TWI236324B - Insulating structure of circuit board and method for fabricating the circuit board by using the insulating structure - Google Patents
Insulating structure of circuit board and method for fabricating the circuit board by using the insulating structure Download PDFInfo
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- TWI236324B TWI236324B TW93109692A TW93109692A TWI236324B TW I236324 B TWI236324 B TW I236324B TW 93109692 A TW93109692 A TW 93109692A TW 93109692 A TW93109692 A TW 93109692A TW I236324 B TWI236324 B TW I236324B
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Description
1236324 五、發明說明(1) ' '------- 【發明所屬之技術領域] 本發明係有關於一種絕緣 電路板絕緣層結構及利用^邑::構及其應用,尤心一種 r 土 a社十Ί 」用°亥纟巴緣層形成電路板之製法。1236324 V. Description of the invention (1) '' ------- [Technical field to which the invention belongs] The present invention relates to the structure and use of an insulating layer of an insulating circuit board. r 土 a 社 十 Ί "The method of forming a circuit board by using a rim layer.
L先刖技術J 在全球電子產業追求_舊 夕4二匕几々八尸妒妓短小、高速化、高頻化 '及 夕功旎化之發展赵勢下,高宓 回$度之電子構裝及印刷電路板 技術成為必然趨勢。為滿足半L 先 刖 技术 J Pursue in the global electronics industry Mounting and printed circuit board technology has become an inevitable trend. To meet half
Integration)以及微型化(Μ· ·、衣冋貝市又 4、 坦w夕私+、士么 k Mlniaturizat ion)的封裝需 求,提供多數主被動元件及蜱 u 」、士、r〜丄放q 干及、、泉路載接之電路板(C i rcu i t b〇a r d )亦逐漸由雙層板淨_点夕 '、艾成夕層板(Multi-layerboard ),俾於有限的空間下,茲士 a ^ 藉由層間連接技術(I n t e Γ 1 a y e r connect ion) 擴大電路也 ^ 岭板上可利用的電路面積,俾配合高 電子密度之積體電路(Integrated circuit)需求。 以電路板製程為例,多層電路板之製造方法大致係藉 由壓合法(Laminating press)及增層法(BuUd-up)兩 種方式。 如第1 A至第1 C圖所示,係顯示習知利用壓合方式製造 夕層電路板之製程示意圖’如美國專利第4,526 8] 5於素 及第5,806^77號·案即為應用此方法。 案- 首先,預備一例如由銅落與絕緣基材所製成之複數個 笔路板卓元11,12,13’該電路板單元11係形成有上下線路 層1 1 a,1 1 b以及導電通孔1 1 c,而該等電路板單元丄2,丨3則 分別於一側形成有線路層1 2 a,1 3 a,且該等電路板單元i 2 1 3相對於線路層1 2 a,1 3 a之另一側亦分別形成有導電金屬Integration) and miniaturization (Μ ··, Ishibei City, 4, Tan Wish Private +, Shi Mlniaturizat ion) packaging requirements, providing most active and passive components and ticks. The circuit board (C i rcu itb〇ard) connected by dry and spring roads has also gradually been cleaned by double-layer boards, Dian Xi ', Multi-layerboard, and in a limited space, hereby Aa ^ By interlayer connection technology (Inte Γ 1 ayer connect ion) to expand the circuit ^ circuit board available circuit area, to meet the high electron density integrated circuit (Integrated circuit) requirements. Taking the circuit board manufacturing process as an example, the manufacturing method of a multilayer circuit board is roughly two methods: laminating press and BuUd-up. As shown in Figures 1A to 1C, it is a schematic diagram showing a conventional process for manufacturing a multilayer circuit board by a press bonding method, such as U.S. Patent No. 4,526 8] 5 Yu Su and No. 5,806 ^ 77. To apply this method. -First, prepare a plurality of pen boards 11, 12, 13 'made of copper and insulating substrates, for example. The circuit board unit 11 is formed with upper and lower wiring layers 1 1 a, 1 1 b, and The conductive vias 1 1 c, and the circuit board units 丄 2, 丨 3 are respectively formed with circuit layers 1 2 a, 1 3 a on one side, and the circuit board units i 2 1 3 are opposite to the circuit layer 1 2 a, 1 3 a are also formed with conductive metal on the other side
17663全®. ptd 第5頁 1236324 五、發明說明(2) 層 1 2 c,1 3 c。 如第1 A圖所示,於該等電路板單元1 1,1 2,1 3間係分別 夾設一由纖維或熱固性樹脂等(諸如環氧樹脂、酚聚酯等 )所製成之絕緣層14作為黏著層(Adhesive layer),以 供該等電路板單元1 1,1 2,1 3彼此疊合黏著。此處以業界習 稱之樹脂聚合反應為例,自廠商取得之未進行聚合反應之 樹脂初始狀態通稱為A階段化(A-stage),當聚合反應開 始卻尚未到達烘烤固化(Cure)稱為B階段化(B-stage) 或未完全聚合階段,如第1 A圖所示,該未至烘烤固化 (C u r e)之絕緣層1 4係呈B階段化(B-stage)之未完全聚 合材料層。 如第1B圖所示,經過疊層(Laminating)及熱壓( Heat press)步驟將交相疊置之電路板單元11,12, 13壓合 成一多層接合板。此時,經熱壓後之絕緣層1 4已完全聚合 (Fully cured)之C階段化(C - s t a g e)狀態,且可運用 鑽孔技術(Dn 1 1 1 ng)鑽設複數個貫穿通孔1 5,並於該貫 穿通孔1 5孔壁表面上鍍覆一導電金屬層(如元件符號1 2 c, 1 3 c) 〇 . 如第1C圖所示,於最外層之導電金屬層12c,13c上進 行線路圖案化(P a 11 e r n i n g)製作線路層1 2 b,1 3 b,各電 路板單元1 1,1 2,1 3之間即可藉通孔1 5電性連接,而製得一 具有六層線路層之多層電路板10。 然而,由於壓合製程係於高溫下進行,而該絕緣層1 4 經烘烤固化於處理過程中將因該絕緣層1 4收縮而難以控制17663 All®. Ptd Page 5 1236324 V. Description of the Invention (2) Layers 1 2 c, 1 3 c. As shown in Figure 1A, an insulation made of fiber or thermosetting resin (such as epoxy resin, phenol polyester, etc.) is sandwiched between the circuit board units 1 1, 12, 2, and 13 respectively. The layer 14 serves as an adhesive layer for the circuit board units 11, 12, and 13 to be superposed and adhered to each other. Here, the resin polymerization reaction commonly used in the industry is taken as an example. The initial state of the resin that has not been polymerized from the manufacturer is commonly referred to as A-stage. When the polymerization reaction has started but has not yet reached curing, it is called Cure. B-stage or incomplete polymerization stage, as shown in Fig. 1A, the insulation layer 1 to 4 that has not been cured (Cure) is incomplete in B-stage Polymer material layer. As shown in FIG. 1B, the intersecting and overlapping circuit board units 11, 12, 13 are laminated to form a multilayer bonding board through the steps of laminating and heat pressing. At this time, the heat-pressed insulation layer 14 has been fully polymerized (C-stage), and a plurality of through-holes can be drilled using drilling technology (Dn 1 1 1 ng). 15 and plate a conductive metal layer (such as element symbols 1 2 c, 1 3 c) on the surface of the through-hole 15 hole wall 〇. As shown in FIG. 1C, the outermost conductive metal layer 12c On 13c, circuit patterning (P a 11 erning) is performed to make circuit layers 1 2 b, 1 3 b, and each circuit board unit 1 1, 1 2, 1 3 can be electrically connected through a through hole 15, and A multilayer circuit board 10 having six wiring layers is produced. However, since the pressing process is performed at a high temperature, and the insulating layer 14 is baked and cured during processing, it will be difficult to control because the insulating layer 14 shrinks.
17663 全懋.ptd 第6頁 1236324 五、發明說明(3) 電路板1 0之尺寸精確,不僅將於壓合過程中產生應力與翹 曲問題,更令後續製程無法順利進行,造成產品製作困難 0 同時,由於該絕緣層1 4之收縮,於後續製程(例如曝 光)中,内層線路將出現例如孔偏問題,而影響對位的準 度,且越外層之部分越難進行例如曝光之製程。此外,以 壓合方式所製造之多層電路板需要較厚之絕緣層,而令裝 置之整體厚度變厚,除了不利於追求輕薄短小之發展趨勢 之外,較厚且未經烘烤固化(Ν ο η - c u r e)之絕緣層1 4更將 導致後續製程中之收縮情況愈加嚴重。 如第2A至第2E圖所示者係以增層方式(Bui Id-up)製 作多層板的方法之製程示意圖,如美國專利第6,3 2 3,4 3 5 號案及第6,4 2 8,9 4 2號案即為應用此方法。 如第2 A圖所示,首先,製備一核心基板2 1,該核心基 板2 1係由一具預定厚度之樹脂芯層2 1 1及形成於該芯層2 1 1 表面上之銅箔圖案2 1 2所構成。同時,於該樹脂芯層2 1 1中 形成有複數個導電通孔2 1 3,藉此電性連結該樹脂芯層2 1 1 表面上之銅箔圖案2 1 2。如第2 B圖所示,將該核心基板2 L 實施增層製程,β於該核心基板2 1表面佈設一介電層2 2, 該介電層2 2上開設有複數個連通至該銅箔圖案2 1 2之盲孔 23 ° 如第2 C圖所示,於該介電層2 2外露表面(包含盲孔23 之孔壁)以無電解電鍍或濺鍍等方式形成一金屬導電膜24 ,並於該金屬導電膜2 4上形成一圖案化電鍍阻層25,俾使17663 Quan 懋 .ptd Page 6 1236324 V. Description of the invention (3) The precise dimensions of the circuit board 10 will not only cause problems of stress and warpage during the lamination process, but also make subsequent processes fail to run smoothly, making product production difficult. 0 At the same time, due to the shrinkage of the insulating layer 14, in subsequent processes (such as exposure), problems such as hole deviation will occur in the inner layer circuits, which will affect the alignment accuracy, and the more the outer layer, the more difficult it is to perform the process such as exposure . In addition, multi-layer circuit boards manufactured by compression bonding require thicker insulating layers, which makes the overall thickness of the device thicker. In addition to not being conducive to the pursuit of light, thin and short development trends, it is thicker and is not baked and cured (N ο η-cure) of the insulating layer 14 will cause the shrinkage in the subsequent process to become more serious. As shown in Figs. 2A to 2E, they are process schematic diagrams of a method for making a multilayer board by a Bui Id-up method, such as US Patent Nos. 6, 3 2 3, 4 3 5 and 6, 4 Case No. 28, 9 4 2 is the application of this method. As shown in FIG. 2A, first, a core substrate 21 is prepared. The core substrate 21 is composed of a resin core layer 2 1 1 having a predetermined thickness and a copper foil pattern formed on the surface of the core layer 2 1 1 2 1 2 constitutes. At the same time, a plurality of conductive vias 2 1 3 are formed in the resin core layer 2 1 1, thereby electrically connecting the copper foil patterns 2 1 2 on the surface of the resin core layer 2 1 1. As shown in FIG. 2B, the core substrate 2 L is subjected to a build-up process, β is provided with a dielectric layer 22 on the surface of the core substrate 21, and a plurality of copper layers are connected to the dielectric layer 22 to communicate with the copper. Blind hole 23 of foil pattern 2 1 2 As shown in FIG. 2C, a metal conductive film is formed on the exposed surface of the dielectric layer 2 (including the hole wall of the blind hole 23) by electroless plating or sputtering. 24, and a patterned plating resist layer 25 is formed on the metal conductive film 24, so that
17663 全懋.ptd 第7頁 1236324 五、發明說明(4) 該電鍍阻層2 5形成有多數之開口 2 5 0以外露出欲形成圖案 化線路層之部分導電膜。 如第2 D圖所示,利用電鍍方式於該電鍍阻層2 5之開口 2 5 0中形成有圖案化線路層2 6,並使該線路層2 6得以透過 盲孔2 3電性導接至該銅箔圖案2 1 2,然後蝕刻移除該電鍍 阻層2 5及其所覆蓋之部分導電膜2 4,俾以形成一增層結構 20a° 如第2 E圖所示,同樣地,於該第一增層結構2 0 a最外 層表面上亦得運用相同方法重複形成第二增層結構2 0 b, 以逐步增層·形成一多層電路板2 0。其中,在此增層製程中 所選擇介電層材料上,一般可分為纖維含浸樹脂材料以及 非纖維之樹脂型材料。 纖維含浸樹脂材料可為例如雙順丁烯二酸醯亞胺/三 ll陕(BT,Bismaleimide triazine)加玻璃纖維或混合 環氧樹脂與玻璃纖維(F R 4)等,而非纖維之樹脂型材料 可為例如日本味之素公司所製造之ABF(A jin〇mo to buildup film) , 其中 ,由於 ABF質軟, 需承載於薄膜 (Carrier 1 ay e r)上。 ^ 然而,非纖維之樹脂型材料則因可靠度無法像纖維含 浸樹脂材料來的高,而無法有效支承後續增層結構。而且 ,無論纖維含浸樹脂材料以及非纖維之樹脂型材料,在此 增層製程之結構於後續處理中仍具有由預固化或未固化材 料所構成之介電層所產生之收縮以及對位問題。故,不當 選擇之絕緣層或介電層材料/結構將因收縮以及對位問題17663 Quan.ptd Page 7 1236324 V. Description of the invention (4) The plating resist layer 25 is formed with a large number of openings 2 5 0 and a part of the conductive film where a patterned circuit layer is to be formed is exposed. As shown in FIG. 2D, a patterned circuit layer 2 6 is formed in the opening 2 5 0 of the plating resist layer 25 by electroplating, and the circuit layer 2 6 can be electrically connected through the blind hole 2 3 To the copper foil pattern 2 1 2, and then etching to remove the plating resist layer 2 5 and a part of the conductive film 24 covered thereon, so as to form a layered structure 20a ° as shown in FIG. 2E. Similarly, On the outermost surface of the first build-up structure 20 a, a second build-up structure 20 b must be repeatedly formed using the same method to gradually build up a layer of a multilayer circuit board 20. Among them, the dielectric layer materials selected in this layer-adding process are generally classified into fiber-impregnated resin materials and non-fiber resin-type materials. The fiber-impregnated resin material may be, for example, bismaleimide / triamine (BT, Bisaleimide triazine) plus glass fiber or mixed epoxy resin and glass fiber (FR 4), etc., instead of a resin type material of fiber It can be, for example, ABF (Ajinmo to buildup film) manufactured by Ajinomoto Co., Ltd., in which the ABF is soft and needs to be carried on a film (Carrier 1 ayer). ^ However, non-fiber resin-based materials cannot support the subsequent build-up structure because they cannot be as reliable as fiber-impregnated resin materials. Moreover, regardless of the fiber-impregnated resin material and the non-fiber resin-based material, the structure of the layer-adding process in the subsequent processing still has the problem of shrinkage and alignment caused by the dielectric layer composed of pre-cured or uncured material. Therefore, improperly selected insulation or dielectric material / structure will cause shrinkage and alignment problems
17663全懋.ptd 第8頁 1236324 五、發明說明(5) 而整體變為廢 因此,鑒· 緣層或介電層 題,以解決製 )均下降等問 【發明内容】 鑒於以上 品,其損失極為 於上述之問題, 之材料/結構所 程良率過低、產 題者,實已成目 所述習 提供一種可將收縮率 該絕緣層形成電路板 本發明之另一目 板絕緣層結構 為達成上 構及利用 層結 主要 聚合 材料 已完 該已 始接 化或 全聚 線路 包括 材料 層係 當欲 全聚 完全 合。 粗半造 合材 於製 層之 一已 層表 較薄 形成 合材 聚合 其中 化製 料層 造多 電路 及利用 揭及其 該絕緣 完全聚 面之未 於該已 該絕緣 料層夾 材料層 ,可選 程,以 間之接 層電路 板單元 知技術之 減至最小 之製法。 的係提供 該絕緣層 他目的, 層形成電 合材料層 完全聚合 完全聚合 層結構時 置於該等 以及該等 擇將該已 加強該已 合力。 板時,係 ;於該等 嚴重。 如何避免習知技術中諸如絕 造成之收縮風險以及對位問 能與曝光寬容度(Latitude 前亟待探討之課題。 缺點,本發明之主要目的在 之電路板絕緣層結構及利用 一種可保持對位準度之電路 形成電 本發明 路板之 以及二 材料層 材料層 ,可將 未完全 未完全 完全聚 完全聚 路板之 揭露一 製法, 分別形 ,且該 者為較 該例如 聚合材 聚合材 合材料 合材料 製法。 種電路 該絕緣 成於該 等未完 佳。 呈捲繞 料層之 料層之 層表面 層與該 板絕緣 層結構 已完全 全聚合 型式之 間,由 一端開 進行活 等未完 包括:提供複數個具圖案化 電路板單元之間形成一前述17663 全懋 .ptd Page 8 1236324 V. Description of the invention (5) The whole becomes obsolete. Therefore, the problem of the edge layer or the dielectric layer to solve the problem is reduced. [Content of the invention] In view of the above products, The loss is very much the problem mentioned above. The material / structure has a low yield rate, and those who have produced the problem have already realized what they have learned. Provide a structure that can reduce the shrinkage rate of the insulating layer to form a circuit board. In order to achieve the structure and use of the main polymer materials have been completed, the connected or fully polymerized circuit, including the material layer, should be fully polymerized. Coarse and semi-constructed materials are laminated on one of the layers to form a thinner layer. Polymerized materials are used to create multiple circuits and use the exposed and fully insulated surfaces of the materials to sandwich the material layer. The optional process is a method of minimizing the known technology of the circuit board unit in between. The system provides the insulating layer for other purposes, the layer forms the layer of the electrically-conductive material, fully polymerized, fully polymerized, the layer structure is placed on these, and the option will strengthen the combined force. The board is tied to such serious. How to avoid the shrinkage risks caused by conventional techniques, such as the shrinkage risk caused by alignment, and the alignment tolerance and exposure latitude (a problem to be explored before Latitude. Disadvantages, the main purpose of the present invention is the structure of the circuit board insulation layer and the use of a method to maintain alignment The accurate circuit forms the circuit board of the present invention and the two material layers. The material layer can form a method of exposing incompletely incompletely aggregated road boards, respectively, and the latter is more suitable than the polymer materials such as polymer materials. Material and material manufacturing method. Insulation of the circuit is formed in these incomplete. The surface layer of the layer of the winding material layer and the structure of the insulation layer of the board have been completely polymerized, and the end is opened to perform activities such as unfinished. : Providing a patterned circuit board unit
17663 全懋.ptd 第9頁 1236324 五、發明說明(6) 之絕緣層結構作為絕緣層;經過疊層及熱壓步驟將交相疊 置之電路板單元壓合成一多層接合板;以及鑽設複數個貫 穿通孔,並於該等貫穿通孔孔壁表面上鍍覆一導電金屬層 ,以於最外層之導電金屬層上進行線路圖案化等步驟,而 各電路板之間即藉由該等貫穿通孔電性連接,以便製得一 多層電路板。 所得之多層電路板係包括有複數個電路板單元,各該 電路板單元間係間隔有如前述之絕緣層結構,該絕緣層結 構係以其未完全聚合材料層填補各該電路板單元之線路層 間隙,且該已完全聚合材料層與各該電路板單元間係以該 等未完全聚合材料層間隔開。而其他實施例中,該多層電 路板亦可選擇包括有一核心基板,該核心基板為一完成前 處理之雙層或多層電路板,以於該核心基板表面逐步增層 形成一多層電路板,且該核心基板中係形成有如前述之絕 緣層結構,其中該絕緣層結構係以其未完全聚合材料層填 補各增層結構間之線路層間隙,且該已完全聚合材料層與 該核心基板上之增層結構係以該等未完全聚合材料層間隔 開。其中,該核心基板亦可為應用前述之絕緣層結構所製β 成者。 - 本發明之電路板絕緣層結構係可應用於諸如單層、雙 層、或多層電路板以及核心基板製造上,且係可選擇藉由 壓合法、增層法及其他適當方式應用於電路板之製造上者 ,以將後續製程中該絕緣層結構之收縮率減至最小,並可 保持後續製程之對位準度。17663 Quan 懋 .ptd Page 9 1236324 V. Description of the invention (6) The insulating layer structure is used as the insulating layer; the laminated circuit board units are laminated into a multi-layer bonded board through lamination and hot pressing steps; A plurality of through-holes are set, and a conductive metal layer is plated on the surfaces of the walls of the through-holes to perform steps such as circuit patterning on the outermost conductive metal layer. The through-holes are electrically connected to obtain a multilayer circuit board. The obtained multilayer circuit board includes a plurality of circuit board units, and each of the circuit board units is separated by the aforementioned insulation layer structure. The insulation layer structure is to fill the circuit layer of each circuit board unit with its incomplete polymer material layer. Gaps, and the fully polymerized material layer and each circuit board unit are separated by the incompletely polymerized material layers. In other embodiments, the multilayer circuit board may optionally include a core substrate. The core substrate is a pre-processed double-layer or multi-layer circuit board, so that a layer of a multi-layer circuit board is gradually formed on the surface of the core substrate. And the core substrate is formed with the aforementioned insulation layer structure, wherein the insulation layer structure fills the circuit layer gap between the layered structures with its incompletely polymerized material layer, and the completely polymerized material layer and the core substrate The build-up structure is separated by these layers of incomplete polymer material. Wherein, the core substrate can also be made by applying the aforementioned insulating layer structure. -The circuit board insulation layer structure of the present invention can be applied to the manufacture of single-layer, double-layer, or multi-layer circuit boards and core substrates, and can be optionally applied to circuit boards by pressing, layering, and other appropriate methods. The former is manufactured to minimize the shrinkage of the insulating layer structure in the subsequent processes, and to maintain the alignment of the subsequent processes.
17663 全懋.ptd 第10頁 1236324 五、發明說明(7) 如此一來,便可由本發明之電路板絕緣層結構及利用 該絕緣層形成電路板之製法有效避免習知技術之絕緣層或 介電層材料/結構因收縮以及對位問題所造成之種種缺失 ,更可藉此提高製程良率、產能與曝光寬容度。 以下係藉由特定的具體實施例說明本發明之實施方式 ,熟習此技藝之人士可由本說明書所揭示之内容輕易地瞭 解本發明之其他優點與功效。本發明亦可藉由其他不同的 具體實施例加以施行或應用,本說明書中的各項細節亦可 基於不同觀點與應用,在不悖離本發明之精神下進行各種 修飾與變更。 【實施方式】 以下之實施例係進一步詳細說明本發明之觀點,但並 非以任何觀點限制本發明之範轉。 第3至第5 C圖係根據本發明之較佳實施例所繪製之圖 式。如圖所示,本發明之絕緣層結構3係應用於電路板之 製造上,主要包括一已完全聚合材料層3 1以及二分別形成 於該已完全聚合材料層3 1上下表面之未完全聚合材料層 33, 35。 . 此處須注意的一點是,該絕緣層結構3係可應用於諸 如單層、雙層及多層電路板之製造上,且係可選擇藉由壓 合法、增層法及其他適當方式應用於電路板之製造上者, 本實施例中僅示例性說明其中一實施方式,但非以此限定 本發明,合先敘明。 如第3及第4圖所示,該已完全聚合材料層3 1係由已完17663 Quan 懋 .ptd Page 10 1236324 V. Explanation of the invention (7) In this way, the circuit board insulation layer structure of the present invention and the method for forming the circuit board by using the insulation layer can effectively avoid the insulation layer or the dielectric of the conventional technology The lack of electrical layer materials / structures due to shrinkage and alignment problems can further improve process yield, productivity and exposure latitude. The following is a description of specific embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied by other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the spirit of the present invention. [Embodiments] The following examples are intended to further illustrate the viewpoints of the present invention in detail, but do not limit the scope of the present invention in any way. Figures 3 to 5C are drawings according to a preferred embodiment of the present invention. As shown in the figure, the insulation layer structure 3 of the present invention is applied to the manufacture of circuit boards, and mainly includes a fully polymerized material layer 31 and two incompletely polymerized layers formed on the upper and lower surfaces of the fully polymerized material layer 31 respectively. Material layers 33, 35. It should be noted here that the insulation layer structure 3 can be applied to the manufacture of single-layer, double-layer and multi-layer circuit boards, and can be applied by pressing, layer-adding method and other appropriate methods. For the manufacture of the circuit board, this embodiment only exemplifies one of the implementation manners, but the present invention is not limited thereto, and will be described together. As shown in Figures 3 and 4, the fully polymerized material layer 31 is finished.
17663 全懋.ptd 第1.1頁 1236324 五、發明說明(8) 全聚合之材料所構成,且可為例如環氧樹脂(Ep〇xy reSin )、酚聚酯、聚乙醯胺(P〇lyiinide)、氰脂(cyanate ester)、玻璃纖維、雙順丁烯二酸醯亞胺/三氮陕(βτ, B i s ma 1 e i m i de t r i a z i ne)或混合環氧樹脂與玻璃纖維等 材質所構成之有機材料。其中,該已完全聚合材料層3 1亦 可選擇經纖維強化(F i b e r - r e i n f 〇 r c e d)或經顆粒強化( Particle-reinforced )之複合材料所構成,以提高強度。 此外,該已完全聚合材料層3 1可選擇在表面藉由電漿 (Plasma)、反應離子姓刻(Reactive ionic etching, RIE)、離子金屬電漿(l〇n metal plasma,IMP)製程等 方式進行活化(A c t i v a t e)或粗糙化製程,而使該已完全 聚合材料層3 1表面例如產生化學鍵(C h e m i c a 1 b ο n d)或 呈現粗糙結構,俾得加強該已完全聚合材料層3 1與該等未 完全聚合材料層3 3,3 5間之接合力。 該等未完全聚合材料層3 3,3 5係由未完全聚合之材料 所構成,例如,為半固化膠態者。該等未完全聚合材料層 3 3,3 5亦可為例如環氧樹脂(Epoxy resin)、酚聚酯、聚 乙醯胺(Polyimide)、氰脂(Cyanate ester)、玻璃纖 維、雙順丁烯二酸醯亞胺/三氮阱(BT, Bismaleimide t r i a z i n e)或混合環氧樹脂與玻璃纖維等材質所構成之有 機材料。惟,應注意的是,該等未完全聚合材料層3 3,3 5 與該已完全聚合材料層3 1之構成材料並非限定為相同者; 換言之,該等未完全聚合材料層3 3,3 5與該已完全聚合材 料層3 1可選擇為相同或不同之材料。其中’該等未完全聚17663 Quan 懋 .ptd Page 1.1 1236324 V. Description of the invention (8) Fully polymerized materials, and can be, for example, epoxy resin (Epoxy resin), phenol polyester, polyethylamine (Polyinide) , Cyanate ester, glass fiber, bismaleimide / imide / triazine (βτ, B is ma 1 eimi de triazi ne) or mixed epoxy resin and glass fiber material. Among them, the fully polymerized material layer 31 can also be made of fiber-reinforced (F i ber-r e n f oc r d) or particle-reinforced composite materials to increase strength. In addition, the fully polymerized material layer 31 can be selected on the surface by plasma plasma, reactive ion etching (RIE), ion metal plasma (IMP) processes, etc. An activation or roughening process is performed to make the surface of the fully polymerized material layer 3 1 produce a chemical bond (C hemica 1 b ο nd) or present a rough structure, so as to strengthen the fully polymerized material layer 3 1 and The bonding force between these 3, 3, 5 layers of incompletely polymerized material. The incompletely polymerized material layers 3 3, 3 5 are composed of incompletely polymerized materials, for example, those in a semi-cured colloidal state. The incompletely polymerized material layers 3 3, 3 5 may also be, for example, epoxy resin, phenol polyester, polyimide, cyanate ester, glass fiber, and dicis-butene. Bismaleimide triazine (BT) or organic material composed of epoxy resin and glass fiber. However, it should be noted that the constituent materials of the incompletely polymerized material layers 3 3, 3 5 and the fully polymerized material layer 31 are not limited to the same; in other words, the incompletely polymerized material layers 3 3, 3 5 and the fully polymerized material layer 3 1 may be selected from the same or different materials. Of which these are not fully assembled
17663 全懋.ptd 第12頁 1236324 五、發明說明(9) 合材料層3 3,3 5係較薄於該已完全聚合材料層3卜 如第3圖所示,當欲形成該絕緣層結構3時,可將該例 如呈捲繞型式之已完全聚合材料層3 1夾置於該等未完全聚 合材料層3 3,3 5之間,由該已完全聚合材料層3 1以及該等 未完全聚合材料層3 3,3 5之一端開始接合,即得到如第4圖 所示之絕緣層結構3。大體而言,該絕緣層結構3係可選擇 例如呈捲繞狀態者,使用時僅需如撕開膠帶之方式即可取 用。其中,該絕緣層結構3之接合方式及使用方式並非侷 限於本實施例中所述者,而可有其他變化與修改。 由於本實施例中係將該絕緣層結構3應用於例如以壓 合法完成電路板之製造者,故係先將該絕緣層結構3成型 。然而,須注意的是,在其他實施例中,該絕緣層結構3 亦可應用例如增層或其他適用於形成電路板單元或核心基 板之製程上,而非以此為限。 同時,如第3圖所示,該絕緣層結構3復可選擇形成有 一上層薄膜3 7及/或一下層薄膜3 9於其最外層。舉例來說 ,該上層薄膜3 7可選擇形成於該未完全聚合材料層3 3之上 表面,而該下層薄膜3 9可選擇形成於該未完全聚合材料層/ 3 5之下表面,且該上層薄膜3 7及/或該下層薄膜3 9可分別 為金屬層、保護層、或承載層(Carrier layer)之其中 一者。 當該上層薄膜3 7及/或該下層薄膜3 9為金屬層時,其 可為例如銅箔。當該上層薄膜3 7及/或該下層薄膜3 9為該 保護層時,係作為隔絕之用,以於捲繞該絕緣層結構3時17663 Quan 懋 .ptd Page 12 1236324 V. Description of the invention (9) The material layer 3 3, 3 5 is thinner than the fully polymerized material layer 3 As shown in Figure 3, when the structure of the insulating layer is to be formed At 3 o'clock, the fully polymerized material layer 31 can be sandwiched between the incompletely polymerized material layers 3 3 and 35, for example. One end of the fully polymerized material layers 3 3 and 3 5 starts to be bonded, and an insulation layer structure 3 as shown in FIG. 4 is obtained. Generally speaking, the insulation layer structure 3 can be selected, for example, in a rolled state, and it can be used only by tearing off the tape during use. Wherein, the bonding method and the use method of the insulating layer structure 3 are not limited to those described in this embodiment, but may have other changes and modifications. Since the insulating layer structure 3 is applied to a manufacturer who completes a circuit board by pressing, for example, the insulating layer structure 3 is formed first. However, it should be noted that, in other embodiments, the insulating layer structure 3 can also be applied to, for example, layering or other processes suitable for forming a circuit board unit or a core substrate, but not limited thereto. Meanwhile, as shown in FIG. 3, the insulating layer structure 3 may optionally be formed with an upper film 37 and / or a lower film 39 at its outermost layer. For example, the upper film 37 may be formed on the upper surface of the incomplete polymer material layer 33, and the lower film 39 may be formed on the lower surface of the incomplete polymer material layer 35, and The upper film 37 and / or the lower film 3 9 may be one of a metal layer, a protective layer, or a carrier layer, respectively. When the upper-layer film 37 and / or the lower-layer film 39 are metal layers, they may be, for example, copper foil. When the upper-layer film 37 and / or the lower-layer film 39 are used as the protective layer, they are used as insulation for winding the insulating layer structure 3.
17663 全懋.ptd 第13頁 1236324 五、發明說明(10) 不致黏著其他具黏性之膜層。當該上層薄膜3 7及/或該下 層薄膜3 9為承載層時,則可為例如可撕除之有機薄膜,諸 如聚丙稀(Polypropylene, PP)薄膜或聚脂(Polyethylene terephthalate( polyester) , PET)薄膜。 於本實施例中,該上層薄膜3 7係選擇以金屬層或承載 層為例作說明者,該下層薄膜3 9係選擇以保護層為例作說 明者,但並非以此為限,例如,該上層薄膜3 7係可選擇為 保護層或其他需要之適當膜層,而該下層薄膜3 9則可選擇 為金屬層、承載層、或其他需要之適當膜層。 第5 A至第5 C圖將詳細說明本發明中絕緣層結構3較佳 實施例之之應用。此處須注意的一點是,該些圖式均為簡 化之示意圖,其僅以示意方式說明本發明之基本架構,因 此其僅顯示與本發明有關之構成,且所顯示之電路板單元 及其他構成並非以實際實施時之形狀、及尺寸比例繪製, 其實際實施時之形狀及尺寸比例為一種選擇性之設計,且 其構成佈局形態可能更為複雜。 請參閱第5 A圖,首先提供三個例如由銅箔與絕緣基材 所製成之電路板單元5,6,7,該等電路板單元5,6,7上分另 形成有線路層51 Γ 61,63, 71以及導電金屬層5 3, 7 3,並於各 該電路板早元5,6以及各該電路板早元6,7之間分別爽設該 絕緣層結構3作為黏著層(A d h e s i v e 1 a y e r),以供該等 電路板單元5,6,7彼此疊合黏著並作為絕緣之用。 於本實施例中,該等電路板單元5,6,7選擇以構成多 層(六層)電路板為例作說明者,但並非以此為限,例如17663 Quan 懋 .ptd Page 13 1236324 V. Description of the invention (10) Do not stick to other adhesive films. When the upper film 37 and / or the lower film 39 is a carrier layer, it can be, for example, a peelable organic film, such as a polypropylene (PP) film or a polyethylene terephthalate (polyester), PET. )film. In this embodiment, the upper film 37 is selected by using a metal layer or a carrier layer as an example, and the lower film 37 is selected by using a protective layer as an example, but is not limited thereto. For example, The upper film 37 can be selected as a protective layer or other appropriate film layer, and the lower film 39 can be selected as a metal layer, a supporting layer, or other appropriate film layer. 5A to 5C will illustrate the application of the preferred embodiment of the insulating layer structure 3 in the present invention in detail. It should be noted here that these drawings are simplified schematic diagrams, which only illustrate the basic structure of the present invention in a schematic manner, so they only show the components related to the present invention, and the circuit board units and other displayed The structure is not drawn according to the shape and size ratio during actual implementation. The shape and size ratio during actual implementation is an optional design, and its composition layout may be more complicated. Please refer to FIG. 5A. First, three circuit board units 5, 6, 7 made of, for example, copper foil and an insulating substrate are provided. A circuit layer 51 is formed on each of the circuit board units 5, 6, and 7. Γ 61, 63, 71 and conductive metal layers 5 3, 7 3, and the insulating layer structure 3 is arranged between each of the circuit board early elements 5, 6 and each of the circuit board early elements 6, 7 as an adhesive layer (A dhesive 1 ayer) for the circuit board units 5, 6, 7 to be superimposed on each other and used as insulation. In this embodiment, the circuit board units 5, 6, and 7 are selected as an example for constructing a multi-layer (six-layer) circuit board, but are not limited thereto. For example,
17663 全懋.ptd 第14頁 1236324 五、發明說明(11) 亦可選擇為單層或雙層之電路板、或者是一已完成前處理 之核心基板。其中,有關於該等電路板單元5,6,7/核心 基板之前處理製程乃業界所周知之技術,其非本案技術特 徵,故未再予贅述。 如第5B圖所示,經過疊層及熱壓步驟將交相疊置之電 路板單元5,6,7壓合成一多層接合板。此時,經熱壓後之 絕緣層結構3已完全聚合,而整體呈C階段化(C-stage) 狀態。其中,關於疊層及熱壓步驟之製程係屬習知技術, 故於此不再為文贅述。 由於該絕緣層結構3係包括夾置於該等未完全聚合材 料層3 3,3 5間之已完全聚合材料層3 1以及由未完全聚合材 料所構成之未完全聚合材料層3 3,3 5,且由該已完全聚合 材料層3 1之厚度遠厚於該等未完全聚合材料層3 3,3 5,於 熱壓步驟中,該已完全聚合材料層3 1不會收縮,而該等未 完全聚合材料層3 3,3 5由於厚度較薄,故所能產生之收縮 亦有限。因此,應用本發明之絕緣層結構無習知技術中因 收縮所造成之製程良率以及產能過低之風險。 同時,黏接於各該電路板單元5,6,7間之該等未完全. 聚合材料層3 3,3 5除了作為黏著層之外,亦可控制該等未 完全聚合材料層3 3,3 5之厚度,以由該等未完全聚合材料 層3 3,3 5填補各該電路板單元5,6,7之線路層5 1,6 1,7 1間 隙。如第5 B圖之虛線圓中所示,夾設於該電路板單元5及 該電路板單元6間之絕緣層結構3係以其未完全聚合材料層 3 3,3 5填補各該電路板單元5,6之線路層5 1,6 1間隙,且該17663 Quan.ptd Page 14 1236324 V. Description of the invention (11) It can also be a single-layer or double-layer circuit board, or a core substrate that has been pre-processed. Among them, the pre-processing process of these circuit board units 5, 6, 7 / core substrates is a well-known technology in the industry, and it is not a technical feature of this case, so it will not be repeated. As shown in Fig. 5B, the circuit board units 5, 6, and 7 which are alternately stacked are laminated into a multilayer bonded board through the lamination and hot pressing steps. At this time, the heat-pressed insulating layer structure 3 is completely polymerized, and the whole is in a C-stage state. Among them, the manufacturing process of the lamination and hot-pressing steps is a conventional technology, so it will not be described in detail here. Because the insulation layer structure 3 includes a fully polymerized material layer 3 1 sandwiched between the incompletely polymerized material layers 3 3, 3 5 and an incompletely polymerized material layer 3 3, 3 5, and the thickness of the fully polymerized material layer 31 is much thicker than the incompletely polymerized material layers 3 3, 35. In the hot pressing step, the fully polymerized material layer 31 does not shrink, and the Due to the thinner thickness of the incompletely polymerized material layers 3, 3, 5, the shrinkage that can be generated is also limited. Therefore, the application of the insulating layer structure of the present invention has no risk of too low process yield and shrinkage due to shrinkage. At the same time, these are not completely bonded to each of the circuit board units 5, 6, and 7. The polymer material layers 3 3, 3 5 can be used to control these incomplete polymer material layers 3 3, The thickness of 3 5 is to fill the gaps of the circuit layers 5 1, 6 1, 7 1 of the circuit board units 5, 6, 7 with the incompletely polymerized material layers 3 3, 3 5. As shown in the dashed circle in FIG. 5B, the insulation layer structure 3 sandwiched between the circuit board unit 5 and the circuit board unit 6 is filled with the incomplete polymer material layer 3 3, 3 5 The circuit layer 5 of the unit 5, 6 has a gap of 1, 6 1 and the
17663全懋.ptd 第15頁 1236324 五、發明說明(12) 已完全聚合材料層3 1與各該電路板單元5,6,7間係以該等 未完全聚合材料層3 3,3 5間隔開。 請參閱第5 C圖,運用鑽孔技術鑽設複數個貫穿通孔9 ,並於該等貫穿通孔9孔壁表面上鍍覆一導電金屬層(未圖 示),以於最外層之導電金屬層上進行線路圖案化,而各 該電路板單元5,6,7之間即藉由該等貫穿通孔9電性連接, 如此便製得一具有六層線路層之多層電路板3 0。 於本實施例中係以壓合方式說明本發明之絕緣層結構 3之於電路板製程上之應用,但應了的是,該絕緣層結構3 亦可應用於增層製程中。例如,可先製備一核心基板,該 丨· 核心基板為一完成前處理之雙層或多層電路板,於該核心 基板表面形成本發明之絕緣層結構3以作為介電層,經一 連串製程後逐步增層而形成一多層電路板。 換言之,本發明之絕緣層結構3之於電路板製程上之 應用並非以壓合方式為限,而可適用於增層製程或其他適 當製程中。此外,該絕緣層結構係以其未完全聚合材料層 填補各電路板單元/各增層結構間之線路層間隙,且該已 完全聚合材料層與各該電路板單元/該核心基板上之各電 路板單元/增層結構係以該等未完全聚合材料層間隔開。 於習知技術中,絕緣層或介電層通常係須為一較厚之 修 膜層,而令由預固化或未固化材料所構成之膜層造成裝置 之整體厚度變厚且導致收縮之問題。本發明中則可選擇形 成包括較薄未完全聚合材料層3 3,3 5以及已完全聚合材料 層3 1所構成之絕緣層結構3,故可將收縮率減至最小,俾17663 全懋 .ptd Page 15 1236324 V. Description of the invention (12) The fully polymerized material layer 3 1 and each of the circuit board units 5, 6, 7 are separated by the incompletely polymerized material layer 3 3, 3 5 open. Referring to FIG. 5C, a plurality of through-holes 9 are drilled by using a drilling technique, and a conductive metal layer (not shown) is plated on the surface of the through-holes 9 hole wall to conduct electricity in the outermost layer. Line patterning is performed on the metal layer, and each of the circuit board units 5, 6, and 7 is electrically connected through the through-holes 9, so that a multi-layer circuit board with six circuit layers 3 is produced. . In this embodiment, the application of the insulating layer structure 3 of the present invention to the process of manufacturing a circuit board is described in a press-fit manner, but it should be noted that the insulating layer structure 3 can also be applied to the build-up process. For example, a core substrate can be prepared first. The core substrate is a pre-processed double-layer or multilayer circuit board. The insulating layer structure 3 of the present invention is formed on the surface of the core substrate as a dielectric layer. After a series of processes, Layers are gradually added to form a multilayer circuit board. In other words, the application of the insulation layer structure 3 of the present invention to the circuit board manufacturing process is not limited to the lamination method, but can be applied to the build-up process or other appropriate processes. In addition, the insulation layer structure fills the circuit layer gaps between the circuit board units / layer structures with its incompletely polymerized material layer, and the fully polymerized material layer and each of the circuit board unit / core substrate The circuit board unit / additional structure is separated by these layers of incomplete polymer material. In the conventional technology, the insulating layer or the dielectric layer is usually a thicker film repair layer, and the film layer made of pre-cured or uncured material causes the overall thickness of the device to become thicker and causes shrinkage. . In the present invention, an insulating layer structure 3 including a thin layer of incompletely polymerized material 3, 3, 5 and a layer of completely polymerized material 3 1 can be formed, so that the shrinkage rate can be minimized, 俾
17663 全懋.ptd 第16頁 1236324 五、發明說明(13) 解決習知技術之缺失。 同時,由於該已完全聚合材料層3 1係為已完全聚合之 膜層而無收縮之虞,且由於該等未完全聚合材料層33,35 之厚度較薄而可將收縮率減至最小,該絕緣層結構3無習 知技術之收縮問題,因此,於後續製程(例如曝光)中無 内層線路出現例如孔偏之問題。故,應用本發明之絕緣層 結構可保持對位的準度,且無越外層之部分越難進行例如 曝光製程之問題。 此外,本發明之絕緣層結構可用以作為核心基板之絕 緣層部分,以令核心基板之厚度變薄且無收縮問題,而得 以縮小裝置之整體厚度。 因此,本發明主要係由已完全聚合材料層以及二分別 形成於該已完全聚合材料層上下表面之未完全聚合材料層 構成絕緣層結構,該絕緣層結構可應用於核心基板或電路 板增層製程中,俾可有效減少習知技術因收縮所造成之製 程問題,且無習知技術中之收縮風險以及對位問題,而可 提高製程良率、產能、以及曝光寬容度。 此外,本發明之絕緣層結構可用以作為絕緣層及介電-層,更可直接作為核心基板之用,不僅遠較習知技術中之 絕緣層及介電層提供更佳對位性及縮小收縮率之功效,更 具有較廣泛之使用性。 上述實施例僅為例示性說明本發明之原理及其功效, 而非用於限制本發明。任何熟習此技藝之人士均可在不違 背本發明之精神及範疇下,對上述實施例進行修飾與變化17663 Quan 懋 .ptd Page 16 1236324 V. Description of the Invention (13) Solving the shortcomings of conventional technology. At the same time, because the fully polymerized material layer 31 is a fully polymerized film layer without shrinking, and because the thickness of the incompletely polymerized material layers 33 and 35 is thin, the shrinkage rate can be minimized. The insulating layer structure 3 does not have the shrinkage problem of the conventional technology. Therefore, in the subsequent process (for example, exposure), there is no problem such as hole deviation in the inner layer circuit. Therefore, the accuracy of the alignment can be maintained by applying the insulating layer structure of the present invention, and there is no problem that it is more difficult to perform an exposure process such as an outer layer portion. In addition, the insulating layer structure of the present invention can be used as an insulating layer portion of a core substrate, so that the thickness of the core substrate can be reduced without a problem of shrinkage, thereby reducing the overall thickness of the device. Therefore, the present invention mainly consists of a fully polymerized material layer and two incompletely polymerized material layers formed on the upper and lower surfaces of the fully polymerized material layer, respectively, to form an insulating layer structure, and the insulating layer structure can be applied to a core substrate or a circuit board build-up layer. In the manufacturing process, 俾 can effectively reduce the process problems caused by shrinkage of the conventional technology, and there is no shrinkage risk and alignment problems in the conventional technology, which can improve the process yield, productivity, and exposure latitude. In addition, the insulating layer structure of the present invention can be used as an insulating layer and a dielectric-layer, and can also be directly used as a core substrate, which not only provides better alignment and shrinkage than the insulating layer and dielectric layer in the conventional technology. The effect of shrinkage rate is more widely used. The above-mentioned embodiments are merely illustrative for explaining the principle of the present invention and its effects, and are not intended to limit the present invention. Anyone skilled in the art can modify and change the above embodiments without departing from the spirit and scope of the present invention.
17663 全懋.ptd 第17頁 1236324 五、發明說明(14) 。因此,本發明之權利保護範圍,應如後述之申請專利 圍所歹U 。17663 Quan 懋 .ptd Page 17 1236324 V. Description of Invention (14). Therefore, the scope of protection of the rights of the present invention should be as described in the patent application scope described later.
17663 全懋.ptd 第18頁 123632417663 懋 .ptd page 18 1236324
圖式簡單說明 21 核心基板 22 介電層 23 盲孔 24 導電膜 25 電鍍阻層 31 已完全聚合材料層 33, 35 未完全聚合材料層 37 上層薄膜 39 下層薄膜 21 1 樹脂芯層 212 銅落圖案 213 導電通孔 250 開口 第20頁 17663 全懋.pt.dBrief description of the diagram 21 Core substrate 22 Dielectric layer 23 Blind hole 24 Conductive film 25 Plating resist layer 31 Completely polymerized material layer 33, 35 Incompletely polymerized material layer 37 Upper film 39 Lower film 21 1 Resin core layer 212 Copper drop pattern 213 Conductive through hole 250 Opening Page 20 17663 Full 懋 .pt.d
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TWI595811B (en) * | 2012-07-30 | 2017-08-11 | 三星電機股份有限公司 | Printed circuit board and method for manufacturing the same |
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