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TW554509B - Multi-chip module - Google Patents

Multi-chip module Download PDF

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Publication number
TW554509B
TW554509B TW90101597A TW90101597A TW554509B TW 554509 B TW554509 B TW 554509B TW 90101597 A TW90101597 A TW 90101597A TW 90101597 A TW90101597 A TW 90101597A TW 554509 B TW554509 B TW 554509B
Authority
TW
Taiwan
Prior art keywords
substrate
connection
base substrate
chip
pads
Prior art date
Application number
TW90101597A
Other languages
Chinese (zh)
Inventor
Hung-Nan Chen
Original Assignee
Advanced Semiconductor Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Eng filed Critical Advanced Semiconductor Eng
Priority to TW90101597A priority Critical patent/TW554509B/en
Application granted granted Critical
Publication of TW554509B publication Critical patent/TW554509B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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  • Wire Bonding (AREA)

Abstract

A multi-chip module comprises an upper layer chip carried on a connection substrate, a lower layer chip carried on a base substrate, and an intermediate substrate clamped between the connection substrate and the base substrate, wherein the connection substrate is installed on the base substrate. The base substrate includes a first assembling pad, a second assembling pad located on the upper surface of the base substrate, and a third assembling pad located on the lower surface of the base substrate, wherein the third assembling pad is electrically connected to the first assembling pad and the second assembling pad. The lower layer semiconductor chip is electrically connected to the first assembling pad and shielded in a first molding compound. The connection substrate has a set of connection pads formed on its lower surface. The upper layer semiconductor chip is formed on the upper surface of the connection substrate and electrically connected to the connection pad on the lower surface of the connection substrate. A second molding compound encapsulates the upper layer chip. The intermediate substrate is provided to electrically connect the connection pads on the lower surface of the connection substrate to the second set of connection pads on the upper surface of the base substrate. The intermediate substrate has an opening for accommodating the lower layer chip. The minimum vertical distance between the connection substrate and the base substrate is larger than the maximum cross-section height of the first molding compound.

Description

554509 五、發明說明(1) 【發明領域】 本發明係有關於一種多晶片封裝構造(muni-chip :d;le,MCM) ’其特別有關於-種堆疊式多晶片封裝構 【先前技術】 曰a554509 5. Description of the invention (1) [Field of the invention] The present invention relates to a multi-chip package structure (muni-chip: d; le, MCM) 'It is particularly related to-a stacked multi-chip package structure [prior art] A

由於電子產品越來越輕薄短小,使得用以保 =及提供外部電路連接的封裝構造也同㈣要輕H 丄著,小化以及高運作速度需求的增加,多晶片封 ^許夕電子裝置越來越吸引人。多晶片封裝構造可“ ::個或兩個以上之晶片(例如處理器(㈣⑶“二 憶體(mem〇ry)以及相關的邏輯單位(1〇gic))組合 fAs electronic products become thinner and thinner, the packaging structure used to protect and provide external circuit connections is also lighter, miniaturization and increased demand for high operating speeds. More and more attractive. The multi-chip package structure can be combined with ":: one or two or more chips (such as a processor (㈣⑶" memory and related logic unit (10 gic)) f

封裝構造中’纟使系統運作速度之限制最小化。此外 = 減少晶片間薛線路之長度而降低訊㈣ 最常見的多晶片封裝構造為並排式(side-by —sid 片封裝構造,其係將兩個以上之晶片彼此並排地安裝於一 ΪίΪί”要安裝面。晶片與共同基板上導電線路間之 一 係藉由線銲法(wire b〇nd ing)達成。然而該並排 式夕晶片封裝構造之缺點為封裝效率太低,因為該共同美 板之面積會隨著晶片數目的增加而增加。 土 因此,半導體業界發展出堆疊晶片封裝構造1〇〇,呈一 般係包含兩個彼此堆疊之晶片11〇、13〇 (如第一圖所示 )。該晶片110係利用一膠層112固著於一基板15〇之上^ 554509 五、發明說明(2) 面。該晶片110、130間設有一膠層132。該晶片110、130 分別利用銲線(bond i ng wi re) 11 4、1 34電性連接至該基板 150上表面之複數個線接合塾(wire-bonding pad)152。該 基板1 5 0之下表面設有複數個錫球銲墊1 5 4,其係電性連接 至該基板1 5 0之上表面之複數個線接合墊丨5 2。該每一錫球 銲墊154設有一錫球156用以與外界電性溝通。該晶片 110、130,銲線114、134以及該基板150上表面之一部分 係為一封膠體1 6 0包覆。然而,當該堆疊晶片封裝構造丨〇 Q 之彼此堆疊之晶片具有相同的尺寸時,上層晶片13〇將阻 礙下層晶片11 0的打線作業。此外,用以連接上層晶片J 3 〇 至基板150線接合墊152之銲線134,其長度及高ϋ目對地 ,加’此將提高打線作業之困難度。例如,越長及越高路 徑型態之導線’其於打線作業時,越容易斷線,及於封膠 體封裝時,越容易造成衝線(wire sweep)現象。再者,越 =越:路徑型態之導線及堆疊晶片,其需較高之封 旱度,使足以包覆導線及堆疊晶片,因而減少封 逆芝 (packaging efficiency)。 此外,將數個晶片置於一單一封裝體内另有 附加的晶片越乡,就越有可能在封、 ,。這些缺陷包含了「良裸晶< 碭。因為在將晶片線接合至基板並且么的問 :言是不容易確認晶片是否完好無缺陷。而 裝構造内有一仞曰Η θ女从μ l 戈果夕日日片封 傅xe門虿個日日片疋有缺陷的,則整個封梦错、生挑赴、士In the package structure, '纟 minimizes the speed limit of the system. In addition = reduce the length of the inter-chip Scher circuit and reduce the signal. The most common multi-chip package structure is a side-by-sid chip package structure, which installs two or more chips side by side on a single chip. Mounting surface. One of the chips and the conductive lines on the common substrate is achieved by wire bonding. However, the disadvantage of this side-by-side chip package structure is that the packaging efficiency is too low, because of the common board The area will increase with the increase in the number of wafers. Therefore, the semiconductor industry has developed a stacked wafer package structure 100, which generally includes two wafers 11 and 13 stacked on each other (as shown in the first figure). The wafer 110 is fixed on a substrate 15 with an adhesive layer 112. 554509 5. The surface of the invention (2). An adhesive layer 132 is provided between the wafers 110 and 130. The wafers 110 and 130 are respectively bonded with bonding wires. (Bond ng wi re) 11 4, 1 34 A plurality of wire-bonding pads 152 electrically connected to the upper surface of the substrate 150. A plurality of solder balls are provided on the lower surface of the substrate 150. Pads 1 5 4 which are electrically connected to A plurality of wire bonding pads on the upper surface of the substrate 150 are provided. Each of the solder ball pads 154 is provided with a solder ball 156 for electrically communicating with the outside world. The wafers 110 and 130 and the bonding wires 114 and 134 And a portion of the upper surface of the substrate 150 is covered with a colloidal 160. However, when the stacked wafer package structure 〇Q has the same stacked wafers, the upper wafer 13 will block the lower wafer 11 0. In addition, the length and height of the bonding wire 134 used to connect the upper wafer J 3 0 to the substrate 150 wire bonding pad 152 to the ground, plus' this will increase the difficulty of the wire bonding operation. For example, the more difficult The longer and higher path type of the wire is, the easier it is to break the wire during wire bonding, and the easier it is to cause wire sweep when encapsulating the gel. Furthermore, the more = the more: the more the path type Wires and stacked wafers require a high degree of dryness, which is sufficient to cover the wires and stacked wafers, thereby reducing packaging efficiency. In addition, several wafers are placed in a single package with additional The more rural the chip, the more likely it is ,,. These defects include "good bare crystals" 线. Because the wafer line is bonded to the substrate and asked: It is not easy to confirm whether the wafer is intact and free of defects. There is a 内 女 θ in the device structure. μ l Ge Guoxi's Japanese-Japanese film Feng Fu xe 虿 If one Japanese-Japanese film is defective, the entire Feng Meng is wrong, provoked, and judge

摒棄。因此,雖然多晶片封裝構造提供許多:能要JAbandon. Therefore, although the multi-chip package structure provides many:

的〇-177.ptd 第5頁 554509 五、發明說明(3) 是其產率卻往往因為缺陷機率的增加而大幅減少。 【發明概要】 因此,本發明之主要目的在於提供一種低厚度(丨⑽ prof 1 le)之多晶片封裝構造,其可克服或至少改善前述先 前技術的問題。 根據本發明之多晶片封裝構造,其主要包含一上層晶片 承載於連接基板以及一下層晶片承載於一底座基板之凹 部,其中該連接基板係安裝於該底座基板上表面。該底座 基板包含第一組接墊設於該凹部内、第二組接墊位於該底 座基板上表面的凹部外以及第三組接墊位於該底座基板下 表面,其中該第三組接墊係電性連接至第一組接墊以及第 一、、且接塾。d又於底座基板凹部之下層晶片係電性連接至古亥 第一組接墊並且包覆於一第一封膠體内。該連接基板係設 有一組連接墊於其下表面用以電性連接至該底座基板之第 二組接墊。該上層半導體晶片係設於該連接基板之 並且電性連接至該連接基板下表面之連接墊。一第二隹 體包覆a又於連接基板上表面之上層晶片。 由於該上層晶片以及下層晶片係可各自獨立完成封裝 且測試完成後,再將連接基板安裝於底座基板上表面,、因 此可解決「良裸晶(known good di e)」的問題,並且降低 多曰曰片封裝構造測試的困難度,藉此可大幅增進本發明多 晶片封裝構造之產率。此外,值得注意的是該連接^板^ 设於該底座基板上表面使得連接基板與凹部間二 距離係大於該第一封膠體之最大剖面高度〇-177.ptd Page 5 554509 V. Description of the invention (3) The yield is often greatly reduced due to the increase in the probability of defects. SUMMARY OF THE INVENTION Therefore, the main object of the present invention is to provide a multi-chip package structure with a low thickness, which can overcome or at least improve the problems of the foregoing prior art. According to the multi-chip package structure of the present invention, it mainly comprises an upper layer wafer carried on a connection substrate and a lower layer wafer carried on a recess of a base substrate, wherein the connection substrate is mounted on the upper surface of the base substrate. The base substrate includes a first group of pads located in the recess, a second group of pads located outside the recess on the upper surface of the base substrate, and a third group of pads located on the lower surface of the base substrate. It is electrically connected to the first group of pads and the first and second terminals. d is electrically connected to the first set of pads in the lower layer of the base substrate recess and is covered in a first sealant. The connection substrate is provided with a second set of connection pads on a lower surface thereof for electrical connection to the base substrate. The upper semiconductor wafer is a connection pad provided on the connection substrate and electrically connected to a lower surface of the connection substrate. A second body covering a is on the upper wafer of the connection substrate. Since the upper layer wafer and the lower layer wafer can be independently packaged and tested, the connection substrate is mounted on the upper surface of the base substrate, so the problem of "known good die" can be solved, and the number of chips can be reduced. The difficulty of the chip package structure test can greatly increase the yield of the multi-chip package structure of the present invention. In addition, it is worth noting that the connecting plate ^ is provided on the upper surface of the base substrate so that the distance between the connecting substrate and the recess is greater than the maximum cross-sectional height of the first sealant.

第6頁 POO-177.ptd 554509 五、發明說明(4) 度(low profile)之多晶片封袭構造。 為了讓本發明之上述和1 顯特徵,下文特舉本發明較:例特:配:優點能更明 作詳細說明如下。 彳貫轭例,並配合所附圖示, 【發明說明】 睛參照第二圖,其揭示根據 晶片封裝構造200,其主要台人J Λ第車又佳實施例之多 接基板220以及-下声晶上層晶片210承載於一連 邻24nfl兮广卜甘 日片23〇承載於一底座基板240之凹 ;内:底座基板24°包含第-組接墊242設於該凹部 ㈣4位㈣底座基板上表面的凹部外 接塾246位於該底貞基板下表面。彳以理解的 =數條導電線路(未示於圖中)設於底座基板24〇内 以提供第二組接墊246與第一組接墊242、第二組接墊 2 4 4間的電性連接。該連接基板2 2 〇係設有一組連接墊2 2 2 於,下表面,以及兩組連接墊224於其上表面。可以理解 的疋有複數條導電線路(未示於圖中)設於連接基板 内用以提供連接墊2 22與連接墊2 24間的電性連接。該 可由玻璃纖維強化BT (bismaleimide —triazine)樹脂,或 FR-4玻璃纖維強化環氧樹脂(fibergiass reinf〇rced epoxy resin)製成之蕊層(core iayer)形成。此外,該基 板亦可以是一陶瓷基板(ceramic substrate)。 首先’將該晶片230係利用一晶片接著膠(die attach mater ial)設於底座基板240之凹部240a,然後利用打線機 將銲線(例如金線)接合至晶片2 3 0之晶片銲墊以及第一Page 6 POO-177.ptd 554509 V. Description of the invention (4) Multi-chip sealing structure with low profile. In order to make the above-mentioned and 1 features of the present invention obvious, the present invention is enumerated below in comparison with the following examples: special features: advantages can be more clearly explained in detail as follows. Through the yoke example, and in conjunction with the attached diagram, [Explanation of the Invention] Referring to the second figure, it reveals that according to the chip package structure 200, the main board J Λ is a multi-connection substrate 220 and a lower embodiment of the preferred embodiment. Acoustic crystal upper layer wafer 210 is carried on a contiguous 24nfl Xi Guangbugan Japanese film 23 is carried on a recess of a base substrate 240; inside: the base substrate 24 ° includes a first group of pads 242 provided on the recess ㈣ 4-position base substrate The recessed portion 246 on the surface is located on the lower surface of the bottom substrate.彳 Understand = Several conductive lines (not shown) are provided in the base substrate 24 to provide electricity between the second group of pads 246, the first group of pads 242, and the second group of pads 2 4 4 Sexual connection. The connection substrate 2 2 0 is provided with a set of connection pads 2 2 2 on the lower surface, and two sets of connection pads 224 on the upper surface. It can be understood that a plurality of conductive lines (not shown in the figure) are provided in the connection substrate to provide the electrical connection between the connection pads 22 and 24. The core iayer can be made of glass fiber reinforced BT (bismaleimide-triazine) resin, or FR-4 glass fiber reinforced epoxy resin (fibergiass reinformed epoxy resin). In addition, the substrate may be a ceramic substrate. First, the wafer 230 is set in a recess 240a of the base substrate 240 using a die attach mater, and then a bonding wire (such as a gold wire) is bonded to a wafer pad of the wafer 230 by a wire bonding machine and the first

P00-177.ptd 第7頁 554509 五、發明說明(5) 組接墊242。然後,利用習知的傳遞模塑法(transfer molding)將晶片230密封於一封膠體232内。可以理解的是 封膠體232亦可利用頂團製程(gi〇b —t〇p pr〇cess)形成。 3然後,將晶片210貼在連接基板2 20之上表面,然後利用 鲜線(例如金線)接合至晶片2 1 〇之晶片銲墊以及連接墊 2 2 4。最後,將晶片21 〇密封於封膠體2 1 2内。可以理解的 是該半導體晶片210或230亦可以其他習知的技術(例如覆 晶(flip-chip)或捲帶式自動黏貼(TAB))電性連接至基板 上的導電線路。P00-177.ptd Page 7 554509 V. Description of the invention (5) Group of pads 242. Then, the wafer 230 is sealed in a piece of colloid 232 by a conventional transfer molding method. It can be understood that the encapsulant 232 can also be formed by a top mass process (giOb-Trop prcess). 3 Then, the wafer 210 is affixed to the upper surface of the connection substrate 2 20, and then bonded to the wafer pad of the wafer 2 10 and the connection pad 2 2 4 with a fresh wire (for example, a gold wire). Finally, the wafer 21 is sealed in the sealing compound 2 12. It can be understood that the semiconductor wafer 210 or 230 can also be electrically connected to the conductive line on the substrate by other conventional techniques (such as flip-chip or tape-and-tape (TAB)).

較佳地,該上層晶片210以及下層晶片230係可各自獨立 封裝並且測試完成後,再將連接基板22〇安裝於底座基板 240上表面。值得注意的是,該連接基板22〇係安設於底座 基板240上表面使得連接基板22〇與凹部24〇a間的最小垂直 距離係大於封膠體232之最大剖面高度。如第二圖所示, 該連接基板220下表面之連接墊222係藉由複數個錫球25$ 電^連接至該底座基板240上表面的第二組接墊244。反、 凊參照第三圖,其揭示根據本發明第三較佳實施例之多 晶片封裝/冓造30 0,其特徵在於該連接基板22〇下表面之連 接墊222係藉由複數個柱狀銲錫突塊26〇電性連接至該底座 基板240上表面的第二組接墊244。該柱狀銲錫突塊26〇較 佳係利用楔板印刷(s t e n c i 1 p r i n t i n g)形成。 曰π參照第四圖,其揭示根據本發明第三較佳實施例之多 曰曰片封裝構造400,其特徵在於連接基板22〇係利用一異方 隱導電|層(anis〇tr〇pic conductive adhesive filmPreferably, the upper-layer chip 210 and the lower-layer chip 230 can be individually packaged and tested, and then the connection substrate 22 is mounted on the upper surface of the base substrate 240. It is worth noting that the connecting substrate 22 is installed on the upper surface of the base substrate 240 so that the minimum vertical distance between the connecting substrate 22 and the recessed portion 24a is larger than the maximum cross-sectional height of the sealing body 232. As shown in the second figure, the connection pads 222 on the lower surface of the connection substrate 220 are electrically connected to the second group of connection pads 244 on the upper surface of the base substrate 240 through a plurality of solder balls 25 $. In contrast, referring to the third figure, it discloses a multi-chip package / molding 300 according to a third preferred embodiment of the present invention, which is characterized in that the connection pads 222 on the lower surface of the connection substrate 22 are formed by a plurality of pillars. The solder bumps 26 are electrically connected to the second set of pads 244 on the upper surface of the base substrate 240. This columnar solder bump 26 is preferably formed by wedge printing (s t en c i 1 p r i n t i n g). Refer to the fourth figure, which discloses a multi-chip package structure 400 according to a third preferred embodiment of the present invention, which is characterized in that the connection substrate 22o utilizes an anisotropic conductive layer adhesive film

554509 五、發明說明(6) (ACF)) 270接合至底座基板240上表面。該連接基板220下 表面之連接墊222設有複數個金屬突塊(metal bump) 272, 其車乂佳為係利用習知的打線技術(w i r e b 〇 n d i n g technique)形成之柱狀突塊(stud bump)。可以理解的 是’該複數個金屬突塊272亦可設於該底座基板240上表面 的第二組接墊2 4 4。該金屬突塊2 7 2係利用異方性導電膠層 2 7 0電性連接至相對應之第二組接墊2 4 4。已知適合用以形 1該異方性導電膠層270的異方性膠為一 Γζ軸異方性 膠匕’其係被填入低濃度之導電粒子27〇a,並且使得其在 xy平面不會彼此接觸因此,在z方向壓縮該異方性導電膠 層2 70將使得該金屬突塊272藉由導電粒子27吨電性連接至 相對應之第二組接墊2 4 4。 清參照第五圖,其揭示根據本發明第四較佳實施例之多 晶片封裝構造500,其特徵在於該底座基板241之下表面另 包含一凹部240b。該多晶片封裝構造5〇〇另包含一半導體 晶片280設於該凹部240b内並且電性連接至該底座基^ 下表面凹部24Gb内的第四組接墊248。可以理解的是;^^ 數條導電線路(未示於圖中)巧於處 固r J °又於底座基板241内用以提 供第四組接墊248與第三組接墊246間的電性連接。該半 體晶片2 8 0係包覆於一封膠體内。 請參照第六圖,其揭示根據本發明 晶片封裝構造6 0 0,其特徵在於且右士人甘例夕 ^ ^ ^ , 〇〇n 文在於具有一中介基板290,夾設 於该連接基板220與底座基板241b之間使得該 與底座基板241b間之最小垂直距M^ &連接土板220 取』M 1距離係大於封膠體232之最 P00-177.ptd 第9頁 554509554509 5. Description of the Invention (6) (ACF)) 270 is bonded to the upper surface of the base substrate 240. The connection pad 222 on the lower surface of the connection substrate 220 is provided with a plurality of metal bumps 272. The car bumper is preferably a stud bump formed by a conventional wire bonding technique. ). It can be understood that 'the plurality of metal bumps 272 may also be provided on the upper surface of the base substrate 240 as a second set of pads 2 4 4. The metal bump 2 72 is electrically connected to the corresponding second group of pads 2 4 4 by using an anisotropic conductive adhesive layer 2 70. It is known that the anisotropic adhesive suitable for forming the anisotropic conductive adhesive layer 270 is a Γζ-axis anisotropic adhesive, which is filled with low-concentration conductive particles 27〇a and is placed on the xy plane. They will not contact each other. Therefore, compressing the anisotropic conductive adhesive layer 2 70 in the z direction will cause the metal bump 272 to be electrically connected to the corresponding second set of pads 2 4 4 by 27 tons of conductive particles. Referring to the fifth figure, it is disclosed that a multi-chip package structure 500 according to a fourth preferred embodiment of the present invention is characterized in that the lower surface of the base substrate 241 further includes a recess 240b. The multi-chip package structure 500 further includes a semiconductor chip 280 disposed in the recessed portion 240b and electrically connected to a fourth group of pads 248 in the recessed portion 24Gb of the lower surface of the base substrate. It can be understood that; ^^ Several conductive lines (not shown in the figure) are cleverly used to fix the j r ° in the base substrate 241 to provide electricity between the fourth group of pads 248 and the third group of pads 246. Sexual connection. The half wafer 280 is coated in a colloid. Please refer to the sixth figure, which discloses a chip package structure 600 according to the present invention, which is characterized in that the right person is an example ^ ^ ^, 〇〇n The text is provided with an interposer substrate 290 sandwiched between the connection substrate 220 The minimum vertical distance between the base plate 241b and the base plate 241b M ^ & connecting soil plate 220 to take 『M 1 distance is greater than the maximum P00-177.ptd page 9 554509

大剖面高度,其中該中介基板290具有一開口用以容置該 半導體晶片2 3 0。可以理解的是,該中介基板2 9 〇係設有一 組中介接墊292於其上表面,一組中介接墊294於其下| 面’以及有複數條導電線路(未示於圖中)設 板290内用以提供中介接墊292與中介接墊294間的電性連 接。該連接基板220、底座基板241b與中介基板29〇間係 由複數個錫球250提供電性連接。此外,電性連接亦可利曰 用柱狀銲錫突塊或異方性導電膠層(Α Μ)提供。 請參照第七圖,其揭示根據本發明第六較佳實施例之多 晶片封裝構造700,其特徵在於包含一上層晶片21〇承載於 一連接基板296之凹部296a以及一下層晶片23〇承載於一底 座基板240之凹部240a。該連接基板296係設有一組連接墊 296b於其下表面之凹部296a外,以及一組連接墊296c於其 下表面之凹部296a内。可以理解的是有複數條導電線路 (未示於圖中)設於連接基板296内用以提供連接墊29讣 與連接墊296c間的電性連接。值得注意的是,該連接 296係安設於底座基板240上表面使得連接基板29 6之凹7籌 296a與底座基板240之凹部24〇a間的最小垂直距離係大於 封膠體232以及214之最大剖面高度。 根據本發明之多晶片封裝構造係可以利用錫球安裝於一 基板二例如一印刷電路板。可以理解的是,封裝構造底部 之第一組接塾246亦可先印上錫膏(s〇ider paste),再安 裝至基板。 根據本發明之多晶片封裝構造,由於該上層晶片以及下With a large cross-section height, the interposer substrate 290 has an opening for receiving the semiconductor wafer 230. It can be understood that the interposer substrate 290 is provided with a set of interposer pads 292 on its upper surface, a set of interposer pads 294 under the | surface 'and a plurality of conductive lines (not shown in the figure). The board 290 is used to provide an electrical connection between the interposer pad 292 and the interposer pad 294. The connection substrate 220, the base substrate 241b, and the interposer substrate 29 are electrically connected by a plurality of solder balls 250. In addition, the electrical connection can also be provided by a columnar solder bump or an anisotropic conductive adhesive layer (AM). Please refer to the seventh figure, which discloses a multi-chip package structure 700 according to a sixth preferred embodiment of the present invention, which is characterized in that it includes an upper-layer wafer 21 borne on a recess 296a of a connection substrate 296 and a lower-layer wafer 23 borne on A recessed portion 240 a of a base substrate 240. The connection substrate 296 is provided with a set of connection pads 296b outside the recessed portion 296a on its lower surface, and a set of connection pads 296c inside the recessed portion 296a on its lower surface. It can be understood that a plurality of conductive lines (not shown) are provided in the connection substrate 296 to provide electrical connection between the connection pad 29 讣 and the connection pad 296c. It is worth noting that the connection 296 is installed on the upper surface of the base substrate 240 so that the minimum vertical distance between the concave portion 296a of the connecting substrate 296 and the concave portion 24a of the base substrate 240 is greater than the maximum of the sealing bodies 232 and 214. Section height. The multi-chip package structure according to the present invention can be mounted on a substrate, such as a printed circuit board, using solder balls. It can be understood that the first group of connectors 246 at the bottom of the package structure can also be printed with a solder paste before being mounted on the substrate. According to the multi-chip package structure of the present invention, since the upper chip and the lower chip

554509554509

雖然本發明已以前述敍伟 _ 定本發明,任何熟習此技藝者,在不:籬=$並非用以限 範圍内,當可作各種之更動與修^脫離本發明之精神和 晶片封裝構造雖以兩層構造作^ 。例如根據本發明之多 明之多晶片封裝構造係可用以形二佳實施例,但根據本發 因此本發明之保護範圍當視後=成三層以上的封裝構造。 為準。 咐之申請專利範圍所界定者Although the present invention has been formulated with the foregoing description, anyone skilled in this art will not: the hedge = $ is not intended to be used within a limited range. Various changes and modifications can be made without departing from the spirit of the invention and the chip packaging structure. Constructed with two layers ^. For example, the multi-chip multi-chip package structure according to the present invention can be used as the second preferred embodiment. However, according to the present invention, the scope of protection of the present invention should be regarded as a package structure with three or more layers. Prevail. Commanded as defined by the scope of the patent application

554509 圖式簡單說明 【圖示說明】 第1圖·習用堆疊晶片封裝構造之刹面圖; 較佳實施例之多晶片封裝構造 第2圖:根據本發明第 之剖面圖; 第3圖:根據本發明第二較施例之多晶片 之剖面圖; 較佳實施例之多晶片封裝構造 第4圖··根據本發明第三 之剖面圖; 第5圖:根據本發明第四較佳實施例之多晶片封裝構造 之剖面圖; 第6圖··根據本發明第五較佳實施例之多晶片封裝構造 之剖面圖;及 π傅k 第7圖:根據本發明第六較佳實施例之多晶片封 之剖面圖。 、再w 【圖號說明】 100 堆疊晶片封裝構造 110 晶片 112 膠層 114 銲線 130 晶片 132 膠層 134 鲜線 150 基板 152 線接合墊 154 錫球銲墊 160 封膠體 200 多晶片封裝構造 210 晶片 212 封膠體 g554509 Brief description of the diagrams [Illustration] Figure 1 · Brake view of a conventional stacked chip package structure; Preferred embodiment of a multi-chip package structure Figure 2: Sectional view according to the present invention; Figure 3: Based on A cross-sectional view of a multi-chip package according to a second comparative embodiment of the present invention; a multi-chip package structure of a preferred embodiment. FIG. 4... According to a third cross-sectional view of the present invention; FIG. 5: a fourth preferred embodiment according to the present invention. A cross-sectional view of a multi-chip package structure; FIG. 6 ··· A cross-sectional view of a multi-chip package structure according to a fifth preferred embodiment of the present invention; and πfu k Fig. 7: a sixth preferred embodiment of the present invention Sectional view of a multi-chip package. 、 W [Illustration of drawing number] 100 stacked wafer package structure 110 wafer 112 adhesive layer 114 bonding wire 130 wafer 132 adhesive layer 134 fresh line 150 substrate 152 wire bonding pad 154 solder ball pad 160 sealing compound 200 multi-chip package structure 210 chip 212 Colloid g

POO-177.ptd 第12頁 554509 圖式簡單說明 220 連接基板 222 連接墊 224 連接墊 230 晶片 232 封膠體 240 底座基板 241 底座基板 241b 底座基板 240a 凹部 240b 凹部 242 接墊 244 接墊 246 接墊 248 接墊 250 錫球 260 柱狀銲錫突塊 270 異方性導電膠層 270a 導電粒子 272 金屬突塊 280 半導體晶片 290 中介基板 292 中介接墊 294 中介接墊 296 連接基板 2 9 6a 凹部 296b 連接墊 296c 連接墊 300 多晶片封裝構造 400 多晶片封裝構造 500 多晶片封裝構造 600 多晶片封裝構造 700 多晶片封裝構造POO-177.ptd Page 12 554509 Brief description of the diagram 220 Connection substrate 222 Connection pad 224 Connection pad 230 Chip 232 Sealant 240 Base substrate 241 Base substrate 241b Base substrate 240a Recess 240b Recess 242 Pad 244 Pad 246 Pad 248 Pad 250 Solder ball 260 Columnar solder bump 270 Anisotropic conductive adhesive layer 270a Conductive particle 272 Metal bump 280 Semiconductor wafer 290 Intermediate substrate 292 Intermediate pad 294 Intermediate pad 296 Connection substrate 2 9 6a Recess 296b Connection pad 296c Connection pad 300 multi-chip package structure 400 multi-chip package structure 500 multi-chip package structure 600 multi-chip package structure 700 multi-chip package structure

ΦΦ

POO-177.ptd 第13頁POO-177.ptd Page 13

Claims (1)

554509 lS^9〇l〇i597 六、申請專利範圍 曰 修正 該 柱狀銲:柱狀銲錫突塊性連接至該底座基板 大塊係利用模板印刷形成。 基板係經由專里利方圍第1項之多晶片封裝構造’其中該連接 板。、由/、方性導電膠層(ACF)電性連接至該底座基554509 lS ^ 9〇l〇i597 Sixth, the scope of the application for the patent is to amend the columnar welding: the columnar solder bumps are connected to the base substrate in bulk, and the large blocks are formed by stencil printing. The substrate is a multi-chip package structure according to item 1 of the patent, which is the connection board. 、、 / 、 Square conductive adhesive layer (ACF) is electrically connected to the base 第15頁Page 15
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687313B2 (en) 2002-10-08 2010-03-30 Stats Chippac Ltd. Method of fabricating a semiconductor multi package module having an inverted package stacked over ball grid array (BGA) package
US7749807B2 (en) 2003-04-04 2010-07-06 Chippac, Inc. Method of fabricating a semiconductor multipackage module including a processor and memory package assemblies

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687313B2 (en) 2002-10-08 2010-03-30 Stats Chippac Ltd. Method of fabricating a semiconductor multi package module having an inverted package stacked over ball grid array (BGA) package
US7749807B2 (en) 2003-04-04 2010-07-06 Chippac, Inc. Method of fabricating a semiconductor multipackage module including a processor and memory package assemblies

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