TWI381513B - Wafer stack package structure and its preparation method - Google Patents
Wafer stack package structure and its preparation method Download PDFInfo
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- TWI381513B TWI381513B TW099100334A TW99100334A TWI381513B TW I381513 B TWI381513 B TW I381513B TW 099100334 A TW099100334 A TW 099100334A TW 99100334 A TW99100334 A TW 99100334A TW I381513 B TWI381513 B TW I381513B
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- wafer
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- H10W72/877—
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- H10W72/884—
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- H10W90/724—
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- H10W90/754—
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Description
本發明係有關一種晶片堆疊封裝結構及製法,特別是一種可降低成本及簡化製程之晶片堆疊封裝結構及其製法。The invention relates to a wafer stacking package structure and a manufacturing method, in particular to a wafer stacking package structure and a manufacturing method thereof which can reduce the cost and simplify the process.
立體式封裝目前大致有兩種方式,分別是封裝上封裝(Package on Package,PoP)以及封裝內封裝(Package in Package,PiP)。其中PoP封裝是一種很典型的立體式封裝,是藉由將獨立的兩個封裝體經封裝與測試後再以表面黏著方式疊合。There are roughly two ways to install a three-dimensional package, namely, package on package (PoP) and package in package (PiP). The PoP package is a typical three-dimensional package, which is formed by attaching and testing two independent packages to be surface-bonded.
然而,製作現行PoP封裝結構須先將個別的封裝體完成後,再進行植球與堆疊組合,費時費工。且疊合後的封裝結構厚度大,實無法符合現今對於電子產品輕薄短小的需求。However, the current PoP package structure must be completed after the individual packages are completed, and then the ball placement and stacking are combined, which is time-consuming and labor-intensive. Moreover, the thickness of the package structure after lamination is large, which cannot meet the current demand for light and thin electronic products.
為了解決上述問題,本發明目的之一係在提供一種晶片堆疊封裝結構及其製法,利用在上層晶片之底面形成一凹槽結構以罩覆下層覆晶晶片,如此堆疊結構,可有效降低封裝體厚度以及基板與導電球之使用成本。In order to solve the above problems, one of the objects of the present invention is to provide a wafer stack package structure and a method for fabricating the same, which utilizes a recess structure on the bottom surface of the upper wafer to cover the underlying flip chip, so that the stacked structure can effectively reduce the package. Thickness and cost of use of the substrate and conductive balls.
為了達到上述目的,本發明之一實施例提供一種晶片堆疊封裝結構包括:一基板;一覆晶晶片設置於基板上,並與基板電性連接;一晶片其一底面具有一凹槽用以罩設覆晶晶片上,其中一間隔構件設置於晶片與覆晶晶片之間,用以包覆覆晶晶片及部分基板並將晶片固設於覆晶晶片上;以及一電接元件電性連接晶片之主動面與基板。In order to achieve the above object, an embodiment of the present invention provides a wafer stack package structure including: a substrate; a flip chip is disposed on the substrate and electrically connected to the substrate; and a bottom surface of the wafer has a recess for the cover Providing a flip chip, wherein a spacer member is disposed between the wafer and the flip chip to cover the flip chip and a portion of the substrate and to fix the wafer on the flip chip; and an electrical component is electrically connected to the wafer The active surface and the substrate.
為了達到上述目的,本發明之一實施例提供一種晶片堆疊封裝結構之製法,包括:提供一基板。提供一覆晶晶片設置於基板上並與基板電性連接。提供一晶片,其中晶片底面具有一凹槽。設置一間隔構件於覆晶晶片之上表面。堆疊晶片於覆晶晶片上,其中凹槽係罩設於覆晶晶片外。施壓晶片使間隔構件充滿於凹槽內,藉以包覆覆晶晶片與部分基板。及利用一電接元件電性連接晶片與基板。In order to achieve the above object, an embodiment of the present invention provides a method for fabricating a wafer stack package structure, comprising: providing a substrate. A flip chip is disposed on the substrate and electrically connected to the substrate. A wafer is provided in which the bottom surface of the wafer has a recess. A spacer member is disposed on the upper surface of the flip chip. The stacked wafers are stacked on a flip chip, wherein the recesses are disposed outside the flip chip. The wafer is pressed to fill the spacer member in the recess to cover the flip chip and a portion of the substrate. And electrically connecting the wafer and the substrate by using an electrical component.
其詳細說明如下,所述較佳實施例僅做一說明非用以限定本發明。The detailed description is as follows, and the preferred embodiment is not intended to limit the invention.
請先參考圖1A到圖1D,圖1A到圖1D為本發明一實施例之晶片堆疊封裝結構之製法的結構剖視示意圖。首先,請參考圖1A,提供一基板10。於基板上10設置一覆晶晶片20,且基板10與覆晶晶片20電性連接。接著,請參考圖1B,利用點膠或塗佈技術設置一間隔構件30於覆晶晶片20之上表面,其中間隔構件30可為環氧樹脂、B階固化膠或其他合適之塗層材料。再來,提供一晶片40,如圖1C所示,晶片40之底面具有一凹槽42。接著,堆疊晶片40於覆晶晶片20上,使凹槽42罩設於覆晶晶片20上。對晶片40施以一壓力使間隔構件30充滿於凹槽42內,以包覆覆晶晶片20與部分基板10,並使晶片40黏固於基板10上,且電性絕緣晶片40與覆晶晶片20。接著如圖1D所示,對晶片40進行打線作業,利用一電接元件50電性連接晶片40與基板10。最後,以一封裝膠體60(例如由環氧樹脂所構成)包覆晶片40、電接元件50、及部分基板10,以形成如圖1E中所示之晶片堆疊封裝結構。Please refer to FIG. 1A to FIG. 1D. FIG. 1A to FIG. 1D are schematic cross-sectional views showing a manufacturing method of a wafer stack package structure according to an embodiment of the present invention. First, referring to FIG. 1A, a substrate 10 is provided. A flip chip 20 is disposed on the substrate 10, and the substrate 10 is electrically connected to the flip chip 20. Next, referring to FIG. 1B, a spacer member 30 is disposed on the upper surface of the flip chip 20 by a dispensing or coating technique, wherein the spacer member 30 may be an epoxy resin, a B-stage cured adhesive or other suitable coating material. Further, a wafer 40 is provided. As shown in FIG. 1C, the bottom surface of the wafer 40 has a recess 42. Next, the wafer 40 is stacked on the flip chip 20 such that the recess 42 is overlaid on the flip chip 20. Applying a pressure to the wafer 40 fills the spacer member 30 in the recess 42 to cover the flip chip 20 and a portion of the substrate 10, and adhere the wafer 40 to the substrate 10, and electrically insulating the wafer 40 and flip chip. Wafer 20. Next, as shown in FIG. 1D, the wafer 40 is wire-bonded, and the wafer 40 and the substrate 10 are electrically connected by an electrical component 50. Finally, the wafer 40, the electrical component 50, and a portion of the substrate 10 are coated with an encapsulant 60 (eg, comprised of epoxy) to form a wafer stack package structure as shown in FIG. 1E.
接續上述,如圖1E所示,更包括設置複數個導電球70於基板10下,使晶片堆疊封裝結構可電性連接於外界裝置上。Following the above, as shown in FIG. 1E, a plurality of conductive balls 70 are disposed under the substrate 10 to electrically connect the wafer stack package structure to the external device.
請繼續參考圖1E,完成後的晶片堆疊封裝結構包括:一基板10;一覆晶晶片20設置於基板10上,並與基板10電性連接;一晶片40其一底面具有一凹槽42用以罩設覆晶晶片20,其中一間隔構件30設置於晶片40與覆晶晶片20之間,以包覆覆晶晶片20及部分基板10,並使晶片40固設於覆晶晶片20上;以及一電接元件50電性連接晶片40與基板10。更包括一封裝膠體60包覆晶片40、電接元件50與部分基板10。以及複數個導電球70設置於基板10下以方便晶片堆疊封裝結構與外界裝置電性連接。Continuing to refer to FIG. 1E , the completed wafer stack package structure includes: a substrate 10; a flip chip 20 is disposed on the substrate 10 and electrically connected to the substrate 10; and a wafer 40 has a groove 42 on a bottom surface thereof. The flip chip 20 is covered, and a spacer member 30 is disposed between the wafer 40 and the flip chip 20 to cover the flip chip 20 and a portion of the substrate 10, and the wafer 40 is fixed on the flip chip 20; And an electrical connection component 50 electrically connects the wafer 40 and the substrate 10. Furthermore, an encapsulant 60 covers the wafer 40, the electrical component 50 and a portion of the substrate 10. And a plurality of conductive balls 70 are disposed under the substrate 10 to facilitate electrical connection between the wafer stack package structure and the external device.
於又一實施例中,如圖2A所示,上層晶片40的凹槽42大小係以可覆蓋下層覆晶晶片20之大小為前提,且形狀不以封閉的槽為限,凹槽42更可以具有至少一開口43,如圖2B、圖2C、圖2D、圖2E、圖2F所示。In another embodiment, as shown in FIG. 2A, the size of the groove 42 of the upper wafer 40 is premised on covering the size of the underlying flip chip 20, and the shape is not limited to the closed groove, and the groove 42 is more There is at least one opening 43, as shown in FIGS. 2B, 2C, 2D, 2E, and 2F.
本發明一實施例利用於上層晶片之底面形成一凹槽,凹槽下的空間可容納封裝體所需之其他晶片(於此實施例中,為一覆晶晶片,但不為限),有效利用空間,以解決PoP封裝結構總高度過厚之問題。此外,亦可減少當多個封裝體堆疊時,基板與導電球的使用,大大降低生產成本。再者,簡化製程後,亦可改善PoP封裝結構中上層封裝體與下層封裝體導電球對位的問題。In one embodiment of the present invention, a recess is formed on the bottom surface of the upper wafer, and the space under the recess can accommodate other wafers required for the package (in this embodiment, a flip chip, but not limited), which is effective. Use space to solve the problem that the total height of the PoP package structure is too thick. In addition, the use of the substrate and the conductive ball when a plurality of packages are stacked can be reduced, which greatly reduces the production cost. Furthermore, after simplifying the process, the problem of the alignment of the upper package and the lower package conductive ball in the PoP package structure can be improved.
綜合上述,本發明一實施例之一種晶片堆疊封裝結構及其製法,利用在上層晶片之底面形成一凹槽結構以罩覆下層覆晶晶片,如此堆疊結構,可有效降低封裝體厚度以及基板與導電球之使用成本。In summary, a wafer stack package structure and a method for fabricating the same according to an embodiment of the present invention utilize a recess structure formed on a bottom surface of an upper wafer to cover a lower layer flip chip. The stacked structure can effectively reduce the thickness of the package and the substrate and the substrate. The cost of using conductive balls.
以上所述之實施例僅係為說明本發明之技術思想及特點,其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施,當不能以之限定本發明之專利範圍,即大凡依本發明所揭示之精神所作之均等變化或修飾,仍應涵蓋在本發明之專利範圍內。The embodiments described above are merely illustrative of the technical spirit and the features of the present invention, and the objects of the present invention can be understood by those skilled in the art, and the scope of the present invention cannot be limited thereto. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention.
10...基板10. . . Substrate
20...覆晶晶片20. . . Flip chip
30...間隔構件30. . . Spacer member
40...晶片40. . . Wafer
42...凹槽42. . . Groove
43...開口43. . . Opening
50...電接元件50. . . Electrical component
60...封裝膠體60. . . Encapsulant
70...導電球70. . . Conductive ball
圖1A、圖1B、圖1C、圖1D與圖1E為本發明一實施例之晶片堆疊封裝結構之製法的結構剖視示意圖。1A, 1B, 1C, 1D, and 1E are schematic cross-sectional views showing a method of fabricating a wafer stack package structure according to an embodiment of the present invention.
圖2A、圖2B、圖2C、圖2D、圖2E與圖2F為本發明一實施例之凹槽的結構示意圖。2A, 2B, 2C, 2D, 2E and 2F are schematic structural views of a groove according to an embodiment of the present invention.
10...基板10. . . Substrate
20...覆晶晶片20. . . Flip chip
30...間隔構件30. . . Spacer member
40...晶片40. . . Wafer
42...凹槽42. . . Groove
50...電接元件50. . . Electrical component
60...封裝膠體60. . . Encapsulant
70...導電球70. . . Conductive ball
Claims (10)
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| TW099100334A TWI381513B (en) | 2010-01-08 | 2010-01-08 | Wafer stack package structure and its preparation method |
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| TW099100334A TWI381513B (en) | 2010-01-08 | 2010-01-08 | Wafer stack package structure and its preparation method |
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| TW201125100A TW201125100A (en) | 2011-07-16 |
| TWI381513B true TWI381513B (en) | 2013-01-01 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6084297A (en) * | 1998-09-03 | 2000-07-04 | Micron Technology, Inc. | Cavity ball grid array apparatus |
| US20040090756A1 (en) * | 2002-11-07 | 2004-05-13 | Kwun-Yo Ho | Chip packaging structure and manufacturing process thereof |
| US6893897B2 (en) * | 2002-09-11 | 2005-05-17 | International Business Machines Corporation | Stacked package for integrated circuits |
| US20070069371A1 (en) * | 2005-09-29 | 2007-03-29 | United Test And Assembly Center Ltd. | Cavity chip package |
| US20090051023A1 (en) * | 2007-01-05 | 2009-02-26 | Samsung Electronics Co., Ltd. | Stack package and method of fabricating the same |
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2010
- 2010-01-08 TW TW099100334A patent/TWI381513B/en not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6084297A (en) * | 1998-09-03 | 2000-07-04 | Micron Technology, Inc. | Cavity ball grid array apparatus |
| US6893897B2 (en) * | 2002-09-11 | 2005-05-17 | International Business Machines Corporation | Stacked package for integrated circuits |
| US20040090756A1 (en) * | 2002-11-07 | 2004-05-13 | Kwun-Yo Ho | Chip packaging structure and manufacturing process thereof |
| US20070069371A1 (en) * | 2005-09-29 | 2007-03-29 | United Test And Assembly Center Ltd. | Cavity chip package |
| US20090051023A1 (en) * | 2007-01-05 | 2009-02-26 | Samsung Electronics Co., Ltd. | Stack package and method of fabricating the same |
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| TW201125100A (en) | 2011-07-16 |
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