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TWI705741B - 貼附微型元件至基板上的方法 - Google Patents

貼附微型元件至基板上的方法 Download PDF

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Publication number
TWI705741B
TWI705741B TW108134277A TW108134277A TWI705741B TW I705741 B TWI705741 B TW I705741B TW 108134277 A TW108134277 A TW 108134277A TW 108134277 A TW108134277 A TW 108134277A TW I705741 B TWI705741 B TW I705741B
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Taiwan
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layer
micro
adhesion layer
electrode
component
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TW108134277A
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English (en)
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TW202029857A (zh
Inventor
陳立宜
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薩摩亞商美科米尚技術有限公司
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Abstract

一種貼附微型元件至基板上的方法。該方法包含：形成導電墊於基板上；形成增高黏合層於導電墊上；在包含蒸氣的環境中調節增高黏合層的溫度至一選定溫度點或噴灑氣體至增高黏合層上，使得至少一部分蒸氣或氣體凝結並在增高黏合層上形成液體層；放置微型元件於增高黏合層的上方，使得微型元件接觸液體層，並由位於微型元件和增高黏合層之間的液體層所產生的毛細力抓住微型元件，其中微型元件包含電極，電極面向增高黏合層；以及蒸發液體層，使得電極貼附至增高黏合層並與導電墊電性連接。

Description

貼附微型元件至基板上的方法
本揭露是關於一種貼附微型元件至基板上的方法。
此處的陳述僅提供與本揭露有關的背景信息，而不必然地構成現有技術。
近年來，微型元件在許多應用領域都逐漸興起。在與微型發光元件相關的各個技術層面中，轉移製程是微型元件要達到商業化的最重要挑戰任務之一。轉移製程當中的一個重要議題是將微型元件黏合至基板上。
本揭露的一些實施例提出了一種貼附微型元件至基板上的方法。該方法包含：形成導電墊於基板上；形成增高黏合層於導電墊上；在包含蒸氣的環境中調節增高黏合層的溫度至一選定溫度點或噴灑氣體至增高黏合層上，使得至少一部分蒸氣或氣體凝結並在增高黏合層上形成液體層；放置微型元件於增高黏合層的上方，使得微型元件接觸液體層，並由位於 微型元件和增高黏合層之間的液體層所產生的毛細力抓住微型元件，其中微型元件包含電極，電極面向增高黏合層；以及蒸發液體層，使得電極貼附至增高黏合層並與導電墊電性連接。
為了讓本揭露的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
100‧‧‧方法
110、120、130、140、150‧‧‧操作
200、200A、200C、200D‧‧‧貼附結構
200B‧‧‧黏合結構
210‧‧‧基板
220、220a、220b‧‧‧導電墊
230、230a、230b‧‧‧增高黏合層
240‧‧‧液體層
250‧‧‧微型元件
250T‧‧‧頂表面
252‧‧‧電極
254‧‧‧第一型半導體層
256‧‧‧主動層
258‧‧‧第二型半導體層
260‧‧‧黏附層
350‧‧‧微型元件(覆晶型LED)
352a‧‧‧第一電極
352b‧‧‧第二電極
354‧‧‧第一型半導體層
356‧‧‧主動層
358‧‧‧第二型半導體層
450‧‧‧微型元件(垂直型LED)
452a‧‧‧第一電極
452b‧‧‧第二電極
4502‧‧‧電流控制層
454‧‧‧第一型半導體層
456‧‧‧主動層
458‧‧‧第二型半導體層
L‧‧‧長度
F‧‧‧剪切力
O1‧‧‧第一開口
O2‧‧‧第二開口
當結合隨附圖式閱讀時，自以下詳細描述將最佳地理解本揭露之態樣。應注意，根據工業中之標準實務，各特徵未必依比例繪示。實際上，可出於論述清晰之目的而增減所說明的特徵之尺寸。
第1圖繪示本揭露一些實施例中貼附微型元件至基板上的方法的流程圖。
第2A圖繪示本揭露一些實施例中貼附微型元件至基板上的方法中某一中間階段的剖面示意圖。
第2B圖繪示本揭露一些實施例中貼附微型元件至基板上的方法中某一中間階段的剖面示意圖。
第2C圖繪示本揭露一些實施例中貼附微型元件至基板上的方法中某一中間階段的剖面示意圖。
第2D圖繪示本揭露一些實施例中貼附微型元件至基板上的方法中某一中間階段的剖面示意圖。
第2E圖繪示本揭露一些實施例中貼附微型元件至基板上的方法中某一中間階段的剖面示意圖。
第3圖繪示本揭露一些實施例中液體層蒸發後的貼附結構的剖面示意圖。
第4圖繪示本揭露一些實施例中液體層蒸發後的黏合結構的剖面示意圖。
第5圖繪示本揭露一些實施例中液體層蒸發後的貼附結構的剖面示意圖。
第6圖繪示本揭露一些實施例中液體層蒸發後的貼附結構的剖面示意圖。
為更進一步闡述本揭露為達成預定目的所採取的技術手段及功效，以下結合圖式及較佳實施例，對依據本揭露提出的貼附微型元件至基板上的方法，其具體實施方式、結構、方法、步驟、特徵及其功效，詳細說明如後。
有關本揭露的前述及其他技術內容、特點及功效，在以下配合參考圖式的較佳實施例的詳細說明中將可清楚呈現。通過具體實施方式的說明，當可對本揭露為達成預定目的所採取的技術手段及功效更加深入且具體的瞭解，然而所附圖式僅是提供參考與說明之用，並非用來對本揭露加以限制。
為簡化圖式，一些現有已知慣用的結構與元件在圖式中將以簡單示意的方式繪示。並且，除非有其他表示，在不同圖式中相同的元件符號可視為相對應的元件。這些圖式的繪示是為了清楚表達這些實施方式中各元件之間的連接關係，並非繪示各元件的實際尺寸。
參考第1圖和第2A圖至第2E圖。第1圖繪示本揭露一些實施例中貼附微型元件至基板上的方法100的流程圖。第2A圖至第2E圖繪示第1圖的方法100中不同中間階段的剖面示意圖。方法100從操作110開始，形成導電墊220於基板210上(參考第2A圖)。方法100接著進行操作120，形成增高黏合層230於導電墊220上(參考第2B圖)。方法100接著進行操作130，在包含蒸氣的環境中調節增高黏合層230的溫度至一選定溫度點或噴灑氣體至增高黏合層230上，使得增高黏合層230上形成液體層240(參考第2C圖)。方法100接著進行操作140，放置微型元件250於增高黏合層230的上方，使得微型元件250接觸液體層240(參考第2D圖)。方法100接著進行操作150，蒸發液體層240，使得微型元件250貼附至增高黏合層230並與導電墊220電性連接(參考第2E圖)。
參考第2A圖和第2B圖，在基板210上形成導電墊220以及在導電墊220上形成增高黏合層230。在一些實施例中，導電墊220可包含銅(copper，Cu)，但不以此為限。在一些實施例中，增高黏合層230包含錫(tin，Sn)。在一些實施例中，增高黏合層230的厚度的範圍在約1微米和約10微米之間。此厚度為在平行於Z方向量測的厚度，Z方向垂直於基板210的延伸方向(亦即，Y方向)。
參考第2C圖，形成液體層240於增高黏合層230上。在一些實施例中，液體層240包含水，但不以此為限。在一些實施例中，選定溫度點為露點，使得水可凝結並形成在增高黏合層230上。增高黏合層230可穩定地交換熱至蒸氣，從 而使蒸氣凝結以形成液體層240於增高黏合層230上。在一些實施例中，將氣體噴灑至增高黏合層230上。在一些實施例中，噴灑至增高黏合層230上的氣體的水蒸氣壓高於環境水蒸氣壓，使其在不需要調整增高黏合層230之溫度的情況下，液體層240即可形成在增高黏合層230上。在一些實施例中，氣體主要由氮和水所組成。
參考第2D圖，放置微型元件250於增高黏合層230的上方。在一些實施例中，當微型元件250接觸液體層240時，微型元件250由液體層240所產生的毛細力抓住，液體層240位於微型元件250和增高黏合層230之間。在一些實施例中，當毛細力抓住微型元件250時，位於微型元件250和增高黏合層230之間的液體層240的厚度小於微型元件250的厚度。這使得液體層240可抓住微型元件250，且微型元件250的位置保持在基板210上的可控區域內。在一些實施例中，微型元件250包含電極252。電極252面向增高黏合層230。電極252可包含銅，但不以此為限。電極252亦可包含黏附材料，例如鉻(chromium，Cr)或鈦(titanium，Ti)，但不以此為限。在一些實施例中，電極252的厚度小於或等於2微米。在一些實施例中，電極252的厚度小於或等於約0.5微米，從而在前述放置之前製造微型元件250時可避免彎曲生長基板和磊晶層。在一些實施例中，微型元件250包含第一型半導體層254、主動層256和第二型半導體層258。第一型半導體層254接觸電極252。主動層256接觸第一型半導體層254。第二型半導體層258通過主動層256與第一型半導體層254接合。第一型 半導體層254可以是p型半導體層，但不以此為限。第二型半導體層258可以是n型半導體層，但不以此為限。在一些實施例中，微型元件250亦可為垂直型發光二極體，例如，垂直共振腔面射型雷射(vertical-cavity surface-emitting laser，VCSEL)。
參考第2E圖，蒸發液體層240。在如第2D圖所示的液體層240蒸發後，形成如第2E圖所示的貼附結構200。蒸發液體層240可以是以升高增高黏合層230的溫度的方式達成，使得電極252在液體層240蒸發後黏附固定至增高黏合層230。此時，微型元件250貼附於增高黏合層230並電性接觸增高黏合層230。所得到的貼附結構200可防止由於施加在微型元件250上的剪切力F而可能造成的損壞。如同第2E圖的示例，當剪切力F施加在微型元件250上時，例如在平行於Y方向的方向上施加在微型元件250的頂表面250T上，產生了將微型元件250與基板210分開的力矩，力矩的值是剪切力F乘以長度L。長度L是指量測微型元件250被剪切力F施加的一角和液體層240蒸發的界面(亦即，電極252和增高黏合層230之間的界面)所得到的長度。上述實施例中所描述的貼附微型元件250至基板210上的方法100可以縮短長度L，原因在於增高黏合層230預先形成在導電墊220上而不是形成在微型元件250上。因此，可以減少如上所述由剪切力F產生並施加在微型元件250上的力矩，貼附結構200變得較為穩固，從而改善後續製程的良率。
參考第3圖。第3圖繪示本揭露一些實施例中液體 層240蒸發後的貼附結構200A的剖面示意圖。第3圖所描述的實施例和第2A圖至第2E圖所描述的實施例的不同點在於，在第圖3所描述的實施例中，於形成導電墊220之前，在基板210上形成黏附層260。
參考第4圖。第4圖繪示本揭露一些實施例中液體層240蒸發後的黏合結構200B的剖面示意圖。在一些實施例中，當液體層240蒸發後，增高黏合層230的溫度進一步升高至高於增高黏合層230的熔點。在一些實施例中，當液體層240蒸發後，增高黏合層230的溫度進一步升高至高於增高黏合層230和微型元件250之電極252的共晶點。第4圖的黏合結構200B顯示前述升高溫度至高於前述熔點和前述共晶點所得到的結構。
參考第5圖。第5圖繪示本揭露一些實施例中液體層240蒸發後的貼附結構200C的剖面示意圖。在一些實施例中，微型元件350為覆晶型發光二極體(light-emitting diode，LED)。覆晶型LED 350包含第一型半導體層354、主動層356、第二型半導體層358、第一電極352a和第二電極352b。第二型半導體層358通過主動層356與第一型半導體層354接合。第一電極352a電性連接至第一型半導體層354。第二電極352b電性連接至第二型半導體層358。兩個獨立的導電墊220a和220b設置在基板210上，兩個獨立的增高黏合層230a和230b分別設置在導電墊220a和220b上。導電墊220a和220b彼此分隔開。增高黏合層230a和230b彼此分隔開。在一些實施例中，第一型半導體層354為p型半導體層，第二型 半導體層358為n型半導體層。導電墊220a用以接收正供應電壓，導電墊220b用以接收接地電壓或負供應電壓。藉由執行類似於第1圖之方法100的方法，覆晶型LED 350可以黏附固定至增高黏合層230a和230b。在一些實施例中，微型元件350的電極352a和352b實質上共平面。
參考第6圖。第6圖繪示本揭露一些實施例中液體層240蒸發後的貼附結構200D的剖面示意圖。在一些實施例中，微型元件450為垂直型發光二極體(LED)。垂直型LED 450包含第一型半導體層454、主動層456、第二型半導體層458、電流控制層4502、第一電極452a和第二電極452b。第二型半導體層458通過主動層456與第一型半導體層454接合。電流控制層4502與第一型半導體層454接合。電流控制層4502具有第一開口O1和第二開口O2。第一電極452a經由第一開口O1電性連接至第一型半導體層454。第二電極452b經由第二開口O2電性連接至第一型半導體層454。基板210具有至少兩個獨立的導電墊220a和220b。導電墊220a和220b彼此分隔開。在一些實施例中，導電墊220a用以接收第一電壓，導電墊220b用以接收第二電壓。第一電壓和第二電壓可以是相同或不同的電壓。藉由執行類似於第1圖所示的方法100的方法，第一電極452a和第二電極452b可分別黏附固定至增高黏合層230a和230b。類似地，第一電極452a和第二電極452b可分別貼附至增高黏合層230a和230b。
綜上所述，本揭露的實施例提供一種貼附微型元件至基板上的方法，當中的增高黏合層可防止因施加在微型元 件上的剪切力而可能造成的損壞。
以上所述，僅是本揭露的較佳實施例而已，並非對本揭露作任何形式上的限制，雖然本揭露已以較佳實施例揭露如上，然而並非用以限定本揭露，任何熟悉本專業的技術人員，在不脫離本揭露技術方案範圍內，當可利用上述揭示的技術內容作出些許更動或修飾為等同變化的等效實施例，但凡是未脫離本揭露技術方案的內容，依據本揭露的技術實質對以上實施例所作的任何簡單修改、等同變化與修飾，均仍屬於本揭露技術方案的範圍內。
200‧‧‧貼附結構
210‧‧‧基板
220‧‧‧導電墊
230‧‧‧增高黏合層
250‧‧‧微型元件
250T‧‧‧頂表面
L‧‧‧長度
F‧‧‧剪切力

Claims (15)

  1. 一種貼附微型元件至基板上的方法，包含：形成一導電墊於該基板上；形成一增高黏合層於該導電墊上；在包含一蒸氣的環境中調節該增高黏合層的溫度至一選定溫度點或噴灑包含水的一氣體至該增高黏合層上，使得至少一部分該蒸氣或該氣體凝結並在該增高黏合層上形成包含水的一液體層；放置一微型元件於該增高黏合層的上方，使得該微型元件接觸該液體層，並由位於該微型元件和該增高黏合層之間的該液體層所產生的毛細力抓住微型元件，其中該微型元件包含電極，該電極面向該增高黏合層；以及蒸發該液體層，使得該電極貼附至該增高黏合層並與該導電墊電性連接。
  2. 如請求項1所述的方法，更包含在形成該導電墊之前形成一黏附層於該基板上。
  3. 如請求項1所述的方法，該增高黏合層的厚度的範圍在約1微米和約10微米之間。
  4. 如請求項1所述的方法，該增高黏合層包含錫(tin，Sn)。
  5. 如請求項1所述的方法，該電極的厚度小於 或等於2微米。
  6. 如請求項1所述的方法，該電極的厚度小於或等於0.5微米。
  7. 如請求項1所述的方法，該液體層包含水。
  8. 如請求項1所述的方法，該選定溫度點為露點。
  9. 如請求項1所述的方法，蒸發該液體層包含升高該增高黏合層的溫度，使得該電極在該液體層蒸發後黏附固定至該增高黏合層。
  10. 如請求項1所述的方法，更包含在蒸發該液體層後升高該增高黏合層的溫度至高於該增高黏合層的熔點。
  11. 如請求項1所述的方法，更包含在蒸發該液體層後升高該增高黏合層的溫度至高於該增高黏合層和該電極的共晶點。
  12. 如請求項1所述的方法，當該毛細力抓住該微型元件時，位於該微型元件和該增高黏合層之間的該液體層的厚度小於該微型元件的厚度。
  13. 如請求項1所述的方法，該電極的材料包含銅(copper，Cu)。
  14. 如請求項1所述的方法，該氣體的水蒸氣壓高於環境水蒸氣壓。
  15. 如請求項14所述的方法，該氣體主要由氮和水所組成。
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