CN103247510B - Inductively coupled plasma processing method and inductively coupled plasma processing apparatus - Google Patents

Abstract

By performing inductively coupled plasma processing with the desired processing profile. The first treatment and the second treatment are carried out at different times by using an inductively coupled plasma processing apparatus equipped with a high-frequency antenna, wherein the high-frequency antenna has a supply A helical outer antenna that forms an outer induced electric field with high-frequency power, and a helical inner antenna that is concentrically arranged inside the outer antenna and supplied with high-frequency power to form an inner induced electric field, the first process In order to make a relatively large current flow in the inner antenna, local plasma is generated by using the inner induced electric field formed in the part corresponding to the inner antenna, and the second treatment is to make a relatively large current flow in the outer antenna. The electric current of the current value is processed by generating localized plasma by the outer induced electric field formed in the portion corresponding to the outer antenna.

Description

Inductively coupled plasma processing method and inductively coupled plasma processing device

technical field

The present invention relates to an inductively coupled plasma processing method and an inductively coupled plasma processing apparatus for performing inductively coupled (inductively coupled) plasma processing on a substrate to be processed, such as a glass substrate for flat panel display (FPD: Flat Panel Display) manufacturing.

Background technique

In the manufacturing process of a flat panel display (FPD) such as a liquid crystal display (LCD: Liquid Crystal Display), there is a process of performing plasma etching, film formation, and other plasma processing on a glass substrate. For bulk processing, various plasma processing apparatuses such as plasma etching apparatuses and plasma CVD apparatuses can be used. Currently, capacitively coupled plasma processing devices are often used as plasma processing devices, but recently, Inductively Coupled Plasma (ICP) processing devices have the advantage of being able to obtain high-density plasma at a high vacuum degree. High profile.

In an inductively coupled plasma processing apparatus, a high-frequency antenna is arranged above a dielectric window constituting a top wall of a processing container in which a substrate to be processed is accommodated, and the high-frequency antenna is supplied by supplying a processing gas into the container and The high-frequency power forms an induced electric field in the processing container through the dielectric window, and inductively coupled plasma is generated by the induced electric field, and predetermined plasma processing is performed on the substrate to be processed by using the inductively coupled plasma. As a high-frequency antenna, a loop antenna formed in a spiral shape is often used.

In an inductively coupled plasma processing apparatus using a planar loop antenna, plasma is generated in the space directly below the planar antenna in the processing container, but at this time, depending on the electric field intensity of the induced electric field at each position directly below the antenna , has the distribution of high plasma density areas and low plasma density areas, therefore, the pattern shape of the planar loop antenna becomes an important factor in determining the distribution of plasma density, and the induced electric field can be made uniform by adjusting the density of the planar loop antenna , generating a homogeneous plasma.

Therefore, the proposal has the following technology: arrange the antenna unit of two loop antennas having an inner part and an outer part at intervals in the radial direction, adjust their impedance, independently control the current value of these two loop antenna parts, and control The superposition of the density distribution formed by the diffusion of the plasma generated by each loop antenna part controls the overall distribution density of the inductively coupled plasma (Patent Document 1).

prior art literature

patent documents

Patent Document 1: Japanese Patent Laid-Open No. 2007-311182

Contents of the invention

The problem the invention seeks to solve

However, even in the inductively coupled plasma treatment using such an antenna unit having two loop antennas, the inner part and the outer part, when the high-voltage condition of 100 mTorr or more is carried out, the plasma is difficult to spread, so it is easy to locally concentrate on the In a position where plasma is easily maintained regardless of the arrangement of the above-mentioned two loop antennas, by adjusting the antenna current, it may be difficult to maintain plasma with a desired density distribution on the entire substrate, and a desired process distribution cannot be obtained. Typically a uniform treatment distribution is not obtained.

In addition, even if such a high voltage condition is not used, even if the current values of the two loop antennas are independently controlled, it may be difficult to obtain a desired plasma density distribution due to mutual influence of plasmas generated by the respective antennas. Such a problem is not limited to the case where there are two loop antennas in Patent Document 1, but generally occurs when there are a plurality of helical antennas.

The present invention has been made in view of such a situation, and its object is to provide an inductively coupled plasma that can perform inductively coupled plasma processing with a desired processing distribution when inductively coupled plasma processing is performed using a plurality of helical antennas. Processing method and inductively coupled plasma processing apparatus.

Solution to the problem

In order to solve the above-mentioned problems, the first technical solution of the present invention is to provide an inductively coupled plasma processing method, which is an inductively coupled plasma processing method for performing inductively coupled plasma processing on a substrate using an inductively coupled plasma processing apparatus. The above-mentioned inductively coupled plasma processing apparatus includes: a processing chamber for accommodating a substrate and subjecting it to plasma processing; a mounting table for placing a substrate in the processing chamber; and a processing gas supply system for supplying a processing gas into the processing chamber; An exhaust system for exhausting the above-mentioned processing chamber; an antenna unit having a high-frequency antenna for generating inductively coupled plasma disposed in the above-mentioned processing chamber on a plane corresponding to the substrate; A high-frequency power supply member for high-frequency power, the above-mentioned high-frequency antenna has: an outer antenna formed in a helical shape that is supplied with high-frequency power to form an outer induced electric field; The helical inner antenna that forms the inner induced electric field by high-frequency power. The above-mentioned inductively coupled plasma processing method implements the first treatment and the second treatment at different times, so that the desired treatment can be obtained on the substrate at the end of the treatment. distribution, wherein the first processing is to use a current with a relatively large current value flowing in the inner antenna in a portion corresponding to the inner antenna in the comparison of the currents flowing in the inner antenna and the outer antenna respectively. The formed inner induced electric field generates localized plasma for processing, and the second processing is to make a relatively larger current value flow in the outer antenna in comparison of the currents respectively flowing in the inner antenna and the outer antenna. The electric current is processed by generating localized plasma by the above-mentioned outside induced electric field formed in the portion corresponding to the above-mentioned outside antenna.

In the above-mentioned first technical solution, the above-mentioned antenna unit is provided with a high-frequency power supply connected to the high-frequency power supply for feeding the above-mentioned inner antenna and the above-mentioned outer antenna, and has a power supply path from the matching unit to the above-mentioned inner antenna and the above-mentioned outer antenna. A power feeding unit is formed with an inner antenna circuit and an outer antenna circuit including each antenna and each power feeding unit, and has an impedance adjustment member for adjusting the impedance of at least one of the inner antenna circuit and the outer antenna circuit. , thereby adjusting the current value of each of the antennas, and adjusting the current value for generating the local plasma by the impedance adjusting member. In this case, the first processing can be performed by setting the current value of the inner current flowing through the inner antenna as a relatively large first current value and the current value of the outer current flowing through the outer antenna as a relatively small value. The above-mentioned second processing can be carried out by making the current value of the outside current flowing in the above-mentioned outside antenna a relatively large third current value, and the current value of the inside current flowing in the above-mentioned inside antenna as A fourth current value of a relatively smaller value is performed. The above-mentioned first processing and the above-mentioned second processing are performed periodically.

The current value of the inner current supplied to the inner antenna and the current value of the outer current supplied to the outer antenna can be independently changed, and the current value of the inner current can be adjusted within the first step for generating the localized plasma. The current value and the fourth current value smaller than the first current value are changed in a predetermined cycle, and the current value of the outer current can be set between the third current value for generating the local plasma and the third current value lower than the third current value. The second current value with a small current value changes at the above-mentioned predetermined cycle and in a phase different from the above-mentioned inside current. In this case, the phase difference between the inner current and the outer current can be a half cycle. In addition, the inner current and the outer current are supplied in pulse form.

The second current value and the fourth current value may each be a value so small that no inductively coupled plasma is generated in the outer antenna and the inner antenna, or 0.

The above-mentioned first processing period and the above-mentioned second processing period are appropriately set according to the content of processing and the processing distribution to be obtained. In this case, the first processing period and the second processing period can be set to be the same.

The current value for generating localized plasma in the first process and the current value for generating localized plasma in the second process can be appropriately set according to the content of the process and the desired process profile. In this case, the current value for generating local plasma in the first process and the current value for generating local plasma in the second process can be set to be the same.

The second technical solution of the present invention is to provide an inductively coupled plasma processing method, which is an inductively coupled plasma processing method for performing inductively coupled plasma processing on a substrate using an inductively coupled plasma processing device. The method is characterized in that: The inductively coupled plasma processing apparatus includes: a processing chamber for accommodating a substrate and subjecting it to plasma processing; a mounting table for placing a substrate in the processing chamber; a processing gas supply system for supplying a processing gas into the processing chamber; An exhaust system for exhausting gas; an antenna unit having a high-frequency antenna for generating inductively coupled plasma disposed on a plane corresponding to a substrate in the processing chamber; and a high-frequency antenna for supplying high-frequency power to the high-frequency antenna. In the power supply means, the high-frequency antenna has a plurality of helical antennas that are supplied with high-frequency power to form an induced electric field, and different antennas are processed multiple times at different times, so that the substrate can be obtained at the end of the processing. Desired processing distribution, the processing causes a relatively large current value to flow in at least one of the plurality of antennas, and generates localized plasma using the induced electric field formed in a portion corresponding to the antenna.

A third technical aspect of the present invention is to provide an inductively coupled plasma processing apparatus, characterized by comprising: a processing chamber for accommodating a substrate and subjecting it to plasma processing; a mounting table for placing a substrate in the processing chamber; A processing gas supply system for supplying processing gas in the processing chamber; an exhaust system for exhausting the processing chamber; and an antenna unit having a height for generating inductively coupled plasma arranged in the processing chamber in a plane corresponding to the substrate. and a high-frequency power supply member for supplying high-frequency power to the above-mentioned high-frequency antenna, the above-mentioned high-frequency antenna has: an outer antenna formed in a helical shape that is supplied with high-frequency power to form an outer induced electric field; and the above-mentioned outer antenna The helical inner antenna which is provided concentrically on the inner side and which is supplied with high-frequency power to form an inner induced electric field further includes a control unit that performs control such that the first process and the second process are performed at different times, In order to obtain a desired processing distribution on the substrate at the time of completion of the processing, wherein the first processing is to make a relatively large current flow through the inner antenna in comparison of the currents respectively flowing through the inner antenna and the outer antenna The electric current of value is processed by using the above-mentioned inner induced electric field formed in the part corresponding to the above-mentioned inner antenna to generate local plasma. A current having a relatively large current value flowing through the outer antenna is processed by generating localized plasma by the outer induced electric field formed in a portion corresponding to the outer antenna.

The fourth technical solution of the present invention is to provide an inductively coupled plasma processing apparatus, which is characterized in that it includes: a processing chamber for accommodating a substrate and performing plasma processing thereon;

A mounting table for placing a substrate in the processing chamber; a processing gas supply system for supplying processing gas into the processing chamber; an exhaust system for exhausting the processing chamber; and an antenna unit having a ground plane corresponding to the substrate in the processing chamber a high-frequency antenna for generating inductively coupled plasma; and a high-frequency power supply member for supplying high-frequency power to the high-frequency antenna, wherein the high-frequency antenna is formed by being supplied with high-frequency power to form an induced electric field. The plurality of helical antennas further includes a control unit that controls the different antennas to perform processing multiple times at different times so that a desired processing distribution is obtained on the substrate when the processing ends. A relatively large current value flows through at least one of the plurality of antennas, and localized plasma is generated by the above-mentioned induced electric field formed in the portion corresponding to the antenna.

Invention effect

According to the present invention, the first treatment and the second treatment are carried out at different times so that a desired treatment distribution is obtained on the substrate at the time of the end of the treatment, wherein the first treatment is to flow a relatively large current value to the inner antenna. The current is processed by using the above-mentioned inner induced electric field formed in the part corresponding to the above-mentioned inner antenna to generate local plasma. The second treatment is to flow a relatively large current value in the above-mentioned outer antenna, and use The above-mentioned external induction electric field formed by the portion corresponding to the antenna generates localized plasma for processing, so that desired processing distribution can be obtained even when it is difficult to generate desired inductively coupled plasma on the entire substrate due to high voltage conditions or the like.

Description of drawings

FIG. 1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention.

FIG. 2 is a plan view showing an example of a high-frequency antenna of the inductively coupled plasma antenna unit used in the inductively coupled plasma processing apparatus of FIG. 1 .

FIG. 3 is a diagram showing a power supply circuit of a high-frequency antenna used in the inductively coupled plasma processing apparatus of FIG. 1 .

FIG. 4 is a diagram schematically showing that the current I _out of the outer antenna circuit and the current I _in of the inner antenna circuit can be freely varied by impedance adjustment using a variable capacitor.

Fig. 5 shows the plasma state and etching rate (E /R) relationship (a) and processing results (b) plot.

FIG. 6 is a diagram showing an example of periodically changing the current value of the inner antenna and the current value of the outer antenna.

FIG. 7 is a diagram showing an example of a waveform when the current is changed into a pulse shape.

Fig. 8 is a plan view showing a three-loop antenna as another example of a high-frequency antenna.

Fig. 9 is a plan view showing another example of the antenna used in the high-frequency antenna.

Fig. 10 is a plan view showing a first part used in the antenna of Fig. 9 .

Fig. 11 is a plan view showing a second part used in the antenna of Fig. 9 .

Fig. 12 is a plan view showing another example used in the high-frequency antenna.

Fig. 13 is a plan view showing another example of the high-frequency antenna.

Explanation of reference signs

1 main container

2 Dielectric wall (dielectric part)

3 antenna room

4 processing chamber

13 HF Antenna

13a Outer Antenna

13b Inner Antenna

14 matchers

15 high frequency power supply

16a, 16b Power supply components

19, 19a, 19b power supply line

20 Process gas supply system

21 variable capacitor

22a, 22b terminals

23 Carrying table

30 Exhaust

50 antenna elements

51 Power Supply Department

61, 62, 63, 64, 71, 72, 73, 74 Antenna wire

91a Outer Antenna Circuit

91b Inner Antenna Circuit

100 Control Department

101 User Interface

102 Storage Department

G substrate

detailed description

Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention, and FIG. 2 is a plan view showing an antenna unit used in the inductively coupled plasma processing apparatus. This device is used, for example, for etching of metal films, ITO films, oxide films, etc., and ashing of resist films when forming thin film transistors on a glass substrate for FPD. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like.

This plasma processing apparatus has a rectangular tube-shaped airtight main body container 1 made of a conductive material such as aluminum whose inner wall surface has been anodized. The main body container 1 is assembled in a detachable manner, and is electrically grounded by a ground wire 1a. The main body container 1 is divided up and down by a dielectric wall 2 into an antenna chamber 3 and a processing chamber 4 . Therefore, the dielectric wall 2 constitutes the ceiling wall of the processing chamber 4 and functions as a dielectric window through which an induced electric field formed by a high-frequency antenna described later is transmitted. The dielectric wall 2 is made of ceramics such as Al ₂ O ₃ , quartz, or the like.

A shower head frame 11 for supplying a processing gas is fitted in a lower portion of the dielectric wall 2 . The head frame 11 is provided, for example, in a cross shape, and functions as a beam that supports the dielectric wall 2 from below. In addition, the head frame 11 supporting the above-mentioned dielectric wall 2 is suspended from the ceiling of the main body container 1 by a plurality of hooks (not shown).

The shower head frame 11 is made of a conductive material, preferably a metal such as aluminum whose inner or outer surface has been anodized so as not to generate pollutants. The shower head frame 11 is electrically grounded.

A gas flow path 12 extending horizontally is formed in the shower head housing 11, and the gas flow path 12 communicates with a plurality of gas discharge holes 12a extending downward. On the other hand, a gas supply pipe 20 a is provided at the center of the upper surface of the dielectric wall 2 so as to communicate with the gas flow path 12 . The gas supply pipe 20a penetrates from the top of the main body container 1 to the outside thereof, and is connected to a gas supply system 20 including a gas supply source, a valve system, and the like. Therefore, in the plasma processing, the processing gas supplied from the processing gas supply system 20 is supplied into the shower head housing 11 through the gas supply pipe 20a, and is discharged into the processing chamber 4 through the gas discharge holes 12a on the lower surface thereof.

Between the side wall 3 a of the antenna chamber 3 and the side wall 4 a of the processing chamber 4 in the main body container 1 , a support frame 5 protruding inward is provided, and the dielectric wall 2 is placed on the support frame 5 .

An antenna unit 50 including a high-frequency (RF) antenna 13 is arranged in the antenna room 3 . The high-frequency antenna 13 is connected to a high-frequency power source 15 via a matching unit 14 . In addition, the high-frequency antenna 13 is separated from the dielectric wall 2 by a spacer 17 made of an insulating material. Then, by supplying high-frequency power with a frequency of, for example, 13.56 MHz from the high-frequency power supply 15 to the high-frequency antenna 13, an induced electric field is formed in the processing chamber 4, and the processing gas supplied from the shower head frame 11 is converted into plasma by the induced electric field. . In addition, the antenna unit 50 will be described later.

A mounting table 23 for mounting a rectangular FPD glass substrate (hereinafter abbreviated as substrate) G is provided below the processing chamber 4 so as to face the high-frequency antenna 13 via the dielectric wall 2 . The mounting base 23 is made of a conductive material such as aluminum whose surface is anodized. The substrate G placed on the mounting table 23 is sucked and held by an electrostatic chuck (not shown).

The mounting table 23 is housed in the insulator frame 24 and supported by a hollow support 25 . The support 25 maintains the bottom of the main body container 1 in an airtight state, penetrates the bottom, and is supported by a lifting mechanism (not shown) arranged outside the main body container 1. When the substrate G is carried in and out, the mounting table 23 is moved along Drive up and down. In addition, a bellows 26 that airtightly surrounds the pillar 25 is disposed between the insulator frame 24 that accommodates the stage 23 and the bottom of the main body container 1, so that even when the stage 23 moves up and down, the inside of the processing container 4 can be secured. air tightness. In addition, a loading/unloading port 27a for loading and unloading the substrate G and a gate valve 27 for opening and closing the loading/unloading port 27a are provided on the side wall 4a of the processing chamber 4 .

The mounting table 23 is connected to a high-frequency power supply 29 via a matching unit 28 via a power supply line 25 a provided in a hollow support 25 . The high-frequency power supply 29 applies high-frequency power for biasing the stage 23 during plasma processing, for example, high-frequency power with a frequency of 3.2 MHz. The high-frequency power for the bias forms a self-generated bias, and ions in the plasma generated in the processing chamber 4 are efficiently drawn to the substrate G.

Further, a temperature control mechanism including a heating device such as a ceramic heater, a refrigerant flow path, and the like for controlling the temperature of the substrate G, and a temperature sensor (both are not shown) are provided in the mounting table 23 . The pipes and wires of these mechanisms and components are all led out of the main body container 1 through the hollow support 25 .

The bottom of the processing chamber 4 is connected to an exhaust device 30 including a vacuum pump or the like via an exhaust pipe 31 . The processing chamber 4 is evacuated by the exhaust device 30 , and the inside of the processing chamber 4 is set and maintained at a predetermined vacuum atmosphere (for example, 1.33 Pa) during the plasma processing.

A cooling space (not shown) is formed on the rear side of the substrate G mounted on the mounting table 23, that is, between the surface of the mounting table 23 on which the substrate G is mounted and the rear surface of the substrate G, and a cooling space (not shown) is provided for supplying a constant pressure. He gas channel 41 of He gas as heat transfer gas. By supplying the heat transfer gas to the back side of the substrate G in this way, it is possible to avoid a temperature rise and a temperature change of the substrate G under vacuum.

Each component of the plasma processing apparatus is connected to and controlled by a control unit 100 including a microprocessor (computer). In addition, the control unit 100 is connected to a user interface 101 including a keyboard for an administrator to perform input operations such as command input to manage the plasma processing apparatus, and a keyboard for visually displaying the operating status of the plasma processing apparatus. display etc. Furthermore, the control unit 100 is connected to a storage unit 102 that stores a control program for realizing various processes executed in the plasma processing apparatus under the control of the control unit 100, and a control program for executing various processes in the plasma processing apparatus according to processing conditions. The program that executes processing in each component of the program is the processing plan. The processing plan is stored in a storage medium in the storage unit 102 . The storage medium may be a hard disk or semiconductor memory built in a computer, or may be a removable storage medium such as CDROM, DVD, or flash memory. In addition, it is also possible to appropriately transmit the scheme from another device via, for example, a dedicated line. And, according to needs, according to instructions from the user interface 101, etc., can read any processing plan from the storage unit 102, and execute it in the control unit 100, so that under the control of the control unit 100, the plasma processing apparatus performs desired processing. processing.

Next, the antenna unit 50 described above will be described in detail.

The antenna unit 50 has the high-frequency antenna 13 as described above, and also has the power supply unit 51 that supplies the high-frequency power via the matching unit 14 to the high-frequency antenna 13 .

As shown in FIG. 2 , the high-frequency antenna 13 is formed in a planar shape with a rectangular shape (rectangular shape) in outline, and its arrangement area corresponds to the rectangular substrate G. As shown in FIG.

The high-frequency antenna 13 has an outer antenna 13a constituting an outer portion and an inner antenna 13b constituting an inner portion. Both the outer antenna 13a and the inner antenna 13b are planar antennas formed in a rectangular shape. Furthermore, these outer antenna 13a and inner antenna 13b are concentrically arranged.

The outer antenna 13a constituting the outer part, as shown in FIG. )antenna. Specifically, the antenna wires 61, 62, 63, and 64 are wound at positions shifted by 90°, and the arrangement area of the antenna wires is formed in a substantially frame shape, so that the number of turns at the corners where the plasma tends to weaken is larger than that of the sides. The number of turns in the central part is large. In the illustrated example, the number of turns is three at the corner and two at the center of the side.

The inner antenna 13b constituting the inner part is, as shown in FIG. 2 , constituted by winding four antenna wires 71, 72, 73, 74 made of a conductive material, such as copper, so that the whole is formed into a helical multiple (quadruple antenna). )antenna. Specifically, the antenna wires 71, 72, 73, and 74 are wound at positions staggered by 90°, and the area where the antenna wires are arranged is formed into a substantially frame shape, so that the number of turns at the corners where the plasma tends to weaken is larger than that of the sides. The number of turns in the central part is large. In the illustrated example, the number of turns is three at the corner and two at the center of the side.

The antenna wires 61 , 62 , 63 , and 64 of the outer antenna 13 a are fed through the four central terminals 22 a and the feeder wire 69 . In addition, power is supplied to the antenna lines 71 , 72 , 73 , and 74 of the inner antenna 13 b via the four terminals 22 b arranged in the center and the feed line 79 .

Near the central part of the antenna room 3, four first power feeding members 16a for feeding power to the outer antenna 13a and four second power feeding members 16b for feeding power to the inner antenna 13b (only one of which is shown in FIG. 1 ) are provided. The lower end of each first feeding member 16a is connected to the terminal 22a of the outer antenna 13a, and the lower end of each second feeding member 16b is connected to the terminal 22b of the inner antenna 13b. The four first power supply parts 16a are connected to the power supply line 19a, and the other four second power supply parts 16b are connected to the power supply line 19b. The feeding lines 19 , 19 a , 19 b , the feeding members 16 a , 16 b , the terminals 22 a , 22 b , and the feeding lines 69 , 79 constitute the feeding section 51 of the antenna unit 50 .

The variable capacitor 21 is provided on the power supply line 19a, and the variable capacitor is not provided on the power supply line 19b. In this way, the four first feeders 16a, the feeder line 19a, the variable capacitor 21, and the outer antenna 13a constitute an outer antenna circuit, and the four second feeder members 16b, the feeder line 19b, and the inner antenna 13b constitute an inner antenna circuit.

As will be described later, by adjusting the capacitance (capacity) of the variable capacitor 21 and controlling the impedance of the outer antenna circuit, it is possible to adjust the magnitude relationship between the currents flowing in the outer antenna circuit and the inner antenna circuit. The variable capacitor 21 functions as a current control unit of the outer antenna circuit.

Impedance control of the high-frequency antenna 13 will be described with reference to FIG. 3 . FIG. 3 is a diagram showing a power supply circuit of the high-frequency antenna 13 . As shown in the figure, high-frequency power from the high-frequency power supply 15 is supplied to the outer antenna circuit 91 a and the inner antenna circuit 91 b via the matching unit 14 . Here, the outer antenna circuit 91 a includes the outer antenna 13 a and the variable capacitor 21 , and the impedance Z _out of the outer antenna circuit 91 a can be varied by adjusting the position of the variable capacitor 21 . On the other hand, the inner antenna circuit 91b includes only the inner antenna 13b, and its impedance Z _in is constant. At this time, the current I _out of the outer antenna circuit 91a and the current I _in of the inner antenna circuit 91b change according to the ratio of Z _out to Z _in , so that the current I _out and the current I _in can be changed according to the change of the impedance Z _out . . That is, by connecting the variable capacitor 21 to the outside antenna 13a, the impedance adjustment of the outside antenna circuit 91a can be performed. As shown schematically in FIG. 4, the current I _out of the outside antenna circuit 91a and the current I _in of the inside antenna circuit 91b can be freely change. Furthermore, by controlling the current flowing through the outer antenna 13a and the current flowing through the inner antenna 13b in this way, the outer induced electric field formed at the position corresponding to the outer antenna 13a and the inner induced electric field formed at the position corresponding to the inner antenna 13b can be controlled. , thereby, the plasma density distribution generated by the induced electric field can be controlled. In addition, a capacitor may also be provided in the inner antenna circuit 91b to further improve the controllability of the current.

Next, a processing operation when plasma processing, for example, plasma etching processing or plasma ashing processing is performed on the substrate G using the inductively coupled plasma processing apparatus configured as above will be described. The following processing operations are performed under the control of the control unit 100 .

First, with the gate valve 27 open, the substrate G is carried into the processing chamber 4 from the loading and unloading port 27a by a transport mechanism (not shown), placed on the mounting surface of the mounting table 23, and then is As shown in the figure) the substrate G is fixed on the mounting table 23 . Next, the processing gas supplied from the processing gas supply system 20 to the processing chamber 4 is discharged from the gas discharge hole 12a of the shower head frame 11 into the processing chamber 4, and the processing chamber 4 is exhausted by the exhaust device 30 through the exhaust pipe 31. The internal vacuum is evacuated to maintain a predetermined vacuum atmosphere in the processing chamber.

In addition, at this time, in order to avoid temperature rise and temperature change of the substrate G, He gas as a heat transfer gas is supplied to the cooling space on the back side of the substrate G through the He gas flow path 41 .

Next, a high frequency of, for example, 13.56 MHz is applied to the high frequency antenna 13 from the high frequency power supply 15 , whereby a uniform induced electric field is formed in the processing chamber 4 via the dielectric wall 2 . Using the induced electric field formed in this way, the processing gas is turned into plasma in the processing chamber 4 to generate high-density inductively coupled plasma. Using this plasma, the substrate G is subjected to plasma etching treatment or plasma ashing treatment as plasma treatment.

At this time, as described above, the high-frequency antenna 13 is configured by concentrically placing the outer antenna 13a constituting the outer portion and the inner antenna 13b constituting the inner portion at intervals, and the outer antenna 13a constituting the outer portion and the variable capacitor 21 The connection enables adjustment of the impedance of the outer antenna circuit 91a, so that the current I _out of the outer antenna circuit 91a and the current I _in of the inner antenna circuit 91b can be freely changed.

Inductively coupled plasma generates plasma in the space directly under the high-frequency antenna 13, but at this time, the plasma density at each position corresponds to the electric field strength at each position. Therefore, conventionally, by adjusting the position of the variable capacitor 21, it is controlled outside The current flowing through the antenna 13a and the current flowing through the inner antenna 13b control the electric field intensity distribution, thereby controlling the plasma density distribution.

However, when such an inductively coupled plasma treatment is performed under a high pressure condition of 100 mTorr or higher, the plasma is difficult to diffuse, so regardless of the arrangement of the antenna 13, it is easy to locally generate plasma at a position that is easy to maintain, even if the antenna current is adjusted. , sometimes it is difficult to maintain a desired density distribution on the entire substrate, and a desired process distribution, typically a uniform process distribution, cannot be obtained.

Therefore, in this embodiment, as shown in FIG. 4, the first process and the second process are performed at different times by using the current control function by the variable capacitor 21, thereby preventing the plasma generated by the outer antenna 13a from Interacting with the plasma obtained by the inner antenna 13b so that the plasma is concentrated in an unplanned position, it is possible to obtain a desired treatment distribution at the end of the treatment, typically a uniform treatment distribution, wherein the first treatment is In the magnitude relationship between the value of the current I _in flowing in the inner antenna 13b and the value of the current I _out flowing in the outer antenna 13a, the current I _in is set to a relatively large first current value, and the value of the current I _out is set to be With a relatively small second current value, a local plasma (inner plasma) is generated directly under the inner antenna 13b for processing. The second processing is the value of the current I _out flowing in the outer antenna 13a and In the magnitude relationship of the value of the flowing current I _in , the current I _out is made to be a relatively large third current value, and the current I _in is made to have a relatively small fourth current value, and are generated directly under the outer antenna 13a. Localized plasma (external plasma) for treatment.

That is, in the inductively coupled plasma processing under high-pressure conditions, even when it is difficult to maintain the plasma uniformly or with a planned distribution on the entire substrate G under the power normally supplied, it is possible to maintain the local plasma in this way, by using different The inner local plasma and the outer local plasma are generated within a certain time, and a desired processing distribution can be obtained at the time when the processing ends.

For example, as shown in FIG. 5( a), the first half of the process is the first process of generating localized plasma (internal plasma) only under the inside antenna 13b for etching, and the second half of the process is the first process of etching. The stage is the second process of generating localized plasma (external plasma) only directly under the outer antenna 13a and performing etching treatment. As a result, as shown in FIG. 5(b), a uniform Etch rate (E/R).

However, as described above, when the treatment is divided into the front and rear halves of the treatment and the local inner plasma and outer plasma are generated for treatment, a temperature difference occurs near the plasma generation part and the non-plasma generation part, and there is a difference in temperature caused by the temperature difference. The problem that components in the processing chamber 4 and the substrate G are affected. In this case, by alternately switching the first treatment with the inner plasma and the second treatment with the outer plasma in a short time, while maintaining the above effects, the influence of such a temperature difference can be suppressed. Typically, as shown in FIG. 6, by changing the position of the capacitor 21, the current value of the inner antenna 13b is periodically changed between a relatively large first current value and a relatively small fourth current value, and at the same time, the The current value of the outer antenna 13a is periodically changed between a relatively small second current value and a relatively large third current value. At this time, since the current values of the inner antenna 13b and the outer antenna 13a are changed by the change of the position of the capacitor 21, the cycle of the change of the current values of the inner antenna 13b and the outer antenna 13a is the same, and the phases are shifted by half a cycle.

In addition, the time for the first processing and the time for the second processing may be appropriately set according to the content of the processing and the processing distribution to be obtained, and these times may be the same or longer. By making these treatment times the same, uniform treatment distribution can be easily obtained. In addition, the first current value and the third current value for generating localized plasma may also be appropriately set according to the processing content and the desired processing distribution, and these values may be the same, or either value may be larger. By making these values the same, it is easy to obtain a uniform treatment distribution.

In this embodiment, the current values of the inner antenna 13b and the outer antenna 13a are controlled by adjusting the position of the capacitor 21. Therefore, the current values of the inner antenna 13b and the outer antenna 13a cannot be changed independently. However, by making the inner antenna 13b It is also possible to change the current value independently by connecting the external antenna 13a to a separate high-frequency power supply. At this time, the inner antenna 13b and the outer antenna 13a have the same cycle of changing the current, but the phase difference between the inner antenna 13b and the outer antenna 13a may be a half cycle or a cycle other than the half cycle.

In addition, when changing the current value periodically, a pulse generator or the like can be used to change the current into a pulse shape, and the waveform at this time is not particularly limited, and may be a rectangular wave as shown in FIG. A linear waveform such as a triangular wave shown in b) may be a curved waveform such as a sine wave shown in FIG. 7( c ). In either case, the maximum value of the current can be the first current value and the third current value, and the minimum value of the current can be the fourth current value or the second current value.

In addition, the relatively large first and third current values for generating localized plasma may be the same, or either current value may be greater. In addition, the relatively small fourth current value and the second current value may be 0, or may have predetermined values. When localized plasma is generated only directly under the inner antenna 13b and the outer antenna 13a, the fourth current value and the second current value must be small enough not to generate inductively coupled plasma.

In addition, for the outer antenna 13a and the inner antenna 13b, four antenna wires are respectively staggered and wound by 90° so that the whole is formed into a helical quadruple antenna, but the number of antenna wires is not limited to four, and can be any number In addition, the staggered angle is not limited to 90°.

Next, another example of the configuration of the high-frequency antenna will be described.

In the above-mentioned example, the case where two loop antennas of the outer antenna 13a and the inner antenna 13b are arranged concentrically to form a high-frequency antenna is illustrated, but three or more loop antennas may be arranged concentrically. Structure.

FIG. 8 shows a three-loop high-frequency antenna obtained by arranging three loop antennas. Here, the high-frequency antenna 113 in which the outermost antenna 113a disposed on the outermost side, the innermost antenna 113c disposed on the innermost side, and the intermediate antenna 113b disposed therebetween are concentrically provided is exemplified. For convenience, the detailed structure of each antenna is omitted in FIG. 8 , and antennas having the same structure as the above-mentioned outer antenna 13 a and inner antenna 13 b can be used.

In the case where three or more loop antennas are provided, as in the case of the above-mentioned high-frequency antenna provided with two loop antennas, high-frequency power is supplied to each loop antenna from one high-frequency power supply branch, and the A variable capacitor is arranged on the power supply line of each loop antenna to control the current of each antenna. Furthermore, current control can be performed by providing a variable capacitor on a power supply line to at least one antenna. In the case where current control is performed at different ratios for each loop antenna, which is equivalent to the case of the above-mentioned high-frequency antenna provided with two loop antennas, if the number of loop antennas is set to n, then n A capacitor is provided on the power supply line of the loop antenna of -1. Of course, it is also possible to control these currents independently by connecting each antenna to a separate high-frequency power supply.

In this case, local plasma corresponding to each antenna may be generated differently at all times, or two or more local plasmas may be generated at the same time. In addition, the value of the electric current as described above may be changed periodically in a short period of time, or the electric current may be changed in a pulse form.

Next, another example of the configuration of each antenna will be described.

In the above example, each antenna (the outer antenna 13a, the inner antenna 13b, the outermost antenna 113a, the middle antenna 113b, and the innermost antenna 113c) is configured in a loop shape, and the high-frequency power is supplied integrally. However, it is also possible to make each antenna There are a plurality of regions corresponding to different portions of the respective substrates, and high-frequency power can be independently supplied to these plurality of regions. As a result, the plasma distribution can be controlled more finely. For example, a rectangular plane corresponding to a rectangular substrate is constituted, and has a first part and a second part in which a plurality of antenna wires are wound in a spiral shape, the first part is provided at four corners of a rectangular plane formed by a plurality of antenna wires, and The four corners are joined at different positions on the rectangular plane, and the second part is set so that a plurality of antenna wires form the central part of the four sides of the rectangular plane, and the central parts of the four sides are joined at different positions on the rectangular plane, which can be The first part and the second part supply high-frequency power independently.

A specific structure will be described with reference to FIGS. 9 to 11 .

For example, as shown in FIG. 9, the outer antenna 13a constitutes a rectangular (frame-shaped) plane corresponding to the rectangular substrate G as a whole at a portion facing the dielectric wall 2 that forms an induced electric field that contributes to plasma generation, and , has a first portion 213a and a second portion 213b formed by winding a plurality of antenna wires in a helical shape. The antennas of the first portion 213a are arranged to form four corners of a rectangular-shaped plane, and join the four corners at positions different from the rectangular-shaped plane. In addition, the antenna of the second portion 213b is provided so as to form the central portion of the four sides of the rectangular plane, and joins the central portion of the four sides at a position different from the rectangular plane. Power is supplied to the first part 213a via four terminals 222a and a power supply line 269, power is supplied to the second part 213b via four terminals 222b and a power supply line 279, and high-frequency power is independently supplied to these terminals 222a and 222b.

As shown in FIG. 10, the first part 213a constitutes a quadruple antenna in which four antenna wires 261, 262, 263, and 264 are wound with 90° shifts, and forms four corners of a rectangular plane facing the dielectric wall 2. Some of the planar portions 261a, 262a, 263a, and 264a, and the portions between these planar surfaces 261a, 262a, 263a, and 264a, are formed so as to be located at positions different from the rectangular planar planes and retreat to upper positions that do not contribute to the generation of plasma. The three-dimensional parts 261b, 262b, 263b, 264b of the state. As shown in FIG. 11, the second part 213b also constitutes a quadruple antenna in which the four antenna lines 271, 272, 273, and 274 are staggered and wound by 90°, forming four rectangular planes facing the dielectric wall 2. The central portions 271a, 272a, 273a, and 274a of the side are formed so as to be located in a different position from the rectangular plane and retreat to an upper position that does not contribute to the generation of plasma. The three-dimensional parts 271b, 272b, 273b, 274b of the state.

With such a structure, it is possible to form a relatively simple multi-antenna structure in which four antenna wires are wound in a certain direction as in the above embodiment, and realize independent control of plasma distribution at the corners and the center.

In addition, the local plasma corresponding to the corner portion and the local plasma corresponding to the center portion of the side are generated at different times to form a desired treatment distribution.

In the above example, each antenna is constituted by a multiple antenna obtained by winding a plurality of antenna wires, but an antenna obtained by winding one antenna wire 181 in a helical shape as shown in FIG. 12 may also be used.

In addition, this invention is not limited to the said embodiment, Various deformation|transformation is possible. For example, in the above-mentioned embodiment, an example in which a plurality of antennas for forming an induced electric field are arranged concentrically is illustrated, but it is not limited to this, and as shown in FIG. 13 , for example, a plurality of vortex antennas 413 may be arranged in parallel. Structure. In this case, desired processing distribution can be formed by generating local plasma corresponding to each antenna 413 with a time shift.

In addition, in the above-mentioned embodiment, an example is shown in which the present invention is applied when generating inductively coupled plasma under high-pressure conditions in which plasma is difficult to spread, but it is not limited to this, as long as a plurality of antennas with different plane positions are generated at different times It is only necessary to obtain a desired processing distribution corresponding to the generated localized plasma at the end of the processing, and is not limited to high-pressure conditions where the plasma is difficult to diffuse.

Furthermore, in the above-mentioned embodiment, an example was exemplified in which a relatively large current flows through a predetermined antenna and localized plasma is generated at a position corresponding to the antenna, but it may also be generated at an antenna through which a relatively small current flows. Plasma that is weaker than localized plasma.

Furthermore, the forms of the respective antennas do not necessarily have to be the same. For example, some antennas may be multi-antennas as shown in FIG. 2 and others may be multi-antennas as shown in FIGS.

Furthermore, in the above-described embodiments, variable capacitors are used to adjust the current value of each antenna in order to adjust impedance, but other impedance adjustment means such as variable coils may also be used. In addition, in the above-mentioned embodiment, an example in which high-frequency power is distributed and supplied to each antenna from one high-frequency power supply has been described as a center, but a high-frequency power supply may be provided for each antenna as described above.

Furthermore, in the above-mentioned embodiment, the structure in which the top of the processing chamber is constituted by the dielectric wall and the antenna is arranged on the upper surface of the dielectric wall which is the top outside the processing chamber has been described. The antenna may be disposed between the plasma generation regions, or the structure may be arranged in the processing chamber.

Furthermore, in the above-mentioned embodiment, a case where the present invention is applied to etching processing or ashing processing was exemplified, but it can also be applied to other plasma processing apparatuses such as CVD film formation. Furthermore, an example in which a rectangular substrate for FPD is used as the substrate is exemplified, but it can also be applied to the case of processing other rectangular substrates such as solar cells, and can also be applied to not limited to rectangular substrates such as circular substrates such as semiconductor wafers. .

Claims (13)

1. a kind of inductively coupled plasma processing method, it is that substrate is carried out using inductive couple plasma processing device The inductively coupled plasma processing method of inductively coupled plasma process, the method is characterized in that：

The inductive couple plasma processing device possesses：

Receive substrate and implement the process chamber of corona treatment to it；

The mounting table of substrate is loaded in the process chamber；

To the treating-gas supply system for processing indoor supply processing gas；

The gas extraction system that the process chamber is exhausted；

Antenna element, its have it is described process it is indoor with substrate accordingly plane earth configuration, for generating inductively etc. The high frequency antenna of gas ions；With

High frequency power supply component to the high frequency antenna supply high frequency electric power,

The high frequency antenna at least has：It is supplied to RF power and forms outside induction field and be formed as spiral helicine outside Antenna；It is arranging with the inner concentric shape in the outboard antenna, be supplied to RF power and form inner side induction field Be formed as spiral helicine inboard antennas,

The high frequency power supply component has high frequency electric source and adapter,

The antenna element, with the power supply from the matched device of the high frequency electric source to the inboard antennas and the outboard antenna Path, is formed with the inboard antennas circuit and outboard antenna circuit including each antenna and each supply path, also has Impedance adjustment component, the impedance adjustment component is at least one of the inboard antennas circuit and the outboard antenna circuit Impedance is adjusted, so as to adjust the current value of each antenna,

The inductively coupled plasma processing method, is carried out using the impedance adjustment component to the current value of each antenna Adjustment, periodically implements the first process and second processing so that the moment terminated in process obtains to substrate in the different time Distribution is processed to desired, wherein, first is processed as the electricity that flows respectively in the inboard antennas and the outboard antenna In the comparison of stream, the electric current of the relatively large current value that makes to be flowed in the inboard antennas, using with the inboard antennas The inner side induction field that corresponding part is formed generates the plasma of local, is processed, and second processing is described In the comparison of the electric current flowed respectively in inboard antennas and the outboard antenna, make to be flowed in the outboard antenna relatively large Current value electric current, generate local using the outside induction field formed in part corresponding with the outboard antenna Plasma is processed.

2. inductively coupled plasma processing method as claimed in claim 1, it is characterised in that：

Described first current value for processing the internal current by making to be flowed in the inboard antennas is as relative larger value For generating the first current value of the plasma of the local, in the current value of outer current of outboard antenna flowing being Carry out as the second current value of relative small value,

The second processing is as relative larger value by the current value for making the outer current in outboard antenna flowing For generating the 3rd current value of the plasma of the local, in the current value of internal current of inboard antennas flowing being Carry out as the 4th current value of relative small value.

3. a kind of inductively coupled plasma processing method, it is that substrate is carried out using inductive couple plasma processing device The inductively coupled plasma processing method of inductively coupled plasma process, the method is characterized in that：

The inductive couple plasma processing device possesses：

Receive substrate and implement the process chamber of corona treatment to it；

The mounting table of substrate is loaded in the process chamber；

To the treating-gas supply system for processing indoor supply processing gas；

The gas extraction system that the process chamber is exhausted；

Antenna element, its have it is described process it is indoor with substrate accordingly plane earth configuration, for generating inductively etc. The high frequency antenna of gas ions；With

High frequency power supply component to the high frequency antenna supply high frequency electric power,

The high frequency antenna at least has：It is supplied to RF power and forms outside induction field and be formed as spiral helicine outside Antenna；It is arranging with the inner concentric shape in the outboard antenna, be supplied to RF power and form inner side induction field Be formed as spiral helicine inboard antennas,

The inductively coupled plasma processing method, in the different time the first process and second processing are periodically implemented, So that the moment terminated in process obtains desired process to substrate and is distributed, wherein, first is processed as in the inboard antennas The electric current of the relatively large current value of middle flowing, using the inner side sensing formed in part corresponding with the inboard antennas Electric field generates the plasma of local, is processed, and second processing is the relatively large electric current that flows in the outboard antenna The electric current of value, using the outside induction field formed in part corresponding with the outboard antenna plasma of local is generated Body is processed,

Process and during second processing implementing first, make current value to the internal current of inboard antennas supply and to described The current value of the outer current of outboard antenna supply can be independently varied, and make the current value of the internal current for generating Week between first current value of the plasma of the local and the 4th current value less than first current value to specify Phase changes, and makes the current value of the outer current in the 3rd current value of the plasma for being used to generate the local and than described Become with the cycle of the regulation and with the phase place different from the internal current between the second little current value of 3rd current value Change.

4. inductively coupled plasma processing method as claimed in claim 3, it is characterised in that：

Phase contrast between the internal current and the outer current is the half period.

5. the inductively coupled plasma processing method as described in claim 3 or 4, it is characterised in that：

The internal current and the outer current are supplied with pulse type.

6. the inductively coupled plasma processing method as any one of claim 2～4, it is characterised in that：

Second current value and the 4th current value is respectively the outboard antenna and the inboard antennas are not produced The value of the degree of inductively coupled plasma or 0.

7. the inductively coupled plasma processing method as any one of Claims 1 to 4, it is characterised in that：

Carried out according to the content for processing and the process to be obtained distribution during described first is processed and during the second processing Appropriate setting.

8. inductively coupled plasma processing method as claimed in claim 7, it is characterised in that：

The required time is identical with the time required during the second processing during first process.

9. the inductively coupled plasma processing method as any one of Claims 1 to 4, it is characterised in that：

Described first process in current value and the second processing for generating the plasma of local in for generating The current value of the plasma of local, is appropriately configured according to the content for processing and the process to be obtained distribution.

10. inductively coupled plasma processing method as claimed in claim 9, it is characterised in that：

Described first process in current value and the second processing for generating the plasma of local in for generating The current value of the plasma of local is identical.

A kind of 11. inductively coupled plasma processing methods, it is that substrate is entered using inductive couple plasma processing device The inductively coupled plasma processing method of row inductively coupled plasma process, the method is characterized in that：

The inductive couple plasma processing device possesses：

Receive substrate and implement the process chamber of corona treatment to it；

The mounting table of substrate is loaded in the process chamber；

To the treating-gas supply system for processing indoor supply processing gas；

The gas extraction system that interior is exhausted is processed to described；

Antenna element, its have it is described process it is indoor with substrate accordingly plane earth configuration, for generating inductively etc. The high frequency antenna of gas ions；With

High frequency power supply component to the high frequency antenna supply high frequency electric power,

The high frequency antenna have be supplied to RF power and form the spiral helicine multiple antennas that are formed as of induction field,

The high frequency power supply component has high frequency electric source and adapter,

The antenna element, with the supply path from the matched device of the high frequency electric source to the plurality of antenna, is formed with bag Multiple antenna circuits of each antenna and each supply path are included, also with impedance adjustment component, the impedance adjustment component Impedance at least one of the plurality of antenna circuit is adjusted, so as to adjust the current value of each antenna,

The current value of each antenna is adjusted using the impedance adjustment component, it is many in different time to different antennas Second periodicity ground enforcement is processed so that the moment terminated in process obtains desired process to substrate and is distributed, and the process makes Flow the electric current of relatively large current value at least one antenna of the part as the plurality of antenna, using with The induction field that the corresponding part of the antenna is formed generates the plasma of local.

12. a kind of inductive couple plasma processing devices, it is characterised in that possess：

Receive substrate and implement the process chamber of corona treatment to it；

The mounting table of substrate is loaded in the process chamber；

To the treating-gas supply system for processing indoor supply processing gas；

The gas extraction system that interior is exhausted is processed to described；

Antenna element, its have it is described process it is indoor with substrate accordingly plane earth configuration, for generating inductively etc. The high frequency antenna of gas ions；With

High frequency power supply component to the high frequency antenna supply high frequency electric power,

The high frequency antenna at least has：It is supplied to RF power and forms outside induction field and be formed as spiral helicine outside Antenna；It is arranging with the inner concentric shape in the outboard antenna, be supplied to RF power and form inner side induction field Be formed as spiral helicine inboard antennas,

The high frequency power supply component has high frequency electric source and adapter,

The antenna element, with the power supply from the matched device of the high frequency electric source to the inboard antennas and the outboard antenna Path, is formed with the inboard antennas circuit and outboard antenna circuit including each antenna and each supply path, also has Impedance adjustment component, the impedance adjustment component is at least one of the inboard antennas circuit and the outboard antenna circuit Impedance is adjusted, so as to adjust the current value of each antenna,

Control unit is also equipped with, it is controlled as follows：The current value of each antenna is carried out using the impedance adjustment component Adjustment, periodically implements the first process and second processing so that the moment terminated in process obtains to substrate in the different time Distribution is processed to desired, wherein, first is processed as the electricity that flows respectively in the inboard antennas and the outboard antenna In the comparison of stream, the electric current of the relatively large current value that makes to be flowed in the inboard antennas, using with the inboard antennas The inner side induction field that corresponding part is formed generates the plasma of local and is processed, and second processing is described interior In the comparison of the electric current flowed respectively in side antenna and the outboard antenna, make to be flowed in the outboard antenna relatively large The electric current of current value, the outside induction field generation local that utilization is formed in part corresponding with the outboard antenna etc. Gas ions are processed.

13. a kind of inductive couple plasma processing devices, it is characterised in that possess：

Receive substrate and implement the process chamber of corona treatment to it；

The mounting table of substrate is loaded in the process chamber；

To the treating-gas supply system for processing indoor supply processing gas；

The gas extraction system that interior is exhausted is processed to described；

Antenna element, its have it is described process it is indoor with substrate accordingly plane earth configuration, for generating inductively etc. The high frequency antenna of gas ions；With

High frequency power supply component to the high frequency antenna supply high frequency electric power,

The high frequency antenna have be supplied to RF power and form the spiral helicine multiple antennas that are formed as of induction field,

The high frequency power supply component has high frequency electric source and adapter,

The antenna element, with the supply path from the matched device of the high frequency electric source to the plurality of antenna, is formed with bag Multiple antenna circuits of each antenna and each supply path are included, also with impedance adjustment component, the impedance adjustment component Impedance at least one of the plurality of antenna circuit is adjusted, so as to adjust the current value of each antenna,

Control unit is also equipped with, it is controlled as follows：The current value of each antenna is carried out using the impedance adjustment component Adjustment, is repeatedly periodically carried out processing so that the moment terminated in process obtains substrate to different antennas in different time Distribution is processed to desired, the process makes the mobile phase at least one antenna of the part as the plurality of antenna Electric current to larger current value, using part corresponding with the antenna formed the induction field generate local grade from Daughter.