TWI543284B - 半導體裝置的製造方法以及打線裝置 - Google Patents
半導體裝置的製造方法以及打線裝置 Download PDFInfo
- Publication number
- TWI543284B TWI543284B TW103143597A TW103143597A TWI543284B TW I543284 B TWI543284 B TW I543284B TW 103143597 A TW103143597 A TW 103143597A TW 103143597 A TW103143597 A TW 103143597A TW I543284 B TWI543284 B TW I543284B
- Authority
- TW
- Taiwan
- Prior art keywords
- tail
- bonding
- wire
- bonding tool
- joint
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
- H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/494—Connecting portions
- H01L2224/4941—Connecting portions the connecting portions being stacked
- H01L2224/49425—Wedge bonds
- H01L2224/49427—Wedge bonds outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
- H01L2224/78353—Ultrasonic horns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7855—Mechanical means, e.g. for severing, pressing, stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
- H01L2224/78611—Feeding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
- H01L2224/78621—Holding means, e.g. wire clampers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/789—Means for monitoring the connection process
- H01L2224/7892—Load or pressure adjusting means, e.g. sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
- H01L2224/85207—Thermosonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8593—Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape
- H01L2224/85947—Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape by mechanical means, e.g. "pull-and-cut", pressing, stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Wire Bonding (AREA)
Description
本發明是有關於一種半導體裝置的製造方法以及打線裝置。
當製造半導體裝置時,例如廣泛採用打線,利用金屬線(wire)將半導體晶片(chip)的電極與基板的電極進行電性連接。作為半導體裝置的製造方法的一方式,已知有楔形接合(wedge bonding)方式,不在金屬線前端形成球(ball)而將金屬線連接於接合對象。根據楔形接合方式,利用金屬線將第1接合點與第2接合點之間連接之後,將自接合工具(bonding tool)的前端延伸出之金屬線的一部分切斷,在接合工具的前端形成用於下次打線的線尾(wire tail),且不進行球形成步驟而將所述線尾直接接合於下次第1接合點。
然而,例如當將第1接合點設為半導體晶片的電極時,有如下情況:接合於第1接合點之後的線尾的前端接觸於半導體
晶片上的鄰接的電極或鈍化膜(passivation film),藉此會導致半導體晶片損傷或不良。
為了解決此種問題,例如專利文獻1所記載般有如下手法,即,與接合對象物不同地另外準備用於將線尾的前端向上方彎曲的構件(模具),在進行向第1接合點的接合之前使接合工具移動至所述構件上而調整線尾的形狀。然而,需要在每次進行打線時均使接合工具移動至遠離接合對象物的位置,從而難以謂之為簡便且有效率的製造方法。或者,鑒於此種問題僅可能產生於第1接合點,而亦考慮藉由使接合順序顛倒的逆接合來解決,但接合順序受到制約,半導體裝置的製造方法的設計自由度無法謂之為高。
[專利文獻1]日本專利特開2003-318216號公報
因此,本發明的目的在於提供一種可解決所述問題的半導體裝置的製造方法以及打線裝置。
本發明的一實施方式的半導體裝置的製造方法包括:線尾形成步驟,利用接合工具在第1接合點與第2接合點之間形成
線弧(wire loop)之後,將自接合工具的前端延伸出的金屬線的一部分切斷,而在接合工具的前端形成線尾;以及線尾彎曲步驟,使接合工具朝形成有線弧的第2接合點下降,將線尾壓抵於第2接合點上的線弧的一部分,藉此以使線尾的前端朝向上方的方式對線尾進行彎曲加工。
根據所述構成,藉由使接合工具朝向接合完成的形成有線弧的第2接合點下降,將線尾壓抵於第2接合點上的線弧的一部分,而進行線尾的彎曲加工。藉此抑制接合工具的移動量,並且無需準備用於彎曲加工的另外的構件,因此可簡便且有效率地進行線尾的彎曲加工。藉此例如在下一打線的第1接合點處的接合中,可防止金屬線的前端接觸於其他鄰接的要素,從而防止半導體裝置發生損傷或者不良,並且可達成設計自由度高、簡便且有效率的半導體裝置的製造方法。
在所述半導體裝置的製造方法中,亦可在線尾彎曲步驟中,將線尾壓抵於即將進行接合之前的第2接合點上的線弧的一部分。
在所述半導體裝置的製造方法中,亦可在線尾彎曲步驟中,將線尾壓抵於第2接合點上的線弧的前端。
在所述半導體裝置的製造方法中,亦可在線尾彎曲步驟中,將線尾壓抵於第2接合點上的線弧的立起部。
在所述半導體裝置的製造方法中,亦可在線尾形成步驟中,一面將金屬線抽出,一面使接合工具上升,且使接合工具向
遠離線弧的方向移動,藉此將金屬線的一部分切斷。
本發明的一實施方式的打線裝置用於利用接合工具在第1接合點與第2接合點之間形成線弧,且包括控制部,對接合工具的動作進行控制,控制部構成為執行以下步驟:將自接合工具的前端延伸出的金屬線的一部分切斷,而在接合工具的前端形成線尾的步驟;以及使接合工具朝向形成有線弧的第2接合點下降,將線尾壓抵於第2接合點上的線弧的一部分,藉此以使線尾的前端朝向上方的方式對所述線尾進行彎曲加工的步驟。
根據所述構成,打線裝置的控制部構成為藉由使接合工具朝向接合完成的形成有線弧的第2接合點下降,將線尾壓抵於第2接合點上的線弧的一部分,而進行線尾的彎曲加工。藉此抑制接合工具的移動量,並且無需準備用於彎曲加工的另外的構件,因此可提供能夠簡便且有效率地進行線尾的彎曲加工的打線裝置。藉此例如在下一打線的第1接合點處的接合中,可防止金屬線的前端接觸於其他鄰接的要素,從而可提供防止半導體裝置發生損傷或者不良,並且能夠進行設計自由度高、簡便且有效率的處理的打線裝置。
根據本發明,可簡便且有效率地進行打線中的線尾的彎曲加工。藉此可提供防止半導體裝置發生損傷或者不良,並且能夠進行設計自由度高、簡便且有效率的處理的半導體裝置的製造方法以及打線裝置。
1‧‧‧打線裝置
10‧‧‧XY驅動機構(線性馬達)
12‧‧‧Z驅動機構(線性馬達)
14‧‧‧支軸
16‧‧‧接合台
20‧‧‧接合臂
21a‧‧‧頂面
21b‧‧‧底面
22‧‧‧臂基端部
23‧‧‧連結部
24‧‧‧臂前端部
25a、25b、25c‧‧‧狹縫
26‧‧‧凹部
30‧‧‧超音波焊頭
32‧‧‧焊頭固定螺釘
40‧‧‧接合工具(毛細管)
41‧‧‧插通孔
42‧‧‧金屬線
43‧‧‧線尾
43a‧‧‧線尾的前端
43b‧‧‧線尾的除前端以外的部分
44‧‧‧線夾
46‧‧‧線張緊器
47‧‧‧按壓部
48‧‧‧按壓面
50‧‧‧負荷感測器
52‧‧‧施壓用螺釘
60‧‧‧超音波振動元件
80‧‧‧控制部
82‧‧‧操作部
84‧‧‧顯示部
94‧‧‧金屬線的一部分
100‧‧‧接合對象物
110‧‧‧半導體晶片
112‧‧‧電極
114‧‧‧鈍化膜
120‧‧‧基板
122‧‧‧電極
90、130‧‧‧線弧
134‧‧‧接合部
135‧‧‧線弧的前端
136‧‧‧線弧的立起部
S10~S16‧‧‧步驟
t1~t7‧‧‧時刻
X、Y、Z‧‧‧方向
Z0、Z1、Z2、Z3、Z4‧‧‧高度
圖1是表示本實施方式的打線裝置的圖。
圖2(A)及圖2(B)是本實施方式的打線裝置的接合臂(bonding arm)的平面的俯視圖及仰視圖。
圖3是本實施方式的半導體裝置的製造方法的流程圖(flow chart)。
圖4(A)~圖4(C)是用於對本實施方式的半導體裝置的製造方法進行說明的圖。
圖5(A)~圖5(D)是用於對本實施方式的半導體裝置的製造方法進行說明的圖。
圖6是關於本實施方式的半導體裝置的製造方法的時序圖(timing chart)。
圖7是用於對本實施方式的變形例的半導體裝置的製造方法進行說明的圖。
以下,對本發明的實施方式進行說明。在以下的圖式的記載中,相同或類似的構成要素以相同或類似的符號表示。圖式為例示,各部分的尺寸或形狀為示意性,不應將本申請案發明的技術範圍限定於所述實施方式而解釋。
圖1是表示本實施方式的打線裝置的圖,圖2(A)、(B)
是打線裝置中的接合臂的局部放大圖,圖2(A)是接合臂的俯視圖,圖2(B)是接合臂的仰視圖。
如圖1所示,打線裝置1包括XY驅動機構10、Z驅動機構12、接合臂20、超音波焊頭(ultrasonic horn)30、接合工具40、負荷感測器(sensor)50、超音波振動元件60以及控制部80。
XY驅動機構10構成為可沿XY軸方向(平面方向)移動,在XY驅動機構(線性馬達(linear motor))10設置有Z驅動機構(線性馬達)12,所述Z驅動機構12使接合臂20可沿Z軸方向(上下方向)移動。
接合臂20由支軸14支撐,相對於XY驅動機構10而擺動自如地構成。接合臂20是以自XY驅動機構10向放置有接合對象物100的接合台(bonding stage)16延伸出的方式而形成為大致長方體。接合臂20包括:臂基端部22,安裝於XY驅動機構10;臂前端部24,位於臂基端部22的前端側,且安裝有超音波焊頭30;以及連結部23,將臂基端部22與臂前端部24連結,且具有可撓性。所述連結部23包括:規定寬度的狹縫(slit)25a、狹縫25b,自接合臂20的頂面21a向底面21b的方向延伸出;以及規定寬度的狹縫25c,自接合臂20的底面21b向頂面21a的方向延伸出。如此,連結部23利用各狹縫25a、狹縫25b、狹縫25c而局部地作為薄壁部構成,因此,臂前端部24是以相對於臂基端部22而撓曲的方式構成。
如圖1及圖2(B)所示,在接合臂20的底面21b側,
形成有收容超音波焊頭30的凹部26。超音波焊頭30在收容於接合臂20的凹部26的狀態下,利用焊頭固定螺釘32而安裝於臂前端部24。所述超音波焊頭30在自凹部26突出的前端部保持有接合工具40,且在凹部26內設置有產生超音波振動的超音波振動元件60。利用超音波振動元件60而產生超音波振動,該超音波振動利用超音波焊頭30而傳遞至接合工具40,從而可經由接合工具40對接合對象賦予超音波振動。超音波振動元件60例如為壓電式(piezo)振動元件。
另外,如圖1及圖2(A)所示,在接合臂20的頂面21a側,自頂面21a朝底面21b依序形成有狹縫25a及狹縫25b。上部的狹縫25a較下部的狹縫25b更寬地形成。而且,在所述較寬地形成的上部的狹縫25a,設置有負荷感測器50。負荷感測器50利用施壓用螺釘52而固定於臂前端部24。負荷感測器50以夾入的方式配置於臂基端部22與臂前端部24之間。即,負荷感測器50自超音波焊頭30的長度方向的中心軸向相對於接合對象接近/遠離的方向偏移(offset),且安裝於接合臂20的旋轉中心與臂前端部24的超音波焊頭30的安裝面(即,臂前端部24的接合工具40側的前端面)之間。而且,如上所述,保持接合工具40的超音波焊頭30安裝於臂前端部24,因此,若利用來自接合對象的反作用力對接合工具40的前端施加負荷,臂前端部24會相對於臂基端部22而撓曲,從而在負荷感測器50可檢測出負荷。負荷感測器50例如為壓電式負荷感測器。
接合工具40用於引導金屬線42,例如為設置有插通孔41的毛細管(capillary)(參照圖4(A))。此時,在接合工具40的插通孔41中插通有用於接合的金屬線42,且構成為可將金屬線42的一部分自該接合工具40的前端抽出。而且,在接合工具40的前端,設置有用於對金屬線42進行按壓的按壓部47(參照圖4(A))。按壓部47具有繞接合工具40的插通孔41的軸方向為旋轉對稱的形狀,且在插通孔41的周圍的下表面具有按壓面48。
接合工具40利用彈簧力等而可更換地安裝於超音波焊頭30。而且,在接合工具40的上方設置有線夾(wire clamper)44,線夾44構成為在規定的時序將金屬線42束緊或釋放。在線夾44的更上方設置有線張緊器(wire tensioner)46,線張緊器46構成為供金屬線42插通,且對接合中的金屬線42賦予適度的張力。
金屬線42的材料自易於加工與電阻低等方面適當選擇,例如使用金(Au)、鋁(Al)、銅(Cu)或銀(Ag)等。另外,金屬線42自接合工具40的前端延伸出的一部分43接合於第1接合點。
回到圖1,控制部80連接於XY驅動機構10、Z驅動機構12、超音波焊頭30(超音波振動元件60)以及負荷感測器50,利用控制部80對所述構成的動作進行控制,藉此可進行用於打線的必要處理。控制部80包括介面(interface)(未圖示),所述介面在與例如XY驅動機構10、Z驅動機構12、負荷感測器50、超
音波焊頭30(超音波振動元件60)、線夾44等各構成之間進行信號的收發。具體而言,控制部80進行接合工具40的XYZ軸方向的移動距離或Z方向的負荷的控制、線夾44的開閉動作、對接合工具40賦予的超音波振動的時序或時間以及刮擦(scrub)動作的控制等與接合工具的動作相關的控制。
另外,在控制部80,連接有用於輸入控制資訊的操作部82、以及用於輸出控制資訊的顯示部84,藉此作業者可一面利用顯示部84瞭解畫面,一面利用操作部82輸入必要的控制資訊。另外,控制部80是包括中央處理單元(Central Processing Unit,CPU)及記憶體(memory)等的電腦(computer)裝置,且在記憶體中預先儲存有用於進行打線所需的處理的接合程式(bonding program)等。控制部80包括用於進行各處理的手段(用於使電腦執行各處理的程式),所述各處理將在後述的半導體裝置的製造方法中進行說明,且是用於對接合工具40的動作進行控制。
接下來,參照圖3~圖6,對本實施方式的半導體裝置的製造方法進行說明。所述半導體裝置的製造方法是使用所述打線裝置1而進行。
此處,圖3是半導體裝置的製造方法的流程圖,圖4(A)~圖4(C)及圖5(A)~圖5(D)表示打線的處理。此外,圖6是關於半導體裝置的製造方法的時序圖。另外,圖4(A)所示的XYZ軸的朝向亦同樣適用於圖4(B)~圖4(C)、圖5(A)~圖5(D)以及圖6。
首先,在接合台16上準備接合對象物100。
如圖1所示,接合對象物100具有將利用本實施方式的半導體裝置的製造方法而電性連接的第1接合點與第2接合點。此處,所謂第1接合點是指利用金屬線而連接的兩點間中的最初接合的部位,所謂第2接合點是指所述兩點間中的後續接合的部位。
接合對象物100是包含至少一個半導體晶片的半導體裝置,例如圖1所示,包括具有作為第1接合點的多個電極112的半導體晶片110、以及具有作為第2接合點的多個電極122的基板120。在半導體晶片110的電極112的形成面(形成有半導體元件的一側的表面),形成有作為保護膜的鈍化膜114(圖1中省略,參照圖5(D)),多個電極112分別自鈍化膜114的開口部露出。半導體晶片110搭載於基板120上。此種實施方式中,通常將按自半導體晶片110的電極112至基板120的電極122的順序接合的情況稱為正接合,在以下的例中對正接合的例進行說明,但本實施方式的打線也適用於按自基板120的電極122至半導體晶片110的電極112的順序接合的所謂逆接合。
<時刻t0以前及時刻t0~時刻t1的處理>
如圖3所示,利用金屬線將作為第1接合點的半導體晶片110的電極112與作為第2接合點的基板120的電極122連接(S10)。
具體而言,如圖1所示,將自接合工具40的前端延伸出的金屬線的一部分(線尾)接合於半導體晶片110的電極112
(第1接合點)之後,一面將金屬線自接合工具40的前端抽出,一面使接合工具40沿規定的軌跡移動而移動至基板120的電極122(第2接合點)的上方後,使接合工具40下降。然後,如圖6所示,在時刻t0至時刻t1的期間,在閉合線夾44的狀態下將接合工具40在高度Z0進行加壓,而如圖4(A)所示,將金屬線42的一部分94接合於基板120的電極122。具體而言,利用接合工具40的按壓部47(按壓面48)對金屬線42的一部分94進行加壓,並且產生熱、超音波以及進行刮擦動作,藉此將金屬線與電極接合。如此,在作為第1接合點的電極112與作為第2接合點的電極122之間形成將兩者連接的線弧90。
<時刻t1~時刻t3的處理>
結束第2接合點處的接合之後,一面將金屬線42抽出,一面使接合工具40上升至高度Z1(S11)。例如圖6所示,在時刻t1,使Z驅動機構12運作而使接合工具40上升,然後使XY驅動機構10運作而使接合工具40向遠離線弧90的方向(Y方向)移動。在此期間,如圖6所示,線夾44設為打開的狀態。如此伴隨接合工具40的移動量,將金屬線42自接合工具40的前端抽出規定量。如此在時刻t2,如圖4(B)所示,在接合工具40的前端與第2接合點之間延伸出規定長度的金屬線42。
之後,如圖3所示,使接合工具40進一步向遠離線弧90的方向(Y方向)移動,而將金屬線42切斷(S12)。具體而言,如圖6所示,在時刻t2,在閉合線夾44的狀態下使XY驅動機構
10進一步運作,藉此使接合工具40向遠離線弧90的方向移動,之後使Z驅動機構12運作,在時刻t3,如圖4(C)所示,使接合工具40上升至高度Z2。如此,在時刻t2至時刻t3的期間的任一時序,對金屬線42施加拉伸應力而將金屬線42的一部分切斷,在接合工具40的前端形成線尾43。由於藉由使接合工具40向遠離線弧90的方向移動而將金屬線42切斷,故而如圖4(C)所示,線尾43依照接合工具40的移動方向,而成為向與Z方向交叉的方向彎曲的形狀。例如,亦可使接合工具40在將第1接合點與第2接合點連結的Y方向的直線上移動,而使線尾43以成為向Y方向彎曲的形狀的方式延伸出。另外,金屬線42被切斷的時序並無特別限定,例如圖6所示,既可在時刻t2以後XY驅動機構10運作的期間中將金屬線42切斷,亦可在XY驅動機構10的運作停止之後Z驅動機構12運作而使接合工具40上升的期間中將金屬線42切斷。
藉由此種處理,如圖4(C)所示,可形成為了將第1接合點與第2接合點之間連接而呈規定形狀延伸出的線弧130。線弧130在作為第2接合點的電極122上具有接合部134。接合部134藉由接合工具40的接合而以較金屬線直徑更薄(例如1/3左右)的方式塑性變形。
<時刻t3~時刻t6的處理>
在形成線尾43之後,使接合工具40向已接合完成的第2接合點的上方移動(S13)。具體而言,如圖6所示,自時刻t3至時
刻t4,藉由使XY驅動機構10運作而使接合工具40移動,在時刻t4,如圖5(A)所示,將線尾43配置於第2接合點的上方。當在基板120上有多個接合完成的第2接合點時,較佳為向即將進行接合之前的第2接合點移動。藉此可使接合工具40的移動量成為最小,且線尾43的延伸方向與第2接合點上的線弧130的延伸方向大致相同,因此無需特別調整接合工具40的朝向,而可容易地進行後述的線尾43的彎曲加工。
然後,如圖3所示,將線尾43壓抵於第2接合點上的線弧130的一部分(S14)。具體而言,如圖6所示,自時刻t4至時刻t5,使Z驅動機構12運作而使接合工具40朝向第2接合點下降,在時刻t5至時刻t6的期間,以將線尾43壓抵於線弧130的一部分的方式使接合工具40在高度Z3進行加壓。
例如圖5(B)所示,亦可將線尾43壓抵於第2接合點上的線弧130的接合部(縫點(stitch))134(具體而言為接合部134的前端135)。由於第2接合點上的前端135自電極122的表面(或基板120的表面)突起(形成有階差),故而藉由將線尾43壓抵於線弧130的前端135,而能夠以前端135為起點,以使線尾43的前端43a朝向上方的方式對線尾43進行彎曲加工。另外,線尾的除前端43a以外的部分43b藉由接合工具40的按壓部47(按壓面48)的按壓,而被加工成向與XY平面大致平行的方向延伸出。如此,可將線尾43加工成具有如下形狀:具有以自XY平面朝向斜上方的方式延伸出的前端43a,且除所述前端43a以外的部
分43b與XY平面大致平行地延伸出。
<時刻t6~時刻t7以及時刻t7以後的處理>
之後,如圖6所示,自時刻t6至時刻t7,使Z驅動機構12運作而使接合工具40上升至高度Z4(S15)。如此在時刻t7,如圖5(C)所示,可形成將第1接合點與第2接合點連接的線弧130,並且在接合工具40的前端形成被彎曲加工成規定形狀的線尾43。然後,如圖3所示,判定是否需要對接合對象物100進行下次打線(S16),當需要時(S16是),使接合工具40向用於下次打線的第1接合點移動,將線尾43接合於第1接合點,且重複進行S10~S15的一連串的步驟。另一方面,當無需進行下一打線,對接合對象物100的打線全部結束時(S16否),結束對所述接合對象物100的打線步驟。
當進行下次打線時(S16是),如圖6所示,在時刻t7以後,使XY驅動機構10運作而使接合工具40向下一第1接合點的上方移動。之後,使接合工具40朝向作為第1接合點的半導體晶片110的電極112下降,如圖5(D)所示,將自接合工具40的前端延伸出的線尾43接合於電極112。此處,半導體晶片110搭載於基板120上,在半導體晶片110中的電極112的形成面(形成有半導體元件的一側的表面),設置有作為保護膜的鈍化膜114。而且,線尾43的一部分(除前端以外的部分43b)接合於電極122中的自鈍化膜114的開口部露出的區域。由於線尾43的前端43a以自XY平面朝向斜上方的方式延伸出,故而可防止線尾
43接觸於鄰接的其他要素(例如鈍化膜114或鄰接的其他電極等)。
如上所述,根據本實施方式,藉由使接合工具40朝向接合完成的形成有線弧130的第2接合點(電極122)下降,將線尾43壓抵於第2接合點上的線弧130的一部分,而進行線尾43的彎曲加工。藉此抑制接合工具40的移動量,並且無需準備用於彎曲加工的另外的構件,因此可簡便且有效率地進行線尾的彎曲加工。藉此例如在下次打線的第1接合點處的接合中,可防止金屬線的前端接觸於其他鄰接的要素,從而防止半導體裝置發生損傷或者不良,並且可進行設計自由度高、簡便且有效率的處理。
本發明並不限定於所述實施方式,可進行各種變形而應用。
在所述實施方式中,如圖5(B)所示,表示有將線尾43壓抵於第2接合點上的線弧130的(接合部134的)前端135的例,但本發明並不限於此例。例如圖7所示,亦可將線尾43壓抵於第2接合點上的線弧130的立起部136。由於第2接合點上的立起部136自線弧130的接合部134突起(形成有階差),故而以線弧130的立起部136為起點,此時亦能夠以使線尾43的前端43a朝向上方的方式對線尾43進行彎曲加工。
另外,接合工具40向XYZ方向的移動並不限定於所述實施方式的例所示的構成,例如亦可包括不僅描繪直線軌道且描繪曲線軌道的處理。另外,接合工具40的形狀亦不限定於圖示者。
藉由所述發明的實施方式所說明的實施例或應用例可
根據用途而適當組合、或者施加變更或改良而使用,本發明並不限定於所述實施方式的記載。根據申請專利範圍的記載可知,所述組合而成或者施加變更或改良而成的實施方式亦可包含於本發明的技術範圍內。
S10~S16‧‧‧步驟
Claims (6)
- 一種半導體裝置的製造方法,包括:線尾形成步驟,利用接合工具在第1接合點與第2接合點之間形成線弧之後,將自所述接合工具的前端延伸出的金屬線的一部分切斷,而在所述接合工具的前端形成線尾;以及線尾彎曲步驟,使所述接合工具朝向形成有所述線弧的所述第2接合點下降,將所述線尾壓抵於所述第2接合點上的所述線弧的一部分,藉此以使所述線尾的前端朝向上方的方式對所述線尾進行彎曲加工。
- 如申請專利範圍第1項所述的半導體裝置的製造方法,其中在所述線尾彎曲步驟中,將所述線尾壓抵於即將進行接合之前的所述第2接合點上的所述線弧的一部分。
- 如申請專利範圍第1項所述的半導體裝置的製造方法,其中在所述線尾彎曲步驟中,將所述線尾壓抵於所述第2接合點上的所述線弧的前端。
- 如申請專利範圍第1項所述的半導體裝置的製造方法,其中在所述線尾彎曲步驟中,將所述線尾壓抵於所述第2接合點上的所述線弧的立起部。
- 如申請專利範圍第1項所述的半導體裝置的製造方法,其中在所述線尾形成步驟中,一面將所述金屬線抽出,一面使所述接合工具上升,且使所述接合工具向遠離所述線弧的方向移動,藉此將所述金屬線的一部分切斷。
- 一種打線裝置,用於利用接合工具在第1接合點與第2接合點之間形成線弧,所述打線裝置包括:控制部,對所述接合工具的動作進行控制,且所述控制部構成為執行以下步驟:將自所述接合工具的前端延伸出的金屬線的一部分切斷,而在所述接合工具的前端形成線尾的步驟;以及使所述接合工具朝向形成有所述線弧的所述第2接合點下降,將所述線尾壓抵於所述第2接合點上的所述線弧的一部分,藉此以使所述線尾的前端朝向上方的方式對所述線尾進行彎曲加工的步驟。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014023421 | 2014-02-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201532157A TW201532157A (zh) | 2015-08-16 |
TWI543284B true TWI543284B (zh) | 2016-07-21 |
Family
ID=53778072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103143597A TWI543284B (zh) | 2014-02-10 | 2014-12-15 | 半導體裝置的製造方法以及打線裝置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9978713B2 (zh) |
JP (1) | JP6255583B2 (zh) |
KR (1) | KR101910654B1 (zh) |
CN (1) | CN106233444B (zh) |
SG (1) | SG11201606608XA (zh) |
TW (1) | TWI543284B (zh) |
WO (1) | WO2015119275A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113796002A (zh) * | 2019-04-29 | 2021-12-14 | 库利克和索夫工业公司 | 直线电机及包括其的焊线机 |
CN114571101B (zh) * | 2022-05-05 | 2022-09-02 | 济南森峰激光科技股份有限公司 | 一种自动化板材激光加工生产线 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3623649A (en) * | 1969-06-09 | 1971-11-30 | Gen Motors Corp | Wedge bonding tool for the attachment of semiconductor leads |
JPS5925377B2 (ja) * | 1980-04-05 | 1984-06-16 | 株式会社新川 | ワイヤボンデイング方法 |
US4422568A (en) * | 1981-01-12 | 1983-12-27 | Kulicke And Soffa Industries, Inc. | Method of making constant bonding wire tail lengths |
US4437604A (en) * | 1982-03-15 | 1984-03-20 | Kulicke & Soffa Industries, Inc. | Method of making fine wire interconnections |
DE3343738C2 (de) * | 1983-12-02 | 1985-09-26 | Deubzer-Eltec GmbH, 8000 München | Verfahren und Vorrichtung zum Bonden eines dünnen, elektrisch leitenden Drahtes an elektrische Kontaktflächen von elektrischen oder elektronischen Bauteilen |
JPH0228338A (ja) * | 1988-07-18 | 1990-01-30 | Nec Corp | ワイヤボンディング方法 |
US4976392A (en) * | 1989-08-11 | 1990-12-11 | Orthodyne Electronics Corporation | Ultrasonic wire bonder wire formation and cutter system |
US6835898B2 (en) * | 1993-11-16 | 2004-12-28 | Formfactor, Inc. | Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures |
JP3344235B2 (ja) * | 1996-10-07 | 2002-11-11 | 株式会社デンソー | ワイヤボンディング方法 |
JP2000082717A (ja) * | 1998-09-07 | 2000-03-21 | Shinkawa Ltd | ワイヤボンディング方法 |
JP4088015B2 (ja) * | 2000-03-24 | 2008-05-21 | 株式会社新川 | 湾曲状ワイヤの形成方法 |
JP2002064117A (ja) | 2000-08-22 | 2002-02-28 | Mitsubishi Electric Corp | ワイヤボンディング方法、ワイヤボンディング装置および半導体装置 |
JP3780962B2 (ja) * | 2002-03-04 | 2006-05-31 | 株式会社デンソー | ワイヤボンディング方法 |
JP3767512B2 (ja) | 2002-04-25 | 2006-04-19 | 株式会社デンソー | ワイヤボンディング方法 |
US7347352B2 (en) * | 2003-11-26 | 2008-03-25 | Kulicke And Soffa Industries, Inc. | Low loop height ball bonding method and apparatus |
TWI248186B (en) * | 2004-01-09 | 2006-01-21 | Unaxis Internat Tranding Ltd | Method for producing a wedge-wedge wire connection |
JP4215693B2 (ja) * | 2004-08-16 | 2009-01-28 | 株式会社新川 | ワイヤボンディング方法 |
JP4298665B2 (ja) * | 2005-02-08 | 2009-07-22 | 株式会社新川 | ワイヤボンディング方法 |
US8016182B2 (en) * | 2005-05-10 | 2011-09-13 | Kaijo Corporation | Wire loop, semiconductor device having same and wire bonding method |
JP4530975B2 (ja) * | 2005-11-14 | 2010-08-25 | 株式会社新川 | ワイヤボンディング方法 |
JP4530984B2 (ja) * | 2005-12-28 | 2010-08-25 | 株式会社新川 | ワイヤボンディング装置、ボンディング制御プログラム及びボンディング方法 |
JP4509043B2 (ja) * | 2006-02-14 | 2010-07-21 | 株式会社新川 | スタッドバンプの形成方法 |
JP4679427B2 (ja) | 2006-04-24 | 2011-04-27 | 株式会社新川 | ボンディング装置のテールワイヤ切断方法及びプログラム |
KR100932680B1 (ko) * | 2007-02-21 | 2009-12-21 | 가부시키가이샤 신가와 | 반도체 장치 및 와이어 본딩 방법 |
US20090127317A1 (en) * | 2007-11-15 | 2009-05-21 | Infineon Technologies Ag | Device and method for producing a bonding connection |
WO2009096950A1 (en) * | 2008-01-30 | 2009-08-06 | Kulicke And Soffa Industries, Inc. | Wire loop and method of forming the wire loop |
JP5115488B2 (ja) * | 2009-02-04 | 2013-01-09 | 株式会社デンソー | ワイヤボンディング方法 |
TWI506710B (zh) * | 2009-09-09 | 2015-11-01 | Renesas Electronics Corp | 半導體裝置之製造方法 |
JP4787374B2 (ja) * | 2010-01-27 | 2011-10-05 | 株式会社新川 | 半導体装置の製造方法並びにワイヤボンディング装置 |
KR101746614B1 (ko) * | 2011-01-07 | 2017-06-27 | 삼성전자 주식회사 | 발광소자 패키지 및 그 제조방법 |
JP5662227B2 (ja) * | 2011-04-05 | 2015-01-28 | 株式会社新川 | ボンディング装置及びボンディングツールの洗浄方法 |
JP5734236B2 (ja) * | 2011-05-17 | 2015-06-17 | 株式会社新川 | ワイヤボンディング装置及びボンディング方法 |
US20130119117A1 (en) | 2011-11-04 | 2013-05-16 | Invensas Corporation | Bonding wedge |
JP2014207430A (ja) * | 2013-03-21 | 2014-10-30 | ローム株式会社 | 半導体装置 |
TWI517277B (zh) * | 2014-02-14 | 2016-01-11 | 新川股份有限公司 | 打線裝置以及半導體裝置的製造方法 |
-
2014
- 2014-12-15 TW TW103143597A patent/TWI543284B/zh active
-
2015
- 2015-02-09 SG SG11201606608XA patent/SG11201606608XA/en unknown
- 2015-02-09 KR KR1020167024658A patent/KR101910654B1/ko active IP Right Grant
- 2015-02-09 JP JP2015561079A patent/JP6255583B2/ja active Active
- 2015-02-09 CN CN201580017569.1A patent/CN106233444B/zh not_active Expired - Fee Related
- 2015-02-09 WO PCT/JP2015/053535 patent/WO2015119275A1/ja active Application Filing
-
2016
- 2016-08-10 US US15/232,828 patent/US9978713B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2015119275A1 (ja) | 2015-08-13 |
SG11201606608XA (en) | 2016-09-29 |
CN106233444B (zh) | 2019-01-15 |
KR20160115990A (ko) | 2016-10-06 |
US20160351535A1 (en) | 2016-12-01 |
US9978713B2 (en) | 2018-05-22 |
CN106233444A (zh) | 2016-12-14 |
TW201532157A (zh) | 2015-08-16 |
JP6255583B2 (ja) | 2018-01-10 |
JPWO2015119275A1 (ja) | 2017-03-30 |
KR101910654B1 (ko) | 2018-10-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI668773B (zh) | 引線接合裝置和半導體裝置的製造方法 | |
JP2008543115A (ja) | ワイヤ・ボンディング・キャピラリ装置及び方法 | |
US7918378B1 (en) | Wire bonding deflector for a wire bonder | |
TWI557821B (zh) | 半導體裝置的製造方法以及打線裝置 | |
TWI585927B (zh) | 半導體裝置的製造方法、半導體裝置以及打線裝置 | |
TWI543284B (zh) | 半導體裝置的製造方法以及打線裝置 | |
US20120032354A1 (en) | Wirebonding method and device enabling high-speed reverse wedge bonding of wire bonds | |
US20160358883A1 (en) | Bump forming method, bump forming apparatus, and semiconductor device manufacturing method | |
JP4369401B2 (ja) | ワイヤボンディング方法 | |
JP2015173205A (ja) | 半導体装置及びワイヤボンディング装置 | |
KR102411252B1 (ko) | 와이어 본딩 장치 |