TWI643275B - Electronic structure process - Google Patents
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- TWI643275B TWI643275B TW106115536A TW106115536A TWI643275B TW I643275 B TWI643275 B TW I643275B TW 106115536 A TW106115536 A TW 106115536A TW 106115536 A TW106115536 A TW 106115536A TW I643275 B TWI643275 B TW I643275B
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Abstract
一種電子結構製程,其包括以下步驟。提供重佈線路結構及承載板。形成多個第一接合凸部及第一支撐結構於重佈線路結構。形成第一封膠填充於第一開口與第一接合凸部之間。移除承載板。形成多個第二接合凸部及第二支撐結構於重佈線路結構。形成第二封膠填充於第二開口與第二接合凸部之間。An electronic structure process that includes the following steps. Provide redundant wiring structure and carrier board. A plurality of first joint protrusions and a first support structure are formed on the redistribution line structure. Forming a first sealant between the first opening and the first joint protrusion. Remove the carrier board. A plurality of second joint protrusions and a second support structure are formed on the redistribution line structure. Forming a second sealant between the second opening and the second joint protrusion.
Description
本發明是有關於一種電子結構製程,且特別是有關於一種應用於晶片封裝領域的電子結構製程。This invention relates to an electronic structure process and, more particularly, to an electronic structure process for use in the field of wafer packaging.
在半導體封裝技術領域中,晶片載體(chip carrier)是一種用以將積體電路晶片(IC chip)連接至下一層級的電子元件,例如主機板或模組板等。具有高佈線密度的線路基板(circuit board)經常作為高接點數的晶片載體。線路基板主要由多個圖案化導體層(patterned conductive layer)及多個介電層(dielectric layer)交替疊合而成,而兩圖案化導體層之間可透過導體孔(conductive via)來彼此電性連接。然而在現今的線路基板以及晶片封裝製程中,有製程過程中容易發生的翹曲的問題以及成品結構強度不足的問題。In the field of semiconductor packaging technology, a chip carrier is an electronic component for connecting an integrated circuit chip (IC chip) to a next level, such as a motherboard or a module board. A circuit board having a high wiring density is often used as a wafer carrier of a high number of contacts. The circuit substrate is mainly formed by alternately stacking a plurality of patterned conductive layers and a plurality of dielectric layers, and the two patterned conductor layers are electrically connected to each other through a conductive via. Sexual connection. However, in today's circuit substrates and wafer packaging processes, there are problems of warpage that is likely to occur during the process and insufficient structural strength of the finished product.
本發明提供一種電子結構製程,能提升結構強度且降低其製程的生產成本。The invention provides an electronic structure process, which can improve the structural strength and reduce the production cost of the process.
本發明提出一種電子結構製程,其包括以下步驟。提供重佈線路結構及承載板,其中重佈線路結構配置於承載板上。形成多個第一接合凸部及第一支撐結構於重佈線路結構上。第一支撐結構具有多個第一開口,第一接合凸部位於第一開口中。形成第一封膠。第一封膠填充於第一開口與第一接合凸部之間。移除該承載板。形成多個第二接合凸部及第二支撐結構於重佈線路結構上。第二支撐結構具有多個第二開口,第二接合凸部位於第二開口中。重佈線路結構位於第一支撐結構與第二支撐結構之間。形成第二封膠。第二封膠填充於第二開口與第二接合凸部之間。The present invention provides an electronic structure process that includes the following steps. A redistribution line structure and a carrier board are provided, wherein the redistribution line structure is disposed on the carrier board. A plurality of first joint protrusions and a first support structure are formed on the redistribution line structure. The first support structure has a plurality of first openings, and the first engagement protrusions are located in the first openings. Forming the first sealant. The first glue is filled between the first opening and the first engaging convex portion. Remove the carrier board. A plurality of second joint protrusions and a second support structure are formed on the redistribution line structure. The second support structure has a plurality of second openings, and the second engagement protrusions are located in the second openings. The redistribution line structure is located between the first support structure and the second support structure. Form a second sealant. The second sealant is filled between the second opening and the second joint protrusion.
基於上述,在本發明的電子結構製程中,由於電子結構陣列的各別電子結構的外圍區域配置有支撐結構,因此,能改善製程中發生的翹曲,並且能提升電子結構陣列的結構強度且降低其製程的生產成本,進而增加電子結構的產量。除此之外,支撐結構的配置也可以改善各別電子結構的整體結構強度。Based on the above, in the electronic structure process of the present invention, since the peripheral regions of the respective electronic structures of the electronic structure array are provided with the support structure, the warpage occurring in the process can be improved, and the structural strength of the electronic structure array can be improved and Reduce the production cost of the process, thereby increasing the output of the electronic structure. In addition to this, the configuration of the support structure can also improve the overall structural strength of the individual electronic structures.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.
請參考圖1A、圖2A及圖4A,其中圖1A及圖2A的結構的完整狀態如圖4A所示,意即圖4A的結構的局部呈現於圖1A及圖2A。在本實施例的電子結構製程中,提供承載板110及重佈線路結構120,其中重佈線路結構120具有相對的第一面S1及第二面S2,重佈線路結構120配置於承載板110上。詳細而言,重佈線路結構120的第二面S2連接於承載板110。重佈線路結構120可藉由增層法(build-up process)於承載板110上直接地製作完成,其詳細的製作方式可從相關領域的通常知識中獲致足夠教示、建議與實施說明,故在此不再贅述。為了方便說明,圖1A及圖4A僅繪示出圖2A中位於第一面S1上的部分圖案化線路。Please refer to FIG. 1A, FIG. 2A and FIG. 4A, wherein the complete state of the structure of FIG. 1A and FIG. 2A is as shown in FIG. 4A, that is, the structure of FIG. 4A is partially shown in FIG. 1A and FIG. 2A. In the electronic structure process of the present embodiment, the carrier board 110 and the redistribution line structure 120 are provided. The redistribution line structure 120 has a first surface S1 and a second surface S2. The redistribution line structure 120 is disposed on the carrier board 110. on. In detail, the second side S2 of the redistribution line structure 120 is connected to the carrier board 110. The redistribution line structure 120 can be directly fabricated on the carrier board 110 by a build-up process, and the detailed production method can obtain sufficient teaching, suggestion and implementation instructions from the general knowledge in the related field. I will not repeat them here. For convenience of explanation, FIGS. 1A and 4A only depict a partially patterned line on the first side S1 of FIG. 2A.
請參考圖1B及圖2B。在上述步驟之後,形成多個第一接合凸部130於重佈線路結構120上。詳細而言,在製作完重佈線路結構120之後,繼續在重佈線路結構120的第一面S1的部分圖案化線路上電鍍出導電柱,導電柱的材質例如是銅或其他種類的金屬。多個第一接合凸部130的排列方式例如是陣列排列如圖1B所示,然而在其他實施例中,可依照電性需求電鍍成不同的圖案,本發明不以此為限。Please refer to FIG. 1B and FIG. 2B. After the above steps, a plurality of first bonding protrusions 130 are formed on the redistribution line structure 120. In detail, after the redistribution line structure 120 is formed, the conductive pillars are continuously electroplated on the partially patterned lines of the first surface S1 of the redistribution line structure 120. The material of the conductive pillars is, for example, copper or other kinds of metals. The arrangement of the plurality of first bonding protrusions 130 is, for example, an array arrangement as shown in FIG. 1B. However, in other embodiments, different patterns may be plated according to electrical requirements, and the invention is not limited thereto.
請參考圖1C、圖2C及圖4B,其中圖1C及圖2C的結構的完整狀態如圖4B所示,意即圖4B的結構的局部呈現於圖1C及圖2C。在上述步驟之後,形成第一支撐結構150A於重佈線路結構120上,其中第一支撐結構150A具有多個第一開口Q1,而上述多個第一接合凸部130位於這些第一開口Q1中。在本實施例中,此步驟中還包括經由第一黏著層140將第一支撐結構150A黏貼至重佈線路結構120上,以使第一支撐結構150A固定於重佈線路結構120上。詳細而言,第一黏著層140配置於重佈線路結構120與第一支撐結構150A之間。第一支撐結構120為一個網狀結構,例如是一個網狀的加強支撐件。如此一來,藉由具有多個開口的支撐結構及承載板可改善封裝過程中發生的翹曲,特別是對於尺寸較大的封裝體,且整體厚度較薄處,其改善效果更加明顯。此外,藉由具有多個第一開口Q1的第一支撐結構150A能提升電子結構陣列50(見於圖4E)的結構強度且降低其製程的生產成本,進而增加電子結構100(見於圖1I、2I及圖3B)的產量。Please refer to FIG. 1C, FIG. 2C and FIG. 4B, wherein the complete state of the structure of FIG. 1C and FIG. 2C is as shown in FIG. 4B, that is, the structure of FIG. 4B is partially shown in FIG. 1C and FIG. 2C. After the above steps, the first support structure 150A is formed on the redistribution line structure 120, wherein the first support structure 150A has a plurality of first openings Q1, and the plurality of first joint protrusions 130 are located in the first openings Q1. . In this embodiment, the step further includes attaching the first support structure 150A to the redistribution line structure 120 via the first adhesive layer 140 to fix the first support structure 150A on the redistribution line structure 120. In detail, the first adhesive layer 140 is disposed between the redistribution line structure 120 and the first support structure 150A. The first support structure 120 is a mesh structure, such as a mesh reinforcement support. In this way, the warpage occurring in the packaging process can be improved by the support structure and the carrier plate having a plurality of openings, especially for the larger-sized package body, and the overall thickness is thinner, and the improvement effect is more obvious. In addition, the first support structure 150A having the plurality of first openings Q1 can enhance the structural strength of the electronic structure array 50 (see FIG. 4E) and reduce the production cost of the process, thereby increasing the electronic structure 100 (see FIGS. 1I and 2I). And the yield of Figure 3B).
請參考圖1D及圖2D。在上述步驟之後,形成第一封膠160覆蓋第一支撐結構150A與第一接合凸部130,並且使第一封膠160填充於第一開口Q1與第一接合凸部130之間。換句話說,在此步驟中,將第一封膠160填充在第一支撐結構150A上並且完整地覆蓋住第一支撐結構150 A及第一接合凸部130,以使得第一支撐結構150A中的每一個第一開口Q1皆充滿第一封膠160進而固定第一支撐結構150A及第一接合凸部130。在其他實施例中,也可以將第一封膠160填充於第一開口Q1與第一接合凸部130之間而不覆蓋第一支撐結構150A與第一接合凸部130,本發明不以此為限。Please refer to FIG. 1D and FIG. 2D. After the above steps, the first sealant 160 is formed to cover the first support structure 150A and the first joint protrusion 130, and the first sealant 160 is filled between the first opening Q1 and the first joint protrusion 130. In other words, in this step, the first sealant 160 is filled on the first support structure 150A and completely covers the first support structure 150 A and the first joint protrusion 130 so that the first support structure 150A Each of the first openings Q1 is filled with the first sealant 160 to fix the first support structure 150A and the first joint protrusions 130. In other embodiments, the first sealant 160 may be filled between the first opening Q1 and the first joint protrusion 130 without covering the first support structure 150A and the first joint protrusion 130. Limited.
請參考圖1E、圖2E及圖4C,其中圖1E及圖2E的結構的完整狀態如圖4C所示,意即圖4C的結構的局部呈現於圖1E及圖2E。在上述步驟之後,移除承載板110。由於第一封膠160充滿在每一個第一開口Q1,因此第一支撐結構150A與重佈線路結構120藉由第一封膠160彼此固定連接而不會分離。為了方便說明,圖1E僅繪示出圖2E中位於第二面S2上的部分圖案化線路。Please refer to FIG. 1E, FIG. 2E and FIG. 4C. The complete state of the structure of FIG. 1E and FIG. 2E is shown in FIG. 4C, that is, the structure of FIG. 4C is partially shown in FIG. 1E and FIG. 2E. After the above steps, the carrier board 110 is removed. Since the first sealant 160 is filled in each of the first openings Q1, the first support structure 150A and the redistribution line structure 120 are fixedly connected to each other by the first sealant 160 without being separated. For convenience of explanation, FIG. 1E only depicts a portion of the patterned line on the second side S2 of FIG. 2E.
請參考圖1F、圖2F及圖4D,其中圖1F及圖2F的結構的完整狀態如圖4D所示,意即圖4D的結構的局部呈現於圖1F及圖2F。在上述步驟之後,形成多個第二接合凸部132及第二支撐結構152B於重佈線路結構120上,其中第二支撐結構152B具有多個第二開口Q2,第二接合凸部132位於第二開口Q2中,其中重佈線路結構120位於第一支撐結構150A與第二支撐結構152B之間。詳細而言,在上述步驟之後,繼續在重佈線路結構120的第二面S2的部分圖案化線路上電鍍出導電柱。在本實施例中,其導電柱的材質及排列的方式可依照電性需求而相同或不同於第一接合凸部130,本發明不以此為限。同時,在電鍍出導電柱的步驟中,亦電鍍出第二支撐結構152B。換句話說,在本實施例中,第二支撐結構15B2可與多個第二接合凸部132同時以電鍍法形成在重佈線路結構120上,意即,第二支撐結構152B與第二接合凸部132一體成形。如此一來,可節省製作第二支撐結構152B的材料。第二支撐結構152B相同於第一支撐結構150A為一個網狀結構,例如是一個網狀的加強支撐件。如此一來,可改善封裝過程中發生的翹曲,特別是重佈線路結構120的厚度較薄處(見於圖2E)。此外,藉由具有多個第二開口Q2的第二支撐結構152B能提升電子結構陣列50(見於圖4E)的結構強度且降低其製程的生產成本,進而增加電子結構100(見於圖1I、2I及圖3B)的產量。Please refer to FIG. 1F, FIG. 2F and FIG. 4D, wherein the complete state of the structure of FIG. 1F and FIG. 2F is as shown in FIG. 4D, that is, the structure of FIG. 4D is partially shown in FIG. 1F and FIG. 2F. After the above steps, a plurality of second bonding protrusions 132 and second support structures 152B are formed on the redistribution line structure 120, wherein the second support structure 152B has a plurality of second openings Q2, and the second bonding protrusions 132 are located at the second In the two openings Q2, wherein the redistribution line structure 120 is located between the first support structure 150A and the second support structure 152B. In detail, after the above steps, the conductive pillars are continuously electroplated on the partially patterned lines of the second side S2 of the redistribution line structure 120. In this embodiment, the material and arrangement of the conductive pillars may be the same or different from the first joint protrusions 130 according to electrical requirements, and the invention is not limited thereto. At the same time, in the step of electroplating the conductive pillars, the second support structure 152B is also plated. In other words, in the present embodiment, the second supporting structure 15B2 can be formed on the redistribution line structure 120 by electroplating simultaneously with the plurality of second bonding protrusions 132, that is, the second supporting structure 152B and the second bonding The convex portion 132 is integrally formed. As a result, the material for fabricating the second support structure 152B can be saved. The second support structure 152B is the same as the first support structure 150A in a mesh structure, such as a mesh-shaped reinforcing support. As a result, warpage occurring during the packaging process can be improved, particularly where the thickness of the redistribution wiring structure 120 is thin (see FIG. 2E). In addition, the second support structure 152B having a plurality of second openings Q2 can enhance the structural strength of the electronic structure array 50 (see FIG. 4E) and reduce the production cost of the process, thereby increasing the electronic structure 100 (see FIGS. 1I and 2I). And the yield of Figure 3B).
請參考圖1G及圖2G。在上述步驟之後,形成第二封膠162覆蓋第二支撐結構152B與第二接合凸部132,第二封膠162填充於第二開口Q2與第二接合凸部132之間。換句話說,在此步驟中,將第二封膠162填充在第二支撐結構152B上並且完整地覆蓋住第二支撐結構152B及第二接合凸部132,以使得第二支撐結構152B中的每一個第二開口Q2皆充滿第二封膠162進而固定第二支撐結構152B及第二接合凸部132。在其他實施例中,也可以第二封膠162填充於第二開口Q2與第二接合凸部132之間而不覆蓋第二支撐結構152B與第二接合凸部132,本發明不以此為限。Please refer to FIG. 1G and FIG. 2G. After the above steps, the second sealant 162 is formed to cover the second support structure 152B and the second joint protrusion 132, and the second sealant 162 is filled between the second opening Q2 and the second joint protrusion 132. In other words, in this step, the second sealant 162 is filled on the second support structure 152B and completely covers the second support structure 152B and the second joint protrusion 132 so that the second support structure 152B Each of the second openings Q2 is filled with the second sealant 162 to fix the second support structure 152B and the second joint protrusion 132. In other embodiments, the second sealant 162 may be filled between the second opening Q2 and the second joint protrusion 132 without covering the second support structure 152B and the second joint protrusion 132. limit.
請參考圖1H、圖2H、圖3A及圖4E,其中圖1H、圖2H及圖3A的結構的完整狀態如圖4E所示,意即圖4E的結構的局部呈現於圖1H、圖2H及圖3A。在上述步驟之後,還可以移除第一封膠160的一部分及第二封膠162的一部分,以使第一支撐結構150A以及第一接合凸部130裸露於第一封膠160,且第二支撐結構152B以及第二接合凸部132裸露於第二封膠162,進而使第一接合凸部130及第二接合凸部132作後續接合其他元件或裝置之用。詳細而言,在本實施例中,例如可透過蝕刻、噴砂、拋光等製程方法,將第一封膠160凸出於第一接合凸部130的一部分以及第二封膠162凸出於第二接合凸部132的一部分移除,使得第一接合凸部130及第二接合凸部132可以分別暴露第一封膠160及第二封膠162。此外,在本實施例中,第二接合凸部132裸露於第二封膠162的面積小於第一接合凸部130裸露於第一封膠160的面積,以達到扇出(fan-out) 訊號至後續所欲接合目標的電路的目的。除此之外,第一接合凸部130及第二接合凸部132所凸出於第一封膠160及第二封膠162的裸露部分可依據所欲接合的目標改變而決定,本發明不以此為限。至此,完成電子結構陣列50,其包含多個尚未切割的電子結構100,如圖4E所示。Please refer to FIG. 1H, FIG. 2H, FIG. 3A and FIG. 4E. The complete state of the structure of FIG. 1H, FIG. 2H and FIG. 3A is as shown in FIG. 4E, that is, the structure of FIG. 4E is partially shown in FIG. 1H and FIG. Figure 3A. After the above steps, a portion of the first sealant 160 and a portion of the second sealant 162 may also be removed to expose the first support structure 150A and the first joint protrusion 130 to the first sealant 160, and second The support structure 152B and the second joint protrusion 132 are exposed to the second sealant 162, thereby allowing the first joint protrusion 130 and the second joint protrusion 132 to be subsequently joined to other components or devices. In detail, in the embodiment, the first sealant 160 protrudes from a portion of the first joint protrusion 130 and the second sealant 162 protrudes from the second portion by, for example, etching, sandblasting, polishing, or the like. A portion of the engagement protrusion 132 is removed such that the first engagement protrusion 130 and the second engagement protrusion 132 may expose the first sealant 160 and the second sealant 162, respectively. In addition, in the embodiment, the area of the second bonding protrusion 132 exposed to the second sealing 162 is smaller than the area of the first bonding protrusion 130 exposed to the first sealing 160 to achieve a fan-out signal. The purpose of the circuit to the subsequent target to be joined. In addition, the exposed portions of the first bonding protrusions 130 and the second bonding protrusions 132 protruding from the first encapsulant 160 and the second encapsulant 162 may be determined according to the target to be joined, and the present invention does not This is limited to this. To this end, the electronic structure array 50 is completed, which includes a plurality of electronic structures 100 that have not been cut, as shown in FIG. 4E.
請參考圖1I、圖2I以及圖3B。在上述步驟之後,沿第一開口Q1彼此之間的多個切割線L(見於圖1H、圖2H、圖3A及圖4E)切割第一支撐結構150A、第二支撐結構152B以及重佈線路結構120以形成多個電子結構100。換句話說,每個沿著切割線L切割第一支撐結構150A以及第二支撐結構152B所形成的電子結構100中具有第一支撐結構150A的一部分與第二支撐結構152B的一部分,而此第一支撐結構150A的一部分以及第二支撐結構152B對於單一個電子結構100而言即為兩個環狀的加強支撐件,其能提升電子結構100的整體結構強度,特別是整體結構厚度較薄處。更進一步來說,由於兩個環狀的加強支撐件對齊於切割線L進行切割而形成,故兩加強支撐件皆會暴露於單一個電子結構100的側面102,因此對於電子結構100外圍區域來說,提供了較強的保護。同樣地,重佈線路結構120也對齊於切割線L被切割而使得重佈線路結構120的一部分暴露於單一個電子結構100的側面102。Please refer to FIG. 1I, FIG. 2I and FIG. 3B. After the above steps, the first support structure 150A, the second support structure 152B, and the redistribution line structure are cut along a plurality of cutting lines L (see FIGS. 1H, 2H, 3A, and 4E) between the first openings Q1. 120 to form a plurality of electronic structures 100. In other words, each of the electronic structure 100 formed by cutting the first support structure 150A and the second support structure 152B along the cutting line L has a portion of the first support structure 150A and a portion of the second support structure 152B, and this A portion of a support structure 150A and a second support structure 152B are two annular reinforcing supports for a single electronic structure 100, which can enhance the overall structural strength of the electronic structure 100, particularly where the overall structure thickness is thin. . Furthermore, since the two annular reinforcing supports are formed by cutting along the cutting line L, both reinforcing supports are exposed to the side 102 of the single electronic structure 100, thus for the peripheral area of the electronic structure 100. Said that provides a strong protection. Likewise, the redistribution line structure 120 is also aligned with the cutting line L such that a portion of the redistribution line structure 120 is exposed to the side 102 of the single electronic structure 100.
請再參考圖1H、圖2H、圖3A及圖4E,具體而言,在本實施例中,電子結構陣列50包括多個電子結構100,且電子結構100適於陣列排列以形成電子結構陣列50,如圖4E所呈現。各該電子結構100包括重佈線路結構120、第一支撐結構150A、第二支撐結構152B、多個第一接合凸部130、多個第二接合凸部132、第一封膠160以及第二封膠162。第一支撐結構150A具有第一開口Q1並配置於重佈線路結構120的第一面S1上。第二支撐結構152B具有第二開口Q2,配置於重佈線路結構120相對於第一面S1的第二面S2上。多個第一接合凸部130配置於重佈線路結構120的第一面S1上,且位於第一開口Q1中。多個第二接合凸部132配置於重佈線路結構120的第二面S2上,且位於第二開口Q2中。第一封膠160填充於第一開口Q1與第一接合凸部130之間。第二封膠162填充於第二開口Q2與第二接合凸部132之間。換句話說,電子結構100是由電子結構陣列50切割而成,因此重佈線路結構120、第一支撐結構150A以及第二支撐結構152B也被切割而形成於各電子結構100中。由於電子結構陣列50的各別電子結構100的外圍區域配置有第一支撐結構150A以及第二支撐結構152B,因此,能改善電子結構陣列50封裝過程中發生的翹曲,並且能提升電子結構陣列50的結構強度且降低其製程的生產成本,進而增加電子結構100的產量。除此之外,第一支撐結構150A以及第二支撐結構152B的配置也可以改善各別電子結構100的整體結構強度。Referring again to FIG. 1H, FIG. 2H, FIG. 3A and FIG. 4E, in particular, in the present embodiment, the electronic structure array 50 includes a plurality of electronic structures 100, and the electronic structures 100 are adapted to be arrayed to form an electronic structure array 50. As shown in Figure 4E. Each of the electronic structures 100 includes a redistribution line structure 120, a first support structure 150A, a second support structure 152B, a plurality of first joint protrusions 130, a plurality of second joint protrusions 132, a first sealant 160, and a second Sealing 162. The first support structure 150A has a first opening Q1 and is disposed on the first surface S1 of the redistribution line structure 120. The second support structure 152B has a second opening Q2 disposed on the second surface S2 of the redistribution line structure 120 with respect to the first surface S1. The plurality of first bonding protrusions 130 are disposed on the first surface S1 of the redistribution line structure 120 and are located in the first opening Q1. The plurality of second bonding protrusions 132 are disposed on the second surface S2 of the redistribution line structure 120 and are located in the second opening Q2. The first adhesive 160 is filled between the first opening Q1 and the first engaging projection 130. The second sealant 162 is filled between the second opening Q2 and the second joint protrusion 132. In other words, the electronic structure 100 is cut from the electronic structure array 50, and thus the redistribution wiring structure 120, the first support structure 150A, and the second support structure 152B are also cut and formed in the respective electronic structures 100. Since the peripheral regions of the respective electronic structures 100 of the electronic structure array 50 are provided with the first supporting structure 150A and the second supporting structure 152B, the warpage occurring during the packaging process of the electronic structure array 50 can be improved, and the electronic structure array can be improved. The structural strength of 50 reduces the production cost of the process, thereby increasing the yield of electronic structure 100. In addition, the configuration of the first support structure 150A and the second support structure 152B can also improve the overall structural strength of the respective electronic structure 100.
請再參考圖1I、圖2I以及圖3B,具體而言,在本實施例中,電子結構100包括重佈線路結構120、第一支撐結構150A、第二支撐結構152B、多個第一接合凸部130、多個第二接合凸部132、第一封膠160以及第二封膠162。第一支撐結構150A具有第一開口Q1並配置於重佈線路結構120的第一面S1上。第二支撐結構152B具有第二開口Q2並配置於重佈線路結構120相對於第一面S1的第二面S2上。多個第一接合凸部130配置於重佈線路結構120的第一面S1上,且位於第一開口Q1中。多個第二接合凸部132配置於重佈線路結構120的第二面S2上,且位於第二開口Q2中。第一封膠160填充於第一開口Q1與第一接合凸部130之間。第二封膠162填充於第二開口Q2與第二接合凸部132之間。其中電子結構100是由電子結構陣列50(見於圖4E)切割而成,因此重佈線路結構120、第一支撐結構150A以及第二支撐結構152B也被切割而形成於各電子結構100中。由於電子結構100的外圍區域配置有第一支撐結構150A以及第二支撐結構152B,因此,能改善電子結構100的整體結構強度,特別是整體結構厚度較薄處。Referring to FIG. 1I, FIG. 2I and FIG. 3B, in particular, in the embodiment, the electronic structure 100 includes a redistribution line structure 120, a first support structure 150A, a second support structure 152B, and a plurality of first joint protrusions. The portion 130, the plurality of second engaging protrusions 132, the first sealant 160, and the second sealant 162. The first support structure 150A has a first opening Q1 and is disposed on the first surface S1 of the redistribution line structure 120. The second support structure 152B has a second opening Q2 and is disposed on the second surface S2 of the redistribution line structure 120 with respect to the first surface S1. The plurality of first bonding protrusions 130 are disposed on the first surface S1 of the redistribution line structure 120 and are located in the first opening Q1. The plurality of second bonding protrusions 132 are disposed on the second surface S2 of the redistribution line structure 120 and are located in the second opening Q2. The first adhesive 160 is filled between the first opening Q1 and the first engaging projection 130. The second sealant 162 is filled between the second opening Q2 and the second joint protrusion 132. The electronic structure 100 is cut by the electronic structure array 50 (see FIG. 4E), and thus the redistribution line structure 120, the first support structure 150A, and the second support structure 152B are also cut and formed in each electronic structure 100. Since the peripheral region of the electronic structure 100 is provided with the first support structure 150A and the second support structure 152B, the overall structural strength of the electronic structure 100 can be improved, particularly where the overall structure thickness is thin.
請參考圖5,本實施例的電子結構100A類似於圖2I的電子結構100,惟兩者之間主要差異在於,在形成多個第一接合凸部130於重佈線路結構120的步驟中(見於圖2B),第一支撐結構150B與第一接合凸部130同時以電鍍法形成在重佈線路結構120上,意即,第一支撐結構150B與第一接合凸部130一體成形。如此一來,可節省製作第一支撐結構150B的材料。Referring to FIG. 5, the electronic structure 100A of the present embodiment is similar to the electronic structure 100 of FIG. 2I, but the main difference between the two is that in the step of forming the plurality of first bonding protrusions 130 in the redistribution line structure 120 ( 2B), the first support structure 150B and the first bonding protrusion 130 are simultaneously formed on the redistribution wiring structure 120 by electroplating, that is, the first support structure 150B is integrally formed with the first bonding protrusion 130. In this way, the material for fabricating the first support structure 150B can be saved.
請參考圖6,本實施例的電子結構100B類似於圖5的電子結構100A,惟兩者之間主要差異在於,在形成多個第二接合凸部132於重佈線路結構120的步驟中,經由第二黏著層142將第二支撐結構152A黏貼至重佈線路結構120上,以使第二支撐結構152A固定於重佈線路結構120上。詳細而言,第二黏著層142配置於重佈線路結構120與第二支撐結構152A之間。如此一來,藉由具有多個開口的支撐結構可改善封裝過程中發生的翹曲,特別是整體結構厚度較薄處。Referring to FIG. 6, the electronic structure 100B of the present embodiment is similar to the electronic structure 100A of FIG. 5, but the main difference between the two is that in the step of forming the plurality of second bonding protrusions 132 in the redistribution line structure 120, The second support structure 152A is adhered to the redistribution line structure 120 via the second adhesive layer 142 to fix the second support structure 152A to the redistribution line structure 120. In detail, the second adhesive layer 142 is disposed between the redistribution line structure 120 and the second support structure 152A. In this way, the warpage occurring during the packaging process can be improved by the support structure having a plurality of openings, in particular, the thickness of the overall structure is thin.
請參考圖7,本實施例的電子結構100C類似於圖2I的電子結構100,惟兩者之間主要差異在於,在形成多個第二接合凸部132於重佈線路結構120的步驟中(見於圖2F),經由第二黏著層142將第二支撐結構152A黏貼至重佈線路結構120上,以使第二支撐結構152A固定於重佈線路結構120上。詳細而言,第二黏著層142配置於重佈線路結構120與第二支撐結構152A之間。如此一來,藉由具有多個開口的支撐結構可改善封裝過程中發生的翹曲,特別是整體結構厚度較薄處。Referring to FIG. 7, the electronic structure 100C of the present embodiment is similar to the electronic structure 100 of FIG. 2I, but the main difference between the two is that in the step of forming the plurality of second bonding protrusions 132 in the redistribution line structure 120 ( 2F), the second support structure 152A is adhered to the redistribution line structure 120 via the second adhesive layer 142 to secure the second support structure 152A to the redistribution line structure 120. In detail, the second adhesive layer 142 is disposed between the redistribution line structure 120 and the second support structure 152A. In this way, the warpage occurring during the packaging process can be improved by the support structure having a plurality of openings, in particular, the thickness of the overall structure is thin.
請參考圖8A及圖9A。在移除第一封膠160的一部分及第二封162膠的一部分的步驟之後,形成第三支撐結構154A於第二支撐結構152A上,第二支撐結構152A位於第一支撐結構150B與第三支撐結構154A之間,第三支撐結構154A具有多個第三開口Q3。在形成第三支撐結構154A於第二支撐結構152A的步驟中,經由第三黏著層144將第三支撐結構154A黏貼至第二支撐結構152A上,其中第三支撐結構154A為網狀結構,例如是一個網狀的加強支撐件。如此一來,可對後續所欲接合至第二接合凸部132上的目標改善其封裝過程中發生的翹曲並改善整體結構強度,特別是整體結構厚度較薄處。Please refer to FIG. 8A and FIG. 9A. After the step of removing a portion of the first sealant 160 and a portion of the second seal 162, a third support structure 154A is formed on the second support structure 152A, and the second support structure 152A is located at the first support structure 150B and the third Between the support structures 154A, the third support structure 154A has a plurality of third openings Q3. In the step of forming the third support structure 154A in the second support structure 152A, the third support structure 154A is adhered to the second support structure 152A via the third adhesive layer 144, wherein the third support structure 154A is a mesh structure, for example It is a mesh reinforcement support. In this way, the warpage that occurs during the packaging process can be improved and the overall structural strength can be improved for the target to be joined to the second bonding protrusion 132, and the thickness of the overall structure is thinner.
請參考圖8B及圖9B。在上述步驟之後,於各第三開口Q3中設置晶片170,且晶片170連接於對應的第二開口Q2中的多個第二接合凸部132。換句話說,在每個第二開口Q2中的多個第二接合凸部132上設置一個晶片170。然而,在其他實施例中,也可以設置兩個以上晶片,本發明不以此為限。詳細而言,配置晶片170並且直接地連接第二接合凸部132,藉由重佈線路結構120的配置,可將晶片170上的訊號扇出(fan-out)至重佈線路結構120的晶片170投影區外,進而增加晶片170的訊號配置的彈性。另外,第二接合凸部132可直接與晶片170上的接墊170a電性連接,而不需要額外再配置凸塊(bump)。此外,更可以配置多個焊球(未繪示)在第一接合凸部130上,而重佈線路結構120位於晶片170與焊球之間。Please refer to FIG. 8B and FIG. 9B. After the above steps, the wafer 170 is disposed in each of the third openings Q3, and the wafer 170 is connected to the plurality of second bonding protrusions 132 in the corresponding second opening Q2. In other words, one wafer 170 is disposed on the plurality of second bonding protrusions 132 in each of the second openings Q2. However, in other embodiments, more than two wafers may be disposed, and the invention is not limited thereto. In detail, the wafer 170 is disposed and directly connected to the second bonding protrusion 132. By repeating the configuration of the wiring structure 120, the signal on the wafer 170 can be fan-out to the wafer of the redistribution line structure 120. Outside the 170 projection area, the flexibility of the signal configuration of the wafer 170 is increased. In addition, the second bonding protrusions 132 can be electrically connected directly to the pads 170a on the wafer 170 without additionally requiring additional bumps. In addition, a plurality of solder balls (not shown) may be disposed on the first bonding protrusions 130, and the redistribution line structure 120 is located between the wafer 170 and the solder balls.
請參考圖8C及圖9C。在上述步驟之後,形成第三封膠164A於第二封膠162上,該第三封膠164A填充於第二封膠162與對應的晶片170之間,以完成晶片封裝陣列50A。換句話說,在此步驟中,將第三封膠164A填充在第二封膠162上並且完整地覆蓋住第三支撐結構154A及晶片170,以使得第三支撐結構154A中的每一個第三開口Q3皆充滿第三封膠164A進而固定第三支撐結構154A及晶片170。Please refer to FIG. 8C and FIG. 9C. After the above steps, a third sealant 164A is formed on the second sealant 162, and the third sealant 164A is filled between the second sealant 162 and the corresponding wafer 170 to complete the wafer package array 50A. In other words, in this step, the third sealant 164A is filled on the second sealant 162 and completely covers the third support structure 154A and the wafer 170 such that each of the third support structures 154A is third. The opening Q3 is filled with the third sealant 164A to fix the third support structure 154A and the wafer 170.
請參考圖10A及圖10B。本實施例的電子結構製程步驟類似於圖8C及圖9C的電子結構製程步驟,惟兩者之間主要差異在於第三封膠164B的配置。詳細而言,在上述的步驟中,第三封膠164B可僅填充於第二封膠162與對應的晶片170之間,或著是,移除第三封膠164A(見於圖8C及圖9C)的一部分以形成第三封膠164B進而使晶片170裸露,進而完成晶片封裝陣列50B。如此一來,晶片170可暴露於電子結構陣列50B外以接觸散熱導體,進而使後續所切割的單一個電子結構有更好的散熱性。Please refer to FIG. 10A and FIG. 10B. The electronic structure process steps of this embodiment are similar to the electronic structure process steps of FIGS. 8C and 9C, but the main difference between the two is the configuration of the third sealant 164B. In detail, in the above steps, the third sealant 164B may be filled only between the second sealant 162 and the corresponding wafer 170, or the third sealant 164A may be removed (see FIGS. 8C and 9C). A portion of the film is formed to form a third sealant 164B to expose the wafer 170, thereby completing the wafer package array 50B. As such, the wafer 170 can be exposed outside the array of electronic structures 50B to contact the heat dissipating conductors, thereby providing better heat dissipation for the subsequently cut single electronic structure.
綜上所述,在本發明的電子結構製程中,由於電子結構陣列的個別電子結構的外圍區域配置有支撐結構,因此,能改善製程中發生的翹曲,特別是整體結構厚度較薄處,並且能提升電子結構陣列的結構強度且降低其製程的生產成本,進而增加電子結構的產量。除此之外,支撐結構的配置也可以改善個別電子結構的整體結構強度。In summary, in the electronic structure process of the present invention, since the peripheral structure of the individual electronic structures of the electronic structure array is provided with the support structure, the warpage occurring in the process can be improved, especially where the thickness of the overall structure is thin. Moreover, the structural strength of the electronic structure array can be improved and the production cost of the process can be reduced, thereby increasing the output of the electronic structure. In addition to this, the configuration of the support structure can also improve the overall structural strength of the individual electronic structures.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
50、50A、50B‧‧‧電子結構陣列50, 50A, 50B‧‧‧ electronic structure array
100、100A、100B、100C‧‧‧電子結構100, 100A, 100B, 100C‧‧‧ electronic structure
120‧‧‧重佈線路結構120‧‧‧Re-distribution line structure
130‧‧‧第一接合凸部130‧‧‧First joint projection
132‧‧‧第二接合凸部132‧‧‧Second joint projection
140‧‧‧第一黏著層140‧‧‧First adhesive layer
142‧‧‧第二黏著層142‧‧‧Second Adhesive Layer
144‧‧‧第三黏著層144‧‧‧ third adhesive layer
150A、150B‧‧‧第一支撐結構150A, 150B‧‧‧ first support structure
152A、152B‧‧‧第二支撐結構152A, 152B‧‧‧second support structure
154A‧‧‧第三支撐結構154A‧‧‧3rd support structure
160‧‧‧第一封膠160‧‧‧First sealant
162‧‧‧第二封膠162‧‧‧Second sealant
164A、164B‧‧‧第三封膠164A, 164B‧‧‧ third sealant
170‧‧‧晶片170‧‧‧ wafer
170a‧‧‧接墊170a‧‧‧ pads
L‧‧‧切割線L‧‧‧ cutting line
Q1‧‧‧第一開口Q1‧‧‧ first opening
Q2‧‧‧第二開口Q2‧‧‧ second opening
Q3‧‧‧第三開口Q3‧‧‧ third opening
S1‧‧‧第一面S1‧‧‧ first side
S2‧‧‧第二面S2‧‧‧ second side
圖1A至圖1D依序為本發明的一實施例的電子結構製程的俯視示意圖。 圖1E至圖1G依序為圖1D的電子結構製程的接續製程的仰視示意圖。 圖1H至圖1I依序為圖1G的電子結構製程的接續製程的俯視示意圖。 圖2A至圖2I分別是圖1A至圖1I的結構沿圖1A的線A-A’的剖面示意圖。 圖3A及圖3B分別是圖2H及圖2I的結構的仰視示意圖。 圖4A是圖1A及圖2A的結構於完整狀態下的立體示意圖。 圖4B是圖1C及圖2C的結構於完整狀態下的立體示意圖。 圖4C是圖1E及圖2E的結構於完整狀態下的立體示意圖。 圖4D是圖1F及圖2F的結構於完整狀態下的立體示意圖。 圖4E是圖1H、圖2H及圖3A的結構於完整狀態下的立體示意圖。 圖5為本發明的另一實施例的電子結構的剖面示意圖。 圖6為本發明的又一實施例的電子結構的剖面示意圖。 圖7為本發明的再一實施例的電子結構的剖面示意圖。 圖8A至圖8C依序為圖2H的電子結構製程的接續製程的仰視示意圖。 圖9A至圖9C分別是圖8A至圖8C的結構沿圖1A的線A-A’的剖面示意圖。 圖10A為圖8B的電子結構製程的另一實施例接續製程的仰視示意圖。 圖10B為圖10A的結構沿圖1A的線A-A’的剖面示意圖。1A to 1D are schematic plan views of an electronic structure process according to an embodiment of the present invention. 1E to FIG. 1G are schematic bottom views of the subsequent process of the electronic structure process of FIG. 1D. 1H to FIG. 1I are schematic plan views of the subsequent process of the electronic structure process of FIG. 1G. 2A to 2I are schematic cross-sectional views of the structure of Figs. 1A to 1I taken along line A-A' of Fig. 1A, respectively. 3A and 3B are bottom views showing the structure of Figs. 2H and 2I, respectively. 4A is a schematic perspective view of the structure of FIGS. 1A and 2A in a complete state. 4B is a schematic perspective view of the structure of FIGS. 1C and 2C in a complete state. 4C is a schematic perspective view of the structure of FIGS. 1E and 2E in a complete state. 4D is a schematic perspective view of the structure of FIGS. 1F and 2F in a complete state. 4E is a schematic perspective view of the structure of FIGS. 1H, 2H, and 3A in a complete state. Figure 5 is a cross-sectional view showing an electronic structure in accordance with another embodiment of the present invention. Figure 6 is a cross-sectional view showing an electronic structure according to still another embodiment of the present invention. Figure 7 is a cross-sectional view showing an electronic structure in accordance with still another embodiment of the present invention. 8A to 8C are schematic bottom views of the subsequent process of the electronic structure process of FIG. 2H. 9A to 9C are schematic cross-sectional views of the structure of Figs. 8A to 8C taken along line A-A' of Fig. 1A, respectively. FIG. 10A is a bottom plan view showing another embodiment of the electronic structure process of FIG. 8B. Figure 10B is a cross-sectional view of the structure of Figure 10A taken along line A-A' of Figure 1A.
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