TWI395337B - Solar cell structure - Google Patents
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- TWI395337B TWI395337B TW98124574A TW98124574A TWI395337B TW I395337 B TWI395337 B TW I395337B TW 98124574 A TW98124574 A TW 98124574A TW 98124574 A TW98124574 A TW 98124574A TW I395337 B TWI395337 B TW I395337B
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- transparent conductive
- conductive oxide
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- 238000010521 absorption reaction Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000010409 thin film Substances 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 claims description 6
- 239000006096 absorbing agent Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 claims description 3
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 claims 1
- NMHFBDQVKIZULJ-UHFFFAOYSA-N selanylideneindium Chemical compound [In]=[Se] NMHFBDQVKIZULJ-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011195 cermet Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Description
本發明係有關太陽能電池結構，尤其是該太陽能電池結構中的後透明導電氧化(Back TCO)層或介面層具有一粗糙上表面，有助於光的散射並可增加光的吸收率。The present invention relates to a solar cell structure, and in particular, a back transparent conductive oxide (Back TCO) layer or interface layer in the solar cell structure has a rough upper surface, which contributes to light scattering and increases light absorption.
一般薄膜太陽能電池具有一基板、一背電極、一主要吸收層以及一前電極。目前產業界使用之前電極材料通常具有表面突起結構，並配合高反射之金屬背電極，增加光在主要吸收層中之光補獲路徑。A typical thin film solar cell has a substrate, a back electrode, a primary absorber layer, and a front electrode. Prior to use in the industry, electrode materials generally have a surface protrusion structure and cooperate with a highly reflective metal back electrode to increase the light-recovering path of light in the main absorption layer.
參閱第一圖，習知太陽能電池結構示意圖，其中該太陽能電池1係由下而上包括一基板50、一第一反射金屬層55、一透明導電層60、一第二反射金屬層65、一半導體薄膜層70以及一前電極75，其中該第一反射金屬層55以及第二反射金屬層65皆具有不平滑上表面，而該第一反射金屬層55、透明導電層60以及第二反射金屬層65可共組成一背電極。Referring to the first figure, a schematic diagram of a conventional solar cell structure, wherein the solar cell 1 includes a substrate 50, a first reflective metal layer 55, a transparent conductive layer 60, a second reflective metal layer 65, and a bottom from top to bottom. a semiconductor thin film layer 70 and a front electrode 75, wherein the first reflective metal layer 55 and the second reflective metal layer 65 both have a non-smooth upper surface, and the first reflective metal layer 55, the transparent conductive layer 60, and the second reflective metal Layer 65 can collectively form a back electrode.
一光線L射入該太陽能電池1後可經由該第一反射金屬層55或第二反射金屬層65將光線L都反射至該半導體薄膜層70，After the light L is incident on the solar cell 1, the light L can be reflected to the semiconductor film layer 70 via the first reflective metal layer 55 or the second reflective metal layer 65.
以提升該半導體薄膜層70的光能轉換率。The light energy conversion rate of the semiconductor thin film layer 70 is increased.
參閱第二圖，習知太陽能電池結構之另一示意圖，其中該太陽能電池2係由下而上包括一背基板98、一反應單元(active body)90、一陶金屬層(cermet layer)84、一透明導電薄膜82以及一透明基板80，其中該反應單元90包含一第一吸收單元92、一穿透接面94以及一第二吸收單元96。該太陽能電池2係利用第一吸收單元92與第二吸收單元96串聯堆疊以及該穿透接面94為陶金材料(cermet)來形成第一吸收單元92與第二吸收單元96之間的光路徑，以增加光能轉換率。Referring to the second figure, another schematic diagram of a conventional solar cell structure, wherein the solar cell 2 includes a back substrate 98, an active body 90, and a cermet layer 84 from bottom to top. A transparent conductive film 82 and a transparent substrate 80, wherein the reaction unit 90 includes a first absorption unit 92, a penetration surface 94, and a second absorption unit 96. The solar cell 2 is stacked in series with the first absorption unit 92 and the second absorption unit 96 and the penetration surface 94 is a cermet to form light between the first absorption unit 92 and the second absorption unit 96. Path to increase the conversion rate of light energy.
本發明之主要目的在提供一種太陽能電池結構，該太陽能電池係由下而上包括一基板、一前透明導電氧化(Front TCO)層、一主吸收層、一背透明導電氧化層(Back TCO)以及一金屬薄膜層，其中該背透明導電氧化層具有一粗糙上表面。The main object of the present invention is to provide a solar cell structure comprising a substrate, a front transparent conductive oxide (Front TCO) layer, a main absorption layer, and a back transparent conductive oxide layer (Back TCO) from bottom to top. And a metal thin film layer, wherein the back transparent conductive oxide layer has a rough upper surface.
本發明之另一目的在提供一種太陽能電池結構，該太陽能電池係由下而上包括一基板、一前透明導電氧化層、至少一第一吸收層、至少一介面層、至少一第二吸收層、一背透明導電氧化層以及一金屬薄膜層，其中該介面層具有一粗糙上表面。Another object of the present invention is to provide a solar cell structure comprising a substrate, a front transparent conductive oxide layer, at least one first absorption layer, at least one interface layer, and at least a second absorption layer from bottom to top. a back transparent conductive oxide layer and a metal thin film layer, wherein the interface layer has a rough upper surface.
在本發明的太陽能電池結構中，由於背透明導電氧化層或介面層上具有一粗糙上表面，該粗糙上表面有助於光的散射並可增加光的吸收率，提升太陽能電池效率。In the solar cell structure of the present invention, since the back transparent conductive oxide layer or the interface layer has a rough upper surface, the rough upper surface contributes to light scattering and can increase light absorption rate, thereby improving solar cell efficiency.
以下配合圖式及元件符號對本發明之實施方式做更詳細的說明，俾使熟習該項技藝者在研讀本說明書後能據以實施。The embodiments of the present invention will be described in more detail below with reference to the drawings and the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;
參閱第三圖，本發明第一實施例之太陽能電池結構示意圖，並參閱第四圖，本發明之粗糙表面示意圖，該太陽能電池3係包括一基板10、一前透明導電氧化層15、一主吸收層20、一背透明導電氧化層25以及一金屬薄膜層35，而該基板10、前透明導電氧化層15、主吸收層20、背透明導電氧化層25係依序由下往上堆疊，其中該背透明導電氧化層25具有一粗糙上表面30，該粗糙上表面30可經由乾蝕刻(dry ething)處理來形成，該粗糙上表面30具有複數個凸起30a，在該等凸起30a的最高點之間皆具有一間距d，該等凸起30a中兩相鄰凸起30a之間的最低點與該等凸起30a中兩相鄰凸起30a的最高點相連線形成一夾角θ，其中該間距d為200nm以下以及該夾角θ為30度~150度，而該金屬薄膜層35則堆疊於該粗糙上表面30上。Referring to the third embodiment, a schematic diagram of a solar cell structure according to a first embodiment of the present invention, and referring to a fourth figure, a schematic diagram of a rough surface of the present invention, the solar cell 3 includes a substrate 10, a front transparent conductive oxide layer 15, and a main The absorbing layer 20, a back transparent conductive oxide layer 25 and a metal thin film layer 35, and the substrate 10, the front transparent conductive oxide layer 15, the main absorbing layer 20, and the back transparent conductive oxide layer 25 are sequentially stacked from bottom to top. Wherein the back transparent conductive oxide layer 25 has a rough upper surface 30, which can be formed by a dry ething process having a plurality of protrusions 30a at the protrusions 30a Between the highest points, there is a spacing d, and the lowest point between the two adjacent protrusions 30a of the protrusions 30a forms an angle with the line connecting the highest points of the two adjacent protrusions 30a of the protrusions 30a. θ, wherein the pitch d is 200 nm or less and the included angle θ is 30 degrees to 150 degrees, and the metal thin film layer 35 is stacked on the rough upper surface 30.
該主吸收層係包括至少一吸收層，而該至少一吸收層(圖中未顯示)可為串疊型(Tandem)太陽能電池、三接面(Triple-junction)太陽能電池以及多接面(Multi-junction)太陽能電池的其中之一。The main absorbing layer includes at least one absorbing layer, and the at least one absorbing layer (not shown) may be a tandem solar cell, a triple-junction solar cell, and a multi-junction (Multi -junction) One of the solar cells.
該前透明導電氧化層15以及背透明導電氧化層25可為氧化鋅基(ZnO-based)之材料，該基板可為玻璃基板，該乾蝕刻處理可為一氫電漿(H2 Plasma)處理，以及該金屬薄膜層35可為銀。The front transparent conductive oxide layer 15 and the back transparent conductive oxide layer 25 may be a ZnO-based material, the substrate may be a glass substrate, and the dry etching process may be a hydrogen plasma treatment (H 2 Plasma) treatment. And the metal thin film layer 35 may be silver.
參閱第五圖，本發明第二實施例之太陽能電池結構示意圖，該太陽能電池9係包括一基板10、一前透明導電氧化層15、至少一第一吸收層(如圖中元件符號22)、至少一介面層(如圖中元件符號23)、至少一第二吸收層(如圖中元件符號24)、一背透明導電氧化層25以及一金屬薄膜層35。Referring to FIG. 5, a schematic diagram of a solar cell structure according to a second embodiment of the present invention includes a substrate 10, a front transparent conductive oxide layer 15, and at least a first absorption layer (e.g., symbol 22 in the figure). At least one interface layer (e.g., component symbol 23 in the figure), at least one second absorption layer (e.g., component symbol 24 in the figure), a back transparent conductive oxide layer 25, and a metal thin film layer 35.
要注意的事，第一吸收層、介面層以及第二吸收層皆可為一層或一層以上，然而在本實施例以及第五圖中為了方便說明僅列出一層第一吸收層、一層介面層以及一層第二吸收層。It should be noted that the first absorption layer, the interface layer and the second absorption layer may each be one layer or more. However, in the present embodiment and the fifth figure, only one layer of the first absorption layer and one layer of the interface layer are listed for convenience of description. And a second absorption layer.
該基板10、前透明導電氧化層15、第一吸收層22以及介面層23係依序由下往上堆疊，其中該介面層23具有一粗糙上表面32，該粗糙上表面32可經由乾蝕刻(dry ething)處理來形成，該粗糙上表面32具有複數個凸起(圖中未顯示)，在該等凸起的最高點之間皆具有一間距(圖中未顯示)，該等凸起中兩相鄰凸起之間的最低點與該等凸起中兩相鄰凸起的最高點相連線形成一夾角(圖中未顯示)，其中該間距為200nm以下以及該夾角為30度~150度，再於該粗糙上表面32依序由下而上堆疊該第二吸收層24、背透明導電氧化層25以及金屬薄膜層35。The substrate 10, the front transparent conductive oxide layer 15, the first absorption layer 22, and the interface layer 23 are sequentially stacked from bottom to top, wherein the interface layer 23 has a rough upper surface 32, which can be dry etched. Formed by a dry ething process having a plurality of protrusions (not shown) having a pitch (not shown) between the highest points of the protrusions, the protrusions The lowest point between two adjacent protrusions forms an angle (not shown) with the highest point of the two adjacent protrusions in the protrusions, wherein the spacing is below 200 nm and the angle is 30 degrees. The second absorbing layer 24, the back transparent conductive oxide layer 25, and the metal thin film layer 35 are sequentially stacked from bottom to top on the rough upper surface 32.
該前透明導電氧化層15以及背透明導電氧化層25可為氧化鋅基(ZnO-based)之材料，該基板可為玻璃基板，該乾蝕刻處理為一氫電漿(H2 Plasma)處理，以及該金屬薄膜層35可為銀。The front transparent conductive oxide layer 15 and the back transparent conductive oxide layer 25 may be a ZnO-based material, the substrate may be a glass substrate, and the dry etching treatment is a hydrogen plasma (H 2 Plasma) treatment. And the metal thin film layer 35 may be silver.
該第一吸收層22以及第二吸收層24皆可為I-III-VI族化合物、非晶矽(a-Si)、非晶矽鍺(SiGe)或結晶矽(uc-Si)，該I-III-VI族化合物包括銅銦鎵硒(CIGS)、銅銦硒(CGS)、銅鎵硒(CIS)以及銀銦鎵硒(AIGS)吸收層的其中之一。The first absorption layer 22 and the second absorption layer 24 may each be an I-III-VI compound, an amorphous germanium (a-Si), an amorphous germanium (SiGe) or a crystalline germanium (uc-Si). The -III-VI compound includes one of copper indium gallium selenide (CIGS), copper indium selenide (CGS), copper gallium selenide (CIS), and silver indium gallium selenide (AIGS) absorber layers.
在本發明的太陽能電池結構中，係以在背透明導電氧化層或介面層上形成一粗糙上表面，該粗糙上表面有助於光的散射並可增加光的吸收率，提升太陽能電池效率。In the solar cell structure of the present invention, a rough upper surface is formed on the back transparent conductive oxide layer or the interface layer, the rough upper surface contributes to light scattering and increases light absorption rate, and improves solar cell efficiency.
1．．．太陽能電池1. . . Solar battery
2．．．太陽能電池2. . . Solar battery
3．．．太陽能電池3. . . Solar battery
9．．．太陽能電池9. . . Solar battery
10．．．基板10. . . Substrate
15．．．前透明導電氧化層15. . . Front transparent conductive oxide layer
20．．．主吸收層20. . . Main absorption layer
22．．．第一吸收層twenty two. . . First absorption layer
23．．．介面層twenty three. . . Interface layer
24．．．第二吸收層twenty four. . . Second absorption layer
25．．．背透明導電氧化層25. . . Back transparent conductive oxide layer
30．．．粗糙上表面30. . . Rough upper surface
30a．．．凸起30a. . . Bulge
32．．．粗糙上表面32. . . Rough upper surface
35．．．金屬薄膜層35. . . Metal film layer
50．．．基板50. . . Substrate
55．．．第一反射金屬層55. . . First reflective metal layer
60．．．透明導電層60. . . Transparent conductive layer
65．．．第二反射金屬層65. . . Second reflective metal layer
70．．．半導體薄膜層70. . . Semiconductor thin film layer
75．．．前電極75. . . Front electrode
80．．．透明基板80. . . Transparent substrate
82．．．透明導電薄膜82. . . Transparent conductive film
84．．．陶金屬層84. . . Ceramic metal layer
86．．．第一接線86. . . First wiring
90．．．反應單元90. . . Reaction unit
92．．．第一吸收單元92. . . First absorption unit
94．．．穿透接面94. . . Penetrating junction
96．．．第二吸收單元96. . . Second absorption unit
98．．．背基板98. . . Back substrate
99．．．第二接線99. . . Second wiring
L．．．光線L. . . Light
L1．．．光線L1. . . Light
d．．．間距d. . . spacing
θ．．．角度θ. . . angle
第一圖為習知太陽能電池結構示意圖。The first figure is a schematic diagram of a conventional solar cell structure.
第二圖為習知太陽能電池結構之另一示意圖。The second figure is another schematic diagram of a conventional solar cell structure.
第三圖為本發明第一實施例之太陽能電池結構示意圖。The third figure is a schematic structural view of a solar cell according to a first embodiment of the present invention.
第四圖為本發明之粗糙表面示意圖。The fourth figure is a schematic view of the rough surface of the present invention.
第五圖為本發明第二實施例之太陽能電池結構示意圖。Figure 5 is a schematic view showing the structure of a solar cell according to a second embodiment of the present invention.
3．．．太陽能電池3. . . Solar battery
10．．．基板10. . . Substrate
15．．．前透明導電氧化層15. . . Front transparent conductive oxide layer
20．．．主吸收層20. . . Main absorption layer
25．．．背透明導電氧化層25. . . Back transparent conductive oxide layer
30．．．粗糙上表面30. . . Rough upper surface
35．．．金屬薄膜層35. . . Metal film layer
Claims (16)
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| TWI395337B true TWI395337B (en) | 2013-05-01 |
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2009
- 2009-07-21 TW TW98124574A patent/TWI395337B/en not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4479028A (en) * | 1982-02-15 | 1984-10-23 | Director General Of Agency Of Industrial Science And Technology | Amorphous solar cell |
| EP1653519A1 (en) * | 2004-10-29 | 2006-05-03 | Mitsubishi Heavy Industries, Ltd. | Photoelectric conversion device |
| TW200826309A (en) * | 2006-12-08 | 2008-06-16 | Higher Way Electronic Co Ltd | Cascade solar cell with amorphous silicon-based solar cell |
| TW200910622A (en) * | 2007-08-16 | 2009-03-01 | Jusung Eng Co Ltd | Thin film type solar cell and method for manufacturing the same |
| TW200924202A (en) * | 2007-11-30 | 2009-06-01 | Delta Electronics Inc | Solar cell and manufacturing method thereof |
| TWM345351U (en) * | 2008-07-11 | 2008-11-21 | Contrel Technology Co Ltd | Solar electricity structure |
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|---|---|
| TW201104880A (en) | 2011-02-01 |
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