經濟部智慧財產局員工消費合作社印製 589927 A7 B7 五、發明説明（1) 【發明所屬的技術領域】 本發明是關於，對基板施加蝕刻等處理的感應耦合型 電漿處理裝置。 【先前技術】 在液晶顯示裝置（LCD)等的製造過程中，爲了在玻璃基 板施加規定的處理，需要使用電漿蝕刻裝置或電漿CVD成 膜裝置等各種電漿處理裝置。這種電漿處理裝置以往多使 用電容耦合處理裝置，但近年來，具有高度真空，及可以 獲得高密度電漿的優點的感應耦合電漿（Inductively Coupled Plasm a)處理裝置開始受到注意。 感應耦合電漿處理裝置是，在收容被處理基板的處理 .容器的介電體窗外側配置高頻天線，向處理容器內供應處 理用氣體，同時，向此高頻天線供應高頻電力，使其在處 理容器內產生感應耦合電漿，藉此感應耦合電漿對被處理 基板施加規定的電漿處理。感應耦合電漿處理裝置的高頻 天線多使用漩渦狀的平面天線。 惟在近年，LCD玻璃基板的大型化快速進展，因此， 感應耦合電漿處理裝置也不得不大型化，對應此，高頻天 線也在大型化。 但是，如果將漩渦狀的高頻天線直接大型化，便會 有，天線長度會變長，天線阻抗變高，供給高頻天線的高 頻電力很難取得匹配，天線電位變高的問題。天線電位變 高時，高頻天線與電漿間的電容耦合增強，因而會發生’ 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） ^批衣----；---1T----,-- (請先閲讀背面之注意事項再填寫本頁) 589927 A7 B7 五、發明説明（2) 無法有效形成感應耦合電漿，同時，電場的分布發生偏 移，使電漿密度不均一，處理變不均一的問題。 (請先閲讀背面之注意事項再填寫本頁) 習知的降低天線阻抗的技術有，在平面內將高頻天線 多重化以降低阻抗的技術（日本特開平8 - 8 3 6 9 6號公報 等）。 【發明所欲解決的課題】 然而，以往的多重化天線在中央有分支點，因此多重 化進展時，分支點會平板化，電容耦合成分增加，無法獲 得充分的電漿密度，同時，如上述，基板大型化時，要防 止這種天線因多重化造成的電場分布的偏移，其效果會很 有限。因此，業界強力要求，進一步減少電容耦合成分， 再改善因電場分布的偏移造成的處理的不均一，以更高密 度的電漿實現均一的電漿處理。 經濟部智慧財產局員工消費合作社印製 本發明是有鑑於上述實情而完成者，其目的在提供， 不會產生，對大型基板，因電容耦合成分使電漿密度降 低，及電場分布的偏移造成的電漿密度的不均一，能以更 高密度的電漿，實現均一的電漿處理的感應耦合電漿處理 裝置。 【解決課題的手段】 爲了解決上述課題，本發明提供，具備有：收容被處 理基板，施加電漿處理的處理室；在上述處理室內載置被 處理基板的基板載置台；向上述處理室內供應處理氣體的 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 589927 A7 _ _B7_____ 五、發明説明（3) (請先閱讀背面之注意事項再填寫本頁) 處理氣體供應系統；將上述處理室內排氣的排氣系統；構 成上述處理室的上部壁的介電體壁；將天線導線形成爲規 定圖案，配設在對應上述處理室外的上述介電體壁的部 分，藉由供給規定的高頻電力，在上述處理室內形成感應 電場用的高頻天線；以及，向上述高頻天線的中心部附近 供應高頻電源的高頻電力的供電構件，由於向上述高頻天 線供應高頻電力，在上述處理室內形成感應耦合電漿，對 被處理基板施加電漿處理的感應耦合電漿處理裝置，其特 徵爲，上述高頻天線具有，上述天線導線的存在密度變疏 的部分，及變密的部分，同時，其中心部分不存在有天線 導線。 因爲高頻天線具有天線導線的存在密度變疏的部分， 及變密的部分，因此，可以使感應電場均一化（消除感應電 場分布的偏移），可以生成均一的電漿，由於對應供電部分 的中心部分不存在有天線導線，因此，縱使大型基板，仍 可以減低天線與電漿的電容耦合，可以抑制電漿密度的降 低。 經濟部智慧財產局員工消費合作社印裝 在上述感應耦合電漿處理裝置，上述高頻天線，最好 從上述供電構件分出複數的上述天線導線，並多重化。如 此多重化，便可以減低電感、降低天線阻抗、降低天線電 位，可以進一步有效解除上述電場分布的不均一，同時， 使其不容易發生電容耦合。使此天線導線的數目爲8條而 加以8重化，則可以使這種效果極高。 天線導線串聯有一個或複數個電容器較佳。藉此可以 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -7- 589927 A7 B7 五、發明説明（4) 降低天線阻抗，降 (請先閱讀背面之注意事項再填寫本頁) 低天線電位。同時，在多重化的天線，複數條天線導 線均串聯有一個或複數個電容器，便可以與多重化的相乘 作用，進一步提高降低天線阻抗的效果。 上述高頻天線的一部分或全部最好離開上述介電體 壁。如此使高頻天線適度離開介電體壁，便可以降低高頻 天線與電漿間的電容耦合。同時，在此高頻天線，也可以 使中央部分離開介電體壁的距離，較周緣部分離開介電體 壁的距離爲大。藉此可以使天線的電位最高的供電部附近 部分離開介電體壁較遠，有效減低電容耦合成分。這時， 可以使天線的周緣部接觸介電體壁，僅中央部分離開介電 體壁。 經濟部智慧財產局員工消費合作社印繁 而天線導線有8條時，高頻天線在其中心部周圍，最 好是，具有連接在配設於離中心約略相同半徑位置且分別 錯開90°位置的上述供電構件的4個供電部，從各供電部分 別向外側延伸有兩條天線導線，從各供電部延伸的兩條天 線導線，是相互靠近配設成平行狀，具有：從供電部延伸 至天線周緣的中間位置的第1直線部；在上述第1直線部 的終端位置向內側彎曲90°，並延伸到至天線周緣的中間位 置的第2直線部；在第2直線部的終端位置向斜方向外側 彎曲，並延伸到天線周緣部的第3直線部；在第3直線部 的終端位置彎曲，並與上述第1直線部略成平行延伸的第4 直線部，從相鄰接的供電部延伸的第1直線部是依序錯開 9 0 ^，藉由從4個供電部分別延伸各兩條的天線導線的第1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -8- 589927 A7 B7 五、發明説明（5) (請先閱讀背面之注意事項再填寫本頁) 直線部及第2直線部，形成緊密配置天線導線的中央部， 由第4直線部形成緊密配置天線導線的周緣部，及由上述 第3直線部形成疏鬆配置天線導線的中間部，上述4個供 電部內側的中心部則不存在有天線導線。 由於如此構成，可在高頻天線形成天線導線的適當的 疏密，可以使電場分布均一化，並由於將天線8重化，因 此可以降低天線阻抗，而且，因爲是將供電部設在中心部 的周圍，使其不會因多重化使電容耦合成分增加，因此， 縱使大型基板，也不會因電容耦合成分使電漿密度降低， 及因電場分布的偏移使電漿密度產生不均一，能以更高密 度的電漿，進行均一的電漿處理。 經濟部智慧財產局員工消費合作社印製 這時，8條天線導線是每隔一條由4條長度相同的兩組 構成較佳。藉此，可分別錯開90°配置個4組完全相同的天 線導線對，因此天線導線的配置成對稱型，電場強度均一 性很高。該8條天線導線的長度可以相同。而且，從各供 電部延伸的兩條天線導線中內側部分者，具有在上述第4 直線部的終端位置向內側彎曲90°，並延伸的第5直線部較 佳。藉此可以很容易使8條天線導線的長度相同。同時， 上述8條天線導線的周緣側端部經由電容器接地較佳。可 以藉此降低天線阻抗β 而且，高頻天線在其中心部周圍，具有連接在配設於 離中心約略相同半徑位置且分別錯開90Μ立置的上述供電構 件的4個供電部，從各供電部分別向外側延伸一條合計4 條天線導線，從各供電部延伸的天線導線，具有：從供電 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ29?公釐） -9- 589927 kl B7 五、發明説明（6) (請先閲讀背面之注意事項再填寫本頁) 部延伸至天線周緣的中間位置的第1直線部；在上述第1 直線部的終端位置向內側彎曲9(Τ，並延伸到至天線周緣的 中間位置的第2直線部；在第2直線部的終端位置向斜方 向外側彎曲，並延伸到天線周緣部的第3直線部；在第3 直線部的終端位置彎曲，並與上述第1直線部略成平行延 伸的第4直線部，從相鄰接的供電部延伸的第1直線部是 依序錯開90°，藉由從4個供電部分別延伸的天線導線的第 1直線部及第2直線部，形成緊密配置天線導線的中央部， 由第4直線部形成緊密配置天線導線的周緣部，由上述第3 直線部形成疏鬆配置天線導線的中間部，上述4個供電部 內側的中心部，則不存在有天線導線。 經濟部智慧財產局員工消費合作社印製 這種架構是，上述8條天線導線構成的高頻天線同樣 具有4個供電部，從此等供電部各延伸與上述同樣架構的 天線導線的架構，因此與上述架構一樣，可在高頻天線形 成天線導線的適當的疏密，使電場分布均一化，並由於將 天線4重化，因此雖比不上8重化時，但仍可以降低天線 阻抗，而且，因爲是將供電部設在中心部的周圍使其不會 因多重化使電容耦合成分增加，因此，縱使大型基板，也 不會因電容耦合成分使電漿密度降低，及因電場分布的偏 移使電漿密度產生不均一，能以更高密度的電漿進行均一 的電漿處理。 這時，在上述各天線的周緣側端部，與上述第3直線 部之間裝設有電容器較佳。藉此可以進一步減低天線阻 抗，可以使天線的電位在中途降低。同時，設在上述第3 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X29*7公釐） -10- 589927 A7 B7 五、發明説明（7) 直線部的電容器是位於天線導線的長度中心位置，可以進 一步提高這種效果。 (請先閲讀背面之注意事項再填寫本頁) 【發明的實施形態】 茲參照附圖說明本發明的實施形態如下。第1圖是表 示本發明一實施形態的感應耦合電漿蝕刻裝置的截面圖。 本裝置是在，例如製造LCD的過程中，在LCD玻璃基板上 形成薄膜電晶體時，用以蝕刻金屬膜、ITO膜、氧化膜等 時使用。 此電漿蝕刻裝置具有由導電性材料，例如內壁面經過 陽極氧化處理的鋁所構成的角筒形狀的氣密本體容器1。此 本體容器1可以分解，而由接地線la接地。本體容器1由 介電體壁2區隔成上下的天線室3及處理室4。因此，介電 體壁2構成處理室4的天板。介電體壁2是由Al2〇3等的 陶瓷、石英等構成。 經濟部智慧財產局員工消资合作社印製 在介電體壁2的下側部分嵌裝有供應處理氣體用的簇 射框體Π。簇射框體Π配設成十字狀，具有從下方支持介 電體壁2的構造。再者，支持上述介電體壁2的簇射框體 11，成爲藉由數根撐條（未圖示）吊掛在本體容器1的天板的 狀態。 此簇射框體1 1是用導電性材料，最好是用金屬，例如 其內面經過陽極氧化處理使其不會發生污染物的鋁所構 成。此簇射框體11形成有水平延伸的氣體流路12，此氣體 流路12連通在向下方延伸的複數氣體吐出口 12a。另一方 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨〇乂297公釐） *~ -11 - 589927 A7 B7__ _ 五、發明説明（8) 面，在介電體壁2的上面中央，設有連通此氣體流路12的 氣體供應管20a。氣體供應管20a從本體容器1的天板貫通 至其外側，連接到包含處理氣體供應源及閥系統等的處理 氣體供應系統20。因此，在電漿處理時，從處理氣體供應 系統20供給的處理氣體經由氣體供應管20a供給簇射框體 11，從其下面的氣體吐出口 12a吐出到處理室4內。 本體容器1的天線室3的側壁3a與處理室4的側壁4a 間設有向內側突出的支持架5，在此支持架5上載置介電體 壁2 〇 在天線室3於介電體壁2上配設有面向介電體壁2的 高頻（RF)天線13。此高頻天線13因絕緣構件構成的隔片 13a，而離開介電體壁2在50 mm以下的範圍。在天線室3 . .的中央部附近，設有筆直延伸的4個供電構件1 6，此等供 電構件16是經由匹配器14連接有高頻電源15。供電構件 16是設在上述氣體供應管20a的周圍。再者，高頻天線13 的詳情後述。 電漿處理中，從高頻電源1 5對高頻天線1 3供應形成 感應電場用的例如頻率1 3 . 56 MHz的高頻電力。由如此供 應高頻電力的高頻天線1 3，在處理室4內形成感應電場， 藉此感應電場，使從簇射框體1 1供給的處理氣體電漿化。 這時的高頻電源15的輸出，要適宜設定成足夠產生電漿的 値。 在處理室4的下方，夾著介電體壁2面向高頻天線13 狀，設有當作載置LCD玻璃基板G用載置台的感受器 I紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） • · I •裝-- (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 -12 - 589927 A7 __B7__ 五、發明説明（9) (請先閱讀背面之注意事項再填寫本頁) (SUSCept〇r)22。感受器22是由導電性材料，例如表面經陽 極氧化處理的鋁所構成。載置在感受器22的LCD玻璃基 板G是藉由靜電吸盤（未圖示）吸著保持在感受器22。 感受器22收容在絕緣體框24內，並且由空心的支柱 25支持。支柱25以可保持氣密狀貫穿本體容器1的底部， 由配設在本體容器1外的昇降機構（未圖示）加以支持，運進 運出基板G時，以昇降機構上下方向驅動感受器22。再 者，在收容感受器22的絕緣體框24與本體容器1的底部 之間，配設有可以氣密狀包圍支柱25的波紋管26。藉此， 縱使感受器22上下移動，仍可以保證處理室4內的氣密 性。同時，在處理室4的側壁4a設有運進運出基板G用的 運進運出口 27a，及用以開關的閘閥27 ^ 經由設在空心的支柱25內的供電棒25a，經由匹配器 28在感受器22連接有高頻電源29。此高頻電源29在電漿 處理中，對感受器22施加偏壓用的高頻電力，例如頻率6 MHz的尚頻電力。藉由偏壓用的商頻電力，將處理室4內 生成的電漿中的離子有效引進基板G。 經濟部智慧財產局員工消費合作社印製 而且，在感受器22內配設有控制基板G的溫度用，由 陶瓷加熱器等的加熱構件或冷媒流路等構成的溫度控制機 構，及溫度感測器（均未圖示）。對此等機構或構件的配管或 配線均通過空心的支柱25導出本體容器1外。 在處理室4的底部，經由排氣管31連接有包含真空幫 浦等的排氣裝置30。藉由此排氣裝置30將處理室4排氣， 電漿處理中，將處理室4內設定、維持在規定的真空環境 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -13 - 589927 A7 _B7 _ 五、發明説明（ (例如 1. 3 3 Pa)。 其次，說明上述高頻天線1 3的詳細構造。 (請先閲讀背面之注意事項再填寫本頁) 第2圖是表示高頻天線1 3的平面圖。如第2圖所示， 高頻天線1 3是外形正方形的8重天線。以下爲了方便，藉 由高頻天線1 3的中心爲0的XY座標系說明此高頻天線 13 〇 此高頻天線13在其中心部周圍，具有連接在配設於離 中心約略相同半徑位置且分別錯開90°位置的供電構件1 6 的4個供電部4 1、42、43、44，從各供電部分別向外側延 伸有各兩條天線導線。具體上是，從供電部4 1延伸兩條天 線導線45及46，從供電部42延伸兩條天線導線47及 48，從供電部43延伸兩條天線導線49及50，從供電部44 .延伸兩條天線導線5 1及52。而從各供電部延伸的兩條天線 導線是相互靠近配設成平行狀。 經濟部智慧財產局員工消費合作社印製 從供電部4 1延伸的天線導線45及46具有：分別向Y 軸負方向，從供電部4 1延伸至天線周緣的中間位置的第1 直線部45 a、46a ;在上述第1直線部的終端位置向內側彎 曲90。，並延伸到，至天線周緣的中間位置的第2直線部 45b、46b ;在第2直線部的終端位置向斜方向外側彎曲約 45°角度，並延伸到天線周緣部的第3直線部45c、46c ;在 第3直線部45 c、46c的終端位置彎曲，並與上述第1直線 部45 a、46a略成平行延伸的第4直線部45 d、46d。同時， 爲使內側的天線導線46與外側的天線導線45同長，而具 有在上述第4直線部46d的終端位置向內側彎曲90。的第5 本紙張尺度適用中國國家標隼（CNS ) A4規格(210X29*7公釐） -14 - 589927 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（1) 直線部46e。而天線導線45是在第4直線部45d的終端， 經由串聯的電容器1 8接地，天線導線46是在第5直線部 46e的終端，經由串聯的電容器18接地。 從供電部4 1的順時針方向相鄰接的供電部42延伸的 天線導線47及48，分別具有：從上述天線導線45、46的 第1直線部45a、46a方向錯開90°的方向，亦即，向X軸 負方向，從供電部42延伸至天線周緣的中間位置的第1直 線部47a、48a ;在上述第1直線部的終端位置向內側彎曲 90°，並延伸到，至天線周緣的中間位置的第2直線部 47b、48b ;在第2直線部的終端位置向斜方向外側彎曲約 45 0角度，並延伸到天線周緣部的第3直線部47c、48c ;在 第3直線部47c、48c的終端位置彎曲，並與上述第1直線 部47a、48a略成平行延伸的第4直線部47d、48d。同時， 爲使內側的天線導線48與外側的天線導線47同長，而具 有在上述第4直線部48d的終端位置向內側彎曲90°的第5 直線部48e。而天線導線47是在第4直線部47d的終端， 經由串聯的電容器1 8接地，天線導線48是在第5直線部 48e的終端，經由串聯的電容器18接地。 從供電部42的順時針方向相鄰接的供電部43延伸的 天線導線49及50，分別具有：從上述天線導線47、48的 第1直線部47a、48a方向錯開90°的方向，亦即，向Y軸 正方向，從供電部43延伸至天線周緣的中間位置的第1直 線部49a、50a ;在上述第1直線部的終端位置向內側彎曲 90°，並延伸到，至天線周緣的中間位置的第2直線部 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 589927 A7 B7 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to an inductively-coupled plasma processing device that applies a process such as etching to a substrate. [Prior art] In the manufacturing process of a liquid crystal display device (LCD), in order to apply a predetermined treatment to a glass substrate, various plasma processing devices such as a plasma etching device or a plasma CVD film forming device are required. Such a plasma processing apparatus has conventionally used a capacitive coupling processing apparatus, but in recent years, attention has been paid to an inductively coupled plasma processing apparatus having the advantages of high vacuum and high density plasma. An inductively coupled plasma processing device is configured by placing a high-frequency antenna on the outside of a dielectric window containing a substrate to be processed, and supplying a processing gas into the processing container. At the same time, high-frequency power is supplied to the high-frequency antenna. It generates an inductively coupled plasma in a processing container, whereby the inductively coupled plasma applies a prescribed plasma treatment to a substrate to be processed. Most of the high-frequency antennas of the inductively coupled plasma processing device use a vortex planar antenna. However, in recent years, the enlargement of LCD glass substrates has progressed rapidly. Therefore, the inductively coupled plasma processing apparatus has also had to be enlarged. In response, the high-frequency antennas have also been enlarged. However, if the swirl-shaped high-frequency antenna is directly enlarged, there will be problems that the antenna length becomes longer, the antenna impedance becomes higher, it is difficult to match the high-frequency power supplied to the high-frequency antenna, and the antenna potential becomes high. When the antenna potential becomes high, the capacitive coupling between the high-frequency antenna and the plasma will increase, so it will happen 'This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ^ batch clothes ----- --1T ----,-(Please read the precautions on the back before filling this page) 589927 A7 B7 V. Description of the invention (2) Inductive coupling plasma cannot be formed effectively, and the electric field distribution is shifted. The plasma density is made uneven, and the problem of uneven treatment is solved. (Please read the precautions on the back before filling in this page.) Known techniques for reducing the impedance of antennas include the technique of reducing the impedance of multiple high-frequency antennas in a plane (Japanese Unexamined Patent Publication No. 8-8 3 6 9 6 Wait). [Problems to be Solved by the Invention] However, the conventional multiplexed antenna has a branch point in the center. Therefore, as the multiplexing progresses, the branch point will be flattened, and the capacitive coupling component will increase, and a sufficient plasma density cannot be obtained. When the substrate is large, it is necessary to prevent the shift of the electric field distribution caused by the multiplexing of the antenna, and the effect will be limited. Therefore, the industry strongly demands that the capacitance coupling component be further reduced, and the processing unevenness caused by the deviation of the electric field distribution be further improved to achieve a uniform plasma processing with a higher density plasma. The invention was printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs in view of the above facts. The purpose of the invention is to provide, for a large substrate, the plasma density is reduced due to the capacitive coupling component due to capacitive coupling components, and the electric field distribution is offset. The induced plasma density is non-uniform, and an inductively coupled plasma processing device capable of achieving uniform plasma processing with a higher density plasma. [Means for Solving the Problem] In order to solve the above-mentioned problem, the present invention provides a processing chamber for accommodating a substrate to be processed and applying plasma processing; a substrate mounting table on which the substrate to be processed is placed in the processing chamber; and supply to the processing chamber. The paper size for processing gas is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) 589927 A7 _ _B7_____ V. Description of the invention (3) (Please read the precautions on the back before filling this page) Processing gas supply system; will An exhaust system for exhausting air in the processing chamber; a dielectric wall constituting an upper wall of the processing chamber; an antenna wire is formed into a predetermined pattern, and is arranged in a portion corresponding to the dielectric wall in the processing chamber, and is supplied by A predetermined high-frequency power forms a high-frequency antenna for inducing an electric field in the processing chamber; and a power supply member that supplies high-frequency power of high-frequency power to the vicinity of the center of the high-frequency antenna. High-frequency power, forming an inductive coupling plasma in the processing chamber, and applying inductive coupling of plasma processing to the substrate to be processed Plasma processing apparatus, which is characterized in the high frequency antenna having the antenna conductor exists a density thinning portion, and the portion becomes dense, while its central portion with an antenna conductor does not exist. Because the high-frequency antenna has a portion where the density of the antenna wire becomes sparse, and a portion that becomes denser, the induction electric field can be uniformized (elimination of the deviation of the induction electric field distribution), and a uniform plasma can be generated. There is no antenna wire in the center of the antenna. Therefore, even with a large substrate, the capacitive coupling between the antenna and the plasma can be reduced, and the decrease in the density of the plasma can be suppressed. Printed on the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the induction coupling plasma processing device and the high-frequency antenna are preferably divided into a plurality of the antenna wires from the power supply member and multiplexed. This multiplexing can reduce inductance, antenna impedance, and antenna potential, further effectively eliminate the above-mentioned uneven electric field distribution, and at the same time, make it less prone to capacitive coupling. This effect can be made extremely high by making the number of antenna wires 8 and 8-fold. It is preferred that the antenna wire has one or more capacitors in series. In this way, this paper can be applied to the Chinese National Standard (CNS) A4 specification (210X297 mm) -7- 589927 A7 B7 V. Description of the invention (4) Reduce the antenna impedance and reduce (Please read the precautions on the back before filling this page ) Low antenna potential. At the same time, in a multiplexed antenna, multiple antenna wires are connected in series with one or more capacitors, which can multiply with the multiplexed antenna and further improve the effect of reducing the antenna impedance. It is preferable that a part or all of the high-frequency antenna is separated from the dielectric wall. In this way, the high-frequency antenna is properly separated from the dielectric wall, which can reduce the capacitive coupling between the high-frequency antenna and the plasma. At the same time, in this high-frequency antenna, the distance between the central part and the dielectric wall can be made larger than the distance between the peripheral part and the dielectric wall. Thereby, the part near the power supply part with the highest potential of the antenna can be far away from the dielectric wall, and the capacitive coupling component can be effectively reduced. At this time, the peripheral portion of the antenna can be brought into contact with the dielectric wall, and only the central portion can be separated from the dielectric wall. When the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints and prints and there are 8 antenna wires, the high-frequency antenna is preferably around its center, and it is preferably connected to the antennas that are arranged at approximately the same radius from the center and staggered by 90 °. The four power supply parts of the above power supply member have two antenna wires extending from each power supply part to the outside, and the two antenna wires extending from each power supply part are arranged close to each other in parallel and have: The first straight line portion at the intermediate position of the antenna peripheral edge; the second straight line portion bent inward at 90 ° at the terminal position of the first straight line portion and extending to the middle position of the antenna peripheral edge; The third straight portion that is bent outward in the oblique direction and extends to the peripheral portion of the antenna; the fourth straight portion that is bent at the terminal position of the third straight portion and extends slightly parallel to the first straight portion, is supplied from adjacent power supply The first straight part of the extension is staggered by 9 0 ^, and the first paper size is extended by the four power supply parts to each of the two antenna wires. The paper size applies the Chinese National Standard (CNS) A4 specification (21 0X297 mm) -8- 589927 A7 B7 V. Description of the invention (5) (Please read the precautions on the back before filling this page) The straight part and the second straight part form the central part where the antenna wire is closely arranged. The straight line portion forms a peripheral edge portion where the antenna wire is closely arranged, and the third straight line portion forms a middle portion where the antenna wire is loosely arranged, and the center portion inside the four power supply portions does not have the antenna wire. Due to such a structure, appropriate denseness of the antenna wires can be formed in the high-frequency antenna, the electric field distribution can be uniformized, and the antenna 8 can be made heavy, so that the antenna impedance can be reduced, and the power supply section is provided at the center section. Around, it will not increase the capacitive coupling component due to multiplexing. Therefore, even for large substrates, the plasma density will not decrease due to the capacitive coupling component, and the plasma density will not be uneven due to the deviation of the electric field distribution. Uniform plasma treatment with higher density plasma. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs At this time, it is better that each of the eight antenna wires is composed of four groups of the same length. In this way, four groups of exactly the same antenna wire pairs can be arranged at 90 ° shifts, respectively. Therefore, the antenna wire is arranged symmetrically, and the electric field strength is highly uniform. The eight antenna wires can be the same length. Furthermore, it is preferable that the inner portion of the two antenna wires extending from each power supply portion has a fifth straight portion that is bent inward at 90 ° at the terminal position of the fourth straight portion and extends. This makes it easy to make the eight antenna wires the same length. At the same time, it is preferable that the peripheral end portions of the eight antenna wires are grounded via a capacitor. The antenna impedance β can be reduced by this. Moreover, the high-frequency antenna has four power supply parts connected to the power supply members arranged at approximately the same radius from the center and staggered by 90M around the center part of the high-frequency antenna. Do not extend a total of 4 antenna wires to the outside. The antenna wires extending from each power supply unit have the following: from the power supply, the paper size applies the Chinese National Standard (CNS) A4 specification (210 × 29? Mm) -9- 589927 kl B7 V. Description of the invention (6) (Please read the precautions on the back before filling in this page) The first straight part that extends to the middle position of the antenna peripheral edge; bends 9 (T, and extends inward) at the end position of the first straight part The second straight portion to the middle position of the antenna periphery; the terminal position of the second straight portion is bent outward in the oblique direction and extends to the third straight portion of the antenna peripheral portion; and the second straight portion is bent at the terminal position of the third straight portion, and A fourth straight line portion extending slightly parallel to the first straight line portion. The first straight line portion extending from the adjacent power supply portion is sequentially shifted by 90 °, and the antennas are extended from the four power supply portions, respectively. The first straight portion and the second straight portion of the lead form a central portion where the antenna lead is closely arranged, the fourth straight portion forms a peripheral portion where the antenna lead is closely arranged, and the third straight portion forms a middle portion where the antenna lead is loosely arranged. There are no antenna wires in the central part inside the above-mentioned 4 power supply units. The structure printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is that the high-frequency antenna composed of the above 8 antenna wires also has 4 power supply units. The power supply sections each extend the structure of the antenna wires of the same structure as above, so as with the above structure, the appropriate denseness of the antenna wires can be formed in the high-frequency antenna, so that the electric field distribution is uniformized, and the antenna 4 is doubled, so Although it can not be compared with the 8-fold, it can still reduce the antenna impedance. Also, because the power supply section is located around the center section, it will not increase the capacitive coupling component due to multiplexing. Therefore, even large substrates, It will reduce the plasma density due to the capacitive coupling component, and cause the plasma density to be uneven due to the deviation of the electric field distribution. Uniform plasma treatment. At this time, it is better to install a capacitor between the peripheral end of each antenna and the third linear portion. This can further reduce the antenna impedance and reduce the potential of the antenna midway. At the same time, the paper size set on the third paper above applies to the Chinese National Standard (CNS) A4 specification (210X29 * 7mm) -10- 589927 A7 B7 V. Description of the invention (7) The capacitor of the straight part is located on the length of the antenna wire The center position can further enhance this effect. (Please read the notes on the back before filling out this page) [Embodiments of the invention] The following describes the embodiments of the present invention with reference to the drawings. The first figure shows an embodiment of the present invention Sectional view of a form of inductively coupled plasma etching device. This device is used to etch metal films, ITO films, oxide films, etc. when forming thin-film transistors on LCD glass substrates in the process of manufacturing LCDs, for example. This plasma etching apparatus includes a hermetically sealed container 1 in the shape of a prism formed of a conductive material such as aluminum whose inner wall surface is anodized. The main body container 1 can be disassembled and grounded by a ground wire la. The main body container 1 is partitioned by a dielectric wall 2 into an upper and lower antenna chamber 3 and a processing chamber 4. Therefore, the dielectric wall 2 constitutes a ceiling of the processing chamber 4. The dielectric wall 2 is made of ceramic such as Al203, quartz, or the like. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A cluster frame Π for processing gas supply is embedded in the lower part of the dielectric wall 2. The shower frame Π is arranged in a cross shape and has a structure supporting the dielectric wall 2 from below. In addition, the shower frame 11 supporting the dielectric wall 2 is in a state of being hung from the top plate of the main body container 1 by a plurality of stays (not shown). The shower frame 11 is made of a conductive material, preferably metal, such as aluminum whose inner surface is anodized so as not to cause contamination. The shower frame 11 is formed with a horizontally extending gas flow path 12, and the gas flow path 12 communicates with a plurality of gas discharge ports 12a extending downward. The paper size of the other side applies the Chinese National Standard (CNS) A4 specification (2 丨 〇 乂 297mm) * ~ -11-589927 A7 B7__ _ 5. Description of the invention (8) The surface is at the upper center of the dielectric wall 2 A gas supply pipe 20a is provided to communicate with the gas flow path 12. The gas supply pipe 20a passes from the top plate of the main body container 1 to the outside thereof, and is connected to a processing gas supply system 20 including a processing gas supply source, a valve system, and the like. Therefore, during plasma processing, the processing gas supplied from the processing gas supply system 20 is supplied to the shower frame 11 through the gas supply pipe 20a, and is discharged into the processing chamber 4 from the gas discharge port 12a below it. A support frame 5 protruding inward is provided between the side wall 3 a of the antenna chamber 3 of the main body container 1 and the side wall 4 a of the processing chamber 4, and a dielectric wall 2 is placed on the support frame 5. The antenna chamber 3 is on the dielectric wall. 2 is provided with a high-frequency (RF) antenna 13 facing the dielectric wall 2. The high-frequency antenna 13 is separated from the dielectric wall 2 by a distance of 50 mm or less due to a spacer 13a made of an insulating member. Near the central portion of the antenna room 3, there are provided four power supply members 16 extending straight. These power supply members 16 are connected to a high-frequency power source 15 via a matching device 14. The power supply member 16 is provided around the gas supply pipe 20a. The details of the high-frequency antenna 13 will be described later. In the plasma processing, high-frequency power, such as a frequency of 13.56 MHz, for forming an induced electric field is supplied to the high-frequency antenna 13 from a high-frequency power source 15. The high-frequency antenna 13 supplied with high-frequency power in this way forms an induced electric field in the processing chamber 4 and thereby induces an electric field to plasmaize the processing gas supplied from the shower frame 11. The output of the high-frequency power supply 15 at this time should be appropriately set to a value sufficient to generate plasma. Below the processing chamber 4, a dielectric body 2 is sandwiched between the high-frequency antenna 13 and a susceptor I serving as a stage for placing the LCD glass substrate G. The paper size is in accordance with Chinese National Standard (CNS) A4 (210X297). (Mm) • · I • Equipment-(Please read the notes on the back before filling out this page) Order printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -12-589927 A7 __B7__ 5. Description of the invention (9) (please first Read the notes on the back and fill out this page) (SUSCept〇r) 22. The susceptor 22 is made of a conductive material, such as aluminum whose surface is anodized. The LCD glass substrate G placed on the susceptor 22 is held by the susceptor 22 by suction with an electrostatic chuck (not shown). The susceptor 22 is housed in an insulator frame 24 and is supported by a hollow pillar 25. The pillar 25 penetrates the bottom of the main body container 1 in an air-tight manner, and is supported by a lifting mechanism (not shown) arranged outside the main body container 1. When the substrate G is carried in and out, the susceptor 22 is driven in the vertical direction of the lifting mechanism. . A corrugated tube 26 is provided between the insulator frame 24 accommodating the susceptor 22 and the bottom of the main body container 1 so as to enclose the pillar 25 in an airtight manner. Thereby, even if the susceptor 22 is moved up and down, the airtightness in the processing chamber 4 can be ensured. At the same time, a side wall 4a of the processing chamber 4 is provided with a loading and unloading port 27a for loading and unloading the substrate G, and a gate valve 27 for opening and closing ^ via a power supply rod 25a provided in the hollow pillar 25, A high-frequency power source 29 is connected to the susceptor 22. This high-frequency power supply 29 applies a high-frequency power for biasing the susceptor 22 during the plasma processing, for example, a high-frequency power having a frequency of 6 MHz. The ions in the plasma generated in the processing chamber 4 are efficiently introduced into the substrate G by the commercial frequency power for bias. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The sensor 22 is provided with a temperature control mechanism for controlling the temperature of the substrate G, a heating member such as a ceramic heater or a refrigerant flow path, and a temperature sensor. (Both are not shown). The piping and wiring of these mechanisms and components are led out of the main body container 1 through hollow pillars 25. An exhaust device 30 including a vacuum pump and the like is connected to the bottom of the processing chamber 4 via an exhaust pipe 31. By this exhaust device 30, the processing chamber 4 is exhausted. During the plasma processing, the processing chamber 4 is set and maintained in a predetermined vacuum environment. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm)- 13-589927 A7 _B7 _ V. Description of the invention ((eg 1. 3 3 Pa). Next, the detailed structure of the above-mentioned high-frequency antenna 13 is explained. (Please read the precautions on the back before filling this page) Figure 2 is A plan view showing the high-frequency antenna 1 3. As shown in FIG. 2, the high-frequency antenna 13 is a square-shaped 8-fold antenna. For convenience, the following description is made by using the XY coordinate system where the center of the high-frequency antenna 13 is 0. High-frequency antenna 13 〇 This high-frequency antenna 13 has four power-supply sections 4 1, 42, 43 connected to power-supply members 16 arranged at approximately the same radius from the center and offset by 90 ° from the center. , 44, each of the two antenna wires is extended from each power supply unit to the outside. Specifically, two antenna wires 45 and 46 are extended from the power supply unit 41, and two antenna wires 47 and 48 are extended from the power supply unit 42. The power supply section 43 extends two antenna wires 49 and 50 from the power supply section 44. Extend the two antenna wires 51 and 52. The two antenna wires extending from each power supply unit are arranged close to each other and arranged in parallel. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the antenna extending from the power supply unit 41. The lead wires 45 and 46 have first linear portions 45 a and 46 a respectively extending in the negative direction of the Y-axis from the power supply portion 41 to the intermediate position of the antenna periphery, and are bent inward 90 at the end positions of the first linear portion. And extend to the second straight portion 45b, 46b to the middle position of the antenna periphery; at the terminal position of the second straight portion, it is bent outward at an angle of approximately 45 ° at an end position of the second straight portion, and extends to the third straight portion 45c of the antenna peripheral portion, 46c; the fourth straight portion 45d, 46d which is bent at the end position of the third straight portion 45c, 46c and extends slightly parallel to the first straight portion 45a, 46a. At the same time, the inner antenna wire 46 It is the same length as the antenna wire 45 on the outside and has a 90 ° bend inward at the end position of the fourth straight portion 46d. The fifth paper size applies the Chinese National Standard (CNS) A4 specification (210X29 * 7 mm)- 14-589927 Employee Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Cooperative printed A7 B7 V. Description of the invention (1) The straight line portion 46e. The antenna wire 45 is the terminal of the fourth straight line portion 45d, and is connected to the ground via the capacitor 18 in series. The antenna wire 46 is the terminal of the fifth straight portion 46e. And grounded via a series capacitor 18. The antenna conductors 47 and 48 extending from the power feeder 42 adjacent to the power feeder 41 in a clockwise direction have first linear portions 45a and 46a from the antenna conductors 45 and 46, respectively. The directions are staggered by 90 °, that is, the first straight portions 47a, 48a extending from the power supply portion 42 to the middle position of the antenna periphery in the negative X-axis direction; bent at the end position of the first straight portion by 90 ° inward And extend to the second straight portion 47b, 48b to the middle position of the antenna periphery; at the terminal position of the second straight portion, it is bent outward at an angle of about 45 °, and extends to the third straight portion 47c of the antenna periphery , 48c; fourth linear portions 47d, 48d which are bent at the end positions of the third linear portions 47c, 48c and extend slightly parallel to the first linear portions 47a, 48a. At the same time, in order to make the inner antenna lead 48 and the outer antenna lead 47 the same length, a fifth straight portion 48e bent 90 ° inward at the terminal position of the fourth straight portion 48d is provided. The antenna wire 47 is a terminal at the fourth linear portion 47d, and is grounded via a capacitor 18 in series. The antenna wire 48 is a terminal at the fifth linear portion 48e, and is grounded via a capacitor 18 in series. The antenna wires 49 and 50 extending from the power supply section 43 adjacent to the power supply section 42 in the clockwise direction are respectively provided with directions shifted by 90 ° from the directions of the first linear portions 47a and 48a of the antenna wires 47 and 48, that is, , In the positive direction of the Y-axis, the first linear portions 49a, 50a extending from the power supply portion 43 to the middle position of the antenna periphery; at the terminal position of the first linear portion, bend inward 90 °, and extend to, to the antenna periphery The second straight part in the middle position. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)
-15- 589927 A7 B7 五、發明説明（讼 (請先閲讀背面之注意事項再填寫本頁) 49b、5Ob ;在第2直線部的終端位置向斜方向外側彎曲約 45°角度，並延伸到天線周緣部的第3直線部49c、50c ;在 第3直線部49c、5 0c的終端位置彎曲，並與上述第1直線 部49a、5 0a略成平行延伸的第4直線部49d、5 0d。同時， 爲使內側的天線導線50與外側的天線導線49同長，而具 有在上述第4直線部50d的終端位置向內側彎曲90°的第5 直線部50e。而天線導線49是在第4直線部49d的終端， 經由串聯的電容器1 8接地，天線導線50是在第5直線部 5 0e的終端，經由串聯的電容器18接地。 經濟部智慧財產局員工消費合作社印製 從供電部43的順時針方向相鄰接的供電部44延伸的 天線導線51及52，分別具有：從上述天線導線49、50的 第1直線部49a、50a方向錯開90°的方向，亦即，向X軸 正方向，從供電部44延伸至天線周緣的中間位置的第1直 線部5 1 a、52a ;在上述第1直線部的終端位置向內側彎曲 9(^，並延伸到，至天線周緣的中間位置的第2直線部 5 1b、52b ;在第2直線部的終端位置向斜方向外側彎曲約 45°角度，並延伸到天線周緣部的第3直線部51c、52c ;在 第3直線部5 1c、52c的終端位置彎曲，並與上述第1直線 部5 la、52a略成平行延伸的第4直線部51d、52d。同時， 爲使內側的天線導線52與外側的天線導線5 1同長，而具 有在上述第4直線部52d的終端位置向內側彎曲90°的第5 直線部52e。而天線導線5 1是在第4直線部5 1 d的終端， 經由串聯的電容器1 8接地，天線導線52是在第5直線部 52e的終端，經由串聯的電容器18接地。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -16- 589927 A7 _B7__ 五、發明説明（均 (請先閲讀背面之注意事項再填寫本頁) 而在4個供電部41、42、43、44間，不存在天線導線 的中心部分60的外側部分，形成配置天線導線45、46、 47、48、49、50、51、52 的第 1 直線部 45a、46a、47a、 48a、49a、50a、51a、52a 及第 2 直線部 45b、46b、47b、 4 8b、49b、50b、5 1b、52b的天線導線緊密存在的略呈正方 形的中央部61，形成配置第4直線部45d、46d、47d、 47c、49d、5 0d、5 1d、52d的天線導線緊密存在的略呈正方 形的周緣部62，在中央部61與周緣部62之間，形成配置 第 3 直線部 45c、46c、47c、48c、49c、50c > 51c、52c 的 天線導線疏鬆存在的中間部63。 天線導線45、46、47、48、49、50、51、52的長度相 同，且連接在各天線導線的電容器1 8均具有相同的電容 量。因此，在各天線導線流通的電流値相等。 其次說明，使用如以上構成的感應耦合電漿蝕刻裝置 對LCD基板G施加電漿蝕刻處理時的處理動作。 經濟部智慧財產局員工消費合作社印製 首先，以閘閥27成爲開的狀態下，從此處藉運送機構 (未圖示）將基板G運進處理室4,載置於感受器22的載置 面後，以靜電吸盤（未圖示）將基板G固定在感受器22上。 然後，從處理氣體供應系統20經簇射框體1 1的氣體吐出 口 12a，將含有蝕刻氣體的處理氣體吐出到處理室4內，同 時，藉由排氣裝置30經排氣管3 1將處理室4內真空排 氣，藉此將處理室內維持在例如1. 33 Pa程度的壓力環 境。 接著，從高頻電源15將13. 56 MHz的高頻施加於高 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -17- 經濟部智慧財產局員工消費合作社印製 589927 A7 B7 ___ 五、發明説明（1為 頻天線1 3，藉此經由介電體壁2在處理室4內形成均一的 感應電場。藉由如此形成的感應電場，處理氣體在處理室4 內電漿化，生成高密度的感應耦合電漿。 這時，高頻天線1 3是如上述，形成緊密配置天線導線 的中央部6 1及周緣部62，疏鬆配置天線導線的中間部 63，構成天線導線成緊密的部分，與成疏鬆的部分交互存 在的架構，且對應供電部分的中心部分60沒有天線存在’ 因此縱使基板G是一邊1 m以上的超大型基板，也不會發 生因電場分布的偏移造成的電漿密度不均一 ’及電容耦合 造成的電漿密度的降低。 從天線導線的中央部分供電的型式會有’處理容器的 中心部分的電容電場強度較大，周邊部分較小的傾向，但 如此，中心部分不存在有天線導線，並將天線導線的存在 密度形成疏密狀，則可在處理室4內的高頻天線1 3直下方 形成如第3圖所示的感應電場分布，在處理室4內的基板 G的配置部分，整平感應電場強度分布，使電場分布均 -- 〇 而因高頻天線13是從供電構件分出8條天線導線而加 以多重化，因此，較之僅1條時，可以將電感減低爲1/ 8，降低天線阻抗。因此，可以藉此有效降低天線電位，藉 此使其較難發生電場分布的不均一，或電容耦合成分的增 加。 而且，由於在天線導線45、46、47、48、49、50、 51、52的終端部分串聯有電容器18，因此可以藉此使天線 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） (請先閲讀背面之注意事項再填寫本頁)-15- 589927 A7 B7 V. Description of the invention (litigation (please read the precautions on the back before filling in this page) 49b, 5Ob; at the terminal position of the second straight part, bend outward at an angle of about 45 ° and extend to The third linear portions 49c, 50c of the antenna peripheral portion; the fourth linear portions 49d, 50d, which are bent at the end positions of the third linear portions 49c, 50c, and extend slightly parallel to the first linear portions 49a, 50a At the same time, in order to make the inner antenna lead 50 and the outer antenna lead 49 the same length, a fifth straight portion 50e bent 90 ° inward at the terminal position of the fourth straight portion 50d is provided. 4 The terminal of the straight line 49d is grounded via a series capacitor 18, and the antenna wire 50 is the terminal of the 5th straight line 50e, and is grounded via the series capacitor 18. Printed from the power supply department 43 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The antenna wires 51 and 52 extending in the clockwise direction adjacent to the power supply portion 44 respectively have a direction shifted by 90 ° from the direction of the first linear portions 49a and 50a of the antenna wires 49 and 50, that is, toward the X axis. Positive direction, extending from the power supply 44 to the antenna The first straight portion 5 1 a, 52 a at the middle position of the edge; the second straight portion 5 1 b, 52 b that is bent inward at the end position of the first straight portion and extends to the middle position of the antenna periphery. ; At the terminal position of the second linear portion, bent outward at an angle of about 45 ° in the oblique direction, and extending to the third linear portion 51c, 52c of the antenna peripheral portion; at the terminal position of the third linear portion 5 1c, 52c, and The first linear portions 51a and 52a extend parallel to the fourth linear portions 51d and 52d. At the same time, in order to make the inner antenna lead 52 and the outer antenna lead 51 have the same length, the fourth straight portion 52d is provided in the fourth straight portion 52d. The terminal position of the 5th straight line portion 52e bent inward by 90 ° is the terminal of the 4th straight line portion 5 1d, and the antenna wire 51 is grounded via the capacitor 18 connected in series, and the antenna line 52 is at the 5th straight portion 52e. The terminal is grounded via the capacitor 18 in series. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -16- 589927 A7 _B7__ V. Description of the invention (both (please read the precautions on the back before filling in) (This page) And among the 4 power supply sections 41, 42, 43, 44 The outer portion of the central portion 60 of the antenna wire does not exist, and the first straight portion 45a, 46a, 47a, 48a, 49a, 50a, 51a, 51a, 51a, 46a, 46a, 47, 48, 49, 50, 51, 52 are formed. 52a and the second straight portion 45b, 46b, 47b, 4 8b, 49b, 50b, 5 1b, and 52b are closely-spaced central portions 61, forming a fourth straight portion 45d, 46d, 47d, 47c The antenna wires of the antennas 49, 49d, 50d, 51d, and 52d have a slightly square peripheral edge portion 62, and a third linear portion 45c, 46c, 47c, 48c, 49c is formed between the central portion 61 and the peripheral edge portion 62. , 50c > 51c, 52c The intermediate portion 63 where the antenna wires are loose. The antenna wires 45, 46, 47, 48, 49, 50, 51, 52 have the same length, and the capacitors 18 connected to the antenna wires have the same capacitance. Therefore, the currents flowing through the antenna wires are equal. Next, the processing operation when the plasma etching process is applied to the LCD substrate G using the inductively coupled plasma etching apparatus configured as described above will be described. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs First, with the gate valve 27 opened, the substrate G is transported into the processing chamber 4 by a transport mechanism (not shown), and placed on the mounting surface of the sensor 22 The substrate G is fixed on the susceptor 22 with an electrostatic chuck (not shown). Then, the processing gas containing the etching gas is discharged from the processing gas supply system 20 through the gas discharge port 12a of the shower frame 11 into the processing chamber 4, and at the same time, the exhaust device 30 passes the exhaust pipe 31 through the exhaust pipe 31. The processing chamber 4 is evacuated by vacuum, thereby maintaining the processing chamber in a pressure environment of, for example, 1.33 Pa. Next, a high frequency of 13.56 MHz was applied from the high-frequency power source 15 to the high paper size. The Chinese National Standard (CNS) A4 specification (210X 297 mm) was applied. -17- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 589927 A7 B7 ___ V. Description of the invention (1 is a frequency antenna 1 3, whereby a uniform induction electric field is formed in the processing chamber 4 through the dielectric wall 2. With the induction electric field thus formed, the processing gas is electrically charged in the processing chamber 4. At this time, the high-frequency antenna 13 is formed as described above, and the central portion 61 and the peripheral portion 62 of the antenna wire are closely arranged, and the intermediate portion 63 of the antenna wire is loosely arranged to constitute the antenna wire. It is a compact structure that interacts with a loose part, and there is no antenna in the central part 60 corresponding to the power supply part. Therefore, even if the substrate G is a very large substrate with a side of 1 m or more, the bias due to the electric field distribution does not occur. Plasma density non-uniformity caused by shifting and reduction in plasma density caused by capacitive coupling. The type of power supplied from the central part of the antenna wire will have the Capacitive electric field strength tends to be larger and the peripheral part tends to be smaller, but in this case, there is no antenna wire in the center part and the density of the antenna wire is densely formed, then the high-frequency antenna 1 3 in the processing chamber 4 can be straight down The induction electric field distribution shown in FIG. 3 is formed. In the arrangement portion of the substrate G in the processing chamber 4, the induced electric field intensity distribution is flattened so that the electric field distribution is uniform. 〇 Because the high-frequency antenna 13 is divided from the power supply member, 8 antenna wires are multiplexed. Therefore, compared with only 1 antenna wire, the inductance can be reduced to 1/8, and the antenna impedance can be reduced. Therefore, the antenna potential can be effectively reduced to make it more difficult to generate an electric field. The uneven distribution or the increase of the capacitive coupling component. Furthermore, since the capacitors 18 are connected in series at the terminal portions of the antenna wires 45, 46, 47, 48, 49, 50, 51, and 52, the antenna can be used to make the paper scale Applicable to China National Standard (CNS) Α4 specification (210 × 297 mm) (Please read the precautions on the back before filling this page)
-18- 經濟部智慧財產局員工消費合作社印製 589927 A7 _ B7_ 五、發明説明（ 阻抗降低，使天線電位降低。 又因高頻天線13是藉由隔片13a與介電體壁2分離 開，因之，藉此也可以降低高頻天線1 3與電漿間的電容耦 合。再者，這時的離開距離可以依高頻電力的頻率、輸 出、所欲獲得的電漿密度’在50 mm以下的範圍適宜設 定。 而且，因天線導線 45、46、47、48、49、50、51、52 的長度均相同，且連接在各天線導線的電容器1 8的電容量 均相同，因的流通於各天線導線的電流値相同，電場強度 均一化效果很高。但是，如果使8條天線導線由每隔1條 的4條長度相同的兩組構成，便可各錯開90°分別配置完全 相同的成對天線導線，因此天線導線的配置成對稱，可獲 得電場強度均一化效果。 如以上所述，可以防止電漿密度的不均一，及電容耦 合成分造成的電漿密度的降低，縱使基板G是一邊1 m以 上的超大型基板，仍可藉更高密度的電漿進行更均一的電 漿蝕刻處理。 如以上所述實施蝕刻處理後，停止從高頻電源1 5及29 施加高頻電力，將處理室4內的壓力昇高到規定的壓力， 成打開閘閥27的狀態，經由運入運出口 27a從處理室4內 將基板G運出到未圖示的負載鎖定室，而結束基板G的蝕 刻處理。 其次，說明高頻天線的其他例子。 第4圖是表示高頻天線的其他例子的構造平面圖。此 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁)-18- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 589927 A7 _ B7_ V. Description of the invention (Impedance is reduced, which reduces the antenna potential. Also, the high-frequency antenna 13 is separated from the dielectric wall 2 by the spacer 13a Therefore, the capacitive coupling between the high-frequency antenna 13 and the plasma can also be reduced by this. Moreover, the separation distance at this time can depend on the frequency, output of the high-frequency power, and the desired plasma density 'at 50 mm. The following ranges are appropriately set. Furthermore, since the antenna wires 45, 46, 47, 48, 49, 50, 51, 52 are all the same length, and the capacitance of the capacitors 18 connected to each antenna wire is the same, The current 値 of each antenna wire is the same, and the electric field intensity uniformization effect is very high. However, if 8 antenna wires are composed of two groups of 4 with the same length every other, the antenna wires can be staggered by 90 ° and arranged exactly the same. The antenna wires are arranged in pairs, so the antenna wires are symmetrically arranged to obtain the uniformity of the electric field strength. As described above, it is possible to prevent uneven plasma density and decrease in plasma density caused by the capacitive coupling component. Even if the substrate G is a very large substrate with a side of more than 1 m, a more uniform plasma etching process can still be performed by a higher density plasma. After the etching process is performed as described above, the high frequency power supply 15 and 29 are stopped. High-frequency power is applied to raise the pressure in the processing chamber 4 to a predetermined pressure, and the gate valve 27 is opened, and the substrate G is transported out of the processing chamber 4 to the load lock chamber (not shown) through the loading and unloading outlet 27a. Then, the etching process of the substrate G is finished. Next, another example of the high-frequency antenna will be described. FIG. 4 is a plan view showing the structure of another example of the high-frequency antenna. This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297) Mm) (Please read the notes on the back before filling in this page)
-19 - 589927 A7 B7__ 五、發明説明（1令 高頻天線13,是具有與第2圖的高頻天線13的供電部41、 42、43、44同樣配設的4個供電部41’、42,、43’、44’， 從此等供電部分別各延伸1條天線導線的4重化天線。具 體上是，從供電部41’延伸出天線導線45’ ’從供電部42’ 延伸出天線導線47’，從供電部43’延伸出天線導線49’ ’ 從供電部44’延伸出天線導線51’。 此等天線導線4 5 ’、4 7 ’、4 9 ’、5 Γ分別具有第1直線部 45a，、47a，、49a，、51a，，第 2 直線部 45b，、47b，、49b，、 5 lb，，第 3 直線部 45c’、47c’、49c’、51c’，第 4 直線部 45d，、47d’、49d’、5 1d’，此等天線導線 45’、47’、49’、 51，除了在第3直線部45c’、47c’、49c’、51c’裝設有電容 器19以外，與第2圖的天線導線45、47、49、51具有相 同的構造及配置。 因此，此高頻天線13’與第2圖的高頻天線13同樣， 在4個供電部41’、42’、43’、44’間，不存在有天線導線的 中心部分60’的外側部分，形成有，配置天線導線45’、 47’、49’、51’的第 1 直線部 45a’、47a’、49a’、51a’及第 2 直線部45b’、47b’、49b’、5 lb’的天線導線緊密存在的略呈 正方形的中央部61’，配置第4直線部45d’、47d’、 49d’、5 Id’的天線導線緊密存在的略呈正方形的周緣部 62’，在中央部61’與周緣部62’之間形成有，配置第3直線 部45c’、47c’、49c’、5 1c’的天線導線疏鬆存在的中間部 63、 天線導線45’、47’、49’、5 1’的長度均相同，且連接在 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閲讀背面之注意事項再填寫本頁) _裝·-19-589927 A7 B7__ V. Description of the Invention (1) The high-frequency antenna 13 has four power-supply sections 41 ', 41', 42, 43, 44 arranged in the same manner as the power-supply sections 41, 42, 43, 44 of the high-frequency antenna 13 in Fig. 2. 42, 43, 43 ', 44', from these power supply units, each of them is a quadruple antenna that extends one antenna wire. Specifically, the antenna wire 45 'is extended from the power supply unit 41', and the antenna is extended from the power supply unit 42 '. The lead 47 'extends the antenna lead 49' from the power supply portion 43 'and the antenna lead 51' extends from the power supply portion 44 '. These antenna leads 4 5', 4 7 ', 4 9', 5 Γ each have a first Straight part 45a, 47a, 49a, 51a, 2nd straight part 45b, 47b, 49b, 5 lb, 3rd straight part 45c ', 47c', 49c ', 51c', 4th straight 45d, 47d ', 49d', 5 1d '. These antenna wires 45', 47 ', 49', 51 are provided with a capacitor in addition to the third straight portion 45c ', 47c', 49c ', 51c'. Except for 19, it has the same structure and arrangement as the antenna wires 45, 47, 49, and 51 of Fig. 2. Therefore, this high-frequency antenna 13 'and the high-frequency antenna 13 of Fig. 2 Similarly, between the four power supply sections 41 ', 42', 43 ', and 44', there is no outer portion of the central portion 60 'of the antenna wire, and the antenna wires 45', 47 ', 49', and 51 are formed. The antenna wires of the first straight portion 45a ', 47a', 49a ', and 51a' of the first straight portion 45b ', 47b', 49b ', and 5 lb' are closely arranged, and a slightly square central portion 61 'is arranged. The fourth straight line portions 45d ', 47d', 49d ', and 5 Id' are closely spaced by a slightly square peripheral edge portion 62 ', formed between the central portion 61' and the peripheral edge portion 62 ', and a third straight line is arranged. The antenna wires 45c ', 47c', 49c ', and 5 1c' are loose. The intermediate section 63, antenna wires 45 ', 47', 49 ', and 5 1' have the same length, and are connected to this paper. Applicable to China National Standard (CNS) A4 Specification (210X 297mm) (Please read the precautions on the back before filling this page) _Installation ·
、1T 經濟部智慧財產局員工消费合作社印製 -20- 589927 A7 B7 五、發明説明（ 各天線的終端電容器1 8及設在第3直線部的電容器1 9分 別具有相同的電容量，因此，流通各天線的電流値相等。 (請先閲讀背面之注意事項再填寫本頁) 如此，第4圖的高頻天線1 3 ’也與第2圖的高頻天線同 樣，形成有將天線導線緊密配置的中央部6 Γ及周緣部 62’，將天線導線疏鬆配置的中間部63 ’，構成爲天線導線 緊密存在的部分與天線導線疏鬆存在的部分交互存在，且 在對應供電部分的中心部分60’不存在有天線導線，因此， 縱使基板G是超大型基板，一邊長度1 m以上，也不會發 生因電場分布的偏移致使電漿密度不均一，及電容耦合成 分造成的電漿密度的降低。 同時，高頻天線13’是，從供電構件分出4條天線導線 的多重化天線，因此較之1條天線導線時，可以將電感降 低到1 / 4，並降低天線阻抗。因此，可以有效降低天線電 位，藉此也可以使其不容易發生電漿密度的不均一，或電 容耦合成分的增加。 經濟部智慧財產局員工消费合作社印製 在天線導線45’、47’、49’、51’的終端部分及第3直線 部，分別在各天線導線串聯有電容器18及電容器19，藉此 也可以降低天線阻抗，可以有效降低天線電位。再者，此 高頻天線13’是4重化天線，因此較之第2圖的8重化的高 頻天線，本質上降低天線阻抗的效果較小，但因各天線導 線串聯有兩個電容器1 8、1 9，因此可以獲得天線阻抗的減 低效果，及在中途降低天線電位的效果，可以獲得接近第2 圖的高頻天線1 3的效果。這時，如果令電容器1 9位於各 天線導線的長度中心，可以進一步提高上述效果。 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X 297公釐） -21 - 589927 A7 _B7___ 五、發明説明（1$ (請先閱讀背面之注意事項再填寫本頁) 再者，本發明不限定如上述實施形態，可以有各種變 形。例如，上述實施形態的高頻天線是第2圖所示的態 樣，但不限定如此，只要將天線導線形成疏密藉此使配置 被處理基板部分的電場均一即可。例如，第2圖的例子是 設有4個供電部，但3個以下或5個以上均可以，而從各 供電部延伸的天線數不限定爲1條或2條，3條（天線的總 數是1 2條）以上也可以。同時，各天線導線是加以彎曲使 其形成正方形，但不限定如此，可依基板的形狀等彎曲成 包括曲線的其他形狀。天線導線的數目愈多，阻抗的降低 效果愈大，但多重化提高，天線的配置會困難，且有電容 耦合成分容易增加的傾向，因此，從不會發生這種不妥， 能有效發揮阻抗降低效果的觀點來講，第2圖所示的8重 天線最理想。 經濟部智慧財產局員工消费合作社印製 上述實施形態是令整個高頻天線以相同距離離開介電 體壁，但也可以如第5圖所示，中央部分與上述介電體壁 的距離較周緣部分與上述介電體壁的距離大。藉此，天線 的電位最高的供電部近旁部分離開介電體壁較遠，可以有 效減低電容耦合成分。同時，也可以以同樣的理由，僅令 天線的中央部分離開。如果其他對策已使電容耦合充分降 低，也可以不使天線離開介電體壁。 上述實施形態是在各天線導線分別配設1個或兩個電 容器，但也可以3個以上。而配設電容器的位置也不限定 如上述實施形態。 而且，上述實施形態是表示將本發明應用在蝕刻裝置 本紙張尺度適用中國國家標準（CNS ) Α4規格（210><297公釐） -22- 589927 A7 B7 五、發明説明（1令 (請先閱讀背面之注意事項再填寫本頁) 的例子，但不限定爲蝕刻裝置，也可以應用在濺射或CVD 成膜等的其他電漿處理裝置。而處理基板是使用LCD基 板，但本發明並不限定如此，處理半導體晶圓等其他基板 時也可以應用。 【發明的效果】 如以上所說明，依據本發明時，因爲是使配置成略呈 平面的高頻天線，具有天線導線的存在密度成爲疏鬆的部 分及成爲緊密的部分，且對應供電部分的中心部分沒有天 線存在，使電容耦合成分不會增加，因此，縱然是大型基 板也不會因電容耦合成分使電漿密度降低，及因電場分布 的偏移使電漿密度產不均一，能夠以更高密度的電漿進行 均一的電漿處理。 【圖式的簡單說明】 第1圖是表示本發明一實施形態的感應耦合電漿蝕刻 裝置的截面圖。 經濟部智慧財產局員工消費合作社印製 第2圖是表示設在第1圖所示裝置的高頻天線的構造 的平面圖。 第3圖是第2圖的高頻天線的直下位置的電子密度分 布圖 第4圖是表示高頻天線的其他例子的構造的平面圖。 第5圖是表示高頻天線的其他配置狀態的截面圖。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐〉 -23- 589927 A7 B7 五、發明説明（2〇 1 ..........本體容器 2 ..........介電體壁 (請先閱讀背面之注意事項再填寫本頁) 3 ..........天線室 4 ..........處理室 13........高頻天線 15 ........高頻電源 16 ........供電構件 20........處理氣體供應系統 22........感受器 30-.......排氣裝置 41、42、43、44..........供電部 45、46、47、48、49、50、51、52..........天線導線 45a、 46a、 47a、 48a、 49a、 50a、 51a、52a..........第l直線部 45b ' 46b 、 47b 、 48b 、 49b 、 50b ' 51b、52b..........第2直線部 45c 、 46c 、 47c 、 48c 、 49c 、 50c 、 經濟部智慧財產局員工消費合作社印製 51c、52c..........第3直線部 45d 、 46d 、 47d 、 47c 、 49d 、 50d > 51d、52d..........第4直線部 60 ..........中心部分 61 ..........中央部 6 2..........周緣部 6 3..........中間部。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -24-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs of 1T-20-589927 A7 B7 V. Description of the Invention (The terminal capacitor 18 of each antenna and the capacitor 19 provided on the third straight line have the same capacitance, so, The currents flowing through the antennas are equal. (Please read the precautions on the back before filling this page.) In this way, the high-frequency antenna 1 3 ′ of FIG. 4 is similar to the high-frequency antenna of FIG. The central portion 6 ′ and the peripheral portion 62 ′ are arranged, and the intermediate portion 63 ′ where the antenna wires are loosely arranged is configured such that a closely existing portion of the antenna wires and a loosely existing portion of the antenna wires exist alternately, and the central portion 60 of the corresponding power supply portion exists. 'There is no antenna wire. Therefore, even if the substrate G is a very large substrate, the length of one side is 1 m or more, the plasma density will not be uneven due to the deviation of the electric field distribution, and the plasma density caused by the capacitive coupling components will not occur. At the same time, the high-frequency antenna 13 'is a multiplexed antenna in which four antenna wires are separated from the power supply member, so the inductance can be reduced compared to one antenna wire. To 1/4, and reduce the antenna impedance. Therefore, the antenna potential can be effectively reduced, which can also make it less prone to uneven plasma density or increased capacitive coupling components. Capacitors are located at the terminal portions of the antenna wires 45 ', 47', 49 ', and 51' and the third straight portion. A capacitor 18 and a capacitor 19 are connected in series to each antenna wire, thereby reducing the antenna impedance and effectively reducing the antenna potential. In addition, the high-frequency antenna 13 'is a quadruple antenna, so compared with the 8-fold high-frequency antenna of FIG. 2, the effect of reducing the antenna impedance is substantially smaller, but two antenna wires are connected in series. The capacitors 18 and 19 can obtain the effect of reducing the antenna impedance and the effect of lowering the antenna potential midway, and can obtain the effect of the high-frequency antenna 1 3 close to Figure 2. At this time, if the capacitor 19 is located at each antenna The center of the length of the wire can further improve the above effect. This paper size is applicable to China National Standard (CNS) A4 (210X 297 mm) -21-589927 A7 _B7___ V. Explanatory note (1 $ (please read the precautions on the back before filling out this page) Furthermore, the present invention is not limited to the above embodiment, and can be variously modified. For example, the high frequency antenna of the above embodiment is shown in FIG. 2 It is not limited to this, as long as the antenna wires are formed densely so as to make the electric field in the portion of the substrate to be processed uniform. For example, the example in FIG. 2 is provided with four power supply sections, but three or less Five or more are possible, and the number of antennas extending from each power supply is not limited to one or two, and three (the total number of antennas is 12) or more. At the same time, each antenna wire is bent to form The square is not limited to this, and may be bent into other shapes including a curve according to the shape of the substrate and the like. The larger the number of antenna wires, the greater the effect of reducing the impedance, but the increase in multiplexing will make the configuration of the antenna difficult and the capacitive coupling component tends to increase easily. Therefore, this kind of fault will never occur, and the impedance can be effectively exerted. From the viewpoint of reducing the effect, the 8-fold antenna shown in Fig. 2 is the most ideal. The above-mentioned embodiment is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs so that the entire high-frequency antenna leaves the dielectric wall at the same distance. However, as shown in FIG. 5, the distance between the central portion and the dielectric wall is more peripheral The distance between the part and the dielectric wall is large. Thereby, the vicinity of the power supply part with the highest potential of the antenna is far away from the dielectric wall, and the capacitive coupling component can be effectively reduced. At the same time, it is also possible to leave only the central part of the antenna for the same reason. If other measures have sufficiently reduced the capacitive coupling, the antenna may not be removed from the dielectric wall. In the above embodiment, one or two capacitors are provided for each antenna wire, but three or more capacitors may be used. In addition, the position where the capacitor is arranged is not limited as in the above embodiment. Moreover, the above-mentioned embodiment indicates that the present invention is applied to an etching device. The paper size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210 > < 297 mm) -22- 589927 A7 B7 5. Description of the invention (1 order (please Read the precautions on the back before filling this page), but it is not limited to an etching device, but can also be applied to other plasma processing devices such as sputtering or CVD film formation. The LCD substrate is used for the processing substrate, but the present invention It is not limited to this, and can also be applied when processing other substrates such as semiconductor wafers. [Effects of the Invention] As described above, according to the present invention, the antenna wire is provided because the high-frequency antenna is arranged in a substantially flat surface. The density becomes a loose part and a tight part, and there is no antenna in the center part corresponding to the power supply part, so that the capacitive coupling component will not increase, so even a large substrate will not reduce the plasma density due to the capacitive coupling component, and Due to the deviation of the electric field distribution, the plasma density is not uniform, and a uniform plasma treatment can be performed with a higher density plasma. [Description] Fig. 1 is a cross-sectional view showing an inductively coupled plasma etching apparatus according to an embodiment of the present invention. Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs. A plan view of the structure of the antenna. Fig. 3 is an electron density distribution diagram of the high-frequency antenna shown in Fig. 2. Fig. 4 is a plan view showing the structure of another example of the high-frequency antenna. Sectional views of other configuration states. This paper size applies to China National Standard (CNS) A4 (210X297 mm) -23- 589927 A7 B7 V. Description of the invention (201 ... 2 .......... Dielectric body wall (Please read the precautions on the back before filling this page) 3 .......... Antenna room 4 ........ ..Processing room 13 ........ High-frequency antenna 15 ........ High-frequency power supply 16 ........ Power supply member 20 ........ Processing gas Supply system 22 ........ Sensors 30 -......... Exhaust devices 41, 42, 43, 44 ......... Power supply units 45, 46, 47, 48 , 49, 50, 51, 52 ......... antenna wires 45a, 46a, 47a, 48a, 49a, 50a, 51 a, 52a ......... The first straight line portion 45b '46b, 47b, 48b, 49b, 50b' 51b, 52b ......... the second straight line portion 45c, 46c, 47c, 48c, 49c, 50c, 51c, 52c printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ... The third straight section 45d, 46d, 47d, 47c, 49d, 50d > 51d, 52d .......... 4th straight part 60 .......... Central part 61 .......... Central part 6 2 ....... ... peripheral part 6 3 .......... middle part. This paper size applies to China National Standard (CNS) A4 (210X297 mm) -24-