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TWI518772B - Clean with copper wire using plasma or activated gas - Google Patents

Clean with copper wire using plasma or activated gas Download PDF

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Publication number
TWI518772B
TWI518772B TW099134598A TW99134598A TWI518772B TW I518772 B TWI518772 B TW I518772B TW 099134598 A TW099134598 A TW 099134598A TW 99134598 A TW99134598 A TW 99134598A TW I518772 B TWI518772 B TW I518772B
Authority
TW
Taiwan
Prior art keywords
tube
gas
wire
plasma
gas atmosphere
Prior art date
Application number
TW099134598A
Other languages
Chinese (zh)
Other versions
TW201130040A (en
Inventor
裴潘林
華納 瑞斯
Original Assignee
林德股份公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 林德股份公司 filed Critical 林德股份公司
Publication of TW201130040A publication Critical patent/TW201130040A/en
Application granted granted Critical
Publication of TWI518772B publication Critical patent/TWI518772B/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/24—Preliminary treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/67138—Apparatus for wiring semiconductor or solid state device
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Wire Bonding (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)

Description

利用電漿或活化之氣體於銅線清潔Clean with copper wire using plasma or activated gas

本發明係關於清潔用於電子裝置互連及封裝之線接合程序之接合線之方法及設備。The present invention relates to a method and apparatus for cleaning bond wires for wire bonding processes for electronic device interconnections and packages.

線接合法係藉由引線框架或基板上之外部引線在集成電路(晶片)或其他電子組件之末端之間形成互連之基本方法。另外線接合法可用於連接集成電路與其他電子裝置或其他集成電路，亦可將多引線框架、基板或印刷電路板連接在一起。線接合法提供具成本效益且有彈性之互連方法，且因此用於大多數電子裝置製造中。Wire bonding is the basic method of forming interconnections between the ends of an integrated circuit (wafer) or other electronic component by means of lead frames or external leads on the substrate. In addition, the wire bonding method can be used to connect integrated circuits with other electronic devices or other integrated circuits, and can also connect multi-lead frames, substrates or printed circuit boards together. Wire bonding provides a cost effective and flexible interconnect method and is therefore used in most electronic device manufacturing.

線接合法具有兩種主要類別：即球形焊接與楔形焊接，其中使用熱、壓力、或超聲能之組合將線兩端接附於電子組件以形成牢固之接合或焊接。用於線接合之線通常具有15 μm至幾百μm之直徑且最初主要由金、銀或鋁製成。然而，為節約成本，銅或銅合金之使用已增加。Wire bonding has two main categories: spherical soldering and wedge soldering, in which a combination of heat, pressure, or ultrasonic energy is used to attach the ends of the wire to an electronic component to form a strong bond or weld. The wire for wire bonding usually has a diameter of 15 μm to several hundred μm and is initially mainly made of gold, silver or aluminum. However, in order to save costs, the use of copper or copper alloys has increased.

然而，銅或銅合金之使用可導致嚴重問題，即銅會快速且輕易地被氧化。在線上所形成之氧化物污染物或層通常阻礙接合黏合性並增加接觸電阻。另外，由於該氧化物之存在，所要求之牢固接合可被損壞。其可能為封裝應力引起之焊心與氧化物污染物或層之分離的結果。因此，當在線接合法中使用銅或銅合金線時，該方法結果有時不穩定且不一致。當與接合器接附時，該線亦具有有限之貨架期及較短之使用壽命。However, the use of copper or copper alloys can cause serious problems in that copper is quickly and easily oxidized. Oxide contaminants or layers formed on the wire typically hinder bond adhesion and increase contact resistance. In addition, the required strong bond can be damaged due to the presence of the oxide. It may be the result of separation of the weld core from oxide contaminants or layers caused by the package stress. Therefore, when copper or copper alloy wires are used in the wire bonding method, the results of the method are sometimes unstable and inconsistent. The line also has a limited shelf life and a short service life when attached to the adapter.

因此相關技術對於用於線接合法中之接合線之清潔方法之改良仍存在要求。Therefore, there is still a demand for improvements in the cleaning method for the bonding wires used in the wire bonding method.

本發明提供用於清潔接合線上之氧化物及其他污染物之設備及方法，其中避免先前技術方法相關之缺點。特定而言，本發明提供一種作為線接合程序之部份之使用電漿、活化之氣體或還原氣體清潔接合線之設備及方法。The present invention provides apparatus and methods for cleaning oxides and other contaminants on bonding wires wherein the disadvantages associated with prior art methods are avoided. In particular, the present invention provides an apparatus and method for cleaning bond wires using plasma, activated gas or reducing gas as part of a wire bonding process.

本發明提供用於線接合程序中之清潔接合線之氧化物及其他污染物之經改良設備及方法。本發明提供在將該線用於線接合步驟之前使用電漿、活化之氣體或還原氣體清潔該接合器中之接合線之方法及設備。The present invention provides improved apparatus and methods for cleaning oxides and other contaminants in a bond wire in a wire bonding process. The present invention provides a method and apparatus for cleaning bond wires in a splicer using a plasma, activated gas or reducing gas prior to use of the wire for the wire bonding step.

參照圖1，將更詳細描述本發明。圖1係根據本發明之使用電漿、活化之氣體或還原氣體清潔接合線之設備之示意圖。特定而言，圖1顯示設備100，其具有穿過毛細管30將線股20提供至線接合程序40之線卷10。當該線儲存於該線卷中或以線股送料至該線接合程序時，其會被氧化並需要清潔以避免以上所述之關於接合之問題。Referring to Figure 1, the invention will be described in more detail. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic illustration of an apparatus for cleaning bond wires using plasma, activated gas or reducing gas in accordance with the present invention. In particular, FIG. 1 shows an apparatus 100 having a coil 10 that provides strands 20 through a capillary 30 to a wire bonding process 40. When the wire is stored in the coil or fed to the wire bonding process as a strand, it is oxidized and needs to be cleaned to avoid the problems described above with respect to bonding.

根據本發明，該線股20暴露於發揮清潔該線之氧化物作用之電漿、活化之氣體或還原氣體氛圍。為容納電漿或活化氣體氛圍，提供一該線穿過之管。如圖1所示，可沿該線股20之路徑(自該線卷10至該毛細管30)安裝管50A或50B。特定而言，該管可如圖1中管50A所示鄰近該線卷10設置，或該管可如圖1中管50B所示鄰近該毛細管30設置。或者，該管可位於沿該線股20之路徑之任何其他位置，或可提供多個管，例如，可同時使用管50A及50B。可以任何合適之材料製造用於容納該清潔氣體之管，例如玻璃、塑料、陶瓷、介電材料或其他抗電漿蝕刻之材料。In accordance with the present invention, the strands 20 are exposed to a plasma, activated gas or reducing gas atmosphere that acts to clean the oxides of the strand. To accommodate the plasma or activating gas atmosphere, a tube through which the wire passes is provided. As shown in Figure 1, the tube 50A or 50B can be mounted along the path of the strand 20 (from the coil 10 to the capillary 30). In particular, the tube can be disposed adjacent to the coil 10 as shown in tube 50A of FIG. 1, or the tube can be disposed adjacent to the capillary 30 as shown in tube 50B of FIG. Alternatively, the tube can be located at any other location along the path of the strand 20, or a plurality of tubes can be provided, for example, tubes 50A and 50B can be used simultaneously. Tubes for containing the cleaning gas may be fabricated from any suitable material, such as glass, plastic, ceramic, dielectric materials, or other materials resistant to plasma etching.

該電漿、活化之氣體或還原氣體可在該管外產生或活化並隨後被填充入該管，或其可作為氣體引入該管並隨後在該管內活化。特定而言，該氣體或電漿可在該管外藉由任何習知之生成方法生成，並隨後經由「T」或「Y」型連接件經該管之側面引至該管或引入該管之一端或兩端中。該氣體或電漿生成器可為任何習知類型或包括在kHz、MHz或GHz範圍內操作之生成器。此外，可使用微波型生成器。或者，可將氣體引入該管並隨後可生成電漿，或可在管內以任意習知之電漿生成技術(諸如障壁放電方法)活化該氣體。The plasma, activated gas or reducing gas may be produced or activated outside the tube and subsequently filled into the tube, or it may be introduced as a gas into the tube and subsequently activated within the tube. In particular, the gas or plasma may be generated outside the tube by any conventional method of formation and subsequently introduced to the tube via the side of the tube via a "T" or "Y" type connector or introduced into the tube. One or both ends. The gas or plasma generator can be of any conventional type or include a generator operating in the kHz, MHz or GHz range. In addition, a microwave type generator can be used. Alternatively, a gas may be introduced into the tube and subsequently plasma may be generated, or the gas may be activated within the tube by any conventional plasma generation technique, such as a barrier discharge method.

用作電漿之氣體可為氫氣、氬氣、氮氣、氧氣或其一或多者之混合物。根據本發明之某些特別有用之氣體混合物係含有至高達百分之十之氫氣之氬氣及含有高達百分之十之氫氣之氮氣。該電漿可在室溫下引入或可被加熱至自室溫至900℃之溫度。在該管內之該氣體之壓力應在1巴(barg)以下。較佳地，該電漿氣體以小於2 Sm/hr之流速流經該管。The gas used as the plasma may be hydrogen, argon, nitrogen, oxygen or a mixture of one or more thereof. Some particularly useful gas mixtures in accordance with the present invention are argon containing up to ten percent hydrogen and nitrogen containing up to ten percent hydrogen. The plasma can be introduced at room temperature or can be heated to a temperature from room temperature to 900 °C. The pressure of the gas within the tube should be below 1 bar. Preferably, the plasma gas flows through the tube at a flow rate of less than 2 Sm/hr.

本發明之設備及方法提供多種優勢。特定而言，可輕易地且安全地在線接合前自該線移除氧化物及其他污染物。此允許使用先前受污染之線、過度老化之線及可能已儲存於錯誤條件下之線。藉由使用本發明之設備及方法，可消除對於控制線材料之車間壽命(floor life)之需求。另外，藉由使用已經由本發明之設備及方法清潔之線，所得之接合更可靠及一致，其形成更高之接合品質、更大之製程窗口、該接合之更小之接觸電阻及更佳之可靠性特性。The apparatus and method of the present invention provide a number of advantages. In particular, oxides and other contaminants can be removed from the line before and after the wire bonding can be easily and safely performed. This allows the use of previously contaminated lines, lines of excessive aging, and lines that may have been stored under error conditions. By using the apparatus and method of the present invention, the need for floor life of control line materials can be eliminated. In addition, by using wires that have been cleaned by the apparatus and method of the present invention, the resulting joints are more reliable and consistent, resulting in higher joint quality, greater process window, smaller contact resistance of the bond, and better reliability. Sexual characteristics.

已進行本發明之設備及方法之測試，產生以下所示之結果。實行之該等測試使用兩種不同之電漿源，即VarigonTM氣體(具有5%氫氣之氬氣，自Linde AG購得)與成形氣體(具有5%氫氣之氮氣)。另外，測試兩種不同操作方式。測試組1-4使用由具有兩個互相分離之外部電極之玻璃毛細管所組成並具有15 kHz電源之DBE電漿源。藉由T型管在該玻璃毛細管之上端注入該電漿之氣體。該玻璃毛細管之另一端具有減小之直徑。測試組5-7使用CPM電漿源，其由以下組成：具備網狀外部電極之玻璃毛細管及與欲在低電勢下清潔之線接觸之內部金屬毛細管、及1 MHz之電源。在該兩毛細管之間注入該電漿之氣體。Testing of the apparatus and method of the present invention has been carried out to produce the results shown below. The implementation of these two kinds of tests using different plasma source, i.e. Varigon TM gas (5% hydrogen with the argon gas, available from Linde AG) and forming gas (nitrogen with 5% of hydrogen). In addition, two different modes of operation were tested. Test sets 1-4 used a DBE plasma source consisting of a glass capillary with two separate external electrodes and having a 15 kHz power supply. The plasma gas is injected into the upper end of the glass capillary by a T-tube. The other end of the glass capillary has a reduced diameter. Test sets 5-7 used a CPM plasma source consisting of a glass capillary with a meshed external electrode and an internal metal capillary in contact with the wire to be cleaned at low potential, and a 1 MHz power supply. A gas of the plasma is injected between the two capillaries.

測試組1：將Varigon氣體以8 slm注入其中一電極設定為高電壓且第二電極設定為低電壓之毛細管。該電漿擊發且該接合程序正常進行。Test group 1: The Varigon gas was injected at 8 slm into a capillary in which one of the electrodes was set to a high voltage and the second electrode was set to a low voltage. The plasma is fired and the bonding process proceeds normally.

測試組2：將Varigon氣體以8 slm注入兩電極均為高電壓且對欲清潔之線施加低電壓之毛細管。該接合程序受影響且需要進一步最優化。Test group 2: The Varigon gas was injected at 8 slm into a capillary tube in which both electrodes were high voltage and a low voltage was applied to the wire to be cleaned. This bonding procedure is affected and needs further optimization.

測試組3：將成形氣體以1 slm注入兩電極均為高電壓且對欲清潔之線施加低電壓之毛細管。該電漿擊發，但該接合程序受影響且需要進一步最優化。Test group 3: The forming gas was injected at 1 slm into a capillary tube in which both electrodes were high voltage and a low voltage was applied to the wire to be cleaned. The plasma is fired, but the bonding procedure is affected and further optimization is required.

測試組4：將成形氣體以1 slm注入其中一電極設定為高電壓且第二電極設定為低電壓之毛細管。該電漿擊發且該接合程序正常進行。Test group 4: The forming gas was injected at 1 slm into a capillary in which one of the electrodes was set to a high voltage and the second electrode was set to a low voltage. The plasma is fired and the bonding process proceeds normally.

測試組5：將Varigon氣體以5 slm隨著至該電源之冷卻氣體注入該等毛細管之間。將該網狀電極設定為高電勢並將該金屬毛細管及線設定為低電勢。該電漿擊發且該接合程序正常進行。Test Group 5: The Varigon gas was injected between the capillaries with a cooling gas to the power source at 5 slm. The mesh electrode is set to a high potential and the metal capillary and line are set to a low potential. The plasma is fired and the bonding process proceeds normally.

測試組6：不使用內部毛細管。將Varigon氣體以5 slm注射通過該網狀電極設定為高電勢且該線設定為低電勢之玻璃毛細管。該電漿擊發且該接合程序正常進行。Test set 6: No internal capillary is used. The Varigon gas was injected at 5 slm through the mesh electrode to a high potential and the line was set to a low potential glass capillary. The plasma is fired and the bonding process proceeds normally.

測試組7：不使用內部毛細管。將成形氣體以5 slm注射通過該網狀電極設定為高電勢且該線設定為低電勢線之玻璃毛細管。該電漿擊發且該接合程序正常進行。Test set 7: No internal capillary is used. The forming gas was injected at 5 slm through the mesh electrode to a high potential and the line was set to a glass capillary of a low potential line. The plasma is fired and the bonding process proceeds normally.

以上該等測試顯示：可將該電漿源置於該接合頭上且該電操作模式不影響接合機運行。另外，該接合線不受該等毛細管及電漿之損害且該接合程序可在電漿擊發時運行。兩種電漿源DBE及CPM均可以Varigon氣體或成形氣體操作。The above tests show that the plasma source can be placed on the bond head and the electrical mode of operation does not affect the operation of the bonder. Additionally, the bond wires are not damaged by the capillary and plasma and the bonding process can be run while the plasma is firing. Both plasma sources DBE and CPM can be operated with Varigon gas or forming gas.

圖2及3清楚顯示本發明之清潔優勢。特定而言，圖2顯示未經本發明處理過之接合線且清楚顯示該沿著線表面呈黑點出現之嚴重氧化物污染物。圖3顯示根據本發明電漿處理後之接合線，其中氧化物已被清除且該線之表面非常乾淨。Figures 2 and 3 clearly show the cleaning advantages of the present invention. In particular, Figure 2 shows the bond wires that have not been treated in accordance with the present invention and clearly show that the oxide oxides appear as black spots along the surface of the wire. Figure 3 shows a bond wire after plasma treatment in accordance with the present invention in which the oxide has been removed and the surface of the wire is very clean.

如以上所述，本發明提供多種優勢，包含在線接合前簡便及安全地移除線之氧化物、形成更可靠及一致之線接合。另外，幾乎任何線(包含已被污染的、過度老化及儲存於錯誤條件下之線)均可藉由本發明之該等方法處理並隨後用於線接合程序。As described above, the present invention provides a number of advantages, including the easy and safe removal of oxides of the wire prior to wire bonding, resulting in a more reliable and consistent wire bond. In addition, almost any line (including lines that have been contaminated, overaged, and stored under erroneous conditions) can be processed by the methods of the present invention and subsequently used in wire bonding procedures.

應瞭解本文所述之該等實施例僅為示例且熟悉此項技術者可在不脫離本發明之精神及範圍之情況下進行改變與修改。所有該等改變及修改意欲包含於以上描述之本發明之範圍內。另外，因為可組合本發明之各種實施例以提供所要求之結果，所揭示之所有實施例不一定為替代方案。It is to be understood that the embodiments described herein are by way of example only, and that modifications and modifications may be made without departing from the spirit and scope of the invention. All such changes and modifications are intended to be included within the scope of the invention described above. In addition, all of the disclosed embodiments are not necessarily an alternative, as various embodiments of the invention can be combined to provide the desired results.

10．．．線卷10. . . Line roll

20．．．線股20. . . Line stock

30．．．毛細管30. . . Capillary

40．．．線接合法40. . . Wire bonding

50A．．．管50A. . . tube

50B．．．管50B. . . tube

100．．．清潔設備100. . . cleaning equipment

圖1係根據本發明之實施例之接合線清潔設備之示意圖；1 is a schematic view of a bonding wire cleaning apparatus according to an embodiment of the present invention;

圖2係顯示未經本發明之方法處理之銅線之實例之放大圖；及Figure 2 is an enlarged view showing an example of a copper wire which has not been treated by the method of the present invention;

圖3係顯示經本發明之方法處理之銅線之實例之放大圖。Figure 3 is an enlarged view showing an example of a copper wire treated by the method of the present invention.

10．．．線卷10. . . Line roll

20．．．線股20. . . Line stock

30．．．毛細管30. . . Capillary

40．．．線接合法40. . . Wire bonding

50A．．．管50A. . . tube

50B．．．管50B. . . tube

100．．．清潔設備100. . . cleaning equipment

Claims (18)

一種清潔接合線之系統，其包括：接合線卷；線接合設備；用於將接合線送料至該線接合設備之毛細管送料管；自該線卷延伸至該毛細管送料管之接合線之延伸部份；將至少一部份該接合線之延伸部份封閉於電漿、活化之氣體或還原氣體氛圍之構件，其中該構件包括管；及位於該管外表面之網狀電極及尺寸適配於該管內之金屬毛細管。 A system for cleaning a bonding wire, comprising: a bonding wire roll; a wire bonding apparatus; a capillary feed pipe for feeding a bonding wire to the wire bonding apparatus; and an extension extending from the wire winding to a bonding wire of the capillary feeding pipe a member for enclosing at least a portion of the extension of the bonding wire in a plasma, activated gas or reducing gas atmosphere, wherein the member comprises a tube; and a mesh electrode on the outer surface of the tube and sized to a metal capillary inside the tube. 如請求項1之系統，其進一步包含位於該管外表面之兩電極，該等電極係相互分離。 The system of claim 1, further comprising two electrodes on an outer surface of the tube, the electrodes being separated from each other. 如請求項1之系統，其中該管係由玻璃、塑料、陶瓷、介電材料或其他抗電漿蝕刻之材料製成。 A system according to claim 1, wherein the tube is made of glass, plastic, ceramic, dielectric material or other plasma-resistant material. 如請求項1之系統，其中該接合線係金、銀、鋁、銅或銅合金線。 The system of claim 1, wherein the bonding wire is a gold, silver, aluminum, copper or copper alloy wire. 如請求項1之系統，其中該氣體氛圍係氫氣、氬氣、氮氣、氧氣或其一或多者之混合物。 The system of claim 1, wherein the gas atmosphere is hydrogen, argon, nitrogen, oxygen or a mixture of one or more thereof. 一種清潔用於線接合程序之接合線之方法，其包括：將接合線自供應卷延伸至毛細管送料管進入該線接合程序；沿至少一部份介於該卷及該毛細管送料管之間之該接合線之延伸部份建立電漿、活化之氣體或還原氣體氛 圍，其中建立氣體氛圍包括提供封閉一部份該接合線之延伸部份之管，及位於該管外表面之網狀電極及尺寸適配於該管內之金屬毛細管；及在該電漿氛圍中清潔該接合線。 A method of cleaning a bond wire for a wire bonding process, comprising: extending a bond wire from a supply roll to a capillary feed tube into the wire bond process; along at least a portion between the roll and the capillary feed tube The extension of the bonding wire establishes a plasma, an activated gas or a reducing gas atmosphere The gas atmosphere includes a tube for providing a portion of the bonding wire, and a mesh electrode on the outer surface of the tube and a metal capillary sized to fit within the tube; and the plasma atmosphere Clean the bond line. 如請求項6之方法，其中該接合線係金、銀、鋁、銅或銅合金線。 The method of claim 6, wherein the bonding wire is a gold, silver, aluminum, copper or copper alloy wire. 如請求項6之方法，其中該氣體氛圍係氫氣、氬氣、氮氣、氧氣或其一或多者之混合物。 The method of claim 6, wherein the gas atmosphere is hydrogen, argon, nitrogen, oxygen or a mixture of one or more thereof. 如請求項6之方法，其中建立氣體氛圍包括在該管內提供氣體氛圍。 The method of claim 6, wherein establishing the gas atmosphere comprises providing a gas atmosphere within the tube. 如請求項9之方法，其中該管係由玻璃、塑料、陶瓷、介電材料或其他抗電漿蝕刻之材料製成。 The method of claim 9, wherein the tube is made of glass, plastic, ceramic, dielectric material or other plasma-resistant material. 如請求項9之方法，其中在該管內提供氣體氛圍包括將自外源生成之氣體注入該管內。 The method of claim 9, wherein providing a gas atmosphere within the tube comprises injecting a gas generated from an external source into the tube. 如請求項11之方法，其中注入氣體包括經由與該管連接之T或Y型連接件注入氣體。 The method of claim 11, wherein injecting the gas comprises injecting a gas via a T or Y-type connection to the tube. 如請求項11之方法，其中注入氣體包括經由該管之一端或兩端注入氣體。 The method of claim 11, wherein injecting the gas comprises injecting a gas through one or both ends of the tube. 如請求項9之方法，其中在該管內提供該氣體氛圍包括將氣體注入該管及在該管內激發氣體。 The method of claim 9, wherein providing the gas atmosphere within the tube comprises injecting a gas into the tube and exciting a gas within the tube. 如請求項14之方法，其中注入氣體包括經由與該管連接之T或Y型連接件注入氣體。 The method of claim 14, wherein injecting the gas comprises injecting a gas via a T or Y-type connection to the tube. 如請求項14之方法，其中注入氣體包括經該管之一端或兩端注入氣體。 The method of claim 14, wherein injecting the gas comprises injecting a gas through one or both ends of the tube. 如請求項6之方法，其中該氣體氛圍係氬氣與氫氣之混合物。 The method of claim 6, wherein the gas atmosphere is a mixture of argon and hydrogen. 如請求項6之方法，其中該氣體氛圍係氮氣與氫氣之混合物。The method of claim 6, wherein the gas atmosphere is a mixture of nitrogen and hydrogen.
TW099134598A 2009-10-16 2010-10-11 Clean with copper wire using plasma or activated gas TWI518772B (en)

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