1237163 13676twfl.doc/0061237163 13676twfl.doc / 006
il爹正臼期94.5.11 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體製程，且特別是有關於一 種曝光方法。 【先前技術】 薄膜電晶體液晶顯示器主要由薄膜電晶體陣列基板 (Thin ：Film Transistor array，TFT array)、彩色濾光基板 (Color Filter，C/F )和液晶層（Uquid crystal layer )所構成， 其中薄膜電晶體陣列基板包括多個以陣列排列之薄膜電晶 體，以及與每一薄膜電晶體對應配置之晝素電極（pixel electrode)。薄膜電晶體之操作原理與傳統的半導體M〇s 元件相類似’都是具有閘極（gate)、汲極（drain)以及 源極（source)的元件，而薄膜電晶體之功能係用以作為 液晶顯示晝素單元的開關元件。 一般而言，薄膜電晶體陣列基板之製程通常包括多次 的微影（photolithography)及蝕刻（etching)製程，意即 藉由曝光（exposure)的動作，以將光罩上的圖案（pattem) 轉移至先前形成於基板上之光阻層（ph〇t〇resist layer)， 並經顯影（development)的步驟圖案化光阻層，之後再利 用此圖案化之光阻層作為蝕刻罩幕對基板上^ 刻，以依序形成薄膜電晶體之閘極、通道層、源汲極、 畫素電極以及保護層等主要構件。習知之微影製程所使用 的曝光機台可供光罩與基板放置對準，以使光罩上之圖案 經由投影光學系統投影曝光於基板上。此外，就曝光^式 1237163 修正曰期94.5.11 13676twfl.doc/006 而cr，主要可分為總括型曝光與掃描型曝光兩種，其中總 括型曝光係使光罩之圖案全體同時轉移於基板上，而掃描 型曝光係使光罩與基板相對移動，以使光罩之圖案連續地 轉移於基板上。 值得一提的是，隨著液晶面板的尺寸需求日益增大， 曝光製程之圖案的精確度也需相對增加。然而，由於薄膜 電晶體陣列基板上之各個元件膜層對於溫度變化會產生不 同程度的應變（strain)，使得基板在清洗、曝光、成膜、 餘刻等製財，相為元伽層所造紅麵力（血咖） 而產生變形，而導致光罩圖案在曝光後發生不匹配的現 象。因此’目前的曝光機台多配置有補正機構㈤化加i〇n mechani^n)，以避免基板上之膜層圖案相互偏離，其作 動方式係先於每-道曝光製程之後制基板上之定位標記 曰(fiducial mark)的位置，以推算基板上之元件膜層的變形 量。接著，按照計算結果分別進行各個維度（dimensi〇n) 之補正，其中包括位移（shift)補正，用以校正圖案之χ 軸方向及γ軸方向之位置誤差；倍率（scale)補正，用以 权正圖案之放大或縮小誤差；以及迴轉（論te)補正，用 以校正隨沿Z軸之扭觀形㈣。紐，再將下一道光 罩之圖案藉由補正後之投影光學系統而轉移至基板之正確 的位置上。 …然而，雖然習知技術已可對各膜層之圖案進行即時之 補正’但由於基板本身即會受到溫度變化而產生相當程度 之變形’因此即使每—個元件的各膜層之間可準確對位， 1237163 13676twfl.doc/006 修正曰期94.5.11 基板之變_纽得形纽絲 正痛的位置上’故習知之曝先方法並無法對基 形提供補正（calibrate)。請參考圖认〜冗，1 知之多種薄膜電晶断列基板的變形膜^ 如此一來’當薄膜電晶體陣列基板與彩色濾光基板組 立之後’便可能發生彩色濾、光基板之黑矩陣（Black Matrix， BM)热法與薄膜電晶體陣列基板之主動區域内的薄膜電 晶體準確對位的問題，因而導致液晶面板漏光（light leakage)的現象，更嚴重者將會引起串音（cross-talk)現 象與對比（contrast)不足（暗態亮度過高）等問題。 【發明内容】 f,J基板⑽例域有-主動區域no,其内配置;= 薄膜電晶體（树示），岐立原點1()2係設 體陣列基板刚之左上角。如圖1A〜1C所示，薄膜電晶 體陣列基板1〇〇係沿各轉度產生雜與非雜之變形， 並連帶使縣祕域UO偏離縣默之位置或產生大小 以及形狀上的變化，其中變形後之區域係以虛線表示。 有鑑於此’本發明的目的就是在提供一種可對基板之 變形提供預先補正的曝光方法，以使得曝光之圖案可位於 正確的位置上，進而提高製程之良率。 本發明的另一目的就是在提供一種可對基板之變形 提供預先補正的曝光方法，以提高薄膜電晶體陣列基板與 形色濾、光基板之組立良率，因而可有效避免液晶面板漏 光、對比不佳或串音等問題。 1237163 修正日期94.5.11 13676twfl.doc/006 基於上述目的，本發明提出一種曝光方法，其適用於 一曝光機台，以期在一基板上形成一目標曝光圖案，其中 基板會文一外界因素影響而變形。首先，決定基板之一預 設變形量，以提供對應之一補正值。接著，依據補正值來 調整曝光機台之曝光參數。之後，藉由調整後之曝光參數 來對基板進行曝光，以在基板上形成一補正後之曝光圖 案，其中補正後之曝光圖案會在基板變形之後逼近目標曝 光圖案。 在本發明之曝光方法中，可能造成基板變形之外界因 素例如是溫度變化。此外，決定基板之預設變形量的方法 例如是提供-樣本基板，並且制樣本基板受外界因素影 響之後的-變形量，以作為基板之預設變形量。另外，調 整曝光機自之曝光參數时法例如紐位 正以及旋轉補正等方式。 們佣 能產: 曝ί方法係於曝光前依據基板可 4生作。如此 案，因而可提供較佳之製程^近所心成之目標曝光圖 為讓本發明之上述和其他目的、特徵和㈣ 易憧，下文特舉較佳實施例，並配合_ ^更， 明如下。 飞’作詳細說 【實施方式】 下文係舉薄膜電晶體陣縣板之製程_佳實施例 I2371363t. wfl.doc/〇〇6 修正日期94.5.11 來説明本發明之曝氺 是由一玻璃基板經過多道。電晶體陣列基板例如 而=道蝴程例如以 :二::光罩上的圖案二==了 =上;;板之光阻層，並以圖案化之光阻 ;:極4道層有、_==== _素的:響 ’因此本發明提出下列之曝光方法，其可對ΐ 的曝雜或雜性之觀，以在基板上形成精確 的流^相2’綺林發攸難實施狀曝光方法 202、百t ’在一曝光機台内載入一原始之曝光參數（步驟 與系姑ί ί機台例如包括光罩載台、基板載台以及投影光 :罩盥ίΓ置’其中光罩載台與基板載台係分別用以承載 〜板’而透過曝光參數可控制光罩載台與基板載台 ==移動以及調整投影光學系統之光路等，以將光罩之 主移至基板上。值得一提的是，在不考慮基板可 能變 至,1—月开乂下’右以此原始之曝光參數進行曝光，理應能得 —目標的曝光圖案，然而實際上，卻可能因為基板之變 口而導致曝光圖案偏離基板上所期望的位置。 因此，本發明係依據基板之一預設變形量來求得對應 1237163 13676twfl.doc/006 修正曰期94.5.11 之一 補正值（步驟2〇4)，盆中輔 類型的變形加以補正^/、、^正值可針對基板之各種 施之說明）。在—，例田J /式請參考下文中步驟 受到相同之外界因素;響：產樣 板之變形量的流叫種量測樣本基 驟302)，並且，選定樣本基板上之―:、板上之—原點（步 其中原點盘詈制Et 土 里測點（步驟304 )， 著，量測料*旦、^例如可位於基板上之任何位置。接 座ί= 306)。然後，將變形前之相對 變形量（步驟3〇8)。當然，在η基板之 之多之一經驗數據’其例如是在先前 光機=曝便補正值來調整曝 原有之位移補正、比例補正以及旋轉補二 進行―預先補償的動作，以使得= 的位置上。簡單來說，位移補正係調 二jr之一位移參數的χ、γ設定值，比例補正係調 正曝光機。之-比例參數的又、丫設定值， 調整曝光機台之一旋轉參數。 轉補係 之後，藉由調整後之曝光參數來對基板進行曝光，以 在基板上形成一補正後之曝光圖案（步驟208)。其中， 丄237163 修正曰期94.5.11 13676twfl.doc/〇〇6 -ί:之:光圖案相較於目標曝光圖案具有 較於目標曝光_且:=正可使補正後之曝光圖案相 正可使補正後^光収的放大或縮小，而旋轉補 上m 之曝先圖案相較於目標曝光圖案具有一亩庚 疋轉，因此藉由位移補、 = 又 變化來對基板之：===補 補償程度亦同情況的變形’各參數所需提供的 ΓΓ 不同。如此一來，經上述之預先補正後所 2之曝光圖案將會在基板變形之後ϋ近所期望之目以 極=房而#由此_方法及後續製程所形成之例“ 脾乂 =層n汲極、畫素紐以及賴層等主要構件 將在基板變形後仍位於正確的位置上，因而有助於提 膜電晶體陣列基板與彩色濾光基板組立時的良率，避免面 板漏光、對比不佳或串音等問題。 值得/主思的是，上述實施例僅繪示薄膜電晶體陣列基 板之一道光罩的曝光製程，然而實際上，本發明之曝光方 法適用於薄膜電晶體陣列基板的任一道光罩製程或^道光 罩製程中，且同樣可達到提高曝光圖案之準確率的功效。 此外，在本發明之其他實施例中，本發明更可在每一道光 罩製私元成之後量測基板之變形量，再依據所測得之變形 量修正下一道光罩製程之曝光參數，以提供更佳的補正效 1237163 13676twfl .doc/006 修正日期94.5.11 雖然上述實施例係以薄膜電晶體陣列基板為較佳每 施例來說明本發明之曝光方法，然而在其他實施例中，^ 發明之曝光方法亦可翻於例如純濾光基板或其他元 之曝光製程上。il father orthopedic period 94.5.11 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a semiconductor process, and in particular to an exposure method. [Previous technology] Thin film transistor liquid crystal displays are mainly composed of a thin film transistor array substrate (Thin: Film Transistor array, TFT array), a color filter substrate (Color Filter (C / F)), and a liquid crystal layer (Uquid crystal layer). The thin-film transistor array substrate includes a plurality of thin-film transistors arranged in an array, and a pixel electrode disposed corresponding to each thin-film transistor. The operation principle of a thin film transistor is similar to that of a conventional semiconductor MOS device. 'All are devices with a gate, a drain, and a source. The function of the thin film transistor is to serve as Liquid crystal display switching element. Generally speaking, the thin film transistor array substrate manufacturing process usually includes multiple photolithography and etching processes, which means that the pattern on the photomask is transferred by the action of exposure. To the photoresist layer previously formed on the substrate, and patterning the photoresist layer through a development step, and then using the patterned photoresist layer as an etching mask on the substrate ^ The main components such as the gate, channel layer, source drain, pixel electrode, and protective layer of the thin film transistor are sequentially formed. The exposure machine used in the conventional lithography process can place the mask and the substrate in alignment, so that the pattern on the mask is projected and exposed on the substrate through the projection optical system. In addition, the exposure method is 1237163 modified date 94.5.11 13676twfl.doc / 006, and cr can be divided into two types: collective exposure and scanning exposure. The collective exposure is to transfer the entire pattern of the photomask to the substrate at the same time. On the other hand, the scanning exposure system relatively moves the photomask and the substrate so that the pattern of the photomask is continuously transferred on the substrate. It is worth mentioning that with the increasing demand for the size of liquid crystal panels, the accuracy of the pattern in the exposure process also needs to be relatively increased. However, as each element film layer on the thin-film transistor array substrate has different degrees of strain for temperature changes, the substrate is made of materials such as cleaning, exposure, film formation, and time lapse, which is made by the element layer. Red face strength (blood coffee) deforms, which causes the mask pattern to mismatch after exposure. Therefore, most of the current exposure machines are equipped with a correction mechanism (i + n mechani ^ n) to prevent the film patterns on the substrate from deviating from each other. The operation method is to make the substrate on the substrate after each exposure process. The position of the fiducial mark is positioned to estimate the amount of deformation of the element film layer on the substrate. Then, according to the calculation results, each dimension (dimensi) is corrected, including shift correction, which is used to correct the position error of the pattern in the χ-axis direction and γ-axis direction; scale correction is used to weight Magnification or reduction errors of positive patterns; and rotation (on te) correction to correct distortions along the Z axis. Then, the pattern of the next mask is transferred to the correct position of the substrate by the corrected projection optical system. … However, although the conventional technology can already correct the pattern of each film layer 'but the substrate itself will be subject to a considerable degree of deformation due to temperature changes', so even between each film layer of each component can be accurately Alignment, 1237163 13676twfl.doc / 006 Correction date 94.5.11 Change of the substrate _ Newt shape is in the position of the pain of 'News', so the conventional method of exposure cannot provide correction for the basic shape (calibrate). Please refer to the drawings ~ Redundant, 1 known deformation films of thin film transistor array substrates ^ In this way, "after the thin film transistor array substrate and the color filter substrate are assembled", a black matrix of color filters and light substrates may occur ( Black Matrix (BM) thermal method and the problem of accurate alignment of thin film transistors in the active area of thin film transistor array substrates, leading to the phenomenon of light leakage in liquid crystal panels, and more serious cases will cause cross-talk (cross- talk) phenomenon and insufficient contrast (dark state brightness is too high) and other issues. [Summary of the invention] f, J substrate example domain has-active area no, which is arranged inside; = thin film transistor (tree display), Qi Li origin 1 () 2 is the upper left corner of the device array substrate. As shown in FIGS. 1A to 1C, the thin film transistor array substrate 100 generates hetero and non-hybrid deformation along each rotation, and also causes the county secret area UO to deviate from the location of the county silent or cause changes in size and shape. The deformed area is indicated by dotted lines. In view of this, the object of the present invention is to provide an exposure method that can provide a pre-correction for the deformation of the substrate, so that the exposed pattern can be located at the correct position, thereby improving the yield of the process. Another object of the present invention is to provide an exposure method that can provide a pre-correction for the deformation of the substrate, so as to improve the assembly yield of the thin film transistor array substrate, the shape filter, and the light substrate, thereby effectively avoiding light leakage and contrast of the liquid crystal panel. Poor or crosstalk issues. 1237163 Revised date 94.5.11 13676twfl.doc / 006 Based on the above purpose, the present invention proposes an exposure method, which is applicable to an exposure machine, with a view to forming a target exposure pattern on a substrate, wherein the substrate may be affected by external factors. Deformation. First, determine a preset amount of deformation of one of the substrates to provide a corresponding one of the correction values. Then, adjust the exposure parameters of the exposure machine according to the correction value. After that, the substrate is exposed through the adjusted exposure parameters to form a corrected exposure pattern on the substrate, wherein the corrected exposure pattern will approach the target exposure pattern after the substrate is deformed. In the exposure method of the present invention, external factors that may cause substrate deformation are, for example, temperature changes. In addition, a method for determining a preset deformation amount of the substrate is, for example, providing a sample substrate, and preparing a sample substrate after being affected by external factors, the deformation amount is used as the predetermined deformation amount of the substrate. In addition, the method of adjusting the exposure parameters of the exposure machine, such as button position adjustment and rotation correction, is used. Our production: The exposure method is based on the substrates that can be produced before exposure. In this case, a better manufacturing process can be provided. A target exposure map that is close to what is intended. In order to make the above and other objectives, features, and easiness of the present invention easier, the preferred embodiments are described below, and the following are described in conjunction with the following. Fei's detailed description [Embodiment] The following is a process of a thin film transistor array board_best example I2371363t. Wfl.doc / 〇〇6 revision date 94.5.11 to explain the exposure of the present invention is a glass substrate After multiple passes. For example, the transistor array substrate is as follows: two :: the pattern on the reticle two ==== on ;; the photoresist layer of the board, and the patterned photoresist; _ ==== _ 素 的: 响 'Therefore, the present invention proposes the following exposure method, which can observe the exposure or heterogeneity of radon to form an accurate flow on the substrate. Implementation of the exposure method 202, one hundred t 'load an original exposure parameter in an exposure machine (steps and systems) For example, the machine platform includes a photomask stage, a substrate stage, and a projection light: a mask. Among them, the mask stage and the substrate stage are respectively used to carry a ~ plate, and the exposure stage can control the mask stage and the substrate stage == movement and adjustment of the optical path of the projection optical system, etc. To the substrate. It is worth mentioning that without considering the possible changes in the substrate, the exposure is based on the original exposure parameters. It should be possible to get the target exposure pattern, but in fact, it is possible The exposure pattern deviates from a desired position on the substrate due to the change of the substrate. Therefore, the present invention is According to a preset deformation amount of one of the substrates, a correction value corresponding to one of the 1237163 13676twfl.doc / 006 correction date 94.5.11 (step 204) is obtained, and the auxiliary type deformation in the basin is corrected ^ / ,, ^ positive values Various instructions for the substrate can be given). In —, example field J / type, please refer to the following steps to receive the same external factors; response: the amount of deformation of the production sample plate is called the measurement sample base step 302), and the sample substrate ― :, plate is selected -Origin (step in which the Et earth measurement point is made by the origin disk (step 304), and the measurement material *, for example, can be located at any position on the substrate. Socket = 306). Then, the relative deformation amount before deformation (step 308). Of course, one of the many empirical data on the η substrate 'is, for example, the previous optical-mechanical = exposure correction value to adjust the original displacement correction, proportional correction, and rotation correction to perform the ―pre-compensation action so that = Position. In simple terms, the displacement correction system adjusts the χ and γ settings of one of the two jr displacement parameters, and the proportional correction system adjusts the exposure machine. -The setting value of the proportional parameter is adjusted by adjusting the rotation parameter of one of the exposure machines. After switching to the compensation system, the substrate is exposed through the adjusted exposure parameters to form a corrected exposure pattern on the substrate (step 208). Among them, 丄 237163 modified date 94.5.11 13676twfl.doc / 〇〇6 -ί: the light pattern has a higher exposure than the target exposure pattern than the target exposure pattern_and: = can make the corrected exposure pattern correct Enlarge or reduce the light received after the correction, and rotate the first pattern with m to make up one mu of Gengzheng compared with the target exposure pattern. Therefore, the displacement of the substrate is changed to compensate for the substrate: === The degree of compensation is also the same as the deformation of the situation. In this way, after the above-mentioned pre-correction, the exposure pattern 2 will be close to the desired purpose after the substrate is deformed. An example formed by this method and subsequent processes is "spleen 乂 = layer n. The main components such as the electrode, pixel element, and layer are still in the correct position after the substrate is deformed, which helps to improve the yield of the film transistor array substrate and the color filter substrate when it is assembled, avoiding panel light leakage and contrast. Or crosstalk. It is worthwhile / thinking that the above embodiment only shows the exposure process of one mask of a thin film transistor array substrate. However, in fact, the exposure method of the present invention is applicable to a thin film transistor array substrate. In any photomask manufacturing process or photomask manufacturing process, the effect of improving the accuracy of the exposure pattern can also be achieved. In addition, in other embodiments of the present invention, the present invention can be performed after each photomask is manufactured. Measure the amount of deformation of the substrate, and then modify the exposure parameters of the next mask process based on the measured amount of deformation to provide a better correction effect 1237163 13676twfl .doc / 006 Correction date 94.5.11 Although The described embodiments use the thin film transistor array substrate as a preferred example to explain the exposure method of the present invention. However, in other embodiments, the exposure method of the invention can also be applied to, for example, a pure filter substrate or other element exposure. Process.
▲综上所述，本發明之曝光方法係依據基板可能產生之 變形量來提供-對應之補正值，以藉由位移補正、比例補 正以及旋轉補正等方式預先對曝光圖案進行補償，以使得 基板因溫度變化或其他外界因素而產生變形時，基板上之 曝光圖案可逼近所欲形成之目標曝光圖案。藉由本發明之 曝光方法可對基板之變形提供良好的線性或非線性補正， 以進行良好精度之曝光處理，因而可提供較佳之製程良率。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限疋本杳明，任何熟習此技藝者，在不脫離本發明之精神 =範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】▲ In summary, the exposure method of the present invention provides a corresponding correction value according to the amount of deformation that the substrate may produce, and compensates the exposure pattern in advance by means of displacement correction, proportional correction, and rotation correction to make the substrate When deformation occurs due to temperature changes or other external factors, the exposure pattern on the substrate can approach the desired exposure pattern to be formed. The exposure method of the present invention can provide a good linear or non-linear correction for the deformation of the substrate to perform a good-precision exposure process, and thus can provide a better process yield. Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention. Any person skilled in this art can make some changes and decorations without departing from the spirit of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the attached patent application. [Schematic description]
圖1A〜1C繪示為習知之多種薄膜電晶體陣列基板的 變形示意圖。 圖2繪示為本發明之較佳實施例之曝光方法的流程 圖。 圖3綠示為本發明之一種量測樣本基板之變形量的流 程圖。 12 I2371^676twfd〇c 【主要元件符號說明】 1〇〇 :薄膜電晶體陣列基板 102 :組立原點 110 :主動區域 步驟202 :在一曝光機台内載入一原始之曝光參數 步驟204 :依據基板之一預設變形量來求得對應之一 補正值1A to 1C are schematic diagrams showing deformations of a variety of conventional thin film transistor array substrates. FIG. 2 is a flowchart of an exposure method according to a preferred embodiment of the present invention. FIG. 3 is a flowchart of measuring the deformation amount of the sample substrate according to the present invention. 12 I2371 ^ 676twfd〇c [Description of main component symbols] 100: Thin-film transistor array substrate 102: Assembly origin 110: Active area step 202: Load an original exposure parameter in an exposure machine Step 204: Basis A preset amount of deformation of the substrate to obtain a corresponding correction value
步驟206 :依據補正值來調整曝光機台之曝光參數 步驟208 :藉由調整後之曝光參數來對基板進行曝 光，以在基板上形成一補正後之曝光圖案 步驟302 ·選定樣本基板上之一原點 步驟304 :選定樣本基板上之一量測點 步驟306 :量測原點與量測點之一變形前之相對座木 值以及一變形後之相對座標值 驟3〇8 ·將變形前之相對座標值與變形後之相對力 軚值相比對，以獲得樣本基板之變形量 - 13 1237163 修IE臼期94.5.11 13676twfl.doc/006 五、中文發明摘要： 種曝光方法，其適用於一曝光機台，以期在一基板 ^形成:目標曝光圖案，其中基板會受一外界因素影響而 變形。首先，決定基板之一預設變形量，以提供對應之一 補正值。接著，依據補正值來調整曝光機台之曝光參數。 之後，藉由調整後之曝光參數來對基板進行曝光，以在基 板上形成一補正後之曝光圖案，其中補正後之曝光圖案會 在基板變形之後逼近目標曝光圖案。此曝光方法可對基板 之變形提供良好的線性或非線性補正，以提供較佳之製程 良率。 六、英文發明摘要：Step 206: Adjust the exposure parameters of the exposure machine according to the correction value. Step 208: Expose the substrate by adjusting the exposure parameters to form a corrected exposure pattern on the substrate. Step 302. Select one of the sample substrates. Origin step 304: Select a measurement point on the sample substrate. Step 306: Measure the relative coordinates of the origin and one of the measurement points before deformation and the relative coordinate value after deformation. Step 308: Before deformation The relative coordinate value is compared with the relative force value after deformation to obtain the amount of deformation of the sample substrate-13 1237163 IE repair period 94.5.11 13676twfl.doc / 006 V. Abstract of Chinese Invention: An exposure method, which is applicable In an exposure machine, it is expected to form a target exposure pattern on a substrate, wherein the substrate will be deformed by an external factor. First, a predetermined amount of deformation of the substrate is determined to provide a corresponding one of the correction values. Then, adjust the exposure parameters of the exposure machine according to the correction value. Thereafter, the substrate is exposed through the adjusted exposure parameters to form a corrected exposure pattern on the substrate, wherein the corrected exposure pattern will approach the target exposure pattern after the substrate is deformed. This exposure method can provide good linear or non-linear correction for the deformation of the substrate to provide better process yield. Abstract of English Invention:
An exposure method, used in an exposure apparatus, is provided to form an expectative exposure pattern on a substrate，which may be deformed by an external factor· First， a deformation of the substrate is predetermined in order to provide a calibration value. Exposure parameters of the exposure apparatus are adjusted according to the calibration value. Then，an exposing process is performed using the adjusted exposure parameters to form a calibration exposure pattern on the substrate. And the calibration exposure pattern can approximate to the expectative exposure pattern after the substrate being deformed. The exposure method provides a good linear or nonlinear calibration against the deformation of the substrate and improves the yield of the process.An exposure method, used in an exposure apparatus, is provided to form an expectative exposure pattern on a substrate, which may be deformed by an external factor · First, a deformation of the substrate is predetermined in order to provide a calibration value. Exposure parameters of the exposure apparatus are adjusted according to the calibration value. Then, an exposing process is performed using the adjusted exposure parameters to form a calibration exposure pattern on the substrate. And the calibration exposure pattern can approximate to the expectative exposure pattern after the substrate being deformed. The exposure method provides a good linear or nonlinear calibration against the deformation of the substrate and improves the yield of the process.