TWI785478B - Fingerprint sensing device - Google Patents

Abstract

A fingerprint sensing device has a sensing area, an operation area and a peripheral area, in which the operation area is disposed between the sensing area and the peripheral area. The fingerprint sensing device includes a substrate, a sensing element, an operation element, a first signal line, a first planarization layer, a first insulating layer and a first shading layer. The sensing element is disposed at the sensing area. The operation element is disposed at the operation area. The first signal line is disposed at the peripheral area. The first planarization layer is disposed on the substrate and has a first trench, which is overlapped with the first signal line. The first insulating layer is disposed on the first planarization layer and in the first trench. The first insulating layer has a first opening, which is located in the first trench. The first shading layer is disposed on the first insulating layer and connected with the first signal line through the first opening.

Description

Fingerprint Sensing Device

The present invention relates to a fingerprint sensing device, and in particular to a fingerprint sensing device capable of preventing moisture and resisting Electrostatic Discharge (ESD).

The fingerprint recognition function can support a variety of applications, enhance user experience and increase added value, and is currently one of the key development projects in the industry. In order to improve fingerprint recognition, in existing fingerprint sensing devices, organic materials need to be stacked with sufficient thickness to facilitate the focusing of microlenses and collimation of light, in order to obtain clearer fingerprint images. However, the organic material itself has high moisture absorption characteristics, which will increase the risk of corrosion to the wires, and even cause abnormal operation of the fingerprint sensing device.

In addition, the existing fingerprint sensing device has a single-board circuit structure without a metal frame, so it still lacks an anti-ESD protection structure.

The invention provides a fingerprint sensing device which can prevent moisture and resist ESD.

An embodiment of the present invention provides a fingerprint sensing device, which has a sensing area, an operating area and a peripheral area, wherein the operating area is located between the sensing area and the peripheral area. The fingerprint sensing device includes: a substrate; a sensing element, located in the sensing area; an operating element, located in the operating area; a first signal line, located in the peripheral area; a first flat layer, located on the substrate, and has a first groove, wherein The first trench overlaps the first signal line; the first insulating layer is located on the first planar layer and in the first trench, and has a first opening, wherein the first opening is located in the first trench; and a first light-shielding layer , located on the first insulating layer, and connected to the first signal line through the first opening.

In an embodiment of the present invention, the above-mentioned operating element includes a driving element and a testing element.

In an embodiment of the present invention, the above-mentioned first planar layer includes organic materials.

In an embodiment of the present invention, the above-mentioned first insulating layer includes inorganic materials.

In an embodiment of the present invention, the above-mentioned first opening overlaps the first signal line.

In an embodiment of the present invention, the aforementioned metal layer includes an aluminum layer, a molybdenum layer, a titanium layer or a combination thereof.

In an embodiment of the present invention, the above-mentioned first signal line is a ground line or a DC power line.

In an embodiment of the present invention, the above-mentioned first flat layer further has a second groove, and the second groove is located between the first groove and the operating element; the first insulating layer also has a second opening, and the second opening located in the second groove; and the first light shielding layer located in the second opening.

In an embodiment of the present invention, the above-mentioned fingerprint sensing device further includes a third flat layer, a second insulating layer, and a second light-shielding layer in sequence on the first light-shielding layer, wherein: the third flat layer has a third groove groove, the third groove overlaps the first groove; the second insulating layer has a third opening, and the third opening is located in the third groove; and the second light-shielding layer is connected to the first light-shielding layer through the third opening.

In an embodiment of the present invention, the above-mentioned first flat layer further has a second groove, the second groove is located between the first groove and the operating element, the first insulating layer further has a second opening, and the second opening It is located in the second groove, and the first light shielding layer is located in the second opening.

In an embodiment of the present invention, the above-mentioned fingerprint sensing device further includes a fourth planar layer, a third insulating layer, a fifth planar layer, a fourth insulating layer, a third light-shielding layer and The microlens structure, wherein: the fourth flat layer, the third insulating layer and the fifth flat layer have a fourth groove, and the fourth groove overlaps the third groove; the fourth insulating layer has a fourth opening, and the fourth opening is located on the first In the four grooves; and the third light-shielding layer is connected to the second light-shielding layer through the fourth opening.

In an embodiment of the present invention, the above-mentioned third light shielding layer has a third through hole, and the microlens structure is disposed in the third through hole.

In an embodiment of the present invention, the above-mentioned third light-shielding layer includes a metal layer and a transparent oxide layer.

In an embodiment of the present invention, the above-mentioned fingerprint sensing device further includes a second signal line, and further includes a third flat layer, a second insulating layer, and a second light-shielding layer in sequence on the first light-shielding layer, wherein : the first signal line is located between the second signal line and the operating element; the first flat layer also has a fifth groove, and the fifth groove overlaps the second signal line; the first insulating layer also has a fifth opening, and the fifth opening located in the fifth groove; the third planar layer has a sixth groove, the sixth groove overlaps the fifth groove; the second insulating layer has a sixth opening, and the sixth opening is located in the fifth opening; and the second light-shielding layer The second signal line is connected through the sixth opening.

In an embodiment of the present invention, the above-mentioned first light-shielding layer includes a metal layer and a transparent oxide layer.

In an embodiment of the present invention, the above-mentioned second light-shielding layer includes a metal layer and a transparent oxide layer.

In an embodiment of the present invention, the above-mentioned second signal line is a ground line or a DC power line.

In an embodiment of the present invention, the above-mentioned fingerprint sensing device is suitable for a display device, wherein the sensing element is located between the display device and the substrate.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

FIG. 1A is a schematic top view of a fingerprint sensing device 100 according to an embodiment of the present invention. FIG. 1B is an enlarged schematic view of area I of the sensing area SA of the fingerprint sensing device 100 in FIG. 1A . Fig. 1C is a schematic cross-sectional view taken along the section line A-A' of Fig. 1B. FIG. 1D is an enlarged schematic view of the area II of the peripheral area PA of the fingerprint sensing device 100 in FIG. 1A . Fig. 1E is a schematic cross-sectional view taken along the section line B-B' of Fig. 1A. Fig. 1F is a schematic cross-sectional view taken along the section line C-C' of Fig. 1A. In order to make the drawing more concise, FIG. 1A omits the first planar layer PL1 , the second planar layer PL2 and the first light shielding layer BM1 .

In the following, please refer to FIG. 1A to FIG. 1F to clearly understand the overall structure of the fingerprint sensing device 100 . The fingerprint sensing device 100 has a sensing area SA, an operating area MA and a peripheral area PA, wherein the operating area MA is located between the sensing area SA and the peripheral area PA. The fingerprint sensing device 100 includes a substrate 110 , a sensing element 120 , an operating element 130 , a first signal line SL1 , a first planar layer PL1 , a first insulating layer BP1 and a first light-shielding layer BM1 . The sensing element 120 is located on the substrate 110 and located in the sensing area SA. The operating element 130 is located on the substrate 110 and located in the operating area MA. The first signal line SL1 is located on the substrate 110 and located in the peripheral area PA. The first planar layer PL1 is located on the substrate 110 and has a first trench T1 , wherein the first trench T1 overlaps the first signal line SL1 . The first insulating layer BP1 is located on the first planar layer PL1 and in the first trench T1 , and has a first opening OP1 , wherein the first opening OP1 is located in the first trench T1 . The first light shielding layer BM1 is located on the first insulating layer BP1 and is connected to the first signal line SL1 through the first opening OP1.

Based on the above, in the fingerprint sensing device 100 according to an embodiment of the present invention, the first trench T1 is used to separate the first flat layer PL1, and the first insulating layer disposed on the top and sides of the first flat layer PL1 Layer BP1 is used to block water vapor, which can prevent the first flat layer PL1 from absorbing water vapor, thereby reducing the impact of water vapor on the operating element 130 . In addition, the connection of the first light-shielding layer BM1 to the first signal line SL1 can lead out static electricity, so as to provide anti-ESD protection for the fingerprint sensing device 100 .

Hereinafter, with reference to FIG. 1A to FIG. 1F , the implementation of each element and film layer of the fingerprint sensing device 100 will be described continuously, but the present invention is not limited thereto.

Referring to FIG. 1A , the substrate 110 can be a transparent substrate or a non-transparent substrate, and its material can be a quartz substrate, a glass substrate, a polymer substrate or other suitable materials, but the present invention is not limited thereto. Various film layers for forming, for example, signal lines, driving elements, testing elements, switching elements, storage capacitors, etc. can be disposed on the substrate 110 .

The operating area MA of the fingerprint sensing device 100 may be located around the sensing area SA. For example, in this embodiment, the operating area MA may surround the sensing area SA, but the invention is not limited thereto. In some embodiments, the operation area MA may be located at one side of the sensing area SA. An operating element 130 is mainly disposed in the operating area MA, and the operating element 130 may include driving elements 131 , 132 and a testing element 133 , but the present invention is not limited thereto. For example, in this embodiment, the driving elements 131, 132 may respectively include a gate driving circuit (Gate on Array), and the testing element 133 may include a testing circuit for testing such as the sensing element 120, for example, the testing element 133 may include a test circuit composed of a plurality of thin film transistors.

The peripheral area PA of the fingerprint sensing device 100 may be located at the periphery of the operating area MA. For example, in this embodiment, the operating area MA surrounds the sensing area SA, and the peripheral area PA surrounds the operating area MA, but the invention is not limited thereto. In some embodiments, the operating area MA is only located on one side of the sensing area SA, and the peripheral area PA may surround the sensing area SA and the operating area MA. The peripheral area PA may contain a wafer bonding area IC, which may be used, for example, to place a wafer.

Please refer to FIG. 1B and FIG. 1C at the same time, the sensing area SA of the fingerprint sensing device 100 is the main sensing area of the fingerprint sensing device 100 , and a plurality of sensing elements 120 may be disposed in the sensing area SA. For example, in this embodiment, the sensing element 120 may include a first electrode 121 , a sensing layer 122 and a second electrode 123 .

In some embodiments, the first electrode 121 may be located on the substrate 110 . In some embodiments, for example, a switching element electrically connected to the first electrode 121 and other insulating layers may be disposed between the first electrode 121 and the substrate 110 . The material of the first electrode 121 is, for example, molybdenum, aluminum, titanium, copper, gold, silver or other conductive materials or a stack of two or more of the above materials. In some embodiments, the sensing layer 122 is disposed on the first electrode 121 . The material of the sensing layer 122 is, for example, silicon-rich oxide (SRO) or other suitable materials. In some embodiments, the second electrode 123 is located on the sensing layer 122 such that the sensing layer 122 is sandwiched between the first electrode 121 and the second electrode 123 . The material of the second electrode 123 is preferably a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide or other suitable oxides or at least the above-mentioned Stacked layers of both.

In this embodiment, the first flat layer PL1 is located between the first electrode 121 and the second electrode 123, and the fingerprint sensing device 100 may further include a second flat layer PL2, and the second flat layer PL2 may cover the second electrode 123 , but the present invention is not limited thereto. In some embodiments, the first flat layer PL1 has a plurality of holes TH, and the second electrode 123 is conformally formed on the first flat layer PL1, so that the second electrode 123 is formed with a plurality of recesses ST accordingly. . For example, the material of the first flat layer PL1 and the second flat layer PL2 may include organic materials, such as acrylic materials, siloxane materials, polyimide materials, epoxy Resin (epoxy) material or a laminate of the above materials, but the present invention is not limited thereto.

In this embodiment, the first insulating layer BP1 is located between the second planar layer PL2 and the first light shielding layer BM1. In the sensing area SA, the first light shielding layer BM1 may have a plurality of through holes V1 , and the plurality of through holes V1 respectively overlap the plurality of recesses ST of the second electrode 123 of the sensing element 120 . In this way, the sensing element 120 can receive the light passing through the through hole V1 for sensing.

Please refer to FIG. 1A and FIG. 1D to FIG. 1F at the same time. In this embodiment, the first planar layer PL1, the second planar layer PL2, the first insulating layer BP1 and the first light-shielding layer BM1 can extend from the sensing area SA through the operation area MA, and extends to the surrounding area PA. The first planar layer PL1 and the second planar layer PL2 may have a first trench T1, and the first trench T1 is located in the peripheral area PA. In some embodiments, the orthographic projection of the first trench T1 on the substrate 110 falls within the orthographic projection of the first signal line SL1 on the substrate 110 .

The first insulating layer BP1 may extend into the first trench T1 and cover sidewalls of the first planar layer PL1 and the second planar layer PL2 . The first opening OP1 of the first insulating layer BP1 can overlap the first signal line SL1 to expose the first signal line SL1 , so that the first light shielding layer BM1 can be connected to the first signal line SL1 through the first opening OP1 . In this embodiment, the material of the first insulating layer BP1 may include inorganic materials, such as silicon oxide, silicon nitride, silicon oxynitride or a stack of the above materials, but the invention is not limited thereto.

In this embodiment, the first light shielding layer BM1 may include, for example, a metal layer and a transparent oxide layer, wherein the metal layer may be located between the first insulating layer BP1 and the transparent oxide layer, but the invention is not limited thereto. The material of the metal layer may include metals with good electrical conductivity, such as aluminum, molybdenum, titanium and other metals. In some embodiments, the above-mentioned metal layer may also have a single-layer structure or a multi-layer structure, such as a combination of an aluminum layer, a molybdenum layer, and a titanium layer, such as any two or more layers of an aluminum layer, a molybdenum layer, and a titanium layer The stacked layers can be combined and changed as required. For example, the above metal layer may include a sequentially stacked titanium layer, aluminum layer and titanium layer or a sequentially stacked molybdenum layer, aluminum layer and molybdenum layer, but the invention is not limited thereto. The material of the transparent oxide layer may include a transparent oxide with low reflectivity, such as molybdenum tantalum oxide (MoTaOx), but the invention is not limited thereto.

In this embodiment, the first signal line SL1 may be a ground line, but the invention is not limited thereto. In some embodiments, the first signal line SL1 may also be a DC power line with strong voltage, depending on actual design requirements. The material of the first signal line SL1 can be a metal or alloy with good electrical conductivity, such as gold, silver, copper, aluminum, titanium, molybdenum or a combination thereof, but the present invention is not limited thereto.

Hereinafter, another embodiment of the present invention will be described continuously. FIG. 2A is a schematic top view of a fingerprint sensing device 100A according to an embodiment of the present invention. Fig. 2B is a schematic cross-sectional view taken along the section line D-D' of Fig. 2A. Fig. 2C is a schematic cross-sectional view taken along the section line E-E' of Fig. 2A. In order to make the drawing more concise, FIG. 2A omits the first flat layer PL1 , the second flat layer PL2 and the first light shielding layer BM1 . In the following, with reference to FIG. 2A to FIG. 2C , the implementation of each component and film layer of the fingerprint sensing device 100A will be continued, and the component numbers and related contents used in the embodiment of FIG. 1A to FIG. 1F will be used, but the present invention does not This is the limit.

Compared with the fingerprint sensing device 100 shown in FIGS. 1A to 1F , the structure of the fingerprint sensing device 100A shown in FIGS. 2A to 2C is different in that: the first flat layer PL1 and the second flat layer PL2 also has a second trench T2 located between the first trench T1 and the operating element 130 . In addition, the first insulating layer BP1 has a first opening OP1 and a second opening OP2, the second opening OP2 is located in the second trench T2, and the first light shielding layer BM1 is located in the first opening OP1 and the second opening OP2.

In this embodiment, the first light shielding layer BM1 is connected to the first signal line SL1 through the first opening OP1 to provide anti-ESD protection for the fingerprint sensing device 100A. In addition, the second opening OP2 can expose the film layer below the first planar layer PL1, and the first light shielding layer BM1 can contact the film layer below the first planar layer PL1, so that the first insulating layer BP1 in the second trench T2 And the first light-shielding layer BM1 can prevent moisture from entering the first flat layer PL1 and the second flat layer PL2 . Since the first insulating layer BP1 and the first light-shielding layer BM1 in the second trench T2 can cover the first flat layer PL1 and the first flat layer PL1 next to the operating element 130 (including the driving elements 131, 132 and the testing element 133) at a closer distance. The second flat layer PL2, therefore, can prevent moisture from entering into the first flat layer PL1 and the second flat layer PL2 around the operating element 130 at a closer distance.

FIG. 3A is a schematic top view of a fingerprint sensing device 100B according to an embodiment of the present invention. FIG. 3B is an enlarged schematic diagram of area III of the sensing area SA of the fingerprint sensing device 100B in FIG. 3A . Fig. 3C is a schematic cross-sectional view taken along the section line F-F' of Fig. 3B. FIG. 3D is an enlarged schematic view of the area IV of the peripheral area PA of the fingerprint sensing device 100B of FIG. 3A . Fig. 3E is a schematic cross-sectional view taken along the section line G-G' of Fig. 3A. Fig. 3F is a schematic cross-sectional view taken along the section line H-H' of Fig. 3A. In order to simplify the drawing, FIG. 3A omits the first planar layer PL1 , the second planar layer PL2 , the first insulating layer BP1 , the first light shielding layer BM1 , the third planar layer PL3 and the second light shielding layer BM2 . In the following, with reference to FIG. 3A to FIG. 3F , the implementation of each component and film layer of the fingerprint sensing device 100B will be continued, and the component numbers and related contents used in the embodiment of FIG. 1A to FIG. 1F will be used, but the present invention does not This is the limit.

Compared with the fingerprint sensing device 100 shown in FIGS. 1A to 1F , the structure of the fingerprint sensing device 100B shown in FIGS. 3A to 3F is different in that: The BM1 further includes a third planar layer PL3 , a second insulating layer BP2 and a second light-shielding layer BM2 in sequence, wherein the third planar layer PL3 has a third trench T3 , and the third trench T3 overlaps the first trench T1 . The second insulating layer BP2 has a third opening OP3, and the third opening OP3 is located in the third trench T3. The second light shielding layer BM2 is connected to the first light shielding layer BM1 through the third opening OP3.

Please refer to FIG. 3A to FIG. 3C at the same time. In this embodiment, the second light shielding layer BM2 may have a plurality of through holes V2 in the sensing area SA, and the through holes V2 overlap the through holes V1 in the first light shielding layer BM1 respectively. In this way, the through hole V1 and the through hole V2 can adjust the light-receiving angle of the sensing element 120 , so that the sensing element 120 has a good fingerprint image quality, so that the fingerprint sensing device 100B has a good fingerprint recognition degree.

In this embodiment, the material of the second light-shielding layer BM2 may include light-shielding materials such as metal, black resin or graphite, or a stack of the above-mentioned light-shielding materials. For example, in some embodiments, the second light-shielding layer BM2 may include a stack of a metal layer and a transparent oxide layer, wherein the material of the metal layer may include metals with good electrical conductivity, such as aluminum, molybdenum, titanium and other metals or For the laminate, the material of the transparent oxide layer may include a transparent oxide with low reflectivity, such as molybdenum tantalum oxide (MoTaOx). In some embodiments, the second light shielding layer BM2 may include non-conductive materials such as black resin or graphite.

Please refer to FIG. 3A and FIG. 3D to FIG. 3F at the same time. In this embodiment, the third flat layer PL3 is located between the first light-shielding layer BM1 and the second insulating layer BP2, and the second insulating layer BP2 is located on the third flat layer PL3. and the second light-shielding layer BM2. The third planarization layer PL3, the second insulation layer BP2, and the second light shielding layer BM2 may extend from the sensing area SA through the operation area MA, and extend to the peripheral area PA. The material of the third flat layer PL3 may include organic materials, such as acrylic materials, siloxane materials, polyimide materials, epoxy materials or a combination of the above materials. layer, but the present invention is not limited thereto. The material of the second insulating layer BP2 may include inorganic materials, such as silicon oxide, silicon nitride, silicon oxynitride or a stack of the above materials, but the invention is not limited thereto.

In this embodiment, the second insulating layer BP2 may extend into the third trench T3 and completely cover the sidewall of the third planar layer PL3 to prevent moisture from entering the third planar layer PL3 . The third opening OP3 at least exposes a portion of the first light shielding layer BM1 in the first trench T1 so that the second light shielding layer BM2 contacts the first light shielding layer BM1 through the third opening OP3.

FIG. 4A is a schematic top view of a fingerprint sensing device 100C according to an embodiment of the present invention. Fig. 4B is a schematic cross-sectional view taken along the section line J-J' of Fig. 4A. Fig. 4C is a schematic cross-sectional view taken along the section line K-K' of Fig. 4A. In order to make the drawing more concise, FIG. 4A omits the first planar layer PL1 , the second planar layer PL2 , the first light shielding layer BM1 , the third planar layer PL3 and the second light shielding layer BM2 . In the following, with reference to FIG. 4A to FIG. 4C , the implementation of each component and film layer of the fingerprint sensing device 100C will be continued, and the component numbers and related contents used in the embodiment of FIG. 3A to FIG. 3F will be used, but the present invention does not This is the limit.

Compared with the fingerprint sensing device 100B shown in FIGS. 3A to 3F , the structure of the fingerprint sensing device 100C shown in FIGS. 4A to 4C is different in that: the first flat layer PL1 and the second flat layer PL2 also has a second trench T2 located between the first trench T1 and the operating element 130 . In addition, the first insulating layer BP1 also has a second opening OP2, the second opening OP2 is located in the second trench T2, and the first light shielding layer BM1 is located in the second opening OP2.

In this embodiment, the second trench T2 can separate the first planar layer PL1 and the second planar layer PL2 twice, and the first insulating layer BP1 and the first light-shielding layer BM1 in the second trench T2 can block moisture into the first planar layer PL1 and the second planar layer PL2. Since the first insulating layer BP1 and the first light-shielding layer BM1 in the second trench T2 can cover the first flat layer PL1 and the first flat layer PL1 next to the operating element 130 (including the driving elements 131, 132 and the testing element 133) at a closer distance. The second flat layer PL2, therefore, can reduce the effect of moisture on the operating element 130 at a closer distance.

FIG. 5A is a schematic top view of a fingerprint sensing device 100D according to an embodiment of the present invention. FIG. 5B is an enlarged schematic view of the area V of the sensing area SA of the fingerprint sensing device 100D in FIG. 5A . Fig. 5C is a schematic cross-sectional view taken along the section line L-L' of Fig. 5B. Fig. 5D is a schematic cross-sectional view taken along the section line M-M' of Fig. 5A. Fig. 5E is a schematic cross-sectional view taken along the section line N-N' of Fig. 5A. In order to make the expression of the drawings more concise, FIG. 5A omits the first planar layer PL1, the second planar layer PL2, the first insulating layer BP1, the first light-shielding layer BM1, the third planar layer PL3, the second insulating layer BP2, the The second light shielding layer BM2, the fourth planarization layer PL4, the third insulating layer BP3, the fifth planarization layer PL5, the third light shielding layer BM3 and the micro lens structure ML. In the following, with reference to FIG. 5A to FIG. 5E , the implementation of each component and film layer of the fingerprint sensing device 100D will be continued, and the component numbers and related contents used in the embodiment of FIG. 3A to FIG. 3F will be used, but the present invention does not This is the limit.

Compared with the fingerprint sensing device 100B shown in FIGS. 3A to 3F , the structure of the fingerprint sensing device 100D shown in FIGS. 5A to 5E is different in that: The layer BM2 also includes a fourth planar layer PL4, a third insulating layer BP3, a fifth planar layer PL5, a fourth insulating layer BP4, a third light-shielding layer BM3, and a microlens structure ML in sequence, wherein the fourth planar layer PL4, the The third insulating layer BP3 and the fifth planar layer PL5 have a fourth trench T4, and the fourth trench T4 overlaps the third trench T3. The fourth insulating layer BP4 has a fourth opening OP4 located in the fourth trench T4. The third light shielding layer BM3 is connected to the second light shielding layer BM2 through the fourth opening OP4.

Please refer to FIG. 5A to FIG. 5C at the same time. In this embodiment, the third light shielding layer BM3 may have a plurality of through holes V3 in the sensing area SA, and the through holes V3 respectively overlap the through holes V2 in the second light shielding layer BM2, and A microlens structure ML may be disposed in the via hole V3. The microlens structure ML may be a lens structure with a thicker center than an edge, such as a symmetrical bi-convex lens, an asymmetric bi-convex lens, a plano-convex lens or a concave-convex lens. The microlens structure ML can improve light collimation, reduce light leakage and light mixing caused by scattered light or refracted light, and improve image resolution. In this way, the light from the outside can first pass through the microlens structure ML, the through hole V2 and the through hole V1 to improve the collimation, and then enter the sensing element 120, so that the sensing element 120 can obtain a fingerprint image with good quality, thereby The fingerprint sensing device 100D has good fingerprint recognition.

In this embodiment, the material of the third light-shielding layer BM3 may include light-shielding materials such as metal, black resin or graphite, or a stack of the above-mentioned light-shielding materials. For example, in some embodiments, the third light-shielding layer BM3 may include a laminated layer of a metal layer and a transparent oxide layer, wherein the material of the metal layer may include a metal with good electrical conductivity, such as aluminum, molybdenum, titanium or other metals. For the laminate, the material of the transparent oxide layer may include a transparent oxide with low reflectivity, such as molybdenum tantalum oxide (MoTaOx). In some embodiments, the third light shielding layer BM3 may include non-conductive materials such as black resin or graphite.

Please refer to FIG. 5A and FIG. 5D to FIG. 5E at the same time. In this embodiment, the fourth flat layer PL4 is located between the second light-shielding layer BM2 and the third insulating layer BP3; and the third insulating layer BP3 is located between the fourth flat layer PL4 and the fifth planar layer PL5. In some embodiments, the fingerprint sensing device 100D may further include an infrared shielding layer IR, and the infrared shielding layer IR may be located between the third insulating layer BP3 and the fifth planar layer PL5. The fourth planar layer PL4 , the third insulating layer BP3 , the infrared shielding layer IR, and the fifth planar layer PL5 may extend from the sensing area SA through the operation area MA, and extend to the peripheral area PA.

The material of the fourth flat layer PL4 and the fifth flat layer PL5 may include organic materials, such as acrylic material, siloxane material, polyimide material, epoxy resin (epoxy) materials or stacks of the above materials, but the invention is not limited thereto. The material of the third insulating layer BP3 and the fourth insulating layer BP4 may include inorganic materials, such as silicon oxide, silicon nitride, silicon oxynitride or a stack of the above materials, but the present invention is not limited thereto. The infrared shielding layer IR can block the infrared rays from entering, so as to avoid destroying the fingerprint image under strong light environment. The material of the infrared shielding layer IR includes, for example, green color resist.

In this embodiment, the fourth insulating layer BP4 may extend into the fourth trench T4, and completely cover the side walls of the fourth planar layer PL4, the third insulating layer BP3, the infrared shielding layer IR, and the fifth planar layer PL5, To prevent moisture from entering the fourth flat layer PL4 and the fifth flat layer PL5 . The fourth opening OP4 exposes at least a portion of the second light shielding layer BM2 in the third trench T3, so that the third light shielding layer BM3 contacts the second light shielding layer BM2 through the fourth opening OP4.

FIG. 6A is a schematic top view of a fingerprint sensing device 100E according to an embodiment of the present invention. Fig. 6B is a schematic cross-sectional view taken along the section line P-P' of Fig. 6A. Fig. 6C is a schematic cross-sectional view taken along the section line Q-Q' of Fig. 6A. In order to make the drawing more concise, FIG. 6A omits the first planar layer PL1 , the second planar layer PL2 , the first light shielding layer BM1 , the third planar layer PL3 and the second light shielding layer BM2 . In the following, with reference to FIG. 6A to FIG. 6C , the implementation of each component and film layer of the fingerprint sensing device 100E will be continued, and the component numbers and related contents used in the embodiment of FIG. 1A to FIG. 1F will be used, but the present invention does not This is the limit.

Compared with the fingerprint sensing device 100 shown in FIGS. 1A to 1F , the difference in the structure of the fingerprint sensing device 100E shown in FIGS. 6A to 6C is that the fingerprint sensing device 100E also includes a second signal line SL2 , and the fingerprint sensing device 100E further includes a third planar layer PL3 , a second insulating layer BP2 and a second light-shielding layer BM2 on the first light-shielding layer BM1 in sequence. The first signal line SL1 is located between the second signal line SL2 and the operating element 130 . The first planar layer PL1 and the second planar layer PL2 further have a fifth trench T5, and the fifth trench T5 overlaps the second signal line SL2. The first insulating layer BP1 also has a fifth opening OP5 located in the fifth trench T5. The third planarization layer PL3 has a sixth trench T6 overlapping the fifth trench T5. The second insulating layer BP2 has a sixth opening OP6, and the sixth opening OP6 is located in the fifth opening OP5. The second light shielding layer BM2 is connected to the second signal line SL2 through the sixth opening OP6.

In this embodiment, the material of the second light-shielding layer BM2 may include light-shielding materials such as metal, black resin or graphite, or a stack of the above-mentioned light-shielding materials. For example, in some embodiments, the second light-shielding layer BM2 may include a stack of a metal layer and a transparent oxide layer, wherein the material of the metal layer may include metals with good electrical conductivity, such as aluminum, molybdenum, titanium and other metals or For the laminate, the material of the transparent oxide layer may include a transparent oxide with low reflectivity, such as molybdenum tantalum oxide (MoTaOx). In some embodiments, the second light shielding layer BM2 may include non-conductive materials such as black resin or graphite.

In this embodiment, the second signal line SL2 may be a ground line, but the invention is not limited thereto. In some embodiments, the second signal line SL2 may also be a DC power line with strong voltage, depending on actual design requirements. The material of the second signal line SL2 can be a metal or alloy with good conductivity, such as gold, silver, copper, aluminum, titanium, molybdenum or a combination thereof, but the present invention is not limited thereto.

Please refer to FIG. 6A to FIG. 6C at the same time. In this embodiment, the first insulating layer BP1 can first extend into the first trench T1, and then extend into the fifth trench T5, that is, the first insulating layer BP1 The first flat layer PL1 and the second flat layer PL2 may be completely covered. In addition, the first light-shielding layer BM1 may extend to the first trench T1 to be connected to the first signal line SL1 instead of extending to the fifth trench T5.

In this embodiment, the third planar layer PL3 is located between the first light shielding layer BM1 and the second insulating layer BP2, and the second insulating layer BP2 is located between the third planar layer PL3 and the second light shielding layer BM2. The third planarization layer PL3, the second insulation layer BP2, and the second light shielding layer BM2 may extend from the sensing area SA through the operation area MA, and extend to the peripheral area PA. The material of the third flat layer PL3 may include organic materials, such as acrylic materials, siloxane materials, polyimide materials, epoxy materials or a combination of the above materials. layer, but the present invention is not limited thereto. The material of the second insulating layer BP2 may include inorganic materials, such as silicon oxide, silicon nitride, silicon oxynitride or a stack of the above materials, but the invention is not limited thereto.

The second insulating layer BP2 may extend into the sixth trench T6 and completely cover the sidewalls of the third planar layer PL3 to prevent moisture from entering the third planar layer PL3 . In some embodiments, the second insulating layer BP2 may also extend into the fifth opening OP5 along the upper surface of the first insulating layer BP1. In addition, the sixth opening OP6 of the second insulating layer BP2 can overlap the fifth opening OP5 to expose the second signal line SL2 , therefore, the second light shielding layer BM2 can connect to the second signal line SL2 through the sixth opening OP6 . When the second light-shielding layer BM2 is made of conductive material, the second light-shielding layer BM2 can conduct static electricity through the second signal line SL2 , so as to provide anti-ESD protection for the fingerprint sensing device 100E.

In this embodiment, at least one of the first light-shielding layer BM1 and the second light-shielding layer BM2 may include a stack of a metal layer and a transparent oxide layer, wherein the metal layer may be located on the first insulating layer BP1 or the second insulating layer BP2 between the transparent oxide layer. The material of the metal layer may include metals with good electrical conductivity, such as aluminum, molybdenum, titanium and other metals. In some embodiments, the above-mentioned metal layer may also have a single-layer structure or a multi-layer structure. The multi-layer structure, for example, a stack of any two or more layers of the above-mentioned conductive metal, may be combined and changed as required. For example, the above metal layer may include a sequentially stacked titanium layer, aluminum layer and titanium layer or a sequentially stacked molybdenum layer, aluminum layer and molybdenum layer, but the invention is not limited thereto. The material of the transparent oxide layer may include a transparent oxide with low reflectivity, such as molybdenum tantalum oxide (MoTaOx), but the invention is not limited thereto.

FIG. 7 is a schematic cross-sectional view of a display device 10 according to an embodiment of the present invention. In the following, the implementation of each component and film layer of the display device 10 will be described in conjunction with FIG. 7 , and the component numbers and related content used in the embodiment of FIG. 1A to FIG. 1F will be used, but the present invention is not limited thereto.

The display device 10 includes a fingerprint sensing device 100F and a display device 200 , wherein the fingerprint sensing device 100F is suitable for the display device 200 to provide the display device 10 with a fingerprint recognition function. The structure of the fingerprint sensing device 100F can be similar to the aforementioned fingerprint sensing devices 100 , 100A, 100B, 100C, 100D, and 100E. Therefore, the fingerprint sensing device 100F can have good moisture-proof and ESD-resistant functions.

In some embodiments, the fingerprint sensing device 100F can be disposed on the back side of the display device 200 , so that the sensing element 120 in the above embodiments can be located between the display device 200 and the substrate 110 , but the invention is not limited thereto. The display device 200 may include, for example, a pixel array substrate 210 and a cover substrate 220 , and the pixel array substrate 210 may be located between the fingerprint sensing device 100F and the cover substrate 220 .

In this embodiment, when the finger F approaches the cover substrate 220 , the light LR emitted from the pixel array substrate 210 may be reflected by the finger F to the sensing element 120 in the fingerprint sensing device 100F. Since the through hole V1, the through hole V2 or the microlens structure ML has a light collimating effect, the reflected light generated by the light LR reflected by the finger F can enter the sensing element 120 in a collimated manner, so that the sensing element 120 can sense Measure clear fingerprint peak/valley signals, so as to obtain good quality fingerprint images.

In summary, the fingerprint sensing device of the present invention uses grooves to separate the flat layer, and blocks water vapor through the organic material/inorganic material stack of the flat layer and the insulating layer, which can prevent the organic material from absorbing water vapor, thereby Avoid moisture affecting the properties of the operating elements. In addition, the light-shielding layer connected to the signal line can discharge static electricity, so as to provide anti-ESD protection for the fingerprint sensing device.

Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.

10:Display device 100, 100A, 100B, 100C, 100D, 100E, 100F: fingerprint sensing device 110: Substrate 120: sensing element 121: the first electrode 122: Sensing layer 123: second electrode 130: Operating elements 131: drive element 132: drive element 133: Test element 200: display device 210:Pixel array substrate 220: cover substrate A-A', BB', CC', D-D', E-E', F-F', G-G', H-H', J-J', K-K', L-L', M-M', N-N', P-P', Q-Q': hatching BM1: the first shading layer BM2: Second shading layer BM3: The third shading layer BP1: The first insulating layer BP2: Second insulating layer BP3: The third insulating layer BP4: The fourth insulating layer F: finger I, II, III, IV, V: Areas IC: Wafer Bonding Area IR: Infrared shielding layer LR: light MA: operating area ML: microlens structure OP1: first opening OP2: second opening OP3: the third opening OP4: fourth opening OP5: fifth opening OP6: sixth opening PA: Peripheral Area PL1: the first flat layer PL2: second flat layer PL3: third flat layer PL4: fourth flat layer PL5: fifth flat layer SA: sensing area SL1: the first signal line SL2: Second signal line ST: Concave T1: first groove T2: second groove T3: the third groove T4: fourth groove T5: fifth groove T6: sixth groove TH: hole V1, V2, V3: through holes

FIG. 1A is a schematic top view of a fingerprint sensing device 100 according to an embodiment of the present invention. FIG. 1B is an enlarged schematic view of area I of the sensing area SA of the fingerprint sensing device 100 in FIG. 1A . Fig. 1C is a schematic cross-sectional view taken along the section line A-A' of Fig. 1B. FIG. 1D is an enlarged schematic view of the area II of the peripheral area PA of the fingerprint sensing device 100 in FIG. 1A . Fig. 1E is a schematic cross-sectional view taken along the section line B-B' of Fig. 1A. Fig. 1F is a schematic cross-sectional view taken along the section line C-C' of Fig. 1A. FIG. 2A is a schematic top view of a fingerprint sensing device 100A according to an embodiment of the present invention. Fig. 2B is a schematic cross-sectional view taken along the section line D-D' of Fig. 2A. Fig. 2C is a schematic cross-sectional view taken along the section line E-E' of Fig. 2A. FIG. 3A is a schematic top view of a fingerprint sensing device 100B according to an embodiment of the present invention. FIG. 3B is an enlarged schematic diagram of area III of the sensing area SA of the fingerprint sensing device 100B in FIG. 3A . Fig. 3C is a schematic cross-sectional view taken along the section line F-F' of Fig. 3B. FIG. 3D is an enlarged schematic view of the area IV of the peripheral area PA of the fingerprint sensing device 100B of FIG. 3A . Fig. 3E is a schematic cross-sectional view taken along the section line G-G' of Fig. 3A. Fig. 3F is a schematic cross-sectional view taken along the section line H-H' of Fig. 3A. FIG. 4A is a schematic top view of a fingerprint sensing device 100C according to an embodiment of the present invention. Fig. 4B is a schematic cross-sectional view taken along the section line J-J' of Fig. 4A. Fig. 4C is a schematic cross-sectional view taken along the section line K-K' of Fig. 4A. FIG. 5A is a schematic top view of a fingerprint sensing device 100D according to an embodiment of the present invention. FIG. 5B is an enlarged schematic view of the area V of the sensing area SA of the fingerprint sensing device 100D in FIG. 5A . Fig. 5C is a schematic cross-sectional view taken along the section line L-L' of Fig. 5B. Fig. 5D is a schematic cross-sectional view taken along the section line M-M' of Fig. 5A. Fig. 5E is a schematic cross-sectional view taken along the section line N-N' of Fig. 5A. FIG. 6A is a schematic top view of a fingerprint sensing device 100E according to an embodiment of the present invention. Fig. 6B is a schematic cross-sectional view taken along the section line P-P' of Fig. 6A. Fig. 6C is a schematic cross-sectional view taken along the section line Q-Q' of Fig. 6A. FIG. 7 is a schematic cross-sectional view of a display device 10 according to an embodiment of the present invention.

100: Fingerprint sensing device

110: Substrate

120: sensing element

131: drive element

B-B': hatching

BM1: the first shading layer

BP1: The first insulating layer

MA: operating area

OP1: first opening

PA: Peripheral Area

PL1: the first flat layer

PL2: second flat layer

SA: sensing area

SL1: The first signal line

T1: first groove

V1: Through hole

Claims (21)

A fingerprint sensing device has a sensing area, an operating area and a peripheral area, wherein the operating area is located between the sensing area and the peripheral area, the fingerprint sensing device includes: a substrate; a sensing element, Located in the sensing area; an operating element located in the operating area; a first signal line located in the peripheral area; a first planar layer located on the substrate and having a first groove, wherein the first groove a groove overlaps the first signal line; a first insulating layer is located on the first planar layer and in the first trench, and has a first opening, wherein the first opening is located in the first trench; and A first light-shielding layer is located on the first insulating layer and connected to the first signal line through the first opening. The fingerprint sensing device as claimed in claim 1, wherein the operating element includes a driving element and a testing element. The fingerprint sensing device as claimed in claim 1, wherein the first planar layer comprises organic material. The fingerprint sensing device as claimed in claim 1, wherein the first insulating layer comprises an inorganic material. The fingerprint sensing device as claimed in claim 1, wherein the first opening overlaps the first signal line. The fingerprint sensing device as claimed in claim 1, wherein the first light-shielding layer includes a metal layer and a transparent oxide layer. The fingerprint sensing device as claimed in claim 6, wherein the metal layer includes an aluminum layer, a molybdenum layer, a titanium layer or a combination thereof. The fingerprint sensing device as claimed in claim 1, wherein the first signal line is a ground line or a DC power line. The fingerprint sensing device according to claim 1, wherein: the first flat layer further has a second groove, and the second groove is located between the first groove and the operating element; the first insulating layer There is also a second opening, the second opening is located in the second groove; and the first light shielding layer is located in the second opening. The fingerprint sensing device according to claim 1, further comprising a third planar layer, a second insulating layer, and a second light-shielding layer sequentially on the first light-shielding layer, wherein: the third planar layer has a third groove, the third groove overlaps the first groove; the second insulating layer has a third opening, and the third opening is located in the third groove; and the second light-shielding layer passes through the first The three openings are connected to the first light-shielding layer. The fingerprint sensing device as claimed in claim 10, wherein the second light-shielding layer includes a metal layer and a transparent oxide layer. The fingerprint sensing device as claimed in claim 10, wherein the first flat layer further has a second groove, the second groove is located between the first groove and the operating element, and the first insulating layer further There is a second opening, the second opening is located in the second groove, and the first light shielding layer is located in the second opening. The fingerprint sensing device according to claim 10, further comprising a fourth planar layer, a third insulating layer, a fifth planar layer, a fourth insulating layer, and a first insulating layer on the second light-shielding layer. Three light-shielding layers and a microlens structure, wherein: the fourth planar layer, the third insulating layer and the fifth planar layer have a fourth groove, and the fourth groove overlaps the third groove; the fourth The insulating layer has a fourth opening, the fourth opening is located in the fourth groove; and the third light shielding layer is connected to the second light shielding layer through the fourth opening. The fingerprint sensing device as claimed in claim 13, wherein the third light-shielding layer has a third through hole, and the microlens structure is disposed in the third through hole. The fingerprint sensing device as claimed in claim 13, wherein the third light-shielding layer includes a metal layer and a transparent oxide layer. The fingerprint sensing device according to claim 1, further comprising a second signal line, and sequentially comprising a third planar layer, a second insulating layer and a second light-shielding layer on the first light-shielding layer, Wherein: the first signal line is located between the second signal line and the operating element; the first flat layer also has a fifth groove, and the fifth groove overlaps the second signal line; The first insulating layer also has a fifth opening, and the fifth opening is located in the fifth groove; the third planar layer has a sixth groove, and the sixth groove overlaps the fifth groove; The second insulating layer has a sixth opening, and the sixth opening is located in the fifth opening; and the second light-shielding layer is connected to the second signal line through the sixth opening. The fingerprint sensing device as claimed in claim 16, wherein the first light-shielding layer includes a metal layer and a transparent oxide layer. The fingerprint sensing device as claimed in claim 16 or 17, wherein the second light-shielding layer includes a metal layer and a transparent oxide layer. The fingerprint sensing device as claimed in claim 16, wherein the second signal line is a ground line or a DC power line. The fingerprint sensing device as claimed in claim 1 is suitable for a display device, wherein the sensing element is located between the display device and the substrate. The fingerprint sensing device as claimed in claim 1, wherein the first light-shielding layer has a plurality of first through holes, and the plurality of first through holes completely overlap the sensing element.

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