TWI752498B - Laser module and laser die and manufacturing method thereof - Google Patents
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Abstract
Description
本發明係涉及光學領域,尤其係關於一種雷射模組及其雷射晶粒與雷射晶粒的製造方法。 The present invention relates to the field of optics, and in particular, to a laser module, a laser die and a manufacturing method of the laser die.
由於雷射光源有較大的光電轉換效率,且雷射光源所輸出之雷射光束具有能量高、波長一致、單一頻率以及準直性佳的光學特性,故雷射光源逐漸地被廣泛應用。請參閱圖1與圖2,圖1為習知雷射模組之部分結構的剖面概念示意圖,圖2為圖1所示雷射模組之部分結構的立體分解示意圖。習知的雷射模組1包括外殼體10、內殼體11、基板12、雷射晶粒13、反射光學元件15、準直光學元件16、繞射光學元件(diffractive optical element,DOE)17以及陶瓷板14,外殼體10用供繞射光學元件17設置於其上,而內殼體11以及雷射晶粒13設置於外殼體10的容置空間內,其中,內殼體11用以固定反射光學元件15以及準直光學元件16,
因此反射光學元件15以及準直光學元件16可透過內殼體11而連動。
Because the laser light source has high photoelectric conversion efficiency, and the laser beam output by the laser light source has the optical characteristics of high energy, consistent wavelength, single frequency and good collimation, the laser light source is gradually widely used. Please refer to FIG. 1 and FIG. 2 . FIG. 1 is a schematic cross-sectional conceptual diagram of a partial structure of a conventional laser module, and FIG. 2 is a perspective exploded schematic diagram of a partial structure of the laser module shown in FIG. 1 . The
再者,基板12用以承載雷射晶粒13、陶瓷板14、外殼體10以及內殼體11,且雷射晶粒13設置於陶瓷板14上以電性連接於基板12,當雷射晶粒13接收電力後,雷射晶粒13可提供複數雷射光束L1,且該些雷射光束L1會往反射光學元件15的方向行進,並於投射至反射光學元件15上後被反射光學元件15反射而朝準直光學元件16以及繞射光學元件17的方向行進。其中,準直光學元件16用以準直被反射光學元件15所反射而來的雷射光束L1,使通過準直光學元件16的雷射光束L1以較佳的入射方向入射至繞射光學元件17,而繞射光學元件17則用以對通過準直光學元件16的雷射光束L1進行光束整型並予以向外輸出。
Furthermore, the
接下來說明雷射模組1的組裝方法。雷射模組1的組封方法包括:步驟S11,將雷射晶粒13固定於陶瓷板14上;步驟S12,利用內殼體11固定反射光學元件15以及準直光學元件16,使反射光學元件15以及準直光學元件16相對準;步驟S13,透過移動並固定內殼體11而使內殼體11中的反射光學元件15對準雷射晶粒13;以及步驟S14,設置外殼體10於基板12上而使內殼體11被套設於其中,其中,繞射光學元件17可於外殼體10被固定後再被放置與固定於外殼體10上,亦可於外殼體10被固定前就先被放置與固定於外殼體10上。
Next, an assembling method of the
特別說明的是,基於上述的組裝方法,雷射晶粒13與反射光學元件15之間的相對位置關係以及反射光學元件15與準直光學元件16之間的相對位置關係皆可滿足以往業界對於定位
精度上的要求。而由於在以往雷射模組1的使用上,繞射光學元件17與準直光學元件16之間的相對位置關係所需滿足的定位精度較低,故於組裝雷射模組1的過程中,承載著繞射光學元件17的外殼體10僅需依據不會與基板12發生相對歪斜的原則而被固定,如此即可保持雷射模組1的外觀,進而有助於雷射模組1被安裝至電子裝置時不會與電子裝置中的相鄰元件或機構產生干涉。
It is particularly noted that, based on the above-mentioned assembling method, the relative positional relationship between the
然而,隨著電子工業的演進以及工業技術的蓬勃發展,各種電子裝置設計及開發朝著極為輕巧且易於攜帶的方向開發,因此習知雷射模組1的製造精度與組裝精度已無法滿足現行的需求。詳言之,習知雷射模組1具有下列缺點:(1)零件組成過多,除了增加組裝上的複雜度,亦成為提升組裝精度的屏障;(2)雷射晶粒13所輸出之雷射光束L1的光軸A11因製程上的極限而可能發生不平行於基板12的情形,又由於反射光學元件15大都是以其傾斜角度θ1為45度進行製造,故就算是在雷射模組1的組裝過程中使雷射晶粒13與反射光學元件15相對準也不能保證反射後之雷射光束L1的光軸A12垂直於準直光學元件16,此將導致雷射模組1的輸出具有不佳的光功率;(3)準直光學元件16以及繞射光學元件17皆受限於其是經由射出成型製成而導致製造公差在幾十微米(μm)以上;(4)基板12大都採用軟性電路板,不利雷射晶粒13的定位與安裝,且導致不佳的散熱效果,因此採用陶瓷材料的基板12被提出,而雖然採用陶瓷材料的基板12可提升雷射模組1的散熱能力,但卻產生容易破裂的問題。
However, with the evolution of the electronic industry and the vigorous development of industrial technology, the design and development of various electronic devices have been developed in the direction of being extremely lightweight and easy to carry. Therefore, the manufacturing accuracy and assembly accuracy of the
根據以上的說明,習知的雷射模組具有改善的空間。 According to the above description, the conventional laser module has room for improvement.
本發明之一第一目的在提供一種利用導線架承載雷射晶粒與光學鏡片的雷射模組。 One of the first objectives of the present invention is to provide a laser module that utilizes a lead frame to carry laser chips and optical lenses.
本發明之一第二目的在提供一種具有邊射型雷射單元以及反射單元的雷射晶粒。 A second object of the present invention is to provide a laser die having an edge-emitting laser unit and a reflection unit.
本發明之一第三目的在提供一種具有邊射型雷射單元以及反射單元的雷射晶粒的製造方法。 A third object of the present invention is to provide a method for manufacturing a laser die having an edge-emitting laser unit and a reflection unit.
本發明之一第四目的在提供一種基於主動式對準(Active Alignment)的雷射模組的製造方法。 A fourth object of the present invention is to provide a manufacturing method of a laser module based on Active Alignment.
於一較佳實施例中,本發明提供一種雷射模組,包括:一雷射晶粒,用以輸出一雷射光束;至少一光學鏡片,用以供該雷射光束通過而向外投射;以及一導線架(lead frame),包括一基板以及一框架,且該框架連接於該基板並具有至少一對位結構;其中,該雷射晶粒電連接於該基板上,且該至少一光學鏡片經由該至少一對位結構而安裝於該框架上。 In a preferred embodiment, the present invention provides a laser module, comprising: a laser die for outputting a laser beam; at least one optical lens for allowing the laser beam to pass through and project outwards ; And a lead frame, comprising a substrate and a frame, and the frame is connected to the substrate and has at least one alignment structure; wherein, the laser die is electrically connected to the substrate, and the at least one The optical lens is mounted on the frame through the at least one pair of alignment structures.
於一較佳實施例中,該框架包括複數壁體,且該些壁體之內側表面分別具有至少一階梯結構,而該些階梯結構共同形成具有至少一容置空間之該至少一對位結構;其中,該至少一容置空間用以容置該至少一光學鏡片。 In a preferred embodiment, the frame includes a plurality of walls, and the inner surfaces of the walls respectively have at least one stepped structure, and the stepped structures together form the at least one pair structure with at least one accommodating space ; wherein, the at least one accommodating space is used for accommodating the at least one optical lens.
於一較佳實施例中,該至少一對位結構包括一第一 對位結構,且該至少一階梯結構包括一第一階梯結構,而該至少一容置空間包括一第一容置空間;其中,該些第一階梯結構共同形成具有該第一容置空間之該第一對位結構。 In a preferred embodiment, the at least one pair of bit structures includes a first an alignment structure, the at least one stepped structure includes a first stepped structure, and the at least one accommodating space includes a first accommodating space; wherein, the first stepped structures together form a space having the first accommodating space The first alignment structure.
於一較佳實施例中,該至少一對位結構更包括一第二對位結構,且該至少一階梯結構更包括一第二階梯結構,而該至少一容置空間更包括一第二容置空間;其中,該些第二階梯結構共同形成具有該第二容置空間之該第二對位結構,且該第二對位結構位於該第一對位結構之下方。 In a preferred embodiment, the at least one alignment structure further includes a second alignment structure, the at least one stepped structure further includes a second stepped structure, and the at least one accommodating space further includes a second accommodating space. an accommodating space; wherein, the second step structures together form the second aligning structure having the second accommodating space, and the second aligning structure is located below the first aligning structure.
於一較佳實施例中,該框架中之至少部分壁體各自具有一排氣孔,且該雷射晶粒所產生之至少部分熱能係經由該排氣孔而向外排出。 In a preferred embodiment, at least part of the walls of the frame each have an exhaust hole, and at least part of the thermal energy generated by the laser die is discharged through the exhaust hole.
於一較佳實施例中,該導線架之該基板係為一金屬基板。 In a preferred embodiment, the substrate of the lead frame is a metal substrate.
於一較佳實施例中,該導線架至少經由一光罩(masking)製程、一蝕刻(etching)製程以及一封膠(molding)製程而形成。 In a preferred embodiment, the lead frame is formed through at least a masking process, an etching process and a molding process.
於一較佳實施例中,該至少一光學鏡片包括一繞射光學元件(diffractive optical element,DOE),用以對通過其中之該雷射光束進行光束整型,而使該雷射光束形成一結構光。 In a preferred embodiment, the at least one optical lens includes a diffractive optical element (DOE) for beam shaping the laser beam passing therethrough, so that the laser beam forms a Structured light.
於一較佳實施例中,該繞射光學元件係經由一壓印製程而形成。 In a preferred embodiment, the diffractive optical element is formed through an imprint process.
於一較佳實施例中,該繞射光學元件係經由對一液態材料進行壓印並通過紫外線(UV)固化後所形成之一體式透鏡(monolithic lens);抑或是該至少一光學鏡片更包括一透光基材, 且該繞射光學元件係經由該壓印製程而形成於該透光基材上。 In a preferred embodiment, the diffractive optical element is a monolithic lens formed by imprinting a liquid material and curing by ultraviolet (UV); or the at least one optical lens further comprises a monolithic lens. A light-transmitting substrate, And the diffractive optical element is formed on the transparent substrate through the imprinting process.
於一較佳實施例中,該至少一光學鏡片更包括一準直光學元件,其設置於該雷射晶粒以及該繞射光學元件之間,用以準直通過該準直光學元件之該雷射光束。 In a preferred embodiment, the at least one optical lens further includes a collimating optical element disposed between the laser die and the diffractive optical element for collimating the collimating optical element through the collimating optical element. laser beam.
於一較佳實施例中,該繞射光學元件以及該準直光學元件中之至少一者係經由一壓印製程而形成。 In a preferred embodiment, at least one of the diffractive optical element and the collimating optical element is formed through an imprint process.
於一較佳實施例中,該繞射光學元件以及該準直光學元件係經由對一液態材料進行壓印並通過紫外線(UV)固化後所同時形成之一體式透鏡(monolithic lens);抑或是該至少一光學鏡片更包括至少一透光基材,且該繞射光學元件以及該準直光學元件中之至少一者係經由該壓印製程而形成於該至少透光基材上。 In a preferred embodiment, the diffractive optical element and the collimating optical element are formed by simultaneously forming a monolithic lens by imprinting a liquid material and curing it by ultraviolet rays (UV); or The at least one optical lens further includes at least one transparent substrate, and at least one of the diffractive optical element and the collimating optical element is formed on the at least transparent substrate through the imprinting process.
於一較佳實施例中,該雷射晶粒係為一邊射型雷射(Edge Emitting Laser,EEL)晶粒,其包括一邊射型雷射單元以及一反射單元,且該邊射型雷射單元用以產生該雷射光束,而該反射單元用以反射該雷射光束。 In a preferred embodiment, the laser die is an edge emitting laser (EEL) die, which includes an edge emitting laser unit and a reflection unit, and the edge emitting laser The unit is used for generating the laser beam, and the reflecting unit is used for reflecting the laser beam.
於一較佳實施例中,該邊射型雷射晶粒還包括與該邊射型雷射單元相鄰之一堆積層疊材料,而該反射單元包括一反射斜面以及位於該反射斜面上之一反射層;其中,該邊射型雷射單元以及該堆積層疊材料係因應一晶圓被進行一晶圓加工製程後而形成,而該反射斜面係因應該堆積層疊材料被進行一微機械加工製程後而形成於該堆積層疊材料上。 In a preferred embodiment, the edge-emitting laser die further includes a stacked material adjacent to the edge-emitting laser unit, and the reflecting unit includes a reflecting slope and one located on the reflecting slope. A reflective layer; wherein, the edge-emitting laser unit and the stacked layered material are formed after a wafer is subjected to a wafer processing process, and the reflective bevel is formed by a micromachining process due to the stacked layered material It is then formed on the build-up laminate.
於一較佳實施例中,該反射層係為一介電(dielectric)塗層或一金(gold)塗層。 In a preferred embodiment, the reflective layer is a dielectric coating or a gold coating.
於一較佳實施例中,該反射單元被以一六軸加工機 製造而處於一特定位置並具有一特定角度,用以使被該反射單元反射之該雷射光束的光軸垂直該至少一光學鏡片。 In a preferred embodiment, the reflective unit is processed by a six-axis machine It is manufactured at a specific position and has a specific angle, so that the optical axis of the laser beam reflected by the reflection unit is perpendicular to the at least one optical lens.
於一較佳實施例中,雷射模組更包括一反射光學元件,其設置於該基板上並位於該框架內,用以反射來自該雷射晶粒之該雷射光束。 In a preferred embodiment, the laser module further includes a reflective optical element disposed on the substrate and in the frame for reflecting the laser beam from the laser die.
於一較佳實施例中,該雷射晶粒係為一垂直共振腔面射型雷射(Vertical Cavity Surface Emitting Laser,VCSEL)晶粒。 In a preferred embodiment, the laser die is a Vertical Cavity Surface Emitting Laser (VCSEL) die.
於一較佳實施例中,本發明亦提供一種雷射模組,包括:至少一光學鏡片;一雷射晶粒,設置於該至少一光學鏡片之下方,包括:一邊射型雷射單元,用以產生一雷射光束;以及一反射單元,用以反射來自該邊射型雷射單元之該雷射光束而使該雷射光束朝該至少一光學鏡片之方向行進;以及一載體,用以承載該至少一光學鏡片以及該雷射晶粒。 In a preferred embodiment, the present invention also provides a laser module, comprising: at least one optical lens; a laser die disposed under the at least one optical lens, including: an edge-firing laser unit, for generating a laser beam; and a reflection unit for reflecting the laser beam from the edge-emitting laser unit to make the laser beam travel in the direction of the at least one optical lens; and a carrier for to carry the at least one optical lens and the laser die.
於一較佳實施例中,該雷射晶粒還包括與該邊射型雷射單元相鄰之一堆積層疊材料,而該反射單元包括一反射斜面以及位於該反射斜面上之一反射層;其中,該邊射型雷射單元以及該堆積層疊材料係因應一晶圓被進行一晶圓加工製程後而形成,而該反射斜面係因應該堆積層疊材料被進行一微機械加工製程後而形成於該堆積層疊材料上。 In a preferred embodiment, the laser die further includes a stacked layered material adjacent to the edge-emitting laser unit, and the reflection unit includes a reflection slope and a reflection layer on the reflection slope; Wherein, the edge-emitting laser unit and the stacked material are formed after a wafer is subjected to a wafer processing process, and the reflective slope is formed after the stacked material is subjected to a micromachining process on the stacked laminate.
於一較佳實施例中,該反射層係為一介電(dielectric)塗層或一金(gold)塗層。 In a preferred embodiment, the reflective layer is a dielectric coating or a gold coating.
於一較佳實施例中,該反射單元被以一六軸加工機 製造而處於一特定位置並具有一特定角度,用以使被該反射單元反射之該雷射光束的光軸垂直該至少一光學鏡片。 In a preferred embodiment, the reflective unit is processed by a six-axis machine It is manufactured at a specific position and has a specific angle, so that the optical axis of the laser beam reflected by the reflection unit is perpendicular to the at least one optical lens.
於一較佳實施例中,該至少一光學鏡片包括一繞射光學元件(diffractive optical element,DOE),用以對通過其中之該雷射光束進行光束整型,而使該雷射光束形成一結構光。 In a preferred embodiment, the at least one optical lens includes a diffractive optical element (DOE) for beam shaping the laser beam passing therethrough, so that the laser beam forms a Structured light.
於一較佳實施例中,該繞射光學元件係經由一壓印製程而形成。 In a preferred embodiment, the diffractive optical element is formed through an imprint process.
於一較佳實施例中,該至少一光學鏡片更包括一準直光學元件,其設置於該雷射晶粒以及該準直光學元件之間,用以準直通過該準直光學元件之該雷射光束。 In a preferred embodiment, the at least one optical lens further includes a collimating optical element disposed between the laser die and the collimating optical element for collimating the collimating optical element through the collimating optical element. laser beam.
於一較佳實施例中,該繞射光學元件以及該準直光學元件中之至少一者係經由一壓印製程而形成。 In a preferred embodiment, at least one of the diffractive optical element and the collimating optical element is formed through an imprint process.
於一較佳實施例中,該載體係為一導線架(lead frame),其包括一基板以及一框架,且該框架連接於該基板並具有至少一對位結構;其中,該雷射晶粒電連接於該基板上,且該至少一光學鏡片經由該至少一對位結構而安裝於該框架上。 In a preferred embodiment, the carrier system is a lead frame, which includes a substrate and a frame, and the frame is connected to the substrate and has at least a pair of alignment structures; wherein the laser die It is electrically connected to the substrate, and the at least one optical lens is mounted on the frame through the at least one pair of alignment structures.
於一較佳實施例中,該框架包括複數壁體,且該些壁體之內側表面分別具有至少一階梯結構,而該些階梯結構共同形成具有至少一容置空間之該至少一對位結構;其中,該至少一容置空間用以容置該至少一光學鏡片。 In a preferred embodiment, the frame includes a plurality of walls, and the inner surfaces of the walls respectively have at least one stepped structure, and the stepped structures together form the at least one pair structure with at least one accommodating space ; wherein, the at least one accommodating space is used for accommodating the at least one optical lens.
於一較佳實施例中,該至少一對位結構包括一第一對位結構,且該至少一階梯結構包括一第一階梯結構,而該至少一容置空間包括一第一容置空間;其中,該些第一階梯結構共同形成具有該第一容置空間之該第一對位結構。 In a preferred embodiment, the at least one alignment structure includes a first alignment structure, the at least one stepped structure includes a first stepped structure, and the at least one accommodating space includes a first accommodating space; Wherein, the first step structures together form the first alignment structure having the first accommodating space.
於一較佳實施例中,該至少一對位結構更包括一第二對位結構,且該至少一階梯結構更包括一第二階梯結構,而該至少一容置空間更包括一第二容置空間;其中,該些第二階梯結構共同形成具有該第二容置空間之該第二對位結構,且該第二對位結構位於該第一對位結構之下方。 In a preferred embodiment, the at least one alignment structure further includes a second alignment structure, the at least one stepped structure further includes a second stepped structure, and the at least one accommodating space further includes a second accommodating space. an accommodating space; wherein, the second step structures together form the second aligning structure having the second accommodating space, and the second aligning structure is located below the first aligning structure.
於一較佳實施例中,該導線架之該基板係為一金屬基板。 In a preferred embodiment, the substrate of the lead frame is a metal substrate.
於一較佳實施例中,該載體具有至少一排氣孔,且該雷射晶粒所產生之至少部分熱能係經由該至少一排氣孔而向外排出。 In a preferred embodiment, the carrier has at least one vent hole, and at least part of the thermal energy generated by the laser die is discharged to the outside through the at least one vent hole.
於一較佳實施例中,本發明亦提供一種雷射晶粒,包括:一邊射型雷射單元,用以產生一雷射光束;一堆積層疊材料,相鄰於該邊射型雷射單元;其中,該邊射型雷射單元以及該堆積層疊材料係因應一晶圓被進行一晶圓加工製程後而形成;以及一反射單元,用以反射該雷射光束,並包括一反射斜面以及位於該反射斜面上之一反射層;其中,該反射斜面係因應該堆積層疊材料被進行一微機械加工製程後而形成於該堆積層疊材料上。 In a preferred embodiment, the present invention also provides a laser die, comprising: an edge-fired laser unit for generating a laser beam; a stacked layered material adjacent to the edge-fired laser unit ; wherein, the edge-emitting laser unit and the stacked laminated material are formed after a wafer is subjected to a wafer processing process; and a reflection unit is used to reflect the laser beam, and includes a reflection slope and A reflective layer located on the reflective slope; wherein, the reflective slope is formed on the stacked stacked material after the stacked stacked material is subjected to a micromachining process.
於一較佳實施例中,該反射層係為一介電(dielectric)塗層或一金(gold)塗層。 In a preferred embodiment, the reflective layer is a dielectric coating or a gold coating.
於一較佳實施例中,該反射單元具有一俯仰(pitch)角度、一翻滾(roll)角度以及一偏擺(yaw)角度,且該俯仰角度、該 翻滾角度以及該偏擺角度用以使該雷射光束之光軸朝向一特定方向。 In a preferred embodiment, the reflection unit has a pitch angle, a roll angle and a yaw angle, and the pitch angle, the The roll angle and the yaw angle are used to make the optical axis of the laser beam face a specific direction.
於一較佳實施例中,本發明亦提供一種雷射晶粒之製造方法,包括:(a)對一半導體基材進行一半導體製程而形成一邊射型雷射單元以及與該邊射型雷射單元相鄰之一堆積層疊材料;其中,該邊射型雷射單元,用以產生一雷射光束;(b)對該堆積層疊材料進行一微機械加工製程而於該堆積層疊材料上形成一反射斜面;以及(c)設置一反射層於該反射斜面上;其中,該反射層用以反射來自該邊射型雷射單元之該雷射光束。 In a preferred embodiment, the present invention also provides a method for manufacturing a laser die, which includes: (a) performing a semiconductor process on a semiconductor substrate to form an edge-emitting laser unit; A stacked laminate material adjacent to one of the laser units; wherein, the edge-emitting laser unit is used to generate a laser beam; (b) a micromachining process is performed on the stacked stacked material to form on the stacked stacked material a reflecting slope; and (c) disposing a reflecting layer on the reflecting slope; wherein, the reflecting layer is used for reflecting the laser beam from the edge-emitting laser unit.
於一較佳實施例中,該步驟(b)包括:(b1)於該堆積層疊材料上形成一凹槽空間;(b2)放置用以反射該雷射光束之一鏡面元件至該凹槽空間;(b3)調整該鏡面元件之一設置位置及/或一設置角度而使反射後之該雷射光束的光軸朝向一特定方向,並依據調整後之該設置位置及/或該設置角度而獲得該反射斜面之一X軸位置、一Y軸位置、一Z軸位置、一俯仰(pitch)角度、一翻滾(roll)角度及/或一偏擺(yaw)角度;以及(b5)於該堆積層疊材料上形成位於該X軸位置、該Y軸位置及/或該Z軸位置並具有該俯仰角度、該翻滾角度及/或該偏擺角度之該反射斜面。 In a preferred embodiment, the step (b) includes: (b1) forming a groove space on the stacked laminated material; (b2) placing a mirror element for reflecting the laser beam into the groove space (b3) Adjusting a setting position and/or a setting angle of the mirror element so that the optical axis of the reflected laser beam faces a specific direction, and according to the setting position and/or the setting angle after the adjustment obtaining an X-axis position, a Y-axis position, a Z-axis position, a pitch angle, a roll angle and/or a yaw angle of the reflection slope; and (b5) in the The reflective slope is formed on the stacking material at the X-axis position, the Y-axis position and/or the Z-axis position and having the pitch angle, the roll angle and/or the yaw angle.
於一較佳實施例中,該反射層係經由一濺鍍(sputter)製程而形成於該反射斜面上。 In a preferred embodiment, the reflective layer is formed on the reflective slope through a sputtering process.
於一較佳實施例中,該反射層係為一介電(dielectric)塗層或一金(gold)塗層。 In a preferred embodiment, the reflective layer is a dielectric coating or a gold coating.
於一較佳實施例中,本發明亦提供一種雷射模組之製造方法,包括:(a)設置一雷射晶粒於一載體上;以及(b)利用一主動式對準(Active Alignment)方式將至少一光學鏡片設置於該載體上而使該雷射晶粒以及該至少一光學鏡片相對準。 In a preferred embodiment, the present invention also provides a method for manufacturing a laser module, comprising: (a) disposing a laser die on a carrier; and (b) utilizing an active alignment ) method to dispose at least one optical lens on the carrier so that the laser die and the at least one optical lens are aligned.
於一較佳實施例中,該載體係為一導線架(lead frame),其包括一基板以及連接於該基板之一框架;其中,該雷射晶粒電連接於該基板,而該至少一光學鏡片經由該主動式對準之方式而安裝於該框架上。 In a preferred embodiment, the carrier system is a lead frame, which includes a substrate and a frame connected to the substrate; wherein the laser die is electrically connected to the substrate, and the at least one The optical lens is mounted on the frame by means of the active alignment.
於一較佳實施例中,該至少一光學鏡片包括一繞射光學元件(diffractive optical element,DOE),用以對通過其中之該雷射光束進行光束整型,而使該雷射光束形成一結構光。 In a preferred embodiment, the at least one optical lens includes a diffractive optical element (DOE) for beam shaping the laser beam passing therethrough, so that the laser beam forms a Structured light.
於一較佳實施例中,該至少一光學鏡片更包括一準直光學元件,其設置於該雷射晶粒以及該繞射光學元件之間,用以準直通過該準直光學元件之該雷射光束。 In a preferred embodiment, the at least one optical lens further includes a collimating optical element disposed between the laser die and the diffractive optical element for collimating the collimating optical element through the collimating optical element. laser beam.
1:雷射模組 1: Laser module
2A:雷射模組 2A: Laser Module
2B:雷射模組 2B: Laser Module
2C:雷射模組 2C: Laser Module
2D:雷射模組 2D: Laser Module
2E:雷射模組 2E: Laser Module
3:鏡面元件 3: Mirror element
10:外殼體 10: Outer shell
11:內殼體 11: Inner shell
12:基板 12: Substrate
13:雷射晶粒 13: Laser Die
14:陶瓷板 14: Ceramic plate
15:反射光學元件 15: Reflective optics
16:準直光學元件 16: Collimating optics
17:繞射光學元件 17: Diffractive optics
21:雷射晶粒 21: Laser Die
21’:雷射晶粒 21': Laser Die
21”:雷射晶粒 21": Laser Die
22:光學鏡片 22: Optical lens
23:導線架 23: Lead frame
23’:導線架 23': Lead Frame
24:反射光學元件 24: Reflective optics
25:基材 25: Substrate
26:外殼體 26: Outer shell
27:陶瓷板 27: Ceramic plate
29:導線 29: Wire
211:邊射型雷射單元 211: Edge-fired laser unit
212:反射單元 212: Reflective unit
213:堆積層疊材料 213: Stacked Laminated Materials
214:凹陷空間 214: Recessed space
221:繞射光學元件 221: Diffractive Optical Components
221’:繞射光學元件 221': Diffractive optics
222:準直光學元件 222: Collimating Optics
222’:準直光學元件 222': Collimating Optics
223:第一透光基材 223: The first transparent substrate
224:第二透光基材 224: The second transparent substrate
225:透光基材 225: light-transmitting substrate
226:繞射光學元件 226: Diffractive Optical Elements
227:準直光學元件 227: Collimating Optics
231:基板 231: Substrate
232:框架 232: Frame
241:反射層 241: Reflective layer
2121:反射斜面 2121: Reflective Bevel
2122:反射層 2122: Reflective layer
2321:對位結構 2321: Parametric structure
2321’:對位結構 2321’: Parametric structure
2322:壁體 2322: Wall
23211:第一對位結構 23211: First pair structure
23212:第二對位結構 23212: Second Parametric Structure
23221:第一階梯結構 23221: The first ladder structure
23222:第二階梯結構 23222: Second Ladder Structure
23223:排氣孔 23223: Vent hole
A11:光軸 A11: Optical axis
A12:光軸 A12: Optical axis
A21:光軸 A21: Optical axis
A22:光軸 A22: Optical axis
P1:步驟 P1: Steps
P2:步驟 P2: Steps
P3:步驟 P3: Steps
P4:步驟 P4: Steps
P5:步驟 P5: Steps
P6:步驟 P6: Steps
L1:雷射光束 L1: Laser beam
L2:雷射光束 L2: Laser beam
T1:步驟 T1: Step
T2:步驟 T2: Steps
Z1:半導體基材的第一部分 Z1: The first part of the semiconductor substrate
Z2:半導體基材的第二部分 Z2: The second part of the semiconductor substrate
θ1:傾斜角度 θ1: Inclination angle
圖1:係為習知雷射模組之部分結構的剖面概念示意圖。 FIG. 1 is a schematic cross-sectional conceptual diagram of a part of the structure of a conventional laser module.
圖2:係為圖1所示雷射模組之部分結構的立體分解 示意圖。 Fig. 2 is a three-dimensional exploded view of a part of the structure of the laser module shown in Fig. 1 Schematic.
圖3A:係為本發明雷射模組於一第一實施例之部分結構的剖面概念示意圖。 FIG. 3A is a schematic cross-sectional schematic diagram of a partial structure of the laser module of the present invention in a first embodiment.
圖3B:係為圖3A所示之繞射光學元件與準直光學元件於一另一實施態樣的結構概念示意圖。 FIG. 3B is a schematic structural diagram of the diffractive optical element and the collimating optical element shown in FIG. 3A in another embodiment.
圖4:係為本發明雷射模組之製造方法的一較佳方塊流程示意圖。 FIG. 4 is a schematic diagram of a preferred block flow of the manufacturing method of the laser module of the present invention.
圖5:係為圖3A所示導線架之一側壁及其排氣孔的結構概念示意圖。 FIG. 5 is a schematic structural conceptual diagram of a side wall of the lead frame shown in FIG. 3A and its exhaust hole.
圖6:係為圖3A所示雷射模組之雷射晶粒的上視概念示意圖。 FIG. 6 is a conceptual schematic top view of the laser die of the laser module shown in FIG. 3A .
圖7:係為本發明雷射晶粒之製造方法的一較佳方塊流程示意圖。 FIG. 7 is a schematic block diagram of a preferred block flow of the manufacturing method of the laser chip of the present invention.
圖8A:係為圖7所示方法的執行概念示意圖。 FIG. 8A is a schematic diagram of the execution concept of the method shown in FIG. 7 .
圖8B:係為圖7所示方法的執行概念示意圖。 FIG. 8B is a schematic diagram of the execution concept of the method shown in FIG. 7 .
圖8C:係為圖7所示方法的執行概念示意圖。 FIG. 8C is a schematic diagram of the execution concept of the method shown in FIG. 7 .
圖8D:係為圖7所示方法的執行概念示意圖。 FIG. 8D is a schematic diagram of the execution concept of the method shown in FIG. 7 .
圖8E:係為圖7所示方法的執行概念示意圖。 FIG. 8E is a schematic diagram of the execution concept of the method shown in FIG. 7 .
圖9:係為本發明雷射模組於一第二實施例之部分結構的剖面概念示意圖。 FIG. 9 is a schematic cross-sectional conceptual diagram of a partial structure of the laser module of the present invention in a second embodiment.
圖10:係為本發明雷射模組於一第三實施例之部分結構的剖面概念示意圖。 FIG. 10 is a schematic cross-sectional conceptual diagram of a partial structure of the laser module of the present invention in a third embodiment.
圖11:係為本發明雷射模組於一第四實施例之部分結構的剖面概念示意圖。 FIG. 11 is a schematic cross-sectional conceptual diagram of a part of the structure of the laser module of the present invention in a fourth embodiment.
圖12:係為本發明雷射模組於一第五實施例之部分結構的剖面概念示意圖。 FIG. 12 is a schematic cross-sectional conceptual diagram of a partial structure of the laser module of the present invention in a fifth embodiment.
本發明之實施例將藉由下文配合相關圖式進一步加以解說。盡可能的,於圖式與說明書中,相同標號係代表相同或相似構件。於圖式中,基於簡化與方便標示,形狀與厚度可能經過誇大表示。可以理解的是,未特別顯示於圖式中或描述於說明書中之元件,為所屬技術領域中具有通常技術者所知之形態。本領域之通常技術者可依據本發明之內容而進行多種之改變與修改。 Embodiments of the present invention will be further explained with the help of the related drawings below. Wherever possible, in the drawings and the description, the same reference numbers refer to the same or similar components. In the drawings, shapes and thicknesses may be exaggerated for simplicity and convenience. It should be understood that the elements not particularly shown in the drawings or described in the specification have forms known to those of ordinary skill in the art. Those skilled in the art can make various changes and modifications based on the content of the present invention.
請參閱圖3A,其為本發明雷射模組於一第一實施例之部分結構的剖面概念示意圖。雷射模組2A包括雷射晶粒21、複數光學鏡片22以及導線架(lead frame)23,且導線架23包括基板231以及框架232;其中,基板231為可導電的基板,框架232的底部連接於基板231,而框架232的頂部具有複數對位結構2321,每一光學鏡片22可經由相應的對位結構2321而安裝於框架232上。此外,雷射晶粒21設置於基板231上,其係透過導線29接合(wire bonding)的方式電連接於基板231,並用以於接收電力後輸出雷射光束L2,且雷射晶粒21所輸出的雷射光束L2於通過該些光學鏡片22後向外投射。惟,雷射晶粒21與基板231的電連接方式並不以上述為限。
Please refer to FIG. 3A , which is a schematic cross-sectional conceptual diagram of a partial structure of the laser module of the present invention in a first embodiment. The
於本較佳實施例中,該些光學鏡片22包括繞射光學
元件221以及準直光學元件222,且準直光學元件222設置於雷射晶粒21與繞射光學元件221之間,用以準直通過準直光學元件222的雷射光束L2,而繞射光學元件221用以對通過其中的雷射光束L2進行光束整型,以使雷射光束L2形成結構光並向外輸出,因此雷射模組2A可視為用以提供結構光的結構光模組。
In this preferred embodiment, the
較佳者,但不以此為限,該些光學鏡片22還包括第一透光基材223以及第二透光基材224,且繞射光學元件221係經由壓印製程而形成於第一透光基材223,因此繞射光學元件221與第一透光基材223為單件式的光學元件,而準直光學元件222亦是經由壓印製程而形成於第二透光基材224上,故準直光學元件222與第二透光基材224亦為單件式的光學元件。
Preferably, but not limited to this, the
上述僅為製造繞射光學元件221以及準直光學元件222的一種實施態樣,製造繞射光學元件221以及準直光學元件222並不以上述為限。請參閱圖3B,其為圖3A所示之繞射光學元件與準直光學元件於一另一實施態樣的結構概念示意圖。圖3B所示之繞射光學元件226為經由對一液態材料進行壓印並通過紫外線(UV)固化後所形成的一體式透鏡(monolithic lens),且上述液態材料可如為環氧樹脂(epoxy),同樣地,圖3B所示之準直光學元件227亦可以是經由對一液態材料進行壓印並通過紫外線(UV)固化後所形成的一體式透鏡(monolithic lens)。
The above is only one embodiment of manufacturing the diffractive
又,於本較佳實施例中,導線架23的框架232包括複數壁體2322,且每一壁體2322的內側表面分別具有相連結的第一階梯結構23221以及第二階梯結構23222,且該些壁體2322的該些第一階梯結構23221共同形成具有第一容置空間的第一對位
結構23211,而該些壁體2322的該些第二階梯結構23222共同形成具有第二容置空間的第二對位結構23212,且第二對位結構23212位於第一對位結構23211的下方。
In addition, in this preferred embodiment, the
其中,第一對位結構23211的第一容置空間係供第一透光基材223及其上的繞射光學元件221放置在其中,且第一透光基材223及其上的繞射光學元件221是經由主動式對準(Active Alignment)的方式與雷射晶粒21相對準並與第一對位結構23211相對位,再透過膠體固設於第一對位結構23211上。又,第二對位結構23212的第二容置空間係供第二透光基材224及其上的準直光學元件222放置在其中,且第二透光基材224及其上的準直光學元件222是經由主動式對準(Active Alignment)的方式與雷射晶粒21相對準並與第二對位結構23212相對位,再透過膠體固設於第二對位結構23212上。惟,繞射光學元件221以及準直光學元件222的對位方式以及固定方式並不以上述為限。
The first accommodating space of the
基於以上說明,本發明提供雷射模組的一種製造方法如圖4所示,首先,執行步驟T1,設置雷射晶粒21於導線架23上,接著再執行步驟T2,利用主動式對準(Active Alignment)方式將光學鏡片22設置於導線架23上而使光學鏡片22與雷射晶粒21相對準。
Based on the above description, the present invention provides a manufacturing method of a laser module as shown in FIG. 4 . First, step T1 is performed to set the laser die 21 on the
請同步參閱圖5,其為圖3A所示導線架之一側壁及其排氣孔的結構概念示意圖。導線架23之框架232的至少部分壁體2322還具有貫穿壁體2322的排氣孔23223,因此雷射晶粒21所產生的至少部分熱能可經由排氣孔23223而向外排出,有助於提升雷射晶粒21的散熱效果,特別是對於高功率的雷射晶粒21
將更顯成效。較佳者,但不以此為限,導線架23的基板231採用金屬基板,除了可提升雷射模組2A的散熱能力與結構強度,還可提供平整的結構,令雷射晶粒21可精準地設置在基板231上。於一實施態樣中,上述導線架23係至少透過光罩(masking)製程、蝕刻(etching)製程以及封膠(molding)製程而形成,藉以提升整體結構的製造精度,而上述製程的具體實施方式係為熟知本技藝人士所知悉,故在此不再予以贅述。
Please also refer to FIG. 5 , which is a schematic structural conceptual diagram of a side wall of the lead frame and its exhaust hole shown in FIG. 3A . At least part of the
再者,於本較佳實施例中,雷射晶粒21為邊射型雷射(Edge Emitting Laser,EEL)晶粒,其包括邊射型雷射單元211以及反射單元212,且邊射型雷射單元211用以產生雷射光束L2,而反射單元212用以反射來自邊射型雷射單元211的雷射光束L2,使雷射光束L2往準直光學元件222以及繞射光學元件221的方向行進。
Furthermore, in this preferred embodiment, the laser die 21 is an edge-emitting laser (EEL) die, which includes an edge-emitting
請同步參閱圖6,其為圖3A所示雷射模組之雷射晶粒的上視概念示意圖。本較佳實施例之雷射晶粒21還包括與邊射型雷射單元211相鄰的堆積層疊材料213,而反射單元212包括反射斜面2121以及位於反射斜面2121上的反射層2122;其中,邊射型雷射單元211以及堆積層疊材料213係因應一晶圓被進行一晶圓加工製程後而形成,而反射斜面2121則因應堆積層疊材料213被進行一微機械加工製程後而形成於堆積層疊材料213上。
Please also refer to FIG. 6 , which is a conceptual schematic top view of the laser die of the laser module shown in FIG. 3A . The laser die 21 of this preferred embodiment further includes a stacked
詳言之,請參閱圖7、圖8A~圖8E,圖7為本發明雷射晶粒之製造方法的一較佳方塊流程示意圖,圖8A~圖8E則分別為圖7所示方法的執行概念示意圖。首先,執行步驟P1,對半導體基材進行一半導體製程而形成一邊射型雷射單元211以及與
邊射型雷射單元211相鄰的堆積層疊材料213,其如圖8A所示。詳言之,於本案中,製作每一雷射晶粒21所需之半導體基材的大小大於習知雷射晶粒21所需之半導體基材的大小,亦即,於本案中,每一雷射晶粒21所需之半導體基材可區分為第一部分Z1以及擴增延展的第二部分Z2,第一部份Z1於經過半導體製程後可形成邊射型雷射單元211,上述半導體製程係與習知製作雷射晶粒21的方式無異,故在此不再予以贅述,而可以理解的是,於製作邊射型雷射單元211的同時,擴增延展的第二部份Z2上會堆疊半導體製程中所使用的各式材料,令擴增延展的第二部份Z2形成堆積層疊材料213。
In detail, please refer to FIG. 7 and FIGS. 8A to 8E. FIG. 7 is a schematic block diagram of a preferred block flow of the method for manufacturing a laser die according to the present invention, and FIGS. 8A to 8E respectively illustrate the execution of the method shown in FIG. 7. Concept sketch. First, step P1 is executed to perform a semiconductor process on the semiconductor substrate to form the edge-emitting
接下來執行步驟P2,於堆積層疊材料213上形成一凹陷空間214,其如圖8B所示;再執行步驟P3,放置用以反射雷射光束L2的鏡面元件3至堆積層疊材料213的凹槽空間214中,其如圖8C所示;接著,執行步驟P4,藉由調整鏡面元件3的設置位置與設置角度而使反射後之雷射光束L2的光軸朝向一特定方向,亦即,藉由調整鏡面元件3的設置位置與設置角度直到反射後之雷射光束L2的光軸A22呈垂直於水平面的狀態,進而可依據鏡面元件3被調整後的設置位置與設置角度而獲得反射單元212之反射斜面2121所應設置的位置與所應具備的角度,其中,反射單元212之反射斜面2121所應設置的位置包括X軸位置、Y軸位置及/或Z軸位置,而反射單元212之反射斜面2121所應具備的角度包括俯仰(pitch)角度、翻滾(roll)角度及/或偏擺(yaw)角度;再執行步驟P5,移出鏡面元件3並於堆積層疊材料213上形成位於上述X軸位置、Y軸位置及/或Z軸位置並具有上述俯仰角
度、翻滾角度及/或偏擺角度的反射斜面2121,其如圖8D所示;最後,執行步驟P6,設置用以反射雷射光束L2的反射層2122於反射斜面2121上,其如圖8E所示。
Next, step P2 is performed to form a
其中,上述步驟P2~步驟P5可透過微機械加工製程來執行,其中步驟P4~步驟P5還可利用六軸以上的精密加工機,而步驟P6可經由濺鍍(sputter)製程而使反射層2122形成於反射斜面2121上。較佳者,反射層2122為介電(dielectric)塗層或金(gold)塗層。惟,步驟P2~步驟P6所採用的製程以及反射層2122的形式並不以上述為限,熟知本技藝人士皆可依據實際應用需求而進行任何均等的變更設計。
The above steps P2 to P5 can be performed through a micromachining process, wherein the steps P4 to P5 can also use a precision machining machine with more than six axes, and the step P6 can be performed through a sputtering process to make the
根據以上的說明,本案雷射模組2A至少具有下列優勢:(1)零件組成少,組裝程序得以被簡化,進而提升組裝精度;例如,繞射光學元件221以及準直光學元件222可直接地經由框架232的對位結構2321與主動式對準(Active Alignment)的方式而定位於導線架23上;(2)雷射晶粒21中除了具有邊射型雷射單元211,還具有其位置與傾斜角度可因應邊射型雷射單元211所輸出之雷射光束L2的光軸A21的角度而被調整的反射單元212,使被反射後之雷射光束L2的光軸A22可垂直於準直光學元件222及/或繞射光學元件221,進而令雷射模組2A具有極佳的電/光轉換效率;(3)準直光學元件222以及繞射光學元件221皆是經由壓印製程而形成,故製造公差可控制在5微米(μm)以下;(4)導線架23的基板231採用金屬基板,除了可提升雷射模組2A的散熱能力與結構強度,還可提供平整的結構,令雷射晶粒21可精準地設置在基板231上;(5)導線架23之框架232的壁體2322上具有可供雷射 晶粒21所產生的熱能向外排出的排氣孔23223,有助於提升雷射晶粒21的散熱效果,特別是對於高功率的雷射晶粒21將更顯成效。 According to the above description, the laser module 2A of the present application has at least the following advantages: (1) The component composition is less, the assembly procedure is simplified, and the assembly accuracy is improved; for example, the diffractive optical element 221 and the collimating optical element 222 can be directly It is positioned on the lead frame 23 through the alignment structure 2321 of the frame 232 and the active alignment (Active Alignment); (2) the laser die 21 not only has the edge-emitting laser unit 211, but also has its position The reflection unit 212 can adjust the tilt angle according to the angle of the optical axis A21 of the laser beam L2 output by the edge-emitting laser unit 211, so that the optical axis A22 of the reflected laser beam L2 can be perpendicular to the The collimating optical element 222 and/or the diffractive optical element 221, so that the laser module 2A has excellent electrical/optical conversion efficiency; (3) The collimating optical element 222 and the diffractive optical element 221 are both processed by imprinting Therefore, the manufacturing tolerance can be controlled to be less than 5 micrometers (μm); (4) the substrate 231 of the lead frame 23 adopts a metal substrate, which can not only improve the heat dissipation capability and structural strength of the laser module 2A, but also provide a flat structure , so that the laser die 21 can be accurately arranged on the substrate 231; (5) the wall 2322 of the frame 232 of the lead frame 23 has a laser The exhaust hole 23223 through which the heat energy generated by the die 21 is discharged to the outside helps to improve the heat dissipation effect of the laser die 21 , especially for the high power laser die 21 .
當然,上述皆僅為實施例,熟知本技藝人士可依據實際應用需求而進行任何均等的變更設計。以下再提出本案雷射模組的數個實施例。請參閱圖9,其為本發明雷射模組於一第二實施例之部分結構的剖面概念示意圖。本實施例之雷射模組2B大致類似於第一實施例中所述者,在此不再予以贅述,而不同之處在於,繞射光學元件221’以及準直光學元件222’經由同一壓印製程而分別形成於同一透光基材225上的相對兩側,因此繞射光學元件221’、準直光學元件222’以及透光基材225為單件式的光學元件。其中,透光基材225及壓印於其上的繞射光學元件221’與準直光學元件222’可經由主動式對準(Active Alignment)的方式而設置於導線架23’的對位結構2321’上。於另一實施態樣中,繞射光學元件221’與準直光學元件222’亦可以是經由對一液態材料進行壓印並通過紫外線(UV)固化後所同時形成的一體式透鏡(monolithic lens)。
Of course, the above are only examples, and those skilled in the art can make any equivalent changes and designs according to actual application requirements. Hereinafter, several embodiments of the laser module of the present case are proposed. Please refer to FIG. 9 , which is a schematic cross-sectional conceptual diagram of a partial structure of the laser module of the present invention in a second embodiment. The
請參閱圖10,其為本發明雷射模組於一第三實施例之部分結構的剖面概念示意圖。本實施例之雷射模組2C大致類似於第二實施例中所述者,在此不再予以贅述,而不同之處在於,雷射晶粒21’變更設計為垂直共振腔面射型雷射(Vertical Cavity Surface Emitting Laser,VCSEL)晶粒。
Please refer to FIG. 10 , which is a schematic cross-sectional conceptual diagram of a partial structure of the laser module of the present invention in a third embodiment. The
請參閱圖11,其為本發明雷射模組於一第四實施例之部分結構的剖面概念示意圖。本實施例之雷射模組2D大致類似
於第一實施例中所述者,在此不再予以贅述,而不同之處在於,雷射模組2D還包括反射光學元件24,且雷射晶粒21”採用傳統僅具有邊射型雷射單元211的邊射型雷射晶粒,其中,雷射晶粒21”以及反射光學元件皆設置於導線架23的基板231上,且雷射晶粒21”電性連接於基板231,當邊射型雷射晶粒產生雷射光束L2後,反射光學元件24的反射層241可反射來自雷射晶粒21”的雷射光束L2,使雷射光束L2往準直光學元件222以及繞射光學元件221的方向行進並接著於形成結構光後向外輸出。
Please refer to FIG. 11 , which is a schematic cross-sectional conceptual diagram of a partial structure of the laser module of the present invention in a fourth embodiment. The 2D laser module of this embodiment is roughly similar
What was described in the first embodiment will not be repeated here, and the difference is that the
請參閱圖12,其為本發明雷射模組於一第五實施例之部分結構的剖面概念示意圖。本實施例之雷射模組2E大致類似於第一實施例中所述者,在此不再予以贅述,而不同之處在於,將雷射模組2E的載體由導線架23變更設計為呈電路板形式的基材25,並採用如圖1、2所示之傳統的準直光學元件16以及繞射光學元件17,且雷射模組2E還包括用供準直光學元件16以及繞射光學元件17固定設置於其中的外殼體26。其中,雷射模組2E的組裝方法包括;先透過陶瓷板27將包括有邊射型雷射單元211以及反射單元212的雷射晶粒21設置於基材25上,再移動外殼體26使準直光學元件16以及繞射光學元件17對準雷射晶粒21的反射單元212,最後固定外殼體26。
Please refer to FIG. 12 , which is a schematic cross-sectional conceptual diagram of a partial structure of the laser module of the present invention in a fifth embodiment. The
以上所述僅為本發明之較佳實施例,並非用以限定本發明之申請專利範圍,因此凡其它未脫離本發明所揭示之精神下所完成之等效改變或修飾,均應包含於本案之申請專利範圍內。 The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the scope of the patent application of the present invention. Therefore, all other equivalent changes or modifications made without departing from the spirit disclosed in the present invention shall be included in this case. within the scope of the patent application.
2A:雷射模組 2A: Laser Module
21:雷射晶粒 21: Laser Die
22:光學鏡片 22: Optical lens
23:導線架 23: Lead frame
211:邊射型雷射單元 211: Edge-fired laser unit
212:反射單元 212: Reflective unit
213:堆積層疊材料 213: Stacked Laminated Materials
221:繞射光學元件 221: Diffractive Optical Components
222:準直光學元件 222: Collimating Optics
223:第一透光基材 223: The first transparent substrate
224:第二透光基材 224: The second transparent substrate
231:基板 231: Substrate
232:框架 232: Frame
2121:反射斜面 2121: Reflective Bevel
2122:反射層 2122: Reflective layer
2321:對位結構 2321: Parametric structure
2322:壁體 2322: Wall
23211:第一對位結構 23211: First pair structure
23212:第二對位結構 23212: Second Parametric Structure
23221:第一階梯結構 23221: The first ladder structure
23222:第二階梯結構 23222: Second Ladder Structure
23223:排氣孔 23223: Vent hole
A21:光軸 A21: Optical axis
A22:光軸 A22: Optical axis
L2:雷射光束 L2: Laser beam
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EP1434209B1 (en) * | 2002-12-27 | 2008-04-09 | Samsung Electronics Co., Ltd. | Laser diode module with integrated drive chip and optical pickup apparatus adopting the same |
TW201413315A (en) * | 2012-09-26 | 2014-04-01 | Delta Electronics Inc | Optical module and optical coupling method using the same |
TW201622281A (en) * | 2014-10-31 | 2016-06-16 | 高準精密工業股份有限公司 | Surface mounted device type laser module |
-
2020
- 2020-05-15 TW TW109116278A patent/TWI752498B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1434209B1 (en) * | 2002-12-27 | 2008-04-09 | Samsung Electronics Co., Ltd. | Laser diode module with integrated drive chip and optical pickup apparatus adopting the same |
TW201413315A (en) * | 2012-09-26 | 2014-04-01 | Delta Electronics Inc | Optical module and optical coupling method using the same |
TW201622281A (en) * | 2014-10-31 | 2016-06-16 | 高準精密工業股份有限公司 | Surface mounted device type laser module |
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