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TWI660500B - Organic light-emitting diode display device - Google Patents

Organic light-emitting diode display device Download PDF

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Publication number
TWI660500B
TWI660500B TW106114136A TW106114136A TWI660500B TW I660500 B TWI660500 B TW I660500B TW 106114136 A TW106114136 A TW 106114136A TW 106114136 A TW106114136 A TW 106114136A TW I660500 B TWI660500 B TW I660500B
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layer
organic
light emitting
emitting diode
display device
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TW106114136A
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TW201836141A (en
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劉振宇
盧宏傑
林熙乾
龔立偉
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宸鴻光電科技股份有限公司
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/86Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/86Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一種有機發光二極體顯示裝置,包含基板、下電極、第一有機層、發光層、第二有機層、上電極以及光學阻絕層。下電極設置於基板上。第一有機層設置於下電極上。發光層設置於第一有機層上。第二有機層設置於發光層上。上電極設置於第二有機層上,其中上電極之材質為透明導電材質或半透明導電材質。光學阻絕層設置於發光層相對於第二有機層之一側。 An organic light emitting diode display device includes a substrate, a lower electrode, a first organic layer, a light emitting layer, a second organic layer, an upper electrode, and an optical barrier layer. The lower electrode is disposed on the substrate. The first organic layer is disposed on the lower electrode. The light emitting layer is disposed on the first organic layer. The second organic layer is disposed on the light emitting layer. The upper electrode is disposed on the second organic layer, and the material of the upper electrode is a transparent conductive material or a translucent conductive material. The optical barrier layer is disposed on one side of the light emitting layer opposite to the second organic layer.

Description

有機發光二極體顯示裝置 Organic light emitting diode display device

本發明是有關於一種有機發光二極體顯示裝置。 The invention relates to an organic light emitting diode display device.

有機發光二極體(Organic Light Emitting Diode,OLED)為採用發光性之有機化合物的發光元件,具有自發光特性,且其薄型化、顯示品質以及省電特性皆優於液晶顯示器(Liquid Crystal Display,LCD)。由於有機發光二極體具有廣視角、高反應速度、超薄等特性,使得有機發光二極體面板應用範圍愈來愈廣泛。 Organic Light Emitting Diode (OLED) is a light-emitting element using a light-emitting organic compound. It has self-luminous properties, and its thickness, display quality, and power-saving characteristics are better than those of a liquid crystal display (Liquid Crystal Display, LCD). Due to the wide viewing angle, high response speed, and ultra-thin characteristics of organic light emitting diodes, the application range of organic light emitting diode panels is becoming wider and wider.

因為有機發光二極體顯示裝置為自發光,在室內或低環境光的條件下,將具備有高對比、高色彩飽和度的顯示特性。然而,如果使用者處於高照度的環境光源下,因為有機發光二極體本身的亮度將低於外界環境光,且上、下電極為金屬材質,具有高反射率,於是由有機發光二極體顯示裝置所反射的外界光,將會嚴重影響顯示裝置的畫面品質。 Because the organic light emitting diode display device is self-luminous, it will have display characteristics with high contrast and high color saturation under the conditions of indoor or low ambient light. However, if the user is under a high-illumination ambient light source, the organic light-emitting diode itself will have lower brightness than the external ambient light, and the upper and lower electrodes are made of metal and have high reflectance. The external light reflected by the display device will seriously affect the picture quality of the display device.

如第1圖所繪示,現有技術的有機發光二極體顯示器包含一上基板30、一下基板40、一薄膜電晶體層50 及有機發光二極體發光結構10。其中,薄膜電晶體層50設置在下基板40上,有機發光二極體發光結構10設置於薄膜電晶體層50上,並且上基板30設置於有機發光二極體發光結構10上。而為了因應前述之問題,有機發光二極體顯示器通常會在有機發光二極體發光結構10的上方額外設置光學抗反射結構20,更具體來講,也就是在上基板30的上表面上設置有光學抗反射結構20,其中,光學抗反射結構20包含線性偏光片21與圓偏光片23(其會產生四分之一波長的相位差)。於是,外部光線LO首先會通過線性偏光片21與圓偏光片23,接著被有機發光二極體發光結構10的上電極11與下電極13反射,然後再通過圓偏光片23,最後外部光線LO將會被線性偏光片21完全吸收,因而避免外部光線LO影響顯示裝置的畫面品質。但是,在此同時,有機發光二極體發光結構10的發光層12所產生的內部光線LI射出後,亦會通過光學抗反射結構20,因為光學抗反射結構20的穿透率約為40%,因此會使顯示裝置的發光效率大幅下降。另外,額外設置光學抗反射結構20亦會增加整體裝置的厚度與重量。 As shown in FIG. 1, the prior art organic light emitting diode display includes an upper substrate 30, a lower substrate 40, and a thin film transistor layer 50. And an organic light emitting diode light emitting structure 10. The thin film transistor layer 50 is disposed on the lower substrate 40, the organic light emitting diode light emitting structure 10 is disposed on the thin film transistor layer 50, and the upper substrate 30 is provided on the organic light emitting diode light emitting structure 10. In order to cope with the foregoing problems, an organic light emitting diode display usually includes an additional optical anti-reflection structure 20 above the organic light emitting diode light emitting structure 10, more specifically, it is provided on the upper surface of the upper substrate 30. There is an optical anti-reflection structure 20, wherein the optical anti-reflection structure 20 includes a linear polarizer 21 and a circular polarizer 23 (which will cause a phase difference of a quarter wavelength). Therefore, the external light LO first passes through the linear polarizer 21 and the circular polarizer 23, and is then reflected by the upper electrode 11 and the lower electrode 13 of the organic light emitting diode light emitting structure 10, and then passes through the circular polarizer 23, and finally the external light LO It will be completely absorbed by the linear polarizer 21, so that the external light LO will not affect the picture quality of the display device. However, at the same time, after the internal light LI generated by the light-emitting layer 12 of the organic light-emitting diode light-emitting structure 10 is emitted, it will also pass through the optical anti-reflection structure 20 because the transmittance of the optical anti-reflection structure 20 is about 40%. Therefore, the luminous efficiency of the display device is greatly reduced. In addition, the additional provision of the optical anti-reflection structure 20 will also increase the thickness and weight of the overall device.

本發明之一技術態樣是在提供一種有機發光二極體顯示裝置,用以提升其明暗對比。 One technical aspect of the present invention is to provide an organic light emitting diode display device for improving its light-dark contrast.

根據本發明一實施方式,一種有機發光二極體顯示裝置,包含基板、下電極、第一有機層、發光層、第二有機層、上電極以及光學阻絕層。下電極設置於基板上。 第一有機層設置於下電極上。發光層設置於第一有機層上。第二有機層設置於發光層上。上電極設置於第二有機層上,其中上電極之材質為透明導電材質或半透明導電材質。光學阻絕層設置於發光層相對於第二有機層之一側。 According to an embodiment of the present invention, an organic light emitting diode display device includes a substrate, a lower electrode, a first organic layer, a light emitting layer, a second organic layer, an upper electrode, and an optical barrier layer. The lower electrode is disposed on the substrate. The first organic layer is disposed on the lower electrode. The light emitting layer is disposed on the first organic layer. The second organic layer is disposed on the light emitting layer. The upper electrode is disposed on the second organic layer, and the material of the upper electrode is a transparent conductive material or a translucent conductive material. The optical barrier layer is disposed on one side of the light emitting layer opposite to the second organic layer.

於本發明之一或多個實施方式中,光學阻絕層之材質為有機導電材質。 In one or more embodiments of the present invention, the material of the optical barrier layer is an organic conductive material.

於本發明之一或多個實施方式中,光學阻絕層之材質為石墨或石墨烯。 In one or more embodiments of the present invention, the material of the optical barrier layer is graphite or graphene.

於本發明之一或多個實施方式中,上電極之材質為氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋁鋅(AZO)、氧化鋁銦(AIO)、氧化銦(InO)、氧化鎵(Gallium Oxide,GaO)、奈米碳管、奈米銀絲、奈米銀顆粒或複合透明導電材料。 In one or more embodiments of the present invention, the material of the upper electrode is indium tin oxide (ITO), indium zinc oxide (IZO), zinc aluminum oxide (AZO), indium aluminum oxide (AIO), or indium oxide (InO). , Gallium Oxide (GaO), Nano carbon tubes, Nano silver wires, Nano silver particles or composite transparent conductive materials.

於本發明之一或多個實施方式中,光學阻絕層設置於下電極與第一有機層之間。 In one or more embodiments of the present invention, the optical barrier layer is disposed between the lower electrode and the first organic layer.

於本發明之一或多個實施方式中,光學阻絕層設置於第一有機層與發光層之間。 In one or more embodiments of the present invention, the optical barrier layer is disposed between the first organic layer and the light emitting layer.

於本發明之一或多個實施方式中,光學阻絕層具有傳輸電子/電洞或者控制電子/電洞注入的功能。 In one or more embodiments of the present invention, the optical barrier layer has a function of transmitting electrons / holes or controlling electron / hole injection.

於本發明之一或多個實施方式中,第一有機層及第二有機層分別為複合層結構。 In one or more embodiments of the present invention, the first organic layer and the second organic layer have a composite layer structure, respectively.

於本發明之一或多個實施方式中,第一有機層之材質及第二有機層之材質分別為有機導電材質或有機與無機的混合導電材質。 In one or more embodiments of the present invention, the material of the first organic layer and the material of the second organic layer are respectively an organic conductive material or an organic and inorganic mixed conductive material.

於本發明之一或多個實施方式中,下電極為透明導電材質或不透明導電材質。 In one or more embodiments of the present invention, the lower electrode is a transparent conductive material or an opaque conductive material.

根據本發明另一實施方式,一種有機發光二極體顯示裝置,包含基板、下電極、第一有機層、發光層、第二有機層以及上電極。下電極設置於基板上,其中該下電極之材質為不透明導電材質。第一有機層設置於下電極上。發光層設置於第一有機層上。第二有機層設置於發光層上。上電極設置於第二有機層上,其中上電極之材質為透明導電材質或半透明導電材質。 According to another embodiment of the present invention, an organic light emitting diode display device includes a substrate, a lower electrode, a first organic layer, a light emitting layer, a second organic layer, and an upper electrode. The lower electrode is disposed on the substrate, and the material of the lower electrode is an opaque conductive material. The first organic layer is disposed on the lower electrode. The light emitting layer is disposed on the first organic layer. The second organic layer is disposed on the light emitting layer. The upper electrode is disposed on the second organic layer, and the material of the upper electrode is a transparent conductive material or a translucent conductive material.

於本發明之一或多個實施方式中,下電極之材質為石墨、石墨烯、奈米碳管或有機金屬共蒸鍍的材料。 In one or more embodiments of the present invention, a material of the lower electrode is graphite, graphene, a carbon nanotube, or an organic metal co-evaporated material.

於本發明之一或多個實施方式中,下電極之材質為氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋁鋅(AZO)、氧化鋁銦(AIO)、氧化銦(InO)、氧化鎵(Gallium Oxide,GaO)、奈米碳管或奈米銀顆粒搭配石墨、石墨烯或黑色染料等光吸收材料的複合材料。 In one or more embodiments of the present invention, the material of the lower electrode is indium tin oxide (ITO), indium zinc oxide (IZO), zinc aluminum oxide (AZO), indium aluminum oxide (AIO), or indium oxide (InO). A composite material of Gallium Oxide (GaO), nano carbon tubes or nano silver particles with light absorbing materials such as graphite, graphene or black dye.

於本發明之一或多個實施方式中,下電極之材質為金屬搭配石墨、石墨烯或黑色染料等光吸收材料的複合材料。 In one or more embodiments of the present invention, the material of the lower electrode is a composite material of a metal and a light absorbing material such as graphite, graphene, or a black dye.

於本發明之一或多個實施方式中,第一有機層及第二有機層分別為複合層結構。 In one or more embodiments of the present invention, the first organic layer and the second organic layer have a composite layer structure, respectively.

於本發明之一或多個實施方式中,第一有機層之材質及第二有機層之材質分別為有機導電材質或有機與無機的混合導電材質。 In one or more embodiments of the present invention, the material of the first organic layer and the material of the second organic layer are respectively an organic conductive material or an organic and inorganic mixed conductive material.

本發明藉由使上電極皆為透明或半透明,並且在有機發光二極體顯示裝置的結構內部設計一層具有吸收光線的功能層,用來吸收來自外部環境產生的外部光線。避免外部光線反射而影響畫面品質,提升有機發光二極體顯示裝置的明暗對比。此外,由於本發明無需任何外掛於有機發光二極體顯示裝置外部的光學抗反射膜層或膜片,因此不會影響有機發光二極體顯示裝置的自發光效率,並且更可簡化產品厚度及減輕產品重量,降低設計及生產成本。 In the present invention, the upper electrode is made transparent or translucent, and a functional layer with light absorption is designed inside the structure of the organic light emitting diode display device to absorb external light generated from the external environment. Avoid the reflection of external light to affect the picture quality, and improve the light and dark contrast of the organic light emitting diode display device. In addition, since the present invention does not require any optical anti-reflection film layer or film externally mounted on the outside of the organic light emitting diode display device, it does not affect the self-luminous efficiency of the organic light emitting diode display device, and can further simplify product thickness and Reduce product weight and reduce design and production costs.

10‧‧‧有機發光二極體發光結構 10‧‧‧Organic light emitting diode light emitting structure

11‧‧‧上電極 11‧‧‧up electrode

12‧‧‧發光層 12‧‧‧ luminescent layer

13‧‧‧下電極 13‧‧‧ lower electrode

20‧‧‧光學抗反射結構 20‧‧‧Optical anti-reflection structure

21‧‧‧線性偏光片 21‧‧‧ linear polarizer

23‧‧‧圓偏光片 23‧‧‧ circular polarizer

30‧‧‧上基板 30‧‧‧ Upper substrate

40‧‧‧下基板 40‧‧‧ lower substrate

50‧‧‧主動電極陣列 50‧‧‧ Active electrode array

100‧‧‧有機發光二極體顯示裝置 100‧‧‧organic light emitting diode display device

110‧‧‧下基板 110‧‧‧ lower substrate

111‧‧‧薄膜電晶體層 111‧‧‧ thin film transistor layer

120‧‧‧下電極 120‧‧‧ lower electrode

130‧‧‧第一有機層 130‧‧‧first organic layer

140‧‧‧發光層 140‧‧‧Light-emitting layer

150‧‧‧第二有機層 150‧‧‧ second organic layer

160‧‧‧上電極 160‧‧‧up electrode

170‧‧‧光學阻絕層 170‧‧‧Optical barrier

180‧‧‧上基板 180‧‧‧ Upper substrate

L1、LO‧‧‧外部光線 L1, LO‧‧‧External light

L2、L3‧‧‧光線 L2, L3‧‧‧‧ Light

LI‧‧‧內部光線 LI‧‧‧Internal light

R、G、B‧‧‧子畫素 R, G, B ‧‧‧ sub pixels

第1圖繪示依照先前技術的有機發光二極體顯示裝置的剖面示意圖。 FIG. 1 is a schematic cross-sectional view of an organic light emitting diode display device according to the prior art.

第2圖繪示依照本發明一實施方式的有機發光二極體顯示裝置的剖面示意圖。 FIG. 2 is a schematic cross-sectional view of an organic light emitting diode display device according to an embodiment of the present invention.

第3圖繪示依照本發明一實施方式的單一畫素的上視示意圖。 FIG. 3 is a schematic top view of a single pixel according to an embodiment of the present invention.

第4圖繪示依照第3圖中沿AA’剖面線的剖面示意圖。 Fig. 4 is a schematic cross-sectional view taken along the line AA 'in Fig. 3;

第5圖繪示依照本發明另一實施方式的有機發光二極體顯示裝置的剖面示意圖。 FIG. 5 is a schematic cross-sectional view of an organic light emitting diode display device according to another embodiment of the present invention.

第6圖繪示依照本發明又一實施方式的有機發光二極體顯示裝置的剖面示意圖。 FIG. 6 is a schematic cross-sectional view of an organic light emitting diode display device according to another embodiment of the present invention.

以下將以圖式揭露本發明之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。 In the following, a plurality of embodiments of the present invention will be disclosed graphically. For the sake of clarity, many practical details will be described in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, in order to simplify the drawings, some conventional structures and components will be shown in the drawings in a simple and schematic manner.

第2圖繪示依照本發明一實施方式的有機發光二極體顯示裝置100的剖面示意圖。本發明不同實施方式提供一種有機發光二極體顯示裝置100。具體而言,有機發光二極體顯示裝置100為上發光式有機發光二極體顯示裝置。 FIG. 2 is a schematic cross-sectional view of an organic light emitting diode display device 100 according to an embodiment of the present invention. Various embodiments of the present invention provide an organic light emitting diode display device 100. Specifically, the organic light emitting diode display device 100 is a top-emitting organic light emitting diode display device.

如第2圖所繪示,一種有機發光二極體顯示裝置100包含下基板110、薄膜電晶體層111、下電極120、第一有機層130、發光層140、第二有機層150、上電極160、光學阻絕層170及上基板180。薄膜電晶體層111設置於下基板110上,並且下電極120設置於薄膜電晶體層111上。第一有機層130設置於下電極120上。發光層140設置於第一有機層130上。第二有機層150設置於發光層140上。上電極160設置於第二有機層150上,並與下電極120相對設置,其中上電極160之材質為透明導電材質或半透明導電材質。光學阻絕層170設置於發光層140相對於第二有機層150之一側。具體而言,本實施例的光學阻絕層170是設置於下電極120與第一有機層130之間。 As shown in FIG. 2, an organic light emitting diode display device 100 includes a lower substrate 110, a thin film transistor layer 111, a lower electrode 120, a first organic layer 130, a light emitting layer 140, a second organic layer 150, and an upper electrode. 160. The optical blocking layer 170 and the upper substrate 180. The thin film transistor layer 111 is disposed on the lower substrate 110, and the lower electrode 120 is provided on the thin film transistor layer 111. The first organic layer 130 is disposed on the lower electrode 120. The light emitting layer 140 is disposed on the first organic layer 130. The second organic layer 150 is disposed on the light emitting layer 140. The upper electrode 160 is disposed on the second organic layer 150 and is opposite to the lower electrode 120. The material of the upper electrode 160 is a transparent conductive material or a translucent conductive material. The optical blocking layer 170 is disposed on a side of the light emitting layer 140 opposite to the second organic layer 150. Specifically, the optical barrier layer 170 of this embodiment is disposed between the lower electrode 120 and the first organic layer 130.

由於上電極160為透明或半透明,因此自外部環境產生的外部光線L1將會穿過上基板180、上電極160、第二有機層150、發光層140及第一有機層130,之後再被光學阻絕層170吸收。另外,自發光層140所產生的光線,將會有一部分光線向下行進而被光學阻絕層170吸收(即光線L2),另外一部分光線向上行進而穿過上電極160,進而從上基板180射出有機發光二極體顯示裝置100(即光線L3)。於是,有機發光二極體顯示裝置100可以避免外部光線L1反射而影響畫面品質,因而提升有機發光二極體顯示裝置100的明暗對比。 Since the upper electrode 160 is transparent or translucent, the external light L1 generated from the external environment will pass through the upper substrate 180, the upper electrode 160, the second organic layer 150, the light emitting layer 140, and the first organic layer 130, and then be processed by The optical barrier layer 170 absorbs. In addition, part of the light generated from the light-emitting layer 140 will go downward and be absorbed by the optical blocking layer 170 (ie, the light L2), and another part of the light will travel upward and pass through the upper electrode 160, and then emit organic light from the upper substrate 180 Light-emitting diode display device 100 (ie, light L3). Therefore, the organic light emitting diode display device 100 can avoid the reflection of external light L1 and affect the picture quality, thereby improving the light-dark contrast of the organic light emitting diode display device 100.

對此,相較於其他有機發光二極體顯示裝置,本實施方式的有機發光二極體顯示裝置100並不需要設置其他額外的裝置(舉例來說,第1圖中包含設置於上基板30上之線性偏光片21與圓偏光片23的光學抗反射結構20)來避免外部光線L1反射而影響畫面品質,因此有機發光二極體顯示裝置100的厚度可以較薄,重量亦可較輕。 In this regard, compared with other organic light emitting diode display devices, the organic light emitting diode display device 100 of this embodiment does not need to be provided with other additional devices (for example, FIG. 1 includes an upper substrate 30). The optical anti-reflection structure 20 of the linear polarizer 21 and the circular polarizer 23 above is used to avoid reflection of external light L1 and affect the picture quality. Therefore, the thickness of the organic light emitting diode display device 100 can be thinner and lighter.

此外,由於光學阻絕層170設置於發光層140相對於第二有機層150之一側,因此光學阻絕層170亦可作為設置於下基板110上且位於下基板110與下電極120之間的薄膜電晶體層111的遮光層,以避免薄膜電晶體層111照光後,使薄膜電晶體產生光電流的相關缺陷。為更明確說明,請一併參考第3圖及第4圖,分別為本發明一實施方式的單一畫素的上視示意圖及該上視示意圖中沿AA’剖面線的剖面示意圖,其中網點區域為光學阻絕層170,虛線 所圍成的範圍為子畫素範圍。由第3圖及第4圖可以了解,由於本實施例的光學阻絕層170是設計為完整平面的不透光層,因此以上視角度來看,位於光學阻絕層170下方的薄膜電晶體層111可完全被遮擋而不可視,而位於光學阻絕層170上方的發光層140(例如包含三個子畫素R、G、B)則為可視,並運作來呈現色彩。本單一畫素的實施例是為說明光學阻絕層170作為薄膜電晶體層111的遮光層之作用,因此僅繪示出發光層140、光學阻絕層170及薄膜電晶體層111之間的疊層結構關係,有機發光二極體顯示裝置的其他功能層(如下電極120、第一有機層130等)則省略未繪示。 In addition, since the optical barrier layer 170 is disposed on one side of the light-emitting layer 140 opposite to the second organic layer 150, the optical barrier layer 170 can also serve as a thin film disposed on the lower substrate 110 and between the lower substrate 110 and the lower electrode 120. The light-shielding layer of the transistor layer 111 prevents the thin-film transistor from generating defects related to photocurrent after the thin-film transistor layer 111 is illuminated. For a clearer explanation, please refer to FIG. 3 and FIG. 4 together, which are a schematic top view of a single pixel according to an embodiment of the present invention and a cross-sectional view along the AA ′ section line in the top view, in which the dot area Is the optical barrier layer 170, the dotted line The enclosed range is the sub-pixel range. As can be understood from FIG. 3 and FIG. 4, since the optical barrier layer 170 of this embodiment is an opaque layer designed as a complete plane, the thin film transistor layer 111 located below the optical barrier layer 170 is viewed from the above perspective. It can be completely blocked but not visible, while the light emitting layer 140 (for example, containing three sub-pixels R, G, B) located above the optical blocking layer 170 is visible and operates to present colors. The embodiment of the single pixel is to explain the function of the optical barrier layer 170 as a light-shielding layer of the thin film transistor layer 111. Therefore, only the stack between the light emitting layer 140, the optical barrier layer 170, and the thin film transistor layer 111 is illustrated. For the structural relationship, other functional layers of the organic light emitting diode display device (such as the electrode 120, the first organic layer 130, and the like) are omitted and not shown.

進一步的,第一有機層130、第二有機層150與光學阻絕層170具有電子或電洞的傳輸或注入能力,用以傳輸下電極120與上電極160中的電子與電洞而使電子與電洞在發光層140中結合。換言之,在一些實施例中,第一有機層130以及第二有機層150可以分別採複合層結構的設計,而不限於只有實體一層的結構。舉例而言,第一有機層130可例如設計為包含電洞注入層、電洞傳輸層等多層結構的有機層;而第二有機層150可例如設計為包含電子注入層、電子傳輸層等多層結構的有機層。再者,第一有機層130及第二有機層150在設計上可分別選擇有機導電材質或者有機與無機混合導電材質來設計,在此並無加以限制。 Further, the first organic layer 130, the second organic layer 150, and the optical barrier layer 170 have the ability to transmit or inject electrons or holes, and are used to transfer the electrons and holes in the lower electrode 120 and the upper electrode 160 to make the electrons and Electric holes are combined in the light emitting layer 140. In other words, in some embodiments, the first organic layer 130 and the second organic layer 150 may adopt a design of a composite layer structure, not limited to a structure having only one physical layer. For example, the first organic layer 130 may be designed, for example, as an organic layer including a multi-layer structure such as a hole injection layer and a hole transport layer; and the second organic layer 150 may be, for example, designed as a multilayer including an electron injection layer, an electron transport layer, or the like. Structure of the organic layer. In addition, the first organic layer 130 and the second organic layer 150 may be designed by selecting an organic conductive material or an organic and inorganic mixed conductive material for design, which is not limited herein.

承上,因為光學阻絕層170同時具有吸收光線與傳輸電子/電洞或者控制電子/電洞注入的功能,因此光 學阻絕層170將可取代第一有機層130中具有類似功能的有機功能層,例如電子傳輸層、電子注入層、電洞傳輸層或電洞注入層,具體依據發光二極體顯示裝置100的設計態樣而定,在此並無加以限制。因而可以簡化製程。 Because the optical barrier layer 170 has the function of absorbing light and transmitting electrons / holes or controlling electron / hole injection, the light The scientific barrier layer 170 may replace an organic functional layer having a similar function in the first organic layer 130, such as an electron transport layer, an electron injection layer, a hole transport layer, or a hole injection layer, according to the light emitting diode display device 100. The design aspect is not limited here. Therefore, the process can be simplified.

具體而言,光學阻絕層170之材質為非金屬材質。更具體地說,光學阻絕層170之材質可為有機導電材質或無機導電材質。若光學阻絕層170之材質為有機導電材質,光學阻絕層170之材質可為有機小分子材質或有機高分子材質。若光學阻絕層170之材質為無機導電材質,光學阻絕層170之材質可為石墨或石墨烯。應了解到,以上所舉之光學阻絕層170之材質僅為例示,並非用以限制本發明,本發明所屬技術領域中具有通常知識者,應視實際需要,彈性選擇光學阻絕層170之材質。 Specifically, the material of the optical barrier layer 170 is a non-metallic material. More specifically, the material of the optical barrier layer 170 may be an organic conductive material or an inorganic conductive material. If the material of the optical barrier layer 170 is an organic conductive material, the material of the optical barrier layer 170 may be an organic small molecule material or an organic polymer material. If the material of the optical barrier layer 170 is an inorganic conductive material, the material of the optical barrier layer 170 may be graphite or graphene. It should be understood that the materials of the optical barrier layer 170 mentioned above are merely examples and are not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains should elastically select the materials of the optical barrier layer 170 according to actual needs.

具體而言,下基板110之材質可為玻璃或塑膠。塑膠可包括聚醯亞胺(PI)、聚丙烯(PP)、聚苯乙烯(PS)、丙烯腈-丁二烯-苯乙烯(ABS)、聚對苯二甲酸乙二酯(PET)、聚氯乙烯(PVC)、聚碳酸酯(PC)、聚乙烯(PE)、聚甲基丙烯酸甲酯(PMMA)、聚四氟乙烯(PTFE)等。應了解到,以上所舉之下基板110之材質僅為例示,並非用以限制本發明,本發明所屬技術領域中具有通常知識者,應視實際需要,彈性選擇下基板110之材質。 Specifically, the material of the lower substrate 110 may be glass or plastic. Plastics can include polyimide (PI), polypropylene (PP), polystyrene (PS), acrylonitrile-butadiene-styrene (ABS), polyethylene terephthalate (PET), polymer Vinyl chloride (PVC), polycarbonate (PC), polyethylene (PE), polymethyl methacrylate (PMMA), polytetrafluoroethylene (PTFE), etc. It should be understood that the materials of the lower substrate 110 mentioned above are merely examples and are not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains should flexibly select the materials of the lower substrate 110 according to actual needs.

具體而言,上電極160與下電極120之材質可為氧化銦錫(ITO)。但並不限於此,在其他實施方式中,上電極160與下電極120之材質可為氧化銦鋅(IZO)、氧化 鋁鋅(AZO)、氧化鋁銦(AIO)、氧化銦(InO)、氧化鎵(Gallium Oxide,GaO)、奈米碳管、奈米銀絲、奈米銀顆粒或是複合透明導電材料,如混和導電高分子以及奈米銀絲的透明導電材料。另外,下電極120之材質亦可為金屬例如銅,並且本實施例的下電極120可選擇採用透明導電材質或不透明導電材質的設計。 Specifically, the material of the upper electrode 160 and the lower electrode 120 may be indium tin oxide (ITO). However, it is not limited to this. In other embodiments, the material of the upper electrode 160 and the lower electrode 120 may be indium zinc oxide (IZO), oxide Aluminum zinc (AZO), aluminum indium (AIO), indium oxide (InO), gallium oxide (GaO), nano carbon tubes, nano silver wires, nano silver particles, or composite transparent conductive materials, such as Transparent conductive material mixed with conductive polymer and nano silver wire. In addition, the material of the lower electrode 120 may be metal, such as copper, and the lower electrode 120 of this embodiment may be designed with a transparent conductive material or an opaque conductive material.

第5圖繪示依照本發明另一實施方式的有機發光二極體顯示裝置100的剖面示意圖。如第5圖所繪示,本實施方式的有機發光二極體顯示裝置100與前述第2圖實施方式的有機發光二極體顯示裝置100大致相同,主要差異在於,本實施方式的有機發光二極體顯示裝置100的光學阻絕層170設置於第一有機層130與發光層140之間。 FIG. 5 is a schematic cross-sectional view of an organic light emitting diode display device 100 according to another embodiment of the present invention. As shown in FIG. 5, the organic light emitting diode display device 100 according to the present embodiment is substantially the same as the organic light emitting diode display device 100 according to the foregoing second embodiment, and the main difference is that the organic light emitting diode 2 The optical barrier layer 170 of the polar display device 100 is disposed between the first organic layer 130 and the light emitting layer 140.

第6圖繪示依照本發明又一實施方式的有機發光二極體顯示裝置100的剖面示意圖。如第6圖所繪示,本實施方式的有機發光二極體顯示裝置100與前述第2圖及第5圖實施方式的有機發光二極體顯示裝置100大致相同,主要差異在於,本實施方式的有機發光二極體顯示裝置100的下電極120之材質是例如採用可吸收光線的不透明導電材質來設計,如此一來,本實施方式的下電極120即具有吸收光線的效果,而可兼作為光學阻絕層。 FIG. 6 is a schematic cross-sectional view of an organic light emitting diode display device 100 according to another embodiment of the present invention. As shown in FIG. 6, the organic light emitting diode display device 100 of this embodiment is substantially the same as the organic light emitting diode display device 100 of the foregoing embodiments of FIGS. 2 and 5. The main difference is that this embodiment The material of the lower electrode 120 of the organic light emitting diode display device 100 is, for example, designed using an opaque conductive material that can absorb light. In this way, the lower electrode 120 of this embodiment has the effect of absorbing light and can also serve as Optical barrier.

具體而言,下電極120之材質可為石墨、石墨烯、奈米碳管或有機金屬共蒸鍍的材料(例如25%CuPC:25%DCJTB:50%Al)。或者,下電極120之材質可為石墨、石墨烯、奈米碳管等黑色導電材質搭配鎂銀合 金薄膜的混合結構。或者,下電極120之材質可為氧化銦錫、氧化銦鋅、氧化鋁鋅、氧化鋁銦、氧化銦、氧化鎵、奈米碳管或奈米銀顆粒等透明導電材質搭配石墨、石墨烯、黑色染色材料或碳材質之光吸收材料的複合材料。或者,下電極120之材質可為金屬搭配石墨、石墨烯、黑色染色材料或碳材質之光吸收材料的複合材料。 Specifically, the material of the lower electrode 120 may be graphite, graphene, carbon nanotubes, or an organic metal co-evaporated material (for example, 25% CuPC: 25% DCJTB: 50% Al). Alternatively, the material of the lower electrode 120 may be black conductive material such as graphite, graphene, and nano carbon tube, and magnesium silver alloy. Mixed structure of gold thin film. Alternatively, the material of the lower electrode 120 may be a transparent conductive material such as indium tin oxide, indium zinc oxide, zinc aluminum oxide, indium aluminum oxide, indium oxide, gallium oxide, nano carbon tube, or nano silver particles with graphite, graphene, Composite material of black dyed material or carbon light absorbing material. Alternatively, the material of the lower electrode 120 may be a metal combined with graphite, graphene, a black dyeing material, or a light absorbing material made of carbon.

承上所述,由於本實施方式的上電極160為透明或半透明,於是自外部環境產生的外部光線L1將會穿過上基板180、上電極160、第二有機層150、發光層140及第一有機層130,之後再被兼具光學阻絕效果的下電極120吸收。另外,自發光層140所產生的光線,將會有一部分光線向下行進而被兼具光學阻絕效果的下電極120吸收(即光線L2),另外一部分光線向上行進而穿過上電極160,進而從上基板180射出有機發光二極體顯示裝置100(即光線L3)。因此,本實施方式的有機發光二極體顯示裝置100在將下電極120設計為兼具有光學阻絕效果的情況下,可以避免外部光線L1反射而影響畫面品質,因而提升有機發光二極體顯示裝置100的明暗對比。 As mentioned above, since the upper electrode 160 of this embodiment is transparent or translucent, the external light L1 generated from the external environment will pass through the upper substrate 180, the upper electrode 160, the second organic layer 150, the light emitting layer 140, and The first organic layer 130 is then absorbed by the lower electrode 120 that also has an optical barrier effect. In addition, part of the light generated from the light-emitting layer 140 will go downward and be absorbed by the lower electrode 120 (ie, light L2), which also has an optical blocking effect, and another part of the light will travel upward and pass through the upper electrode 160, and then The upper substrate 180 emits the organic light emitting diode display device 100 (ie, the light L3). Therefore, when the organic light emitting diode display device 100 of this embodiment is designed to have an optical blocking effect, the organic light emitting diode display device 100 can avoid the reflection of external light L1 and affect the picture quality, thereby improving the organic light emitting diode display. Light and dark contrast of the device 100.

綜上所述,本發明在有機發光二極體顯示裝置的結構內部設計一層具有吸收光線的功能層,藉以避免外部光線反射而影響畫面品質,提升有機發光二極體顯示裝置的明暗對比。此外,由於無需設計任何外掛於有機發光二極體顯示裝置外部的光學抗反射膜層或膜片,因此不會影響有機發光二極體顯示裝置的自發光效率,並且更重 要的是可簡化產品厚度及減輕產品重量,降低設計及生產成本。 In summary, the present invention designs a layer with a function of absorbing light inside the structure of the organic light emitting diode display device, so as to avoid the reflection of external light and affect the picture quality, thereby improving the light-dark contrast of the organic light emitting diode display device. In addition, since there is no need to design any optical anti-reflection film layer or film externally mounted on the organic light emitting diode display device, it will not affect the self-luminous efficiency of the organic light emitting diode display device, and is more important. What is needed is to simplify product thickness, reduce product weight, and reduce design and production costs.

雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention The scope shall be determined by the scope of the attached patent application.

Claims (10)

一種有機發光二極體顯示裝置,包含:一基板;一下電極,設置於該基板上;一薄膜電晶體層,設置於該基板上,並位於該基板與該下電極之間;一第一有機層,設置於該下電極上;一發光層,設置於該第一有機層上;一第二有機層,設置於該發光層上;一上電極,設置於該第二有機層上,其中該上電極之材質為透明導電材質或半透明導電材質;以及一光學阻絕層,為完整平面的不透光層,設置於該發光層相對於該第二有機層之一側,並對應作為該薄膜電晶體層的遮光層,完全遮擋該薄膜電晶體層。An organic light emitting diode display device includes: a substrate; a lower electrode disposed on the substrate; a thin film transistor layer disposed on the substrate and located between the substrate and the lower electrode; a first organic Layer is disposed on the lower electrode; a light-emitting layer is disposed on the first organic layer; a second organic layer is disposed on the light-emitting layer; an upper electrode is disposed on the second organic layer, wherein the The material of the upper electrode is a transparent conductive material or a translucent conductive material; and an optical barrier layer is a complete flat opaque layer, which is disposed on one side of the light-emitting layer opposite to the second organic layer and correspondingly serves as the film. The light-shielding layer of the transistor layer completely shields the thin-film transistor layer. 如請求項1所述之有機發光二極體顯示裝置,其中該光學阻絕層之材質為有機導電材質。The organic light emitting diode display device according to claim 1, wherein the material of the optical barrier layer is an organic conductive material. 如請求項1所述之有機發光二極體顯示裝置,其中該光學阻絕層之材質為石墨或石墨烯。The organic light emitting diode display device according to claim 1, wherein the material of the optical barrier layer is graphite or graphene. 如請求項1所述之有機發光二極體顯示裝置,其中該上電極之材質為氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋁鋅(AZO)、氧化鋁銦(AIO)、氧化銦(InO)、氧化鎵(Gallium Oxide,GaO)、奈米碳管、奈米銀絲、奈米銀顆粒或複合透明導電材料。The organic light emitting diode display device according to claim 1, wherein the material of the upper electrode is indium tin oxide (ITO), indium zinc oxide (IZO), zinc aluminum oxide (AZO), indium aluminum oxide (AIO), Indium oxide (InO), gallium oxide (GaO), nano carbon tubes, nano silver wires, nano silver particles or composite transparent conductive materials. 如請求項1所述之有機發光二極體顯示裝置,其中該光學阻絕層設置於該下電極與該第一有機層之間。The organic light emitting diode display device according to claim 1, wherein the optical barrier layer is disposed between the lower electrode and the first organic layer. 如請求項1所述之有機發光二極體顯示裝置,其中該光學阻絕層設置於該第一有機層與該發光層之間。The organic light emitting diode display device according to claim 1, wherein the optical barrier layer is disposed between the first organic layer and the light emitting layer. 如請求項1所述之有機發光二極體顯示裝置,其中光學阻絕層具有傳輸電子/電洞或者控制電子/電洞注入的功能。The organic light emitting diode display device according to claim 1, wherein the optical barrier layer has a function of transmitting electrons / holes or controlling electron / hole injection. 如請求項1所述之有機發光二極體顯示裝置,其中該第一有機層及該第二有機層分別為複合層結構。The organic light emitting diode display device according to claim 1, wherein the first organic layer and the second organic layer have a composite layer structure, respectively. 如請求項1所述之有機發光二極體顯示裝置,其中該第一有機層之材質及該第二有機層之材質分別為有機導電材質或有機與無機的混合導電材質。The organic light emitting diode display device according to claim 1, wherein the material of the first organic layer and the material of the second organic layer are respectively an organic conductive material or an organic and inorganic mixed conductive material. 如請求項1所述之有機發光二極體顯示裝置,其中該下電極為透明導電材質或不透明導電材質。The organic light emitting diode display device according to claim 1, wherein the lower electrode is a transparent conductive material or an opaque conductive material.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200818565A (en) * 2006-10-11 2008-04-16 Innolux Display Corp Organic light emitting display and method of fabricating the same
TWI324491B (en) * 2006-08-16 2010-05-01 Au Optronics Corp Low-reflection self-illumination unit display pixel structure
US7838874B2 (en) * 2007-06-14 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, electronic device, and manufacturing method of light-emitting device
CN102034935A (en) * 2010-09-27 2011-04-27 南京邮电大学 High-contrast top light-emitting type organic light-emitting diode
TWM549960U (en) * 2017-03-21 2017-10-01 宸鴻光電科技股份有限公司 Organic light-emitting diode display device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002108248A (en) * 2000-07-26 2002-04-10 Seiko Epson Corp Electro-optical device, substrate for electro-optical device, and projection display device
JP2002313582A (en) * 2001-04-17 2002-10-25 Matsushita Electric Ind Co Ltd Light emitting element and display device
US7071613B2 (en) * 2001-10-10 2006-07-04 Lg.Philips Lcd Co., Ltd. Organic electroluminescent device
KR102038817B1 (en) * 2013-06-28 2019-11-01 엘지디스플레이 주식회사 Organic electro-luminescent device and method of fabricating the same
CN105093654B (en) * 2015-08-27 2018-12-25 京东方科技集团股份有限公司 Array substrate and preparation method thereof and display device
CN206610832U (en) * 2017-03-21 2017-11-03 宸鸿光电科技股份有限公司 Organic Light Emitting Diode Display Device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI324491B (en) * 2006-08-16 2010-05-01 Au Optronics Corp Low-reflection self-illumination unit display pixel structure
TW200818565A (en) * 2006-10-11 2008-04-16 Innolux Display Corp Organic light emitting display and method of fabricating the same
US7838874B2 (en) * 2007-06-14 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, electronic device, and manufacturing method of light-emitting device
CN102034935A (en) * 2010-09-27 2011-04-27 南京邮电大学 High-contrast top light-emitting type organic light-emitting diode
TWM549960U (en) * 2017-03-21 2017-10-01 宸鴻光電科技股份有限公司 Organic light-emitting diode display device

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