TW201943004A - Cleaning device, plating device including the same, and cleaning method - Google Patents
Cleaning device, plating device including the same, and cleaning method Download PDFInfo
- Publication number
- TW201943004A TW201943004A TW108109893A TW108109893A TW201943004A TW 201943004 A TW201943004 A TW 201943004A TW 108109893 A TW108109893 A TW 108109893A TW 108109893 A TW108109893 A TW 108109893A TW 201943004 A TW201943004 A TW 201943004A
- Authority
- TW
- Taiwan
- Prior art keywords
- processed
- substrate
- film thickness
- cleaning device
- washing
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 171
- 238000007747 plating Methods 0.000 title claims description 71
- 238000000034 method Methods 0.000 title claims description 35
- 230000007246 mechanism Effects 0.000 claims abstract description 186
- 238000005406 washing Methods 0.000 claims description 50
- 238000005259 measurement Methods 0.000 claims description 46
- 238000003825 pressing Methods 0.000 claims description 27
- 230000007723 transport mechanism Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 abstract description 290
- 238000012545 processing Methods 0.000 abstract description 20
- 239000007789 gas Substances 0.000 description 30
- 238000001035 drying Methods 0.000 description 17
- 239000002245 particle Substances 0.000 description 10
- 239000007921 spray Substances 0.000 description 10
- 238000007664 blowing Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000011068 loading method Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 230000032258 transport Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 230000003749 cleanliness Effects 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000012805 post-processing Methods 0.000 description 4
- 238000007781 pre-processing Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/08—Rinsing
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Automation & Control Theory (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
本發明係關於一種洗淨裝置、具備該洗淨裝置之鍍覆裝置、及洗淨方法。The present invention relates to a cleaning device, a plating device including the same, and a cleaning method.
以往係進行在半導體晶圓或印刷基板等基板表面形成配線及凸塊(突起狀電極)等。形成該配線及凸塊等之方法習知有電解鍍覆法。Conventionally, wiring, bumps (protruded electrodes), and the like are formed on the surface of a substrate such as a semiconductor wafer or a printed circuit board. As a method for forming the wirings and bumps, an electrolytic plating method is known.
用於電解鍍覆法之鍍覆裝置一般而言係對具有300mm直徑之晶圓等圓形基板進行鍍覆處理。但是,近年來不限於此種圓形基板,也要求對方形基板進行鍍覆。In general, a plating apparatus used in the electrolytic plating method performs a plating process on a circular substrate such as a wafer having a diameter of 300 mm. However, in recent years, it is not limited to such a circular substrate, and it is also required to plate a square substrate.
圓形基板及方形基板依產品種類其大小或剛性各不相同。剛性小之方形基板會彎曲。洗淨基板之洗淨裝置藉由搬送輥將基板搬送至洗淨裝置中時,翹曲大之基板與搬送輥的接觸面積小。因而搬送輥會空轉,而無法搬送基板。Round substrates and square substrates differ in size or rigidity depending on the product type. A small rigid square substrate will bend. In a cleaning device for cleaning a substrate, when a substrate is transferred to a cleaning device by a transfer roller, a contact area between the substrate having a large warpage and the transfer roller is small. As a result, the transfer rollers become idle, and the substrate cannot be transferred.
此外,翹曲大之基板,即使可搬送基板,基板仍會干擾到對洗淨裝置中之處理區域的入口之狹縫,而發生無法通過狹縫之問題。此因,為了防止洗淨裝置中之氣體等洩漏到洗淨裝置外部,而使狹縫寬度儘量窄。In addition, even if the substrate is warped, the substrate may interfere with the slit at the entrance of the processing area in the cleaning device even if the substrate can be transported, and the problem that the slit cannot pass through occurs. For this reason, in order to prevent the gas and the like in the cleaning device from leaking to the outside of the cleaning device, the slit width is made as narrow as possible.
再者,洗淨鍍覆過之基板後,測定鍍覆膜之膜厚的洗淨裝置揭示於日本特開2005-240108號公報。圓形基板及方形基板依產品種類其大小或剛性各不相同。而剛性小之方形基板會彎曲。日本特開2005-240108號公報揭示之技術無法因應具有翹曲之基板,因為有翹曲,而發生無法正確測定鍍覆膜之膜厚的問題。Furthermore, a cleaning device for measuring the thickness of a plated film after cleaning the plated substrate is disclosed in Japanese Patent Application Laid-Open No. 2005-240108. Round substrates and square substrates differ in size or rigidity depending on the product type. On the other hand, a square substrate with a small rigidity will bend. The technique disclosed in Japanese Patent Application Laid-Open No. 2005-240108 cannot cope with a substrate having warpage, and because of the warpage, a problem that a film thickness of a plating film cannot be accurately measured occurs.
此外,日本特開2005-240108號公報揭示之技術係在鍍覆後實施抗蝕層之剝離,然後測定鍍覆膜之膜厚。因而,測定結果,因為鍍覆膜之膜厚薄及/或膜厚不均勻而不合格時,需要在基板上再度塗布抗蝕層並再度進行鍍覆,或是廢棄該基板。因而發生成本增加的問題。
[先前技術文獻]
[專利文獻]In addition, the technique disclosed in Japanese Patent Application Laid-Open No. 2005-240108 is to peel the resist layer after plating, and then measure the film thickness of the plating film. Therefore, if the measurement result is unacceptable because the thickness of the plating film is thin and / or the thickness is not uniform, it is necessary to re-apply a resist layer on the substrate and perform plating again, or discard the substrate. Therefore, a problem of increased cost occurs.
[Prior technical literature]
[Patent Literature]
[專利文獻1]日本特開2018-6404號公報
[專利文獻2]日本特開2005-240108號公報[Patent Document 1] Japanese Patent Laid-Open No. 2018-6404
[Patent Document 2] Japanese Patent Laid-Open No. 2005-240108
(發明所欲解決之問題)(Problems to be solved by the invention)
本發明一個形態係為了解決此種問題者,其目的為提供一種即使是翹曲大之基板仍可搬送的洗淨裝置。One aspect of the present invention is to solve such a problem, and an object of the present invention is to provide a cleaning device that can carry even a substrate with a large warpage.
本發明另外形態之目的為提供一種即使是翹曲大的基板,仍可測定鍍覆膜之膜厚的洗淨裝置。Another object of the present invention is to provide a cleaning device capable of measuring the film thickness of a plated film even on a substrate having a large warpage.
此外,本發明另外形態之目的為提供一種不需要剝離抗蝕層而可測定鍍覆膜之膜厚的洗淨裝置。
(解決問題之手段)In addition, an object of another aspect of the present invention is to provide a cleaning device capable of measuring a film thickness of a plating film without removing a resist layer.
(Means for solving problems)
為了解決上述問題,第一種形態採用可洗淨被處理物之洗淨裝置的構成,該洗淨裝置具有:搬送機構,其係可搬送當作洗淨處理對象之前述被處理物;加壓輥,其係設於可隔著前述被處理物而與前述搬送機構相對的位置,並可將前述被處理物施壓於前述搬送機構;及輥移動機構,其係使前述加壓輥朝向前述搬送機構移動,並藉由前述加壓輥可將前述被處理物施壓於前述搬送機構。In order to solve the above problems, the first form adopts a configuration of a cleaning device capable of cleaning the object to be processed. The cleaning device includes a conveying mechanism capable of conveying the object to be processed as the object of the cleaning process; pressurization A roller is provided at a position which can be opposed to the conveyance mechanism through the object to be processed, and can press the object to be processed by the conveyance mechanism; and a roller moving mechanism, which makes the pressure roller face the foregoing The conveyance mechanism moves, and the object to be processed can be pressed to the conveyance mechanism by the pressure roller.
本實施形態係使可隔著被處理物而與搬送機構相對之位置,並可將被處理物施壓於搬送機構之加壓輥,藉由輥移動機構朝向搬送機構移動,並藉由加壓輥將被處理物施壓於搬送機構。因而,即使是翹曲大之基板(被處理物)仍可將基板施壓於搬送輥(搬送機構),搬送輥不致空轉。被加壓輥按壓之基板可藉由搬送輥而向處理區域搬送。In this embodiment, the object can be positioned opposite to the conveying mechanism through the object to be processed, and the object to be processed can be pressed against the pressure roller of the conveying mechanism. The roller presses the object to be processed to the transport mechanism. Therefore, even a substrate with a large warpage (to-be-processed object) can press the substrate to a conveying roller (conveying mechanism), and the conveying roller does not idle. The substrate pressed by the pressure roller can be transferred to the processing area by the transfer roller.
此外,因為基板係藉由加壓輥而施壓於搬送輥,所以翹曲矯正過之基板亦不致干擾到處理區域入口的狹縫。In addition, since the substrate is pressed against the transfer roller by a pressure roller, the warped-corrected substrate does not interfere with the slit at the entrance of the processing area.
第二種形態係採用第一種形態之洗淨裝置的構成,其特徵為:前述加壓輥至少有4個。The second aspect adopts the structure of the cleaning device of the first aspect, which is characterized in that there are at least four pressure rollers.
第三種形態係採用第一種形態或第二種形態之洗淨裝置的構成,其特徵為:具有驅動裝置,其係可旋轉驅動前述加壓輥。The third form adopts the structure of the cleaning apparatus of the first form or the second form, and is characterized by having a driving device that can drive the aforementioned pressure roller in a rotatable manner.
第四種形態係採用鍍覆裝置之構成,該鍍覆裝置具備第一種形態至第三種形態中任何一種形態之洗淨裝置。The fourth aspect is a configuration using a plating device, which is provided with a cleaning device of any one of the first to third aspects.
第五種形態係採用洗淨方法之構成,其係在可洗淨被處理物之洗淨裝置中洗淨前述被處理物的方法,前述洗淨裝置具有:搬送機構,其係可搬送當作洗淨處理對象之前述被處理物;加壓輥,其係設於可隔著前述被處理物而與前述搬送機構相對的位置,並可將前述被處理物施壓於前述搬送機構;及加壓輥移動機構,其係使前述加壓輥朝向前述搬送機構移動,並藉由前述加壓輥可將前述被處理物施壓於前述搬送機構;且前述洗淨方法具有以下工序:在前述搬送機構上搭載前述被處理物;藉由前述輥移動機構使前述加壓輥朝向前述搬送機構移動,並藉由前述加壓輥將前述被處理物施壓於前述搬送機構;及在前述被處理物被施壓於前述搬送機構之狀態下搬送前述被處理物。The fifth form is a structure adopting a washing method, which is a method for washing the to-be-processed object in a washing device capable of washing the to-be-processed object. The aforementioned washing device has a transport mechanism, which is capable of being transported as Washing the object to be processed; the pressure roller is provided at a position opposite to the conveying mechanism through the object to be processed, and can press the object to be processed to the conveying mechanism; and The pressure roller moving mechanism moves the pressure roller toward the conveyance mechanism, and the object to be processed can be pressed to the conveyance mechanism by the pressure roller; and the cleaning method has the following steps: during the conveyance The object to be processed is mounted on the mechanism; the pressure roller is moved toward the conveyance mechanism by the roller moving mechanism, and the object to be processed is pressed against the conveyance mechanism by the pressure roller; and The object to be processed is transported in a state of being pressed under the transport mechanism.
為了解決上述問題,第六種形態係採用可洗淨被處理物之洗淨裝置的構成,該洗淨裝置具有:支撐部,其係可支撐進行過鍍覆處理與洗淨處理之前述被處理物;加壓部,其係設於可隔著前述被處理物而與前述支撐部相對的位置,並可將前述被處理物施壓於前述支撐部;移動機構,其係使前述加壓部朝向前述支撐部移動,並可藉由前述加壓部將前述被處理物施壓於前述支撐部;及膜厚測定部,其係可測定前述被處理物之鍍覆膜的膜厚。In order to solve the above-mentioned problem, the sixth form adopts a configuration of a cleaning device capable of cleaning the object to be processed. The cleaning device includes a support portion that supports the aforementioned processed object that has been subjected to plating treatment and cleaning treatment. A pressurizing portion which is provided at a position which can be opposed to the support portion across the object to be processed and can press the object to be processed by the support portion; a moving mechanism which makes the pressure portion It can move toward the said support part, and can press the said to-be-processed object to the said support part by the said pressure part; and a film thickness measurement part which can measure the film thickness of the plating film of the to-be-processed object.
本實施形態因為加壓部可將被處理物施壓於支撐部,所以可壓住基板之翹曲來測定膜厚。藉此,可正確測定鍍覆膜之膜厚。採用本實施形態時,可提供即使是翹曲大之基板仍可測定鍍覆膜之膜厚的洗淨裝置。In this embodiment, since the object to be processed is pressed by the pressing portion to the supporting portion, the warpage of the substrate can be pressed to measure the film thickness. Thereby, the film thickness of the plating film can be accurately measured. According to this embodiment, it is possible to provide a cleaning device capable of measuring the film thickness of a plating film even on a substrate having a large warpage.
第七種形態係採用第六種形態之洗淨裝置的構成,其特徵為:前述支撐部係可搬送前述被處理物之搬送機構。The seventh aspect adopts the structure of the cleaning device of the sixth aspect, characterized in that the support part is a conveying mechanism capable of conveying the object to be processed.
第八種形態係採用第六種形態或第七種形態之洗淨裝置的構成,其特徵為:前述加壓部具有輥子,前述輥子可將前述被處理物施壓於前述支撐部。The eighth aspect adopts the structure of the cleaning device of the sixth aspect or the seventh aspect, characterized in that the pressurizing part has a roller, and the roller can press the object to be processed onto the support part.
第九種形態係採用第六種形態至第八種形態中任何一種形態之洗淨裝置的構成,其特徵為:前述輥子至少有4個。The ninth aspect adopts the structure of the cleaning device in any one of the sixth aspect to the eighth aspect, and is characterized in that there are at least four rollers.
第十種形態係採用第六種形態至第九種形態中任何一種形態之洗淨裝置的構成,其特徵為:前述膜厚測定部在前述測定時移動,可在前述被處理物之複數部位測定前述被處理物之鍍覆膜的膜厚。The tenth aspect is a configuration of a cleaning device adopting any one of the sixth aspect to the ninth aspect, wherein the film thickness measurement section moves during the measurement and can be located at a plurality of positions of the object to be processed. The film thickness of the plating film of the to-be-processed object was measured.
第十一種形態係採用第六種形態至第十種形態中任何一種形態之洗淨裝置的構成,其特徵為:具有複數個前述膜厚測定部。The eleventh aspect is a configuration of a cleaning device using any one of the sixth aspect to the tenth aspect, and is characterized by having a plurality of the aforementioned film thickness measuring sections.
第十二種形態係採用第六種形態至第十一種形態中任何一種形態之洗淨裝置的構成,其特徵為:前述膜厚測定部具有渦電流感測器。The twelfth aspect is a configuration of a cleaning device adopting any one of the sixth aspect to the eleventh aspect, wherein the film thickness measuring section includes an eddy current sensor.
第十三種形態係採用第六種形態至第十二種形態中任何一種形態之洗淨裝置的構成,其特徵為:前述被處理物具有抗蝕層,前述膜厚測定部可測定具有前述抗蝕層之前述被處理物的的鍍覆膜之膜厚。本實施形態因為係在具有抗蝕層狀態下測定鍍覆膜之膜厚,所以不需要剝離抗蝕層。採用本實施形態時,可提供不需要剝離抗蝕層而可測定鍍覆膜之膜厚的洗淨裝置。The thirteenth aspect is a configuration of a cleaning device adopting any one of the sixth aspect to the twelfth aspect, wherein the object to be processed has a resist layer, and the film thickness measurement unit can measure the presence of the foregoing. The thickness of the plating film of the resist to be processed. In this embodiment, since the film thickness of the plating film is measured in a state having a resist layer, it is not necessary to peel off the resist layer. According to this embodiment, it is possible to provide a cleaning device capable of measuring the film thickness of the plating film without removing the resist layer.
測定結果,因為鍍覆膜之膜厚薄及/或膜厚不均勻而不合格時,無須再度於基板上塗布抗蝕層,而可再度進行鍍覆。此外,無須廢棄不合格之該基板,可再度進行鍍覆。因而成本降低。As a result of the measurement, if the thickness of the plating film is thin and / or the thickness is not uniform, it is not necessary to apply a resist layer on the substrate again, and the plating can be performed again. In addition, it is not necessary to discard the defective substrate, and the plating can be performed again. As a result, costs are reduced.
第十四種形態係採用鍍覆裝置之構成,其具備第六種形態至第十三種形態中任何一種形態之洗淨裝置。The fourteenth aspect adopts a configuration of a plating device, and is provided with a cleaning device of any one of the sixth aspect to the thirteenth aspect.
第十五種形態係採用洗淨方法之構成,其係在可洗淨被處理物之洗淨裝置中洗淨前述被處理物的方法,前述洗淨裝置具有:支撐部,其係可支撐進行過鍍覆處理與洗淨處理之前述被處理物;加壓部,其係設於可隔著前述被處理物而與前述支撐部相對的位置,並可將前述被處理物施壓於前述支撐部;移動機構,其係使前述加壓部朝向前述支撐部移動,並可藉由前述加壓部將前述被處理物施壓於前述支撐部;及膜厚測定部,其係可測定前述被處理物之鍍覆膜的膜厚;且前述洗淨方法具有以下工序:在前述支撐部上搭載前述被處理物;藉由前述移動機構使前述加壓部朝向前述支撐部移動,並藉由前述加壓部將前述被處理物施壓於前述支撐部;及在前述被處理物被施壓於前述支撐部之狀態下,使用前述膜厚測定部測定前述被處理物之鍍覆膜的膜厚。The fifteenth aspect is a structure adopting a washing method, which is a method of washing the to-be-processed object in a washing device capable of washing the to-be-processed object. The said washing device has a support portion which can support the process. The above-mentioned object to be subjected to the plating treatment and the cleaning treatment; the pressurizing portion is provided at a position which can be opposed to the support portion through the object to be processed, and can press the object to be processed to the support A moving mechanism that moves the pressurizing portion toward the support portion and can press the object to be processed by the pressurizing portion to the support portion; and a film thickness measurement portion that measures the object The thickness of the plated film of the processed object; and the cleaning method has the following steps: mounting the processed object on the supporting portion; moving the pressing portion toward the supporting portion by the moving mechanism, and moving the pressing portion by the moving mechanism The pressing part presses the object to be processed onto the support part; and in a state where the object to be processed is pressed onto the support part, the film thickness of the object to be processed is measured using the film thickness measurement part. .
以下,參照圖式說明本發明之實施形態。另外,以下各實施形態中,在同一或相當之構件上註記同一符號,並省略重複之說明。此外,各實施形態所示之特徵只要彼此不矛盾,則亦可適用於其他實施形態。第一圖係具備本實施形態之洗淨裝置的鍍覆裝置之整體配置圖。如第一圖所示,該鍍覆裝置100大致上區分為:在基板固持器上裝載基板(相當於被處理物之一例),或是從基板固持器卸載基板之裝載/卸載部110;處理基板之處理部120;與洗淨部50a。處理部120進一步包含:進行基板之前處理及後處理的前處理‧後處理部120A;及對基板進行鍍覆處理之鍍覆處理部120B。另外,以該鍍覆裝置100處理之基板包含:方形基板、圓形基板。此外,方形基板包含:方形之印刷基板、或其他鍍覆對象物。Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the same reference numerals are given to the same or corresponding components, and redundant descriptions are omitted. In addition, the features shown in each embodiment can be applied to other embodiments as long as they do not contradict each other. The first figure is an overall layout diagram of a plating apparatus provided with the cleaning apparatus of this embodiment. As shown in the first figure, the plating apparatus 100 is roughly divided into: a substrate loading (loading / unloading) 110 on a substrate holder (equivalent to an example of an object to be processed); The processing part 120 of the substrate; and the cleaning part 50a. The processing unit 120 further includes: a pre-processing and post-processing unit 120A that performs pre-processing and post-processing of the substrate; and a plating processing unit 120B that performs plating processing on the substrate. The substrate processed by the plating apparatus 100 includes a square substrate and a circular substrate. In addition, the square substrate includes a square printed substrate or other objects to be plated.
裝載/卸載部110具有:2台匣盒台25、及基板裝卸機構29。匣盒台25搭載收納半導體晶圓或印刷基板等基板的匣盒25a。基板裝卸機構29係以將基板裝卸於無圖示之基板固持器的方式構成。此外,在基板裝卸機構29附近(例如下方)設置用於收容基板固持器之自動倉儲(stocker)30。在此等單元25, 29, 30之中央配置有由在此等單元之間搬送基板的搬送用機器人構成之基板搬送裝置27。基板搬送裝置27係構成可藉由行駛機構28而行駛。The loading / unloading unit 110 includes two cassette stages 25 and a substrate loading / unloading mechanism 29. The cassette stage 25 carries a cassette 25 a that houses a substrate such as a semiconductor wafer or a printed circuit board. The substrate attaching and detaching mechanism 29 is configured to attach and detach substrates to and from a substrate holder (not shown). In addition, an automatic stocker 30 for accommodating a substrate holder is provided near (for example, below) the substrate attaching and detaching mechanism 29. In the center of these units 25, 29, and 30, a substrate transfer device 27 composed of a transfer robot that transfers substrates between these units is arranged. The substrate transfer device 27 is configured to be able to travel by the travel mechanism 28.
洗淨部50a具有洗淨鍍覆處理後之基板並使其乾燥的洗淨裝置50。基板搬送裝置27係以將鍍覆處理後之基板搬送至洗淨裝置50,再從洗淨裝置50取出洗淨後之基板的方式構成。關於洗淨裝置50之詳情與後述之第二圖一起作說明。The cleaning unit 50a includes a cleaning device 50 that cleans and dries the substrate after the plating process. The substrate transfer device 27 is configured to transfer the substrate after the plating process to the cleaning device 50 and then take out the cleaned substrate from the cleaning device 50. Details of the cleaning device 50 will be described together with a second figure described later.
前處理‧後處理部120A具有:預濕槽32、預浸槽33、預沖洗槽34、噴吹槽35、及沖洗槽36。預濕槽32係將基板浸漬於純水中。預浸槽33係蝕刻除去形成於基板表面之種層等的導電層表面之氧化膜。預沖洗槽34係以洗淨液(純水等)將預浸後的基板與基板固持器一起洗淨。噴吹槽35係進行洗淨後之基板的排液。沖洗槽36係以洗淨液將鍍覆後的基板與基板固持器一起洗淨。預濕槽32、預浸槽33、預沖洗槽34、噴吹槽35、沖洗槽36係按照此順序配置。The pre-processing and post-processing unit 120A includes a pre-wet tank 32, a prepreg tank 33, a pre-flush tank 34, a spray tank 35, and a flush tank 36. The pre-wet tank 32 immerses the substrate in pure water. The prepreg groove 33 is formed by etching to remove an oxide film on the surface of a conductive layer such as a seed layer formed on the substrate surface. The pre-rinsing tank 34 cleans the pre-soaked substrate together with the substrate holder with a cleaning solution (pure water, etc.). The spray tank 35 is a substrate drain after the cleaning. The rinsing tank 36 cleans the plated substrate together with the substrate holder with a cleaning solution. The pre-wet tank 32, the pre-soak tank 33, the pre-rinsing tank 34, the blowing tank 35, and the flushing tank 36 are arranged in this order.
鍍覆處理部120B具有複數個鍍覆槽39,此等鍍覆槽39具備溢流槽38。各鍍覆槽39在內部收納一個基板,並使基板浸漬於內部所保持的鍍覆液中,對基板表面進行銅鍍覆等鍍覆。此時,鍍覆液之種類並無特別限制,並依用途而使用各種鍍覆液。The plating treatment section 120B has a plurality of plating tanks 39, and these plating tanks 39 are provided with an overflow tank 38. Each plating tank 39 accommodates one substrate inside, and the substrate is immersed in a plating solution held inside, and the surface of the substrate is plated with copper plating or the like. In this case, the type of the plating solution is not particularly limited, and various plating solutions are used depending on the application.
鍍覆裝置100具有位於此等各設備之側方,並在此等各設備之間將基板固持器與基板一起搬送的例如採用線性馬達方式之基板固持器搬送裝置37。該基板固持器搬送裝置37係以在與基板裝卸機構29、預濕槽32、預浸槽33、預沖洗槽34、噴吹槽35、沖洗槽36、及鍍覆槽39之間搬送基板固持器的方式構成。The plating apparatus 100 includes a substrate holder transfer device 37 using a linear motor method, for example, a linear motor method, which is located at the side of these devices and transfers the substrate holder and the substrate between the devices. The substrate holder transfer device 37 is configured to transfer and hold a substrate between the substrate holding and unloading mechanism 29, the pre-wet tank 32, the prepreg tank 33, the pre-rinsing tank 34, the blowing tank 35, the washing tank 36, and the plating tank 39. Device way.
其次,詳係說明第一圖所示之洗淨裝置50。第二圖係洗淨裝置50之概略側剖面圖。洗淨裝置50具有:基板W1之入口51、第一搬送路徑52、鉛直搬送路徑53、第二搬送路徑54、及基板W1之出口55。如圖示,第一搬送路徑52與第二搬送路徑54在上下方向並列配置,且第一搬送路徑52位於第二搬送路徑之下方。第一搬送路徑52係與入口51連通而搬送從入口51投入之基板W1的路徑。第二搬送路徑54係在與第一搬送路徑52中搬送基板W1之方向相反方向搬送基板W1的路徑。第二搬送路徑54經由鉛直搬送路徑53而與第一搬送路徑相連,而且也與出口連通。鉛直搬送路徑53係以連接第一搬送路徑52與第二搬送路徑之方式在鉛直方向延伸的路徑。Next, the cleaning device 50 shown in the first figure will be described in detail. The second figure is a schematic side sectional view of the cleaning device 50. The cleaning device 50 includes an inlet 51 of the substrate W1, a first conveyance path 52, a vertical conveyance path 53, a second conveyance path 54, and an outlet 55 of the substrate W1. As shown in the figure, the first conveying path 52 and the second conveying path 54 are arranged side by side in the vertical direction, and the first conveying path 52 is located below the second conveying path. The first conveyance path 52 is a path that communicates with the inlet 51 and conveys the substrate W1 loaded from the inlet 51. The second conveyance path 54 is a path that conveys the substrate W1 in a direction opposite to the direction in which the substrate W1 is conveyed in the first conveyance path 52. The second conveyance path 54 is connected to the first conveyance path via a vertical conveyance path 53 and also communicates with the exit. The vertical conveyance path 53 is a path extending in the vertical direction so as to connect the first conveyance path 52 and the second conveyance path.
在入口51設置用於開閉入口51之入口閘門51a。此外,在出口55設置用於開閉出口55之出口閘門55a。將洗淨裝置50如本實施形態地搭載於鍍覆裝置100時,或例如搭載於CMP裝置等時,由於在洗淨裝置50中會有洗淨時產生的微粒子浮游,因此,與鍍覆裝置100或CMP裝置等之環境比較其潔淨度較低。若將洗淨裝置50中維持負壓,即可抑制洗淨裝置50中之微粒子流出洗淨裝置50外部,不過也有可能因為壓力調整裝置故障等而無法在洗淨裝置50中維持負壓。本實施形態由於可以入口閘門51a及出口閘門55a分離洗淨裝置50之內部與外部,因此可進一步抑制洗淨裝置50中之微粒子流出外部。An entrance gate 51 a for opening and closing the entrance 51 is provided at the entrance 51. Further, an exit gate 55 a for opening and closing the exit 55 is provided at the exit 55. When the cleaning device 50 is mounted on the plating device 100 as in this embodiment, or when it is mounted on, for example, a CMP device, the cleaning device 50 floats with particles generated during cleaning, and is therefore similar to the plating device. Environments such as 100 or CMP equipment have lower cleanliness. If the negative pressure is maintained in the cleaning device 50, it is possible to prevent the particles in the cleaning device 50 from flowing out of the cleaning device 50. However, the negative pressure may not be maintained in the cleaning device 50 due to a failure of the pressure adjustment device or the like. In this embodiment, the entrance gate 51a and the exit gate 55a can separate the inside and the outside of the cleaning device 50, so that the particles in the cleaning device 50 can be further suppressed from flowing out.
如圖示,在第一搬送路徑52上設置具有將基板W1朝向鉛直搬送路徑53搬送之複數個輥子等的水平搬送機構56(搬送機構)。水平搬送機構56亦可依基板W1之強度或材質等,僅接觸於基板W1之指定部位的方式配置輥子而構成。例如可以水平搬送機構56之輥子僅接觸於基板W1之寬度方向中央部與兩邊緣部的方式,來配置水平搬送機構56的輥子。並可在第一搬送路徑52之入口51附近設置對於從入口51投入之基板W1進行位置調整的對準機構。藉此,可將從入口51投入之基板W1配置在水平搬送機構56上適當的位置。As shown in the figure, a horizontal conveyance mechanism 56 (conveyance mechanism) having a plurality of rollers or the like for conveying the substrate W1 toward the vertical conveyance path 53 is provided on the first conveyance path 52. The horizontal conveyance mechanism 56 may be configured by arranging rollers so that the substrate W1 contacts only a designated portion of the substrate W1 according to the strength, material, or the like of the substrate W1. For example, the rollers of the horizontal conveyance mechanism 56 may be arranged so that the rollers of the horizontal conveyance mechanism 56 may only contact the central portion and both edge portions in the width direction of the substrate W1. An alignment mechanism for adjusting the position of the substrate W1 inserted from the entrance 51 may be provided near the entrance 51 of the first conveyance path 52. Thereby, the board | substrate W1 put in from the inlet 51 can be arrange | positioned at an appropriate position on the horizontal conveyance mechanism 56.
將基板W1配置於水平搬送機構56上之適當位置時,可將基板W1施壓於水平搬送機構56之加壓輥70朝向水平搬送機構56而往垂直方向下方移動,並將基板W1施壓於水平搬送機構56。輥移動機構72使加壓輥70往垂直方向下方移動。關於加壓輥70與輥移動機構72之詳情於後述。基板W1在藉由加壓輥70施壓於水平搬送機構56之狀態下,藉由水平搬送機構56朝向處理區域82中搬送。When the substrate W1 is arranged at an appropriate position on the horizontal transfer mechanism 56, the pressing roller 70 of the horizontal transfer mechanism 56 can press the substrate W1 toward the horizontal transfer mechanism 56 and move downward and vertically, and press the substrate W1 to Horizontal transfer mechanism 56. The roller moving mechanism 72 moves the pressure roller 70 downward in the vertical direction. Details of the pressure roller 70 and the roller moving mechanism 72 will be described later. The substrate W1 is transported toward the processing area 82 by the horizontal transport mechanism 56 in a state where the substrate W1 is pressed by the horizontal transport mechanism 56 by the pressure roller 70.
此外,在第一搬送路徑52上設置洗淨基板W1之洗淨單元57;及乾燥基板W1之乾燥單元58。一種實施形態係洗淨單元57具有:第一洗淨單元57a;及位於第一洗淨單元57a下游側之第二洗淨單元57b。第一洗淨單元57a將DIW(無離子水(De-Ionized Water);相當於洗淨液之一例)噴射於基板W1之兩面或一面來洗淨基板W1。第二洗淨單元57b將DIW與氣體同時噴射於基板W1之兩面或一面,除去基板W1表面的微粒子。第二洗淨單元57b所噴射之氣體可使用潔淨乾燥空氣(clean dry air : CDA)或氮。第一洗淨單元57a及第二洗淨單元57b係使用液體或氣體來洗淨基板W1之所謂非接觸式的洗淨單元。乾燥單元58例如係從細長的狹縫薄層狀噴出壓縮氣體的所謂氣刀(Air Knife),而除去或乾燥附著於基板W1之兩面或一面的洗淨液。乾燥單元58係使用氣體乾燥基板W1之所謂非接觸式的乾燥單元。Further, a cleaning unit 57 for cleaning the substrate W1 and a drying unit 58 for drying the substrate W1 are provided on the first conveyance path 52. The washing unit 57 according to one embodiment includes a first washing unit 57a and a second washing unit 57b located downstream of the first washing unit 57a. The first cleaning unit 57a sprays DIW (De-Ionized Water; equivalent to an example of a cleaning liquid) on both or one side of the substrate W1 to clean the substrate W1. The second cleaning unit 57b sprays DIW and gas on both or one surface of the substrate W1 at the same time, and removes particles on the surface of the substrate W1. As the gas sprayed from the second cleaning unit 57b, clean dry air (CDA) or nitrogen can be used. The first cleaning unit 57a and the second cleaning unit 57b are so-called non-contact cleaning units that use a liquid or gas to clean the substrate W1. The drying unit 58 is, for example, a so-called Air Knife that ejects compressed gas from the thin slits in a thin layer, and removes or dries the cleaning liquid attached to both or one side of the substrate W1. The drying unit 58 is a so-called non-contact drying unit that uses a gas to dry the substrate W1.
第一洗淨單元57a、第二洗淨單元57b、及乾燥單元58藉由各自獨立之處理室(chamber)所包圍,連通各個處理室之間的開口藉由無圖示之空氣幕(Air Curtain)等分離環境。第一洗淨單元57a及第二洗淨單元57b連接用於將DIW供給至此等單元的DIW供給管線59。此外,第二洗淨單元57b及乾燥單元58連接用於將氣體供給至此等單元之氣體供給管線60。DIW供給管線59中設置用於捕捉DIW中之微粒子的過濾器59a;及測定DIW之流量的流量計59b。氣體供給管線60中設置用於捕捉氣體中之微粒子的過濾器60a。The first cleaning unit 57a, the second cleaning unit 57b, and the drying unit 58 are surrounded by separate processing chambers, and the openings connecting the processing chambers are connected by an air curtain (Air Curtain, not shown). ) And so on. The first washing unit 57a and the second washing unit 57b are connected to a DIW supply line 59 for supplying DIW to these units. Further, the second washing unit 57b and the drying unit 58 are connected to a gas supply line 60 for supplying gas to these units. The DIW supply line 59 is provided with a filter 59a for capturing particles in the DIW; and a flow meter 59b for measuring the flow rate of the DIW. The gas supply line 60 is provided with a filter 60a for capturing fine particles in the gas.
鉛直搬送路徑53上設置接收藉由水平搬送機構56所搬送之基板W1,並將基板W1從第一搬送路徑52朝向第二搬送路徑54在鉛直方向搬送的鉛直搬送機構61。鉛直搬送機構61例如具有:支撐基板W1之支撐台;及使支撐台升降之升降機構。鉛直搬送機構61亦可具有用於從支撐台將基板W1送交設於第二搬送路徑54之無圖示的水平搬送機構之輥子等的基板搬送機構。如本實施形態,即使將第一搬送路徑52與第二搬送路徑54在上下方向並列配置時,仍可藉由鉛直搬送機構61將基板W1從第一搬送路徑52搬送至第二搬送路徑54。The vertical transfer path 53 is provided with a vertical transfer mechanism 61 that receives the substrate W1 transferred by the horizontal transfer mechanism 56 and transfers the substrate W1 from the first transfer path 52 to the second transfer path 54 in the vertical direction. The vertical transfer mechanism 61 includes, for example, a support table that supports the substrate W1, and a lifting mechanism that raises and lowers the support table. The vertical conveyance mechanism 61 may include a substrate conveyance mechanism such as a roller for conveying the substrate W1 from the support table to a horizontal conveyance mechanism (not shown) provided in the second conveyance path 54. As in this embodiment, even when the first transfer path 52 and the second transfer path 54 are arranged side by side in the up-down direction, the substrate W1 can be transferred from the first transfer path 52 to the second transfer path 54 by the vertical transfer mechanism 61.
第二搬送路徑54上設置用於將鉛直搬送機構61所搬送之基板W1朝向出口55而水平搬送的無圖示之水平搬送機構。該水平搬送機構與水平搬送機構56同樣地亦可由輥子等構成,亦可由習知之機器人手臂構成。此外,在第二搬送路徑54上設置從上方朝向下方送出氣體之FFU(風扇過濾器單元(Fan Filter Unit)等送風單元62。圖示之例係送風單元62在第二搬送路徑54之起點附近與終點附近分別各設1個。從送風單元62送出之氣體例如可使用潔淨乾燥空氣或氮。在第二搬送路徑54之出口55附近可設置進行從出口55取出之基板W1的位置調整之對準機構。藉此,可將基板W1配置在水平搬送機構上適當的位置,第一圖所示之基板搬送裝置27可更確實保持基板W1並從出口55取出。A horizontal transfer mechanism (not shown) is provided on the second transfer path 54 for horizontally transferring the substrate W1 transferred by the vertical transfer mechanism 61 toward the exit 55. This horizontal conveyance mechanism may be constituted by a roller or the like in the same manner as the horizontal conveyance mechanism 56, or may be constituted by a known robot arm. In addition, the second conveyance path 54 is provided with an air-supply unit 62 such as FFU (Fan Filter Unit) that sends out gas from above to below. The example shown in the figure shows that the air-flow unit 62 is near the start point of the second conveyance path 54 One each near the end point. For example, clean dry air or nitrogen can be used for the gas sent from the air blowing unit 62. A pair of position adjustments for the substrate W1 taken out from the outlet 55 can be provided near the outlet 55 of the second conveying path 54 In this way, the substrate W1 can be arranged at an appropriate position on the horizontal transfer mechanism, and the substrate transfer device 27 shown in the first figure can more surely hold the substrate W1 and take it out from the outlet 55.
說明使用以上說明之洗淨裝置50來洗淨基板W1的程序。首先,基板搬送裝置27保持在第一圖所示之鍍覆裝置100中鍍覆後的基板W1。此時,雖然基板W1藉由第一圖所示之噴吹槽35排液,不過其表面可潮濕亦可乾燥。洗淨裝置50之入口閘門51a打開時,基板搬送裝置27經由入口51將基板W1投入洗淨裝置50中。基板W1投入洗淨裝置50時關閉入口閘門51a。A procedure for cleaning the substrate W1 using the cleaning device 50 described above will be described. First, the substrate transfer device 27 holds the substrate W1 plated in the plating device 100 shown in the first figure. At this time, although the substrate W1 is drained by the blowing tank 35 shown in the first figure, its surface may be wet or dry. When the entrance gate 51 a of the cleaning device 50 is opened, the substrate transfer device 27 puts the substrate W1 into the cleaning device 50 through the inlet 51. When the substrate W1 is put into the cleaning device 50, the entrance gate 51a is closed.
其次,加壓輥70朝向水平搬送機構56移動至垂直方向下方,將基板W1施壓於水平搬送機構56。基板W1在入口51中,在被加壓輥70施壓的狀態下藉由水平搬送機構56搬送。洗淨裝置50之水平搬送機構56沿著第一搬送路徑52搬送從入口51投入的基板W1。基板W1在第一搬送路徑52上搬送期間藉由第一洗淨單元57a及第二洗淨單元57b實施非接觸式洗淨。具體而言,首先,第一洗淨單元57a對基板W1表面噴射DIW進行洗淨,繼續第二洗淨單元57b對基板W1表面同時噴射洗淨液及氣體進行洗淨。然後,基板W1在乾燥單元58中藉由氣刀除去洗淨液並乾燥。Next, the pressure roller 70 moves downward toward the horizontal transfer mechanism 56 and presses the substrate W1 to the horizontal transfer mechanism 56. The substrate W1 is conveyed by the horizontal conveyance mechanism 56 in a state of being pressed by the pressure roller 70 in the inlet 51. The horizontal transfer mechanism 56 of the cleaning device 50 transfers the substrate W1 input from the inlet 51 along the first transfer path 52. While the substrate W1 is being conveyed on the first conveyance path 52, the first and second cleaning units 57 a and 57 b perform non-contact cleaning. Specifically, first, the first cleaning unit 57a sprays DIW on the surface of the substrate W1 for cleaning, and continues the second cleaning unit 57b to spray cleaning liquid and gas on the surface of the substrate W1 for cleaning. Then, the substrate W1 is removed by an air knife in a drying unit 58 and dried.
通過第一搬送路徑52之基板W1被鉛直搬送機構61接收。鉛直搬送機構61從第一搬送路徑52朝向第二搬送路徑54在鉛直方向搬送基板W1。搬送至第二搬送路徑54之基板W1藉由無圖示之水平搬送機構而沿著第二搬送路徑54搬送。送風單元62在第二搬送路徑54上從上方朝向下方送出氣體。藉此,可將洗淨裝置50中之微粒子按壓到下方,可將第二搬送路徑54之環境保持潔淨。The substrate W1 passing through the first transfer path 52 is received by the vertical transfer mechanism 61. The vertical transfer mechanism 61 transfers the substrate W1 in the vertical direction from the first transfer path 52 to the second transfer path 54. The substrate W1 transported to the second transport path 54 is transported along the second transport path 54 by a horizontal transport mechanism (not shown). The air blowing unit 62 sends out gas from above to below on the second conveyance path 54. Thereby, the fine particles in the cleaning device 50 can be pressed downward, and the environment of the second conveyance path 54 can be kept clean.
將基板W1搬送至出口55附近時,打開出口閘門55a,第一圖所示之基板搬送裝置27經由出口55而將基板W1取出到洗淨裝置50外。基板搬送裝置27將從洗淨裝置50取出之基板W1收納於第一圖所示之匣盒台25中的匣盒25a。When the substrate W1 is transferred to the vicinity of the outlet 55, the outlet gate 55a is opened, and the substrate transfer device 27 shown in the first figure takes the substrate W1 out of the cleaning device 50 through the outlet 55. The substrate transfer device 27 stores the substrate W1 taken out from the cleaning device 50 in a cassette 25 a in a cassette stage 25 shown in the first figure.
其次,藉由第三圖至第八圖詳細說明設於可隔著基板W1而與水平搬送機構56相對的位置,可將基板W1施壓於水平搬送機構56的加壓輥70;及使加壓輥70朝向水平搬送機構56移動,在加壓輥70上使基板W1施壓於水平搬送機構56之輥移動機構72。Next, with reference to the third to eighth figures, the pressure roller 70 provided at a position opposed to the horizontal transfer mechanism 56 across the substrate W1 and capable of pressing the substrate W1 to the horizontal transfer mechanism 56 will be described in detail; The pressure roller 70 moves toward the horizontal conveyance mechanism 56 and presses the substrate W1 on the pressure roller 70 to a roller moving mechanism 72 of the horizontal conveyance mechanism 56.
首先,藉由第三圖、第四圖說明加壓輥70不存在時產生的問題。如第三圖所示,洗淨基板W1之洗淨裝置50藉由水平搬送機構56將基板W1搬送至洗淨裝置50中時,翹曲大之基板W1與水平搬送機構56的接觸面積變少。因而,導致水平搬送機構56空轉而無法搬送基板W1。First, the problems occurring when the pressure roller 70 does not exist will be described with reference to the third and fourth figures. As shown in the third figure, when the cleaning device 50 for cleaning the substrate W1 transfers the substrate W1 to the cleaning device 50 by the horizontal transfer mechanism 56, the contact area between the substrate W1 with large warpage and the horizontal transfer mechanism 56 is reduced. . Therefore, the horizontal transfer mechanism 56 is idling and the substrate W1 cannot be transferred.
此外,如第四圖所示,翹曲大之基板W1即使可藉由水平搬送機構56搬送基板W1,基板W1仍會干擾到對洗淨裝置50中之處理區域82的入口之狹縫76,而產生無法通過狹縫76之問題。該狹縫76之寬度儘量設計狹窄,這是為了防止洗淨裝置50中之氣體等洩漏到洗淨裝置50的外部。In addition, as shown in the fourth figure, even if the substrate W1 with large warpage can be transferred by the horizontal transfer mechanism 56, the substrate W1 will still interfere with the slit 76 at the entrance of the processing area 82 in the cleaning device 50. This causes a problem that the slit 76 cannot pass through. The width of the slit 76 is designed to be as narrow as possible. This is to prevent the gas or the like in the cleaning device 50 from leaking to the outside of the cleaning device 50.
第五圖、第六圖係顯示本實施形態之加壓輥70與輥移動機構72的前視圖。加壓輥70安裝於機架80。機架80上安裝輥移動機構72。輥移動機構72安裝於設置入口51部位之洗淨裝置50的框體上部78。輥移動機構72例如係空氣氣缸,且上下方向驅動機架80。輥移動機構72可使用任意之驅動機構,只要係可上下方向驅動機架80者即可。The fifth and sixth figures are front views of the pressure roller 70 and the roller moving mechanism 72 of this embodiment. The pressure roller 70 is mounted on the frame 80. A roller moving mechanism 72 is mounted on the frame 80. The roller moving mechanism 72 is attached to the upper frame portion 78 of the cleaning device 50 provided with the entrance 51. The roller moving mechanism 72 is, for example, an air cylinder, and drives the frame 80 in the vertical direction. Any driving mechanism can be used for the roller moving mechanism 72 as long as it can drive the frame 80 in the vertical direction.
第五圖顯示加壓輥70按壓於基板W1之前的狀態,第六圖顯示加壓輥70藉由輥移動機構72向下方移動,而加壓輥70充分按壓於基板W1時的狀態。加壓輥70壓住基板W1之可接觸部位。藉由加壓輥70而矯正了翹曲之基板W1不致干擾到處理區域82之入口的狹縫76而搬送。The fifth figure shows a state before the pressure roller 70 is pressed against the substrate W1, and the sixth figure shows a state when the pressure roller 70 is moved downward by the roller moving mechanism 72 and the pressure roller 70 is fully pressed against the substrate W1. The pressure roller 70 presses the accessible portion of the substrate W1. The warped substrate W1 corrected by the pressure roller 70 is conveyed without disturbing the slit 76 at the entrance of the processing area 82.
第七圖顯示本實施形態之加壓輥70與輥移動機構72的俯視圖。機架80上,於本實施形態之情況係設有14個加壓輥70。加壓輥70數量依基板之種類及尺寸等而定,只要可矯正翹曲即可。依基板種類亦可設置1個以上之加壓輥70。四方形基板時,加壓輥數量至少應在基板之4個角各設1個,亦即應為4個。加壓輥70表面之材質可為金屬、塑膠等。加壓輥70之配置及尺寸要依入口51中之空間大小、基板種類及尺寸等而定。The seventh figure shows a plan view of the pressure roller 70 and the roller moving mechanism 72 in this embodiment. The frame 80 is provided with 14 pressure rollers 70 in the case of this embodiment. The number of the pressure rollers 70 depends on the type and size of the substrate, as long as the warpage can be corrected. One or more pressure rollers 70 may be provided depending on the type of the substrate. For a square substrate, the number of pressure rollers should be at least one at each of the four corners of the substrate, that is, four. The material of the surface of the pressure roller 70 may be metal, plastic, or the like. The arrangement and size of the pressure roller 70 depend on the size of the space in the inlet 51, the type and size of the substrate, and the like.
加壓輥70與基板W1之接觸位置係基板W1可接觸之位置。再者,加壓輥70亦考慮基板W1之強度及材質等,亦可僅在基板W1之指定部位接觸的方式配置輥子。例如本實施形態,可僅在基板W1之寬度方向中央部與兩邊緣部接觸加壓輥70的方式來配置加壓輥70。The contact position between the pressure roller 70 and the substrate W1 is a position where the substrate W1 can contact. In addition, the pressure roller 70 also considers the strength and material of the substrate W1, and the rollers may be arranged so as to be in contact with only a specified portion of the substrate W1. For example, in the present embodiment, the pressure roller 70 may be arranged so that the center portion and the both edge portions of the substrate W1 in the width direction contact the pressure roller 70.
加壓輥70之旋轉軸84經由軸承而安裝於機架80。因此加壓輥70可旋轉。亦可不使用軸承。本實施形態不具旋轉驅動加壓輥70之驅動機構,不過亦可具有虛線所示之驅動機構88。驅動機構88之數量亦可依機架80之尺寸/重量、加壓輥70之數量/尺寸/重量、基板之種類/尺寸等來設定。The rotation shaft 84 of the pressure roller 70 is mounted on the frame 80 via a bearing. Therefore, the pressure roller 70 can be rotated. It is not necessary to use bearings. This embodiment does not have a driving mechanism for rotationally driving the pressure roller 70, but may have a driving mechanism 88 shown by a dotted line. The number of driving mechanisms 88 can also be set according to the size / weight of the frame 80, the number / size / weight of the pressure rollers 70, the type / size of the substrate, and the like.
為了減輕重量而在機架80中設有2個開口部86。開口部86之形狀/尺寸/數量、及機架80的形狀/尺寸,可考慮減輕重量及對機架80所要求的強度來適切設定。本實施形態之機架80及輥移動機構72係1個,不過並非限於此者。亦可在1個機架80上設置複數個輥移動機構72,亦可設置複數個機架80。機架80及輥移動機構72數量亦可依基板W1之種類及尺寸、以及入口51中之空間大小來設定。機架80之材質可為金屬、塑膠等。In order to reduce weight, two openings 86 are provided in the frame 80. The shape / size / number of the openings 86 and the shape / size of the frame 80 can be appropriately set in consideration of weight reduction and strength required for the frame 80. The number of the frame 80 and the roller moving mechanism 72 in this embodiment is one, but it is not limited to this. A plurality of roller moving mechanisms 72 may be provided on one frame 80, and a plurality of frames 80 may also be provided. The number of the frame 80 and the roller moving mechanism 72 can also be set according to the type and size of the substrate W1 and the size of the space in the entrance 51. The material of the frame 80 may be metal, plastic, or the like.
輥移動機構72設於機架80之中央部。輥移動機構72施加於基板W1之力道大小,係可矯正基板W1之翹曲的大小、及/或可防止水平搬送機構56空轉之大小、及/或基板W1可通過狹縫76之大小。The roller moving mechanism 72 is provided at the center of the frame 80. The magnitude of the force exerted by the roller moving mechanism 72 on the substrate W1 is a magnitude capable of correcting the warpage of the substrate W1 and / or a magnitude capable of preventing the horizontal transfer mechanism 56 from idling, and / or a magnitude through which the substrate W1 can pass through the slit 76.
在機架80之4個角設有用於引導機架80之移動的引導部90。第八圖係引導部90之概略側剖面圖。引導部90具有軸92與花鍵94。軸92藉由固定具96而固定於上部78。經由花鍵94將機架80配置於軸92上。花鍵94固定於機架80上。軸92與花鍵94相對地可在軸方向亦即在上下方向移動。The four corners of the frame 80 are provided with guide portions 90 for guiding the movement of the frame 80. The eighth figure is a schematic side sectional view of the guide portion 90. The guide portion 90 includes a shaft 92 and a spline 94. The shaft 92 is fixed to the upper portion 78 by a fixture 96. The frame 80 is arranged on the shaft 92 via a spline 94. The spline 94 is fixed to the frame 80. The shaft 92 and the spline 94 are movable in the axial direction, that is, in the vertical direction.
所謂花鍵94,一般而言係在軸與軸通過之孔的嵌合部分設有齒者。花鍵94亦可為滾珠花鍵。因為以下原因會使用滾珠花鍵。軸在軸方向移動時,軸方向之移動係面接觸,且因為滑動磨擦所以有時滑動阻力大。其對策為在相當於花鍵齒之部分配置滾珠(鋼珠),進行滾動磨擦以大幅降低滑動阻力者稱為滾珠花鍵。花鍵94亦可並非花鍵。亦可僅為圓棒、方棒與僅為圓孔、方孔等之組合。本實施形態之引導部90數量係4個。引導部90之數量、配置、尺寸依基板的種類及尺寸等而定。The spline 94 is generally provided with a tooth at a fitting portion of a shaft and a hole through which the shaft passes. The spline 94 may also be a ball spline. Ball splines are used for the following reasons. When the shaft moves in the axial direction, the movement in the axial direction comes into contact with the surface, and sliding resistance may be large due to sliding friction. The countermeasure is to arrange balls (steel balls) on the part corresponding to the spline teeth, and to perform rolling friction to greatly reduce the sliding resistance is called ball spline. The spline 94 may not be a spline. It can also be a combination of only round rods, square rods, and only round holes, square holes, and the like. The number of the guide portions 90 in this embodiment is four. The number, arrangement, and size of the guides 90 depend on the type, size, and the like of the substrate.
關於輥移動機構72與引導部90之配置並非限定於第七圖者,例如亦可在機架80之4個角設置輥移動機構72,並在機架80之中央部及周邊部設置引導部90。輥移動機構72與加壓輥70與機架80亦可整體可在水平方向移動者。因而,例如亦可設置安裝於可在水平方向移動輥移動機構72與引導部90之構件,並在水平方向驅動該構件之驅動部。The arrangement of the roller moving mechanism 72 and the guide portion 90 is not limited to the seventh figure. For example, the roller moving mechanism 72 may be provided at four corners of the frame 80, and the guide portion may be provided at the central portion and the peripheral portion of the frame 80 90. The roller moving mechanism 72, the pressure roller 70, and the frame 80 may be movable in the horizontal direction as a whole. Therefore, for example, a member that is mounted on a member that can move the roller moving mechanism 72 and the guide portion 90 in the horizontal direction and that drives the member in the horizontal direction may be provided.
在洗淨基板W1之洗淨裝置50中洗淨基板W1的洗淨方法進行如下。將基板W1從入口51投入洗淨裝置50中。將基板W1搭載於水平搬送機構56上。使加壓輥70藉由輥移動機構72朝向水平搬送機構56移動,並藉由加壓輥70將基板W1施壓於水平搬送機構56。在將基板W1施壓於水平搬送機構56之狀態下,將基板W1搬送至處理區域82。在處理區域82洗淨及乾燥基板W1。The cleaning method for cleaning the substrate W1 in the cleaning device 50 for cleaning the substrate W1 is performed as follows. The substrate W1 is put into the cleaning device 50 from the inlet 51. The substrate W1 is mounted on the horizontal transfer mechanism 56. The pressure roller 70 is moved toward the horizontal conveyance mechanism 56 by the roller moving mechanism 72, and the substrate W1 is pressed to the horizontal conveyance mechanism 56 by the pressure roller 70. The substrate W1 is transported to the processing area 82 while the substrate W1 is pressed to the horizontal transport mechanism 56. The substrate W1 is washed and dried in the processing area 82.
其次,詳係說明第一圖所示之洗淨裝置50的其他實施形態。第九圖係洗淨裝置50之其他實施形態的概略側剖面圖。洗淨裝置50具有:基板W1之入口51、第一搬送路徑52、鉛直搬送路徑53、第二搬送路徑54、及基板W1的出口55。如圖示,第一搬送路徑52與第二搬送路徑54在上下方向並列配置,第一搬送路徑52位於第二搬送路徑之下方。第一搬送路徑52係與入口51連通而搬送從入口51投入之基板W1的路徑。第二搬送路徑54係在與第一搬送路徑52中搬送基板W1之方向相反方向搬送基板W1的路徑。第二搬送路徑54經由鉛直搬送路徑53而與第一搬送路徑相連,而且也與出口連通。鉛直搬送路徑53係以連接第一搬送路徑52與第二搬送路徑之方式在鉛直方向延伸的路徑。Next, another embodiment of the cleaning device 50 shown in the first figure will be described in detail. The ninth figure is a schematic side sectional view of another embodiment of the cleaning device 50. The cleaning device 50 includes an inlet 51 of the substrate W1, a first transfer path 52, a vertical transfer path 53, a second transfer path 54, and an outlet 55 of the substrate W1. As shown in the figure, the first conveying path 52 and the second conveying path 54 are arranged side by side in the vertical direction, and the first conveying path 52 is located below the second conveying path. The first conveyance path 52 is a path that communicates with the inlet 51 and conveys the substrate W1 loaded from the inlet 51. The second conveyance path 54 is a path that conveys the substrate W1 in a direction opposite to the direction in which the substrate W1 is conveyed in the first conveyance path 52. The second conveyance path 54 is connected to the first conveyance path via a vertical conveyance path 53 and also communicates with the exit. The vertical conveyance path 53 is a path extending in the vertical direction so as to connect the first conveyance path 52 and the second conveyance path.
在入口51設置用於開閉入口51之入口閘門51a。此外,在出口55設置用於開閉出口55之出口閘門55a。將洗淨裝置50如本實施形態地搭載於鍍覆裝置100時,或例如搭載於CMP裝置等時,由於在洗淨裝置50中會有洗淨時產生的微粒子浮游,因此,與鍍覆裝置100或CMP裝置等之環境比較其潔淨度較低。若將洗淨裝置50中維持負壓,即可抑制洗淨裝置50中之微粒子流出洗淨裝置50外部,不過也有可能因為壓力調整裝置故障等而無法在洗淨裝置50中維持負壓。本實施形態由於可以入口閘門51a及出口閘門55a分離洗淨裝置50之內部與外部,因此可進一步抑制洗淨裝置50中之微粒子流出外部。An entrance gate 51 a for opening and closing the entrance 51 is provided at the entrance 51. Further, an exit gate 55 a for opening and closing the exit 55 is provided at the exit 55. When the cleaning device 50 is mounted on the plating device 100 as in this embodiment, or when it is mounted on, for example, a CMP device, the cleaning device 50 floats with particles generated during cleaning, and is therefore similar to the plating device. Environments such as 100 or CMP equipment have lower cleanliness. If the negative pressure is maintained in the cleaning device 50, it is possible to prevent the particles in the cleaning device 50 from flowing out of the cleaning device 50. However, the negative pressure may not be maintained in the cleaning device 50 due to a failure of the pressure adjustment device or the like. In this embodiment, the entrance gate 51a and the exit gate 55a can separate the inside and the outside of the cleaning device 50, so that the particles in the cleaning device 50 can be further suppressed from flowing out.
如圖示,在第一搬送路徑52上設置具有將基板W1朝向鉛直搬送路徑53搬送之複數個輥子等的水平搬送機構56(搬送機構)。水平搬送機構56亦可依基板W1之強度或材質等,僅接觸於基板W1之指定部位的方式配置輥子而構成。例如可以水平搬送機構56之輥子僅接觸於基板W1之寬度方向中央部與兩邊緣部的方式,來配置水平搬送機構56的輥子。並可在第一搬送路徑52之入口51附近設置對於從入口51投入之基板W1進行位置調整的對準機構。藉此,可將從入口51投入之基板W1配置在水平搬送機構56上適當的位置。As shown in the figure, a horizontal conveyance mechanism 56 (conveyance mechanism) having a plurality of rollers or the like for conveying the substrate W1 toward the vertical conveyance path 53 is provided on the first conveyance path 52. The horizontal conveyance mechanism 56 may be configured by arranging rollers so that the substrate W1 contacts only a designated portion of the substrate W1 according to the strength, material, or the like of the substrate W1. For example, the rollers of the horizontal conveyance mechanism 56 may be arranged so that the rollers of the horizontal conveyance mechanism 56 may only contact the central portion and both edge portions in the width direction of the substrate W1. An alignment mechanism for adjusting the position of the substrate W1 inserted from the entrance 51 may be provided near the entrance 51 of the first conveyance path 52. Thereby, the board | substrate W1 put in from the inlet 51 can be arrange | positioned at an appropriate position on the horizontal conveyance mechanism 56.
此外,在第一搬送路徑52上設置洗淨基板W1之洗淨單元57;及乾燥基板W1之乾燥單元58。一種實施形態係洗淨單元57具有:第一洗淨單元57a;及位於第一洗淨單元57a下游側之第二洗淨單元57b。第一洗淨單元57a將DIW(無離子水(De-Ionized Water);相當於洗淨液之一例)噴射於基板W1之兩面或一面來洗淨基板W1。第二洗淨單元57b將DIW與氣體同時噴射於基板W1之兩面或一面,除去基板W1表面的微粒子。第二洗淨單元57b所噴射之氣體可使用潔淨乾燥空氣或氮。第一洗淨單元57a及第二洗淨單元57b係使用液體或氣體來洗淨基板W1之所謂非接觸式的洗淨單元。乾燥單元58例如係從細長的狹縫薄層狀噴出壓縮氣體的所謂氣刀(Air Knife),而除去或乾燥附著於基板W1之兩面或一面的洗淨液。乾燥單元58係使用氣體乾燥基板W1之所謂非接觸式的乾燥單元。Further, a cleaning unit 57 for cleaning the substrate W1 and a drying unit 58 for drying the substrate W1 are provided on the first conveyance path 52. The washing unit 57 according to one embodiment includes a first washing unit 57a and a second washing unit 57b located downstream of the first washing unit 57a. The first cleaning unit 57a sprays DIW (De-Ionized Water; equivalent to an example of a cleaning liquid) on both or one side of the substrate W1 to clean the substrate W1. The second cleaning unit 57b sprays DIW and gas on both or one surface of the substrate W1 at the same time, and removes particles on the surface of the substrate W1. As the gas sprayed from the second washing unit 57b, clean dry air or nitrogen can be used. The first cleaning unit 57a and the second cleaning unit 57b are so-called non-contact cleaning units that use a liquid or gas to clean the substrate W1. The drying unit 58 is, for example, a so-called Air Knife that ejects compressed gas from the thin slits in a thin layer, and removes or dries the cleaning liquid attached to both or one side of the substrate W1. The drying unit 58 is a so-called non-contact drying unit that uses a gas to dry the substrate W1.
第一洗淨單元57a、第二洗淨單元57b、及乾燥單元58藉由各自獨立之處理室所包圍,連通各個處理室之間的開口藉由無圖示之空氣幕(Air Curtain)等分離環境。第一洗淨單元57a及第二洗淨單元57b連接用於將DIW供給至此等單元的DIW供給管線59。此外,第二洗淨單元57b及乾燥單元58連接用於將氣體供給至此等單元之氣體供給管線60。DIW供給管線59中設置用於捕捉DIW中之微粒子的過濾器59a;及測定DIW之流量的流量計59b。氣體供給管線60中設置用於捕捉氣體中之微粒子的過濾器60a。The first cleaning unit 57a, the second cleaning unit 57b, and the drying unit 58 are surrounded by separate processing chambers, and the openings connecting the processing chambers are separated by an air curtain (Air Curtain) or the like (not shown). surroundings. The first washing unit 57a and the second washing unit 57b are connected to a DIW supply line 59 for supplying DIW to these units. Further, the second washing unit 57b and the drying unit 58 are connected to a gas supply line 60 for supplying gas to these units. The DIW supply line 59 is provided with a filter 59a for capturing particles in the DIW; and a flow meter 59b for measuring the flow rate of the DIW. The gas supply line 60 is provided with a filter 60a for capturing fine particles in the gas.
鉛直搬送路徑53上設置接收藉由水平搬送機構56所搬送之基板W1,並將基板W1從第一搬送路徑52朝向第二搬送路徑54在鉛直方向搬送的鉛直搬送機構61。鉛直搬送機構61例如具有:支撐基板W1之支撐台;及使支撐台升降之升降機構。鉛直搬送機構61亦可具有用於從支撐台將基板W1送交設於第二搬送路徑54之無圖示的水平搬送機構之輥子等的基板搬送機構。如本實施形態,即使將第一搬送路徑52與第二搬送路徑54在上下方向並列配置時,仍可藉由鉛直搬送機構61將基板W1從第一搬送路徑52搬送至第二搬送路徑54。The vertical transfer path 53 is provided with a vertical transfer mechanism 61 that receives the substrate W1 transferred by the horizontal transfer mechanism 56 and transfers the substrate W1 from the first transfer path 52 to the second transfer path 54 in the vertical direction. The vertical transfer mechanism 61 includes, for example, a support table that supports the substrate W1, and a lifting mechanism that raises and lowers the support table. The vertical conveyance mechanism 61 may include a substrate conveyance mechanism such as a roller for conveying the substrate W1 from the support table to a horizontal conveyance mechanism (not shown) provided in the second conveyance path 54. As in this embodiment, even when the first transfer path 52 and the second transfer path 54 are arranged side by side in the up-down direction, the substrate W1 can be transferred from the first transfer path 52 to the second transfer path 54 by the vertical transfer mechanism 61.
第二搬送路徑54上設置用於將鉛直搬送機構61所搬送之基板W1朝向出口55而水平搬送的無圖示之水平搬送機構。該水平搬送機構與水平搬送機構56同樣地亦可由輥子等構成,亦可由習知之機器人手臂構成。此外,在第二搬送路徑54上設置從上方朝向下方送出氣體之FFU(風扇過濾器單元(Fan Filter Unit)等送風單元62。圖示之例係送風單元62在第二搬送路徑54之起點附近與終點附近分別各設1個。從送風單元62送出之氣體例如可使用潔淨乾燥空氣或氮。在第二搬送路徑54之出口55附近可設置進行從出口55取出之基板W1的位置調整之對準機構。藉此,可將基板W1配置在水平搬送機構上適當的位置,第一圖所示之基板搬送裝置27可更確實保持基板W1並從出口55取出。A horizontal transfer mechanism (not shown) is provided on the second transfer path 54 for horizontally transferring the substrate W1 transferred by the vertical transfer mechanism 61 toward the exit 55. This horizontal conveyance mechanism may be constituted by a roller or the like in the same manner as the horizontal conveyance mechanism 56, or may be constituted by a known robot arm. In addition, the second conveyance path 54 is provided with an air-supply unit 62 such as FFU (Fan Filter Unit) that sends out gas from above to below. The example shown in the figure shows that the air-flow unit 62 is near the start point of the second conveyance path 54 One each near the end point. For example, clean dry air or nitrogen can be used for the gas sent from the air blowing unit 62. A pair of position adjustments for the substrate W1 taken out from the outlet 55 can be provided near the outlet 55 of the second conveying path 54 In this way, the substrate W1 can be arranged at an appropriate position on the horizontal transfer mechanism, and the substrate transfer device 27 shown in the first figure can more surely hold the substrate W1 and take it out from the outlet 55.
基板W1在出口55中,配置於水平搬送機構上之適當位置時,可將基板W1施壓於水平搬送機構的加壓部朝向水平搬送機構而移動至垂直方向下方,將基板W1施壓於水平搬送機構。移動機構使加壓部移動至垂直方向下方。基板W1在藉由加壓部而施壓於水平搬送機構的狀態下,藉由膜厚測定部測定鍍覆膜之膜厚,測定後,藉由基板搬送裝置27搬送至洗淨裝置50外部。關於加壓部與移動機構與膜厚測定部之詳情於後述。When the substrate W1 is arranged at an appropriate position on the horizontal conveying mechanism in the outlet 55, the pressing portion of the substrate W1 can be moved to the horizontal conveying mechanism and moved downward to the horizontal conveying mechanism to press the substrate W1 to the horizontal direction. Transfer agency. The moving mechanism moves the pressing portion downward in the vertical direction. In a state where the substrate W1 is pressed to the horizontal transfer mechanism by the pressurizing section, the film thickness of the plated film is measured by the film thickness measuring section. After the measurement, the substrate W1 is transferred to the outside of the cleaning device 50 by the substrate transfer device 27. Details of the pressurizing section, the moving mechanism, and the film thickness measuring section will be described later.
測定結果,因為鍍覆膜之膜厚薄、及/或膜厚不均勻而不合格時,無須對基板再度塗布抗蝕層而再度鍍覆。亦即,不合格之基板藉由基板搬送裝置27送至入口51來再度鍍覆。另外,不合格時,亦可不再度鍍覆而廢棄基板W1。As a result of the measurement, if the film thickness of the plating film is thin and / or the film thickness is not uniform, it is not necessary to apply a resist layer to the substrate again and perform plating again. That is, the defective substrate is transferred to the inlet 51 by the substrate transfer device 27 to be plated again. In addition, if it fails, the substrate W1 may be discarded without further plating.
說明使用以上說明之洗淨裝置50來洗淨基板W1的程序。首先,基板搬送裝置27保持在第一圖所示之鍍覆裝置100中鍍覆後的基板W1。此時,基板W1在第一圖所示之噴吹槽35中排液,不過其表面亦可潮濕亦可乾燥。當洗淨裝置50之入口閘門51a打開時,基板搬送裝置27經由入口51將基板W1投入洗淨裝置50中。基板W1投入洗淨裝置50時關閉入口閘門51a。A procedure for cleaning the substrate W1 using the cleaning device 50 described above will be described. First, the substrate transfer device 27 holds the substrate W1 plated in the plating device 100 shown in the first figure. At this time, the substrate W1 is drained in the blowing tank 35 shown in the first figure, but its surface may be wet or dry. When the entrance gate 51 a of the cleaning device 50 is opened, the substrate transfer device 27 puts the substrate W1 into the cleaning device 50 through the inlet 51. When the substrate W1 is put into the cleaning device 50, the entrance gate 51a is closed.
洗淨裝置50 之水平搬送機構56沿著第一搬送路徑52搬送從入口51投入的基板W1。基板W1在第一搬送路徑52上搬送中藉由第一洗淨單元57a及第二洗淨單元57b非接觸式洗淨。具體而言,首先,第一洗淨單元57a在基板W1之表面噴射DIW進行洗淨,繼續第二洗淨單元57b在基板W1之表面同時噴射洗淨液及氣體進行洗淨。然後,基板W1在乾燥單元58中藉由氣刀除去洗淨液並且乾燥。The horizontal transfer mechanism 56 of the cleaning device 50 transfers the substrate W1 input from the inlet 51 along the first transfer path 52. The substrate W1 is cleaned in a non-contact manner by the first cleaning unit 57 a and the second cleaning unit 57 b while being conveyed on the first conveyance path 52. Specifically, first, the first cleaning unit 57a sprays DIW on the surface of the substrate W1 for cleaning, and continues the second cleaning unit 57b sprays cleaning liquid and gas on the surface of the substrate W1 for cleaning. Then, the substrate W1 is removed by the air knife in the drying unit 58 and dried.
通過第一搬送路徑52之基板W1被鉛直搬送機構61接收。鉛直搬送機構61從第一搬送路徑52朝向第二搬送路徑54鉛直方向搬送基板W1。在第二搬送路徑54上搬送之基板W1藉由無圖示之水平搬送機構沿著第二搬送路徑54搬送。送風單元62在第二搬送路徑54上從上方朝向下方送出氣體。藉此,可將洗淨裝置50中之微粒子按壓至下方,可保持第二搬送路徑54之環境氣體潔淨。The substrate W1 passing through the first transfer path 52 is received by the vertical transfer mechanism 61. The vertical transfer mechanism 61 vertically transfers the substrate W1 from the first transfer path 52 toward the second transfer path 54. The substrate W1 transported on the second transport path 54 is transported along the second transport path 54 by a horizontal transport mechanism (not shown). The air blowing unit 62 sends out gas from above to below on the second conveyance path 54. Thereby, the fine particles in the cleaning device 50 can be pressed downward, and the ambient gas in the second conveyance path 54 can be kept clean.
基板W1被搬送至出口55附近時,打開出口閘門55a,第一圖所示之基板搬送裝置27經由出口55從洗淨裝置50中取出基板W1。基板搬送裝置27將從洗淨裝置50取出之基板W1收納於第一圖所示之匣盒台25上的匣盒25a中。When the substrate W1 is transferred to the vicinity of the outlet 55, the outlet gate 55a is opened, and the substrate transfer device 27 shown in the first figure takes out the substrate W1 from the cleaning device 50 through the outlet 55. The substrate transfer device 27 stores the substrate W1 taken out from the cleaning device 50 in a cassette 25 a on the cassette table 25 shown in the first figure.
其次,藉由第十圖~第十三圖說明在出口55之鍍覆膜的膜厚詳情。如第十一圖所示,洗淨裝置50具有:支撐進行了鍍覆處理與洗淨處理之基板W1(被處理物)的水平搬送機構102(支撐部);設於可隔著基板W1而與水平搬送機構102相對之位置,可將基板W1施壓於水平搬送機構102之加壓部104;使加壓部104朝向水平搬送機構102移動,藉由加壓部104將基板W1施壓於水平搬送機構102的移動機構106;及測定基板W1之鍍覆膜膜厚的膜厚測定部108。Next, details of the film thickness of the plating film at the outlet 55 will be described with reference to the tenth to thirteenth drawings. As shown in FIG. 11, the cleaning device 50 includes a horizontal transfer mechanism 102 (supporting portion) that supports the substrate W1 (to-be-processed object) subjected to the plating process and the cleaning process, and is provided on the substrate W1 via the substrate W1. The position opposite to the horizontal conveying mechanism 102 can press the substrate W1 to the pressing part 104 of the horizontal conveying mechanism 102; the pressing part 104 can be moved toward the horizontal conveying mechanism 102, and the substrate W1 can be pressed by the pressing part 104 A moving mechanism 106 of the horizontal conveyance mechanism 102 and a film thickness measuring unit 108 that measures the thickness of the plated film of the substrate W1.
以下,說明將加壓部104、移動機構106、膜厚測定部108配置於出口55之情況,不過此等亦可配置於出口55以外。例如,亦可設置於洗淨裝置50中之鉛直搬送路徑53或第二搬送路徑54的任何場所。鉛直搬送機構61之支撐台上有基板W1時,測定鍍覆膜之膜厚即可。此外,亦可在洗淨裝置50本體之外部且鍍覆裝置100的內部設置加壓部104、移動機構106、膜厚測定部108來測定膜厚。Hereinafter, the case where the pressurizing part 104, the moving mechanism 106, and the film thickness measurement part 108 are arrange | positioned at the exit 55 is demonstrated, However, These may be arrange | positioned other than the exit 55. For example, it may be provided in any place of the vertical conveyance path 53 or the second conveyance path 54 in the cleaning device 50. When the substrate W1 is provided on the support table of the vertical transfer mechanism 61, the film thickness of the plating film may be measured. In addition, the film thickness may be measured by providing a pressurizing section 104, a moving mechanism 106, and a film thickness measuring section 108 outside the main body of the cleaning device 50 and inside the plating device 100.
首先,藉由第十圖說明不存在加壓部104時產生的問題。為了在鍍覆後測定膜厚,例如第十圖所示,在出口55中之水平搬送機構102上設置翹曲大的基板W1。測定基板W1之鍍覆膜膜厚時,翹曲大之基板W1其翹曲之尺寸112達到數毫米以上。測定鍍覆膜之膜厚時,膜厚之測定值依膜厚測定器與基板W1的距離而變動,過去的問題是當翹曲之尺寸112達到數毫米以上時,無法具有必要精度地測定膜厚。First, a problem occurring when the pressurizing section 104 does not exist will be described with reference to a tenth figure. In order to measure the film thickness after plating, for example, as shown in the tenth figure, a substrate W1 having a large warpage is provided on the horizontal transfer mechanism 102 in the outlet 55. When the plating film thickness of the substrate W1 was measured, the warped size 112 of the substrate W1 having a large warpage was several millimeters or more. When measuring the film thickness of a plated film, the measurement value of the film thickness varies depending on the distance between the film thickness measuring device and the substrate W1. In the past, when the warped dimension 112 reached several millimeters or more, the film could not be measured with the necessary accuracy. thick.
第十一圖係顯示本申請案發明之一種實施形態的加壓部104與移動機構106與膜厚測定部108之前視圖。第十二圖係從第十一圖之AA方向觀看的俯視圖。本實施形態之基板W1的支撐部係搬送基板W1的水平搬送機構102,不過支撐部不拘,只要係支撐基板W1者即可。例如,亦可為固定之支撐部。水平搬送機構102具有:輥子114;及安裝有輥子114之旋轉軸116。旋轉軸116經由軸承而安裝於洗淨裝置50之機架(無圖示)上。旋轉軸116藉由無圖示之驅動機構(例如馬達)而旋轉驅動。輥子114與基板W1背面之可接觸的部分接觸。本實施形態之基板W1背面的側部與中央部係可接觸之部分。The eleventh figure is a front view showing the pressurizing section 104, the moving mechanism 106, and the film thickness measuring section 108 according to an embodiment of the invention of the present application. The twelfth figure is a plan view viewed from the direction AA of the eleventh figure. The support portion of the substrate W1 in the present embodiment is the horizontal transfer mechanism 102 that transports the substrate W1, but the support portion is not limited, as long as it supports the substrate W1. For example, it may be a fixed support portion. The horizontal conveyance mechanism 102 includes a roller 114 and a rotation shaft 116 to which the roller 114 is attached. The rotating shaft 116 is mounted on a frame (not shown) of the cleaning device 50 via a bearing. The rotation shaft 116 is rotationally driven by a driving mechanism (for example, a motor) (not shown). The roller 114 is in contact with a contactable portion on the back surface of the substrate W1. The side portion and the center portion of the back surface of the substrate W1 in this embodiment are contactable portions.
加壓部104可將基板W1施壓於水平搬送機構102。加壓部104與基板W1表面可接觸之部分接觸。本實施形態可接觸之部分如第十二圖所示,為基板W1表面的十字形部分。加壓部104之形狀配合可接觸之部分而係十字形。加壓部104之形狀不限於十字形。加壓部104之形狀例如可考慮可接觸之部分、需要測定膜厚之部分、及需要矯正翹曲之施壓部分來選擇。加壓部104之形狀例如可為多角形、圓形、橢圓形。The pressing section 104 can press the substrate W1 to the horizontal transfer mechanism 102. The pressurizing portion 104 is in contact with a portion accessible to the surface of the substrate W1. As shown in the twelfth figure, the accessible portion in this embodiment is a cross-shaped portion on the surface of the substrate W1. The shape of the pressing portion 104 is a cross shape in accordance with the accessible portion. The shape of the pressing portion 104 is not limited to a cross shape. The shape of the pressurizing portion 104 can be selected in consideration of, for example, a contactable portion, a portion where a film thickness needs to be measured, and a pressing portion which needs to correct warpage. The shape of the pressing portion 104 may be, for example, a polygon, a circle, or an oval.
使加壓部104朝向水平搬送機構102移動之移動機構106具有:氣缸118、感測器支撐板122、軸124、及引導部90。氣缸118藉由螺栓等而固定於出口55之上部機架128上。氣缸118可採用空壓氣缸、液壓氣缸、電動式氣缸等任何驅動方式。在氣缸118之軸124的前端安裝有加壓部104。軸124藉由氣缸118可在上下方向移動。The moving mechanism 106 that moves the pressurizing portion 104 toward the horizontal conveyance mechanism 102 includes a cylinder 118, a sensor support plate 122, a shaft 124, and a guide portion 90. The air cylinder 118 is fixed to the upper frame 128 of the outlet 55 by a bolt or the like. The cylinder 118 may adopt any driving method such as an air pressure cylinder, a hydraulic cylinder, and an electric cylinder. A pressurizing portion 104 is attached to a front end of a shaft 124 of the air cylinder 118. The shaft 124 is movable in the vertical direction by the air cylinder 118.
在軸124之中間部安裝有感測器支撐板122。本實施形態之感測器支撐板122係與基板W1大致相同大小的四方形平板。感測器支撐板122之形狀可為四方形以外之圓形、多角形、機架構造等。感測器支撐板122之形狀由膜厚測定部108之配置、後述之引導部90的配置、對感測器支撐板122本身要求之強度、重量等來決定。感測器支撐板122上經由感測器驅動部130而安裝有膜厚測定部108。A sensor support plate 122 is attached to a middle portion of the shaft 124. The sensor support plate 122 of this embodiment is a rectangular flat plate having a size substantially the same as that of the substrate W1. The shape of the sensor support plate 122 may be a circle other than a square, a polygon, a frame structure, or the like. The shape of the sensor support plate 122 is determined by the arrangement of the film thickness measurement portion 108, the arrangement of the guide portion 90 described later, and the strength and weight required for the sensor support plate 122 itself. A film thickness measuring section 108 is mounted on the sensor support plate 122 via the sensor driving section 130.
感測器驅動部130使膜厚測定部108在測定時移動。膜厚測定部108移動而在基板W1的複數個部位測定基板W1之鍍覆膜的膜厚。感測器支撐板122與加壓部104之材質係金屬、塑膠等。材質係考慮對感測器支撐板122與加壓部104要求之強度、重量、潔淨度、加工性等來決定。The sensor driving unit 130 moves the film thickness measurement unit 108 during measurement. The film thickness measurement unit 108 moves to measure the film thickness of the plating film on the substrate W1 at a plurality of locations on the substrate W1. The material of the sensor supporting plate 122 and the pressing portion 104 is metal, plastic, or the like. The material is determined in consideration of the strength, weight, cleanliness, processability, etc. required for the sensor support plate 122 and the pressurizing portion 104.
本實施形態如第十二圖所示設有4個膜厚測定部108。膜厚測定部108只要配置1個以上即可。此外,膜厚測定部108亦可無法移動。膜厚測定部108數量、配置及是否移動係考慮需要測定部位的數量、測定頻率等來決定。本實施形態如第十二圖所示,膜厚測定部108藉由感測器驅動部130而在基板W1上如箭頭134所示地移動。箭頭134顯示Y方向之移動。In this embodiment, as shown in FIG. 12, four film thickness measurement units 108 are provided. One or more film thickness measurement units 108 may be arranged. The film thickness measurement unit 108 may not be movable. The number, arrangement, and movement of the film thickness measurement units 108 are determined in consideration of the number of measurement locations, measurement frequency, and the like. In the present embodiment, as shown in FIG. 12, the film thickness measurement unit 108 moves on the substrate W1 as shown by an arrow 134 by the sensor driving unit 130. Arrow 134 shows the movement in the Y direction.
再者,膜厚測定部108可藉由水平搬送機構102而在基板W1上如箭頭134所示地移動。箭頭134顯示X方向之移動。X方向係藉由水平搬送機構102搬送基板W1之方向。Y方向係與X方向概略正交之方向。Y方向不限於與X方向概略正交之方向。Y方向只要是與X方向不同之方向,即可包含整個基板W1測定膜厚。The film thickness measurement unit 108 can be moved on the substrate W1 as shown by an arrow 134 by the horizontal transfer mechanism 102. Arrow 134 shows the movement in the X direction. The X direction is a direction in which the substrate W1 is transferred by the horizontal transfer mechanism 102. The Y direction is a direction roughly orthogonal to the X direction. The Y direction is not limited to a direction orthogonal to the X direction. As long as the Y direction is a direction different from the X direction, the film thickness can be measured including the entire substrate W1.
本實施形態在X方向之移動與在Y方向的移動係藉由不同之驅動機構來進行,不過亦可藉由單一之驅動機構進行X方向的移動與Y方向的移動。此外,本實施形態之膜厚測定部108僅進行X方向之移動與Y方向的移動,不過並非限於此者。膜厚測定部108亦可在曲線上移動。例如亦可圓形或多角形之螺旋狀地移動。In this embodiment, the movement in the X direction and the movement in the Y direction are performed by different driving mechanisms, but the movement in the X direction and the movement in the Y direction may also be performed by a single driving mechanism. In addition, the film thickness measurement unit 108 of this embodiment only performs movement in the X direction and movement in the Y direction, but it is not limited to this. The film thickness measurement unit 108 may also move on a curve. For example, a circular or polygonal spiral movement may be used.
感測器驅動部130可為空壓式、液壓式、電動式(例如線性馬達)之驅動部。並可從對感測器驅動部130要求之速度、位置精度、潔淨度、耗電量、強度、重量等來選擇驅動方式。The sensor driving unit 130 may be a driving unit of an air pressure type, a hydraulic type, or an electric type (for example, a linear motor). The driving method can be selected from the speed, position accuracy, cleanliness, power consumption, strength, weight, etc. required for the sensor driving section 130.
在感測器支撐板122之第十二圖所示的4處設有用於引導感測器支撐板122之引導部90。第十二圖中可看出引導部90係配置於加壓部104,不過第十二圖所示之引導部90的位置不過是將感測器支撐板122上之實際位置投影到加壓部104上而顯示者。Guide portions 90 for guiding the sensor support plate 122 are provided at four positions shown in the twelfth figure of the sensor support plate 122. It can be seen in the twelfth figure that the guide portion 90 is arranged on the pressure portion 104, but the position of the guide portion 90 shown in the twelfth figure is merely a projection of the actual position on the sensor support plate 122 onto the pressure portion Shown on 104.
第十三圖係引導部90之概略側剖面圖。引導部90具有:軸92與花鍵94。軸92藉由固定具96而固定於上部128。並經由花鍵94將感測器支撐板122配置於軸92上。花鍵94固定於感測器支撐板122。軸92與花鍵94可相對地在軸方向亦即在上下方向移動。The thirteenth figure is a schematic side sectional view of the guide portion 90. The guide portion 90 includes a shaft 92 and a spline 94. The shaft 92 is fixed to the upper portion 128 by a fixture 96. The sensor support plate 122 is arranged on the shaft 92 via the spline 94. The spline 94 is fixed to the sensor support plate 122. The shaft 92 and the spline 94 are relatively movable in the axial direction, that is, in the vertical direction.
所謂花鍵94,通常係在軸與軸通過之孔嵌合的部分設有齒者。花鍵94亦可係滾珠花鍵。依以下理由會使用到滾珠花鍵。軸在軸方向移動時,軸方向之移動係面接觸,且因為係滑動磨擦所以滑動阻力大時。其對策為在相當於花鍵之齒的部分配置滾珠(鋼珠),進行滾動磨擦,而大幅降低滑動阻力者,稱為滾珠花鍵。花鍵94亦可並非花鍵。亦可僅為圓棒、方棒,與僅為圓孔、方孔等之組合。本實施形態之引導部90的數量係4個。引導部90之數量、配置、尺寸依基板的種類及尺寸等而定。The so-called spline 94 is generally provided with a tooth at a portion where the shaft fits with a hole through which the shaft passes. The spline 94 may also be a ball spline. Ball splines are used for the following reasons. When the shaft moves in the axial direction, the movement in the axial direction is in contact with the surface, and the sliding resistance is large because of sliding friction. The countermeasure is to arrange balls (steel balls) on the part corresponding to the teeth of the spline and perform rolling friction to reduce the sliding resistance greatly, which is called ball spline. The spline 94 may not be a spline. It can also be a combination of round rods and square rods, and only round holes and square holes. The number of the guide portions 90 in this embodiment is four. The number, arrangement, and size of the guides 90 depend on the type, size, and the like of the substrate.
關於氣缸118與引導部90之配置並非限定於第十二圖者,例如,亦可在感測器支撐板122之4個角落設置氣缸118,並在感測器支撐板122之中央部及周邊部設置引導部90。此外,亦可在感測器支撐板122之4個角落設置引導部90,並在感測器支撐板122之中央及周邊部設置氣缸118。再者,氣缸118與引導部90亦可係整體可在水平方向移動者。因而,例如亦可設置將氣缸118與引導部90安裝於可在水平方向移動的構件上,並在水平方向驅動該構件之驅動部。The arrangement of the air cylinder 118 and the guide portion 90 is not limited to that shown in the twelfth figure. For example, the air cylinder 118 may be provided at four corners of the sensor support plate 122, and the center portion and the periphery of the sensor support plate 122 may be provided.部 被 制造 部 90。 The guide portion 90 is provided. In addition, the guide portions 90 may be provided at the four corners of the sensor support plate 122, and the air cylinder 118 may be provided at the center and peripheral portions of the sensor support plate 122. In addition, the air cylinder 118 and the guide portion 90 may be horizontally movable as a whole. Therefore, for example, a driving portion that mounts the air cylinder 118 and the guide portion 90 on a member that can be moved in the horizontal direction and drives the member in the horizontal direction may be provided.
第十一、十二圖之實施形態的加壓部104係形成板狀,不過加壓部並非限於板狀者,加壓部104亦可具有輥子與輥安裝部,輥子將基板W1施壓於水平搬送機構102。輥子數量只要可矯正翹曲即可,並宜至少有4個。輥安裝部係板或機架,移動機構106之軸124安裝於輥安裝部。此時,移動機構106經由輥安裝部與輥子而加壓基板W1。The pressing part 104 in the embodiment of the eleventh and twelfth figures is formed in a plate shape, but the pressing part is not limited to a plate shape. The pressing part 104 may also include a roller and a roller mounting portion. Horizontal transfer mechanism 102. As long as the number of rollers can correct the warpage, there should be at least four. The roller mounting portion is a plate or a frame, and the shaft 124 of the moving mechanism 106 is mounted on the roller mounting portion. At this time, the moving mechanism 106 presses the substrate W1 via the roller mounting portion and the roller.
膜厚測定部108例如可為渦電流感測器。渦電流感測器具有勵磁線圈與檢知線圈。使高頻交流電(2MHz~)在勵磁線圈上流動而產生交流磁場。勵磁線圈在其附近之基板W1的導電性金屬表面藉由交流磁場而產生渦電流。渦電流在抵消交流磁場之方向流動。藉由檢知線圈檢知藉由渦電流所產生的磁場。由於檢知線圈所檢知之磁場大小取決於基板W1的膜厚,因此可檢知膜厚。渦電流感測器檢知磁場大小作為在檢知線圈上流動之電流或檢知線圈的阻抗。The film thickness measurement unit 108 may be, for example, an eddy current sensor. The eddy current sensor has an excitation coil and a detection coil. High-frequency alternating current (2MHz ~) is caused to flow on the excitation coil to generate an alternating magnetic field. An AC magnetic field generates an eddy current on the conductive metal surface of the substrate W1 in the vicinity of the field coil. Eddy currents flow in a direction that cancels the AC magnetic field. The detection coil detects a magnetic field generated by an eddy current. Since the magnitude of the magnetic field detected by the detection coil depends on the film thickness of the substrate W1, the film thickness can be detected. The eddy current sensor detects the magnitude of the magnetic field as the current flowing in the detection coil or the impedance of the detection coil.
膜厚測定部108並非限於渦電流感測器(亦即檢知在金屬表面感應之渦電流大小的感測器)者。只要是可測定鍍覆膜之膜厚者,可利用任何方式之膜厚測定器。例如,膜厚測定部108可使用電磁感應式膜厚測定器(將磁性體靠近勵磁線圈之前端時,利用勵磁線圈產生對吸引磁性體之反作用(電磁感應),並利用檢知線圈之電壓對膜厚少許變化的變化之膜厚測定器)、或電阻式膜厚測定器(使4個測定端子接觸於金屬表面,從外側2個端子流入電流,同時測定內側2個端子間之電壓下降程度的膜厚測定器)、或磁性式膜厚測定器(利用霍爾效應之膜厚測定器)。The film thickness measurement unit 108 is not limited to an eddy current sensor (that is, a sensor that detects the magnitude of an eddy current induced on a metal surface). As long as the thickness of the plated film can be measured, a film thickness measuring device of any method can be used. For example, the film thickness measuring unit 108 may use an electromagnetic induction type film thickness measuring device (when a magnetic body is brought close to the front end of the exciting coil, the exciting coil generates a reaction (electromagnetic induction) against the attracted magnetic body) Film thickness measuring device with a small change in voltage to film thickness) or resistive film thickness measuring device (contacting four measurement terminals to a metal surface, flowing current from the two outer terminals, and measuring the voltage between the two inner terminals simultaneously Film thickness measuring device for degree of decrease), or magnetic film thickness measuring device (film thickness measuring device using Hall effect).
本實施形態之基板W1具有抗蝕層,膜厚測定部108測定具有抗蝕層之基板W1的鍍覆膜膜厚。但是,基板W1亦可不具抗蝕層。基板W1具有抗蝕層時,測定膜厚之結果,因為鍍覆膜之膜厚薄、及/或膜厚不均勻而不合格時,無須再度在基板上塗布抗蝕層即可再度鍍覆。此外,還可不廢棄判定不合格之該基板而再度進行鍍覆。因而成本降低。The substrate W1 of the present embodiment has a resist layer, and the film thickness measurement unit 108 measures the plating film thickness of the substrate W1 having a resist layer. However, the substrate W1 may not have a resist. When the substrate W1 has a resist layer, the film thickness is measured. If the thickness of the plating film is thin and / or the film thickness is not uniform, the coating can be performed again without coating the resist layer on the substrate again. In addition, it is also possible to perform plating again without discarding the substrate determined to be unacceptable. As a result, costs are reduced.
第十二圖中之膜厚測定部108係4個,不過亦可僅有膜厚測定部108a與膜厚測定部108b之2個膜厚測定部108。此時,利用藉由水平搬送機構102在X方向搬送基板W1,可藉由2個膜厚測定部108a與膜厚測定部108b測定整體基板W1之膜厚。There are four film thickness measurement sections 108 in the twelfth figure, but there may be only two film thickness measurement sections 108 of the film thickness measurement section 108a and the film thickness measurement section 108b. At this time, by transporting the substrate W1 in the X direction by the horizontal transport mechanism 102, the film thickness of the entire substrate W1 can be measured by the two film thickness measurement sections 108a and the film thickness measurement section 108b.
亦可並無第十二圖所示之感測器支撐板122。此時,可經由除了氣缸118之外的另外氣缸將膜厚測定部108與感測器驅動部130直接安裝於上部機架128。除氣缸118之外的另外氣缸係為了使膜厚測定部108與感測器驅動部130在上下方向移動者。另外,不需要使膜厚測定部108在水平方向移動時,則不需要感測器驅動部130。The sensor support plate 122 shown in FIG. 12 may not be provided. At this time, the film thickness measuring section 108 and the sensor driving section 130 may be directly mounted on the upper frame 128 via a cylinder other than the cylinder 118. The cylinders other than the cylinder 118 move the film thickness measurement unit 108 and the sensor driving unit 130 in the vertical direction. When it is not necessary to move the film thickness measurement unit 108 in the horizontal direction, the sensor driving unit 130 is not required.
在洗淨基板W1之洗淨裝置50中洗淨基板W1的洗淨方法進行如下。將基板W1從入口51投入洗淨裝置50。在水平搬送機構56上搭載基板W1之狀態下,將基板W1搬送至處理區域82。在處理區域82洗淨及乾燥基板W1。然後,在第二搬送路徑54之水平搬送機構102上搭載基板W1並搬送至出口55。藉由移動機構106使加壓部104朝向水平搬送機構102移動。並藉由加壓部104將基板W1施壓於水平搬送機構102來矯正基板W1的翹曲。在基板W1施壓於水平搬送機構102的狀態下,使用膜厚測定部108測定基板W1之鍍覆膜的膜厚。測定後從出口55搬出基板W1。The cleaning method for cleaning the substrate W1 in the cleaning device 50 for cleaning the substrate W1 is performed as follows. The substrate W1 is put into the cleaning device 50 from the inlet 51. With the substrate W1 mounted on the horizontal transfer mechanism 56, the substrate W1 is transferred to the processing area 82. The substrate W1 is washed and dried in the processing area 82. Then, the substrate W1 is mounted on the horizontal transfer mechanism 102 of the second transfer path 54 and is transferred to the exit 55. The pressing unit 104 is moved toward the horizontal conveyance mechanism 102 by the moving mechanism 106. The substrate W1 is pressed by the pressing portion 104 to the horizontal transfer mechanism 102 to correct the warpage of the substrate W1. In a state where the substrate W1 is pressed to the horizontal transfer mechanism 102, the film thickness of the plated film of the substrate W1 is measured using the film thickness measurement unit 108. The substrate W1 is carried out from the outlet 55 after the measurement.
以上,係說明本發明實施形態之例,不過上述發明之實施形態係為了容易理解本發明者,而並非限定本發明者。本發明在不脫離其旨趣範圍內可進行變更及改良,並且本發明當然包含其等效物。此外,在可解決上述問題之至少一部分的範圍、或是可達到效果之至少一部分的範圍內,申請專利範圍及說明書中記載之各元件可任意組合或是省略。The above description is an example of the embodiment of the present invention, but the embodiment of the invention described above is for the purpose of easy understanding of the inventor, and is not intended to limit the present inventor. The present invention can be changed and improved without departing from the scope of the invention, and the present invention naturally includes equivalents thereof. In addition, within the range that can solve at least a part of the above problems, or that can achieve at least a part of the effect, each element described in the scope of the patent application and the specification can be arbitrarily combined or omitted.
25‧‧‧匣盒台25‧‧‧Box Box
25a‧‧‧匣盒 25a‧‧‧Box
27‧‧‧基板搬送裝置 27‧‧‧ substrate transfer device
28‧‧‧行駛機構 28‧‧‧ Driving mechanism
29‧‧‧基板裝卸機構 29‧‧‧ substrate loading and unloading mechanism
30‧‧‧自動倉儲 30‧‧‧ Automatic Storage
32‧‧‧預濕槽 32‧‧‧Pre-wet tank
33‧‧‧預浸槽 33‧‧‧ prepreg tank
34‧‧‧預沖洗槽 34‧‧‧Pre-rinsing tank
35‧‧‧噴吹槽 35‧‧‧Blowing trough
36‧‧‧沖洗槽 36‧‧‧Flushing tank
37‧‧‧基板固持器搬送裝置 37‧‧‧ substrate holder transfer device
38‧‧‧溢流槽 38‧‧‧ overflow tank
39‧‧‧鍍覆槽 39‧‧‧plating tank
50‧‧‧洗淨裝置 50‧‧‧washing device
50a‧‧‧洗淨部 50a‧‧‧washing department
51‧‧‧入口 51‧‧‧Entrance
51a‧‧‧入口閘門 51a‧‧‧ entrance gate
52‧‧‧第一搬送路徑 52‧‧‧The first conveying path
53‧‧‧鉛直搬送路徑 53‧‧‧Vertical transport route
54‧‧‧第二搬送路徑 54‧‧‧Second transfer route
55‧‧‧出口 55‧‧‧Export
55a‧‧‧出口閘門 55a‧‧‧Exit gate
56‧‧‧水平搬送機構 56‧‧‧Horizontal Transfer Agency
57‧‧‧洗淨單元 57‧‧‧washing unit
57a‧‧‧第一洗淨單元 57a‧‧‧first washing unit
57b‧‧‧第二洗淨單元 57b‧‧‧Second washing unit
58‧‧‧乾燥單元 58‧‧‧ drying unit
59‧‧‧DIW供給管線 59‧‧‧DIW supply pipeline
59a‧‧‧過濾器 59a‧‧‧filter
59b‧‧‧流量計 59b‧‧‧flow meter
60‧‧‧氣體供給管線 60‧‧‧Gas supply line
60a‧‧‧過濾器 60a‧‧‧filter
61‧‧‧鉛直搬送機構 61‧‧‧Vertical Transfer Agency
62‧‧‧送風單元 62‧‧‧Air supply unit
70‧‧‧加壓輥 70‧‧‧Pressure roller
72‧‧‧輥移動機構 72‧‧‧ roller moving mechanism
76‧‧‧狹縫 76‧‧‧Slit
78‧‧‧上部 78‧‧‧upper
80‧‧‧機架 80‧‧‧ rack
82‧‧‧處理區域 82‧‧‧Treatment area
84‧‧‧旋轉軸 84‧‧‧rotation axis
86‧‧‧開口部 86‧‧‧ opening
88‧‧‧驅動機構 88‧‧‧Drive mechanism
90‧‧‧引導部 90‧‧‧Guide
92‧‧‧軸 92‧‧‧axis
94‧‧‧花鍵 94‧‧‧Spline
100‧‧‧鍍覆裝置 100‧‧‧ plating equipment
102‧‧‧水平搬送機構 102‧‧‧Horizontal Transfer Agency
104‧‧‧加壓部 104‧‧‧Pressure section
106‧‧‧移動機構 106‧‧‧ Mobile agency
108‧‧‧膜厚測定部 108‧‧‧ Film thickness measurement section
110‧‧‧裝載/卸載部 110‧‧‧Loading / unloading department
112‧‧‧翹曲之尺寸 112‧‧‧Warped size
114‧‧‧輥子 114‧‧‧ roller
116‧‧‧旋轉軸 116‧‧‧rotation axis
118‧‧‧氣缸 118‧‧‧ cylinder
120‧‧‧處理部 120‧‧‧ Processing Department
120A‧‧‧前處理‧後處理部 120A‧‧‧Pre-processing‧Post-processing department
120B‧‧‧鍍覆處理部 120B‧‧‧Plating Treatment Department
122‧‧‧感測器支撐板 122‧‧‧Sensor support plate
124‧‧‧軸 124‧‧‧axis
128‧‧‧上部機架 128‧‧‧ Upper Rack
130‧‧‧感測器驅動部 130‧‧‧Sensor drive unit
134‧‧‧箭頭 134‧‧‧arrow
W1‧‧‧基板 W1‧‧‧ substrate
第一圖係具備本實施形態之洗淨裝置的鍍覆裝置之整體配置圖。The first figure is an overall layout diagram of a plating apparatus provided with the cleaning apparatus of this embodiment.
第二圖係洗淨裝置之概略側剖面圖。 The second figure is a schematic side sectional view of the cleaning device.
第三圖係說明加壓輥不存在時產生之問題圖。 The third diagram is a diagram illustrating a problem that occurs when a pressure roller is not present.
第四圖係說明加壓輥不存在時產生之問題圖。 The fourth diagram is a diagram illustrating a problem that occurs when a pressure roller is not present.
第五圖係顯示本實施形態之加壓輥與輥移動機構的前視圖。 The fifth figure is a front view showing a pressure roller and a roller moving mechanism according to this embodiment.
第六圖係顯示本實施形態之加壓輥與輥移動機構的前視圖。 The sixth figure is a front view showing a pressure roller and a roller moving mechanism according to this embodiment.
第七圖係本實施形態之加壓輥與輥移動機構的俯視圖。 The seventh figure is a plan view of a pressure roller and a roller moving mechanism according to this embodiment.
第八圖係引導部之概略側剖面圖。 The eighth figure is a schematic side sectional view of the guide portion.
第九圖係其他實施形態之洗淨裝置的概略側剖面圖。 The ninth figure is a schematic side sectional view of a cleaning device according to another embodiment.
第十圖係說明加壓部不存在時產生之問題圖。 The tenth figure is a diagram illustrating a problem that occurs when the pressurizing portion does not exist.
第十一圖係顯示其他實施形態之加壓部與移動機構與膜厚測定部的前視圖。 The eleventh figure is a front view showing a pressurizing section, a moving mechanism, and a film thickness measuring section of another embodiment.
第十二圖係顯示從第十一圖之AA方向觀看的俯視圖。 The twelfth figure is a plan view as viewed from the direction AA of the eleventh figure.
第十三圖係引導部之概略側剖面圖。 The thirteenth figure is a schematic side sectional view of the guide portion.
Claims (15)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018-060350 | 2018-03-27 | ||
JP2018060350A JP7257742B2 (en) | 2018-03-27 | 2018-03-27 | CLEANING APPARATUS, PLATING APPARATUS INCLUDING THE SAME, AND CLEANING METHOD |
JP2018060348A JP2019175933A (en) | 2018-03-27 | 2018-03-27 | Cleaning apparatus, plating apparatus including the same, and cleaning method |
JP2018-060348 | 2018-03-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201943004A true TW201943004A (en) | 2019-11-01 |
TWI799548B TWI799548B (en) | 2023-04-21 |
Family
ID=68056857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108109893A TWI799548B (en) | 2018-03-27 | 2019-03-22 | Cleaning device, plating device including the same, and cleaning method |
Country Status (3)
Country | Link |
---|---|
US (1) | US20190301044A1 (en) |
KR (1) | KR102656981B1 (en) |
TW (1) | TWI799548B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI788210B (en) * | 2021-02-04 | 2022-12-21 | 日商芝浦機械電子裝置股份有限公司 | Substrate processing equipment |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7074937B1 (en) * | 2021-06-04 | 2022-05-24 | 株式会社荏原製作所 | Plating equipment |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6203582B1 (en) * | 1996-07-15 | 2001-03-20 | Semitool, Inc. | Modular semiconductor workpiece processing tool |
JP3275202B2 (en) * | 1996-08-30 | 2002-04-15 | 東京エレクトロン株式会社 | Thin film forming equipment |
JP3960087B2 (en) * | 2001-05-30 | 2007-08-15 | 東京エレクトロン株式会社 | Transport device |
JP4846201B2 (en) | 2004-02-26 | 2011-12-28 | 株式会社荏原製作所 | Plating apparatus and plating method |
US20060141157A1 (en) * | 2003-05-27 | 2006-06-29 | Masahiko Sekimoto | Plating apparatus and plating method |
JP5260370B2 (en) * | 2009-03-19 | 2013-08-14 | 住友精密工業株式会社 | Substrate processing equipment |
JP5441515B2 (en) * | 2009-06-24 | 2014-03-12 | 上村工業株式会社 | Work transfer method and jig for surface treatment tank |
TWI589620B (en) * | 2016-05-17 | 2017-07-01 | 博祥國際股份有限公司 | Method of producting copolyester material with peptide and copolyester material with peptide thereof |
JP6157694B1 (en) | 2016-06-28 | 2017-07-05 | 株式会社荏原製作所 | Cleaning apparatus, plating apparatus including the same, and cleaning method |
TWI629116B (en) * | 2016-06-28 | 2018-07-11 | 荏原製作所股份有限公司 | Cleaning apparatus, plating apparatus using the same, and cleaning method |
JP6756540B2 (en) * | 2016-08-08 | 2020-09-16 | 株式会社荏原製作所 | A storage medium containing a plating device, a control method for the plating device, and a program for causing a computer to execute the control method for the plating device. |
-
2019
- 2019-03-05 KR KR1020190025134A patent/KR102656981B1/en active Active
- 2019-03-20 US US16/359,365 patent/US20190301044A1/en not_active Abandoned
- 2019-03-22 TW TW108109893A patent/TWI799548B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI788210B (en) * | 2021-02-04 | 2022-12-21 | 日商芝浦機械電子裝置股份有限公司 | Substrate processing equipment |
Also Published As
Publication number | Publication date |
---|---|
US20190301044A1 (en) | 2019-10-03 |
TWI799548B (en) | 2023-04-21 |
KR102656981B1 (en) | 2024-04-11 |
KR20190113566A (en) | 2019-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10781530B2 (en) | Cleaning apparatus, plating apparatus using the same, and cleaning method | |
US10851468B2 (en) | Substrate processing apparatus and substrate processing method | |
JP7257742B2 (en) | CLEANING APPARATUS, PLATING APPARATUS INCLUDING THE SAME, AND CLEANING METHOD | |
JP6157694B1 (en) | Cleaning apparatus, plating apparatus including the same, and cleaning method | |
JP5740583B2 (en) | Peeling apparatus, peeling system, peeling method, program, and computer storage medium | |
KR100367963B1 (en) | Coating apparatus for semiconductor process | |
WO2012121045A1 (en) | Joining method, joining device, and joining system | |
JP5740550B2 (en) | Peeling apparatus, peeling system, peeling method, program, and computer storage medium | |
KR20100042587A (en) | Substrate transportation and processing apparatus | |
KR20080068581A (en) | Board Carrier | |
WO2012140988A1 (en) | Separation method, separation device, and separation system | |
JP2013033925A (en) | Cleaning method, program, computer storage medium, cleaning device, and peeling system | |
KR20120090018A (en) | Decompression drier | |
TW201943004A (en) | Cleaning device, plating device including the same, and cleaning method | |
JP5913053B2 (en) | Peeling apparatus, peeling system, peeling method, program, and computer storage medium | |
JP2001232250A (en) | Membrane forming apparatus | |
WO2012093610A1 (en) | Peeling system, peeling method, and computer storage medium | |
JP2011205004A (en) | Substrate processing apparatus and substrate processing method | |
WO2023238572A1 (en) | Plating apparatus and plating method | |
JP2008288447A (en) | Substrate treating apparatus | |
JP3948325B2 (en) | Film substrate processing method | |
JP2022077220A (en) | Cleaning module and wafer processing device | |
JP2019175933A (en) | Cleaning apparatus, plating apparatus including the same, and cleaning method | |
JP6088099B1 (en) | Cleaning apparatus, plating apparatus including the same, and cleaning method | |
TW201820520A (en) | Treatment device, plating apparatus equipped with same, conveying device, and treatment method |