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TWI416230B - Pixel array - Google Patents

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Publication number
TWI416230B
TWI416230B TW98143932A TW98143932A TWI416230B TW I416230 B TWI416230 B TW I416230B TW 98143932 A TW98143932 A TW 98143932A TW 98143932 A TW98143932 A TW 98143932A TW I416230 B TWI416230 B TW I416230B
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pixel
transistor
pixel array
scan line
pixels
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TW98143932A
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Chinese (zh)
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TW201122683A (en
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Chih Chung Liu
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Century Display Shenzhen Co
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Abstract

A pixel array comprises a plurality of scan lines extended along a row direction in a zigzag manner, a plurality of data lines extended along a column direction and a plurality of pixels connected the scan lines and the data lines. Each pixel arranged in n-th row includes a first sub-pixel and a second sub-pixel. The first sub-pixel includes a first transistor and a first pixel electrode. A first gate of the first transistor is connected to the (n+1)-th scan line. A first drain of the first transistor is connected to the first pixel electrode. A second sub-pixel includes a second transistor and a second pixel electrode. A second gate of the second transistor is connected to the n-th scan line. A second drain of the second transistor is connected to the second sub-pixel electrode. A first source of the first transistor and a second source of the second transistor are connected to the same data line among the data lines.

Description

畫素陣列 Pixel array

本發明是有關於一種顯示陣列,且特別是有關於一種畫素陣列。 This invention relates to a display array, and more particularly to a pixel array.

一般而言,平面顯示器中主要是由一顯示面板以及多個驅動晶片(Driver IC)所構成,其中顯示面板上具有畫素陣列,而畫素陣列中的畫素是藉由對應之掃描線以及對應之資料線所驅動。為了使得平面顯示器的產品更為普及,業者皆如火如荼地進行降低成本作業,近年來一種資料驅動晶片減半(half source driver)的架構設計被提出,其主要是利用畫素陣列上的佈局來降低資料驅動晶片的使用量。 In general, a flat panel display is mainly composed of a display panel and a plurality of driver ICs, wherein the display panel has a pixel array, and the pixels in the pixel array are corresponding to the scan lines and Driven by the corresponding data line. In order to make flat-panel display products more popular, the industry is in full swing to reduce costs. In recent years, a data-driven wafer half-source architecture design has been proposed, which mainly uses the layout on the pixel array to reduce The amount of data driven wafers used.

圖1A為習知之一種畫素陣列的示意圖。請參考圖1,在習知一種畫素陣列100a的設計中,兩條掃描線120a位於相鄰兩列畫素130a、130b之間,其中二畫素130a、130b中之主動元件140、150的閘極142、152分別位於掃描線120a的兩側。在具有上述架構之主動元件140、150的製作流程中,主動元件140、150的閘極142、152與主動元件140、150的源極144、154、汲極146、156是以不同的光罩製程進行製作的。然而,當機台的精密度不足或是製程上的對位誤差時,主動元件140、150的閘極142、152與源極144、154、汲極146、156之間會產生相對位移而使主動元件140、150的特性偏離原有的設計值。此時,由於閘極142、152分設於對應掃描線120a的兩側,當主動元件140、150的閘極142、152與汲極146、156產生相對位移時,畫素130a、130b中之主動元件140、150的閘極142、152與汲極146、 156的重疊面積變化皆不相同,若朝向畫素130b的方向偏移時,則位於掃描線120a一側之畫素130a的閘極-汲極寄生電容Cgd(parasitic capacitance,Cgd)變大,而位於掃描線120a另一側之畫素130b的閘極-汲極寄生電容Cgd則變小,導致畫素130a、130b中的閘極-汲極寄生電容Cgd不同。如此一來,由於上述之製程上的誤差所造成閘極-汲極寄生電容Cgd的差異性大,因此此畫素陣列100a在顯示過程中易產生顯示亮度不均勻的問題。 FIG. 1A is a schematic diagram of a conventional pixel array. Referring to FIG. 1, in a design of a pixel array 100a, two scan lines 120a are located between two adjacent columns of pixels 130a, 130b, wherein the active elements 140, 150 of the two pixels 130a, 130b The gates 142, 152 are respectively located on both sides of the scan line 120a. In the fabrication flow of the active components 140, 150 having the above structure, the gates 142, 152 of the active components 140, 150 and the sources 144, 154, the drains 146, 156 of the active components 140, 150 are different masks. The process is made. However, when the precision of the machine is insufficient or the alignment error on the process, the gates 142, 152 of the active elements 140, 150 and the sources 144, 154, the drains 146, 156 will be relatively displaced. The characteristics of the active components 140, 150 deviate from the original design values. At this time, since the gates 142 and 152 are respectively disposed on opposite sides of the corresponding scanning line 120a, when the gates 142 and 152 of the active elements 140 and 150 are relatively displaced with the gates 146 and 156, the pixels 130a and 130b are The gates 142, 152 and the drain 146 of the active elements 140, 150, The overlap area change of 156 is different. When the direction toward the pixel 130b is shifted, the gate-drain parasitic capacitance Cgd (Cgd) of the pixel 130a located on the scanning line 120a side becomes larger. The gate-drain parasitic capacitance Cgd of the pixel 130b located on the other side of the scanning line 120a becomes smaller, resulting in a difference in the gate-drain parasitic capacitance Cgd in the pixels 130a and 130b. As a result, the difference between the gate-drain parasitic capacitance Cgd caused by the error in the above process is large, and thus the pixel array 100a is liable to cause display brightness unevenness during display.

為了減少畫素間之閘極-汲極寄生電容Cgd的差異,美國專利第US Patent No.6,583,777號中提出一種畫素陣列結構。請參考圖1,畫素陣列100b具有多個不規則排列的畫素R、G、B以及分別與畫素R、G、B連接的掃描線110b與資料線120b。其中,掃描線110b沿著列方向直線延伸,而資料線120b延著行方向直線延伸且掃描線110b垂直相交。然而,由於畫素R、G、B呈現不規則排列,於顯示的過程中容易產生色彩表現上有明顯不足的現象。此外,由於每一畫素R、G、B中皆橫跨三條掃描線110b,因此此畫素陣列的設計會降低開口率,而使得其應用於顯示器時出現亮度不足、顯示品質較差的現象。 In order to reduce the difference between the gate-drain parasitic capacitance Cgd between the pixels, a pixel array structure is proposed in U.S. Patent No. 6,583,777. Referring to FIG. 1, the pixel array 100b has a plurality of irregularly arranged pixels R, G, B and scan lines 110b and data lines 120b connected to pixels R, G, and B, respectively. The scan line 110b extends straight along the column direction, and the data line 120b extends linearly in the row direction and the scan lines 110b intersect perpendicularly. However, since the pixels R, G, and B are irregularly arranged, it is easy to cause a phenomenon in which the color expression is significantly insufficient in the display process. In addition, since each of the pixels R, G, and B spans the three scanning lines 110b, the design of the pixel array reduces the aperture ratio, and the brightness is insufficient and the display quality is poor when applied to the display.

本發明提供一種畫素陣列,其可以減少閘極-汲極寄生電容的差異,因而有助於提高顯示品質。 The present invention provides a pixel array which can reduce the difference in gate-drain parasitic capacitance and thus contribute to improvement in display quality.

本發明提出一種畫素陣列,其包括多條掃描線、多條資料線以及多個畫素。掃描線沿著列方向曲折延伸。資料線沿著行方向延伸並與掃描線相交。畫素與掃描線以及資料線連接,排列於第n列中的每一畫素包括一第一子畫素以及一第二子畫素。第一子畫素包括一第一電晶體與一第一畫素電極,其中第一電晶體的一第一閘極與第(n+1)條掃描線連接,而第一電晶體的一 第一汲極與第一畫素電極連接。第二子畫素包括一第二電晶體與一第二畫素電極,其中第二電晶體的一第二閘極與第n條掃描線連接,第二電晶體的一第二汲極與第二畫素電極連接,第一電晶體的一第一源極以及第二電晶體的一第二源極連接至資料線中的同一條資料線。 The invention provides a pixel array comprising a plurality of scan lines, a plurality of data lines and a plurality of pixels. The scan lines extend in a zigzag direction along the column direction. The data line extends in the row direction and intersects the scan line. The pixels are connected to the scan lines and the data lines, and each pixel arranged in the nth column includes a first sub-pixel and a second sub-pixel. The first sub-pixel includes a first transistor and a first pixel electrode, wherein a first gate of the first transistor is connected to the (n+1)th scan line, and one of the first transistors The first drain is connected to the first pixel electrode. The second sub-pixel includes a second transistor and a second pixel electrode, wherein a second gate of the second transistor is connected to the nth scan line, and a second gate of the second transistor is The two pixel electrodes are connected, a first source of the first transistor and a second source of the second transistor are connected to the same data line in the data line.

在本發明之一實施例中,上述之第一電晶體與第二電晶體的佈局型態是以對應之掃描線為基準向上凸出的型態。 In an embodiment of the invention, the layout patterns of the first transistor and the second transistor are upwardly convex based on the corresponding scan lines.

在本發明之一實施例中,上述之第一電晶體與第二電晶體的佈局型態是以對應之掃描線為基準向下凸出的型態。 In an embodiment of the invention, the layout patterns of the first transistor and the second transistor are convex downwards based on the corresponding scan lines.

在本發明之一實施例中,上述在排列於同一列的畫素中,第一電晶體與第二電晶體位於該列畫素的同一側。 In an embodiment of the invention, in the pixels arranged in the same column, the first transistor and the second transistor are located on the same side of the column of pixels.

在本發明之一實施例中,上述之每一第一畫素電極或每一第二畫素電極的三個側邊被對應之上一條掃描線圍繞。 In an embodiment of the invention, the three sides of each of the first pixel electrodes or each of the second pixel electrodes are surrounded by a corresponding one of the scan lines.

在本發明之一實施例中,上述之每一掃描線在畫素陣列上呈一方波形。 In an embodiment of the invention, each of the scan lines has a waveform on the pixel array.

在本發明之一實施例中,上述之每一掃描線包括多個第一導線以及多個第二導線。第一導線沿著列方向延伸。第二導線沿著行方向延伸。第一導線與第二導線交替地連接。 In an embodiment of the invention, each of the scan lines includes a plurality of first wires and a plurality of second wires. The first wire extends in the column direction. The second wire extends in the row direction. The first wire and the second wire are alternately connected.

在本發明之一實施例中,上述之部分第二導線被第一畫素電極或第二畫素電極其中之一覆蓋。 In an embodiment of the invention, a portion of the second wire is covered by one of the first pixel electrode or the second pixel electrode.

在本發明之一實施例中,上述之第二導線位於同一畫素中的第一子畫素與第二子畫素之間以及相鄰兩畫素之間。 In an embodiment of the invention, the second wire is located between the first sub-pixel and the second sub-pixel in the same pixel and between two adjacent pixels.

在本發明之一實施例中,上述之每一第一導線的長度實質上大於等於其中一個畫素電極的寬度,而每一第二導線的長度實質上大於等於其中一個畫 素電極的長度。 In an embodiment of the invention, the length of each of the first wires is substantially greater than or equal to the width of one of the pixel electrodes, and the length of each of the second wires is substantially greater than or equal to one of the paintings. The length of the element electrode.

在本發明之一實施例中,上述之每一掃描線更包括多個第一分支以及多個第二分支。第一分支連接部分第一導線且沿著行方向延伸。第二分支連接部分第一導線且沿著行方向延伸。第一分支與第二分支實質上平行於第二導線。 In an embodiment of the invention, each of the scan lines further includes a plurality of first branches and a plurality of second branches. The first branch connects the portion of the first wire and extends in the row direction. The second branch connects the portion of the first wire and extends in the row direction. The first branch and the second branch are substantially parallel to the second wire.

在本發明之一實施例中,上述之位於同一畫素中的部份第一分支與部份第二分支被第二畫素電極覆蓋。 In an embodiment of the invention, the first partial branch and the partial second branch located in the same pixel are covered by the second pixel electrode.

在本發明之一實施例中,上述之與同一條資料線連接的畫素分佈於條資料線之兩側。 In an embodiment of the invention, the pixels connected to the same data line are distributed on both sides of the data line.

在本發明之一實施例中,上述之在排列於同一列的畫素中,位於偶數行的部分畫素與其中一條掃描線連接,而位於奇數行的部分畫素與另一條掃描線連接。 In an embodiment of the invention, in the pixels arranged in the same column, the partial pixels in the even rows are connected to one of the scan lines, and the partial pixels in the odd rows are connected to the other scan line.

在本發明之一實施例中,上述之在排列於第n列的每一畫素中,第一電晶體與第二電晶體分別具有一第一通道層以及一第二通道層,第一通道層位於第(n+1)條掃描線上方,第二通道層位於第n條掃描線上方。第一汲極自第一通道層沿著一第一方向與第一畫素電極連接,第二汲極自第二通道層沿著一第二方向與第二畫素電極連接,且第一方向與第二方向相同。 In an embodiment of the present invention, in each of the pixels arranged in the nth column, the first transistor and the second transistor respectively have a first channel layer and a second channel layer, and the first channel The layer is above the (n+1)th scan line and the second channel layer is above the nth scan line. The first drain is connected to the first pixel electrode from the first channel layer along a first direction, and the second drain is connected to the second pixel electrode from the second channel layer along a second direction, and the first direction Same as the second direction.

在本發明之一實施例中,上述之在排列於同一列的畫素中,第一與第二子畫素的中心點的連線趨近於同一條直線。 In an embodiment of the invention, in the pixels arranged in the same column, the lines connecting the center points of the first and second sub-pixels are close to the same line.

在本發明之一實施例中,上述之在每一畫素中,第一電晶體的形狀與第二電晶體的形狀為以資料線為基準呈鏡像的形式。 In an embodiment of the invention, in each pixel, the shape of the first transistor and the shape of the second transistor are in the form of a mirror image based on the data line.

在本發明之一實施例中,上述之第一子畫素更包括一第一電容電極,電性 連接第一畫素電極,且第一電容電極與資料線屬同一膜層並與上一條掃描線部分重疊,以構成一第一儲存電容。第二子畫素更包括一第二電容電極,電性連接第二畫素電極,且第二電容電極與資料線屬同一膜層並與上一條掃描線部分重疊,以構成一第二儲存電容。 In an embodiment of the invention, the first sub-pixel further includes a first capacitor electrode, and the electrical The first pixel electrode is connected, and the first capacitor electrode and the data line are in the same film layer and partially overlap with the previous scan line to form a first storage capacitor. The second sub-pixel further includes a second capacitor electrode electrically connected to the second pixel electrode, and the second capacitor electrode and the data line belong to the same film layer and partially overlap with the previous scan line to form a second storage capacitor. .

基於上述,本發明之畫素陣列將掃描線設計為曲折的佈局方式,並將與同一資料線連接的第一子畫素與第二子畫素皆配置於該條資料線的兩側。同時,將位於同一畫素中之第一電晶體的第一閘極與第(n+1)條掃描線連接,將第二電晶體的第二閘極與第n條掃描線連接。因此,本發明之畫素陣列的設計除了可以大幅減少資料線的佈局數量,以減少製造成本外,更有效提升開口率使畫面顯示亮度得到明顯的提升外,亦可提高顯示器的色彩表現能力。另外,由於電晶體之汲極往對應之畫素電極的延伸方向皆相同,因此於製作電晶體上膜層之間有對位偏差時,整體畫素中的閘極-汲極寄生電容(Cgd)的差異小。如此一來,當本發明之畫素陣列應用於顯示器時,有助於提高顯示器的顯示均勻性,意即可以避免產生閃爍(flicker)而造成亮度不均勻的問題。 Based on the above, the pixel array of the present invention designs the scan lines into a zigzag layout manner, and arranges the first sub-pixel and the second sub-pixel connected to the same data line on both sides of the data line. At the same time, the first gate of the first transistor in the same pixel is connected to the (n+1)th scan line, and the second gate of the second transistor is connected to the nth scan line. Therefore, the design of the pixel array of the present invention can greatly reduce the number of layouts of the data lines, thereby reducing the manufacturing cost, and effectively improving the aperture ratio to significantly improve the brightness of the screen display, and can also improve the color performance of the display. In addition, since the drain of the transistor is the same in the direction in which the corresponding pixel electrodes extend, the gate-drain parasitic capacitance (Cgd) in the overall pixel is obtained when there is a misalignment between the layers on the transistor. The difference is small. In this way, when the pixel array of the present invention is applied to a display, it helps to improve the display uniformity of the display, thereby avoiding the problem of unevenness caused by flicker.

為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the present invention will be more apparent from the following description.

100a、100b‧‧‧畫素陣列 100a, 100b‧‧‧ pixel array

110a、110b‧‧‧掃描線 110a, 110b‧‧‧ scan lines

120a、120b‧‧‧資料線 120a, 120b‧‧‧ data line

130a、130b‧‧‧畫素 130a, 130b‧‧ ‧ pixels

140、150‧‧‧主動元件 140, 150‧‧‧ active components

142、152‧‧‧閘極 142, 152‧‧‧ gate

144、154‧‧‧源極 144, 154‧‧‧ source

146、156‧‧‧汲極 146, 156‧‧ ‧ bungee

200a、200b、200c、200d‧‧‧畫素陣列 200a, 200b, 200c, 200d‧‧‧ pixel array

210‧‧‧掃描線 210‧‧‧ scan line

210a‧‧‧第一掃描線 210a‧‧‧First scan line

210b‧‧‧第二掃描線 210b‧‧‧second scan line

212‧‧‧第一導線 212‧‧‧First wire

214‧‧‧第二導線 214‧‧‧second wire

216‧‧‧第一分支 First branch of 216‧‧

218‧‧‧第二分支 218‧‧‧Second branch

220、220a、220b‧‧‧資料線 220, 220a, 220b‧‧‧ data line

230、230a‧‧‧畫素 230, 230a‧‧ ‧ pixels

240‧‧‧介電層 240‧‧‧ dielectric layer

242‧‧‧第一接觸窗 242‧‧‧First contact window

244‧‧‧第二接觸窗 244‧‧‧second contact window

310、310’、310”、310'''‧‧‧第一子畫素 310, 310', 310", 310'''‧‧‧ first sub-pixel

312、312’、312”‧‧‧第一電晶體 312, 312', 312" ‧ ‧ first transistor

312a、312a’、312a”‧‧‧第一通道層 312a, 312a', 312a" ‧ ‧ first channel layer

312b、312b’、312b”‧‧‧第一閘極 312b, 312b’, 312b”‧‧‧ first gate

312c、312c’、312c”‧‧‧第一汲極 312c, 312c', 312c" ‧ ‧ first bungee

312d、312d’、312d”‧‧‧第一源極 312d, 312d', 312d" ‧ ‧ first source

314、314’、314”、314'''‧‧‧第一畫素電極 314, 314', 314", 314'''‧‧‧ first pixel electrodes

316‧‧‧第一電容電極 316‧‧‧First Capacitance Electrode

318‧‧‧閘絕緣層 318‧‧‧ brake insulation

320、320’、320”、320'''‧‧‧第二子畫素 320, 320', 320", 320'''‧‧‧ second sub-pixel

322、322’、322”‧‧‧第二電晶體 322, 322', 322" ‧ ‧ second transistor

322a、322a’、322a”‧‧‧第二通道層 322a, 322a’, 322a”‧‧‧ second channel layer

322b、322b’、322b”‧‧‧第二閘極 322b, 322b’, 322b”‧‧‧second gate

322c、322c’、322b”‧‧‧第二汲極 322c, 322c’, 322b” ‧ ‧ second bungee

322d、322d’、322d”‧‧‧第二源極 322d, 322d’, 322d” ‧ ‧ second source

324、324’、324”、324'''‧‧‧第二畫素電極 324, 324', 324", 324'''‧‧‧ second pixel electrodes

326‧‧‧第一電容電極 326‧‧‧First Capacitance Electrode

C1‧‧‧第一儲存電容 C1‧‧‧First storage capacitor

C2‧‧‧第二儲存電容 C2‧‧‧Second storage capacitor

D‧‧‧間隙 D‧‧‧ gap

D1‧‧‧第一方向 D1‧‧‧ first direction

D2‧‧‧第二方向 D2‧‧‧ second direction

L1‧‧‧列方向 L1‧‧‧ direction

R、G、B‧‧‧畫素 R, G, B‧‧ ‧ pixels

T1、T2‧‧‧連線 T1, T2‧‧‧ connection

S‧‧‧偏移程度 S‧‧‧degree of offset

第1A圖為習知之一種畫素陣列的示意圖。 Figure 1A is a schematic diagram of a conventional pixel array.

第1B圖為知另一種畫素陣列的示意圖。 Figure 1B is a schematic diagram showing another pixel array.

第2A圖為本發明之一實施例之一種畫素陣列的示意圖。 2A is a schematic diagram of a pixel array according to an embodiment of the present invention.

第2B圖為圖2A之畫素陣列之掃描線的示意圖。 Figure 2B is a schematic illustration of the scan lines of the pixel array of Figure 2A.

第2C圖為本發明之另一實施例之一種畫素陣列的示意圖。 2C is a schematic diagram of a pixel array according to another embodiment of the present invention.

第2D圖為本發明之又一實施例之一種畫素陣列的示意圖。 2D is a schematic diagram of a pixel array according to still another embodiment of the present invention.

第3A圖為本發明之一實施例之一種畫素陣列的示意圖。 3A is a schematic diagram of a pixel array according to an embodiment of the present invention.

第3B圖為沿圖3A之線A-A’以及線B-B’的剖面示意圖。 Fig. 3B is a schematic cross-sectional view taken along line A-A' and line B-B' of Fig. 3A.

第3C圖為本發明之另一實施例之一種畫素陣列的示意圖。 FIG. 3C is a schematic diagram of a pixel array according to another embodiment of the present invention.

圖2A為本發明之一實施例之一種畫素陣列的示意圖。圖2B繪示為圖2A之畫素陣列之掃描線的示意圖。請同時參考圖2A與圖2B,在本實施例中,畫素陣列200a包括多條掃描線210、多條資料線220以及多個畫素230。為方便說明,令畫素陣列200a上具有一列方向L1以及一行方向L2,且列方向L1實質上正交於行方向L2。 2A is a schematic diagram of a pixel array according to an embodiment of the present invention. 2B is a schematic diagram of a scan line of the pixel array of FIG. 2A. Referring to FIG. 2A and FIG. 2B simultaneously, in the embodiment, the pixel array 200a includes a plurality of scan lines 210, a plurality of data lines 220, and a plurality of pixels 230. For convenience of explanation, the pixel array 200a has a column direction L1 and a row direction L2, and the column direction L1 is substantially orthogonal to the row direction L2.

如圖2B所示,本實施例之掃描線210大體上是沿著列方向L1曲折延伸,且為方便說明,下文將以掃描線210是由多條第一掃描線210a與多條第二掃描線210b所構成為例進行說明。換言之,掃描線210在巨觀上而言是彼此平行地往列方向L1延伸,而在微觀上而言,掃描線210是大體上呈一方波形在基板上蜿蜒延伸。 As shown in FIG. 2B, the scan line 210 of the present embodiment extends substantially in a zigzag manner along the column direction L1. For convenience of description, the scan line 210 will be followed by a plurality of first scan lines 210a and a plurality of second scans. The configuration of the line 210b will be described as an example. In other words, the scanning lines 210 are vertically parallel to each other in the column direction L1, and microscopically, the scanning lines 210 are substantially one-sided in shape and extend on the substrate.

更具體而言,在本實施例中,每一第一掃描線210a(或第二掃描線210b)包括多個第一導線212、多個第二導線214、多個第一分支216以及多個第二分支218。第一導線212實質上沿著列方向L1延伸,而第二導線214實質上沿著行方向L2延伸。特別是,第一導線212與第二導線214交替地連接,使第一掃描線210a實質上呈方波形。當然,於其他實施例中,第一掃描線210a亦可呈現鉅齒形狀或呈S形的形狀。第一分支216連接部分第一導線212且實質上沿著行方向L2延伸。第二分支218連接部分第一導線212且沿著列方向L2延伸。其中,第一分支216與第二分支218實質上平行於第二導 線214,且第一掃描線210a於鄰近第二掃描線210b的每一段第一導線212上連接一個第一分支216與一個第二分支218,以使第一掃描線210a的第一分支216與第二掃描線210b的第二導線214實質上位於資料線的兩側。藉此,各子畫素鄰近資料線可藉由第一分支216與第二分支218進一步達到避免側向漏光的效果。 More specifically, in this embodiment, each of the first scan lines 210a (or the second scan lines 210b) includes a plurality of first wires 212, a plurality of second wires 214, a plurality of first branches 216, and a plurality of Second branch 218. The first wire 212 extends substantially along the column direction L1, and the second wire 214 extends substantially along the row direction L2. In particular, the first wire 212 and the second wire 214 are alternately connected such that the first scan line 210a has a substantially square waveform. Of course, in other embodiments, the first scan line 210a may also have a giant tooth shape or an S shape. The first branch 216 connects a portion of the first wire 212 and extends substantially along the row direction L2. The second branch 218 connects a portion of the first wire 212 and extends along the column direction L2. Wherein the first branch 216 and the second branch 218 are substantially parallel to the second guide Line 214, and the first scan line 210a connects a first branch 216 and a second branch 218 to each of the first wires 212 adjacent to the second scan line 210b, such that the first branch 216 of the first scan line 210a is The second wires 214 of the second scan line 210b are substantially located on both sides of the data line. Thereby, each sub-pixel adjacent data line can further achieve the effect of avoiding lateral light leakage by the first branch 216 and the second branch 218.

請再參考圖2A與圖2B,本實施例中之資料線220實質上沿著行方向L2延伸並與第一掃描線210a以及第二掃描線210b相交以定義出多個畫素區域。在本實施例中,資料線220與第一掃描線210a及第二掃描線210b相交(intersect)但並未電性連接。畫素陣列200a中的各畫素230與對應的第一掃描線210a、第二掃描線210b以及資料線220連接,且排列於第n列中的每一畫素230包括一第一子畫素310以及一第二子畫素320。第一子畫素310包括一第一電晶體312與一第一畫素電極314,其中第一電晶體312具有一第一通道層312a、一第一閘極312b、一第一汲極312c以及一第一源極312d。第一通道層312a位於第(n+1)條掃描線210(意即第二掃描線210b)上方,而第一閘極312b與第(n+1)條掃描線210(意即第二掃描線210b)連接。第一汲極312c與第一畫素電極314連接,且第一汲極312c自第一通道層312a沿著一第一方向D1與第一畫素電極314連接,意即第一畫素電極314對應第(n+1)條掃描線210(即第二掃描線210b)。第一畫素電極314的三個側邊被對應的上一條掃描線210(即第一掃描線210a)圍繞。 Referring to FIG. 2A and FIG. 2B again, the data line 220 in this embodiment extends substantially along the row direction L2 and intersects the first scan line 210a and the second scan line 210b to define a plurality of pixel regions. In this embodiment, the data line 220 intersects the first scan line 210a and the second scan line 210b but is not electrically connected. Each pixel 230 in the pixel array 200a is connected to the corresponding first scan line 210a, second scan line 210b, and data line 220, and each pixel 230 arranged in the nth column includes a first sub-pixel. 310 and a second sub-pixel 320. The first sub-pixel 310 includes a first transistor 312 and a first pixel electrode 314, wherein the first transistor 312 has a first channel layer 312a, a first gate 312b, a first drain 312c, and A first source 312d. The first channel layer 312a is located above the (n+1)th scan line 210 (ie, the second scan line 210b), and the first gate 312b and the (n+1)th scan line 210 (ie, the second scan) Line 210b) is connected. The first drain 312c is connected to the first pixel electrode 314, and the first drain 312c is connected to the first pixel electrode 314 from the first channel layer 312a along a first direction D1, that is, the first pixel electrode 314. Corresponding to the (n+1)th scan line 210 (ie, the second scan line 210b). The three sides of the first pixel electrode 314 are surrounded by the corresponding previous scanning line 210 (i.e., the first scanning line 210a).

另一方面,第二子畫素320包括一第二電晶體322與一第二畫素電極324,其中第二電晶體322具有一第二通道層322a、一第二閘極322b、一第二汲極322c以及一第二源極322d。第二通道層322a位於第n條掃描線210(意即第一掃描線210a)上方,而第二閘極322b與第n條掃描線210(意即第一掃描線210a)連接。第二汲極322c與第二畫素電極324連接,且第二汲極 322c自第二通道層322a沿著一第二方向D2與第二畫素電極324連接,意即第二畫素電極324對應第n條掃描線210(即第一掃描線210a)。特別的是,第一方向D1與第二方向D2相同。意即,第一方向D1與第二方向D2實質上平行。第二畫素電極324的三個側邊被對應之上一條掃描線(未繪示)圍繞。 On the other hand, the second sub-pixel 320 includes a second transistor 322 and a second pixel electrode 324. The second transistor 322 has a second channel layer 322a, a second gate 322b, and a second layer. The drain 322c and a second source 322d. The second channel layer 322a is located above the nth scan line 210 (that is, the first scan line 210a), and the second gate 322b is connected to the nth scan line 210 (that is, the first scan line 210a). The second drain 322c is connected to the second pixel electrode 324, and the second drain 322c is connected to the second pixel electrode 324 from the second channel layer 322a along a second direction D2, that is, the second pixel electrode 324 corresponds to the nth scan line 210 (ie, the first scan line 210a). In particular, the first direction D1 is the same as the second direction D2. That is, the first direction D1 is substantially parallel to the second direction D2. The three sides of the second pixel electrode 324 are surrounded by a corresponding one of the scanning lines (not shown).

具體來說,第一電晶體312與第二電晶體322的佈局型態是以分別對應第二掃描線210b與第一掃描線210a的基準向上凸出的的型態,因此在本實施例中,第n列的畫素是位於第n條掃描線210所圍繞的區域內,位於第n列的第一子畫素310與第二子畫素320中,第一閘極312b與第(n+1)條掃描線210(意即第二掃描線210b)連接,而第二閘極322b與第n條掃描線210(意即第一掃描線210a)連接,換言之,與第一閘極312b相連接的掃描線210為與第二閘極322b相連接的掃描線210的下一條,且由於n為任意的正整數,在此領域的技術人員亦可謂第一閘極312b與第n條掃描線210連接,而第二閘極322b與第(n-1)條掃描線210連接,本發明並不以此限定。當然,於其他實施例中,請參考圖2C,畫素陣列200b,第一電晶體312’與第二電晶體322’的佈局型態亦可是以分別對應第二掃描線210b與第一掃描線210a的基準向下凸出的型態。也就是說,第n列的畫素是位於第n條掃描線210所圍繞的區域內,在第n列畫素中,第一閘極312b’會與第n條掃描線210連接,而第二閘極322b’會與第(n-1)條掃描線210連接,換言之,與第一閘極312b’相連接的掃描線210同樣為與第二閘極322b’相連接的掃描線210的下一條,且由於n為任意的正整數,在此領域的技術人員亦可謂第一閘極312b與第n條掃描線210連接,而第二閘極322b與第(n+1)條掃描線210連接,本發明並不以此限定。此外,在此領域的技術人員皆知本發明所提到的方向用語,例如「上」、「下」、「前」、「後」、「左」、「右」等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明,而非用 來限制本發明。換言之,若將圖2A之圖示旋轉180度,亦可得到第一電晶體312與第二電晶體322的佈局型態是以分別對應第二掃描線210b與第一掃描線210a的基準向下凸出的型態,請參考圖2D。再者,在本實例中,第一電晶體312的第一源極312d以及第二電晶體322的第二源極322d連接至資料線220中的同一條資料線220a。 Specifically, the layout patterns of the first transistor 312 and the second transistor 322 are in a form that protrudes upward corresponding to the reference of the second scan line 210b and the first scan line 210a, respectively, and thus in this embodiment The pixel of the nth column is located in the area surrounded by the nth scan line 210, and is located in the first sub-pixel 310 and the second sub-pixel 320 of the nth column, and the first gate 312b and the (n) +1) scanning lines 210 (ie, second scanning lines 210b) are connected, and second gate 322b is connected to the nth scanning line 210 (that is, the first scanning line 210a), in other words, to the first gate 312b. The connected scan line 210 is the next one of the scan lines 210 connected to the second gate 322b, and since n is an arbitrary positive integer, those skilled in the art can also refer to the first gate 312b and the nth scan. The line 210 is connected, and the second gate 322b is connected to the (n-1)th scanning line 210, which is not limited by the present invention. For example, in other embodiments, referring to FIG. 2C, the pixel array 200b, the layout patterns of the first transistor 312' and the second transistor 322' may correspond to the second scan line 210b and the first scan line, respectively. The pattern of the base of 210a is convex downward. That is, the pixel of the nth column is located in the area surrounded by the nth scan line 210. In the nth column of pixels, the first gate 312b' is connected to the nth scan line 210, and The second gate 322b' is connected to the (n-1)th scan line 210. In other words, the scan line 210 connected to the first gate 312b' is also the scan line 210 connected to the second gate 322b'. The next one, and since n is an arbitrary positive integer, those skilled in the art can also say that the first gate 312b is connected to the nth scan line 210, and the second gate 322b and the (n+1)th scan line are connected. 210 is connected, and the present invention is not limited thereto. In addition, those skilled in the art are aware of the directional terms mentioned in the present invention, such as "upper", "lower", "front", "back", "left", "right", etc., only refer to additional drawings. Direction. Therefore, the direction used is used for illustration, not for To limit the invention. In other words, if the illustration of FIG. 2A is rotated by 180 degrees, the layout patterns of the first transistor 312 and the second transistor 322 are also obtained to correspond to the reference of the second scan line 210b and the first scan line 210a, respectively. For the convex type, please refer to Figure 2D. Moreover, in the present example, the first source 312d of the first transistor 312 and the second source 322d of the second transistor 322 are connected to the same data line 220a in the data line 220.

具體而言,如圖2A所示,第二導線214是位於同一畫素230中的第一子畫素310與第二子畫素320之間以及相鄰兩畫素230之間。其中,每一第一導線212的長度實質上大於等於第一畫素電極314(或第二畫素電極324)的寬度,而每一第二導線214的長度實質上大於等於第一畫素電極314(或第二畫素電極324)的長度。此外,本實施例之資料線220a實質上與第一掃描線210a以及第二掃描線210b相交,其中與同一條資料線220a連接的第一子畫素310與第二子畫素320分佈於該資料線220a之兩側,且第一子畫素310與第二子畫素320實質上可算是位於同一列中。在本實例排列於同一列的畫素230中,位於偶數行的部分畫素230與其中一條掃描線210連接,而位於奇數行的部分畫素230與另一條掃描線210連接。也就是說,位於偶數行的第二子畫素320與第一掃描線210a電性連接,而位於奇數行的第一子畫素310與第二掃描線210b電性連接。 Specifically, as shown in FIG. 2A, the second wire 214 is located between the first sub-pixel 310 and the second sub-pixel 320 in the same pixel 230 and between the adjacent two pixels 230. The length of each of the first wires 212 is substantially greater than or equal to the width of the first pixel electrode 314 (or the second pixel electrode 324), and the length of each of the second wires 214 is substantially greater than or equal to the first pixel electrode. The length of 314 (or second pixel electrode 324). In addition, the data line 220a of the embodiment substantially intersects the first scan line 210a and the second scan line 210b, wherein the first sub-pixel 310 and the second sub-pixel 320 connected to the same data line 220a are distributed in the The two sides of the data line 220a, and the first sub-pixel 310 and the second sub-pixel 320 are substantially in the same column. In the pixel 230 in which the present example is arranged in the same column, the partial pixels 230 located in the even rows are connected to one of the scanning lines 210, and the partial pixels 230 located in the odd rows are connected to the other scanning line 210. That is, the second sub-pixel 320 located in the even row is electrically connected to the first scan line 210a, and the first sub-pixel 310 located in the odd row is electrically connected to the second scan line 210b.

此外,第一電晶體312的第一閘極312b實質上與第二條掃描線210b連接,而第二電晶體322的第二閘極322b實質上與第一條掃描線210a連接。在排列於同一列的畫素230中,第一電晶體312與第二電晶體322位於列畫素230的同一側,且在每一畫素230中,第一電晶體312是第二電晶體322水平翻轉180度的形式。意即,第一電晶體312的形狀與第二電晶體322的形狀以資料線220a為基準線呈鏡像且稍微錯位的形式。換言之,上述所述之第一電晶體312與第二電晶體322的佈局實質上相同,即第一通道層312a與第二 通道層322a的形狀、第一汲極312c與第二汲極322c往對應第一畫素電極314與第二畫素電極324的延伸方向以及第一源極312d與第二源極322d的形狀等皆相同。另外,第一畫素電極314與第二畫素電極324覆蓋部分第二導線214,其中第二畫素電極324亦覆蓋位於同一畫素230中的部分第一分支216與部分第二分支218。 In addition, the first gate 312b of the first transistor 312 is substantially connected to the second scan line 210b, and the second gate 322b of the second transistor 322 is substantially connected to the first scan line 210a. In the pixels 230 arranged in the same column, the first transistor 312 and the second transistor 322 are located on the same side of the column pixel 230, and in each pixel 230, the first transistor 312 is the second transistor. The 322 is flipped horizontally by 180 degrees. That is, the shape of the first transistor 312 and the shape of the second transistor 322 are mirrored and slightly misaligned with the data line 220a as a reference line. In other words, the layout of the first transistor 312 and the second transistor 322 described above are substantially the same, that is, the first channel layer 312a and the second layer. The shape of the channel layer 322a, the first drain 312c and the second drain 322c correspond to the extending direction of the first pixel electrode 314 and the second pixel electrode 324, and the shapes of the first source 312d and the second source 322d. All the same. In addition, the first pixel electrode 314 and the second pixel electrode 324 cover a portion of the second wire 214, wherein the second pixel electrode 324 also covers a portion of the first branch 216 and a portion of the second branch 218 located in the same pixel 230.

另外,在本實施例中,在排列於同一列的畫素230中,第一子畫素310與第二子畫素320的中心點的連線趨近於同一條直線。具體來說,在第一子畫素310與第二子畫素320所構成之畫素230中,位於奇數行的第一子畫素310與位於偶數行的第二子畫素320並非完全對齊。第一子畫素310的中心點的連線為T1,而第二子畫素320的中心點的連線為T2,其中連線T1與連線T2的偏移程度S為第一子畫素310或第二子畫素320長度的3%至50%。由於偏移程度S不大,因此第一子畫素310與第二子畫素320可算是位於同一列中。 Further, in the present embodiment, in the pixels 230 arranged in the same column, the line connecting the center points of the first sub-pixel 310 and the second sub-pixel 320 approaches the same straight line. Specifically, in the pixel 230 formed by the first sub-pixel 310 and the second sub-pixel 320, the first sub-pixel 310 located in the odd-numbered row and the second sub-pixel 320 located in the even-numbered line are not completely aligned . The line connecting the center point of the first sub-pixel 310 is T1, and the line connecting the center point of the second sub-pixel 320 is T2, wherein the offset degree S of the connection line T1 and the connection line T2 is the first sub-pixel. 310 or the second sub-pixel 320 is 3% to 50% of the length. Since the degree of offset S is not large, the first sub-pixel 310 and the second sub-pixel 320 can be counted in the same column.

值得注意的是,在本實施例中,由於第一汲極312c往對應第一畫素電極314的延伸方向與第二汲極322c往對應第二畫素電極324的延伸方向相同。因此,即使於製作電晶體時不同膜層之間發生對位偏差或是因機台精度的公差而產生些許偏移時,閘極-汲極寄生電容(Cgd)的變化可較為一致,此處所謂變化較為一致意指畫素陣列200a上的每一畫素230的閘極-汲極寄生電容(Cgd)會同時變大或同時變小。如此一來,相鄰兩畫素230之間的亮度差異較小,且當畫素陣列200a應用於顯示器(未繪示)時有助於提高顯示器的顯示均勻性,即可以避免產生閃爍(flicker)而造成亮度不均勻的問題。 It should be noted that, in this embodiment, the extending direction of the first drain electrode 312c and the second drain electrode 322c are the same as the extending direction of the second pixel electrode 324. Therefore, even when a misalignment occurs between different layers when making a transistor or a slight offset due to the tolerance of the precision of the machine, the variation of the gate-drain parasitic capacitance (Cgd) can be more uniform, here The more consistent variation means that the gate-drain parasitic capacitance (Cgd) of each pixel 230 on the pixel array 200a will become larger or smaller at the same time. In this way, the difference in brightness between adjacent two pixels 230 is small, and when the pixel array 200a is applied to a display (not shown), the display uniformity of the display is improved, thereby avoiding flicker (flicker). ) causes a problem of uneven brightness.

此外,由於本實施例之畫素陣列200a將掃描線210設計為曲折的佈局方式,並將與同一資料線220a連接的第一子畫素310與第二子畫素320皆配置於該條資料線220a的兩側。同時,將位於同一畫素230中之第一電晶體312的 第一閘極312b與第二掃描線210b連接,將第二電晶體322的第二閘極322b與第一掃描線210a連接。此設計除了可以大幅減少資料線220的佈局數量外,亦可有效提升開口率,以使畫面顯示亮度得到明顯的提升。另外,本實施例之畫素230基本上可算是位於同一列上,且由第一子畫素310與第二子畫素320所組成之每一畫素230基本上呈現矩形,因此相較於習知之畫素陣列100而言,本實施例可有效提升畫面的色彩表現能力。 In addition, since the pixel array 200a of the present embodiment designs the scan line 210 in a zigzag layout manner, the first sub-pixel 310 and the second sub-pixel 320 connected to the same data line 220a are disposed in the data. Both sides of line 220a. At the same time, the first transistor 312 in the same pixel 230 will be located. The first gate 312b is connected to the second scan line 210b, and the second gate 322b of the second transistor 322 is connected to the first scan line 210a. In addition to greatly reducing the number of layouts of the data lines 220, this design can also effectively increase the aperture ratio, so that the brightness of the screen display is significantly improved. In addition, the pixels 230 of the embodiment are basically located on the same column, and each of the pixels 230 composed of the first sub-pixel 310 and the second sub-pixel 320 is substantially rectangular, and thus is compared with In the conventional pixel array 100, the embodiment can effectively improve the color performance of the picture.

圖3A為本發明之一實施例之一種畫素陣列的示意圖。圖3B為沿圖3A之線A-A’以及線B-B’的剖面示意圖。請同時參考圖3A與圖3B,本實施例之畫素陣列200c與上述之畫素陣列200a相似。惟,本實施例之畫素陣列200c中,縮減相鄰畫素之間的間隙D,如此一來,在相同的佈局空間中,由於相鄰畫素間的間隙D變小,因此畫素的面積即可增大,進而增加畫素的開口率。此外,在本實施例高開口率的畫素陣列200c中,具有高覆蓋特性的介電層240更覆蓋於第一電晶體312”與第二電晶體322”上,且介電層240亦可視為一平坦層(overcoating),因此第一畫素電極314”與第二畫素電極324”的佈局可進一步延伸至對應掃描線210的上方,以進一步提高畫素的開口率。值得注意的是,在本實施例中,第一畫素電極314”與第二畫素電極324”僅繪示覆蓋部份第n條掃描線以及第(n+1)條掃描線。但,於其他實施例中,請參考圖3C,第一畫素電極314'''與第二畫素電極324'''亦可覆蓋整個第一子畫素310'''與第二子畫素320'''的周圍。 3A is a schematic diagram of a pixel array according to an embodiment of the present invention. Fig. 3B is a schematic cross-sectional view taken along line A-A' and line B-B' of Fig. 3A. Referring to FIG. 3A and FIG. 3B simultaneously, the pixel array 200c of the present embodiment is similar to the above-described pixel array 200a. However, in the pixel array 200c of the present embodiment, the gap D between adjacent pixels is reduced, and thus, in the same layout space, since the gap D between adjacent pixels becomes smaller, the pixel is The area can be increased to increase the aperture ratio of the pixels. In addition, in the pixel array 200c having a high aperture ratio of the present embodiment, the dielectric layer 240 having high coverage characteristics covers the first transistor 312" and the second transistor 322", and the dielectric layer 240 is also visible. As an overcoating, the layout of the first pixel electrode 314" and the second pixel electrode 324" may further extend above the corresponding scan line 210 to further increase the aperture ratio of the pixel. It should be noted that, in this embodiment, the first pixel electrode 314" and the second pixel electrode 324" only show a portion of the nth scan line and the (n+1)th scan line. However, in other embodiments, referring to FIG. 3C, the first pixel electrode 314 ′′′ and the second pixel electrode 324 ′′′ may also cover the entire first sub-pixel 310′′′ and the second sub-picture. Around the 320'''.

為了進一步增進第一子畫素310”與第二子畫素320”的儲存電容,第一子畫素310”更包括一第一電容電極316,而第二子畫素320”更包括一第二電容電極326。詳細來說,第一電容電極316電性連接第一畫素電極314”,且第一電容電極316與上一條掃描線210(意即第n條掃描線 210)部分重疊,以構成一第一儲存電容C1,即第一儲存電容C1的下電極為部分上一條掃描線210,其上電極為第一電容電極316,且上電極與資料線220屬同一膜層。第二電容電極326電性連接第二畫素電極324”,且第二電容電極326與上一條掃描線210(意即第(n-1)掃描線210)部分重疊,以構成一第二儲存電容C2,即第二儲存電容326的下電極為部分上一條掃描線210,其上電極為第二電容電極326,且上電極與資料線220屬同一膜層。詳言之,請繼續參照圖3A與圖3B,在第n列中之第一子畫素310”中,第一畫素電極314”透過介電層240的第一接觸窗242而與第一電晶體312”電性連接,並透過介電層240的第二接觸窗244而與第一電容電極316電性連接。在實際的運作機制上,施加一開啟電壓位準於第(n+1)條掃描線210(意即第二掃描線210b)以開啟第一電晶體312”,接著自資料線220a輸入一資料電壓,此資料電壓經由開啟的第一電晶體312”以及介電層240的第一接觸窗242傳遞至第一畫素電極314”上。並且,具有該資料電壓的第一畫素電極314”透過介電層240的第二接觸窗244而將此資料電壓傳遞至第一電容電極316,使得第一畫素電極314”與第一電容電極316等電位,因此第(n+1)條掃描線210(意即第二掃描線210b)、第一電容電極316以及位於第(n+1)條掃描線210(意即第二掃描線210b)與第一電容電極316之間的閘絕緣層318共同構成第一子畫素310”的第一儲存電容C1,而第一儲存電容C1用以在第一電晶體312”關閉的其間穩定第一畫素電極314”的資料電壓,提升顯示品質。如此一來,第一子畫素310”可兼具高開口率以及高儲存電容值。同理,第二子畫素320’’之運作機制與第一子畫素310”類似,不再贅述。 In order to further enhance the storage capacitance of the first sub-pixel 310" and the second sub-pixel 320", the first sub-pixel 310" further includes a first capacitor electrode 316, and the second sub-pixel 320" further includes a first Two capacitor electrodes 326. In detail, the first capacitor electrode 316 is electrically connected to the first pixel electrode 314 ′′, and the first capacitor electrode 316 and the previous scan line 210 (ie, the nth scan line) 210) partially overlapping to form a first storage capacitor C1, that is, the lower electrode of the first storage capacitor C1 is a portion of the previous scan line 210, the upper electrode is the first capacitor electrode 316, and the upper electrode is the same as the data line 220. Membrane layer. The second capacitor electrode 326 is electrically connected to the second pixel electrode 324 ′′, and the second capacitor electrode 326 is partially overlapped with the previous scan line 210 (ie, the (n-1)th scan line 210 ) to form a second storage. The capacitor C2, that is, the lower electrode of the second storage capacitor 326 is a portion of the upper scan line 210, the upper electrode of which is the second capacitor electrode 326, and the upper electrode and the data line 220 belong to the same film layer. In detail, please refer to the figure. 3A and FIG. 3B, in the first sub-pixel 310" in the nth column, the first pixel electrode 314" is electrically connected to the first transistor 312" through the first contact window 242 of the dielectric layer 240. The first capacitor electrode 316 is electrically connected to the second contact window 244 of the dielectric layer 240. In an actual operating mechanism, an open voltage level is applied to the (n+1)th scan line 210 (ie, the second scan line 210b) to turn on the first transistor 312", and then a data is input from the data line 220a. The voltage, the data voltage is transferred to the first pixel electrode 314" via the first transistor 312" that is turned on and the first contact window 242 of the dielectric layer 240. And, the first pixel electrode 314 having the data voltage The data voltage is transmitted to the first capacitor electrode 316 through the second contact window 244 of the dielectric layer 240 such that the first pixel electrode 314" is equipotential to the first capacitor electrode 316, and thus the (n+1)th scan a line 210 (ie, a second scan line 210b), a first capacitor electrode 316, and a gate insulating layer between the (n+1)th scan line 210 (ie, the second scan line 210b) and the first capacitor electrode 316 318 together constitute a first storage capacitor C1 of the first sub-pixel 310", and the first storage capacitor C1 is used to stabilize the data voltage of the first pixel electrode 314" during the closing of the first transistor 312" to improve display quality. . In this way, the first sub-pixel 310" can have both a high aperture ratio and a high storage capacitance value. Similarly, the operation mechanism of the second sub-pixel 320'' is similar to that of the first sub-pixel 310", and will not be described again. .

綜上所述,本發明之畫素陣列將掃描線設計為曲折的佈局方式,並將與同一資料線連接的第一子畫素與第二子畫素皆配置於該條資料線的兩側。同時,將位於同一畫素中之第一電晶體的第一閘極與第(n+1)條掃描線連接, 將第二電晶體的第二閘極與第n條掃描線連接。因此,本發明之畫素陣列的設計除了可以大幅減少資料線的佈局數量,以有效提升開口率使畫面顯示亮度得到明顯的提升外,亦可提高顯示器的色彩表現能力。另外,由於電晶體之汲極往對應之畫速電極的延伸方向皆相同,因此當於製作電晶體上膜層之間有對位偏差時,整體畫素中的閘極-汲極寄生電容(Cgd)的差異小。如此一來,本發明之畫素陣列應用於顯示器時有助於提高顯示器的顯示均勻性,意即可以避免產生閃爍(flicker)而造成亮度不均勻的問題。 In summary, the pixel array of the present invention designs the scan line into a zigzag layout manner, and arranges the first sub-pixel and the second sub-pixel connected to the same data line on both sides of the data line. . At the same time, the first gate of the first transistor in the same pixel is connected to the (n+1)th scan line. The second gate of the second transistor is connected to the nth scan line. Therefore, the design of the pixel array of the present invention can greatly reduce the number of layouts of the data lines, thereby effectively increasing the aperture ratio, thereby significantly improving the brightness of the screen display, and improving the color performance of the display. In addition, since the drain of the transistor is the same in the extending direction of the corresponding drawing electrode, the gate-drain parasitic capacitance in the overall pixel is obtained when there is a registration deviation between the layers on the transistor. The difference in Cgd) is small. In this way, when the pixel array of the present invention is applied to a display, it helps to improve the display uniformity of the display, thereby avoiding the problem of unevenness caused by flicker.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

200a‧‧‧畫素陣列 200a‧‧‧ pixel array

210‧‧‧掃描線 210‧‧‧ scan line

210a‧‧‧第一掃描線 210a‧‧‧First scan line

210b‧‧‧第二掃描線 210b‧‧‧second scan line

220‧‧‧資料線 220‧‧‧Information line

230‧‧‧畫素 230‧‧‧ pixels

310‧‧‧第一子畫素 310‧‧‧The first sub-pixel

312‧‧‧第一電晶體 312‧‧‧First transistor

312a‧‧‧第一通道層 312a‧‧‧first channel layer

312b‧‧‧第一閘極 312b‧‧‧first gate

312c‧‧‧第一汲極 312c‧‧‧First bungee

312d‧‧‧第一源極 312d‧‧‧first source

314‧‧‧第一畫素電極 314‧‧‧ first pixel electrode

320‧‧‧第二子畫素 320‧‧‧Second sub-pixel

322‧‧‧第二電晶體 322‧‧‧Second transistor

322a‧‧‧第二通道層 322a‧‧‧second channel layer

322b‧‧‧第二閘極 322b‧‧‧second gate

322c‧‧‧第二汲極 322c‧‧‧second bungee

322d‧‧‧第二源極 322d‧‧‧second source

324‧‧‧第二畫素電極 324‧‧‧Second pixel electrode

D1‧‧‧第一方向 D1‧‧‧ first direction

D2‧‧‧第二方向 D2‧‧‧ second direction

L1‧‧‧列方向 L1‧‧‧ direction

L2‧‧‧行方向 L2‧‧‧ direction

T1、T2‧‧‧連線 T1, T2‧‧‧ connection

S‧‧‧偏移程度 S‧‧‧degree of offset

Claims (17)

一種畫素陣列,包括:多條掃描線,沿著列方向曲折延伸;多條資料線,沿著行方向延伸並與該些掃描線相交;多個畫素,與該些掃描線以及該些資料線連接,排列於第n列中的各該畫素包括:一第一子畫素,包括一第一電晶體與一第一畫素電極,其中該第一電晶體的一第一閘極與第(n+1)條掃描線連接,而該第一電晶體的一第一汲極與該第一畫素電極連接;以及一第二子畫素,包括一第二電晶體與一第二畫素電極,其中該第二電晶體的一第二閘極與第n條掃描線連接,該第二電晶體的一第二汲極與該第二畫素電極連接,該第一電晶體的一第一源極以及該第二電晶體的一第二源極連接至該些資料線中的同一條資料線,連接至同一條資料線上的第一電晶體與第二電晶體的形狀以該資料線為基準呈鏡像的形式。 A pixel array includes: a plurality of scan lines extending in a zigzag direction along a column direction; a plurality of data lines extending along a row direction and intersecting the scan lines; a plurality of pixels, and the scan lines and the plurality of pixels Each of the pixels arranged in the nth column includes: a first sub-pixel including a first transistor and a first pixel electrode, wherein a first gate of the first transistor Connected to the (n+1)th scan line, and a first drain of the first transistor is connected to the first pixel electrode; and a second subpixel includes a second transistor and a first a second pixel electrode, wherein a second gate of the second transistor is connected to the nth scan line, and a second drain of the second transistor is connected to the second pixel electrode, the first transistor a first source and a second source of the second transistor are connected to the same data line of the data lines, and are connected to the shapes of the first transistor and the second transistor on the same data line. The data line is in the form of a mirror image. 如申請專利範圍第1項所述之畫素陣列,其中該第一電晶體與該第二電晶體的佈局型態是以對應之掃描線為基準向上凸出的型態。 The pixel array of claim 1, wherein the layout pattern of the first transistor and the second transistor is upwardly convex based on a corresponding scan line. 如申請專利範圍第1項所述之畫素陣列,其中該第一電晶體與該第二電晶體的佈局型態是以對應之掃描線為基準向下凸出的型態。 The pixel array of claim 1, wherein the layout pattern of the first transistor and the second transistor is a downward convex shape based on a corresponding scan line. 如申請專利範圍第3項所述之畫素陣列,其中在排列於同一列的畫素中,該些第一電晶體與該些第二電晶體位於該列畫素的同一側。 The pixel array of claim 3, wherein in the pixels arranged in the same column, the first transistors and the second transistors are located on the same side of the column of pixels. 如申請專利範圍第4項所述之畫素陣列,其中每一第一畫素電極或每一第二畫素電極的三個側邊被對應之上一條掃描線圍繞。 The pixel array of claim 4, wherein three sides of each of the first pixel electrodes or each of the second pixel electrodes are surrounded by a corresponding one of the scan lines. 如申請專利範圍第5項所述之畫素陣列,其中每一掃描線在畫素陣列上呈 一方波形。 The pixel array according to claim 5, wherein each scan line is on the pixel array One side waveform. 如申請專利範圍第5項所述之畫素陣列,其中各該掃描線包括:多個第一導線,沿著該列方向延伸;以及多個第二導線,沿著該行方向延伸,其中,該些第一導線與該些第二導線交替地連接。 The pixel array of claim 5, wherein each of the scan lines comprises: a plurality of first wires extending along the column direction; and a plurality of second wires extending along the row direction, wherein The first wires are alternately connected to the second wires. 如申請專利範圍第5項所述之畫素陣列,其中部分該些第二導線被該第一畫素電極或該第二畫素電極其中之一覆蓋。 The pixel array of claim 5, wherein a portion of the second wires are covered by one of the first pixel electrode or the second pixel electrode. 如申請專利範圍第5項所述之畫素陣列,其中該些第二導線位於同一畫素中的該第一子畫素與該第二子畫素之間以及相鄰兩畫素之間。 The pixel array of claim 5, wherein the second wires are located between the first sub-pixel and the second sub-pixel in the same pixel and between two adjacent pixels. 如申請專利範圍第5項所述之畫素陣列,其中各該第一導線的長度實質上大於等於其中一個畫素電極的寬度,而各該第二導線的長度實質上大於等於其中一個畫素電極的長度。 The pixel array of claim 5, wherein each of the first wires has a length substantially greater than or equal to a width of one of the pixel electrodes, and each of the second wires has a length substantially greater than or equal to one of the pixels. The length of the electrode. 如申請專利範圍第5項所述之畫素陣列,其中各該掃描線更包括:多個第一分支,連接部份該些第一導線且沿著該行方向延伸;以及多個第二分支,連接部份該些第一導線且沿著該行方向延伸,其中,該些第一分支與該些第二分支實質上平行於該些第二導線。 The pixel array of claim 5, wherein each of the scan lines further comprises: a plurality of first branches connecting the portions of the first wires and extending along the row direction; and a plurality of second branches Connecting a portion of the first wires and extending along the row direction, wherein the first branches and the second branches are substantially parallel to the second wires. 如申請專利範圍第5項所述之畫素陣列,其中位於同一畫素中的部份該第一分支與部份該第二分支被該第二畫素電極覆蓋。 The pixel array of claim 5, wherein a portion of the first branch and a portion of the second branch located in the same pixel are covered by the second pixel electrode. 如申請專利範圍第1項所述之畫素陣列,其中與同一條資料線連接的畫素分佈於該條資料線之兩側。 The pixel array of claim 1, wherein the pixels connected to the same data line are distributed on both sides of the data line. 如申請專利範圍第13項所述之畫素陣列,其中在排列於同一列的畫素中,位於偶數行的部分畫素與其中一條掃描線連接,而位於奇數行的部分畫素與另一條掃描線連接。 The pixel array according to claim 13, wherein in the pixels arranged in the same column, a part of the pixels in the even line is connected to one of the scanning lines, and a part of the pixels in the odd line and the other Scan line connection. 如申請專利範圍第1項所述之畫素陣列,其中在排列於第n列的各該畫素中,該第一電晶體與該第二電晶體分別具有一第一通道層以及一第二通 道層,該第一通道層位於第(n+1)條掃描線上方,該第二通道層位於第n條掃描線上方,該第一汲極自該第一通道層沿著一第一方向與該第一畫素電極連接,該第二汲極自該第二通道層沿著一第二方向與該第二畫素電極連接,且該第一方向與該第二方向相同。 The pixel array of claim 1, wherein in the pixels arranged in the nth column, the first transistor and the second transistor respectively have a first channel layer and a second through a first channel layer above the (n+1)th scan line, the second channel layer being above the nth scan line, the first drain layer being along the first direction from the first channel layer Connected to the first pixel electrode, the second drain is connected to the second pixel electrode from the second channel layer along a second direction, and the first direction is the same as the second direction. 如申請專利範圍第1項所述之畫素陣列,其中在排列於同一列的畫素中,該些第一與第二子畫素的中心點的連線趨近於同一條直線。 The pixel array of claim 1, wherein in the pixels arranged in the same column, the lines connecting the center points of the first and second sub-pixels are close to the same line. 如申請專利範圍第1項所述之畫素陣列,其中該第一子畫素更包括一第一電容電極,電性連接該第一畫素電極,且該第一電容電極與該資料線屬同一膜層並與上一條掃描線部分重疊,以構成一第一儲存電容,而該第二子畫素更包括一第二電容電極,電性連接該第二畫素電極,且該第二電容電極與該資料線屬同一膜層並與上一條掃描線部分重疊,以構成一第二儲存電容。 The pixel array of claim 1, wherein the first sub-pixel further comprises a first capacitor electrode electrically connected to the first pixel electrode, and the first capacitor electrode and the data line are The same film layer is partially overlapped with the previous scan line to form a first storage capacitor, and the second sub-pixel further includes a second capacitor electrode electrically connected to the second pixel electrode, and the second capacitor The electrode and the data line belong to the same film layer and partially overlap with the previous scan line to form a second storage capacitor.
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