1295590· 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種藉由從喷嘴喷出處理液之同時掃描基 板，在基板的表面上塗佈處理液之基板處理裝置之技術。 較詳細而言，係關於一種於藉由喷嘴之掃描，為防止噴嘴 與異物（對象物）相干涉而高精確度地檢測對象物之技術。 【先前技術】 於液晶用玻璃角形基板、半導體晶圓、薄膜液晶用軟性 • 基板、光罩用基板、彩色濾光片用基板（以下僅簡稱為「基 板」）等之製程，使用在基板的表面上塗佈處理液之塗佈裝 置（基板處理裝置）。作為塗佈裝置，使用具有狹縫狀的喷出 部之狹縫喷嘴進行狹缝塗佈之狹縫塗佈器、或一旦實施上 述的狹縫塗佈之後旋轉基板之狹縫旋轉塗佈器等為所知。 在該塗佈裝置，由於在使狹缝喷嘴的前端和基板相接近 之狀悲，使狹縫喷嘴和基板相對移動而塗佈處理液，所以 在基板的表面異物附著，或在基板和載物台之間挟持異物 而成基板隆起狀態，因此產生與狹縫喷嘴的干涉，產生： (1) 狹縫喷嘴損傷 (2) 基板破裂或者使基板受傷 而成為塗佈不良的原因等[Technical Field] The present invention relates to a substrate processing apparatus which applies a processing liquid on a surface of a substrate by scanning a substrate while ejecting a processing liquid from a nozzle. More specifically, the present invention relates to a technique for detecting an object with high precision in order to prevent the nozzle from interfering with a foreign object (object) by scanning the nozzle. [Prior Art] The glass substrate for liquid crystal, the semiconductor wafer, the flexible substrate for thin film liquid crystal, the substrate for the mask, and the substrate for color filter (hereinafter simply referred to as "substrate") are used in the substrate. A coating device (substrate processing device) for applying a treatment liquid on the surface. As a coating device, a slit coater that performs slit coating using a slit nozzle having a slit-like discharge portion, or a slit spin coater that rotates a substrate after performing the above-described slit coating is used. Known. In the coating apparatus, since the slit nozzle and the substrate are relatively moved and the processing liquid is applied while the tip end of the slit nozzle is close to the substrate, foreign matter adheres to the surface of the substrate, or the substrate and the carrier are attached. When the substrate is held up between the stages, the substrate is raised, and interference with the slit nozzle occurs. (1) The slit nozzle is damaged (2) The substrate is broken or the substrate is injured, which causes the coating failure.
。該技術記 (3)因一邊拉拖異物一邊塗佈， 問題。 因此， 行異物檢： 涉物），而回避狹縫 I02712.doc 1295590 載在例如專利文獻1。 專利文獻1所記载之塗佈裝置藉由透過型的雷射感測器 (檢測透㉟來的雷射光之感測器）進行肖象物的檢_，在該雷 射感測Is檢測出對象物時，藉由強制結束塗佈處理，防止 狹縫噴嘴和對象物接觸。 圖12至圖15係為說明使用在專利文獻丨所記載之塗佈裝 置之透過型的雷射感測器1〇〇檢測對象物之原理的概念 圖。透過型的雷射感測器1〇〇係將由投光部1〇1所射出之雷 射光藉由在光軸上與投光部101向對向而配置的受光部1〇2 接受，根據其受光量檢測對象物的有無之感測器。 在雷射感測器100如圖12所示，在某些物體（對象物）存在 於光路上時，藉由該對象物在光路上遮蔽雷射光。因此， 如圖13所示，於受光部102之雷射光的受光量減少。所以， 雷射感測器100於受光部102之受光量在比特定的臨限值q 少時，可判定在光路上存在對象物。 [專利文獻1]特開2002-001195公報 【發明内容】 然而，和大型的He-Ne氣體雷射等不同，在小型的半導體 雷射，如圖12及圖14所示，雷射光具有伴隨從對準焦點的 位置（最集中光束之位置：在此於示例為投光部1〇1的照射 開始位置）向光軸方向偏移，其直徑變寬之性質。因此，如 圖14所示，對象物在離投光部101遠的位置（直徑變寬的位 置）時，雷射光幾乎不被遮蔽而由受光部1〇2接受。在此情 形’於受光部102之雷射光的受光量如圖丨5所示，由於比臨 102712.doc 1295590 限值Q多，所以儘管存在原本應檢測之大小的對象物，還是 產生不能檢測該對象物之事態。使用普通的透過型的雷射 感測器時’可維持於塗佈處理所需的精確度之範圍係投光 部101和受光部102的間隔最大至5〇〇 mm程度。 即，在專利文獻1所記载之塗佈裝置，例如隨著基板的大 型化，於雷射感測器1 〇〇，在產生需要將投光部丨〇丨和受光 部102比較分離而配置時（檢測用的雷射光的光路變長時）， Φ 具有對於文光部102側的區域之檢測精確度減低之問題。 再者，在雷射感測器100藉由衰減量進行檢測。所以，必 須將投光部101和受光部102正確對向配置，具有在雷射感 測器10 0的調整工作費時間之問題。 再者，為提高雷射感測器i 〇〇的靈敏度，對於一點點的衰 減亦有需要判斷為檢測出了異物。然而，在先前的裝置， 隨著移動之時的振動投光部1〇1和受光部1〇2偏移，因此有 雷射光的受光量衰減之情形。即，在先前的裝置，有提高 φ 靈敏度便產生錯誤檢測之問題。 本發明，係鑒於上述課題所完成者，以防止對象物的檢 測精確度減低之同時減輕操作者的負擔為目的。 為解決上述課題，請求項〗的發明之特徵係於基板塗佈特 疋的處理液之基板處理裝置，且具備保持基板之保持機 構對於保持在上述保持機構之上述基板喷出特定的處理 液之噴出機構、使保持在上述保持機構之上述基板與上述 喷出機構相對移動並對於上述基板藉由上述喷出機構實行 掃描之移動機構、在上述喷出機構的掃描中檢測有可能與 102712.doc 1295590 上_機構相干涉之對象物之至少一個檢測機構、 於藉由上述檢測機構之檢測結果而控制上述移動機構之控 制機構，並且上述檢測機構具備照射雷射光之投光部，和 配置於從接文由上述投光部所照射之雷射光之中的直接光 之位置偏離之位置ϋ由上述投光部所照射之雷射光之 中由上述對象物所反射之雷射光作為檢測光t受光部，並 且上述檢測機構在上述受光部接受上述檢測光時，將檢測 Φ 出上述對象物之檢測結果傳達至上述控制機構。 再者，請求項2的發明之特徵係關於請求項i的發明之基 ^處理裝置’其中上述受光部配置在對於上述喷出機構的 掃描方向大致向垂直方向偏移之位置。 再者，請求項3的發明之特徵係關於請求項丨的發明之基 板處理裝置，其中上述投光部在與保持在上述保持機構之 上述基板的表面大致平行方向照射上述雷射光。 再者，請求項4的發明之特徵係關於請求項丨的發明之基 • 板處理裝置，其中進一步具備檢測有可能在上述喷出機構 的知描中與上述噴出機構相干涉之對象物之辅助檢測機 構，並且上述辅助檢測機構配置在與上述投光部或輔助投 光部相對向之位置，具備接受從上述投光部或上述辅助投 光部所照射之上述雷射光的直接光之輔助受光部，並且上 述辅助檢測機構在於上述辅助受光部之上述直接光的受光 量成為特定的臨限值以下時，將檢測出上述對象物之檢測 結果向上述控制機構傳達，並且上述控制機構按照上述檢 測機構的檢測結果及上述輔助檢測機構的檢測結果控制上 102712.doc 1295590 述移動機構。 再者’請求項5的發明之特徵係關於請求項〗的發明之基 板處理裝置，其中具備兩個以上上述至少一個檢測機構， 2且一檢測機構之上述投光部和其他檢測機構之上述投光 #各自分開配置在保持在上述保持機構之上述基板的兩 側。 土在請求項1至5所記載的發明，具備配置在從接受由投光 • σ卩所照射之雷射光之中的直接光之位置偏離之位置，接受 由技光部所照射之雷射光之中由對象物所反射之雷射光作 為檢測光之受光部，並且受光部接受檢測光時，藉由將檢 測出對象物之檢測結果傳達至控制機構，由於受光部的位 置可比較曖昧，調整工作之負擔得以減輕。再者，由於受 光卩點點接叉檢測光就可檢測出對象物，和按照受光量 的衰減量檢測時相比，錯誤檢測得以抑制，所以精確度提 南0 • 於請求項2所記載的發明，受光部藉由對於喷出機構的掃 描方向向大致垂直方向偏移之位置所配置，可控制由噴出 機構之掃描所產生之振動的影響。所以，由於可抑制錯誤 檢測，所以可取得正確的檢測結果。 在請求項4所記載的發明’具備配置在與投光部或輔助投 光部相對向之位置，揍受從投光部或辅助投光部所照射之 雷射光的直接光之輔助受光部’並且在於辅助受光部之直 接光的受光量成為特定的臨限值以下時，藉由檢測出對象 物’可檢測之對象物的範圍擴大。 102712.doc 1295590 在明求項5所記載的發明，藉由一檢測機構之投光部和其 他檢測機構之投光部各自分開配置在保持在保持機構之基 板的兩側，可不受基板寬度的影響而檢測出對象物。 【實施方式】 以下’對於本發明的較佳實施形態，一邊參照附圖一邊 進行詳細說明。 < 1 ·第1實施形態> _ <:ι·ι構成說明〉 圖1係本發明的第1實施形態之基板處理裝置1的正面 圖。圖2係基板處理裝置2之檢測部45的周邊部的放大圖。 此外，於圖1及圖2,為便於圖示及說明，2軸方向定義為表 示垂直方向，XY平面定義為表示水平面者，其等係為掌握 位置關係而方便定義者，並不限定以下說明之各方向者。 對於以下的圖亦同樣。 基板處理裝置1係將為製造液晶顯示裝置的晝面面板之 _ 角形玻璃基板作為被處理基板90，於將形成在基板9〇的表 面之電極層等選擇性蝕刻之工序，作為在基板卯的表面塗 佈光阻液之塗佈裝置所構成。所以，在此實施形態，狹^ 喷嘴41可對於基板90喷出光阻液。此外，基板處理裝置工 不僅液晶顯示裝置用的玻璃基板，一般亦可作為在平面板 顯示器用之種種基板塗佈處理液（藥液）之裝置而變形使 用。此外’基板9 0的形狀不限於角形者。 基板處理裝置丨具備起作用作為為載置並保持被處理基 板90之保持臺之同時，亦起作用作為附屬各機構的基臺1 102712.doc -10- 1295590 載物台3。載物台3係直方體形狀的一體的石製者，其上面 (保持面30)及側面加工成平坦面。 載物台3的上面為水平面，成基板9〇的保持面3〇。在保持 面30分佈並形成多數個真空吸附口（未圖示）。於基板處理裳 置1處理基板90之期間，藉由該真空吸附口吸附基板列，載 物台3將基板9〇保持在特定的水平位置。 在載物台3的上方設有從該載物台3的兩側部分大致水平 0 木"又的木橋構仏4。架橋構造4主要由以炭纖維樹脂為骨材 之喷嘴支持部40、支持其兩端之昇降機構43、料及移動機 構5所構成。 在喷嘴支持部40安裝有狹縫噴嘴41和間隙感測器42。 在向水平Y軸方向延伸之狹縫喷嘴41連接有包含向狹縫 喷觜41供給藥液（光阻液）之配管或光阻用泵之喷出機構（未 圖不）。狹縫喷嘴41係由光阻用泵所傳送光阻液，藉由掃描 基板90的表面向基板9〇的表面的特定區誠（以下稱「光阻塗 _ 佈區域」）噴出光阻液。 間隙感測器42安裝在於架橋構造4的喷嘴支持部40和基 板90的表面相對向之位置，檢測和特定方向（·ζ方向）的存在 物（例如基板90或光阻膜）之間的距離（間隙），將檢測結果向 控制部7傳達。 猎此，控制部7基於間隙感測器42的檢測結果，可檢測基 板90的表面和狹縫喷嘴41的距離。此外，在本實施形態之 基板處理裳置1具備兩個間隙感測器42，但間隙感測器^ 的數里不限於此’亦可進一步具備多數個間隙感測器42。 102712.doc 1295590 幵降機構43、44分開在狹縫喷嘴4 1的兩側，藉由喷嘴支 持部40與狹縫噴嘴41相連接。昇降機構43、44將狹縫噴嘴 41並進地昇降之同時，亦用於調整在狹縫喷嘴41的YZ平面 内的姿勢。 在架橋構造4的兩端部固定設有沿載物台3的兩侧的緣侧 而刀開配置之移動機構5。移動機構5主要包含一對AC無心 線性馬達(以下，只簡稱為「線性馬達」。）5〇和一對線性編 碼器5 1。 線）·生馬達5〇係分別具備固定子及移動子（未圖示），藉由 固定子和移動^電磁性相1作用^成為豸架㈣造 4(狹縫噴嘴41)向又軸方向移動之驅動力之馬達。此外，線 性馬達50之移動量及移動方向可藉由來自控制部7的控制 信號控制。 琛性編碼器5 1分別具備 /、/入个双列卞（禾 標尺部和檢測子的相對位置關係，並傳達至控制部7。各. 測子分別固定設置在架橋構造4的兩端部，標尺部分別固〕 设置在載物台3的兩侧。藉此，線性編碼器5!具 架橋構造4的X軸方向的位置之功能。 “ ^4固5定設置在架橋構造4的兩側之移動機構5更安裝有系 :广於本實施形態之基板處理裝置】，檢測對象物以 備兩個檢測感測器㈣、451及—個輔助檢測❹ I02712.doc 12 1295590 係之右側面圖，圖5係表示狹縫噴嘴41和檢測部45的配置關 係之左側面圖。 再者，掃描範圍E0係於基板上方的狹縫喷嘴41的掃描範 圍。更加詳細說明，藉由移動機構5向χ轴方向移動，狹縫 喷嘴41的下端（_Z方向的端部）描繪的執跡區域（成面狀的區 域）之中，基板90和狹縫喷嘴41的下端在最接近狀態（塗佈光 阻液之際的間隙）成對向之區域。即，掃描範圍£〇係在狹縫 _ 喷嘴41掃描中，狹縫噴嘴41有可能與對象物相接觸之區 域。在基板處理裝置1，狹縫喷嘴41藉由移動機構5向各種 位置移動，但在昇降機構43、44將狹缝喷嘴41維持在足夠 的高度而移動時，或狹縫噴嘴41在和基板9〇不相對向之位 置移動時，狹縫喷嘴41幾乎不具有和對象物相干涉之危險 性。 此外’對象物係於掃描範圍別所檢測出之物體，係狹縫 喷嘴41在掃描掃描範圍E〇之中具有干涉之可能性的物體。 # 實際上除如粒子的異物以外，亦有基板90本身成為對象物 之丨月形。因為若在載物台3和基板9〇之間存在異物，則基板 90隆起而與狹縫噴嘴41相干涉。 核测部45對於狹縫喷嘴41，配置在掃描方向（係狹縫喷嘴 在掃描範圍E0移動之際的移動方向，於本實施形態為（_χ 方向）的刖方位置，並伴隨狹縫喷嘴41的又軸方向的移動， 、ϋ同方向移動一邊進行對象物的檢測。此外，檢測 部45:狹縫噴嘴41的才目對距離係按照冑由移動機構5而狹 縫11 f 4 1移動的速度和控制部7的運算速度所設^。即，在 102712.doc 1295590 按照檢測部45的檢測結果，控制部7控制移動機構5之情 形，係可充分回避對象物和狹縫噴嘴41的接觸之距離。 檢測部45的檢測方向為γ軸方向，檢測感測器45〇、45 i 及輔助檢測感測器452排列在X軸方向。再者，檢測感測器 450、451及輔助檢測感測器452的Z軸方向的位置可藉由操 作者分別調整。 檢測感測器450、451及辅助檢測感測器452分別具備投光 $ 部（投光部450a、451a、452a)和受光部（受光部45 Ob、451b、 4 52b)。於本實施形悲之各投光部45〇a、令5 1 a、452a使用照 射點型的雷射光之小型半導體雷射，但不限於此。例如， 亦可使用照射狹縫型的雷射光者。 檢測感測器450、451係藉由受光部450b、45 lb是否接受 從投光部45〇a、45 1 a所照射的雷射光，檢測對象物之感測 器。 如圖3所示，投光部450a配置在基板90的（-Y)側，受光部 • 4 5 配置在基板90的（+Y)側。另一方面，投光部451a配置 在基板90的（+Y)側，受光部45 lb配置在基板90的（-Y)侧。 即，於本實施形態之基板處理裝置1，檢測感測器450的投 光部450a和檢測感測器45 1的投光部45 la分別分開配置在 基板90的兩侧。藉此，檢測感測器450向（+Y)方向照射雷射 光’檢測感測器45 1向（-Y)方向照射雷射光。 檢測感測器450、451的各受光部450b、451b如圖4及圖5 所示，較各投光部450a、45 la的Z軸方向的高度位置錯離配 置在（+Z)方向。更加詳細說明，從各投光部450a、45 la所 102712.doc 14 1295590 照射之雷射光的直接光較入射位置在（+z)方向錯離配置有 各受光部450b、451b。投光部450a、45 la將雷射光分別照 射在沿Y軸的方向（亦可稍微向（(-Z)方向傾斜）。 圖6係表示在經由檢測感測器450檢測之際，不存在對象 物之情形的雷射光的執跡之圖。圖7係表示在經由檢測感測 器450檢測之際，存在對象物之情形的雷射光的執跡之圖。 根據圖6及圖7，說明於本實施形態之檢測感測器45〇檢測對 0 象物之原理。此外，關於檢測感測器45 1，只是雷射光的照 射方向相異，而檢測對象物之原理也和檢測感測器45〇大致 相同，所以省略說明。 如圖6所示’受光部45Ob配置在從接受由投光部450a所照 射之雷射光之中的直接光之位置向（+Z)方向偏移之位置。 即’於無對象物之情形，從投光部450a所照射之雷射光不 向受光部450b入射。另一方面，如圖7所示，在存在對象物 之情形’由投光部450a所照射之雷射光的一部分由對象物 _ 所反射，受光部450b接受該反射光。 即’於本實施形態之檢測感測器45〇、45丨係將由對象物 所反射之雷射光作為檢測光之雷射感測器，將表示由受光 部450b、451b所接受之檢測光的光量的信號傳達至控制部 7 ° 詳細後述’控制部7在從檢測感測器450、45 1所傳達之該 受光量為「0」之情形，判斷未能檢測出對象物，在受光量 大於「0」之情形，判斷檢測出對象物。 如圖7所示’即使存在對象物並且雷射光的一部分接觸對 102712.doc -15- 1295590 象物而被不規則反射，由於通常對象物較雷射光的點徑為 微小，所以其大半亦追蹤作為直接光的執跡。所以，在先 前的透過型雷射感測器，即使在存在對象物之情形受光部 亦較多接受直接光。因此，對象物遮蔽直接光而受光量的 衰減量微小。此外，基板9〇的尺寸大型化，投光部和受光 部的距離變遠，則雷射光的點徑變寬（參照圖12及圖14)。此 時，被對象物所遮蔽之受光量的衰減量進一步變小。 另一方面，由於感測器伴隨狹縫喷嘴移動，因伴隨移動 之振動而雷射光的射束會稍微振動。因此，來自投光部的 雷射光（直接光）偏離受光部，於受光部之受光量將衰減，在 先刖的裝置判斷檢測出對象物。即，由於存在對象物時的 哀減里你i小，所以由於被對象物所遮蔽而生成之受光量的 衰減和感測器的移動（振動）所生成之受光量的衰減的無法 區別’在先前的裝置有可能會發生錯誤檢測。頻繁發生錯 誤檢測，由於每一次狹縫喷嘴都要停止，所以具有產能下 降之問題。 然而，於本實施形態之基板處理裝置丨，受光部45〇b、45ib 配置在從接受雷射光的直接光之位置偏移之位置，藉由檢 測光的有無而檢測對象物的有無。即，較藉由受光量的衰 減量檢測對象物的有無之先前的手法，可抑制錯誤檢測。 再者，受光部450b配置在從接受由投光部450am照射之 雷射光的直接光之位置對於狹縫喷嘴41的掃描方向（χ軸方 向）向大致垂直方向偏移之位置。因振動而雷射光的振動主 要發生在狹縫噴嘴41的掃描方向，Z軸方向的振動比較少。 102712.doc -16- 1295590 斤乂 藉由焚光部45〇七配置在向（+Z)方向偏移之位置，可 更加抑制振動之錯誤檢測。 圖8係說明檢測感測器45〇檢測接近受光部45〇七之位置的 對象物之情形之圖。在對象物存在於接近受光部W⑽之位 置丨月形，從投光部450a所射出之雷射光的反射光LFL在受光 °P45〇b的位置，通過z軸方向比較低的位置。特別是基板90 為大型之情形，由於投光部45〇a和受光部45讣的距離遠， φ 所以為接受該反射光LFL必須將受光部450b調整於比較低 的位置，會接受從投光部45〇a所射出之雷射光的直接光 DRL。檢測感測器45〇由於無法區別直接光反射光 LFL ’所以在該情形有可能不能檢測出對象物。 為防止此事，只要在從基板90的端部向（+Y)方向比較偏 離之位置配置受光部450b即可。然而，考慮到基板處理裝 置1的下部印刷，受光部45〇b配置在基板90的端部附近為 佳。 • 因此在本實施形態之基板處理裝置丨，在如圖8所示之位 置存在對象物之情形，藉由從方向照射雷射光之檢測 感測器451而檢測。由於存在於（+γ)側之對象物和受光部 451b具有充分距離，所以受光部451b即使設置在不接受直 接光之充分的高度位置，亦可接受存在於（+γ)側之對象物 所反射之雷射光。 如此，藉由檢測感測器45〇的投光部45〇a和檢測感測器 451的投光部451a分別分開配置於保持在載物台3的基板9〇 的兩侧，檢測感測器450和檢測感測器451互補地起作用， 102712.doc •17- Ϊ295590 可不接受基板90的寬度影響而檢測掃描範圍E〇内的對象 物。 辅助檢測感測器452如圖4及圖5所示，投光部452 a和受光 部452b配置於大致相同高度的位置軸方向的位置），投光 部452a和受光部452b以對向之方式配置。本實施形態之辅 助檢測感測器452係藉由對象物遮蔽投光部452&所照射之 雷射光，根據受光部452b接受之雷射光的受光量的衰減量 鲁 檢測對象物之透過型雷射感測器。即，檢測對象物之原理 和於先則的裝置所使用之雷射感測器1〇〇(參照圖12及圖13) 相同。然而’和先前的裝置不同，為檢測對象物之臨限值 设定較低（衰減量多），設定為振動之衰減程度不會錯誤檢 測。即，輔助檢測感測器452係檢測比較大型的對象物之感 測器’不能檢測小的對象物，起作用作為檢測精確度粗的 感測器。 檢測感測器450如雷射光不到達受光部450b所配置側（+γ 馨 側）’則不能檢測對象物。同樣，檢測感測器45 1如雷射光 不到達受光部45 lb所配置側（-Y側），則不能檢測對象物。 例如，在存在將雷射光完全遮蔽之大型對象物之情形，從 投光部450a、45 la之任一所照射之雷射光都不會到達受光 部450b、451b。如此，在存在比預測大的對象物之情形， 控制部有可能誤認為不存在對象物。 因此’在本實施形態之基板處理裝置丨，設有輔助檢測感 測器452，以檢測遮斷雷射光的大型對象物。藉由如此防止 對象物的看漏，基板處理裝置1可更加高精確度地檢測對象 102712.doc -18· 1295590 物。再者’輔助檢測感測器452的臨限值雖說明設定較低， 但極端而言，亦可僅在於受光部452b之受光量為「〇」之情 形（被完全遮薇之情形）’判斷檢測出對象物。 返回圖1，控制部7根據程式處理各種資料。控制部？藉由 未圖示的電覽與基板處理裝置〗的各機構相連接，按照來自 間隙感測器42、線性編碼器5 1及檢測部45等的輸入，控制 載物台3、昇降機構43、44及移動機構5等之各構造。 尤其，控制部7基於來自檢測感測器45〇、45丨之輸入，一 邊監視各受光部450b、451b是否接受了雷射光，一邊判定 任一在接受雷射光時檢測出對象物。 此外，控制部7基於來自輔助檢測感測器452之輸入，運 算於受光部娜之雷射光的受光量，在藉由運算所求得之 受光量較預先所狀臨限料之情形，判定㈣描範圍e〇 内存在對象物。 於本實悲之基板處理裝置〗，控制部7在判定存在有 對象物之情形’將該對象物認為係接觸狹㈣嘴41之干涉 物。而且，為回避該對象物和狹縫噴嘴41的接觸而控制: 動機構5(輕馬達5G)，停止狹縫噴嘴41之掃^再者，對 於檢測出對象物之情形的控制部7的控制動作，後述之。 再者’控制部7與未圖示之操作部(操作面板、鍵盤等）及 ^部（液晶顯示器或顯示按㈣）相連接，經由操作部接受 白= 乍者的指示之同時，#由顯示顯示部需要的資料而 乍者通知基板處理裝置1的狀態等。 以上係本實施形態之基板處理裝置丨的構成及功能的說 102712.doc -19- 1295590 明。 <1 ·2調整工作> 在基板處理裝置1，在對於基板9〇進行塗佈光阻液之處理 之前’由操作者進行檢測感測器450、45 1及輔助檢測感測 器452的Ζ軸方向的位置調整工作。該位置調整使用持有1〇 μιη 以下的定位精確度之微型量規進行。 檢測感測器450、451之投光部450a、45 la以照射之雷射 光沿基板90的表面之方式進行z軸方向的位置調整。在該情 形’由於雷射光之一部分被基板9〇所遮蔽，所以Z轴方向的 位置調整僅雷射光的點徑分可容許誤差，可比較曖昧地進 行調整。即，由於不需要嚴密的調整工作，可減輕調整工 作的負擔。 再者’此意味著在檢測感測器450、451，基板90的厚度 即使僅點徑分變化亦可對應。即，即使在處理厚度不同的 基板90之情形，由於其厚度變化只要在特定的範圍内不需 要再調整，所以亦可減輕調整工作的負擔。 決疋了投光部450a、45la的位置，檢測感測器45〇、45 i 的受光部4501)、45113暫且設置於接受從投光部45(^、451& 所照射之雷射光的直接光之位置。此時受光部45〇b、45 由於只要接受一部分雷射光（直接光）即可，所以該位置調整 比較曖昧即可。其次，將受光部45〇b v 4511)慢慢向（+z)方 向移動，將受光部450b、451b固定在不接受雷射光之位置。 如此，於受光部450b、451b的位置調整工作，較先前的裝 置亦減輕工作之負擔。 102712.doc -20- 1295590 輔助檢測感測器452的投光部452a為不將以正常狀態保 持在載物台3之基板90作為對象物錯誤檢測，其雷射光的光 路以較基板90的表面成為（+Z)方向的位置之方式進行位置 調整。即，一邊考慮基板90的厚度，一邊以載物台3的保持 面30為基準進行位置調整。此時，考慮基板9〇的厚度的均 勻性（通常為設計厚度的± 1 %以内）或保持面30的平坦加工 精確度等調整為佳。藉此，雷射光的光路以較基板9〇的表 面成為（+Z)侧之方式所調整。 再者，於基板處理裝置1，為防止狹縫喷嘴41和對象物的 接觸，必須檢測出較掃描範圍E0存在於（-Z)側之對象物。 所以，以雷射光的掃描範圍較掃描範圍E0包含（-ζ)侧的區 域之方式，調整投光部452a的Ζ轴方向的位置。 決定了投光部452a的位置，輔助檢測感測器452的受光部 452b以和投光部452a的Z軸方向的位置大致相同之方式所 調整。然而，在本實施形態之基板處理裝置1，粗糙設定輔 _ 助檢測感測器452的檢測精確度。所以，不需要如先前的裝 置以接受從投光部452a所照射之雷射光的大致1〇〇%之方式 嚴密調整受光部452b的位置。即，只要以該雷射光的點的 一部分被受光部452b所接受之方式調整即足夠，較先前可 減輕調整工作的負擔。 <1.3動作說明> 其次，對於基板處理裝置1的動作進行說明。圖9及圖1〇 係表示於基板處理裝置1的塗佈處理動作之流程圖。此外， 以下所示之各部分的動作控制只要不特別聲明，就由控制 102712.doc -21 - 1295590 部7所進行。 板處理凌置1 ’藉由以操作者或未圖示之搬送機構將 基板90搬送到特定的位置，開始光阻液的塗佈處理。此外， :、、、]。處理的扣示亦可在基板9 〇的搬送結束之時由操作者 操作操作部所輸入。 百先，載物台3將基板9〇吸附並保持在保持面3〇上的特定 位置。其次，藉由移動狹縫噴嘴41，將間隙感測器42移動 • 至為測定和基板90的間隙之測定開時位置（步驟S11)。該動 作藉由昇降機構43、44將狹縫喷嘴4 i的高度位置調整至測 疋同度之同時，線性馬達5〇將架橋構造4向又軸方向調整而 進行。 ^隙感測II 42的向測定位置的移動結束，線性馬達观 將架橋構造4向（+χ)方向移動。藉此，間隙感測器“保持特 疋的測疋咼度之同時，測定於基板9〇表面的塗佈區域之基 板9〇表面和狹縫喷嘴41的間隙（步驟S12)。此外，塗佈區域 馨久在土板9 0的表面之中欲塗佈光阻液之區域，通常係從基 板90的全面積減除沿端緣之特定寬度區域之區域。此外， 在進行間隙感測器42之測定之間，為了狹縫喷嘴41不與基 板90或異物之對象物相接觸，於基板處理装置丨，充分確保 於測定高度之狹縫喷嘴41和保持面3〇之間的z軸方向的距 離。 間隙感測器42的測定結果傳達至控制部7。而且，控制部 7將所傳達之間隙感測器42的測定結果與由線性編碼器Η 與所檢測之水平位置（X軸方向的位置）關聯化而保存在記 102712.doc -22^ 1295590 憶部。 構==掃描(測定)結束，線性馬達5。就將架橋 向X軸方向移動，將檢測部45向基板9G的端部 動（步驟S13)。此外，端部位置係存在於檢測部45之中最（x) 2之感測W財㈣形態為㈣調11450)的光軸大好 基板的⑼侧的邊緣之位置。此外，藉由間隙感測器二 =定’料基板90的厚度不在指㈣圍以内時，基板處. (3) It is problem that it is applied by pulling foreign matter while pulling. Therefore, the foreign matter inspection: the object is involved, and the avoidance slit I02712.doc 1295590 is contained in, for example, Patent Document 1. The coating device described in Patent Document 1 detects a photographic object by a transmission type laser sensor (a sensor for detecting laser light transmitted through 35), and detects the laser sensing Is. In the case of the object, the slit nozzle and the object are prevented from coming into contact by forcibly ending the coating process. Figs. 12 to 15 are conceptual views for explaining the principle of detecting an object by the transmission type laser sensor 1 of the coating device described in the patent document. The transmissive laser sensor 1 receives the laser light emitted from the light projecting unit 1〇1 by the light receiving unit 1〇2 disposed on the optical axis opposite to the light projecting unit 101, according to the light receiving unit 1〇2 A sensor for detecting the presence or absence of a light-receiving object. In the laser sensor 100, as shown in Fig. 12, when some object (object) exists on the optical path, the object is shielded from the laser light on the optical path. Therefore, as shown in FIG. 13, the amount of received light of the laser light in the light receiving unit 102 is reduced. Therefore, when the amount of light received by the light receiving unit 102 in the light receiving unit 102 is smaller than the specific threshold value q, it can be determined that an object exists on the optical path. [Patent Document 1] JP-A-2002-001195 SUMMARY OF THE INVENTION However, unlike a large He-Ne gas laser or the like, in a small semiconductor laser, as shown in FIGS. 12 and 14, the laser light has a concomitant The position of the focus (the position of the most concentrated beam: here, the irradiation start position of the light projecting portion 1〇1) is shifted toward the optical axis direction, and the diameter thereof is widened. Therefore, as shown in Fig. 14, when the object is far from the light projecting portion 101 (the position where the diameter is widened), the laser light is hardly shielded and received by the light receiving unit 1〇2. In this case, the amount of received light of the laser light received by the light receiving unit 102 is as shown in FIG. 5, and since there is more than the limit value Q of 102712.doc 1295590, even if there is an object of a size that should be detected, it is impossible to detect the object. The state of affairs of the object. When the ordinary transmissive laser sensor is used, the range of accuracy required for the coating process can be maintained at a distance of up to 5 mm from the light projecting portion 101 and the light receiving portion 102. In other words, in the coating device described in Patent Document 1, for example, as the size of the substrate increases, the laser sensor 1 is disposed, and the light projecting unit 丨〇丨 and the light receiving unit 102 need to be separated and arranged. When the optical path of the laser light for detection becomes long, Φ has a problem that the detection accuracy of the region on the side of the light-receiving portion 102 is reduced. Furthermore, the laser sensor 100 detects by the amount of attenuation. Therefore, it is necessary to arrange the light projecting unit 101 and the light receiving unit 102 in the correct direction, and there is a problem that the adjustment work time of the laser sensor 100 is time-consuming. Furthermore, in order to improve the sensitivity of the laser sensor i ,, it is necessary to judge that a foreign object is detected for a little attenuation. However, in the prior art, as the vibration light projecting unit 1〇1 and the light receiving unit 1〇2 are shifted, the amount of received light of the laser light is attenuated. That is, in the prior device, there is a problem that the φ sensitivity is increased to cause erroneous detection. The present invention has been made in view of the above problems, and aims to prevent an operator from reducing the accuracy of detection while reducing the burden on the operator. In order to solve the above-described problems, the invention of the present invention is characterized in that the substrate processing apparatus for applying a special processing liquid to a substrate is provided, and the holding means for holding the substrate discharges a specific processing liquid to the substrate held by the holding means. a discharge mechanism that detects a movement mechanism that moves the substrate held by the holding mechanism relative to the discharge mechanism and scans the substrate by the discharge mechanism, and detects the scan of the discharge mechanism with 102712.doc 1295590, at least one detecting means for the object interfering with the mechanism, controlling the control means of the moving mechanism by the detection result of the detecting means, and the detecting means is provided with a light projecting portion for irradiating the laser light, and is disposed at the slave a position at which the position of the direct light among the laser beams irradiated by the light projecting portion is shifted, and the laser beam reflected by the object among the laser light irradiated by the light projecting unit is used as the detecting light t receiving portion And the detecting means detects the Φ out of the object when the light receiving unit receives the detection light. A detection result is communicated to the control means. Further, the invention of claim 2 is characterized in that the light receiving unit is disposed at a position shifted substantially in the vertical direction with respect to the scanning direction of the discharge mechanism. According to a third aspect of the invention, in the invention, the light projecting unit irradiates the laser beam in a direction substantially parallel to a surface of the substrate held by the holding mechanism. Further, the invention of claim 4 is characterized in that the base plate processing apparatus according to the invention of claim 1 further includes an auxiliary device for detecting an object which may interfere with the discharge mechanism in the description of the discharge mechanism a detecting means, wherein the auxiliary detecting means is disposed at a position facing the light projecting portion or the auxiliary light projecting portion, and includes auxiliary light receiving direct light of the laser light irradiated from the light projecting portion or the auxiliary light projecting portion And the auxiliary detecting means transmits the detection result of the detected object to the control means when the received light amount of the direct light is equal to or less than a predetermined threshold value, and the control means performs the detection according to the detection The detection result of the mechanism and the detection result of the above auxiliary detection mechanism are controlled by 102712.doc 1295590. Further, the invention of claim 5 is characterized in that the substrate processing apparatus according to the invention of claim 1 includes two or more of the at least one detecting means, and the above-mentioned projection of the light projecting unit and the other detecting means of the detecting means The light # is separately disposed on both sides of the above-mentioned substrate held by the above holding mechanism. In the invention according to the first to fifth aspects of the present invention, the laser beam is irradiated with the laser light irradiated by the technical light portion at a position shifted from the position of the direct light received by the laser light irradiated by the light projection σ卩. When the laser light reflected by the object is used as the light receiving portion of the detection light, and the light receiving unit receives the detection light, the detection result of the detected object is transmitted to the control unit, and the position of the light receiving unit can be compared. The burden is reduced. Furthermore, since the object can be detected by the light-receiving point detection light, the error detection is suppressed as compared with the detection of the attenuation amount of the received light amount, so the accuracy is increased. According to the invention, the light-receiving portion is disposed at a position shifted in the substantially vertical direction from the scanning direction of the discharge mechanism, and the influence of the vibration generated by the scanning of the discharge mechanism can be controlled. Therefore, since the error detection can be suppressed, the correct detection result can be obtained. The invention described in claim 4 includes an auxiliary light receiving unit that is disposed at a position facing the light projecting unit or the auxiliary light projecting unit and receives direct light of the laser light irradiated from the light projecting unit or the auxiliary light projecting unit. Further, when the amount of received light of the direct light receiving unit is equal to or less than a specific threshold value, the range of the object that can be detected by the object is detected to be enlarged. 102712.doc 1295590 The invention according to claim 5, wherein the light projecting portion of one detecting means and the light projecting portion of the other detecting means are disposed separately on both sides of the substrate held by the holding means, and are not dependent on the width of the substrate The object is detected by the influence. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. <1. First Embodiment> _ <: Description of the structure of the substrate: Fig. 1 is a front view of the substrate processing apparatus 1 according to the first embodiment of the present invention. FIG. 2 is an enlarged view of a peripheral portion of the detecting unit 45 of the substrate processing apparatus 2. In addition, in FIG. 1 and FIG. 2, for convenience of illustration and description, the two-axis direction is defined as a vertical direction, and the XY plane is defined as a horizontal plane, and it is convenient to define the positional relationship, and the following description is not limited. In all directions. The same is true for the following figures. In the substrate processing apparatus 1 , a glass substrate for manufacturing a face sheet of a liquid crystal display device is used as a substrate 90 to be processed, and a step of selectively etching an electrode layer formed on a surface of the substrate 9 is used as a substrate. The coating device is coated with a photoresist. Therefore, in this embodiment, the narrow nozzle 41 can eject the photoresist liquid to the substrate 90. Further, the substrate processing apparatus can be used not only as a glass substrate for a liquid crystal display device but also as a device for applying a processing liquid (chemical liquid) to various substrates for a flat panel display. Further, the shape of the substrate 90 is not limited to the angle. The substrate processing apparatus 丨 has a stage 1 102712.doc -10- 1295590 stage 3 which functions as a holding stage for placing and holding the substrate 90 to be processed, and also functions as an auxiliary mechanism. The stage 3 is an integrated stone body having a rectangular parallelepiped shape, and the upper surface (holding surface 30) and the side surface are processed into a flat surface. The upper surface of the stage 3 is a horizontal plane, and the holding surface 3〇 of the substrate 9 is formed. A plurality of vacuum suction ports (not shown) are formed on the holding surface 30. While the substrate processing apparatus 1 is processing the substrate 90, the substrate row is adsorbed by the vacuum suction port, and the stage 3 holds the substrate 9A at a specific horizontal position. Above the stage 3, a wooden bridge structure 4 which is substantially horizontal from the both sides of the stage 3 is provided. The bridge structure 4 is mainly composed of a nozzle support portion 40 made of carbon fiber resin as an aggregate, a lifting mechanism 43 supporting both ends thereof, and a material and moving mechanism 5. The slit nozzle 41 and the gap sensor 42 are attached to the nozzle support portion 40. A slitting nozzle 41 extending in the horizontal Y-axis direction is connected to a discharge mechanism (not shown) including a pipe for supplying a chemical liquid (photoresist) to the slit squirt 41 or a pump for photoresist. In the slit nozzle 41, the photoresist is transferred by the resist pump, and the photoresist is ejected from the surface of the substrate 90 to a specific region of the surface of the substrate 9 (hereinafter referred to as "resistance coating area"). The gap sensor 42 is mounted at a position where the nozzle support portion 40 of the bridge structure 4 and the surface of the substrate 90 face each other, and detects the distance between the presence (for example, the substrate 90 or the photoresist film) in a specific direction (·ζ direction). (gap), the detection result is transmitted to the control unit 7. In response to this, the control unit 7 can detect the distance between the surface of the substrate 90 and the slit nozzle 41 based on the detection result of the gap sensor 42. Further, in the substrate processing skirt 1 of the present embodiment, the two gap sensors 42 are provided, but the number of the gap sensors is not limited thereto. Further, a plurality of gap sensors 42 may be further provided. 102712.doc 1295590 The downsizing mechanisms 43, 44 are separated on both sides of the slit nozzle 41, and are connected to the slit nozzle 41 by the nozzle holder 40. The elevating mechanisms 43 and 44 also adjust the posture in the YZ plane of the slit nozzle 41 while raising and lowering the slit nozzle 41. At both end portions of the bridge structure 4, a moving mechanism 5 that is disposed to be opened along the edge sides of the both sides of the stage 3 is fixed. The moving mechanism 5 mainly includes a pair of AC centerless linear motors (hereinafter, simply referred to as "linear motors") 5 〇 and a pair of linear encoders 5 1 . The wire) and the motor 5 are each provided with a stator and a moving member (not shown), and the stator and the movable electromagnetic phase 1 act as a truss (4) 4 (slit nozzle 41) in the direction of the other axis. The driving force of the motor. Further, the amount of movement and the moving direction of the linear motor 50 can be controlled by a control signal from the control unit 7. The elastic encoders 5 1 are provided with /, / into a double row 卞 (the relative positional relationship between the scale portion and the detector, and transmitted to the control unit 7. Each of the probes is fixedly disposed at both ends of the bridge structure 4 The scale portion is respectively disposed on both sides of the stage 3. Thereby, the linear encoder 5 has the function of the position of the bridge structure 4 in the X-axis direction. " ^4 solid 5 is set in the bridge structure 4 The side moving mechanism 5 is further equipped with a substrate processing apparatus wider than the present embodiment, and the detection object is provided with two detecting sensors (four), 451, and an auxiliary detecting unit ❹ I02712.doc 12 1295590 5 is a left side view showing the arrangement relationship between the slit nozzle 41 and the detecting portion 45. Further, the scanning range E0 is a scanning range of the slit nozzle 41 above the substrate. More specifically, the moving mechanism 5 is explained. In the direction of the yaw axis, the lower end of the slit nozzle 41 (the end portion in the _Z direction), the lower end of the substrate 90 and the slit nozzle 41 are in the closest state (coating) The gap between the photoresists is in the opposite direction. The scanning range is a region where the slit nozzle 41 is in contact with the object in the scanning of the slit_nozzle 41. In the substrate processing apparatus 1, the slit nozzle 41 is moved to various positions by the moving mechanism 5, but When the elevating mechanisms 43 and 44 move the slit nozzle 41 at a sufficient height to move, or when the slit nozzle 41 moves at a position that does not face the substrate 9A, the slit nozzle 41 hardly interferes with the object. In addition, the object detected by the scanning range is an object in which the slit nozzle 41 has the possibility of interference in the scanning scanning range E. # Actually, in addition to foreign matter such as particles, there are also The substrate 90 itself is a moon shape of the object. When foreign matter is present between the stage 3 and the substrate 9A, the substrate 90 is raised and interferes with the slit nozzle 41. The nuclear measuring unit 45 is opposite to the slit nozzle 41. In the scanning direction (the moving direction in which the slit nozzle moves in the scanning range E0, in the present embodiment, the χ position in the (_χ direction) is accompanied by the movement of the slit nozzle 41 in the axial direction, Direction shift The detection unit 45 detects the distance of the slit nozzle 41 in accordance with the speed at which the slit mechanism 11 f 4 1 is moved by the moving mechanism 5 and the calculation speed of the control unit 7. In other words, in the case of the detection unit 45, the control unit 7 controls the movement mechanism 5 in accordance with the detection result of the detection unit 45, and the distance between the object and the slit nozzle 41 can be sufficiently avoided. The detection direction of the detection unit 45 is the γ-axis. The direction, the detecting sensors 45A, 45i and the auxiliary detecting sensor 452 are arranged in the X-axis direction. Further, the positions of the detecting sensors 450, 451 and the auxiliary detecting sensor 452 in the Z-axis direction can be obtained by The operator adjusts separately. The detection sensors 450 and 451 and the auxiliary detection sensor 452 include a light projecting unit (light projecting units 450a, 451a, and 452a) and a light receiving unit (light receiving units 45, 451b, and 425b). In the present embodiment, each of the light projecting units 45A and 510a uses a small-semiconductor laser that emits laser light of a spot type, but is not limited thereto. For example, a person who irradiates a slit type of laser light can also be used. The detecting sensors 450 and 451 detect the target object by whether or not the light receiving units 450b and 45 lb receive the laser light irradiated from the light projecting units 45A and 45 1a. As shown in FIG. 3, the light projecting portion 450a is disposed on the (-Y) side of the substrate 90, and the light receiving portion is disposed on the (+Y) side of the substrate 90. On the other hand, the light projecting portion 451a is disposed on the (+Y) side of the substrate 90, and the light receiving portion 45 lb is disposed on the (-Y) side of the substrate 90. That is, in the substrate processing apparatus 1 of the present embodiment, the light projecting portion 450a of the detecting sensor 450 and the light projecting portion 45la of the detecting sensor 451 are disposed separately on both sides of the substrate 90. Thereby, the detecting sensor 450 illuminates the laser light in the (+Y) direction. The detecting sensor 45 1 illuminates the laser light in the (-Y) direction. As shown in Figs. 4 and 5, each of the light-receiving portions 450b and 451b of the detecting sensors 450 and 451 is disposed in the (+Z) direction from the height position in the Z-axis direction of each of the light projecting portions 450a and 45la. More specifically, the direct light of the laser light irradiated from each of the light projecting portions 450a and 45la 102712.doc 14 1295590 is disposed so as to be offset from the incident position in the (+z) direction by the respective light receiving portions 450b and 451b. The light projecting portions 450a and 45la respectively irradiate the laser light in the direction along the Y axis (may also be slightly inclined in the ((-Z) direction). Fig. 6 shows that the object does not exist when detected via the detecting sensor 450. FIG. 7 is a diagram showing the execution of the laser light in the case where the object is present when detected by the detecting sensor 450. According to FIG. 6 and FIG. The detection sensor 45 of the present embodiment detects the principle of the object to be imaged. Further, with respect to the detection sensor 45 1, only the irradiation direction of the laser light is different, and the principle of detecting the object is also the detection sensor 45. Since the description is omitted, the light-receiving portion 45Ob is disposed at a position shifted from the position of the direct light among the laser beams irradiated by the light projecting unit 450a in the (+Z) direction. In the case where there is no object, the laser light irradiated from the light projecting unit 450a is not incident on the light receiving unit 450b. On the other hand, as shown in Fig. 7, the object is irradiated by the light projecting unit 450a. A part of the laser light is reflected by the object _, and is received by the light receiving unit 450b. The reflected light, that is, the detection sensors 45A and 45A of the present embodiment are laser sensors that detect the laser light reflected by the object, and are received by the light receiving units 450b and 451b. The signal of the amount of light to be detected is transmitted to the control unit 7°. The control unit 7 determines that the amount of received light from the detection sensors 450 and 45 1 is "0", and determines that the object is not detected. When the amount of received light is greater than "0", it is judged that the object is detected. As shown in Fig. 7, even if there is an object and a part of the laser light is in contact with 102712.doc -15-1295590, it is irregularly reflected, because the object is usually Since the spot diameter of the object is smaller than that of the laser beam, most of the tracking is traced as a direct light. Therefore, in the prior transmission type laser sensor, the light receiving portion receives more direct light even in the presence of the object. Therefore, the object is shielded from direct light and the amount of attenuation of the amount of received light is small. Further, the size of the substrate 9 is increased, and the distance between the light projecting portion and the light receiving portion is increased, and the spot diameter of the laser light is widened (see FIG. 12 and Figure 14). At the same time, the amount of attenuation of the amount of received light blocked by the object is further reduced. On the other hand, since the sensor moves with the slit nozzle, the beam of the laser beam vibrates slightly due to the vibration accompanying the movement. The laser light (direct light) of the light portion is deviated from the light receiving portion, and the amount of light received by the light receiving portion is attenuated, and the device is determined to detect the object by the device in the first place. The attenuation of the amount of received light generated by the object and the attenuation of the amount of received light generated by the movement (vibration) of the sensor are indistinguishable. In the previous device, erroneous detection may occur. Error detection frequently occurs because each The slit nozzle is stopped once, so there is a problem of a decrease in productivity. However, in the substrate processing apparatus according to the present embodiment, the light receiving units 45〇b and 45ib are disposed at positions shifted from the position where the direct light receiving the laser light is displaced, and the presence or absence of the object is detected by detecting the presence or absence of the light. In other words, the erroneous detection can be suppressed more than the previous method of detecting the presence or absence of the object by the amount of attenuation of the received light amount. Further, the light receiving unit 450b is disposed at a position shifted from the scanning direction (the χ-axis direction) of the slit nozzle 41 in the substantially vertical direction from the position where the direct light of the laser beam irradiated by the light projecting unit 450am is received. The vibration of the laser light mainly occurs in the scanning direction of the slit nozzle 41 due to the vibration, and the vibration in the Z-axis direction is relatively small. 102712.doc -16- 1295590 乂 配置 配置 配置 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 焚 。 。 。 。 。 。 。 。 。 。 Fig. 8 is a view for explaining a state in which the detecting sensor 45 detects an object approaching the position of the light receiving portion 45. The object is present at a position close to the light receiving portion W (10), and the reflected light LFL of the laser light emitted from the light projecting portion 450a is at a position relatively low in the z-axis direction at the position of the received light °P45〇b. In particular, when the substrate 90 is large, since the distance between the light projecting unit 45A and the light receiving unit 45 is far, φ, in order to receive the reflected light LFL, the light receiving unit 450b must be adjusted to a relatively low position, and the light is received. The direct light DRL of the laser light emitted by the portion 45〇a. Since the detecting sensor 45 is incapable of distinguishing the direct light reflecting light LFL', it is possible that the object cannot be detected in this case. In order to prevent this, the light receiving unit 450b may be disposed at a position that is relatively offset from the end portion of the substrate 90 in the (+Y) direction. However, in consideration of the lower portion printing of the substrate processing apparatus 1, the light receiving portion 45b is preferably disposed in the vicinity of the end portion of the substrate 90. Therefore, in the substrate processing apparatus according to the present embodiment, when the object is present at the position shown in Fig. 8, the detection sensor 451 is irradiated with the laser light from the direction. Since the object existing on the (+γ) side and the light receiving portion 451b have a sufficient distance, the light receiving portion 451b can accept an object existing on the (+γ) side even if it is provided at a sufficient height position that does not receive direct light. Reflected laser light. In this manner, the light projecting portion 45A of the detecting sensor 45A and the light projecting portion 451a of the detecting sensor 451 are separately disposed on both sides of the substrate 9A held by the stage 3, and the detecting sensor is detected. 450 and the detecting sensor 451 function complementarily, and 102712.doc • 17-Ϊ295590 can detect the object in the scanning range E〇 without receiving the influence of the width of the substrate 90. As shown in FIGS. 4 and 5, the auxiliary detecting sensor 452 has the light projecting portion 452a and the light receiving portion 452b disposed at positions in the position axis direction of substantially the same height, and the light projecting portion 452a and the light receiving portion 452b are opposed to each other. Configuration. The auxiliary detecting sensor 452 of the present embodiment shields the laser beam to be irradiated by the light projecting unit 452 & and transmits the laser beam to the object according to the attenuation amount of the received light amount of the laser light received by the light receiving unit 452b. Sensor. That is, the principle of the detection object is the same as that of the laser sensor 1 (see Figs. 12 and 13) used in the prior art device. However, unlike the previous device, the threshold for detecting the object is set low (the amount of attenuation is large), and the degree of attenuation of the vibration is set to be erroneously detected. That is, the auxiliary detecting sensor 452 detects that the sensor of the relatively large object does not detect a small object, and functions as a sensor that detects coarseness. The detecting sensor 450 cannot detect the object such that the laser light does not reach the side (+γ 馨 side) where the light receiving unit 450b is disposed. Similarly, when the detecting sensor 45 1 does not reach the side (-Y side) where the light receiving unit 45 lb is disposed, the detection object 45 1 cannot detect the object. For example, in the case where there is a large object that completely shields the laser light, the laser light irradiated from any of the light projecting portions 450a and 45la does not reach the light receiving portions 450b and 451b. As described above, in the case where there is an object larger than the prediction, the control unit may mistakenly believe that the object does not exist. Therefore, in the substrate processing apparatus 本 of the present embodiment, the auxiliary detecting sensor 452 is provided to detect a large object that blocks the laser light. By thus preventing the leakage of the object, the substrate processing apparatus 1 can detect the object 102712.doc -18· 1295590 with higher precision. Further, although the threshold value of the auxiliary detection sensor 452 is described as being low, in extreme cases, it may be determined only by the fact that the amount of light received by the light receiving unit 452b is "〇" (in the case of being completely covered). The object is detected. Returning to Fig. 1, the control unit 7 processes various materials in accordance with the program. Control department? The board is connected to each unit of the substrate processing apparatus by a map (not shown), and the stage 3, the elevating mechanism 43 and the input are controlled in accordance with inputs from the gap sensor 42, the linear encoder 51, the detecting unit 45, and the like. 44 and each structure of the moving mechanism 5 and the like. In particular, the control unit 7 monitors whether or not each of the light receiving units 450b and 451b receives the laser light based on the input from the detection sensors 45A and 45B, and determines whether or not the object is detected when any of the laser beams is received. Further, the control unit 7 calculates the amount of received light of the laser light received by the light receiving unit based on the input from the auxiliary detecting sensor 452, and judges (4) the amount of received light obtained by the calculation is higher than the predetermined limit. The range e〇 exists in the object. In the substrate processing apparatus of the present invention, the control unit 7 determines that the object is in contact with the interference of the narrow (four) nozzle 41 when it is determined that the object is present. Further, in order to avoid contact between the object and the slit nozzle 41, the moving mechanism 5 (light motor 5G) stops the scanning of the slit nozzle 41, and controls the control unit 7 for detecting the object. Action, described later. Further, the control unit 7 is connected to an operation unit (operation panel, keyboard, etc.) and a unit (liquid crystal display or display button (4)) (not shown), and receives an instruction of white = by the operation unit, and #displays The information required by the display unit is notified to the state of the substrate processing apparatus 1 and the like. The above is a configuration and function of the substrate processing apparatus 本 according to the present embodiment. 102712.doc -19- 1295590. <1·2 adjustment work> In the substrate processing apparatus 1, before the processing of applying the photoresist liquid to the substrate 9 is performed, the operator detects the sensors 450 and 45 1 and the auxiliary detection sensor 452. Position adjustment work in the direction of the x-axis. This position adjustment is performed using a micro gauge with a positioning accuracy of 1 〇 μηη or less. The light projecting portions 450a and 45la of the detecting sensors 450 and 451 perform positional adjustment in the z-axis direction so that the irradiated laser light is along the surface of the substrate 90. In this case, since one portion of the laser light is blocked by the substrate 9A, the positional adjustment in the Z-axis direction is only an allowable error in the spot diameter of the laser light, and can be adjusted relatively smoothly. That is, since the adjustment work is not required, the burden of the adjustment work can be reduced. Further, this means that in detecting the sensors 450 and 451, the thickness of the substrate 90 can be changed even if only the tap diameter is changed. That is, even in the case of processing the substrate 90 having a different thickness, since the thickness variation does not need to be adjusted in a specific range, the burden of the adjustment work can be reduced. The positions of the light projecting units 450a and 45la are determined, and the light receiving units 4501) and 45113 of the detecting sensors 45A and 45i are temporarily provided to receive the direct light of the laser light irradiated from the light projecting unit 45 (^, 451 & At this time, since the light receiving portions 45〇b and 45 can receive only a part of the laser light (direct light), the position adjustment can be made relatively simple. Next, the light receiving unit 45〇bv 4511) is gradually moved toward (+z). In the direction of movement, the light receiving portions 450b and 451b are fixed at positions where laser light is not received. Thus, the position adjustment operation of the light receiving units 450b and 451b reduces the burden of work compared with the prior art. 102712.doc -20- 1295590 The light projecting portion 452a of the auxiliary detecting sensor 452 does not detect the substrate 90 held in the normal state on the stage 3 as an object, and the optical path of the laser light is compared with the surface of the substrate 90. The position is adjusted in such a manner as to be in the (+Z) direction. That is, the position adjustment is performed on the basis of the holding surface 30 of the stage 3 in consideration of the thickness of the substrate 90. At this time, it is preferable to adjust the uniformity of the thickness of the substrate 9 (usually within ± 1% of the design thickness) or the flatness of the holding surface 30. Thereby, the optical path of the laser light is adjusted so that the surface of the substrate 9 turns to the (+Z) side. Further, in the substrate processing apparatus 1, in order to prevent contact between the slit nozzle 41 and the object, it is necessary to detect an object having a scanning area E0 on the (-Z) side. Therefore, the position of the light projecting portion 452a in the x-axis direction is adjusted so that the scanning range of the laser light is smaller than the scanning area E0 including the area on the (-ζ) side. The position of the light projecting portion 452a is determined, and the light receiving portion 452b of the auxiliary detecting sensor 452 is adjusted to be substantially the same as the position of the light projecting portion 452a in the Z-axis direction. However, in the substrate processing apparatus 1 of the present embodiment, the detection accuracy of the auxiliary detection sensor 452 is coarsely set. Therefore, it is not necessary to closely adjust the position of the light receiving portion 452b so as to receive approximately ± 1% of the laser light irradiated from the light projecting portion 452a as in the prior art. In other words, it suffices that the portion of the point of the laser light is received by the light receiving unit 452b, which is sufficient to reduce the burden of the adjustment work. <1.3 Operation Description> Next, the operation of the substrate processing apparatus 1 will be described. Fig. 9 and Fig. 1 are flowcharts showing the coating processing operation of the substrate processing apparatus 1. Further, the operation control of each part shown below is performed by the control 102712.doc -21 - 1295590 section 7 unless otherwise specified. The sheet processing apparatus 1 is configured to start the coating process of the photoresist by transferring the substrate 90 to a specific position by an operator or a transfer mechanism (not shown). In addition, :, ,,]. The handling of the button can also be input by the operator operating the operation unit when the transfer of the substrate 9 is completed. In the first place, the stage 3 adsorbs and holds the substrate 9 at a specific position on the holding surface 3''. Next, by moving the slit nozzle 41, the gap sensor 42 is moved to the position where the measurement and the gap of the substrate 90 are measured (step S11). This movement is performed by the elevating mechanisms 43 and 44 adjusting the height position of the slit nozzle 4 i to the same degree of measurement, and the linear motor 5 调整 adjusts the bridging structure 4 in the direction of the parallel axis. The movement of the gap sensing II 42 to the measurement position is completed, and the linear motor view moves the bridge structure 4 in the (+χ) direction. Thereby, the gap sensor "measures the characteristic measurement degree while measuring the gap between the surface of the substrate 9" of the coating region on the surface of the substrate 9 and the slit nozzle 41 (step S12). The region is a region where the photoresist is to be applied to the surface of the earth plate 90, and the region of the specific width region along the edge is usually subtracted from the entire area of the substrate 90. Further, the gap sensor 42 is performed. Between the measurement, the slit nozzle 41 is not in contact with the substrate 90 or the object of the foreign matter, and is sufficiently ensured in the z-axis direction between the slit nozzle 41 and the holding surface 3〇 of the measurement height in the substrate processing apparatus. The measurement result of the gap sensor 42 is transmitted to the control unit 7. Further, the control unit 7 transmits the measured result of the gap sensor 42 and the linear position detected by the linear encoder (in the X-axis direction). The position is associated with and stored in the record 102712.doc -22^ 1295590. The structure == scanning (measurement) ends, the linear motor 5. The bridge is moved in the X-axis direction, and the detection portion 45 is directed to the end of the substrate 9G. Moving (step S13). In addition, the end position is present in The most (x) 2 sensed (4) of the detection unit 45 has the optical axis of (4) 11450) and the position of the edge of the (9) side of the substrate. Further, the gap sensor 2 determines the substrate 90. When the thickness is not within the circumference of (4), the substrate is
顯不部等顯示警報，將狹縫喷嘴41移動至待機位 置之同時，排出檢測出異常之基板9〇。 檢測部45移動至端部位置，控制部7就藉由停止線性馬達 Μ 1止架橋構造4。再者’基於來自間隙感測器42的測定 結果，算出於狹縫喷嘴410Ζ平面之姿勢成為適宜之姿勢 (狹縫噴嘴41和塗佈區域的間隔為塗佈光阻液之適宜的間 隔（於本實施形態為50〜200 μηι)。以下，稱為「適當姿勢」） 之喷嘴支持部40的位置，基於算出結果控制各昇降機構 43、44並將狹縫喷嘴41調整至適當姿勢。 基板處理裝置1的檢測部4 5由於較狹縫喷嘴4丨配置在（_ χ) 側，所以在檢測部45於端部位置之狀態，狹縫喷嘴41向不 與基板90對向之位置移動。所以，即使在檢測部化於端部 位置之狀態將狹縫喷嘴41向卜Ζ)方向移動而調整為適當姿 勢，亦幾乎沒有狹縫喷嘴41與對象物相接觸之危險性。 狹縫喷嘴41的姿勢調整結束，控制部7就開始檢測部45 之對象物的檢測（步驟s 14)。再者，驅動線性馬達5〇，一邊 將架橋構造4向（-Χ)方向移動（步驟S21)，一邊基於來自檢測 102712.doc -23- 1295590 部45的輸出，判定是否檢測出對象物（步驟S22)。在判定由 任檢測感測器450、451及輔助檢測感測器452檢測出對象 物時，進行步驟S27以後的處理，防止狹縫噴嘴4丨接觸對象 物，詳細後述之。 另方面，在未檢測出對象物時，基於線性編碼器5 j的 輸出，控制部7—邊確認狹縫噴嘴41的位置，一邊直至狹縫 噴嘴41移動至噴出開始位置，反復進行步驟S21至幻3的處The alarm is displayed, and the slit nozzle 41 is moved to the standby position, and the substrate 9 that detects the abnormality is discharged. The detecting portion 45 is moved to the end position, and the control portion 7 stops the linear structure 4 1 by stopping the bridge structure 4. In addition, based on the measurement result from the gap sensor 42, the posture in the plane of the slit nozzle 410 is calculated to be an appropriate posture (the interval between the slit nozzle 41 and the application region is an appropriate interval for applying the photoresist liquid (in In the present embodiment, the position of the nozzle support portion 40 is 50 to 200 μm. Hereinafter, the position of the nozzle support portion 40, which is referred to as "appropriate posture", the respective lift mechanisms 43 and 44 are controlled based on the calculation result, and the slit nozzle 41 is adjusted to an appropriate posture. Since the detecting unit 45 of the substrate processing apparatus 1 is disposed on the (_ χ) side of the slit nozzle 4, the slit nozzle 41 moves to a position that does not face the substrate 90 in a state where the detecting unit 45 is at the end position. . Therefore, even if the slit nozzle 41 is moved in the direction of the end portion to the position of the end portion and adjusted to an appropriate posture, there is almost no risk that the slit nozzle 41 comes into contact with the object. When the posture adjustment of the slit nozzle 41 is completed, the control unit 7 starts detection of the object of the detecting unit 45 (step s 14). Further, when the linear motor 5 is driven, the bridge structure 4 is moved in the (-Χ) direction (step S21), and based on the output from the detection 102712.doc -23-1295590 portion 45, it is determined whether or not the object is detected (step S22). When it is determined that the object is detected by the detection sensors 450 and 451 and the auxiliary detection sensor 452, the processing in and after step S27 is performed to prevent the slit nozzle 4 from coming into contact with the object, which will be described in detail later. On the other hand, when the object is not detected, the control unit 7 checks the position of the slit nozzle 41 while checking the position of the slit nozzle 41 until the slit nozzle 41 moves to the discharge start position, and repeats step S21 to Magic 3
理（步驟S23)。此外，喷出開始位置係狹縫噴嘴“大致沿著 塗佈區域的（+X)側之邊之位置。 狹縫噴嘴移動至喷出開始位置，就藉由光阻用栗（未圖 示）輸送光阻液至狹縫喷嘴41，狹縫喷嘴將光阻液噴出於塗 佈區域。與該喷出動作共同，線性馬達50將狹縫喷嘴41移 動至⑼方向（步驟S24)。藉此’基板9〇的塗佈區域由狹縫 贺嘴41所掃描，塗佈光阻液。與步驟s24的移動動作平行， 和步驟S22同樣，藉由控制部7進行是否檢測出對象物 定（步驟S25)。 於步驟S25 ’在控制部7判定檢測出對象物時(於步驟S25 為帅藉由控制部7停止線性馬達5〇,停止狹縫嗔嘴“的 向的移動動作之同時，輸出警報至顯示部等（步驟 二再者’於步驟S22 ’在控制部7判定檢測 亦大致同樣實行步驟S27。 于 那此，在基板處 檢測出對象物時，藉由立即停止狭海 多動’可防止狹縫喷嘴41和對象物的接觸"“ 102712.doc -24- 1295590 可有效防止狹縫喷嘴41或基板9〇等因接觸而破損。 此外，由於藉由輸出警報可對操作者通知異常，所以可 有效進打恢復工作等。此外，警報若為可使操作者得知異 吊事怨的發生者，則可為任意之手法，經由揚聲器等輸出 警報聲亦可。 步驟S27的實行後，停止光阻用泵而停止光阻液的喷出， 藉由線性馬達50及昇降機構43、44將狹縫喷嘴41退避至待 _ 機位置（步驟S28)。此外，將基板9〇從基板處理裝置丨搬出（步 驟S29)。再者，於步驟S22檢測出對象物時，由於還未開始 光阻液的噴出’所以不進行停止光阻液的喷出之處理。再 者，實行了步驟S27之結果所搬出之基板9〇與其他的基板9〇 區別’操作者或搬送機構搬送至再處理工序。此外，如圖4 及圖5所示，由於亦考慮到異物NG附著在載物台3之情形， 在貫行步驟27時，進行載物台3的清洗為佳。 另一方面’於步驟S25未檢測出對象物時（在步驟S25為 φ N〇)，基於線性編碼器5 1的輸出，控制部7—邊確認狹縫喷 嘴41的位置’一邊直至狹縫噴嘴41移動至噴出結束位置， 反復進行步驟S24至S26的處理（步驟S26)。如此，在不存在 對象物時’對於塗佈區域全區域進行狹縫喷嘴4丨之掃描， 在該塗佈區域的全區域之基板9〇的表面上形成光阻液層。 狹縫喷嘴41移動到噴出結束位置，控制部7就停止光阻用 栗而停止光阻液的喷出，藉由線性馬達5〇及昇降機構43、 44將狹縫喷嘴41退避至待機位置（步驟S28)。與該動作平 行’控制部7停止檢測部45之對象物的檢測。 102712.doc -25- 1295590 卜載物台3停止基板9 〇的吸附，操作者或搬送結構將 基板90從保持面3〇提起，將基板9〇搬出至其次之處理工序 (步驟S29)。 此外亦可在塗佈處理結束時進行光阻液的膜厚的檢測 處理。即，藉由昇降機構43、44將噴嘴支持部40向（+ζ)方 向移動，將間隙感測器42移動至測量高度。此外，藉由線 性馬達50將架橋機構4向（+χ)方向移動，間隙感測器42掃描 塗佈區域，測量與形成在基板9〇上的光阻膜的間隙而傳達 至控制部7。控制部7藉由將在光阻液塗佈前所測量之間隙 值（和基板90的表面的距離）與在光阻液塗佈後所測量之間 隙值（和光阻膜的表面的距離）進行比較，算出基板9 〇上的光 阻膜的厚度，將算出結果顯示在顯示部等。 基板90的搬出處理（步驟S29)結束，在進一步連續對複數 片基板90進行處理時，返回步驟su反復進行處理，在不存 在應處理之基板90時結束處理（步驟S3〇)。 如上所述，本實施形態之基板處理裝置丨配置在從接受由 投光部450a、451a所照射之雷射光之中之直接光之位置偏 離之位置，具備將由投光部450a、45 la所照射之雷射光之 中由對象物所反射之雷射光作為檢測光而接受之受光部 450b、451b，在受先部450b、451b接受檢測光時，藉由檢 測出對象物，受光部450b、45 lb的位置比較曖昧即可，所 以可減輕調整工作之負擔。再者，由於即使甚微只要受光 部450b、45 lb接受檢測光即可檢測出對象物，所以可抑制 基板90的寬度影響，提高精確度。 102712.doc -26- 1295590 此外，藉由受光部450b、45 lb配置在從接受雷射光之直 接光之位置對於狹縫喷嘴41的掃描方向向大致垂直方向偏 移之位置，可抑制由狹縫喷嘴之掃描所發生之振動的影 響。所以’可抑制錯誤檢測，而可取得正確的檢測結果。 此外，具備在狹縫喷嘴41的掃描中檢測和狹縫喷嘴4 j有 相干涉之可能性之對象物之輔助檢測感測器452，輔助檢測 感測器452之受光部452b配置在和投光部452a相對向之位 置，接受由投光部452a所照射之雷射光的直接光，在於受 光部45 2b之直接光的受光量成為特定的臨限值以下時，藉 由檢測出對象物’可檢測之對象物的範圍擴大。 此外，檢測感測器450的投光部450a和檢測感測器45 1的 投光部45 la各自分開配置在保持在載物台3之基板9〇的兩 側，藉此可不受基板的寬度影響而檢測對象物。 此外，藉由檢測部45安裝在移動機構5，即使在更換狹縫 喷嘴41時，亦不需要再次進行檢測部45的位置調整，可使 工作有效化。 <2·第2實施形態> 在第1實施形態以將檢測部45安裝在移動機構5之方式構 成，但檢測部45的安裝位置不限於此，只要係可檢測出對 象物之位置，可安裝在任意處。 圖η係於基於該原理而構成之第2實施形態之基板處理 裝置1a的檢測部45的周邊部之放大圖。基板處理裝置13如 圖11所示，檢測部45安裝在噴嘴支持部40。狹縫噴嘴41盥 上述實施形態同樣，gj定設置在噴嘴支持部Μ，狹縫喷嘴 1027l2.doc -27· 1295590 41和喷嘴支持部40—體移動。在噴嘴支持部4〇固定設置有 狹縫喷嘴41 ^所以，檢測部45以保持和狹縫喷嘴41之相對 距離之狀態而一體移動。 此外，基板處理裝置1&除了檢測部45安裝在喷嘴支持部 4〇之外，具有和第i實施形態之基板處理裝置丨大致同樣之 構成H，對於基板處理裝置1&的動作亦大致和基板處 理裝置1同樣。然@，在基板處理裝置i以載物台3的保持面 30的位置為基準進行檢測感測器彻、451及辅助檢測感測 器452的Z軸方向的位置調整工作，而在基板處理裝置㈣ 狹縫喷嘴41ό0(_Ζ)側的端部為基準進行該等之z軸方向的 位置調整工作。 如上所述，如第2實施形態之基板處理裝置u，即使 ^支持部4G安裝有檢測部45之情形，亦可取得和第！實施形 恶之基板處理裝置1大致同樣的效果。 =’藉由以保持和狹縫喷嘴41之相對距離之狀態而一 =2動之方式安裝有檢測感測器45〇、451及辅助檢測感測 in:進行檢測部45和狹縫噴嘴41的相對距離的調整 狹縫噴嘴41的姿勢（主要_方向的 ==成為—定，可提高檢測精確度。此二 ==:::進:Γ:變更了處理之— 化。 置5周整卫作’可謀求X·作的效率 <3·變形例> 以上，對於本發明之實施方式進行 了說明 但本發明不 102712.doc -28- 1295590 限於上述實施方式，可有多種多樣的變形。 —例如在第2實施形ϋ之基板處理裝£la，㈣了檢測糾 安裝在喷嘴支㈣40 ’但例如檢測部45亦可直接安裝在狭 縫噴嘴41。 在上述實施方式，辅助檢測感測器452各自具備投光部 a及又光σρ 452b。然而，輔助檢測感測器452為僅具備受 光部452b之構成亦可實現。圖16係表示於基於如此之原理 而構成之憂形例之檢測感測器45〇和辅助檢測感測器之 S如圖16所示，將輔助檢測感測器4 5 2的受光部4 5 2 b配置 在與檢測感測器450的投光部450a對向之位置。即，於投光 部450a和受光部452b之位置，以χ軸方向及2軸方向的位置 大致相等之方式配置。若如此配置，受光部45孔會接受從 投光部450a所照射之雷射光的直接光。即使如此構成，辅 助k測感測器452亦可取得和上述實施形態同樣的效果。再 者’藉由輔助檢測感測器452兼作檢測感測器45〇之投光部 45 0a ’可使裝置構成簡化。此外，輔助檢測感測器452使用 之投光部不限於投光部450a，為投光部451a亦可。 【圖式簡單說明】 圖1係本發明之第1實施形態之基板處理裝置之正面圖。 圖2係基板處理裝置之檢測部的周邊部的放大圖。 圖3係表示狹縫噴嘴的掃描範圍和檢測感測器的配置關 係之平面圖。 圖4係表示狹縫噴嘴和檢測感測器的配置關係之右侧面 圖0 102712.doc -29- 1295590 圖5係表示狹缝喷嘴和檢測感測器的配置關係之左側面 圖。 圖6係表示檢測感測器檢測之際不存在對象物時的雷射 光執跡之圖。 圖7係表示檢測感測器檢測之際存在對象物時的雷射光 轨跡之圖。 圖8係說明檢測感測益檢測接近受光部之位置的對象物 時之圖。 圖9係表示基板處理裝置的動作之流程圖。 圖1 〇係表示基板處理裝置的動作之流程圖。 圖11係第2實施形態之基板處理裝置的檢測感測器的周 邊部之放大圖。 圖12係為說明用於先前的塗佈裝置之透過型雷射感測器 檢測干涉物之原理之概念圖。 圖係為說明用於先前的塗佈裝置之透過型雷射感測器 檢測干涉物之原理之概念圖。 圖丨4係為說明用於先前的塗佈裝置之透過型雷射感測器 檢測干涉物之原理之概念圖。 圖15係為說明用於先前的塗佈裝置之透過型雷射感測器 檢測干涉物之原理之概念圖。 圖16係表示於變形例之檢測感測器和輔助檢測感測器之 圖。 【主要元件符號說明】 1? U 基板處理裝置 102712.doc -30- 1295590(Step S23). Further, the discharge start position is a position at which the slit nozzle "is substantially along the side of the (+X) side of the application region. The slit nozzle moves to the discharge start position, and the shutter is used for the photoresist (not shown). The photoresist liquid is transported to the slit nozzle 41, and the slit nozzle sprays the photoresist liquid out of the coating region. Together with the discharge operation, the linear motor 50 moves the slit nozzle 41 to the (9) direction (step S24). The coating area of the substrate 9 is scanned by the slit nozzle 41, and the photoresist is applied. In parallel with the movement operation of step s24, the control unit 7 determines whether or not the object is detected in the same manner as in step S22 (step S25). In step S25', when the control unit 7 determines that the object is detected (in step S25, the control unit 7 stops the linear motor 5〇, the movement of the slit nozzle is stopped), and an alarm is output to The display unit or the like (step 2 and 'in step S22') determines that the detection is substantially the same as that in the control unit 7 in step S27. In this case, when the object is detected on the substrate, it is prevented by immediately stopping the narrow sea movement. The contact between the slit nozzle 41 and the object " 102 712.doc -24- 1295590 It is possible to prevent the slit nozzle 41 or the substrate 9 from being damaged by contact. In addition, since the operator can be notified of an abnormality by outputting an alarm, it is possible to effectively perform recovery work, etc. In order to allow the operator to know the occurrence of the different complaints, the alarm sound may be output via a speaker or the like in any manner. After the execution of step S27, the shutter pump is stopped and the spraying of the photoresist liquid is stopped. The slit nozzle 41 is retracted to the standby position by the linear motor 50 and the elevating mechanisms 43 and 44 (step S28). Further, the substrate 9 is carried out from the substrate processing apparatus (step S29). When the object is detected in step S22, the discharge of the photoresist liquid has not started yet. Therefore, the process of stopping the discharge of the photoresist liquid is not performed. Further, the substrate 9〇 and other substrates carried out as a result of step S27 are executed. 9. The difference between the operator and the transport mechanism is transferred to the reprocessing process. Further, as shown in FIG. 4 and FIG. 5, it is considered that the foreign matter NG adheres to the stage 3, and when the step 27 is performed, the loading is performed. The cleaning of the stage 3 is preferred. On the other hand, when the object is not detected in step S25 (φ N〇 in step S25), based on the output of the linear encoder 51, the control unit 7 checks the position of the slit nozzle 41 while continuing to the slit nozzle. 41 moves to the discharge end position, and repeats the processing of steps S24 to S26 (step S26). Thus, when there is no object, 'the slit nozzle 4 is scanned for the entire area of the coating area, and the coating area is A photoresist layer is formed on the surface of the substrate 9 全 in the entire region. When the slit nozzle 41 is moved to the discharge end position, the control unit 7 stops the photoresist and stops the discharge of the photoresist, and the linear motor 5 The elevating mechanisms 43 and 44 retract the slit nozzle 41 to the standby position (step S28). The control unit 7 stops the detection of the object of the detecting unit 45. 102712.doc -25- 1295590 When the stage 3 stops the adsorption of the substrate 9, the operator or the transfer structure lifts the substrate 90 from the holding surface 3, and carries the substrate 9 to the next processing step (step S29). Further, the film thickness of the photoresist may be detected at the end of the coating process. That is, the nozzle support portion 40 is moved in the (+ζ) direction by the elevating mechanisms 43 and 44, and the gap sensor 42 is moved to the measurement height. Further, the bridge mechanism 4 is moved in the (+χ) direction by the linear motor 50, the gap sensor 42 scans the coating region, and the gap with the photoresist film formed on the substrate 9A is measured and transmitted to the control portion 7. The control unit 7 performs the gap value (the distance from the surface of the substrate 90) measured before the photoresist solution is applied to the gap value (the distance from the surface of the photoresist film) measured after the photoresist solution is applied. In comparison, the thickness of the resist film on the substrate 9 is calculated, and the calculation result is displayed on the display unit or the like. When the processing of the substrate 90 is completed (step S29), when the processing of the plurality of substrates 90 is continued, the processing returns to step su and the processing is terminated. When the substrate 90 to be processed is not present, the processing is terminated (step S3). As described above, the substrate processing apparatus 本 according to the present embodiment is disposed at a position shifted from the position of the direct light among the laser beams irradiated by the light projecting units 450a and 451a, and is provided to be irradiated by the light projecting units 450a and 45la. The light receiving portions 450b and 451b received by the laser light reflected by the object among the laser beams are detected by the light receiving portions 450b and 451b. When the receiving portions 450b and 451b receive the detection light, the light receiving portions 450b and 45b are detected. The location is relatively simple, so the burden of adjustment work can be reduced. Further, since the object can be detected even if the light receiving portions 450b and 45 lb receive the detection light, the influence of the width of the substrate 90 can be suppressed, and the accuracy can be improved. 102712.doc -26- 1295590 In addition, the light receiving portions 450b and 45 lb are disposed at positions shifted from the scanning direction of the slit nozzle 41 in the substantially vertical direction from the position where the direct light receiving the laser light is received, thereby suppressing the slit. The effect of vibrations that occur on the scanning of the nozzle. Therefore, the error detection can be suppressed and the correct detection result can be obtained. Further, an auxiliary detection sensor 452 that detects an object that interferes with the slit nozzle 4j during scanning of the slit nozzle 41 is provided, and the light receiving portion 452b of the auxiliary detection sensor 452 is disposed and projected. The portion 452a receives the direct light of the laser light irradiated by the light projecting portion 452a, and the object "obtains" when the light receiving amount of the direct light of the light receiving portion 45b is equal to or less than a specific threshold value. The range of objects to be detected is expanded. Further, the light projecting portion 450a of the detecting sensor 450 and the light projecting portion 45 la of the detecting sensor 45 1 are separately disposed on both sides of the substrate 9A held by the stage 3, thereby being free from the width of the substrate The object is detected by the influence. Further, since the detecting unit 45 is attached to the moving mechanism 5, even when the slit nozzle 41 is replaced, it is not necessary to perform the positional adjustment of the detecting unit 45 again, and the operation can be made effective. <2. Second Embodiment> In the first embodiment, the detecting unit 45 is attached to the moving mechanism 5, but the mounting position of the detecting unit 45 is not limited thereto, and the position of the object can be detected. Can be installed anywhere. Fig. η is an enlarged view of a peripheral portion of the detecting unit 45 of the substrate processing apparatus 1a according to the second embodiment constructed based on this principle. As shown in Fig. 11, the substrate processing apparatus 13 is attached to the nozzle support unit 40. Slot Nozzle 41 同样 In the same manner as in the above embodiment, gj is set in the nozzle support portion Μ, and the slit nozzles 1027l2.doc -27· 1295590 41 and the nozzle support portion 40 are moved. Since the slit nozzle 41 is fixedly provided to the nozzle support portion 4, the detecting portion 45 integrally moves in a state of maintaining the relative distance from the slit nozzle 41. In addition, the substrate processing apparatus 1 & the detection unit 45 is attached to the nozzle support unit 4, and has the same configuration H as the substrate processing apparatus 第 of the i-th embodiment, and the operation of the substrate processing apparatus 1 & The processing device 1 is the same. However, in the substrate processing apparatus i, the position adjustment operation of the detection sensor 451 and the auxiliary detection sensor 452 in the Z-axis direction is performed based on the position of the holding surface 30 of the stage 3, and the substrate processing apparatus is used. (4) The position adjustment operation in the z-axis direction is performed based on the end portion on the side of the slit nozzle 41ό0 (_Ζ). As described above, in the substrate processing apparatus u according to the second embodiment, even if the detection unit 45 is attached to the support unit 4G, it is possible to obtain the sum! The substrate processing apparatus 1 having the same effect is substantially the same. = 'detection sensors 45 〇, 451 and auxiliary detection sensing in a manner of maintaining a relative distance from the slit nozzle 41 by one or two movements: performing the detecting portion 45 and the slit nozzle 41 Adjusting the posture of the slit nozzle 41 with respect to the relative distance (==================================================================================== "Efficacy of X-making" <3. Modifications> The embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments, and various modifications are possible. For example, in the substrate processing apparatus of the second embodiment, (4) the detection and correction are attached to the nozzle holder (four) 40'. However, for example, the detecting portion 45 may be directly attached to the slit nozzle 41. In the above embodiment, the auxiliary detection sensing is performed. Each of the heaters 452 includes a light projecting unit a and a light σρ 452b. However, the auxiliary detecting sensor 452 may be configured to include only the light receiving unit 452b. Fig. 16 is a view showing a configuration example based on such a principle. Detecting sensor 45〇 and auxiliary detection sensor S As shown in Fig. 16, the light receiving portion 425b of the auxiliary detecting sensor 452 is disposed at a position opposed to the light projecting portion 450a of the detecting sensor 450. That is, at the light projecting portion 450a and the light receiving portion 452b. The position is arranged such that the positions in the x-axis direction and the two-axis direction are substantially equal. When arranged in this way, the light receiving portion 45 receives direct light of the laser light irradiated from the light projecting portion 450a. Even if it is configured, the auxiliary k senses The detector 452 can also achieve the same effect as the above-described embodiment. Further, the auxiliary detecting sensor 452 can also serve as the light projecting portion 45 0a ' of the detecting sensor 45 可使 to simplify the device configuration. The light projecting unit used in the detector 452 is not limited to the light projecting unit 450a, and may be the light projecting unit 451a. [Brief Description of the Drawings] Fig. 1 is a front view of a substrate processing apparatus according to a first embodiment of the present invention. An enlarged view of a peripheral portion of a detecting portion of a substrate processing apparatus. Fig. 3 is a plan view showing a relationship between a scanning range of a slit nozzle and a detecting sensor. Fig. 4 is a view showing a configuration relationship between a slit nozzle and a detecting sensor. Right side view 0 102712.doc -29- 12955 Fig. 5 is a left side view showing the arrangement relationship between the slit nozzle and the detecting sensor. Fig. 6 is a view showing the laser light trace when the detecting object is detected without detecting the object. Fig. 7 shows the detecting. Fig. 8 is a view showing a state in which the object of the position of the light receiving unit is detected when the sensor is detected. Fig. 9 is a flow chart showing the operation of the substrate processing apparatus. Fig. 1 is a flow chart showing the operation of the substrate processing apparatus. Fig. 11 is an enlarged view of a peripheral portion of the detection sensor of the substrate processing apparatus according to the second embodiment. Figure 12 is a conceptual diagram illustrating the principle of detecting interferences by a transmissive laser sensor of a prior coating apparatus. The figure is a conceptual diagram illustrating the principle of detecting interfering objects by a transmissive laser sensor of a prior coating apparatus. Figure 4 is a conceptual diagram illustrating the principle of detecting interfering objects by a transmissive laser sensor of a prior coating apparatus. Fig. 15 is a conceptual diagram for explaining the principle of detecting an interference by a transmission type laser sensor of the prior coating apparatus. Fig. 16 is a view showing the detection sensor and the auxiliary detection sensor of the modification. [Main component symbol description] 1? U substrate processing device 102712.doc -30- 1295590
3 載物台 30 保持面 41 狹縫喷嘴 43, 44 昇降機構 45 檢測部 450, 451 檢測感測器 450a，451a 投光部 450b， 451b 受光部 452 輔助檢測感測器 452a 投光部（輔助投光部） 452b 受光部（輔助受光部） 5 移動機構 50 線性馬達 7 控制部 90 基板 DRL 直接光 E0 掃描範圍 LFL 反射光 NG 異物3 stage 30 holding surface 41 slit nozzle 43, 44 lifting mechanism 45 detecting unit 450, 451 detecting sensor 450a, 451a light projecting unit 450b, 451b light receiving unit 452 auxiliary detecting sensor 452a light projecting unit (auxiliary projection Light part) 452b Light receiving unit (auxiliary light receiving unit) 5 Moving mechanism 50 Linear motor 7 Control unit 90 Substrate DRL Direct light E0 Scanning range LFL Reflected light NG Foreign matter
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