[go: up one dir, main page]

TWI256482B - Radiation detecting device and method of manufacturing the same - Google Patents

Radiation detecting device and method of manufacturing the same

Info

Publication number
TWI256482B
TWI256482B TW093106518A TW93106518A TWI256482B TW I256482 B TWI256482 B TW I256482B TW 093106518 A TW093106518 A TW 093106518A TW 93106518 A TW93106518 A TW 93106518A TW I256482 B TWI256482 B TW I256482B
Authority
TW
Taiwan
Prior art keywords
detecting device
radiation detecting
sensor panel
manufacturing
same
Prior art date
Application number
TW093106518A
Other languages
Chinese (zh)
Other versions
TW200424549A (en
Inventor
Kazumi Nagano
Tomoyuki Tamura
Satoshi Okada
Katsuro Takenaka
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200424549A publication Critical patent/TW200424549A/en
Application granted granted Critical
Publication of TWI256482B publication Critical patent/TWI256482B/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/244—Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Abstract

In a radiation detecting device having a sensor panel in which a plurality of photoelectric conversion elements are formed on one surface of a support substrate, a moisture-proof protective layer is laminated on a surface of the sensor panel on which the photoelectric conversion elements are formed, and a warp correction layer is laminated on the other surface of the sensor panel, and the moisture-proof protective layer and the warp correction layer are formed of a resin film having a drawing or extrusion direction, respectively, and bonded together so as to make the drawing or extrusion directions of both the resin films similar to each other. With the formation of the radiation detecting device, the warp of the radiation detection panel induced by a thermal displacement is prevented.
TW093106518A 2003-03-12 2004-03-11 Radiation detecting device and method of manufacturing the same TWI256482B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003066728A JP4289913B2 (en) 2003-03-12 2003-03-12 Radiation detection apparatus and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW200424549A TW200424549A (en) 2004-11-16
TWI256482B true TWI256482B (en) 2006-06-11

Family

ID=32959252

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093106518A TWI256482B (en) 2003-03-12 2004-03-11 Radiation detecting device and method of manufacturing the same

Country Status (5)

Country Link
US (1) US7105830B2 (en)
JP (1) JP4289913B2 (en)
KR (1) KR100564519B1 (en)
CN (1) CN1276270C (en)
TW (1) TWI256482B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI486618B (en) * 2012-02-23 2015-06-01 Toshiba Kk Radiation detector and manufacturing method thereof
US11522099B2 (en) 2017-05-03 2022-12-06 Shenzhen Xpectvision Technology Co., Ltd. Method of making radiation detector

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7355184B2 (en) * 2003-04-07 2008-04-08 Canon Kabushiki Kaisha Radiation detecting apparatus and method for manufacturing the same
US7193218B2 (en) * 2003-10-29 2007-03-20 Canon Kabushiki Kaisha Radiation detection device, method of producing the same, and radiation image pick-up system
JP2006098239A (en) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd Radiological image conversion panel
JP2006098241A (en) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd Radiation image conversion panel
JP4537322B2 (en) * 2005-01-13 2010-09-01 アロカ株式会社 Manufacturing method of scintillator member and manufacturing method of radiation measuring apparatus
DE602006008994D1 (en) * 2005-01-13 2009-10-22 Aloka Co Ltd Scintillator part and manufacturing method therefor, and radiation measuring device
US20070001100A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Light reflection for backside illuminated sensor
FR2891401B1 (en) * 2005-09-23 2007-10-26 Thales Sa REALIZATION OF A RADIATION DETECTOR.
JP2007093545A (en) * 2005-09-30 2007-04-12 Toshiba Corp Radiation detector
US7973380B2 (en) * 2005-11-23 2011-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for providing metal extension in backside illuminated sensor for wafer level testing
US7910892B2 (en) * 2005-12-22 2011-03-22 Kabushiki Kaisha Toshiba Method for manufacturing X-ray detector and X-ray detector
JP4921180B2 (en) * 2006-01-25 2012-04-25 キヤノン株式会社 Radiation detection apparatus and radiation imaging system
JP4537327B2 (en) * 2006-02-07 2010-09-01 アロカ株式会社 Method for manufacturing radiation measuring apparatus and method for manufacturing scintillator member
US7648851B2 (en) * 2006-03-06 2010-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating backside illuminated image sensor
US7638852B2 (en) * 2006-05-09 2009-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making wafer structure for backside illuminated color image sensor
US8704277B2 (en) * 2006-05-09 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Spectrally efficient photodiode for backside illuminated sensor
US7791170B2 (en) 2006-07-10 2010-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a deep junction for electrical crosstalk reduction of an image sensor
US20080079108A1 (en) * 2006-09-29 2008-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method for Improving Sensitivity of Backside Illuminated Image Sensors
US8436443B2 (en) 2006-09-29 2013-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Backside depletion for backside illuminated image sensors
JP2008215951A (en) * 2007-03-01 2008-09-18 Toshiba Corp Radiation detector
CN101542635B (en) * 2007-03-27 2013-01-23 株式会社东芝 Scintillator panels and radiation detectors
US20080237761A1 (en) * 2007-04-02 2008-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for enhancing light sensitivity for backside illumination image sensor
JP5004848B2 (en) * 2007-04-18 2012-08-22 キヤノン株式会社 Radiation detection apparatus and radiation detection system
FR2916575B1 (en) * 2007-05-23 2009-09-18 Trixell Sas Soc Par Actions Si METHOD FOR PRODUCING A RADIATION DETECTOR
US7656000B2 (en) * 2007-05-24 2010-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Photodetector for backside-illuminated sensor
CN101743507B (en) * 2007-07-17 2014-03-05 迪睿合电子材料有限公司 Image display device and method for manufacturing same
JP2009025258A (en) * 2007-07-24 2009-02-05 Toshiba Corp Radiation detector
US7999342B2 (en) 2007-09-24 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd Image sensor element for backside-illuminated sensor
JP4764407B2 (en) 2007-11-20 2011-09-07 東芝電子管デバイス株式会社 Radiation detector and manufacturing method thereof
KR100994836B1 (en) * 2008-04-25 2010-11-17 주식회사바텍 Dental x-ray imaging system with large digital sensor
KR100994837B1 (en) * 2008-04-25 2010-11-17 주식회사바텍 Mammography with large area digital sensor
KR100988576B1 (en) * 2008-04-25 2010-10-18 주식회사바텍 Medical X-ray City Photographing Device
KR100994838B1 (en) * 2008-04-25 2010-11-17 주식회사바텍 Digital imaging diagnostics with large area digital sensor
JP2010114409A (en) * 2008-10-10 2010-05-20 Sony Corp Soi substrate and method for manufacturing the same, solid-state image pickup device and method for manufacturing the same, and image pickup device
US20110233405A1 (en) * 2008-12-05 2011-09-29 Bae Systems Plc Radiation detector
JP5369906B2 (en) * 2009-06-03 2013-12-18 コニカミノルタ株式会社 Radiation image conversion panel and radiation image detection apparatus
CN102870008A (en) * 2010-04-30 2013-01-09 富士胶片株式会社 Radiation imaging device, radiation imaging system, and method for affixing radiation conversion panel in radiation imaging device
JP2011247686A (en) * 2010-05-25 2011-12-08 Fujifilm Corp Imaging apparatus for radiation image
JP5473835B2 (en) * 2010-08-31 2014-04-16 富士フイルム株式会社 Radiation detector, radiation imaging apparatus, and method of manufacturing radiation detector
WO2012032797A1 (en) * 2010-09-07 2012-03-15 コニカミノルタエムジー株式会社 Process for manufacture of radiographic image detector and radiographic image detector
CN102466808B (en) * 2010-11-09 2014-06-18 北京大基康明医疗设备有限公司 Amorphous silicon cesium iodide digital X ray flat panel detector
DE102010062040A1 (en) * 2010-11-26 2012-05-31 Siemens Aktiengesellschaft Method for making a scintillator photosensor sandwich, scintillator photosensor sandwich and radiation detector
DE102010062033A1 (en) * 2010-11-26 2012-05-31 Siemens Aktiengesellschaft Scintillator layer, X-ray detector and method for preparing a scintillator layer for application to a photosensor layer and production of an X-ray detector or X-ray detector element
JP5792958B2 (en) * 2011-01-13 2015-10-14 キヤノン株式会社 Radiation imaging apparatus, radiation imaging system, and method of manufacturing radiation imaging apparatus
JP2012154811A (en) * 2011-01-26 2012-08-16 Canon Inc Scintillator panel and method for manufacturing the same, and radiation detection device
JP5677136B2 (en) * 2011-02-24 2015-02-25 富士フイルム株式会社 Radiation image detection apparatus and radiographic cassette
JP2012177623A (en) * 2011-02-25 2012-09-13 Fujifilm Corp Radiation image detector and method for manufacturing radiation image detector
US9211565B2 (en) 2012-02-28 2015-12-15 Carestream Health, Inc. Adhesive layer for digital detectors
JP2013217769A (en) * 2012-04-09 2013-10-24 Canon Inc Radiation detection apparatus
JP2014074595A (en) * 2012-10-02 2014-04-24 Canon Inc Radiation imaging apparatus, radiation imaging system, and method of manufacturing radiation imaging apparatus
JP6092568B2 (en) * 2012-10-11 2017-03-08 キヤノン株式会社 Radiation detection apparatus and radiation detection system
US9935152B2 (en) 2012-12-27 2018-04-03 General Electric Company X-ray detector having improved noise performance
JP6310216B2 (en) * 2013-09-06 2018-04-11 キヤノン株式会社 Radiation detection apparatus, manufacturing method thereof, and radiation detection system
EP2857866B1 (en) * 2013-10-02 2019-06-19 Rayence Co., Ltd. X-ray sensor and method of manufacturing the same
US9917133B2 (en) 2013-12-12 2018-03-13 General Electric Company Optoelectronic device with flexible substrate
EP3117204B1 (en) 2014-03-13 2021-06-16 General Electric Company Curved digital x-ray detector for weld inspection
US9526468B2 (en) 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
JP6487263B2 (en) * 2015-04-20 2019-03-20 浜松ホトニクス株式会社 Radiation detector and manufacturing method thereof
DE102016210935B4 (en) * 2016-06-20 2020-07-09 Siemens Healthcare Gmbh X-ray detector with a non-transparent intermediate layer
CN106873829B (en) * 2017-01-26 2020-08-07 业成科技（成都）有限公司 Touch display and manufacturing method thereof
JP6968668B2 (en) * 2017-11-09 2021-11-17 キヤノン電子管デバイス株式会社 Radiation detection module and radiation detector
JP7029217B2 (en) * 2018-04-03 2022-03-03 キヤノン電子管デバイス株式会社 Radiation detector
US10734540B1 (en) * 2019-07-03 2020-08-04 Advanced Semiconductor Engineering, Inc. Optical device and method for manufacturing the same
US20230391030A1 (en) * 2020-10-15 2023-12-07 Kuraray Co., Ltd. Plastic scintillating fiber and its manufacturing method
WO2022079956A1 (en) * 2020-10-15 2022-04-21 株式会社クラレ Plastic scintillating fiber and production method therefor
JP7569070B2 (en) 2020-10-27 2024-10-17 株式会社Nsc Method for manufacturing a functional film-attached substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3235717B2 (en) * 1995-09-28 2001-12-04 キヤノン株式会社 Photoelectric conversion device and X-ray imaging device
JP3957803B2 (en) 1996-02-22 2007-08-15 キヤノン株式会社 Photoelectric conversion device
JP3789646B2 (en) * 1998-06-19 2006-06-28 浜松ホトニクス株式会社 Radiation image sensor
US6949750B2 (en) * 2000-03-30 2005-09-27 Matsushita Electric Industrial Co., Ltd. Radiation detecting element and method of manufacturing the same
US6835936B2 (en) * 2001-02-07 2004-12-28 Canon Kabushiki Kaisha Scintillator panel, method of manufacturing scintillator panel, radiation detection device, and radiation detection system
US6847041B2 (en) * 2001-02-09 2005-01-25 Canon Kabushiki Kaisha Scintillator panel, radiation detector and manufacture methods thereof
JP4522044B2 (en) * 2002-11-15 2010-08-11 キヤノン株式会社 Radiography equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI486618B (en) * 2012-02-23 2015-06-01 Toshiba Kk Radiation detector and manufacturing method thereof
US11522099B2 (en) 2017-05-03 2022-12-06 Shenzhen Xpectvision Technology Co., Ltd. Method of making radiation detector
TWI797123B (en) * 2017-05-03 2023-04-01 中國大陸商深圳幀觀德芯科技有限公司 A method of making a radiation detector

Also Published As

Publication number Publication date
CN1276270C (en) 2006-09-20
JP2004281439A (en) 2004-10-07
KR20040081369A (en) 2004-09-21
CN1530667A (en) 2004-09-22
US7105830B2 (en) 2006-09-12
JP4289913B2 (en) 2009-07-01
KR100564519B1 (en) 2006-03-29
TW200424549A (en) 2004-11-16
US20040178350A1 (en) 2004-09-16

Similar Documents

Publication Publication Date Title
TWI256482B (en) Radiation detecting device and method of manufacturing the same
JP5367230B2 (en) Solar cell module
KR101314698B1 (en) Backside protective sheet for solar cell and solar cell module comprising the same
JP5806266B2 (en) Improved photovoltaic device and method
WO2009063932A1 (en) Rear surface protection sheet for solar cell module and solar cell module protected by such protection sheet
WO2007146605A3 (en) Infrared radiation reflecting insulated glazing unit
EP2416374A1 (en) Solar cell module with layers of design for integration into buildings
NZ594636A (en) Transparent, weather-resistant barrier film, production by lamination, extrusion lamination or extrusion coating
MX2012004933A (en) Flexible solar panel with a multilayer film.
JP2005509265A (en) Method for producing photovoltaic thin film module
JP7543292B2 (en) Functional device to be incorporated into passable road surface and method for manufacturing passable road surface including the same
US20150155822A1 (en) Improved flexible high modulus photovoltaic building sheathing member
KR102113839B1 (en) Back sheet and solar cell module including the same
ITTO20110849A1 (en) FLEXIBLE PHOTOVOLTAIC PANEL.
JP2017153195A (en) Solar cell module with snow melting function
US20130298969A1 (en) Solar module
JP2012064767A (en) Solar battery module
TW201222739A (en) Sealing layer for devices
JP5176268B2 (en) Solar cell module
JP2006310680A (en) Thin film solar cell module
WO2009043340A3 (en) Photovoltaic module having at least one solar cell
JP5109348B2 (en) Solar cell back surface protection sheet and solar cell module
JP2011159669A (en) Solar cell
JP2012054494A5 (en)
JP2012038778A (en) Solar cell module and method for manufacturing the same

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees