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TW493289B - Long lifetime polymer light-emitting devices with high luminous efficiency and high radiance - Google Patents

Long lifetime polymer light-emitting devices with high luminous efficiency and high radiance Download PDF

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Publication number
TW493289B
TW493289B TW089114453A TW89114453A TW493289B TW 493289 B TW493289 B TW 493289B TW 089114453 A TW089114453 A TW 089114453A TW 89114453 A TW89114453 A TW 89114453A TW 493289 B TW493289 B TW 493289B
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TW089114453A
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Chinese (zh)
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Marie O'regan
Chi Zhang
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Uniax Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/852Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The luminous efficiency and radiance of light emitting diodes (LEDs) fabricated from organic emissive materials can be increased by using a multilayer cathode including a low work function layer and a high work function high reflectivity layer, in combination with a high work function, high reflectivity anode material in the device.

Description

493289 A7 ---------- —_Β7____ 五、發明說明(1 ) ~~ : 發明的領娀493289 A7 ---------- --_ Β7 ____ V. Description of the invention (1) ~~: The collar of the invention

本發明係關f改善發光效率與進步照射之有機合 光二極管。 ·奶I 相關技術的説曰3 以共部有《合物層t造之二極管、#料光二極管 (LEDs)因其在顯示《藝上潛在用途引起重&。標準聚合物 LED結構包含以下接觸順序的層次:有氧化銦·錫(汀〇)塗層 4基底、鈍化層、發光聚合物,繼以單層陰極。在有機聚 合物基的LED範圍内常用較高工作函數金屬作陽極,供注 射半導性電發光聚合物其他填充π-光帶孔。相對低工作函 數金屬罝作陰極材料用,以注射-電子進入半導性電發光聚 e物之其他全π * _光帶内。陽極處注射及陰極處注射的孔穴 在活性層内放射地重合併而發光。作陽極物質用之典型較 高工作函數材料包括氧化銦/錫的透明導電薄膜。或者,能 用導電翠綠色鹽式的聚苯胺薄膜。氧化錮/錫膜與導電翠綠 鹽式之聚苯胺薄膜習用較佳,因作透明電極時二者皆容許 自裝置中由LED放射出有效程度的發光。 作陰極材料適用之典型較低工作函數金屬爲諸如鈣、鎂 與鋇等。鹹金屬易太活動,作用以塗蔽發光層(例如電發光 聚合物)致使發生短路及不合格短裝.置壽命。 -The present invention relates to an organic photodiode with improved luminous efficiency and improved irradiation. · Milk I related technology is described in the following three parts: "Composite layers made of diodes, # material photodiodes (LEDs) because of their potential use in the display caused by heavy &. The standard polymer LED structure includes the following layers of contact sequence: indium oxide tin (tin) coating 4 substrate, passivation layer, light-emitting polymer, followed by a single-layer cathode. In the range of organic polymer-based LEDs, higher working function metals are often used as anodes for the injection of semiconductive electroluminescent polymers and other filled π-light band holes. The relatively low working function metal rhenium is used as the cathode material, and the injection-electron enters the other full π * _ band of the semi-conductive electroluminescent polymer. The holes injected at the anode and the cathode are radiatively recombined in the active layer to emit light. Typical higher work function materials for anode materials include transparent conductive films of indium oxide / tin. Alternatively, a conductive emerald salt type polyaniline film can be used. The hafnium oxide / tin film and the conductive emerald salt polyaniline film are more commonly used, because when used as transparent electrodes, both allow the device to emit an effective amount of light from the LED. Typical lower work function metals suitable as cathode materials are such as calcium, magnesium and barium. Salty metals are prone to move too much, and they are used to coat the light-emitting layer (such as electroluminescent polymer), which causes short-circuit and unqualified short-term installation life. -

技術上已知嗲極呈隨意低工作函氣金屬[見Ca〇,Y ; PCT WO 98/57381 與Pichler,K·,國-際專利电讀案 WO 98/10621]的 超薄層或低工作函數金屬氧化物[Ca〇, γ·; PCT申請案No. 99 US/23775]之超薄層形式者產生led貢獻能比較或較佳起始 -4- 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 X 297公爱) (請先閱讀背面之注意事項、寫本頁) 裝 -1線. 經濟部智慧財產局員工消費合作社印製It is known in the art that ultra-thin layers or low-working low-working-function metal [see CaO, Y; PCT WO 98/57381 and Pichler, K., International-International Patent Electronic Reading Case WO 98/10621]. Functional metal oxides [Ca〇, γ ·; PCT application No. 99 US / 23775] in the form of ultra-thin layers can produce LED contributions that can be compared or better. -4- This paper size applies Chinese National Standards (CNS) A4 specification (21〇X 297 public love) (Please read the precautions on the back and write this page first) Pack -1 line. Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs

五、發明說明(2 經濟部智慧財產局員工消費合作社印製 績效(例如亮度及效率)盥 陰極的相似LED爲優。長期作業哥命,比採用傳統厚膜 ,合物咖之製作雖有進步,結果 例 ;=的效率足夠供其用於某些顯示用途。但在; 私{置中發光政率係:臨界參數。發光效率較高直 挺=传用題較長而不必電池充電。更常見,發光效率較 用顯示實用範— 圍更廣。因此 2效率的!要。特定料Μ輪出宜在前進方向呈窄^ 錐形。此類用途中高軋射度特別重要。 關-發光二極管,包-括—含高反射性及 :數:半透明挪’與—含至少一選自金屬、金屬氧化 :::、寺詛合物之低工步函數物質的第一陰極層,及至少 一有向反射性及高工作函數之第:陰極層。 透:::獲仔改善發光效率與進步照射。第-具體例内半 透:層:戈弟二陰極層有反射率至少91.4%及工作函數V. Description of the invention (2) The similar performance of the printed cathodes (such as brightness and efficiency) in the consumer co-operatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is similar to that of the LEDs. The long-term operation is better than the traditional thick film. Result example; = 's efficiency is sufficient for some display purposes. But in; private {home in the light-emitting government rate system: critical parameters. High light-emitting efficiency straight = long pass-through problem without having to charge the battery. More Commonly, the luminous efficiency is wider than the practical range of display. Therefore, the efficiency of 2 is necessary! The specific material M should be tapered in the forward direction. The high rolling degree is particularly important in such applications. Off-LED , Including-including the first cathode layer with high reflectivity and: number: translucent, and-containing at least one low step function material selected from the group consisting of metals, metal oxides :::, and temple compounds, and at least A directional reflectivity and high work function of the first: the cathode layer. Transparent: :: to improve the luminous efficiency and improve the irradiation. The first-specific examples of semi-transparent: layer: Gedi second cathode layer has a reflectance of at least 91.4% and Working function

Vv。弟二具體例中半透明層及/或第二陰極層有反射率至. ί::二彻⑽與50。nm之發射波長間。較佳具體例内半 透明層與弟二陰極層二者皆爲銀。 此處用辭‘‘鄰接,,不一定意謂一 之間可設置一或數中間層。層。所:謂鄭層 文内用辭“在發射波長處反射率.·.,,係指一層在特定 長處的反射率。所引反射率處波長爲自裝置中之尖㈠ 射。反射率値係自標準敎科書J. H Weaver, H Μ ---1.--I J-------裝·-- (請先閱讀背面之注意事寫本頁} -線. 本紙張尺度適财關家標^7cNS)A4規格⑽χ 2^^ 493289 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(3 ) !^(^1*丨1^的01(:取11〇113〇(^第12-117頁“金屬與半導體性質,, 表内查出。 - 、 此處用辭“半透明,,定義爲能透射至少若干光線 ',較佳在 有關特定波長約4 %與2 5 %間之光線量。 圖之簡述 圖U?/本發明用一聚合物LED裝置構型的示意圖。非按比 例0 圖2表現人眼對光之感度,爲波長的函數。 圖3顯示一對照聚合物LED的電照明光譜, 〆、LbD用 C〇W〇n PD0 122製作,有一IT〇電極與_Ba/A丨電極(即對照 例A )。 - …、 圖4表現本發明一聚合物LED之電照明光譜,有—3〇〇入銀 陽極與一 Ba/Ag電極(即實例3 )。 圖5顯示一對照聚合物LED的電照明光譜,其用 C〇Vi〇nPDY 131製作,有一IT〇電極與一以从丨電極即對昭 例C )。 …、 圖6表現本發明一聚合物LED之電照明光譜,利用c〇vi〇n PDY m製作,有一 300A銀陽極與一 Ba/Ag電極(即 4)0 、 圖7顯示由實例4及對照例c的裝置亮度對電壓曲:線之標 搶。 ·' 較佳具體例説明 最佳見圖1,一LED裝置100包括基底11〇與陽極陽 極120含一高反射率金屬的半透明層122與_隨意鈍化層 -6 -----Γ.---- ^-------裝--- (請先閱讀背面之注意事寫本頁) -·線- 本紙張尺度適用中國國家標進捕格(210 X A巷 493289 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(4 ) 128。半透明層122有第一面124鄰接基底110及一相反第二 面126。至少一發射層13〇佈置在陽極12〇與陰極14〇中間。 陰極140含一低工作函數物質的第一陰極層M2與一高反射 率金屬之第二陰極層144。光線經基底11〇發射如箭頭15〇所 示。 基底' 能作基底110用的適當材料包括例如玻璃與聚合物膜。 陽極 慣例雖用透明電極如IT0於發光的裝置側面以減少經過電 極之透射抽失,本發明用一薄層高反射率金屬層i26以替代 或增大透明電極以提向裝置之豉率。如圖丨内顯見,陽極 120能係一複合層,由半透明層126及導體聚合物塗覆於半 透明層126的第二面124上之鈍化層128組成。 在第一交替具體例(未表現)内陽極僅含一導電帶電流層 能作 >王射孔層而不含鈍化層。在第二替代例(未表現)中陽 極含一透明導電層如IT〇鄰近半透明層126的第一面及鈍 化層128。第三選擇具體例(未表現)内陽極含一透明導電層 如nro鄰近半透明層126之第一面124而不含鈍化層。複合^ 極120或其他單陽極層(未表現)的半透明層126係由選自内 工作函數(典Μ於約4.0 eV)之高反·射率金屬群的陽極材= 製作。適宜金屬實例以括氟、金、鋁及銅。一較佳具體 内半透明層126有反射率在發射波長至少914%者爲良= 體(有導電率自約102至約1〇8irWl)4能形成平滑連 兒 第二較佳具體例中半透明層於波長發射處有約92%以上、 -7-Vv. In the second specific example, the translucent layer and / or the second cathode layer have a reflectivity of. Ί :: 二 彻 ⑽ 与 50. nm emission wavelength. In the preferred embodiment, both the translucent layer and the second cathode layer are silver. The expression ‘’ adjacency here does not necessarily mean that one or several intermediate layers can be set between one. Floor. So, the term "reflectivity at the emission wavelength ..." in Zheng layer text refers to the reflectance of a layer at a specific length. The wavelength of the cited reflectance is the sharp emission from the device. The reflectivity is not From the standard book J. H Weaver, H Μ --- 1 .-- I J ------- install ... (Please read the note on the back to write this page first)-line. This paper size Shicaiguan Family Mark ^ 7cNS) A4 Specification ⑽χ 2 ^^ 493289 Printed by A7 B7, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (3)! ^ (^ 1 * 丨 1 ^ 01 (: Take 11〇113) (^ Pages 12-117, "Metal and semiconductor properties, found in the table.-" The term "translucent, defined here as able to transmit at least some light," preferably at about 4% and 2 of the specific wavelength. The amount of light between 5%. Brief description of the figure U? / Schematic diagram of the configuration of a polymer LED device of the present invention. Not to scale 0 Figure 2 shows the human eye's sensitivity to light as a function of wavelength. Figure 3 shows A comparison of the electrical lighting spectrum of a polymer LED, 〆 and LbD are made with COWon PD0 122, and there is an IT0 electrode and a _Ba / A 丨 electrode (that is, Comparative Example A).-..., Figure 4 shows the first invention polymerization The electrical lighting spectrum of the LED has -300 A silver anode and a Ba / Ag electrode (ie, Example 3). Figure 5 shows the electrical lighting spectrum of a control polymer LED, which is made with CoViOnPDY 131 and has a The IT0 electrode and the electrode are the same as in Example C.…, Figure 6 shows the electrical lighting spectrum of a polymer LED of the present invention. It is made using covion PDY m, and has a 300A silver anode and a Ba / Ag electrode (ie, 4) 0, Figure 7 shows the brightness versus voltage curve of the device according to Example 4 and Comparative Example c: the standard line of the line. "'The best specific example is best shown in Figure 1, an LED device 100 includes a substrate 11 〇 and anode anode 120 contains a highly reflective metal translucent layer 122 and _ random passivation layer-6 ----- Γ .---- ^ ------- install --- (Please read first Note on the reverse side of this page)-· Line-This paper size is applicable to the national standard of China (210 XA Lane 493289 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Note (4) 128. Translucent The layer 122 has a first surface 124 adjacent to the substrate 110 and an opposite second surface 126. At least one emitting layer 130 is disposed between the anode 12o and the cathode 14o. The cathode 140 contains The first cathode layer M2 of a low work function substance and the second cathode layer 144 of a highly reflective metal. Light is emitted through the substrate 110 as shown by arrow 150. The substrate 'Suitable materials that can be used for the substrate 110 include, for example, glass and Polymer film Although the conventional anode electrode uses a transparent electrode such as IT0 on the side of the light emitting device to reduce transmission loss through the electrode, the present invention uses a thin layer of high reflectivity metal layer i26 to replace or increase the transparent electrode to lift the device. Rate. As can be clearly seen in the figure, the anode 120 can be a composite layer composed of a semi-transparent layer 126 and a passivation layer 128 coated with a conductive polymer on the second surface 124 of the semi-transparent layer 126. In the first alternate embodiment (not shown), the anode contains only a conductive current-carrying layer and can be used as a perforation layer without a passivation layer. In a second alternative (not shown), the anode contains a transparent conductive layer such as IT0 adjacent to the first side of the translucent layer 126 and the passivation layer 128. In the third specific example (not shown), the inner anode contains a transparent conductive layer such as nro adjacent to the first surface 124 of the translucent layer 126 without a passivation layer. The composite electrode 120 or other translucent layer 126 of a single anode layer (not shown) is made of an anode material selected from a high reflectance metal group with an internal working function (typically about 4.0 eV). Examples of suitable metals include fluorine, gold, aluminum and copper. A preferred specific inner translucent layer 126 is good if its reflectance is at least 914% at the emission wavelength = bulk (having a conductivity from about 102 to about 108 irWl). 4 can form a smooth joint. The second preferred embodiment is half. The transparent layer has about 92% or more at the wavelength emission.

(請先閱讀背面之注意事寫本頁) 裝 · 丨線- 493289 A7(Please read the note on the back first to write this page) Assembly · 丨 Line-493289 A7

五、發明說明(5 ) 反射率。第三較佳具體例内半透明層在波長發射處有約 9 2 %與約96.5%間的反射率。第四較―佳具體例中半透明層 於波長發射處有反射率在約9 4 %及約96 5%之間。漯五較佳 具體例内半透明層126在波長發射處有大於約96%的反射 率。另一較佳具體例中半透明層126於發射波長4〇〇 至 5〇0 nm時有至少s 6 %之反射率。此〜項材料的實例包括銀、 鋁、金與銅以及此等金屬層之合金。 半透明層126能用澱積薄膜技術上已知的任何技術典型製 作包括例如真空蒸發、濺射澱積、電子束澱積、或化學蒗 氣澱積例如用純金屬或合金或其他薄膜先質等。金屬層: 厚度能由恶發/澱積的速度與時間控制。蒸| /澱積之典型 速率約〇·5至ι〇Α/秒。半透明層厚度應足夠薄以透射至少若 干光(使其半透明),而足夠厚俾得連續層。半透明金屬層 126典型有厚度約1〇〇Α至約5〇〇人。第一較佳具體例内半透 明層厚約250至約400Α。第二較佳具體例中半透明層厚約 275至約350Α。第三較佳具體例内半透明層厚約2乃至約 325Α 。 、 ' 經濟部智慧財產局員工消費合作社印製 篆電材料的隨意鈍化層128能#工作函數不精確配合發射 聚^物可利用於高反射率金屬之用途。本發明適用的正確 導私材礼可廣泛變異而非嚴限。適寘導電材料實例·包括但 不限於聚(苯胺)、聚(苯胺)摻混物、聚嘧吩、及聚嘧吩摻 心物。適用導電聚(苯胺)包括均聚物,输生物及與整體聚 合物的摻混物。合用聚(苯胺)例包括us專利5,232,63丨及 5,723,873内發表者。適宜導電性聚嘍吩包括均聚物, -8- A7 -----------—B7 —_____ 五、發明說明(6 ) 物及與整體聚合物之摻混物。合宜聚噻吩例包括聚(乙晞二 氧噻吩MPEDT)如聚(3,4-乙烯二氧嘍吩)以及us專利 5’766,5 15及5,035,926等内發表者。此處用詞“聚胺苯,,與“聚 嚯吩’’總稱包括取代的與未取代的物料。亦用以大致包括任 何附帶加藥’特別用以使材料導電之酸性物質。 第一陰極層142係選自低工作函數金屬或低工作函數金屬 氧化物(典型小於約3·5 eV)。適宜低功率物質包鹹、鹹土與 鑭系金屬及鹹、鹹土與鑭系重層之氧化物。此處用辭“鹹金 屬依習慣意義指週期表1 A族的元素。此處用辭“鹹金屬氧 化物’’慣義指鹹金屬與氧之化合物。爲便利計鹹金屬氧化物 在此以相當的簡單氧化物(如Li2〇、Na20、K20、Rb20、與 Cs2〇)之化學式指示;但此簡單氧化物資料旨在涵蓋其他氧 化物,包括混合氧化物與非化學計算的氧化物(例如Lix〇、 Nax〇、Kx〇、RbxO及CsxO,其中 X係自約 〇·1 至約 2)。 此處用辭“鹹土金屬,,慣意指週期表IIA放元素。較佳鹹土 金屬包括鎂(即M g)、鈣(即C a )、鳃(即S r )及鋇(即B a )。 此處用辭“鹹土金屬氧化物,,常指鹹土金屬興氧之化合物。 爲便利計鹹土金屬氧化物在此用相當簡單氧化物的化學式 指示(例如MgO、BaO、CaO、SrO);不過,此簡單氧化物資 料意欲涵蓋其他氧化物,包括混合氧化物與非化學.計算量 之氧化物(例如MgxO、BaxO、CaxO及SrxO,其X係約〇·1至約 1 ) 0 文内用‘‘鑭系金屬,,之辭慣義指週期表的鑭系元素自鈽(即 -9 - 本紙張尺度適用中國國家標準(CNS)A4規格(210^ 297公釐) (請先閱讀背面之注意事填寫本頁) ι^、ί$ -線· 經濟部智慧財產局員工消費合作社印製 493289 A7 B7 五、發明說明(7 ) 請先閱讀背面之注意事'寫本頁)5. Description of the invention (5) Reflectivity. In the third preferred embodiment, the translucent layer has a reflectance between about 92% and about 96.5% at the wavelength emission. In the fourth preferred embodiment, the translucent layer has a reflectance at the wavelength emission between about 94% and about 965%. In the fifth preferred embodiment, the translucent layer 126 has a reflectance at the wavelength emission of greater than about 96%. In another preferred embodiment, the translucent layer 126 has a reflectance of at least s6% at an emission wavelength of 400 to 5000 nm. Examples of these materials include silver, aluminum, gold and copper, and alloys of these metal layers. The translucent layer 126 can be typically fabricated using any technique known in the art of depositing thin films including, for example, vacuum evaporation, sputtering deposition, electron beam deposition, or chemical radon deposition, such as using pure metals or alloys or other thin film precursor Wait. Metal layer: The thickness can be controlled by the rate and time of the eruption / deposition. A typical rate of evaporation / deposition is about 0.5 to ιOA / sec. The translucent layer should be thin enough to transmit at least some light (make it translucent) and thick enough to form a continuous layer. The translucent metal layer 126 typically has a thickness of about 100 A to about 500 people. In the first preferred embodiment, the semi-transparent layer has a thickness of about 250 to about 400A. In the second preferred embodiment, the translucent layer has a thickness of about 275 to about 350A. In the third preferred embodiment, the thickness of the translucent layer is about 2 to about 325A. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the random passivation layer 128 of electric energy materials can work inaccurately with the emission polymer, which can be used for high-reflectivity metals. The present invention's applicable private guide can be widely varied rather than strictly limited. Examples of suitable conductive materials include, but are not limited to, poly (aniline), poly (aniline) blends, polypyrimidines, and polypyrimidine blends. Suitable conductive poly (anilines) include homopolymers, transporters, and blends with bulk polymers. Examples of combined poly (aniline) include those published in US patents 5,232,63, and 5,723,873. Suitable conductive polyfluorenes include homopolymers, -8- A7 -----------— B7 —_____ V. Description of the invention (6) and blends with the overall polymer. Examples of suitable polythiophenes include poly (ethylenedioxythiophene MPEDT) such as poly (3,4-ethylenedioxythiophene), and US patents 5'766,5 15 and 5,035,926. The terms "polyamine," and "polyphenone '" are used herein collectively to include substituted and unsubstituted materials. It is also used to broadly include any incidental dosing ', especially acidic materials used to make the material conductive. The first cathode layer 142 is selected from a low work function metal or a low work function metal oxide (typically less than about 3.5 eV). Suitable for low-power substances including salt, salty soil and lanthanide metals and salt, salty soil and lanthanide heavy layer oxides. The term "salt metal" refers to elements of Group A of the Periodic Table 1 in the customary sense. The term "salt metal oxide '" here refers to the compound of salt metal and oxygen. For the sake of convenience, the salt metal oxides are indicated by the chemical formulas of fairly simple oxides (such as Li20, Na20, K20, Rb20, and Cs20); however, this simple oxide data is intended to cover other oxides, including mixed oxidation And non-stoichiometric oxides (such as Lix0, Nax0, Kx0, RbxO, and CsxO, where X is from about 0.1 to about 2). The term "salt earth metal" is used to refer to the element IIA of the periodic table. Preferred salt earth metals include magnesium (ie, M g), calcium (ie, C a), gills (ie, S r), and barium (ie, B a). The term "salt earth metal oxides" here often refers to compounds that generate oxygen from salt earth metals. For convenience, the salt earth metal oxides are indicated by the chemical formulas of fairly simple oxides (eg MgO, BaO, CaO, SrO); however, this simple oxide data is intended to cover other oxides, including mixed oxides and non-chemicals. Calculated amounts of oxides (such as MgxO, BaxO, CaxO, and SrxO, where X is from about 0.1 to about 1) 0 The term "lanthanide metal" is used in the text to refer to the lanthanide element of the periodic table. (Ie -9-This paper size applies to China National Standard (CNS) A4 specifications (210 ^ 297mm) (Please read the notes on the back first and fill in this page) ι ^, ί $-Line · Employees of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the Consumer Cooperative 493289 A7 B7 V. Description of Invention (7) Please read the notes on the back first (write this page)

Ce)至(即Lu)。較佳鑭系金屬包括釤(即Sm)、釔(即Yb) 及钕(即Nd)。此處所用“鑭系金屬氧化物慣義指鑭系金屬 與氧足化合物。爲方便計文内鑭系金屬氧化物用相當+ 3價 悲氧化物的化學式指示(例如Sm2〇3、Yb2〇^Nd2〇3);但此 簡單氧化物資料意欲涵蓋其他氧化物,包括混合氧化物與 非化學计异量氧化物等(例如,Smx〇、Ybx〇及Ndy〇),其X 係約0.1至約1.5)。 一較佳具體例内第一陰極層142含低工作函數金屬氧化 物。第一陰極層1 42典型能藉加熱眞空蒸發澱積。第一陰極 層142典型有厚度自約1〇至2〇〇人。典型蒸發/澱積速率爲每 秒約0.2約4 A。 - 經濟部智慧財產局員工消費合作社印製 與半透明層1 26相似、第二陰極層i 44有高反射率與高工 作函數,由能形成光滑連續膜之材料製作。第二陰極層144 典型有工作函數大於4 eV。較佳具體例中第二陰極層144在 發射波長處有至少91.4%的反射率。第二較佳具體例内第二 陰極層在發射波長處有92%與96.5%間之反射率。第三較佳 /、組例中第一陰極層在發射波長處有反射率在94 %與9 6.5 0/〇 間。第四較佳具體例内第二陰極層的反射率在發射波長處 大於96 /〇。另車又佳具體例中用在自400 nm至5 00 nm發射波 長處有至少8 6 %反射率之金屬作第二陰極層144。如·同半透 明層126、第二陰極層144含一陰極材料選自金屬與.金屬合 金。適罝鬲工作函數金屬之實例包括鋁、銀、銅、金等類 以及此等金屬的合金。 一較佳具體例用j發射波長處有至少9丨4%反射率的金屬 -10- 297公釐) 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 493289 A7 B7 五、發明說明(8 或金屬合金兼作半透明層126及作第二陰極層144。另一較 佳具體例内用在自4〇〇 nmS5〇〇 nm發射波長時有至少86% 反射率之金屬兼作半透明層n6及作第二陰極層144。 通常第二陰極層144不必爲半透明層126所用同一材料。 舉例可用金作高工作函數半透明陽極,能於雙層陰極中用 銀作向反射率金屬層。較佳—具體例内高反射率層丄42有一反 射率至少91.4%或在400-500 nm發射波長處至少8 6 %反射率 的金屬作第二陰極層144與半透明層126二者。一更佳具體 例中用銀(A g)兼作高反射率金屬層於雙層陰極内與作半 明陰極二者。 或者,能用一多層陰極系統(未表現)。舉例,第一層高 反射率陰極層(宜具足夠厚度成不透明)可爲另一高反 陰極層之層覆蓋,可比第一高及舳輋陰極層或容或少反 射:在三層陰極加蓋構型中最上面金屬可係能形成光滑'連 :月旲的任何穩定金屬如鋁或鋁合金。其後層次能作特定功 =心加,例如供鈍化及封閉I置用。用以封閉裝置層次之 貫例G括义氣穩定的加蓋層。“窆i穩定,,一辭指保護蓋 層了 次防止裝置四週可能存在之週圍氧與濕氣的能 氧t走蛊層之適當材料包括金屬或金屬合金。 、止如同~半透明層126、第二陰極層144能用已知;殿積技術製 造。、蒸曰發/殿積的典型速率係自約1-20A/秒鐘。第二·陰極層 144<厚度^應足夠覆蓋第一陰極層並於相關波長時足夠不透 明以產生高反射率。第二陰極層典型有至少約800A厚产。 發射t 又 11 - (210 x 297 公釐) (請先閱讀背面之注意事 寫本頁) 經濟部智慧財產局員工消費合作社印製 493289 A7 五、發明說明(9 ) 本發明的LED内至少—發射層13〇 (亦稱發光層或電光 含-電發光、半導電有機物質。在㈣内作業射層用材曰料 -般包括聚合型或分子材料展現電發光者。更特殊者展現 電發光之材料其能溶JL能由溶液中處理成均勾薄膜者。 合用分子發射物質的實例包括簡單有機分子如惠、嗓二 唑衍生物及薰草素衍生物等已知表現電發光性。此外、錯 合物諸如8-羥基醌醇鹽帶三價金屬離子特別鋁者亦係適= 發射材料,例如在Tang等,us專利Μ52,6”中説明者。 有效聚合物發射物質例包括半導電共扼聚合物。適用半 導包共軛聚合物包括聚(次苯撐乙烯)、ppv、與ppv之可溶 性衍生物如聚(2-甲氧-5_(2,/乙代己氧)丄^次苯撐乙 烯)、MEH-PPV,一種能量間隙Eg〜21 eV的半導電聚合 物。此物質在 Wudl,F·,H〇ger,s,Zhang,c,pakbaz,κ,Ce) to (ie Lu). Preferred lanthanide metals include praseodymium (ie, Sm), yttrium (ie, Yb), and neodymium (ie, Nd). As used herein, "lanthanide metal oxides are conventionally referred to as lanthanide metal and oxygen foot compounds. For convenience, lanthanide metal oxides are indicated with a chemical formula equivalent to a +3 valence oxide (for example, Sm2 03, Yb2 0 ^ Nd2〇3); but this simple oxide data is intended to cover other oxides, including mixed oxides and non-stoichiometric oxides (for example, Smx〇, Ybx〇, and Ndy〇), whose X is about 0.1 to about 1.5). In a preferred embodiment, the first cathode layer 142 contains a low work function metal oxide. The first cathode layer 142 can typically be deposited by heating and evaporating. The first cathode layer 142 typically has a thickness from about 10 to 200 people. Typical evaporation / deposition rate is about 0.2 to about 4 A per second.-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, similar to the translucent layer 1 26, and the second cathode layer i 44 has a high reflectance and High work function, made of materials that can form smooth continuous films. The second cathode layer 144 typically has a work function greater than 4 eV. In a preferred embodiment, the second cathode layer 144 has a reflectance of at least 91.4% at the emission wavelength. Emission wavelength of the second cathode layer in two preferred embodiments There is a reflectance between 92% and 96.5%. The third preferred /, the first cathode layer in the group has a reflectance at the emission wavelength between 94% and 9 6.5 0 / 〇. Within the fourth preferred specific example The reflectance of the second cathode layer is greater than 96/0 at the emission wavelength. In another specific example, a metal having an reflectance of at least 86% at an emission wavelength from 400 nm to 500 nm is used as the second cathode layer 144 For example, the same translucent layer 126 and the second cathode layer 144 contain a cathode material selected from metals and metal alloys. Examples of suitable working function metals include aluminum, silver, copper, gold and the like and alloys of these metals A preferred specific example is a metal with a reflectance of at least 9 丨 4% at j emission wavelength -10- 297 mm) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇493289 A7 B7) V. Description of the invention (8 or a metal alloy that doubles as a translucent layer 126 and a second cathode layer 144. Another preferred embodiment is a metal that has a reflectance of at least 86% at an emission wavelength from 400 nm to 5000 nm and also serves as a translucent layer. n6 and used as the second cathode layer 144. Generally, the second cathode layer 144 need not be the same material used for the translucent layer 126. For example, gold can be used as a semi-transparent anode with a high work function, and silver can be used as a retroreflective metal layer in a double-layer cathode. Better—In the specific example, the high reflectance layer 丄 42 has a reflectance of at least 91.4% or 400- A metal with an reflectance of at least 86% at an emission wavelength of 500 nm is used as both the second cathode layer 144 and the translucent layer 126. In a more specific embodiment, silver (Ag) is also used as a high reflectivity metal layer in a double-layer cathode. It can be used as a semi-bright cathode. Alternatively, a multilayer cathode system (not shown) can be used. For example, the first high-reflectivity cathode layer (preferably thick enough to be opaque) can be the layer of another high-reverse cathode layer. The cover can be higher than the first and the cathode layer may or may not be more reflective: in the three-layer cathode capping configuration, the top metal may form a smooth connection. Any stable metal such as aluminum or aluminum alloy. Subsequent levels can perform specific functions = heart plus, for example for passivation and closed I placement. The routine G used to close the device level includes a stable capping layer. "窆 i is stable, the term refers to a protective cover layer that prevents the surrounding oxygen and moisture that may be present around the device. Suitable materials for the 蛊 layer include metals or metal alloys. Only as the ~ translucent layer 126, The second cathode layer 144 can be manufactured by known technology. The typical rate of evaporation / distillation is from about 1-20 A / sec. The second cathode layer 144 < thickness ^ should be sufficient to cover the first cathode Layer is sufficiently opaque at the relevant wavelength to produce high reflectance. The second cathode layer typically has a thickness of at least about 800A. The emission t is 11-(210 x 297 mm) (please read the note on the back first to write this page) Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 493289 A7 V. Description of the invention (9) At least the emission layer 13 of the LED of the present invention (also referred to as a light-emitting layer or electro-optic containing-electro-luminous, semi-conductive organic substance. Within ㈣ The materials used for the working layer usually include polymer or molecular materials that exhibit electroluminescence. More specific materials that exhibit electroluminescence are those whose soluble JL can be processed from solution to form a uniform film. Examples of combined molecular emitting materials include simple Organic molecules such as Hui, Diazole derivatives and humorin derivatives are known to exhibit electroluminescence. In addition, complexes such as 8-hydroxyquinolate with trivalent metal ions and especially aluminum are also suitable = emitting materials, such as in Tang, etc. US patent M52,6 ". Examples of effective polymer emitting materials include semiconducting conjugated polymers. Suitable semiconducting package conjugated polymers include poly (phenylene vinylene), pPV, and soluble derivatives of pPV, such as Poly (2-methoxy-5_ (2, / ethylhexyloxy) phenylene vinylene), MEH-PPV, a semi-conductive polymer with energy gap Eg ~ 21 eV. This material is in Wudl, F ·, H〇ger, s, Zhang, c, pakbaz, κ,

Heeger,A. J·,P〇lymer Prepdnts,1993, 34 (n〇1),i97 中更詳 敘述。此用途中所述另一有效材料爲聚(2,5_雙(膽甾烷氧卜 1,4-次苯撐乙烯BCHA_PPV,一能量間隙Eg〜2.2〜之半導電 聚合物。此物質在美國專利5,189,136號内較詳説明。其他' 通當聚合物包括例如聚(3_烷基嘧吩)由Β_η,D.,Heeger, A.J., Polymer Prepdnts, 1993, 34 (n〇1), i97 are described in more detail. Another effective material mentioned in this application is poly (2,5_bis (cholestaneoxyb 1,4-phenylene vinylene BCHA_PPV, a semi-conductive polymer with an energy gap Eg ~ 2.2 ~. This material is in the United States More detailed descriptions are found in Patent No. 5,189,136. Other 'common polymers include, for example, poly (3-alkylpyrimidine) by β_η, D.,

Gustafsson,G·,McBranch D·,與Heeger,A· J·,“聚(3 - 口塞吩) 一 # g 發光粤電輸送,,J. Appl Phys,1992,72,· 564 説 明’永(對次苯)經 Grem,G.,Leditzky,G·,Ullrich; B·,及 Leising,G”“ 欠苯)實現發藍光的裝Adv. Mater., 1992,4,36説明’及其可溶性衍生物如¥扣匕2;.,8(^〇仙,1., 及Karasz,F.E·,“互性發藍光之聚合物” Macromolecules, -12- 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) I I I-J I I — — — — — — · I 1 (請先閱讀背面灸意事寫本頁} 二· 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 493289 五、發明說明(10) 1993, 26, 1 188説明;及聚p奎啉如Μ% ! d ^ 、ys· Lett·’ 1994, 65, m2。共軛半導性聚合物與非共軛群 或载體聚合物之掺混物亦可用作LED聚合物内活性層,如Gustafsson, G., McBranch D., and Heeger, A. J., "Po (3-mouth stopphene) a #g luminous Yudean transport," J. Appl Phys, 1992, 72, · 564 states' yong ( Paraphenylene) Grem, G., Leditzky, G., Ullrich; B., and Leising, G. "Under benzene) to achieve blue light emission Adv. Mater., 1992,4,36 'and its soluble derivative Objects such as ¥ dagger 2;., 8 (^ 〇 仙, 1., and Karasz, FE ·, "mutually emitting blue light polymer" Macromolecules, -12- This paper size applies to China National Standard (CNS) A4 specifications (210 x 297 mm) II IJ II — — — — — — · I 1 (Please read this article on the back of moxibustion and write this page first) II. • Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the cooperative 493289 V. Description of the invention (10) 1993, 26, 1 188; and poly p-quinoline such as M%! D ^, ys · Let · '1994, 65, m2. Conjugated semiconducting polymers and Blends of non-conjugated groups or carrier polymers can also be used as active layers in LED polymers, such as

Zhang, C„ von Seggern: H., Pakbaz, K„ Kraabel, B., ScLdt, I ger’ A. J·’ 苯基希)在聚(9_ 内的摻合物之藍色電發色二極管” SyntheticZhang, C „von Seggern: H., Pakbaz, K„ Kraabel, B., ScLdt, I ger 'A. J ·' Phenyl) in poly (9_ blue electrochromic diodes ” Synthetic

Methals,1994,62,35敌述。亦可用本—弋夕 λλ 兀j用s 一或多種共軛聚合物 的摻混物如Yu·,G·,與Heeger A J “本逡地取人 g,A. J.,物製高效Methals, 1994, 62, 35. It is also possible to use a blend of λλ and s, one or more conjugated polymers, such as Yu ·, G ·, and Heeger A J. "Natively take people g, A. J., efficient production

Synthetic Metals,1997, 85, 1 183說明。 一具體例内電發光有機物質係_一電發光半導性有機聚合 物,其聚合物係一π-共軛聚合物或係其中含共軛部分= 段之共聚物。共軛聚合物爲技術上所熟知。適宜電發2半 導係有機聚合物包括但不限於: 私又 ⑴聚(Ρ-次苯撐乙晞)及其在次苯基上各位處取代的衍生 物; (ii) 聚卜次苯撐乙及其在撑⑽基上各位經取代之衍 生物; (iii) 聚(P-次苯撐乙烯)及其在次苯撐基上各位經取代、亦 在乙晞撐基上各位經取代的衍生物; ㈣聚(次芳樓乙晞),其中次芳可係蕃1'、。夫喃次”塞 嗯次、4二唑等基; ⑺聚(次芳撐乙晞)之衍生物,其中次芳可如以上(w)及次 芳上各位另有取代基者; -13- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) ----Γ.ί ^-------裝—— (請先閱讀背面之注意事寫本頁) *1^. •線· 493289 •A7 B7 五、發明說明(11 (Vi)聚(次芳撐乙烯)的衍生物,其中次芳可同上(iv)及撐 乙烯上各位另有取代基者; ^ (vii) 聚(次芳撐乙烯)之衍生物,其中次芳可同上(iv)及次 芳上各位與撐乙烯上各位另有取代基者; (viii) 次芳撐乙晞齊聚物的共聚物諸如(iv)、、(vi)及(vii) 内無共軛之齊聚物者; (IX) 聚(p -次苯)與次苯基上各位經取代之衍生物,包括梯 式聚合物衍生物如聚(9,9-二烷基第)之類; (X) 聚(次芳)其中次芳可係如莕、蒽、呋喃烯、噻嗯晞、 p号一吐之類;及其等在次芳部分上各位處取代的衍生物; (xi) 齊聚次芳之共聚物諸如其在·(χ)内無共軛齊聚物者; (xii) 聚峻琳與其衍生物; (X111)聚喳啉與次苯上有例如烷基或烷氧基等取代以提供 溶解度的p -次苯共聚物; (xiv)剛性棒狀聚合物諸如聚(p -次苯_2冬苯并雙嘧唑)、 聚(p-次苯-2,6-苯幷雙呤啉);聚(p_次苯_2,6_苯幷咪唑), 及其等衍生物;等類。 亦適用半電導性共軛皂合物有分開分子,有不同分子化 合物摻混半導性共軛聚合物或經由共價鍵共價連接者。亦 有效用聚(苐)衍生物。見例如us專利5,777,_ ; 5,708,130 ;及5,900,327號等。 -具體例中電發光半導性有機材料爲—電發光、半 有機聚石物。較佳具體例内電發弁车道 仏元牛導性有機材料係選自 聚(P-次苯撐乙晞)、聚(次芳撐乙晞 /寸竹選自 ; 來(P _次苯)類及聚 -14 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公^7 --/---r J---------- (請先閱讀背面之注拳寫本頁) . -I線· 經濟部智慧財產局員工消費合作社印製 493289 五、發明說明(12) (次芳)類等。 血發t層亦可含其他物質如載體聚合物與添加劑。發射屏 ii ——.-------^i — (請先閱讀背面之注意事寫本頁) ”生:厚度約600至約1100A,視發射户斤需波長以及孔 小而定。 7 發射層典型能用技術上所知任何方法製作,尤 子及有機聚合物]LED技術上已知之諸法, 〃、: 直接洗鑄,及料聚合物後經反應 ^ 物。 …)义成所需聚合 "吾人已發現用一含至少一超薄層低工作函數金屬或金屬 乳化物(供有效電子注射)覆蓋一高反射率金屬的多声陰 極’連同-含半透明,高反,率-金屬層m 二: 雷子注射,高反射t高Q於微模槽構造内,從^呈二 效率與進步照射。相信一微模槽效# ^ *光 〜 彳日~欢您促進發光效率與亮 度β裝置的半透明金屬陽極與陰極雙層之相對高率处 線· 形成高效能聚合物LED。微模槽_ 生發射先帶寬度之f化。窄化結果改變發射大半光子的波 長至人眼更敏感區(見圖2),以致大幅升高光發射結構之發 =效率。傳統結構中以同-發光聚合物所製聚合物LED的 寬電發光光譜表現於圖3供對照。 經濟部智慧財產局員工消費合作社印製 囊封 本發明之LED典型宜囊封以預防長期降解。技術上週知呼 多囊封方法。例如,裝置能密封於玻片間,或密封於障壁 聚合物層中間。 罕土 15Synthetic Metals, 1997, 85, 1 183. In a specific example, the electroluminescent organic substance system is an electroluminescent semiconductive organic polymer whose polymer is a π-conjugated polymer or a copolymer having a conjugated moiety = segment therein. Conjugated polymers are well known in the art. Suitable dendron 2 semiconducting organic polymers include, but are not limited to, poly (p-phenylene ethene) and its derivatives substituted on phenylene; (ii) polyphenylene phenylene B and its substituted derivatives on the fluorenyl group; (iii) poly (P-phenylenevinylene) and its substituted on the phenylene group, and also on acetylene; Derivatives; Luju (Zifanglou Yiyi), where Zifang can be Fan 1 '. "Fuman", xenazine, 4-diazole and other groups; Derivatives of poly (subaryleneacetamidine), in which the subaryl can be as above (w) and those with other substituents on the subaryl; -13- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 public love) ---- Γ.ί ^ ------- installation-(Please read the note on the back first to write this page) * 1 ^. • line · 493289 • A7 B7 V. Description of the invention (11 (Vi) poly (subarylene vinylene) derivatives, in which the subaryl can be the same as above (iv) and those with other substituents on vinylidene; ^ (vii) Derivatives of poly (subarylene), in which the subaryl may be the same as (iv) and those on the subaryl and ethylene have other substituents; (viii) the subarylene ethylene oligomer Copolymers such as (iv), (vi) and (vii) without conjugated oligomers; (IX) poly (p-phenylene) and substituted derivatives of phenylene, including ladders Polymer derivatives such as poly (9,9-dialkylidene) and the like; (X) poly (subarylene) where the sub-aromatics can be fluorene, anthracene, furanene, thionine, p-one, etc. ; And its derivatives substituted on the subaromatic moiety; (xi) oligomeric sub-aromatic copolymers such as those without conjugated oligomers in (x); (xii) polyjunlin and its derivatives; (X111) polyoxoline and phenylene have, for example, alkyl groups or P-phenylene copolymers substituted with alkoxy groups and the like to provide solubility; (xiv) rigid rod polymers such as poly (p-phenylene_2 winterbenzobispyrazole), poly (p-phenylene-2, 6-benzimidin); poly (p_phenylene_2,6_benzimidazole), and its derivatives; etc. It is also suitable for semi-conductive conjugated soaps with separate molecules and different Molecular compounds blended with semiconductive conjugated polymers or covalently linked via covalent bonds. Poly (fluorene) derivatives are also effective. See, for example, US patents 5,777, _; 5,708,130; and 5,900,327. Etc. -Specific The electroluminescent semi-conductive organic materials in the example are-electroluminescent, semi-organic polyliths. In the preferred embodiment, the electro-conductive semi-conductive organic materials are selected from the group consisting of poly (P-phenylene ethylene), Poly (secondary acetamidine / inch bamboo) is selected from; (P _ subphenylene) and poly-14 This paper size is applicable to China National Standard (CNS) A4 specifications (210 X 297 public ^ 7-/ --- r J ---------- (please first Read the note on the back and write this page). -I line · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed 493289 V. Description of the invention (12) (sub-fragrant), etc. The t-layer of hair can also contain other substances such as carriers Polymers and additives. Emission screen ii ——.------- ^ i — (Please read the note on the back first to write this page) "Health: thickness of about 600 to about 1100A, depending on the wavelength required by the user and The holes are small. 7 The emission layer can typically be made by any method known in the art, especially in organic and organic polymers] methods known in LED technology, such as: direct washing and casting, and reacting the polymer after it has been polymerized. …) Yicheng's desired polymerization " I have found that a polyacoustic cathode covering a high reflectivity metal with at least one ultra-thin layer of low work function metal or metal emulsion (for effective electron injection) together with-including translucent , High reflectance, rate-metal layer m II: Thunderbolt injection, high reflection t high Q in the micro-mold groove structure, from ^ to two efficiency and improved irradiation. It is believed that a micromode slot effect # ^ * light ~ the next day ~ to promote the luminous efficiency and brightness β device semi-transparent metal anode and cathode double-layer high relative rate of the device · formation of high-performance polymer LED. Micro-mold slot_ The f-band of the band is generated first. The narrowing results change the wavelength of the emitted most photons to the more sensitive area of the human eye (see Figure 2), so that the light emitting structure's emission = efficiency is greatly increased. The broad electroluminescence spectrum of a polymer LED made with a homo-luminescent polymer in a conventional structure is shown in Fig. 3 for comparison. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics Encapsulation The LEDs of the present invention are typically encapsulated to prevent long-term degradation. Techniques are well known in the art for multi-encapsulation methods. For example, the device can be sealed between glass slides, or between barrier polymer layers. Rare Earth 15

493289 Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明說明(13) 實例 以下實例説明本發明某些特色與優點。旨在例證本發明 而非限制。 * 式 後文實例與對照例中按下述程序決定下列量度: : 用一UDT S370 視力計(得自 CA,San Dieg0 的 Gamma Scientific支部UDT)測量效率,其中含一光二極管用下述程 序校正。光二極管經校正如下··用一 1^13丁校正的光源有已 知均勻光發射。用一光罩使僅發射像素作用區大小之光 束。光二極管放在離光設定距離處,記錄伏特數。於是知 曉相當於特定光度(34〇 cd/m2)的伏特數。 _ _照射: 用Newport光二極管(得自Irvine,以的心卿⑽c〇rp⑽ 測量照射。 作業生存期測試時led用一環氧樹脂而與玻璃蓋密封。進 行生存期試驗在空氣中對個別像素在裝置内電流不變,〇·5· mesc脈動,0.5%負荷週期,每像素5 mA。一像素衰變至零 光產:!:所需時間係用UDT S370視加計以校正之光二極管測 量。 對照例A 、製作一聚合物LED裝置如下··在一部分塗覆IT〇的玻璃基 底上,在空氣内於6000 rpm旋轉塗覆一聚(笨胺)摻混物溶液 (一般製法説明見US專利5,626,795號)。所得膜於5〇ό熱板 -16- (請先閱讀背面之注意事 裝—— 寫本頁) . -丨線. 本纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 493289 A7 B7 五、發明說明(14 上乾燥3 0分鐘後眞空下在7 〇。〇過夜。以得自德國Frankfurt, Covion有機半導體公司之covion PD0 122甲苯溶液於1800 rpm旋轉塗覆於(氮手套箱内)pAni薄膜上。膜於室溫中眞 2下乾燥1小時。蒸氣澱積一鎖陰極在Covion PDO 122的聚 合膜上至30埃厚。鋇層上面蒸氣澱積3,〇〇〇A厚鋁層。 • 對照例B 如對照例A製一聚合物LED裝置,惟以厚3,000A之蒸氣殿 積銀層替代鋁。 實例1 經濟部智慧財產局員工消費合作社印製 如對照例A製一聚合物LED裝置 積銀層替代ITO。 — 實例2 如對照例A製一聚合物LED裝置 厚300A的銀層。此裝置之績效與實例1及3相彷如下説明。 實例3 按實例1或2所述製一聚合物LED裝置,惟以厚3,〇〇〇A的 蒸氣澱積銀層替代銘層。 測量此等裝置之效率,摘述於表1 : 表1 0.3 mA的裝置效率(cd/A)與作業電壓 實例編號—0.3 mA之效率(cd/A)___—伏) 惟以厚300A之蒸氣澱 惟在ITO上面蒸氣澱積 I JI —J-------裝—— (請先閱讀背面之注拳寫本頁) . ί線- 對照例A 對照例B 實例1 實例3 5.25 4.54 5.9 9.5 11.3 9.6 10.2 10.4 -17- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) 493289 A7 ----— R7___ 五、發明說明(15 ) 曰上表丨證^月以300A銀替代IT〇(但留銘在位)多少改進出光 f,產生党度提升1 2 % (即對照例Α相對實例丨)。但在實 例3所述結構之裝置中獲得進步最堪注目,其中用一銀陽 極,銀爲雙層陰極結構内所用高反射率金屬。實例3之裝置 比對照例A裝置者更亮8 0 %以上。表i亦例證單以銀在陰極 側替換鈕(對照例A相對B )而保留陽極側不變並不改善裝置 的效率。事實上出光量減少。 貫例1與3裝置中發射亦經測得輻射量單位(w/Sr/m2),其 測量忽略人眼感應之影響而以絕對術語測量出光量。結果 摘述於下表2。注意自根據本發明(實例3 )所製裝置的照射 比自傳統聚合物LED結構用同一發光聚合物j斤製裝置發出 者大2.5倍。 圖4表現由實例3裝置之電發光光譜。注意圖3内所見光镨 相對的電光發射變窄,雖然二裝置中使用相同發射聚合 物。相信實例3内微模槽中Covion PDO 122的侷限產生發射 窄化。 表2 裝置的照射 實例編號_裝置的0.3 mA(W/Sr/m2)之照射 對照例A ,32 對照例B 28 實例1 41 實例3 102 對照例c 按對照例A製一聚合物LED裝置,惟用半導電共軛聚合物 -18- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) (請先閱讀背面之注意事 裝—— 寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 ^3289 A7493289 Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (13) Examples The following examples illustrate some of the features and advantages of the present invention. It is intended to illustrate the invention and not to limit it. * In the examples and comparative examples below, the following measurements are determined according to the following procedure:: The efficiency is measured with a UDT S370 visual acuity meter (available from CA, Gamma Scientific Division of San Dieg0), which contains a photodiode and is calibrated with the following procedure . The photodiode is calibrated as follows: A 1 ^ 13 D-corrected light source has a known uniform light emission. A reticle is used to emit only the size of the pixel active area. The photodiode is placed at a set distance from the light and the volts are recorded. Then you know the number of volts corresponding to a specific luminosity (34 cd / m2). _ _ Irradiation: Newport photodiodes (available from Irvine, Xinxin ⑽corp⑽) were used to measure the exposure. The LED was sealed with an epoxy resin and a glass cover during the life test of the job. A life test was performed on individual pixels in the air. The current in the device does not change, 0.5 msc pulsation, 0.5% duty cycle, 5 mA per pixel. One pixel decays to zero light yield:!: The required time is measured with a calibrated photodiode using UDT S370. Comparative Example A. A polymer LED device was made as follows: · On a part of a glass substrate coated with IT0, a poly (benzylamine) blend solution was spin-coated in air at 6000 rpm (for general manufacturing method, see US patent) No. 5,626,795). The obtained film is on 5〇hot hot plate -16- (Please read the note on the back-write this page first).-丨 line. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) 493289 A7 B7 V. Description of the invention (14 for 30 minutes after drying for 30 minutes at 70 ° C. overnight. Covion PD0 122 toluene solution from Covion Organic Semiconductor Company, Frankfurt, Germany was spin-coated at 1800 rpm Covered in (nitrogen glove box ) On pAni film. The film was dried at room temperature for 2 hours. Vapor deposition was performed on the polymer film of Covion PDO 122 to a thickness of 30 angstroms. 3,000 A thick aluminum was vapor deposited on the barium layer. • Comparative Example B A polymer LED device was made as in Comparative Example A, but the aluminum was replaced by a vapor layer of 3,000 A thick vapor. Example 1 An employee's cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed a polymer as in Comparative Example A. The silver layer of the physical LED device replaces ITO. — Example 2 A polymer LED device with a silver thickness of 300A is made as in Comparative Example A. The performance of this device is similar to that of Examples 1 and 3, as described below. Example 3 According to Example 1 or 2 A polymer LED device was fabricated, but the silver layer was replaced by a vapor deposited silver layer with a thickness of 3,000 A. The efficiency of these devices was measured and summarized in Table 1: Table 1 0.3 mA device efficiency (cd / A ) And working voltage instance number—0.3 mA efficiency (cd / A) ___— Volt. But with 300A thick vapor deposition, but on ITO vapor deposition I JI —J ------- installation— (please First read the Note Boxing on the back to write this page). Ί Line-Comparative Example A Comparative Example B Example 1 Example 3 5.25 4.54 5.9 9.5 11.3 9.6 10.2 10.4 -17- this The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public love) 493289 A7 ----— R7___ V. Description of the invention (15) The above table 丨 certificate replaces IT with 300A silver month (but keep the name In-place) How much improved the light output f, resulting in a 12% increase in party level (ie, comparative example A relative example 丨). However, the most remarkable progress has been achieved in the device of the structure described in Example 3, in which a silver anode is used, and silver is a highly reflective metal used in a double-layer cathode structure. The device of Example 3 was more than 80% brighter than the device of Comparative Example A. Table i also illustrates that simply replacing the button on the cathode side with silver (Comparative Example A vs. B) and leaving the anode side unchanged does not improve the efficiency of the device. The amount of light actually decreases. The emissions in the devices of Examples 1 and 3 have also been measured in units of radiation quantity (w / Sr / m2). The measurement ignores the influence of human eye induction and measures the amount of light in absolute terms. The results are summarized in Table 2 below. Note that the irradiation from a device made according to the present invention (Example 3) is 2.5 times larger than that emitted from a conventional polymer LED structure using the same light-emitting polymer. Figure 4 shows the electroluminescence spectrum of the device of Example 3. Note that the relative electro-optical emission seen in Figure 3 is narrower, although the same emitting polymer is used in both devices. It is believed that the limitation of the Covion PDO 122 in the micromould slot in Example 3 results in emission narrowing. Table 2 Irradiation example number of the device _ Irradiation of 0.3 mA (W / Sr / m2) of the device Comparative Example A, 32 Comparative Example B 28 Example 1 41 Example 3 102 Comparative Example c A polymer LED device was manufactured according to Comparative Example A. Only use semi-conductive conjugated polymer-18- This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 public love) (Please read the note on the back-write this page) Order the intellectual property of the Ministry of Economic Affairs Printed by the Bureau's Consumer Cooperatives ^ 3289 A7

五、發明說明(16 ) 馬CoWcm PDY 131,得自c〇vi〇n有機半導體公司(德國法蘭 克福)’ Covion PDY 131膜於3,000 rpm旋轉塗覆。鋇層厚 15A 。 ‘曰予 此裝置的電發光光譜顯示於圖5。 實例4 按實例3製一聚合物LED裝置惟所用半導電共軛聚合物爲 CoWon PDY 131,Covion PDY 131膜係於 3,〇〇〇 rpm旋轉塗 覆。B a厚 15A。 此裝置之電發光光譜表現於圖6。 表3 實例中裝置於0.3 mA的效率(cd/A)與作業電壓 實例編號 效率(cd/A) ϋ n . IJ IB·· I MB 襲 · I (請先閱讀背面之注意事寫本頁) 對照例C 實例4 電壓(V) 實例編號 對照例C實例4 10.8 27.4 表4 實例中裝置的照射 裝置的0.3 mA(W/Sr7m2>)·^照射 8.9 10 訂: 36 83V. Description of the invention (16) CoWcm PDY 131, available from Covion Organic Semiconductor Company (Frankfurt, Germany) 'Covion PDY 131 film was spin-coated at 3,000 rpm. The barium layer is 15A thick. The electroluminescence spectrum of this device is shown in FIG. Example 4 A polymer LED device was made according to Example 3 except that the semiconductive conjugated polymer used was CoWon PDY 131, and the Covion PDY 131 film was spin-coated at 3,000 rpm. B a is 15A thick. The electroluminescence spectrum of this device is shown in FIG. 6. Table 3 The efficiency (cd / A) of the device installed at 0.3 mA and the numbering efficiency of the operating voltage instance (cd / A) ϋ n. IJ IB ·· I MB · I (Please read the note on the back first and write this page) Comparative example C Example 4 Voltage (V) Example number Comparative example C Example 4 10.8 27.4 Table 4 0.3 mA (W / Sr7m2 >) · irradiation of the irradiation device of the example 8.9 10 Order: 36 83

經濟部智慧財產局員工消費合作社印製 以上表3與4顯示對照例C及實例4裝置所得結果。可 發明不限於一種半導電聚合物,因出光量方面重要改盖2 經另-半電導聚合物實現]時陰極加蓋金屬自鋁改:: 銀,且陽極處ITO由銀替代。實例4中裝置發揮亮光#二馬 對照例C内裝置者大2.5倍(表3 ) 欠率比 實例4與對照例C裝置經測量發光量對電壓(l_ )線,量 本紙張尺度適用中國國家標準(CNS)A4規格(210 -19- 493289Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Tables 3 and 4 above show the results obtained for the devices of Comparative Example C and Example 4. However, the invention is not limited to a semi-conductive polymer, but it is important to change the cover due to the amount of light. 2 The cathode-capping metal is changed from aluminum: silver, and the ITO at the anode is replaced by silver. The device in Example 4 exerts bright light # 二 马 Comparative device C is 2.5 times larger than that of the device in Table C (Table 3) The undercharge rate is greater than the measured luminescence versus voltage (l_) line of the devices of Example 4 and Comparative Example C. The paper size is applicable to China Standard (CNS) A4 Specification (210 -19- 493289

五、發明說明(17) 度顯現於圖7。圖7内數撼七义 』数跟4明重大的高亮度係得 所製裝置。 - 下表5證明實例1與3之裝置有較長生存期且更穩定勝過含 ITO陽極層的對照裝置。^__5_ *㈣、%高電流(應力)條件下裝置之生存期 ——ίΐ^唬 -—___Β寺間比零^^ 對,例八 、 2.5小時 ί例1 試驗終端(1 5小時)尚未到達 貫例3 減驗終端(1 5小時)尚未到達 實例丨與3及對照例Α的裝置於認係非常高電流條件(〇 msec脈動,0.5%負荷週期,每像素5 mA)下測試以加速老」 過程能作許多裝置之試驗。三種裝置中對照例A裝置發; 最少光且最快降至零(2.5小時後無光發射)。實例丨與3裝丨 在其全生存期間展現極不同情況。每種情況中亮度降低」 起始値之約50%,然後維持其水準。在實例1與3裝置的^ 案中於測試認已完全前仍未到達衰退點。 因此,一般雖以ITO作陽極層優於銀,本發明獲得以銀、彳 構比用ITO裝置進步的作業生存期。 —^——--------裝·--- (請先閱讀背面之注寒寫本頁) 經濟部智慧財產局員工消費合作社印製 訂---------線----------:— -20 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -n I n n ϋ I I I n n ·Fifth, the description of the invention (17) is shown in Figure 7. The figure 7 in Figure 7 is a device made with a high brightness of 4 points. -Table 5 below demonstrates that the devices of Examples 1 and 3 have a longer lifetime and are more stable than the control device containing the ITO anode layer. ^ __ 5_ * ㈣,% lifetime of the device under high current (stress) conditions——ίΐ ^ bluff -______ intertemporal ratio is zero ^^ Example 8, 2.5 hours Example 1 The test terminal (15 hours) has not yet arrived Example 3 The subtraction test terminal (15 hours) has not yet reached the example 丨 The devices of 3 and Comparative Example A were tested under the condition of very high current (0msec pulsation, 0.5% duty cycle, 5 mA per pixel) to accelerate the aging The process can be tested on many devices. Among the three devices, the device of Comparative Example A emits light with the least light and the fastest reduction to zero (no light emission after 2.5 hours). Examples 丨 and 3 packs show very different situations during their full survival. The brightness decreases in each case "about 50% of the initial threshold and then maintained at its level. In the case of the devices of Examples 1 and 3, the regression point has not been reached before testing is complete. Therefore, although ITO is generally used as the anode layer over silver, the present invention achieves an improved operating life time using an ITO device with a silver and hafnium ratio. — ^ ——-------- Equipped · --- (Please read the note on the back to write this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy --------- 线- ---------: — -20 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -n I nn ϋ III nn ·

Claims (1)

D8 、申請專利範圍 L —種發光裝置(100),包括一陽極(120)含有高反射率鱼合 =作函數的半透明層(122),及一陰椏(14〇)含選自金屬同 金屬氧化物與其組合之低工作函數材料的至少一種第一 陰極層(142)及有高反射率與高工作函數之_種=: 層(144)。 2. 根據申請專利範圍第i項裝置,其中半透明層有工、 數大於4 eV。 ^ 3. 根據申請專利範圍第丨項之裝置,其中半透明層包含陽 極材料選自金屬與金屬合金。 ^ 4. 根據申請專利範圍第1項之裝置,其中第二陰極層有工 作函數大於4 & V。 · 5. 根據申請專利範圍第丨項之裝置,其中第二陰極層含陰 極材料選自金屬與_金屬合金。 6·根據申請專利範圍第i項之裝置,其中裝置組件之至少 一項選自半透明層及至少一第二陰極層在發射波長處有 反射率至少91.4%。 經濟部智慧財產局員工消費合作社印製 7·根據申請專利範圍第丨項之裝置,其中裝置組件之至少 一項選自半考明層及昊少一第二陰極層在發射波長自 400至5 00 nm處有反射率至少86%。 8. 根據申請專利範圍第1項之裝置,,其中裝置組件之至少 一項選自半透明層及至少一第二陰極層含銀。· 9. 根據申請專利範圍第1項之裝置,其中半透明層有第一 奉面(124)鄰接陰極與一相反第二表面(126),及陽極另含 純化層(128)鄰接弟一表面’純化層含純化材料選自聚 21 - 本紙張尺度適用中國國豕祆準(CNS)A4規格(210 X 297公爱) 493289 A8 B8 C8 D8 t、申請專利範圍 (苯胺)、聚(苯胺)摻混物、聚噻吩、及聚嘍吩摻混物。 10.根據申請專利範圍第1項之裝置,其中半透明層有第一 表面鄰接陰極與一相反第二表面,及陽極另含一銦/氧 化錫透明層鄰接半透明層的第二表面。 (請先閱讀背面之注意事項寫本頁) 線 經濟部智慧財產局員工消費合作社印製 -22- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)D8. Patent application scope L—A kind of light-emitting device (100), including an anode (120) containing a semi-transparent layer (122) with a high reflectance and a function as a function, and a cathode (14) containing At least one first cathode layer (142) of a metal oxide and a combination thereof with a low work function material and a _species having a high reflectance and a high work function =: layer (144). 2. According to item i of the scope of the patent application, the translucent layer is working and the number is greater than 4 eV. ^ 3. The device according to item 丨 of the patent application, wherein the translucent layer comprises an anode material selected from metals and metal alloys. ^ 4. The device according to item 1 of the scope of patent application, wherein the second cathode layer has a working function greater than 4 & V. · 5. The device according to the scope of the patent application, wherein the second cathode layer contains an anode material selected from a metal and a metal alloy. 6. The device according to item i of the scope of patent application, wherein at least one of the device components is selected from a translucent layer and at least a second cathode layer having a reflectance at the emission wavelength of at least 91.4%. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy Reflectance at 00 nm is at least 86%. 8. The device according to item 1 of the patent application scope, wherein at least one of the device components is selected from the group consisting of a translucent layer and at least one second cathode layer containing silver. · 9. The device according to item 1 of the scope of patent application, in which the translucent layer has a first flat surface (124) adjacent to the cathode and an opposite second surface (126), and an anode containing a purification layer (128) adjacent to the first surface 'Purification layer contains purified material selected from poly 21-This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) 493289 A8 B8 C8 D8 t, patent application scope (aniline), poly (aniline) Blends, polythiophene, and polyfluorene blends. 10. The device according to item 1 of the scope of patent application, wherein the translucent layer has a first surface adjacent to the cathode and an opposite second surface, and the anode further comprises an indium / tin oxide transparent layer adjacent to the second surface of the translucent layer. (Please read the notes on the back first to write this page) LINE Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -22- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
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