TWI400760B - Conductive ball configuration mask and manufacturing method thereof - Google Patents

Description

Conductive ball arrangement mask and manufacturing method thereof

The present invention relates to a mask in which a conductive ball is disposed at a specific position of a substrate such as a semiconductor wafer, and a method of manufacturing the same.

In order to connect various electronic components (connection terminals) to a plurality of (many) electrodes disposed on a substrate such as a semiconductor wafer, the following methods are employed.

Solder balls (micro balls formed by solder) are disposed on the plurality of electrodes disposed on the substrate, and the entire substrate on which the solder balls (conductive balls) are placed is heated, and the balls are melted, cooled, and solidified. Each solder ball is adhered to each electrode of the substrate.

In this way, the solder (solder ball) becomes a connection terminal of each electrode.

Next, various electronic components (the connection terminals thereof) are connected to the respective connection terminals.

As described above, in the partial process in which the terminals are formed on the respective electrodes of the substrate, a mask such as Patent Document 1 is used in order to arrange the solder balls on the respective electrodes of the substrate.

The mask has a second surface on a surface of the first surface and the opposite side, and a through hole (a solder ball receiving through hole) formed between the first surface and the second surface. Each of the through holes is formed to correspond to each electrode disposed on the substrate.

Next, the mask is placed (overlapped) on the substrate, and a plurality of solder balls are supplied onto the mask, and the solder balls are accommodated in the respective through holes.

In this manner, the solder balls are disposed on the respective electrodes.

However, in recent years, the use of electronic devices such as semiconductors has been steadily pursuing miniaturization and high density. One of the factors is the miniaturization of the substrate itself and the further shortening of the distance between the electrodes disposed on the substrate. For example, in the current state, the distance between adjacent electrodes (the center distance between the two electrodes) is about 150 μm.

The shorter the distance between the electrodes disposed on the substrate (more precisely, the distance between adjacent electrodes), the more necessary it is necessary to arrange each solder ball at each electrode (the center position).

Since the distance between the adjacent electrodes is shorter, if the position of each solder ball deviates from the original position (the center position of the electrode), the possibility that the solder balls contact each other to cause an electrical short is higher.

That is, as described above, when the solder balls are placed on the substrate (each electrode) and the substrate is heated to melt the solder balls, the height of the solder balls is lowered, and the solder balls are directed toward the substrate. The direction spreads. Therefore, if the arrangement of the solder balls deviates from the original position, the adjacent solder balls may come into contact with each other during the heating and melting.

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-327536

An object of the present invention is to provide a mask in which a conductive ball can be placed at a specific position on a substrate with good precision and a method of manufacturing the same.

In order to solve the problem, the conductive ball-disposing mask of the invention of the first aspect of the invention has a conductive ball-receiving through-hole, and the conductive ball is accommodated in the conductive ball-receiving through-hole in a state of being superposed on the substrate. The mask in which the conductive ball is disposed at a specific position on the substrate has a second surface having a surface on the first surface and the opposite side, and a spanning surface formed between the first surface and the second surface The through hole corresponding to a portion of the conductive ball receiving through hole is located in a main layer of the through hole corresponding to a largest diameter portion of the conductive ball; and is disposed on the first surface of the main layer and At least one of the surfaces of the second surface has a sub-layer corresponding to the through hole of the main layer and corresponding to the other portion of the conductive ball-receiving through hole.

The material of the main layer is represented by a metal (in this case, the main layer may be referred to as a main metal layer). However, the main layer does not have to be formed of a metal, but may be formed using other substances having a large strength (high durability).

The sublayer is not limited to the overall configuration of the main layer (the surface of at least one of the first surface and the second surface), and includes some unformed forms.

Representative examples of conductive balls are solder balls (microballs formed of solder). However, the conductive ball is not limited thereto, and may be a metal having a center portion and covered with a metal, or may be formed of other metals or the like.

The conductive ball placement cover is placed (overlapped) on the substrate, and the conductive ball is accommodated in the conductive ball accommodation through hole, and the conductive ball is placed at a specific position on the substrate. Further, the concept of superimposing the conductive ball arrangement mask on the substrate is not limited to the form placed on the substrate, and includes a state close to the substrate. For the above reasons, it is not limited to the case where there is no gap between the conductive ball arrangement mask and the substrate, and also when there is a gap between the substrates.

The conductive ball arrangement mask has a main layer and at least one sub-layer, and the conductive ball-receiving through-holes are formed by through holes formed in the respective layers.

Next, the main layer through hole corresponds to the largest diameter portion of the conductive ball. Here, the thinner the thickness of the material forming the through hole, the smaller the dimensional error of the through hole and the size of the through hole (the error is called the dimensional tolerance). That is, when a through hole is formed by a thin material, an object having a size closer to a set value can be formed.

In the conductive ball disposing mask, the main layer is set to correspond to the largest diameter portion of the conductive ball, and the main layer through hole is set to correspond to the size of the largest diameter portion of the conductive ball. Next, since the thickness of the main layer is smaller than the thickness of the entire mask for the conductive ball arrangement, the dimensional tolerance of the through hole is smaller than when the conductive ball placement mask is formed only by one main layer.

Therefore, when the conductive ball is placed in a mask, the conductive ball can be placed at a specific position on the substrate with good precision.

The conductive ball arrangement mask according to the second aspect of the invention is the conductive ball arrangement mask according to the first aspect of the invention, wherein the first surface is superposed on a side of the substrate, and the main layer is At least a portion of the through-holes in the thickness direction thereof gradually increases in diameter from the side of the first surface toward the side of the second surface.

"A form in which at least a portion of the through-holes of the main layer in the thickness direction gradually expands from the side of the first surface toward the side of the second surface" includes "the aforementioned through-holes of the main layer One of the thickness direction of at least one side of the second surface gradually increases the diameter from the side of the first surface to the second surface and the through hole of the main layer from the first surface to the first surface The second surface is gradually enlarged."

In addition to the action and effect of the conductive ball disposing mask of the first invention of the patent application, the following effects and effects can be obtained in the mask for the conductive ball arrangement of the present invention.

In other words, since at least a part of the thickness direction of the main layer through-holes gradually increases in diameter from the side of the first surface toward the side of the second surface, generally, the conductive ball arrangement mask can be easily accommodated. Conductive ball.

The conductive ball arrangement mask according to the invention of claim 1 is the conductive ball arrangement mask according to the first aspect of the invention, wherein the first surface is superposed on a side of the substrate, and the main layer At least a portion of the through-holes in the thickness direction thereof is gradually reduced in diameter from the side of the first surface toward the side of the second surface.

"A form in which at least a portion of the through-holes of the main layer in the thickness direction gradually decreases from the side of the first surface toward the side of the second surface" includes "the aforementioned through-holes of the main layer One of the thickness direction of at least one side of the first surface is gradually reduced from the first surface toward the second surface" and "the through hole of the main layer, from the first surface to the second surface Gradually reduce the caliber."

In the case of the mask for the conductive ball arrangement of the present invention, in addition to the action and effect of the mask for the conductive ball arrangement of the first invention of the patent application, the following actions and effects can be obtained.

In other words, since at least one of the sides of the main layer through-holes on the side of at least the first surface is gradually reduced in diameter from the first surface toward the second surface, generally, the conductive ball arrangement mask can be prevented. The conductive ball accommodated in the conductive ball receiving through hole is dropped from the conductive ball receiving through hole.

The method for producing a conductive ball arrangement mask according to the fourth aspect of the invention, comprising: preparing a second surface having a first surface and an opposite side thereof; and forming a first surface and the second surface across the first surface and the second surface a step of forming a main layer between the through holes; and a sublayer forming surface on at least one of the first surface and the second surface of the main layer, forming a sublayer having a through hole corresponding to the through hole of the main layer a sub-layer formation stage; and the sub-layer formation stage includes: a photo-curable film disposing stage in which the photo-curable film is disposed on the sub-layer forming surface; and a portion of the main-layer through-hole is light-transmitting blocked And at least a portion of the light transmissive blocking portion is a photoresist of the light transmitting portion, and is disposed on the photocurable film to form a photoresist arrangement phase of the photoresist arrangement; Light-irradiating light is applied to the photoresist arrangement, and a portion of the photo-curable film that is cured corresponding to the light-transmitting portion is irradiated with light; and the photoresist is removed from the photoresist arrangement to form light. Resistive removal of photoresist And a dissolution stage in which a portion corresponding to the light transmission preventing portion among the photocurable films of the photoresist removal body is dissolved by a solution for dissolving.

In the method for producing a conductive ball arrangement mask of the present invention, a conductive ball placement mask is produced in the following manner.

First, a main layer having a through hole formed between the first surface and the second surface is prepared.

Next, when the photocurable film is disposed, the photocurable film is disposed on the sublayer forming surface of the main layer.

Next, in the photoresist arrangement stage, a photoresist is disposed on the photocurable film to form a photoresist arrangement. A portion of the photoresist corresponding to the through hole of the main layer is a light transmission preventing portion, and at least a portion of the other of the light transmission preventing portions is a light transmitting portion.

Next, in the light irradiation stage, the photoresist arrangement is irradiated with light from the side of the photoresist, and only a portion of the photo-curable film corresponding to the light-transmitting portion of the photoresist is received by light to harden the portion.

Next, in the photoresist removal stage, the photoresist is removed from the photoresist arrangement to form a photoresist removal body.

Next, in the dissolution stage, a portion of the photo-curable film of the photoresist-removing body corresponding to the light-transmitting preventing portion (the portion other than the hardened portion) is dissolved.

In this manner, the sub-layer having the through-hole corresponding to the through hole of the main layer can be formed on the sub-layer forming surface of the main layer.

If necessary, the above-described series of processes may be repeatedly performed on the other sub-layer forming surface of the main layer to form another sub-layer.

As described above, the present invention can easily manufacture the mask for conductive ball arrangement according to the first aspect of the invention.

The method for producing a conductive ball arrangement mask according to the fifth aspect of the invention, comprising: preparing a second surface having a first surface and an opposite side thereof; and forming a first surface and the second surface across the first surface a step of forming a main layer between the through holes; and a sublayer forming surface on at least one of the first surface and the second surface of the main layer, forming a through hole corresponding to the main layer and slightly larger than the through hole a sub-layer formation stage of the sub-layer of the through-hole; and the sub-layer formation stage includes a photo-curable film arrangement stage in which the photo-curable film is disposed on the sub-layer formation surface; and corresponds to the main layer through-hole a portion of the light-transmitting portion that is larger than the through-hole, and at least a portion of the light-transmitting portion of the light-transmitting portion is a light-resistance blocking portion, and is disposed on the photo-curable film to form a photoresist arrangement. a photoresist arrangement stage of the body; the photoresist arrangement is irradiated with light from the side of the photoresist, and a portion of the photo-curable film corresponding to the light-transmitting portion is cured to form a light-blocking portion Stage; from the aforementioned photoresist a photoresist removal step in which the photoresist is removed to form a photoresist removal body, and a portion other than the plating stopper in the photocurable film of the photoresist removal body is dissolved by a solution for dissolving a sub-layer forming surface exposing stage in which a portion other than the portion of the layer forming surface is formed, wherein the exposed portion of the sub-layer forming surface is plated to form a metal layer; and utilizing The dissolution solution dissolves the dissolution stage of the plating stopper.

In the method for producing a conductive ball arrangement mask of the present invention, a conductive ball placement mask is produced in the following manner.

First, a main layer having a through hole formed between the first surface and the second surface is prepared.

Next, when the photocurable film is disposed, the photocurable film is disposed on the sublayer forming surface of the main layer.

Next, in the photoresist arrangement stage, a photoresist is disposed on the photocurable film to form a photoresist arrangement. Among the photoresists, a portion of the light-transmitting portion corresponding to the main-layer through-hole and slightly larger than the through-hole, and at least a portion of the other of the light-transmitting portions are light-transmitting blocking portions.

Next, in the light irradiation stage, the photoresist arrangement body is irradiated with light from the side of the photoresist, and only a portion of the light-transmitting portion of the corresponding photoresist in the photo-curable film is exposed to light to harden the portion to form a plating block. unit.

Next, in the photoresist removal stage, the photoresist is removed from the photoresist arrangement to form a photoresist removal body.

When the sub-layer forming surface is exposed, the portion other than the plating stopper in the photo-curable film of the photoresist removing body (corresponding to the portion of the light-transmitting preventing portion) is dissolved, and the sub-layer forming surface is disposed. A portion other than the portion of the plating stopper is exposed.

Next, at the plating stage, the exposed portion of the sub-layer forming surface is plated to form a metal layer (sub-layer).

Next, in the dissolution stage, the plating stopper is dissolved by the dissolution liquid, and a through hole is formed in the portion.

In this manner, a sub-layer having a through-hole corresponding to the main-layer through-hole and slightly larger than the through-hole is formed on the sub-layer forming surface of the main layer.

If necessary, the above-described series of processes may be repeatedly performed on the other sub-layer forming surface of the main layer to form another sub-layer.

As described above, in the present invention, it is easy to manufacture the conductive ball disposing mask according to the first aspect of the invention (the number of through holes of the sublayer is larger than the main layer through hole).

[Embodiment 1]

Next, a first embodiment of the present invention will be described with reference to Figs. 1 to 3 .

As shown in FIG. 1, the conductive ball placement mask 10A is used for a substrate 100 such as a semiconductor wafer. A plurality of (majority) electrodes 110 are disposed on the substrate 100.

As shown in FIGS. 1 and 3, the conductive ball disposing mask 10A has a plurality of (multiple) conductive ball-receiving through holes 15. Each of the conductive ball-receiving through holes 15 corresponds to each of the electrodes 110 of the substrate 100.

The conductive ball placement mask 10A is superposed on a specific position of the substrate 100. As shown in FIG. 3, each of the conductive ball-receiving through-holes 15 is aligned with the respective electrodes 110 (positions) of the substrate.

In this state, the solder balls 200 (conductive balls) are housed in the respective conductive ball-receiving through-holes 15, and the solder balls 200 are placed on the respective electrodes 110 of the substrate 100 (described later in detail).

The solder balls 200 are microballs formed of solder, at least slightly spherical (i.e., spherical or slightly spherical). The diameter of the solder ball 200 is, for example, 80 to 500 μm.

As shown in FIG. 2 and FIG. 3, the conductive ball arrangement mask 10A is composed of a main metal layer 20A (main layer) and two sub-layers (first sub-layer 30a and second sub-layer 30b). Formed.

The main metal layer 20A is in the form of a thin plate or a film. The main metal layer 20A is formed of a metal such as stainless steel, nickel, or a nickel alloy.

The main metal layer 20A has a first surface 21 and a second surface 22 . The surface (lower surface) placed on the side of the substrate 100 is referred to as a first surface 21, and the surface (upper surface) on the opposite side is referred to as a second surface 22.

The first sub-layer 30a is disposed on the first surface 21 of the main metal layer 20A.

The second sub-layer 30b is disposed on the second surface 22 of the main metal layer 20A.

The first sub-layer 30a may extend over the entire surface of the first surface 21 of the main metal layer 20A, or may not extend over the entire surface of the first surface 21 of the main metal layer 20A, and may have no portion of the first sub-layer 30a. The second sub-layer 30b is also the same.

Each of the first sub-layer 30a and the second sub-layer 30b has a thin plate shape or a film shape. The first sub-layer 30a and the second sub-layer 30b are formed of a synthetic resin (acrylic or epoxy).

Further, a plurality of (general) protruding leg portions may be formed on the lower surface of the first sub-layer 30a. At this time, when the conductive ball arrangement mask 10A is placed on the substrate 100 in a superposed manner, the portion of the first sub-layer 30a (the conductive ball-arranged mask 10A) where the leg portion is not formed and the substrate 100 are There will be gaps between them.

On the other hand, when the conductive ball disposing mask 10A is placed on the substrate 100 in a superposed manner without forming the leg portion, the first sub-layer 30a (the conductive ball disposing mask 10A) and the substrate 100 are in contact with each other. (Fig. 3 is the state at this time).

The thickness of the main metal layer 20A is, for example, 50 to 150 μm.

The thickness of the first sub-layer 30a (including the leg portion when the leg portion is formed) and the thickness of the second sub-layer 30b are, for example, 50 to 200 μm.

The entire thickness of the conductive ball disposing mask 10A is, for example, 150 to 550 μm.

Each of the conductive ball-receiving through holes 15 is formed across the main metal layer 20A, the first sub-layer 30a, and the second sub-layer 30b.

That is, a plurality of through holes 25A are formed in the main metal layer 20A, and a plurality of through holes 35a and 35b are formed in the first sub-layer 30a and the second sub-layer 30b, respectively. Each of the through hole 25A, the through hole 35a, and the through hole 35b corresponds to one portion of the conductive ball accommodating through hole 15. It can be said that each of the conductive ball accommodating through holes is formed by each of the through holes 25A, the through holes 35a, and the through holes 35b. 15.

Each of the through holes 25A of the main metal layer 20A has a circular shape, and the positions of the through holes 25A are disposed at positions corresponding to the respective electrodes 110 of the substrate 100.

Each of the through holes 35a of the first sub-layer 30a and each of the through holes 35b of the second sub-layer 30b are circular, and the positions of the through-holes 35a and 35b correspond to the positions of the through-holes 25A of the main metal layer 20A. .

As described above, the positions at which the respective conductive balls accommodate the through holes 15 correspond to the positions of the respective electrodes 110 of the substrate 100.

As shown in FIG. 3, the diameter of each of the through holes 25A of the main metal layer 20A corresponds to the diameter of the solder ball 200. That is, there are a number of diameters larger than the diameter of the solder balls 200. Specifically, for example, the diameter is set to be about 20 μm larger than the diameter of the solder ball 200.

The diameter of each of the through holes 35a of the first sub-layer 30a and each of the through holes 35b of the second sub-layer 30b is set to be larger than the diameter of the through-holes 25A of the main metal layer 20A.

When the conductive ball disposing mask 10A is placed on the horizontal substrate 100 (the upper surface thereof) (the state in which the conductive ball arrangement mask 10A is placed on the upper surface of the substrate 100), the solder ball 200 is housed in the conductive ball receiving through hole 15 ( At this time, the solder ball 200 is placed on the electrode 110), and the through hole 25A of the main metal layer 20A corresponds to the largest diameter portion of the central height portion of the solder ball 200 (the largest diameter portion in the horizontal direction of the longitudinal section) .

Further, as described above, the distance between the electrode 110 (on the upper surface) and the uppermost surface of the conductive ball disposing mask 10A (the upper surface of the second sub-layer 30b) is 0.8 times to 1.4 times the height (diameter) of the solder ball 200. .

The thickness of the main metal layer 20A, the first sub-layer 30a, and the second sub-layer 30b and the diameter of the solder ball 200 have the dimensional relationship as described above. That is, the thickness of each layer (the main metal layer 20A, the first sub-layer 30a, and the second sub-layer 30b) is set in the above manner in accordance with the diameter of the solder ball 200.

In the substrate 100 (first drawing), a plurality of positioning marks (not shown) are disposed, and the conductive ball disposing mask 10A is also provided with a positioning mark corresponding to the plural of the marks (omitted) Graphic).

Next, a method of manufacturing the conductive ball arrangement mask 10A will be described with reference to FIGS. 10A to 10C.

First, the main metal layer 20A is produced by any of the known methods or other methods shown below (Fig. 10A).

In the first method, a metal plate (20A) is prepared, and a specific portion of the metal plate (20A) is irradiated with a laser to form a through hole 25A.

In the second method, a metal plate (20A) is prepared, and a through hole 25A having a specific size is formed by etching at a specific portion of the metal plate (20A). That is, the mask is placed on both sides of the metal plate (20A) and immersed in the etching liquid. An opening is formed in a portion of the mask corresponding to each of the through holes 25A formed in the metal plate (20A). Thus, the portion of the metal plate (20A) exposed from each of the openings of the mask is etched, and the through hole 25A is formed in the portion.

The third method is an electroforming method. That is, a specific mother type is prepared, and a resist is disposed on a portion of each of the surfaces of the mother metal forming the through holes 25A of the main metal layer 20A. In this state, the surface of the mother is plated, and the plated layer is peeled off from the mother in a state in which the plated layer has a specific thickness. In this manner, a metal plate (main metal layer 20A) having a through hole 25A having a specific size at a specific portion is formed.

Next, as shown below, the first sub-layer 30a is formed on the first surface 21 of the main metal layer 20A. At this time, the first surface 21 corresponds to the sublayer forming surface of the present invention.

First, as shown in FIG. 10A, the photocurable film 40A is attached to the first surface 21 of the main metal layer 20A (metal plate). This stage is a photocuring film assembly stage.

The photocurable film 40A is formed of a synthetic resin such as acryl or epoxy, and has a property that the irradiation light is hardened.

Next, as shown in FIG. 10A, the photoresist 50A is placed (disposed) on the photocurable film 40A. In this way, a three-layer body (photoresist arrangement) is formed (the symbol is omitted). This stage is the photoresist configuration stage.

A portion of each of the through holes 25A of the corresponding main metal layer 20A among the photoresists 50A is a light transmission preventing portion 55 (i.e., black), and a portion other than the light transmitting portion 56 (i.e., transparent).

Further, in addition to the form of the light transmitting portion 56 (the above) other than the portion of the photoresist 50A corresponding to each of the through holes 25A of the main metal layer 20A, it may be only corresponding to the main metal layer 20A. The peripheral portion of each of the through holes 25A is in the form of the light transmitting portion 56.

A plurality of positioning marks (not shown) are disposed at positions corresponding to each other in the main metal layer 20A and the photoresist 50A, and the photoresist 50A is attached to the positioning marks so as to coincide with each other. Photocurable film 40A. Thus, the photoresist 50A can be attached to the photocurable film 40A in accordance with the specific positional relationship described above.

Next, as shown in Fig. 10A, the three-layer body is irradiated with light from the side of the photoresist 50A. This stage is the light irradiation stage.

Thereby, the light can transmit through the light transmitting portion 56 of the photoresist 50A, and reach a portion of the photo-curable film 40A corresponding to the light transmitting portion 56, so that the portion is hardened and strongly adhered to the main metal layer 20A ( First face 21). In this manner, the cured synthetic resin layer 46 (first sub-layer 30a) is formed (see also FIG. 10B).

On the other hand, the light cannot reach the portion corresponding to the light transmission preventing portion 55 (the portion corresponding to the through hole 25A of the main metal layer 20A) among the photo-curable films, and the portion does not harden. This is called an uncured portion 41 (Fig. 10B).

Next, as shown in FIG. 10B, the photoresist 50A (Fig. 10A) is removed (removed) from the above-mentioned three-layer body (photoresist arrangement) to form the main metal layer 20A and the photocurable film 40A. Layer (photoresist removed) (omitted from the symbol). This stage is the photoresist removal stage.

Next, the two-layered body is immersed in a solution for dissolution (for example, 0.8 to 1.3% by weight of an anhydrous sodium carbonate aqueous solution). Thus, as shown in FIG. 10B to FIG. 10C, the dissolution liquid dissolves the uncured portion 41 of the photo-curable film 40A, and cures the synthetic resin layer 46 (the first sub-layer 30a) to form a through-hole. 35a. This stage is the dissolution stage.

In other words, the hardened synthetic resin layer 46 originally has the through hole 35a, and dissolves the unhardened portion 41 that blocks the through hole 35a, so that the through hole 35a is exposed.

As described above, as shown in FIG. 10C, the first sub-layer 30a having the through hole 35a corresponding to the through hole 25A is formed on the first surface 21 of the main metal layer 20A.

Then, the two-layer body (the omitting symbol) is vertically inverted, and the second sub-layer 30b is formed on the second surface 22 of the main metal layer 20A in the same manner as described above (in FIG. 10C, the dotted line is indicated by a two-dotted line). ).

Thus, the conductive ball arrangement mask 10A (Fig. 3) was produced.

Next, a method of using the conductive ball arrangement mask 10A will be described with reference to FIGS. 1 and 3.

As will be described below, a connection terminal is formed on the electrode 110 of the substrate 100 (Fig. 1) such as a semiconductor wafer. The conductive ball arrangement mask 10A is used in some of the processes.

First, an adhesive is applied to each electrode 110 of the substrate 100 such as a semiconductor wafer in advance. At this time, the adhesive is attached only to the electrode 110 using a specific mask.

Next, as shown in FIGS. 1 and 3, the conductive ball placement mask 10A is placed (mounted) on the substrate 100. In other words, the conductive ball arrangement mask 10A is superposed on the substrate 100 (on the upper surface).

At this time, the positioning marks (described above) of the substrate 100 and the positioning marks (described above) of the conductive ball arrangement mask 10A are matched. As described above, the substrate 100 and the conductive ball disposing mask 10A have a specific relative positional relationship. In other words, each of the conductive ball-receiving through-holes 15 of the conductive ball arrangement mask 10A coincides with each of the electrodes 110 of the substrate 100.

Next, as shown in FIG. 3, a plurality of solder balls 200 are supplied to the upper surface of the conductive ball disposing mask 10A, and the solder balls 200 are placed on the conductive ball disposing mask 10A by a dedicated brush or a squeegee or the like. Move above.

Thereby, each of the solder balls 200 can be accommodated in each of the conductive balls of the conductive ball disposing mask 10A.

In this manner, the solder balls 200 can be disposed on the respective electrodes 110. Each of the solder balls 200 is temporarily adhered to each of the electrodes 110 by an adhesive (described above).

Thereafter, the conductive ball disposing mask 10A is removed from the substrate 100, and the substrate 100 and the solder ball 200 are heated by the warm air. Thereby, the solder ball 200 can be melted.

Thereafter, the substrate 100 and the solder balls 200 are cooled to cure the solder balls 200.

In this manner, the solder (solder ball 200) becomes a connection terminal of the electrode 110.

Next, the action and effect of the conductive ball arrangement mask 10A will be described with reference to Fig. 3 .

As described above, the conductive ball is disposed in a three-layer structure of the mask 10A-based main metal layer 20A, the first sub-layer 30a, and the second sub-layer 30b, and the entire thickness of the conductive ball-arranged mask 10A corresponds to The height (diameter) of the solder ball 200.

Therefore, compared with the case where only one layer of the main metal layer 20A corresponds to the height (diameter) of the solder ball 200 (that is, compared with the total thickness of the conductive ball disposing mask 10A), the main metal layer 20A Thinner thickness.

Therefore, the dimensional tolerance of the size of the through hole 25A of the main metal layer 20A is very stable.

That is, as described above, although the diameter of the through hole 25A of the main metal layer 20A is set to be larger than the diameter of the solder ball 200 (for example, about 20 μm larger than the diameter of the solder ball 200), the aforementioned main metal The manufacturing process of the layer 20A (whether or not the first to third methods) causes an error in the size between the actual through-hole 25A and the specific set value (this error is referred to as a dimensional tolerance).

Here, the dimensional tolerance is larger as the thickness of the material forming the through hole 25A (in this case, the main metal layer 20A) becomes thicker, and the thinner the thickness, the smaller the thickness.

Next, since the main metal layer 20A of the conductive ball disposing mask 10A corresponds to the diameter of the solder ball 200 (the diameter in the horizontal direction of the longitudinal section), the thickness of the main metal layer 20A is smaller than that of the conductive ball disposing mask 10A. The entire thickness is smaller than the dimensional tolerance of the through hole 25A when the conductive ball placement mask 10A is formed by only one main metal layer 20A.

Therefore, with the conductive ball arrangement mask 10A, the solder ball 200 can be placed on the respective electrodes 110 (the center position) with good precision.

[Embodiment 2]

Next, the conductive ball disposing mask 10B according to the second embodiment of the present invention will be described with reference to FIGS. 2 and 3.

The second embodiment is a modification of the first embodiment, and will be described focusing on differences from the first embodiment. Corresponding elements are attached with the same or corresponding symbols, and their descriptions are omitted as appropriate. At this point, the following is also the same.

The first sub-layer 30a and the second sub-layer 30b of the conductive ball arrangement mask 10B are all made of metal. This point is different from the conductive ball disposing mask 10A of the first embodiment. Metal means stainless steel, nickel, nickel alloy, and the like.

Next, the conductive ball disposing mask 10B can also obtain the same actions and effects as those of the conductive ball disposing mask 10A of the first embodiment.

Next, two manufacturing methods of the conductive ball arrangement mask 10B will be described.

The first manufacturing method of the conductive ball arrangement mask 10B is as follows. Description will be made with reference to Fig. 11 to Fig. 11E.

First, in the same manner as in the first embodiment, the main metal layer 20A is produced (Fig. 11A).

Next, as shown below, the first sub-layer 30a is formed on the first surface 21 of the main metal layer 20A. At this time, the first surface 21 corresponds to the sub-layer forming surface of the present invention.

First, as shown in FIG. 11A, the photocurable film 40B is attached to the first surface 21 of the main metal layer 20A (metal plate). This stage is a photocuring film assembly stage.

The photocurable film 40B is formed of a synthetic resin such as acryl or epoxy, and has a property that the irradiation light is hardened.

Next, as shown in FIG. 11A, the photoresist 50B is placed (disposed) on the photocurable film 40B. In this way, a three-layer body (photoresist arrangement) is formed (the symbol is omitted). This stage is the photoresist configuration stage.

A portion of each of the through holes 25A of the corresponding main metal layer 20A among the photoresists 50B is a light transmitting portion 56 (i.e., transparent), and a portion other than the light transmitting blocking portion 55 (i.e., black). Each of the light transmitting portions 56 is larger than the corresponding through holes 25A.

Further, in addition to the form of the light transmission preventing portion 55 (described above) other than the portion of the photoresist 50B corresponding to each of the through holes 25A of the main metal layer 20A, it may be only corresponding to the main metal layer. The portion around the portion of each of the through holes 25A of 20A is in the form of the light transmission preventing portion 55.

In the same manner as in the first embodiment, a plurality of positioning marks (not shown) are disposed at positions corresponding to each other in the main metal layer 20A and the photoresist 50B so that the positioning marks coincide with each other. The photoresist 50B is attached to the photocurable film 40B. Thus, the photoresist 50B can be attached to the photocurable film 40B in accordance with the specific positional relationship described above.

Next, as shown in Fig. 11A, the three-layer body is irradiated with light from the side of the photoresist 50B. This stage is the light irradiation stage.

Thereby, the light can transmit through the light transmitting portion 56 of the photoresist 50B, and reach a portion of the photo-curable film 40B corresponding to the light transmitting portion 56, so that the portion is hardened and strongly adhered to the main metal layer 20A ( First face 21). Thus, the plating stopper 47 of the synthetic resin is formed (see also FIG. 11B).

On the other hand, the light cannot reach the portion of the photo-curable film 40B corresponding to the light transmission preventing portion 55, and the portion does not harden. This is referred to as an uncured portion 42 (Fig. 11B).

On each of the main metal layers 20A of the main metal layer 20A corresponding to each of the through holes 25A, a plating stopper portion 47 having a shape larger than the shape of each of the through holes 25A is formed. Therefore, a portion (annular shape) of each of the plating resisting portions 47 larger than each of the through holes 25A is fixedly adhered to the main metal layer 20A.

Next, as shown in Fig. 11B, the photoresist 50B (Fig. 11A) is removed (removed) from the above-mentioned three-layer body (photoresist arrangement) to form the main metal layer 20A and the photocurable film 40B. Layer (photoresist removed) (omitted from the symbol). This stage is the photoresist removal stage.

Next, the two-layered body is immersed in a solution for dissolution (for example, 0.8 to 1.3% by weight of an anhydrous sodium carbonate aqueous solution).

Thus, as shown in FIG. 11B to FIG. 11C, the dissolution liquid dissolves the unhardened portion 42 of the photo-curable film 40B, and the plating stopper portion is disposed in the first surface 21 of the main metal layer 20A. A portion other than the portion of 47 (corresponding to a portion of the light transmission preventing portion 55) is exposed. This stage is the stage in which the sublayer formation surface is exposed.

Next, as shown in FIG. 11C to FIG. 11D, a metal layer 32 made of nickel or the like is formed by plating on the exposed portion of the first surface 21 (sub-layer forming surface) of the main metal layer 20A. (first sublayer 30a). This stage is the plating stage.

That is, the side of the first surface 21 of the main metal layer 20A is plated, as shown in FIG. 11D, the exposed portion of the first surface 21 (the portion where the plating stopper 47 is not disposed) is formed. Metal layer 32 (first sub-layer 30a). On the other hand, the metal layer (32) is not formed in the plating stopper portion 47 (synthetic resin).

In this manner, the two layers of the main metal layer 20A, the metal layer 32, and the plating stopper 47 are formed (the symbol is omitted).

Next, the two-layered body is immersed in a solution for dissolution (for example, 2.5 to 3.5% by weight of an aqueous sodium acidified aqueous solution or 5 to 10% by volume of an amine-based release agent aqueous solution).

Thus, as shown in FIG. 11 to FIG. 11E, the plating stopper 47 is dissolved by the dissolution liquid, and the through hole 35a is formed in the metal layer 32 (the first sub-layer 30a). This stage is the dissolution stage.

In other words, the metal layer 32 originally has the through hole 35a, and dissolves the plating stopper portion 47 that blocks the through hole 35a, and the through hole 35a is exposed.

As described above, as shown in FIG. 11E, the first sub-layer 30a having the through hole 35a corresponding to the through hole 25A and having a larger diameter than the through hole 25A is formed on the first surface 21 of the main metal layer 20A.

Then, the two-layer body (the omitting symbol) is vertically inverted, and the second sub-layer 30b is formed on the second surface 22 of the main metal layer 20A in the same manner as described above (in FIG. 11E, the dotted line is indicated by a two-dotted line) ).

Thus, the conductive ball arrangement mask 10B (Fig. 3) was produced.

The second manufacturing method of the conductive ball arrangement mask 10B is as follows.

The first sub-layer 30a and the second sub-layer 30b (Fig. 2 and Fig. 3) are produced in the same manner as the main metal layer 20A. That is, it is manufactured by laser, etching, electroforming, or the like.

Similarly to the main metal layer 20A, a plurality of positioning marks (not shown) corresponding to each other are disposed in the first sub-layer 30a and the second sub-layer 30b.

Then, the positioning mark of the first sub-layer 30a is aligned with the positioning mark of the main metal layer 20A, and the first sub-layer 30a is attached to the first surface 21 of the main metal layer 20A.

Similarly, the second sub-layer 30b is attached to the second surface 22 of the main metal layer 20A.

In this manner, the conductive ball arrangement mask 10B is formed.

Further, in the modification of the second embodiment, in the first embodiment, one of the first sub-layer 30a and the second sub-layer 30b is formed of a synthetic resin, and in the second embodiment, the metal is formed in the other form.

[Embodiment 3]

Next, a conductive ball arrangement mask 10C according to the third embodiment of the present invention will be described with reference to Fig. 4 . The third embodiment is a modification of the first or second embodiment, and will be described focusing on differences from the first embodiment and the like.

The through hole 25C of the main metal layer 20C of the conductive ball arrangement mask 10C is tapered from the second surface 22 (upper surface) to the first surface 21 (lower surface).

The height portion of the through hole 25C of the main metal layer 20C of the shield ball 10C corresponding to the central height portion of the solder ball 200 is corresponding to the diameter of the solder ball 200 (for example, the solder ball 200). The diameter is set to a degree of 20 μm.

The through hole 25C of the main metal layer 20C of the conductive ball arrangement mask 10C is tapered from the second surface 22 (upper surface) toward the first surface 21 (lower surface), in other words, from the first surface 21 (Bottom) gradually enlarges the diameter toward the second surface 22 (upper surface).

Therefore, in the case of the conductive ball arrangement mask 10C, in general, it is advantageous in that the solder ball 200 is easily accommodated in the conductive ball accommodation through hole 15.

[Embodiment 4]

Next, a conductive ball disposing mask 10D according to the fourth embodiment of the present invention will be described with reference to Fig. 5 . The fourth embodiment is also a modification of the first or second embodiment, and will be described focusing on differences from the first embodiment and the like.

The through hole 25D of the main metal layer 20D of the mask ball 10D is tapered from the first surface 21 (lower surface) to the second surface 22 (upper surface).

The conductive ball is disposed in the uppermost portion of the through hole 25D of the main metal layer 20D of the mask 10D, that is, the portion of the second surface 22 (upper surface) of the main metal layer 20D in the through hole 25D is It is set in such a manner as to correspond to the diameter of the solder ball 200 (for example, about 20 μm larger than the diameter of the solder ball 200).

In the conductive ball arrangement, the through hole 25D of the main metal layer 20D of the mask 10D is tapered from the first surface 21 (lower surface) toward the second surface 22 (upper surface), and in general, temporary accommodation can be prevented. The solder ball 200 that has passed through the conductive ball receiving through hole 15 is dropped from the conductive ball receiving through hole 15.

[Embodiment 5]

Next, a conductive ball disposing mask 10E according to the fifth embodiment of the present invention will be described with reference to Fig. 6 . The fifth embodiment is a related aspect of the first embodiment or the second embodiment, and will be described focusing on differences from the first embodiment and the like.

The conductive ball arrangement mask 10E has a two-layer structure of the main metal layer 20E and the sub-layer 30. The sub-layer 30 is formed on the first surface 21 (lower surface) of the main metal layer 20E. The sublayer 30 is formed of a synthetic resin or a metal.

The thickness of the main metal layer 20E is, for example, 50 to 350 μm. The thickness of the sub-layer 30 is, for example, 50 to 200 μm. The thickness of the entire conductive ball disposing mask 10E is, for example, 100 to 550 μm.

Next, when the conductive ball arrangement mask 10E is placed (mounted) on the horizontal substrate 100 (the surface thereof), the central height portion of the solder ball 200 (the largest aperture portion in the horizontal direction of the vertical section) corresponds to the main Metal layer 20E.

The conductive ball disposing mask 10E can also obtain the same actions and effects as those of the first embodiment and the like.

In other words, in the conductive ball disposing mask 10E, since the thickness of the main metal layer 20E is smaller than the entire thickness of the conductive ball disposing mask 10E, the dimensional tolerance of the through hole 25E of the main metal layer 20E is relatively stable. Therefore, the conductive ball disposing mask 10E can arrange the solder balls 200 at the respective electrodes 110 (the center position) with excellent precision.

[Embodiment 6]

Next, a conductive ball disposing mask 10F according to the sixth embodiment of the present invention will be described with reference to Fig. 7. This sixth embodiment is a modification of the fifth embodiment, and will be described focusing on differences from the fifth embodiment.

The conductive ball placement mask 10F has a two-layer structure of a main metal layer 20F and a sub-layer 30. The sub-layer 30 is formed on the second surface 22 (upper surface) of the main metal layer 20F. In other words, the conductive ball disposing mask 10F of the sixth embodiment has a structure in which the conductive ball disposing mask 10E of the fifth embodiment is vertically inverted.

In the conductive ball disposing mask 10F of the sixth embodiment, the same effects and effects as those of the conductive ball disposing mask 10E of the fifth embodiment can be obtained.

[Embodiment 7]

Next, a conductive ball disposing mask 10G according to a seventh embodiment of the present invention will be described with reference to Fig. 8. This seventh embodiment is also a modification of the fifth embodiment, and will be described focusing on differences from the fifth embodiment.

The through hole 25G of the main metal layer 20G of the shield ball 10G is tapered from the second surface 22 (upper surface) to the first surface 21 (lower surface).

The conductive ball is disposed in a height portion of the through hole 25G of the main metal layer 20G of the mask 10G corresponding to the central height portion of the solder ball 200, corresponding to the diameter of the solder ball 200 (for example, than the solder ball 200) Set by the way of a diameter of 20 μm.

In the conductive ball arrangement, the through hole 25G of the main metal layer 20G of the mask 10G is tapered from the second surface 22 (upper surface) toward the first surface 21 (lower surface), and the conductive ball is disposed in a mask. 10G also has the advantage of easily accommodating the solder balls 200.

[Embodiment 8]

Next, a conductive ball disposing mask 10H according to the eighth embodiment of the present invention will be described with reference to FIG. This eighth embodiment is also a modification of the fifth embodiment, and will be described focusing on the difference from the fifth embodiment.

The through hole 25H of the main metal layer 20H of the conductive ball arrangement mask 10H is tapered from the first surface 21 (lower surface) to the second surface 22 (upper surface).

The conductive ball is disposed in the uppermost portion of the through hole 25H of the main metal layer 20H of the mask 10H, that is, the portion of the second surface 22 (upper surface) of the main metal layer 20H in the through hole 25H is The setting is made corresponding to the diameter of the solder ball 200 (for example, about 20 μm larger than the diameter of the solder ball 200).

The through hole 25H of the main metal layer 20H of the conductive ball arrangement mask 10H is tapered from the first surface 21 (lower surface) toward the second surface 22 (upper surface), thereby preventing temporary accommodation in the conductive ball. The solder ball 200 accommodating the through hole 15 is dropped from the conductive ball receiving through hole 15.

Further, the above is only an embodiment of several examples of the present invention, and the scope of the present invention is not limited thereto.

The scope of the present invention is determined by the scope of the claims and the spirit of the invention, and various changes and modifications within the scope of the invention are included in the scope of the invention.

For example, a form in which the features of the respective embodiments are combined can be considered.

Further, the through holes of the sub-layer (the first sub-layer and/or the second sub-layer) may be tapered (the diameter is gradually reduced or the diameter is increased from the upper side to the lower side).

Further, the portion of the through hole of the main metal layer and/or the sub-layer (the first sub-layer and/or the second sub-layer) may be gradually reduced in diameter from the lower side toward the upper portion or enlarged in diameter.

The portion from the middle of the through hole of the main metal layer and/or the sub-layer (the first sub-layer and/or the second sub-layer) to the lower portion may be gradually reduced in diameter from the lower side or enlarged in diameter.

Further, a portion between the first intermediate height position and the second intermediate height position among the through holes of the main metal layer and/or the sub-layer (the first sub-layer and/or the second sub-layer) may be from below Gradually reduce the diameter or enlarge the diameter upwards.

Further, as shown below, for example, the height of the through hole in the main metal layer and/or the sub-layer (the first sub-layer and/or the second sub-layer) may be from the top to the top. The caliber is gradually reduced below, and the height from the middle to the lower part is gradually increased from the top to the bottom by a two-cone shape.

In contrast, as shown below, for example, the portion from the middle of the through hole of the main metal layer and/or the sublayer (the first sublayer and/or the second sublayer) to the upper portion is upward. Gradually expand the diameter downwards, and the height of the middle to the lower part is gradually reduced from the top to the bottom by a two-cone shape.

Further, it is not limited to the form of two layers or three layers composed of one layer of the main layer and one or two of the sublayers, and other one or more layers may be added thereto.

10A~10H. . . Conductive ball configuration mask

15. . . Conductive ball receiving through hole

20A~20H. . . Main metal layer (main layer)

twenty one. . . First side

twenty two. . . Second side

25A~25H. . . Through hole

30a. . . First sublayer (sublayer)

30b. . . Second sublayer (sublayer)

30. . . Sublayer

35a, 35b. . . Through hole

40A, 40B. . . Photocurable film

47. . . Electroplating block

50A, 50B. . . Photoresist

55. . . Light transmission blocking unit

56. . . Light transmission unit

100. . . Substrate

110. . . electrode

200. . . Solder ball (conductive ball)

Fig. 1 is a perspective view showing a mask for a conductive ball according to a first embodiment of the present invention and a method of using the same.

Fig. 2 is an exploded perspective view showing a mask for a conductive ball according to Embodiments 1 and 2 of the present invention.

Fig. 3 is a longitudinal sectional view showing a mask for a conductive ball according to Embodiments 1 and 2 of the present invention.

Fig. 4 is a longitudinal sectional view showing a mask for a conductive ball according to a third embodiment of the present invention.

Fig. 5 is a longitudinal sectional view showing a mask for a conductive ball according to a fourth embodiment of the present invention.

Fig. 6 is a longitudinal sectional view showing a mask for a conductive ball according to a fifth embodiment of the present invention.

Fig. 7 is a longitudinal sectional view showing a mask for a conductive ball according to a sixth embodiment of the present invention.

Fig. 8 is a longitudinal sectional view showing a mask for a conductive ball according to a seventh embodiment of the present invention.

Figure 9 is a longitudinal sectional view showing a mask for a conductive ball according to Embodiment 8 of the present invention.

Fig. 10 is a longitudinal sectional view showing a step of manufacturing a mask for a conductive ball according to Embodiment 1 of the present invention.

Fig. 10 is a longitudinal sectional view showing a first step of the method for producing a conductive ball-arranged mask according to the first embodiment of the present invention.

Fig. 10 is a longitudinal sectional view showing a first step of the method for producing a conductive ball-arranged mask according to the first embodiment of the present invention.

Fig. 11 is a longitudinal sectional view showing a step of manufacturing a mask for a conductive ball according to a second embodiment of the present invention.

Fig. 11 is a longitudinal sectional view showing a first step of the method for producing a conductive ball-arranged mask according to the second embodiment of the present invention.

Fig. 11 is a longitudinal sectional view showing a first step of the method for producing a conductive ball-arranged mask according to the second embodiment of the present invention.

Fig. 11 is a longitudinal sectional view showing a first step of the method for producing a conductive ball-arranged mask according to the second embodiment of the present invention.

Fig. 11 is a longitudinal sectional view showing a first step of the method for producing a conductive ball-arranged mask according to the second embodiment of the present invention.

10A. . . Conductive ball configuration mask

10B. . . Conductive ball configuration mask

15. . . Conductive ball receiving through hole

20A. . . Main metal layer (main layer)

twenty one. . . First side

twenty two. . . Second side

25A. . . Through hole

30a. . . First sublayer (sublayer)

30b. . . Second sublayer (sublayer)

35a. . . Through hole

35b. . . Through hole

100. . . Substrate

110. . . electrode

200. . . Solder ball (conductive ball)

Claims (5)

A conductive ball arrangement mask having a conductive ball-receiving through hole, and a conductive ball is accommodated in the conductive ball-receiving through hole in a state of being superposed on the substrate, and the conductive ball is placed at a specific position of the substrate The mask includes a main layer, a second surface having a surface on the first surface and the opposite side, and a span between the first surface and the second surface and corresponding to the conductive ball accommodation a through hole in one of the through holes, wherein the through hole corresponds to a maximum diameter portion of the conductive ball; and the sub layer is disposed on at least one of the first surface and the second surface of the main layer A through hole corresponding to the main layer through hole and corresponding to the other portion of the conductive ball receiving through hole. The conductive ball disposing mask according to the first aspect of the invention, wherein the first surface is superposed on a side of the substrate, and at least a part of a thickness direction of the through holes of the main layer The diameter is gradually increased from the side of the first surface toward the side of the second surface. The conductive ball disposing mask according to the first aspect of the invention, wherein the first surface is superposed on a side of the substrate, and at least a part of a thickness direction of the through holes of the main layer The diameter is gradually reduced from the side of the first surface toward the side of the second surface. A method for manufacturing a conductive ball arrangement mask, comprising: preparing a second surface having a first surface and an opposite side thereof, and forming a through-and-forth between the first surface and the second surface a sub-layer forming surface of the hole; and a sub-layer forming surface on at least one of the first surface and the second surface of the main layer, forming a sub-layer having a sub-layer corresponding to the through hole of the main layer through hole And the photo-curable film disposing stage is provided in the sub-layer forming stage, and the photo-curable film is disposed on the sub-layer forming surface; and the portion corresponding to the through-hole of the main layer is lighted in the photoresist arrangement stage a light blocking portion of the light transmitting portion in a portion other than the light blocking portion of the transmission preventing portion, and a photoresistive film disposed on the photocurable film to form a photoresist arrangement; and the light irradiation step from the light The photoresist is irradiated with light to the photoresist arrangement, and a portion of the photocurable film corresponding to the light transmitting portion is cured; and the photoresist is removed from the photoresist assembly to form the photoresist. Photoresist removal body; and dissolution Phase, using a dissolving liquid to dissolve the photoresist corresponding to the removal of the light curing of the film which portion of the light transmission preventing part. A method for manufacturing a conductive ball arrangement mask, comprising: preparing a second surface having a first surface and an opposite side thereof, and forming a through-and-forth between the first surface and the second surface a step of forming a main layer of the hole; and forming a surface of the sub-layer on the surface of at least one of the first surface and the second surface of the main layer, and forming a through-hole corresponding to the through-hole of the main layer and slightly larger than the through-hole a sub-layer formation stage of the sub-layer; and the sub-layer formation stage includes a photo-curable film disposing stage, and a photo-curable film is disposed on the sub-layer forming surface; and the photoresist arrangement stage corresponds to the main layer a portion of the hole that is larger than the portion of the through hole, and a portion of the light transmissive portion that is outside the light transmission blocking portion is disposed on the photocurable film to form a photoresist In the light irradiation stage, the photoresist arrangement body is irradiated with light from the side of the photoresist, and a portion corresponding to the light-transmitting portion of the photo-curable film is cured to form a plating stopper; the photoresist Removal phase, from the foregoing The resisting device removes the photoresist to form a photoresist removing body; and the sub-layer forming surface is exposed, and the portion other than the plating stopper portion of the photocurable film of the photoresist removing body is dissolved by the dissolving liquid. Exposing a portion of the sub-layer forming surface other than the portion forming the plating stopper; in the electroplating stage, plating the exposed portion of the sub-layer forming surface to form a metal layer; and dissolving the phase, utilizing the dissolving The plating stopper is dissolved in a liquid.