TW436814B - A novel method for fabrication of germanium-68 sealed sources - Google Patents
A novel method for fabrication of germanium-68 sealed sources Download PDFInfo
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436B1Λ ^ 案 E89108488 年 H a ....................... ......- ..............................................................乂 ., [I] l-C- 五、發明說明(]) 1 .發明之領域 本發明為一種可應用於校正核子醫學診斷儀器—正子 放射斷層持 4田儀(Positron Eniission Tomography Scanner’簡稱PET)活度偵檢系統之鍺_68(tisGe)密封射源 的製作方法,尤指吸附在無機吸附劑二氧化石夕上之錯 -68’其衰變的子核種正子同位素鎵—68(li8Ga),能釋出兩 個特殊相對的加馬射線,能量為5 n keV,藉其加馬射線的 穿透性,可應用於校正PET掃描儀偵檢系統相關參數及活 度計测的衰減變化,提高儀器在臨床上擷取數據的準確性 及增進臨床應用判斷效果,為目前核子醫學診斷儀器理想 i的校正射源之一。 ^ ! | 2.發明之背景 | 鍺_68(68Ge)半衰期很長(t1/2 = 271d),經由原子核電 I子捕捉(Electron capture)衰變機制,可放出低能量又射 i 線(K„ 9_;]keV;K@ 10.3keV),生成子核種 68Ga(ti/2:;;= I 68.3m),平衡時《aGe可產生等活度esG &,形成核種對 I (Radionucl ide pair)。按“Ga衰變時,最大正子放射能 i β娜)為igMeV’經由(1)正子毁滅機制(pos;[tron a η n i h 1 1 a 11 〇 η ) ’釋出兩個相對方向之加馬射線,能量為 5 1 1 k e V ( ΐ η t e n s ί ΐ y 1 7 6 % );及經由(2 )電子捕捉機制,釋 出加馬射線’能量為1 Q 7 7 k e V ( I n t e n s i t y 3. 3 % );最後轉 I化為穩定同位素“Zn。藉由ssGa釋出加馬射線的穿透性,I i校正PET掃描儀偵檢系統活度計測相關參數如:計數玫率 (Counting e;ff;j;ciency)、放大係數(.Gain)、重·合時間 | (Coincidence time)及哀減校正(Attenuation436B1Λ ^ Case E89108488 H a .............-... ....................................... 乂., [I] LC- 5. Description of the invention (]) 1. Field of invention The present invention is a Positron Eniission Tomography Scanner (referred to as PET) activity that can be applied to the correction of nuclear medical diagnostic instruments-Positron Eniission Tomography Scanner (referred to as PET). Method for manufacturing germanium _68 (tisGe) sealed radioactive source of detection system, especially the absorption of the wrong nucleus species-68 isotope gallium-68 (li8Ga) adsorbed on the inorganic adsorbent stone dioxide, which can be released Two special opposite gamma rays, with an energy of 5 n keV, can be used to correct the relevant parameters of the PET scanner detection system and the attenuation change of the activity measurement by virtue of the penetrability of the gamma rays. The accuracy of clinically acquired data and the improvement of clinical application judgment are one of the ideal calibration sources for current nuclear medical diagnostic instruments. ^! | 2. Background of the invention | Germanium_68 (68Ge) has a very long half-life (t1 / 2 = 271d). It can emit low energy and emit i-rays through the decay mechanism of the nuclear capture of the electron capture (Electron capture). 9 _;] keV; K @ 10.3keV), generating daughter nucleus 68Ga (ti / 2: ;; = I 68.3m), at equilibrium, "aGe can produce isoactivity esG &, forming nucleus pair I (Radionucl ide pair) . According to "When Ga decays, the maximum positron radiant energy i βna) is igMeV 'through (1) positron destruction mechanism (pos; [tron a η nih 1 1 a 11 〇η)' releases two horses in opposite directions. Ray with an energy of 5 1 1 ke V (ΐ η tens ί y y 1 7 6%); and through (2) the electron capture mechanism, the gamma rays are released with an energy of 1 Q 7 7 ke V (I ntensity 3. 3%); finally converted to stable isotope "Zn. By ssGa release Gama rays penetrability, I i corrected PET scanner detection system activity measurement related parameters such as: Counting e; ff; j; ciency), amplification factor (.Gain), coincidence time | (Coincidence time), and attenuation correction (Attenuation
第7頁 4368,1 4 ..................................室—薄..89108488..................................................壬―—_J_— —0......................— f-iL _________________ ______________— 五、發明說明(2) correction)等。b8Ge由於半衰期極長,此種密封射源有效 使用時間可長違一年以上。 密封射源的製作,基本要求在於射源能否穩定均勻分 佈於介質,容易裝填操作,且無放射性物質洩漏顧慮。傳 統上應用於PET掃描儀偵檢系統的校正射源,包括使用放 射正子之同位素6%&(:13及 iaF-FDG[t1/2= 109. 8m ; 511keV (194%)]等液態射源,前者可自usGe/68Ga核種發生器 (Radionuclide g e n e r a t o r )以稀酸淘洗而獲得,後者須經 由迴旋加速器照射核反應180 ( p,n)18F中分離製備。由於兩 者皆為液態,活度分佈均勻性高為其優點,惟半衰期皆太 短,須例行製備,且液態射源分裝操作,容易造成放射性 洩漏污染,極不方便。 : 目前商用eaGe密封射源產品中,主要製作方法有三'種 丨如由 S. Mir jadeh等人於 1996 年在 ''Radiochemistry of German ium" ,(J. Radioanal. & Nu cl. Che in., Article, 2 0 2,7 )綜合性報導一文中所發表的:(1 ) % e配製在適當電 解質溶液,電鍍於鎳金屬箔或管,經真空加熱處理;(2) esG e配製在適當溶液條件下,吸附於離子交換樹脂;(3 ) esGe溶液混合陶瓷物料,然後裝填於不銹鋼管内,予以密 封。在其他相關研究報導上,68Ge亦可在含氰化物稀鹼溶 液中,以esGeCu3合金電鍍於鎳金屬箔,例如由T. A.Page 7 4368,1 4 ........................ Room—thin .. 89108488 ... ...............................................Ren-- _J_— —0 ............— f-iL _________________ ______________— 5. Description of the invention (2) correction) and so on. Due to the extremely long half-life of b8Ge, this sealed source can be used for more than one year. The basic requirements for the production of sealed radioactive sources are whether the radioactive sources can be stably and uniformly distributed in the medium, easy to load and operate, and there is no concern about the leakage of radioactive materials. Calibration sources traditionally used in PET scanner detection systems, including liquid shots using radionuclide isotopes 6% & (: 13 and iaF-FDG [t1 / 2 = 109.8m; 511keV (194%)) Source, the former can be obtained from the usGe / 68Ga nuclear seed generator (Radionuclide generator) with dilute acid elutriation, the latter must be separated and prepared by cyclotron irradiation of nuclear reaction 180 (p, n) 18F. Because both are liquid, the activity Its high uniformity of distribution is its advantage, but its half-life is too short, it must be prepared routinely, and the liquid radio source packaging operation is easy to cause radioactive leakage pollution, which is extremely inconvenient .: The main production methods in commercial eaGe sealed radio source products There are three species, as comprehensively reported by S. Mir jadeh et al. In `` Radiochemistry of German ium " (J. Radioanal. &Amp; Nu cl. Che in., Article, 2 0 2, 7) in 1996. Published in the article: (1)% e is formulated in a suitable electrolyte solution, electroplated on a nickel metal foil or tube, and subjected to vacuum heating treatment; (2) esGe is formulated in an appropriate solution and adsorbed on an ion exchange resin; (3) esGe solution mixed ceramic material Is then loaded in a stainless steel tube to be sealed. Other studies reported, 68Ge may dilute the cyanide-containing alkaline solution, the nickel alloy plating to esGeCu3 metal foil, for example, a T. A.
Girard 等人於 1 9 8 3 年在、'Preparation of Intense S8Ga Positron Sources by Electrodeposit i.o n of B8G eCu3 ^ (Nu.cl. Instrun!, & Method, 205,567) —文中戶發表的; 或如KSGe配製在稀鹽酸溶液與適當組成之凝膠體,由R.S. ι^ϋ—Girard et al. In 1983, 'Preparation of Intense S8Ga Positron Sources by Electrodepositio n of B8G eCu3 ^ (Nu.cl. Instrun !, & Method, 205,567) —published by the author; or as formulated by KSGe Gels in dilute hydrochloric acid solution and appropriate composition, made of RS ι ^ ϋ—
4 3 68 1 ά ......89108488........................................................年...........................g..............................S..............................................魅........................................................... 五、發明說明(3)4 3 68 1 ά 89108488 ... ........ year ............... g ... ................ S ............ ............. Charm ............ ........................ V. Description of Invention (3)
Tilbury 等人於 1991 年在"Reusable Gels for Germanium-68 Sources"(Appl. Radiat. I sot. , 42, 1111 (19 9 1), Int. J. Radiat. Appl. Instrum. Part A,)—文 丨中所發表之聚乙二醇(Polyethylene glycol,PEG-1450)與 I明膠(G e i a t i η )混合物攪拌均勻後,注入容器内凝固密 封。- 綜合上述相關報導顯示,採用電鍍法製作saGe密封射 源,其製程較為複雜,而以離子交換樹脂為^Ge吸附介 質,其材質抗輻射性較差;⑽Ge直接與凝膠體混合攪拌 法,優點為膠體熔點低(<45°C),密封射源在使用一段時 間後,此膠體可溶融補充適當活度B8Ge再重覆運用,但缺 點為製程中須快速攪拌避免凝固,且膠體會沾黏器壁造成 e8Ge損失。 有鑑於此’遂有本發明採用無機吸附劑S i 〇2為68Ge吸 附介質之新穎製作方法的開發。雖然一些研究報導針對 eaGe/HSGa核種發生器之製備研究,使用的無機吸附劑種類 很多 > 包括 S i 02、Sn02、A 1203、a -Fe203、T i 02、Zr 02、 (OHh、Fe(0H)3等’但除了 SiO^在高濃度酸性溶液條 件下吸附iiSG e(請見前述S. Mirjadeh等人之文獻),其餘皆 在低濃度酸性溶液吸附MGe( g 或PH 2〜8)。 本發明採用S i Ο?,為吸附介質’主要著眼於製程中固體 照射無為G a / A g合金材料,易溶於高濃度確酸溶液(1 〇 μ HNOj),在W- L. Cheng等人於1999年4月^國馬利籣州Tilbury et al., In 1991, " Reusable Gels for Germanium-68 Sources " (Appl. Radiat. I sot., 42, 1111 (19 9 1), Int. J. Radiat. Appl. Instrum. Part A,) — After the mixture of Polyethylene glycol (PEG-1450) and I gelatin (G eiati η) published in the article was stirred well, it was injected into the container to be solidified and sealed. -According to the above related reports, the manufacturing process of the saGe sealed emission source by electroplating is complicated, and the ion-exchange resin is used as the ^ Ge adsorption medium, which has poor radiation resistance; 直接 Ge is directly mixed with the gel and stirred, the advantages The colloid has a low melting point (< 45 ° C). After using the sealed source for a period of time, this colloid can be melted to replenish the appropriate activity B8Ge and then used repeatedly. However, the disadvantage is that the process must be quickly stirred to avoid solidification, and the colloid will stick. The wall caused e8Ge loss. In view of this, a novel manufacturing method of the present invention using the inorganic adsorbent Si02 as a 68Ge adsorption medium was developed. Although some studies have reported on the preparation of eaGe / HSGa nuclear seed generators, many types of inorganic adsorbents are used> including Si 02, Sn02, A 1203, a-Fe203, Ti 02, Zr 02, (OHh, Fe ( 0H) 3, etc., except that SiO ^ adsorbs iiSG e under the condition of high-concentration acidic solution (see the aforementioned literature by S. Mirjadeh et al.), And others adsorb MGe (g or PH 2 ~ 8) in low-concentration acidic solution. The present invention uses S i 〇? As an adsorption medium, which mainly focuses on solid irradiation and non-reactive Ga / Ag alloy materials in the manufacturing process, and is easily soluble in high-concentration acid solution (10 μHNOj), in W-L. Cheng et al. People in April 1999
Bethesda舉辦第十屆Modern Trends in Actrvaiion Analysis 國際研討會發表之、、prearatiori of esGe/68GaBethesda hosted the 10th Modern Trends in Actrvaiion Analysis International Symposium, prearatiori of esGe / 68Ga
第9頁 436814 ? _案號 891Q 8488 __年月 日____ 五、發明說明(4)Page 9 436814? _ Case No. 891Q 8488 __Year Month Day ____ V. Description of the invention (4)
Generator with a Binary Ga/Ag E1ectrodepos i t i 〇ns I a s S o i i d ΐ a r g e t/y<曾論及,S i 02在此條件下對68G e之吸附 容量大,約為30mg Ge/g Si02,在P. Lievens等人於 年發表之”Selective Removal of Germanium by Retention on Silica Gel"(Anal. Ch i m. Acta, 7 0, 46 2 ( 1 9 74 ) — 文中亦有涉及,而 37MBq( lmCi ) “Ge僅相 當于1 . 4 x ΐ 0m g G e,且S i Q a具有高的抗輻射性質(g i 〇 5 Gy )、容易裝填及價格低廉等優點。 3.發明之目的: 從上述背景說明,本發明之主要目的,在製作—種安 全實用及操作方便的密封射源,提供核子醫學診斷儀 器-正子放射斷層掃描儀活度偵檢系統校正運用,提高儀 :器在臨床上擷取數據的準確性及增進臨床應用判斷效果。 |本發明之另一目的,在製作一種核子醫學診斷儀器_PET掃 描儀偵檢系統校正用密封射源,以落實研發技術本土化。 所使用的正子同位素⑽Ga能釋出兩個相對方向的加馬射 線,能量為5 1 1 keV,其母核種“Ge半衰期長,可在國内製 造、使用期限長達一年以上。 本發明之又一目的,在製作一種核子醫學診斷儀器 -PET掃描儀偵檢系统校正用密封射源,以選擇最佳吸附介 質,對e具有高的吸附容量、抗輻射性質、容易裝填及 價格低廉。 茲依照附圖先就本發明一種核子醫學診斷儀器„ P E T掃 描儀」貞檢系統校正用s8Ge密封射源使用裝置簡要..說明如 下:Generator with a Binary Ga / Ag E1ectrodepos iti 〇ns I as S oiid ΐ arget / y < had previously mentioned that Si 02 under this condition has a large adsorption capacity of 68G e, about 30mg Ge / g Si02, at P. Lievens and others published "Selective Removal of Germanium by Retention on Silica Gel" (Anal. Ch i m. Acta, 7 0, 46 2 (1 9 74) — it is also mentioned in the article, and 37MBq (lmCi) "Ge It is only equivalent to 1.4 x ΐ 0m g G e, and S i Q a has the advantages of high radiation resistance (gi 0 5 Gy), easy loading, and low price. 3. Purpose of the invention: From the above background, The main purpose of the present invention is to make a safe, practical and easy-to-operate sealed radioactive source, to provide a nuclear medicine diagnostic instrument-positron radiation tomography scanner activity detection system for calibration and use, and to improve the instrument: Accuracy and improve the effect of clinical application judgment. | Another object of the present invention is to produce a nuclear medicine diagnostic instrument _ PET scanner detection system calibration sealed radiation source to implement the localization of research and development technology. Used positron isotope ⑽Ga Release Gama rays in two opposite directions have an energy of 5 1 1 keV. The mother nucleus "Ge has a long half-life, can be manufactured in China, and has a useful life of more than one year. Another object of the present invention is to produce a nuclear medicine Diagnostic instrument-PET scanner detection system calibration sealed radiation source to select the best adsorption medium, has a high adsorption capacity for e, radiation resistance, easy loading and low price. According to the drawings, a nuclear Medical diagnostic instrument „PET scanner” s8Ge sealed shot source calibration device for chastity system calibration .. Brief description is as follows:
第]ι0頁 4 3 6814 _ 案號 89108488_年月—^^_ 五、發明說明(5) 圖一為本發明“Ge密封射源主要構造示意圖,稱為線 射源(Line source或Pin source)A,適合於人體臨床用 PET掃描儀偵檢系統校正運用。將吸附在si〇2介質上68Ge (簡寫為68Ge/Si 〇2) ’裝填於頭端1 1具有陰、陽(内、外)螺 紋a, b而底端12密閉之例如不銹鋼管等金屬管1〇内,頭端 11内部以玻璃纖維13塞住後’用不銹鋼内螺絲丨4旋入頭端 1 1之陰螺紋孔a内鎖住管口’再將不銹鋼外螺絲帽1 5螺合 於頭端11之陽螺紋b鎖緊以密封之。為因應不同廠牌PET掃 描儀規格,6SGe/Si〇2裝填尺寸會有差異,鋼管内徑可為 3-4 mra ’裝填長度可為1 1 2-1 58 mm,有效活度用量則為 74 - 5 5 5MBq(2-15mCi ) °圖二為所製作的ssGe線射源之包裝 一例’射源A係密封於包裝用錯罐實體b内,錯罐厚度需求 端視裝填活度設計,須達到表面輻射劑量率$2mSv/hr, 符合原子能法規射源安全運送管制標準。圖三(1)、(2)及 (3)表示稱為假體射源(Phantom)之包裝例,係將 68Ge/Si02射源物料分別裝填於不同形狀壓克力容器ci〜 C3’再以金屬或塑膠攻牙螺絲20鎖住物料進出口,予以密 封。此種密封射源一般裝填活度較低(<74MBq s8Ge),適合 動物臨床用PET掃描儀偵檢系統之校正。其包裝方式僅需 將假體放在妥適盒子D内予以固定,工作人員維持在5-30 公分距離,即可達到安全運送法規之標準。容器之持質除 壓克力之外亦可採用如PP、PE等適合之塑膠材料。上述各 種射源包裝例僅係提供參考,只要符合原子能法規射源運 送’使用管制標準,任何包裝法均可使用,並不限定於上 述幾種。Page] ι0 4 3 6814 _ Case No. 89108488_year month ^^ _ V. Description of the invention (5) Figure 1 is a schematic diagram of the main structure of the "Ge sealed emitter" of the present invention, which is called a line source (Pin source) ) A, suitable for the correction and application of the PET scanner detection system for human clinical use. 68Ge (abbreviated as 68Ge / Si 〇2) adsorbed on the SiO2 medium 'filled on the head 1 1 has Yin, Yang (inside, outside ) Threads a, b, and the bottom end 12 is sealed in a metal pipe 10 such as a stainless steel pipe, and the inside of the head end 11 is plugged with glass fiber 13. Then, use a stainless steel internal screw 丨 4 to screw into the female thread hole a of the head end 1 1 Internally lock the nozzle 'and then screw the stainless steel outer screw cap 15 to the male thread b of the head end 11 to lock and seal it. In order to meet the specifications of different brands of PET scanners, the 6SGe / Si〇2 packing size will vary The inner diameter of the steel pipe can be 3-4 mra 'The filling length can be 1 1 2-1 58 mm, and the effective activity dosage is 74-5 5 5MBq (2-15mCi) ° Figure 2 shows the produced ssGe line source An example of packaging 'radiation source A is sealed in the wrong container body b for packaging. The thickness of the wrong container depends on the filling activity design and must reach the surface radiation dose rate of $ 2m. Sv / hr, in compliance with atomic energy regulations for the safe transport of radioactive sources. Figure 3 (1), (2), and (3) show examples of packaging called Phantoms, which are 68Ge / Si02 radioactive sources. Filled in acrylic containers of different shapes ci ~ C3 ', then lock the material inlet and outlet with metal or plastic tapping screws 20, and seal it. This sealed shot source generally has a low filling activity (& 74MBq s8Ge), suitable for animals Calibration of the clinical PET scanner detection system. The packaging method only needs to place the prosthesis in a suitable box D and fix it, and the staff can maintain a distance of 5-30 cm to meet the standards of safe transportation regulations. In addition to acrylic, suitable plastic materials such as PP and PE can also be used. The above-mentioned various packaging examples of sources are for reference only. Any packaging method can be used as long as it conforms to the atomic energy regulations for the use of source transportation. Is not limited to the above.
436814 > ^....................................................89108488......................................................................ΐ..........................月...............................a...........................................一.. — ——— 五、發明說明(6) ! 本發明製作的鍺-68密封射源實體構造詳如上述,茲 就本發明鍺-6 8密封射源的詳細製作方法以相關實施例說 明如下: ! esGe密封射源的製作流程如附圖四所示,首先在第一 步驟1 0中將高豊度6;IGa/Ag合金電鍍於制式靶座,其次,在 第二步驟2 0中將此固體靶(S ο I i d t a r g e t)於迴旋加速器所 定質子束能量及電流強度下照射,經放置冷卻約一個月使 靶座材質(A g、C u )被活化之活度降至較低之後,在第三步 驟30中將固體靶放在溶解槽在室溫下溶解於1 0M關(^溶 I ' 液,然後,在第四步驟4 0中將此溶液過濾以去除懸浮微 |粒,即可得“Ge初產品如第五步驟50所示=繼之,將此^Ge 丨初產品進行S】02之吸附(第六步驟60),再將此吸材以 ;Η N 0清洗一次以上以得純化之s a G e,如第七步驟7 0所示, ! |隨後,在第八步騍80中將此純化之產品加以乾燥後即可裝 填密封於容器内(第九步驟9 0 ),最後加以測試進行品質管 制(見第十步驟1 0 0 )後,即可包裝運送(1 1 0 )。另一方面, 在吸附與清洗過程(即步驟6 0及7 0 )中所產生之syGe則可予 回收(步驟ί 2 0 )。 | 在此流程中之主要操作步驟為圖四虚線以下之各步驟 包括:〇)6SGe同位素製備;(2)aiiGe吸附純化;(3)裝填與 !密封;(4 )品質管制。 實施例1 :鍺-6 8同位素製備 本實驗共進行三次,採用高豐度(9 9U47% Enriched) -ssGa/.Ag合金電鍍於制式靶座,於核能研究所TR3_t>/15中型 迴旋加速器質子東能量19MeV及電流強度150-180yA條件436814 > ^ .............................. 89108488 ............................................. ................ ΐ ...................... .... month ............ a ............. ............................. I .. — ——— V. Description of the Invention (6)! The germanium produced by the present invention The detailed structure of the -68 sealed source is as described above, and the detailed manufacturing method of the germanium-6 8 sealed source according to the present invention is explained in related embodiments as follows:! The manufacturing process of the esGe sealed source is shown in Figure 4 and first In the first step 10, a high degree 6; IGa / Ag alloy is plated on the standard target base. Secondly, in the second step 20, the solid target (S ο I idtarget) is set to the energy and current of the proton beam set by the cyclotron. After being irradiated under the intensity, after being left to cool for about one month, the activity of the target base material (A g, Cu) is reduced to a low level. In a third step 30, the solid target is dissolved in a dissolution tank at room temperature. Dissolve the solution at 10M, and then filter the solution to remove suspended particles in the fourth step 40 to obtain the "Ge initial The product is shown in the fifth step 50 = followed by the adsorption of this ^ Ge 丨 initial product S] 02 (sixth step 60), and then the suction material is washed with; Η N 0 more than once to obtain purified sa G e, as shown in the seventh step 70,! | Then, in the eighth step 骒 80, the purified product can be filled and sealed in a container after being dried (ninth step 90), and finally tested. After quality control (see the tenth step 100), it can be packaged and shipped (110). On the other hand, the syGe generated in the adsorption and cleaning process (ie steps 60 and 70) can be recycled. (Step ί 2 0). | The main operating steps in this process are the steps below the dashed line in Figure 4. Each step includes: 0) 6SGe isotope preparation; (2) aiiGe adsorption purification; (3) filling and sealing; (4 ) Quality control. Example 1: Preparation of germanium-6 8 isotope This experiment was carried out three times, using high-abundance (9U47% Enriched) -ssGa / .Ag alloy electroplating on the standard target base, at the Institute of Nuclear Energy TR3_t > / 15 Medium Cyclotron Proton East Energy 19 MeV and Current Intensity 150-180yA
第12頁 4 3 68 1 4. ..............................................................................f E 891084.8.8 ........................................................壬..........................1...............................1...........—— ^je 五、發明說明(7) 下照射,淨照射量為5 0 0 0 - 8 Ο 0 0以A h °固體把於照射後冷 卻2 5天或一個月以上,待一些短半衰期核種不純物儘量降 低其活度,以減少工作人員輻射曝露。固體靶係放在特殊 設計的溶解槽,採用室溫下溶解於1 〇M ΗΝ03溶液,經過濾 去除懸浮微粒(主要為未溶解銀,n)5」usAg),即得68Ge初產 品溶液。流出液取〇 . 1 m 1稀釋1 03 -1 04倍,以 ORTEC-GEM- 3 0 1 9 5 -P 4 0 9 6多頻道脈高分析儀(MCA)計測其 核種活性強度。 實驗結果如表一,顯示適量E n r i c h e d BsG a / A g固體乾 經照射核反應MGaCpjrO^Ge及溶解分離後,所量測之s«Ge 活度校正至停止照射時間(E n d. o f b 〇 in b a r d in e n t,JE 0 B ), 可得平均產率約為 8 . 9 ± 1 . 5 v C i esGe/ y Ah/g suGa。S8Ge 初 產品溶液中除主要核種6 8 G e /6 8 G a外,尚有來自 107,mAg(p, pxn)核反應所產生的銀核種不純物如 :05Ag(41 . 3d)、哪A.g(8, 46d)等,而來自 w7]Ga(p,Xn)、 (p,pxn)核反應所產生的核種不純物如MGe(39h)、 7UG a ( 2 1 in )及72G a (1 4 h )等因半哀期短,在固體草巴冷卻一個月 以上可完全衰減殆盡。實驗所得euGe平均產率的誤差來’ 源’主要也括電鍛層厚度可能影響、迴旋加速器射束能量 與電流強度控制、固體靶溶解與過濾損失、取樣與稀釋操 作及儀器分析等相關因素。Page 12 4 3 68 1 4. ......................... ..................... f E 891084.8.8 ........ ................................................Ren. .........................1........................ ....... 1 ..............—— ^ je V. Description of the invention (7) Under irradiation, the net exposure is 5 0 0 0-8 〇 0 0 at A h ° The solid should be cooled for 25 days or more after irradiation. Wait for some short half-life impurities to reduce their activity as much as possible to reduce the radiation exposure of workers. The solid target was placed in a specially designed dissolution tank. It was dissolved in a 10M ΗΝ03 solution at room temperature and filtered to remove suspended particles (mainly undissolved silver, n) 5 ″ usAg) to obtain a 68Ge initial product solution. The effluent was 0.1 ml diluted 1 03 -1 04 times, and the intensity of nuclear species activity was measured with an ORTEC-GEM- 3 0 1 9 5 -P 4 0 9 6 multi-channel pulse height analyzer (MCA). The experimental results are shown in Table 1. It shows that the appropriate amount of Enriched BsG a / Ag solid solids was irradiated with the nuclear reaction MGaCpjrO ^ Ge and dissolved and separated, and the measured s «Ge activity was corrected to the stop irradiation time (E n d. Ofb 〇in bard in ent, JE 0 B), the average yield is about 8.9 ± 1.5 v C i esGe / y Ah / g suGa. In addition to the main nuclear species 6 8 G e / 6 8 G a in the solution of the original S8Ge product, there are also impurities of silver species from 107, mAg (p, pxn) nuclear reactions such as: 05Ag (41.3d), which Ag (8 , 46d), etc., and from the nuclear species impure produced by the nuclear reaction of w7] Ga (p, Xn), (p, pxn) such as MGe (39h), 7UG a (2 1 in) and 72G a (1 4 h). The half-mourning period is short, and it can be completely attenuated after cooling in solid grass for more than one month. The source of the error in the average yield of euGe obtained from the experiment mainly includes the related factors such as the possible influence of the thickness of the electroforged layer, the control of the cyclotron beam energy and current intensity, the dissolution and filtration loss of the solid target, the sampling and dilution operation, and the instrumental analysis.
第13頁 4 3 6 8 1 ά ................ 案號89108488 年月曰 修正 ..................... ................................................................................................................................................................................,-r,-,,.,, 五 '發明說明(8) 表一、固IE鞋·照射條件與錯-68產率 | ϋ It^s. Hnnched! 产Ga含量 i射東詎量: 3S ,i ^. * I «*1 ' 1 1 斤$丨,Ά 4丄呈 />il ; /r 里 _----~- 0SGe活度。sGe產孟(E〇B) MBq(mCi)丨(pCi/uAirg i9Ga) : 0‘2二4e ^h9MeV; p-i .1 50liA 5000μ.Λΐι ^55(12.3) ; 1〇0 (cooling 30d) 0.!95g I9MsV. p ISO.uA. :6000uAh 3-^0 (9.2) ; Q, (cooimg 6〇d)丨 一 丨 0.391g 19MeV P ^ 180μΑ :SOOOuAh 722 (19.5): (cooling 25d); 備: EOB表示停正照射時間(End of Bombardment) ; 6iGe平均屋孟 4 S.9±1.5 μΟ/μΑη/ε 69Ga 實施例2 :鍺-6 8吸附純化 由於(i8Ge初產品溶液含有銀核種不純物,必須加以純 化去除。為確定tiSGe在Si 02上之吸附動力現象,本實驗首 先配置四個各1 〇ml含“Ge示蹤劑之1 0M ΗΝ03溶液,分別與 丨0.5g SiCM100- 2 0 0 mesh)置於塑膠瓶内,振盪5-30分 i鐘,離心後移除上清液,取樣後隔天分析其wGa活性強 度,顯示e8G e可在與S i 02振盪2 0分鐘内達到吸附平衡狀態 (約9 6 % 。為因應不同廠牌P E T掃描儀系統規格,本實驗 B&Ge密封射源製作所使用的S i 02重量為0 , 6 9 - 0 . 7 7 g。故純 化過·程係取適量“Ge初產品溶液配製於1 Q M HN03it積為3 0 κι 1 ’與上述量吸附介質置於塑膠瓶内振盪3 0分鐘,第一及Page 13 4 3 6 8 1 ά 案 Case No. 89108488 Amendment ... ............................................... ........................................ ........................................ .............,-r,-,,. ,, 5'Invention description (8) Table 1. IE Shoes · Irradiation Conditions and Yield-68 Yield | ϋ It ^ s. Hnnched! Ga content i Radiation amount: 3S, i ^. * I «* 1 '1 1 kg $ 丨 , Ά 4 丄 present / >il; / r _---- ~-0SGe activity. sGe produced Meng (EOB) MBq (mCi) 丨 (pCi / uAirg i9Ga): 0'2 2 4e ^ h9MeV; pi .1 50liA 5000μ. Λΐ ^ 55 (12.3); 1 0 (cooling 30d) 0. ! 95g I9MsV. P ISO.uA.: 6000uAh 3- ^ 0 (9.2); Q, (cooimg 6〇d) 丨 一 丨 0.391g 19MeV P ^ 180μΑ: SOOOuAh 722 (19.5): (cooling 25d); Preparation: EOB stands for End of Bombardment; 6iGe average house Meng 4 S.9 ± 1.5 μO / μΑη / ε 69Ga Example 2: Adsorption and purification of germanium-6 8 Because (i8Ge initial product solution contains silver nuclear impurities, it must be It was purified and removed. In order to determine the adsorption kinetics of tiSGe on Si 02, this experiment was first configured with four 10ml 10M ΗN03 solutions containing "Ge tracer, respectively with 0.5g SiCM100- 2 0 0 mesh) Put it in a plastic bottle, shake for 5-30 minutes, remove the supernatant after centrifugation, analyze the wGa activity intensity after sampling, and show that e8G e can reach the adsorption equilibrium state within 20 minutes after shaking with Si 02 (Approximately 96%. In order to meet the specifications of different brands of PET scanner systems, the S i 02 used in the B & amp sealed-source production of this experiment weighs 0, 6-0.77 g. Therefore, it has been purified. The process is to take an appropriate amount of "Ge's initial product solution and prepare it in 1 Q M HN03it product of 30 0 κι 1 'and the above amount of adsorption medium in a plastic bottle and shake for 30 minutes.
MM 89108488 ±^ ——a______________—鱼兵——_—________________— —_ 五、發明說明(9) 第二次清洗條件為1 0M ΗΝ03,體積1 5-30 ml,振盪時間皆 為3 0分鐘。吸附與清洗過程中,SSG e在介質上的吸附率及 損失率可以數學式(1-A/AJx 100%計算,AG代表料液中ssGe 總活度,A代表吸附與清洗後上清液6ttGe總活度。由於B8Ge 僅釋出低能量X-射線,無法以MCA計測,因此取出的試 樣,必須放置隔天(24小時以上),待生成之S8Ga達到與6aGe 活性平衡後,再行計測。 實驗結果綜合如表二,顯示ssGe在S i 02介質上的平均 吸附率約為(8 1. 6 ± 1. 3 ) %,此與上述結果(9 6 % )相較稍為 偏低,可能由於料液中含有適量Ag及G a,受到微量吸附競 爭的影響導致“Ge吸附率略降。第一次清洗68Ge損失率為 (4 . 9 ± 1 . 3 )_%,第二次清洗 SSG e 損失率則為(3 . 4 ± 0 . 3 ) %, 總計esG e在吸附純化過程的平均回收率可得(7 3 . 2 土 2 . 3 ) %。附圖五為6 8 G e初產品溶液經由純化前後的加馬能言普 分析,顯示最終產品S8G e / S i 02核種純度大於9 9 . 9 9 %,其他 的銀核種不純物在此純化條件下,幾可完全去除。MM 89108488 ± ^ ——a ______________— Fish Soldier ——_——________________— —_ 5. Description of the invention (9) The second cleaning condition is 10M ΗΝ03, volume 1 5-30 ml, shaking time is 30 minutes. In the process of adsorption and cleaning, the adsorption rate and loss rate of SSG e on the medium can be calculated by mathematical formula (1-A / AJx 100%, where AG represents the total activity of ssGe in the feed solution, and A represents the supernatant 6ttGe after adsorption and cleaning. Total activity. Since B8Ge only releases low-energy X-rays and cannot be measured by MCA, the sample taken out must be left for another day (more than 24 hours). After the generated S8Ga reaches the equilibrium with 6aGe activity, the measurement is performed. The experimental results are summarized in Table 2. It shows that the average adsorption rate of ssGe on the Si 02 medium is (8 1. 6 ± 1.3)%, which is slightly lower than the above result (96%). Due to the proper amount of Ag and Ga in the feed liquid, the influence of trace adsorption competition caused the "Ge adsorption rate to drop slightly. The loss rate of 68Ge in the first cleaning was (4.9 ± 1.3) _%, and the second cleaning of SSG The loss ratio of e is (3.4 ± 0.3)%. The total average recovery of esG e in the adsorption and purification process can be obtained (7 3.2 .2 2.3)%. Figure 5 shows the beginning of 6 8 G e The product solution was analyzed by Gamma Energy analysis before and after purification, and the purity of the final product S8G e / S i 02 nuclear species was greater than 99.9%, other Silver core impurity species in this purification conditions, are almost completely removed.
第15頁 436814 > ........................................................................麵.......89108488...................................................................-f- g g 五、發明說明(10) 表二、錯-68在二氧化琴致附純化過程之分甸狀況 實驗倏伴:料液:10MHNO3 ; 30ml 设衔劑:Si02(100〜200mesh):實驗 μ3 為 0 69σ ; 實驗4為0.77g 一 清洗條俜:10MHNO::實驗丨_3為3〇m丨:實驗* 〜 - 為15ml 振盪時'間:皆為30mmPage 15 436814 > ............................ ............ noodles .. 89108488 ............. ........................................ ....- f-gg V. Description of the invention (10) Table II. Experiments of the different conditions of Cu-68 in the purification process of dioxin-induced attachment 倏 Companion: Material liquid: 10MHNO3; 30ml Designation agent: Si02 (100 ~ 200mesh): Experiment μ3 is 0 69σ; Experiment 4 is 0.77g. A cleaning bar: 10MHNO :: Experiment 丨 _3 is 3〇m 丨: Experiment * ~-is 15ml when shaking. Time: 30mm
丨項次 1 i料液申MGe丨6SGe吸枏! 34Ge損失至(%) ί吸幣在介y h丨 ;6aGe 6iGe總习抆 ^(%) 活度(MB q)丨 季(%) |第 一次清洗i第二次清洗 ! 1 330 ! 80.9 I —1 —1 J.J 3.1 240 74.5 i 0 Ί 一 130 ! 83.0 | 3.9 98.7 75.9 i -V J 254 | 79.7 : —*1 / .*r J. / 17-1 68.5 1 4 722 ; S2.6 | 5.1 3.7 533 T3.S 平均回吹早(73.2二2_3)% 實施例3 :裝填與密封 密封射源的製作基本考量因素為射源能均勾固著在介 質上’且密閉性良好。有關68Ge吸附在Si02介質上的化學 反應機制雖然不甚清楚’但由於68Ge在酸性水溶液中呈四 價正離子,而S i 〇2為一種透明非晶形分子呈〇_ s i -〇層形排 列構造’研判此種吸附行為可能為帶陽電荷Ge4+與Si 02晶 體格子中帶陰電性氧原子間的靜電敬引力。實驗顯示將 SSG e / S i l置於純水f振盪3 0分鐘,e被'尽洗出來之量極 小(S 5%)。在裝填操作上’首先係將純化後的68Ge/Si02物 料放在燒杯’置於乾燥器内(Dessicator)陰乾4_-5天,取丨 Item times 1 i material liquid application MGe 丨 6SGe suck! 34Ge loss to (%) ί sucking coins in the introduction yh 丨; 6aGe 6iGe total learning 抆 (%) activity (MB q) 丨 quarter (%) | the first cleaning i the second cleaning! 1 330! 80.9 I —1 —1 JJ 3.1 240 74.5 i 0 Ί130! 83.0 | 3.9 98.7 75.9 i -VJ 254 | 79.7:-* 1 /. * R J. / 17-1 68.5 1 4 722; S2.6 | 5.1 3.7 533 T3.S average blowback early (73.2-2_3)% Example 3: The basic considerations for the production of filling and sealing sealed radio sources are that the radio sources can be anchored on the medium 'and have good airtightness. Although the chemical reaction mechanism of 68Ge adsorption on the SiO2 medium is not very clear, but because 68Ge is a tetravalent positive ion in an acidic aqueous solution, S i 〇2 is a transparent amorphous molecule with a layered structure of 0 si-0. 'Study this adsorption behavior may be the electrostatic attraction between the positively charged Ge4 + and the negatively charged oxygen atoms in the Si 02 crystal lattice. The experiment showed that when SSG e / Si was placed in pure water f for 30 minutes, the amount of e that was washed out was extremely small (S 5%). In the filling operation, firstly, put the purified 68Ge / Si02 material in a beaker ’and put it in a dessicator for 4-5 days.
第16頁 4 3 6 8 1 /1 案號 89108488 年月日 修正Page 16 4 3 6 8 1/1 Case No. 89108488 Revised
4 3^6 8 1 4 .................... — _ΜΜ—8915.8488 ...................羌——4 且_ .................... 五、發明說明(].2) _ 鉛蓋,周邊裝設活動提環,以方便密封射源取出與搬運。 至於esG e假體射源製作(詳見圖三)之裝填與密封,亦同上 述操作方式,惟此密封射源裝填活度較低,使用期限稱’ 短。 實施例4 :品質管制 為校正PET掃描儀活度偵測系統,esGe密封射源的製作 須確保其穩定性及安全性,相關的品質管制極為重要。本 發明曾製作四支G8Ge線射源(裝填活度為1 2 2、1 4 1、1 4 8及 518 MBq)及三個“(^假體射源(裝填活度為g. 1、ι2. 5及 2 5 . 7 MBq ;壓克力儀具由核研所物理組提供),並依據標4 3 ^ 6 8 1 4 ............ _ΜΜ—8915.8488 .........羌 ——4 and _ ................. 5. Description of the invention (] .2) _ Lead cover, with movable lifting ring on the periphery to facilitate sealing Source removal and handling. As for the filling and sealing of the esG e prosthesis source production (see Figure 3 for details), the operation method is the same as above. However, the sealing source has a low filling activity and the service life is short. Embodiment 4: Quality Control In order to calibrate the PET scanner activity detection system, the production of esGe sealed emission source must ensure its stability and safety. The related quality control is extremely important. The present invention has produced four G8Ge line radiation sources (filling activity of 1 2 2, 1 4 1, 1, 4 8 and 518 MBq) and three "(^ prosthetic radiation sources (filling activity of g. 1, ι2 5 and 2 5 7 MBq; acrylic instruments provided by the Physics Group of the Nuclear Research Institute), and according to the standard
準檢驗方法ANSI Standard N-542, 1977, Appendix A L e a k T e s ΐ M e t h o d進行上述密封射源檢驗測試,相關操;作 與實驗結果說明如下: (1 )表面擦拭實驗(W i p e 〇 r s m e a r t e s t ):即以沾濕遽紙 擦拭裝填射源之容器表面’利用E b e r I i n e B C - 4計數器 量測濾紙活度。實驗結果顯示濾紙活度皆為背景值 C2.0Bq)’遠小於法規值i85Bq(5nCi),亦即所製作密 封射源之容器表面皆無污染。 (2) 浸泡實驗(丨丽“以⑽test):將裝填射源之實體放在 沸水中浸泡3 〇分鐘或於冷水中浸泡4小時,取出浸泡液 試樣於多頻道脈高分.析儀(MCA)量測試樣活度,顯示亦 皆為背景值,小於法規值1 8 5 B q ( 5 n C i )。 (3) 真空氣泡實驗(Vacuum bubble test).」在特殊設計的 容量槽内放置適量蒸餾水,先以真空泵抽出-溶在水中 的空氣,回復至室壓後,將裝填射源之容器浸在水面The quasi-inspection method ANSI Standard N-542, 1977, Appendix AL eak T es ΐ M ethod performs the above-mentioned sealed radio source inspection test and related operations; the operation and experimental results are described as follows: (1) Surface wipe test (W ipe 〇rsmeartest): That is, the surface of the container filled with the shot source is wiped with a damp paper to measure the filter paper activity with an E ber I ine BC-4 counter. The experimental results show that the filter paper activity is the background value C2.0Bq) ', which is much smaller than the regulatory value i85Bq (5nCi), that is, the surface of the container for the sealed radioactive source is free of contamination. (2) Immersion test (丨 test): immerse the entity filled with the injection source for 30 minutes in boiling water or 4 hours in cold water, and take out a sample of the soaking solution in a multi-channel pulse high score analyzer. MCA) measure the activity of the test sample, and the display is also the background value, which is less than the legal value of 1 8 5 B q (5 n C i). (3) Vacuum bubble test (Vacuum bubble test). Place a proper amount of distilled water in it, first extract the air dissolved in water with a vacuum pump, return to the room pressure, and immerse the container filled with the injection source on the water surface.
第Μ頁 4. 3 6 8 1 4 ............................................................fjE 89108488 J a ................................................................................... 五、發明說明(13) 下至少5公分,再抽負壓至約2 0 0 Torrs,靜置2分鐘, 觀察容器物料進出口端處,顯示皆無氣泡產生現象, 表示密封射源實體的密閉性極為良好。 (4)活度分佈均勻性測試:利用設計製作的一套準直儀, 即以N a ί ( Π )晶體偵檢器置於厚度5 cni鉛容器内,中間 孔徑5 in m,深度5 . 5 c πι,配合電腦程式控制自動垂直掃 描固定在支架上射源實體,偵檢器距離射源表面約 6 - 7 c m,準直儀位移距離為0· 5 - 1 c m,計測時間1 0 s e c。 本試驗以裝填活度5 1 8 MBq ( 1 4mC i ) esGe線射源及 2 5 . 7 M Bq ( 0 . 6 9 5 mC i ) ti8Ge假體射源為例,測試結果如附 圖六,顯示前者相對活度分佈平均誤差為± 1 . 5 %,後 者則為± 5. 8 %,皆較商用產品以相關方法製作密封射 源的容許誤差範圍(S ± 1 5 %)為佳。 (5 )介質抗輻射性評估:從D, A. Weber等人在1 9 8 9年於The Society of Nuclear Medicine i! iMIRD : Radionucl ide Data and Decay Schemes”戶斤報導的資料顯示,S8Ge射 源之單位吸收劑量約為1, 9 2 x 1 0G y · g / " C i,h。針 對本發明線射源所使用的Si 02重量為0. 6 9 - 0. 7 7 g評 估,以518MBq S8Ge均勻分佈在SiO;;介質為例,估計此 密封射源使甩一年,其總吸收劑量約為3 X 1 04 G y。由 於S i 02為玻璃主要成分,具有高的抗輻射性質,在鈷 -6 0照射總劑量達1 05Gy時,仍不會導致變質,穩定性 極高。 、 -此外,有關s8Ge密封射源的環境輻射背景值,可利用 手提式輻射偵檢器量測,針對同批次製作的5 1 8及Page M 4. 3 6 8 1 4 ... fjE 89108488 J a ............... ........................................ ....... V. Description of the invention (13) At least 5 cm, and then pump negative pressure to about 200 Torrs, and let it stand for 2 minutes. Observe that there is no air bubble at the inlet and outlet of the container. The tightness of the sealed source entity is extremely good. (4) Activity distribution uniformity test: a set of collimator designed and manufactured, that is, a Na a (Π) crystal detector is placed in a lead container with a thickness of 5 cni, the middle aperture is 5 in m, and the depth is 5. 5 c πι, coordinated with computer program to control automatic vertical scanning of the source entity fixed on the bracket, the detector is about 6-7 cm away from the source surface, the collimator displacement distance is 0.5 · 1-1 cm, the measurement time is 10 sec . In this test, the loading activity is 5 1 8 MBq (14 mC i) esGe line source and 2 5 7 M Bq (0.6 9 5 mC i) ti8Ge prosthesis source. The test results are shown in Figure 6 below. It shows that the average error of the relative activity distribution of the former is ± 1.5%, and the latter is ± 5. 8%, which is better than the allowable error range (S ± 15%) of the sealed radiation source made by commercial products by related methods. (5) Evaluation of dielectric radiation resistance: According to data reported by D, A. Weber et al. In The Society of Nuclear Medicine i! IMIRD: Radionucl ide Data and Decay Schemes in 1989, the source of S8Ge is The unit absorbed dose is about 1, 9 2 x 1 0G y · g / " C i, h. The weight of Si 02 used for the linear radiation source of the present invention is 0.6 9-0.7 7 g. 518MBq S8Ge is uniformly distributed in SiO; medium as an example, it is estimated that the sealed radiation source will be shaken for one year, and its total absorbed dose is about 3 X 1 04 G y. Since Si 02 is the main component of glass, it has high radiation resistance When the total dose of cobalt-6 0 reaches 105 Gy, it will still not cause deterioration and high stability. In addition, the background radiation value of the s8Ge sealed radiation source can be measured with a portable radiation detector For 5 1 8 and
第19頁 436814 \ f Ε 89108488 ^..........................β...............................§...........................................H...............................—___________________ 五、發明說明(14) 1 48MBq B8Ge線射源與三個“Ge假體射源(9. 1、1 2. 5、 2 5, 7MBq)進行量測,其結果綜合如附表三。顯示兩支線射 源不鎮鋼管表面之輻射劑量率分別為3 5及1 0 . 5 m S v / h,在 距離3 G公分處仍有9 . 1及0 . 2 5 mS v / h,將此射源放在屏壁 厚度為3. 5公分鉛罐内,則頂部及週邊輻射劑量率分別降 為0.4-〇.0 2 4 1^"/11及0.23〜0.0 64 111$7/[1,顯示此種線射 源視其裝填活度大小,必須放在適當屏蔽厚度之鉛罐内, 方可符合原子能法規安全運送管制之標準(S 2mSv/h)。至 於68Ge假體因裝填活度低(<74MBq),以裝填量25. 7MBq為 例,雖然其表面最大輻射劑量率為2. 1 mSv/h,然工作人 員在距離5 - 3 0公分處,其輻射劑量率可降至0 . 4 7 - 0. 0 3 mSv/h,因此可視假體形狀及裝填活度,妥適放在特製盒 子内(内裝保麗龍防震),貼上標籤,即可達到安全傳送之 目的〇Page 19 436814 \ f Ε 89108488 ^ ............... β .............. ....... § ................................ ........... H .................................._______ 5. Description of the invention ( 14) 1 48MBq B8Ge line source and three "Ge prosthetic sources (9.1, 1 2.5, 2 5, 7MBq) were measured, and the results are as shown in Table 3. It shows that the two line sources are not The radiation dose rates on the surface of the steel pipe are 35 and 10. 5 m S v / h, and there are still 9.1 and 0.2 5 mS v / h at a distance of 3 G centimeters. In a lead can with a wall thickness of 3.5 cm, the radiation dose rates at the top and the periphery are reduced to 0.4-0.0. 2 4 1 ^ " / 11 and 0.23 ~ 0.0 64 111 $ 7 / [1, showing this line of radiation The source depends on its loading activity and must be placed in a lead can of appropriate shielding thickness in order to meet the standards for safe transportation control of atomic energy regulations (S 2mSv / h). As for the 68Ge prosthesis, its loading activity is low (& 74MBq) Taking the loading amount of 25.7MBq as an example, although the maximum radiation dose rate on the surface is 2.1 mSv / h, the worker's radiation dose is at a distance of 5-30 cm. Can be reduced to 0.4 7-0. 0 3 mSv / h, so depending on the shape of the prosthesis and the filling activity, it can be placed in a special box (with built-in Polytron anti-vibration), and the label can be used to achieve safety. Purpose of transmission
第20頁 436814 f E 89108488..........................................................年.........................月..............................§..........................................堡 五、發明說明(15) 表三、鍺-68密封射源實體之輻射劑量率 A. 6SGe .線射源 不銹鋼管表面(mSv/h) 势罐表面(mS v/li) | 5互離(cm) 1 裝填活度」 MBq (mCi) 位置 裝填活度, MBq (mCi) 518(H) 148⑷ 518 (14) 148(4) j 〇 35 10.5 頂部 0.4 0.02-1 1 ^ ! 3 13.5 3.0 ' * 立 ^^4 0.23 0.064 j 30 9.1 0.25 j jPage 20 436814 f E 89108488 ... ...............years........ ......... § .................... ............... V. Description of the invention (15) Table III. Radiation dose rate of the germanium-68 sealed source entity A. 6SGe. Surface of the source stainless steel tube (mSv / h) Pot surface (mS v / li) | 5 Mutation (cm) 1 Loading activity ”MBq (mCi) Position loading activity, MBq (mCi) 518 (H) 148⑷ 518 (14) 148 (4) j 〇35 10.5 Top 0.4 0.02-1 1 ^! 3 13.5 3.0 '* Li ^^ 4 0.23 0.064 j 30 9.1 0.25 jj
B. 6SGe a體射渌 侫體丨 1 ί : 1 裝填活度 i ; _射 劑量运(mSv/h) MBq (mCi) j 1 0cm ! 5cm 丨 30cm 1 1 25.7 (0.695) ! 0.084 2.10 :0.47 0.03 ;2 ί 9.10 (0.246) ί 2‘30 ; L15 ;0.26 ! 0.016 : ! 3 : 12.5 (0.337) 丨 3.975 ; 1.34 ! 0.30 : 0.01S 以上說明僅為了描述本發明之實施例,並非本發明的 任何限制,本發明研究人員可在不背離本發明精神之情況 下,對本發明作出各種修改與替代。本發明範圍由附加之 申請專利範圍要求來限定。 ' j „由以上說明可知本發明乃採用具有高吸附蓉量及抗輻B. 6SGe a body shot carcass 丨 1 ί: 1 loading activity i; _ shot dose transport (mSv / h) MBq (mCi) j 1 0cm! 5cm 丨 30cm 1 1 25.7 (0.695)! 0.084 2.10: 0.47 0.03; 2 ί 9.10 (0.246) ί 2'30; L15; 0.26! 0.016:! 3: 12.5 (0.337) 丨 3.975; 1.34! 0.30: 0.01S The above description is only for describing the embodiment of the present invention, and it is not the present invention. Any limitation, the researcher of the present invention can make various modifications and substitutions to the present invention without departing from the spirit of the present invention. The scope of the invention is defined by the additional patent application scope requirements. 'j „As can be seen from the above description, the present invention adopts a high adsorption capacity and anti-radiation
J |射性質之無機吸附劑二氧化矽為吸附介質製作鍺-6 8密封J | Inorganic adsorbent made of silicon dioxide as the adsorption medium to produce germanium-6 8 seal
第2i頁 436814 j 89108488 ; ^ J..............................a .........................ϋ———................................................................... 五、發明說明(16) 射源,可提供正子放射斷層掃描儀活度偵檢系統校正運 用,提高儀器在臨床上擷取數據的準確性及增進臨床應用 判斷效果,對我國核子醫學診斷將有明顯的貢獻。Page 2i 436814 j 89108488; ^ J .............. a ... ............... ϋ ————............... ................................................................. (16) The source can provide positron emission The correction and application of the tomography activity detection system will improve the accuracy of the data acquired by the instrument in the clinic and the effect of clinical application judgment, and it will make a significant contribution to nuclear medicine diagnosis in China.
第22頁 436814 案號 89108488 a 修正 圖式簡單說明 圖一為本發明鍺〜6 8線射源構造一實施例之剖視圖。 圖二為本發明鍺-6 8線射源利用鉛罐實體包裝之一例 之示意圖。 圖三(1 )〜(3 )為本發明鍺-6 8假體射源之三種包裝例 示意圖。 圖四為本發明鍺-6 8密封射源製作流程圖。 圖五為本發明鍺-6 8吸附純化前後加馬能譜分析圖。 圖六為本發明鍺-6 8密封射源活度分佈均勻性鑑定曲 線圖°Page 22 436814 Case No. 89108488 a Modification Brief description of the drawing Figure 1 is a cross-sectional view of an embodiment of a germanium ~ 68 line source structure according to the present invention. Figure 2 is a schematic diagram of an example of the physical packaging of a lead can using a germanium-6 8-ray source. Figures 3 (1) ~ (3) are schematic diagrams of three packaging examples of the germanium-6 8 prosthesis source of the present invention. FIG. 4 is a flowchart of manufacturing a germanium-6 8 sealed shot source according to the present invention. Fig. 5 is a graph showing the analysis of the energy spectrum of Sigma before and after the adsorption and purification of germanium-6 8 according to the present invention. Figure 6 is a graph showing the uniformity of the activity distribution of the sealed germanium-6 8 source of the present invention.
符號說明: A 10 11 12 13 14 15 B Cl,C2,C3 D 錯-6 8線射源 不銹鋼管 頭端 底端 玻璃纖維 内螺絲 外螺絲帽 鉛罐 假體射源(壓克力容器) 盒子Symbol description: A 10 11 12 13 14 15 B Cl, C2, C3 D W-6 8-line radio source Stainless steel tube Head end Bottom glass fiber Inner screw Outer screw cap Lead can Prosthesis source (acrylic container) Box
第23頁Page 23
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI500046B (en) * | 2009-08-25 | 2015-09-11 | Ge Hitachi Nucl Energy America | Irradiation targets for isotope delivery systems |
US9431138B2 (en) | 2009-07-10 | 2016-08-30 | Ge-Hitachi Nuclear Energy Americas, Llc | Method of generating specified activities within a target holding device |
CN107293345A (en) * | 2017-06-03 | 2017-10-24 | 天津赛德医药研究院有限公司 | The preparation method of the radioactive source source core of germanium 68 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9431138B2 (en) | 2009-07-10 | 2016-08-30 | Ge-Hitachi Nuclear Energy Americas, Llc | Method of generating specified activities within a target holding device |
TWI500046B (en) * | 2009-08-25 | 2015-09-11 | Ge Hitachi Nucl Energy America | Irradiation targets for isotope delivery systems |
US9773577B2 (en) | 2009-08-25 | 2017-09-26 | Ge-Hitachi Nuclear Energy Americas Llc | Irradiation targets for isotope delivery systems |
CN107293345A (en) * | 2017-06-03 | 2017-10-24 | 天津赛德医药研究院有限公司 | The preparation method of the radioactive source source core of germanium 68 |
CN107293345B (en) * | 2017-06-03 | 2019-06-04 | 天津赛德医药研究院有限公司 | The preparation method of -68 radioactive source source core of germanium |
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