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TWI749033B - 基板載置方法及基板載置裝置 - Google Patents

基板載置方法及基板載置裝置 Download PDF

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TWI749033B
TWI749033B TW106124717A TW106124717A TWI749033B TW I749033 B TWI749033 B TW I749033B TW 106124717 A TW106124717 A TW 106124717A TW 106124717 A TW106124717 A TW 106124717A TW I749033 B TWI749033 B TW I749033B
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藤里敏章
芦澤宏明
門田太一
藤井康
布重裕
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日商東京威力科創股份有限公司
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Abstract

[課題]提供一種在將基板載置於載置台之際，可抑制基板偏移的基板載置方法。 　　[解決手段]在基座(12)朝向被支撐於各升降銷(13)之晶圓(W)上升的基板處理裝置(10)中，在晶圓(W)的邊緣部抵接於基座(12)之載置面後，停止基座(12)的上升，並在停止基座(12)的上升一段預定時間後，再重新開始基座(12)的上升，其後，反覆停止基座(12)的上升一段預定時間及再重新開始基座(12)的上升，直至進行晶圓(W)與載置面之抵接且晶圓(W)的整面完全地抵接於載置面。

Description

基板載置方法及基板載置裝置
[0001] 本發明，係關於將基板載置於載置台的基板載置方法及基板載置裝置。
[0002] 已知一種基板處理裝置，其係將作為基板之半導體晶圓(以下，僅稱為「晶圓」。)收容於腔室內，使用導入腔室內之處理氣體或在腔室內產生之電漿，對晶圓進行所期望的處理例如成膜處理或電漿處理。在該基板處理裝置中，係在對晶圓施予所期望的處理之際，在作為被載置於腔室內之平台的基座載置晶圓。 　　[0003] 晶圓，雖係必需載置於基座中之晶圓之載置面(以下，僅稱為「載置面」。)的預定位置，但存在有所載置之晶圓從載置面的預定位置偏移之情形。在該情況下，例如在對晶圓施予作為成膜處理的熱CVD(Chemical Vapor Deposition)處理或ALD(Atomic Layer Deposition)處理之際，晶圓會從被內建於基座的加熱器偏移而無法均等地加熱晶圓，使得被形成於晶圓之膜的厚度不均勻。又，例如在對晶圓施予作為電漿處理的蝕刻處理之際，晶圓之邊緣部會產生起因於晶圓之偏移的阻抗偏差，使得被形成於晶圓之表面上之鞘層的厚度變得不均勻，從而無法使晶圓的各部中之蝕刻量成為均勻。 　　[0004] 因此，提議如下述之技術：在載置面設置由比晶圓之直徑稍微大之直徑的凹陷所構成之凹穴，並在凹穴的側面設置晶圓之定位用之突起，在將晶圓收容於凹穴之際，沿著被形成於各突起的錐面，使晶圓下降，藉此，將晶圓收納至凹穴內之適當的位置(例如，參閱專利文獻1)。 　　[0005] 然而，一般在將晶圓載置於基座的情況下，首先，藉由從基座之載置面往上方突出的複數個升降銷，從搬送臂接收晶圓，在搬送臂從腔室內退出後，藉由升降銷下降或基座上升的方式，使晶圓載置於基座。 [先前技術文獻] [專利文獻] 　　[0006] 　　[專利文獻1]日本特開2000-260851號公報
[本發明所欲解決之課題] 　　[0007] 然而，在將晶圓載置於基座之際，存在有晶圓無法均等地抵接於載置面而部分接觸之虞。在該情況下，例如即便在載置面形成凹穴，亦存在有如下述的問題：來自載置面之抗力相對於晶圓之垂直方向呈微小地傾斜而作用於晶圓，且該抗力之與晶圓平行的方向中之分力作為移動力而作用於晶圓，晶圓則從基座的載置面之預定位置偏移。特別是，在將晶圓大口徑化的情況下，伴隨著晶圓與載置面之抵接面積的增加，不僅抗力，分力亦增加，從而有使晶圓的偏移變得顯著之虞。 　　[0008] 本發明之目的，係提供一種在將基板載置於載置台之際，可抑制基板偏移的基板載置方法及基板載置裝置。 [用以解決課題之手段] 　　[0009] 為了達成上述目的，本發明之基板載置方法，係藉由從載置台中之基板的載置面突出，且使來自支撐前述基板之複數個突起物之前述載置面的突出量相對地減少之方式，使前述基板向前述載置台接近並載置，該基板載置方法，其特徵係，在前述基板的至少一部分抵接於前述載置面後，停止前述基板向前述載置台的接近動作，並在停止前述基板向前述載置台的接近動作後，再重新開始前述基板向前述載置台的接近動作。 [發明之效果] 　　[0010] 根據本發明，由於是在基板的至少一部分抵接於載置面後，停止基板向載置台的接近動作，並在停止基板向載置台的接近動作後，再重新開始基板向載置台的接近動作，因此，基板，係被暫時靜止，從而可藉由基板之阻尼效果，使藉由起因於基板與載置面之抵接的抗力所產生之基板的振動衰減。藉此，可使抗力消滅且防止該抗力作為基板之移動力而起作用的情形。其結果，在將基板載置於載置台之際，可抑制基板偏移的情形。
[0012] 以下，參閱圖面，說明關於本發明之實施形態。 　　[0013] 首先，說明關於本發明之第1實施形態之基板載置裝置及基板載置方法。 　　[0014] 圖1，係概略地表示內建本發明之本實施形態之基板載置裝置之基板處理裝置之構成的剖面圖，圖1(A)，係表示將晶圓收授至升降銷的情形，圖1(B)，係表示將晶圓載置於基座的情形。 　　[0015] 在圖1(A)及圖1(B)中，基板處理裝置10，係具備有：殼體狀之腔室11，收容晶圓；台狀之基座12(載置台)，被配置於腔室11內的下方；及複數根例如3根升降銷13(突起物)(僅圖示2根)，從由基座12之上面所構成之晶圓的載置面朝向上方突出。另外，基座12及各升降銷13，係構成本實施形態之基板載置裝置。在腔室11的側壁，係設置有開口即閘門14，保持晶圓W之搬送臂15則經由該閘門14進入腔室11內。由於閘門14的高度，係與各升降銷13之前端的高度大致一致，因此，保持於搬送臂15的晶圓W，係在腔室11內，位於各升降銷13之前端的附近且上方，藉由搬送臂15微量地下降或升降銷13微量地上升的方式，晶圓W便被收授至各升降銷13。將晶圓W收授至各升降銷13的搬送臂15，係從腔室11內退出。又，在腔室11的側方，係設置有對閘門14開關自如的閘閥16，當搬送臂15從腔室11內退出時，則閘閥16堵塞閘門14。 　　[0016] 各升降銷13，係自腔室11的底部直立設置，並在上下方向貫通基座12。各升降銷13，係被構成為不移動，另一方面，基座12，係被構成為可在上下方向移動，在各升降銷13支撐晶圓W後，基座12，係藉由往上方移動(上升)的方式，使所支撐的晶圓W向基座12的載置面接近，且就那樣地使晶圓W載置於載置面。基座12，係內建有加熱器或冷媒流路(皆未圖示)，以控制所載置之晶圓W的溫度。另外，各升降銷13，係亦可構成為可上下動作。 　　[0017] 又，基板處理裝置10，係具備有處理氣體導入機構、排氣機構或電漿產生機構(皆未圖示)，例如在對腔室11內進行減壓後，藉由處理氣體或電漿，對晶圓W施予所期望的處理例如成膜處理或電漿處理。 　　[0018] 然而，在基板處理裝置10中，係為了使晶圓W穩定地載置於基座12的載置面，而以使載置面與藉由各升降銷13之前端所形成的虛擬平面(以下，稱為「晶圓支撐面」。)成為平行的方式，配置各升降銷13或基座12。然而，因各升降銷13或基座12的機械公差，更加上基座12之移動時的鬆動，載置面與晶圓支撐面無法完全平行，從而存在有例如晶圓支撐面相對於載置面呈微小地傾斜之虞(圖2(A))。在該情況下，當基座12上升而使晶圓W接近於載置面，亦即進行接近動作時，晶圓W，係整體不會同時地抵接於載置面，晶圓W之一部分例如晶圓W的邊緣部最初抵接於載置面(圖2(B))。此時，晶圓W的邊緣部，雖係作用有起因於抵接之抗力N，但抗力N，係垂直地作用於載置面。另一方面，如上述般，由於晶圓支撐面，係相對於載置面呈微小地傾斜，因此，晶圓W亦相對於載置面呈傾斜。因此，由於抗力N，係相對於晶圓W之垂直方向呈微小地傾斜而起作用，不會垂直地作用於晶圓W，因此，對於晶圓W，抗力N之分力F作為移動力而作用於水平方向，晶圓W便往水平方向偏移。 　　[0019] 而且，在基座12持續上升而進行晶圓W與載置面之抵接的期間，由於抗力N伴隨著進行之抵接而持續作用於晶圓W，因此，對於晶圓W，分力F作為移動力而持續作用於水平方向(圖2(C))。又，當晶圓W與載置面之抵接持續進行而不中斷時，則存在有氣體例如處理氣體或稀釋氣體殘留於晶圓W與載置面之間的情形。在該情況下，特別是，為了對晶圓W施予所期望的處理，當對腔室11內進行減壓時，由於晶圓W與載置面之間及腔室11內的壓力差會變大，且晶圓W易從載置面浮起而偏移，因此，更助長上述的移動力所致之晶圓W之水平方向的偏移。其結果，存在有晶圓W在水平方向大幅地移動，且晶圓W從載置面之預定位置偏移的情形。 　　[0020] 在本實施形態中，係對應於此，在基座12上升之際，防止分力F作用於晶圓W。 　　[0021] 圖3，係表示本實施形態之基板載置方法的工程圖；圖4，係圖3之基板載置方法的時序圖。 　　[0022] 首先，當晶圓W被收授至各升降銷13且各升降銷13支撐晶圓W時，基座12，係上升直至晶圓W的邊緣部抵接於載置面(圖3(A))。當晶圓W的邊緣部抵接於載置面時，則在晶圓W，係作用有來自載置面的阻力N(圖3(B))。一般，當外力施加至板狀物時，該板狀物會振動。亦即，在板狀物中，外力雖被轉換成振動，但在本實施形態中，作用於晶圓W之抗力N被轉換成晶圓W的振動(圖3(C))。另一方面，在本實施形態中，係當晶圓W的邊緣部抵接於載置面時，則基座12暫時停止上升。一般，當持續使板狀物靜止時，該板狀物之振動，雖係藉由板狀物之阻尼效果而衰減，但當基座12暫時停止上升時，進行晶圓W與載置面之抵接會被中斷，晶圓W便靜止。又，在本實施形態中，停止基座12的上升持續一段預定時間例如0.5秒。亦即，由於晶圓W，係被持續靜止一段預定時間，因此，從抗力N所轉換之晶圓W的振動，係藉由晶圓W之阻尼效果而衰減。因此，在本實施形態中，係在起因於晶圓W之邊緣部與載置面的抵接之抗力N被轉變成晶圓W的振動後，藉由衰減的方式而消滅。 　　[0023] 其次，在停止基座12的上升持續一段預定時間後，雖再重新開始基座12的上升，但基座12，係當上升預定量例如0.1mm左右時，再次停止上升一段預定時間。此時，在晶圓W中，雖係抗力N伴隨著進行晶圓W與載置面之抵接而作用於晶圓W(圖3(D))，且作用於晶圓W之抗力N被轉換成晶圓W的振動(圖3(E))，但在此，由於晶圓W亦被持續靜止一段預定時間，因此，從抗力N所轉換之晶圓W的振動，係藉由晶圓W之阻尼效果而衰減。因此，在本實施形態中，係在伴隨著進行晶圓W與載置面之抵接而產生的抗力N被轉變成晶圓W的振動後，藉由衰減的方式而消滅。 　　[0024] 其後，反覆停止基座12的上升一段預定時間及再重新開始基座12的上升，直至進行晶圓W與載置面之抵接且晶圓W的整面完全地抵接於載置面(圖4)。另外，反覆停止基座12的上升之停止的預定時間，係全部被設定為相同時間例如0.5秒。 　　[0025] 根據本實施形態，在晶圓W的邊緣部抵接於載置面後，停止基座12的上升，並在停止基座12的上升一段預定時間後，再重新開始基座12的上升。亦即，在停止了基座12的上升之際，由於晶圓W，係被持續靜止一段預定時間，因此，可藉由晶圓W之阻尼效果，使藉由起因於晶圓W與載置面的抵接之抗力N所產生之晶圓W的振動衰減，並使抗力N消滅。而且，由於在進行晶圓W與載置面之抵接的期間，反複停止基座12的上升及再重新開始基座12的上升，因此，每當進行晶圓W與載置面之抵接而產生抗力N時，可藉由使由該抗力N所產生之晶圓W的振動衰減之方式，使抗力N消滅。藉此，可防止該抗力N作為晶圓W之水平方向移動力而起作用的情形。其結果，在將晶圓W載置於基座12之際，可抑制晶圓W從載置面之預定位置偏移的情形。 　　[0026] 又，在本實施形態中，由於在晶圓W的邊緣部抵接於載置面後或進行晶圓W與載置面之抵接的期間，停止基座12的上升一段預定時間，因此，晶圓W與載置面的接近動作會被停止一段預定時間，從而可使氣體從晶圓W與載置面之間充分地擴散。其結果，可防止氣體殘留於晶圓W與載置面之間的情形，且即便腔室11內為減壓環境下，亦可防止晶圓W從載置面浮起而偏移的情形。 　　[0027] 在上述的本實施形態中，反覆停止基座12的上升之停止的預定時間，雖係全部被設定為相同時間，但由於吾人認為晶圓W與載置面最初抵接時的抗力N，係比其後之起因於進行晶圓W與載置面之抵接的抗力N大，因此，將晶圓W與載置面最初抵接時之基座12的上升之停止時間設定成比其後之停止基座12的上升之停止時間長為較佳(圖5(A))。藉此，可確實地使藉由晶圓W與載置面最初抵接時的抗力N所產生之晶圓W的較大振動衰減。又，由於吾人認為晶圓W與載置面最初抵接後之起因於進行晶圓W與載置面之抵接的抗力N非常小，因此，亦可僅在晶圓W與載置面最初抵接時，停止基座12的上升一段預定時間(圖5(B))。藉此，可縮短晶圓W載置於基座12所需的時間，而且，可提升生產率。 　　[0028] 而且，在上述的本實施形態中，雖係在晶圓W的邊緣部抵接於載置面後，初次停止基座12的上升，但由於晶圓W的邊緣部因晶圓W或基座12之熱膨脹而較預想更早抵接於載置面，因此，亦可從晶圓W的邊緣部抵接於載置面之前，反複停止基座12的上升一段預定時間及再重新開始基座12的上升。 　　[0029] 其次，說明關於本發明之第2實施形態之基板載置裝置及基板載置方法。 　　[0030] 由於本實施形態，係其構成、作用基本上與上述的第1實施形態相同，因此，關於重複之構成、作用，係省略說明，在下述中，僅進行關於不同之構成、作用的說明。 　　[0031] 圖6，係概略地表示內建本發明之本實施形態之基板載置裝置之基板處理裝置之構成的剖面圖，圖6(A)，係表示將晶圓收授至升降銷的情形，圖6(B)，係表示將晶圓載置於基座的情形。 　　[0032] 在圖6(A)及圖6(B)中，基板處理裝置60，係具備有：台狀之基座61(載置台)，被配置於腔室11內的下方；及複數根例如3根升降銷62(突起物)(僅圖示2根)，從基座61之載置面朝向上方突出。另外，基座61及各升降銷62，係構成本實施形態之基板載置裝置。由於突出時之各升降銷62之前端的高度，係與閘門14的高度大致一致，因此，保持於搬送臂15的晶圓W，係在腔室11內，位於各升降銷62之前端的附近且上方，藉由搬送臂15微量地下降或升降銷62微量地上升的方式，晶圓W便被收授至各升降銷62。 　　[0033] 基座61，係被構成為不在上下方向移動，另一方面，各升降銷62，係被構成為可藉由內建於升降銷61的上下機構，在上下方向移動，各升降銷62，係在支撐晶圓W後，藉由往下方移動(下降)的方式，使所支撐的晶圓W向基座61的載置面接近，且就那樣地使晶圓W載置於載置面。 　　[0034] 圖7，係表示本實施形態之基板載置方法的工程圖；圖8，係圖7之基板載置方法的時序圖。 　　[0035] 首先，當晶圓W被收授至各升降銷62且各升降銷62支撐晶圓W時，基座12，係下降直至所支撐之晶圓W的邊緣部抵接於載置面(圖7(A))。 　　[0036] 其次，當晶圓W的邊緣部抵接於載置面時，則在晶圓W，係作用有來自載置面的阻力N1 (圖7(B))，該阻力N1 ，係被轉換成晶圓W的振動(圖7(C))。在此，當晶圓W的邊緣部抵接於載置面時，則各升降銷62，係暫時停止下降而使晶圓W靜止，並持續停止下降一段預定時間。亦即，即便為本實施形態，由於晶圓W亦被持續靜止一段預定時間，因此，在起因於晶圓W之邊緣部與載置面的抵接之抗力N1 被轉變成晶圓W的振動後，藉由晶圓W之阻尼效果而衰減並消滅。 　　[0037] 其次，在停止各升降銷62的下降持續一段預定時間後，雖再重新開始各升降銷62的下降，但各升降銷62，係當下降預定量時，再次停止下降一段預定時間。此時，在晶圓W中，雖係抗力N1 伴隨著進行晶圓W與載置面之抵接而作用於晶圓W(圖7(D))，且作用於晶圓W之抗力N1 被轉換成晶圓W的振動(圖7(E))，但在此，由於晶圓W亦被持續靜止一段預定時間，因此，從抗力N1 所轉換之晶圓W的振動，係藉由晶圓W之阻尼效果而衰減。因此，即便為本實施形態，亦在伴隨著進行晶圓W與載置面之抵接而產生的抗力N1 被轉變成晶圓W的振動後，藉由衰減的方式而消滅。 　　[0038] 其後，反覆停止各升降銷62的下降一段預定時間及再重新開始各升降銷62的下降，直至進行晶圓W與載置面之抵接且晶圓W的整面完全地抵接於載置面(圖8)。另外，反複停止各升降銷62的下降之停止的預定時間，亦與第1實施形態相同地，全部被設定為相同時間。 　　[0039] 根據本實施形態，由於在晶圓W的邊緣部抵接於載置面後，停止各升降銷62的下降，並持續使晶圓W靜止一段預定時間，因此，可藉由使由抗力N1 所產生之晶圓W的振動衰減之方式，使抗力N1 消滅。而且，由於在進行晶圓W與載置面之抵接的期間，反複停止各升降銷62的下降及再重新開始各升降銷62的下降，因此，每當進行晶圓W與載置面之抵接而產生抗力N1 時，可藉由使由該抗力N1 所產生之晶圓W的振動衰減之方式，使抗力N1 消滅。藉此，可防止抗力N1 作為晶圓W之水平方向的移動力而起作用的情形。 　　[0040] 又，在本實施形態中，由於在晶圓W的邊緣部抵接於載置面後或進行晶圓W與載置面之抵接的期間，停止各升降銷62的下降一段預定時間，因此，可防止氣體殘留於晶圓W與載置面之間。 　　[0041] 在上述的本實施形態中，反覆停止各升降銷62的下降之停止的預定時間，雖係全部被設定為相同時間，但亦可將晶圓W與載置面最初抵接時之各升降銷62的下降之停止時間設定成比其後之停止各升降銷62的下降之停止時間長(圖9(A))，又，亦可僅在晶圓W與載置面最初抵接時，停止各升降銷62的下降一段預定時間(圖9(B))。而且，亦可從晶圓W的邊緣部抵接於載置面之前，反複停止各升降銷62的下降一段預定時間及再重新開始各升降銷62的下降。 　　[0042] 以上，雖使用上述各實施形態說明了本發明，但本發明並不限定於上述各實施形態者。 　　[0043] 例如，在上述各實施形態中，晶圓W雖係被載置於基座12(61)，但上述的各實施形態之基板載置方法，係不論板狀物之種類，可在將該板狀物載置於台狀物時加以應用。特別是，在板狀物為FPD(Flat Panel Display)的情況下，由於FPD，係遠大於晶圓，且部分接觸於台狀物而引起位置偏移的可能性高，因此，藉由以應用上述之各實施形態之基板載置方法的方式來抑制位置偏移所獲得的成果，係遠大於將上述之各實施形態之基板載置方法應用於晶圓的情形。 　　[0044] 又，在上述的各實施形態中，雖係對腔室11內進行了減壓，但即便未對腔室11內進行減壓，亦可藉由應用上述之各實施形態之基板載置方法的方式，抑制晶圓W往水平方向偏移的情形。 　　[0045] 而且，本發明之目的，係亦可藉由如下述之方式而達成：將記錄有實現上述之各實施形態之機能之軟體的程式碼之記憶媒體供給於基板處理裝置10，60的控制部(未圖示)，該控制部之CPU讀出被儲存於記憶媒體的程式碼而執行。 　　[0046] 在該情況下，從記憶媒體所讀取出之程式碼本身會成為實現上述之各實施形態的機能，程式碼及記憶有該程式碼的記憶媒體，係構成本發明。 　　[0047] 又，作為用於供給程式碼的記憶媒體，係只要為例如RAM、NV-RAM、軟碟(註冊商標)、硬碟、光磁碟、CD-ROM、CD-R、CD-RW、DVD(DVD-ROM、DVD-RAM、DVD-RW、DVD+RW)等的光碟、磁帶、非揮發性的記憶卡、其他ROM等的可記憶上述程式碼者即可。抑或，上述程式碼，係亦可藉由從連接於網際網路、商用網路、或區域網路等之未圖示的其他電腦或資料庫等下載的方式，而供給至上述控制部。 　　[0048] 又，不僅藉由執行CPU所讀取出之程式碼的方式來實現上述實施形態的機能，亦包含如下述之情形：基於該程式碼之指令，CPU上運作之OS(作業系統)等進行實際之處理的一部分或是全部，藉由該處理而實現上述之各實施形態的機能。 　　[0049] 而且，亦包含如下述之情形：從記憶媒體所讀取出的程式碼被寫入至連接於上述控制部之機能擴充卡或機能擴充單元所具備的記憶體後，基於該程式碼之指示，該機能擴充卡或機能擴充單元所具備的CPU等進行實際之處理的一部分或全部，藉由該處理而實現上述之各實施形態的機能。 　　[0050] 上述程式碼的形態，係亦可由目的碼、藉由編譯器所執行的程式碼、供給於OS之腳本資料(script data)等的形態所構成。
[0051]W‧‧‧晶圓10、60‧‧‧基板處理裝置12、61‧‧‧基座13、62‧‧‧升降銷
[0011] 　　[圖1]概略地表示內建本發明之第1實施形態之基板載置裝置之基板處理裝置之構成的剖面圖，圖1(A)，係表示將晶圓收授至升降銷的情形，圖1(B)，係表示將晶圓載置於基座的情形。 　　[圖2]用以說明在將晶圓載置於基座之際，晶圓從載置面之預定位置偏移之理由的工程圖。 　　[圖3]表示本實施形態之基板載置方法的工程圖。 　　[圖4]圖3之基板載置方法的時序圖。 　　[圖5]圖3之基板載置方法之變形例的時序圖，圖5(A)，係表示第1變形例，圖5(B)，係表示第2變形例。 　　[圖6]概略地表示內建本發明之第2實施形態之基板載置裝置之基板處理裝置之構成的剖面圖，圖6(A)，係表示將晶圓收授至升降銷的情形，圖6(B)，係表示將晶圓載置於基座的情形。 　　[圖7]表示本實施形態之基板載置方法的工程圖。 　　[圖8]圖7之基板載置方法的時序圖。 　　[圖9]圖7之基板載置方法之變形例的時序圖，圖9(A)，係表示第1變形例，圖9(B)，係表示第2變形例。
12‧‧‧基座
13‧‧‧升降銷
N‧‧‧抗力
W‧‧‧晶圓

Claims (7)

  1. 一種基板載置方法，係藉由從載置台中之基板的載置面突出，且使來自支撐前述基板之複數個突起物之前述載置面的突出量相對地減少之方式，使前述基板向前述載置台接近並載置，該基板載置方法，其特徵係，在前述基板的至少一部分抵接於前述載置面後，停止前述基板向前述載置台的接近動作，在停止前述基板向前述載置台的接近動作後，再重新開始前述基板向前述載置台的接近動作。
  2. 如申請專利範圍第1項之基板載置方法，其中，反複停止前述基板向前述載置台的接近動作及再重新開始前述基板向前述載置台的接近動作。
  3. 如申請專利範圍第2項之基板載置方法，其中，停止前述基板最初向前述載置台的接近動作之停止時間，係比其後之停止前述基板向前述載置台的接近動作之停止時間長。
  4. 如申請專利範圍第1~3項中任一項之基板載置方法，其中，藉由前述載置台朝向被支撐於前述複數個突起物之前述基板上升的方式，使前述基板向前述載置台接近。
  5. 如申請專利範圍第1~3項中任一項之基板載置方法，其中，藉由前述複數個突起物朝向前述載置台下降的方式，使前述基板向前述載置台接近。
  6. 如申請專利範圍第1~3項中任一項之基板載置方法，其中，在減壓環境下，使前述基板向前述載置台接近並載置。
  7. 一種基板載置裝置，係具備有載置台與從前述載置台中之基板的載置面突出且支撐前述基板的複數個突起物，並藉由前述載置台朝向被支撐於前述複數個突起物之前述基板上升的方式，使前述基板載置於前述載置台，該基板載置裝置，其特徵係，在前述基板的至少一部分抵接於前述載置面後，停止前述載置台的上升，在停止前述載置台的上升後，再重新開始前述載置台的上升。
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