TWI525227B - Electroplating treatment device, electroplating treatment method and memory medium - Google Patents

Description

Plating treatment device, plating treatment method and memory medium

The present invention relates to a plating apparatus which is formed in a concave portion of an insulating layer and which is provided with a concave portion of a metal film which can be plated with a plating solution containing copper and has barrier properties to copper, and is subjected to a plating treatment on the inner surface thereof. Electroplating treatment method and memory medium.

Generally, wiring for forming a circuit is formed on a substrate such as a semiconductor wafer or a liquid crystal substrate for forming a semiconductor device. As a method of forming the wiring, a recess such as a through hole or a trench for embedding a wiring material such as copper is formed in the insulating layer of the substrate, and a damascene method or the like in which a wiring material is buried in the recess is used.

Between the inner surface of the concave portion of the insulating layer and the wiring formed in the concave portion, generally, a barrier film for preventing diffusion of atoms constituting the wiring material into the insulating layer or improving adhesion is provided. As the barrier film, a barrier film containing ruthenium such as a Ta film or a TaN film, or a barrier film containing titanium such as a Ti film or a TiN film is known. Further, between the barrier film and the wiring, a seed film for facilitating the embedding of the wiring material is generally provided.

For example, in Patent Document 1, it is proposed to borrow a barrier film containing ruthenium. The inner surface of the concave portion is formed by sputtering, and then the seed crystal film containing bismuth and copper is formed on the barrier film by sputtering, and then the copper is buried in the concave portion by a plating treatment.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-177538

In recent years, since the wiring is required to be more fine, the diameter of the concave portion for embedding the wiring material is reduced. Therefore, the aspect ratio of the concave portion becomes larger than before. In addition, with the miniaturization of wiring, the wiring structure is becoming more and more complicated. For example, in the wiring formed in the concave portion, the width of the wiring to be used differs depending on the position in the depth direction of the concave portion. For example, a wiring having a wider width than the lower portion of the upper portion or the like is used.

However, the sputtering method generally used for forming a seed crystal film is a method having high directivity. Therefore, when the aspect ratio of the concave portion is large or the concave portion structure is complicated, it is difficult to sufficiently form the seed crystal film to the lower portion of the concave portion.

An object of the present invention is to provide a plating processing apparatus, a plating processing method, and a memory medium which can effectively solve such problems.

The present invention is a plating treatment apparatus which is formed in a concave portion of an insulating layer and is provided with a concave portion of a metal film which can be plated with a plating solution containing copper and has barrier properties to copper, and is subjected to a plating treatment. The cleaning liquid discharge mechanism that discharges the cleaning liquid to the substrate including the insulating layer on which the concave portion is formed, the cleaning liquid discharge mechanism that discharges the cleaning liquid toward the substrate, and the cleaning liquid that supplies the cleaning liquid to the cleaning liquid discharge mechanism a supply mechanism and a plating solution discharge mechanism for discharging the plating solution toward the substrate; and the cleaning liquid supply mechanism configured to supply the cleaning liquid to be deoxidized to the cleaning liquid discharge mechanism.

The present invention relates to a concave portion formed in an insulating layer, and a plating portion of a concave portion of a metal film which can be plated with a plating solution containing copper and which has barrier properties to copper is provided on the inner surface thereof, and a plating treatment method for performing plating treatment is described. In the step of preparing a substrate including the insulating layer on which the concave portion is formed, a cleaning liquid discharge step of discharging the cleaning liquid toward the substrate, and a cleaning liquid for discharging the cleaning liquid toward the substrate after the cleaning liquid discharge step In the discharge step, after the cleaning liquid discharge step, a plating solution discharge step of discharging the plating solution onto the substrate; and in the cleaning liquid discharge step, the deoxidized cleaning liquid is discharged toward the substrate.

In the present invention, a recess for forming a concave portion formed on an insulating layer and having a concave portion for plating a copper-containing plating solution and having a barrier property to copper is provided on the inner surface thereof, and plating is performed. Processing device, a memory medium for a computer program for performing a plating process, The plating treatment method includes a step of preparing a substrate including the insulating layer on which the concave portion is formed, and a cleaning liquid discharging step of discharging the cleaning liquid toward the substrate, and discharging the liquid toward the substrate after the cleaning liquid discharging step The cleaning liquid discharge step of the cleaning liquid, after the cleaning liquid discharge step, the plating liquid discharge step of discharging the plating solution onto the substrate; and in the cleaning liquid discharge step, the deoxidized cleaning liquid is discharged toward the substrate.

According to the present invention, a seed film or wiring is formed on the barrier film by discharging a plating solution from a concave portion of a metal film which can be plated with a plating solution containing copper and having barrier properties to copper. Therefore, the seed film or the wiring can be sufficiently formed up to the lower portion of the concave portion as compared with the case where the seed film is formed on the barrier film by the sputtering method. Further, according to the present invention, the cleaning liquid which is subjected to deoxidation treatment is discharged toward a metal film which can be plated with a plating solution containing copper and which has barrier properties to copper. Therefore, it is possible to suppress the occurrence of oxidation of the barrier film between the cleaning liquid discharge steps, whereby a wiring pattern having high quality can be obtained.

2‧‧‧Substrate

11‧‧‧Insulation

12‧‧‧ recess

13‧‧‧Baffle film

20‧‧‧Electroplating treatment unit

30‧‧‧ Electroplating solution discharge mechanism

44‧‧‧Clean liquid discharge mechanism

45‧‧‧Clean liquid discharge mechanism

74‧‧‧cleaning liquid supply mechanism

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a side elevational view showing a plating apparatus according to an embodiment of the present invention.

Figure 2 (a) (b) is the plane of the plating processing apparatus shown in Figure 1. Figure.

Fig. 3 is a view showing a plating solution supply mechanism according to an embodiment of the present invention.

Fig. 4 is a view showing a cleaning liquid supply mechanism and a cleaning liquid supply mechanism according to an embodiment of the present invention.

Fig. 5A shows a step of preparing a substrate including an insulating layer in which a concave portion is formed.

Fig. 5B shows the step of forming a barrier film.

Fig. 5C shows the step of washing the barrier film.

Fig. 5D shows the step of forming a seed crystal film.

Fig. 5E shows a step of embedding a wiring material in a recess.

Fig. 5F shows the step of removing the wiring material located above the upper surface of the insulating layer.

Fig. 6A is a view showing a washing liquid discharge step of discharging the washing liquid toward the substrate.

Fig. 6B (a) and (b) are views showing a washing liquid discharge step of discharging the cleaning liquid toward the substrate.

Fig. 6C is a view showing a plating liquid discharge step of discharging a plating solution toward a substrate.

Fig. 7 is a side view showing a modification of the plating treatment apparatus.

Hereinafter, an embodiment of the present invention will be described with reference to Figs. 1 to 6C. First, the plating processing apparatus 20 will be described with reference to FIGS. 1 and 2 . The whole composition. 1 is a side view showing the plating processing apparatus 20, and FIG. 2 is a plan view showing the plating processing apparatus 20.

Plating treatment device

As shown in FIG. 1 , the plating processing apparatus 20 includes a substrate holding mechanism 110 that holds the substrate 2 and rotates inside the casing 101 , and a plating liquid discharge mechanism that discharges the plating liquid toward the substrate 2 held by the substrate holding mechanism 110 . 30. The plating solution supply mechanism 71 that is connected to the plating solution discharge mechanism 30 and supplies the plating solution to the plating solution discharge mechanism 30. In addition, the plating processing apparatus 20 includes a cleaning liquid discharge mechanism 44 that discharges the cleaning liquid toward the substrate 2, a cleaning liquid discharge mechanism 45 that discharges the cleaning liquid toward the substrate 2, and an inert gas discharge that supplies an inert gas toward the periphery of the substrate 2. Agency 46. In addition, the cleaning liquid discharge mechanism 44 is connected to the cleaning liquid supply mechanism 73 that supplies the cleaning liquid to the cleaning liquid discharge mechanism 44. Further, the cleaning liquid discharge mechanism 45 is connected to the cleaning liquid supply mechanism 74 that supplies the cleaning liquid to the cleaning liquid discharge mechanism 45, and the inert gas discharge mechanism 46 is connected to the inert gas supply mechanism 46. Gas supply mechanism 75. Further, in the present embodiment, the inert gas discharge mechanism 46 is configured such that an inert gas is discharged toward the substrate 2, whereby the atmosphere around the substrate 2 is replaced with an inert gas.

Inside the casing 101, a gas introduction portion 50 for supplying a gas such as N ₂ gas (nitrogen gas) or clean air by an FFU (Fan Filter Unit) 51 is provided. The gas in the gas introduction portion 50 is sent toward the substrate 2 through the rectifying plate 52 to flow downward.

The liquid holding cup 120 having the first opening 121 and the second opening 126, which is a liquid such as a plating solution, a cleaning liquid or a cleaning liquid, which is scattered by the substrate 2, is disposed around the substrate holding mechanism 110, and has a suction gas. The exhaust cup 105 of the opening portion 106. The liquid received by the first opening 121 and the second opening 126 of the drain cup 120 is discharged by the first drain mechanism 122 and the second drain mechanism 127. The gas that is sucked into the opening 106 of the exhaust cup 105 is discharged by the exhaust mechanism 107. Further, the drain cup 120 is connected to the lift 164, and the lift mechanism 164 can move the drain cup 120 up and down. Therefore, by allowing the liquid discharge cup 120 to move up and down in response to the type of the liquid scattered by the substrate 2, the path in which the liquid is discharged can be changed in accordance with the type of the liquid.

(substrate holding mechanism)

As shown in FIG. 2, the substrate holding mechanism 110 has a hollow cylindrical rotating shaft member 111 extending vertically in the casing 101, and is attached to the turntable 112 of the upper end portion of the rotating shaft member 111, and is provided on the turntable 112. The upper peripheral portion has a wafer chuck 113 that supports the substrate 2, and a rotating mechanism 162 that is coupled to the rotating shaft member 111 to rotationally drive the rotating shaft member 111.

The rotation mechanism 162 is controlled by the control unit 160 to rotationally drive the rotary shaft member 111, thereby rotating the substrate 2 supported by the wafer chuck 113. In this case, the control mechanism 160 can rotate the rotating shaft member 111 and the wafer chuck 113 or stop it by controlling the rotating mechanism 162. Further, the control mechanism 160 can increase or decrease the rotational speed of the rotating shaft member 111 and the wafer chuck 113, or Control is maintained in a manner that maintains a certain value.

(plating solution discharge mechanism)

Next, the plating solution discharge mechanism 30 will be described. The plating solution discharge mechanism 30 has a discharge nozzle 34 that discharges the plating solution toward the substrate 2, and a discharge head 33 that is provided with the discharge nozzle 34. In the discharge head 33, a pipe for guiding the plating liquid supplied from the plating solution supply mechanism 71 to the discharge nozzle 34, or a pipe for circulating the heat medium for holding the plating solution is accommodated.

The discharge head 33 is configured to be movable in the vertical direction and the horizontal direction. For example, the discharge head 33 is attached to the tip end portion of the arm 32, and the arm 32 can be fixed to the support shaft 31 that is rotationally driven by the rotation mechanism 165 while extending in the vertical direction. By using such a drive mechanism 165 and the support shaft 31, as shown in FIG. 2(a), the discharge head 33 can be moved to a discharge position at the position where the plating solution is discharged toward the substrate 2, and when the plating solution is not discharged. Between the waiting positions of the place.

The discharge head 33 may extend in a length corresponding to the peripheral portion of the substrate 2 from the center portion of the substrate 2, that is, corresponding to the radius of the substrate 2, as shown in FIG. In this case, a plurality of discharge nozzles 34 for discharging the plating solution may be provided in the discharge head 33. In this case, the position discharge head 33 is determined so that the plurality of discharge nozzles 34 are arranged in the radial direction of the substrate 2 when the plating solution is discharged, so that the plating liquid can be simultaneously supplied over a wide area of the substrate 2.

(plating solution supply mechanism)

Next, a plating solution supply mechanism 71 for supplying a plating solution to the plating solution discharge mechanism 30 will be described with reference to FIG.

As shown in FIG. 3, the plating solution supply mechanism 71 has a liquid tank 71b for storing the plating solution 71c, and a supply pipe 71a for supplying the plating solution 71c of the liquid tank 71b to the plating liquid discharge mechanism 30. A valve 71d and a pump 71e for adjusting the flow rate of the plating solution 71c are attached to the supply pipe 71a. Further, the plating solution supply mechanism 71 may further include a deaeration means 71f for removing dissolved oxygen in the plating solution 71c. As shown in FIG. 3, the deaeration means 71f may be configured as a gas supply pipe for supplying an inert gas such as nitrogen gas to the plating solution 71c stored in the liquid tank 71b. Thereby, the inert gas can be dissolved in the plating solution 71c, whereby the oxygen that has been dissolved in the plating solution 71c can be discharged to the outside.

(washing liquid discharge mechanism)

Next, the cleaning liquid discharge mechanism 44 will be described. The cleaning liquid discharge mechanism 44 has a discharge nozzle 44a that discharges the cleaning liquid toward the substrate 2, and a discharge head 43 that is provided with the discharge nozzle 44a. The discharge head 43 is configured to be movable in the vertical direction and the horizontal direction. For example, similarly to the discharge head 33 of the plating solution discharge mechanism 30, the discharge head 43 of the cleaning liquid discharge mechanism 44 is attached to the tip end portion of the arm 42, and the arm 42 can be fixed to the vertical direction while being extended. A support shaft 41 that is rotationally driven by a rotating mechanism 166. In this case, as shown in FIG. 2(b), the discharge head 43 has a position corresponding to the central portion of the substrate 2 and a position corresponding to the peripheral portion of the substrate 2. The support shaft 41 is movable between the horizontal directions.

(cleaning liquid discharge mechanism)

As shown in FIG. 1, the cleaning liquid discharge mechanism 45 has a discharge nozzle 45a provided in the discharge head 43 and discharging the cleaning liquid toward the substrate 2. In the present embodiment, the cleaning liquid discharge mechanism 45 is configured to share the discharge head 43, the arm 42, the support shaft 41, and the like with the cleaning liquid discharge mechanism 44.

(inert gas discharge mechanism)

Further, as shown in FIG. 1, the inert gas discharge mechanism 46 has a discharge nozzle 46a provided in the discharge head 43 and discharging an inert gas toward the substrate 2. Similarly to the case of the cleaning liquid discharge mechanism 45, the inert gas discharge mechanism 46 is configured to share the discharge head 43, the arm 42, the support shaft 41, and the like with the cleaning liquid discharge mechanism 44.

(supply agency)

Next, supply mechanisms 73, 74, and 75 for supplying the cleaning liquid, the cleaning liquid, and the inert gas to the respective discharge mechanisms 44, 45, and 46 will be described with reference to Fig. 4 . First, the cleaning liquid supply mechanism 73 will be described.

As shown in FIG. 4, the cleaning liquid supply means 73 has a liquid tank 73b for storing the cleaning liquid 73c, and a supply pipe 73a for supplying the cleaning liquid 73c of the liquid tank 73b to the cleaning liquid discharge mechanism 44. A valve 73d and a pump 73e for adjusting the flow rate of the cleaning liquid 73c are attached to the supply pipe 73a. this Further, the cleaning liquid supply means 73 may further include a deaeration means 73f for removing dissolved oxygen in the cleaning liquid 73c. As shown in FIG. 4, the deaeration means 73f may be configured as a gas supply pipe for supplying an inert gas such as nitrogen gas to the cleaning liquid 73c stored in the liquid tank 73b. Thereby, the inert gas can be dissolved in the cleaning liquid 73c, whereby the oxygen that has been dissolved in the cleaning liquid 73c can be discharged to the outside.

Further, as shown in FIG. 4, the cleaning liquid supply mechanism 74 has a liquid tank 74b for storing the cleaning liquid 74c, and a supply pipe 74a for supplying the cleaning liquid 74c of the liquid tank 74b to the cleaning liquid discharge mechanism 45. A valve 74d and a pump 74e for adjusting the flow rate of the cleaning liquid 74c are attached to the supply pipe 74a. Further, the cleaning liquid supply mechanism 74 may further include a deaeration means 74f for removing dissolved oxygen in the cleaning liquid 74c. As shown in FIG. 4, the deaeration means 74f may be configured as a gas supply pipe for supplying an inert gas such as nitrogen gas to the cleaning liquid 74c stored in the liquid tank 74b. Thereby, the inert gas can be dissolved in the cleaning liquid 74c, whereby the oxygen that has been dissolved in the cleaning liquid 74c can be discharged to the outside.

Further, as shown in FIG. 4, the inert gas supply mechanism 75 has a supply pipe 75a for supplying an inert gas such as nitrogen gas to the inert gas discharge mechanism 46. A valve 75d for adjusting the flow rate of the inert gas is attached to the supply pipe 75a.

The plating processing apparatus 20 configured as described above performs various processes on the substrate 2 in accordance with various programs recorded on the memory medium 161 of the control unit 160 by the control unit 160. Here, the memory medium 161 accommodates various setting materials or plating places described later. Various programs such as programs. As the memory medium 161, a memory such as a computer-readable ROM or a RAM, or a conventional memory medium such as a hard disk, a CD-ROM, a DVD-ROM, or a disk-shaped memory medium such as a floppy disk can be used.

Wiring forming method

Next, the action and effect of the present embodiment will be described by the configuration. Here, a method of forming a wiring for forming a second wiring layer on a first wiring layer provided in advance will be described. Specifically, first, a method of forming a concave portion in which a barrier film is provided on the inner surface on the first wiring layer will be described. Next, a plating treatment method of forming a seed crystal film on the barrier film by the electroless plating method using the plating treatment apparatus 20 described above will be described. Next, a plating treatment method in which a wiring material is buried in a recess by electroless plating will be described.

First, the substrate 2 provided with the first wiring layer 10A formed in a specific pattern is prepared. Next, an insulating layer 11 is provided on the first wiring layer 10A. The material constituting the insulating layer 11 can be appropriately selected depending on the characteristics required for the semiconductor device. For example, a material having a low dielectric constant such as a SiOCH-based material in which SiO _{2 is} doped with hydrogen carbide is used.

Thereafter, as shown in FIG. 5A, a recess 12 for embedding the wiring material is formed on the insulating layer 11. As a method of forming the recess 12 in the insulating layer 11, for example, a metal hard mask layer (not shown) may be first formed on the insulating layer 11 in a specific pattern, and thereafter, the metal hard mask layer is used as a mask. A method of etching the insulating layer 11. Moreover, as shown in FIG. 5A, the recess 12 formed in the insulating layer 11 may be such that the insulating layer 11 is not penetrated. The groove formed by the method is a through hole formed to penetrate the insulating layer 11 and reach the first interconnect layer 10A.

Further, although not shown, copper may be provided between the first interconnect layer 10A and the insulating layer 11 of the second interconnect layer 10B formed thereon to prevent the wiring 15 constituting the first interconnect layer 10 from being formed. A shielding layer for diffusion to the insulating layer 11 of the second wiring layer 10B. The shielding layer is made of, for example, a SiC-based material.

Next, as shown in FIG. 5B, a barrier film 13 is provided on the inner surface 12a of the recess 12. As a material constituting the barrier film 13, a metal material which can be plated with a copper-containing plating solution and which has barrier properties to copper is used. Here, the term "electroplating with a copper-containing plating solution" means that the barrier film 13 is formed by performing a plating reaction with a copper-containing plating solution to form a copper-containing film on the barrier film 13. For example, when the plating reaction is a displacement plating reaction, the material constituting the barrier film 13 is made of a metal which is more expensive than copper, for example, a material containing ruthenium. For example, the barrier film 13 is composed of a Ta film or a TaN film. When the seed film 14 is formed of the ruthenium-containing material and the seed film 14 is formed on the barrier film 13, the seed film 14 made of copper can be formed on the barrier film 13 by displacement plating.

The method of providing the barrier film 13 on the inner surface 12a of the recess 12 is not particularly limited, and a conventional method can be used. For example, a physical vapor deposition method such as a sputtering method can be used. In this manner, the substrate 2 including the insulating layer 11 in which the concave portion 12 of the barrier film 13 containing the ruthenium is formed on the inner surface 12a can be prepared.

(seed film formation step)

Next, a plating treatment method in which the substrate 2 is subjected to an electroless plating treatment using the plating treatment apparatus 20 to form the seed film 14 on the barrier film 13 will be described. The plating processing apparatus 20 drives and controls the substrate 2 in accordance with a plating process program recorded on the memory medium 161.

However, when the barrier film 13 containing ruthenium is exposed to an oxygen-containing atmosphere such as the atmosphere, as shown in FIG. 5B, the surface of the barrier film 13 is oxidized to form an oxide film 13a (see, for example, Japanese Patent No. 3715975). . Therefore, the plating treatment apparatus 20 drives the control so that the oxide film 13a is removed first, and then the seed film 14 is formed on the barrier film 13, as will be described later.

[Preparation steps]

In the plating treatment apparatus 20, first, the liquid discharge cup 120 is lowered to a specific position, and then the substrate 2 is carried into the plating processing apparatus 20. Next, the substrate 2 carried in is held by the wafer chuck 113 of the substrate holding mechanism 110.

[washing liquid discharge step]

Then, as shown in FIG. 6A, a washing liquid discharge step of discharging the cleaning liquid 73c by the cleaning liquid discharge mechanism 44 toward the substrate 2 is performed. First, the discharge head 43 of the cleaning liquid discharge mechanism 44 is moved to a position corresponding to the center portion of the substrate 2, and secondly, the cleaning liquid discharge mechanism is directed toward the center of the substrate 2. The discharge nozzle 44a of 44 discharges the cleaning liquid 73c. Further, the substrate 2 is rotated by the substrate holding mechanism 110 at a specific rotation speed. As a result, as shown by an arrow a in FIG. 6A, the cleaning liquid 73c supplied to the center portion of the substrate 2 flows toward the peripheral portion of the substrate 2 by the centrifugal force caused by the rotation of the substrate 2. Thereby, the cleaning liquid 73c can be traversed over the entire area of the surface of the substrate 2.

As the cleaning liquid 73c, a chemical solution capable of dissolving the oxide film 13a is used, and for example, dilute hydrofluoric acid (DHF) is used. For example, DHF having a ratio of hydrofluoric acid (HF) to DIW (distilled water) of 1:9 can be used. Thereby, as shown in FIG. 5C, the oxide film 13a formed on the surface of the barrier film 13 can be removed. The conditions such as the time or temperature at which this step is carried out can be appropriately set in accordance with the size of the substrate 2, etc., for example, a washing liquid discharge step of about 5 minutes at room temperature.

Preferably, the cleaning liquid 73c such as dilute hydrofluoric acid which has been deoxidized by the deaeration means 73f of the cleaning liquid supply means 73 is supplied to the cleaning liquid discharge means 44, and is discharged from the discharge nozzle 44a toward the substrate 2. . Therefore, the concentration of oxygen contained in the cleaning liquid 73c can be lowered as compared with the case where the cleaning liquid which is not subjected to the deoxidation treatment is used, whereby the surface of the barrier film 13 can be suppressed from being oxidized again. The degree of deoxidation treatment by the deaeration means 73f is not particularly limited. For example, the deoxidation treatment is performed so that the oxygen concentration of the cleaning liquid 73c discharged toward the substrate 2 is 1 ppm or less (preferably 0.5 ppm or less).

Further, preferably, the substrate holding mechanism 110 is covered with the cleaning liquid 73c discharged from the cleaning liquid discharge mechanism 44 as shown in FIG. 6A. The rotation speed of the substrate 2 is set to a low rotation speed so as to cover the surface of the substrate 2. For example, when the diameter of the substrate 2 is 300 mm, the number of revolutions of the substrate 2 is in the range of 1 to 500 rpm, for example, 100 rpm. Thereby, the thickness of the cleaning liquid 73c present on the substrate 2 can be made large, whereby the surface of the substrate 2 can be prevented from being exposed to the surrounding atmosphere when the cleaning liquid discharge step is performed. Further, since the surface state of the cleaning liquid 73c existing on the substrate 2 is disordered, the contact area between the cleaning liquid 73c and the surrounding atmosphere is increased, and as a result, it is possible to suppress the dissolution of oxygen in the surrounding atmosphere into the cleaning liquid 73c. Thereby, it is possible to suppress the surface of the barrier film 13 from being oxidized again.

In addition, when the cleaning liquid discharge mechanism 44 discharges the cleaning liquid 73c toward the substrate 2, the inert gas discharge mechanism 46 is controlled to discharge the inert gas toward the substrate 2. Thereby, the atmosphere around the substrate 2 can be replaced by an inert gas. That is, the oxygen concentration in the surrounding atmosphere of the substrate 2 can be reduced. Thereby, it is possible to further suppress the surface of the barrier film 13 from being oxidized again.

[cleaning liquid discharge step]

Next, as shown in (a) and (b) of FIG. 6B, a cleaning liquid discharge step of discharging the cleaning liquid 74c by the cleaning liquid discharge mechanism 45 toward the substrate 2 is performed. First, as shown in FIG. 6B(a), the discharge head 43 is moved to a position corresponding to the center portion of the substrate 2, and then, the cleaning liquid 74c is discharged from the discharge nozzle 45a of the cleaning liquid discharge mechanism 45 toward the center portion of the substrate 2. At this time, before the cleaning liquid 73c existing on the substrate 2 is thrown off and the surface of the substrate 2 is exposed, the discharge of the cleaning liquid 74c from the discharge nozzle 45a is started. In the manner, the cleaning liquid discharge mechanism 45 is controlled. Further, the substrate 2 is rotated by the substrate holding mechanism 110 at a specific rotation speed. At this time, as shown by an arrow b in FIG. 6B(b), the discharge head 43 provided with the discharge nozzle 45a is preferably moved in the horizontal direction from the center portion of the substrate 2 toward the peripheral edge portion of the substrate 2. Therefore, the cleaning liquid 73c on the substrate 2 can be quickly replaced with the cleaning liquid 74c as compared with the case where the cleaning liquid 74c reaches the peripheral edge portion of the substrate 2 by the centrifugal force caused by the rotation of the substrate 2. Further, by discharging the cleaning liquid 74c and simultaneously moving the discharge head 43, the cleaning liquid 74c discharged from the discharge nozzle 45a can directly reach the respective concave portions 12 of the substrate 2. Thereby, the cleaning liquid 73c can be sufficiently replaced with the cleaning liquid 74c in the lower portion of the concave portion 12.

As the cleaning liquid 74c, a liquid which can wash off the cleaning liquid 73c without oxidizing the surface of the barrier film 13 is used, and for example, DIW or ultrapure water is used. Further, the cleaning liquid discharge mechanism 45 supplies the cleaning liquid 74c which is subjected to the deoxidation treatment by the deaeration means 74f of the cleaning liquid supply means 74. Therefore, the concentration of oxygen contained in the cleaning liquid 74c can be lowered as compared with the case where the cleaning liquid which is not subjected to the deoxidation treatment is used, whereby the surface of the barrier film 13 can be suppressed from being oxidized again. The degree of deoxidation treatment by the deaeration means 74f is not particularly limited. For example, the deoxidation treatment is performed so that the oxygen concentration of the cleaning liquid 74c discharged toward the substrate 2 is 1 ppm or less (preferably 0.5 ppm or less).

The conditions such as the time or temperature at which this step is carried out can be appropriately set depending on the size of the substrate 2, etc., for example, a cleaning liquid discharge step of about 10 seconds at room temperature. So by setting the time to be very short, In order to suppress the barrier film 13 from being oxidized again.

When the cleaning liquid discharge mechanism 45 discharges the cleaning liquid 74c toward the substrate 2, the inert gas discharge mechanism 46 is controlled to discharge the inert gas toward the substrate 2, as in the case of the above-described cleaning liquid discharge step. Thereby, the atmosphere around the substrate 2 can be replaced by an inert gas, whereby the surface of the barrier film 13 can be further suppressed from being oxidized again.

Further, in this step, similarly to the case of the above-described cleaning liquid discharge step, the number of rotations of the substrate 2 may be set to a low rotation speed to the extent that the surface of the substrate 2 is covered by the cleaning liquid 74c.

[Electroplating solution discharge step]

Next, as shown in FIG. 6C, a plating liquid discharge step of discharging the plating solution 71c from the plating solution discharge mechanism 30 toward the substrate 2 is performed. First, as shown in FIG. 6C, the discharge heads 33 are moved so that the plurality of discharge nozzles 34 are arranged along the radial direction of the substrate 2, and the plating solution 71c is discharged from the discharge nozzles 34 toward the substrate 2. Thereby, the plating solution 71c can be simultaneously supplied over a wide area of the substrate 2, whereby the cleaning liquid 74c on the substrate 2 can be quickly replaced with the plating solution 71c. Further, the plating solution 71c can be sufficiently spread over the lower portion of each of the concave portions 12. At this time, the plating liquid discharge mechanism 30 is controlled so that the discharge of the plating liquid 71c from the discharge nozzle 34 is started before the cleaning liquid 74c existing on the substrate 2 is removed and the surface of the substrate 2 is exposed.

As the plating solution 71c, it is preferred to use a copper-containing plating solution Alternatively, the plating solution of the seed film 14 can be formed on the barrier film 13 by displacement plating. Thereby, as shown in FIG. 5D, the seed film 14 can be sufficiently formed to the lower portion of the concave portion 12. Further, as described above, the surface of the barrier film 13 is suppressed from being oxidized again in the cleaning liquid discharge step or the cleaning liquid discharge step. Therefore, the replacement plating is prevented from being hindered by the oxide film, whereby the seed film 14 can be formed over the barrier film 13.

The plating solution 71c which has been deoxidized by the deaeration means 71f of the plating solution supply means 71 is supplied to the plating solution discharge means 30, and is discharged from the discharge nozzles 34 toward the substrate 2. Therefore, the concentration of oxygen contained in the plating solution 71c can be lowered as compared with the case where the plating solution not subjected to the deoxidation treatment is used, whereby the surface of the barrier film 13 can be suppressed from being oxidized again. The degree of deoxidation treatment by the deaeration means 71f is not particularly limited. For example, the deoxidation treatment is performed so that the oxygen concentration of the plating solution 71c discharged toward the substrate 2 is 1 ppm or less (preferably 0.5 ppm or less).

Further, it is preferable that the plating liquid discharge mechanism 30 starts to discharge the plating solution 71c toward the substrate 2, and the inert gas discharge mechanism 46 discharges the inert gas toward the substrate 2 while the cleaning liquid 74c on the substrate 2 is replaced with the plating solution 71c. The way the gas is controlled. Thereby, the surface of the substrate 2 can be further suppressed from being oxidized again by the period covered by the plating solution 71c.

Further, after the surface of the substrate 2 is covered with the plating solution 71c, the discharge of the inert gas from the inert gas discharge mechanism 46 toward the substrate 2 can be stopped. Thereby, the flow of the gas around the substrate 2 can be reduced. move. Thereby, it is possible to prevent the heat of the plating solution 71c accumulated on the substrate 2 or the substrate 2 from escaping outward. Therefore, the temperature drop of the plating solution 71c discharged to the substrate 2 can be suppressed, whereby the formation of the seed film 14 can be promoted. In addition, the amount of inert gas used can be reduced, thereby reducing the cost of the plating process.

[post steps]

Thereafter, the post-cleaning liquid discharge step of discharging the cleaning liquid toward the substrate 2, the cleaning liquid discharge step of discharging the cleaning liquid toward the substrate 2, the IPA discharging step of discharging the IPA toward the substrate 2, and the discharging of the dry air toward the substrate 2 are performed. The air is discharged step and other steps. Thereafter, the substrate 2 on which the seed film 14 is formed is carried out by the plating processing apparatus 20. When these steps are performed, an inert gas, clean air, or the like may be sent toward the substrate 2.

(Wiring material embedding step)

Next, a plating treatment method in which the substrate 2 is subjected to an electroless plating treatment to embed the wiring material in the recess 12 will be described.

[Electroplating solution supply step]

First, the substrate 2 is carried into a device for performing electroless plating treatment. The apparatus uses, for example, the same plating treatment apparatus as the above-described plating processing apparatus 20.

Next, the cleaning step or the cleaning processing step of the substrate 2 is performed as necessary, and thereafter, the plating solution is supplied into the concave portion 12 of the substrate 2. As the plating solution, a plating material containing a conductive material such as copper for constituting a wiring material, and a specific reducing agent or the like is used. Thereby, as shown in FIG. 5E, the wiring material 15a can be buried in the recessed portion 12.

Moreover, in this step, not only the wiring member 15a but also the upper surface of the insulating layer 11 in the recessed part 12 is provided. Here, in this step, an electroless plating method is used as a plating treatment method. Therefore, the thickness of the wiring material 15a formed on the upper surface of the insulating layer 11 can be made smaller than in the case of using the electrolytic plating method.

[Chemical Mechanical Grinding Step]

Thereafter, the wiring material 15a provided on the upper surface of the insulating layer 11 is removed by chemical mechanical polishing. In this way, as shown in FIG. 5F, the second wiring layer 10B including the wiring 15 provided in the recess 12 can be formed on the first wiring layer 10A.

However, as described above, since the wiring material 15a is buried in the recess 12 by the electroless plating method, the thickness of the wiring material 15a to be formed provided on the upper surface of the insulating layer 11 becomes small. Therefore, the time required for the chemical mechanical polishing step can be shortened compared to the case where the electrolytic plating method is used. Further, the amount of the wiring material 15a that is wasted and removed can be reduced.

As described above, according to the present embodiment, the seed film 14 is formed on the barrier film 13 provided on the inner surface of the concave portion 12 by electroless plating. Further, the barrier film 13 contains a metal which can be plated with a plating solution containing copper and has barrier properties to copper, for example, germanium. Therefore, the seed film 14 can be formed by displacement plating on the barrier film 13. By sputtering When the seed film 14 is formed on the barrier film 13, the seed film 14 can be sufficiently formed up to the lower portion of the concave portion 12.

Further, according to the present embodiment, in the cleaning liquid discharge step, the cleaning liquid 74c subjected to the deoxidation treatment is discharged toward the barrier film 13. Therefore, it is possible to suppress oxidation of the barrier film 13 between the cleaning liquid discharge steps. Further, the above-described cleaning liquid discharge step, cleaning liquid discharge step, and plating liquid discharge step can be carried out in the same plating processing device 20. Therefore, before the cleaning liquid 73c existing on the substrate 2 is knocked off and the surface of the substrate 2 is exposed, the cleaning liquid 74c can be discharged toward the substrate 2. Further, before the cleaning liquid 74c existing on the substrate 2 is smashed and the surface of the substrate 2 is exposed, the plating solution 71c can be ejected toward the substrate 2. Thereby, the surface of the barrier film 13 after the oxide film 13a is removed is not oxidized again, and the seed film 14 can be completely formed on the barrier film 13.

Further, various modifications can be made to the above-described embodiment. Hereinafter, an example of the deformation will be described with reference to the drawings. In the following description, the same reference numerals are used for the same parts as those of the above-described embodiment, and the same reference numerals are used for the corresponding parts of the above-described embodiment, and the overlapping description will be omitted.

Modification of plating treatment device

As shown in FIG. 7, the plating processing apparatus 20 may further include the top plate 21 disposed above the substrate 2. The top plate 21 is configured to be movable in the vertical direction. For example, as shown in FIG. 7, the top plate 21 is mounted on One end of the support portion 25 and the other end of the support portion 25 are attached to the movable portion 24. The movable portion 24 is configured to be driven by a drive mechanism 167 along a support shaft 23 extending in the vertical direction. By using such a drive mechanism 167, the support shaft 23, the movable portion 24, and the support portion 25, the distance between the substrate 2 and the top plate 21 can be changed depending on the situation.

Further, as shown in FIG. 7, the top plate 21 may be formed with a discharge port 26 for discharging a cleaning liquid, a cleaning liquid, a plating solution, an inert gas or the like toward the substrate 2. Here, an example in which the discharge port 26 is configured to discharge an inert gas toward the substrate 2 will be described. As shown in FIG. 7, an inert gas supply mechanism 76 that supplies an inert gas to the discharge port 26 is connected to the discharge port 26.

By using such a top plate 21, it is possible to prevent the surrounding atmosphere of the substrate 2 from being diffused inside the plating processing apparatus 20. Therefore, it is possible to prevent various substances included in the atmosphere around the substrate 2 from adhering to the constituent elements of the plating processing apparatus 20, and thus generate fine particles.

In addition, the cleaning liquid discharge step, the cleaning liquid discharge step, the plating solution discharge step, and the like performed by the plating treatment apparatus 20 can also provide the following advantages by using the top plate 21.

For example, when the cleaning liquid discharge step or the cleaning liquid discharge step is performed, the substrate 2 may be covered with the top plate 21 from above. In this case, the gas around the substrate 2 can be sealed in a narrow space by the top plate 21. Therefore, when the inert gas is discharged toward the substrate 2, the atmosphere around the substrate 2 can be effectively replaced by the inert gas. In this case, the inert gas may be discharged toward the substrate 2 by using the discharge nozzle 46a provided in the discharge head 43, or the inert gas may be discharged toward the substrate 2 using the discharge port 26 provided in the top plate 21. Also. In other words, the discharge port 26 provided in the top plate 21 can function as an inert gas discharge mechanism that discharges an inert gas toward the substrate 2.

Further, in the plating solution discharge step, the substrate 2 may be covered from above by using the top plate 21. In this case, the gas around the substrate 2 may be sealed in a narrow space by the top plate 21. Therefore, it is possible to suppress the heat of the plating solution 71c accumulated on the substrate 2 or the substrate 2 from escaping, thereby promoting the formation of the seed film 14.

Modification of plating treatment method

In the above-described embodiment, the seed film 14 is formed on the barrier film 13 by using the plating treatment device 20, followed by the post-cleaning step and the like, and then the wiring material 15a is buried in the recess 12 by using another device. An example. However, not limited thereto, after the seed film 14 is formed on the barrier film 13, the step of embedding the wiring material 15a in the recess 12 may be performed in the same plating processing apparatus 20. That is, the step of forming the seed film 14 and the step of embedding the wiring material 15a in the recess 12 may be carried out in the same plating processing apparatus 20 as a series of electroless plating steps.

Other variants

Further, in the present embodiment, a deaeration means for removing oxygen contained in a liquid such as the cleaning liquid 73c, the cleaning liquid 74c, or the plating liquid 71c is shown, and the inert gas such as nitrogen gas is supplied to the liquid to be discharged. An example of a means of oxygen in a liquid. That is, the display is removed by a so-called bubble. An example of oxygen. However, the specific method of removing oxygen in the liquid is not particularly limited. For example, a method of removing oxygen in a liquid by cooling a liquid, or a method of removing oxygen in a liquid by a surrounding atmosphere of a reduced pressure liquid, or a method of combining cooling and decompression, etc., may also remove oxygen in a liquid. .

Further, the configurations of the plating solution discharge mechanism 30, the cleaning liquid discharge mechanism 44, the cleaning liquid discharge mechanism 45, and the inert gas discharge mechanism are not limited to the above examples.

For example, the plating liquid discharge mechanism 30 includes an example of the plurality of discharge nozzles 34 arranged along the radial direction of the substrate 2, but is not limited thereto. For example, although not shown, the plating solution discharge mechanism 30 may include a slit-shaped discharge port extending in the radial direction of the substrate 2 . In addition, the plating solution discharge mechanism 30 may be configured to discharge the plating solution 71c toward the center portion of the substrate 2, similarly to the cleaning liquid discharge mechanism 44. In addition, the discharge head 33 of the plating solution discharge mechanism 30 may be configured to be movable in the horizontal direction while discharging the plating solution 71c, similarly to the cleaning liquid discharge mechanism 45. Further, the top plate 21 may be provided with a discharge nozzle or a discharge port for discharging the plating solution toward the substrate 2.

Further, the discharge head 43 of the cleaning liquid discharge mechanism 45 is shown as being configured to be movable in the horizontal direction while discharging the cleaning liquid 74c, but is not limited thereto. For example, the cleaning liquid discharge mechanism 45 may be configured to discharge the cleaning liquid 74c toward the center of the substrate 2, similarly to the cleaning liquid discharge mechanism 44. In addition, a discharge nozzle that discharges the cleaning liquid 74c toward the center of the substrate 2 may be used in combination with a discharge nozzle that discharges the cleaning liquid 74c in the horizontal direction. In addition, at the top The plate 21 may be provided with a discharge nozzle or a discharge port that discharges the cleaning liquid toward the substrate 2. Similarly, the top plate 21 may be provided with a discharge nozzle or a discharge port for discharging the cleaning liquid toward the substrate 2.

Further, in the present embodiment, the inert gas discharge mechanism that supplies the inert gas to the periphery of the substrate 2 shows that the inert gas discharge mechanism 46 including the discharge nozzle 46a provided in the discharge head 43 is used or is provided on the top plate 21. An example of the inert gas discharge mechanism of the discharge port 26 is not limited thereto. For example, the gas introduction unit 50 that blows the gas from the FFU 51 and sends it toward the substrate 2 may function as an inert gas discharge mechanism that supplies an inert gas to the periphery of the substrate 2 . Further, the specific form of the inert gas discharge means is not limited to the form in which the inert gas is directly blown toward the substrate 2, for example, toward the surface of the substrate 2 on which the concave portion is formed. The inert gas discharge means may be configured such that at least the surface on which the concave portion is formed in the surface of the substrate 2 or the entire surface of the substrate 2 is in contact with the inert gas atmosphere, the cleaning liquid discharge step of the substrate 2 can be performed. .

Further, some modifications of the above-described embodiments have been described. Of course, a plurality of modifications can be applied as appropriate.

2‧‧‧Substrate

20‧‧‧Electroplating treatment unit

30‧‧‧ Electroplating solution discharge mechanism

31,41‧‧‧Support shaft

32‧‧‧ Arm

33‧‧‧ spit out

34‧‧‧ spout nozzle

42‧‧‧ Arm

43‧‧‧ spit out

44‧‧‧Clean liquid discharge mechanism

44a, 45a, 46a‧‧‧ spout nozzle

45‧‧‧Clean liquid discharge mechanism

46‧‧‧Inert gas discharge mechanism

50‧‧‧Gas introduction department

51‧‧‧FFU (Fan Filter Unit)

52‧‧‧Rectifier board

71‧‧‧ plating solution supply mechanism

73‧‧‧cleaning liquid supply mechanism

74‧‧‧cleaning liquid supply mechanism

75‧‧‧Inert gas supply mechanism

101‧‧‧shell

105‧‧‧Exhaust cup

106‧‧‧ openings

107‧‧‧Exhaust mechanism

110‧‧‧Substrate retention mechanism

111‧‧‧Rotary shaft components

112‧‧‧ Turntable

113‧‧‧ wafer chuck

120‧‧‧Draining cup

121‧‧‧1st opening

122‧‧‧1st draining mechanism

126‧‧‧2nd opening

127‧‧‧2nd drainage mechanism

160‧‧‧Control agency

161‧‧‧Memory Media

162‧‧‧Rotating mechanism

164‧‧‧ Lift purchase

165,166‧‧‧Rotating mechanism

Claims (14)

A plating treatment apparatus is provided with a concave portion formed on an insulating layer, and a concave portion of a metal film which can be plated with a plating solution containing copper and which has barrier properties to copper is provided on the inner surface thereof, and is subjected to plating treatment; The cleaning liquid discharge mechanism that discharges the cleaning liquid to the substrate including the insulating layer on which the concave portion is formed, the cleaning liquid discharge mechanism that discharges the cleaning liquid toward the substrate, and the cleaning liquid that supplies the cleaning liquid to the cleaning liquid discharge mechanism a supply mechanism and a plating solution discharge mechanism for discharging the plating solution toward the substrate; the cleaning liquid supply mechanism configured to supply the cleaning liquid to be deoxidized to the cleaning liquid discharge mechanism; and further comprising the substrate An inert gas discharge mechanism that supplies an inert gas around the inert gas discharge mechanism is integrally formed with the cleaning liquid discharge mechanism configured to be movable at least in the vertical direction or the horizontal direction, and is processed by at least the cleaning liquid discharge mechanism The aforementioned cleaning liquid discharge mechanism between the above and the treatment according to the plating solution discharge mechanism described above When the discharge control board cleaning liquid, inert gas is supplied to the periphery of the substrate. The plating apparatus according to claim 1, further comprising a top plate that is disposed above the substrate and configured to be movable in an up-and-down direction; the inert gas discharge mechanism and the cleaning liquid discharge mechanism have A discharge port for discharging an inert gas toward the substrate is provided on the top plate. The plating processing apparatus according to claim 1 or 2, further comprising: a substrate holding mechanism that holds the substrate to rotate at a specific number of rotations; and the substrate holding mechanism that discharges the cleaning liquid discharge mechanism toward the substrate In the case of cleaning the liquid, the number of rotations of the substrate is set such that the surface of the substrate is covered by the cleaning liquid. The plating treatment apparatus according to claim 1 or 2, further comprising: a cleaning liquid supply mechanism that supplies the cleaning liquid to the cleaning liquid discharge mechanism, wherein the cleaning liquid supply mechanism is capable of being deoxidized The cleaning liquid is supplied to the washing liquid discharge mechanism. The plating processing apparatus according to claim 1 or 2, wherein the cleaning liquid discharge mechanism has a discharge head provided with a discharge nozzle for discharging the cleaning liquid toward the substrate, and the discharge head of the cleaning liquid discharge mechanism is capable of discharging The cleaning liquid is simultaneously moved in the horizontal direction. The plating treatment apparatus according to claim 1 or 2, wherein the plating solution discharge mechanism includes a plurality of discharge nozzles arranged in a radial direction of the substrate, and discharges a plating solution toward the substrate, or includes a discharge port extending in the radial direction of the substrate. A plating treatment method for forming a concave portion formed on an insulating layer, and providing a concave portion of a metal film which can be plated with a plating solution containing copper and having barrier properties to copper on the inner surface thereof, and is subjected to a plating treatment; In the step of preparing a substrate including the insulating layer on which the concave portion is formed, a cleaning liquid discharge step of discharging the cleaning liquid toward the substrate, and a cleaning liquid for discharging the cleaning liquid toward the substrate after the cleaning liquid discharge step a discharge step of discharging a plating solution for the plating solution onto the substrate, and discharging the deoxidized cleaning liquid toward the substrate in the cleaning liquid discharging step; and in the cleaning liquid discharging step, in the cleaning liquid discharging step An inert gas discharge mechanism integrally formed with the cleaning liquid discharge mechanism configured to be movable at least in the vertical direction or the horizontal direction supplies an inert gas to the periphery of the substrate. The plating treatment method according to claim 7, wherein in the cleaning liquid discharge step, the cleaning liquid and the inert gas are provided in a top plate which is disposed above the substrate and which is configured to be movable in the vertical direction The outlet discharges an inert gas toward the substrate. The plating treatment method according to claim 7, wherein in the cleaning liquid discharge step, the ambient atmosphere of the substrate is an inert gas. The plating treatment method according to claim 7 or 8, wherein in the cleaning liquid discharge step, the substrate is rotated by covering the surface of the substrate with a cleaning liquid. The plating treatment method according to claim 7 or 8, wherein in the cleaning liquid discharge step, the deoxidized cleaning liquid is discharged toward the substrate. The plating treatment method according to claim 7 or 8, wherein in the cleaning liquid discharge step, the cleaning liquid is discharged toward the substrate by a discharge port that is moved in the horizontal discharge head. The plating treatment method according to claim 7 or 8, wherein the plating liquid discharge step is performed by a plurality of discharge nozzles which are arranged in a radial direction of the substrate, discharge a plating solution toward the substrate, or a radial direction along the substrate The extended discharge port discharges the plating solution toward the substrate. A memory medium is provided in which a concave portion formed on an insulating layer is housed, and a concave portion of a metal film which can be plated with a plating solution containing copper and has barrier properties to copper is provided on the inner surface thereof, and is plated. The electroplating processing apparatus is a computer program for performing a plating processing method, wherein the plating processing method includes: preparing a substrate including the insulating layer on which the concave portion is formed a cleaning liquid discharge step of discharging the cleaning liquid toward the substrate, a cleaning liquid discharge step of discharging the cleaning liquid toward the substrate after the cleaning liquid discharge step, and discharging the substrate after the cleaning liquid discharge step a liquid plating solution discharge step of discharging the deoxidized cleaning liquid toward the substrate in the cleaning liquid discharge step, and a cleaning liquid configured to move at least in the vertical direction or the horizontal direction during the cleaning liquid discharge step The inert gas discharge means integrally formed by the discharge mechanism supplies an inert gas to the periphery of the substrate.