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TWI605788B - Laser apparatus - Google Patents

Laser apparatus Download PDF

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Publication number
TWI605788B
TWI605788B TW105134526A TW105134526A TWI605788B TW I605788 B TWI605788 B TW I605788B TW 105134526 A TW105134526 A TW 105134526A TW 105134526 A TW105134526 A TW 105134526A TW I605788 B TWI605788 B TW I605788B
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Taiwan
Prior art keywords
laser
light
laser device
housing
laser crystal
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TW105134526A
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Chinese (zh)
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TW201815360A (en
Inventor
吳泰緯
曹宏熙
洪基彬
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財團法人工業技術研究院
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Priority to TW105134526A priority Critical patent/TWI605788B/en
Priority to CN201611186671.7A priority patent/CN107994454A/en
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Publication of TWI605788B publication Critical patent/TWI605788B/en
Publication of TW201815360A publication Critical patent/TW201815360A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/0933Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094003Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)

Description

雷射裝置 Laser device

本揭露係關於一種雷射裝置,特別是指一種具有複數呈環形或對稱排列之燈條或導光條之雷射裝置。 The present disclosure relates to a laser device, and more particularly to a laser device having a plurality of light bars or light guide bars arranged in a ring or symmetry.

雷射在醫療方面之應用愈來愈廣泛,例如儀器掃描、手術、殺菌等,而手持式雷射裝置是未來發展之趨勢。然而,一般手持雷射裝置大多是由二節骨架所組成,不僅重量重會增加使用者之負擔,而且移動上也造成不便,再加上雷射擊發時,雷射晶體(共振腔)內需要高壓驅動,也是增加危險性之原因。 The application of lasers in medical applications is becoming more and more extensive, such as instrument scanning, surgery, sterilization, etc., and handheld laser devices are the future development trend. However, most of the handheld laser devices are composed of two skeletons, which not only increase the weight of the user, but also cause inconvenience to the movement. In addition, when the laser is fired, the laser crystal (resonance cavity) needs High-voltage drive is also the cause of increased risk.

目前雷射醫療設備中,手持式雷射裝置之架構通常是以閃光燈燈管作為雷射之汞浦源(pump source),並將閃光燈燈管與雷射晶體做平行排列,且利用側向激發之方式對雷射晶體進行照射,進而透過雷射晶體輸出雷射光束。 At present, in the laser medical equipment, the structure of the handheld laser device is usually a flash lamp as a laser pump source, and the flash lamp is arranged in parallel with the laser crystal, and lateral excitation is utilized. In this way, the laser crystal is irradiated, and the laser beam is output through the laser crystal.

詳言之,一般手持式雷射裝置之外觀是以二個活動骨架作90度連接,而雷射晶體(共振腔)則放在第二節骨架中,並透過二面反射鏡將雷射晶體所輸出之雷射光束傳導至第一節骨架。但是,因閃光燈燈管與雷射晶體(共振腔)為平行設置,再加上兩者均需要透過水溶液進行降溫,故手持 式雷射裝置之尺寸無法縮小,從而造成體積大且重量重。 In particular, the appearance of a typical handheld laser device is 90 degrees connected by two active skeletons, while the laser crystal (resonant cavity) is placed in the second section of the skeleton, and the laser crystal is transmitted through the dihedral mirror. The output laser beam is conducted to the first section skeleton. However, since the flash lamp tube is arranged in parallel with the laser crystal (resonant cavity), and both need to be cooled by the aqueous solution, the hand is held. The size of the laser device cannot be reduced, resulting in a large volume and heavy weight.

再者,在閃光燈燈管之點亮上,因閃光燈燈管之二端電極需要數百伏特之高壓電源,故若電極與金屬互相接觸則會造成短路,或者長期使用閃光燈燈管後,二端電極外圍之絕緣皮也易老化脫落,此時手持式雷射裝置會充斥著高壓電源,進而危害到使用者之安全。 Furthermore, in the lighting of the flash lamp, since the two-end electrode of the flash lamp requires a high-voltage power supply of several hundred volts, if the electrode and the metal are in contact with each other, a short circuit may occur, or after the flash lamp is used for a long time, the two ends The insulation on the periphery of the electrode is also prone to aging. At this time, the handheld laser device will be filled with high-voltage power, which will endanger the safety of the user.

另外,以閃光燈燈管而言,閃光燈燈管之波長介於220至280奈米之間,且雷射晶體之吸收光譜相當的窄,在閃光燈燈管搭配雷射晶體下,容易造成過多的光轉化成熱源,導致雷射轉換效能難以提升。 In addition, in the case of a flash lamp, the wavelength of the flash lamp is between 220 and 280 nm, and the absorption spectrum of the laser crystal is rather narrow. Under the flash lamp with the laser crystal, it is easy to cause excessive light. Conversion to a heat source makes laser conversion performance difficult to improve.

因此,如何解決上述習知技術之問題,實已成為本領域技術人員之一大課題。 Therefore, how to solve the above problems of the prior art has become one of the major problems of those skilled in the art.

本揭露係提供一種雷射裝置,其可提升雷射晶體之接收照度或雷射光束之輸出效能。 The present disclosure provides a laser device that enhances the illumination of a laser crystal or the output of a laser beam.

本揭露之一雷射裝置包括:一殼體,其具有一環形或多邊形之內壁;一雷射晶體,其設置於該殼體中,並位在或鄰近該殼體之該環形或多邊形之內壁之中心;以及至少二燈條,其設置於該殼體中,並位在或鄰近該殼體之該環形或多邊形之內壁,其中,該些燈條呈環形排列或對稱排列於該雷射晶體之周圍,並分別照射光線至該雷射晶體以通過該雷射晶體輸出一雷射光束。 A laser device of the present disclosure includes: a housing having an annular or polygonal inner wall; a laser crystal disposed in the housing and located adjacent to or adjacent to the annular or polygonal shape of the housing a center of the inner wall; and at least two light bars disposed in the housing and located at or adjacent to the inner wall of the annular or polygonal shape of the housing, wherein the light bars are arranged in a ring shape or symmetrically arranged thereon The laser crystal is surrounded and irradiated with light to the laser crystal to output a laser beam through the laser crystal.

本揭露之另一雷射裝置包括:一殼體,其具有一環形或多邊形之內壁;一雷射晶體,其設置於該殼體中,並位 在或鄰近該殼體之該環形或多邊形之內壁之中心;以及至少二導光條,其設置於該殼體中,並位在或鄰近該殼體之該環形或多邊形之內壁,其中,該些導光條呈環形排列或對稱排列於該雷射晶體之周圍,並分別照射光線至該雷射晶體以通過該雷射晶體輸出一雷射光束。 Another laser device of the present disclosure includes: a casing having an annular or polygonal inner wall; and a laser crystal disposed in the casing and in position At or adjacent to a center of the annular or polygonal inner wall of the housing; and at least two light guiding strips disposed in the housing and located adjacent to or adjacent to the annular or polygonal inner wall of the housing, wherein The light guiding strips are arranged in a ring shape or symmetrically arranged around the laser crystal, and respectively irradiate light to the laser crystal to output a laser beam through the laser crystal.

由上可知,本揭露之雷射裝置中,主要是將複數燈條或導光條呈環形或對稱排列於雷射晶體之周圍,並分別照射光線至該雷射晶體以輸出一雷射光束,藉此提升該雷射晶體之接收照度、該雷射光束之轉換效能或輸出效能。 It can be seen from the above that in the laser device of the present disclosure, the plurality of light bars or light guiding strips are arranged annularly or symmetrically around the laser crystal, and respectively irradiate light to the laser crystal to output a laser beam. Thereby, the receiving illumination of the laser crystal, the conversion performance or the output performance of the laser beam is improved.

為讓本揭露之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明。在以下描述內容中將部分闡述本揭露之額外特徵及優點,且此等特徵及優點將部分自所述描述內容顯而易見,或可藉由對本揭露之實踐習得。本揭露之特徵及優點借助於在申請專利範圍中特別指出的元件及組合來認識到並達到。應理解,前文一般描述與以下詳細描述兩者均僅為例示性及解釋性的,且不欲約束本揭露所主張之範圍。 The above described features and advantages of the present invention will be more apparent from the following description. Additional features and advantages of the present invention will be set forth in part in the description. The features and advantages of the present invention are realized and attained by the elements and combinations particularly pointed out in the appended claims. It is to be understood that both the foregoing general description and

1、1a、1b‧‧‧雷射裝置 1, 1a, 1b‧‧‧ laser device

2、20‧‧‧殼體 2, 20‧‧‧ shell

21‧‧‧內壁 21‧‧‧ inner wall

22‧‧‧中心 22‧‧‧ Center

23‧‧‧容置空間 23‧‧‧ accommodating space

3‧‧‧雷射晶體 3‧‧‧Laser crystal

30‧‧‧雷射光束 30‧‧‧Laser beam

31‧‧‧第一端面 31‧‧‧ first end face

32‧‧‧第二端面 32‧‧‧second end face

41‧‧‧第一薄膜 41‧‧‧First film

42‧‧‧第二薄膜 42‧‧‧Second film

5‧‧‧燈條 5‧‧‧Light strips

5a‧‧‧發光二極體 5a‧‧‧Lighting diode

5b‧‧‧導光條 5b‧‧‧Light guide strip

50‧‧‧光線 50‧‧‧Light

51‧‧‧承載部 51‧‧‧Loading Department

52‧‧‧發光部 52‧‧‧Lighting Department

53‧‧‧斜面 53‧‧‧Bevel

54‧‧‧V型溝槽 54‧‧‧V-groove

61‧‧‧汞浦光源 61‧‧‧ Mercury source

62‧‧‧多芯光纖 62‧‧‧Multi-core fiber

71‧‧‧聚焦鏡 71‧‧‧ Focusing mirror

72‧‧‧反射鏡 72‧‧‧Mirror

73‧‧‧輸出端 73‧‧‧ Output

D‧‧‧方向 D‧‧‧ Direction

α‧‧‧夾角 ‧‧‧‧ angle

β、θ‧‧‧角度 、, θ‧‧‧ angle

第1A圖與第1B圖係分別繪示本揭露之雷射裝置於二個不同方向之剖視圖;第2A圖至第2F圖係分別繪示本揭露第1A圖之雷射裝置之各種不同態樣;第3A圖與第3B圖係分別繪示本揭露第一實施例之雷射裝置於二個不同方向之剖視圖; 第4A圖與第4B圖係分別繪示本揭露第二實施例之雷射裝置於二個不同方向之剖視圖;第5圖係繪示本揭露第4B圖之雷射裝置之部分放大圖;以及第6圖係繪示本揭露之雷射裝置與習知技術之手持式雷射裝置之比較表。 1A and 1B are respectively a cross-sectional view of the laser device of the present disclosure in two different directions; FIGS. 2A to 2F are respectively different aspects of the laser device of the first embodiment of the present disclosure. 3A and 3B are respectively a cross-sectional view of the laser device of the first embodiment in two different directions; 4A and 4B are respectively a cross-sectional view of the laser device according to the second embodiment of the present disclosure in two different directions; and FIG. 5 is a partially enlarged view of the laser device of the fourth embodiment; Figure 6 is a comparison of a laser device of the present disclosure with a hand-held laser device of the prior art.

以下藉由特定的具體實施形態說明本揭露之實施方式,熟悉此技術之人士可由本說明書所揭示之內容輕易地了解本揭露之其他優點與功效,亦可藉由其他不同的具體實施形態加以施行或應用。 The embodiments of the present disclosure are described in the following specific embodiments, and those skilled in the art can easily understand other advantages and functions of the disclosure by the contents disclosed in the specification, and can also be implemented by other different embodiments. Or application.

第1A圖與第1B圖係分別繪示本揭露之雷射裝置1於二個不同方向(如側向及正向)之剖視圖。如圖所示,該雷射裝置1可為手持式雷射裝置,並可為第3A圖至第3B圖之第一實施例之雷射裝置1a、或第4A圖至第4B圖之第二實施例之雷射裝置1b,但不以此為限。 1A and 1B are cross-sectional views of the laser device 1 of the present disclosure in two different directions, such as lateral and forward directions, respectively. As shown, the laser device 1 can be a handheld laser device, and can be the laser device 1a of the first embodiment of FIG. 3A to FIG. 3B, or the second of the 4A to 4B drawings. The laser device 1b of the embodiment is not limited thereto.

如第1A圖與第1B圖所示,該雷射裝置1主要包括一殼體2、一雷射晶體3與至少二燈條5,例如第1A圖顯示六燈條5。該殼體2具有一環形或多邊形之內壁21。該環形可為圓形或橢圓形等,該多邊形可為四邊形、五邊形、六邊形或其他多邊形,請見第2A圖至第2F圖。 As shown in FIGS. 1A and 1B, the laser device 1 mainly includes a casing 2, a laser crystal 3 and at least two light bars 5, for example, FIG. 1A shows a six light bar 5. The housing 2 has an annular or polygonal inner wall 21. The ring may be circular or elliptical, etc., and the polygon may be a quadrangle, a pentagon, a hexagon, or other polygons, see Figures 2A through 2F.

該雷射晶體3設置於該殼體2中,並位在或鄰近該殼體2之該環形或多邊形之內壁21之中心22。該雷射晶體3可為雷射增益介質(laser gain medium)。該些燈條5設置於 該殼體2中,並位在或鄰近該殼體2之該環形或多邊形之內壁21。該些燈條5可呈環形排列或對稱排列於該雷射晶體3之周圍,並分別照射光線50至該雷射晶體3以激發該雷射晶體3輸出一雷射光束30。 The laser crystal 3 is disposed in the housing 2 and is located at or adjacent to the center 22 of the annular or polygonal inner wall 21 of the housing 2. The laser crystal 3 can be a laser gain medium. The light strips 5 are disposed on The housing 2 is located at or adjacent to the annular or polygonal inner wall 21 of the housing 2. The light bars 5 may be arranged in a ring shape or symmetrically arranged around the laser crystal 3, and respectively illuminate the light 50 to the laser crystal 3 to excite the laser crystal 3 to output a laser beam 30.

該殼體2可具有一容置空間23,且該容置空間23中可填充有冷卻液(圖未示),以藉由該冷卻液降低該雷射晶體3與該些燈條5之溫度。該冷卻液可為冷卻水或含有冷凝膠體之冷卻液。而且,該雷射裝置1可連接水循環系統(圖未示)至該殼體2之容置空間23中,以透過該水循環系光供給及循環該冷卻液。 The housing 2 can have an accommodating space 23, and the accommodating space 23 can be filled with a cooling liquid (not shown) to reduce the temperature of the laser crystal 3 and the light bar 5 by the cooling liquid. . The coolant may be cooling water or a coolant containing a cold gel. Moreover, the laser device 1 can be connected to a water circulation system (not shown) to the accommodating space 23 of the casing 2 to supply and circulate the coolant through the water circulation system.

該雷射裝置1可包括第一薄膜41與第二薄膜42。該第一薄膜41與與第二薄膜42分別形成於該雷射晶體3之相對之第一端面31與第二端面32上,且該第一薄膜41、雷射晶體3與第二薄膜42共同構成一共振腔。 The laser device 1 may include a first film 41 and a second film 42. The first film 41 and the second film 42 are respectively formed on the first end surface 31 and the second end surface 32 of the laser crystal 3, and the first film 41, the laser crystal 3 and the second film 42 are common. Form a resonant cavity.

該第一薄膜41可作為第一反射鏡,且該第一薄膜41具有全反射之940至990奈米(nm)之波長、與全反射之2650至3000奈米之波長。該第二薄膜42可作為第二反射鏡,且該第二薄膜42具有全反射之940至990奈米之波長、與部分反射之2650至3000奈米之波長。該第二薄膜42之該部分反射之反射率可為90%至99%,且該雷射晶體3可透過該第二薄膜42輸出該雷射光束30,但不以此為限。 The first film 41 can serve as a first mirror, and the first film 41 has a wavelength of 940 to 990 nanometers (nm) of total reflection and a wavelength of 2650 to 3000 nm of total reflection. The second film 42 can serve as a second mirror, and the second film 42 has a wavelength of 940 to 990 nm for total reflection and a wavelength of 2650 to 3000 nm for partial reflection. The partial reflection of the second film 42 may reflect a reflectance of 90% to 99%, and the laser crystal 3 may output the laser beam 30 through the second film 42 without limitation.

另外,該雷射裝置1可包括一殼體20、一聚焦鏡71、一反射鏡72與一輸出端73。該殼體20可結合至該殼體2,該聚焦鏡71位於該殼體20中並對應於該第二薄膜42,該 反射鏡72位於該殼體20中並對應於該聚焦鏡71,該輸出端73位於該殼體20外並對應於該反射鏡72。而且,該聚焦鏡71可將該雷射晶體3透過該第二薄膜42所輸出之該雷射光束30聚焦於該反射鏡72中,並由該反射鏡72將該聚焦鏡71所聚焦之該雷射光束30反射或輸出至該輸出端73外。 In addition, the laser device 1 can include a housing 20, a focusing mirror 71, a mirror 72 and an output end 73. The housing 20 can be coupled to the housing 2, and the focusing mirror 71 is located in the housing 20 and corresponds to the second film 42. A mirror 72 is located in the housing 20 and corresponds to the focusing mirror 71. The output end 73 is located outside the housing 20 and corresponds to the mirror 72. Moreover, the focusing mirror 71 can focus the laser beam 30 outputted by the laser crystal 3 through the second film 42 into the mirror 72, and the focusing mirror 71 is focused by the mirror 72. The laser beam 30 is reflected or outputted outside of the output terminal 73.

第2A圖至第2F圖係分別繪示本揭露第1A圖之雷射裝置1之各種不同態樣,且第2A圖至第2F圖之雷射裝置1可應用於第3A圖至第3B圖之雷射裝置1a與第4A圖至第4B圖之雷射裝置1b中。 2A to 2F are respectively different aspects of the laser device 1 of the first embodiment, and the laser device 1 of the 2A to 2F can be applied to the 3A to 3B. The laser device 1a is in the laser device 1b of FIGS. 4A to 4B.

如第2A圖所示,該雷射裝置1之殼體2可具有一環形之內壁21,且該雷射裝置1可具有二燈條5。如第2B圖所示,該殼體2可具有一環形之內壁21,且該雷射裝置1可具有三燈條5。如第2C圖所示,該殼體2可具有一環形之內壁21,且該雷射裝置1可具有四燈條5。 As shown in FIG. 2A, the housing 2 of the laser device 1 can have an annular inner wall 21, and the laser device 1 can have two light bars 5. As shown in FIG. 2B, the housing 2 can have an annular inner wall 21, and the laser device 1 can have three light bars 5. As shown in FIG. 2C, the housing 2 can have an annular inner wall 21, and the laser device 1 can have four light bars 5.

又,如第2D圖所示,該殼體2可具有一環形之內壁21,且該雷射裝置1可具有五燈條5。如第2E圖所示,該殼體2可具有五邊形之內壁21,且該雷射裝置1可具有五燈條5。如第2F圖所示,該殼體2可具有六邊形之內壁21,且該雷射裝置1可具有六燈條5。 Further, as shown in FIG. 2D, the housing 2 may have an annular inner wall 21, and the laser device 1 may have five light bars 5. As shown in FIG. 2E, the housing 2 can have a pentagonal inner wall 21, and the laser device 1 can have five light bars 5. As shown in FIG. 2F, the housing 2 may have a hexagonal inner wall 21, and the laser device 1 may have six light bars 5.

上述燈條5(或下列導光條5b)彼此間隔之角度θ可依運算式θ=360°/N±10%計算之,其中,N為該些燈條5之數量。以第2B圖為例,三燈條5彼此間隔之角度θ=360°/3±10%,也就是該角度θ可介於132度(即120度加12度)至 108度(即120度減12度)之間。 The angle θ at which the above-mentioned light bar 5 (or the following light guiding strip 5b) is spaced apart from each other can be calculated according to the calculation formula θ=360°/N±10%, where N is the number of the light bars 5. Taking FIG. 2B as an example, the angle between the three light bars 5 is θ=360°/3±10%, that is, the angle θ can be between 132 degrees (ie 120 degrees plus 12 degrees) to Between 108 degrees (ie 120 degrees minus 12 degrees).

第3A圖與第3B圖係分別繪示本揭露第一實施例之雷射裝置1a於二個不同方向(如側向及正向)之剖視圖。如圖所示,上述第1A圖至第2F圖之各燈條5可為複數個發光二極體(LED)5a串接而成,或各燈條5可為複數個發光二極體(LED)5a排列而成,各燈條5亦可為一發光二極體(LED)燈管。該些發光二極體5a均可具有承載部51與發光部52,該些發光二極體5a之發光部52或LED燈管可產生該光線50以照射該雷射晶體3。 3A and 3B are cross-sectional views showing the laser device 1a of the first embodiment in two different directions (such as lateral and forward directions), respectively. As shown in the figure, each of the light bars 5 of the above-mentioned 1A to 2F diagrams may be formed by connecting a plurality of light-emitting diodes (LEDs) 5a in series, or each of the light-emitting strips 5 may be a plurality of light-emitting diodes (LEDs). 5a is arranged, and each of the light bars 5 can also be a light-emitting diode (LED) lamp. Each of the light-emitting diodes 5a may have a carrying portion 51 and a light-emitting portion 52. The light-emitting portion 52 or the LED tube of the light-emitting diodes 5a may generate the light 50 to illuminate the laser crystal 3.

該些發光二極體5a之波長可介於950至980奈米之間,並高於習知技術之閃光燈燈管之波長(介於220至280奈米之間)。因此,本揭露以該些發光二極體5a搭配該雷射晶體3能減少該光線50轉換成熱源,並提升該光線50轉換成該雷射光束30之轉換效能。 The wavelength of the light-emitting diodes 5a may be between 950 and 980 nm, and is higher than the wavelength of the flash lamp of the prior art (between 220 and 280 nm). Therefore, the present invention can reduce the conversion of the light 50 into a heat source by using the light-emitting diodes 5a with the laser crystal 3, and enhance the conversion performance of the light 50 into the laser beam 30.

第4A圖與第4B圖係分別繪示本揭露第二實施例之雷射裝置1b於二個不同方向(如側向及正向)之剖視圖,第5圖係繪示本揭露第4B圖之雷射裝置1b之部分放大圖。 4A and 4B are respectively a cross-sectional view of the laser device 1b according to the second embodiment in two different directions (such as lateral and forward), and FIG. 5 is a diagram showing the fourth embodiment of the disclosure. A partially enlarged view of the laser device 1b.

如第4A圖至第4B圖所示,雷射裝置1b可具有至少二導光條5b,如第4A圖顯示六導光條5b。該導光條5b可具有一斜面53與複數V型溝槽54,該斜面53面向或接觸該殼體2之該環形或多邊形之內壁21,且該些V型溝槽54面向該雷射晶體3。 As shown in Figs. 4A to 4B, the laser device 1b may have at least two light guiding strips 5b, as shown in Fig. 4A to show six light guiding strips 5b. The light guiding strip 5b can have a slope 53 and a plurality of V-shaped grooves 54 facing or contacting the annular or polygonal inner wall 21 of the casing 2, and the V-shaped grooves 54 face the laser. Crystal 3.

如第4B圖所示,該導光條5b之該些V型溝槽54可具有相同尺寸或相同角度β(見第5圖)。或者,如第5圖 所示,該導光條5b之該些V型溝槽54可依據方向D由疏至密或由大至小排列。 As shown in Fig. 4B, the V-shaped grooves 54 of the light guiding strip 5b may have the same size or the same angle β (see Fig. 5). Or, as shown in Figure 5 As shown, the V-shaped grooves 54 of the light guiding strip 5b can be arranged from the dense to the dense or from the largest to the smallest according to the direction D.

如第5圖所示,該導光條5b之該斜面53與該殼體2之該環形或多邊形之內壁21之間的夾角α可介於1度至20度,如1、5、10、15或20度。而且,該導光條5b之該些V型溝槽54之角度β可介於5度至85度之間,如20、40、60或80度。 As shown in FIG. 5, the angle α between the inclined surface 53 of the light guiding strip 5b and the annular or polygonal inner wall 21 of the casing 2 may be between 1 and 20 degrees, such as 1, 5, and 10. , 15 or 20 degrees. Moreover, the angle β of the V-shaped grooves 54 of the light guiding strip 5b may be between 5 degrees and 85 degrees, such as 20, 40, 60 or 80 degrees.

如第4B圖至第5圖所示,該雷射裝置1b可包括一汞浦光源61與一多芯光纖62。該多芯光纖62分別連接該汞浦光源61與該些導光條5b,該汞浦光源61產生該光線50以通過該多芯光纖62傳導該光線50至該些導光條5b中,且該光線50依序透過該導光條5b之該斜面53與該些V型溝槽54照射至該雷射晶體3。 As shown in FIGS. 4B to 5, the laser device 1b may include a mercury source 61 and a multi-core fiber 62. The multi-core fiber 62 is connected to the merging source 61 and the light guiding strips 5b, respectively, and the illuminating light source 61 generates the ray 50 to conduct the ray 50 through the multi-core fiber 62 to the light guiding strips 5b, and The light rays 50 are sequentially transmitted to the laser crystal 3 through the inclined surface 53 of the light guiding strip 5b and the V-shaped grooves 54.

該汞浦光源61可為雷射二極體(Laser Diode,LD)。該雷射二極體之波長可介於965至980奈米之間,並高於習知技術之閃光燈燈管之波長(介於220至280奈米之間)。因此,本揭露以該雷射二極體61與該導光條5b搭配該雷射晶體3能減少該光線50轉換成熱源,並提升該光線50轉換成該雷射光束30之轉換效能。 The mercury ray source 61 can be a laser diode (LD). The wavelength of the laser diode can be between 965 and 980 nm and is higher than the wavelength of a conventional flash lamp (between 220 and 280 nm). Therefore, in the present disclosure, the laser diode 3 and the light guiding strip 5b are matched with the laser crystal 3 to reduce the conversion of the light 50 into a heat source, and to enhance the conversion efficiency of the light 50 into the laser beam 30.

第6圖係繪示本揭露第一實施例之雷射裝置1a、第二實施例之雷射裝置1b與習知技術之手持式雷射裝置之比較表。 6 is a comparison table of the laser device 1a of the first embodiment, the laser device 1b of the second embodiment, and the hand-held laser device of the prior art.

如圖所示,經實際測量結果,在尺寸方面,上述習知技術之手持式雷射裝置中,殼體之內壁之直徑約3釐米; 反之,本揭露第一實施例之雷射裝置1a中,該殼體2之內壁21之直徑(以環形為例)約2.3釐米,而第二實施例之雷射裝置1b中,該殼體2之內壁21之直徑(以環形為例)約2釐米。因此,本揭露之雷射裝置1a(1b)之尺寸可小於習知技術之手持式雷射裝置之尺寸。 As shown in the figure, in terms of size, in the above-mentioned hand-held laser device of the prior art, the inner wall of the casing has a diameter of about 3 cm; On the other hand, in the laser device 1a of the first embodiment, the diameter (in the case of a ring shape) of the inner wall 21 of the casing 2 is about 2.3 cm, and in the laser device 1b of the second embodiment, the casing The diameter of the inner wall 21 of 2 (in the form of a ring) is about 2 cm. Therefore, the size of the laser device 1a (1b) of the present disclosure can be smaller than that of the prior art handheld laser device.

在重量方面,習知技術之手持式雷射裝置中,殼體、燈管、雷射晶體與水溶液總共約300公克;反之,本揭露第一實施例之雷射裝置1a中,該殼體2、發光二極體5a、雷射晶體3與容置空間23內之冷卻液總共約220公克,而第二實施例之雷射裝置1b中,該殼體2、導光條5b、雷射晶體3與容置空間23內之冷卻液總共約200公克。因此,本揭露之雷射裝置1a(1b)之重量可輕於習知技術之手持式雷射裝置之重量。 In terms of weight, in the handheld laser device of the prior art, the housing, the lamp tube, the laser crystal and the aqueous solution total about 300 gram; otherwise, in the laser device 1a of the first embodiment, the housing 2 The light-emitting diode 5a, the laser crystal 3 and the cooling liquid in the accommodating space 23 have a total of about 220 grams, and in the laser device 1b of the second embodiment, the housing 2, the light guiding strip 5b, and the laser crystal 3 and a total of about 200 grams of coolant in the accommodating space 23. Therefore, the weight of the laser device 1a (1b) of the present disclosure can be lighter than the weight of a conventional hand-held laser device.

在危險性方面,習知技術之手持式雷射裝置中,雷射晶體之二端電極有數百伏特電壓;反之,本揭露第一實施例之雷射裝置1a中,僅有該發光二極體5a之直流電壓(3至24伏特),而第二實施例之雷射裝置1b中,僅有多芯光纖62與導光條5b所傳導之光線50而無電壓。因此,本揭露之雷射裝置1a(1b)之危險性可低於習知技術之手持式雷射裝置之危險性。 In terms of danger, in the handheld laser device of the prior art, the two end electrodes of the laser crystal have a voltage of several hundred volts; conversely, in the laser device 1a of the first embodiment, only the light emitting diode is The DC voltage of the body 5a (3 to 24 volts), and in the laser device 1b of the second embodiment, only the light 50 conducted by the multi-core fiber 62 and the light guiding strip 5b is voltage-free. Therefore, the risk of the laser device 1a (1b) of the present disclosure can be lower than that of the conventional hand-held laser device.

在接收照度方面,習知技術之手持式雷射裝置中,雷射晶體之接收照度約3600瓦/平方米(W/m2);反之,本揭露第一實施例之雷射裝置1a中,該雷射晶體3之接收照度約6000瓦/平方米(W/m2),而第二實施例之雷射裝置1b中, 該雷射晶體3之接收照度約7000瓦/平方米(W/m2)。因此,本揭露之雷射裝置1a(1b)之接收照度可高於習知技術之手持式雷射裝置之接收照度。 In the handheld laser device of the prior art, the receiving illuminance of the laser lens is about 3,600 watts/m 2 (W/m 2 ); otherwise, in the laser device 1a of the first embodiment, The receiving illuminance of the laser crystal 3 is about 6000 watts/square meter (W/m 2 ), and in the laser device 1b of the second embodiment, the receiving illuminance of the laser crystal 3 is about 7000 watts/square meter (W/ m 2 ). Therefore, the receiving illuminance of the laser device 1a (1b) of the present disclosure can be higher than the receiving illuminance of the handheld laser device of the prior art.

由上可知,本揭露之雷射裝置中,主要是將複數燈條或導光條呈環形或對稱排列於雷射晶體之周圍,並分別照射光線至該雷射晶體以輸出一雷射光束,藉此提升該雷射晶體之接收照度、該雷射光束之轉換效能或輸出效能。同時,由第6圖之比較表可知,本揭露之雷射裝置可具有較小之尺寸、較輕之重量、較低之危險性與較高之接收照度。 It can be seen from the above that in the laser device of the present disclosure, the plurality of light bars or light guiding strips are arranged annularly or symmetrically around the laser crystal, and respectively irradiate light to the laser crystal to output a laser beam. Thereby, the receiving illumination of the laser crystal, the conversion performance or the output performance of the laser beam is improved. Meanwhile, as can be seen from the comparison table of FIG. 6, the laser device of the present disclosure can have a smaller size, a lighter weight, a lower risk, and a higher receiving illumination.

上述實施形態僅例示性說明本揭露之原理、特點及其功效,並非用以限制本揭露之可實施範疇,任何熟習此項技藝之人士均可在不違背本揭露之精神及範疇下,對上述實施形態進行修飾與改變。任何運用本揭露所揭示內容而完成之等效改變及修飾,均仍應為下述之申請專利範圍所涵蓋。因此,本揭露之權利保護範圍,應如申請專利範圍所列。 The above-described embodiments are merely illustrative of the principles, features, and functions of the present disclosure, and are not intended to limit the scope of the present disclosure. Any person skilled in the art can practice the above without departing from the spirit and scope of the disclosure. The embodiment is modified and changed. Any equivalent changes and modifications made by the disclosure of the present disclosure should still be covered by the following claims. Therefore, the scope of protection of this disclosure should be as set forth in the scope of the patent application.

1‧‧‧雷射裝置 1‧‧‧ Laser device

2、20‧‧‧殼體 2, 20‧‧‧ shell

21‧‧‧內壁 21‧‧‧ inner wall

23‧‧‧容置空間 23‧‧‧ accommodating space

3‧‧‧雷射晶體 3‧‧‧Laser crystal

30‧‧‧雷射光束 30‧‧‧Laser beam

31‧‧‧第一端面 31‧‧‧ first end face

32‧‧‧第二端面 32‧‧‧second end face

41‧‧‧第一薄膜 41‧‧‧First film

42‧‧‧第二薄膜 42‧‧‧Second film

5‧‧‧燈條 5‧‧‧Light strips

50‧‧‧光線 50‧‧‧Light

71‧‧‧聚焦鏡 71‧‧‧ Focusing mirror

72‧‧‧反射鏡 72‧‧‧Mirror

73‧‧‧輸出端 73‧‧‧ Output

Claims (16)

一種雷射裝置,包括:一殼體,其具有一環形或多邊形之內壁;一雷射晶體,其設置於該殼體中,並位在或鄰近該殼體之該環形或多邊形之內壁之中心;至少二燈條,其設置於該殼體中,並位在或鄰近該殼體之該環形或多邊形之內壁,其中,該些燈條呈環形排列或對稱排列於該雷射晶體之周圍,並分別照射光線至該雷射晶體以通過該雷射晶體輸出一雷射光束;以及第一薄膜與第二薄膜,其分別形成於該雷射晶體之相對之第一端面與第二端面上,且該第一薄膜、雷射晶體與第二薄膜共同構成一共振腔。 A laser device comprising: a housing having an annular or polygonal inner wall; a laser crystal disposed in the housing and located adjacent to or adjacent to the inner or outer wall of the housing a center of at least two light bars disposed in the housing and located adjacent to or adjacent to the inner wall of the annular or polygonal shape of the housing, wherein the light bars are arranged in a ring shape or symmetrically arranged on the laser crystal Surrounding, and respectively irradiating light to the laser crystal to output a laser beam through the laser crystal; and a first film and a second film respectively formed on the opposite first end and the second end of the laser crystal On the end surface, the first film, the laser crystal and the second film together form a resonant cavity. 如申請專利範圍第1項所述之雷射裝置,其中,該殼體更具有一容置空間,且該容置空間中填充有冷卻液,以藉由該冷卻液降低該雷射晶體與該些燈條之溫度。 The laser device of claim 1, wherein the housing further has an accommodating space, and the accommodating space is filled with a cooling liquid to lower the laser crystal by the cooling liquid The temperature of these light bars. 如申請專利範圍第1項所述之雷射裝置,其中,該第一薄膜作為第一反射鏡,且該第一薄膜具有全反射之940至990奈米之波長、與全反射之2650至3000奈米之波長。 The laser device of claim 1, wherein the first film serves as a first mirror, and the first film has a total reflection of 940 to 990 nm, and a total reflection of 2650 to 3000 The wavelength of the nanometer. 如申請專利範圍第1項所述之雷射裝置,其中,該第二薄膜作為第二反射鏡,且該第二薄膜具有全反射之940至990奈米之波長、與部分反射之2650至3000奈 米之波長。 The laser device of claim 1, wherein the second film serves as a second mirror, and the second film has a total reflection of 940 to 990 nm wavelength and a partial reflection of 2650 to 3000 Nai The wavelength of the meter. 如申請專利範圍第4項所述之雷射裝置,其中,該第二薄膜之該部分反射之反射率為90%至99%,且該雷射晶體透過該第二薄膜輸出該雷射光束。 The laser device of claim 4, wherein the portion of the second film reflects a reflectance of 90% to 99%, and the laser crystal outputs the laser beam through the second film. 如申請專利範圍第1項所述之雷射裝置,其中,該些燈條彼此間隔之角度θ依下列運算式計算之:θ=360°/N±10%,N為該些燈條之數量。 The laser device of claim 1, wherein the angle θ of the light bars spaced apart from each other is calculated according to the following formula: θ=360°/N±10%, where N is the number of the light bars. . 如申請專利範圍第1項所述之雷射裝置,其中,各該燈條為複數發光二極體串接或排列而成,且該些發光二極體產生該光線以照射該雷射晶體。 The laser device of claim 1, wherein each of the light bars is formed by arranging or arranging a plurality of light emitting diodes, and the light emitting diodes generate the light to illuminate the laser crystal. 如申請專利範圍第7項所述之雷射裝置,其中,該些發光二極體之波長介於950至980奈米之間。 The laser device of claim 7, wherein the light emitting diodes have a wavelength between 950 and 980 nm. 如申請專利範圍第1項所述之雷射裝置,其中,各該燈條可為LED燈管,且該些LED燈管產生該光線以照射該雷射晶體。 The laser device of claim 1, wherein each of the light bars is an LED tube, and the LED tubes generate the light to illuminate the laser crystal. 一種雷射裝置,包括:一殼體,其具有一環形或多邊形之內壁;一雷射晶體,其設置於該殼體中,並位在或鄰近該殼體之該環形或多邊形之內壁之中心;以及至少二導光條,其設置於該殼體中,並位在或鄰近該殼體之該環形或多邊形之內壁,其中,該些導光條呈環形排列或對稱排列於該雷射晶體之周圍,並分別照射光線至該雷射晶體以通過該雷射晶體輸出一雷射光束。 A laser device comprising: a housing having an annular or polygonal inner wall; a laser crystal disposed in the housing and located adjacent to or adjacent to the inner or outer wall of the housing And at least two light guiding strips disposed in the housing and located at or adjacent to the inner wall of the annular or polygonal shape of the housing, wherein the light guiding strips are arranged in a ring shape or symmetrically arranged thereon The laser crystal is surrounded and irradiated with light to the laser crystal to output a laser beam through the laser crystal. 如申請專利範圍第10項所述之雷射裝置,其中,導光條具有一斜面與複數V型溝槽,該斜面面向或接觸該殼體之該環形或多邊形之內壁,且該些V型溝槽面向該雷射晶體。 The laser device of claim 10, wherein the light guiding strip has a slope and a plurality of V-shaped grooves facing or contacting the inner wall of the ring or the polygon of the casing, and the V The groove faces the laser crystal. 如申請專利範圍第11項所述之雷射裝置,其中,該導光條之該斜面與該殼體之該環形或多邊形之內壁之間的夾角介於1度至20度。 The laser device of claim 11, wherein an angle between the slope of the light guiding strip and the inner wall of the annular or polygonal shape of the housing is between 1 and 20 degrees. 如申請專利範圍第11項所述之雷射裝置,其中,該導光條之該些V型溝槽之角度介於5度至85度之間。 The laser device of claim 11, wherein the V-shaped grooves of the light guiding strip have an angle of between 5 and 85 degrees. 如申請專利範圍第11項所述之雷射裝置,其中,該導光條之該些V型溝槽具有相同尺寸或由疏至密排列。 The laser device of claim 11, wherein the V-shaped grooves of the light guiding strip have the same size or are arranged in a dense to dense manner. 如申請專利範圍第10項所述之雷射裝置,更包括一汞浦光源與一多芯光纖,該多芯光纖分別連接該汞浦光源與該些導光條,該汞浦光源產生該光線以通過該多芯光纖傳導該光線至該些導光條中,且該光線依序透過該導光條之該斜面與該些V型溝槽照射至該雷射晶體。 The laser device of claim 10, further comprising a mercury source and a multi-core fiber, wherein the multi-core fiber is respectively connected to the mercury source and the light guide strips, and the mercury source generates the light The light is transmitted to the light guiding strips through the multi-core optical fiber, and the light is sequentially transmitted to the laser crystal through the inclined surface of the light guiding strip and the V-shaped grooves. 如申請專利範圍第15項所述之雷射裝置,其中,該汞浦光源為雷射二極體,且該雷射二極體之波長介於965至980奈米之間。 The laser device of claim 15, wherein the mercury source is a laser diode, and the wavelength of the laser diode is between 965 and 980 nm.
TW105134526A 2016-10-26 2016-10-26 Laser apparatus TWI605788B (en)

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