TWI718458B - Treatment liquid discharge pipe and substrate treatment device - Google Patents
Treatment liquid discharge pipe and substrate treatment device Download PDFInfo
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- TWI718458B TWI718458B TW107147050A TW107147050A TWI718458B TW I718458 B TWI718458 B TW I718458B TW 107147050 A TW107147050 A TW 107147050A TW 107147050 A TW107147050 A TW 107147050A TW I718458 B TWI718458 B TW I718458B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/10—Block- or graft-copolymers containing polysiloxane sequences
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
本發明提供一種防止吐出口中的液滴下落的處理液吐出配管、及包括所述處理液吐出配管的基板處理裝置。處理液吐出配管41於內部具有供處理液流通的流路44,且將於流路44中流通的處理液自吐出口41A朝基板表面吐出。流路44包括:壁面的至少一部分為親水性的親水性流路、及第二配管流路442。於將處理液吐出配管41安裝於基板處理裝置的狀態下,第二配管流路442相對於鉛垂方向而傾斜,且使上游側的端部高於下游側的端部。The present invention provides a processing liquid discharge pipe that prevents droplets from falling in a discharge port, and a substrate processing apparatus including the processing liquid discharge pipe. The processing liquid discharge pipe 41 has a flow path 44 in which the processing liquid flows, and the processing liquid flowing in the flow path 44 is discharged from the discharge port 41A to the surface of the substrate. The flow path 44 includes a hydrophilic flow path in which at least a part of the wall surface is hydrophilic, and a second piping flow path 442. In a state where the processing liquid discharge pipe 41 is attached to the substrate processing apparatus, the second pipe flow path 442 is inclined with respect to the vertical direction, and the upstream end is higher than the downstream end.
Description
本發明是有關於一種於對基板表面吐出處理液的裝置中供處理液流通的處理液吐出配管、及包括該處理液吐出配管的基板處理裝置。The present invention relates to a processing liquid discharge pipe through which a processing liquid flows in an apparatus for discharging a processing liquid onto a substrate surface, and a substrate processing apparatus including the processing liquid discharge pipe.
先前,於半導體晶圓的製造步驟中,將光阻劑液、蝕刻液、清洗液、純水等各種處理液供給至基板表面。於所述處理液的供給處理中,存在當停止處理液的供給時,自處理液的吐出口產生非預想的液滴的下落,即所謂的「滴液現象(dripping)」的情況。此種液滴的滴液現象成為基板表面產生不均(nonuniformity)的原因,因此需要避免。Previously, in the manufacturing steps of semiconductor wafers, various processing liquids such as photoresist liquid, etching liquid, cleaning liquid, and pure water were supplied to the surface of the substrate. In the supply process of the processing liquid, when the supply of the processing liquid is stopped, an unexpected drop of liquid droplets may occur from the discharge port of the processing liquid, which is a so-called “dripping phenomenon”. The dripping phenomenon of this kind of droplets is a cause of nonuniformity on the surface of the substrate, and therefore needs to be avoided.
於專利文獻1中,揭示了一種為了防止滴液現象,而使處理液的吐出孔成為超親水性的供給噴嘴。於專利文獻1中,藉由將吐出孔設為超親水性,附著於前端部的表面的處理液的液滴不會成為球狀,而擴展為薄膜狀。藉此,防止球狀的液滴因振動而自前端部的表面流下來。 [現有技術文獻] [專利文獻]Patent Document 1 discloses a supply nozzle in which the discharge hole of the treatment liquid is made super-hydrophilic in order to prevent the dripping phenomenon. In Patent Document 1, by making the discharge hole superhydrophilic, the droplets of the treatment liquid adhering to the surface of the tip portion do not become spherical, but expand into a thin film. This prevents spherical droplets from flowing down from the surface of the tip portion due to vibration. [Prior Art Document] [Patent Document]
[專利文獻1]日本專利特開平10-256116號公報[Patent Document 1] Japanese Patent Laid-Open No. 10-256116
[發明所欲解決之課題] 根據專利文獻1的構成,能夠抑制附著於噴嘴前端部的處理液的滴液現象。但是,於較前端部更靠內側(上游側)處殘留有處理液的情況下,有可能因處理液的自重而產生滴液現象。[Problem to be Solved by the Invention] According to the configuration of Patent Document 1, it is possible to suppress the dripping phenomenon of the processing liquid adhering to the tip of the nozzle. However, if the processing liquid remains inside (upstream) from the front end portion, there is a possibility that the liquid dripping phenomenon may occur due to the weight of the processing liquid.
本發明是鑒於所述狀況而成者,其目的在於提供一種防止吐出口中的液滴下落的處理液吐出配管、及包括該處理液吐出配管的基板處理裝置。 [解決課題之手段]The present invention was made in view of the above-mentioned circumstances, and its object is to provide a processing liquid discharge pipe that prevents droplets from falling in the discharge port, and a substrate processing apparatus including the processing liquid discharge pipe. [Means to solve the problem]
為了解決所述課題,本申請案的第一發明是一種處理液吐出配管,其安裝於對基板表面吐出處理液的處理裝置,且包括:流路,供所述處理液流通;以及吐出口,對所述基板表面吐出於所述流路內流通的處理液,且所述流路包括壁面的至少一部分為親水性的親水性流路,於安裝於所述處理裝置的狀態下,所述親水性流路相對於鉛垂方向而傾斜,且使上游側的端部高於下游側的端部。In order to solve the problem, the first invention of the present application is a processing liquid discharge pipe, which is installed in a processing device that discharges a processing liquid to the surface of a substrate, and includes: a flow path through which the processing liquid flows; and a discharge port, The processing liquid flowing in the flow path is ejected to the surface of the substrate, and the flow path includes a hydrophilic flow path in which at least a part of the wall surface is hydrophilic. When installed in the processing device, the hydrophilic The sexual flow path is inclined with respect to the vertical direction, and the upstream end is higher than the downstream end.
本申請案的第二發明是根據第一發明的處理液吐出配管,其中所述流路具有壁面為疏水性的流路。The second invention of the present application is the processing liquid discharge pipe according to the first invention, wherein the flow path has a flow path whose wall surface is hydrophobic.
本申請案的第三發明是根據第一發明或第二發明的處理液吐出配管,其中所述流路具有位於所述親水性流路的下游側,且壁面為疏水性的第一流路,於安裝於所述處理裝置的狀態下,所述第一流路沿鉛垂方向延伸。The third invention of the present application is the treatment liquid discharge pipe according to the first invention or the second invention, wherein the flow path has a first flow path whose wall surface is hydrophobic and is located on the downstream side of the hydrophilic flow path. In a state of being installed in the processing device, the first flow path extends in a vertical direction.
本申請案的第四發明是根據第三發明的處理液吐出配管,其中所述吐出口位於所述第一流路的下游側端部。The fourth invention of the present application is the processing liquid discharge pipe according to the third invention, wherein the discharge port is located at the downstream end of the first flow path.
本申請案的第五發明是根據第三發明或第四發明的處理液吐出配管,其中所述親水性流路與所述第一流路鄰接。The fifth invention of the present application is the treatment liquid discharge pipe according to the third invention or the fourth invention, wherein the hydrophilic flow path is adjacent to the first flow path.
本申請案的第六發明是根據第一發明至第五發明中的任一處理液吐出配管,其中所述流路具有位於所述親水性流路的上游的第二流路,且於安裝於所述處理裝置的狀態下,所述第二流路沿水平方向延伸。The sixth invention of the present application is a processing liquid discharge piping according to any one of the first to fifth inventions, wherein the flow path has a second flow path located upstream of the hydrophilic flow path, and is installed in In the state of the processing device, the second flow path extends in a horizontal direction.
本申請案的第七發明是根據第一發明至第六發明中的任一處理液吐出配管,其中所述親水性流路由樹脂形成,且藉由浸漬於藥液中,壁面的至少一部分變成親水性。The seventh invention of the present application is a treatment liquid discharge piping according to any one of the first to sixth inventions, wherein the hydrophilic flow path is formed of resin, and at least a part of the wall surface becomes hydrophilic by being immersed in the chemical liquid. Sex.
本申請案的第八發明是根據第一發明至第七發明中的任一處理液吐出配管,其中親水性的所述親水性流路的壁面較其他流路的壁面粗糙。The eighth invention of the present application is a processing liquid discharge pipe according to any one of the first to seventh inventions, wherein the wall surface of the hydrophilic flow path is rougher than the wall surfaces of other flow paths.
本申請案的第九發明是一種處理液吐出配管,其安裝於對基板表面吐出處理液的處理裝置,且包括:流路,供所述處理液流通;以及吐出口,對所述基板表面吐出於所述流路內流通的處理液,且所述處理液吐出配管由樹脂形成,所述流路包括於使水接觸壁面的至少一部分的狀態下浸漬於藥液,使所述壁面的至少一部分成為親水性的親水性流路,當安裝於所述處理裝置時,所述親水性流路相對於鉛垂方向而傾斜,且使上游側的端部高於下游側的端部。The ninth invention of the present application is a processing liquid discharge piping, which is installed in a processing device that discharges a processing liquid to the surface of a substrate, and includes: a flow path for the processing liquid to circulate; and a discharge port to discharge the surface of the substrate The processing liquid circulates in the flow path, and the processing liquid discharge piping is formed of resin, and the flow path includes at least a part of the wall surface being immersed in the chemical solution in a state where water is in contact with at least a part of the wall surface The hydrophilic flow path becomes hydrophilic, and when installed in the processing device, the hydrophilic flow path is inclined with respect to the vertical direction, and the upstream end is higher than the downstream end.
本申請案的第十發明是根據第九發明的處理液吐出配管,其中所述親水性流路於所述流路中充滿水的狀態下浸漬於藥液中,從而成為親水性。The tenth invention of the present application is the treatment liquid discharge pipe according to the ninth invention, wherein the hydrophilic flow path is immersed in a chemical liquid in a state where the flow path is filled with water to become hydrophilic.
本申請案的第十一發明是包括第一發明至第十發明中的任一處理液吐出配管的基板處理裝置,其包括:腔室;基板保持部,於所述腔室的內部對基板進行水平地保持;處理液供給部,經由所述處理液吐出配管,對所述基板保持部所保持的基板的上表面供給處理液;以及引回機構,將所述處理液吐出配管的所述流路內的處理液朝上游側引回。 [發明的效果]The eleventh invention of the present application is a substrate processing apparatus including any one of the first to tenth inventions of the processing liquid discharge piping, which includes: a chamber; Be held horizontally; a processing liquid supply unit that supplies processing liquid to the upper surface of the substrate held by the substrate holding unit via the processing liquid discharge pipe; and a retraction mechanism that discharges the processing liquid out of the flow of the pipe The treatment liquid in the road is drawn back toward the upstream side. [Effects of the invention]
根據本申請案的第一發明至第十一發明,傾斜的流路的壁面為親水性。當流路傾斜時,處理液的保持變得困難,但藉由將所述傾斜的流路的壁面設為親水性,所述壁面對處理液的保持力提高。即,於較吐出口更靠上游側處,處理液得以保持。藉此,能夠防止來自吐出口的處理液的滴下(液滴現象)。According to the first to eleventh inventions of this application, the wall surface of the inclined flow path is hydrophilic. When the flow path is inclined, it becomes difficult to hold the treatment liquid. However, by making the wall surface of the inclined flow path hydrophilic, the holding force of the wall facing the treatment liquid is improved. That is, the treatment liquid is held on the upstream side of the discharge port. Thereby, it is possible to prevent dripping of the processing liquid from the discharge port (droplet phenomenon).
根據本申請案的第四發明,處理液不由第一流路的壁面保持,而容易自吐出口滴下。藉此,能夠防止於吐出口附近殘存處理液,並於非預想時滴下。另外,能夠防止殘存於吐出口附近的處理液因與空氣的接觸而乾燥。According to the fourth invention of the present application, the treatment liquid is not held by the wall surface of the first flow path, but is easily dripped from the discharge port. Thereby, it is possible to prevent the treatment liquid from remaining in the vicinity of the discharge port and dripping unexpectedly. In addition, it is possible to prevent the treatment liquid remaining in the vicinity of the discharge port from being dried due to contact with air.
根據本申請案的第六發明,於第二流路中處理液的流路阻力低。因此,於第二流路中,能夠避免妨礙處理液的流通。According to the sixth invention of the present application, the flow path resistance of the treatment liquid in the second flow path is low. Therefore, in the second flow path, it is possible to avoid obstructing the flow of the processing liquid.
以下,對包括本發明的處理液吐出配管的基板處理裝置進行說明。Hereinafter, the substrate processing apparatus including the processing liquid discharge pipe of the present invention will be described.
<1.基板處理裝置的整體構成> 圖1是本實施方式的基板處理裝置100的平面圖。基板處理裝置100是於半導體晶圓的製造步驟中,對圓板狀的基板W(矽基板)的表面進行處理的裝置。基板處理裝置100進行對基板W的表面供給處理液的液體供給處理、以及使基板W的表面乾燥的乾燥處理。<1. Overall structure of substrate processing apparatus> FIG. 1 is a plan view of a
基板處理裝置100包括:分度器(indexer)101、多個處理單元102、及主搬運機器人103。The
分度器101是用以自外部搬入處理前的基板W,並且將處理後的基板W搬出至外部的部位。於分度器101中,配置有多個收容多個基板W的載體(carrier)。並且,分度器101包含省略圖示的移送機器人。移送機器人於分度器101內的載體與處理單元102或主搬運機器人103之間,移送基板W。再者,載體中,例如,可使用將基板W收納於密閉空間的公知的前端開啟式統集盒(Front Opening Unified pod,FOUP)或標準機械界面(Standard Mechanical Inter Face,SMIF)盒、或者收納基板W與外部空氣接觸的開放式晶匣(Open Cassette,OC)。The
處理單元102是逐片地處理基板W的所謂單片式的處理部。多個處理單元102配置於主搬運機器人103的周圍。於本實施方式中,配置於主搬運機器人103的周圍的四個處理單元102是沿高度方向積層成三層。即,本實施方式的基板處理裝置100總共包括十二台處理單元102。多個基板W是在各處理單元102中並列地處理。但是,基板處理裝置100所包括的處理單元102的數量並不限定於十二台,其台數可適宜進行變更。例如亦可以是二十四台、十六台、八台、四台、一台等。The
主搬運機器人103是用於在分度器101與多個處理單元102之間搬運基板W的機構。主搬運機器人103例如包括保持基板W的手(hand)、以及使手移動的臂(arm)。主搬運機器人103自分度器101取出處理前的基板W,而搬運至處理單元102。另外,當處理單元102中的基板W的處理完成後,主搬運機器人103自所述處理單元102取出處理後的基板W,而搬運至分度器101。The
<2.處理單元的構成> 接著,對處理單元102的構成進行說明。以下,對基板處理裝置100所含的多個處理單元102之中的一個進行說明,但其它處理單元102亦具有同等的構成。<2. Configuration of the processing unit> Next, the configuration of the
圖2是處理單元102的平面圖。圖3是處理單元102的縱剖面圖。如圖2及圖3所示,處理單元102包括:腔室10、基板保持部20、旋轉機構30、處理液供給部40、處理液收集部50、及控制部60。FIG. 2 is a plan view of the
腔室10是內置用於對基板W進行處理的處理空間11的框體。腔室10包括:側壁12、頂板部13、及底板部14。側壁12包圍處理空間11的側部。頂板部13覆蓋處理空間11的上部。底板部14覆蓋處理空間11的下部。基板保持部20、旋轉機構30、處理液供給部40、及處理液收集部50是收容在腔室10的內部。於側壁12的一部分設置搬入搬出口、以及使搬入搬出口開閉的擋板(shutter)(均省略圖示)。於搬入搬出口中,朝腔室10內搬入基板W及自腔室10搬出基板W。The
如圖3所示,於腔室10的頂板部13設置有風機過濾器單元(fan filter unit,FFU)15。風機過濾器單元15包括高效空氣(High Efficiency Particulate Air,HEPA)過濾器等集塵過濾器、以及使氣流產生的風機(fan)。當使風機過濾器單元15動作時,將設置基板處理裝置100的潔淨室(clean room)內的空氣擷取至風機過濾器單元15,藉由集塵過濾器而潔淨化,並供給至腔室10內的處理空間11。藉此,於腔室10內的處理空間11內,形成潔淨的空氣的向下流(down flow)。As shown in FIG. 3, a fan filter unit (FFU) 15 is provided on the
另外,於側壁12的下部的一部分上連接著排氣導管16。從風機過濾器單元15供給的空氣在腔室10的內部形成向下流之後,通過排氣導管16向腔室10的外部排出。In addition, an
基板保持部20是於腔室10的內部,水平地(以法線朝向鉛垂方向的姿勢)保持基板W的機構。基板保持部20包括圓板狀的自旋底座(spin base)21及多個夾持銷(chuck pin)22。多個夾持銷22沿自旋底座21的上表面的外周部,以等角度間隔而設置。基板W在使形成圖案的被處理面朝向上側的狀態下,保持於多個夾持銷22。各夾持銷22與基板W的周緣部的下表面及外周端面接觸,從自旋底座21的上表面經由微小的空隙將基板W支撐於上方的位置。The
於自旋底座21的內部設置有用於切換多個夾持銷22的位置的夾持銷切換機構23。夾持銷切換機構23是對多個夾持銷22,在保持基板W的保持位置與解除基板W的保持的解除位置之間進行切換。A clamping
旋轉機構30是用於使基板保持部20旋轉的機構。旋轉機構30是收容在設置於自旋底座21的下方的馬達蓋31的內部。如圖3中以虛線所示,旋轉機構30包括自旋馬達(spin motor)32及支撐軸33。支撐軸33沿鉛垂方向延伸,其下端部與自旋馬達32連接,並且上端部固定在自旋底座21的下表面的中央。當使自旋馬達32驅動時,支撐軸33以其軸芯330為中心而旋轉。並且,與支撐軸33一同,基板保持部20及基板保持部20所保持的基板W亦以軸芯330為中心而旋轉。The
處理液供給部40是對基板保持部20所保持的基板W的上表面供給處理液的機構。處理液供給部40具有三根處理液吐出配管41。三根處理液吐出配管41分別於內部具有供處理液流通的流路。處理液吐出配管41例如由聚四氟乙烯(polytetrafluoroethylene,PTFE)或全氟烷氧基烷烴(perfluoroalkoxy alkane,PFA)等氟樹脂形成。再者,處理液吐出配管41的數量並不限定於三根,亦可為一根、兩根、或四根以上。The processing
如圖2所示,處理液吐出配管41的一端被支撐於馬達42。處理液吐出配管41以被支撐於馬達42側的端部為基端部,並自此基端部沿水平方向延伸,並且其前端部是朝鉛垂方向向下彎曲。即,本實施方式的處理液吐出配管41具有L字狀的外形。於處理液吐出配管41的朝鉛垂方向向下彎曲的部分的下端部設置吐出口41A。As shown in FIG. 2, one end of the processing
處理液吐出配管41藉由馬達42的驅動,而如圖2中的箭頭般,以馬達42為中心,沿著水平方向各別地轉動。藉此,處理液吐出配管41的吐出口41A於基板保持部20所保持的基板W的上方的處理位置與較處理液收集部50更靠外側的退避位置之間移動。於供給處理液時,吐出口41A配置於基板W的上方的處理位置。而且,將於處理液吐出配管41的流路內流通的處理液自吐出口41A吐出至基板W的上表面。處理液吐出配管41的具體構成將於下文進行詳述。The processing liquid discharge piping 41 is driven by the
對各處理液吐出配管41分別連接用以供給處理液的供液部。圖4是表示與處理液吐出配管41連接的供液部45的一例的圖。圖4中,示出供給作為處理液的硫酸(H2
SO4
)與過氧化氫水(H2
O2
)的混合液即SPM清洗液的情況的例子。A liquid supply part for supplying a processing liquid is connected to each processing
供液部45具有硫酸供給源451及過氧化氫水供給源452。於連接於硫酸供給源451的流路中途設置有第一閥453。另外,於連接於過氧化氫水供給源452的流路中途設置有第二閥454。連接於硫酸供給源451及過氧化氫水供給源452的各者的流路於下游側合流,並連接於處理液吐出配管41。The
於將吐出口41A配置於處理位置的狀態下,當打開第一閥453及第二閥454時,自硫酸供給源451排出硫酸,並且自過氧化氫水供給源452排出過氧化氫水。經排出的硫酸與過氧化氫水合流而成為SPM清洗液,並被供給至處理液吐出配管41。接著,將所述SPM清洗液自處理液吐出配管41的吐出口41A朝向基板保持部20所保持的基板W的上表面吐出。When the
再者,三根處理液吐出配管41分別吐出相互不同的處理液。作為處理液的例子,除了所述的SPM清洗液之外,還可列舉SC1清洗液(氨水、過氧化氫水及純水的混合液)、SC2清洗液(鹽酸、過氧化氫水及純水的混合液)、DHF(Dilute Hydrofluoric Acid)清洗液(稀氫氟酸)、及純水(去離子水)等。In addition, the three processing
另外,於處理液吐出配管41設置回吸(suck back)配管43。回吸配管43為本發明的「引回機構」的一例。回吸配管43為沿著鉛垂方向延伸的配管。回吸配管43的上端部連接於處理液吐出配管41的沿著水平方向延伸的部位。藉此,處理液吐出配管41的沿著水平方向延伸的流路被分支。另外,回吸配管43的下端部的高度低於吐出口41A的高度。In addition, a suck back
當將第一閥453及第二閥454關閉,停止自供液部45朝處理液吐出配管41供給處理液時,來自吐出口41A的處理液的吐出停止。此時,處理液吐出配管41的流路44內殘留的處理液藉由虹吸(siphon)原理,而朝回吸配管43的流路流入。即,由於回吸配管43的下端部的高度低於吐出口41A的高度,所以於自回吸配管43的連接部位起下游側的流路44內殘留的處理液朝向回吸配管43被引回。藉此,抑制來自吐出口41A的處理液的滴下。When the
處理液收集部50是收集使用後的處理液的部位。如圖3所示,處理液收集部50包括內杯體51、中杯體52及外杯體53。內杯體51、中杯體52及外杯體53能夠藉由升降機構500(參照圖5),而相互獨立地升降移動。The processing
內杯體51包括包圍基板保持部20的周圍的圓環狀的第一引導板510。中杯體52包括位於第一引導板510的外側並且上側的圓環狀的第二引導板520。外杯體53包括位於第二引導板520的外側並且上側的圓環狀的第三引導板530。另外,內杯體51的底部是展開至中杯體52及外杯體53的下方為止。而且,於所述底部的上表面,自內側起依次設置有第一排液槽511、第二排液槽512及第三排液槽513。The
自處理液供給部40的各處理液吐出配管41吐出的處理液被供給至基板W後,因由基板W的旋轉而產生的離心力,而向外側飛散。接著,自基板W飛散的處理液被收集至第一引導板510、第二引導板520及第三引導板530中任一者。使收集至第一引導板510的處理液通過第一排液槽511,向處理單元102的外部排出。使收集至第二引導板520的處理液通過第二排液槽512,向處理單元102的外部排出。使收集至第三引導板530的處理液通過第三排液槽513,向處理單元102的外部排出。
After the processing liquid discharged from each processing
如上所述,所述處理單元102具有多條處理液的排出路徑。因此,能夠針對每個種類分別回收供給至基板的處理液。因而,經回收的處理液的廢棄或再生處理亦可以根據各處理液的性質而分別進行。
As described above, the
控制部60是用於對處理單元102內的各部進行動作控制的部位。圖5是表示控制部60與處理單元102內的各部的連接的框圖。如圖5中概念性地表示般,控制部60包括具有中央處理單元(central processing unit,CPU)等處理器61、隨機存取記憶體(random access memory,RAM)等記憶體62、及硬式磁碟機等儲存部63的電腦。於儲存部63內,安裝有用於執行處理單元102中的基板W的處理的電腦程式P。
The
另外,如圖5所示,控制部60與所述風機過濾器單元15、夾持銷切換機構23、自旋馬達32、三個馬達42、處理液供給部40的第一閥453、第二閥454、及處理液收集部50的升降機構
分別可通信地連接著。控制部60將儲存部63中所存儲的電腦程式P及資料暫時讀取至記憶體62,並基於所述電腦程式P,處理器61進行運算處理,藉此來對所述各部進行動作控制。藉此,進行處理單元102中的基板W的處理。
In addition, as shown in FIG. 5, the
<3.處理液吐出配管41的構成>
<3. Configuration of treatment
接著,對處理液吐出配管41的具體構成進行說明。圖6是處理液吐出配管41的局部剖面圖。
Next, the specific configuration of the processing
如圖6所示,處理液吐出配管41包括第一配管部411、第二配管部412、及第三配管部413。第一配管部411為沿著水平方向延伸的部位。第一配管部411的上游側的端部連接於所述的供液部45。第二配管部412為大致呈L字狀的位於處理液吐出配管41的彎曲部分的部位。第二配管部412的上游側的端部連接於第一配管部411的下游側的端部。第二配管部412的下游側的端部位於較第二配管部412的上游側的端部更靠下方處。另外,第二配管部412自上游側的端部朝向下游側的端部彎曲且延伸。第三配管部413為沿著鉛垂方向延伸的部位。第三配管部413的上游側的端部連接於第二配管部412的下游側的端部。第三配管部413的下游側的端部位於較第三配管部413的上游側的端部更靠下方處。於第三配管部413的下端部設置所述的吐出口41A。
As shown in FIG. 6, the processing
再者,第一配管部411、第二配管部412及第三配管部413既可為一個零件,亦可為不同的零件。
Furthermore, the
處理液吐出配管41於內部具有供處理液流通的流路44。流路44自上游側起依次包括:第一配管流路441、第二配管流路442及第三配管流路443。The processing
第一配管流路441形成於第一配管部411的內部,且為沿著水平方向延伸的直線流路。所述回吸配管43連接於第一配管部411。即,回吸配管43自第一配管部411分支。第一配管流路441的壁面即第一配管部411的內壁面411A為疏水性。具體而言,第一配管部411的內壁面411A較後述的第二配管部412的內壁面412A成為更平滑的面。第一配管流路441為本發明的「第二流路」的一例。The first
第二配管流路442形成於第二配管部412的內部,且為相對於鉛垂方向而傾斜的流路。第二配管流路442與第一配管流路441的下游側鄰接而存在。第二配管流路442的上游側的端部的位置高於第二配管流路442的下游側的端部的位置。第二配管流路442的壁面即第二配管部412的內壁面412A為親水性。具體而言,第二配管部412的內壁面412A較所述的第一配管部411的內壁面411A及後述的第三配管部413的內壁面413A成為更粗糙的面。另外,第二配管部412的內壁面412A較處理液吐出配管41的外壁面成為更粗糙的面。第二配管流路442為本發明的「親水性流路」的一例。The second
第三配管流路443形成於第三配管部413的內部,且為沿著鉛垂方向延伸的直線流路。第三配管流路443與第二配管流路442的下游側鄰接而存在。第三配管流路443的下端為吐出口41A。第三配管流路443的壁面即第三配管部413的內壁面413A為疏水性。具體而言,第三配管部413的內壁面413A較所述的第二配管部412的內壁面412A成為更平滑的面。第三配管流路443為本發明的「第一流路」的一例。The third
作為使第二配管流路442的壁面成為親水性的方法,例如可列舉使氟樹脂製的處理液吐出配管41浸漬於鹽酸(氯化氫(hydrogen chloride,HCL)水溶液)中的方法。當浸漬於鹽酸時,僅用水填充第一配管部411~第三配管部413中的第二配管部412內。於該狀態下,當使處理液吐出配管41浸漬於鹽酸時,溶解於鹽酸中的鹽酸氣體滲透於第二配管部412內。如此,所滲透的鹽酸氣體作用至與水接觸的第二配管部412的內壁面412A的表面。其結果,第二配管部412的內壁面412A被粗面化。與此相對,於未填充水的第一配管部411內及第三配管部413內僅積存鹽酸氣體,因此內壁面411A及內壁面413A未被粗面化。As a method of making the wall surface of the second
即,第二配管部412的內壁面412A的表面粗糙度較第一配管部411的內壁面411A及第三配管部413的內壁面413A的表面粗糙度更粗。第二配管部412的內壁面412A的表面粗糙度例如較佳為日本工業標準(Japanese Industrial Standard,JIS)B 0601:2013(對應國際標準:國際標準化組織(International Organization for Standardization,ISO)4287:1997)中所定義的「算術平均粗糙度Ra」的值為Ra=0.04~0.15。That is, the surface roughness of the
第一配管流路441的壁面為疏水性,因此第一配管流路441中的處理液的流路阻力低。因此,當自供液部45供給處理液時,於第一配管流路441中,不易妨礙處理液的流通。The wall surface of the first
另外,第三配管流路443的壁面為疏水性,因此第三配管流路443內的處理液不由第三配管流路443的壁面保持,而易自吐出口441A滴下。另外,當停止自供液部45供給處理液時,第三配管流路443內的處理液藉由回吸配管43而被引回至上游側。因此,於第三配管流路443內不易殘存處理液。其結果,能夠防止於第三配管流路443內殘存處理液,且所述殘存的處理液於非預想時滴下。另外,能夠防止殘存於吐出口41A附近的處理液因與空氣的接觸而乾燥。In addition, since the wall surface of the third
另外,第二配管流路442的壁面為親水性,因此第二配管流路442內所殘存的處理液易被保持於第二配管流路442的壁面。因此,於第二配管流路442內殘存的處理液不易朝第三配管流路443流下。尤其,第二配管流路442相對於鉛垂方向而傾斜。由流路的壁面所保持的處理液因該處理液的自重而欲朝下游側流下。關於流路內的處理液的易流下度,所述流路傾斜的情況大於流路不傾斜的情況。當由第二配管流路442的壁面保持的處理液流下時,處理液自吐出口41A滴下。但是,於該處理液吐出配管41中,將傾斜的第二配管流路442的壁面設為親水性,使處理液的保持力變大。藉此,能夠抑制處理液因自重而滴下。In addition, the wall surface of the second
<4.基板W的處理> 以下,對如所述般構成的基板處理裝置100中基板W的處理的一例進行說明。以下的各處理藉由控制部60對各部進行控制來進行。<4. Processing of substrate W> Hereinafter, an example of processing of the substrate W in the
當藉由主搬運機器人103將基板W搬入至腔室10內時,基板保持部20藉由多個夾持銷22而水平地保持所搬入的基板W。然後,當驅動旋轉機構30的自旋馬達32時,使基板W開始旋轉。繼而,馬達42被驅動,處理液供給部40的第三配管部413朝與基板W的上表面相向的處理位置移動。接著,使圖4的第一閥453及第二閥454打開,從而自第三配管部413朝向基板W的上表面吐出硫酸與過氧化氫水的混合液即SPM清洗液。SPM清洗液的溫度例如設為150℃~200℃。When the substrate W is carried into the
於吐出規定時間的SPM清洗液後,僅關閉第一閥453,從而停止硫酸的供給。藉此,進行自第三配管部413僅吐出硫酸過氧化氫水的所謂的「過水擠出處理」。所述過水擠出處理是以洗掉流路內殘留的硫酸成分,防止停止處理液的供給後的來自第三配管部413的硫酸非預想的滴下為目的而進行。其後,當經過規定時間時,第二閥454亦被關閉,從而停止過氧化氫水的吐出。After the SPM cleaning solution has been discharged for a predetermined time, only the
於朝基板W的各種處理液的供給完成後,使基板W的表面乾燥。當基板W的乾燥處理結束時,解除多個夾持銷22對基板W的保持。其後,藉由主搬運機器人103將處理後的基板W自基板保持部20取出,並搬出至腔室10的外部。After the supply of various processing liquids to the substrate W is completed, the surface of the substrate W is dried. When the drying process of the substrate W is completed, the holding of the substrate W by the plurality of clamping pins 22 is released. After that, the processed substrate W is taken out from the
如上所述,藉由將處理液吐出配管41的傾斜的第二配管流路442的壁面設為親水性,能夠提高第二配管流路442的壁面處的處理液的保持力。而且,能夠防止由第二配管流路442的壁面所保持的處理液因自重而滴下。其結果,能夠精度良好地處理基板W的表面。尤其,於本例中所示的SPM清洗液的比重較(例如較純水)高,且,表面張力較(例如較純水)低。此種高比重且低表面張力的藥液極容易產生因自重而致的滴下。但是,於此種基板處理裝置100中,藉由將第二配管流路442的壁面設為親水性,能夠防止此種藥液的因自重而致的滴下。As described above, by making the wall surface of the inclined second
<5.變形例> 以上,已對本發明的實施方式進行說明,但是本發明並不限定於所述實施方式。<5. Modifications> The embodiments of the present invention have been described above, but the present invention is not limited to the above-mentioned embodiments.
使壁面成為親水性的流路不限定於所述的實施方式的第二配管流路442。使壁面成為親水性的流路只要至少為較吐出口41A更靠上游側,且相對於鉛垂方向而傾斜,並且上游側的端部位於較下游側的端部更高的位置的流路即可。The flow path for making the wall surface hydrophilic is not limited to the second
圖7是變形例的處理液吐出配管46的局部剖面圖。FIG. 7 is a partial cross-sectional view of a processing
圖7的處理液吐出配管46包括第一配管部461、第二配管部462、及第三配管部463。第一配管部461為沿著水平方向延伸的部位。第二配管部462為位於第一配管部461的下游側,且相對於鉛垂方向而傾斜的直線狀的部位。第二配管部462的上游側的端部連接於第一配管部461的下游側的端部。第二配管部462的下游側的端部位於較第二配管部462的上游側的端部更靠下方處。第三配管部463為位於第二配管部462的下游側,且沿著水平方向延伸的部位。第三配管部463的上游側的端部連接於第二配管部462的下游側的端部。於第三配管部463的下游側的端部設置吐出口46A。第三配管部463為本發明的「第一直線流路」的一例。The processing
處理液吐出配管46於內部具有供處理液流通的流路47。流路47包括:第一配管流路471、第二配管流路472及第三配管流路473。The processing
第一配管流路471形成於第一配管部461的內部,且為沿著水平方向延伸的直線流路。圖4所說明的回吸配管43連接於第一配管部461。第一配管流路471的壁面即第一配管部461的內壁面461A為疏水性。The first
第二配管流路472形成於第二配管部462的內部,且為相對於鉛垂方向而傾斜的流路。第二配管流路472位於第一配管流路471的下游側。第二配管流路472的上游側端部的位置高於第二配管流路472的下游側端部的位置。第二配管流路472的壁面即第二配管部462的內壁面462A為親水性。與所述實施方式同樣地,第二配管流路472的壁面於第二配管流路472內充滿水的狀態下,藉由將處理液吐出配管46浸漬於鹽酸中,而成為親水性。第二配管流路472為本發明的「親水性流路」的一例。The second
第三配管流路473形成於第三配管部463的內部,且為沿著水平方向延伸的直線流路。第三配管流路473位於第二配管流路472的下游側。第三配管流路473的壁面即第三配管部463的內壁面463A為疏水性。The third
於所述構成的處理液吐出配管46中,與所述實施方式的處理液吐出配管41同樣地,亦由傾斜的第二配管流路472的壁面保持處理液。藉此,防止處理液的因自重而致的滴下。In the processing
再者,於所述實施形態及圖7的變形例中,將傾斜的第二配管流路472的壁面整體設為親水性,但只要傾斜的第二配管流路472的壁面的至少一部分為親水性即可。該情況下,只要將水密封於第二配管流路472中的欲成為親水性的部分的壁面內,並且將處理液吐出配管浸漬於鹽酸中即可。In addition, in the above-mentioned embodiment and the modification of FIG. 7, the entire wall surface of the inclined second
另外,使流路的壁面成為親水性的方法可為浸漬於藥液以外的方法。另外,使流路的壁面成為親水性的方法亦可為粗面化以外的方法。進而,於所述實施方式及圖7的變形例中,將位於第二配管流路442、第二配管流路472的上游的第一配管流路441、第一配管流路471的壁面設為疏水性,但亦可設為親水性。另外,將第一配管部411、第二配管部412、及第三配管部413設為不同的零件,可僅將應使壁面具有親水性的配管浸漬於鹽酸中。In addition, the method of making the wall surface of the flow path hydrophilic may be a method other than immersion in a chemical liquid. In addition, the method of making the wall surface of the flow path hydrophilic may be a method other than roughening. Furthermore, in the above-mentioned embodiment and the modification of FIG. 7, the wall surfaces of the first
進而,於所述的說明中,各配管可不必相對於所定義的方向(鉛垂方向或水平方向)平行地延伸。例如,圖6的第三配管部413可相對於鉛垂方向而稍微傾斜。Furthermore, in the above description, each pipe does not have to extend in parallel to the defined direction (vertical direction or horizontal direction). For example, the
關於基板處理裝置100的細節部分的構成,可以與本申請案的各圖不同。另外,亦可以將所述實施方式及變形例中所出現的各元件,在不產生矛盾的範圍內適當加以組合。The detailed configuration of the
10‧‧‧腔室11‧‧‧處理空間12‧‧‧側壁13‧‧‧頂板部14‧‧‧底板部15‧‧‧風機過濾器單元16‧‧‧排氣導管20‧‧‧基板保持部21‧‧‧自旋底座22‧‧‧夾持銷23‧‧‧夾持銷切換機構30‧‧‧旋轉機構31‧‧‧馬達蓋32‧‧‧自旋馬達33‧‧‧支撐軸40‧‧‧處理液供給部41、46‧‧‧處理液吐出配管41A、46A‧‧‧吐出口42‧‧‧馬達43‧‧‧回吸配管44、47‧‧‧流路45‧‧‧供液部50‧‧‧處理液收集部51‧‧‧內杯體52‧‧‧中杯體53‧‧‧外杯體60‧‧‧控制部61‧‧‧處理器62‧‧‧記憶體63‧‧‧儲存部100‧‧‧基板處理裝置101‧‧‧分度器102‧‧‧處理單元103‧‧‧主搬運機器人330‧‧‧軸芯411、461‧‧‧第一配管部411A、412A、413A、461A、462A、463A‧‧‧內壁面412、462‧‧‧第二配管部413、463‧‧‧第三配管部441、471‧‧‧第一配管流路442、472‧‧‧第二配管流路443、473‧‧‧第三配管流路451‧‧‧硫酸供給源452‧‧‧過氧化氫水供給源453‧‧‧第一閥454‧‧‧第二閥500‧‧‧升降機構510‧‧‧第一引導板511‧‧‧第一排液槽512‧‧‧第二排液槽513‧‧‧第三排液槽520‧‧‧第二引導板530‧‧‧第三引導板P‧‧‧電腦程式W‧‧‧基板10‧‧‧Chamber 11‧‧‧Processing space 12‧‧‧Side wall 13‧‧‧Top plate 14‧‧‧Bottom plate 15‧‧‧Fan filter unit 16‧‧‧Exhaust duct 20‧‧‧Substrate holding Section 21‧‧‧Spin base 22‧‧‧Clamp pin 23‧‧‧Clamp pin switching mechanism 30‧‧‧Rotation mechanism 31‧‧‧Motor cover 32‧‧‧Spin motor 33‧‧‧Support shaft 40 ‧‧‧Processing liquid supply part 41, 46‧‧‧Processing liquid discharge pipe 41A, 46A‧‧‧Discharge outlet 42‧‧‧Motor 43‧‧‧Suction pipe 44, 47‧‧‧Flow path 45‧‧‧Suction Liquid part 50‧‧‧Process liquid collection part 51‧‧‧Inner cup 52‧‧‧Middle cup 53‧‧‧Outer cup 60‧‧‧Control part 61‧‧‧Processor 62‧‧‧Memory 63 ‧‧‧Storage part 100‧‧‧Substrate processing device 101‧‧‧Indexer 102‧‧‧Processing unit 103‧‧‧Main transport robot 330‧‧‧Axle core 411,461‧‧‧First piping part 411A, 412A, 413A, 461A, 462A, 463A‧‧‧Inner wall surface 412, 462‧‧‧Second piping part 413, 463‧‧‧Third piping part 441, 471‧‧‧First piping flow path 442, 472‧‧‧ The second piping flow path 443, 473‧‧‧The third piping flow path 451‧‧‧Sulfuric acid supply source 452‧‧‧Hydrogen peroxide water supply source 453‧‧‧The first valve 454‧‧‧The second valve 500‧‧‧ Lifting mechanism 510‧‧‧First guide plate 511‧‧‧First drainage tank 512‧‧‧Second drainage tank 513‧‧‧Third drainage tank 520‧‧‧Second guide plate 530‧‧‧Second guide plate 530‧‧‧ Three guide board P‧‧‧computer program W‧‧‧base board
圖1是基板處理裝置的平面圖。 圖2是處理單元的平面圖。 圖3是處理單元的縱剖面圖。 圖4是表示與處理液吐出配管連接的供液部的一例的圖。 圖5是表示控制部與處理單元內的各部的連接的框圖。 圖6是處理液吐出配管的局部剖面圖。 圖7是變形例的處理液吐出配管的局部剖面圖。Fig. 1 is a plan view of a substrate processing apparatus. Fig. 2 is a plan view of the processing unit. Fig. 3 is a longitudinal sectional view of the processing unit. Fig. 4 is a diagram showing an example of a liquid supply unit connected to a processing liquid discharge pipe. Fig. 5 is a block diagram showing the connection between the control unit and each unit in the processing unit. Fig. 6 is a partial cross-sectional view of a processing liquid discharge pipe. Fig. 7 is a partial cross-sectional view of a processing liquid discharge pipe according to a modification.
41‧‧‧處理液吐出配管 41‧‧‧Processing liquid discharge piping
41A‧‧‧吐出口 41A‧‧‧Exit
44‧‧‧流路 44‧‧‧Flow Path
411‧‧‧第一配管部 411‧‧‧First Piping Department
411A‧‧‧內壁面 411A‧‧‧Inner wall
412‧‧‧第二配管部 412‧‧‧Second Piping Department
412A‧‧‧內壁面 412A‧‧‧Inner wall
413‧‧‧第三配管部 413‧‧‧The third piping department
413A‧‧‧內壁面 413A‧‧‧Inner wall
441‧‧‧第一配管流路 441‧‧‧The first piping flow path
442‧‧‧第二配管流路 442‧‧‧Second piping flow path
443‧‧‧第三配管流路 443‧‧‧Third piping flow path
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