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PL2272105T3 - Chip diody elektroluminescencyjnej - Google Patents

Chip diody elektroluminescencyjnej

Info

Publication number
PL2272105T3
PL2272105T3 PL09737749.3T PL09737749T PL2272105T3 PL 2272105 T3 PL2272105 T3 PL 2272105T3 PL 09737749 T PL09737749 T PL 09737749T PL 2272105 T3 PL2272105 T3 PL 2272105T3
Authority
PL
Poland
Prior art keywords
light
emitting diode
diode chip
chip
emitting
Prior art date
Application number
PL09737749.3T
Other languages
English (en)
Inventor
Matthias Sabathil
Lutz Höppel
Andreas Weimar
Karl Engl
Johannes Baur
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of PL2272105T3 publication Critical patent/PL2272105T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
PL09737749.3T 2008-04-30 2009-04-28 Chip diody elektroluminescencyjnej PL2272105T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008021675 2008-04-30
DE102008035900A DE102008035900A1 (de) 2008-04-30 2008-07-31 Leuchtdiodenchip

Publications (1)

Publication Number Publication Date
PL2272105T3 true PL2272105T3 (pl) 2016-09-30

Family

ID=41131061

Family Applications (1)

Application Number Title Priority Date Filing Date
PL09737749.3T PL2272105T3 (pl) 2008-04-30 2009-04-28 Chip diody elektroluminescencyjnej

Country Status (7)

Country Link
US (1) US8530923B2 (pl)
EP (2) EP3032593B1 (pl)
KR (2) KR101648592B1 (pl)
CN (2) CN104576871B (pl)
DE (1) DE102008035900A1 (pl)
PL (1) PL2272105T3 (pl)
WO (1) WO2009132641A1 (pl)

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US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
EP2333852B1 (en) * 2009-12-09 2019-03-27 LG Innotek Co., Ltd. Light emitting device and light emitting package
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US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US8764224B2 (en) 2010-08-12 2014-07-01 Cree, Inc. Luminaire with distributed LED sources
DE102010045390B4 (de) 2010-09-15 2025-07-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronisches Halbleiterbauteils
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US8680556B2 (en) 2011-03-24 2014-03-25 Cree, Inc. Composite high reflectivity layer
US8686429B2 (en) 2011-06-24 2014-04-01 Cree, Inc. LED structure with enhanced mirror reflectivity
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
DE102012108763B4 (de) * 2012-09-18 2023-02-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer halbleiterchip und lichtquelle mit dem optoelektronischen halbleiterchip
JP6595801B2 (ja) * 2014-05-30 2019-10-23 エルジー イノテック カンパニー リミテッド 発光素子
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
DE102015111573A1 (de) 2015-07-16 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102015120323A1 (de) 2015-11-24 2017-05-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip mit einer reflektierenden Schichtenfolge
DE102016104965A1 (de) * 2016-03-17 2017-09-21 Osram Opto Semiconductors Gmbh Lichtemittierender Halbleiterchip und Verfahren zur Herstellung eines lichtemittierenden Halbleiterchips
DE102017114467A1 (de) * 2017-06-29 2019-01-03 Osram Opto Semiconductors Gmbh Halbleiterchip mit transparenter Stromaufweitungsschicht
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US20200365769A1 (en) 2019-05-16 2020-11-19 Epistar Corporation Semiconductor device
DE102019112949A1 (de) * 2019-05-16 2020-11-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und strahlungsemittierendes Bauteil
DE102019126026A1 (de) * 2019-09-26 2021-04-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterchip
US11296266B2 (en) 2019-11-26 2022-04-05 Facebook Technologies, Llc LED array having transparent substrate with conductive layer for enhanced current spread
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Also Published As

Publication number Publication date
EP2272105B1 (de) 2016-04-06
EP2272105B9 (de) 2016-12-21
KR20160099719A (ko) 2016-08-22
EP3032593B1 (de) 2021-01-20
KR101743895B1 (ko) 2017-06-15
EP2272105A1 (de) 2011-01-12
DE102008035900A1 (de) 2009-11-05
CN104576871B (zh) 2018-02-16
EP3032593A1 (de) 2016-06-15
WO2009132641A1 (de) 2009-11-05
US8530923B2 (en) 2013-09-10
US20110114988A1 (en) 2011-05-19
KR20110027640A (ko) 2011-03-16
CN104576871A (zh) 2015-04-29
CN101971370A (zh) 2011-02-09
KR101648592B1 (ko) 2016-08-16

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