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TW546803B - Shaped springs and methods of fabricating and using shaped springs - Google Patents

Shaped springs and methods of fabricating and using shaped springs Download PDF

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Publication number
TW546803B
TW546803B TW090108014A TW90108014A TW546803B TW 546803 B TW546803 B TW 546803B TW 090108014 A TW090108014 A TW 090108014A TW 90108014 A TW90108014 A TW 90108014A TW 546803 B TW546803 B TW 546803B
Authority
TW
Taiwan
Prior art keywords
patent application
scope
item
element material
substrate
Prior art date
Application number
TW090108014A
Other languages
Chinese (zh)
Inventor
Gaetan L Mathieu
Benjamin N Eldridge
Stuart W Wenzel
Original Assignee
Formfactor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/547,560 external-priority patent/US6640432B1/en
Priority claimed from US09/547,561 external-priority patent/US7458816B1/en
Application filed by Formfactor Inc filed Critical Formfactor Inc
Application granted granted Critical
Publication of TW546803B publication Critical patent/TW546803B/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
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    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06755—Material aspects
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
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Abstract

An interconnection element and a method of fabricating and using an interconnect element that includes a first element material adapted to be coupled to a substrate and a second element material comprising a material having a transformable property such that upon transformation, a shape of the interconnection is modified. An example is a material that has a transformable property such that a volume of the first and/or second element material may undergo a thermal transformation from one volume to a different volume (such as a smaller volume).

Description

546803 A7 B7 五、發明説明（，） .發明背景 發明領域 ----------- ’ 一 (請知閱讀背^之注意事項再填寫本頁) 本發明相關於適合用於電子組件之間的有效連接的.互 連（接觸）元件。 相關技術的敘述 互連或接觸元件可被用來連接電子組件的裝置，或是 用來將一電子組件連接於另一電子組件。例如，互連元件 可被用來連接一積體電路晶片的二電路，或是用來連接應 用特定積體電路（ASIC)。互連元件也可被用來將積體電 路晶片連接於適合用來安裝在電腦或其他電子裝置的印刷 電路板（PCB)上的晶片封裝，或是用來將積體電路晶片直 接連接於PCB。互連元件可另外被用來將積體電路晶片連接 於例如探針卡總成的測試裝置或是其他基板來測試晶片。 一般而言，電子組件之間的互連或接觸元件可分成至 少「相當永久」及「易於拆卸」兩大類。 經濟部智慧財產局員工消費合作社印製 「相當永久」的互連元件的一例爲引線接合。一旦二 電子組件藉著將互連元件接合於每一電子組件而互相連接 ，就必須使用斷接（unbonding )處理來使組件分開。例如 在積體電路晶片或晶粒與一晶片或封裝的內引線（或引線 框指件的內引線）之間的引線接合互連元件典型上利用「 相當永久」的互連元件。 .「易於拆卸」的互連元件的一例爲在由一電子組件的 彈性插座元件例如彈簧加載的LGA插座或零插入力的插座 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 546803 A7 B7 五、發明説明（2 ) 接收的另一電子組件的剛性針腳之間的互連元件。第二類 型的「易於拆卸」的互連元件爲本身具有彈性或爲彈簧狀 或是安裝於或安裝在一彈簧或彈性介質中或之上的互連元 件。此種互連元件的一例爲探針卡組件的鎢針或微彈簧觸 點，例如在1 9 9 9年1 1月2日公告的共同讓渡的名爲「探針卡 總成的探針元件的尖端的平面化方法（Method of Planarizing Tips of Probe Elements of a Probe Card Assembly)」的美國專利第5,974,662號（FFI-P06)中所述 者。探針卡組件的互連元件典型上是被設計來在安裝有互 連元件的電子組件與第二電子組件例如測試下的半導體裝 置的端子之間實施暫時性的壓力連接。 關於彈簧互連元件，一般而言，想要有最小的接觸力 來實施對電子組件（例如對電子組件的端子）的可靠壓力 接觸。例如，可能想要有大約1 5克（包括每一端子小至2克 或2克以下以及大至150克或150克以上）的接觸（負荷）力 來對電子組件的端子實施可靠的電壓力連接。 關於彈簧互連元件的第二個有興趣的因素爲互連元件 對電子組件.的端子形成壓力連接的部份的形狀及冶金學。 例如，對於成爲彈簧互連元件的鎢針，接觸端部受元素（ 例如鎢）的冶金學限制，並且當鎢針的直徑越小時，越難 以相稱地在接觸端部處控制或建立想要的形狀。 在某些情況中，互連元件本身不具有彈性，但是是由 一彈性膜片支撐。膜片探針爲此情況的例子·，其中多個微 隆起部設置在一彈性膜片上，再次地，製造此種互連元件 本紙張尺度通用中國國家標準（CNS ) Α4規格（21〇Χ297公釐） I--------衣-- < 麵 (請先閲讀背％之注意事項再填寫本頁)546803 A7 B7 V. Description of the invention (,). Background of the invention Field of invention ----------- 'One (Please read the notes on the back ^ before filling out this page) The present invention is related to suitable for use in electronics Interconnected (contact) components that are effectively connected between components. DESCRIPTION OF RELATED ART Interconnecting or contacting elements may be used as devices for connecting electronic components or for connecting one electronic component to another electronic component. For example, interconnect components can be used to connect two circuits on an integrated circuit chip, or to connect to an application specific integrated circuit (ASIC). Interconnect components can also be used to connect integrated circuit chips to a chip package suitable for mounting on a printed circuit board (PCB) of a computer or other electronic device, or to directly connect integrated circuit chips to a PCB. . Interconnect elements may additionally be used to connect the integrated circuit wafer to a test device such as a probe card assembly or other substrate to test the wafer. Generally speaking, the interconnections or contact elements between electronic components can be divided into at least "quite permanent" and "easy to disassemble" categories. An example of "quite permanent" interconnect components printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is wire bonding. Once the two electronic components are connected to each other by joining interconnecting elements to each electronic component, an unbonding process must be used to separate the components. For example, a wire-bonded interconnect element between an integrated circuit wafer or die and an inner lead (or inner lead of a lead frame finger) of a chip or package typically utilizes a "relatively permanent" interconnect element. An example of an "easy-to-remove" interconnect element is a flexible socket element made of an electronic component such as a spring-loaded LGA socket or a zero-insertion force socket. (Centi) 546803 A7 B7 5. Description of the invention (2) The interconnection element between the rigid pins of another electronic component received. The second type of "easy-to-remove" interconnecting elements are interconnecting elements that are resilient or spring-like, or are mounted on or in a spring or elastic medium. An example of such an interconnecting element is a tungsten pin or micro spring contact of a probe card assembly, such as the probe commonly referred to as "probe card assembly" announced on November 2, 1999. Method of Planarizing Tips of Probe Elements of a Probe Card Assembly "described in US Patent No. 5,974,662 (FFI-P06). The interconnecting elements of the probe card assembly are typically designed to make a temporary pressure connection between an electronic component on which the interconnecting element is mounted and a second electronic component such as a terminal of a semiconductor device under test. Regarding spring interconnecting elements, in general, it is desirable to have a minimum contact force to implement a reliable pressure contact to an electronic component (for example, to a terminal of the electronic component). For example, you may want a contact (load) force of approximately 15 grams (including as little as 2 grams or less per terminal and as large as 150 grams or more per terminal) to apply a reliable voltage force to the terminals of an electronic component connection. A second factor of interest with regard to spring interconnecting elements is the shape and metallurgy of the portions where the interconnecting elements make pressure connections to the terminals of the electronic assembly. For example, for tungsten pins that become spring interconnect elements, the contact end is limited by the metallurgy of the element (such as tungsten), and the smaller the diameter of the tungsten pin, the more difficult it is to proportionately control or establish the desired at the contact end shape. In some cases, the interconnecting element is not elastic itself, but is supported by an elastic diaphragm. The membrane probe is an example of this case, in which a plurality of micro-protrusions are provided on an elastic membrane, and once again, this interconnect element is manufactured in accordance with the Chinese National Standard (CNS) A4 specification (21〇 × 297). 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、1T 經濟部智慧財產局員工消費合作杜印製 546803 A7 B7 五、發明説明（3 ) 所必須的技術限制了對於互連元件的接觸部份的形狀及冶 金學的設計選擇。 (請七閲讀背面之注意事項再填寫本頁) 共同讓渡的的1 9 9 3年1 1月1 6日申請的美國專利申請案 序號第08/ 1 5 2,8 1 2號（已於1 995年12月19日獲頒爲美國專利 第5，47 6,2 1 1號）揭示製造彈簧互連元件的方法。在較佳實 施例中，對於微電子應用特別有用的這些彈簧互連元件涉 及將一撓性伸長元件（例如引線「莖（stem )」或引線「 骨架（s k e 1 e t ◦ η )」，有時稱爲引線「核心」）的一端部安 裝於在電子組件上的端子，且以一或多種材料的「殼層（ s h e 11 )」塗覆撓性元件及端子的相鄰表面。熟習此項技術 者可選擇撓性元件及殼層材料的厚度，降服強度，及彈性 模數的組合來對所得的彈簧互連元件提供令人滿意的力對 偏向的特性。核心元件的材料例子包括金。塗覆層的材料 例子包括鎳及其合金。所得的彈簧互連元件適合於用來實 施二或多個電子組件包括半導體裝置之間的壓力連接或可 拆卸的連接。 經濟部智慧財產局員工消費合作社印製 隨著電子組件的日益變小，以及電子組件上的端子之 間的間隙的日益緊密，或是節距的日益精細，越來越難以 製造適合於對電子組件的端子形成電連接的連接。1 997年2 月1 8日申請的審查中的共同讓渡的名爲「微電子接觸結構 及其製造方法（Microelectronic Contact Structure)」的美 國專利申請案序號第08/802,054號（FFI-P34)(藉著參考整 體結合於此）以及相應的在1 997年1 1月27日公告成爲W097/ 44 67 6的PCT申請案揭示經由石印技術形成彈簧互連結構的 本紙張尺度適用中國國家標準（CNS ) A4規格{ 210X 297公釐） 546803 A7 B7 五、發明説明（4 ) 方法。在一*實施例中’上述申S靑案揭不在一'犧牲基板上形 成一彈簧互連元件（包括爲一懸臂樑的彈簧互連元件）， 然後將互連元件轉移及安裝於電子組件上的端子。在此揭 示中，彈簧互連元件經由餓刻技術而形成於基板本身。在 審查中的共同讓渡的名爲「微電子彈簧接觸元件（ Microelectronic Spring Contact Elements)」的美國專利申 請案序號第08/852,1 5 2號（FFI-P35)中，彈簧互連元件的形 成在包括爲電子組件的基板的一基板上是藉著沈積及圖型 化多個掩蔽層來形成相應於彈簧互連元件所採用的形狀的 開口，在由圖型化的掩蔽層所形成的開口中沈積導電材料 ，並且移除掩蔽層來形成自由站立的彈簧互連元件。 審查中的共同讓渡的名爲「微電子接觸結構及其製造 方法(Microelectronic Contact Structures and Methods of Making Same)」的美國專利申請案序號第09/023,859號（ FFI-P047 )揭示具有基座端部（柱組件），本體部份（樑組 件），及接觸端部（尖端組件）的互連元件，以及分開地 形成每一部份且將柱部份如所想要的一起結合在電子組件 上的方法。1 、 Thanks to the consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by Du 546803 A7 B7 V. Explanation of the invention (3) The necessary technology limits the shape of the contact parts of the interconnecting elements and the design options of metallurgy. (Please read the notes on the back and fill in this page.) Commonly Assigned US Patent Application No. 08/1 5 2, 8 1 2 Issued on December 19, 995 as U.S. Patent No. 5,47 6,2 1 1) discloses a method of manufacturing a spring interconnecting element. In a preferred embodiment, these spring interconnecting elements that are particularly useful for microelectronic applications involve a flexible elongated element (such as a lead "stem" or a lead "ske 1 et ◦ η", sometimes One end of the lead is referred to as a lead (core), and is mounted on a terminal of an electronic component, and adjacent surfaces of the flexible element and the terminal are coated with a "shell (she 11)" of one or more materials. Those skilled in the art may choose the combination of the thickness of the flexible element and the shell material, the yield strength, and the elastic modulus to provide satisfactory spring-biased characteristics of the spring interconnect element. Examples of the material of the core element include gold. Examples of the material of the coating layer include nickel and its alloy. The resulting spring interconnection element is suitable for implementing a pressure connection or a detachable connection between two or more electronic components, including semiconductor devices. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs as electronic components become smaller and smaller, and the gap between terminals on electronic components becomes closer, or the pitch becomes finer, it becomes more and more difficult to manufacture suitable for electronic components. The terminals of the component form an electrically connected connection. US Patent Application Serial No. 08 / 802,054 (FFI-P34) entitled "Microelectronic Contact Structure and Its Manufacturing Method (Microelectronic Contact Structure)" during the examination of the application on February 18, 997 (Incorporated by reference in its entirety) and the corresponding PCT application, which was published as W097 / 44 67 6 on January 27, 1997, revealed that the paper standards for forming spring interconnected structures through lithographic technology are applicable to Chinese national standards ( CNS) A4 specification {210X 297 mm) 546803 A7 B7 V. Description of the invention (4) Method. In a * embodiment, the above-mentioned application is not disclosed, a spring interconnection element (including a spring interconnection element which is a cantilever beam) is formed on a sacrificial substrate, and then the interconnection element is transferred and mounted on the electronic component. Terminal. In this disclosure, the spring interconnection element is formed on the substrate itself through a lithography technique. In the co-assigned U.S. Patent Application Serial No. 08/852, 152 (FFI-P35) entitled "Microelectronic Spring Contact Elements", Formed on a substrate including a substrate for an electronic component is formed by depositing and patterning a plurality of masking layers to form openings corresponding to the shape adopted by the spring interconnect element, and is formed in the patterned masking layer. A conductive material is deposited in the opening and the masking layer is removed to form a free standing spring interconnect element. U.S. Patent Application Serial No. 09 / 023,859 (FFI-P047) named "Microelectronic Contact Structures and Methods of Making Same", commonly assigned under review, has a base end Parts (pillar assemblies), body parts (beam assemblies), and interconnecting elements that contact the ends (tip assemblies), and form each part separately and combine the pillar parts together in the electronic assembly as desired On the method.

Smhh等人的美國專利第5,613,861號（及其互補分割案 美國專利第5，8 4 8,6 8 5號）揭示形成在基板上的經光石印技 術定圖型的彈簧互連元件，其具有由彈性材料例如鉻鉬合 金或鎳锆合金形成的具有固有應力梯度的本體。應力梯度 使得本體的端部在端部從基板釋放時以弧形形狀彎曲離開 基板。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） I--------- * I (請I閲讀背#之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 546803 A7 B7 五、發明説明（5 ) 爲達成想要的本體形狀’ Smith等人必須限制美國專利 第5,6 1 3，8 6 1號中所述的互連元件的厚度。對互連元件的厚 度的限制造成對互連元件的彈簧常數k的限制（k隨著厚度 的增加而增加），特別是在現有最新技術的互連元件陣列 中，其中個別互連陣列的尺寸（例如長度及寬度）被減小 來配合相應增加的接觸墊或端子密度。彈簧常數的減小一 般而言減小對於給定偏轉X可施加於彈性互連元件的負荷或 力F的大小（k = F / X )。因此，此種互連元件一般而言最好 也只能支承中等的接觸力，此可能不足以對電子組件實現 可靠的壓力接觸。 ‘ 所需要的是彈性互連元件及增進互連元件的彈性的方 法，特別是適合用於目前的精細節距電連接且可提昇來用 於未來的技術的彈性互連元件。並且也需要改進的製造互 連元件的方法，特別是可重複的，有一致性的，且不額貴 的方法。 發明槪說 本發明揭示互連元件及互連元件的製造與使甩方法。 在一實施例中，互連元件包含可連接於基板的第一元件材 料，及連接於第一元件材料的第二元件材料。第一元件材 料及第二元件材料的至少之一包含具有可轉變性質的材料 ，使得在轉變時，互連元件的形狀變形。一例子爲第一及/ 或第二元件材料具有使得材料的第一體積可轉變成爲不同 的第二體積的性質。 本紙張尺度適用中國國豕標準（CNS ) A4規格（210 X 297公着） ---------«裝-- (請知閲讀背、面之注意事項再填寫本頁)Smhh et al. U.S. Patent No. 5,613,861 (and its complementary division U.S. Patent No. 5,8 4 8,6 8 5) discloses a photolithographically patterned spring interconnect element formed on a substrate having A body with an inherent stress gradient formed from an elastic material such as a chromium-molybdenum alloy or a nickel-zirconium alloy. The stress gradient causes the end of the body to bend away from the substrate in an arc shape when the end is released from the substrate. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) I --------- * I (Please read the notes on the back # before filling this page) Order the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by a consumer cooperative 546803 A7 B7 V. Description of the invention (5) To achieve the desired body shape, 'Smith et al. Must limit the thickness of the interconnecting elements described in US Patent No. 5,6 1 3, 8 61. The limitation on the thickness of the interconnecting elements results in a limitation on the spring constant k of the interconnecting elements (k increases with increasing thickness), especially in the state-of-the-art interconnecting element arrays, where the size of individual interconnect arrays (Such as length and width) are reduced to match the corresponding increase in contact pad or terminal density. The reduction of the spring constant generally reduces the amount of load or force F (k = F / X) that can be applied to the elastic interconnection element for a given deflection X. Therefore, it is generally best for such interconnection elements to support only moderate contact forces, which may not be sufficient to achieve reliable pressure contact with electronic components. ‘What is needed is a flexible interconnect element and a method for improving the flexibility of the interconnect element, especially a flexible interconnect element suitable for current fine pitch electrical connections and which can be upgraded for future technologies. There is also a need for improved methods of making interconnected components, particularly repeatable, consistent, and inexpensive methods. SUMMARY OF THE INVENTION The present invention discloses an interconnect element and a method for manufacturing and using the interconnect element. In one embodiment, the interconnection element includes a first element material connectable to a substrate, and a second element material connected to the first element material. At least one of the first element material and the second element material includes a material having a transformable property such that the shape of the interconnected element is deformed during the transition. An example is the property that the first and / or second element material has a first volume that can be transformed into a different second volume. This paper size applies to China National Standard (CNS) A4 specification (210 X 297) --------- «Installation-(Please read the precautions on the back and front, and then fill out this page)

、1T 經濟部智慧財產局員工消費合作社印製 546803 A7 B7 五、發明説明（6 ) 本發明的互連元件的一部份可連接於例如 基板，並且與在基板處的訊號電連通。互連元 種不同的形狀，以在使二電子組件互連時容許 一較佳實施例爲懸臂式形狀’其中互連元件的 於例如對探針接觸墊或另一電子組件的端子的 是用於墊連接二電子組件。 電子組件的 件可採用各 彈性變形。 自由端可用 電連接，或 在本發明的一方面中，互連元件的第一元件材料及第 二元件材料的形狀被配置成使得第二元件材料敷設在第一 元件材料上，並且第一體積大於第二體積。在此情況中， ---------•裝-- (請心閲讀背〜面之注意事項再填寫本頁) 經濟，部智慧財產局員工消費合作社印製 轉變至較小的第二體積造成互連元件沿著其長度的某一部 份變形。在互連元件採用在基板上的懸臂式形 ，體積轉變在一實施例中會造成互連元件的自 連接的基座成弧形之下變形（偏轉）離開基板，因而提供 凸出的互連元件。互連元件可從基板偏轉的距離可由例如 一行進止動件來限制，使得在一例子中，可對在基板上（ 或基板上方）的多個互連元件建立一致的偏轉距離。一旦 互連元件的形狀變形，則第二元件材料可保留或被移除， 以分別形成雙材料或單材料互連元件。 藉著提供由進行性質轉變來使互連元件變形的材料構 成的互連元件，基板上的互連元件的製造與習知技術方法 相比可被簡化。雙材料或單材料互連元件也可作用成爲§ 終互連結構的則身或核心，其中此最終結構係藉著對互連 元件結合另外的材料或層例如彈性層而形成。 本發明也揭不電子組件。在一實施例中，電子組件包 狀的例子中 由端在朝向 訂 本紙張尺度適用中周國家標準（ CNS ) A4規格（210X297公釐） 546803 A7 B7 五、發明説明（7 ) (請也閲讀背^之注意事項再填寫本頁) 曰一基板，其具有在基板上的可接近的多個接觸結點，以 及多個自由站立彈性互連元件，其中互連元件連接於基板 成爲使得一互連元件的附著元件或基座電接觸接觸結點中 相應的.個。在另一實施例中，接觸結點爲在基板上或基 板中的訊號線。互連元件在一方面包含可連接於基板的第 --元件材料，以及連接於第一元件材料的第二元件材料。 第一元件材料及第二元件材料之一包含具有可轉變性質的 材料，.使得在轉變時，互連元件的形狀變形。一例子爲第 一及/或第二元件材料具有使得材料的第一體積可轉變成爲 不同的第二體積的性質。/ ‘ 本發明也揭示一種方法。此方法包含產生連接於基板 且包含第一元件材料及第二元件材料的互連元件；將互連 元件在一端部處從基板釋放；及轉變第一元件材料及第二 元件材料之一的性質以使互連元件變形。性質轉變的一例 子爲使第一元件材料及第二元件材料之一的體積轉變成爲 不同的第二體積。在一實施例中，互連元件的端部的釋放 可在轉變步驟之前或之後發生。 經濟部智慧財產局員工消費合作社印製 在一方面中，互連元件可採用多種不同的形狀，例如 懸臂式，其中互連元件的自由端可用於例如對探針的電連 接或是電連接電子組件。第二元件材料可敷設在第一元件 材料上成爲使得在一實施例中，體積轉變導致例如第二體 積小於第一體積。在懸臂式互連元件的情況中，互連元件 的自由端可在轉變時變形，以使觸點的自由端移動離開基 板。在轉變之後，可移除第二元件材料來產生單材料互連 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 546803 A7 B7 五、發明説明（δ ) _~~ 元件。此後一種操作在其餘材料會處於其至少多少會保持 經修改的形狀的狀態的情況特別有用。 (請t閲讀背^之注意事項再填寫本頁) 由本發明的方法形成的互連元件可單獨站立或可作用 成爲最終互連結構的前身。在一實施例中，此方法在轉變 步驟之後包含在基板上定圖型一掩蔽材料成爲具有暴露互 連兀件的表面的開口，以及在互連元件的暴露表面上塗覆 例如爲彈性材料的第三元件材料，以增加互連元件的彈簧 常數。一合適的掩蔽材料爲抗電泳材料，其可被引入至基 板的表面上。使用抗電泳材料成爲掩蔽材料的一有利點爲 其可在不瓦解（例如損壞）基板上的互連元件之下被均勻 地引至基板上。 包含新接觸元件的製品可如同在固持固定件中藉著壓 力而固定於第二電子組件或用來測試晶圓的探針設備。製 品也可例如藉著軟焊而被較永久地固定，如同傳統技術的 安裝1C於系統板。 從此處所呈現的圖式及詳細敘述可使另外的特徵，實 施例，及有利點顯明。 經濟部智慧財產局員工消費合作社印製 圖式簡要敘述 從以下的詳細敘述，附隨的申請專利範圍，以及圖式 可使本發明的特徵.，方面，.及有利處更完全地顯明。 圖1爲具有多個接觸墊而在接觸墊上具有短路層的電子 組件的一部份的剖面側視圖。 圖2顯示根據本發明的第一實施例的在基板上定圖型一 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公嫠） _ 11 - 546803 A7 B7 ______ 五、發明説明（9 ) 掩蔽材料而具有對多個接觸墊的開口之後的圖1的結構。 圖3顯示熱處理之後的圖1的結構。 圖4顯示在將活化層保角引入至結構的頂部表面上之後 的圖1的結構。 圖5顯示在結構的頂部表面上定圖型一第二掩蔽材料之 後的圖1的結構。 圖6顯示在將第一元件材料引入由第二掩蔽材料所界定 的開口 .中之後的圖1的結構。 圖7顯示在將第二元件材料引至第一元件材料上之後的 圖:1的結構。 圖8顯示在移除第二掩蔽材料之後的圖1的結構。 圖9顯示在移除暴露的黏著層材料之後的掘1的結構。 圖1 0顯不在移除第一掩蔽材料之後的圖1的結構。 圖1 1顯不在誘發第二兀件材料的體積改變之後的圖1的 結構。 圖1 2顯不在第三掩蔽材料的保角沈積之後的圖1的結構 〇 圖1 3顯不界定第三掩蔽材料的圖1的結構。 圖1 4顯示在界定第三掩蔽材料成爲具有對第二元件材 料的開口之後的圖1的結構。 圖1 5顯示在將第三元件材料引至第二元件材料的暴露 部份上之後的圖1的結構。 圖1 6顯不在將探針材料引至第三元件材料上之後的圖丄 的結構。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐）— ------ ---------— •· (請瓜閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 546803 A7 ----：_ 五、發明説明（10) 圖1 7顯示在移除第三掩蔽材料之後的圖1的結構。 圖1 8顯示在引入行進止動件材料之後的圖1的結構。 圖1 9顯示在定圖型行進止動件材料之後的圖1的結構。 圖2 0顯不在引入第二接觸材料之後的圖1的結構。 圖2 1顯示互連元件的偏轉距離，其中互連元件包含200 微英吋（大約5 // m (微米））的鈀/鈷合金構成的第一元件 材料’以及厚度有變化的鎳/鈷合金構成的第二元件材料。 鼠2 2顯示根據本發明的另一實施例的電子組件的一部 @的剖面側視圖，其中電子組件具有在接觸墊上的短路層 ’在短路層上的掩蔽材料，在掩蔽材料上的活化層，被引 入及定圖型在活化層上的第一元件材料。 圖23顯示在將麻田散體狀態的形狀記憶合金（SMA ) 材料引至被定圖型的第一元件材料上之後的圖22的結構。 圖24顯示在SMA材料的定圖型之後的圖22的結構。 圖25顯示在移除第一元件材料之後的圖22的結構。 圖26顯示在SM A材料轉變成記憶狀態之後的圖22的結 構。 圖27顯示在移除SMA材料之後的圖22的結構。 圖2 8顯示在對每一互連元件引入探針材料及接觸材料 以及行進止動件材料的定圖型之後的圖22的結構。 元件對照表 100 . 110 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------..·裝-- (請t閱讀背\面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 電子組件或結構 基板 546803 A7 B7 五、發明説明（11 ) 經濟部智慧財產局員工消費合作社印製 1 12 1 19 120 121 130 140 150 160 170 180 185 187 190 200 210 220 230 240 25 0 380 hi h2 錨固部份 導電電路 接觸墊或端子 相應接觸墊或端子 短路層 第一掩蔽材料層 活化層 第二掩蔽材料層 第一元件材料 . 第二元件材料 複合樑元件，互連元件 曲率止動件 第三掩蔽材料層 掩模 開口 第三元件材料 接觸材料 行進止動材料 接觸材料，塗覆層 形狀記憶合金（SMA)材料 長度 長度 偏轉距離. 高度 (請先閲讀背面之注意事項再填寫本頁) •裝· 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 546803 A7 B7 五、發明説明（12 ) ^ 高度 h4 高度 t 厚度 t' 厚度 發明的詳細敘述 本發明相關於互連元件，包括接觸元件。根據本發明 的一方面，至少在一開始，互連元件包含至少二材料，並 且材料之一或兩者可進行轉變來使互連元件的形狀變形。 一例子爲材料的至少之一的從第一體積至不同的第二體積 的體積轉變，此體積轉變造成互連元件形狀的改變。本發 明的互連元件的一有利點爲此種結構可根據簡化的技術來 形成爲具有想要的形狀，彈性，及彈簧常數。 以此方式，本發明敘述與習知技術互連元件相比具有 增進的特性的互連元件，因而增進本發明的互連元件用於 目前及未來的減小尺寸的應用的適合性，包括在電子組件 經濟部智慧財產局員K消費合作社印製 之間提供導電路徑，例如在電子組件的接觸墊或端子的接 觸及/或測試中。 以下的討論敘述二互連材料的至少之一的轉變（例如 體積轉變）以使互連兀件的形狀變形（例如修改）。就第 一材料敷設在第一材料上的至少二材料結構而言，可能有 若干的轉變景況。此種景況包括但是不受限於第二元件材 料進行體積轉變成爲較小體積，第一元件材料進行體積轉 變成爲較大體積，第一元件材料及第二元件材料（以及可 本紙張尺度通用中國國家標準（CNS ) M規格（210><297公羡 -15- 546803 A7 B7 五、發明説明（13 ) 能有的額外材料）各自進行體積轉變以使互連元件變形， 以及二材料具有不同的應力性質以例如經由熱處理而使互 連元件的形狀變形。一般而言’金屬材料在溫度改變下的 行爲在此技術中已被瞭解，因而本發明利用此行爲來以簡 單的方式設計具有增進的彈性及彈簧常數的互連元件。 在以下的實施例中，合適的電子組件包括但是不受限 於主動半導體裝置，記憶體晶片，由任何合適的半導體材 料例如矽（Si )或砷化鎵（GaAs )製成的包括半導體晶圓 或晶粒的半導體晶圓的一部份，陶瓷基板，有機基板，印 刷電路板（PCB )，有機膜片，聚亞胺薄材，空間變壓器， 探針卡，晶片載體，製造互連插座，測試插座，犧牲構件 ’包括但是不受限於陶瓷及塑膠封裝以及晶片載體的半導 體封裝，及連接器。電子組件可爲主動裝置或支撐一或多 個電子連接部份的被動裝置。一般而言，合適的電子組件 包括但是不受限於包含積體電路的裝置，其中積體電路具 有對電路提供電出入的至少二接觸墊或端子。此種裝置以 積體電路晶片（或微晶片）爲代表，其具有對裝置的積體 電路提供出入的多個暴露的接觸墊或端子。 本發明的互連元件可製造在其要結合的電子組件上或 與其要結合的電子組件獨立地製造。在獨立製造的情況中 ’本發明設計互連元件可製造成具有不受與電子組件的製 造相關聯的材料及佈局考量限制的形狀，尺寸，及冶金學 。獨立製造也避免電子組件暴露於與形成互連元件相關聯 的製程條件。在直接製造在基板上的情況中，本發明設計 本紙張尺度適用中國國家標準（CNS )从胁（21〇><297公董 請 先· 閱 讀 背 面、 之 注 意 事 項 再 養 經濟一部智慧財產局員工消費合作社印製 -16- 546803 A7 __ B7 ____ 五、發明説明（14 ) 互連元件可直接形成在基板上的觸點或端子上，因而減少 轉移操作以及減少對準問題。 (請L閲讀背*v之注意事項再填寫本頁) 設置在諸如探針卡總成的空間變壓器的電子組件上， 本發明的互連元件被設計來適應具有非常小節距或間隙欲 度的電子組件的接觸墊或端子。在一實施例中，互連元件 採用交替的方向（例如左-右-左-右），以在其柱部份之間 達成比在其尖端部份之間大的節距。在另一實施例中，.互 連元件.採用交替的長度（例如短-長-短-長），以在相鄰互 連元件的柱或錨固部份之間達成比在尖端部份處大的節距 。類似地，交替的互連元件可製造成在其尖端部份處具有 比在其柱或錨固部份處大的節距。總括而言，不論是製造 在其要結合的電子組件上或與其要結合的電子組件獨立地 製造的互連元件可採用多種不同的方向以適應與其接觸的 電子組件相關聯的各種不同的組態。 經濟部智慧財產局員工消費合作社印製 圖1顯示電子組件或結構100的剖面側視圖。結構100爲 例如探針卡總成的空間變壓器或積體電路。在此例子中， 結構100包含以半導體，有機，金屬，或陶瓷爲基礎的基板 1 10，其具有在基板1 1〇的表面上的接觸墊或端子丨20。在商 業可得的以陶瓷爲基礎的電子組件（例如多層陶瓷基板， 諸如低溫共火（co-fued)陶瓷（LTCC)基板）的情況中， 結構100可在基板1 10的相反表面上含有相應的接觸墊或端 子1 2 1。在相反表面上的相應接觸墊或端子1 2 1是例如經由 通過基板1 1 0的導電電路1 1 9而連接，例如由銷，銅，金， 鎳，或鎢及鋁或這些材料的組合或其合金或其他導電元素 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） _ 17 _ 546803 A7 B7 五、發明説明（15 ) 及其合金構成的電路。材料，厚度，處理變化，及類似者 的細節可參見審查中的共同讓渡的1 99 8年2月26曰申請的名 爲「石印技術界定的微電子接觸結構（L i t h 〇 g r a p h i c a 11 y Defined Microelectronic Contact Structure)」的美國專利 申請案序號第09/032,47 3號（FFI-P048 )，以及在1 998年11 月9日公告成爲W0 98/52224的PCT對應案，二者藉著參考結 合於此。 基板1 10上的接觸墊或端子Ϊ20爲適合於用來連接於互 連元件的例如銅，鎳，及金，其係藉著例如濺射，電鍍， 或軟焊而形成於導電材料的沈積物。在一例子中，銅方便 電鍍製程，並且爲上方層。 在此實施例中，敷設在結構1 0 0的基板1 1 0上方的爲短 路層130。短路層130爲例如銅（Cu )，鈦（Τι ) ‘，或鈦-鎢 ( ΊΊ-W)，或是其他適當的金屬或合金，其在一方面作用 來在互連元件在基板1 10上的形成期間使接觸墊或端子120 短路。從以下的敘述會很明顯，短路層1 30的短路特徵可有 利地被採用來爲用來在基板110上製造互連元件的電解製程 (例如電鍍製程）建立適當的電位。應瞭解電解製程是用 來形成本發明的互連元件的技術之一，並且其他技術可能 也很適合，例如化學或濺射沈積或無電極電鍍製程。應瞭 解所示的操作可在基板1 1 0的二表面上同時或依序執行，以 產生「雙面」彈簧裝置。在此情況中，在相反表面上的接 觸結構及/或互連元件之間可能存在重新分佈及非一對一的 關係。 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） 請 先· 閲 讀 背 面、 之 注 項 再 填 馬 本 頁 經濟部智慧財產局員工消費合作社印製 -18- 546803 A7 B7 五、發明説明（16) 在一實施例中，短路層130藉著例如濺射而被引至基板 110的表面上至大約3000埃至6000埃的厚度，例如大約5000 埃。或者可將短路層1 3 0引至基板1 1 0的相反側，以使延伸 通過基板11 0的接觸墊或端子1 2 1短路。 圖2顯示在基板1 10的表面上沈積第一掩蔽材料層140之 後的結構1 0 0。在一實施例中，第一掩蔽材料層1 4 0爲光抗 蝕劑，其如此技術中已知的被旋轉塗覆在基板1 1 0的表面上 且被定圖型。第一掩蔽材料層140被沈積及定圖型爲包含開 口。開口可位在於接觸墊或端子1 20的一部份的正上方的位 置處，或是在某些情況中，可位在遠離接觸墊或端子120的 位置處。藉著使開口位在遠離接觸墊或端子的位置處，互 連元件可以用與電子組件的接觸墊或端子的佈局不同的佈 局被製造在電子組件上。用來重新路由接觸墊或端子的特 定例子可參見讓渡給本發明的受讓人且藉著參考結合於此 的審查中的1 9 97年10月20日申請的名爲「具有在遠離相應 端子的區域處的彈性接觸元件的電子組件（Electronic Component Having Resilient Contact Elements at Areas Remote from Corresponding Terminals)」的美國專利申請 案序號第08/95 5,00 1號（FFI-P041)。此參考文獻也包含有 用的掩蔽材料的討論。 在一實施例中，第一掩蔽材料層140被沈積至大約15至 25微米（g m )的厚度。第一掩蔽材料層140—般被沈積至 隨後形成的互連元件的本體與基板1 1 〇的表面·之間所想要的 最小間隙距離的厚度。在想要有彈性的例子中，第一掩蔽 本紙張尺度逍用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) •^4衣· 訂 經濟部智慧財產局員工消費合作社印製 546803 A7 B7 五、發明説明（17) 材料層140的厚度應被選擇成使得互連元件的潛在「現底（ bottoming out)」被減至最小。 在第一掩蔽材料層140爲光抗蝕劑的實施例中，在將光 抗蝕劑定圖型及顯影成具有至接觸墊或端子1 20的開口（或 重新路由適合開口）之後，光抗蝕劑層可承受軟熔或其他 處理來使開口的邊緣傾斜。產生傾斜邊緣傾向於減少與經 由開口形成的互連元件相關聯的應力點的數目。軟熔處理 也在光抗蝕劑中引入額外的交聯，此加強光抗蝕劑而增進 其用於隨後的處理操作的性質。在一例子中”軟熔於多個 階段達成。在第一階段，‘結構100被帶至大約105°C的溫度 ，然後跳升至1 10°C，然後跳升至且保持於120 °C —小時。 在第二階段中，溫度增加至13CTC —小時。應瞭解軟熔處理 的溫度可被調整得較高或較低以適合隨後的處理操作。 軟熔處理之外的另一選擇爲以濺射或化學蝕刻來使第 一掩蔽材料層1 40中的開口的邊緣傾斜。 經濟部智慧財產局員工消費合作社印製 圖4顯不在引入活化層1 5 0之後的結構1 0 0。在一方面， 活化層150藉著電鍍製程而被引入來活化用於隨後材料的引 入的暴露表面。在一實施例中，活化層150是藉著濺射例如 鉻/鈦鎢/金（Cr/TiW/Au)層的材料而形成。也可使用鈦/金 (Ti/Au)或鉻/金（Cr/Au)。經由濺射沈積來活化結構1 00 的表面的另一選擇爲化學活化該表面。在一例子中，鈀/錫 (Pd/Sn)氯化物浴在結構100的表面上引入一膜，並且鈀（ Pd)的無電極電鍍被引入來形成一導電膜。· 圖5顯示在第二掩蔽材料層160的引入及定圖型之後的 -20- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） )46803 A7 B7 五、發明説明（18 ) 結構100。在一方面，第二掩蔽材料層160界定隨後形成的 互連元件的本體的形狀。 圖6顯示在引入第一元件材料1 7 0之後的結構1 〇 〇。在一 例子中，第一元件材料170爲熱穩定層。一特別較佳的材料 馬由例如鈀/鈷（Pd/Co )構成的彈性合金材料，其一般在暴 ®於其可能暴露的溫度時尺寸不會改變，一般而言爲惰性 材料，並且相當易於活化。第一元件材料1 70用的其他可能 材料包.括鎳，鎢，铑，鐵，銅，銀，及鋁，以合金形式較 @ °在另一實施例中，活化層150可被使用成爲熱穩定層。 在所述的第一元件材料170爲Pd/Co材料的實施例中， 胃〜元件材料1 7 0是經由如此技術中已知的電.鍍製程被引入 °第一元件材料的合適引入厚度爲大約50至100微英吋（大 約1至3 // m )。或者，第一元件材料1 70由多層構成，例如 钯/鈷合金的第一層及鈀的第二層。 圖7顯不在第一元件材料170的上表面上引入第二元件 材料180之後的結構1〇〇。在一方面，第二元件材料180包含 使得其體積可從第一體積轉變至不同的第二體積的性質。 體積轉變可爲可逆的或不可逆的。不可逆性可例如經由材 料的重新晶化而達成。一合適的材料爲65/3 5原子百分比的 鎳/鈷.（Ni/Co )合金，其具有藉著鍍以添加劑而選擇性定做 的性質’例如諸如糖精，萘三磺酸（NTS A )的亮化劑，或 其他第一類（Class 1 )及第二類（Class 2 )亮化劑，以及 諸如2 - 丁炔-1，4 -二醇及硫脲的調平劑，及諸如溴化鎳及氯 化鎳的鹽。使用添加劑於合適的第二元件材料中的細節可 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 、言 經濟部智慧財產局員X消費合作社印製 546803 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（19 ) 參見讓渡給本發明的受讓人且藉著參考整體結合於此的審 查中的1 9 9 8年1 2月2 2日申請的名爲「藉著結合稀釋添加劑 的金屬的適度熱處理來製成具有增進的材料性質的製品的 方法（Method of Making a Product with Improved Material Properties by Moderate Heat Treatment of a Metal Incorporating a Dilute Additive)」的美國專利申請案序號 第 09/2 1 7,5 89 號（FFI-P036D1)。 第一元件材料170及第二元件材料180的引入量在一實 施例中被選擇成爲來控制互連元件結構離開基板的變形（ 例如偏轉）量。如上所述，第二元件材料1 80從第一體積轉 變成不同的第二體積。在N i / C 〇的情況中，體積改變爲不可 逆的，並且第二體積小於或不同於（就X，y，z座標方面來 說）第一體積。 ‘ 已經.斷定第一元件材料170對第二元件材料180 (至少 在由Pd/Co構成的第一元件材料170與由Ni/Co構成的第二元 件材料1 80之下）的厚度比對於選定的偏轉而言很重要。圖 2 1顯示根據以下的關係式的懸臂樑型互連元件的以千分之 一英吋爲單位的偏轉量（5 ( h i 8。）），其具有由p d / C 〇構 成且具有200微英吋（大約5微米）的厚度的第一元件材料 170，以及厚度有變化的由Ni/Co構成的第二元件材料180， (請先閲讀背面之注意事項再填寫本頁) .·裝-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 1T 546803 A7 B7 V. Description of the invention (6) A part of the interconnection element of the present invention can be connected to, for example, a substrate and is in electrical communication with a signal at the substrate. Different shapes of interconnecting elements to allow a preferred embodiment to be a cantilevered shape when interconnecting two electronic components, where the interconnecting elements are used, for example, with probe contact pads or terminals of another electronic component Two electronic components are connected to the pad. The components of the electronic assembly can be elastically deformed. The free end can be electrically connected, or in one aspect of the invention, the shape of the first element material and the second element material of the interconnecting element is configured such that the second element material is laid on the first element material, and the first volume Larger than the second volume. In this case, --------- • Equipment (Please read the precautions on the back to the top and then fill out this page) Economy, Ministry of Intellectual Property Bureau Employee Cooperative Cooperatives Printed to a smaller The two volumes cause the interconnect element to deform along a portion of its length. The interconnecting element adopts a cantilever shape on the substrate. In one embodiment, the volume change will cause the self-connected base of the interconnecting element to deform (deflect) away from the substrate under an arc, thereby providing a protruding interconnect. element. The distance that the interconnecting elements can be deflected from the substrate can be limited by, for example, a row stop, so that in one example, a consistent deflection distance can be established for a plurality of interconnecting elements on (or above) the substrate. Once the shape of the interconnect element is deformed, the second element material may be retained or removed to form a bi-material or single-material interconnect element, respectively. By providing an interconnect element composed of a material that undergoes a property change to deform the interconnect element, the fabrication of interconnect elements on a substrate can be simplified compared to conventional techniques. A bi-material or mono-material interconnect element can also act as the body or core of a final interconnect structure, where the final structure is formed by combining the interconnect element with another material or layer such as an elastic layer. The present invention also does not disclose electronic components. In one embodiment, in the example of the package of the electronic component, the standard of the book is applied to the size of the paper. The national standard (CNS) A4 specification (210X297 mm) 546803 A7 B7 V. Description of the invention (7) (Please also read Note on the back ^ Please fill in this page again) It is a substrate, which has multiple contact nodes accessible on the substrate, and a plurality of free standing elastic interconnection elements, where the interconnection elements are connected to the substrate so that one Connect the corresponding element of the attached element or the base electrical contact contact point of the element. In another embodiment, the contact nodes are signal lines on or in a substrate. The interconnect element includes, on the one hand, a first element material connectable to a substrate, and a second element material connected to the first element material. One of the first element material and the second element material includes a material having a transformable property such that the shape of the interconnecting element is deformed during the transition. An example is the nature of the first and / or second element material such that the first volume of the material can be transformed into a different second volume. / ‘The present invention also discloses a method. The method includes generating an interconnect element connected to a substrate and including a first element material and a second element material; releasing the interconnect element from the substrate at one end; and changing a property of one of the first element material and the second element material In order to deform the interconnection element. An example of the property change is to change the volume of one of the first element material and the second element material to a different second volume. In one embodiment, the release of the ends of the interconnecting elements may occur before or after the transition step. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In one aspect, the interconnecting elements can take many different shapes, such as cantilever, where the free end of the interconnecting element can be used, for example, to electrically connect a probe or to electrically connect electronics Components. The second element material may be deposited on the first element material such that, in one embodiment, the volume change causes, for example, the second volume to be smaller than the first volume. In the case of a cantilevered interconnecting element, the free end of the interconnecting element can be deformed during the transition to move the free end of the contact away from the substrate. After the conversion, the second component material can be removed to create a single-material interconnect. This paper is dimensioned to the Chinese National Standard (CNS) A4 specification (210X297 mm) 546803 A7 B7 5. Description of the invention (δ) _ ~~ components. This latter operation is particularly useful where the rest of the material will be in a state where it will at least retain its modified shape. (Please read the notes on the back and fill in this page again.) The interconnect element formed by the method of the present invention can stand alone or act as a precursor to the final interconnect structure. In an embodiment, the method includes, after the converting step, patterning a masking material on the substrate into an opening having a surface that exposes the interconnection element, and coating the exposed surface of the interconnection element with, for example, an elastic material. Three-element material to increase the spring constant of interconnected elements. A suitable masking material is an anti-electrophoretic material, which can be introduced onto the surface of the substrate. An advantage of using an anti-electrophoretic material as a masking material is that it can be uniformly directed onto the substrate without breaking down (eg, damaging) the interconnect elements on the substrate. Articles containing new contact elements can be fixed to a second electronic component or a probe device used to test a wafer as if in a holding fixture by pressure. The article can also be fixed more permanently, for example by soldering, as in the conventional technique of installing 1C on a system board. From the drawings and detailed description presented here, additional features, embodiments, and advantages can be made apparent. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics Brief description of the drawings The following detailed description, accompanying patent application scope, and drawings can make the features, aspects, and advantages of the present invention more fully apparent. FIG. 1 is a cross-sectional side view of a portion of an electronic component having a plurality of contact pads and a short-circuit layer on the contact pads. Fig. 2 shows a first embodiment of the present invention for patterning a paper on a substrate. A paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 cm) _ 11-546803 A7 B7 ______ V. Description of the invention (9) The structure of FIG. 1 after the masking material has openings to a plurality of contact pads. FIG. 3 shows the structure of FIG. 1 after heat treatment. Fig. 4 shows the structure of Fig. 1 after introducing an active layer conformal onto the top surface of the structure. Fig. 5 shows the structure of Fig. 1 after patterning a second masking material on the top surface of the structure. Fig. 6 shows the structure of Fig. 1 after the first element material is introduced into the opening defined by the second masking material. Fig. 7 shows the structure of Fig. 1 after the second element material is introduced onto the first element material. FIG. 8 shows the structure of FIG. 1 after the second masking material is removed. FIG. 9 shows the structure of the trench 1 after the exposed adhesive layer material is removed. FIG. 10 shows the structure of FIG. 1 after the first masking material is removed. Fig. 11 shows the structure of Fig. 1 after the volume change of the second element is induced. FIG. 12 shows the structure of FIG. 1 after conformal deposition of a third masking material. FIG. 13 shows the structure of FIG. 1 without defining a third masking material. Fig. 14 shows the structure of Fig. 1 after defining the third masking material to have an opening to the second element material. Fig. 15 shows the structure of Fig. 1 after the third element material is introduced onto the exposed portion of the second element material. Fig. 16 shows the structure of Fig. 之后 after the probe material is introduced onto the third element material. This paper size applies to China National Standard (CNS) A4 specification (210X 297 mm) — ------ ---------— • (Please read the notes on the back and fill in this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 546803 A7 ----: _ 5. Description of the invention (10) Figure 17 shows the structure of Figure 1 after the third masking material is removed. FIG. 18 shows the structure of FIG. 1 after the travel stop material is introduced. FIG. 19 shows the structure of FIG. 1 after patterning the travel stop material. FIG. 20 shows the structure of FIG. 1 after the introduction of the second contact material. Figure 21 shows the deflection distance of the interconnect element, where the interconnect element contains 200 micro-inches (approximately 5 // m (micrometers)) of a first element material composed of a palladium / cobalt alloy, and nickel / cobalt with varying thicknesses. Alloy made of the second element material. Rat 22 shows a cross-sectional side view of a part of an electronic component according to another embodiment of the present invention, wherein the electronic component has a short-circuit layer on the contact pad 'masking material on the short-circuit layer, an active layer on the masking material , The first element material that is introduced and patterned on the activation layer. FIG. 23 shows the structure of FIG. 22 after introducing a shape memory alloy (SMA) material in a state of Asada's bulk onto the patterned first element material. FIG. 24 shows the structure of FIG. 22 after patterning of the SMA material. FIG. 25 shows the structure of FIG. 22 after the first element material is removed. Fig. 26 shows the structure of Fig. 22 after the SM A material is transformed into a memory state. FIG. 27 shows the structure of FIG. 22 after the SMA material is removed. Fig. 28 shows the structure of Fig. 22 after the probe material and the contact material and the travel stopper material are patterned for each interconnection element. Component comparison table 100. 110 This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) --------- .. · installation-(Please read the precautions on the back and then fill out (This page) Order printed electronic components or structural substrates for employees 'cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 546803 A7 B7 V. Invention Description (11) Printed by the employees' cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 12 1 19 120 121 130 140 150 160 170 180 185 187 190 200 210 220 230 240 25 0 380 hi h2 Anchor part of the conductive circuit contact pad or terminal corresponding contact pad or terminal short-circuit layer first masking material layer activation layer second masking material layer first element material. Second element Material composite beam element, interconnecting element curvature stopper third masking material layer mask opening third element material contact material travel stop material contact material, coating layer shape memory alloy (SMA) material length length deflection distance. Height ( Please read the notes on the back before filling in this page) • The size of the bound and bound paper is applicable to China National Standard (CNS) A4 (210X297 mm) 546803 A7 B7 Description (12) ^ the present invention is described in detail in relation to the interconnection element, comprising a contact element height t of height h4 thickness t 'thickness invention. According to an aspect of the present invention, at least initially, the interconnect element includes at least two materials, and one or both of the materials may be transformed to deform the shape of the interconnect element. An example is a volume transition of at least one of the materials from a first volume to a different second volume, which volume transition causes a change in the shape of the interconnect element. An advantage of the interconnection element of the present invention is that such a structure can be formed to have a desired shape, elasticity, and spring constant according to a simplified technique. In this way, the present invention describes interconnect elements having enhanced characteristics compared to conventional technology interconnect elements, thereby enhancing the suitability of the interconnect element of the present invention for current and future reduced size applications, including in Provides a conductive path between printed by K Consumer Cooperatives, a member of the Intellectual Property Bureau of the Electronic Component Economics Department, such as during contact and / or testing of contact pads or terminals of electronic components. The following discussion describes the transformation (eg, volume transformation) of at least one of the two interconnect materials to deform (eg, modify) the shape of the interconnect elements. With regard to at least two material structures where the first material is laid on the first material, there may be several changes. Such scenarios include, but are not limited to, the volume conversion of the second component material into a smaller volume, the volume conversion of the first component material into a larger volume, and the first component material and the second component material National Standards (CNS) M specifications (210 > < 297 Public Envy-15- 546803 A7 B7 V. Description of the invention (13) Additional materials available) each undergo volume transformation to deform the interconnecting components, and the two materials have different The stress properties of the material are such that the shape of the interconnecting element is deformed, for example, by heat treatment. In general, the behavior of a metal material under temperature changes is known in the art, and therefore the present invention uses this behavior to design in a simple manner with improved In the following embodiments, suitable electronic components include, but are not limited to, active semiconductor devices, memory chips, and any suitable semiconductor material such as silicon (Si) or gallium arsenide. (GaAs) part of a semiconductor wafer including a semiconductor wafer or die, ceramic substrate, organic substrate, printing Circuit boards (PCBs), organic membranes, polyimide sheets, space transformers, probe cards, wafer carriers, manufacturing interconnect sockets, test sockets, sacrificial components' include but are not limited to ceramic and plastic packages and wafer carriers Semiconductor packages, and connectors. Electronic components can be active devices or passive devices that support one or more electronic connection parts. Generally speaking, suitable electronic components include, but are not limited to, devices that include integrated circuits, of which Integrated circuits have at least two contact pads or terminals that provide electrical access to the circuit. Such devices are represented by integrated circuit wafers (or microchips) that have multiple exposed contact pads that provide access to the integrated circuit of the device Or the terminal. The interconnecting element of the present invention can be manufactured on or independently of the electronic component to which it is to be combined. In the case of independent manufacturing, the 'interconnecting element of the present invention is designed to have no The materials and layout associated with the manufacture of electronic components take into account the restricted shape, size, and metallurgy. Independent manufacturing also avoids the explosion of electronic components Due to the process conditions associated with forming interconnect elements. In the case of direct manufacturing on a substrate, the present invention is designed to apply the Chinese National Standard (CNS) to this paper standard from the threat (21〇 > < 297. Read the notes on the back of the book, and print it on the Consumers Cooperative of the Intellectual Property Bureau. -16-546803 A7 __ B7 ____ V. Description of the invention (14) Interconnect elements can be directly formed on the contacts or terminals on the substrate. Therefore, the transfer operation and the alignment problem are reduced. (Please read the notes on the back * v and then fill out this page.) It is set on the electronic components such as the space transformer of the probe card assembly, and the interconnection element of the present invention is designed to Accommodates contact pads or terminals for electronic components with very small pitch or clearance. In one embodiment, the interconnect elements use alternate directions (e.g. left-right-left-right) to achieve a greater pitch between their pillar portions than between their tip portions. In another embodiment, the interconnecting elements adopt alternate lengths (eg, short-long-short-long) to achieve greater between posts or anchoring portions of adjacent interconnecting elements than at the tip portion. Pitch. Similarly, alternating interconnecting elements can be manufactured with a larger pitch at their tip portions than at their posts or anchoring portions. In a nutshell, whether it is manufactured on the electronic component to which it is to be integrated or an interconnect element manufactured separately from the electronic component to which it is to be integrated, it can take a number of different orientations to accommodate the various configurations associated with the electronic component with which it is in contact. . Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs FIG. 1 shows a cross-sectional side view of an electronic component or structure 100. The structure 100 is, for example, a space transformer or an integrated circuit of a probe card assembly. In this example, the structure 100 includes a semiconductor, organic, metal, or ceramic-based substrate 110 having contact pads or terminals 20 on the surface of the substrate 110. In the case of a commercially available ceramic-based electronic component (eg, a multilayer ceramic substrate such as a low temperature co-fued ceramic (LTCC) substrate), the structure 100 may contain a corresponding on the opposite surface of the substrate 110. The contact pads or terminals 1 2 1. The corresponding contact pads or terminals 1 2 1 on the opposite surface are connected, for example, via conductive circuits 1 1 9 through the substrate 1 10, for example by pins, copper, gold, nickel, or tungsten and aluminum or a combination of these materials or Its alloy or other conductive elements The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 17 _ 546803 A7 B7 V. The circuit of invention description (15) and its alloy. For details of materials, thicknesses, processing changes, and the like, please refer to the commonly-assigned February 26, 1988 application under review entitled "lithographic technology-defined microelectronic contact structures (Lithographica 11 y Defined Microelectronic Contact Structure) "US Patent Application Serial No. 09 / 032,47 3 (FFI-P048), and the PCT counterpart of WO 98/52224 announced on November 9, 1998, both of which are incorporated by reference Combined here. The contact pads or terminals Ϊ 20 on the substrate 1 10 are, for example, copper, nickel, and gold suitable for connecting to interconnecting components, which are formed on a conductive material by, for example, sputtering, plating, or soldering. . In one example, copper facilitates the plating process and is an upper layer. In this embodiment, the short circuit layer 130 is laid on the substrate 110 of the structure 100. The short-circuit layer 130 is, for example, copper (Cu), titanium (Ti), or titanium-tungsten ((-W), or another suitable metal or alloy, which acts on the one hand to interconnect elements on the substrate 1 10 The contact pads or terminals 120 are short-circuited during the formation. As will be apparent from the following description, the short-circuiting characteristics of the short-circuit layer 130 may be advantageously employed to establish an appropriate potential for an electrolytic process (such as an electroplating process) used to fabricate interconnect elements on the substrate 110. It should be understood that the electrolytic process is one of the techniques used to form the interconnect elements of the present invention, and other techniques may also be suitable, such as chemical or sputtering deposition or electrodeless plating processes. It should be understood that the operations shown can be performed simultaneously or sequentially on the two surfaces of the substrate 110 to produce a "double-sided" spring device. In this case, there may be redistribution and non-one-to-one relationships between contact structures and / or interconnecting elements on opposite surfaces. This paper size applies to Chinese National Standard (CNS) A4 specifications (210 × 297 mm) Please read the back and the notes before filling in this page Printed by the Employees ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-18- 546803 A7 B7 V. Invention Explanation (16) In one embodiment, the short-circuit layer 130 is introduced onto the surface of the substrate 110 by, for example, sputtering to a thickness of about 3000 angstroms to 6000 angstroms, such as about 5000 angstroms. Alternatively, the short-circuit layer 130 can be led to the opposite side of the substrate 110 to short-circuit the contact pads or terminals 1 21 that extend through the substrate 110. FIG. 2 shows the structure 100 after the first masking material layer 140 is deposited on the surface of the substrate 110. In one embodiment, the first masking material layer 140 is a photoresist, which is spin-coated on the surface of the substrate 110 and patterned as known in the art. The first masking material layer 140 is deposited and patterned to include openings. The opening may be located directly above a portion of the contact pad or terminal 120, or in some cases, may be located away from the contact pad or terminal 120. By making the openings away from the contact pads or terminals, the interconnecting elements can be manufactured on the electronic components with a layout different from the layout of the contact pads or terminals of the electronic components. Specific examples of rerouting contact pads or terminals can be found in the application titled "Having the Electronic Component Having Resilient Contact Elements at Areas Remote from Corresponding Terminals "US Patent Application Serial No. 08/95 5,00 1 (FFI-P041). This reference also contains a discussion of useful masking materials. In one embodiment, the first masking material layer 140 is deposited to a thickness of about 15 to 25 micrometers (gm). The first masking material layer 140 is generally deposited to a thickness of a desired minimum gap distance between the body of the subsequently formed interconnect element and the surface of the substrate 110. In the case of wanting flexibility, the first masking of this paper size is to use the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Ministry of Intellectual Property Bureau 546803 A7 B7 V. Description of the invention (17) The thickness of the material layer 140 should be selected so that the potential "bottoming out" of the interconnected components is minimized. In the embodiment where the first masking material layer 140 is a photoresist, after patterning and developing the photoresist to have openings to the contact pads or terminals 120 (or rerouting suitable openings), the photoresist The etchant layer can withstand reflow or other treatments to tilt the edges of the opening. Creating a beveled edge tends to reduce the number of stress points associated with interconnecting elements formed through the opening. The reflow process also introduces additional cross-linking in the photoresist, which strengthens the photoresist and improves its properties for subsequent processing operations. In one example, "melting was achieved in multiple stages. In the first stage, the structure 100 was brought to a temperature of approximately 105 ° C, then jumped to 110 ° C, and then jumped to and held at 120 ° C. —Hours. In the second stage, the temperature is increased to 13CTC—hours. It should be understood that the temperature of the reflow treatment can be adjusted higher or lower to suit the subsequent processing operation. Another option other than reflow treatment is to Sputtering or chemical etching to incline the edges of the openings in the first masking material layer 1 40. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, Figure 4 shows the structure 1 0 0 after the introduction of the active layer 1 50. In one aspect, the activation layer 150 is introduced by an electroplating process to activate an exposed surface for subsequent introduction of materials. In one embodiment, the activation layer 150 is formed by sputtering such as chromium / titanium tungsten / gold (Cr / TiW / Au) layer material. Ti / Au or Cr / Au can also be used. Another option to activate the surface of the structure 100 by sputtering deposition is to chemically activate the surface. In one example, a palladium / tin (Pd / Sn) chloride bath is introduced on the surface of the structure 100 Film, and electroless plating of palladium (Pd) was introduced to form a conductive film. Figure 5 shows the -20 after the introduction and patterning of the second masking material layer 160. This paper size applies the Chinese National Standard (CNS) ) A4 specification (210X297 mm)) 46803 A7 B7 5. Invention description (18) Structure 100. In one aspect, the second masking material layer 160 defines the shape of the body of the interconnect element that is subsequently formed. Figure 6 shows the Structure 100 after a component material 170. In one example, the first component material 170 is a thermally stable layer. A particularly preferred material is an elastic alloy material composed of, for example, palladium / cobalt (Pd / Co). It generally does not change in size when exposed to the temperature to which it may be exposed, is generally an inert material, and is quite easy to activate. Other possible materials for the first component material 1 70 include nickel, tungsten, rhodium, Iron, copper, silver, and aluminum are alloyed at a lower temperature than °. In another embodiment, the activation layer 150 may be used as a thermally stable layer. In the embodiment where the first element material 170 is a Pd / Co material, In the stomach ~ element material 170 is via The electroplating process known in this technology is introduced. A suitable introduction thickness of the first element material is about 50 to 100 micro inches (about 1 to 3 // m). Alternatively, the first element material 1 70 is composed of multiple layers. For example, the first layer of palladium / cobalt alloy and the second layer of palladium. FIG. 7 shows the structure 100 after the second element material 180 is introduced on the upper surface of the first element material 170. In one aspect, the second element Material 180 includes properties that allow its volume to transition from a first volume to a different second volume. The volume transition can be reversible or irreversible. Irreversibility can be achieved, for example, by recrystallization of the material. A suitable material is a 65/3 5 atomic percent nickel / cobalt (Ni / Co) alloy, which has properties that are selectively tailored by plating with additives', such as saccharin, naphthalenetrisulfonic acid (NTS A) Brighteners, or other class 1 (Class 1) and class 2 (Class 2) brighteners, and leveling agents such as 2-butyne-1,4-diol and thiourea, and bromine Salts of nickel and nickel chloride. Details of the use of additives in suitable second component materials can be applied to Chinese paper standard (CNS) A4 (210X297 mm) for this paper size (please read the precautions on the back before filling this page), Member of Intellectual Property Bureau, Ministry of Economic Affairs Printed by X Consumer Cooperative 546803 A7 B7 Printed by Consumer Cooperatives of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (19) See the review assigned to the assignee of the present invention and incorporated by reference in its entirety 1 9 9 The method named "Method of Making a Product with Improved Material Properties by Moderate Heat Treatment of a Metal Incorporating a Dilute Additive) "US Patent Application Serial No. 09/2 1 7,5 89 (FFI-P036D1). The amount of introduction of the first element material 170 and the second element material 180 is selected in one embodiment to control the amount of deformation (e.g., deflection) of the interconnect element structure away from the substrate. As described above, the second element material 1 80 transitions from the first volume to a different second volume. In the case of Ni / C0, the volume change becomes irreversible, and the second volume is smaller or different (in terms of X, y, z coordinates) from the first volume. '' It has been determined that the thickness ratio of the first element material 170 to the second element material 180 (at least below the first element material 170 composed of Pd / Co and the second element material 180 composed of Ni / Co) for the selected The deflection is important. FIG. 21 shows the deflection amount (5 (hi 8.)) In thousandths of an inch of a cantilever type interconnect element according to the following relationship, which has a pd / C 〇 and 200 micrometers. Inch (approximately 5 micron) thickness of the first element material 170, and the second element material 180 made of Ni / Co with varying thickness, (Please read the precautions on the back before filling this page).

*1T 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇Χ297公釐） -22- 546803 A7 B7 五、發明説明（20 ) 其中ε爲收縮百分比，Z爲互連兀件樑的長度，h 17。爲第一 元件材料170的厚度，而h!s。爲第二元件材料180的厚度。在 此例子中，互連元件爲具有大約40ιηΠ (密耳）（大約1〇〇〇 V m )的長度的矩形樑。對於具有200微英吋（大約5 // m ) 的第一元件材料170，Ni/Cq構成的第二元件材料180的厚度 範圍可從大約125至250微英吋（大約3至6 # m )，以產生大 約0.008英吋或8ιηιΓ(大約200 β m )的的變形偏轉距離（J 2 (h ! 8。））。因此，在此例子中，第一元件材料1 7 〇對第二 元件材料180的比可在大約1.6至1至大約0.8至1之間變化。 較少的額外第二元件材料1 80在此例子中會產生較少的偏轉 。改變第一元件材料1 70的量可能會大幅影響偏轉距離。 將第一元件材料170的厚度選擇成可容許第二元件材料 1 8 0有一厚度範圍可減輕一些對給定沈稹的精密度的憂慮， 因爲只要最終結構是以合理的欲度在計算的比內，即應可 實現想要的偏轉。因此，對於電鍍結構的電鍍厚度均勻性 或使厚度最佳化（例如藉著化學機械或機械拋光）的憂慮 可降低或避免。在後一種情況中，如果想要此種最佳化， 則拋光可能是合適的，只要此拋光與最佳化的標度相容， 例如拋光數微英吋（小於1 // m )。 以上的討論將第二元件材料的轉變描述成爲熱轉變。 此轉變被深信是構成第二元件材料的結晶結構重新定向的 結果。應瞭解合適的第二元件材料的體積也可藉著其他的 外部事件來改變，例如增加的壓力，或輻射的引入，諸如 離子束，電子束，紅外或紫外輻射。 本紙張尺度適用中國國家標準（ CNS ) A4規格（210X297公羡） (請先閲讀背面之注意事項再填寫本頁) ..·裝· 訂 經濟部智慧財產局員工消費合作社印製 23- 546803 A7 B7 五、發明説明（21 ) (請先_閲讀背面之注意事項再填寫本頁) 在以上的討論中，第一元件材料1 7 0包含P d / C 〇合金， 而第二元件材料1 80爲敷設在第一元件材料170上的Ni/Co合 金◦或者，假設相同的方向，第一元件材料1 7 0可由N i / C 〇 合金構成，而第二元件材料180可由Pd/Co合金構成。 經濟部智慧財產局員工消費合作社印製 在一實施例中，第一及第二元件材料170及180被引入 成使得應力通過複合樑兀件1 8 5有變化，其中應力於離開基 板的方向成/爲漸增的拉伸應力。在一情況中，第一元件材 料170包含Ni/Co合金，其在被引入時具有範圍從拉伸到壓 縮的應力。在包含電鍍的引入過程中，添加劑（例如糖精 )可能如想要的被加入於電鍍池以增加Ni/Co的壓縮應力。 第二元件材料180包含Pd/Co合金，其在被引入時具有與第 一元件材料170相比較爲拉伸的應力。電鍍的Pd/Co合金中 固有充分的拉伸應力，但是額外的應力可如此技術中已知 的經由添加劑而被引入。在較佳實施例中，第一元件材料 1 7 0中的應力爲壓縮應力，而第二元件材料1 8 0中的應力爲 拉伸應力。合適的第一元件材料1 7 0及第二元件材料1 8 0的 量是在大約0.04至20mil (大約1至500 // m)的數量級。合適 的厚度比可由實驗決定。 在第一元件材料170及第二元件材料180的引入及定圖 型之後，結構100在一例子中被加熱至40 °C至100 °C —段足 以鬆驰由Ni/Co構成的第一元件材料170的時間週期。Ni/Co 的適度加熱被相信是使得材料蠕變成較鬆弛的形式。材料 中的蠕變一般被定義成爲由應力導致的應變的與時間與關 連的部份。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 546803 A7 , _ _ B7 _ 五、發明説明（22 ) (請先閱讀背面之注意事項再填寫本頁) 於升高的溫度，第一元件材料170在由第二元件材料 18 0所施加的拉伸應力下蠕變。此使得互連元件185變形（ 例如偏轉離開基板1 1 0的表面），並且降低第一及第二元件 材料1 70及1 8 0中的應力的大小。因此，應力鬆弛可被視爲 變形的驅動力。 圖8顯示在移除第二掩蔽材料層160之後的結構100。在 第二掩蔽材料層1 60爲光抗飩劑的例子中，第二掩蔽材料層 160的移餘可以用氧電漿蝕刻（例如氧成灰（ashing))來 達成。移除第二掩蔽材料層1 60的其他方法包括但是不受限 於.雷射磨蝕及濕化學蝕刻。一旦第二掩蔽材料層160被移除 ’在先前由第二掩蔽材料層1 60保護的那些區.域中的活化層 1 5 0被移除。活化層1 50可例如藉著此技術中已知的化學或 濺射蝕刻而被移除。圖9顯示在移除暴露區域中的活化層 150之後的結構1〇〇。 經濟部智慧財產局員工消費合作社印製 圖1 0顯不在移除第一掩蔽材料層1 4 0之後的結構1 0 0。 在第一掩蔽材料層1 40爲光抗蝕劑的例子中，第一掩蔽材料 層140可藉著各種不同的方法包括氧電漿蝕刻，雷射磨蝕， 及濕化學蝕刻而被適當地移除。一旦被移除，圖1 0顯示具 有形成在表面上的多個互連元件185的基板110。 圖1 1顯示在使結構承受熱處理以誘發第一元件材料1 7 0 及第二元件材料180之一或兩者轉變之後的結構100。在所 示的實施例中，轉變爲第二元件材料1 80的體積轉變。體積 轉變在一實施例中進行至至少90%的完成度，·而以90至95% 的完成度較佳。第二元件材料1 8 0的體積轉變可藉著決定材 本紙張尺度通用中國國家標準（CNS ) A4規格（210 X297公釐） ^ 546803 Α7 Β7 五、發明説明（23 ) 料的線性熱膨脹係數來估計。在一例子中，沈積至大約1 2 5 至1 7 5微英吋（大約3至4 // m )的厚度的由錬/銘構成的弟一 元件材料會在歷時十分鐘的於3 1 0 °C的熱處理下經歷大約〇 · 2 %的線性改變。此種線性改變造成體積收縮’而同時第一元 件材料1 7 0的體積在一實施例中保持相當固定。體積改變造 成互連元件的自由端朝向其固定的基座彎曲。由離開基板 110的表面的距離h!測量的合適曲率爲例如大約6至8mil ( 1 50至 200 " m ) 〇 如圖11所示，第二元件材料.18 0的體積轉變會修改互連 元件185的形狀。換句話說，第二元件材料180的體積轉變 及其所伴隨的互連元件1 8 5的自由端傾向於朝向其基座彎曲 的作用會使互連元件185的第一元件材料170及活化層150類 似地變形。 在某些情況中，可能想要限制第二元件材料1 80的曲率 大小。但是，在一實施例中，想要達成大於或等於90%的轉 變或大約90至95 %的轉變，以形成可靠的互連元件，例如就 變形特性而言可靠者。在此種情況中，可在結構100上方加 上曲率止動件。參考圖1 1，一旦互連元件185彎曲離開基板 1 1 0而打擊曲率止動件1 87 (以虛線顯示），曲率止動件會 防止其進一步彎曲離開基板（亦即朝向其固定基座）。以 此方式，材料可被選擇成爲與沒有曲率止動件1 87的情況所 選擇者相比具有較大許多的體積轉變性質。例如，爲在基 板1 10上引入多個互連元件，而每一個具有類似的形式，且 具有大約8mil (大約200 " m )的偏轉距離b，材料（例如第 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） ⑼ -Zo (請先閲讀背面之注意事項再填寫本頁) .·裝· 訂 經濟部智慧財產局員工消費合作社印製 546803 A7 B7 五、發明説明（24 ) (請先閲讀背面之注意事項再填寫本頁) 一元件材料1 70及第二元件材料180 )的種類及量可被選擇 成使得在例如熱轉變時的固有偏轉距離大於8mil (例如1 0至 12mil (大約250至3 00 μ m ))。例如爲平面狀基板的曲率 止動件187可被放置在離開基板110的表面大約8mil (大約 2.00 // m )的距離處，以在轉變期間限制互連元件的偏轉距 離。如此，在曲率止動件1 8 7限制例如z軸變形（偏轉）的 情況中，互連元件可仍然於X及y座標平面中變形。最終的 互連元件會一致地具有離開基板110的表面大約8mil (大約 2 00 // m )的高度。 - 經濟部智慧財產局員工消費合作社印製 以上的討論是集中於第二元件材料敷設在第一元件材 料上，且進行轉變以轉變成較小的體積或不周的應力位準 而造成互連元件的自由端彎曲離開基板。應瞭解其他的組 態也可達成類似的結果。例如，第二元件材料可位在第一 元件材料下方，且具有使得第二元件材料的熱轉變會增加 材料的體積的性質。在此情況中，應可類似地達成互連元 件的彎曲離開基板。同樣的，第一元件材料可被選擇成使 得其進行體積轉變，而第二元件材料具有相當固定的體積 。其他的組態例如二材料均進行體積轉變或具有不同的熱 膨脹性質也會有類似的行爲，如同形狀記憶合金（SMA ) 〇 圖1 2顯不在第三掩蔽材料層1 9 0保角沈積在基板1 1 0上 之後的結構1 00 ◦第三掩蔽材料層1 9 〇的合適厚度爲大約〇. 3 至1.5mil (大約8至30// m )。.在一實施例中，第三掩蔽材料 層1 9 0被選擇成使得保角沈積會對基板n 〇的上表面的整個 本紙張尺度適用中國國家標準（CNS )八4規格（210X297公董） -27- 546803 A7 B7 五、發明説明（25 ) (請先閲讀背面之注意事項再填寫本頁) 部份提供適當的掩蔽以及在互連元件185上的覆蓋。在某些 情況中，互連元件1 8 5的結構穩定性不足以支承藉著例如旋 轉塗覆而沈積的掩蔽材料層。此技術中已知的另外的沈積 技術可被考慮來用於此應用。CVD或PECVD (電漿增進CVD ).對沈積特別有用。其他的沈積技術例如濺射沈積一般也 不適合於提供充分的邊緣或表面覆蓋。許多引入技術不會 掩蔽互連元件1 8 5的底側的任何部份，也不會掩蔽基板1 1 〇 或短路層1 3 0的表面上有互連元件1 8 5禁止此種引入的部份 〇 . 經濟部智慧財產局員工消費合作社印製 在一方面，正抗電泳劑被引入成爲第三掩蔽材料層1 90 。一般而言，抗電泳劑爲一種電沈積的光抗蝕劑，其中在 1 0 0 0至2 0 0 0埃的數量級的帶電粒子被引入在導電表面上的 均勻塗覆層中。合適的正抗電泳劑爲在商業上可從賓州的 匹兹堡的PPG Industries獲得Electr olmage®。第二種選擇是 藉著不會損壞複合互連元件的噴霧方法來施加正光抗鈾劑 。在任一情況中，第三掩蔽材料層1 9 0在一方面被選擇成爲 具有充分的厚度，其足以在互連元件上界定一額外層，並 且對互連元件1 8 5提供充分的（在一實施例中爲完全的）掩 蔽，使得額外的互連材料只會被引至互連元件185的暴露區 域上，而不會被引至基板1 10的表面上（例如不在互連元件 185下方）。 圖1 3顯示被曝光以打開複合互連原件的上表面上的一 區域的結構1 〇〇。在所示的實施例中，掩模200對準在結構 100上方，其具有與互連元件185的上表面相應的開口 210。 本紙張尺度逍用中國國家標準（CNS ) A4規格（210X297公釐） 546803 A7 B7 五、發明説明（26 ) 在此實施例中’顯影是如同傳統的正光抗蝕劑般進行。在 顯影之後’第二抱敝材料層1 9 0會存留在除了互連元件1 8 5 的上表面之外的所有區域。圖1 4顯示顯影之後的結構。 圖1 5顯示在互連元件1 8 5上引入第三元件材料2 2 0之後 的結構1 0 0。在一實施例中，第三元件材料2 2 0爲由例如鎳 合金構成的導電材料，例如可能具有添加劑的鎳/鈷（例如 70%鎳/3 0%鈷），例如藉著參考結合於此的審查中的共同讓 渡的1 9 9 8年1 2月2 2日申請的名爲「藉著結合稀釋添加劑的 金屬的適度熱處理來製成具有增進的材料性質的製品的方 法（Method of Making a Product with Improved Material Properties by Moderate Heat Treatment of a Metal Incorporating a Dilute Additive)」的美國專利申請案序號 第09/2 1 7,5 89號（FFI-P036D1)以及1 999年3月25曰公告的對 應的PCT申請案第WO99/14404號中所詳細敘述者，其對互連 元件1 8 5提供增加的彈簧力（亦即「彈簧材料」）。一般而 言，第三元件材料220被引入至適合於增加互連元件185的 彈簧常數的厚度。在一實施例中，第三元件材料220被引入 至例如大約.1 mil (大約25// m)的厚度，以構成互連元件 1 85的本體的90%以上。整體而言，包含第三元件材料220的 互連元件185與不具有第三元件材料220的互連元件185相比 界定具有較大的彈簧常數及可測量的彈性的互連元件（例 如’彈簧常數一般而言部份取決於互連元件的尺寸）。在 互連元件被用來與例如根據目前的技術所製成的電子組件 的接觸墊或端子形成電連接的實施例中，大約0.2克力/nul 本紙張尺度通用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) .·裝. 訂 經濟，部智慧財產局員工消費合作社印製 546803 A7 五、發明説明（27 ) 或更大的彈簧常數很合適。應瞭解想要的彈簧常數可能根 據想要的應用而改變，例如在大約〇 〇1與1〇克力/mil之間的 彈簧常數，而以大約〇 〇1與2克力/mil之間較佳。這些參數 只是舉例說明用’因爲熟習此項技術者可製成具有寬廣的 彈簧常數範圍的非常薄或非常厚的結構。 應瞭解互連元件185可能已經具有想要的彈簧常數，甚 至是在大約0.01與10克力/mil之間的彈簧常數，因而使得不 須包含額外的彈簧材料。例如.，在上述的互連元件的變形 是藉著鬆弛材料的應力（例如減小第一元件材料170及第二 元件材料180中的應力的大小）而產生的實施例中，充分的 彈簧材料量例如0 · 5至1 m i 1 (大約1 2至2 5 // m ).的第一元件材 料170可被引入，因而不須在此時引入更多的彈簧材料。 在第三元件材料220爲鎳合金例如鎳/鈷的實施例中，第 三元件材料220可藉著數種沈積技術來沈積，包括但是不受 限於電鍍，化學汽相沈積，濺射沈積，及無電極電鍍。在 一例子中，第三元件材料220是經由電鍍製程而沈積。第三 元件材料220典型上是以商業上可得的電鍍溶液或電鍍浴的 形式應用。其次，電流施加在互連元件185與電鍍池（未顯 示）的陽極之間。互連元件1 8 5上建立的負電荷使得電鍍溶 液中的金屬離子還原成爲金屬狀態，將第三元件材料220塗 覆在互連元件185上。 在涉及材料的電解引入的某些情況中’可能不宜經由 將第三元件材料2 2 0鍍在由未處理的N i / C 〇合金構成的第二 元件材料.1 80上來引入。鎳或Ni/Co合金一般對於電鑛製程 本紙浪尺度適用中國國家標準（CNS ) A4規格（210 X297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 經濟，部智慧財產局員工消費合作社印製 546803 A7 B7 五、發明説明（28 ) (請先聞讀背面之注意事項再填寫本頁) 而言並非良好的接收表面，因爲其有氧化的傾向。增進鎳 或NWC ◦合金的接收性質的技術包括緊接著在引入第二元件 材料180之後（例如在Ni/Co有顯著的氧化量之前），將在1〇 至1 〇 〇微英吋（大約3 μ m)的數量級的一銅（C u )的薄層引 入（例如電鍍）至第二元件材料180。或者，在引入第二元 件材料180之後，互連元件185可被放置在氫氯酸（HC1 )浴 (「打擊浴（stnke bath )」）中，以活化Ni/Co合金的表 面，然後第三元件材料220可被引入。 圖16顯示在第三元件材料220的表面上選擇性引入接觸 材料23 0之後的結構100。’在一例子中，接觸材料230減小第 三元件材料220的電阻係數，並且對形成的互連結構提供接 觸冶金學。合適的接觸材料包括但是不受限於金（Au )， 鈀（Pd)，铑（Rh)，及銀（Ag)，以及其合金。在一實 施例中，接觸材料2 3 0被引至第三元件材料2 2 0的表面至大 約3 0微英吋（大約0.75 // m )的厚度。 經濟部智慧財產局員工消費合作社印製 圖17顯示在移除第三掩蔽材料層190之後的結構100。 在第三掩蔽材料層190爲光抗蝕劑的實施例中，第三掩蔽材 料層1 90可使用傳統的方法而被移除，例如電漿蝕刻（例如 氧成灰），雷射磨蝕，或濕化學鈾刻。在移除第三掩蔽材 料層19 0之後，具有自由站立部份的互連元件1 8 5形成在基 板1 10上。在所述的實施例中，互連元件185爲包含活化層 1 5 0，第一元件材料1 7 0，第二元件材料1 8 0，第三元件材料 220，.及接觸材料230的複合互連元件。此時，結構1〇〇可承 受熱處理來增進互連元件1 8 5的性質。此種熱處理詳細敘述 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 546803 A7 B7 五、發明説明（29 ) (請先閱讀背面之注意事項再填寫本頁) 在讓渡給本案的受讓人的審查中的1 9 9 8年1 2月2 2曰申請的 名爲「藉著結合稀釋添加劑的金屬的適度熱處理來製成具 有增進的材料性質的製品的方法（Method of Making a Product with Improved Material Properties by Moderate Heat Treatment of a Metal Incorporating a Dilute Additive )」的美國專利申請案序號第09/2 1 7,5 89號（FFI-P036D1) .中，包括例如於3 5 0 °C十分鐘或於3 00 °C六十分鐘的適度熱 處理，用來增進Ni/Co合金的性質。如此參考文件中所述的 ，對於不同的材料可適當地有不同的熱處理時間表。並且 ，此時使用例如電漿蝕刻（例如氧成灰），雷射磨蝕，或 濕化學鈾刻來移除短路層1 3 0的暴露部份。或者，短路層 1 30可在此時經由溶劑，蝕刻劑，或機械方法而被定圖型成 爲適當的痕跡。 經濟部智慧財產局員工消費合作社印製 圖18顯示在結構的上方及周圍引入行進止動材料240之 後的結構1 00。行進止動材料240被引入來在複合互連元件 與例如電子組件的接觸墊或端子接觸時限制複合互連元件 的行進。在一實施例中，參考圖1 7，複合互連元件的尖端 離開基板1 10的表面的高度h2爲大約5至15mil (大約250至 4 00 // m)。想要的互連元件185的偏轉量可被決定成爲大約 3mil (.大約75// m)。因此，在一實施例中，行進止動材料 240被沈積至大約2至12nul (大約50至300 μ m)的厚度，以 使互連元件185在行進止動材料24〇上方的高度h2爲大約3mil (大約7 5 // m )。在一實施例中，行進止動材料2 4 〇爲不導 電材料，例如司光成像材料，例如商業上可從麻州的 本紙張尺度適用中國國家標準（CNS ) A4規格（2ι〇'χ297公楚） -32- 546803 A7 B7 五、發明説明（30 ) (請先閲讀背面之注意事項再填寫本頁) N e w t ο η的M i c r ◦ C h e m C 〇 r ρ 〇 r a t i ο η獲得的爲負光抗餓劑的 SU-8。用於行進止動材料240的其他材料包括矽氮化物或砂 氧氮化物或Ci_ba Specialty Chemicals (瑞士的 Basil， www.cibasc.com)的Probelec®。合適的行進止動組態及其使 用的詳細討論可見藉著參考結合於此的審查中的共同讓渡 的1 99 8年7月13日申請的名爲「互連總成及方法（ Interconnected Assemblies and Methods )」的美國專利申 請案序號第09/ 1 1 4,5 86號，以及1 999年1月4日申請的對應的 PCT申請案第US99/00322號。 經濟部智慧財產局員工消費合作社印製 . 在正確量的行進止動材料240被引至基板1 1〇上之後， 行進止動材料240被定圖型。在負光抗蝕劑的例子中，行進 止動材料2 4 0經由一掩模而曝光，使得圍繞錨固部份1 1 2的 區域曝光。因爲行進止動材料2 4 0爲負光抗飩劑，所以由於 掩模而未接受曝光的那些區域會被顯影而移除光抗蝕劑（ 而光抗蝕劑的曝光部份會存留）。圖19顯示行進止動材料 240在包含互連元件185的錨固部份1 12的基板1 10的一部份上 被定圖型之後的結構10 0。在此實施例中，行進止動材料 2 4 0會在有一些限制下容許互連元件185朝向基板1 10偏轉。 例如，當一第二電子組件指向基板1 1 0時，此電子組件會被 行進止動材料240止動。 圖2 0顯不具有由接觸材料構成的外塗覆層2 5 0的互連元 件1 8 5，例如塗覆至若干微英吋（大約1至1 〇 // m )的無電極 金（A u )。此可增進互連元件的導電性質（例如降低阻抗 )，以及給予額外的抗侵蝕性。應瞭解塗覆層25 0在此實施 本紙張尺度通用中國國家標準（CNS ) A4規格（210 X297公釐） 546803 A7 B7 五、發明説明（31 ) 例中爲選擇性的。 (請先閲讀背面之注意事項再填寫本頁) 在所述的貫施例中，互連元件1 8 5爲複合互連元件。應 瞭解由第一元件材料170及第二元件材料丨8〇的核心形成的 互連元件185可能對於某些應用而言已足夠，因而不須引入 額外的彈性材料（例如第三元件材料22〇 )。此種互連元件 可被界疋成可㈣具有由接觸材料（例如A u )構成的外塗覆 層。同時’也應瞭解額外的元件材料可在第三元件材料220 以外加入，以例如增加互連元.件的彈性。以此方式，可採 用類似於與第三元件材料220的引入一起敘述的處理步驟。 在那些情況中，一般而言不須太過憂慮在施加額外的掩蔽 材料層時損壌互連元件，因此較多傳統的掩蔽材料形式可 被利用。 經濟/部智慧財產局員工消費合作社印製 圖2 2至2 7顯示形成根據本發明的互連元件的另外實施 例’其係從圖6所示的結構開始，其中敷設在活化層1 5 〇上 的第一兀件材料1 7 0根據由第二掩蔽材料層1 6 〇所建立的圖 型被定圖型。在一例子中，第一元件材料17〇爲熱穩定材料 ，例如Pd/Co合金。在圖22中，第二掩蔽材料層160例如藉 著氧電漿餓刻（例如氧成灰），濕化學蝕刻，或雷射磨蝕 而被移除。 圖2 3顯不在引入形狀記憶合金（s Μ A )材料3 8 0之後的 結構100。SMA爲展現在承受典型上爲熱程序的適當程序時 回復至某一先前界定的形狀或尺寸的能力的金屬材料群类頁 。此種材料可恢復大應變，或是在改變形狀時產生大幅白勺 力。某些鎳/鈦合金及以銅爲基礎的合金符合此要件。以銅 34 本紙張尺度通用中國國家標準（CNS ) A4規格（210X297公釐） 546803 A7 B7 五、發明説明（33 ) (請先閲讀背面之注意事項再填寫本頁) 變，結構承受於SM A材料3 8 0成爲沃斯田體相的轉變溫度以 上的溫度的熱處理。在轉變溫度以上，SM A材料3 80會朝向 其記憶狀態變形，因而使膜收縮。經由雙形狀（bimorphic )或雙金屬作用，SMA材料3 80與第一元件材料170的複合樑 的端部會在此情況中朝向其基座彎曲。以此方式，可使互 連元件達成想要的曲率，例如離開基板1 10的表面爲大約8 m 11 (大約2 0 0 // m )的高度h 4。在某些情況中，可能想要藉 著例如以上參考圖1 1及相關的文字所述的曲率止動件來限 制互連元件的曲率大小。 . 在以上的實施例中/ SM A材料3 80成爲記憶狀態的轉變 爲熱轉變。應瞭解可結合另外的外部刺激（例如壓力改變 或輻射）來產生轉變。在於升高的溫度的熱轉變的情況中 ，產生此種熱轉變的溫度處理可延伸至將第一元件材料1 7〇 退火，以修改材料的應力及增加變形的材料的穩定性。 經濟部智慧財產局員工消費合作社印製 在SM A材料3 80轉變至其記憶狀態以及第一元件材料17〇 的變形之後，在一例子中，SM A材料3 80可被移除，留下由 第一元件材料1 70 (及活化層150 )構成的互連元件。在一 情況中，SMA材料3 8 0可直接藉著電漿或化學蝕刻或雷射磨 蝕而被移除。或者，在SMA材料3 80與第一元件材料170之間 使用黏著劑的情況中，黏著劑可被溶解而使SM A材料3 80從 第一元件材料170分離。圖27顯示所得的結耩，其中SMa材 料3 80被移除’留下由第一元件材料170構成的互連元件。 在另一實施例中，SMA材料可存留。SMA材料的剛性有 助於整體的彈簧常數，其在不加入更多材料下給予夠高的 36- 本紙張尺度通用中國國家標準（CNS ) A4規格（210x297公釐） 546803 A7 ___ B7 ___ 五、發明説明（34 ) 彈簧常數。 (請先閲讀背面之注意事項再填寫本頁) SM A材料的厚度可被分開地選擇成會偏轉相當厚的樑 (材料170 )。此厚的樑可被調整成保持此新的形狀’而 S Μ A材料可被移除，使得所得的結構會具有充分高的彈簧 常數。 圖2 8顯示根據此實施例形成的一最終結構。此結構類 似於圖20所示者，並且顯示形成在基板110的表面上的三個 互連元件的剖面側視圖。每.一互連元件包含由例如鎳合金 諸如Ni/Co (例如70%Ni/30%Co )構成的第一元件材料170及 第三元件材料220，其可能具有添加劑，以對互連元件提供 增加的彈簧力（亦即「彈簧材料」）。一般而言，第三元 件材料220被引入至適合於用來將互連元件的彈簧常數增加 至合適的位準的厚度。形成互連元件的本體的9 0 %以上的在 大約1 nnl (大約25 // m )的數量級的厚度根據目前的技術是 合適的。圖2 8也顯示被引入至大約3 0微英吋（大約0.7 5 // m )的厚度的選擇性的接觸材料230，其係由例如金（Au )， ί巴（P d ) ’鍩（R h )，及銀（A g )，以及其合金構成。圖 經濟部智慧財產局員工消費合作社印製 中也顯示選擇性的接觸材料2 5 0，例如塗覆至若干微英吋（ 大約1至10//m)的無電極金（Au)。最後，圖28顯示可被 用來在一情況中限制互連元件的偏轉的選擇性的行進止動 材料240。這些材料的每一個的引入類似於以上參考圖12至 20及相關的文字所敘述者。 以上的敘述與其他方面一起顯示互連元件極具有想要 的形狀及彈簧常數的互連元件的製造。製造技術利用具有 本紙張尺度適用f關緖準（CNS ) A4規格（21GX297公釐) —---— 546803 A7 B7 五、發明説明（3弓 可轉變性質的某些金屬材料的行爲，以響應外部刺激（例 如熱）而變形來形成改進的互連元件。 (請先閲讀背面之注意事項再填寫本頁) 此處所述的互連元件適合於許多用途，包括但是不受 限於與電子組件一起採用來形成暫時或永久的接觸，或是 對電子組件暫時然後永久的接觸。此種接觸可被利用在例 如形成積體電路晶片或晶粒的製造流程中。例如，本發明 的互連元件可對成爲晶片或晶粒的「預燒（bunvin)」及/ 或功能測試的一部份的單獨或非單獨的晶片或晶粒的接觸 墊形成暫時接觸。永久連接的一例爲在可能包括被用來在 測試晶片或晶粒之下形成暫時連接的連接元件的情況下使 用本發明的連接元件來將晶片或晶粒經由例如封裝而電連 接於外部系統組件（例如PCB )。 經濟部智慧財產局員工消費合作社印製 製造流程詳細地敘述在例如藉著參考而結合於此的共 同讓渡的美國專利第5,829,1 28號中。本發明的連接元件可 被用在測試設備中，例如從例如爲探針卡或探針卡的空間 變壓器的基板延伸成爲探針，用來測試電子組件，如美國 專利第5,829,1 28號及也藉著參考而結合於此的共同讓渡的 美國專利第5,974,662號中所述的。本發明的互連元件也可 被用在插入物應用中，以連接二電子組件，如美國專利第 5,829，128號中所述的。 美國專利第5,829,1 28號另外敘述直接連接於半導體晶 粒（例如於結合墊）的互連元件而不須相應的封裝。此處 所述的互連元件同樣地適合於此種應用。藉著參考結合於 此的共同讓渡的美國專利第5,772,45 1號敘述適合於此處所 本紙張尺度適用中國國家標準（CNS ) A4規格（210x 297公釐） -38- 546803 A7 B7 五、發明説明（36 ) 述的互連應用的插座應用，以容許電子組件（例如半導體 封裝）被可釋放地安裝於電路板。一例子爲連接於第一基 板的互連元件例如經由壓力連接而連接於第二基板（例如 支撐基板）上的相應的接觸結點。第二接觸結點包含外部 連接點，以將整體總成（例如第一及第二基板）連接於在 例如爲電路板的第三基板上的相應的第三接觸結點。 在以上的詳細敘述中，本發明係參考其特定的實施例 而被敘.述。但是，很明顯在不離開由申請專利範圍所界定 的本發明的較寬廣的精神及範圍下可對其實施各種不同的 修正及改變。因此，說明書及圖式應被視爲舉例說明而非 限制性的意義。 (請先閱讀背面之注意事項再填寫本頁) I裝·* 1T This paper size applies to Chinese National Standard (CNS) A4 specification (21 × 297 mm) -22- 546803 A7 B7 V. Description of the invention (20) where ε is the shrinkage percentage and Z is the length of the interconnecting element beam. h 17. Is the thickness of the first element material 170, and h! S. Is the thickness of the second element material 180. In this example, the interconnection element is a rectangular beam having a length of about 40 μm (mil) (about 1000 V m). For a first element material 170 having 200 micro inches (about 5 // m), the thickness of the second element material 180 made of Ni / Cq can range from about 125 to 250 micro inches (about 3 to 6 # m) To produce a deformation deflection distance (J 2 (h! 8)) of about 0.008 inches or 8 μm (about 200 β m). Therefore, in this example, the ratio of the first element material 170 to the second element material 180 may vary from about 1.6 to 1 to about 0.8 to 1. Fewer additional second element materials 1 80 would produce less deflection in this example. Changing the amount of the first element material 170 may significantly affect the deflection distance. Choosing the thickness of the first element material 170 to allow the second element material 180 to have a thickness range can alleviate some concerns about the precision of a given sink, as long as the final structure is calculated at a reasonable ratio based on reasonable desires Within, the desired deflection should be achieved. As a result, concerns about plated thickness uniformity or optimized thickness (such as by chemical mechanical or mechanical polishing) of plated structures can be reduced or avoided. In the latter case, if such an optimization is desired, polishing may be appropriate as long as this polishing is compatible with the scale of the optimization, such as polishing several micro inches (less than 1 // m). The above discussion describes the transition of the second element material as a thermal transition. This transformation is believed to be the result of the reorientation of the crystalline structure of the material constituting the second element. It should be understood that the volume of a suitable second element material may also be changed by other external events, such as increased pressure, or the introduction of radiation, such as ion beam, electron beam, infrared or ultraviolet radiation. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 public envy) (Please read the precautions on the back before filling out this page) .. · Binding · Order Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 23- 546803 A7 B7 V. Description of the invention (21) (Please read the notes on the back before filling this page) In the above discussion, the first component material 1 70 contains P d / C 0 alloy, and the second component material 1 80 For the Ni / Co alloy laid on the first element material 170 or, assuming the same direction, the first element material 170 may be composed of Ni / Co alloy, and the second element material 180 may be composed of Pd / Co alloy . Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In one embodiment, the first and second component materials 170 and 180 are introduced so that the stress changes through the composite beam member 1 8 5, where the stress is formed in a direction away from the substrate. / Is the increasing tensile stress. In one case, the first element material 170 comprises a Ni / Co alloy, which, when introduced, has a stress ranging from stretching to compression. During the introduction process including plating, additives (such as saccharin) may be added to the plating bath as desired to increase the compressive stress of Ni / Co. The second element material 180 contains a Pd / Co alloy, which, when introduced, has a more tensile stress than the first element material 170. Tensile stresses are inherently sufficient in the plated Pd / Co alloy, but additional stresses can be introduced via additives as known in the art. In a preferred embodiment, the stress in the first element material 170 is a compressive stress, and the stress in the second element material 180 is a tensile stress. Suitable amounts of the first element material 170 and the second element material 180 are on the order of about 0.04 to 20 mil (about 1 to 500 // m). The appropriate thickness ratio can be determined experimentally. After the introduction and patterning of the first component material 170 and the second component material 180, the structure 100 is heated to 40 ° C to 100 ° C in one example—a segment sufficient to relax the first component made of Ni / Co Time period of material 170. The moderate heating of Ni / Co is believed to cause the material to creep into a more relaxed form. Creep in materials is generally defined as the time-dependent part of the strain caused by stress. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 546803 A7, _ _ B7 _ V. Description of the invention (22) (Please read the precautions on the back before filling this page) At elevated temperatures, The first element material 170 creeps under a tensile stress applied by the second element material 180. This deforms the interconnect element 185 (e.g., deflects away from the surface of the substrate 110) and reduces the amount of stress in the first and second element materials 170 and 180. Therefore, stress relaxation can be regarded as the driving force for deformation. FIG. 8 shows the structure 100 after the second masking material layer 160 is removed. In the example where the second masking material layer 160 is a photoresist, the shift of the second masking material layer 160 can be achieved by using an oxygen plasma etching (such as oxygen ashing). Other methods of removing the second masking material layer 160 include, but are not limited to, laser abrasion and wet chemical etching. Once the second masking material layer 160 is removed, the active layer 150 in the regions previously protected by the second masking material layer 160 is removed. The activation layer 150 may be removed, for example, by chemical or sputtering etching known in the art. FIG. 9 shows the structure 100 after the activation layer 150 in the exposed area is removed. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 10 shows the structure 1 0 0 after removing the first masking material layer 1 4 0. In the example where the first masking material layer 140 is a photoresist, the first masking material layer 140 may be appropriately removed by various methods including oxygen plasma etching, laser abrasion, and wet chemical etching. . Once removed, FIG. 10 shows a substrate 110 having a plurality of interconnecting elements 185 formed on a surface. FIG. 11 shows the structure 100 after subjecting the structure to a heat treatment to induce one or both of the first element material 170 and the second element material 180 to transform. In the illustrated embodiment, the volume transition to the second element material 180 is performed. The volume change is performed to at least 90% completion in one embodiment, and preferably 90 to 95% completion. The volume change of the second component material 180 can be determined by determining the paper size of the paper and the general Chinese National Standard (CNS) A4 specification (210 X297 mm) ^ 546803 Α7 Β7 V. Description of the invention (23) Linear thermal expansion coefficient of the material estimate. In one example, the elementary material consisting of 錬 / ming deposited to a thickness of about 12 5 to 17.5 micro-inches (about 3 to 4 // m) will be less than 3 1 0 in ten minutes. It undergoes a linear change of about 0.2% under heat treatment at ° C. This linear change causes a volume shrinkage 'while the volume of the first component material 170 remains relatively constant in one embodiment. The change in volume causes the free end of the interconnect element to bend toward its fixed base. A suitable curvature measured from the distance h! From the surface of the substrate 110 is, for example, about 6 to 8 mil (150 to 200 " m). As shown in FIG. 11, the volume change of the second element material. 180 will modify the interconnection The shape of the element 185. In other words, the volume change of the second element material 180 and the accompanying free end of the interconnect element 1 8 5 tend to bend toward its base, which will cause the first element material 170 and the activation layer of the interconnect element 185 150 is similarly deformed. In some cases, it may be desirable to limit the amount of curvature of the second element material 180. However, in one embodiment, it is desired to achieve a transition greater than or equal to 90% or a transition of about 90 to 95% to form a reliable interconnect element, such as a reliable one in terms of deformation characteristics. In this case, a curvature stop may be added above the structure 100. Referring to FIG. 11, once the interconnecting element 185 bends away from the substrate 110 and strikes the curvature stopper 1 87 (shown in dotted lines), the curvature stopper prevents it from further bending away from the substrate (ie toward its fixed base). . In this way, the material can be selected to have much larger volume transition properties than would have been the case in the absence of the curvature stop 187. For example, in order to introduce a plurality of interconnecting elements on the substrate 110, each of which has a similar form, and has a deflection distance b of about 8 mil (about 200 " m), the material (such as the first paper size applies the Chinese national standard) (CNS) A4 specification (210 X 297 mm) ⑼ -Zo (Please read the precautions on the back before filling out this page). ··· Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Employee Cooperatives 546803 A7 B7 V. Description of the invention (24) (Please read the notes on the back before filling in this page) The type and amount of one component material 1 70 and the second component material 180 can be selected so that, for example, the inherent deflection distance during thermal transition is greater than 8 mil (for example 10 to 12 mil (approximately 250 to 300 μm). For example, a curvature stopper 187 for a planar substrate may be placed at a distance of about 8 mil (about 2.00 // m) from the surface of the substrate 110 to limit the deflection distance of the interconnecting elements during the transition. As such, in the case where the curvature stopper 1 8 7 restricts, for example, the z-axis deformation (deflection), the interconnection element may still be deformed in the X and y coordinate planes. The final interconnect element will consistently have a height of about 8 mil (about 200 // m) from the surface of the substrate 110. -Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The above discussion is focused on the second component material being laid on the first component material, and the transformation is performed to transform into a smaller volume or an inadequate stress level causing interconnection The free end of the element is bent away from the substrate. It should be understood that other configurations can achieve similar results. For example, the second element material may be located below the first element material and has a property such that thermal transition of the second element material increases the volume of the material. In this case, it should be possible to similarly achieve the bending of the interconnection elements off the substrate. Similarly, the first element material can be selected such that it undergoes a volume change, while the second element material has a relatively fixed volume. Other configurations, such as the two materials, undergo a volume change or have different thermal expansion properties, similar to the behavior of a shape memory alloy (SMA). Figure 12 shows that the third masking material layer 1 90 is deposited on the substrate conformally. The structure after the 1 10 is 100 ◦ A suitable thickness of the third masking material layer 190 is about 0.3 to 1.5 mil (about 8 to 30 // m). In an embodiment, the third masking material layer 190 is selected so that the conformal deposition applies the Chinese National Standard (CNS) 8-4 specification (210X297) to the entire paper size of the upper surface of the substrate n0. -27- 546803 A7 B7 V. Description of the Invention (25) (Please read the notes on the back before filling out this page) The section provides appropriate masking and coverage on the interconnect element 185. In some cases, the structural stability of the interconnect elements 185 is not sufficient to support the layer of masking material deposited by, for example, spin coating. Additional deposition techniques known in this technology can be considered for this application. CVD or PECVD (plasma enhanced CVD). Especially useful for sedimentation. Other deposition techniques such as sputter deposition are generally not suitable for providing sufficient edge or surface coverage. Many introduction techniques do not mask any part of the bottom side of the interconnect element 185, nor do they mask the surface of the substrate 1 10 or the short-circuit layer 130. There are interconnect elements 1 8 5 〇. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs On the one hand, positive and negative electrophoretic agents were introduced as the third masking material layer 1 90. In general, an anti-electrophoretic agent is an electrodeposited photoresist in which charged particles on the order of 1000 to 2000 angstroms are introduced into a uniform coating layer on a conductive surface. A suitable positive and negative electrophoretic agent is Electr olmage®, which is commercially available from PPG Industries of Pittsburgh, PA. The second option is to apply a positive light anti-uranium agent by a spray method that does not damage the composite interconnect elements. In either case, the third masking material layer 190 is selected on the one hand to have a sufficient thickness that is sufficient to define an additional layer on the interconnect element and to provide sufficient (on a Complete in the embodiment) masking, so that additional interconnect material will only be directed onto the exposed area of the interconnect element 185, and not on the surface of the substrate 110 (eg not below the interconnect element 185) . Figure 13 shows a structure 100 that is exposed to open a region on the upper surface of the composite interconnect original. In the embodiment shown, the mask 200 is aligned over the structure 100, which has an opening 210 corresponding to the upper surface of the interconnect element 185. This paper is scaled to the Chinese National Standard (CNS) A4 specification (210X297 mm) 546803 A7 B7 V. Description of the invention (26) In this embodiment, the development is performed like a conventional positive photoresist. After development, the 'second embracing material layer 190 will remain in all areas except the upper surface of the interconnection element 185. Figure 14 shows the structure after development. FIG. 15 shows the structure 10 0 after the introduction of the third element material 2 2 0 on the interconnection element 1 8. In one embodiment, the third element material 220 is a conductive material composed of, for example, a nickel alloy, such as nickel / cobalt (eg, 70% nickel / 3 0% cobalt), which may have additives, for example, incorporated herein by reference. The method of making a product with enhanced material properties ("Method of Making") a Product with Improved Material Properties by Moderate Heat Treatment of a Metal Incorporating a Dilute Additive) "U.S. Patent Application Serial No. 09/2 1 7,5 89 (FFI-P036D1) and published on March 25, 999 As detailed in the corresponding PCT application No. WO99 / 14404, it provides an increased spring force (ie, "spring material") to the interconnecting element 185. In general, the third element material 220 is introduced to a thickness suitable for increasing the spring constant of the interconnection element 185. In one embodiment, the third element material 220 is introduced to a thickness of, for example, approximately .1 mil (approximately 25 // m) to constitute more than 90% of the body of the interconnection element 185. In general, the interconnect element 185 including the third element material 220 defines an interconnect element having a larger spring constant and measurable elasticity (such as a 'spring') than the interconnect element 185 without the third element material 220. The constant generally depends in part on the size of the interconnect element). In embodiments where the interconnecting elements are used to make electrical connections with, for example, contact pads or terminals of electronic components made according to current technology, approximately 0.2 gram-force / nul This paper standard is the general Chinese National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page). · Packing. Ordering economy, printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives 546803 A7 V. Description of invention (27) or greater spring constant Suitable. It should be understood that the desired spring constant may vary depending on the desired application, such as a spring constant between about 0.001 and 10 grams force / mil, and a comparison between about 0.001 and 2 grams force / mil good. These parameters are just examples, because those skilled in the art can make very thin or very thick structures with a wide range of spring constants. It should be understood that the interconnecting element 185 may already have a desired spring constant, even a spring constant between about 0.01 and 10 grams force / mil, thus eliminating the need to include additional spring material. For example, in the embodiment in which the deformation of the above-mentioned interconnecting element is caused by the stress of the relaxation material (for example, reducing the magnitude of the stress in the first element material 170 and the second element material 180), a sufficient spring material The first element material 170 in an amount of, for example, 0.5 to 1 mi 1 (approximately 12 to 2 5 // m). May be introduced, so that it is not necessary to introduce more spring material at this time. In embodiments where the third element material 220 is a nickel alloy such as nickel / cobalt, the third element material 220 may be deposited by several deposition techniques, including but not limited to electroplating, chemical vapor deposition, sputtering deposition, and Electrodeless plating. In one example, the third element material 220 is deposited via an electroplating process. The third element material 220 is typically applied in the form of a commercially available plating solution or plating bath. Second, a current is applied between the interconnect element 185 and the anode of a plating cell (not shown). The negative charge established on the interconnection element 185 causes the metal ions in the plating solution to be reduced to a metallic state, and the third element material 220 is coated on the interconnection element 185. In some cases involving the electrolytic introduction of materials, it may not be appropriate to introduce the third element material 220 by plating the second element material .80 composed of an untreated Ni / Co alloy. Nickel or Ni / Co alloy is generally applicable to China National Standard (CNS) A4 specification (210 X297 mm) for the paper size of the electric mining process (please read the precautions on the back before filling this page) Printed by the consumer cooperative 546803 A7 B7 V. The description of the invention (28) (please read the precautions on the back before filling this page) is not a good receiving surface because it has a tendency to oxidize. Techniques to improve the receptive properties of nickel or NWC alloys include immediately after the introduction of the second element material 180 (for example, before Ni / Co has a significant amount of oxidation), which will range from 10 to 100 microinches μm) A thin layer of copper (C u) is introduced (eg, electroplated) to the second element material 180. Alternatively, after the second element material 180 is introduced, the interconnect element 185 may be placed in a hydrochloric acid (HC1) bath ("stnke bath") to activate the surface of the Ni / Co alloy, and then a third Element material 220 may be introduced. FIG. 16 shows the structure 100 after selective introduction of the contact material 230 on the surface of the third element material 220. 'In one example, the contact material 230 reduces the resistivity of the third element material 220 and provides contact metallurgy to the formed interconnect structure. Suitable contact materials include, but are not limited to, gold (Au), palladium (Pd), rhodium (Rh), and silver (Ag), and alloys thereof. In one embodiment, the contact material 230 is directed to the surface of the third element material 220 to a thickness of about 30 micro-inches (about 0.75 // m). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs FIG. 17 shows the structure 100 after removing the third masking material layer 190. In embodiments where the third masking material layer 190 is a photoresist, the third masking material layer 190 may be removed using conventional methods, such as plasma etching (such as oxygen ashing), laser abrasion, or Wet chemical uranium engraving. After the third masking material layer 190 is removed, an interconnection element 185 having a free standing portion is formed on the substrate 110. In the described embodiment, the interconnect element 185 is a composite interconnect including an active layer 150, a first element material 170, a second element material 180, a third element material 220, and a contact material 230. Connected components. At this time, the structure 100 can be heat-treated to improve the properties of the interconnect element 185. This kind of heat treatment is described in detail. The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 546803 A7 B7. 5. Description of the invention (29) (Please read the precautions on the back before filling this page) The method under review for the assignee of this case, which was filed on February 22, 1998, was "Method for Making Articles with Enhanced Material Properties by Moderate Heat Treatment of Metals Incorporating Diluent Additives (Method of Making a Product with Improved Material Properties by Moderate Heat Treatment of a Metal Incorporating a Dilute Additive) "in U.S. Patent Application Serial No. 09/2 1 7,5 89 (FFI-P036D1). Including, for example, 3 5 A moderate heat treatment at 0 ° C for 10 minutes or at 30 ° C for 60 minutes is used to improve the properties of Ni / Co alloys. As described in this reference document, different heat treatment schedules may be appropriate for different materials. Also, at this time, the exposed portion of the short-circuit layer 130 is removed using, for example, plasma etching (such as oxygen ashing), laser abrasion, or wet chemical uranium etching. Alternatively, the short-circuit layer 130 may be patterned into appropriate traces at this time via a solvent, an etchant, or a mechanical method. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Figure 18 shows the structure 100 after the introduction of the travel stop material 240 above and around the structure. The travel stop material 240 is introduced to limit the travel of the composite interconnect element when the composite interconnect element is in contact with, for example, contact pads or terminals of an electronic component. In an embodiment, referring to FIG. 17, the height h2 of the tip of the composite interconnect element from the surface of the substrate 1 10 is about 5 to 15 mil (about 250 to 4 00 // m). The desired amount of deflection of the interconnect element 185 can be determined to be about 3 mil (.about 75 // m). Therefore, in one embodiment, the travel stop material 240 is deposited to a thickness of about 2 to 12 nul (about 50 to 300 μm) so that the height h2 of the interconnection element 185 above the travel stop material 24 is approximately 3mil (about 7 5 // m). In one embodiment, the travel stop material 2 40 is a non-conductive material, such as Siguang imaging material, such as commercially available from the paper size of Massachusetts, which is applicable to the Chinese National Standard (CNS) A4 specification (2ι〇′χ297). (Ch) -32- 546803 A7 B7 V. Description of the invention (30) (Please read the notes on the back before filling in this page) N ewt ο η of Micr ◦ C hem C 〇r ρ 〇rati ο η is negative Light anti-hunger agent SU-8. Other materials for the travel stop material 240 include silicon nitride or sand oxynitride or Probelec® from Ciba Specialty Chemicals (Basil, Switzerland, www.cibasc.com). A detailed discussion of suitable travel stop configurations and their use can be found in the Common Assignment dated July 13, 1988, entitled "Interconnected Assemblies and Methods (Interconnected Assemblies and Methods) and Methods) "U.S. Patent Application Serial No. 09/1 1,5,86, and the corresponding PCT Application No. US99 / 00322 filed on January 4, 999. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. After the correct amount of the travel stop material 240 is introduced onto the substrate 110, the travel stop material 240 is patterned. In the example of the negative photoresist, the travel stop material 2 40 is exposed through a mask, so that the area surrounding the anchor portion 1 12 is exposed. Since the travel stop material 240 is a negative photoresist, those areas that are not exposed due to the mask are developed to remove the photoresist (while the exposed portion of the photoresist remains). Fig. 19 shows the structure 100 of the travel stop material 240 after it has been patterned on a portion of the substrate 1 10 including the anchoring portion 12 of the interconnecting element 185. In this embodiment, the travel stop material 2 40 may allow the interconnection element 185 to deflect toward the substrate 110 with some restrictions. For example, when a second electronic component is pointed at the substrate 110, the electronic component is stopped by the travel stop material 240. Figure 20 shows an interconnect element 185 without an overcoat layer 2 50 made of contact material, such as electrodeless gold (A, applied to several micro-inches (approximately 1 to 10 / m). u). This can improve the conductive properties of the interconnected components (eg reduce impedance) and give additional resistance to erosion. It should be understood that the coating layer 25 0 is implemented here. The paper size is generally Chinese National Standard (CNS) A4 (210 X297 mm) 546803 A7 B7. 5. Description of the invention (31) The example is selective. (Please read the notes on the back before filling out this page.) In the described embodiment, the interconnect element 1 8 is a composite interconnect element. It should be understood that the interconnect element 185 formed by the cores of the first element material 170 and the second element material 810 may be sufficient for some applications, and thus does not need to introduce additional elastic materials (such as the third element material 22). ). Such interconnect elements can be defined as having an overcoat layer composed of a contact material, such as Au. At the same time, it should be understood that additional component materials may be added in addition to the third component material 220, for example, to increase the flexibility of the interconnect element. In this manner, processing steps similar to those described with the introduction of the third element material 220 may be used. In those cases, there is generally no need to worry too much about damaging the interconnect elements when an additional layer of masking material is applied, so more traditional masking material forms can be utilized. The Economics / Ministry of Intellectual Property Bureau employee consumer cooperative prints Figures 2 to 2 7 show another embodiment of forming an interconnecting element according to the present invention 'which starts from the structure shown in Figure 6, where it is laid on the activation layer 1 50. The first element material 170 on the upper surface is patterned according to the pattern established by the second masking material layer 160. In one example, the first element material 170 is a thermally stable material, such as a Pd / Co alloy. In FIG. 22, the second masking material layer 160 is removed, for example, by oxygen plasma etching (e.g., oxygen ashing), wet chemical etching, or laser abrasion. Fig. 23 shows the structure 100 after the introduction of the shape memory alloy (sMA) material 380. SMA is a group of metallic materials that exhibits the ability to return to a previously defined shape or size when subjected to a suitable procedure that is typically a thermal procedure. This material can restore large strains or generate significant forces when changing shape. Certain nickel / titanium alloys and copper-based alloys meet this requirement. The paper size of copper 34 is universal Chinese National Standard (CNS) A4 specification (210X297 mm) 546803 A7 B7 V. Invention Description (33) (Please read the precautions on the back before filling this page) The structure is subject to SM A The material 380 is heat-treated at a temperature equal to or higher than the transformation temperature of the Vossian bulk phase. Above the transition temperature, the SM A material 3 80 will deform toward its memory state, thereby shrinking the film. Through bimorphic or bimetallic action, the ends of the composite beam of the SMA material 3 80 and the first element material 170 will bend towards its base in this case. In this way, it is possible to achieve the desired curvature of the interconnecting elements, such as a height h 4 of about 8 m 11 (about 2 0 0 // m) from the surface of the substrate 1 10. In some cases, it may be desirable to limit the magnitude of the curvature of the interconnecting elements by, for example, the curvature stops described above with reference to Figure 11 and related text. In the above embodiment / SM A material 3 80 becomes a memory state transition to a thermal transition. It should be understood that additional external stimuli, such as changes in pressure or radiation, can be used to produce transformations. In the case of thermal transformation at an elevated temperature, the temperature treatment that generates such a thermal transformation can be extended to anneal the first element material 170 to modify the stress of the material and increase the stability of the deformed material. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs after the SM A material 3 80 is transformed to its memory state and the first component material 17 is deformed. In one example, the SM A material 3 80 may be removed, leaving behind The interconnection element composed of the first element material 1 70 (and the activation layer 150). In one case, the SMA material 380 can be removed directly by plasma or chemical etching or laser abrasion. Alternatively, in the case where an adhesive is used between the SMA material 3 80 and the first element material 170, the adhesive may be dissolved to separate the SMA material 3 80 from the first element material 170. FIG. 27 shows the resulting scab, in which the SMa material 3 80 is removed 'leaving the interconnected element composed of the first element material 170. In another embodiment, the SMA material may persist. The rigidity of the SMA material contributes to the overall spring constant. It gives a high enough 36- without paper-feeding. The paper size is generally Chinese National Standard (CNS) A4 (210x297 mm). 546803 A7 ___ B7 ___ 5. Description of the invention (34) Spring constant. (Please read the notes on the back before filling this page) The thickness of the SM A material can be separately selected to deflect a relatively thick beam (Material 170). This thick beam can be adjusted to maintain this new shape 'and the SM material can be removed, so that the resulting structure will have a sufficiently high spring constant. FIG. 28 shows a final structure formed according to this embodiment. This structure is similar to that shown in FIG. 20 and shows a cross-sectional side view of three interconnecting elements formed on the surface of the substrate 110. Each interconnect element includes a first element material 170 and a third element material 220 composed of, for example, a nickel alloy such as Ni / Co (e.g., 70% Ni / 30% Co), which may have additives to provide interconnect elements Increased spring force (aka "spring material"). In general, the third element material 220 is introduced to a thickness suitable for increasing the spring constant of the interconnecting element to a suitable level. A thickness of more than 90% forming the body of the interconnect element on the order of about 1 nnl (about 25 // m) is suitable according to current technology. Figure 28 also shows a selective contact material 230 introduced to a thickness of about 30 micro-inches (about 0.7 5 // m), which is made of, for example, gold (Au), palladium (Pd) '鍩 ( R h), and silver (A g), and its alloy composition. Figure Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs also shows selective contact materials, such as electrodeless gold (Au) coated to several micro-inches (approximately 1 to 10 // m). Finally, Fig. 28 shows a selective travel stop material 240 that can be used to limit the deflection of the interconnecting elements in one case. The introduction of each of these materials is similar to that described above with reference to Figures 12 to 20 and related text. The foregoing description shows, among other things, the manufacture of interconnecting elements that have extremely desirable shapes and spring constants. Manufacturing technology uses the standard of this paper to apply f Guan Xuzhan (CNS) A4 specifications (21GX297 mm) ------ 546803 A7 B7 V. Description of the invention (3 bows can change the behavior of certain metal materials in response to Deformation caused by external stimuli (such as heat) to form improved interconnect elements. (Please read the notes on the back before filling out this page.) The interconnect elements described here are suitable for many uses, including but not limited to electronics Components are used together to make temporary or permanent contacts, or temporary and permanent contacts to electronic components. Such contacts can be used, for example, in manufacturing processes that form integrated circuit wafers or dies. For example, the interconnections of the present invention Components can make temporary contact with individual or non-single wafer or die contact pads that are part of a "bunvin" and / or functional test of the wafer or die. An example of a permanent connection is where it may include When used to form a temporarily connected connection element under a test wafer or die, the connection element of the present invention is used to electrically connect the wafer or die to, for example, a package. System components (such as PCBs). The printed manufacturing process of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is described in detail in, for example, commonly assigned U.S. Patent No. 5,829,128, incorporated herein by reference. The connection element may be used in a test device, for example, extending from a substrate of a space transformer such as a probe card or a probe card into a probe for testing electronic components such as US Patent No. 5,829,128 and also by As described in commonly assigned U.S. Patent No. 5,974,662, incorporated herein by reference. The interconnect element of the present invention can also be used in insert applications to connect two electronic components, such as U.S. Patent No. 5,829,128. As described in US Patent No. 5,829,1 28, an interconnection element directly connected to a semiconductor die (such as a bonding pad) is also described without corresponding packaging. The interconnection element described here is equally suitable for For this application, the commonly assigned U.S. Patent No. 5,772,45 No. 1 incorporated herein by reference describes a paper size suitable for the paper size applicable here to the Chinese National Standard (CNS) A4 (210x 297 mm) (%) -38- 546803 A7 B7 5. The socket application of the interconnection application described in the invention description (36) to allow electronic components (such as semiconductor packages) to be releasably mounted on a circuit board. An example is connection to the first substrate The interconnect elements are connected to corresponding contact nodes on a second substrate (such as a support substrate) via pressure connection. The second contact nodes include external connection points to integrate the entire assembly (such as the first and second substrates). ) Is connected to a corresponding third contact node on a third substrate such as a circuit board. In the above detailed description, the present invention is described with reference to its specific embodiment. However, it is obvious that Various modifications and changes can be made to the invention without departing from the broader spirit and scope of the invention as defined by the scope of the patent application. Therefore, the description and drawings should be regarded as illustrative rather than restrictive. (Please read the precautions on the back before filling this page)

、1T 經濟部智慧財產局員工消費合作社印製 ^紙張尺度適用中國國家標準(CNS ) A4規格（210X297公釐） -39_, 1T Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -39_

Claims (1)

546803 ABCD 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 附件4A··第901Q8G14號專利申請案 中文申請專利範圍替換本 民國92年2月14日修正 1. 一種互連元件，包含： 一第一元件材料，可連接於一基板；及 一第二元件材料，連接於該第一元件材料； 其中該第一元件材料及該第二元件材料之一包含一具 有可轉變性質的材料，使得在轉變時，該互連元件的形狀 被修改。 . 2·如申請專利範圍第1項所述的互連元件，其中該互連 元件具有適合用來直接接觸一半導體裝置的尺寸。 3 ·如申請專利範圍第1項所述的互連元件，其中該第一 元件材料及該第二元件材料之一的轉變爲不可逆的。 4. 如申請專利範圍第1項所述的互連元件，其中該可轉. 變性質爲使得該材料的一第一體積可轉變成一不同的第二 體積。 5. 如申請專利範圍第4項所述的互連元件，其中該第一 元件材料及该第一元件材料的形狀被配置成使得該第二元 件材料敷設在該第一元件材料上，並且該第二元件材料的 第一體積大於第二體積。 一 6·如申請專利範圍第4項所述的互連元件，宜中該第〜 元= 才料爲熱穩定材料，並且該第二元件材料從第—體積 至弟一體積的轉變爲該第二元件材料暴露於熱的結果。 7.如申請專_圍第6項所述的互連元件，其中該轉變 本纸張尺度適家標準（儀7^(· 2ΐ〇χ297々董）-----；-__ , •衣------II------0 (請先閱讀背面之注意事項再填寫本頁) A8 B8 C8 D8 Γ、申請專利範圍 包含該第〜于杜Μ必丨^ 〜兀件材料的可轉變的體積改變的至少大約90%。 一 、，申邮專利範圍第1項所述的互連元件，其中該第一 材料及該弟一元件材料的每一個都具有可轉變性質。 一 如申請專利範圍第1項所述的互連元件，其中該第一 元件材料兒$错__^ r 口乂弟一兀件材料的至少之一是藉著電鍍而被引 入。 一 1 0 ·如申請專利範圍第1項所述的互連元件，其中該第一 元件材料及該第二元件材料的至少之一是藉著濺射而被引入0 ----------- 奢 f (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 η·如申請專利範圍第1項所述的互連元件，其中 元件材料及該第二元件材料的至少之一是藉著無電 而被引入。 12·如申請專利範圍第3項所述的互連元件，其中 元件材料包含鈀或其合金。 1 3 ·如申請專利範圍第4項所述的互連元件，其中 兀件材料爲包含鈀/鈷的合金，並且該第二元件材料 及鎳之一。 1 4.如申請專yj範圍第1 3項所述的互連元件，其 二元件材料更包含鎳。 1 5 ·如申請專利範圍第丨3項所述的互連元件，其 二元件材料包含鎳合金。 1 6.如申請專利範圍第丨項所述的互連元件，其中該第一 元件材料及該第二元件材料之〜包含一形狀記憶合金。 1 7 ·如申請專利範圍第1 6項所述的互連元件，其中該第 該第一 極電鍍 該第一 該第一 包含銅 中該第 中該第 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（ 2- 546803 A8 B8 C8 D8 六、申請專利範圍 二元件材料包含該形狀記憶合金，並且敷設在該第一元件 材料上。 1 8 ·如申請專利範圍第1項所述的互連元件，其中該可轉 變性質爲應力，並且該轉變減小該材料的應力的大小。 1 9 ·如申請專利範圍第丨8項所述的互連元件，其中該第 一元件材料包含具有可轉變性質的該材料，並且該第二元 件材料具有一拉伸應力，其中在轉變時，變形包含對該第 二元件材料的該拉伸應力的響應。 2 0 .如申請專利範圍第丨9項所述的互連元件，其中該第 一兀件材料爲熱穩定材料，並且該第一元件材料的轉變爲 .該第一元件材料暴露於熱的結果。 21.如申請專利範圍第18項所述的互連元件，其中該第 一元件材料包含具有可轉變性質的該材料，並且該第二元 件材料具有一壓縮應力，其中在轉變時，變形包含對該第 二元件材料的該壓縮應力的響應。 22·—種電子組件，包含： 一基板，具有多個接觸結點；及 多個自由站立彈性互連元件，連接於該基板成爲使得 一互連兀件的一基座電接觸該接觸結點中相應的一個，並 且該互連元件包含： 一第一元件材料，可連接於基板；及 一第一兀件材料，連接於該第一元件材料； 其中該第一元件材料及該第二元件材料之一包含一具 有可轉變性質的材料，使得在轉變時，該互連元件的形狀 . : 會II (請先閱讀背面之注意事項再填寫本頁) 、1T 經濟部智慧財產局員工消費合作社印製546803 ABCD Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs VI. Application for Patent Scope Annex 4A ·· No. 901Q8G14 Patent Application Chinese Application for Patent Scope Replaces February 14, 1992 Amendment 1. An interconnect element, including: A first element material can be connected to a substrate; and a second element material can be connected to the first element material; wherein one of the first element material and the second element material includes a material having a transformable property, So that the shape of the interconnection element is modified during the transition. 2. The interconnection element according to item 1 of the patent application scope, wherein the interconnection element has a size suitable for directly contacting a semiconductor device. 3. The interconnection element according to item 1 of the scope of patent application, wherein the transformation of one of the first element material and the second element material is irreversible. 4. The interconnection element according to item 1 of the scope of patent application, wherein the reversible property is such that a first volume of the material can be transformed into a different second volume. 5. The interconnection element according to item 4 of the scope of patent application, wherein the first element material and the shape of the first element material are configured such that the second element material is laid on the first element material, and the The first volume of the second element material is greater than the second volume. -6. The interconnection element as described in item 4 of the scope of the patent application, it is preferable that the first element is a thermally stable material, and the second element material is changed from the first volume to the first volume to the first volume. The two element materials are the result of exposure to heat. 7. The interconnection element according to item 6 of the application, wherein the paper standard is changed to a family standard (Yi 7 ^ (· 2ΐ〇χ297々 董) -----; -__, • clothing ------ II ------ 0 (Please read the notes on the back before filling in this page) A8 B8 C8 D8 Γ, the scope of patent application includes the ~~ Du Ｍ 必 丨 ^ ~ element materials At least about 90% of the changeable volume can be changed. First, the interconnection element described in the first patent application scope, wherein each of the first material and the first element material has a transformable property. The interconnection element according to item 1 of the scope of patent application, wherein the first element material is at least one of the material of the first element is introduced by electroplating.-1 0 · The interconnection element according to item 1 of the scope of patent application, wherein at least one of the first element material and the second element material is introduced by sputtering 0 ----------- Luxury f (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs η · Interconnected components as described in item 1 of the scope of patent application, At least one of the middle element material and the second element material is introduced by electricity. 12. The interconnection element according to item 3 of the scope of patent application, wherein the element material includes palladium or an alloy thereof. 1 3 The interconnection element according to item 4 of the scope of the patent application, wherein the element material is an alloy containing palladium / cobalt and one of the second element material and nickel. 1 4. As described in item 13 of the scope of application The interconnect element of the second element further includes nickel. 1 5 · The interconnect element described in item 3 of the scope of patent application, and the second element material includes nickel alloy. 1 6. According to the scope of the scope of patent application The interconnect element described above, wherein the first element material and the second element material include a shape memory alloy. 1 7 · The interconnect element according to item 16 of the patent application scope, wherein the first Electroplating the first, the first containing copper, the first, the first, and the second paper size are applicable to the Chinese National Standard (CNS) A4 specifications (2- 546803 A8 B8 C8 D8) Sixth, the scope of the patent application Two component materials include the shape memory alloy And apply On the first element material. 1 8 · The interconnect element according to item 1 of the patent application scope, wherein the transformable property is stress, and the transition reduces the magnitude of the stress of the material. 1 9 • As applied The interconnection element according to item 8 of the patent, wherein the first element material includes the material having transformable properties, and the second element material has a tensile stress, and during the transformation, the deformation includes Response of the tensile stress of the two element materials. 20. The interconnect element according to item 9 of the patent application scope, wherein the first element material is a thermally stable material, and the first element material is transformed into The result of the first element material being exposed to heat. 21. The interconnecting element according to item 18 of the scope of patent application, wherein the first element material includes the material having transformable properties, and the second element material has a compressive stress, and during the transformation, the deformation includes Response of the second element material to the compressive stress. 22 · —An electronic component comprising: a substrate having a plurality of contact nodes; and a plurality of free standing elastic interconnection elements connected to the substrate so that a base of an interconnection element electrically contacts the contact nodes One of the corresponding ones, and the interconnection element includes: a first element material connectable to the substrate; and a first element material connected to the first element material; wherein the first element material and the second element One of the materials contains a material that has transformable properties, so that the shape of the interconnecting element is changed during the transition.: Hui II (Please read the precautions on the back before filling out this page), 1T Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Print 546803 A8 B8 C8 ____ _ D8 ___ 六、申請專利範圍 可被修改。 23·如申請專利範圍第22項所述的電子組件，另外包含 (請先閱讀背面之注意事項再填寫本頁) 與該基板相關聯的多個導電訊號線；且 在連接於該基板的該多個自由站立彈性互連元件中， 該互連元件的基座電接觸該多個訊號線中相應的一個以及 一互連元件。 24·如申請專利範圍第22項所述的電子組件，其中該第 一元件材料及該第二元件材料之一的轉變爲不可逆的。- 25·如申請專利範圍第24項所述的電子組件，其中該可 轉變性質爲使得該第二元件材料的一第一體積可轉變成·爲 一不同的第二體積。 2 6 .如申請專利範圍第2 5項所述的電子組件，其中該互 連元件的一自由部份最初被固定於該基板，並且當該自由 部份從該基板被釋放時，該自由部份可響應該第二元件材 料從該第一體積至該第二體積的轉變而被偏壓離開該基板 〇 經濟部智慧財產局員工消費合作社印製 2 7 ·如申請專利範圍第2 6項所述的電子組件，其中該互 連元件的該第一元件材料及該第二元件材料的形狀被配置 成使得該第二元件材料敷設在該第一元件材料上，並且該 第一體積大於該第二體積。 .28·如申請專利範圍第27項所述的電子組件，其中該第 一兀件材料爲熱穩定材料，並且該第二元件材料從該第一 體積至該第二體積的轉變爲該第二元件材料暴露於熱的結 I紙張尺度適用中國國家標準（CNS ) A4規格ϋ〇>< 297公釐) -— 546803 經濟部智慧財產局員工消費合作社印製 •、申請專利範圍 果0 A8 B8 C8 D8 2 9 .如申§嗇亩；^丨丨^ 阳”利範圍第28項所述的電子組件，其中該轉 變包含該第 兀件材料的可轉變的體積改變的至少大約90 % 3 0 ·如申i畜亩m /r>v _ 咕'^利範圍第22項所述的電子組件，其中該第 元件材料殆辞楚Γ —— 乂 W弟一兀件材料的每一個都具有可轉變性質 3 1 ·如申請專利範圍第2 2項所述的 兀件材料及該第二元件材料的至少 引入。 3 2·如申請專利範.圍第22項所述的 一兀件材料及該第二元件材料的至少 引入。 33.如申請專利範.圍第22項所述的 一元件材料包含鈀。 3 4 ·如申請專利範圍第2 2項所述的 二元件材料敷設在該第一元件材料上 另外包含連接於該第二元件材料的一 料包含該互連元件的至少大約9〇%。 35.如申請專利範圍第34項所述的 簧材料包含鎳合金。 36·如申請專利範圍第34項所述的 連元件另外包含相鄰於該彈養材料白勺 電子組件， 之一是藉著 電子組件， 之一是藉著 其中該第 電鍍而被 其中該第 濺射而被 電子組件，其中該第 電子組件 ，並且每 彈簧材料 其中該第 互連元件 該彈簧材 電子組件，其中該彈 電子組件 一表面的 其中該g 接觸材料 ------------ (請先閱讀背面之注意事項再填寫本頁) 、1T -5- 546803 8 8 8 8 ABCD $、申請專利範圍 37 ·如申請專利範圍第22項所述的電子組件，其中該第 一元件材料及該第二元件材料之一包含〜形狀記憶合金。 (請先閱讀背面之注意事項再填寫本頁) 38·如申請專利範圍第22項所述的電子組件，其中該可 轉變性質爲應力，並且該轉變減小該材料的應力的大小。 39.如申請專利範圍第38項所述的電子組件，其中該第 一兀件材料包含具有可轉變性質的該材料，並且該第二元 件材料具有一拉伸應力，其中在轉變時，變形包含對該第 一元件材料的該拉伸應力的響應。 40·如申請專利範圍第39項所述的電子組件，其中該第 二元件材料爲熱穩定材料，並且該第一元件材料的轉變爲 該第一元件材料暴露於熱的結果。 4 1 ·如申請專利範圍第3 8項所述的電子組件，其中該第 一元件材料包含具有可轉變性質的該材料，並且該第二元 件材料具有一壓縮應力，其中在轉變時，變形包含對該第 二元件材料的該壓縮應力的響應。 4 2 .如申請專利範圍第2 2項所述的電子組件，其中該多 個自由站立彈性互連元件連接於該基板的一個以上的表面 〇 經濟部智慧財產局員工消費合作社印製 43·如申請專利範圍第22項所述的電子組件，其中該多 個接觸結點包含一第一接觸點，電子組件更包含： 連接於該多個結點的至少之一的至少一重新分佈線， 其中相應的至少一互連元件連接於與該第一接觸點不 同的一第二接觸點，該第二接觸點與該第一接觸點經由該 至少一重新分佈線而連接。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -6- 546803 A8 B8 C8 D8 六、申請專利範圍 44.如申請專利範圍第22項所述的電子組件，其中該基 板包含半導體，陶瓷，有機，及金屬材料之一。 (請先閱讀背面之注意事項再填寫本頁) 4 5 ·如申請專利範圍第2 2項所述的電子組件，其中該基 板包含一插入物（i n t e 1· ρ 〇 s e 1·)。 46.如申請專利範圍第22項所述的電子組件，其中該基 板包含一探針卡的一組件。 47·如申請專利範圍第22項所述的電子組件，其中該基 板包含用來將電子組件可釋放地連接至一第二電子組件的 一插座。 . 48·—種基板的電子互連總成，包含： 一第一基板，具有形成在該第一基板上的多個第一接 觸結點，以及多個自由站立彈性互連元件，該多個自由站 立彈性互連元件連接於該第一基板成爲使得一互連元件的 基座彈性接觸該多個第一接觸結點中相應的一個；及 一第二基板，具有多個第二接觸結點； 其中該互連元件包含： 一第一兀件材料，可連接於基板；及 經濟部智慧財產局員工消費合作社印製 一第二元件材料，連接於該第一元件材料，並且該第 —元件材料及該第二元件材料之一包含一具有可轉變性質 的材料’使得在轉變時，該互連元件的形狀被修改； 其中該互連元件具有可移動至該互連元件與一第二接 觸結點接觸的一第一位置的一部份。 4 9 ·如申請專利範圍第4 8項所述的總成，其中該總成爲 一探針卡總成的一部份。 本紙張尺度適用巾國國家標準（CNS )八4驗（21〇><297公羡） - 546803 A8 B8 C8 D8 夂、申請專利範圍 5 〇 ·如申請專利圍第4 8項所述的總成，其中該總成爲 一晶圓位準測試總成的一部份。 (請先閲讀背面之注意事項再填寫本頁) 5 1 ·如申請專利範圍第4 8項所述的總成，其中該第二基 板爲一電路板。 5 2.如申請專利範圍第48項所述的總成，其中該總成爲 一插座的一部份，並且該第二接觸結點包含外部連接點。 5 3 ·如申請專利範圍第5 2項所述的總成，另外包含爲具 有多個第三接觸結點的電路板的一第三基板， 其中該外部連接點與該第三接觸結點對準，以將·封裝 連接於該第三基板。 54.如申請專利範圍第48項所述的總成，另外包含設置 在該第一基板上且界定該第一位置的一止動結構。 5 5·如申請專利範圍第48項所述的總成，其中該第一元 件材料及該第二元件材料之一的轉變爲不可逆的。 5 6 ·如申請專利範圍第5 5項所述的總成，其中該可轉變 性質爲使得該材料的一第一體積可轉變成爲一不同的第二 體積。 經濟部智慧財產局員工消費合作社印製 5 7 ·如申請專利範圍第5 6項所述的總成，其中該互連元 件的一自由部份最初被固定於該第一基板，並且當該自由 部份從該第一基板被釋放時，該自由部份可響應該第二元 件材料從該第一體積至該第二體積的轉變而被偏壓離開該 第一基板。 5 8.如申請專利範圍第57項所述的總成，其中該互連元 件的該第一元件材料及該第二元件材料的形狀被配置成使 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公楚） 546803 A8 B8 C8 D8 六、申請專利範圍 - --- 得該第二元件材μ m ~抖敷設在該第一元件材料上，並且該第一 體積大於該第二體積。 (請先閱讀背面之注意事項再填寫本頁) 5 9 ·如申rR專利範圍第5 8項所述的總成，其中該第一元 件材2爲熱fe疋材料，並且該第二元件材料從該第一體積 口〆第~體積的轉變爲該第二元件材料暴露於_的結果。 60·如申§靑專利範圍第59項所述的總成，其中該轉變包 a 第一元件材料的可轉變的體積改變的至少大約。 6 1.如申請專利範圍第48項所述的總成，其中該第一元 件材料及談第一元件材料的每一個都具有可轉變性質。 6 2.如申請專利範圍第48項所述的總成，其中該第一元 件材料及该弟—元件材料的至少之一是藉著電鍍而被引.入 〇 63.如申請專利範圍第48項所述的總成，其中該第一元 件材料及该第一元件材料的至少之一是藉著濺射而被引入 〇 64·如申請專利範圍第48項所述的總成，其中該第一元 件材料包含鈀。 經濟部智慧財產局員工消費合作社印製 65. 如申請專利範圍第48項所述的總成，其中該第二元 件材料敷設在該第一元件材料上，並且該互連元件另外包 含連接於該第二元件材料的一彈簧材料，該彈簧材料包含 該互連元件的至少大約9 〇 %。 66. 如申請專利範圍第65項所述的總成，其中該彈簧材 料包含鎳合金。 67. 如申請專利範圍第65項所述的總成，其中該互連元 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公董） 9 546803 A8 B8 C8 ____ D8 六、申請專利範圍 " 〜 ~ "^-- 件另外包含相鄰於該彈簧材料的一表面的一接觸材料。 68·如申請專利範圍第48項所述的總成，其中該第〜元 件材料及該第二元件材料之一包含〜形狀記憶合金。 (請先閱讀背面之注意事項再填寫本頁) 6 9.如申請專利範圍第48項所述的總成，其中該可轉變 性質爲壓縮應力，並且該轉變減小該材料的壓縮應力。 7 〇 ·如申請專利範圍第6 9項所述的總成，其中該第一元 件材料包含具有可轉變性質的該材料，並且該第二元件材 料具有一拉伸應力，其中在轉變時，變形包含對該第二元 件材料的該拉伸應力的響應。 7 1 ·如申請專利範圍第7 0項所述的總成，其中該第二元 件材料爲熱穩定材料.，並且該第一元件材料的轉變爲該第 一元件材料暴露於熱的結果。 7 2 ·如申請專利範圍第6 9項所述的總成，其中該第一元 件材料包含具有可轉變性質的該材料，並且該第二元件材 料具有一壓縮應力，其中在轉變時，變形包含對該第二元 件材料的該壓縮應力的響應。 經濟部智慧財產局員工消費合作社印製 7 3 ·如申請專利範圍第4 8項所述的總成，其中該多個自 由站立彈性互連元件連接於該基板的一個以上的表面。 74·如申請專利範圍第48項所述的總成，其中該第一基 板上的該多個第一接觸結點的每一個終止在第一接觸點處 ，該總成更包含： 連接於該多個第一接觸結點的至少之一的至少一重新 分佈線， 其中相應的至少一互連元件連接於與該第一接觸點不 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） -10- 546803 8 8 8 8 ABCD 六、申請專利範圍 同的一第二接觸點，該第二接觸點與該第一接觸點經由該 至少一重新分佈線而連接。 (請先閱讀背面之注意事項再填寫本頁) 7 5 ·如申請專利範圍第48項所述的總成，其中該第一基 板包含半導體，陶瓷，有機，及金屬材料之一。 7 6 · —種用來接觸包含一總成的電子裝置的系統，包含 一第一基板，具有形成在該第一基板上的多個第一接 觸結點，以及多個自由站立彈性互連元件，該多個自由站 立彈性互連元件連接於該第一基板成爲使得一互連元件的 基座彈性接觸該多個第一接觸結點中相應的一個；及 一第二基板，具有多個第二接觸結點； 其中該互連元件包含： 一第一元件材料，可連接於基板；及 一第一兀件材料，連接於該第一元件材料，並且該第 一元件材料及該第二元件材料之一包含一具有可轉變性質 的材料，使得在轉變時，該互連元件的形狀被修改； 經濟部智慧財產局員工消費合作社印製 其中該互連元件具有可移動至該互連元件與一第二接 觸結點接觸的一第一位置的一部份。 77·如申請專利範圍第76項所述的系統，其中該系統包 含一積體電路測試系統，並且該總成爲一探針卡總成的一 部份。 .78·如申請專利範圍第76項所述的系統，其中該系統爲 一基板安裝系統。 7 9 .如申請專利範圍第7 8項所述的系統，其中該第一其 本紙張尺度適用中國國家標準（CNS ) ( 21GX297公釐)—'~'一 ---- 546803 A8 B8 C8 D8 六、申請專利範圍 板爲一電路板。 80.如申請專利範圍第7 8項所述的系統，其中該總成爲 一插座的一部份，並且該第二接觸結點包含外部連接點。 8 1 ·如申請專利範圍第80項所述的系統，其中該總成另 外包含爲具有多個第三接觸結點的電路板的一第三基板， 其中該外部連接點與該第三接觸結點對準，以將封裝 連接於該第二基板。 8 2.如申請專利範圍第76項所述的系統，另外包含設置 在該第一基板上且界定該第一位置的一止動結構。 83·—種形成一互連結構的方法，包含： 引入連接於一基板的一互連元件，該互連元件包含一 第一元件材料及一第二元件材料； 在一端部處從該基板釋放該互連元件；及 轉變該第一元件材料及該第二元件材料之一的性.質，. 以修改該互連元件的形狀。 8 4 ·如申請專利範圍第8 3項所述的方法，其中該轉變包 含轉變該第一元件材料及該第二元件材料的每一個的性質 〇 8 5 .如申I靑專利範圍第8 3項所述的方法，其中該互連元 件在該轉變之前從該基板被釋放。 8 6 ·如申請專利範圍第8 3項所述的方法，其中該轉變包 含加熱該互連元件。 8 7 ·如申請專利範圍第8 3項所述的方法，其中該轉變包 含改變該第一元件材料及該第二元件材料之一的體積。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -I” · 9—I (請先閱讀背面之注意事項再填寫本頁) '1T 經濟部智慧財產局員工消費合作社印製 -12- 546803 A8 B8 C8 D8 六、申請專利範圍 (請先閱讀背面之注意事項再填寫本頁) 8 8·如申請專利範圍第83項所述的方法，其中該轉變包 含將該互連元件的端部從一第一位置偏壓至離開該基板的 表面的距離較大的一第二位置。 89·如申請專利範圍第88項所述的方法，另外包含限制 該互連元件的該端部的該轉變偏壓。 9 0.如申請專利範圍第88項所述的方法，其中該可轉變 性質包含應力，並且該轉變包含減小該應力的大小。 91·如申請專利範圍第88項所述的方法，另外包含： 在該互連元件上引入具有彈性性質的一第三元件材料 〇 9 2.如申請專利範圍第9 1項所述的方法，其中該互連元 件連接於該基板的一表面，並且該第三元件材料被引入在 相反於該基板表面的該互連元件的一表面上，引入該第三 元件材料的方法包含： 在該基板上定圖型一掩蔽材料成爲具有暴露該互連元 件的該表面的一開口；及 將S亥第三元件材料引入至該互連元件的暴露表面。 經濟部智慧財產局員工消費合作社印製 9 3.如申請專利範圍第92項所述的方法，其中該第三元 件材料爲抗電泳材料。 9 4 ·如申請專利範圍第9 2項所述的方法，其中該第三元 件材料是藉著電鍍製程而被引入。 9 5 .如申請專利範圍第8 7項所述的方法，其中該第二元 件材料是在相反於該基板之側連接於該第一元件材料，並 且該第二元件材料包含該可轉變性質，該方法另外包含： 本[張尺度iiTii家標準（CNS) ^格（210x297公釐）--: 546803 A8 B8 C8 D8 六、申請專利範圍 在轉變該性質之後，移除該第二元件材料。 (請先閱讀背面之注意事項再填寫本頁) 9 6.如申請專利範圍第95項所述的方法，其中該第二元 件材料包含一形狀記憶合金，並且產生互連元件包含將該 第一兀件材料以麻田散體狀態引入，且轉變該第二元件材 料的性質包含將該第二元件材料轉變爲記憶狀態，該第二 兀件材料在該記憶狀態具有與在該麻田散體狀態的體積不 同的體積。 9 7 ·如申gR專利軺圍第9 6項所述的方法，其中在轉變性 質之後，該方法另外包含： 將該互連元件退火。 9 8 ·如申請專利範.圍第8 3項所述的方法，另外包含： 在轉變之後’在該互連元件的該釋放端部處將該基板 連接於在一電子組件上的接觸結點。 9 9 ·如申請專利範圍第9 8項所述的方法，另外包含： 在連接之後，測試該基板及該電子組件之一。 經濟部智慧財產局員工消費合作社印製 1〇〇·如申請專利範圍第99項所述的方法，其中該電子組 件包含一晶粒’並且該互連元件的該釋放端部連接於該晶 粒的一接合墊。 101 · —種形成一互連結構的方法，包含： 在一基板上定圖型一掩蔽材料成爲具有對於形成在該 基板上的一接觸結點的一開口； 產生一互連元件，其具有連接於該接觸結點的一基座 ，以及在該掩蔽材料的一部份上延伸的一自由端，該互連 元件包含一第一元件材料及一第二元件材料； 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公董） -14 - 546803 A8 B8 C8 D8 六、申請專利範圍 移除該掩蔽材料；及 (請先閱讀背面之注意事項再填寫本頁) 轉變該互連兀件的該第一元件材料及該第二元件材料 之一的性質，以修改該互連元件的形狀。 1〇2.如申請專利範圍第1 〇 1項所述的方法，其中該轉變 包含轉變該第一兀件材料及該第二元件材料的每一個。 1 0 3 ·如申請專利範圍第1 〇 1項所述的方法，其中該轉變 包含將該互連元件加熱至一溫度。 1 04 .如申請專利範圍第1 〇丨項所述的方法，其中該轉變 產生該第一元件材料及該第二元件材料之一的體積改變。 1 0 5 ·如申請專利範圍第1 〇 1項所述的方法，其中可轉變 的性質包含應力，並且該轉變包含修改該應力的大小。’ 1 0 6.如申請專利範圍第丨〇丨項所述的方法，其中該轉變 將該互連元件的該自由端從一第一位置偏壓至離開該基板 的表面的距離較大的一第二位置。 1 0 7 .如申請專利範圍第1 〇 6項所述的方法，另外包含限 制該互連元件的該自由端的該轉變偏壓。 經濟部智慧財產局員工消費合作社印製 108.如申請專利範圍第1〇1項所述的方法，另外包含： 在該互連元件上引入具有彈性性質的一第三元件材料 〇 109·如申請專利範圍第1〇8項所述的方法，其中該第三 元件材料的引入包含電鍍一導電合金。 1 10·如申請專利範圍第108項所述的方法，該互連元件 連接於該基板的一表面，並且該第三元件材料被引入在相 反於該基板表面的該互連元件的一表面上，引入該第三元 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -15 546803 A8 B8 C8 D8 夂、申請專利範圍 件材料的方法包含： 在該基板上定圖型一掩蔽材料成爲具有暴露該互連元 件的該表面的一開口；及 (請先閱讀背面之注意事項再填寫本頁) 將該第三元件材料引入至該互連元件的暴露表面。 1 1 1 ·如申請專利範圍第1 1 〇項所述的方法，其中該掩蔽 材料爲抗電泳材料。 1 12·如申請專利範圍第1 1〇項所述的方法，其中該第三 元件材料是藉著電鍍而被引入。 1 13·如申請專利範圍第101項所述的方法，其中該第二 元件材料是在相反於該基板之側連接於該第一元件材·料， 並且該第二元件材料包含該可轉變性質，該方法另外包含 在轉變該性質之後，移除該第二元件材料。 經濟部智慧財產局員工消費合作社印製 1 1 4 .如申請專利範圍第1 1 3項所述的方法，其中該第二 元件材料包含一形狀記憶合金，並且產生互連元;件包含^夸 該第二元件材料以麻田散體狀態引入，且轉變該第二元件 材料的性質包含將該第二元件材料轉變爲記憶狀態，該帛 二元件材料在該記憶狀態具有與在該麻田散體狀態的體_ 不伺的體積。 1 1 5 ·如申請專利範圍第1 1 4項所述的方法，其中在轉變 性質之後，該方法另外包含： 將該互連元件退火。 1 1 6 ·如申請專利範圍第1 0 1項所述的方法，其中在產生 互連元件之前，將該接觸結點從該基板上的一第一接觸點 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） 546803 A8 B8 C8 D8 々、申請專利範圍 重新分佈至g亥基板上的一不同的第二接觸點，並且產生互 連元件包含在該第二接觸點處連接該基座。 (請先閲讀背面之注意事項再填寫本頁) 11 7 ·如申請專利範圍第1 〇 1項所述的方法，另外包含： 在轉變之後’在該互連元件的該釋放端部處將該基板 連接於在一電子組件上的接觸結點。 11 8 ·如申請專利範圍第117項所述的方法，另外包含： 在連接之後’測試該基板及該電子組件之一。 1 1 9 ·如申請專利範圍第丨i 8項所述的方法，其中該電子 組件包含一晶粒’並且該互連元件的該釋放端部連接於該 晶粒的一接合墊。 120·—種形成一互連結構的方法，包含： 在一第一基板的一表面上形成一互連元件，該互連元 件包含一第一元件材料及一第二元件材料，以及連接於該 第一基板上的一接觸結點的一基座端及一自由端； 轉變該第一元件材料及該第二元件材料之一的性質， 以修改該互連元件的形狀；及 經濟部智慧財產局員工消費合作社印製 將該互連元件於該自由端處連接於在一第二基板上的 一接觸結點。 1 2 1 ·如申請專利範圍第1 20項所述的方法，其中形成互 連元件包含形成連接於該第一基板上的相應接觸結點的多 個互連元件，並且連接互連元件包含將該多個互連元件連 接於.該第二基板上的相應接觸結點。 1 2 2 .如申請專利範圍第1 2 1項所述的方法，其中連接包 含以充分的接觸力將該多個互連元件的該自由端帶至與相 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公瘦） -17- 546803 A8 B8 C8 D8 々、申請專利範圍 應的接觸結點在一起，以形成壓力連接。 · 丨，-------- (請先閱讀背面之注意事項再填寫本頁) 1 23 ·如申請專利範圍第1 2 1項所述的方法，其中該多個 互連元件包含連接於在該第一基板的一第一表面上的相應 的第一接觸結點的第一互連元件，以及連接於在該第一基 板的一桌一表面上的相應的第二接觸結點的第二互連元件 3 其中該第一互連元件連接於在該第二基板上的該接觸 結點。 1 2 4 ·如申請專利範圍第1〗3項所述的方法，另外包含在 插入物應用中將該第二互連元件連接於一第三基板的相應 接觸結點。 1 2 5 ·如申請專利範圍第1 2 1項所述的方法，另外包含測 試該第二基板。 1 2 6 ·如申請專利範圍第1 2 1項所述的方法，其中該第二 基板爲一電路板。 1 2 7 ·如申請專利範圍第1 2 1項所述的方法，其中該第二 基板的該接觸結點包含外部連接點，且該方法另外包含： 經濟部智慧財產局員工消費合作社印製 將該第二基板的該外部連接點連接於一第三基板的相 應接觸結點。 1 2 8 ·如申請專利範圍第1 2 1項所述的方法，其中連接包 含對該第二基板的暫時連接。 129·如申請專利範圍第121項所述的方法，其中連接包 含對該弟一基板的永久連接。 13 0.如申請專利範圍第129項所述的方法，其中連接包 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 546803 A8 B8 C8 D8 六、申請專利範圍 含將該互連元件的該自由端軟焊於該第二基板的該相應的 接觸結點。 1 3 1.如申請專利範圍第1 2 1項所述的方法，其中該第二 基板爲一系統的一部份。 132.如申請專利範圍第131項所述的方法，其中該系統 包含一積體電路測試系統及一基板系統之一。 --·---^-----f-- (請先閱讀背面之注意事項再填寫本頁) 、^T 經濟部智慧財產局員工消費合作社印製 -19- 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐）546803 A8 B8 C8 ____ _ D8 ___ 6. The scope of patent application can be modified. 23. The electronic component as described in item 22 of the scope of patent application, which additionally contains (please read the precautions on the back before filling this page) a plurality of conductive signal lines associated with the substrate; and Among the plurality of free standing elastic interconnection elements, a base of the interconnection element electrically contacts a corresponding one of the plurality of signal lines and an interconnection element. 24. The electronic component according to item 22 of the scope of patent application, wherein the transformation of one of the first element material and the second element material is irreversible. -25. The electronic component according to item 24 of the scope of patent application, wherein the transformable property is such that a first volume of the second element material can be transformed into a different second volume. 26. The electronic component according to item 25 of the scope of patent application, wherein a free portion of the interconnecting element is initially fixed to the substrate, and when the free portion is released from the substrate, the free portion Can be biased away from the substrate in response to the transition of the second element material from the first volume to the second volume. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 2 7 The electronic component described above, wherein the shape of the first element material and the second element material of the interconnection element is configured such that the second element material is laid on the first element material, and the first volume is larger than the first volume. Two volumes. .28. The electronic component of claim 27, wherein the first element material is a thermally stable material, and the second element material is changed from the first volume to the second volume to the second component. Component materials exposed to heat, the paper size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (ϋ〇 > < 297 mm)-546803 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs • The scope of patent application is 0 A8 B8 C8 D8 2 9. The electronic component as described in item 28 of the application, wherein the transition includes at least about 90% of the changeable volume change of the element material 3 0 · The electronic component as described in item 22 of the claim m / r > v _ Gu ', wherein the material of the element is 殆 楚-each of the component materials has Transformable properties 3 1 · The component material described in item 22 of the patent application scope and at least the introduction of the second component material. 3 2 · The component material described in item 22 of the patent application scope and At least the introduction of the second component material. 33. As claimed in the patent application. One element material described in item 2 contains palladium. 3 4 · The two element material described in item 22 of the patent application scope is laid on the first element material and further includes a material connected to the second element material including the At least about 90% of the interconnecting element. 35. The spring material according to item 34 of the patent application contains a nickel alloy. 36. The connecting element according to item 34 of the patent application additionally comprises adjacent to the bullet carrier. Materials One of the electronic components is by electronic components, and one is by the first electroplating and by the first sputtered by the first electronic components, where the first electronic components, and each spring material in which the first interconnects The electronic component of the spring material, among which the g contact material on one surface of the electronic component ------------ (Please read the precautions on the back before filling this page), 1T -5- 546803 8 8 8 8 ABCD $, patent application scope 37 · The electronic component according to item 22 of the patent application scope, wherein one of the first element material and the second element material contains ~ shape memory alloy. (Please read first back (Please note this page and fill in this page again) 38. The electronic component according to item 22 of the scope of patent application, wherein the transformable property is stress, and the transformation reduces the stress of the material. The electronic component according to the item, wherein the first element material includes the material having transformable properties, and the second element material has a tensile stress, and when transformed, the deformation includes the first element material Response to tensile stress 40. The electronic component according to item 39 of the scope of patent application, wherein the second element material is a thermally stable material, and the transformation of the first element material is caused by the first element material being exposed to heat. result. 4 1 · The electronic component according to item 38 of the scope of patent application, wherein the first element material includes the material having transformable properties, and the second element material has a compressive stress, and during the transformation, the deformation includes Response to this compressive stress of the second element material. 4 2. The electronic component according to item 22 of the scope of patent application, wherein the plurality of free standing elastic interconnection elements are connected to more than one surface of the substrate. 0 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 43 The electronic component according to item 22 of the application, wherein the plurality of contact nodes include a first contact point, and the electronic component further includes: at least one redistribution line connected to at least one of the plurality of nodes, wherein The corresponding at least one interconnection element is connected to a second contact point different from the first contact point, and the second contact point and the first contact point are connected via the at least one redistribution line. This paper size applies to China National Standard (CNS) A4 specification (210X 297 mm) -6- 546803 A8 B8 C8 D8 6. Application for patent scope 44. The electronic component as described in item 22 of the scope of patent application, where the substrate contains Semiconductor, ceramic, organic, and metallic materials. (Please read the precautions on the back before filling out this page) 4 5 · The electronic component as described in item 22 of the patent application scope, wherein the substrate contains an insert (i n t e 1 · ρ 〇 s e 1 ·). 46. The electronic component of claim 22, wherein the substrate comprises a component of a probe card. 47. The electronic component as set forth in claim 22, wherein the substrate includes a socket for releasably connecting the electronic component to a second electronic component. 48 · —An electronic interconnection assembly for a substrate, comprising: a first substrate having a plurality of first contact nodes formed on the first substrate, and a plurality of free standing elastic interconnection elements, the plurality of The free standing elastic interconnection element is connected to the first substrate such that the base of an interconnection element elastically contacts a corresponding one of the plurality of first contact nodes; and a second substrate having a plurality of second contact nodes Where the interconnection element includes: a first element material that can be connected to the substrate; and a consumer element cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs's consumer cooperative prints a second element material connected to the first element material, and the first element One of the material and the second element material includes a material having a transformable property, such that the shape of the interconnecting element is modified during the transformation; wherein the interconnecting element has a movable to the interconnecting element and a second contact A part of a first position that a node touches. 4 9 · The assembly according to item 48 of the scope of patent application, wherein the assembly becomes a part of a probe card assembly. This paper size is applicable to National Standards (CNS) of the Chinese National Standards (CNS) for 8 and 4 inspections (21〇 < 297 public envy)-546803 A8 B8 C8 D8 The assembly, which becomes part of a wafer level test assembly. (Please read the notes on the back before filling out this page) 5 1 · The assembly as described in item 48 of the patent application scope, where the second substrate is a circuit board. 5 2. The assembly according to item 48 of the scope of patent application, wherein the assembly becomes a part of a socket, and the second contact node includes an external connection point. 5 3 · The assembly according to item 52 of the scope of patent application, further comprising a third substrate which is a circuit board having a plurality of third contact nodes, wherein the external connection point and the third contact node are paired To connect the package to the third substrate. 54. The assembly according to item 48 of the scope of patent application, further comprising a stop structure provided on the first substrate and defining the first position. 5 5. The assembly according to item 48 of the scope of patent application, wherein the transformation of one of the first element material and the second element material is irreversible. 56. The assembly according to item 55 of the scope of patent application, wherein the transformable property is such that a first volume of the material can be transformed into a different second volume. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5 7 · The assembly as described in Item 56 of the scope of patent application, wherein a free part of the interconnection element is initially fixed to the first substrate, and when When a portion is released from the first substrate, the free portion may be biased away from the first substrate in response to a transition of the second element material from the first volume to the second volume. 5 8. The assembly according to item 57 of the scope of patent application, wherein the shape of the first element material and the second element material of the interconnection element is configured so that the paper size is applicable to the Chinese National Standard (CNS) A4 Specifications (210X297 Gongchu) 546803 A8 B8 C8 D8 Sixth, the scope of patent application---- The second element material μm ~ is laid on the first element material, and the first volume is larger than the second volume. (Please read the precautions on the back before filling this page) 5 9 · The assembly described in item 58 of the rR patent application, where the first element material 2 is a thermal material and the second element material The transition from the first volume to the first volume is the result of the second element material being exposed to _. 60. The assembly as described in claim 59 of the scope of the patent, wherein the conversion package a changes in the transformable volume of the first element material by at least about. 6 1. The assembly according to item 48 of the scope of patent application, wherein each of the first element material and the first element material has transformable properties. 6 2. The assembly as described in item 48 of the scope of patent application, wherein at least one of the first element material and the brother-element material is cited by electroplating. 63. The assembly according to item 4, wherein at least one of the first element material and the first element material is introduced by sputtering. 64. The assembly according to item 48 of the scope of patent application, wherein the first A component material contains palladium. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 65. The assembly described in item 48 of the scope of patent application, wherein the second element material is laid on the first element material, and the interconnection element additionally includes a connection to the A spring material of the second element material, the spring material comprising at least about 90% of the interconnecting element. 66. The assembly as described in claim 65, wherein the spring material comprises a nickel alloy. 67. The assembly as described in item 65 of the scope of patent application, in which the paper size of the interconnect element is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public directors) 9 546803 A8 B8 C8 ____ D8 VI. Patent application The range " ~~ " ^-pieces additionally contain a contact material adjacent to a surface of the spring material. 68. The assembly according to item 48 of the scope of application for a patent, wherein one of the ~ -th component material and the second-component material comprises a ~ shape memory alloy. (Please read the notes on the back before filling this page) 6 9. The assembly as described in item 48 of the scope of patent application, wherein the transformable property is compressive stress, and the transition reduces the compressive stress of the material. 7 〇. The assembly according to item 69 of the scope of patent application, wherein the first element material includes the material having transformable properties, and the second element material has a tensile stress, wherein during the transformation, the deformation Contains the response to this tensile stress to the second element material. 7 1 · The assembly according to item 70 of the scope of patent application, wherein the second element material is a thermally stable material, and the conversion of the first element material is a result of the first element material being exposed to heat. 7 2 · The assembly according to item 69 of the scope of patent application, wherein the first element material includes the material having transformable properties, and the second element material has a compressive stress, wherein during the transformation, the deformation includes Response to this compressive stress of the second element material. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 7 3 · The assembly as described in item 48 of the scope of patent application, wherein the plurality of free standing elastic interconnection elements are connected to more than one surface of the substrate. 74. The assembly of claim 48, wherein each of the plurality of first contact nodes on the first substrate terminates at the first contact point, and the assembly further includes: connected to the At least one redistribution line of at least one of the plurality of first contact nodes, wherein the corresponding at least one interconnect element is connected to the first contact point, and the paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -10- 546803 8 8 8 8 ABCD 6. A second contact point with the same scope of patent application, the second contact point and the first contact point are connected via the at least one redistribution line. (Please read the notes on the back before filling out this page) 7 5 · The assembly as described in item 48 of the scope of patent application, wherein the first substrate includes one of semiconductor, ceramic, organic, and metallic materials. 7 6 · —A system for contacting an electronic device including an assembly, comprising a first substrate, having a plurality of first contact nodes formed on the first substrate, and a plurality of free standing elastic interconnection elements The plurality of free standing elastic interconnection elements are connected to the first substrate so that the base of an interconnection element elastically contacts a corresponding one of the plurality of first contact nodes; and a second substrate having a plurality of first Two contact nodes; wherein the interconnection element comprises: a first element material that can be connected to the substrate; and a first element material that is connected to the first element material, and the first element material and the second element One of the materials includes a material that has transformable properties so that the shape of the interconnecting element is modified during the transition; printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs where the interconnecting element has a A second contact node contacts a portion of a first location. 77. The system according to item 76 of the scope of patent application, wherein the system includes an integrated circuit test system, and the assembly becomes a part of a probe card assembly. .78. The system of claim 76, wherein the system is a substrate mounting system. 79. The system according to item 78 of the scope of patent application, wherein the paper size of this paper applies the Chinese National Standard (CNS) (21GX297 mm) — '~' ----- 546803 A8 B8 C8 D8 6. The scope of patent application is a circuit board. 80. The system of claim 78 in the scope of patent application, wherein the total becomes a part of a socket, and the second contact node includes an external connection point. 8 1 · The system according to item 80 of the scope of patent application, wherein the assembly further comprises a third substrate which is a circuit board having a plurality of third contact nodes, wherein the external connection point and the third contact node Dot-align to connect the package to the second substrate. 8 2. The system according to item 76 of the scope of patent application, further comprising a stop structure provided on the first substrate and defining the first position. 83 · —A method of forming an interconnect structure, comprising: introducing an interconnect element connected to a substrate, the interconnect element including a first element material and a second element material; released from the substrate at one end The interconnection element; and changing the properties of one of the first element material and the second element material to modify the shape of the interconnection element. 8 4 · The method as described in item 83 of the scope of patent application, wherein the transformation includes changing the properties of each of the first element material and the second element material. 8 5 The method of clause 2, wherein the interconnect element is released from the substrate before the transition. 86. The method of claim 83, wherein the transformation includes heating the interconnect element. 87. The method of claim 83, wherein the transforming comprises changing the volume of one of the first element material and the second element material. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) -I ”· 9—I (Please read the precautions on the back before filling out this page) '1T Printed by the Employees’ Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs- 12- 546803 A8 B8 C8 D8 VI. Scope of patent application (please read the notes on the back before filling out this page) 8 8 · The method described in item 83 of the scope of patent application, where the transformation includes The end is biased from a first position to a second position with a greater distance from the surface of the substrate. 89. The method of claim 88, further comprising limiting the end of the interconnect element 9 0. The method as described in claim 88, wherein the transformable property includes stress, and the transition includes reducing the magnitude of the stress. 91. As described in claim 88 The method described above further comprises: introducing a third element material with elastic properties onto the interconnecting element. 9 2. The method according to item 91 of the patent application scope, wherein the interconnecting element is connected to the substrate. Surface, and the third element material is introduced on a surface of the interconnect element opposite to the substrate surface, the method of introducing the third element material includes: patterning a masking material on the substrate to expose the An opening on the surface of the interconnecting element; and the introduction of the third element material of the Hai element to the exposed surface of the interconnecting element. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 9 3. As described in item 92 of the scope of patent application Method, wherein the third element material is an anti-electrophoretic material. 9 4 · The method according to item 92 of the scope of patent application, wherein the third element material is introduced by a plating process. 9 5. As applied The method of item 87, wherein the second element material is connected to the first element material on a side opposite to the substrate, and the second element material includes the transformable property, and the method further includes: This [Zhang Zhiyi iiTii Home Standard (CNS) ^ grid (210x297 mm)-: 546803 A8 B8 C8 D8 VI. Patent application scope After changing this property, remove the second component material (Please read the notes on the back before filling this page) 9 6. The method according to item 95 of the scope of patent application, wherein the second element material includes a shape memory alloy, and generating the interconnect element includes the first element The element material is introduced in the state of Asa, and changing the properties of the second element material includes transforming the second element material into a memory state. The second element has a volume in the memory state that is different from the volume in the state 97. The method as described in claim 96 of the gR patent, wherein after the property is changed, the method further comprises: annealing the interconnect element. 9 8 · The method as described in claim 83, further comprising: after the transition 'connecting the substrate to a contact node on an electronic component at the release end of the interconnect element . 9 9 · The method according to item 98 of the scope of patent application, further comprising: testing the substrate and one of the electronic components after connection. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 100. The method as described in item 99 of the scope of patent application, wherein the electronic component includes a die and the release end of the interconnection element is connected to the die Of a bonding pad. 101 · A method of forming an interconnect structure, comprising: patterning a masking material on a substrate to have an opening for a contact node formed on the substrate; generating an interconnect element having a connection A base at the contact node and a free end extending on a part of the masking material, the interconnection element includes a first element material and a second element material; the paper size applies to Chinese national standards (CNS) A4 specification (210X297 public director) -14-546803 A8 B8 C8 D8 VI. Apply for a patent to remove the masking material; and (Please read the precautions on the back before filling out this page) Change the interconnection element Properties of one of the first element material and the second element material to modify the shape of the interconnect element. 102. The method as described in claim 101, wherein the transforming includes transforming each of the first element material and the second element material. 1 0 3. The method of claim 101, wherein the transition comprises heating the interconnect element to a temperature. 1 04. The method of claim 10, wherein the transition causes a volume change in one of the first element material and the second element material. 1 0 5 · The method as described in item 101 of the patent application range, wherein the transformable property includes stress, and the transition includes modifying the magnitude of the stress. '1 0 6. The method according to item 丨 〇 丨, wherein the transition biases the free end of the interconnect element from a first position to a distance greater than a distance from the surface of the substrate. Second position. 107. The method of claim 106, further comprising limiting the transition bias of the free end of the interconnect element. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 108. The method described in the scope of patent application No. 101, further comprising: introducing a third element material with elastic properties on the interconnecting element. The method of item 108 of the patent scope, wherein the introduction of the third element material comprises electroplating a conductive alloy. 1 10. The method according to item 108 of the scope of patent application, the interconnection element is connected to a surface of the substrate, and the third element material is introduced on a surface of the interconnection element opposite to the surface of the substrate , The introduction of the third yuan paper size applicable to Chinese National Standards (CNS) A4 specifications (210X 297 mm) -15 546803 A8 B8 C8 D8 专利, the method of applying for patent scope of materials includes: The masking material becomes an opening with the surface exposing the interconnect element; and (please read the precautions on the back before filling this page) to introduce the third element material to the exposed surface of the interconnect element. 1 1 1 · The method according to item 110 of the scope of patent application, wherein the masking material is an anti-electrophoretic material. 1 12. The method according to item 110 of the scope of patent application, wherein the third element material is introduced by electroplating. 1 13. The method of claim 101, wherein the second element material is connected to the first element material at a side opposite to the substrate, and the second element material includes the transformable property The method further includes removing the second element material after changing the property. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 1 4. The method as described in item 113 of the scope of patent application, wherein the second element material includes a shape memory alloy and generates interconnect elements; The second element material is introduced in a state of Mata, and changing the properties of the second element material includes transforming the second element material into a memory state. The second element material has a body in the memory state that is the same as that in the state of the Mata state. _ Volume not served. 1 1 5 The method of claim 114 in the scope of patent application, wherein after the property is changed, the method further comprises: annealing the interconnect element. 1 1 6 · The method according to item 101 of the scope of patent application, wherein the contact node is removed from a first contact point on the substrate before the interconnection element is generated. ) A4 specification (210X297 mm) 546803 A8 B8 C8 D8 々, the patent application scope is redistributed to a different second contact point on the g Hai substrate, and an interconnect element is generated that includes connecting the base at the second contact point seat. (Please read the precautions on the back before filling out this page) 11 7 · The method described in the scope of patent application No. 1 010, further comprising: after the transformation 'at the release end of the interconnect element The substrate is connected to a contact node on an electronic component. 11 8 · The method according to item 117 of the patent application scope, further comprising: 'testing one of the substrate and the electronic component after the connection. 1 1 9 The method according to item 8 of the scope of patent application, wherein the electronic component includes a die 'and the release end of the interconnect element is connected to a bonding pad of the die. 120 · —A method for forming an interconnect structure, comprising: forming an interconnect element on a surface of a first substrate, the interconnect element including a first element material and a second element material, and being connected to the A base end and a free end of a contact node on the first substrate; changing the nature of one of the first element material and the second element material to modify the shape of the interconnect element; and the intellectual property of the Ministry of Economic Affairs The bureau employee consumer cooperative prints the interconnection element at the free end to a contact node on a second substrate. 1 2 1 The method according to item 120 of the scope of patent application, wherein forming an interconnection element includes forming a plurality of interconnection elements connected to corresponding contact nodes on the first substrate, and connecting the interconnection elements includes The plurality of interconnection elements are connected to corresponding contact nodes on the second substrate. 1 2 2. The method as described in item 121 of the scope of patent application, wherein the connection includes bringing the free ends of the plurality of interconnected elements to a paper size corresponding to a Chinese paper standard (CNS) with sufficient contact force A4 specifications (210X297 male thin) -17- 546803 A8 B8 C8 D8 々, the contact nodes that should be in the scope of patent application are together to form a pressure connection. · 丨, -------- (Please read the notes on the back before filling out this page) 1 23 · The method as described in item 121 of the scope of patent application, wherein the plurality of interconnected elements include connections A first interconnect element at a corresponding first contact node on a first surface of the first substrate, and a second contact node connected to a corresponding second contact node on a surface of a table of the first substrate The second interconnection element 3 wherein the first interconnection element is connected to the contact node on the second substrate. 1 2 4 The method according to item 1 of the scope of patent application, further comprising connecting the second interconnection element to a corresponding contact node of a third substrate in an insert application. 1 2 5 The method as described in item 121 of the scope of patent application, further comprising testing the second substrate. 1 2 6 The method according to item 121 of the scope of patent application, wherein the second substrate is a circuit board. 1 2 7 · The method as described in item 121 of the scope of patent application, wherein the contact node of the second substrate includes an external connection point, and the method further includes: printing by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The external connection point of the second substrate is connected to a corresponding contact node of a third substrate. 1 2 8 The method according to item 121 of the scope of patent application, wherein the connection includes a temporary connection to the second substrate. 129. A method as described in claim 121 in the scope of patent application, wherein the connection includes a permanent connection to the substrate. 13 0. The method as described in item 129 of the scope of patent application, wherein the paper size of the connection package is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 546803 A8 B8 C8 D8 6. The scope of the patent application includes the interconnection The free ends of the components are soldered to the corresponding contact nodes of the second substrate. 1 3 1. The method according to item 121 of the scope of patent application, wherein the second substrate is part of a system. 132. The method of claim 131, wherein the system comprises one of an integrated circuit test system and a substrate system. -· --- ^ ----- f-- (Please read the notes on the back before filling out this page), ^ T Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-19- This paper size applies to China Standard (CNS) Α4 specification (210X 297 mm)
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US09/547,561 US7458816B1 (en) 2000-04-12 2000-04-12 Shaped spring

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JP2003531495A (en) 2003-10-21
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CN1451179A (en) 2003-10-22
EP1275150A2 (en) 2003-01-15
KR100801353B1 (en) 2008-02-05
WO2001080315A3 (en) 2002-03-28
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KR100835027B1 (en) 2008-06-03
AU2001249567A1 (en) 2001-10-30

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