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TWI349381B - Light-emitting diode and manufacturing method thereof - Google Patents

Light-emitting diode and manufacturing method thereof

Info

Publication number
TWI349381B
TWI349381B TW096128760A TW96128760A TWI349381B TW I349381 B TWI349381 B TW I349381B TW 096128760 A TW096128760 A TW 096128760A TW 96128760 A TW96128760 A TW 96128760A TW I349381 B TWI349381 B TW I349381B
Authority
TW
Taiwan
Prior art keywords
manufacturing
light
emitting diode
diode
emitting
Prior art date
Application number
TW096128760A
Other languages
English (en)
Other versions
TW200908369A (en
Inventor
Kuo Yuin Li
Original Assignee
Chi Mei Lighting Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chi Mei Lighting Tech Corp filed Critical Chi Mei Lighting Tech Corp
Priority to TW096128760A priority Critical patent/TWI349381B/zh
Priority to US11/869,605 priority patent/US8497518B2/en
Publication of TW200908369A publication Critical patent/TW200908369A/zh
Application granted granted Critical
Publication of TWI349381B publication Critical patent/TWI349381B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
TW096128760A 2007-08-03 2007-08-03 Light-emitting diode and manufacturing method thereof TWI349381B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW096128760A TWI349381B (en) 2007-08-03 2007-08-03 Light-emitting diode and manufacturing method thereof
US11/869,605 US8497518B2 (en) 2007-08-03 2007-10-09 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096128760A TWI349381B (en) 2007-08-03 2007-08-03 Light-emitting diode and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW200908369A TW200908369A (en) 2009-02-16
TWI349381B true TWI349381B (en) 2011-09-21

Family

ID=40337288

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096128760A TWI349381B (en) 2007-08-03 2007-08-03 Light-emitting diode and manufacturing method thereof

Country Status (2)

Country Link
US (1) US8497518B2 (zh)
TW (1) TWI349381B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI572060B (zh) * 2015-11-20 2017-02-21 國立中興大學 發光二極體及其製作方法
TWI757292B (zh) * 2016-06-15 2022-03-11 日商迪思科股份有限公司 發光二極體晶片之製造方法

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CN101276863B (zh) * 2007-03-29 2011-02-09 晶元光电股份有限公司 发光二极管及其制造方法
JP5167974B2 (ja) * 2008-06-16 2013-03-21 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
TWI380481B (en) * 2009-01-13 2012-12-21 Huga Optotech Inc Light-emitting diode with high light-emitting efficiency
TWI399871B (zh) * 2009-02-03 2013-06-21 Huga Optotech Inc 光電元件及其形成方法
US8207547B2 (en) 2009-06-10 2012-06-26 Brudgelux, Inc. Thin-film LED with P and N contacts electrically isolated from the substrate
JP4881492B2 (ja) * 2009-09-17 2012-02-22 株式会社東芝 半導体発光素子
KR100999684B1 (ko) * 2009-10-21 2010-12-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
TWI531088B (zh) * 2009-11-13 2016-04-21 首爾偉傲世有限公司 具有分散式布拉格反射器的發光二極體晶片
US8963178B2 (en) 2009-11-13 2015-02-24 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector and method of fabricating the same
US20110147796A1 (en) * 2009-12-17 2011-06-23 Infineon Technologies Austria Ag Semiconductor device with metal carrier and manufacturing method
CN101859860B (zh) * 2010-05-04 2013-04-10 厦门市三安光电科技有限公司 具有双反射层的铝镓铟磷系发光二极管的制备方法
US9142715B2 (en) 2010-06-24 2015-09-22 Seoul Viosys Co., Ltd. Light emitting diode
CN103053036B (zh) * 2010-07-28 2015-11-25 首尔伟傲世有限公司 具有分布式布拉格反射器的发光二极管
CN103098551A (zh) * 2010-09-01 2013-05-08 昭和电工株式会社 电致发光元件、显示装置以及照明装置
TWI411133B (zh) * 2010-10-22 2013-10-01 Aceplux Optotech Inc High light extraction rate of light emitting diodes and their production methods
FR2967813B1 (fr) 2010-11-18 2013-10-04 Soitec Silicon On Insulator Procédé de réalisation d'une structure a couche métallique enterrée
TWI483431B (zh) * 2011-04-01 2015-05-01 Huga Optotech Inc 半導體發光結構
US8546829B2 (en) * 2011-07-19 2013-10-01 Phostek, Inc. Posts in glue layer for group-III nitride LEDs
CN106299074B (zh) * 2015-06-23 2020-09-04 晶元光电股份有限公司 半导体发光元件
CN109860364B (zh) * 2017-08-30 2020-09-01 天津三安光电有限公司 发光二极管
TWI832455B (zh) * 2022-09-29 2024-02-11 王曉靁 具有介電質邊框的微發光二極體及其製備方法
WO2025025067A1 (en) * 2023-07-31 2025-02-06 Jade Bird Display (shanghai) Limited Micro led, micro led display panel, and epitaxial structure

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US6015979A (en) * 1997-08-29 2000-01-18 Kabushiki Kaisha Toshiba Nitride-based semiconductor element and method for manufacturing the same
US6841800B2 (en) * 1997-12-26 2005-01-11 Matsushita Electric Industrial Co., Ltd. Light-emitting device comprising a gallium-nitride-group compound-semiconductor
JP2001176805A (ja) * 1999-12-16 2001-06-29 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物の結晶製造方法、窒化物系ｉｉｉ−ｖ族化合物結晶基板、窒化物系ｉｉｉ−ｖ族化合物結晶膜およびデバイスの製造方法
JP2001223384A (ja) 2000-02-08 2001-08-17 Toshiba Corp 半導体発光素子
US6693352B1 (en) * 2000-06-05 2004-02-17 Emitronix Inc. Contact structure for group III-V semiconductor devices and method of producing the same
TW480752B (en) * 2001-04-09 2002-03-21 United Epitaxy Co Ltd Structure and manufacturing method for light emitting diode
TWI223460B (en) * 2003-09-23 2004-11-01 United Epitaxy Co Ltd Light emitting diodes in series connection and method of making the same
US6982819B2 (en) * 2004-05-10 2006-01-03 Ciencia, Inc. Electro-optic array interface
JP5010108B2 (ja) * 2005-03-25 2012-08-29 株式会社沖データ 半導体複合装置、プリントヘッド、及びそれを用いた画像形成装置
US7335924B2 (en) * 2005-07-12 2008-02-26 Visual Photonics Epitaxy Co., Ltd. High-brightness light emitting diode having reflective layer
US20070018186A1 (en) * 2005-07-19 2007-01-25 Lg Chem, Ltd. Light emitting diode device having advanced light extraction efficiency and preparation method thereof
JP4462249B2 (ja) * 2005-09-22 2010-05-12 ソニー株式会社 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法
JP2007109793A (ja) 2005-10-12 2007-04-26 Sony Corp 半導体発光素子および光散乱基板

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI572060B (zh) * 2015-11-20 2017-02-21 國立中興大學 發光二極體及其製作方法
TWI757292B (zh) * 2016-06-15 2022-03-11 日商迪思科股份有限公司 發光二極體晶片之製造方法

Also Published As

Publication number Publication date
US8497518B2 (en) 2013-07-30
US20090032830A1 (en) 2009-02-05
TW200908369A (en) 2009-02-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees