CN101976720B - Light emitting diode (LED) and encapsulating method thereof - Google Patents
Light emitting diode (LED) and encapsulating method thereof Download PDFInfo
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- CN101976720B CN101976720B CN2010102797405A CN201010279740A CN101976720B CN 101976720 B CN101976720 B CN 101976720B CN 2010102797405 A CN2010102797405 A CN 2010102797405A CN 201010279740 A CN201010279740 A CN 201010279740A CN 101976720 B CN101976720 B CN 101976720B
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
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- 238000005538 encapsulation Methods 0.000 abstract description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Led Device Packages (AREA)
Abstract
The invention discloses a light emitting diode (LED) and an encapsulating method thereof. The method comprises the following steps: providing a stacker with a groove and an LED blue light wafer, depositing or evaporating metal or alloy on the bottom of the blue light wafer, fixing the LED blue light wafer with metal or alloy deposited or evaporated on the bottom in the groove by solid crystal adhesive, and opening a rubber overflow groove leading the groove to be communicated with the outside on the surface of the stacker; electrically connecting negative and positive electrodes of the LED blue light wafer with negative and positive electrodes of the stacker respectively by lead wires; and encapsulating and molding the surface of the LED blue light wafer in the groove by external seal adhesive. By opening the rubber overflow groove on the surface of the stacker, residual external seal adhesive can flow to the outside of the groove through the rubber overflow groove when the external seal adhesive is used for encapsulation, and a horizontal plane is formed in the whole groove, so the light emitted by the LED blue light wafer can be radiated uniformly through the rubber on the horizontal plane, and the light emitting uniformity of the whole LED is consistent.
Description
Technical field
The present invention relates to a kind of lamp, particularly relate to a kind of LED and method for packing thereof.
Background technology
White light LEDs is as a kind of new type light source, rely on it low power consuming, pollution-free, volume is little and the advantage such as easy to use and flexible, be widely used in building, the small size decorative lighting of solar street light, flashlight, auto lamp, desk lamp, backlight, shot-light, garden, wall lamp, household and integrate is decorated and the commercial lighting of advertisement etc.
Application number is that 200910109512.0 Chinese patent discloses a kind of LED lamp and method for packing, comprises a LED wafer and carries the stacker of this LED wafer, and the surface of described LED wafer also is packaged with one deck external sealant (not shown).
Yet, the variable thickness of the external sealant (not shown) of the above-mentioned LED of spreading upon wafer surface causes, be that in metal cup, intrinsic LED wafer height is not different with the space size of consolidating LED wafer height, therefore it is also inconsistent to smear the thickness of external sealant, and external sealant glue is because itself viscosity and the glue amount above the LED wafer are inhomogeneous, so make the surface of whole packaging plastic not on a horizontal plane, easily cause the LED issued light inhomogeneous, thereby also cause whole LED bright dipping inhomogeneous.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of LED and method for packing thereof, and that can improve LED goes out light consistency and uniformity.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of LED method for packing is provided, comprise the steps: to provide one to have the LED blue light wafer that the stacker of Baltimore groove and bottom deposition or evaporation have metal or alloy, there is the bottom of metal or alloy to be fixed in Baltimore groove described LED blue light wafer deposition or evaporation by crystal-bonding adhesive, offers the excessive glue groove that Baltimore groove is in communication with the outside on the surface of stacker; Be electrically connected to the positive and negative electrode of described stacker respectively with the positive and negative electrode of wire with described LED blue light wafer; Carry out encapsulated moulding in the blue light of LED described in Baltimore groove wafer surface with external sealant.
Wherein, described excessive glue groove depth is 1/8～1/6 of the described Baltimore groove degree of depth.
Wherein, comprise step respectively with before the positive and negative electrode of described stacker at the positive and negative electrode that connects LED blue light wafer with wire: downcut one jiao on stacker, form a packaging label place that is used for pasting packaging label, described excessive glue groove is arranged on the surface of described stacker in contiguous packaging label place.
Wherein, by comprising step before the step that the positive and negative electrode of described LED blue light wafer is electrically connected to the positive and negative electrode of described stacker respectively after with crystal-bonding adhesive, described LED blue light wafer being fixed on step on stacker, with wire: toast reinforcing.
Wherein, then carry out also comprising step after encapsulated moulding with external sealant: the finished product after moulding is toasted again, then peel off, color-division, adhesive tape.
Wherein, described external sealant is epoxy resin OXY or silica gel SILICONE or silicones or without shadow UV glue.
for solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of LED is provided, the stacker that comprises a LED blue light wafer and this LED blue light wafer of carrying, offer a Baltimore groove on described stacker, described LED blue light wafer is arranged in described Baltimore groove, be provided with metal or alloy on the bottom of described LED blue light wafer, just all have on described LED blue light wafer and described stacker, negative electrode, the positive and negative electrode of described LED blue light wafer is electrically connected to by wire with the positive and negative electrode of described stacker respectively, be provided with external sealant in the surface of described LED blue light wafer in described stacker, offer the excessive glue groove that Baltimore groove is in communication with the outside on the surface of described stacker.
Wherein, described excessive glue groove depth is 1/8～1/6 of the described Baltimore groove degree of depth.
Wherein, the Yi Jiaochu of described stacker has a packaging label place that is used for pasting packaging label.
Wherein, described metal is golden Au, copper Cu, tin Sn, silver-colored Ag or aluminium Al, and described alloy is Sillim's alloy or sn-ag alloy.
the invention has the beneficial effects as follows: the LED that is different from prior art is because the variable thickness of the external sealant that spreads upon LED blue light wafer surface causes, colloid does not cause the inhomogeneous situation of LED bright dipping on a horizontal plane, LED of the present invention is by offering an excessive glue groove on the surface of described stacker, the glue groove that overflows is in communication with the outside Baltimore groove, so when Baltimore groove being encapsulated the filling external sealant, on the Baltimore groove inner surface, unnecessary irregular external sealant will go out outside Baltimore groove by the glue concentrated flow that overflows, make and form a horizontal plane in whole Baltimore groove, thereby the light that LED blue light wafer sends can exhale uniformly by the colloid that is horizontal plane, the light-emitting uniformity of whole LED is consistent.
Description of drawings
Fig. 1 is the vertical view schematic diagram of LED of the present invention;
Fig. 2 is the schematic cross-section of LED of the present invention;
Fig. 3 is the stereogram of LED of the present invention;
Fig. 4 adopts the present invention to make the process chart of LED.
Embodiment
By describing technology contents of the present invention, structural feature in detail, being realized purpose and effect, below in conjunction with execution mode and coordinate accompanying drawing to be explained in detail.
See also Fig. 1, Fig. 2 and Fig. 3, LED of the present invention comprises a LED blue light wafer 1 and the stacker 2 that carries this LED blue light wafer 1.Has Baltimore groove 21 on described stacker 2.Described LED blue light wafer 1 is fixed in described Baltimore groove 21 by a chemical crystal-bonding adhesive 3, and in the present embodiment, described crystal-bonding adhesive 3 is elargol or insulating cement.Be provided with external sealant 5 in the surface of described LED blue light wafer 1 in described Baltimore groove 21, offer the excessive glue groove 22 that Baltimore groove 21 is in communication with the outside on the surface of described stacker 2, described excessive glue groove 22 degree of depth are 1/8～1/6 of described Baltimore groove 21 degree of depth.
LED of the present invention is by offering an excessive glue groove 22 on the surface of described stacker 2, the glue groove 22 that overflows is in communication with the outside Baltimore groove 21, so stacker 2 unnecessary external sealant 5 when encapsulation external sealant 5 just can flow out outside Baltimore groove 21 by the glue groove 22 that overflows, thereby make horizontal plane of the interior formation of whole Baltimore groove 21, the light that LED blue light wafer sends just can exhale uniformly by the colloid that is horizontal plane, and the light-emitting uniformity of whole LED like this is consistent.
Wherein, described LED blue light wafer 1 has positive and negative two electrodes that can switch on, and described stacker 2 has positive and negative electrode.With wire 4, the positive and negative electrode of described LED blue light wafer 1 is welded with the positive and negative electrode of described stacker 2 respectively.Described wire is the metal wires such as gold thread, aluminum steel, copper cash or silver-colored line.
Described LED blue light wafer comprises Sapphire Substrate and deposition or evaporation at the metal or alloy of sapphire bottom, and described metal is golden Au, copper Cu, tin Sn, silver-colored Ag, aluminium Al, and described alloy is Sillim's alloy or sn-ag alloy.Described metal or alloy in Sapphire Substrate bottom setting is conducive to the light that LED blue light wafer sends is more reflected on the one hand, can increase radiating effect on the other hand.
In the present embodiment, the Yi Jiaochu of described stacker 2 has a packaging label place 23 that is used for pasting packaging label.The surface that described excessive glue groove 22 is arranged on described stacker 2 is in contiguous packaging label place 23.
In one embodiment, described external sealant 5 is epoxy resin OXY or silica gel SILICONE or silicones or without shadow UV glue.
See also Fig. 4, the invention provides a kind of LED method for packing and comprise the steps:
At first, one stacker 2 and a LED blue light wafer 1 are provided, offer a Baltimore groove 21 on stacker 2, at the bottom of blue light wafer 1 deposition or evaporation metal or alloy, there is the described LED blue light wafer 1 of metal or alloy to be fixed in described Baltimore groove 21 bottom deposition or evaporation by crystal-bonding adhesive, offers the excessive glue groove 22 that Baltimore groove 21 is in communication with the outside on the surface of stacker 2;
Secondly, above-mentioned semi-finished product are put into baking box carry out baking-curing;
Again, with wire 4, the positive and negative electrode of described LED blue light wafer 1 is welded with the positive and negative electrode of described stacker 2 respectively;
Then, stacker 2 is carried out preheating, above-mentioned semi-finished product after connecting by wire are put into baking box toast;
Carry out encapsulated moulding in the wafer surface of LED blue light described in Baltimore groove 21 with external sealant 5;
Then, will continue to put into baking box with the semi-finished product after external sealant 5 encapsulation and carry out baking-curing;
At last, test, the LED finished product after moulding is toasted, peels off, then color-division, adhesive tape, packing warehouse-in.
the LED that is different from prior art is because the variable thickness of the external sealant that spreads upon LED blue light wafer surface causes, and covering glue is because the glue amount above viscosity own and the inhomogeneous LED of the making wafer of the glue amount above the LED wafer does not cause the inhomogeneous situation of LED bright dipping on a horizontal plane, LED of the present invention is by offering an excessive glue groove on the surface of described stacker, the glue groove that overflows is in communication with the outside Baltimore groove, so when Baltimore groove being encapsulated the filling external sealant, on the Baltimore groove inner surface, unnecessary irregular external sealant will go out outside Baltimore groove by the glue concentrated flow that overflows, make and form a horizontal plane in whole Baltimore groove, thereby the light that LED blue light wafer sends can exhale uniformly by the colloid that is horizontal plane, the light-emitting uniformity of whole LED is consistent.
In sum, the present invention can solve the inhomogeneous situation of LED bright dipping, uses the light-emitting uniformity of the LED that method for packing of the present invention makes consistent, and bright dipping is effective.
The above is only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or equivalent flow process conversion that utilizes specification of the present invention and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in scope of patent protection of the present invention.
Claims (7)
1. the method for packing of a LED, is characterized in that, comprises the steps:
Provide one to have the LED blue light wafer that the stacker of Baltimore groove and bottom deposition or evaporation have metal or alloy, there is the bottom of metal or alloy to be fixed in Baltimore groove described LED blue light wafer deposition or evaporation by crystal-bonding adhesive, offers the excessive glue groove that Baltimore groove is in communication with the outside on the surface of stacker;
Be electrically connected to the positive and negative electrode of described stacker respectively with the positive and negative electrode of wire with described LED blue light wafer;
Encapsulated moulding is carried out with external sealant in surface at the blue light of LED described in Baltimore groove wafer;
Comprise step respectively with before the positive and negative electrode of described stacker at the positive and negative electrode that connects LED blue light wafer with wire: downcut one jiao on stacker, form a packaging label place that is used for pasting packaging label, described excessive glue groove is arranged on the contiguous packaging label place on described stacker surface.
2. the method for packing of LED according to claim 1, is characterized in that, described excessive glue groove depth is 1/8 ~ 1/6 of the described Baltimore groove degree of depth.
3. the method for packing of LED according to claim 1, it is characterized in that, by comprising step before the step that the positive and negative electrode of described LED blue light wafer is electrically connected to the positive and negative electrode of described stacker respectively after with crystal-bonding adhesive, described LED blue light wafer being fixed on step on stacker, with wire: toast reinforcing.
4. the method for packing of LED according to claim 3, is characterized in that, carries out also comprising step after encapsulated moulding with external sealant: the finished product after moulding is toasted again, then peel off, color-division, adhesive tape.
5. the method for packing of LED according to claim 1, is characterized in that, described external sealant is epoxy resin OXY or silica gel SILICONE or silicones or without shadow UV glue.
6. LED, the stacker that comprises a LED blue light wafer and this LED blue light wafer of carrying, offer a Baltimore groove on described stacker, described LED blue light wafer is arranged in described Baltimore groove, be provided with metal or alloy on the bottom of described LED blue light wafer, just all have on described LED blue light wafer and described stacker, negative electrode, the positive and negative electrode of described LED blue light wafer is electrically connected to by wire with the positive and negative electrode of described stacker respectively, it is characterized in that, be provided with external sealant in the surface of described LED blue light wafer in described stacker, offer the excessive glue groove that Baltimore groove is in communication with the outside on the surface of described stacker, described excessive glue groove depth is 1/8 ~ 1/6 of the described Baltimore groove degree of depth, the Yi Jiaochu of described stacker has a packaging label place that is used for pasting packaging label.
7. LED according to claim 6, is characterized in that, described metal is golden Au, copper Cu, tin Sn, silver-colored Ag or aluminium Al, and described alloy is Sillim's alloy or sn-ag alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102797405A CN101976720B (en) | 2010-09-13 | 2010-09-13 | Light emitting diode (LED) and encapsulating method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102797405A CN101976720B (en) | 2010-09-13 | 2010-09-13 | Light emitting diode (LED) and encapsulating method thereof |
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| CN101976720A CN101976720A (en) | 2011-02-16 |
| CN101976720B true CN101976720B (en) | 2013-06-26 |
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| US10248372B2 (en) | 2013-12-31 | 2019-04-02 | Ultravision Technologies, Llc | Modular display panels |
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| CN102738324B (en) * | 2012-04-25 | 2013-07-10 | 江苏汉莱科技有限公司 | LED (light-emitting diode) COB (Chip on Board) packaging technology and applications thereof |
| CN104112806A (en) * | 2013-04-17 | 2014-10-22 | 展晶科技(深圳)有限公司 | Light emitting diode and packaging structure thereof |
| US9195281B2 (en) | 2013-12-31 | 2015-11-24 | Ultravision Technologies, Llc | System and method for a modular multi-panel display |
| US10706770B2 (en) | 2014-07-16 | 2020-07-07 | Ultravision Technologies, Llc | Display system having module display panel with circuitry for bidirectional communication |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807629A (en) * | 2009-02-12 | 2010-08-18 | 亿光电子工业股份有限公司 | Light emitting diode packaging structure |
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| JP2981370B2 (en) * | 1993-07-16 | 1999-11-22 | シャープ株式会社 | MID chip type light emitting device |
| US6835960B2 (en) * | 2003-03-03 | 2004-12-28 | Opto Tech Corporation | Light emitting diode package structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807629A (en) * | 2009-02-12 | 2010-08-18 | 亿光电子工业股份有限公司 | Light emitting diode packaging structure |
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| JP特开平7-38154A 1995.02.07 |
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| US10248372B2 (en) | 2013-12-31 | 2019-04-02 | Ultravision Technologies, Llc | Modular display panels |
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