412設定為與靠近各組的兩個搬送輥31的一側相比,遠離各組的兩個搬送輥31的一側的處理液的每單位時間的噴出量更多。此時,在各噴出部412的噴出孔的直徑相等的情況下,與靠近各組的兩個搬送輥31的一側相比,遠離各組的兩個搬送輥31的一側的噴出部中的處理液的噴出速度更快即可。(6) In the above form, the plurality of
(7)在所述形態中,管411設為管411A、管411B、管411C此三個,但並不限於三個,也可設置三個以上。此時,也可僅中央側的一個相較於除此以外而噴出量多,也可從靠近搬送輥31的一側向中央階段性地噴出量變多。(7) In the above-described form, three
(8)作為流體供給部40,除了所述的呈噴淋狀地噴出處理液的噴嘴、氣刀以外,也可為水刀(aqua knife)等,而且,只要是噴出流體的工具,則所使用的工具並無特別限定。進而,也可將所述的多種工具組合使用。另外,流體供給部40也可設置於基板W的搬送路徑T的上方,對基板W的凸面S2(未形成有圖案P的非圖案形成面)供給處理用的流體,由此對基板W的兩面進行處理。(8) The
(9)在所述形態中,作為基板處理裝置10的處理,例示了對基板W進行清洗、乾燥的處理,但處理並不限於此。為了製造液晶基板或半導體基板、光罩等,例如也可使用抗蝕劑處理裝置、曝光處理裝置、顯影處理裝置、蝕刻處理裝置、剝離處理裝置。與此相應地,作為處理液,可使用各種藥液。(9) In the above-mentioned form, the processing of washing and drying the substrate W was exemplified as the processing of the
(10)在所述形態中,例示了以水平狀態來搬送基板W的情況,但並不限於此,也可使基板W傾斜而以傾斜狀態來搬送,例如也可使基板W的寬度方向X的一端高於另一端而傾斜地搬送基板W。(10) In the above-mentioned form, the case where the substrate W is conveyed in a horizontal state was exemplified, but it is not limited to this, and the substrate W may be inclined to be conveyed in an inclined state. For example, the width direction X of the substrate W may also be The substrate W is transported obliquely with one end higher than the other end.
(11)在所述形態中,以四周存在翹曲的基板W(四周具有翹曲的基板W)為對象進行了說明,但並不限於此,例如即便是在矩形的任意兩邊、三邊存在翹曲的基板,也能夠適用本發明。(11) In the above-mentioned form, the substrate W with warping around the circumference (substrate W with warping around the circumference) has been described as an object, but it is not limited thereto. The present invention can also be applied to warped substrates.
(12)以上,對本發明的若干實施方式進行了說明,但這些實施方式是作為例子而提示,並不意圖限定發明的範圍。這些新穎的實施方式能夠以其他的各種形態來實施,在不脫離發明主旨的範圍內可進行各種省略、替換、變更。這些實施方式或其變形包含在發明的範圍或主旨內,並且包含在發明申請專利範圍所記載的發明及其均等的範圍內。(12) Some embodiments of the present invention have been described above, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in other various forms, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope or spirit of the invention, and are included in the inventions described in the claims for the invention and their equivalents.
10:基板處理裝置
21:處理室
30:基板搬送裝置
31:搬送輥
31a:圓柱部
31b:凸緣狀部
31c:第一軸
32:按壓輥
32a:第二軸
33:導輥
40:流體供給部
41:液體噴射部
42:氣體吹出部
42a:吹出口
50:控制部
411、411A、411B、411C:管
412、412A、412B、412C:噴出部
a:軸心
ax、L、Lp:長度
D、e、H:隔開距離
d:隔開距離(相向面間的距離)
P:圖案
S1:凹面
S2:凸面
T:搬送路徑
Td:搬送方向
W:基板
X:寬度方向
10: Substrate processing device
21: Processing room
30: Substrate transfer device
31: Conveying
圖1是表示實施方式的基板處理裝置的概略結構的側視圖。 圖2是圖1的向視A-A'圖。 圖3是表示圖1的實施方式的基板處理裝置的概略結構的平面圖。 圖4是表示另一實施方式的基板處理裝置的概略結構的平面圖。 FIG. 1 is a side view showing a schematic configuration of a substrate processing apparatus according to an embodiment. Fig. 2 is a view AA' of Fig. 1 . 3 is a plan view showing a schematic configuration of the substrate processing apparatus of the embodiment shown in FIG. 1 . 4 is a plan view showing a schematic configuration of a substrate processing apparatus according to another embodiment.
10:基板處理裝置 10: Substrate processing device
21:處理室 21: Processing room
30:基板搬送裝置 30: Substrate transfer device
31:搬送輥 31: Conveying roller
31a:圓柱部 31a: Cylindrical part
31b:凸緣狀部 31b: Flange-shaped part
31c:第一軸 31c: first axis
32:按壓輥 32: Press roller
32a:第二軸 32a: Second axis
40:流體供給部 40: Fluid supply part
41:液體噴射部 41: Liquid injection department
42:氣體吹出部 42: Gas blowing part
42a:吹出口 42a: outlet
50:控制部 50: Control Department
411:管 411: Tube
412:噴出部 412: ejection part
H:隔開距離 H: distance apart
T:搬送路徑 T: transport path
Td:搬送方向 Td: Transport direction
W:基板 W: Substrate
Claims (10)
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TW201935520A (en) * | 2017-11-13 | 2019-09-01 | 日商荏原製作所股份有限公司 | Apparatus and method for processing a surface of a substrate |
TW201943004A (en) * | 2018-03-27 | 2019-11-01 | 日商荏原製作所股份有限公司 | Cleaning device, plating device including the same, and cleaning method |
CN112309933A (en) * | 2019-07-25 | 2021-02-02 | 芝浦机械电子装置株式会社 | Substrate transfer apparatus and substrate processing apparatus |
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JPH07188949A (en) * | 1993-12-27 | 1995-07-25 | Masamichi Kodama | Surface treatment of substrate and treating device therefor |
JP3405846B2 (en) * | 1995-03-27 | 2003-05-12 | 株式会社カイジョー | Ultrasonic cleaner for substrate and ultrasonic cleaner using the same |
JPH08288250A (en) * | 1995-04-19 | 1996-11-01 | Dainippon Screen Mfg Co Ltd | Liquid drip apparatus |
JPH1110096A (en) | 1997-06-20 | 1999-01-19 | Dainippon Screen Mfg Co Ltd | Substrate treating device |
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JP2001085496A (en) * | 1999-09-10 | 2001-03-30 | Daiichi Shisetsu Kogyo Kk | Carrying device of plate-like member |
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TW201943004A (en) * | 2018-03-27 | 2019-11-01 | 日商荏原製作所股份有限公司 | Cleaning device, plating device including the same, and cleaning method |
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