CN119028861A - Nozzle device and cleaning device for cleaning back side of wafer - Google Patents
Nozzle device and cleaning device for cleaning back side of wafer Download PDFInfo
- Publication number
- CN119028861A CN119028861A CN202310610372.5A CN202310610372A CN119028861A CN 119028861 A CN119028861 A CN 119028861A CN 202310610372 A CN202310610372 A CN 202310610372A CN 119028861 A CN119028861 A CN 119028861A
- Authority
- CN
- China
- Prior art keywords
- gas
- liquid
- channel
- wafer
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 105
- 239000007788 liquid Substances 0.000 claims abstract description 215
- 238000000034 method Methods 0.000 claims description 24
- 238000001035 drying Methods 0.000 abstract description 24
- 238000012545 processing Methods 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 212
- 235000012431 wafers Nutrition 0.000 description 69
- 239000012530 fluid Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a nozzle device and a cleaning device for cleaning the back surface of a wafer. The nozzle device comprises a fixing piece, at least one liquid channel and at least one gas channel; each liquid channel is provided with a liquid input port and a liquid output port respectively, and each gas channel is provided with a gas input port and a gas output port respectively; the liquid channel is used for conveying liquid; the gas channel is used for conveying gas; the fixing member is configured to fix the liquid outlet and the gas outlet of the liquid passage; wherein, the level of gas delivery outlet is higher than the level of mounting up end. The invention solves the problem that liquid easily enters the gas outlet and the gas channel for providing the drying gas during the wafer cleaning, effectively prevents the phenomenon that the liquid etches the back of the wafer during the drying by the drying gas after the wafer back cleaning, and improves the processing yield of the wafer; while solving the problem of contamination of the liquid entering the gas channel for supplying the drying gas.
Description
Technical Field
The invention belongs to the technical field of integrated circuit equipment, and particularly relates to a nozzle device for cleaning the back of a wafer and a cleaning device.
Background
Megasonic cleaning technology plays a vital role in the field of semiconductor cleaning as a representative of ultra-precise cleaning nano-scale cleaning technology. The megasonic cleaning technology can be used for cleaning Silicon wafers, glass masks such as GaAs (gallium arsenide) and liquid crystal glass, ultra-precise cleaning of hard disks, read-write heads of the hard disks, semiconductor components, optical masks, thin film magnetic heads and other brittle materials, and precise cleaning in advanced packaging fields such as TSV (Through-Silicon-Via) etching cleaning, UBM (Under bump metallization-Bump Metallization)/rerouting layer (RDL, reDistributionLayer) cleaning, bonding cleaning and the like. With further development of research, megasonic cleaning technology is finding increasing application in the production of semiconductors and electronic devices.
In the semiconductor production process, when the wafer is cleaned by utilizing cleaning equipment, the cleaned wafer needs to be dried in order to facilitate the normal operation of the next process, the water outlet of the nozzle for cleaning the back surface of the wafer and the air outlet of the nozzle for drying the wafer of the cleaning device in the prior art are integrated into the same structural part through the fixing piece, the water outlet of the nozzle for cleaning the back surface of the wafer of the cleaning device in the structure, the air outlet of the nozzle for drying the wafer and the upper end surface of the fixing piece are all positioned on the same horizontal height, the fixing piece and the nozzle are not rotated in the process, so that part of liquid for cleaning the wafer is easily accumulated on the fixing piece, when the accumulated liquid is enough, the liquid can enter the nozzle for drying the wafer and a gas channel connected with the nozzle for drying, when the wafer is dried by the drying gas through the nozzle for drying the wafer, the residual liquid in the nozzle for drying the previous process is sprayed out along with the drying gas, thereby etching the back surface of the wafer and further affecting the yield of the wafer.
Disclosure of Invention
In order to prevent liquid for cleaning a wafer from entering a gas channel through a gas outlet and affecting the drying effect and the processing yield of the wafer, the invention provides a nozzle device and a cleaning device for cleaning the back of the wafer.
In a first aspect, the present invention provides a nozzle apparatus for wafer backside cleaning, comprising a fixture, at least one liquid channel, and at least one gas channel; each liquid channel is provided with a liquid input port and a liquid output port respectively, and each gas channel is provided with a gas input port and a gas output port respectively; the liquid channel is used for conveying liquid; the gas channel is used for conveying gas; the fixing member is configured to fix the liquid outlet and the gas outlet of the liquid passage; the horizontal height of the gas outlet is higher than that of the upper end face of the fixing piece.
According to a specific implementation of the embodiment of the application, the level of the gas outlet is higher than the level of the liquid outlet.
According to a specific implementation manner of the embodiment of the application, the gas output port is arranged at the top port of the gas channel.
According to a specific implementation manner of the embodiment of the application, the gas outlet is arranged on the side wall of the gas channel.
According to a specific implementation of an embodiment of the present application, the buffer tank is further connected to the gas channel to contain the liquid flowing into the gas channel.
According to a specific implementation manner of the embodiment of the application, the buffer tank further comprises a first gas supply channel and a second gas supply channel which are respectively connected with the buffer tank, so that the gas enters the buffer tank through the first gas supply channel and is transmitted into the gas channel through the second gas supply channel.
According to a specific implementation manner of the embodiment of the application, the buffer tank further comprises a liquid discharge channel which is connected with the buffer tank, and a liquid discharge valve is arranged on the liquid discharge channel.
According to a specific implementation manner of the embodiment of the application, the buffer tank further comprises a liquid level controller, wherein the liquid level controller is arranged in the buffer tank and used for detecting and controlling the liquid level in the buffer tank.
According to a specific implementation manner of the embodiment of the application, the wafer cleaning device further comprises a control unit, wherein the control unit is used for controlling the gas to continuously flow into the gas channel in the wafer back surface cleaning process.
In a second aspect, the present invention provides a nozzle device for cleaning a back surface of a wafer, including a fixing member, at least one liquid channel and at least one gas channel, where each liquid channel is provided with a liquid input port and a liquid output port, and each gas channel is provided with a gas input port and a gas output port, respectively; the liquid channel is used for conveying liquid; the gas channel is used for conveying gas; the fixing member is configured to fix the liquid outlet and the gas outlet of the liquid passage; the gas inlet of the gas channel is connected with a buffer tank to contain liquid flowing into the gas channel.
According to a specific implementation manner of the embodiment of the application, the wafer cleaning device further comprises a control unit, wherein the control unit is used for controlling the gas to continuously flow into the gas channel in the wafer back surface cleaning process.
In a third aspect, the present invention provides a nozzle device for cleaning a back surface of a wafer, including a fixing member, at least one liquid channel and at least one gas channel, where each liquid channel is provided with a liquid input port and a liquid output port, and each gas channel is provided with a gas input port and a gas output port, respectively; the liquid channel is used for conveying liquid; the gas channel is used for conveying gas; the fixing member is configured to fix the liquid outlet and the gas outlet of the liquid passage; the wafer back cleaning device further comprises a control unit, wherein the control unit controls the gas to continuously flow into the gas channel in the wafer back cleaning process.
In a fourth aspect, the present invention provides a cleaning apparatus comprising a nozzle apparatus for wafer backside cleaning as described in any of the preceding claims.
According to the nozzle device and the cleaning device for cleaning the back of the wafer, the problem that liquid easily enters the gas output port and the gas channel for providing the drying gas during cleaning the wafer is solved by designing the nozzle device, the phenomenon that the back of the wafer is etched by the liquid during drying by the drying gas after cleaning the back of the wafer is effectively prevented, and the processing yield of the wafer is improved; while solving the problem of contamination of the liquid entering the gas channel for supplying the drying gas. Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view showing a structure of a cleaning apparatus in an embodiment;
FIG. 2 is a schematic view showing a structure of a nozzle device for wafer backside cleaning in an embodiment of the present invention;
FIG. 3 shows a schematic view of a cleaning apparatus comprising the nozzle apparatus for wafer backside cleaning of FIG. 2;
FIG. 4 is a schematic view showing the structure of another embodiment of the cleaning device according to the embodiment of the present invention;
fig. 5 is a schematic view showing the structure of a cleaning apparatus provided with a buffer tank in an embodiment of the present invention;
fig. 6 is a schematic view showing a structure of a cleaning apparatus in which a buffer tank is provided in a rotating shaft in an embodiment of the present invention; and
Fig. 7 shows a schematic structural view of a further embodiment of the cleaning device according to an embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a cleaning device in an embodiment. As shown in fig. 1, the substrate cleaning apparatus includes a chuck 1100 and a rotation shaft 1200 fixed to the chuck 1100. The rotation shaft 1200 is connected to a rotation driver (not shown). The rotation driver drives the rotation shaft 1200 and the chuck 1100 to rotate. Chuck 1100 has a holding unit 1300 for holding wafer 1500. The rotation shaft 1200 is hollow and fixed at the center of the bottom of the chuck 1100. The rotary shaft 1200 incorporates a nozzle device for cleaning the back surface of the wafer. As shown in fig. 1, the nozzle device for wafer backside cleaning includes: a holder 14000, a liquid channel 1402, and a gas channel 1404, the liquid channel 1402 and the gas channel 1404 passing through the rotation shaft 1200 and the chuck 1100, respectively, which are hollow inside, to reach under the wafer 1500. The function of the liquid outlet is the same as the function of the nozzle for cleaning the back surface of the wafer by the cleaning device, and the function of the gas outlet is the same as the function of the drying nozzle. The liquid channel 1402 is provided with a liquid inlet 14041 and a liquid outlet 14011 correspondingly; the gas channel 1404 is provided with a gas input port 14043 and a gas output port 14013, respectively. The liquid output port 14011 and the gas output port 14013 are fixed by the fixing member 14000, and the liquid output port 14011 and the gas output port 14013 are maintained at the same level as the upper end face of the fixing member 14000. A liquid delivery line (not shown) is connected to the liquid input 14041, and a gas delivery line 1800 is connected to the gas input 14043. During the process, the liquid transferred by the liquid transfer pipeline is sprayed onto the back surface of the wafer 1500 through the liquid input port 14041, the liquid channel 1402 and the liquid output port 14011, so as to clean the back surface of the wafer 1500; at the end of the cleaning process, the wafer 1500 needs to be dried, and the drying gas transferred through the gas transfer line 1800 is injected onto the back surface of the wafer 1500 through the gas inlet 14043, the gas channel 1404, and the gas outlet 14013, thereby drying the back surface of the wafer 1500. In the actual process, the number of the liquid channels may be set according to actual requirements, and similarly, each liquid channel is provided with at least one liquid input port and at least one liquid output port in a matching manner, and two liquid channels, namely a liquid channel 1402 and a liquid channel 1403, are provided in this embodiment, and similarly to the liquid channel 1402, the liquid channel 1403 is provided with a liquid input port 14042 and a liquid output port 14012 corresponding to each other.
With continued reference to fig. 1, when the wafer 1500 is cleaned, liquid enters the liquid channels 1402, 1403 through the liquid input ports 14041, 14042 respectively and then flows out through the liquid output ports 14011, 14012 respectively, and the back surface of the wafer 1500 is rinsed, in this process, most of the liquid is thrown away by the centrifugal force of the wafer 1500 that is continuously rotating, but a small portion of the liquid falls back onto the fixing member 14000 due to gravity, while the fixing member 14000 is not rotating during the process, even if a small portion of the liquid falls back onto the fixing member 14000, liquid is accumulated, when the amount of liquid accumulated is large enough, the liquid easily flows back into the liquid output ports 14011, 14012 and the gas output port 14013 located at the same height, and the liquid entering the gas output port 14013 easily enters the gas channel 1404 through the gas output port 14013, and when the wafer is dried by the drying gas, the liquid in the gas channel 1404 is ejected from the gas output port 14013 together with the drying gas, and thus the wafer 1500 is etched, and the yield of the wafer is affected.
The present invention therefore proposes a nozzle device and a cleaning device for cleaning the back surface of a wafer, wherein the cleaning device of the present invention has a structure substantially the same as the cleaning device in fig. 1, except that the cleaning device comprises the nozzle device for cleaning the back surface of the wafer. The nozzle device for cleaning the back of the wafer solves the problem that the drying effect and the processing yield of the wafer are affected when liquid enters a gas channel for providing drying gas during cleaning the wafer.
Referring to fig. 2 and 3, fig. 2 is a schematic structural diagram of a nozzle device for cleaning a back surface of a wafer according to an embodiment of the application; fig. 3 shows a schematic structural view of a cleaning apparatus including the nozzle apparatus for wafer backside cleaning of fig. 2. The nozzle device for cleaning the back surface of the wafer comprises at least one liquid channel, at least one gas channel and a fixing piece for fixing the liquid output port and the gas output port, and the specific number of the liquid channels and the gas channels is not limited.
Specifically, as shown in fig. 2, in the present embodiment, the nozzle device for wafer back surface cleaning includes two liquid passages 2402, 2403, one gas passage 2404, and one fixing member 24000; the fixing member 24000 is used for fixing the liquid channel outlet and the gas channel outlet; the fluid channels 2402, 2403 are each configured to transport a fluid, preferably each fluid channel can be configured to supply a different fluid, such as deionized water, SC-1, SC-2, etc., for wafer backside cleaning; the gas channel 2404 is used to transport a gas, particularly a dry gas, such as nitrogen or an inactive gas. When there are multiple gas channels, each gas channel may also be used to transport the same or different gases. As shown in fig. 2, the liquid and gas channels are both straight channels, each having an inlet and an outlet. Fig. 2 is not intended to limit the specific shape, size of the liquid channels and gas channels. In other embodiments, the liquid and gas passages may also be elbows, or shaped pipes, such as profiled pipes. Each liquid channel is respectively provided with at least one liquid input port and at least one liquid output port. In the embodiment shown in fig. 2, the liquid channel 2402 is provided with a liquid input port 24041 and a liquid output port 24011, and the liquid channel 2403 is provided with a liquid input port 24042 and a liquid output port 24012. In other embodiments, a fluid channel may refer to a channel that is a combination of channels, where the number of fluid input and fluid output may be 1-to-many, many-to-1, many-to-many, etc.
In the nozzle device of the application, each gas channel is respectively provided with at least one gas input port and at least one gas output port. In the embodiment shown in fig. 2, the nozzle device for wafer back surface cleaning is provided with a gas channel 2404, and the gas channel 2404 is provided with a gas input port 24043 and a gas output port 24013 correspondingly. In other embodiments, a gas channel may refer to a channel formed by combining several channels, and the number relationship between the gas input port and the gas output port may be 1 to many, many to 1, many to many, etc. Wherein the level of all the gas outlets may be the same or different, and the level of all the liquid outlets may be the same or different. In the nozzle device of the present application, in order to prevent liquid from flowing back into the gas channel 2404 during the process, the level of all the gas outlets is higher than the level of the upper end face of the fixing member to which it is fixed.
Further, the level of the gas outlet is higher than the level of the liquid outlet. When there are a plurality of gas channels and a plurality of liquid channels, or when the gas channels have a plurality of gas outlets and the liquid channels have a plurality of liquid outlets, the level of all the gas outlets is higher than the level of the liquid outlets.
In this embodiment, as shown in fig. 2, the level of the two liquid outlets 24011, 24012 is equal to the level of the upper end surface of the fixing member 24000, and the level of the gas outlet 24013 is higher than the level of the two liquid outlets 24011, 24012 and the upper end surface of the fixing member 24000.
With the above design, referring to fig. 3, when the cleaning process is performed, the liquid flows into the liquid channels 2402 and 2403 through the liquid input ports 24041 and 24042, and then flows out through the liquid output ports 24011 and 24012, respectively, so that the back surface of the wafer 3500 is rinsed, and in this process, even if part of the liquid falls back onto the upper end surface of the fixing member 24000 due to gravity to be accumulated, because the gas output port 24013 is not in the same level with the liquid output ports 24011 and 24012, even if the liquid flows back, the liquid flows back to the liquid channels 2402 and 2403 through the liquid output ports 24011 and 24012, and does not enter the gas channel 2404 through the gas output port 24013.
When the gas outlet 24013 is arranged, it can be arranged at the top of the gas channel 2404 or on the side wall of the gas channel 2404. In the example shown in fig. 3, the gas outlet 24013 is disposed at the top of the gas channel 2404, and the level of the gas outlet 24013 is higher than the level of the liquid outlets 24011, 24012 and the level of the upper end surface of the fixing member 24000. Referring to fig. 4, fig. 4 is a schematic structural diagram of another embodiment of a cleaning apparatus according to an embodiment of the present invention, in which a gas outlet in a nozzle apparatus for cleaning a wafer back surface is disposed at a sidewall of a gas channel. In the example shown in fig. 4, the level of the gas outlet 24013 is higher than the level of the two liquid outlets 24011, 24012 and the level of the upper end surface of the fixing member 24000, and when the gas outlet 24013 is disposed on the side wall of the gas channel 2404, the top port of the gas channel 2404 is closed. The gas outlets 24013 may be disposed on the side walls of the gas channel 2404 at equal intervals, or may be disposed on the side walls of the gas channel 2404 at unequal intervals. At this time, the gas outlet 24013 is a through hole, the shape of which includes, but is not limited to, a circle, a rectangle, a diamond, an ellipse, and the like. The plurality of circular holes distributed at equal intervals on the wall circumference of the gas channel 2404 in fig. 4 represent a plurality of gas outlets 24013, and are not intended to limit the specific shape, size, and spacing between adjacent gas outlets 24013. According to the gas outlet 24013 of the embodiment shown in fig. 4, the inflow of liquid into the gas channel 2404 can be effectively avoided, and the function of the gas channel 2404 for outputting dry gas to the back surface of the wafer 3500 is not affected.
It should be noted that the number of the liquid channels may be set according to actual requirements, for example, the number of the liquid channels may also be set to one, three or more than three; the number of the gas passages may be set according to actual demands, for example, the number of the gas passages may be set to two or more.
Further, please refer to fig. 5; fig. 5 is a schematic view showing the structure of a cleaning device provided with a buffer tank in the embodiment of the invention. In the embodiment shown in fig. 5, a buffer tank 5600 is connected between the gas channel 2404 and the gas transfer line to contain liquid that flows back into the gas channel.
Specifically, the buffer tank 5600 is connected with a first gas supply passage 5601 and a second gas supply passage 5602, and gas enters the inside of the buffer tank 5600 via the first gas supply passage 5601 and is transported into the gas passage 2404 via the second gas supply passage 5602, and is ejected outward through the gas output port 24013. It should be appreciated that the first gas supply passage 5601 in this embodiment corresponds to the gas delivery line 3800 described above. In this embodiment, the buffer tank 5600 can prevent the liquid from flowing back to the gas delivery line 3800.
The present application does not limit the installation position of the buffer tank 5600. As shown in fig. 5, the buffer tank 5600 should be disposed below the gas passage 2404 so that liquid that may fall into the gas passage 2404 falls into the buffer tank 5600 by gravity. It should be understood that fig. 5 is not intended to limit the arrangement of the gas outlets 24013, and fig. 5 illustrates a solution in which the gas outlets 24013 are disposed on the sidewall of the gas channel 2404. In other embodiments, when the buffer tank 5600 is disposed below the gas channel 2404, the gas output port 24013 may also be disposed at a top port of the gas channel 2404.
As shown in fig. 5, further, a drain channel 5603 is provided at the bottom of the buffer tank 5600, and a drain valve 5604 is provided on the drain channel 5603, and the liquid flowing back into the buffer tank 5600 is controlled by opening and closing the drain valve 5604, so that the liquid can be drained through the drain channel 5603. In the actual process, the liquid discharge valve 5604 can be selected to be normally open, and once liquid flows back into the buffer tank 5600, the liquid can be directly discharged; alternatively, the drain valve 5604 may be opened periodically to achieve the purpose of periodic drain.
Further, a liquid level control device 5700 is provided in the buffer tank 5600 for detecting and controlling the liquid level in the buffer tank 5600. The fluid level control device 5700 includes a fluid level sensor and a controller. In a specific use process, a liquid discharge value is preset for a liquid level sensor, the liquid level sensor arranged in the buffer tank 5600 in a process detects the actual condition of the liquid level in the buffer tank 5600, when the liquid level in the buffer tank 5600 reaches the preset liquid discharge value, a controller sends a liquid discharge message, and at the moment, a liquid discharge valve 5604 is opened to discharge the liquid in the buffer tank 5600 out of the buffer tank 5600. It should be noted that the liquid level sensor needs to be disposed below the connection portion 5000 between the first gas supply channel 5601 and the buffer tank 5600, so as to better monitor the amount of the liquid flowing back inside the buffer tank 5600, and drain the liquid in time, so as to avoid the liquid flowing back into the first gas supply channel 5601 due to excessive liquid.
Furthermore, in a specific use process, an early warning value can be set for the liquid level sensor in advance, and when the liquid level sensor detects that the liquid level in the buffer tank 5600 exceeds the early warning value, the controller sends out an alarm message.
In another embodiment, referring to fig. 6, a buffer tank 5600 may be disposed in the hollow rotation shaft 3200. Specifically, when the buffer tank 5600 is disposed in the rotary shaft 3200, the first gas supply channel 5601 and the second gas supply channel 5602 are both disposed in the rotary shaft, at this time, the gas channel 2404 is shortened, the buffer tank 5600 is closer to the gas output port 24013, so that the effect of recovering the returned liquid can be better achieved, and the negative effect of the back flow of the polluted liquid can be further reduced. In this embodiment, the drain valve 5604 provided in the drain passage 5603 connected to the buffer tank is still required to be provided outside the rotation shaft 3200 in order to facilitate the drain operation.
In another embodiment, the nozzle device for wafer back surface cleaning further comprises a control unit, wherein the control unit continuously introduces gas into the gas channel during wafer back surface cleaning, and the gas channel is kept to be always in gas communication. Specifically, referring to fig. 1, when the cleaning process is performed, the control unit (not shown) controls the gas to continuously flow into the gas channel 1404, and simultaneously, the liquid enters the liquid channels 1402, 1403 through the liquid input ports 14041, 14042 and then flows out through the liquid output ports 14011, 14012, so as to rinse the back surface of the wafer 1500. In this process, even if there is a small amount of liquid on the fixing member 14000, because the gas outlet 14013 is always ejecting the gas outward, a gas curtain is formed at the gas outlet 24013, and the small amount of liquid will preferentially flow back to the liquid passages 1402, 1403 through the liquid outlets 14011, 14012 due to the blocking effect of the gas curtain, and will not enter the gas passage 1404 through the gas outlet 14013.
In another embodiment, referring to fig. 7, fig. 7 is a schematic structural diagram of a further embodiment of a cleaning device according to the embodiment of the present invention, wherein the gas output port is equal to the liquid output port in height, and the gas input port is connected to a buffer tank. As shown in fig. 7, when the level of the gas outlet 24013 is equal to the level of the liquid outlets 24011, 24012, a buffer tank 5600 may be connected below the gas channel 2404 to hold the liquid flowing into the gas channel and prevent the back-flowing liquid from entering the gas delivery line 3800 to cause contamination. The relevant design of the buffer tank 5600 is the same as described above, and will not be described here.
Further, during wafer back surface cleaning, gas is continuously introduced into the gas channels, so that the gas channels 2404 always have gas circulation. When the level of the liquid outlets 24011, 24012 and the level of the gas outlet 24013 are equal to the level of the upper end surface of the fixing member 34000, even if part of the liquid falls back onto the fixing member 34000 due to gravity in the process, because the gas outlet 24013 always has gas sprayed outwards, a gas curtain is formed at the gas outlet 24013, which has the effect of blocking a small amount of liquid from entering the gas channel 2404 through the gas outlet 24013, and even if the blocking effect of the gas curtain does not completely block the liquid flowing back, the liquid flowing back part of the liquid enters the gas channel 2404 and flows into the buffer tank 5600, and is discharged through the liquid discharge channel 5603.
It should be noted that, in the foregoing embodiments, it should be understood by those skilled in the art that the technical features of the foregoing embodiments may be combined arbitrarily, and for brevity, all of the possible combinations of the technical features of the foregoing embodiments are not described, however, all of them should be considered as being within the scope of the disclosure. For example, the solution of continuously introducing gas into the gas channel in the above embodiment may be combined with the solution that the gas outlet is provided at the top port of the gas channel; or can be combined with the gas outlet arranged on the side wall of the gas channel. For another example, the solution of continuously introducing gas into the gas channel may be combined with the solution of providing a buffer tank below the gas channel, and once the blocking effect of the gas curtain does not completely block the backflow liquid, the backflow liquid partially enters the gas channel and also flows into the buffer tank and is discharged through the liquid discharge channel.
Although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (13)
1. A nozzle assembly for wafer backside cleaning, comprising:
Comprises a fixing piece, at least one liquid channel and at least one gas channel;
Each liquid channel is provided with a liquid input port and a liquid output port respectively, and each gas channel is provided with a gas input port and a gas output port respectively; the liquid channel is used for conveying liquid; the gas channel is used for conveying gas; the fixture is configured to secure the liquid outlet and the gas outlet;
The horizontal height of the gas outlet is higher than that of the upper end face of the fixing piece.
2. The nozzle assembly for wafer backside cleaning of claim 1, wherein:
the level of the gas outlet is higher than the level of the liquid outlet.
3. The nozzle assembly for wafer backside cleaning of claim 1, wherein:
the gas outlet is arranged at the top port of the gas channel.
4. The nozzle assembly for wafer backside cleaning of claim 1, wherein: the gas outlet is arranged on the side wall of the gas channel.
5. The nozzle assembly for wafer backside cleaning of claim 1, wherein:
a buffer tank is also included and is connected to the gas channel to contain liquid flowing into the gas channel.
6. The nozzle assembly for wafer backside cleaning of claim 5, wherein:
The buffer tank is characterized by further comprising a first gas supply channel and a second gas supply channel which are respectively connected with the buffer tank so that the gas enters the buffer tank through the first gas supply channel and is transmitted into the gas channel through the second gas supply channel.
7. The nozzle assembly for wafer backside cleaning of claim 6, wherein:
The buffer tank is connected with the liquid storage tank, and the liquid storage tank is provided with a liquid storage valve.
8. The nozzle assembly for wafer backside cleaning of claim 7, wherein:
the liquid level controller is arranged in the buffer tank and used for detecting and controlling the liquid level in the buffer tank.
9. The nozzle assembly for wafer backside cleaning of claim 1, wherein: the wafer back cleaning device further comprises a control unit, wherein the control unit controls the gas to continuously flow into the gas channel in the wafer back cleaning process.
10. A nozzle assembly for wafer backside cleaning, comprising:
The device comprises a fixing piece, at least one liquid channel and at least one gas channel, wherein each liquid channel is respectively and correspondingly provided with a liquid input port and a liquid output port, and each gas channel is respectively and correspondingly provided with a gas input port and a gas output port; the liquid channel is used for conveying liquid; the gas channel is used for conveying gas; the fixing member is configured to fix the liquid outlet and the gas outlet of the liquid passage; the gas inlet of the gas channel is connected with a buffer tank to contain liquid flowing into the gas channel.
11. The nozzle assembly for wafer backside cleaning of claim 10, wherein:
the wafer back cleaning device further comprises a control unit, wherein the control unit controls the gas to continuously flow into the gas channel in the wafer back cleaning process.
12. A nozzle assembly for wafer backside cleaning, comprising:
The device comprises a fixing piece, at least one liquid channel and at least one gas channel, wherein each liquid channel is respectively and correspondingly provided with a liquid input port and a liquid output port, and each gas channel is respectively and correspondingly provided with a gas input port and a gas output port; the liquid channel is used for conveying liquid; the gas channel is used for conveying gas; the fixing member is configured to fix the liquid outlet and the gas outlet of the liquid passage;
the wafer back cleaning device further comprises a control unit, wherein the control unit controls the gas to continuously flow into the gas channel in the wafer back cleaning process.
13. A cleaning device, characterized in that: comprising a nozzle arrangement for wafer backside cleaning according to any of the claims 1-12.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310610372.5A CN119028861A (en) | 2023-05-26 | 2023-05-26 | Nozzle device and cleaning device for cleaning back side of wafer |
TW113117795A TW202447818A (en) | 2023-05-26 | 2024-05-14 | Nozzle device and cleaning device for cleaning back side of wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310610372.5A CN119028861A (en) | 2023-05-26 | 2023-05-26 | Nozzle device and cleaning device for cleaning back side of wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
CN119028861A true CN119028861A (en) | 2024-11-26 |
Family
ID=93528036
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202310610372.5A Pending CN119028861A (en) | 2023-05-26 | 2023-05-26 | Nozzle device and cleaning device for cleaning back side of wafer |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN119028861A (en) |
TW (1) | TW202447818A (en) |
-
2023
- 2023-05-26 CN CN202310610372.5A patent/CN119028861A/en active Pending
-
2024
- 2024-05-14 TW TW113117795A patent/TW202447818A/en unknown
Also Published As
Publication number | Publication date |
---|---|
TW202447818A (en) | 2024-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI643284B (en) | Substrate treatment device | |
US7389783B2 (en) | Proximity meniscus manifold | |
KR102525270B1 (en) | Substrate processing apparatus and substrate processing method | |
WO2020110709A1 (en) | Substrate processing device and substrate processing method | |
JP2016063074A (en) | Substrate processing apparatus | |
TW202131386A (en) | Substrate processing apparatus substrate processing method and recording medium | |
TW201919779A (en) | Substrate processing device, substrate processing method, and storage medium | |
KR20150110273A (en) | Substrate processing apparatus | |
TW202100255A (en) | Unit for supplying liquid, apparatus and method for treating substrate having the unit | |
TWI718458B (en) | Treatment liquid discharge pipe and substrate treatment device | |
JP4312997B2 (en) | Substrate processing apparatus, substrate processing method, and nozzle | |
JP6538927B2 (en) | Substrate processing equipment | |
CN119028861A (en) | Nozzle device and cleaning device for cleaning back side of wafer | |
JP2022068831A (en) | Substrate processing apparatus | |
TWI717675B (en) | Substrate processing device | |
JP4020741B2 (en) | Gas-liquid separation and recovery equipment in liquid processing equipment | |
TWI700740B (en) | Substrate processing apparatus and substrate processing method | |
JP7170511B2 (en) | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD | |
KR102620707B1 (en) | Liquid membrane forming apparatus, and liquid processing apparatus and substrate processing equipment including the same | |
JP2004089946A (en) | Cleaning device | |
WO2024135031A1 (en) | Substrate processing apparatus and substrate processing method | |
CN116833138A (en) | Substrate backside cleaning assembly and substrate cleaning device | |
KR101336719B1 (en) | Apparatus to clean substrate | |
TW202040291A (en) | Substrate processing apparatus, substrate processing method, and semiconductor manufacturing mehtod | |
JP2013071056A (en) | Slit nozzle and substrate processing device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |