TWI497772B - Light-emitting diode and its package structure - Google Patents
Light-emitting diode and its package structure Download PDFInfo
- Publication number
- TWI497772B TWI497772B TW102113781A TW102113781A TWI497772B TW I497772 B TWI497772 B TW I497772B TW 102113781 A TW102113781 A TW 102113781A TW 102113781 A TW102113781 A TW 102113781A TW I497772 B TWI497772 B TW I497772B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- emitting diode
- light
- package structure
- solid crystal
- Prior art date
Links
- 239000013078 crystal Substances 0.000 claims description 62
- 239000007787 solid Substances 0.000 claims description 46
- 239000003292 glue Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 108010010803 Gelatin Proteins 0.000 claims 1
- 229920000159 gelatin Polymers 0.000 claims 1
- 239000008273 gelatin Substances 0.000 claims 1
- 235000019322 gelatine Nutrition 0.000 claims 1
- 235000011852 gelatine desserts Nutrition 0.000 claims 1
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 239000003677 Sheet moulding compound Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
- H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
本發明涉及一種發光元件，尤其係一種發光二極體及其封裝結構。 The invention relates to a light-emitting element, in particular to a light-emitting diode and a package structure thereof.
LED(Light-emitting diode，發光二極體)產業係近幾年最受矚目的產業之一，發展至今，LED產品已具有節能、高效率、反應時間快、壽命週期時間長、且不含汞、具有環保效益等優點，因此被認為係新世代綠色節能照明的最佳光源。 LED (Light-emitting diode) industry is one of the most watched industries in recent years. Since its development, LED products have been energy-saving, high efficiency, fast response time, long life cycle, and no mercury. It has the advantages of environmental protection and is considered to be the best light source for the new generation of green energy-saving lighting.
在製造發光二極體過程中，業界通常使用固晶膠將發光二極體晶粒設置於基板上。然而，當發光二極體晶粒透過固晶膠固定的過程中，因為固晶膠的軟性變形，該發光二極體晶粒的底部會陷入至固晶膠的包圍中。由於發光二極體晶粒的底部被固晶膠遮蔽，導致來自發光二極體晶粒的部分光線會被固晶膠遮蔽而影響發光二極體整體的出光效率。 In the process of manufacturing a light-emitting diode, the industry generally uses a solid crystal glue to place the light-emitting diode die on the substrate. However, in the process of fixing the light-emitting diode crystal grains through the solid crystal glue, the bottom of the light-emitting diode crystal grains may be trapped in the encapsulation of the solid crystal glue due to the soft deformation of the solid crystal glue. Since the bottom of the light-emitting diode crystal grains is shielded by the solid crystal glue, part of the light from the light-emitting diode crystal grains is shielded by the solid crystal glue to affect the light-emitting efficiency of the entire light-emitting diode.
有鑒於此，有必要提供一種可以避免上述問題的發光二極體。 In view of the above, it is necessary to provide a light-emitting diode that can avoid the above problems.
一種封裝結構，用於封裝發光二極體晶粒，包括第一電極以及第二電極，該第一電極的第一表面包含固晶部以及引流部，該引流部環繞該固晶部該固晶部用於承載固晶膠以固定發光二極體晶粒 ，該引流部用於在發光二極體晶粒被壓向固晶膠時對發光二極體晶粒四周的固晶膠進行引流，以阻止固定膠堆積在發光二極體晶粒四周。 a package structure for encapsulating a light emitting diode die, comprising a first electrode and a second electrode, the first surface of the first electrode comprising a solid crystal portion and a drain portion, the drain portion surrounding the solid crystal portion The part is used to carry the solid glue to fix the light-emitting diode grains. The drain portion is configured to drain the solid crystal glue around the light-emitting diode crystal grains when the light-emitting diode crystal grains are pressed toward the solid crystal glue to prevent the fixing glue from accumulating around the light-emitting diode grains.
一種發光二極體，包括一種封裝結構以及發光二極體晶粒，該封裝結構包括第一電極以及第二電極，該第一電極的第一表面包含固晶部以及引流部，該引流部環繞該固晶部該固晶部用於承載固晶膠以固定發光二極體晶粒，該引流部用於在發光二極體晶粒被壓向固晶膠時對發光二極體晶粒四周的固晶膠進行引流，以阻止固定膠堆積在發光二極體晶粒四周，該發光二極體晶粒通過固晶膠設置於該第一電極上並在該第一電極的第一表面上形成一島狀結構，該固晶膠部分收容在該引流部內。 A light emitting diode includes a package structure and a light emitting diode die. The package structure includes a first electrode and a second electrode, and the first surface of the first electrode includes a solid crystal portion and a drain portion, and the drain portion surrounds The solid crystal portion is configured to carry a solid crystal glue to fix the light-emitting diode crystal grains, and the drain portion is used for the periphery of the light-emitting diode grain when the light-emitting diode crystal grain is pressed toward the solid crystal glue The solid crystal glue is drained to prevent the fixing glue from accumulating around the light-emitting diode crystal grains, and the light-emitting diode crystal grains are disposed on the first electrode through the solid crystal glue and on the first surface of the first electrode An island-like structure is formed, and the solid glue portion is housed in the drain portion.
由於該第一電極的第一表面包括引流部，且該引流部環繞該固晶部。當發光二極體晶粒通過固晶膠固定於該固晶部上時，該固晶膠流向該引流部，從而避免固晶膠在發光二極體晶粒四周積聚，進而保證該發光二極體晶粒的正常發光。 The first surface of the first electrode includes a drain portion, and the drain portion surrounds the solid crystal portion. When the light-emitting diode crystal grains are fixed on the solid crystal portion by the solid crystal glue, the solid crystal glue flows to the drain portion, thereby preventing the solid crystal glue from accumulating around the crystal grains of the light-emitting diode, thereby ensuring the light-emitting diode Normal luminescence of body grains.
10‧‧‧基板 10‧‧‧Substrate
21‧‧‧第一電極 21‧‧‧First electrode
210、220‧‧‧第一表面 210, 220‧‧‧ first surface
22‧‧‧第二電極 22‧‧‧second electrode
211‧‧‧引流部 211‧‧‧Drainage Department
212‧‧‧打線區 212‧‧‧Line area
213‧‧‧固晶區 213‧‧‧ Gujing District
30‧‧‧反射杯 30‧‧‧Reflection Cup
40‧‧‧發光二極體晶片 40‧‧‧Light Diode Wafer
50‧‧‧齊納二極體 50‧‧‧Zina diode
60‧‧‧導線 60‧‧‧ wire
70‧‧‧封裝層 70‧‧‧Encapsulation layer
80‧‧‧固晶膠 80‧‧‧solid glue
100‧‧‧封裝結構 100‧‧‧Package structure
200‧‧‧發光二極體 200‧‧‧Lighting diode
圖1係本發明的封裝結構的切面示意圖。 1 is a schematic cross-sectional view of a package structure of the present invention.
圖2係本發明的封裝結構的俯視示意圖。 2 is a top plan view of the package structure of the present invention.
圖3係本發明的發光二極體的切面示意圖。 3 is a schematic cross-sectional view of a light-emitting diode of the present invention.
圖4係本發明的發光二極體的俯視示意圖。 4 is a top plan view of a light emitting diode of the present invention.
以下參照圖示，對本發明的發光二極體晶粒及發光二極體晶粒的製造方法進行進一步的說明。 Hereinafter, a method of manufacturing a light-emitting diode crystal grain and a light-emitting diode crystal grain of the present invention will be further described with reference to the drawings.
圖1-2示出了本發明的封裝結構100的示意圖。該封裝結構100用於封裝發光二極體200(參閱圖3-4)。該封裝結構100包括基板10以及嵌設於該基板10中的第一電極21以及第二電極22。該基板10由電磁相容性(EMC/Electrical Magnetic Compatibility)材料、尼龍PPA(Polyphthalamide)材料、或片狀模塑材料(SMC/Sheet Molding Compound)製成。該第一電極21與該第二電極22優選為金屬電極。 1-2 show schematic views of a package structure 100 of the present invention. The package structure 100 is used to package the light emitting diode 200 (see FIGS. 3-4). The package structure 100 includes a substrate 10 and a first electrode 21 and a second electrode 22 embedded in the substrate 10. The substrate 10 is made of an electromagnetic compatibility (EMC/Electrical Magnetic Compatibility) material, a nylon PPA (Polyphthalamide) material, or a sheet molding material (SMC/Sheet Molding Compound). The first electrode 21 and the second electrode 22 are preferably metal electrodes.
該第一電極21具有一第一表面210，該第二電極22具有一第一表面220。該第一電極21的第一表面210與該第二電極22的第一表面220在同一水平面上。在圖1中，該第一電極21的第一表面210以及該第二電極22的第一表面220分別為第一電極21、第二電極22的上表面。該第一電極21的第一表面210的面積大於該第二電極22的第一表面220的面積。該基板10包括一位於該第一電極21的第一表面210與第二電極22的第一表面220上、並環繞第一電極21和第二電極22的基板上部，本實施例中，將該基板上部定義為反射杯30。 The first electrode 21 has a first surface 210 and the second electrode 22 has a first surface 220. The first surface 210 of the first electrode 21 is on the same level as the first surface 220 of the second electrode 22. In FIG. 1, the first surface 210 of the first electrode 21 and the first surface 220 of the second electrode 22 are upper surfaces of the first electrode 21 and the second electrode 22, respectively. The area of the first surface 210 of the first electrode 21 is larger than the area of the first surface 220 of the second electrode 22. The substrate 10 includes an upper portion of the substrate on the first surface 210 of the first electrode 21 and the first surface 220 of the second electrode 22 and surrounding the first electrode 21 and the second electrode 22. In this embodiment, the substrate The upper portion of the substrate is defined as a reflective cup 30.
該第一電極21的第一表面210包括固晶部213、打線部212以及引流部211。該引流部211隔開該固晶部213與打線部212。該反射杯30圍繞該固晶部213、打線部212以及引流部211。在本實施例中，該引流部211為一自該第一電極21的第一表面210向下凹陷溝槽並且環繞該固晶部213。該固晶部213與該打線部212在同一水平面上。該引流部211深度小於該第一電極21的厚度。優選地，該引流部211的深度接近於該第一電極21的厚度但不貫穿該第一電極21。例如，當該第一電極21只有0.2mm(毫米)時，該引流部 211的深度的取值在小於0.2mm的範圍內。當該第一電極21有0.25mm時，該引流部211的深度的取值在小於0.25mm的範圍內。優選地，該固晶部213位於該反射杯30圍設的區域的中間位置。 The first surface 210 of the first electrode 21 includes a solid crystal portion 213, a wire bonding portion 212, and a drain portion 211. The drain portion 211 separates the solid crystal portion 213 from the wire bonding portion 212. The reflector cup 30 surrounds the solid crystal portion 213, the wire bonding portion 212, and the drain portion 211. In the embodiment, the drain portion 211 is a recessed groove from the first surface 210 of the first electrode 21 and surrounds the solid crystal portion 213. The solid crystal portion 213 and the wire bonding portion 212 are on the same horizontal surface. The depth of the drain portion 211 is smaller than the thickness of the first electrode 21. Preferably, the depth of the drain portion 211 is close to the thickness of the first electrode 21 but does not penetrate the first electrode 21. For example, when the first electrode 21 is only 0.2 mm (mm), the drain portion The depth of 211 is in the range of less than 0.2 mm. When the first electrode 21 has 0.25 mm, the depth of the drain portion 211 is in a range of less than 0.25 mm. Preferably, the solid crystal portion 213 is located at an intermediate position of a region surrounded by the reflective cup 30.
圖3-4示出了本發明的發光二極體200的示意圖。該發光二極體200的發光二極體晶粒40採用上述封裝結構100進行封裝。在該反射杯30內，發光二極體晶粒40通過固晶膠80設置於該第一電極21的第一表面210上，並在該第一電極21的第一表面210上形成一島狀結構。可以理解地，該發光二極體200進一步包括一齊納二極體50設置於該第二電極22的第一表面220上，並通過導線60電連接至該第一電極21。該齊納二極體50與該發光二極體晶粒40反向並聯，避免發光二極體晶粒40受到靜電脈衝放電的破壞。該反射杯30圍繞該發光二極體晶粒40以及齊納二極體50。該發光二極體晶粒40通過導線60分別電連接至該第一電極21的第一表面210與第二電極22的第一表面220。該發光二極體200還包括覆蓋該發光二極體晶粒40的封裝層70。可以理解地，該反射杯30不限定於必須由該基板10的上部構成，也可以係與基板10分離製造而後續組裝至一起的兩個不同元件。該封裝層70可包含螢光轉換物質或/及擴散粉。 3-4 show schematic views of a light emitting diode 200 of the present invention. The LED die 40 of the LED 200 is packaged by the package structure 100 described above. In the reflector cup 30, the LED die 40 is disposed on the first surface 210 of the first electrode 21 through the bonding adhesive 80, and forms an island on the first surface 210 of the first electrode 21. structure. The light-emitting diode 200 further includes a Zener diode 50 disposed on the first surface 220 of the second electrode 22 and electrically connected to the first electrode 21 via a wire 60. The Zener diode 50 is connected in anti-parallel with the LED die 40 to prevent the LED dipole 40 from being damaged by electrostatic pulse discharge. The reflector cup 30 surrounds the LED die 40 and the Zener diode 50. The LED die 40 is electrically connected to the first surface 210 of the first electrode 21 and the first surface 220 of the second electrode 22 via wires 60, respectively. The light emitting diode 200 further includes an encapsulation layer 70 covering the light emitting diode die 40. It can be understood that the reflector cup 30 is not limited to be composed of the upper portion of the substrate 10, and may be two different components that are separately manufactured from the substrate 10 and subsequently assembled together. The encapsulation layer 70 may comprise a fluorescent conversion substance or/and a diffusion powder.
當發光二極體晶粒40裝設於該第一電極21上時，用於固定該發光二極體晶粒40的固晶膠80在被發光二極體晶粒40的擠壓之後受力變形。該固晶膠80受力時，除受到該發光二極體晶粒40所施加的外力之外，其四周沒有任何阻力。從而，該固晶膠80以一定速度(該速度受其黏度大小影響)向四周擴散，也即係向遠離該發光二極體晶粒40的方向擴散，也即係向該引流部211擴散。當蔓延 至該引流部211時，該固晶膠80流入該引流部211。當部分固晶膠80流入該引流部211後，固晶膠80的其餘部分繼續向該引流部211蔓延，從而避免固晶膠80在該固晶部213上積聚。由於該引流部211設置於該固晶部213與打線部212之間並且該引流部211具有一定的深度，因此可以完全容納溢出的固晶膠80。優選地，該發光二極體晶粒40的底面積接近且小於該固晶部213的面積，以使該固晶膠80在變形時能更為順利地流入至該引流部211內。 When the light-emitting diode die 40 is mounted on the first electrode 21, the die bond 80 for fixing the light-emitting diode die 40 is pressed after being pressed by the light-emitting diode die 40. Deformation. When the die bonding adhesive 80 is stressed, there is no resistance except for the external force applied by the light-emitting diode die 40. Therefore, the die bonding adhesive 80 is diffused to the periphery at a constant speed (the velocity is affected by the viscosity thereof), that is, diffused away from the light emitting diode die 40, that is, diffused toward the drain portion 211. When spread When the drain portion 211 is reached, the die bonding paste 80 flows into the drain portion 211. When a portion of the die bond 80 flows into the drain portion 211, the remaining portion of the die bond 80 continues to propagate toward the drain portion 211, thereby preventing the die bond 80 from accumulating on the die attach portion 213. Since the drain portion 211 is disposed between the solid crystal portion 213 and the wire bonding portion 212 and the drain portion 211 has a certain depth, the overflow solid glue 80 can be completely accommodated. Preferably, the bottom surface area of the light emitting diode die 40 is close to and smaller than the area of the solid crystal portion 213, so that the die bonding adhesive 80 can flow into the drain portion 211 more smoothly when deformed.
由於固晶膠80不至於在該發光二極體晶粒40附近積聚，因此不會遮擋該發光二極體晶粒40發出的光線，從而保證該發光二極體晶粒40的正常出光。此外，由於該第一電極21的第一表面210的面積相對較大，則該發光二極體晶粒40可盡可能地設置於該反射杯30的中間部分，以至於從該發光二極體晶粒40出射的光線在各個方向上與反射杯30之間的光程大致相等，使各個方向上的出光更為均勻。 Since the solid crystal adhesive 80 does not accumulate in the vicinity of the light emitting diode die 40, the light emitted from the light emitting diode die 40 is not blocked, thereby ensuring the normal light output of the light emitting diode die 40. In addition, since the area of the first surface 210 of the first electrode 21 is relatively large, the light emitting diode die 40 can be disposed as much as possible in the middle portion of the reflective cup 30, so that the light emitting diode is removed from the light emitting diode. The light rays exiting the crystal grains 40 are substantially equal in optical path between the reflective cups 30 in all directions, so that the light in each direction is more uniform.
需要說明的係，引流部211不局限為凹槽，也可以為其他引流結構，只要其能夠在發光二極體晶粒被壓向固晶膠時對發光二極體晶粒四周的固晶膠進行引流，以阻止固定膠堆積在發光二極體晶粒四周即可。 It should be noted that the drainage portion 211 is not limited to a groove, and may be other drainage structures as long as it can adhere to the solid crystal glue around the light-emitting diode crystal grains when the light-emitting diode crystal grains are pressed toward the solid crystal glue. Drainage is performed to prevent the fixing glue from accumulating around the crystal grains of the light-emitting diode.
應該指出，上述實施方式僅為本發明的較佳實施方式，本領域技術人員還可在本發明精神內做其他變化。這些依據本發明精神所做的變化，都應包含在本發明所要求保護的範圍之內。 It should be noted that the above-described embodiments are merely preferred embodiments of the present invention, and those skilled in the art can make other changes within the spirit of the present invention. All changes made in accordance with the spirit of the invention are intended to be included within the scope of the invention.
10‧‧‧基板 10‧‧‧Substrate
21‧‧‧第一電極 21‧‧‧First electrode
22‧‧‧第二電極 22‧‧‧second electrode
211‧‧‧引流部 211‧‧‧Drainage Department
212‧‧‧打線區 212‧‧‧Line area
213‧‧‧固晶區 213‧‧‧ Gujing District
30‧‧‧反射杯 30‧‧‧Reflection Cup
40‧‧‧發光二極體晶粒 40‧‧‧Light-emitting diode grains
50‧‧‧齊納二極體 50‧‧‧Zina diode
60‧‧‧導線 60‧‧‧ wire
70‧‧‧封裝層 70‧‧‧Encapsulation layer
80‧‧‧固晶膠 80‧‧‧solid glue
200‧‧‧發光二極體 200‧‧‧Lighting diode
Claims (10)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310131330.XA CN104112806A (en) | 2013-04-17 | 2013-04-17 | Light emitting diode and packaging structure thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201442289A TW201442289A (en) | 2014-11-01 |
| TWI497772B true TWI497772B (en) | 2015-08-21 |
Family
ID=51709526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102113781A TWI497772B (en) | 2013-04-17 | 2013-04-18 | Light-emitting diode and its package structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104112806A (en) |
| TW (1) | TWI497772B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104638091B (en) * | 2014-12-18 | 2017-10-24 | 上海大学 | LED glass substrates |
| CN107240555B (en) * | 2017-05-31 | 2020-04-07 | 江苏长电科技股份有限公司 | Manufacturing method of packaging structure for stacking flip chip and ball bonding chip |
| CN113838962B (en) * | 2018-08-22 | 2024-09-13 | 光宝光电(常州)有限公司 | LED packaging structure and car lamp system |
| CN117410428B (en) * | 2023-12-13 | 2024-02-23 | 深圳市绿源极光科技有限公司 | LED chip packaging structure for COB light source |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120256225A1 (en) * | 2008-06-23 | 2012-10-11 | Lg Innotek Co., Ltd. | Semiconductor device package including a paste member |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7128444B2 (en) * | 2002-02-28 | 2006-10-31 | Rohm Co., Ltd. | Light emitting diode lamp |
| CN1960013A (en) * | 2005-11-02 | 2007-05-09 | 李洲科技股份有限公司 | Manufacturing method of light emitting diode |
| CN101578695B (en) * | 2006-12-26 | 2012-06-13 | 松下电器产业株式会社 | Semiconductor element mounting structure and semiconductor element mounting method |
| CN101976720B (en) * | 2010-09-13 | 2013-06-26 | 深圳雷曼光电科技股份有限公司 | Light emitting diode (LED) and encapsulating method thereof |
| JP2012142426A (en) * | 2010-12-28 | 2012-07-26 | Toshiba Corp | Led package and method for manufacturing the same |
| CN201936917U (en) * | 2010-12-31 | 2011-08-17 | 昆山琉明光电有限公司 | Light-emitting diode packaging structure |
-
2013
- 2013-04-17 CN CN201310131330.XA patent/CN104112806A/en active Pending
- 2013-04-18 TW TW102113781A patent/TWI497772B/en not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120256225A1 (en) * | 2008-06-23 | 2012-10-11 | Lg Innotek Co., Ltd. | Semiconductor device package including a paste member |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201442289A (en) | 2014-11-01 |
| CN104112806A (en) | 2014-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6213428B2 (en) | Light emitting device and manufacturing method thereof | |
| JP5730680B2 (en) | LED light emitting device and manufacturing method thereof | |
| KR101825473B1 (en) | Light emitting device package and method of fabricating the same | |
| TWI505519B (en) | Light-emitting diode light bar and manufacturing method thereof | |
| US20160155915A1 (en) | Method of manufacturing light emitting diode package structure | |
| CN107425102A (en) | Packaging structure of ultraviolet light emitting diode | |
| CN102760816A (en) | LED (light emitting diode) packaging structure and manufacturing method thereof | |
| TWI497772B (en) | Light-emitting diode and its package structure | |
| TW200939515A (en) | Package of light-emitting diode and manufacturing method thereof | |
| TW201429005A (en) | LED package with integrated reflective mask on ZENER diode | |
| CN204204900U (en) | A kind of LED encapsulation structure | |
| TWI446595B (en) | Semiconductor package structure | |
| CN204407358U (en) | A kind of TOP LED support and TOP LED component thereof | |
| TWI538256B (en) | Led manufacturing method | |
| CN105826447A (en) | Package structure and method for fabricating the same | |
| TWI478388B (en) | LED package structure | |
| TWI506827B (en) | Light-emitting diode | |
| CN202167538U (en) | Package structure | |
| TW201603325A (en) | Method of manufacturing package structure | |
| CN104124320B (en) | Light emitting diode | |
| TWI447970B (en) | Led apparatus and method for manufacturing the same | |
| TW201419588A (en) | Light-emitting diode | |
| US9559273B2 (en) | Light-emitting package structure and method of fabricating the same | |
| US9018668B2 (en) | Light emitting diode package | |
| TWI521745B (en) | Light-emitting diode package structure and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |